WO2023165081A1 - Broadband near-infrared fluorescent powder based on spinel structure, preparation method therefor and application thereof - Google Patents

Broadband near-infrared fluorescent powder based on spinel structure, preparation method therefor and application thereof Download PDF

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WO2023165081A1
WO2023165081A1 PCT/CN2022/109943 CN2022109943W WO2023165081A1 WO 2023165081 A1 WO2023165081 A1 WO 2023165081A1 CN 2022109943 W CN2022109943 W CN 2022109943W WO 2023165081 A1 WO2023165081 A1 WO 2023165081A1
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infrared
broadband near
preparation
broadband
fluorescent powder
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郑国君
肖文戈
邱建荣
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浙江大学
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    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • C09K11/641Chalcogenides
    • C09K11/643Chalcogenides with alkaline earth metals
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    • C09K11/62Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/621Chalcogenides
    • C09K11/625Chalcogenides with alkaline earth metals
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/66Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/666Aluminates; Silicates
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7701Chalogenides
    • C09K11/7703Chalogenides with alkaline earth metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

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  • the invention belongs to a fluorescent powder and its preparation method and application in the technical field of luminescent materials, and specifically relates to a broadband near-infrared fluorescent powder based on a spinel structure and its preparation method and application.
  • NIR near-infrared
  • O-H, N-H, C-H hydrogen-containing groups
  • Patent document CN109913214A discloses a NIR phosphor composed of R x Al 1-y F x+3 :yCr, whose emission range is 700-900nm; non-patent document Adv.Optical Mater.2020,8,2000296 publishes The NIR fluorescent powder composed of Gd 3 Sc 2-x Al x Ga 3 O 12 : Cr 3+ can emit 650-900nm, its internal quantum efficiency is close to 100%, and the emission intensity still maintains 87% of the initial value at 150°C above. Although these phosphors have excellent luminescent properties, their emission wavelength coverage is narrow and cannot meet the needs of NIR spectroscopy alone. For example, the characteristic absorption of water that is common in life is around 970nm.
  • the prior art lacks a low-cost, high-efficiency, and high-thermal-stability ultra-broadband NIR phosphor to construct a high-performance miniature broadband NIR light source.
  • the object of the present invention is to provide a kind of broadband near-infrared phosphor based on spinel structure; another object of the present invention is to provide the preparation method and application of the above-mentioned broadband near-infrared phosphor .
  • the invention prepares ultra-broadband NIR fluorescent powder with low cost, high efficiency and high thermal stability, and then constructs a high-performance miniature broadband NIR light source.
  • a broadband near-infrared phosphor 1.
  • the broadband near-infrared fluorescent powder is an inorganic compound, and its chemical formula is A x (B 1-y Cy ) 2 O 4 :zCr 3+ , wherein A is Mg, Zn, Ca, Sr, Ba, Be element One or more of, B is one or more of Ga, Al, Sc, In, Y, La, Lu elements, C is Si, Sn, In, Ta, As, Li, Na, K elements One or more of , and the parameters x, y, z meet the following conditions:
  • the main crystal phase of the broadband near-infrared phosphor has a spinel structure.
  • the fluorescent powder is effectively excited by visible light with a wavelength range of 400-700nm, and emits near-infrared light with a wavelength range of 650-1300nm.
  • the compound containing A, B, C and Cr is weighed respectively as a raw material, and A is one or more of Mg, Zn, Ca, Sr, Ba, Be elements , B is one or more of Al, Ga, Sc, In, Y, La, Lu elements, C is one or more of Si, Ge, Sn, In, Ta, As, Li, Na, K elements Various, and then fully mix the raw materials evenly to obtain a uniform mixture;
  • the compound is one or more of oxides, nitrates, halides, and carbonates containing corresponding elements.
  • the heat treatment of calcination is carried out in the step (2), and the heat treatment time is 2 to 20 hours.
  • the flux is specifically: one or more of H 3 BO 3 , MgF 2 , CaF 2 , Li 2 CO 3 , PbO, BaF 2 , PbF 2 , KF, LiF, and the content is the overall mass of the homogeneous mixture 1-30% of.
  • the atmosphere is at least one of air, oxygen, hydrogen, nitrogen and hydrogen mixed gas, argon and hydrogen mixed gas or carbon monoxide gas.
  • a fluorescent conversion LED device which is a broadband near-infrared phosphor made by the above preparation method.
  • the LED device includes a light source and a fluorescent conversion material, and the broadband near-infrared phosphor is used to prepare the fluorescent conversion material.
  • the light source includes an LED chip, a laser diode or an organic EL light emitting device whose emission wavelength is between 400nm and 700nm.
  • the invention can emit light in the range of 650-1300nm under the excitation of 400-700nm visible light.
  • the light source is a semiconductor chip with an emission peak of 400-700 nm, and preferably a near-ultraviolet or blue LED chip with an emission wavelength of 400-500 nm, or a red light chip with an emission wavelength of 600-700 nm.
  • the fluorescent powder is mixed with glue and then packaged on a blue LED chip emitting 400-500 nm to finally prepare a fluorescent conversion type broadband near-infrared light source.
  • the phosphor powder prepared by the present invention has the advantages of wide emission wavelength coverage, high luminous intensity, low thermal quenching, and good physical and chemical stability, so it can be used as a near-infrared light conversion material for night vision, food analysis, and material detection. , medical imaging, simulated solar spectrum and other fields.
  • the single doping of Cr 3+ in the phosphor powder of the present invention can obtain the broadband near-infrared light of 650-1300nm and the half-maximum width greater than 300nm under the excitation of blue light and red light with a wavelength range of 400-700nm.
  • Phosphor powder has high luminous efficiency and good thermal stability.
  • the preparation method of the phosphor powder of the present invention is simple and easy to operate, and can be constructed into a miniature broadband near-infrared light source by combining with a visible light LED chip or a laser diode.
  • Fig. 1 is the XRD collection of illustrative plates of the sample prepared in embodiment 1;
  • Fig. 2 is the excitation spectrum of the sample prepared in embodiment 1;
  • Fig. 3 is the emission spectrum of the sample prepared by embodiment 1, 2, 4, 7 and comparative example 1;
  • Fig. 4 is the spectrum of the device packaged with the samples prepared in Examples 1, 2, and 4 combined with a 450nm blue LED.
  • the roasted product is the broadband near-infrared phosphor of the present invention after being fully ground, washed and sieved.
  • the main crystal phase of the sample prepared in Example 1 belongs to cubic spinel.
  • the sample prepared in Example 1 emits broadband near-infrared light under the excitation of visible light in the range of 400-700 nm.
  • the sample prepared in Example 1 can be combined with a 450nm blue LED to package a fluorescence conversion broadband near-infrared LED device, so it can be applied to near-infrared spectroscopy, solar simulators and other related fields.
  • the internal quantum efficiency of the fluorescent powder in this embodiment is 85%, and its integrated emission intensity still maintains 72% at 150° C. compared with room temperature.
  • the internal quantum efficiency of the fluorescent powder in this embodiment is 80%, and its integrated emission intensity still maintains 75% at 150° C. compared with room temperature.
  • Example 1 Except that the molecular formula was changed to Zn 0.7 [(Ga 0.9 Al 0.1 ) 0.7 Si 0.3 ] 2 O 4 :0.1Cr 3+ and the sintering temperature was changed to 1250°C and held for 7 hours, other preparation steps and process conditions were the same as in Example 1.
  • the XRD spectrum and excitation spectrum of this embodiment are similar to those of Example 1, and the emission spectrum is similar to that of Example 2.
  • the internal quantum efficiency of the fluorescent powder in this embodiment is 75%, and its integrated emission intensity still maintains 70% at 150° C. compared with room temperature.
  • Example 3 Except that the components in Example 3 were changed to Mg 0.8 (Ga 0.45 Al 0.45 Si 0.1 ) 2 O 4 :0.02Cr 3+ , other preparation steps and process conditions were the same as in Example 1.
  • the XRD spectrum and excitation spectrum of this embodiment are similar to those of Embodiment 1, and the emission spectrum is shown in FIG. 3 .
  • the internal quantum efficiency of the fluorescent powder in this embodiment is 92%, and its integrated emission intensity still maintains 85% at 150° C. compared with room temperature.
  • Example 1 Except that the composition in Example 1 was changed to Mg(Ga 0.9 Si 0.1 ) 2 O 4 :0.1Cr 3+ and the sintering temperature was changed to 1350°C and held for 7 hours, other preparation steps and process conditions were the same as in Example 1.
  • the XRD spectrum and excitation spectrum of this embodiment are similar to those of Example 1, and the emission spectrum is similar to that of Example 2.
  • the internal quantum efficiency of the fluorescent powder in this embodiment is 83%, and its integrated emission intensity still maintains 80% at 150° C. compared with room temperature.
  • Example 1 Except that the composition in Example 1 was changed to (Mg 0.9 Sr 0.2 )(Ga 0.7 Ge 0.1 Li 0.2 ) 2 O 4 :0.08Cr 3+ and the sintering temperature was changed to 1550°C and held for 7 hours, other preparation steps and processes The conditions are the same as in Example 1.
  • the XRD spectrum and excitation spectrum of this embodiment are similar to those of Example 1, and the emission spectrum is similar to that of Example 2.
  • the internal quantum efficiency of the fluorescent powder in this embodiment is 87%, and its integrated emission intensity still maintains 78% at 150° C. compared with room temperature.
  • Example 6 Except that the composition of Example 6 was changed to (Mg 0.8 Ca 0.1 )(Al 0.5 Ga 0.1 Si 0.1 K 0.3 ) 2 O 4 :0.06Cr 3+ and the sintering temperature was changed to 1550°C and held for 7 hours, other preparation steps and Processing condition is identical with embodiment 1.
  • the XRD spectrum and excitation spectrum of this embodiment are similar to those of Embodiment 1, and the emission spectrum is shown in FIG. 3 .
  • the internal quantum efficiency of the fluorescent powder in this embodiment is 82%, and its integrated emission intensity still maintains 80% at 150° C. compared with room temperature.
  • Embodiment 8 to embodiment 20 are identical to Embodiment 8 to embodiment 20:
  • the phosphor powder described in this embodiment has a chemical composition of MgAl 1.98 Cr 0.02 O 4 . According to their stoichiometric ratio, accurately weigh MgO, Al 2 O 3 and Cr 2 O 3 , and 3wt% flux H 3 BO 3 , after grinding and mixing, place the mixed raw materials in a high-temperature furnace containing 5vol% hydrogen Sintering at 1350° C. for 5 hours in a hydrogen-nitrogen-hydrogen mixed atmosphere to obtain a roasted product; after crushing and grinding the obtained roasted product, a phosphor powder belonging to a spinel structure can be obtained. The luminescent performance of the obtained phosphor was analyzed by a fluorescence spectrometer, and under the excitation of 450nm blue light, a narrow-band dark red light emission with an emission peak at 689nm was obtained.
  • the spectra of the devices in Examples 1, 2, and 4 combined with 450nm blue LED packages can achieve a large wavelength coverage and an adjustable peak wavelength.
  • the phosphor powder described in the present invention has the same crystal structure as the traditional aluminate or gallate spinel, it is only found that the specific element pair Cr is introduced into the spinel structure at the same time . + Ion lattice substitution distribution and local crystal field can be adjusted to achieve Cr 3+ efficient broadband near-infrared emission, which also shows that compared with the invention without introducing other elements, the technology disclosed in the present invention has significant advantages. progress.
  • the above-mentioned embodiment is only an example for the sake of clear description, other forms of changes or changes can also be made on the basis of the above description, and the obvious changes or changes derived therefrom still belong to the protection scope of the present invention within.
  • the preparation of the phosphor powder in the embodiment of the present invention adopts the solid phase sintering method, however, its preparation method is not limited to this, and other methods that can fully react the raw materials can obtain the phosphor powder described in the present invention. For example, spray pyrolysis method, combustion method, microwave-assisted heating method, precipitation method, hydrothermal method, sol-gel method, etc.
  • the raw materials used in the embodiments of the present invention can also use other compounds that contain corresponding elements but do not introduce foreign impurities.

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Abstract

Disclosed in the present invention are a broadband near-infrared fluorescent powder based on a spinel structure, a preparation method therefor and an application thereof. The chemical formula of the broadband near-infrared fluorescent powder is Ax(B1-yCy)2O4:zCr3+, wherein A is one or more of Mg, Zn, Ca, Sr, Ba, and Be elements, B is one or more of Ga, Al, Sc, In, Y, La, and Lu elements, C is one or more of Si, Sn, In, Ta, As, Li, Na, and K elements, 0.4≤x≤1.2, 0.01<y<0.50, and 0.01<z<0.20. The method comprises: uniformly mixing the raw materials to obtain a uniform mixture, calcining the uniform mixture in a high temperature furnace having an atmosphere, or adding a fluxing agent, cooling the calcined product, and grinding, sieving and washing the calcined product to obtain the broadband near-infrared fluorescent powder. The fluorescent powder prepared in the present invention has the advantages of wide emission wavelength coverage range, high luminous intensity, low thermal quenching, good physicochemical stability, etc., and is widely applied as a near-infrared light conversion material.

Description

基于尖晶石结构的宽带近红外荧光粉及其制备方法和应用Broadband near-infrared phosphor based on spinel structure and its preparation method and application 技术领域technical field
本发明属于发光材料技术领域的一种荧光粉及其制备方法和应用,具体涉及一种基于尖晶石结构的宽带近红外荧光粉及其制备方法和应用。The invention belongs to a fluorescent powder and its preparation method and application in the technical field of luminescent materials, and specifically relates to a broadband near-infrared fluorescent powder based on a spinel structure and its preparation method and application.
背景技术Background technique
发射波长位于650~1700nm近红外光源应用极为广泛,例如近红外(NIR)光谱仪、光学相干断层扫描系统和太阳模拟器等。特别是在NIR光谱技术,由于某些官能团中的含氢基团(O-H、N-H、C-H)的振动倍频和合频处于近红外区,因此,通过扫描样品的近红外光谱,即可分析样品中含氢基团的特征信息。将具有无损诊断与分析功能的NIR光谱技术与日益兴起的便携式智能终端设备(例如手机、智能手表)相结合,有望实现人们在日常生活中对食品、药物、衣物等的即时分析和对人体健康状态的实时监测。作为NIR光谱技术的核心部件之一,传统的宽带近红外光源不但效率低、而且体积大,无法满足集成化需求。Near-infrared light sources with emission wavelengths between 650 and 1700 nm are widely used, such as near-infrared (NIR) spectrometers, optical coherence tomography systems, and solar simulators. Especially in NIR spectroscopy, since the vibrational frequency doubling and combined frequency of hydrogen-containing groups (O-H, N-H, C-H) in some functional groups are in the near-infrared region, by scanning the near-infrared spectrum of the sample, it can be analyzed. Characteristic information of hydrogen-containing groups. Combining NIR spectroscopy technology with non-destructive diagnosis and analysis functions with rising portable smart terminal devices (such as mobile phones and smart watches) is expected to realize instant analysis of food, medicine, clothing, etc. in daily life and human health. Status real-time monitoring. As one of the core components of NIR spectroscopy technology, traditional broadband near-infrared light sources are not only inefficient, but also large in size, which cannot meet the needs of integration.
一种获得微型宽带NIR光源的方式是通过多波段LED NIR芯片集成,从而实现宽带NIR发射。例如,专利文献CN103156620A公开了一种使用数十个芯片组合实现超宽带发射(650~1700nm)的近红外光谱成像系统。但是,由于需要设计复杂的电路对每个芯片驱动电压和驱动电流进行控制,技术难度大、成本高、光谱稳定性差。而基于高效率、低成本的蓝光LED芯片与NIR荧光转换材料的荧光转换型NIR LED具有价格低、结构简单、体积小、光谱稳定等诸多优点。但是,作为荧光转换型NIR LED的关键部分,NIR荧光转换材料(荧光粉)依然存在诸如发射光谱范围窄、量子效率低、热稳定性差等问题亟待解决。One way to obtain a miniature broadband NIR light source is through the integration of multi-band LED NIR chips to achieve broadband NIR emission. For example, patent document CN103156620A discloses a near-infrared spectral imaging system that uses a combination of dozens of chips to realize ultra-broadband emission (650-1700nm). However, due to the need to design complex circuits to control the driving voltage and driving current of each chip, the technical difficulty is high, the cost is high, and the spectral stability is poor. Fluorescent conversion NIR LEDs based on high-efficiency, low-cost blue LED chips and NIR fluorescent conversion materials have many advantages such as low price, simple structure, small size, and stable spectrum. However, as a key part of fluorescent conversion NIR LEDs, NIR fluorescent conversion materials (phosphors) still have problems such as narrow emission spectrum range, low quantum efficiency, and poor thermal stability that need to be solved urgently.
专利文献CN109913214A,公布了一种组成为R xAl 1-yF x+3:yCr的NIR荧光粉,其发射范围在700~900nm;非专利文献Adv.Optical Mater.2020,8,2000296公布了组成为Gd 3Sc 2-xAl xGa 3O 12:Cr 3+的可发射650~900nm的NIR荧光粉,其内量子效率接近100%,在150℃下发射强度依然保持初始值的87%以上。尽管这些荧光粉具有优异的发光性能,但是其发射波长覆盖范围窄,无法单独满足NIR光谱技术需求,例如,生活中常见的水的特征吸收为于970nm左右。又如非专利文献ACS Energy Letters,2018,3,2679-2684公布了组成为La 3Ga 5GeO 14:Cr 3+可 发射覆盖650~1200nm的NIR荧光粉,虽然其发射带的半高宽高达300nm,能够满足NIR光谱技术对光谱范围的要求,但是其内量子效率极低(<30%),因而相应的荧光转换型NIRLED器件的NIR输出效率低。 Patent document CN109913214A discloses a NIR phosphor composed of R x Al 1-y F x+3 :yCr, whose emission range is 700-900nm; non-patent document Adv.Optical Mater.2020,8,2000296 publishes The NIR fluorescent powder composed of Gd 3 Sc 2-x Al x Ga 3 O 12 : Cr 3+ can emit 650-900nm, its internal quantum efficiency is close to 100%, and the emission intensity still maintains 87% of the initial value at 150°C above. Although these phosphors have excellent luminescent properties, their emission wavelength coverage is narrow and cannot meet the needs of NIR spectroscopy alone. For example, the characteristic absorption of water that is common in life is around 970nm. Another example is the non-patent literature ACS Energy Letters, 2018, 3, 2679-2684, which announced that the composition of La 3 Ga 5 GeO 14 : Cr 3+ can emit NIR phosphors covering 650-1200 nm, although the half-maximum width of the emission band is as high as 300nm, which can meet the requirements of NIR spectrum technology for the spectrum range, but its internal quantum efficiency is extremely low (<30%), so the NIR output efficiency of the corresponding fluorescence conversion NIRLED device is low.
因此,现有技术缺少了一种低成本、高效率及高热稳定性的超宽带NIR荧光粉,进而构建高性能的微型宽带NIR光源。Therefore, the prior art lacks a low-cost, high-efficiency, and high-thermal-stability ultra-broadband NIR phosphor to construct a high-performance miniature broadband NIR light source.
发明内容Contents of the invention
为了解决背景技术中存在的问题,本发明的目的在于提供了一种基于尖晶石结构的宽带近红外荧光粉;本发明的另一目的在于提供上述宽带近红外荧光粉的制备方法及其应用。本发明制备获得了低成本、高效率及高热稳定性的超宽带NIR荧光粉,进而构建高性能的微型宽带NIR光源。In order to solve the problems existing in the background technology, the object of the present invention is to provide a kind of broadband near-infrared phosphor based on spinel structure; another object of the present invention is to provide the preparation method and application of the above-mentioned broadband near-infrared phosphor . The invention prepares ultra-broadband NIR fluorescent powder with low cost, high efficiency and high thermal stability, and then constructs a high-performance miniature broadband NIR light source.
为实现上述目的,本发明的技术方案如下:To achieve the above object, the technical scheme of the present invention is as follows:
一、一种宽带近红外荧光粉:1. A broadband near-infrared phosphor:
所述的宽带近红外荧光粉为无机化合物,其化学式为A x(B 1-yC y) 2O 4:zCr 3+,其中,A为Mg、Zn、Ca、Sr、Ba、Be元素中的一种或多种,B为Ga、Al、Sc、In、Y、La、Lu元素中的一种或多种,C为Si、Sn、In、Ta、As、Li、Na、K元素中的一种或多种,且所述参数x、y、z满足如下条件: The broadband near-infrared fluorescent powder is an inorganic compound, and its chemical formula is A x (B 1-y Cy ) 2 O 4 :zCr 3+ , wherein A is Mg, Zn, Ca, Sr, Ba, Be element One or more of, B is one or more of Ga, Al, Sc, In, Y, La, Lu elements, C is Si, Sn, In, Ta, As, Li, Na, K elements One or more of , and the parameters x, y, z meet the following conditions:
0.4≤x≤1.2,0.01<y<0.50,0.01<z<0.20。0.4≤x≤1.2, 0.01<y<0.50, 0.01<z<0.20.
所述宽带近红外荧光粉的主晶相具有尖晶石结构。The main crystal phase of the broadband near-infrared phosphor has a spinel structure.
所述的荧光粉被波长范围为400~700nm的可见光有效激发,发射650~1300nm范围的近红外光。The fluorescent powder is effectively excited by visible light with a wavelength range of 400-700nm, and emits near-infrared light with a wavelength range of 650-1300nm.
二、一种权利要求1所述的宽带近红外荧光粉的制备方法,包括以下步骤:Two, a preparation method of the broadband near-infrared fluorescent powder as claimed in claim 1, comprising the following steps:
(1)按照权利要求1所述的化学计量比分别称取含有A、B、C和Cr的化合物为原料,A为Mg、Zn、Ca、Sr、Ba、Be元素中的一种或多种,B为Al、Ga、Sc、In、Y、La、Lu元素中的一种或多种,C为Si、Ge、Sn、In、Ta、As、Li、Na、K元素中的一种或多种,然后将原料充分混合均匀,得到均匀混合物;(1) According to the stoichiometric ratio described in claim 1, the compound containing A, B, C and Cr is weighed respectively as a raw material, and A is one or more of Mg, Zn, Ca, Sr, Ba, Be elements , B is one or more of Al, Ga, Sc, In, Y, La, Lu elements, C is one or more of Si, Ge, Sn, In, Ta, As, Li, Na, K elements Various, and then fully mix the raw materials evenly to obtain a uniform mixture;
(2)将所得均匀混合物或添加有助熔剂的均匀混合物在具有气氛的高温炉中在1200~1600℃下直接进行焙烧2~20h;(2) directly roasting the obtained homogeneous mixture or the homogeneous mixture with flux added at 1200-1600°C for 2-20 hours in a high-temperature furnace with an atmosphere;
(3)焙烧后的产物冷却后,经研磨、过筛、洗涤即得到所述宽带近红外荧光粉。(3) After the calcined product is cooled, it is ground, sieved and washed to obtain the broadband near-infrared phosphor.
所述步骤(1)中,化合物为含有对应元素的氧化物、硝酸盐、卤化物、碳酸盐中的一种或多种。In the step (1), the compound is one or more of oxides, nitrates, halides, and carbonates containing corresponding elements.
所述步骤(2)中进行了焙烧的热处理,热处理时间为2~20h。The heat treatment of calcination is carried out in the step (2), and the heat treatment time is 2 to 20 hours.
所述的助熔剂具体为:H 3BO 3、MgF 2、CaF 2、Li 2CO 3、PbO、BaF 2、PbF 2、KF、LiF中的一种或多种,且含量为均匀混合物总体质量的1-30%。 The flux is specifically: one or more of H 3 BO 3 , MgF 2 , CaF 2 , Li 2 CO 3 , PbO, BaF 2 , PbF 2 , KF, LiF, and the content is the overall mass of the homogeneous mixture 1-30% of.
所述步骤(2)中,气氛为空气、氧气、氢气、氮气和氢气混合气、氩气和氢气混合气或一氧化碳气体中的至少一种。In the step (2), the atmosphere is at least one of air, oxygen, hydrogen, nitrogen and hydrogen mixed gas, argon and hydrogen mixed gas or carbon monoxide gas.
三、一种荧光转换型LED器件,由上述制备方法制成的宽带近红外荧光粉。3. A fluorescent conversion LED device, which is a broadband near-infrared phosphor made by the above preparation method.
所述的LED器件包含光源和荧光转换材料,所述的宽带近红外荧光粉用于制备荧光转换材料。The LED device includes a light source and a fluorescent conversion material, and the broadband near-infrared phosphor is used to prepare the fluorescent conversion material.
所述光源包含发射波长位于400~700nm之间的LED芯片、激光二极管或有机EL发光器件。The light source includes an LED chip, a laser diode or an organic EL light emitting device whose emission wavelength is between 400nm and 700nm.
本发明能在400~700nm可见光激发下发射650~1300nm范围内的光。The invention can emit light in the range of 650-1300nm under the excitation of 400-700nm visible light.
优选的,所述光源为发射峰为400~700nm的半导体芯片,并优选发射波长为400-500nm的近紫外或蓝光LED芯片,或者600~700nm的红光芯片。Preferably, the light source is a semiconductor chip with an emission peak of 400-700 nm, and preferably a near-ultraviolet or blue LED chip with an emission wavelength of 400-500 nm, or a red light chip with an emission wavelength of 600-700 nm.
更优选的,将所述的荧光粉与胶水混合然后封装在发射400~500nm的蓝光LED芯片上,最终制备出荧光转换型宽带近红外光源。More preferably, the fluorescent powder is mixed with glue and then packaged on a blue LED chip emitting 400-500 nm to finally prepare a fluorescent conversion type broadband near-infrared light source.
本发明制备得到的荧光粉具有发射波长覆盖范围广、发光强度高、热猝灭低和物理化学稳定性好等优点,因而可作为近红外光转换材料而应用于夜视、食品分析、材料检测、医学成像、模拟太阳光谱等领域。The phosphor powder prepared by the present invention has the advantages of wide emission wavelength coverage, high luminous intensity, low thermal quenching, and good physical and chemical stability, so it can be used as a near-infrared light conversion material for night vision, food analysis, and material detection. , medical imaging, simulated solar spectrum and other fields.
本发明的有益效果:与现有技术相比,本发明具有以下显著优点:Beneficial effects of the present invention: Compared with the prior art, the present invention has the following significant advantages:
1、本发明荧光粉中通过Cr 3+的单一掺杂即可得到在波长范围为400-700nm的蓝光和红光激发下,发射650~1300nm且半高宽大于300nm的宽带近红外光,此荧光粉发光效率高且热稳定性好。 1. The single doping of Cr 3+ in the phosphor powder of the present invention can obtain the broadband near-infrared light of 650-1300nm and the half-maximum width greater than 300nm under the excitation of blue light and red light with a wavelength range of 400-700nm. Phosphor powder has high luminous efficiency and good thermal stability.
2、本发明荧光粉的制备方法简单、易操作,并且通过和可见光LED芯片或者激光二极管组合可以构建成微型宽带近红外光源。2. The preparation method of the phosphor powder of the present invention is simple and easy to operate, and can be constructed into a miniature broadband near-infrared light source by combining with a visible light LED chip or a laser diode.
附图说明Description of drawings
图1是实施例1制备的样品的XRD图谱;Fig. 1 is the XRD collection of illustrative plates of the sample prepared in embodiment 1;
图2是实施例1制备的样品的激发光谱;Fig. 2 is the excitation spectrum of the sample prepared in embodiment 1;
图3是实施例1、2、4、7和对比例1制备的样品的发射光谱;Fig. 3 is the emission spectrum of the sample prepared by embodiment 1, 2, 4, 7 and comparative example 1;
图4是实施例1、2、4制备的样品结合450nm蓝光LED封装的器件的光谱。Fig. 4 is the spectrum of the device packaged with the samples prepared in Examples 1, 2, and 4 combined with a 450nm blue LED.
具体实施方式Detailed ways
下面结合附图和具体实施对本发明作进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and specific implementation.
本发明的实施例如下:Embodiments of the present invention are as follows:
实施例1Example 1
其化学式为Mg 0.9(Al 0.95Si 0.05) 2O 4:0.1Cr 3+其制备步骤如下: Its chemical formula is Mg 0.9 (Al 0.95 Si 0.05 ) 2 O 4 :0.1Cr 3+ and its preparation steps are as follows:
1、分别称取MgO、Al 2O 3和Cr 2O 3,以及3wt%助熔剂H 3BO 3,在玛瑙研钵中经过约30分钟的研磨搅拌,最终混合均匀。 1. Weigh MgO, Al 2 O 3 , Cr 2 O 3 , and 3wt% flux H 3 BO 3 , grind and stir them in an agate mortar for about 30 minutes, and finally mix them evenly.
2、将混合均匀的原料在含有5vol%氢气的和氢氮氢气混合气氛下下于1350℃下烧结2h,得到焙烧产物2. Sinter the homogeneously mixed raw materials at 1350°C for 2 hours under a mixed atmosphere of hydrogen, nitrogen and hydrogen containing 5vol% hydrogen to obtain a roasted product
3、焙烧产物进过充分研磨、洗涤、过筛后即为本发明的宽带近红外荧光粉。3. The roasted product is the broadband near-infrared phosphor of the present invention after being fully ground, washed and sieved.
如图1所示,实施例1制备的样品的主晶相为属于立方尖晶石。As shown in FIG. 1 , the main crystal phase of the sample prepared in Example 1 belongs to cubic spinel.
如图2、图3所示,实施例1制备的样品在400~700nm范围内的可见光激发下,发射出宽带近红外光。As shown in FIG. 2 and FIG. 3 , the sample prepared in Example 1 emits broadband near-infrared light under the excitation of visible light in the range of 400-700 nm.
如图4所示,实施例1制备的样品可以结合450nm蓝光LED封装出荧光转换型宽带近红外LED器件,因而可以应用于近红外光谱技术、太阳模拟器等相关领域。As shown in Figure 4, the sample prepared in Example 1 can be combined with a 450nm blue LED to package a fluorescence conversion broadband near-infrared LED device, so it can be applied to near-infrared spectroscopy, solar simulators and other related fields.
此实施例荧光粉的内量子效率为85%,且其积分发射强度在150℃下相比于室温依然保持72%。The internal quantum efficiency of the fluorescent powder in this embodiment is 85%, and its integrated emission intensity still maintains 72% at 150° C. compared with room temperature.
实施例2Example 2
除了将分子式改为Mg 0.8(Al 0.8Si 0.2) 2O 4:0.1Cr 3+且烧结温度改为1400℃并保温5h外,其他制备步骤和工艺条件与实施例1相同。本实施例的XRD图谱和激发光谱与与实施例1相似,发射光谱如图3所示。 Except that the molecular formula was changed to Mg 0.8 (Al 0.8 Si 0.2 ) 2 O 4 :0.1Cr 3+ and the sintering temperature was changed to 1400°C and kept for 5 hours, other preparation steps and process conditions were the same as in Example 1. The XRD spectrum and excitation spectrum of this embodiment are similar to those of Embodiment 1, and the emission spectrum is shown in FIG. 3 .
此实施例荧光粉的内量子效率为80%,且其积分发射强度在150℃下相比于室温依然保持75%。The internal quantum efficiency of the fluorescent powder in this embodiment is 80%, and its integrated emission intensity still maintains 75% at 150° C. compared with room temperature.
实施例3Example 3
除了将分子式改为Zn 0.7[(Ga 0.9Al 0.1) 0.7Si 0.3] 2O 4:0.1Cr 3+且烧结温度改为1250℃并保温7h外,其他制备步骤和工艺条件与实施例1相同。本实施例的XRD图谱和激发光谱与与实施例1相似,发射光谱与实施例2相似。 Except that the molecular formula was changed to Zn 0.7 [(Ga 0.9 Al 0.1 ) 0.7 Si 0.3 ] 2 O 4 :0.1Cr 3+ and the sintering temperature was changed to 1250°C and held for 7 hours, other preparation steps and process conditions were the same as in Example 1. The XRD spectrum and excitation spectrum of this embodiment are similar to those of Example 1, and the emission spectrum is similar to that of Example 2.
此实施例荧光粉的内量子效率为75%,且其积分发射强度在150℃下相比于室温依然保持70%。The internal quantum efficiency of the fluorescent powder in this embodiment is 75%, and its integrated emission intensity still maintains 70% at 150° C. compared with room temperature.
实施例4Example 4
除了将实施例3中的组分改为Mg 0.8(Ga 0.45Al 0.45Si 0.1) 2O 4:0.02Cr 3+,其他制备步骤和工艺条件与实施例1相同。本实施例的XRD图谱和激发光谱与与实施例1相似,发射光谱如图3所示。 Except that the components in Example 3 were changed to Mg 0.8 (Ga 0.45 Al 0.45 Si 0.1 ) 2 O 4 :0.02Cr 3+ , other preparation steps and process conditions were the same as in Example 1. The XRD spectrum and excitation spectrum of this embodiment are similar to those of Embodiment 1, and the emission spectrum is shown in FIG. 3 .
此实施例荧光粉的内量子效率为92%,且其积分发射强度在150℃下相比于室温依然保持85%。The internal quantum efficiency of the fluorescent powder in this embodiment is 92%, and its integrated emission intensity still maintains 85% at 150° C. compared with room temperature.
实施例5Example 5
除了将实施例1中的组分改为Mg(Ga 0.9Si 0.1) 2O 4:0.1Cr 3+且烧结温度改为1350℃并保温7h外,其他制备步骤和工艺条件与实施例1相同。本实施例的XRD图谱和激发光谱与与实施例1相似,发射光谱与实施例2相似。 Except that the composition in Example 1 was changed to Mg(Ga 0.9 Si 0.1 ) 2 O 4 :0.1Cr 3+ and the sintering temperature was changed to 1350°C and held for 7 hours, other preparation steps and process conditions were the same as in Example 1. The XRD spectrum and excitation spectrum of this embodiment are similar to those of Example 1, and the emission spectrum is similar to that of Example 2.
此实施例荧光粉的内量子效率为83%,且其积分发射强度在150℃下相比于室温依然保持80%。The internal quantum efficiency of the fluorescent powder in this embodiment is 83%, and its integrated emission intensity still maintains 80% at 150° C. compared with room temperature.
实施例6Example 6
除了将实施例1中的组分改为(Mg 0.9Sr 0.2)(Ga 0.7Ge 0.1Li 0.2) 2O 4:0.08Cr 3+且烧结温度改为1550℃并保温7h外,其他制备步骤和工艺条件与实施例1相同。本实施例的XRD图谱和激发光谱与与实施例1相似,发射光谱与实施例2相似。 Except that the composition in Example 1 was changed to (Mg 0.9 Sr 0.2 )(Ga 0.7 Ge 0.1 Li 0.2 ) 2 O 4 :0.08Cr 3+ and the sintering temperature was changed to 1550°C and held for 7 hours, other preparation steps and processes The conditions are the same as in Example 1. The XRD spectrum and excitation spectrum of this embodiment are similar to those of Example 1, and the emission spectrum is similar to that of Example 2.
此实施例荧光粉的内量子效率为87%,且其积分发射强度在150℃下相比于室温依然保持78%。The internal quantum efficiency of the fluorescent powder in this embodiment is 87%, and its integrated emission intensity still maintains 78% at 150° C. compared with room temperature.
实施例7Example 7
除了将实施例6的组分改为(Mg 0.8Ca 0.1)(Al 0.5Ga 0.1Si 0.1K 0.3) 2O 4:0.06Cr 3+且烧结温度改为1550℃并保温7h外,其他制备步骤和工艺条件与实施例1相同。本实施例的XRD图谱和激发光谱与与实施例1相似,发射光谱如图3所示。 Except that the composition of Example 6 was changed to (Mg 0.8 Ca 0.1 )(Al 0.5 Ga 0.1 Si 0.1 K 0.3 ) 2 O 4 :0.06Cr 3+ and the sintering temperature was changed to 1550°C and held for 7 hours, other preparation steps and Processing condition is identical with embodiment 1. The XRD spectrum and excitation spectrum of this embodiment are similar to those of Embodiment 1, and the emission spectrum is shown in FIG. 3 .
此实施例荧光粉的内量子效率为82%,且其积分发射强度在150℃下相比于室温依然保持80%。The internal quantum efficiency of the fluorescent powder in this embodiment is 82%, and its integrated emission intensity still maintains 80% at 150° C. compared with room temperature.
实施例8至实施例20:Embodiment 8 to embodiment 20:
按表1中的实施例化学式组成及其化学计量比称取相应原料,其热处理温度和气氛见表1,其他步骤与上述实施例皆相同。According to the embodiment chemical formula composition and stoichiometric ratio in Table 1, take corresponding raw materials, its heat treatment temperature and atmosphere are shown in Table 1, and other steps are all the same as above-mentioned embodiment.
表1实施例5-10Table 1 Example 5-10
Figure PCTCN2022109943-appb-000001
Figure PCTCN2022109943-appb-000001
Figure PCTCN2022109943-appb-000002
Figure PCTCN2022109943-appb-000002
对比例1Comparative example 1
本实施例所述的荧光粉,其化学组成为MgAl 1.98Cr  0.02O 4。按其化学计量比,准确称量MgO、Al 2O 3和Cr 2O 3,以及3wt%助熔剂H 3BO 3,经研磨混匀后,将混合原料放置于高温炉中在含有5vol%氢气的氢氮氢混合气氛下于1350℃下烧结5h,得到焙烧产物;将所得焙烧产物进行破碎、研磨后,即可得到属于尖晶石结构的荧光粉。利用荧光光谱仪对得到的荧光粉的发光性能进行分析,在450nm的蓝光激发下,得到发射峰位于689nm的窄带深红光发射。 The phosphor powder described in this embodiment has a chemical composition of MgAl 1.98 Cr 0.02 O 4 . According to their stoichiometric ratio, accurately weigh MgO, Al 2 O 3 and Cr 2 O 3 , and 3wt% flux H 3 BO 3 , after grinding and mixing, place the mixed raw materials in a high-temperature furnace containing 5vol% hydrogen Sintering at 1350° C. for 5 hours in a hydrogen-nitrogen-hydrogen mixed atmosphere to obtain a roasted product; after crushing and grinding the obtained roasted product, a phosphor powder belonging to a spinel structure can be obtained. The luminescent performance of the obtained phosphor was analyzed by a fluorescence spectrometer, and under the excitation of 450nm blue light, a narrow-band dark red light emission with an emission peak at 689nm was obtained.
如图3所示,将实施例1、2、4、7和对比例1的发射光谱进行对比,在相同波长蓝光激发下,实施例中的发射光谱的发射峰位明显红移,且光谱半高宽逐渐增大,而对比例仅仅为发射窄带的深红光。As shown in Figure 3, comparing the emission spectra of Examples 1, 2, 4, 7 and Comparative Example 1, under the same wavelength of blue light excitation, the emission peak of the emission spectrum in the embodiment is obviously red-shifted, and the spectrum is half The height and width gradually increase, while the comparative example only emits narrow-band dark red light.
如图4所示,实施例1、2、4样品结合450nm蓝光LED封装的器件的光谱可以实现波长覆盖范围大且峰值波长可调。As shown in FIG. 4 , the spectra of the devices in Examples 1, 2, and 4 combined with 450nm blue LED packages can achieve a large wavelength coverage and an adjustable peak wavelength.
通过以上实施例可以看出,尽管本发明所述的荧光粉具有与传统铝酸盐或者镓酸盐尖晶石相同晶体结构,但发现只有同时在尖晶石结构中引入特定的元素对Cr 3+离子的格位取代分布和局域晶体场进行调控,才可以实现Cr 3+高效的宽带近红外发射,这也说明与未引入其他元素的发明相比,本发明所公布的技术具有显著的进步。 As can be seen from the above examples, although the phosphor powder described in the present invention has the same crystal structure as the traditional aluminate or gallate spinel, it is only found that the specific element pair Cr is introduced into the spinel structure at the same time . + Ion lattice substitution distribution and local crystal field can be adjusted to achieve Cr 3+ efficient broadband near-infrared emission, which also shows that compared with the invention without introducing other elements, the technology disclosed in the present invention has significant advantages. progress.
显然,上述实施例仅仅是为了清楚的说明所作的举例,在上述说明的基础上还可以做出其他形式的变动或变化,由此所引申出的显而易见的变化或变动仍属于本发明的保护范围之内。本发明实施例中荧光粉的制备采用了固相烧结 法,然而,其制备方法并不局限于此,其他能够可以让原料充分反应的方法均可以获得本发明所述的荧光粉。例如,喷雾热分解法、燃烧法、微波辅助加热法、沉淀法、水热法、溶胶凝胶法等。本发明实施例中所采用的原料也可以使用含有相应元素但不引入外来杂质的其他化合物。Apparently, the above-mentioned embodiment is only an example for the sake of clear description, other forms of changes or changes can also be made on the basis of the above description, and the obvious changes or changes derived therefrom still belong to the protection scope of the present invention within. The preparation of the phosphor powder in the embodiment of the present invention adopts the solid phase sintering method, however, its preparation method is not limited to this, and other methods that can fully react the raw materials can obtain the phosphor powder described in the present invention. For example, spray pyrolysis method, combustion method, microwave-assisted heating method, precipitation method, hydrothermal method, sol-gel method, etc. The raw materials used in the embodiments of the present invention can also use other compounds that contain corresponding elements but do not introduce foreign impurities.

Claims (10)

  1. 一种宽带近红外荧光粉,其特征在于:A broadband near-infrared phosphor, characterized in that:
    所述的宽带近红外荧光粉为无机化合物,其化学式为A x(B 1-yC y) 2O 4:zCr 3+,其中,A为Mg、Zn、Ca、Sr、Ba、Be元素中的一种或多种,B为Ga、Al、Sc、In、Y、La、Lu元素中的一种或多种,C为Si、Sn、In、Ta、As、Li、Na、K元素中的一种或多种,且所述参数x、y、z满足如下条件: The broadband near-infrared fluorescent powder is an inorganic compound, and its chemical formula is A x (B 1-y Cy ) 2 O 4 :zCr 3+ , wherein A is Mg, Zn, Ca, Sr, Ba, Be element One or more of, B is one or more of Ga, Al, Sc, In, Y, La, Lu elements, C is Si, Sn, In, Ta, As, Li, Na, K elements One or more of , and the parameters x, y, z meet the following conditions:
    0.4≤x≤1.2,0.01<y<0.50,0.01<z<0.20。0.4≤x≤1.2, 0.01<y<0.50, 0.01<z<0.20.
  2. 如权利要求1所述的宽带近红外荧光粉,其特征在于:所述宽带近红外荧光粉的主晶相具有尖晶石结构。The broadband near-infrared phosphor according to claim 1, wherein the main crystal phase of the broadband near-infrared phosphor has a spinel structure.
  3. 如权利要求1所述的宽带近红外荧光粉,其特征在于:所述的荧光粉被波长范围为400~700nm的可见光有效激发,发射650~1300nm范围的近红外光。The broadband near-infrared phosphor according to claim 1, wherein the phosphor is effectively excited by visible light with a wavelength range of 400-700 nm, and emits near-infrared light in the range of 650-1300 nm.
  4. 一种权利要求1所述的宽带近红外荧光粉的制备方法,其特征在于,包括以下步骤:A preparation method of the broadband near-infrared fluorescent powder according to claim 1, characterized in that, comprising the following steps:
    (1)按照权利要求1所述的化学计量比分别称取含有A、B、C和Cr的化合物为原料,A为Mg、Zn、Ca、Sr、Ba、Be元素中的一种或多种,B为Al、Ga、Sc、In、Y、La、Lu元素中的一种或多种,C为Si、Ge、Sn、In、Ta、As、Li、Na、K元素中的一种或多种,然后将原料充分混合均匀,得到均匀混合物;(1) According to the stoichiometric ratio described in claim 1, the compound containing A, B, C and Cr is weighed respectively as a raw material, and A is one or more of Mg, Zn, Ca, Sr, Ba, Be elements , B is one or more of Al, Ga, Sc, In, Y, La, Lu elements, C is one or more of Si, Ge, Sn, In, Ta, As, Li, Na, K elements Various, and then fully mix the raw materials evenly to obtain a uniform mixture;
    (2)将所得均匀混合物或添加有助熔剂的均匀混合物在具有气氛的高温炉中在1200~1600℃下直接进行焙烧2~20h;(2) directly roasting the obtained homogeneous mixture or the homogeneous mixture with flux added at 1200-1600°C for 2-20 hours in a high-temperature furnace with an atmosphere;
    (3)焙烧后的产物冷却后,经研磨、过筛、洗涤即得到所述宽带近红外荧光粉。(3) After the calcined product is cooled, it is ground, sieved and washed to obtain the broadband near-infrared phosphor.
  5. 根据权利要求4所述的宽带近红外荧光粉的制备方法,其特征在于:The preparation method of broadband near-infrared phosphor powder according to claim 4, is characterized in that:
    所述步骤(1)中,化合物为氧化物、硝酸盐、卤化物、碳酸盐中的一种或多种。In the step (1), the compound is one or more of oxides, nitrates, halides, and carbonates.
  6. 根据权利要求4所述的宽带近红外荧光粉的制备方法,其特征在于:The preparation method of broadband near-infrared phosphor powder according to claim 4, is characterized in that:
    所述的助熔剂具体为:H 3BO 3、MgF 2、CaF 2、Li 2CO 3、PbO、BaF 2、PbF 2、KF、LiF中的一种或多种,且含量为均匀混合物总体质量的1-30%。 The flux is specifically: one or more of H 3 BO 3 , MgF 2 , CaF 2 , Li 2 CO 3 , PbO, BaF 2 , PbF 2 , KF, LiF, and the content is the overall mass of the homogeneous mixture 1-30% of.
  7. 根据权利要求4所述的宽带近红外荧光粉的制备方法,其特征在于:The preparation method of broadband near-infrared phosphor powder according to claim 4, is characterized in that:
    所述步骤(2)中,气氛为空气、氧气、氢气、氮气和氢气混合气、氩气和氢气混合气或一氧化碳气体中的至少一种。In the step (2), the atmosphere is at least one of air, oxygen, hydrogen, nitrogen and hydrogen mixed gas, argon and hydrogen mixed gas or carbon monoxide gas.
  8. 一种荧光转换型LED器件,其特征在于,是由权利要求2-6任一所述制 备方法制成的宽带近红外荧光粉。A fluorescent conversion type LED device is characterized in that it is a broadband near-infrared fluorescent powder made by the preparation method described in any one of claims 2-6.
  9. 根据权利要求1所述的宽带近红外荧光粉在制备荧光转换型LED器件中的应用,其特征在于,所述的LED器件包含光源和荧光转换材料,所述的宽带近红外荧光粉用于制备荧光转换材料。The application of the broadband near-infrared phosphor powder in the preparation of fluorescent conversion LED devices according to claim 1, wherein the LED device comprises a light source and a fluorescent conversion material, and the broadband near-infrared phosphor powder is used to prepare Fluorescence conversion material.
  10. 根据权利要求9所述的应用,其特征在于,所述光源包含发射波长位于400~700nm之间的LED芯片、激光二极管或有机EL发光器件。The application according to claim 9, wherein the light source comprises an LED chip, a laser diode or an organic EL light emitting device with an emission wavelength between 400nm and 700nm.
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