WO2023123720A1 - 一种适用于亚毫米波频段的波导cpw过渡转换装置 - Google Patents

一种适用于亚毫米波频段的波导cpw过渡转换装置 Download PDF

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WO2023123720A1
WO2023123720A1 PCT/CN2022/084438 CN2022084438W WO2023123720A1 WO 2023123720 A1 WO2023123720 A1 WO 2023123720A1 CN 2022084438 W CN2022084438 W CN 2022084438W WO 2023123720 A1 WO2023123720 A1 WO 2023123720A1
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cpw
waveguide
frequency band
wave frequency
conduction
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PCT/CN2022/084438
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English (en)
French (fr)
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许靓
郭嘉帅
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深圳飞骧科技股份有限公司
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Publication of WO2023123720A1 publication Critical patent/WO2023123720A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
    • H04B10/071—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using a reflected signal, e.g. using optical time domain reflectometers [OTDR]

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  • the utility model relates to the technical field of wireless communication and radar systems, in particular to a waveguide CPW transition conversion device suitable for the submillimeter wave frequency band.
  • the submillimeter wave frequency band also known as terahertz THz, the frequency is higher than 300GHz
  • waveguide and planar transmission line there are two main transmission lines: waveguide and planar transmission line.
  • the circuit module using the waveguide structure has the advantages of convenient testing and easy interconnection with other active and passive circuits and antennas to form a terahertz frequency band application system.
  • the signal transmission line on the terahertz chip is mostly a planar transmission line structure, and its port is generally a coplanar waveguide (CPW).
  • CPW coplanar waveguide
  • Most of the existing waveguide probe type conversion devices use microstrip structure probes. There are disadvantages such as dispersion and loss, and it is no longer applicable to the terahertz frequency band. Therefore, it is necessary to find a transition structure suitable for the CPW transmission line and waveguide in the terahertz frequency band, and perform low-loss interconnection with the terahertz integrated circuit, and finally form a system-level interconnection.
  • the traditional waveguide-probe-microstrip transition structure relies on the short-circuit surface for coupling.
  • the size of the waveguide window has to be further reduced, and the waveguide window The size directly determines the width of an integrated circuit that can be assembled. It can be seen from this that the existing traditional structure will severely restrict the width of a terahertz integrated circuit.
  • This utility model is to overcome at least one of the above technical problems and provide a waveguide suitable for the submillimeter wave frequency band, which is used to widen the cavity part of the internal assembly transition chip, and eliminates the constraint factor for the later TMIC circuit width design
  • the CPW transition conversion device is to overcome at least one of the above technical problems and provide a waveguide suitable for the submillimeter wave frequency band, which is used to widen the cavity part of the internal assembly transition chip, and eliminates the constraint factor for the later TMIC circuit width design The CPW transition conversion device.
  • the utility model provides a waveguide CPW transition conversion device suitable for the submillimeter wave frequency band, including:
  • one side of the waveguide is recessed inwardly to form an installation cavity
  • the substrate is disposed in the installation cavity
  • the CPW conduction strip includes a first CPW conduction strip and a second CPW conduction strip oppositely arranged on the substrate, the first CPW conduction strip is provided with a first grounding plate, and the second CPW conduction strip is arranged on the substrate.
  • the CPW conduction belt is provided with a second grounding plate, the first grounding plate is provided with a plurality of first back holes, and the second grounding plate is provided with a plurality of second back holes;
  • a plurality of air bridges are respectively connected to the first CPW conduction band and the second CPW conduction band;
  • Dipoles the dipoles include a first dipole and a second dipole, the first dipole is relatively arranged on both sides of the first CPW conduction band, and the second dipole oppositely disposed on both sides of the second CPW conduction band.
  • the installation cavity is provided in a straight-through structure.
  • a gold-plated layer is also provided on the back of the CPW conduction tape.
  • the thickness of the gold-plated layer is 5um.
  • the thickness of the CPW conduction band is 1um.
  • a plurality of the first back holes are correspondingly arranged with a plurality of the second back holes.
  • the plurality of first back holes and the plurality of second back holes have a uniform diameter of 110 um.
  • the substrate is an InP substrate with a high dielectric constant.
  • the length, width and thickness of the InP substrate are 740um, 550um and 50um respectively.
  • the utility model has no short-circuit surface in the probe transition structure through the setting of the CPW transition conversion device, and only performs coupling of the TE10 mode through the dipole structure at the front end of the substrate, which can be used for assembling the transition chip internally.
  • the cavity part is widened, which eliminates the constraint factors for the later TMIC circuit width design; at the same time, the device has the characteristics of small size, high reliability, and easy assembly.
  • Fig. 1 is a schematic structural diagram of a waveguide CPW transition conversion device suitable for the submillimeter wave frequency band provided by the present invention
  • Fig. 2 is a schematic diagram of the decomposition structure of the waveguide CPW transition conversion device suitable for the submillimeter wave frequency band provided by the present invention
  • Fig. 3 is the structural representation of the CPW conduction band provided by the utility model
  • FIG. 4 is a schematic diagram of the optimization simulation results of FIG. 1 .
  • the utility model provides a waveguide CPW transition conversion device suitable for the submillimeter wave frequency band, including: waveguide 1, substrate 2, CPW conduction band 3, multiple air bridges 6 and dipoles son.
  • the CPW guide strip 3 includes a first CPW disposed opposite to the substrate 2 A conduction band 31 and a second CPW conduction band 32, the first CPW conduction band 31 is provided with a first grounding plate 9, the second CPW conduction band 32 is provided with a second grounding plate 10, the first grounding plate 9 A plurality of first backholes 4 are arranged on the second ground plate 10, and a plurality of second backholes 5 are arranged on the second ground plate 10; the two ends of the plurality of air bridges 6 are respectively connected to the first CPW conduction strip 31 and the On the second CPW conduction band 32; the dipoles include a first dipole 7 and a second dipole 8, and the first dipole 7 is relatively arranged on both sides of the first CPW conduction band 31 , the second dipole 8 is oppositely arranged on both sides of the second CPW conduction
  • the CPW conduction band 3 is a CPW transmission line with an impedance of 50 ohms.
  • first back hole 4 and the second back hole 5 respectively provided on the first ground plate 9 and the second ground plate 10 of the first CPW conduction strip 31 and the second CPW conduction strip 32, not only can To suppress the effect of the balance plate mode, it can also provide a better grounding effect for the CPW conduction band 3.
  • the problem of mode conversion from the coplanar stripline CPS to CPW can be eliminated.
  • a plurality of air bridges 6 are arranged side by side with equal intervals between each other, so that the mode conversion effect is better.
  • the first dipole 7 and the second dipole 8 are respectively arranged on the two ends of the first CPW conduction band 31 and the second CPW conduction band 32, and the TE10 mode is performed through the dipole structure at the front end of the substrate.
  • the coupling can widen the cavity part used to assemble the transition chip inside, and eliminate the constraint factor for the later TMIC circuit width design.
  • the structural surface shows that the insertion loss of this dipole transition is less than 1.5db in the range of 285-309GHz. This transition has the characteristics of small size, high reliability, and easy assembly. In future research, this dipole-based transition can be used for monolithic fabrication of TMIC amplifiers around 300 GHz.
  • the coupled TE10 mode is the strongest.
  • the substrate 2 is arranged in a square structure
  • the CPW conduction band 3 is arranged in a square structure
  • the dipole is arranged in a bent structure.
  • the installation cavity 11 is provided in a straight-through structure.
  • the straight-through structure is adopted, there is no short-circuit surface in the probe transition structure, and the coupling of the TE10 mode is only performed through the dipole structure at the front end of the substrate. It is possible to widen the internal cavity part for assembling the transition chip, which eliminates the constraint factors for the later TMIC circuit width design.
  • a gold-plated layer is also provided on the back of the CPW conduction strip 3 .
  • the thickness of the CPW conduction band 3 is increased, so as to increase the strength of the overall structure.
  • the thickness of the gold-plated layer is 5um.
  • the thickness of the CPW conduction tape 3 is 1um.
  • first back holes 4 there are two first back holes 4 and two second back holes 5 .
  • a plurality of first back holes 4 are provided corresponding to a plurality of second back holes 5 .
  • the effect of suppressing the parallel plate mode is better, and it can also provide a better grounding effect for CPW.
  • the diameters of the plurality of first back holes 4 and the plurality of second back holes 5 are evenly 110 um.
  • the substrate 2 is an InP substrate with a high dielectric constant.
  • the length, width and thickness of the InP substrate are 740um, 550um and 50um, respectively.
  • the standard WR2.8 waveguide 1 interface is still used for the size of the rectangular waveguide 1 port
  • the substrate 2 is an InP substrate with a high dielectric constant
  • the thickness is 50um
  • the top layer CPW conductor is 1um thick
  • the gold-plated layer is 5um
  • the diameter of the back hole 4 and the second back hole 5 is 110um
  • the size of the substrate 550um ⁇ 740um.
  • the transition performance is simulated using the simulation model made in FIG. 1 , and the simulation results are shown in FIG. 4 : in the range of 310GHz-330GHz, the return loss is greater than 15dB, and the insertion loss is less than 2.3dB. From the simulation results, this structure has low insertion loss and simple structure, and can be widely used in the design of terahertz monolithic integrated circuits.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
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Abstract

本实用新型提供了一种适用于亚毫米波频段的波导CPW过渡转换装置，包括：波导，所述波导一侧向内凹陷形成安装腔体；衬底，所述衬底设置于所述安装腔体内；CPW导带，所述CPW导带包括相对设置于所述衬底上的第一CPW导带和第二CPW导带，所述第一CPW导带上设有第一接地板，所述第二CPW导带上设有第二接地板，所述第一接地板上设置多个第一背孔，所述第二接地板上设置有多个第二背孔；多个空气桥，多个空气桥的两端分别连接在第一CPW导带和第二CPW导带上；偶极子，所述偶极子包括第一偶极子和第二偶极子，所述第一偶极子相对设置在所述第一CPW导带的两侧，所述第二偶极子相对设置在所述第二CPW导带的两侧。本实用新型能具有体积小、可靠性高，易于组装等特点。

Description

一种适用于亚毫米波频段的波导CPW过渡转换装置 【技术领域】
本实用新型涉及无线通讯和雷达系统技术领域，尤其涉及一种适用于亚毫米波频段的波导CPW过渡转换装置。
【背景技术】
在亚毫米波频段(也称太赫兹THz，频率高于300GHz以上)，主要的传输线有波导和平面传输线两种。采用波导结构的电路模块具有测试方便，以及且便于与其它有源、无源电路及天线等互联组成形成太赫兹频段应用系统等优势。然而太赫兹芯片上的信号传输线却多为平面传输线结构，其端口一般为共面波导(CPW)，现有波导探针型转换装置大多采用微带结构探针，而太赫兹频段，微带传输线存在色散及损耗等劣势，已不能适用于太赫兹频段。因此需要找到适合于太赫兹频段CPW传输线与波导的过渡结构，并将其与太赫兹集成电路进行低损耗互联，最终形成系统级互联。
传统的波导-探针-微带过渡结构是依靠短路面进行耦合，当频率上升时，为了更好的耦合TE10模和抑制高次模，则不得不将波导窗的尺寸进一步缩小，而波导窗尺寸大小直接决定可装配的集成电路的宽度，从此可看出，现有传统结构将严重制约太赫兹集成电路的宽度尺寸。
因此，实有必要提供一种新的适用于亚毫米波频段的波导CPW过渡转换装置以解决上述技术问题。
【实用新型内容】
本实用新型的目的是克服上述至少一个技术问题，提供一种适用于亚毫米波频段的波导，用于对内部装配过渡芯片的腔体部分进行加宽，为后期TMIC电路宽度设计消除了束缚因素的CPW过渡转换装置。
为了实现上述目的，本实用新型提供一种适用于亚毫米波频段的波导CPW过渡转换装置，包括：
波导，所述波导一侧向内凹陷形成安装腔体；
衬底，所述衬底设置于所述安装腔体内；
CPW导带，所述CPW导带包括相对设置于所述衬底上的第一CPW导带和第二CPW导带，所述第一CPW导带上设有第一接地板，所述第二CPW导带上设有第二接地板，所述第一接地板上设置多个第一背孔，所述第二接地板上设置有多个第二背孔；
多个空气桥，多个所述空气桥的两端分别连接在所述第一CPW导带和所述第二CPW导带上；
偶极子，所述偶极子包括第一偶极子和第二偶极子，所述第一偶极子相对设置在所述第一CPW导带的两侧，所述第二偶极子相对设置在所述第二CPW导带的两侧。
更进一步地，所述安装腔体为直通结构设置。
更进一步地，所述CPW导带的背面还设有一镀金层。
更进一步地，所述镀金层的厚度为5um。
更进一步地，所述CPW导带的厚度为1um。
更进一步地，多个所述第一背孔为2个，多个所述第二背孔为2个。
更进一步地，多个所述第一背孔与多个所述第二背孔对应设置。
更进一步地，多个所述第一背孔和多个所述第二背孔的直径均匀110um。
更进一步地，所述衬底为高介电常数的InP基片。
更进一步地，所述InP基片长度、宽度及厚度分别为740um、550um及50um。
与相关技术相比，本实用新型通过CPW过渡转换装置的设置，没有探针过渡结构中短路面，只是通过基片前端的偶极子结构进行TE10模的耦合，可以对内部用于装配过渡芯片的腔体部分进行加宽，为后 期TMIC电路宽度设计消除了束缚因素；同时该装置具有体积小、可靠性高，易于组装等特点。
【附图说明】
为了更清楚地说明本实用新型实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为本实用新型提供的适用于亚毫米波频段的波导CPW过渡转换装置的结构示意图；
图2为本实用新型提供的适用于亚毫米波频段的波导CPW过渡转换装置的分解结构示意图；
图3为本实用新型提供的CPW导带的结构示意图；
图4为图1的优化仿真结果示意图。
图中，1、波导，2、衬底，3、CPW导带，31、第一CPW导带，32、第二CPW导带，4、第一背孔，5、第二背孔，6、空气桥，7、第一偶极子，8、第二偶极子，9、第一接地板，10、第二接地板。
【具体实施方式】
下面将结合本实用新型实施例中的附图，对本实用新型实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本实用新型的一部分实施例，而不是全部的实施例。基于本实用新型中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本实用新型保护的范围。
请参阅图1-4所示，本实用新型提供一种适用于亚毫米波频段的波导CPW过渡转换装置，包括：波导1、衬底2、CPW导带3、多个空气桥6及偶极子。
所述波导1一侧向内凹陷形成安装腔体11；所述衬底2设置于所述安装腔体11内；所述CPW导带3包括相对设置于所述衬底2上的第一CPW导带31和第二CPW导带32，所述第一CPW导带31上设有第一接地板9，所述第二CPW导带32上设有第二接地板10，第一接地板9上设置多个第一背孔4，第二接地板10上设置有多个第二背孔5；多个所述空气桥6的两端分别连接在所述第一CPW导带31和所述第二CPW导带32上；所述偶极子包括第一偶极子7和第二偶极子8，所述第一偶极子7相对设置在所述第一CPW导带31的两侧，所述第二偶极子8相对设置在所述第二CPW导带32的两侧。
具体的，CPW导带3为阻抗50欧姆的CPW传输线。通过将波导1内形成安装腔体11用于安装过渡转换装置，通过波导1腔体内部加宽部分的长度和宽度，适应多种集成电路的尺寸。
具体的，通过在分别第一CPW导带31和第二CPW导带32的第一接地板9、第二接地板10上分别设置的第一背孔4和第二背孔5，不仅可以起到抑制平衡板模式的作用，还可以给CPW导带3提供更好的接地效果。通过在所述第一CPW导带31和所述第二CPW导带32制作的多个空气桥6，可以起到消除共面带线CPS到CPW的模式转换问题。
进一步的，多个空气桥6并排设置，相互之间间隔相等，模式转换效果更佳。
具体的，通过第一偶极子7和第二偶极子8分别设置在第一CPW导带31和第二CPW导带32的两端上，通过基片前端的偶极子结构进行TE10模的耦合，可以对内部用于装配过渡芯片的腔体部分进行加宽，为后期TMIC电路宽度设计消除了束缚因素。经过优化、制作和测试，结构表面，这个偶极子跃迁的插入损耗在285-309GHz范围内小于1.5db。这种跃迁具有体积小、可靠性高，易于组装等特点。在未来的研究中，这种基于偶极子的跃迁可以用于在300GHz左右的TMIC放大器单片制作。
进一步的，另外偶极子在距离安装腔体11基座大约1/4波导1波长时，耦合的TE10模最强。
其中，衬底2为方形结构设置，CPW导带3为方形结构设置，偶极子为弯折结构设置。
在本实施例中，所述安装腔体11为直通结构设置。采用直通结构，没有探针过渡结构中短路面，只是通过基片前端的偶极子结构进行TE10模的耦合。可以对内部用于装配过渡芯片的腔体部分进行加宽，为后期TMIC电路宽度设计消除了束缚因素。
在本实施例中，所述CPW导带3的背面还设有一镀金层。增加CPW导带3的厚度，从而便于增加整体结构强度。
在本实施例中，所述镀金层的厚度为5um。
在本实施例中，所述CPW导带3的厚度为1um。
在本实施例中，多个所述第一背孔4为2个，多个所述第二背孔5为2个。
在本实施例中，多个所述第一背孔4与多个所述第二背孔5对应设置。通过背孔对应设置，起到抑制平行板模式的作用效果更佳，还可以给CPW提供更好的接地效果。
在本实施例中，多个所述第一背孔4和多个所述第二背孔5的直径均匀110um。
在本实施例中，所述衬底2为高介电常数的InP基片。
在本实施例中，所述InP基片长度、宽度及厚度分别为740um、550um及50um。
具体的，通过对矩形波导1口尺寸仍采用标准WR2.8波导1接口，衬底2采用高介电常数的InP基片，厚度为50um，顶层CPW导体厚1um，镀金层为5um，第一背孔4和第二背孔5的直径为110um，基片尺寸：550um×740um。通过不同参量设置，便于提高过渡转换装置的过渡性能，同时，具有体积小、可靠性高，易于组装等特点。
在本实施例中，采用图1制作的仿真模型对过渡性能进行仿真， 仿真结果如图4所示：在310GHz-330GHz范围内，回波损耗大于15dB，插入损耗小于2.3dB。从仿真结果看，此结构具有插入损耗小，结构简单，可广泛应用到太赫兹单片集成电路的设计中。
以上所述的仅是本实用新型的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本实用新型创造构思的前提下，还可以做出改进，但这些均属于本实用新型的保护范围。

Claims (10)

  1. 一种适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，包括：
    波导，所述波导一侧向内凹陷形成安装腔体；
    衬底，所述衬底设置于所述安装腔体内；
    CPW导带，所述CPW导带包括相对设置于所述衬底上的第一CPW导带和第二CPW导带，所述第一CPW导带上设有第一接地板，所述第二CPW导带上设有第二接地板，所述第一接地板上设置多个第一背孔，所述第二接地板上设置有多个第二背孔；
    多个空气桥，多个所述空气桥的两端分别连接在所述第一CPW导带和所述第二CPW导带上；
    偶极子，所述偶极子包括第一偶极子和第二偶极子，所述第一偶极子相对设置在所述第一CPW导带的两侧，所述第二偶极子相对设置在所述第二CPW导带的两侧。
  2. 根据权利要求1所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，所述安装腔体为直通结构设置。
  3. 根据权利要求1所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，所述CPW导带的背面还设有一镀金层。
  4. 根据权利要求3所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，所述镀金层的厚度为5um。
  5. 根据权利要求1所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，所述CPW导带的厚度为1um。
  6. 根据权利要求1所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，多个所述第一背孔为2个，多个所述第二背孔为2个。
  7. 根据权利要求1所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，多个所述第一背孔与多个所述第二背孔对应设置。
  8. 根据权利要求1所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，多个所述第一背孔和多个所述第二背孔的直径均匀110um。
  9. 根据权利要求1所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，所述衬底为高介电常数的InP基片。
  10. 根据权利要求9所述的适用于亚毫米波频段的波导CPW过渡转换装置，其特征在于，所述InP基片长度、宽度及厚度分别为740um、550um及50um。
PCT/CN2022/084438 2021-12-28 2022-03-31 一种适用于亚毫米波频段的波导cpw过渡转换装置 WO2023123720A1 (zh)

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