WO2023172950A3 - Compositionally graded buffer for thermo-photovoltaic systems - Google Patents

Compositionally graded buffer for thermo-photovoltaic systems Download PDF

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Publication number
WO2023172950A3
WO2023172950A3 PCT/US2023/063926 US2023063926W WO2023172950A3 WO 2023172950 A3 WO2023172950 A3 WO 2023172950A3 US 2023063926 W US2023063926 W US 2023063926W WO 2023172950 A3 WO2023172950 A3 WO 2023172950A3
Authority
WO
WIPO (PCT)
Prior art keywords
lattice constant
layered structure
compositionally graded
graded buffer
substrate
Prior art date
Application number
PCT/US2023/063926
Other languages
French (fr)
Other versions
WO2023172950A2 (en
Inventor
John REIFENBERG
Jon William STEWART
Adam William WELCH
Original Assignee
Sierra Nevada Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sierra Nevada Corporation filed Critical Sierra Nevada Corporation
Publication of WO2023172950A2 publication Critical patent/WO2023172950A2/en
Publication of WO2023172950A3 publication Critical patent/WO2023172950A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/30—Thermophotovoltaic systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

Methods, devices, and systems are described for a compositionally graded buffer structure for a TPV system. The compositionally graded buffer structure includes a substrate having a substrate lattice constant, and a first layered structure configured to be disposed above the substrate, the first layered structure having a first layer lattice constant. The compositionally graded buffer structure includes at least one second layered structure disposed above the first layered structure, the second layered structure having a second layer lattice constant. The compositionally graded buffer structure includes a photovoltaic cell configured to be disposed above the first layered structure and the second layered structure. The photovoltaic cell has a photovoltaic cell lattice constant that is different than the substrate lattice constant. The first layer lattice constant matches the substrate lattice constant more than the second layered structure. The second layer lattice constant matches the photovoltaic cell lattice constant more than the first layered structure.
PCT/US2023/063926 2022-03-09 2023-03-08 Compositionally graded buffer for thermo-photovoltaic systems WO2023172950A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263318293P 2022-03-09 2022-03-09
US63/318,293 2022-03-09

Publications (2)

Publication Number Publication Date
WO2023172950A2 WO2023172950A2 (en) 2023-09-14
WO2023172950A3 true WO2023172950A3 (en) 2023-10-26

Family

ID=87935942

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2023/063926 WO2023172950A2 (en) 2022-03-09 2023-03-08 Compositionally graded buffer for thermo-photovoltaic systems

Country Status (1)

Country Link
WO (1) WO2023172950A2 (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5407491A (en) * 1993-04-08 1995-04-18 University Of Houston Tandem solar cell with improved tunnel junction
US20040262631A1 (en) * 1997-06-24 2004-12-30 Massachusetts Institute Of Technology Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
US20100109047A1 (en) * 2007-07-26 2010-05-06 Translucent, Inc. Multijunction rare earth solar cell
US20100229932A1 (en) * 2006-06-02 2010-09-16 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells
US20130048061A1 (en) * 2011-08-24 2013-02-28 International Business Machines Corporation Monolithic multi-junction photovoltaic cell and method
US20170077340A1 (en) * 2014-07-11 2017-03-16 Rich Company, Ltd. Compound-semiconductor photovoltaic cell and manufacturing method of compound-semiconductor photovoltaic cell
US20170110613A1 (en) * 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
US20200135962A1 (en) * 2017-04-21 2020-04-30 Massachusetts Institute Of Technology Systems and methods for fabricating photovoltaic devices via remote epitaxy
US20200144433A1 (en) * 2017-06-23 2020-05-07 University Of Ottawa Photovoltaic device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5407491A (en) * 1993-04-08 1995-04-18 University Of Houston Tandem solar cell with improved tunnel junction
US20040262631A1 (en) * 1997-06-24 2004-12-30 Massachusetts Institute Of Technology Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
US20100229932A1 (en) * 2006-06-02 2010-09-16 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells
US20100109047A1 (en) * 2007-07-26 2010-05-06 Translucent, Inc. Multijunction rare earth solar cell
US20130048061A1 (en) * 2011-08-24 2013-02-28 International Business Machines Corporation Monolithic multi-junction photovoltaic cell and method
US20170077340A1 (en) * 2014-07-11 2017-03-16 Rich Company, Ltd. Compound-semiconductor photovoltaic cell and manufacturing method of compound-semiconductor photovoltaic cell
US20170110613A1 (en) * 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
US20200135962A1 (en) * 2017-04-21 2020-04-30 Massachusetts Institute Of Technology Systems and methods for fabricating photovoltaic devices via remote epitaxy
US20200144433A1 (en) * 2017-06-23 2020-05-07 University Of Ottawa Photovoltaic device

Also Published As

Publication number Publication date
WO2023172950A2 (en) 2023-09-14

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