WO2023093351A1

WO2023093351A1 - Film-forming device

Info

Publication number: WO2023093351A1
Application number: PCT/CN2022/125287
Authority: WO
Inventors: 张俊杰
Original assignee: 无锡先为科技有限公司
Priority date: 2021-11-24
Filing date: 2022-10-14
Publication date: 2023-06-01
Also published as: CN115838917A

Abstract

The present application relates to the related technical field of MOCVD apparatuses. Disclosed is a film-forming device, which is used for solving the problem of a poor temperature control effect caused by uneven temperature distribution on a top plate. The film-forming device provided in the present application is provided with a reaction cavity, and comprises a base, a cover assembly and a heating device, wherein the base is positioned at the bottom of the reaction cavity and is used for bearing a substrate; the cover assembly is positioned at the top of the reaction cavity and is arranged opposite the base; the heating device is used for heating the base; and the cover assembly comprises a top plate facing the reaction cavity, and a cooling plate assembly arranged adjacent to the top plate, wherein the top plate is provided with a heated surface facing the reaction cavity and a radiating surface facing the cooling plate assembly, and a circulation gap is formed between the radiating surface of the top plate and the cooling plate assembly, with the circulation gap having a plurality of different heights along the center of the top plate toward the edge of same, and the heights being gap distances between the radiating surface and the cooling plate assembly. The present application is used for improving the temperature uniformity of the top plate.

Description

Film forming device

technical field

The present application relates to the technical field related to MOCVD equipment, in particular to a film forming device.

Background technique

Metal Organic Chemical Vapor Deposition (MOCVD for short) uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth source materials. Vapor phase epitaxy is carried out on the surface to grow thin-layer single crystal materials of various III-V, II-VI compound semiconductors and their multiple solid solutions. Usually, the crystal growth in the MOCVD system is carried out in the film forming device under normal pressure or low pressure (10-100 Torr).

Among them, the film forming device is composed of a quartz tube and a graphite base. In order to grow compound semiconductor materials with uniform components, ultra-thin layers, and heterogeneous structures, various manufacturers and researchers have put a lot of effort into the design of the film-forming device structure, and have designed film-forming devices with different structures. The graphite base in the film forming device is made of high-purity graphite and wraps the SIC layer.

The bottom of the film-forming device is formed by a base, the top of the film-forming device is formed by a top plate, and a heating device is arranged below the base, and the heating device can heat the gas in the base and the film-forming device, so that the gas at the top of the film-forming device The temperature of the top plate rises. In order to avoid deformation of the top plate under high temperature, it is necessary to control the temperature of the top plate. Therefore, a cooling plate assembly is usually provided above the top plate for cooling the top plate.

However, in the prior art, the area on the top plate corresponding to the heating device has the highest temperature, and the temperature in the remaining areas is relatively low, that is, there is a temperature difference on the top plate along the center of the top plate to the edge of the top plate, thus causing The temperature distribution of the roof is uneven, and the temperature control effect of the roof is poor.

technical solution

The present application provides a film forming device to solve the problems of uneven temperature distribution and poor temperature control effect on the top plate.

In order to achieve the above purpose, on the one hand, the film forming device provided by the present application has at least one reaction chamber for forming a film on the surface of the substrate, the film forming device includes a base, a cover assembly and a heating device, and the base is located on the The bottom of the reaction chamber is used to carry at least one substrate; the cover assembly is located on the top of the reaction chamber and is opposite to the base; the heating device is used to heat the base; the cover assembly includes a The top plate of the reaction chamber and the cooling plate assembly arranged adjacent to the top plate, the top plate has a heated surface facing the reaction chamber and a heat dissipation surface facing the cooling plate assembly; the heat dissipation surface of the top plate A flow gap is formed between the cooling plate assembly, and the flow gap has a plurality of different heights along the center of the top plate to the edge of the top plate, and the height is the heat dissipation surface and the cooling plate. Gap distance between plate assemblies; comprising at least a first circumference around the center of said top plate, said flow gaps on said first circumference having different heights.

In some embodiments of the present application, the cooling plate assembly has a cooling surface facing the heat dissipation surface, the cooling surface is a plane; the heat dissipation surface of the top plate is an uneven surface, the The cover assembly at least includes an air inlet facing the heat dissipation surface for filling heat transfer gas into the circulation gap.

In some embodiments of the present application, a first annular area close to the center of the top plate is formed on the heat dissipation surface, and the top plate forms the communication between the first annular area and the cooling surface. The first gap of the gap; a plurality of rectifying blocks are arranged in the first annular area, and the plurality of rectifying blocks surround the center and are arranged at intervals.

In some embodiments of the present application, the first annular area includes an inner annular area, a middle annular area and an outer annular area distributed sequentially along the center of the top plate toward the edge of the top plate; the rectifying block is Radially arranged in the middle annular area; in the horizontal projection plane, the air inlet is located in the inner annular area.

In some embodiments of the present application, an air flow passage is formed between two adjacent rectifying blocks, the first circumference is located in the middle annular region, and the first circumference has different heights of the The flow gap includes the flow gap at the rectifying block and the flow gap at the airflow channel.

In some embodiments of the present application, airflow passages are formed between two adjacent rectifying blocks, and the distribution density of the airflow passages near the air inlet is smaller than that of the airflow passages away from the air inlet. distribution density.

In some embodiments of the present application, an airflow channel is formed between two adjacent rectifying blocks, and the width of the airflow channel in the circumferential direction of the first annular region is equal, and the height of a plurality of rectifying blocks is are less than the height of the first gap, the distance between the rectifying block and the cooling surface is smaller than the width of the airflow channel between two adjacent rectifying blocks, and the value of the height of the first gap is The range is: 3mm~6mm.

In some embodiments of the present application, the heat dissipation surface further includes a second annular area, a third annular area and a fourth annular area sequentially located radially outside the first annular area; the second annular area and A second gap forming the flow gap between the cooling surfaces; a third gap forming the flow gap between the third annular region and the cooling surface; a third gap forming the flow gap between the fourth annular region and the cooling surface A fourth gap forming the flow gap between them; wherein, the height of the second gap is less than the height of the first gap, the height of the third gap and the height of the fourth gap; the base There is a groove on the top, the groove is used to accommodate the substrate, and the direct heating area of the heating device at least partially covers the groove; in the horizontal projection plane, at least a part of the second annular region coincides with the groove.

In some embodiments of the present application, in the height direction of the flow gap, the center of the groove and the middle position of the second annular region in the radial direction are collinear; the height of the second gap The value range is: 0.1mm~0.5mm.

In some embodiments of the present application, in the horizontal projection plane, the base includes a first area covered by the direct heating area of the heating device and a second area located outside the first heating area, the first The three-ring area overlaps with the second area at least partially, and the height of the third gap ranges from 1.5 mm to 3 mm.

In some embodiments of the present application, the height of the fourth gap ranges from 2 mm to 5 mm.

Compared with the prior art, the film forming device in the present application sets the flow gap from the direction close to the center of the top plate to the direction away from the center of the top plate to have a structure with different gap heights, so that the cooling plate assembly The cooling effect of the top plate is adjusted, so that the temperature of different regions on the top plate can be controlled separately through different gap heights, so that the temperature field distribution on the top plate is relatively uniform, thereby improving the temperature control effect of the cooling plate assembly on the top plate.

In a second aspect, the present application also provides an MOCVD equipment, which includes the above-mentioned film forming device.

In addition, since the film-forming device in the MOCVD equipment provided by the present application has the same structure as the above-mentioned film-forming device, the MOCVD equipment provided in the present application can achieve the same technical effect as the above-mentioned film-forming device.

In a third aspect, the present application also provides a top plate used in a film forming device, the top plate has a heat receiving surface and a heat dissipation surface oppositely arranged; the heat dissipation surface is provided with a plurality of annular regions with different heights, The plurality of annular regions with different heights are distributed along the center of the top plate to the edge of the top plate.

In some embodiments of the present application, a first annular area, a second annular area, a third annular area and The fourth annular area; the height of the second annular area is greater than the height of the first annular area, the height of the third annular area and the height of the fourth annular area; the first annular area includes along The inner annular area, the middle annular area and the outer annular area are distributed sequentially from the center of the top plate to the edge of the top plate, and a plurality of rectifying blocks are arranged in the middle annular area, and the plurality of rectifying blocks surround radially The center of the top plate is arranged at intervals; the height of the rectifying block is smaller than the height of the second annular area. The heat-conducting gas that passes through the rectifying blocks is broken up so that when the heat-conducting gas downstream of the rectifying block flows through the above-mentioned one or more annular regions, it can be evenly distributed in the circumferential direction of the annular regions, so as to strengthen the top plate The improvement effect of the temperature uniformity.

The heat dissipation surface of the top plate in the present application is provided with a plurality of annular regions with different heights, and the plurality of annular regions with different heights are distributed along the center of the top plate to the edge of the top plate, and the above-mentioned top plate is applied to In the film forming device, it is possible to have a structure with different gap heights between the top plate and the cooling plate assembly in the film forming device, so that the cooling effect of the cooling plate assembly on the top plate can be adjusted, so that the temperature field distribution on the top plate is relatively uniform.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.

FIG. 1 is a structural schematic diagram of a longitudinal section of a film-forming device in the practice of the present application.

Fig. 2 is an enlarged view of part A in Fig. 1 .

FIG. 3 is a schematic perspective view of the top plate in the film forming device in the embodiment of the present application.

Fig. 4 is a temperature curve diagram of the susceptor in the embodiment of the present application.

Fig. 5 is a temperature curve diagram of the embodiment of the present application without an annular partition on the top plate and a temperature curve diagram of the embodiment of the present application after the annular partition structure is arranged on the top plate.

The main reference signs in the drawings of this application specification are explained as follows: 1-base; 100-substrate; 2-top plate; 20-through hole; 21-first annular area; 213-middle annular area; 214-outer annular area; 22-second annular area; 23-third annular area; 24-fourth annular area; 3-heating device; 4-cooling plate assembly; 40-air inlet ; 5-top cover; 6-air intake device; 7-rotary shaft.

Embodiments of the present invention

The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

In the description of this application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the application and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and therefore should not be construed as limiting the application.

The terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present application, unless otherwise specified, "plurality" means two or more.

In the description of this application, it should be noted that unless otherwise specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; can be mechanically connected, can be directly connected, can also be indirectly connected through an intermediary, and can be an internal communication between two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application in specific situations.

The present application provides a film forming device, and the above devices will be described in detail below. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments of the present application. And in the following embodiments, the description of each embodiment has its own focus, and for the part not described in detail in a certain embodiment, you can refer to the relevant descriptions of other embodiments.

Referring to FIGS. 1 to 3 , the film forming device provided by the present application has at least one reaction chamber for forming a film on the surface of a substrate 100. The film forming device includes a base 1, a cover assembly and a heating device 3. The base The base 1 is located at the bottom of the reaction chamber and is used to carry at least one substrate 100; the cover assembly is located on the top of the reaction chamber and is opposite to the base 1, and the heating device 3 can heat the base 1; the cover assembly includes a top plate 2 facing the reaction chamber and a cooling plate assembly 4 adjacent to the top plate 2, the top plate 2 has a heated surface facing the reaction chamber and a cooling surface facing the reaction chamber. The heat dissipation surface of the plate assembly 4; a flow gap is formed between the heat dissipation surface of the top plate 2 and the cooling plate assembly 4, and the flow gap is along the direction from the center of the top plate 2 to the edge of the top plate 2 There are several different heights, the height being the gap distance between the heat dissipation surface and the cooling plate assembly 4 . In one embodiment, the substrate 100 may be a wafer.

Compared with the prior art, the film forming device provided by the present application has a structure with different gap heights by setting the flow gap from the direction close to the center of the top plate 2 to the direction away from the center of the top plate 2, so that the cooling plate The cooling effect of the component 4 on the top plate 2 is adjusted, so that the temperature of different regions on the top plate 2 can be controlled separately through different gap heights, so that the temperature field distribution on the top plate 2 is relatively uniform, thereby improving the cooling effect of the cooling plate component 4. The temperature control effect of the top plate 2.

Usually, the above-mentioned film forming device has a cylindrical hollow reaction chamber, and correspondingly, the top plate 2 and the base 1 are circular plate-shaped structures. A rotating shaft 7 is connected to the middle position of the base 1, and the rotating shaft 7 is used to drive the base 1 to rotate around its axis, that is, the axis of the rotating shaft 7 is also the axis of the film forming device, the axis of the top plate 2 center.

It can be understood that the base 1 , the top plate 2 , and the cooling plate assembly 4 are arranged symmetrically with respect to the axis of the rotating shaft 7 . Wherein, the top plate 2 is made of graphite material.

The flow gap between the top plate 2 and the cooling plate assembly 4 and the structure of the top plate 2 will be described in more detail below.

In some embodiments of the present application, the cooling plate assembly 4 has a cooling surface facing the heat dissipation surface, the cooling surface is a plane; the heat dissipation surface of the top plate 2 is an uneven surface, The cover assembly at least includes an air inlet 40 facing the heat dissipation surface; that is, the application adjusts the flow gap between the top plate 2 and the cooling plate assembly 4 by adjusting the structure of the heat dissipation surface of the top plate 2 to ensure the flow gap The adjustment method is easy to realize.

Based on the above embodiment, a first annular area 21 close to the center of the top plate 2 is formed on the heat dissipation surface, and the top plate 2 forms the circulation between the first annular area 21 and the cooling surface. The first gap of the gap; a plurality of rectifying blocks 211 are arranged in the first annular area 21, and a plurality of rectifying blocks 211 are arranged at intervals around the center, and the first annular area 21 is loaded by the rectifying blocks 211 The air flow is relatively uniform.

Based on the above embodiment, the first annular area 21 includes an inner annular area 212, a middle annular area 213 and an outer annular area 214 distributed sequentially along the center of the top plate 2 toward the edge of the top plate; a plurality of rectifying blocks 211 is arranged radially in the middle annular area 213 , and in the horizontal projection plane, the air inlet 40 is located in the inner annular area 212 , as shown in FIG. 2 .

It can be understood that the air inlet 40 of the cover assembly is used to discharge the lower-temperature carrier gas cooled by the cooling plate assembly 4, and the air inlet 40 is generally two hole-shaped structures, that is, the carrier gas enters the above-mentioned After passing through the gap, the airflow velocity of the carrier gas near the air inlet 40 is relatively high, and the airflow velocity of the carrier gas far away from the air inlet 40 is relatively small. Therefore, the present application sets the air inlet 40 in the inner annular region 212 inside, so that the first annular region 21 forms an inner annular cavity in the inner annular region 212, that is, when the carrier gas first enters the inner annular cavity through the gas inlet 40, gas dispersion will occur, and then the carrier gas will flow through the above phase Adjacent to the space between the two rectifying blocks 211, that is, through the rectifying block 211, the above-mentioned carrier gas has the effect of splitting and rectifying. Gas dispersion occurs again in the outer annular cavity to improve the uniformity of the carrier gas in the first annular region 21 .

At the same time, since the airflow velocity of the carrier gas near the air inlet 40 is relatively high, and the airflow velocity of the carrier gas far away from the air inlet 40 is relatively small, therefore, in the embodiment of the present application, between two adjacent rectifying blocks 211 Airflow passages are formed between them, and the distribution density of the airflow passages near the air inlet 40 is smaller than the distribution density of the airflow passages away from the air inlet 40, as shown in Figure 3, that is, near the air inlet 40 The number of airflow passages at the location is less, and similarly, the number of airflow passages away from the air inlet 40 is larger, so that the gas discharged through the air inlet 40 can better flow to the area away from the air inlet 40, so as to Further improve the uniformity of carrier gas flow.

It can be understood that the distribution density of the above-mentioned rectifying blocks 211 can be controlled according to the size of the rectifying blocks 211 in the circumferential direction, that is, the rectifying blocks near the air inlet 40 have a slightly larger size in the circumferential direction, The size of the rectifying block at the air port 40 in the circumferential direction is slightly smaller.

Based on the above embodiment, an airflow channel is formed between two adjacent rectifying blocks 211, and the width of the airflow channel in the circumferential direction of the first annular region 21 is equal, so that the distribution density of the airflow channels is easy to control , and the processing method of the airflow channel is relatively simple and convenient.

In addition, the width of the airflow channel between every two adjacent rectifying blocks 211 is equal everywhere in the radial direction, that is, the rectifying block 211 can be cut by a turning tool on the protruding ring protruding from the first annular region 21. The through grooves in the radial direction are formed, and the width of the air flow channel is equal to the cutting width of the turning tool, so that the machining process of the air flow channel between adjacent rectifying blocks 211 is easier to realize.

Continuing to refer to FIG. 2 and FIG. 3 , the heights of the plurality of rectifying blocks 211 are all smaller than the height of the first gap in the first annular region 21 , and between the rectifying blocks 211 and the cooling surface of the cooling plate assembly 4 The distance is less than the width of the airflow passage between two adjacent rectification blocks 211, that is, there is a gap between the rectification block 211 and the cooling surface of the cooling plate assembly 4, and the distance of the gap is less than the width of the airflow passage, through The gap and the gas flow channel can further improve the uniformity of the flow of the carrier gas.

Wherein, the value range of the height of the first gap is: 3mm~6mm, so that on the basis of ensuring the thermal conductivity of the first annular region 21, the uniformity of the rectifying plate to the carrier gas can also be ensured.

It can be understood that the above-mentioned top plate 2 is formed by nesting four ring-shaped parts, the axes of the four ring-shaped parts coincide with each other, and the size of each ring-shaped part in the radial direction is not the same, and each The gap formed between the ring member and the cooling plate assembly 4 is also different.

Hereinafter, the structure of other annular regions of the top plate 2 will be described in detail.

In some embodiments of the present application, the temperature of the region where the groove is located on the base 1 is usually the highest, thus the temperature of the region (second annular region 22 ) opposite to the groove on the top plate 2 is the highest, in order to ensure that the top plate 2 The temperature distribution in each area is more uniform, that is, when the carrier gas passes through this area, the heat that needs to be taken away is the most. Therefore, the heat dissipation surface in this application also includes a second annular ring that is sequentially located on the radially outer side of the first annular area 21. Area 22, the third annular area 23 and the fourth annular area 24, the second gap of the flow gap is formed between the second annular area 22 and the cooling surface; the third annular area 23 and the cooling surface A third gap of the flow gap is formed between the surfaces; a fourth gap of the flow gap is formed between the fourth annular region 24 and the cooling surface; wherein, the height of the second gap is smaller than that of the first gap. The height of the first gap, the height of the third gap and the height of the fourth gap, the base 1 is provided with a groove, the groove is used to accommodate the substrate 100, the heating device The direct heating area of 3 at least partly covers the groove, and in the horizontal projection plane, at least a part of the second annular region 22 coincides with the groove.

Since the second gap height of the top plate 2 between the second annular region 22 and the cooling plate assembly 4 is the smallest, the flow velocity of the carrier gas and the thermal conductivity of the second annular region 22 are increased, so that the carrier gas passes through the first More heat is taken away in the second annular region 22 , and the heat dissipation efficiency of the top plate 2 in the second annular region 22 is higher.

Based on the above-mentioned embodiment, in order to further improve the uniformity of the temperature distribution on the top plate 2 and the heat dissipation efficiency of the top plate 2 in the second annular area 22, the base 1 is provided with grooves for accommodating the For the substrate 100, the direct heating area of the heating device 3 at least partially covers the groove; in the horizontal projection plane, at least a part of the second annular area coincides with the groove.

Wherein, in the height direction of the flow gap, the center of the groove and the middle position of the second annular region 22 in the radial direction are collinear, and the value range of the height of the second gap is: 0.1mm~0.5mm, to better ensure the heat dissipation efficiency of the top plate 2 in the second annular region 22 .

Based on the above-mentioned embodiment, in the horizontal projection plane, the base 1 includes a first area covered by the direct heating area of the heating device 3 and a second area located outside the first heating area, the third annular The region 23 at least partially overlaps with the second region, and the height of the third gap ranges from 1.5 mm to 3 mm.

Experiments have shown that the second annular region 22 of the top plate 2 (that is, the region on the top plate 2 corresponding to the heating device 3 below the base 1) has the highest temperature, and the temperature of the top plate 2 on the radially outer side of the second annular region 22 is the same as that of the second annular region 22. The temperature of the second annular area 22 will have large fluctuations, therefore, the present application sets the third annular area 23 on the radially outer side of the second annular area 22, thereby enabling the heat conduction between the top plate 2 and the cooling plate assembly 4 The rate is more in line with the working conditions of the top plate 2.

In some embodiments of the present application, since the third annular area 23 is adjacent to the second annular area 22, it is located on the radially outer side of the heating area on the base 1, that is, the temperature of the top plate 2 in the third annular area 23 is slightly lower than that of the top plate 2. At the temperature of the second annular region 22, the carrier gas does not need a high thermal conductivity when flowing through the third annular region 23, so that the range of the height of the third gap is 1.5mm~3mm, thereby ensuring The temperature of the top plate 2 in the third annular region 23 and the temperature of the top plate 2 in the second annular region 22 are closer.

Similarly, the range of the height of the fourth gap is: 2mm~5mm.

That is, the height of the first gap of the top plate 2 in the first annular region 21 is the highest, one, due to the lowest temperature when it enters the first annular region 21; The heating device 3 under the seat 1 is arranged oppositely, so the height of the first gap is the highest, so as to ensure that the thermal conductivity of the first annular region 21 in the top plate 2 is relatively suitable.

Referring to Fig. 4 and Fig. 5, Fig. 4 is the temperature graph corresponding to different regions on the base 1 in the embodiment of the present application, and Fig. 5 is the temperature graph corresponding to different regions on the top plate 2 in the embodiment of the present application, wherein, the B curve It is the temperature graph on the top plate 2 when the annular partition structure is not set on the top plate 2, and the B' curve is the temperature graph of different annular regions on the top plate 2 after the above-mentioned annular partition structure is set on the top plate 2.

Wherein, R1 represents the radius range of the first annular area 21, R2 represents the radius range of the second annular area 22, R3 represents the radius range of the third annular area 23, and R4 represents the fourth annular area 24 radius range.

It can be known from this that if the base 1 is heated by the heating device 3, the temperature on the base 1 close to the heating device 3 and the temperature away from the heating device 3 are different, and a radially uneven temperature field will be formed on the base 1, that is, on the top plate 2 Corresponding to the uneven temperature field on the base 1, a radially uneven temperature field will also be formed. After using the top plate 2 with the above-mentioned structure of the application, that is, the side surface of the top plate 2 close to the cooling plate assembly 4 has a stepped surface structure, that is By controlling the gap between the top plate 2 and the cooling plate assembly 4, the temperatures of different regions on the top plate 2 are controlled respectively, so that the temperature distribution on the top plate 2 is relatively uniform.

It should be noted that a through hole 20 is also formed on the radial inner side of the first annular region 21 of the top plate 2, and another through hole corresponding to the through hole 20 is formed on the cooling plate assembly 4. An air inlet device 6 is installed at the place for gas to enter the reaction chamber to stimulate or promote chemical reactions for supplying energy such as heat, plasma, light, etc., so as to synthesize a thin film and adsorb and deposit it on the substrate 100 .

Wherein, the above-mentioned film forming device further includes an upper cover 5 , wherein the top plate 2 and the cooling plate assembly 4 are both fixedly installed on the upper cover 5 .

Furthermore, the present application also provides an MOCVD equipment, which includes the above-mentioned film forming device.

Since the film-forming device in the MOCVD equipment provided by the present application has the same structure as the above-mentioned film-forming device, the MOCVD equipment provided in the present application can achieve the same technical effect as the above-mentioned film-forming device.

In addition, the present application also provides a top plate 2, which is applied in the above-mentioned film forming device, the top plate 2 has a heat receiving surface and a heat dissipation surface oppositely arranged; the heat dissipation surface is provided with a plurality of annular regions with different heights, The plurality of annular regions with different heights are distributed along the center of the top board 2 to the edge of the top board 2 .

Wherein, a first annular area 21 , a second annular area 22 , a third annular area 23 and a fourth annular area 23 are arranged in sequence along the center of the top plate 2 toward the edge of the top plate 2 on the heat dissipation surface. Annular area 24; the height of the second annular area 22 is greater than the height of the first annular area 21, the height of the third annular area 23 and the height of the fourth annular area 24; the first annular area 21 includes an inner annular area 212, a middle annular area 213 and an outer annular area 214 distributed sequentially along the center of the top plate 2 toward the edge of the top plate 2, and a plurality of rectifying blocks 211 are arranged in the middle annular area 213 A plurality of rectifying blocks 211 are arranged radially around the center of the top plate 2 at intervals; the height of the rectifying blocks 211 is smaller than the height of the second annular region 22 .

It should be noted that the plurality of rectifying blocks 211 are not uniformly distributed, thus during specific installation, the position where the distribution density of the rectifying blocks 211 is small can be set close to the air inlet 40 of the cover assembly in the film forming device, and the The position where the distribution density of the rectifying blocks 211 is relatively high may be set away from the air inlet 40 of the cover assembly in the film forming device.

In the description of this specification, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.

The above is only a specific implementation of the application, but the scope of protection of the application is not limited thereto. Anyone familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the application. Should be covered within the protection scope of this application. Therefore, the protection scope of the present application should be determined by the protection scope of the claims. In addition, specific examples are used in the description to illustrate the principles and implementation methods of the present application. The descriptions of the above examples are only used to help understand the method and core idea of the present application, and the contents of this description should not be construed as limiting the application .

Claims

A film-forming device having at least one reaction chamber for film-forming on a substrate surface, characterized in that the film-forming device comprises:

a base, located at the bottom of the reaction chamber, for carrying at least one substrate;

a cover assembly, located on the top of the reaction chamber and opposite to the base;

a heating device for heating the base;

The cover assembly includes a top plate facing the reaction chamber and a cooling plate assembly adjacent to the top plate, the top plate has a heated surface facing the reaction chamber and a heat dissipation surface facing the cooling plate assembly; A flow gap is formed between the heat dissipation surface of the top plate and the cooling plate assembly, and the flow gap has a plurality of different heights along the center of the top plate to the edge of the top plate, and the heights are a gap distance between the heat dissipation surface and the cooling plate assembly;

At least one first circumference around the center of the top plate is included, the flow gaps on the first circumference have different heights.
The film forming device according to claim 1, wherein the cooling plate assembly has a cooling surface facing the heat dissipation surface, and the cooling surface is a plane;

The heat dissipation surface of the top plate is an uneven surface, and the cover assembly at least includes an air inlet facing the heat dissipation surface, so as to fill the flow gap with heat conducting gas.
The film forming device according to claim 2, wherein a first annular area close to the center of the top plate is formed on the heat dissipation surface, and the top plate is between the first annular area and the cooling surface. forming a first gap between said flow gaps;

A plurality of rectifying blocks are arranged in the first annular area, and the plurality of rectifying blocks surround the center and are arranged at intervals.
The film forming device according to claim 3, wherein the first annular area includes an inner annular area, a middle annular area and an outer annular area distributed sequentially along the center of the top plate toward the edge of the top plate ;

The rectifying blocks are arranged radially in the middle annular area;

In the horizontal projection plane, the air inlet is located in the inner annular area.
The film-forming device according to claim 4, wherein an air flow channel is formed between two adjacent rectifying blocks, the first circumference is located in the middle annular region, and on the first circumference The flow gaps having different heights include a flow gap at the rectifying block and a flow gap at the airflow channel.
The film forming device according to claim 4, wherein an air flow channel is formed between two adjacent rectifying blocks, and the distribution density of the air flow channel near the air inlet is smaller than that of the air flow channel far away from the air inlet. The distribution density at the inlet.
The film forming device according to claim 3, characterized in that, an airflow channel is formed between two adjacent rectifying blocks, and the width of the airflow channel in the circumferential direction of the first annular region is equal, and a plurality of The heights of the rectifying blocks are all smaller than the height of the first gap, the distance between the rectifying blocks and the cooling surface is smaller than the width of the airflow channel between two adjacent rectifying blocks, and the first The value range of the height of the gap is: 3mm~6mm.
The film forming device according to any one of claims 3 to 7, wherein the heat dissipation surface further comprises a second annular area, a third annular area and a The fourth ring area;

a second gap forming the flow gap between the second annular region and the cooling surface;

a third gap forming the flow gap between the third annular region and the cooling surface;

a fourth gap forming the flow gap between the fourth annular region and the cooling surface;

Wherein, the height of the second gap is smaller than the height of the first gap, the height of the third gap and the height of the fourth gap;

A groove is provided on the base, the groove is used to accommodate the substrate, and the direct heating area of the heating device at least partially covers the groove;

In a horizontal projection plane, at least a part of the second annular area coincides with the groove.
The film forming device according to claim 8, characterized in that, in the height direction of the flow gap, the center of the groove and the middle position of the second annular region in the radial direction are collinear, so The value range of the height of the second gap is: 0.1mm~0.5mm.
The film forming device according to claim 8, wherein, in the horizontal projection plane, the base includes a first area covered by the direct heating area of the heating device and a second area outside the first heating area. In the second area, the third annular area at least partially overlaps with the second area, and the range of the height of the third gap is: 1.5mm~3mm.
The film forming device according to claim 9, wherein the value range of the height of the fourth gap is: 2mm~5mm.