WO2023072732A1 - Procédé de fabrication de composant optoélectronique et composant optoélectronique - Google Patents

Procédé de fabrication de composant optoélectronique et composant optoélectronique Download PDF

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Publication number
WO2023072732A1
WO2023072732A1 PCT/EP2022/079259 EP2022079259W WO2023072732A1 WO 2023072732 A1 WO2023072732 A1 WO 2023072732A1 EP 2022079259 W EP2022079259 W EP 2022079259W WO 2023072732 A1 WO2023072732 A1 WO 2023072732A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
optoelectronic semiconductor
optoelectronic
carrier
optoelectronic component
Prior art date
Application number
PCT/EP2022/079259
Other languages
German (de)
English (en)
Inventor
Daniel Richter
Gunnar Petersen
Andreas Reith
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Ams-Osram International Gmbh
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Filing date
Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2023072732A1 publication Critical patent/WO2023072732A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a method for producing an optoelectronic component and an optoelectronic component.
  • Optoelectronic components with different housings are known in the prior art.
  • ceramic housings are used for optoelectronic components emitting light from the ultraviolet spectral range.
  • One object of the present invention is to specify a method for producing an optoelectronic component. Another object of the present invention is to provide an optoelectronic component. These objects are achieved by a method for producing an optoelectronic component and by an optoelectronic component having the features of the independent claims. Various developments are specified in the dependent claims.
  • a method for producing an optoelectronic component comprises steps for providing a carrier, for providing an optoelectronic semiconductor chip with a light-emitting front side and a rear side having electrical contacts, for arranging the optoelectronic semiconductor chip on a top side of the carrier, the front side of the optoelectronic semiconductor chip being on the top side of the Carrier is facing, for forming a reflector layer over the back of the optoelectronic semiconductor chip and for arranging an encapsulating material over the upper side of the carrier, the optoelectronic semiconductor chip and the reflector layer being at least partially embedded in the encapsulation material.
  • the encapsulation material can form a housing body of the optoelectronic component and this can form the essential supporting element of the optoelectronic component.
  • the reflector layer formed over the rear side of the optoelectronic semiconductor chip can advantageously protect the optoelectronic semiconductor chip from environmental influences, for example moisture.
  • a fastening material is arranged, which forms a material channel extending between the top side of the carrier and the optoelectronic semiconductor chip.
  • the fillet of material is covered by the reflector layer and at least partially embedded in the encapsulation material.
  • a reflector cavity is formed through the material fillet in the encapsulating material, the wall of which is formed by the reflector layer.
  • the optoelectronic component obtainable by the method can have a particularly high efficiency.
  • the formation of the reflector cavity from the material fillet formed by the fastening material advantageously results in a particularly compact reflector cavity arranged closely around the optoelectronic semiconductor chip, which allows the optoelectronic component obtainable by the method to have a small overall size.
  • the reflector layer is formed in such a way that it also covers side faces of the optoelectronic semiconductor chip that extend from the front side to the back side of the optoelectronic semiconductor chip.
  • This variant of the production method advantageously results in a particularly compact design of the optoelectronic component.
  • the reflector layer arranged on the side faces of the optoelectronic semiconductor chip can reflect light emitted in the lateral direction by the optoelectronic semiconductor chip back into the optoelectronic semiconductor chip, from where it can be emitted again and thereby made usable.
  • the optoelectronic component obtainable by the method can have a particularly high light output and a particularly high efficiency.
  • the reflector layer is also formed over a section of the top side of the carrier next to the optoelectronic semiconductor chip.
  • the optoelectronic component obtainable by the method advantageously has a reflective upper side.
  • the electrical contacts of the optoelectronic semiconductor chip are covered by a protective layer before the reflector layer is formed. After the encapsulation material has been arranged, the electrical contacts of the optoelectronic semiconductor chip are at least partially uncovered. This advantageously prevents the electrical contacts of the optoelectronic semiconductor chip from being covered by the reflector layer and the encapsulating material.
  • a further step is carried out to detach the carrier from the encapsulation material and the optoelectronic semiconductor chip.
  • the housing body formed from the encapsulation material forms the essential load-bearing element Element of the optoelectronic component obtainable by the method.
  • a further step is carried out to remove the fillet of material. This prevents the fastening material forming the material fillet from disadvantageously aging during operation of the optoelectronic semiconductor chip.
  • this includes a further step for structuring the carrier.
  • the carrier remains on the finished optoelectronic component and forms a cover.
  • This can be structured to implement an optical functionality, for example in the form of a Fresnel lens.
  • this includes a further step of forming an optical lens over the front side of the optoelectronic semiconductor chip.
  • the optical lens can shape the beam of the light emitted by the optoelectronic semiconductor chip.
  • the lens is formed using a dispensing method.
  • the optical lens extends up to a stop edge. This advantageously achieves self-adjustment of the lens.
  • an outer edge of the front side of the optoelectronic semiconductor chip serves as a stop edge.
  • a particularly precise alignment of the optical lens on the front side of the optoelectronic semiconductor chip is thereby advantageously achieved.
  • the stopping edge is created by creating a saw mark in the capsule material educated .
  • this enables the production of an optical lens that is larger than the front side of the optoelectronic semiconductor chip.
  • An optoelectronic component has an optoelectronic semiconductor chip with a light-emitting front side and a rear side having electrical contacts.
  • a reflector layer is arranged on the rear side of the optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip and the reflector layer are at least partially embedded in an encapsulation material.
  • the front side of the optoelectronic semiconductor chip is not covered by the encapsulation material.
  • the encapsulation material forms a housing body of the optoelectronic component.
  • a rear side of the housing body and side surfaces of the housing body adjoining the rear side of the housing body form outer surfaces of the optoelectronic component.
  • This optoelectronic component can advantageously have extremely compact external dimensions.
  • the housing body forms the essential supporting part of the optoelectronic component.
  • the reflector layer arranged on the back of the optoelectronic semiconductor chip can advantageously serve to protect the optoelectronic semiconductor chip from external influences, for example from moisture.
  • the reflector layer is electrically insulated from the electrical contacts of the optoelectronic semiconductor chip.
  • the reflector layer comprises a DBR layer stack and/or a fluoropolymer and/or a metallic mirror layer. This advantageously ensures that the reflector layer arranged on the rear side of the optoelectronic semiconductor chip does not short-circuit the electrical contacts of the optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip is designed to emit light with a wavelength from the ultraviolet spectral range, in particular light with a wavelength between 280 nm and 100 nm. In this case, the optoelectronic semiconductor chip emits light from the UVC spectrum range.
  • a reflector cavity is formed on a front side of the optoelectronic component.
  • the optoelectronic semiconductor chip is arranged in the reflector cavity.
  • a surface of the housing body forming a wall of the reflector cavity is covered by the reflector layer.
  • the reflector cavity is filled with a fastening material.
  • the optoelectronic semiconductor chip arranged in the reflector cavity is thereby advantageously encapsulated and protected from external influences.
  • an optical lens is arranged over the front side of the optoelectronic semiconductor chip.
  • the optical lens can advantageously shape the beam of the light emitted by the optoelectronic semiconductor chip.
  • a transparent cover is placed over the front side of the optoelectronic semiconductor chip.
  • This cover can advantageously enable the optoelectronic semiconductor chip to be protected from damage by external influences and also optionally have beam-shaping properties.
  • the cover has a structure.
  • the cover can advantageously have an optical functionality.
  • the structuring can form a Fresnel lens, for example.
  • FIG. 1 shows a side view of a carrier with cans of a fastening material arranged thereon;
  • FIG. 2 shows the carrier with optoelectronic semiconductor chips attached by means of the attachment material
  • FIG. 3 shows a side view of the carrier with optoelectronic semiconductor chips arranged thereon and subsequently arranged cans of a fastening material
  • FIG. 4 shows one of the semiconductor chips after the formation of a reflector layer and the arrangement of an encapsulation material
  • FIG. 5 shows the optoelectronic semiconductor chip after the formation of external electrical contacts
  • FIG. 6 shows the optoelectronic semiconductor chip during the formation of an alternative reflector layer
  • FIG. 7 shows the optoelectronic semiconductor chip after the removal of a temporary protective layer
  • FIG. 8 shows the optoelectronic semiconductor chip after the alternative reflector layer has been formed and the encapsulating material has been arranged
  • FIG. 9 shows the optoelectronic semiconductor chip after the formation of the external electrical contacts
  • FIG. 10 shows a sectional side view of a first variant of an optoelectronic component
  • FIG. 11 shows a sectional side view of a second variant of the optoelectronic component
  • FIG. 12 shows a sectional side view of a third variant of the optoelectronic component
  • FIG. 13 shows a sectional side view of a fourth variant of the optoelectronic component
  • FIG. 14 shows a sectional side view of a fifth variant of the optoelectronic component
  • FIG. 15 shows a sectional side view of a sixth variant of the optoelectronic component.
  • FIG. 1 shows a schematic sectional side view of part of a carrier 100 .
  • the carrier 100 can also be referred to as a substrate.
  • the carrier 100 is designed as a plate and has a flat upper side 101 and an underside 102 opposite the upper side 101 .
  • the top 101 can be self-adhesive or provided with a sticky coating.
  • Figure 1 shows that by means of a dosing device 205 doses of a fastening material 200 on the top 101 of the carrier gers 100 can be arranged.
  • the doses of fastening material 200 form spaced droplets on the top surface 101 of the carrier 100 .
  • the fastening material 200 can also be referred to as an adhesive.
  • the fastening material 200 is a UVC-stable material, ie a material that is resistant to radiation in the UVC spectral range.
  • the attachment material 200 may be a siloxane or a low melting point glass.
  • the fastening material 200 can also be a material that does not have to be stable with respect to UVC radiation.
  • FIG. 2 shows a schematic, sectional side view of the carrier 100 in a processing status subsequent to the illustration in FIG.
  • Optoelectronic semiconductor chips 300 have been arranged on the upper side 101 of the carrier 100 .
  • each optoelectronic semiconductor chip 300 was pressed into a respective dose of the fastening material 200 by means of a die-attach method.
  • Each optoelectronic semiconductor chip 300 has a front side 301 , a rear side 302 opposite the front side 301 , and side faces 303 extending from the front side 301 to the rear side 302 .
  • the optoelectronic semiconductor chips 300 are designed to emit electromagnetic radiation, for example electromagnetic radiation with a wavelength from the ultraviolet spectral range, in particular for example from the UVC spectral range.
  • the optoelectronic semiconductor chips 300 can be designed to emit light with a wavelength between 280 nm and 100 nm.
  • the optoelectronic semiconductor chips 300 can be light-emitting diode chips, for example. Every optoelectronic semiconductor Chip 300 has two electrical contacts 310 on its rear side 302 , via which electrical voltage can be applied to the optoelectronic semiconductor chip 300 .
  • the optoelectronic semiconductor chips 300 have been arranged on the top side 101 of the carrier 100 in such a way that the front sides 301 of the optoelectronic semiconductor chips 300 face the top side 101 of the carrier 100 .
  • the fastening material 200 has formed a material channel 210 that extends between the top side 101 of the carrier 100 and the side surfaces 303 of the optoelectronic semiconductor chip 300 .
  • the fastening material 200 wets the top side 101 of the carrier 100 and the side surfaces 303 of the optoelectronic semiconductor chip 300 .
  • the material fillet 210 can also be denoted by the English term fillet.
  • the doses of fastening material 200 previously arranged on the upper side 101 of the carrier 100 were dimensioned such that the fastening material 200 at least partially covers the side surfaces 303 of the optoelectronic semiconductor chips 300 in the region of the material fillets 210 . Covering the side faces 303 of the optoelectronic semiconductor chips 300 as completely as possible is expedient.
  • the rear sides 302 of the optoelectronic semiconductor chips 300 and the electrical contacts 310 arranged on the rear sides 302 are not covered by the fastening material 200 .
  • FIG. 3 shows a schematic representation of an alternative procedure for achieving the state of the process shown in FIG.
  • the optoelectronic semiconductor chips 300 are arranged on the upper side 101 of the carrier 100 before the fastening material 200 is arranged.
  • the upper side 101 of the carrier 100 is designed or coated in an adhesive manner, so that the optoelectronic semiconductor chips 300 remain in their respective position. Only then is the fastening material 200 removed by means of the dosing device 205 are applied next to the optoelectronic semiconductor chips 300 in such a way that the material fillets 210 described with reference to FIG. 2 are formed.
  • the fastening material 200 is cured.
  • a cleaning step can then optionally take place, for example by means of a plasma treatment.
  • FIG. 4 shows a schematic, sectional side view of part of the carrier 100 with one of the optoelectronic semiconductor chips 300 arranged thereon, in a processing status that follows the representation in FIG.
  • a protective layer 400 has first been arranged on the electrical contacts 310 on the rear side 302 of the optoelectronic semiconductor chip 300 .
  • the protective layer 400 is limited to the electrical contacts 310 , but covers and protects them at least partially.
  • the protective layer 400 can be formed by a photoresist, for example, and structured by a photolithographic method.
  • a reflector layer 500 has been formed over the rear side 302 of the optoelectronic semiconductor chip 300 , over the material fillet 210 and over sections 110 of the top side 101 of the carrier 100 arranged next to the optoelectronic semiconductor chip 300 .
  • the reflector layer 500 thus covers the parts of the rear side 302 of the optoelectronic semiconductor chip 300 that are not protected by the protective layer 400 and the surface of the material fillet 210 facing away from the top side 101 of the carrier 100 .
  • the extension of the reflector layer 500 to the section 110 of the top side 101 of the carrier 100 located next to the optoelectronic semiconductor chip 300 can optionally also be dispensed with.
  • the reflector layer 500 is intended to reflect light emitted by the optoelectronic semiconductor chip 300 .
  • the reflector layer 500 can comprise a DBR (distributed Bragg reflector) layer stack, for example.
  • the reflector layer 500 can also comprise another reflective layer, for example a layer which has a fluoropolymer.
  • the reflector layer 500 is electrically insulated from the electrical contacts 310 of the optoelectronic semiconductor chip 300 such that the electrical contacts 310 are not short-circuited by the reflector layer 500 .
  • the reflector layer 500 can be formed, for example, by vapor deposition and/or by means of cathode sputtering.
  • an encapsulating material 600 has been placed over the top 101 of the carrier 100 .
  • the optoelectronic semiconductor chip 300 , the material channel 210 of the fastening material 200 and the reflector layer 500 have been at least partially embedded in the encapsulation material 600 .
  • the encapsulating material 600 covers the sections of the reflector layer 500 arranged on the material fillet 210 and the parts of the reflector layer 500 arranged directly on the upper side 101 of the carrier 100 . If the reflector layer 500 does not extend to the top side 101 of the carrier 100 , then the encapsulation material 600 directly covers the sections 110 of the top side 101 of the carrier 100 located next to the optoelectronic semiconductor chip 300 .
  • the encapsulation material 600 can also cover the parts of the reflector layer 500 arranged over the rear side 302 of the optoelectronic semiconductor chip 300 and, for example, end flush with the protective layer 400 arranged on the electrical contacts 310 . However, this part of the reflector layer 500 can also remain uncovered by the encapsulation material 600 and, for example, remain flush with the encapsulation material complete 600 . Parts of the encapsulation material 600 covering the protective layer 400 are optionally removed together with the protective layer 400 in a later processing step.
  • the encapsulation material 600 can be applied, for example, by a casting or a molding process (mold process). It is expedient if the encapsulation material 600 forms a continuous layer over the entire upper side 101 of the carrier 100 with all the optoelectronic semiconductor chips 300 arranged thereon.
  • the encapsulation material 600 can have a silicone or an epoxide, for example.
  • the encapsulation material 600 forms a housing body 610 with a rear side 612 facing away from the carrier 100 .
  • FIG. 5 shows a schematic sectional side view of the section of the carrier 100 with the optoelectronic semiconductor chip 300 arranged thereon in a processing status following the illustration in FIG.
  • the protective layer 400 arranged on the electrical contacts 310 of the optoelectronic semiconductor chip 300 was first removed in order to at least partially expose the electrical contacts 310 and make them accessible on the rear side 612 of the housing body 610 formed by the encapsulation material 600.
  • External electrical contacts 320 have then been formed on the rear side 612 of the housing body 610, which are electrically conductively connected to the electrical contacts 310 of the optoelectronic semiconductor chip 300.
  • the outer electrical contacts 320 are accessible on the rear side 612 of the housing body 610 and form extensive soldering areas on the rear side 612 of the housing body 610 in the example illustrated in FIG. Forming the outer electrical contacts 320 can also be referred to as fan out.
  • the outer electrical contacts 320 can be formed, for example, by an electroplating method and can have Au or Ni/Au, for example. Additionally, the outer electrical contacts 320 may have a plating of Cu, Au, Ni, Pt, or another metal.
  • FIG. 6 shows, in a schematic, sectional side view, a section of the carrier 100 with one of the optoelectronic semiconductor chips 300 arranged thereon, in a processing status subsequent to the representation in FIG.
  • the electrical contacts 310 of the optoelectronic semiconductor chip 300 were initially covered by the protective layer 400, as has already been described with reference to FIG. Subsequently, a first insulating layer 510 was deposited over the rear side 302 of the optoelectronic semiconductor chip 300 and the surface of the material fillet 210 formed from the fastening material 200 that faces away from the upper side 101 of the carrier 100 . In the example shown in FIG. 6, the first insulating layer 510 in turn also extends to the sections 110 of the top side 101 of the carrier 100 next to the optoelectronic semiconductor chip 300. FIG.
  • the first insulating layer 510 comprises an electrically insulating material that is transparent to electromagnetic radiation emitted by the optoelectronic semiconductor chip 300 .
  • the first insulating layer 510 may include SiO 2 Al 2 O 3 .
  • a reflective layer 520 was then deposited over the first insulating layer 510 . It is expedient if the reflective layer 520 completely covers the first insulating layer 510 .
  • the reflective layer 520 is suitable from the optoelectronic semi- conductor chip 300 to reflect emitted electromagnetic radiation.
  • the reflective layer 520 may include a metal, such as Al or Ag.
  • the electrical contacts 310 of the optoelectronic semiconductor chip 300 are electrically insulated from the reflective layer 520 by the first insulating layer 510 .
  • FIG. 7 shows a schematic sectional side view of a processing status following the representation in FIG.
  • the protective layer 400 has been removed, as a result of which the electrical contacts 310 of the optoelectronic semiconductor chip 300 have been exposed. Parts of the first insulating layer 510 and the reflective layer 520 covering the protective layer 400 have been removed together with the protective layer 400 .
  • FIG. 8 shows a schematic sectional side view of a processing status following the illustration in FIG.
  • the electrical contacts 310 of the optoelectronic semiconductor chip 300 were covered by a further protective layer 410 .
  • the further protective layer 410 can have a photoresist, for example, and can have been structured photolithographically.
  • the part of the electrical contacts 310 covered by the further protective layer 410 is somewhat smaller than the part of the electrical contacts 310 previously covered by the protective layer 400 , so that an edge region of the electrical contacts 310 has remained uncovered around the further protective layer 410 .
  • a second insulating layer 530 has then been deposited over the reflective layer 520 .
  • the second insulating layer 530 has expediently completely covered the reflective layer 520 and also the The edge regions of the electrical contacts 310 of the optoelectronic semiconductor chip 300 that remain in the further protective layer 410 are covered.
  • the second insulating layer 530 has an electrically insulating material, for example SiC>2 or Al 2 O 3 .
  • the first insulating layer 510, the reflective layer 520 and the second insulating layer 530 together form the reflector layer 500 in the production variant described with reference to FIGS.
  • the encapsulation material 600 has subsequently been arranged as has already been described with reference to FIG.
  • FIG. 9 shows a schematic sectional side view of a processing status following the representation in FIG.
  • the processing status shown in FIG. 9 corresponds to the processing status described above with reference to FIG.
  • the further protective layer 410 was first removed in order to expose the electrical contacts 310 of the optoelectronic semiconductor chip 300 at least partially. Parts of the second insulating layer 530 and of the encapsulating material 600 covering the further protective layer 410 have been removed together with the further protective layer 410 .
  • the outer electrical contacts 320 were then applied.
  • the outer electrical contacts 320 are electrically insulated from the reflective layer 520 of the reflector layer 500 by the second insulating layer 530 of the reflector layer 500 .
  • FIG. 10 shows a schematic, sectional side view of a first variant of an optoelectronic component 10 that was formed by further processing of the components shown in FIG.
  • the optoelectronic component 10 comprises a section of the encapsulation material 600 forming the housing body 610 of the optoelectronic component 10 and one of the optoelectronic semiconductor chips 300 previously arranged on the carrier 100 .
  • the encapsulation material 600 has been divided in such a way that the housing body 610 of the optoelectronic component 10 has been separated from the remaining sections of the encapsulation material 600 . This can be done, for example, by a sawing process.
  • Side faces 613 of the housing body 610 formed by the separating process form side faces 13 of the optoelectronic component 10 .
  • the remaining sections of the encapsulation material 600 were divided up in an analogous manner in order to form further optoelectronic components 10 with further housing bodies 610 .
  • the carrier 100 was removed, for example detached. As a result, a front side 11 of the optoelectronic component 10 was uncovered.
  • a rear side 12 of the optoelectronic component 10 is formed by the rear side 612 of the housing body 610 with the external electrical contacts 320 arranged thereon.
  • a front side 611 of the housing body 610 opposite the rear side 612 is covered by the reflector layer 500 .
  • a reflector cavity 620 is formed on the front side 11 of the optoelectronic component 10 .
  • the optoelectronic semiconductor chip 300 is arranged in this reflector cavity 620 .
  • a part of the front side 611 of the housing body 610 that forms a wall 625 of the reflector cavity 620 is covered by the reflector layer 500 .
  • the optoelectronic The part of the reflector cavity 620 surrounding the niche semiconductor chip 300 is filled by the fastening material 200 .
  • the optoelectronic semiconductor chip 300 is thus at least partially embedded in the fastening material 200 .
  • the front side 301 of the optoelectronic semiconductor chip 300 of the optoelectronic component 10 is uncovered and is exposed on the front side 11 of the optoelectronic component 10 . Remnants of the fastening material 200 can remain on the front side 301 of the optoelectronic semiconductor chip 300 . But these can also be removed .
  • the front side 11 of the optoelectronic component 10 is thus formed by the front side 301 of the optoelectronic semiconductor chip 300 , an exposed surface of the fastening material 200 arranged in the reflector cavity 620 and an exposed section of the reflector layer 500 arranged on the front side 611 of the housing body 610 .
  • the front side 611 of the housing body 610 itself could also be exposed on the front side 11 of the optoelectronic component 10 .
  • the optoelectronic component 10 can be designed for surface mounting, for example.
  • the optoelectronic component 10 is arranged with its rear side 12 at the mounting position and electrically contacted by means of the outer electrical contacts 320 .
  • the fastening material 200 arranged in the reflector cavity 620 to the reflector layer 500 on the wall 625 of the reflector cavity 620 and is emitted there in the direction of the front side 11 of the optoelectronic component 10 reflected, so that this electromagnetic radiation from the optoelectronic component 10 in usable Way is emitted. It is expedient if the fastening material 200 has a high level of transparency for and high resistance to the electromagnetic radiation emitted by the optoelectronic semiconductor chip 300 .
  • FIG. 11 shows a schematic sectional side view of an alternative variant of the optoelectronic component 10 .
  • the variant of the optoelectronic component 10 shown in FIG. 11 differs from the variant of the optoelectronic component 10 shown in FIG. 10 in that the fastening material 200 arranged in the reflector cavity 620 has also been removed after the carrier 100 has been removed. This can be done before or after the optoelectronic component 10 is separated by dividing the encapsulation material 600 .
  • the removal of the fastening material 200 can have taken place wet-chemically, for example. Since the fastening material 200 has been removed, the reflector cavity 620 is at least partially empty, ie free of solid or liquid material.
  • the variant of the optoelectronic component 10 shown in FIG. 11 can offer the advantage over the variant shown in FIG. 10 that aging of the fastening material 200 arranged in the reflector cavity 620 is ruled out.
  • FIG. 12 shows a further variant of the optoelectronic component 10 in a schematic sectional side view.
  • the variant of the optoelectronic component 10 shown in FIG. 12 differs from the variant in FIG. 10 in that the carrier 100 was not detached, but instead was divided together with the encapsulating material 600 when the optoelectronic component 10 was separated. Thus, a portion of the carrier 100 now forms an at the optoelectronic component remaining cover 120 .
  • the cover 120 covers the reflector cavity 620 and the front side 301 of the optoelectronic semiconductor chip 300 arranged in the reflector cavity 620 . As a result, the optoelectronic semiconductor chip 300 is protected from external influences.
  • electromagnetic radiation generated by the optoelectronic semiconductor chip 300 is emitted through the cover 120 . It is therefore expedient that the material used for the carrier 100 in this variant of the optoelectronic component 10 has a high transparency for electromagnetic radiation generated by the optoelectronic semiconductor chip 300 .
  • the cover 120 can have a structure 130 on its side facing away from the optoelectronic semiconductor chip 300 .
  • This structuring 130 can be formed, for example, after the encapsulation material 600 has been arranged and before the optoelectronic component 10 has been singulated.
  • the carrier 100 forming the cover 120 can be structured by means of an etching method, for example.
  • the structuring 130 can bring about a beam-shaping property of the cover 120 .
  • the structuring 130 can be in the form of a Fresnel lens.
  • FIG. 13 shows a schematic sectional side view of a further variant of the optoelectronic component 10 .
  • the variant of the optoelectronic component 10 shown in FIG. 13 differs from the variant shown in FIG. 10 in that the fastening material 200 that forms the material fillets 210 was dispensed with during production. Instead, the optoelectronic semiconductor chips 300 were made without the additional fastening material 200 arranged on the upper side 101 of the carrier 100 , for which purpose this upper side 101 can be made sticky, for example.
  • the reflector layer 500 was then formed in such a way that it also covered side areas 303 of the optoelectronic semiconductor chips 300 extending from the front sides 301 to the rear sides 302 of the optoelectronic semiconductor chips 300 .
  • the optoelectronic component 10 shown in FIG. 13 thus differs from the variant in FIG.
  • FIG. 14 shows a schematic sectional side view of a further variant of the optoelectronic component 10 .
  • the fastening material 200 arranged in the reflector cavity 620 was removed.
  • an optical lens 700 was subsequently formed over the front side 301 of the optoelectronic semiconductor chip 300 .
  • the optical lens 700 can bring about beam shaping of the electromagnetic radiation emitted by the optoelectronic semiconductor chip 300 on its front side 301 and can also improve the light extraction from the optoelectronic semiconductor chip 300. mend .
  • the optical lens 700 is designed as a convex lens. However, other lens shapes are also possible.
  • the optical lens 700 is limited to the front side 301 of the optoelectronic semiconductor chip 300 .
  • the optical lens 700 can have been formed, for example, by means of a dosing process.
  • the material of the optical lens 700 was applied to the front side 301 of the optoelectronic semiconductor chip 300 in such a way that it has extended up to the outer edges 305 of the front side 301 of the optoelectronic semiconductor chip 300 acting as a stop edge 710 . This was made possible by the previous removal of the fastening material 200 arranged in the reflector cavity 620 .
  • the material of the optical lens 700 can be a polysiloxane or a fluoropolymer, for example.
  • the fastening material 200 can be removed before or after the optoelectronic component 10 is singulated.
  • the removal of the fastening material 200 can have taken place wet-chemically, for example. Since the fastening material 200 has been removed, the reflector cavity 620 is at least partially empty, ie free of solid or liquid material.
  • FIG. 15 shows a schematic sectional side view of a further variant of the optoelectronic component 10 .
  • the variant of the optoelectronic component 10 shown in FIG. 15 also has an optical lens 700 arranged over the front side 301 of the optoelectronic semiconductor chip 300 .
  • the fastening material 200 arranged in the reflector cavity 620 was not removed.
  • the optical lens 700 extends not only over the front side 301 of the optoelectronic semiconductor chip 300, but also via the fastening material 200 arranged in the reflector cavity 620 and a part of the front side 611 of the housing body 610 up to a sawing track 630 formed in the encapsulating material 600 of the housing body 10 .
  • the saw track 630 can have been created, for example, before or after the dicing of the optoelectronic component 10 .
  • the optical lens 700 can also be formed in the optoelectronic component 10 shown in FIG.
  • the variant of the optoelectronic component 10 shown in FIG. 13 could also be provided with a sawing track 630 serving as a stop edge 710 and then be equipped with an optical lens 700 .
  • optical lenses 700 shown in FIGS. 14 and 15 using a molding process. In this case no stopping edge 710 is required.
  • the variant of the optoelectronic component 10 shown in FIG. 10 could also be equipped with an optical lens 700 limited to the front side 301 of the optoelectronic semiconductor chip 300 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un composant optoélectronique, comprenant les étapes consistant à fournir un support; à fournir une puce à semi-conducteur optoélectronique dotée d'une face avant d'électroluminescence et d'une face arrière qui comporte des contacts électriques; à agencer la puce à semi-conducteur optoélectronique sur une face supérieure du support, ladite face avant de la puce à semi-conducteur optoélectronique faisant face à la face supérieure du support; à former une couche réfléchissante sur la face arrière de la puce à semi-conducteur optoélectronique; et à agencer un matériau d'encapsulation sur la face supérieure du support, la puce à semi-conducteur optoélectronique et la couche réfléchissante étant au moins partiellement intégrées dans le matériau d'encapsulation.
PCT/EP2022/079259 2021-10-28 2022-10-20 Procédé de fabrication de composant optoélectronique et composant optoélectronique WO2023072732A1 (fr)

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DE102021128151.2A DE102021128151A1 (de) 2021-10-28 2021-10-28 Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
DE102021128151.2 2021-10-28

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US20180301604A1 (en) * 2017-04-12 2018-10-18 Luminus, Inc. Packaged UV-LED Device With Anodic Bonded Silica Lens And No UV-Degradable Adhesive
EP3396725A1 (fr) * 2017-04-25 2018-10-31 Nichia Corporation Dispositif électroluminescent et son procédé de fabrication
WO2018234103A1 (fr) * 2017-06-19 2018-12-27 Osram Opto Semiconductors Gmbh Procédé de fabrication d'un composant optoélectronique et composant optoélectronique
EP2219241B1 (fr) * 2009-02-17 2019-06-19 LG Innotek Co., Ltd. Emballage de dispositif électroluminescent
US20190296199A1 (en) * 2018-03-20 2019-09-26 Nichia Corporation Light emitting device and method of manufacturing light emitting device

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KR102080778B1 (ko) 2013-09-11 2020-04-14 엘지이노텍 주식회사 발광 소자 패키지
JP6582382B2 (ja) 2014-09-26 2019-10-02 日亜化学工業株式会社 発光装置の製造方法
DE102015102699A1 (de) 2015-02-25 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
US9966514B2 (en) 2015-07-02 2018-05-08 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode package structure and fabrication method

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Publication number Priority date Publication date Assignee Title
EP2219241B1 (fr) * 2009-02-17 2019-06-19 LG Innotek Co., Ltd. Emballage de dispositif électroluminescent
US20180301604A1 (en) * 2017-04-12 2018-10-18 Luminus, Inc. Packaged UV-LED Device With Anodic Bonded Silica Lens And No UV-Degradable Adhesive
EP3396725A1 (fr) * 2017-04-25 2018-10-31 Nichia Corporation Dispositif électroluminescent et son procédé de fabrication
WO2018234103A1 (fr) * 2017-06-19 2018-12-27 Osram Opto Semiconductors Gmbh Procédé de fabrication d'un composant optoélectronique et composant optoélectronique
US20190296199A1 (en) * 2018-03-20 2019-09-26 Nichia Corporation Light emitting device and method of manufacturing light emitting device

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