WO2023093249A1 - Bidirectional tvs device having symmetrical breakdown voltages - Google Patents

Bidirectional tvs device having symmetrical breakdown voltages Download PDF

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WO2023093249A1
WO2023093249A1 PCT/CN2022/120396 CN2022120396W WO2023093249A1 WO 2023093249 A1 WO2023093249 A1 WO 2023093249A1 CN 2022120396 W CN2022120396 W CN 2022120396W WO 2023093249 A1 WO2023093249 A1 WO 2023093249A1
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well
type
tvs device
bidirectional tvs
breakdown voltage
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French (fr)
Chinese (zh)
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王涛
黄龙
彭时秋
肖步文
贺琪
张世权
张继
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无锡中微晶园电子有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

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  • the invention relates to the technical field of ESD protection devices, in particular to a bidirectional TVS device with symmetrical breakdown voltage.
  • TVS is a semiconductor device used for voltage transient, surge current and ESD protection.
  • TVS has the characteristics of fast response, strong surge capacity, and small area. It is widely used in various electronic products to improve product quality. safety and reliability.
  • TVS devices can be divided into unidirectional and bidirectional products.
  • Bidirectional TVS has a greater market advantage because it can provide protection in both forward and reverse directions at the same time.
  • bidirectional TVS positive and negative The symmetry of the breakdown voltage in the two directions is difficult to adjust consistently.
  • the purpose of the present invention is to provide a bidirectional TVS device with symmetrical breakdown voltage, so as to solve the problem that it is difficult to adjust the symmetry of the breakdown voltage in the forward and reverse directions of the bidirectional TVS in the current design.
  • the present invention provides a bidirectional TVS device with symmetrical breakdown voltage, including an N-type substrate, an N-type buried layer, a P-type epitaxial layer, a deep trench, a P well, and an N+ region;
  • the N-type buried layer is located on the N-type substrate, and the P-type epitaxial layer is located on the N-type buried layer,
  • the P well and the N+ region are located in the P-type epitaxial layer, and the deep trench runs through the P-type epitaxial layer, the N-type buried layer and the N-type substrate;
  • N+ regions which are respectively located on both sides of the P well and have the same distance from the P well;
  • the N+ region leads out as the positive pole of the bidirectional TVS device, and the P-type substrate serves as the negative pole of the bidirectional TVS device.
  • the distance D1 between the N+ region and the P well is controlled by the layout size of the N+ region and the P well; the distance D1 is used to adjust the forward breakdown voltage, and its range is 0 -5 microns.
  • the distance D2 between the P well and the N-type buried layer is controlled by the depth of the P well and the thickness of the P-type epitaxial layer; the distance D2 is used to adjust the reverse breakdown Voltage, which ranges from 0-5 microns.
  • the deep trench passes through the N-type buried layer to reduce leakage current parameters.
  • the layouts of the N+ region and the P well are strip-shaped interfinger structures.
  • the doping concentration of the P well is higher than that of the P-type epitaxial layer.
  • the bidirectional TVS device with symmetrical breakdown voltage includes an N-type substrate, an N-type buried layer, a P-type epitaxial layer, a deep trench, a P well, and an N+ region; the N-type buried layer is located in the On an N-type substrate, the P-type epitaxial layer is located on the N-type buried layer, the P well and the N+ region are located in the P-type epitaxial layer, and the deep trench runs through the P-type epitaxial layer.
  • the invention can realize the effective control of the forward and reverse breakdown voltages by adjusting the layout size, the thickness of the epitaxial layer and the concentration of the P well, and realize the consistency of the forward and reverse breakdown voltages.
  • Fig. 1 is a schematic cross-sectional view of a bidirectional TVS device with a symmetrical breakdown voltage provided by the present invention
  • FIG. 2 is a schematic diagram of a forward breakdown circuit of a bidirectional TVS device with a symmetrical breakdown voltage provided by the present invention
  • Fig. 3 is a schematic diagram of a reverse breakdown circuit of a bidirectional TVS device with a symmetrical breakdown voltage provided by the present invention.
  • Fig. 1 shows a schematic cross-sectional structure of a bidirectional TVS with symmetrical breakdown voltage according to the present invention, including N-type substrate, N-type buried layer, P-type epitaxial layer, deep trench, P well and N+ region.
  • the N-type buried layer (NB) is formed on the N-type substrate by implantation and high-temperature annealing process;
  • the P-type epitaxial layer is formed on the N-type buried layer by an epitaxial process; defined in the photolithographic layout
  • the position and size of the P well, the P well is grown by implantation and high-temperature annealing process;
  • the position and size of the N+ region are defined in the photolithography layout, and the N+ region is grown by implantation and high-temperature annealing process;
  • the deep trench is passed through Manufactured by a deep silicon groove process, the N+ region is led out as the positive pole of the bidirectional TVS device, and the P-type substrate is used as the negative pole
  • FIG. 2 it is the equivalent circuit diagram of the forward operation of the bidirectional TVS device.
  • the N+ region, the P-type epitaxial layer, the P well, and the N-type buried layer and the N-type substrate form an NPN triode structure, wherein the N+ region is equivalent to the emitter of the triode, the P-type epitaxial layer and the P well are equivalent to the base of the triode, and the N-type buried layer
  • the N-type substrate is equivalent to the collector of a triode
  • the breakdown voltage of the bidirectional TVS device is determined by the breakdown voltage of the emitter and base of the equivalent triode, that is, by the N+ region and the P-type epitaxial layer and the P well, by adjusting the doping concentration of the P well and the distance D1 between the P well and the N+ region, the breakdown voltage of the emitter and the base can be effectively adjusted, that is, the positive voltage of the device can be adjusted. to the breakdown voltage.
  • FIG. 3 it is the equivalent circuit diagram of the reverse operation of the bidirectional TVS device.
  • the N-type substrate and the N-type buried layer, the P-type epitaxial layer and the The P well and the N+ region form an NPN triode structure, wherein the N-type substrate and the N-type buried layer are equivalent to the emitter of the triode, and the P-type epitaxial layer and the P well are equivalent to the triode
  • the base, the N+ region is equivalent to the collector of the triode
  • the breakdown voltage of the bidirectional TVS device is determined by the breakdown voltage of the emitter and the base of the equivalent triode, that is, by the N-type buried layer and the P
  • the N-type epitaxial layer and the P well are determined by adjusting the doping concentration of the N-type buried layer and the thickness of the P-type epitaxial layer (that is, the distance D2 between the N-type buried layer and the P well), It can effectively adjust the breakdown voltage of the emitter and the base
  • the forward breakdown voltage is controlled by the concentration of the P well and the distance D1 (layout structure) between the P well and the N-type buried layer
  • the reverse breakdown voltage is controlled by the concentration of the N-type buried layer and
  • the distance D2 (epitaxy thickness) between the P well and the N-type buried layer is controlled, and the forward and reverse breakdown voltages are adjustable and controllable, and a TVS device with symmetrical forward and reverse breakdown voltages is realized.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

A bidirectional TVS device having symmetrical breakdown voltages, relating to the field of ESD protection devices, and comprising an N-type substrate, an N-type buried layer, a P-type epitaxial layer, a deep trench, a P well, and N+ regions. The N-type buried layer is located on the N-type substrate, the P-type epitaxial layer is located on the N-type buried layer, the P well and the N+ regions are located in the P-type epitaxial layer, and the deep trench runs through the P-type epitaxial layer, the N-type buried layer, and the N-type substrate; there are two N+ regions, which are respectively located on two sides of the P well and are equal in distance from the P well; the N+ regions are led out to serve as a positive electrode of the bidirectional TVS device, and the N-type substrate serves as a negative electrode of the bidirectional TVS device. The forward and reverse breakdown voltages can be effectively regulated and controlled by adjusting the layout size, the thickness of the epitaxial layer, and the concentration of the P well, so that the forward and reverse breakdown voltages are consistent.

Description

一种击穿电压对称的双向TVS器件A Bidirectional TVS Device with Symmetrical Breakdown Voltage 技术领域technical field
本发明涉及ESD防护器件技术领域，特别涉及一种击穿电压对称的双向TVS器件。The invention relates to the technical field of ESD protection devices, in particular to a bidirectional TVS device with symmetrical breakdown voltage.
背景技术Background technique
TVS是一种用于电压瞬变、浪涌电流及ESD防护的半导体器件，TVS具有响应速度快、浪涌能力强、面积小等特点，被广泛的应用在各类电子产品中，以提高产品的安全性和可靠性。TVS器件可分为单向和双向两类产品，双向TVS因同时能够提供正、反两个方向的防护而具有更大的市场优势，然而，在实际设计及应用过程中，双向TVS正、反两个方向的击穿电压对称性较难调整一致。TVS is a semiconductor device used for voltage transient, surge current and ESD protection. TVS has the characteristics of fast response, strong surge capacity, and small area. It is widely used in various electronic products to improve product quality. safety and reliability. TVS devices can be divided into unidirectional and bidirectional products. Bidirectional TVS has a greater market advantage because it can provide protection in both forward and reverse directions at the same time. However, in the actual design and application process, bidirectional TVS positive and negative The symmetry of the breakdown voltage in the two directions is difficult to adjust consistently.
发明内容Contents of the invention
本发明的目的在于提供一种击穿电压对称的双向TVS器件，以解决目前设计中双向TVS正、反两个方向的击穿电压对称性较难调整一致的问题。The purpose of the present invention is to provide a bidirectional TVS device with symmetrical breakdown voltage, so as to solve the problem that it is difficult to adjust the symmetry of the breakdown voltage in the forward and reverse directions of the bidirectional TVS in the current design.
为解决上述技术问题，本发明提供了一种击穿电压对称的双向TVS器件，包括N型衬底、N型埋层、P型外延层、深沟槽、P阱和N+区域；In order to solve the above technical problems, the present invention provides a bidirectional TVS device with symmetrical breakdown voltage, including an N-type substrate, an N-type buried layer, a P-type epitaxial layer, a deep trench, a P well, and an N+ region;
所述N型埋层位于所述N型衬底上，所述P型外延层位于所述N型埋层上，The N-type buried layer is located on the N-type substrate, and the P-type epitaxial layer is located on the N-type buried layer,
所述P阱和所述N+区域位于所述P型外延层中，所述深沟槽贯穿所述P型外延层、所述N型埋层和所述N型衬底；The P well and the N+ region are located in the P-type epitaxial layer, and the deep trench runs through the P-type epitaxial layer, the N-type buried layer and the N-type substrate;
所述N+区域为两个，分别位于所述P阱的两侧且距离所述P阱的距离相等；There are two N+ regions, which are respectively located on both sides of the P well and have the same distance from the P well;
所述N+区域引出作为该双向TVS器件的正极，所述P型衬底作为该双向TVS器件的负极。The N+ region leads out as the positive pole of the bidirectional TVS device, and the P-type substrate serves as the negative pole of the bidirectional TVS device.
可选的，所述N+区域与所述P阱之间的距离D1由所述N+区域与所述P阱的版图尺寸控制；所述距离D1用于调节正向击穿电压，其范围为0-5微米。Optionally, the distance D1 between the N+ region and the P well is controlled by the layout size of the N+ region and the P well; the distance D1 is used to adjust the forward breakdown voltage, and its range is 0 -5 microns.
可选的，所述P阱与所述N型埋层之间的距离D2由所述P阱的深度和所述P型外延层的厚度尺寸控制；所述距离D2用于调节反向击穿电压，其范围为0-5微米。Optionally, the distance D2 between the P well and the N-type buried layer is controlled by the depth of the P well and the thickness of the P-type epitaxial layer; the distance D2 is used to adjust the reverse breakdown Voltage, which ranges from 0-5 microns.
可选的，所述深沟槽穿过所述N型埋层，以降低漏电流参数。Optionally, the deep trench passes through the N-type buried layer to reduce leakage current parameters.
可选的，所述N+区域和所述P阱的版图均为条状插指结构。Optionally, the layouts of the N+ region and the P well are strip-shaped interfinger structures.
可选的，所述P阱的掺杂浓度高于所述P型外延层的掺杂浓度。Optionally, the doping concentration of the P well is higher than that of the P-type epitaxial layer.
在本发明提供的击穿电压对称的双向TVS器件中，包括N型衬底、N型埋层、P型外延层、深沟槽、P阱和N+区域；所述N型埋层位于所述N型衬底上，所述P型外延层位于所述N型埋层上，所述P阱和所述N+区域位于所述P型外延层中，所述深沟槽贯穿所述P型外延层、所述N型埋层和所述N型衬底；所述N+区域为两个，分别位于所述P阱的两侧且距离所述P阱的距离相等；所述N+区域引出作为该双向TVS器件的正极，所述P型衬底作为该双向TVS器件的负极。本发明能够通过调整版图尺寸、外延层厚度以及P阱的浓度，实现对正、反向击穿电压的有效调控，实现正、反向击穿电压一致。In the bidirectional TVS device with symmetrical breakdown voltage provided by the present invention, it includes an N-type substrate, an N-type buried layer, a P-type epitaxial layer, a deep trench, a P well, and an N+ region; the N-type buried layer is located in the On an N-type substrate, the P-type epitaxial layer is located on the N-type buried layer, the P well and the N+ region are located in the P-type epitaxial layer, and the deep trench runs through the P-type epitaxial layer. layer, the N-type buried layer, and the N-type substrate; there are two N+ regions, which are respectively located on both sides of the P well and are at the same distance from the P well; the N+ regions lead out as the The positive pole of the bidirectional TVS device, and the P-type substrate is used as the negative pole of the bidirectional TVS device. The invention can realize the effective control of the forward and reverse breakdown voltages by adjusting the layout size, the thickness of the epitaxial layer and the concentration of the P well, and realize the consistency of the forward and reverse breakdown voltages.
附图说明Description of drawings
图1是本发明提供的击穿电压对称的双向TVS器件的剖面示意图；Fig. 1 is a schematic cross-sectional view of a bidirectional TVS device with a symmetrical breakdown voltage provided by the present invention;
图2是本发明提供的击穿电压对称的双向TVS器件正向击穿电路示意图；2 is a schematic diagram of a forward breakdown circuit of a bidirectional TVS device with a symmetrical breakdown voltage provided by the present invention;
图3是本发明提供的击穿电压对称的双向TVS器件反向击穿电路示意图。Fig. 3 is a schematic diagram of a reverse breakdown circuit of a bidirectional TVS device with a symmetrical breakdown voltage provided by the present invention.
具体实施方式Detailed ways
以下结合附图和具体实施例对本发明提出的一种击穿电压对称的双向TVS器件作进一步详细说明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。A bidirectional TVS device with a symmetrical breakdown voltage proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
实施例一Embodiment one
图1示出了根据本发明提供的一种击穿电压对称的双向TVS的剖面结构示意图，包括N型衬底、N型埋层、P型外延层、深沟槽、P阱和N+区域。所述N型埋层(NB)通过注入和高温退火工艺在所述N型衬底上形成；所述P型外延层通过外延加工工艺在所述N型埋层上形成；在光刻版图定义P阱位置和尺寸，通过注入和高温退火工艺生长出所述P阱；在光刻版图定义N+区域的位置和尺寸，通过注入和高温退火工艺生长出所述N+区域；所述深沟槽通过深硅槽工艺制作而成，所述N+区域引出作为该双向TVS器件的正极，所述P型衬底作为该双向TVS器件的负极。Fig. 1 shows a schematic cross-sectional structure of a bidirectional TVS with symmetrical breakdown voltage according to the present invention, including N-type substrate, N-type buried layer, P-type epitaxial layer, deep trench, P well and N+ region. The N-type buried layer (NB) is formed on the N-type substrate by implantation and high-temperature annealing process; the P-type epitaxial layer is formed on the N-type buried layer by an epitaxial process; defined in the photolithographic layout The position and size of the P well, the P well is grown by implantation and high-temperature annealing process; the position and size of the N+ region are defined in the photolithography layout, and the N+ region is grown by implantation and high-temperature annealing process; the deep trench is passed through Manufactured by a deep silicon groove process, the N+ region is led out as the positive pole of the bidirectional TVS device, and the P-type substrate is used as the negative pole of the bidirectional TVS device.
如图2所示为所述双向TVS器件正向工作的等效电路图，当电压施加在正极时，由所述N+区域、所述P型外延层和所述P阱、所述N型埋层和所述N型衬底构成NPN三极管结构，其中所述N+区域等效为三极管的发射极，所述P型外延层和所述P阱等效为三极管的基极，所述N型埋层和所述N型衬底等效为三极管的集电极，其双向TVS器件的击穿电压由等效三极管的发射极与基极击穿电压决定，即由所述N+区域和所述P型外延层和所述P阱决定，通过调整所述P阱的掺杂浓度以及所述P阱和所述N+区域之间距离D1，可有效调节发射极与基极击穿电压，即调节器件的正向击穿电压。As shown in Figure 2, it is the equivalent circuit diagram of the forward operation of the bidirectional TVS device. When the voltage is applied to the positive pole, the N+ region, the P-type epitaxial layer, the P well, and the N-type buried layer and the N-type substrate form an NPN triode structure, wherein the N+ region is equivalent to the emitter of the triode, the P-type epitaxial layer and the P well are equivalent to the base of the triode, and the N-type buried layer The N-type substrate is equivalent to the collector of a triode, and the breakdown voltage of the bidirectional TVS device is determined by the breakdown voltage of the emitter and base of the equivalent triode, that is, by the N+ region and the P-type epitaxial layer and the P well, by adjusting the doping concentration of the P well and the distance D1 between the P well and the N+ region, the breakdown voltage of the emitter and the base can be effectively adjusted, that is, the positive voltage of the device can be adjusted. to the breakdown voltage.
如图3所示为所述双向TVS器件反向工作的等效电路图，当电压施加在负极时，由所述N型衬底和所述N型埋层、所述P型外延层和所述P阱、所述N+区域构成NPN三极管结构，其中所述N型衬底和所述N型埋层等效为三极管的发射极，所述P型外延层和所述P阱等效为三极管的基极，所述N+区域等效为三极管的集电极，其双向TVS器件的击穿电压由等效三极管的发射极与基极击穿电压决定，即由所述N型埋层和所述P型外延层和所述P阱决定，通过调整所述N型埋层的掺杂浓度以及所述P型外延层的厚度(即所述N型埋层和所述P阱之间距离D2)，可有效调节发射极与基极击穿电压，即调节器件的反向击穿电压。As shown in Figure 3, it is the equivalent circuit diagram of the reverse operation of the bidirectional TVS device. When the voltage is applied to the negative pole, the N-type substrate and the N-type buried layer, the P-type epitaxial layer and the The P well and the N+ region form an NPN triode structure, wherein the N-type substrate and the N-type buried layer are equivalent to the emitter of the triode, and the P-type epitaxial layer and the P well are equivalent to the triode The base, the N+ region is equivalent to the collector of the triode, and the breakdown voltage of the bidirectional TVS device is determined by the breakdown voltage of the emitter and the base of the equivalent triode, that is, by the N-type buried layer and the P The N-type epitaxial layer and the P well are determined by adjusting the doping concentration of the N-type buried layer and the thickness of the P-type epitaxial layer (that is, the distance D2 between the N-type buried layer and the P well), It can effectively adjust the breakdown voltage of the emitter and the base, that is, adjust the reverse breakdown voltage of the device.
在本实施例中，正向击穿电压是由P阱的浓度以及P阱和N型埋层之间的距离D1(版图结构)控制，反向击穿电压是由N型埋层的浓度以及P阱和N型埋层间的距离D2(外延厚度)控制，实现了正、反向击穿电压可调、可控，实现正、反向击穿电压对称的TVS器件。In this embodiment, the forward breakdown voltage is controlled by the concentration of the P well and the distance D1 (layout structure) between the P well and the N-type buried layer, and the reverse breakdown voltage is controlled by the concentration of the N-type buried layer and The distance D2 (epitaxy thickness) between the P well and the N-type buried layer is controlled, and the forward and reverse breakdown voltages are adjustable and controllable, and a TVS device with symmetrical forward and reverse breakdown voltages is realized.
上述描述仅是对本发明较佳实施例的描述，并非对本发明范围的任何限定，本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰，均属于权利要求书的保护范围。The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosures shall fall within the protection scope of the claims.

Claims (6)

  1. 一种击穿电压对称的双向TVS器件，其特征在于，包括N型衬底、N型埋层、P型外延层、深沟槽、P阱和N+区域；A bidirectional TVS device with symmetrical breakdown voltage, characterized in that it includes an N-type substrate, an N-type buried layer, a P-type epitaxial layer, a deep trench, a P well, and an N+ region;
    所述N型埋层位于所述N型衬底上，所述P型外延层位于所述N型埋层上，The N-type buried layer is located on the N-type substrate, and the P-type epitaxial layer is located on the N-type buried layer,
    所述P阱和所述N+区域位于所述P型外延层中，所述深沟槽贯穿所述P型外延层、所述N型埋层和所述N型衬底；The P well and the N+ region are located in the P-type epitaxial layer, and the deep trench runs through the P-type epitaxial layer, the N-type buried layer and the N-type substrate;
    所述N+区域为两个，分别位于所述P阱的两侧且距离所述P阱的距离相等；There are two N+ regions, which are respectively located on both sides of the P well and have the same distance from the P well;
    所述N+区域引出作为该双向TVS器件的正极，所述P型衬底作为该双向TVS器件的负极。The N+ region leads out as the positive pole of the bidirectional TVS device, and the P-type substrate serves as the negative pole of the bidirectional TVS device.
  2. 如权利要求1所述的击穿电压对称的双向TVS器件，其特征在于，所述N+区域与所述P阱之间的距离D1由所述N+区域与所述P阱的版图尺寸控制；所述距离D1用于调节正向击穿电压，其范围为0-5微米。The bidirectional TVS device with symmetrical breakdown voltage as claimed in claim 1, wherein the distance D1 between the N+ region and the P well is controlled by the layout size of the N+ region and the P well; The distance D1 is used to adjust the forward breakdown voltage, and its range is 0-5 microns.
  3. 如权利要求1所述的击穿电压对称的双向TVS器件，其特征在于，所述P阱与所述N型埋层之间的距离D2由所述P阱的深度和所述P型外延层的厚度尺寸控制；所述距离D2用于调节反向击穿电压，其范围为0-5微米。The bidirectional TVS device with symmetrical breakdown voltage as claimed in claim 1, wherein the distance D2 between the P well and the N-type buried layer is determined by the depth of the P well and the P-type epitaxial layer The thickness dimension control; the distance D2 is used to adjust the reverse breakdown voltage, and its range is 0-5 microns.
  4. 如权利要求1所述的击穿电压对称的双向TVS器件，其特征在于，所述深沟槽穿过所述N型埋层，以降低漏电流参数。The bidirectional TVS device with symmetrical breakdown voltage according to claim 1, wherein the deep trench passes through the N-type buried layer to reduce leakage current parameters.
  5. 如权利要求1所述的击穿电压对称的双向TVS器件，其特征在于，所述N+区域和所述P阱的版图均为条状插指结构。The bidirectional TVS device with symmetric breakdown voltage according to claim 1, characterized in that the layout of the N+ region and the P well are strip-shaped interfinger structures.
  6. 如权利要求1所述的击穿电压对称的双向TVS器件，其特征在于，所述P阱的掺杂浓度高于所述P型外延层的掺杂浓度。The bidirectional TVS device with symmetrical breakdown voltage according to claim 1, wherein the doping concentration of the P well is higher than the doping concentration of the P-type epitaxial layer.
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US20160148921A1 (en) * 2014-11-25 2016-05-26 Shekar Mallikararjunaswamy Circuit configuration and manufacturing processes for vertical transient voltage suppressor (tvs) and emi filter
CN112838119A (en) * 2021-01-20 2021-05-25 无锡力芯微电子股份有限公司 Bidirectional transient voltage suppressor and manufacturing method thereof
CN114005870A (en) * 2021-11-24 2022-02-01 无锡中微晶园电子有限公司 Two-way TVS device with symmetric breakdown voltage
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JP2015070078A (en) * 2013-09-27 2015-04-13 ルネサスエレクトロニクス株式会社 Semiconductor device and method of manufacturing the same
US20160148921A1 (en) * 2014-11-25 2016-05-26 Shekar Mallikararjunaswamy Circuit configuration and manufacturing processes for vertical transient voltage suppressor (tvs) and emi filter
CN112838119A (en) * 2021-01-20 2021-05-25 无锡力芯微电子股份有限公司 Bidirectional transient voltage suppressor and manufacturing method thereof
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CN216288469U (en) * 2021-11-24 2022-04-12 无锡中微晶园电子有限公司 Two-way TVS device with symmetric breakdown voltage

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