WO2023070930A1 - Two-dimensional chalcogen compound, and preparation method therefor and application thereof - Google Patents

Two-dimensional chalcogen compound, and preparation method therefor and application thereof Download PDF

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WO2023070930A1
WO2023070930A1 PCT/CN2021/141923 CN2021141923W WO2023070930A1 WO 2023070930 A1 WO2023070930 A1 WO 2023070930A1 CN 2021141923 W CN2021141923 W CN 2021141923W WO 2023070930 A1 WO2023070930 A1 WO 2023070930A1
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dimensional
chalcogen compound
iodine
iodine vapor
present
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王殳凹
张瑜港
何林玮
陈龙
陈兰花
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苏州大学
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    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00Compounds of tin
    • C01G19/006Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/02Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
    • B01J20/0203Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of metals not provided for in B01J20/04
    • B01J20/0251Compounds of Si, Ge, Sn, Pb
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/02Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
    • B01J20/0203Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of metals not provided for in B01J20/04
    • B01J20/0259Compounds of N, P, As, Sb, Bi
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/02Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
    • B01J20/0203Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of metals not provided for in B01J20/04
    • B01J20/0262Compounds of O, S, Se, Te
    • B01J20/0266Compounds of S
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21FPROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
    • G21F9/00Treating radioactively contaminated material; Decontamination arrangements therefor
    • G21F9/02Treating gases

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  • the invention relates to the technical field of adsorption materials, in particular to a two-dimensional chalcogen compound and its preparation method and application.
  • Nuclear energy is one of the most promising clean energy sources for the future of civilization.
  • the reserves of spent fuel are also increasing.
  • Spent fuel contains unfissioned uranium-235, which needs to be recovered and reused, and a large amount of gaseous radioactive iodine is produced in this process (ie spent fuel reprocessing).
  • gaseous radioactive iodine has the characteristics of high mobility and easy migration with airflow, which leads to a larger pollution area and is more likely to cause serious harm to the ecological environment and human health.
  • radioactive iodine is a type of radioactive nuclide that spreads quickly and is highly harmful. Therefore, the adsorption and treatment of gaseous iodine in waste gas from reprocessing plants has become an important research direction for radioactive waste gas treatment.
  • people mainly use methods such as dry dust removal, liquid absorption and solid phase adsorption to remove radioactive iodine in gas. Dry dedusting has low treatment efficiency for radioactive gases and is mainly used for the disposal of radioactive aerosols.
  • the liquid absorption method mainly includes mercury washing, pickling and alkali washing.
  • the current industrial solid-phase adsorption method for capturing radioactive iodine mainly relies on the use of active silver (Ag) loaded on various solid supports as the adsorbent.
  • Active silver silver nanoparticles/silver nanoclusters/silver ions
  • the biggest limitation of this adsorbent in practical application is the instability of the Ag-I bond (the bond energy between Ag-I is usually 66 kJ/mol).
  • the unstable Ag-I bond is prone to breakage under the influence of external conditions such as light and temperature, which will lead to the re-release of radioactive iodine and cause radioactive pollution.
  • Triethylenediamine is the most common impregnant used in activated carbon sorbents to capture radioactive iodine species.
  • triethylenediamine-impregnated activated carbon has excellent adsorption capacity and high purification efficiency, and the process of capturing iodine is relatively simple; however, its disadvantages are also obvious: (1) The capacity of the adsorbent increases with (2) The sublimation of organic amines is easy to occur, resulting in a significant decrease in the iodine absorption efficiency of impregnated carbon materials; (3) Iodine adsorption is an exothermic process, and organic amines reduce the ignition point of impregnated carbons. exacerbated potential safety hazards.
  • Metal-organic framework materials and covalent organic framework materials are a new class of crystalline porous materials. Due to the diversity of their metal centers and ligands, they have variable chemical properties, and this type of material is widely used in radioactive iodine. remove. However, the expensive price of its organic ligands limits its practical application.
  • the present invention synthesizes a novel two-dimensional layered sulfide material, which can achieve efficient removal of iodine vapor.
  • the present invention provides the technical scheme as follows:
  • the present invention also provides the preparation method of the two-dimensional chalcogen compound, comprising the following steps: reacting the tin source and the sulfur element in diethylenetriamine at 150°C to 180°C to obtain the two-dimensional chalcogen compound Chalcogen compounds; wherein, the molar ratio of the tin source to the sulfur element is 1:1-5.
  • reaction needs to be carried out under heating conditions, and the reaction time is relatively long, in order to avoid a large amount of volatilization of diethylenetriamine, it is preferable to carry out the reaction in a closed container.
  • diethylenetriamine acts as a solvent and a template in the reaction, and after the reaction is completed, ammonium ions are generated and exist in the pores of the two-dimensional chalcogen compound, which plays a role in balancing the interlayer charge . It is advisable to add diethylenetriamine in an amount to submerge the reactants, generally 1/5 to 3/5 of the volume of the reaction vessel.
  • the tin source is tin element or tetravalent tin salt.
  • the tin elemental substance includes but not limited to tin powder, tin particles, tin sticks, preferably tin powder.
  • the tetravalent tin salt is preferably tin tetrachloride.
  • the sulfur element is preferably sublimed sulfur.
  • reaction time is 3-7 days.
  • the molar ratio of the tin source to the sulfur element is 3:7.
  • the present invention also provides the application of the two-dimensional chalcogen compound in the adsorption of iodine vapor.
  • S 2- in its molecular structure can reduce gaseous I 2 to I - , and then react with I - through Sn 4+ Generate SnI 4 , thereby realizing the adsorption of iodine vapor. Moreover, the generated SnI 4 is stable in nature and will not desorb iodine due to standing for a long time.
  • the iodine vapor is radioactive iodine vapor.
  • the two-dimensional chalcogenide has an iodine vapor adsorption capacity of 2.38g/g, and at 75°C and a 400ppm iodine vapor concentration, the iodine vapor The amount reached 2.35g/g.
  • the present invention synthesized a new type of two-dimensional chalcogen compound (NH 4 ) 2 [Sn 3 S 7 ], Using S 2- in the two-dimensional chalcogen compound to reduce I 2 to I - , and then generate SnI 4 through the reaction of Sn 4+ and I - , so as to realize the adsorption of radioactive iodine vapor.
  • the two-dimensional chalcogen compound of the present invention can realize the removal of iodine vapor under different iodine vapor concentrations (as low as 400ppm) and in a wider temperature range (25°C to 75°C), and will not The phenomenon of iodine desorption occurs after standing for a long time.
  • the two-dimensional chalcogen compound of the present invention is low in cost, and it is estimated that the material cost needed to absorb 1g of iodine vapor is only 0.4 yuan, which has the potential for industrial application.
  • Figure 1 is a schematic structural diagram of (NH 4 ) 2 [Sn 3 S 7 ];
  • Figure 2 is a triangular node composed of Sn atoms and S atoms in the structure of (NH 4 ) 2 [Sn 3 S 7 ];
  • Fig. 3 is the thermogravimetric analysis diagram of (NH 4 ) 2 [Sn 3 S 7 ];
  • Figure 4(a) is a graph of the adsorption capacity of (NH 4 ) 2 [Sn 3 S 7 ] for high-concentration iodine vapor versus time at 75°C;
  • Figure 4(b) is a graph showing the change of adsorption amount of (NH 4 ) 2 [Sn 3 S 7 ] with iodine adsorbed after standing for a long time;
  • Fig. 5 is a graph showing the equilibrium adsorption capacity of (NH 4 ) 2 [Sn 3 S 7 ] for low-concentration iodine vapor at 25°C and 75°C.
  • Figure 1-2 is a schematic diagram of the structure of two-dimensional chalcogenides. It can be seen from the figure that Sn atoms and S atoms form a triangle-like node, and the nodes are connected to each other through S atoms to form a layered structure, and the layers are stacked to form a negatively charged frame structure. Ammonium ions exist in the pores of (NH 4 ) 2 [Sn 3 S 7 ], and play a role in balancing charges.
  • thermogravimetric test The obtained two-dimensional chalcogenides were subjected to a thermogravimetric test (TG).
  • the TG test was carried out in a nitrogen atmosphere.
  • the temperature range of the test was 30°C to 900°C, and the heating rate was 10°C/min.
  • the results are shown in Figure 3.
  • the two-dimensional chalcogenide material was placed in a high-concentration iodine vapor (16000ppm) atmosphere, and the adsorption capacity of the material to iodine vapor was tested at intervals. The results are shown in Figure 4(a).
  • the two-dimensional chalcogenide material adsorbed with iodine was left to stand, and the change of the adsorption amount of iodine on the material was tested at intervals, and the obtained results are shown in Fig. 4(b).
  • the two-dimensional chalcogenide material was placed in an atmosphere with a concentration of 400ppm iodine vapor (close to the concentration of iodine vapor in the process of spent fuel reprocessing), and the equilibrium adsorption capacity of the material to iodine vapor was tested, and the obtained The results are shown in Figure 5.
  • the material has an iodine vapor adsorption capacity of 2.38g/g at 25°C and a concentration of 400ppm iodine vapor. Under the vapor concentration, the adsorption capacity of iodine vapor reached 2.35g/g.
  • the novel two-dimensional chalcogen compound (NH 4 ) 2 [Sn 3 S 7 ] provided by the present invention has a good absorption effect on iodine vapor, and does not cause iodine desorption due to standing for a long time. It can be applied to the removal of radioactive iodine vapor in the process of spent fuel reprocessing.

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Abstract

Disclosed in the present invention is a two-dimensional chalcogen compound. The two-dimensional chalcogen compound is a crystalline material and has the chemical formula of (NH4)2[Sn3S7]; unit cell parameters are formula I and formula II, i.e., α=β=90°, and γ=120°; and a space group is formula III. Further disclosed in the present invention are a preparation method for a two-dimensional chalcogen compound and an application of the two-dimensional chalcogen compound in iodine vapor adsorption. The two-dimensional chalcogen compound disclosed in the present invention can remove iodine vapor under different iodine vapor concentrations (as low as 400 ppm) and within a relatively wide temperature range (25°C-75°C), and has no iodine desorption phenomenon caused by long-time standing.

Description

二维硫属化合物及其制备方法与应用Two-dimensional chalcogen compound and its preparation method and application 技术领域technical field
本发明涉及吸附材料技术领域,尤其涉及一种二维硫属化合物及其制备方法与应用。The invention relates to the technical field of adsorption materials, in particular to a two-dimensional chalcogen compound and its preparation method and application.
背景技术Background technique
核能是人类未来最有前途的清洁能源之一。但随着核电的不断发展,乏燃料的储量也日益增加。乏燃料中含有未裂变的铀-235,需进行回收和重新利用,这个过程中(即乏燃料后处理)会产生大量的气态放射性碘。相对于固体放射性废物来说,气态放射性碘因具有很高的流动性、易随气流迁移等特点,导致其污染面积更大,更易对生态环境和人体健康产生严重的危害。切尔诺贝利和福岛等核事故研究表明,放射性碘是一类传播快、危害大的放射性核素。因此,后处理工厂废气中气态碘的吸附和处理已经成为放射性废气处理的重要研究方向。目前,人们主要使用干法除尘、液体吸收和固相吸附等方法去除气体中的放射性碘。干法除尘对放射性气体的处理效率低,主要用于放射性气溶胶的处置。液体吸收法主要包括汞洗、酸洗和碱洗。虽然该方法具有较高的吸收效率,但是会使用大量的有毒硝酸汞或者硝酸、氢氧化钠等强酸强碱,设备的运行和维护成本高,同时易产生大量的放射性废液。固相吸附法是重要的碘去除方法之一,最为常用的是含银沸石。虽然银基沸石对碘具有较高的去除效率,但是银的大量使用导致吸附材料成本高昂,同时带来一定的环境污染问题。Nuclear energy is one of the most promising clean energy sources for the future of mankind. However, with the continuous development of nuclear power, the reserves of spent fuel are also increasing. Spent fuel contains unfissioned uranium-235, which needs to be recovered and reused, and a large amount of gaseous radioactive iodine is produced in this process (ie spent fuel reprocessing). Compared with solid radioactive waste, gaseous radioactive iodine has the characteristics of high mobility and easy migration with airflow, which leads to a larger pollution area and is more likely to cause serious harm to the ecological environment and human health. Research on nuclear accidents such as Chernobyl and Fukushima has shown that radioactive iodine is a type of radioactive nuclide that spreads quickly and is highly harmful. Therefore, the adsorption and treatment of gaseous iodine in waste gas from reprocessing plants has become an important research direction for radioactive waste gas treatment. At present, people mainly use methods such as dry dust removal, liquid absorption and solid phase adsorption to remove radioactive iodine in gas. Dry dedusting has low treatment efficiency for radioactive gases and is mainly used for the disposal of radioactive aerosols. The liquid absorption method mainly includes mercury washing, pickling and alkali washing. Although this method has a high absorption efficiency, it will use a large amount of toxic mercuric nitrate or strong acid and alkali such as nitric acid and sodium hydroxide. The operation and maintenance costs of the equipment are high, and it is easy to generate a large amount of radioactive waste liquid. Solid phase adsorption is one of the important iodine removal methods, and the most commonly used method is silver-containing zeolite. Although silver-based zeolites have high removal efficiency for iodine, the large use of silver leads to high cost of adsorption materials and brings certain environmental pollution problems.
目前工业上捕获放射性碘的固相吸附法主要是依赖于使用负载在各种固体载体上的活性银(Ag)作为吸附剂。活性银(银纳米粒子/银纳米簇/银离子)可将放射性碘转化为固体AgI,进而除去碘。该吸附剂在实际应用中的最大限制是Ag-I键的不稳定性(Ag-I之间的键能通常为66kJ/mol)。在进一步处理负载碘的银基吸附剂时,不稳定的Ag-I键受光照、温度等外界条件的影响容易发生断裂,这会导致放射性碘的再次释放,造成放射性污染。The current industrial solid-phase adsorption method for capturing radioactive iodine mainly relies on the use of active silver (Ag) loaded on various solid supports as the adsorbent. Active silver (silver nanoparticles/silver nanoclusters/silver ions) can convert radioactive iodine into solid AgI, thereby removing iodine. The biggest limitation of this adsorbent in practical application is the instability of the Ag-I bond (the bond energy between Ag-I is usually 66 kJ/mol). When the iodine-loaded silver-based adsorbent is further processed, the unstable Ag-I bond is prone to breakage under the influence of external conditions such as light and temperature, which will lead to the re-release of radioactive iodine and cause radioactive pollution.
此外,处理和捕获碘化合物的传统工业方法是在活性炭上浸渍有机胺,如三乙二胺和碘化钾。三乙烯二胺是活性炭吸附剂中用于捕获放射性碘物质的最常见的浸渍剂。与其他吸附剂相比,三乙烯二胺浸渍的活性炭具有优异的吸附容量和较高的净化效率,捕获碘的过程相对简单;然而,它的缺点也很明显:(1)吸附剂容量随着温度的升高而降低;(2)容易发生有机胺的升华,导致浸溃碳材料的碘吸收效率显着降低;(3)碘吸附是一个放热过程, 有机胺降低了浸渍碳的着火点,加剧了潜在的安全隐患。Furthermore, the traditional industrial method for handling and trapping iodine compounds is to impregnate activated carbon with organic amines, such as triethylenediamine and potassium iodide. Triethylenediamine is the most common impregnant used in activated carbon sorbents to capture radioactive iodine species. Compared with other adsorbents, triethylenediamine-impregnated activated carbon has excellent adsorption capacity and high purification efficiency, and the process of capturing iodine is relatively simple; however, its disadvantages are also obvious: (1) The capacity of the adsorbent increases with (2) The sublimation of organic amines is easy to occur, resulting in a significant decrease in the iodine absorption efficiency of impregnated carbon materials; (3) Iodine adsorption is an exothermic process, and organic amines reduce the ignition point of impregnated carbons. exacerbated potential safety hazards.
金属有机框架材料与共价有机框架材料是一类新型的晶态多孔材料,由于其金属中心以及配体的多样性赋予了其多变的化学性质,也让这类材料广泛地应用于放射性碘的去除。然而其有机配体昂贵的价格限制了实际应用。Metal-organic framework materials and covalent organic framework materials are a new class of crystalline porous materials. Due to the diversity of their metal centers and ligands, they have variable chemical properties, and this type of material is widely used in radioactive iodine. remove. However, the expensive price of its organic ligands limits its practical application.
发明内容Contents of the invention
为解决上述技术问题,本发明合成了一种新型的二维层状硫化物材料,该材料能够实现对碘蒸气的高效去除。In order to solve the above technical problems, the present invention synthesizes a novel two-dimensional layered sulfide material, which can achieve efficient removal of iodine vapor.
本发明提供了如下所述的技术方案:The present invention provides the technical scheme as follows:
本发明提供了一种二维硫属化合物,所述二维硫属化合物为晶态材料,化学式为(NH 4) 2[Sn 3S 7],晶胞参数为:
Figure PCTCN2021141923-appb-000001
α=β=90°,γ=120°,空间群为
Figure PCTCN2021141923-appb-000002
The present invention provides a two-dimensional chalcogen compound, the two-dimensional chalcogen compound is a crystalline material, the chemical formula is (NH 4 ) 2 [Sn 3 S 7 ], and the unit cell parameters are:
Figure PCTCN2021141923-appb-000001
α=β=90°, γ=120°, the space group is
Figure PCTCN2021141923-appb-000002
本发明还提供了所述的二维硫属化合物的制备方法,包括以下步骤:在150℃~180℃下,使锡源和硫单质于二亚乙基三胺中反应,得到所述二维硫属化合物;其中,所述锡源与硫单质的摩尔比为1:1~5。The present invention also provides the preparation method of the two-dimensional chalcogen compound, comprising the following steps: reacting the tin source and the sulfur element in diethylenetriamine at 150°C to 180°C to obtain the two-dimensional chalcogen compound Chalcogen compounds; wherein, the molar ratio of the tin source to the sulfur element is 1:1-5.
进一步地,由于该反应需要在加热的条件下进行,且反应时间较长,因此,为了避免二亚乙基三胺的大量挥发,优选地使反应于密闭的容器中进行。Further, since the reaction needs to be carried out under heating conditions, and the reaction time is relatively long, in order to avoid a large amount of volatilization of diethylenetriamine, it is preferable to carry out the reaction in a closed container.
本发明中,二亚乙基三胺在反应中起到了溶剂和模板剂的作用,且反应完成后生成铵根离子存在于在二维硫属化合物的孔道中,起到了平衡层间电荷的作用。二亚乙基三胺的添加量以浸没反应物为宜,一般为反应容器体积的1/5~3/5即可。In the present invention, diethylenetriamine acts as a solvent and a template in the reaction, and after the reaction is completed, ammonium ions are generated and exist in the pores of the two-dimensional chalcogen compound, which plays a role in balancing the interlayer charge . It is advisable to add diethylenetriamine in an amount to submerge the reactants, generally 1/5 to 3/5 of the volume of the reaction vessel.
进一步地,所述锡源为锡单质或四价锡盐。所述锡单质包括但不限于锡粉、锡粒、锡棒,优选为锡粉。所述四价锡盐优选为四氯化锡。Further, the tin source is tin element or tetravalent tin salt. The tin elemental substance includes but not limited to tin powder, tin particles, tin sticks, preferably tin powder. The tetravalent tin salt is preferably tin tetrachloride.
进一步地,所述硫单质优选为升华硫。Further, the sulfur element is preferably sublimed sulfur.
进一步地,反应时间为3~7天。Further, the reaction time is 3-7 days.
进一步地,所述锡源与硫单质的摩尔比为3:7。Further, the molar ratio of the tin source to the sulfur element is 3:7.
本发明还提供了所述的二维硫属化合物在吸附碘蒸气中的应用。The present invention also provides the application of the two-dimensional chalcogen compound in the adsorption of iodine vapor.
本发明的二维硫属化合物(NH 4) 2[Sn 3S 7],其分子结构中的S 2-可以将气态的I 2还原成I -,再通过其中的Sn 4+与I -反应生成SnI 4,从而实现了对碘蒸气的吸附。并且,生成的SnI 4性质稳定,不会因为长时间静置而出现碘的脱附现象。 In the two-dimensional chalcogen compound (NH 4 ) 2 [Sn 3 S 7 ] of the present invention, S 2- in its molecular structure can reduce gaseous I 2 to I - , and then react with I - through Sn 4+ Generate SnI 4 , thereby realizing the adsorption of iodine vapor. Moreover, the generated SnI 4 is stable in nature and will not desorb iodine due to standing for a long time.
进一步地,所述碘蒸气为放射性碘蒸气。Further, the iodine vapor is radioactive iodine vapor.
进一步地,所述二维硫属化合物在25℃、400ppm的碘蒸气浓度下,对碘蒸气的吸附量达到了2.38g/g,在75℃、400ppm的碘蒸气浓度下,对碘蒸气的吸附量达到了2.35g/g。Further, at 25°C and an iodine vapor concentration of 400ppm, the two-dimensional chalcogenide has an iodine vapor adsorption capacity of 2.38g/g, and at 75°C and a 400ppm iodine vapor concentration, the iodine vapor The amount reached 2.35g/g.
与现有技术相比,本发明的有益效果在于:Compared with prior art, the beneficial effect of the present invention is:
1.针对传统的银基沸石材料成本高、对乏燃料尾气中放射性碘吸附量有限的问题,本发明合成了一种新型的二维硫属化合物(NH 4) 2[Sn 3S 7],利用该二维硫属化合物中的S 2-将I 2还原成I -,再通过其中的Sn 4+与I -反应生成SnI 4,从而实现对放射性碘蒸气的吸附。 1. In view of the high cost of traditional silver-based zeolite materials and the limited amount of radioactive iodine adsorption in spent fuel exhaust, the present invention synthesized a new type of two-dimensional chalcogen compound (NH 4 ) 2 [Sn 3 S 7 ], Using S 2- in the two-dimensional chalcogen compound to reduce I 2 to I - , and then generate SnI 4 through the reaction of Sn 4+ and I - , so as to realize the adsorption of radioactive iodine vapor.
2.本发明的二维硫属化合物,能够在不同的碘蒸气浓度(低至400ppm)下及较广的温度范围内(25℃~75℃)实现对碘蒸气的去除,且不会因为长时间静置而出现碘的脱附现象。2. The two-dimensional chalcogen compound of the present invention can realize the removal of iodine vapor under different iodine vapor concentrations (as low as 400ppm) and in a wider temperature range (25°C to 75°C), and will not The phenomenon of iodine desorption occurs after standing for a long time.
3.本发明的二维硫属化合物成本低廉,预计每吸附1g碘蒸气需要用到的材料成本仅为0.4元,具有开展工业化应用的潜力。3. The two-dimensional chalcogen compound of the present invention is low in cost, and it is estimated that the material cost needed to absorb 1g of iodine vapor is only 0.4 yuan, which has the potential for industrial application.
附图说明Description of drawings
图1为(NH 4) 2[Sn 3S 7]的结构示意图; Figure 1 is a schematic structural diagram of (NH 4 ) 2 [Sn 3 S 7 ];
图2为(NH 4) 2[Sn 3S 7]的结构中Sn原子与S原子组成的三角形节点; Figure 2 is a triangular node composed of Sn atoms and S atoms in the structure of (NH 4 ) 2 [Sn 3 S 7 ];
图3为(NH 4) 2[Sn 3S 7]的热重分析图; Fig. 3 is the thermogravimetric analysis diagram of (NH 4 ) 2 [Sn 3 S 7 ];
图4(a)为75℃下,(NH 4) 2[Sn 3S 7]对高浓度碘蒸气的吸附量随时间的变化图; Figure 4(a) is a graph of the adsorption capacity of (NH 4 ) 2 [Sn 3 S 7 ] for high-concentration iodine vapor versus time at 75°C;
图4(b)为吸附有碘的(NH 4) 2[Sn 3S 7]经长时间静置后的吸附量变化图; Figure 4(b) is a graph showing the change of adsorption amount of (NH 4 ) 2 [Sn 3 S 7 ] with iodine adsorbed after standing for a long time;
图5是在25℃和75℃下,(NH 4) 2[Sn 3S 7]对低浓度碘蒸气的平衡吸附量图。 Fig. 5 is a graph showing the equilibrium adsorption capacity of (NH 4 ) 2 [Sn 3 S 7 ] for low-concentration iodine vapor at 25°C and 75°C.
具体实施方式Detailed ways
下面结合附图和具体实施例对本发明作进一步说明,以使本领域的技术人员可以更好地理解本发明并能予以实施,但所举实施例不作为对本发明的限定。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.
除非另有定义,本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本发明的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used in the description of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
下述实施例中所使用的实验方法如无特殊说明,均为常规方法,所用的材料、试剂等,如无特殊说明,均可从商业途径得到。The experimental methods used in the following examples are conventional methods unless otherwise specified, and the materials and reagents used can be obtained from commercial sources unless otherwise specified.
实施例1:合成二维硫属化合物(NH 4) 2[Sn 3S 7] Example 1: Synthesis of two-dimensional chalcogenide (NH 4 ) 2 [Sn 3 S 7 ]
将3mmol锡粉、7mmol硫粉加入到反应容器中,再加入4mL二亚乙基三胺,密闭反应容器,设置反应温度为180℃,反应4天,程序降温12h至室温。反应结束后,用水洗涤反应产物后得到黄色晶体,记为SCU-SnS。Add 3mmol of tin powder and 7mmol of sulfur powder into the reaction vessel, then add 4mL of diethylenetriamine, seal the reaction vessel, set the reaction temperature to 180°C, react for 4 days, and cool down to room temperature for 12 hours. After the reaction, the reaction product was washed with water to obtain yellow crystals, which were designated as SCU-SnS.
对得到的黄色晶体进行X射线单晶衍射试验,其晶体学参数如表1所示。The obtained yellow crystals were subjected to X-ray single crystal diffraction test, and the crystallographic parameters are shown in Table 1.
表1二维硫属化合物(NH 4) 2[Sn 3S 7]的晶体学参数 Table 1 Crystallographic parameters of two-dimensional chalcogenides (NH 4 ) 2 [Sn 3 S 7 ]
Figure PCTCN2021141923-appb-000003
Figure PCTCN2021141923-appb-000003
Figure PCTCN2021141923-appb-000004
Figure PCTCN2021141923-appb-000004
图1-2为二维硫属化合物的结构示意图。从图中可以看出,Sn原子与S原子形成一个类似于三角形的节点,节点与节点之间通过S原子相互连接形成一个层状结构,层与层之间相互堆积形成带负电的框架结构,铵根离子存在于(NH 4) 2[Sn 3S 7]的孔道中,起到了平衡电荷的作用。 Figure 1-2 is a schematic diagram of the structure of two-dimensional chalcogenides. It can be seen from the figure that Sn atoms and S atoms form a triangle-like node, and the nodes are connected to each other through S atoms to form a layered structure, and the layers are stacked to form a negatively charged frame structure. Ammonium ions exist in the pores of (NH 4 ) 2 [Sn 3 S 7 ], and play a role in balancing charges.
对得到的二维硫属化合物进行热重测试(TG),TG测试在氮气氛围下进行,测试的温度范围为30℃到900℃,升温速率为10℃/min,结果如图3所示。The obtained two-dimensional chalcogenides were subjected to a thermogravimetric test (TG). The TG test was carried out in a nitrogen atmosphere. The temperature range of the test was 30°C to 900°C, and the heating rate was 10°C/min. The results are shown in Figure 3.
从图3中可以看出,在氮气氛围下,二维硫属化合物能在200℃下保持稳定,这表明该材料具有良好的热稳定性。在30℃到100℃之间减少的质量主要是由于SCU-SnS表面的水分子挥发所导致的,在200℃左右结构发生坍塌。It can be seen from Figure 3 that the 2D chalcogenides are stable at 200 °C under nitrogen atmosphere, which indicates that the material has good thermal stability. The mass reduction between 30°C and 100°C is mainly due to the volatilization of water molecules on the surface of SCU-SnS, and the structure collapses at around 200°C.
实施例2Example 2
在75℃下,将二维硫属化合物材料置于高浓度的碘蒸气(16000ppm)氛围下,每间隔一段时间测试材料对碘蒸气的吸附量,所得结果如图4(a)所示。At 75°C, the two-dimensional chalcogenide material was placed in a high-concentration iodine vapor (16000ppm) atmosphere, and the adsorption capacity of the material to iodine vapor was tested at intervals. The results are shown in Figure 4(a).
从图4(a)中可以看出,随着反应时间的不断增加,材料上碘的吸附量先迅速上升后逐渐趋于平缓,最后达到平衡值,其吸附量达到了6.8g/g,是目前报道的吸附容量最高的无机材料。It can be seen from Figure 4(a) that as the reaction time continues to increase, the adsorption amount of iodine on the material first increases rapidly and then gradually becomes flat, and finally reaches an equilibrium value, and the adsorption amount reaches 6.8 g/g, which is The inorganic material with the highest adsorption capacity reported so far.
实施例3Example 3
将吸附有碘的二维硫属化合物材料静置,每间隔一段时间测试材料上碘的吸附量的变化,所得结果如图4(b)所示。The two-dimensional chalcogenide material adsorbed with iodine was left to stand, and the change of the adsorption amount of iodine on the material was tested at intervals, and the obtained results are shown in Fig. 4(b).
从图4(b)中可以看出,吸附有碘的二维硫属化合物材料在静置6天后,材料上碘的保留率仍接近100%。这表明该二维硫属化合物材料不会因为长时间静置而出现碘的脱附现象,具有良好的吸附稳定性。It can be seen from Figure 4(b) that the retention rate of iodine on the material is still close to 100% after standing for 6 days on the two-dimensional chalcogenide material adsorbed with iodine. This shows that the two-dimensional chalcogenide material will not desorb iodine due to standing for a long time, and has good adsorption stability.
实施例4Example 4
分别在25℃和75℃下,将二维硫属化合物材料置于浓度为400ppm碘蒸气(接近乏 燃料后处理过程中碘蒸气的浓度)氛围下,测试材料对碘蒸气的平衡吸附量,所得结果如附图5所示。At 25°C and 75°C respectively, the two-dimensional chalcogenide material was placed in an atmosphere with a concentration of 400ppm iodine vapor (close to the concentration of iodine vapor in the process of spent fuel reprocessing), and the equilibrium adsorption capacity of the material to iodine vapor was tested, and the obtained The results are shown in Figure 5.
结果显示,该材料在25℃、浓度为400ppm的碘蒸气条件下,对碘蒸气的吸附量达到了2.38g/g,在75℃(接近乏燃料后处理尾气装置尾端的温度)、400ppm的碘蒸气浓度下,对碘蒸气的吸附量达到了2.35g/g。The results show that the material has an iodine vapor adsorption capacity of 2.38g/g at 25°C and a concentration of 400ppm iodine vapor. Under the vapor concentration, the adsorption capacity of iodine vapor reached 2.35g/g.
综上,本发明提供的新型二维硫属化合物(NH 4) 2[Sn 3S 7],对于碘蒸气具有良好的吸收效果,且不会因为长时间静置而出现碘的脱附现象,可应用于乏燃料后处理过程中放射性碘蒸气的去除。 In summary, the novel two-dimensional chalcogen compound (NH 4 ) 2 [Sn 3 S 7 ] provided by the present invention has a good absorption effect on iodine vapor, and does not cause iodine desorption due to standing for a long time. It can be applied to the removal of radioactive iodine vapor in the process of spent fuel reprocessing.
以上所述实施例仅是为充分说明本发明而所举的较佳的实施例,本发明的保护范围不限于此。本技术领域的技术人员在本发明基础上所作的等同替代或变换,均在本发明的保护范围之内。本发明的保护范围以权利要求书为准。The above-mentioned embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or transformations made by those skilled in the art on the basis of the present invention are all within the protection scope of the present invention. The protection scope of the present invention shall be determined by the claims.

Claims (10)

  1. 二维硫属化合物,其特征在于,所述二维硫属化合物为晶态材料,化学式为(NH 4) 2[Sn 3S 7],晶胞参数为:
    Figure PCTCN2021141923-appb-100001
    α=β=90°,γ=120°,空间群为
    Figure PCTCN2021141923-appb-100002
    The two-dimensional chalcogen compound is characterized in that the two-dimensional chalcogen compound is a crystalline material, the chemical formula is (NH 4 ) 2 [Sn 3 S 7 ], and the unit cell parameters are:
    Figure PCTCN2021141923-appb-100001
    α=β=90°, γ=120°, the space group is
    Figure PCTCN2021141923-appb-100002
  2. 根据权利要求1所述的二维硫属化合物的制备方法,其特征在于,包括以下步骤:在150℃~180℃下,使锡源和硫单质于二亚乙基三胺中反应,得到所述二维硫属化合物;其中,所述锡源与硫单质的摩尔比为1:1~5。The preparation method of the two-dimensional chalcogen compound according to claim 1 is characterized in that it comprises the following steps: at 150°C to 180°C, reacting the tin source and sulfur element in diethylenetriamine to obtain the obtained The two-dimensional chalcogen compound; wherein, the molar ratio of the tin source to the sulfur element is 1:1-5.
  3. 根据权利要求2所述的二维硫属化合物的制备方法,其特征在于,所述反应于密封环境下进行。The method for preparing two-dimensional chalcogenides according to claim 2, wherein the reaction is carried out in a sealed environment.
  4. 根据权利要求2所述的二维硫属化合物的制备方法,其特征在于,所述锡源为锡粉或四氯化锡。The method for preparing two-dimensional chalcogenides according to claim 2, wherein the tin source is tin powder or tin tetrachloride.
  5. 根据权利要求2所述的二维硫属化合物的制备方法,其特征在于,所述硫单质为升华硫。The method for preparing two-dimensional chalcogenides according to claim 2, wherein the sulfur element is sublimed sulfur.
  6. 根据权利要求2所述的二维硫属化合物的制备方法,其特征在于,所述锡源与硫单质的摩尔比为3:7。The method for preparing two-dimensional chalcogenides according to claim 2, wherein the molar ratio of the tin source to the sulfur element is 3:7.
  7. 根据权利要求2所述的二维硫属化合物的制备方法,其特征在于,反应时间为3~7天。The method for preparing two-dimensional chalcogenides according to claim 2, characterized in that the reaction time is 3-7 days.
  8. 权利要求1所述的二维硫属化合物在吸附碘蒸气中的应用。The application of the two-dimensional chalcogen compound described in claim 1 in the adsorption of iodine vapor.
  9. 根据权利要求8所述的应用,其特征在于,所述碘蒸气为放射性碘蒸气。The application according to claim 8, characterized in that the iodine vapor is radioactive iodine vapor.
  10. 根据权利要求8所述的应用,其特征在于,所述二维硫属化合物在25℃、400ppm的碘蒸气浓度下,对碘蒸气的吸附量达到了2.38g/g,在75℃、400ppm的碘蒸气浓度下,对碘蒸气的吸附量达到了2.35g/g。The application according to claim 8, characterized in that, at 25°C and 400ppm iodine vapor concentration, the two-dimensional chalcogen compound has an adsorption capacity of 2.38g/g for iodine vapor, and at 75°C and 400ppm Under the concentration of iodine vapor, the adsorption capacity of iodine vapor reached 2.35g/g.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104399538A (en) * 2014-09-24 2015-03-11 中国科学院福建物质结构研究所 Compound, preparation method and application thereof as ion exchange material
CN105754584A (en) * 2016-04-08 2016-07-13 苏州大学 Preparation method and application of metal sulfur-group compound multifunctional nano probe
US20200198983A1 (en) * 2018-12-21 2020-06-25 The University Of Melbourne Czts precursor inks and methods for preparing czts thin films and czts-based-devices
CN113351186A (en) * 2021-06-18 2021-09-07 海南希源化工科技有限公司 Preparation method of iodine adsorbent, obtained product and application

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933688A (en) * 1974-07-12 1976-01-20 Exxon Research And Engineering Company Method for lithiating metal chalcogenides and intercalated products thereof
US20130252798A1 (en) * 2012-03-21 2013-09-26 National Tsing Hua University Metallic sulfide photocatalyst for carbon dioxide reduction and the preparation for the same
CN105080623B (en) * 2015-08-14 2018-02-16 中国科学院福建物质结构研究所 A kind of ion-exchanger for being used for separation and/or Extraction of rare earth element
CN107952489A (en) * 2017-12-12 2018-04-24 淮北师范大学 A kind of synthetic method of organic inorganic hybridization photochemical catalyst
CN111135875A (en) * 2019-12-20 2020-05-12 中国科学院福建物质结构研究所 Composite ion exchanger, preparation method and application thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104399538A (en) * 2014-09-24 2015-03-11 中国科学院福建物质结构研究所 Compound, preparation method and application thereof as ion exchange material
CN105754584A (en) * 2016-04-08 2016-07-13 苏州大学 Preparation method and application of metal sulfur-group compound multifunctional nano probe
US20200198983A1 (en) * 2018-12-21 2020-06-25 The University Of Melbourne Czts precursor inks and methods for preparing czts thin films and czts-based-devices
CN113351186A (en) * 2021-06-18 2021-09-07 海南希源化工科技有限公司 Preparation method of iodine adsorbent, obtained product and application

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WANG XINA, SHENG TIAN-LUA, XIANG SHENG-CHANGA, HU SHENG-MINA, FU RUI-BIAOA, WU XIN-TAOA: "A 2D Layered Thiostannate: Synthesis and Crystal Structure of [tmdpH2]Sn3S7", JIEGOU HUAXUE - CHINESE JOURNAL OF STRUCTURAL CHEMISTRY, ZHONGGUO KEXUEYUAN FUJIAN WUZHI JIEGOU YANJIUSUO, CN, vol. 29, no. 2, 15 February 2010 (2010-02-15), CN , pages 260 - 264, XP009545775, ISSN: 0254-5861, DOI: 10.14102/j.cnki.0254-5861.2010.02.017 *

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