WO2023101613A3 - Method of forming silicon carbide epitaxial wafer and silicon carbide substrate - Google Patents

Method of forming silicon carbide epitaxial wafer and silicon carbide substrate Download PDF

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Publication number
WO2023101613A3
WO2023101613A3 PCT/SG2022/050879 SG2022050879W WO2023101613A3 WO 2023101613 A3 WO2023101613 A3 WO 2023101613A3 SG 2022050879 W SG2022050879 W SG 2022050879W WO 2023101613 A3 WO2023101613 A3 WO 2023101613A3
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WO
WIPO (PCT)
Prior art keywords
silicon carbide
epitaxial wafer
forming
substrate
carbide substrate
Prior art date
Application number
PCT/SG2022/050879
Other languages
French (fr)
Other versions
WO2023101613A2 (en
Inventor
Ye Sheng YEE
Original Assignee
Agency For Science, Technology And Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency For Science, Technology And Research filed Critical Agency For Science, Technology And Research
Publication of WO2023101613A2 publication Critical patent/WO2023101613A2/en
Publication of WO2023101613A3 publication Critical patent/WO2023101613A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Various embodiments may relate to a method of forming a silicon carbide epitaxial wafer. The method may include providing a silicon carbide substrate with a predetermined negative substrate bow, and forming a silicon carbide epitaxial layer on a front surface of the silicon carbide substrate.
PCT/SG2022/050879 2021-12-03 2022-12-02 Method of forming silicon carbide epitaxial wafer and silicon carbide substrate WO2023101613A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10202113497Q 2021-12-03
SG10202113497Q 2021-12-03

Publications (2)

Publication Number Publication Date
WO2023101613A2 WO2023101613A2 (en) 2023-06-08
WO2023101613A3 true WO2023101613A3 (en) 2023-07-06

Family

ID=86613205

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SG2022/050879 WO2023101613A2 (en) 2021-12-03 2022-12-02 Method of forming silicon carbide epitaxial wafer and silicon carbide substrate

Country Status (1)

Country Link
WO (1) WO2023101613A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014144880A (en) * 2013-01-28 2014-08-14 Mitsubishi Electric Corp Production apparatus of single crystal, and production method of silicon carbide single crystal using the same
JP2015093806A (en) * 2013-11-12 2015-05-18 住友電気工業株式会社 Manufacturing apparatus and manufacturing method for silicon carbide substrate
JP2017226583A (en) * 2016-06-23 2017-12-28 トヨタ自動車株式会社 Production method for sic single crystal
CN112908839A (en) * 2019-12-03 2021-06-04 上海积塔半导体有限公司 Method for reducing silicon carbide wafer bow
CN113053747A (en) * 2019-12-26 2021-06-29 株洲中车时代半导体有限公司 Method for improving warpage of SiC wafer and preparation method of SiC semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014144880A (en) * 2013-01-28 2014-08-14 Mitsubishi Electric Corp Production apparatus of single crystal, and production method of silicon carbide single crystal using the same
JP2015093806A (en) * 2013-11-12 2015-05-18 住友電気工業株式会社 Manufacturing apparatus and manufacturing method for silicon carbide substrate
JP2017226583A (en) * 2016-06-23 2017-12-28 トヨタ自動車株式会社 Production method for sic single crystal
CN112908839A (en) * 2019-12-03 2021-06-04 上海积塔半导体有限公司 Method for reducing silicon carbide wafer bow
CN113053747A (en) * 2019-12-26 2021-06-29 株洲中车时代半导体有限公司 Method for improving warpage of SiC wafer and preparation method of SiC semiconductor device

Also Published As

Publication number Publication date
WO2023101613A2 (en) 2023-06-08

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