WO2023062474A1 - 発光デバイス、表示装置、電子機器、発光装置、照明装置 - Google Patents

発光デバイス、表示装置、電子機器、発光装置、照明装置 Download PDF

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WO2023062474A1
WO2023062474A1 PCT/IB2022/059399 IB2022059399W WO2023062474A1 WO 2023062474 A1 WO2023062474 A1 WO 2023062474A1 IB 2022059399 W IB2022059399 W IB 2022059399W WO 2023062474 A1 WO2023062474 A1 WO 2023062474A1
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Prior art keywords
layer
light
emitting device
electrode
refractive index
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English (en)
French (fr)
Japanese (ja)
Inventor
渡部剛吉
大澤信晴
瀬尾哲史
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to CN202280068197.5A priority Critical patent/CN118077314A/zh
Priority to KR1020247015419A priority patent/KR20240090376A/ko
Priority to JP2023554090A priority patent/JPWO2023062474A1/ja
Priority to US18/700,081 priority patent/US20240349531A1/en
Publication of WO2023062474A1 publication Critical patent/WO2023062474A1/ja
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    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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    • H05B33/00—Electroluminescent light sources
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    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H05B33/24—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
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    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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    • H10K50/14—Carrier transporting layers
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K85/649—Aromatic compounds comprising a hetero atom
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    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
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    • H10K50/17—Carrier injection layers
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    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

Definitions

  • One embodiment of the present invention relates to a light-emitting device, a display device, an electronic device, a light-emitting device, a lighting device, or a semiconductor device.
  • one embodiment of the present invention is not limited to the above technical field.
  • a technical field of one embodiment of the invention disclosed in this specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition of matter. Therefore, the technical fields of one embodiment of the present invention disclosed in this specification more specifically include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, driving methods thereof, or manufacturing methods thereof; can be mentioned as an example.
  • An object of one embodiment of the present invention is to provide a novel light-emitting device with excellent convenience, usefulness, or reliability. Another object is to provide a novel display device that is highly convenient, useful, or reliable. Another object is to provide a novel electronic device that is highly convenient, useful, or reliable. Another object is to provide a novel light-emitting device that is highly convenient, useful, or reliable. Another object is to provide a novel lighting device that is highly convenient, useful, or reliable. Another object is to provide a novel light-emitting device, a novel display device, a novel electronic device, a novel light-emitting device, a novel lighting device, or a novel semiconductor device.
  • One embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, a first layer, a second layer, and a third layer.
  • the first layer is sandwiched between the first electrode and the second electrode, the second layer is sandwiched between the second electrode and the first layer, and the third layer is sandwiched between the second electrode and the second electrode. and the first layer.
  • the first layer comprises a first luminescent material, the first luminescent material having an emission spectrum peaking at wavelength ⁇ 1, the first layer having an ordinary refractive index n1 Prepare.
  • the second layer comprises a second luminescent material, the second luminescent material having an emission spectrum peaking at wavelength ⁇ 2, the second layer having an ordinary refractive index n2 Prepare.
  • the third layer has an ordinary refractive index n31 lower than the ordinary refractive index n1 at wavelength ⁇ 1, and the third layer has an ordinary refractive index n32 lower than the ordinary refractive index n2 at wavelength ⁇ 2.
  • Another embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, a first layer, a second layer, and a third layer.
  • the first layer is sandwiched between the first electrode and the second electrode, the second layer is sandwiched between the second electrode and the first layer, and the third layer is sandwiched between the second electrode and the second electrode. and the first layer.
  • the first layer comprises a first emissive material and a first host material, the first emissive material having an emission spectrum peaking at wavelength ⁇ 1 and the first layer in the film state.
  • the host material has an ordinary refractive index n1 at wavelength ⁇ 1.
  • the second layer comprises a second emissive material and a second host material, the second emissive material having an emission spectrum peaking at wavelength ⁇ 2, and the second layer in the form of a film.
  • the host material has an ordinary refractive index n2 at wavelength ⁇ 2.
  • the third layer has an ordinary refractive index n31 lower than the ordinary refractive index n1 at wavelength ⁇ 1, and the third layer has an ordinary refractive index n32 lower than the ordinary refractive index n2 at wavelength ⁇ 2.
  • one aspect of the present invention is the light-emitting device described above, wherein the third layer has an ordinary refractive index of 1.50 to 1.75 for light having a wavelength of 455 nm or more and 465 nm or less. .
  • Another aspect of the present invention is the light-emitting device, wherein the third layer has an ordinary refractive index of 1.45 to 1.70 with respect to light with a wavelength of 633 nm.
  • one aspect of the present invention provides a distance d1 between the third layer and the central plane of the first layer, and a distance d1 between the third layer and the central plane of the second layer.
  • d2 and the third layer has a thickness t3.
  • the distance d1, the distance d2, the thickness t3, the wavelength ⁇ 1, the wavelength ⁇ 2, the ordinary refractive index n1, the ordinary refractive index n2, the ordinary refractive index n31, and the ordinary refractive index n32 are the following formulas (1) and (2) are in a relationship that satisfies
  • Another aspect of the present invention is the light-emitting device described above, in which both the wavelength ⁇ 1 and the wavelength ⁇ 2 are in the range of 430 nm or more and 490 nm or less.
  • Another aspect of the present invention is the above light-emitting device, wherein the second light-emitting material is the same material as the first light-emitting material.
  • the light emitted from the first layer and the light emitted from the second layer can be efficiently extracted. Also, a light-emitting device with a high blue index can be realized. As a result, it is possible to provide a novel light-emitting device with excellent convenience, usefulness or reliability.
  • one embodiment of the present invention is the above light-emitting device having a fourth layer.
  • the fourth layer sandwiched between the first electrode and the first layer, the fourth layer having an ordinary refractive index n41 lower than the ordinary refractive index n1 at wavelength ⁇ 1, the fourth layer comprising: It has an ordinary refractive index n42 that is lower than the ordinary refractive index n2 at the wavelength ⁇ 2.
  • one aspect of the present invention is the above light-emitting device, wherein the fourth layer has an ordinary refractive index of 1.50 to 1.75 for light with a wavelength of 455 nm or more and 465 nm or less. be.
  • Another aspect of the present invention is the light-emitting device described above, wherein the fourth layer has an ordinary refractive index of 1.45 or more and 1.70 or less for light with a wavelength of 633 nm.
  • Another aspect of the present invention is the light-emitting device described above, in which the fourth layer contains the same material as the third layer.
  • Another aspect of the present invention is the above light-emitting device having a fifth layer.
  • a fifth layer is sandwiched between the second layer and the first layer, the fifth layer supplying holes to the second layer and electrons to the first layer.
  • one aspect of the present invention is the light-emitting device described above, wherein the third layer is sandwiched between the second layer and the fifth layer.
  • Another embodiment of the present invention is a display device including a first light-emitting device and a second light-emitting device.
  • the first light-emitting device has the structure described above, and the fifth layer contains an electron-accepting substance.
  • a second light emitting device is adjacent to the first light emitting device, the second light emitting device comprising a third electrode, a fourth electrode and a sixth layer.
  • the third electrode has a gap with the first electrode.
  • a sixth layer is sandwiched between the third electrode and the fourth electrode, the sixth layer comprising an electron-accepting material.
  • the sixth layer has a region having a thickness smaller than that of the fifth layer between itself and the fifth layer, and the region overlaps with the gap.
  • Another embodiment of the present invention is a display device including a first light-emitting device and a second light-emitting device.
  • the first light-emitting device has the above configuration, and the fifth layer contains an organic compound or transition metal oxide containing a halogen group or a cyano group.
  • a second light emitting device is adjacent to the first light emitting device, the second light emitting device comprising a third electrode, a fourth electrode and a sixth layer.
  • the third electrode has a gap with the first electrode.
  • a sixth layer is sandwiched between the third electrode and the fourth electrode, the sixth layer comprising an organic compound or transition metal oxide containing a halogen group or a cyano group.
  • the sixth layer has a region having a thickness smaller than that of the fifth layer between itself and the fifth layer, and the region overlaps with the gap.
  • Another embodiment of the present invention is a display device including any of the above light-emitting devices and a transistor or a substrate.
  • Another embodiment of the present invention is an electronic device including any of the above display devices, a sensor, an operation button, a speaker, or a microphone.
  • Another embodiment of the present invention is a light-emitting device including any of the above light-emitting devices and a transistor or a substrate.
  • Another embodiment of the present invention is a lighting device including the above light-emitting device and a housing.
  • the light-emitting device in this specification includes an image display device using a light-emitting device.
  • a module in which a connector such as an anisotropic conductive film or TCP (Tape Carrier Package) is attached to the light emitting device a module in which a printed wiring board is provided at the end of the TCP, or a COG (Chip On Glass) method for the light emitting device
  • a module in which an IC (integrated circuit) is directly mounted by a method may also be included in the light emitting device.
  • lighting fixtures and the like may have light emitting devices.
  • one embodiment of the present invention can provide a novel light-emitting device with excellent convenience, usefulness, or reliability. Further, one embodiment of the present invention can provide a novel display device that is highly convenient, useful, or reliable. Further, one embodiment of the present invention can provide a novel electronic device that is highly convenient, useful, or reliable. Further, one embodiment of the present invention can provide a novel light-emitting device that is highly convenient, useful, or highly reliable. Further, one embodiment of the present invention can provide a novel lighting device with excellent convenience, usefulness, or reliability. Also, a novel light-emitting device can be provided. Also, a novel display device can be provided. Also, a novel electronic device can be provided. Also, a novel light-emitting device can be provided. Also, a novel lighting device can be provided. Also, a novel semiconductor device can be provided.
  • FIG. 1A and 1B are diagrams illustrating the configuration of a light emitting device according to an embodiment.
  • FIG. 2 is a diagram illustrating the configuration of the light emitting device according to the embodiment.
  • FIG. 3 is a diagram illustrating the configuration of a light-emitting device according to an embodiment;
  • FIG. 4 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 5 is a diagram illustrating the configuration of the display device according to the embodiment.
  • 6A and 6B are conceptual diagrams of active matrix light emitting devices.
  • 7A and 7B are conceptual diagrams of an active matrix light emitting device.
  • FIG. 8 is a conceptual diagram of an active matrix type light emitting device.
  • 9A and 9B are conceptual diagrams of a passive matrix light emitting device.
  • FIG. 10A and 10B are diagrams showing an illumination device.
  • 11A to 11D are diagrams showing electronic devices.
  • 12A to 12C are diagrams showing electronic equipment.
  • FIG. 13 is a diagram showing an illumination device.
  • FIG. 14 is a diagram showing an illumination device.
  • FIG. 15 is a diagram showing an in-vehicle display device and a lighting device.
  • 16A to 16C are diagrams showing electronic equipment.
  • 17A and 17B are diagrams illustrating the configuration of a light-emitting device according to an example.
  • FIG. 18 is a diagram illustrating the current density-luminance characteristics of the light-emitting device according to the example.
  • FIG. 19 is a diagram illustrating luminance-current efficiency characteristics of a light-emitting device according to an example.
  • FIG. 20 is a diagram illustrating voltage-luminance characteristics of a light-emitting device according to an example.
  • FIG. 21 is a diagram illustrating voltage-current characteristics of a light-emitting device according to an example.
  • FIG. 22 is a diagram illustrating luminance-blue index characteristics of a light-emitting device according to an example.
  • FIG. 23 is a diagram explaining the emission spectrum of the light emitting device according to the example.
  • FIG. 24 is a diagram for explaining temporal changes in normalized luminance of the light-emitting device according to the example.
  • a light-emitting device of one embodiment of the present invention includes a first electrode, a second electrode, a first layer, a second layer, and a third layer.
  • the first layer is sandwiched between the first electrode and the second electrode, the second layer is sandwiched between the second electrode and the first layer, and the third layer is sandwiched between the second electrode and the second electrode. and the first layer.
  • the first layer comprises a first luminescent material, the first luminescent material having an emission spectrum peaking at wavelength ⁇ 1, the first layer having an ordinary refractive index n1 Prepare.
  • the second layer comprises a second luminescent material, the second luminescent material having an emission spectrum peaking at wavelength ⁇ 2, the second layer having an ordinary refractive index n2 Prepare.
  • the third layer has an ordinary refractive index n31 lower than the ordinary refractive index n1 at wavelength ⁇ 1, and the third layer has an ordinary refractive index n32 lower than the ordinary refractive index n2 at wavelength ⁇ 2.
  • FIG. 1A is a cross-sectional view illustrating the structure of a light-emitting device of one embodiment of the present invention.
  • FIG. 1B is a schematic diagram illustrating the emission spectrum of a light-emitting material used for the light-emitting device of one embodiment of the present invention.
  • a device manufactured using a metal mask or FMM may be referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • a structure in which a light-emitting layer is separately formed or a light-emitting layer is separately painted in each color light-emitting device is referred to as SBS (Side By Side) structure.
  • SBS Side By Side
  • a light-emitting device capable of emitting white light is sometimes referred to as a white light-emitting device.
  • a white light emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.
  • light-emitting devices can be broadly classified into a single structure and a tandem structure.
  • a single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers.
  • the light-emitting unit preferably includes one or more light-emitting layers.
  • the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light.
  • a device with a tandem structure preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit includes one or more light-emitting layers.
  • each light-emitting unit includes one or more light-emitting layers.
  • a structure in which white light emission is obtained by combining light from the light emitting layers of a plurality of light emitting units may be employed. Note that the structure for obtaining white light emission is the same as the structure of the single structure.
  • the white light emitting device when comparing the white light emitting device (single structure or tandem structure) and the light emitting device having the SBS structure, the light emitting device having the SBS structure can consume less power than the white light emitting device. If it is desired to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, the white light emitting device is preferable because the manufacturing process is simpler than that of the SBS structure light emitting device, so that the manufacturing cost can be lowered or the manufacturing yield can be increased.
  • a light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a layer 111X, a layer 111X2, and a layer LN (see FIG. 1A).
  • the layer 111X has a function of emitting light ELX
  • the layer 111X2 has a function of emitting light ELX2.
  • Layer 111X is sandwiched between electrode 551X and electrode 552X, and layer 111X2 is sandwiched between electrode 552X and layer 111X. Also, layer LN is sandwiched between layer 111X2 and layer 111X.
  • Layer 111X includes luminescent material EM1.
  • the luminescent material EM1 has an emission spectrum ⁇ 1 peaking at wavelength ⁇ 1 (see FIG. 1B).
  • the maximum of an emission spectrum is called a peak.
  • the wavelength ⁇ 1 can be determined from the emission spectrum maximum of the solution of the luminescent material EM1.
  • an organic solvent such as toluene can be used to prepare a solution of the luminescent material EM1.
  • the wavelength ⁇ 1 can be determined from the spectral maximum of the light ELX emitted from the light emitting device 550X.
  • the layer 111X has an ordinary refractive index n1 at the wavelength ⁇ 1.
  • the layer 111X has an ordinary refractive index of 1.75 or more and 2.1 or less with respect to light having a wavelength of 455 nm or more and 465 nm or less, for example.
  • it has an ordinary refractive index of 1.70 or more and 2.05 or less with respect to light with a wavelength of 633 nm.
  • the refractive index for ordinary light and the refractive index for extraordinary light may differ. If the thin film to be measured is in such a state, anisotropic analysis can be performed to separate the ordinary refractive index and the extraordinary refractive index and calculate each refractive index. In this specification, when the measured material has both an ordinary refractive index and an extraordinary refractive index, the ordinary refractive index is used as an index. Also, the refractive index can be measured using, for example, a spectroscopic ellipsometer.
  • a light-emitting material or a light-emitting material and a host material, can be used for layer 111X.
  • the layer 111X can be called a light-emitting layer. Note that a structure in which the layer 111X is arranged in a region where holes and electrons recombine is preferable. As a result, energy generated by recombination of carriers can be efficiently converted into light and emitted.
  • layer 111X comprises a luminescent material EM1 and a host material HO1
  • the luminescent material EM1 has an emission spectrum with a maximum at wavelength ⁇ 1
  • the host material HO1 in the film state has a wavelength ⁇ 1 of It has an ordinary refractive index n1.
  • the layer 111X away from the metal used for the electrode or the like. As a result, it is possible to suppress the quenching phenomenon caused by the metal used for the electrode or the like.
  • the layer 111X at an appropriate position according to the emission wavelength by adjusting the distance from the reflective electrode or the like to the layer 111X.
  • the amplitude can be strengthened by using the interference phenomenon between the light reflected by the electrode and the like and the light emitted from the layer 111X.
  • the spectrum of light can be narrowed by intensifying light of a predetermined wavelength.
  • bright luminescent colors can be obtained with high intensity.
  • the layers 111X can be placed at appropriate locations between the electrodes and the like to form a microresonator structure (microcavity).
  • a fluorescent light-emitting substance a phosphorescent light-emitting substance, or a substance exhibiting thermally activated delayed fluorescence (TADF) (also referred to as a TADF material) can be used as the light-emitting material.
  • TADF thermally activated delayed fluorescence
  • a fluorescent emitting material can be used for layer 111X.
  • the layer 111X can use a fluorescent light-emitting substance exemplified below. Note that the layer 111X is not limited to this, and various known fluorescent light-emitting materials can be used for the layer 111X.
  • condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferable because of their high hole-trapping properties and excellent luminous efficiency or reliability.
  • N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine abbreviation: 2DPAPPA
  • N,N,N' ,N′,N′′,N′′,N′′′,N′′′-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetramine abbreviation: DBC1
  • DBC1 N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine
  • 2PCAPA N-[9,10-bis(1,1'-biphenyl-2 -yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine
  • 2PCABPhA N-(9,10-diphenyl-2-anthryl
  • DCM1 2-(2- ⁇ 2-[4-(dimethylamino)phenyl]ethenyl ⁇ -6-methyl-4H-pyran-4-ylidene)propanedinitrile
  • DCM2 2- ⁇ 2-methyl- 6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolidin-9-yl)ethenyl]-4H-pyran-4-ylidene ⁇ propandinitrile
  • DCM2 N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine
  • p-mPhTD 7,14-diphenyl-N,N,N',N'-tetrakis
  • 4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine abbreviation: p-mPhAFD
  • a phosphorescent emissive material can be used for layer 111X.
  • a phosphorescent substance given below can be used for the layer 111X.
  • the layer 111X is not limited to this, and various known phosphorescent light-emitting substances can be used for the layer 111X.
  • an organometallic iridium complex having a 4H-triazole skeleton, an organometallic iridium complex having a 1H-triazole skeleton, an organometallic iridium complex having an imidazole skeleton, and an organometallic iridium having a phenylpyridine derivative having an electron-withdrawing group as a ligand A complex, an organometallic iridium complex having a pyrimidine skeleton, an organometallic iridium complex having a pyrazine skeleton, an organometallic iridium complex having a pyridine skeleton, a rare earth metal complex, a platinum complex, or the like can be used for the layer 111X.
  • Organometallic iridium complexes having a 4H-triazole skeleton include tris ⁇ 2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazole-3 -yl- ⁇ N2]phenyl- ⁇ C ⁇ iridium(III) (abbreviation: [Ir(mpptz-dmp) 3 ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium (III) (abbreviation: [Ir(Mptz) 3 ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium (III) (abbreviation: [Ir(iPrptz-3b) 3 ]), etc. can be used.
  • organometallic iridium complexes having a 1H-triazole skeleton examples include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium (III) (abbreviation: [Ir(Mptz1-mp) 3 ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium (III) (abbreviation: [Ir(Prptz1-Me) 3 ) ]), etc. can be used.
  • organometallic iridium complexes having an imidazole skeleton examples include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi) 3 ]) , tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium (III) (abbreviation: [Ir(dmpimpt-Me) 3 ]), etc. can be used.
  • organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand include bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium(III) tetrakis ( 1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium(III) picolinate (abbreviation: FIrpic), bis ⁇ 2-[3 ',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2 ' ⁇ iridium(III) picolinate (abbreviation: [Ir( CF3ppy ) 2 (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N, C2' ]i
  • Organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mpm) 3 ]), tris(4-t-butyl-6 -phenylpyrimidinato)iridium (III) (abbreviation: [Ir(tBuppm) 3 ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium (III) (abbreviation: [Ir( mppm) 2 (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium (III) (abbreviation: [Ir(tBuppm) 2 (acac)]), (acetyl acetonato)bis[6-(2-norborny
  • organometallic iridium complexes having a pyrazine skeleton examples include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium (III) (abbreviation: [Ir(mppr-Me) 2 (acac) ]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) 2 (acac)]), etc. can be done.
  • organometallic iridium complexes having a pyridine skeleton examples include tris(2-phenylpyridinato-N,C2 ' )iridium(III) (abbreviation: [Ir(ppy) 3 ]), bis(2-phenylpyridina to-N,C2 ' )iridium(III) acetylacetonate (abbreviation: [Ir(ppy) 2 (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir (bzq) 2 (acac)]), tris(benzo[h]quinolinato)iridium (III) (abbreviation: [Ir(bzq) 3 ]), tris(2-phenylquinolinato-N,C 2′ )iridium ( III) (abbreviation: [Ir(pq) 3 ]), bis(2-phenylquinolinato-N
  • Rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac) 3 (Phen)]), and the like.
  • These compounds mainly emit green phosphorescence and have a peak emission wavelength between 500 nm and 600 nm. Also, an organometallic iridium complex having a pyrimidine skeleton is remarkably excellent in reliability or luminous efficiency.
  • organometallic iridium complexes having a pyrimidine skeleton examples include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) 2 (dibm)] ), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium (III) (abbreviation: [Ir(5mdppm) 2 (dpm)]), bis[4,6-di (naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm) 2 (dpm)]), and the like can be used.
  • organometallic iridium complexes having a pyrazine skeleton examples include (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium (III) (abbreviation: [Ir(tppr) 2 (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) 2 (dpm)]), (acetylacetonato)bis[2,3 -Bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) 2 (acac)]) and the like can be used.
  • Organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C2 ' )iridium(III) (abbreviation: [Ir(piq) 3 ]), bis(1-phenylisoquino linato-N,C2 ' )iridium(III) acetylacetonate (abbreviation: [Ir(piq) 2 (acac)]), and the like can be used.
  • rare earth metal complexes include tris(1,3-diphenyl-1,3-propanedionate)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) 3 (Phen)]), tris[1- (2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline) europium (III) (abbreviation: [Eu(TTA) 3 (Phen)]) and the like can be used.
  • PtOEP 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP) or the like can be used.
  • an organometallic iridium complex having a pyrazine skeleton provides red light emission with chromaticity suitable for use in display devices.
  • TADF material can be used for layer 111X.
  • a TADF material exemplified below can be used as a luminescent material.
  • Various known TADF materials can be used as the luminescent material without being limited to this.
  • a TADF material has a small difference between the S1 level and the T1 level, and can reverse intersystem crossing (up-convert) from a triplet excited state to a singlet excited state with a small amount of thermal energy. Thereby, a singlet excited state can be efficiently generated from a triplet excited state. Also, triplet excitation energy can be converted into luminescence.
  • an exciplex also called exciplex, exciplex, or Exciplex
  • an exciplex in which two kinds of substances form an excited state has an extremely small difference between the S1 level and the T1 level, and the triplet excitation energy is replaced by the singlet excitation energy. It functions as a TADF material that can be converted into
  • a phosphorescence spectrum observed at a low temperature may be used as an index of the T1 level.
  • a tangent line is drawn at the tail of the fluorescence spectrum on the short wavelength side
  • the energy of the wavelength of the extrapolated line is the S1 level
  • a tangent line is drawn at the tail of the phosphorescence spectrum on the short wavelength side
  • the extrapolation When the energy of the wavelength of the line is the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, more preferably 0.2 eV or less.
  • the S1 level of the host material is preferably higher than the S1 level of the TADF material.
  • the T1 level of the host material is preferably higher than the T1 level of the TADF material.
  • fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. can be used as the TADF material.
  • Metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can also be used as TADF materials. can.
  • protoporphyrin-tin fluoride complex SnF2 (Proto IX)
  • mesoporphyrin-tin fluoride complex SnF2 (Meso IX)
  • hematoporphyrin-tin fluoride which have the following structural formulas complex (SnF 2 (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF 2 (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF 2 (OEP)), ethioporphyrin- Tin fluoride complex (SnF 2 (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl 2 OEP), and the like can be used.
  • a heterocyclic compound having one or both of a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring can be used as the TADF material.
  • the heterocyclic compound has a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring, the heterocyclic compound has both high electron-transporting properties and high hole-transporting properties, which is preferable.
  • skeletons having a ⁇ -electron-deficient heteroaromatic ring a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are particularly preferable because they are stable and reliable.
  • a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are preferred because they have high electron acceptability and good reliability.
  • an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and reliable. It is preferred to have A dibenzofuran skeleton is preferable as the furan skeleton, and a dibenzothiophene skeleton is preferable as the thiophene skeleton.
  • an indole skeleton As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferred.
  • a substance in which a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring are directly bonded has both the electron-donating property of the ⁇ -electron-rich heteroaromatic ring and the electron-accepting property of the ⁇ -electron-deficient heteroaromatic ring. It is particularly preferable because it becomes stronger and the energy difference between the S1 level and the T1 level becomes smaller, so that thermally activated delayed fluorescence can be efficiently obtained.
  • An aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the ⁇ -electron-deficient heteroaromatic ring.
  • an aromatic amine skeleton, a phenazine skeleton, or the like can be used as the ⁇ -electron-rich skeleton.
  • the ⁇ -electron-deficient skeleton includes a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or borantrene, and a nitrile such as benzonitrile or cyanobenzene.
  • An aromatic ring or heteroaromatic ring having a group or a cyano group, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, or the like can be used.
  • a ⁇ -electron-deficient skeleton and a ⁇ -electron-rich skeleton can be used in place of at least one of the ⁇ -electron-deficient heteroaromatic ring and the ⁇ -electron-rich heteroaromatic ring.
  • a material having a carrier-transport property can be used as the host material.
  • a material having a hole-transporting property, a material having an electron-transporting property, a substance exhibiting thermally activated delayed fluorescence (TADF), a material having an anthracene skeleton, a mixed material, or the like can be used as the host material.
  • TADF thermally activated delayed fluorescence
  • a material having an anthracene skeleton a mixed material, or the like
  • a mixed material or the like.
  • TADF thermally activated delayed fluorescence
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property.
  • an amine compound or an organic compound having a ⁇ -electron rich heteroaromatic ring skeleton can be used as a material having a hole-transport property.
  • a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, and the like can be used.
  • a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability, high hole-transport properties, and contributes to reduction in driving voltage.
  • Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl )-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluorene-2 -yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3′-( 9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4′-(9-phenyl-9H-carba
  • Examples of compounds having a carbazole skeleton include 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis (3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), and the like can be used.
  • mCP 1,3-bis(N-carbazolyl)benzene
  • CBP 4,4′-di(N-carbazolyl)biphenyl
  • CzTP 3,6-bis (3,5-diphenylphenyl)-9-phenylcarbazole
  • PCCP 3,3′-bis(9-phenyl-9H-carbazole)
  • Compounds having a thiophene skeleton include, for example, 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4 -[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]- 6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), etc. can be used.
  • DBT3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzothiophene)
  • DBTFLP-III 2,8-diphenyl-4 -[4-(9-phenyl-9H-fluoren-9-yl)
  • Examples of compounds having a furan skeleton include 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4- ⁇ 3-[3- (9-phenyl-9H-fluoren-9-yl)phenyl]phenyl ⁇ dibenzofuran (abbreviation: mmDBFFLBi-II), and the like can be used.
  • DBF3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzofuran)
  • mmDBFFLBi-II 4- ⁇ 3-[3- (9-phenyl-9H-fluoren-9-yl)phenyl]phenyl ⁇ dibenzofuran
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.
  • metal complexes include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2 ), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2- (2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and the like can be used.
  • Examples of the organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton include a heterocyclic compound having a polyazole skeleton, a heterocyclic compound having a diazine skeleton, a heterocyclic compound having a pyridine skeleton, a heterocyclic compound having a triazine skeleton, and the like. can be used.
  • a heterocyclic compound having a diazine skeleton or a heterocyclic compound having a pyridine skeleton is preferable because of its high reliability.
  • a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has a high electron-transport property and can reduce driving voltage.
  • heterocyclic compounds having a polyazole skeleton examples include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4 -biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1 ,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H -carbazole (abbreviation: CO11), 2,2′,2′′-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-
  • heterocyclic compounds having a diazine skeleton examples include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3′-(dibenzo thiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[ f,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl) ) phenyl]pyrimidine (abbreviation:
  • Heterocyclic compounds having a pyridine skeleton include, for example, 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3 -pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like can be used.
  • 35DCzPPy 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine
  • TmPyPB 1,3,5-tri[3-(3 -pyridyl)phenyl]benzene
  • heterocyclic compounds having a triazine skeleton examples include 2-[3′-(9,9-dimethyl-9H-fluoren-2-yl)-1,1′-biphenyl-3-yl]-4,6- Diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1′-biphenyl)-4-yl]-4-phenyl-6-[9,9′-spirobi(9H-fluorene) -2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2- ⁇ 3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl] Phenyl ⁇ -4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTZn), 2- ⁇ 3-[3-(benzo[b]naphtho[1,2-d]fur
  • An organic compound having an anthracene skeleton can be used as the host material.
  • an organic compound having an anthracene skeleton is suitable. This makes it possible to realize a light-emitting device with good luminous efficiency and durability.
  • an organic compound having an anthracene skeleton an organic compound having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton is preferable because it is chemically stable.
  • the host material has a carbazole skeleton because the hole injection/transport properties are enhanced.
  • the highest occupied molecular orbital (HOMO) level becomes shallower than that of carbazole by about 0.1 eV, making it easier for holes to enter, and further increasing the hole transportability. It is suitable because it is excellent in heat resistance and has high heat resistance.
  • a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.
  • a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, and a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton are It is preferable as a host material.
  • 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan abbreviation: 2mBnfPPA
  • 9-phenyl-10- ⁇ 4-( 9-phenyl-9H-fluoren-9-yl)biphenyl-4′-yl ⁇ anthracene abbreviation: FLPPA
  • 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene abbreviation: ⁇ N- ⁇ NPAnth
  • PCzPA 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole
  • CzPA 7-[4-[4-[4-(10-phenyl-9-anthracenyl)phenyl ]-9H-carbazole
  • CzPA 7-[4-[4-
  • CzPA, cgDBCzPA, 2mBnfPPA and PCzPA exhibit very good properties.
  • a TADF material can be used as the host material.
  • triplet excitation energy generated in the TADF material can be converted into singlet excitation energy by reverse intersystem crossing. Additionally, the excitation energy can be transferred to the luminescent material.
  • the TADF material acts as an energy donor and the luminescent material acts as an energy acceptor. This can increase the luminous efficiency of the light emitting device.
  • the S1 level of the TADF material is preferably higher than the S1 level of the fluorescent material.
  • the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent material. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent emitter.
  • a TADF material that emits light that overlaps the wavelength of the absorption band on the lowest energy side of the fluorescent light-emitting substance.
  • the fluorescent light-emitting substance has a protective group around the luminophore (skeleton that causes light emission) of the fluorescent light-emitting substance.
  • the protecting group is preferably a substituent having no ⁇ bond, preferably a saturated hydrocarbon.
  • an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cyclo Examples include an alkyl group and a trialkylsilyl group having 3 to 10 carbon atoms, and it is more preferable to have a plurality of protecting groups.
  • Substituents that do not have a ⁇ -bond have poor carrier-transporting functions, and can increase the distance between the TADF material and the luminophore of the fluorescent emitter with little effect on carrier transport or carrier recombination. .
  • the luminophore refers to an atomic group (skeleton) that causes luminescence in a fluorescent light-emitting substance.
  • the luminophore preferably has a skeleton having a ⁇ bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring.
  • the condensed aromatic ring or condensed heteroaromatic ring includes a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, and the like.
  • a naphthalene skeleton, anthracene skeleton, fluorene skeleton, chrysene skeleton, triphenylene skeleton, tetracene skeleton, pyrene skeleton, perylene skeleton, coumarin skeleton, quinacridone skeleton, and naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield. .
  • TADF material that can be used as a light-emitting material can be used as a host material.
  • composition example 1 of mixed material A material in which a plurality of kinds of substances are mixed can be used as the host material.
  • a material having an electron-transporting property and a material having a hole-transporting property can be used as a mixed material.
  • composition example 2 of mixed material A material mixed with a phosphorescent substance can be used as the host material.
  • a phosphorescent light-emitting substance can be used as an energy donor that provides excitation energy to a fluorescent light-emitting substance when a fluorescent light-emitting substance is used as the light-emitting substance.
  • composition example 3 of mixed material A mixed material containing a material that forms an exciplex can be used as the host material.
  • a material in which the emission spectrum of the formed exciplex overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance can be used as the host material.
  • the drive voltage can be suppressed.
  • ExTET Exciplex-Triplet Energy Transfer
  • At least one of the materials that form an exciplex can be a phosphorescent substance. This makes it possible to take advantage of reverse intersystem crossing. Alternatively, triplet excitation energy can be efficiently converted into singlet excitation energy.
  • the HOMO level of the material having a hole-transporting property is higher than or equal to the HOMO level of the material having an electron-transporting property.
  • the lowest unoccupied molecular orbital (LUMO) level of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material. Accordingly, an exciplex can be efficiently formed.
  • the LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential). Specifically, cyclic voltammetry (CV) measurements can be used to measure reduction and oxidation potentials.
  • an exciplex is performed by comparing, for example, the emission spectrum of a material having a hole-transporting property, the emission spectrum of a material having an electron-transporting property, and the emission spectrum of a mixed film in which these materials are mixed. can be confirmed by observing the phenomenon that the emission spectrum of each material shifts to a longer wavelength (or has a new peak on the longer wavelength side).
  • the transient photoluminescence (PL) of a material having a hole-transporting property, the transient PL of a material having an electron-transporting property, and the transient PL of a mixed film in which these materials are mixed are compared, and the transient PL lifetime of the mixed film is This can be confirmed by observing the difference in transient response, such as having a component with a longer lifetime than the transient PL lifetime of each material, or having a larger proportion of a delayed component.
  • the transient PL described above may be read as transient electroluminescence (EL).
  • the formation of an exciplex can also be confirmed. can be confirmed.
  • Layer 111X2 includes luminescent material EM2.
  • Luminescent material EM2 has an emission spectrum ⁇ 2 with a maximum at wavelength ⁇ 2 (see FIG. 1B).
  • the layer 111X2 has an ordinary refractive index n2 at the wavelength ⁇ 2.
  • the layer 111X2 has, for example, an ordinary refractive index of 1.75 or more and 2.1 or less for light with a wavelength of 455 nm or more and 465 nm or less.
  • it has an ordinary refractive index of 1.70 or more and 2.05 or less with respect to light with a wavelength of 633 nm.
  • the wavelength ⁇ 2 can be determined from the maximum of the emission spectrum of the solution of the luminescent material EM2.
  • an organic solvent such as toluene can be used to prepare the solution of the luminescent material EM2.
  • the wavelength ⁇ 2 can be determined from the maximum of the spectrum of the light ELX2 emitted from the light emitting device 550X2.
  • a structure that can be used for the layer 111X can be used for the layer 111X2.
  • the same configuration as layer 111X can be used for layer 111X2.
  • the layer 111X2 can emit light having a hue different from that of the layer 111X.
  • the layer 111X can be configured to emit one light selected from blue, green, red, or the like, and the layer 111X2 can be configured to emit light of another color.
  • a structure for emitting blue light can be used for the layer 111X, and a structure for emitting red light can be used for the layer 111X2.
  • a structure for emitting blue light can be used for the layer 111X, and a structure for emitting yellow light can be used for the layer 111X2.
  • a structure for emitting blue light can be used for the layer 111X, and a structure for emitting green light can be used for the layer 111X2.
  • a light emitting device that emits white light can be provided.
  • the layer 111X2 comprises a luminescent material EM2 and a host material HO2
  • the luminescent material EM2 has an emission spectrum with a maximum at wavelength ⁇ 2
  • the host material HO2 in the film state has a wavelength ⁇ 2 of It has an ordinary refractive index n2.
  • the layer LN has an ordinary refractive index n31 lower than the ordinary refractive index n1 at wavelength ⁇ 1.
  • the layer LN also has an ordinary refractive index n32 lower than the ordinary refractive index n2 at the wavelength ⁇ 2.
  • the refractive index of the layer LN can be measured by using the material contained in the layer LN as a film. For example, if the layer LN includes a plurality of substances, each substance may be used as a film to measure the refractive index.
  • the difference between the ordinary refractive index n1 and the ordinary refractive index n31 is preferably 0.12 or more, more preferably 0.15 or more.
  • the difference between the ordinary refractive index n2 and the ordinary refractive index n32 is preferably 0.12 or more, more preferably 0.15 or more.
  • a layer between the layer 111X and the layer LN has an ordinary refractive index of 1.75 or more and 2.1 or less for light with a wavelength of 455 nm or more and 465 nm or less, for example. Moreover, it has an ordinary refractive index of 1.70 or more and 2.05 or less with respect to light with a wavelength of 633 nm. The same applies to layers between the layer 111X2 and the layer LN. Light is reflected at the interface when the layer LN having an ordinary refractive index in the above range is in contact with the layer LN.
  • the layer LN has an ordinary refractive index of 1.50 or more and 1.75 or less for light with a wavelength of 455 nm or more and 465 nm or less.
  • the layer LN has an ordinary refractive index of 1.45 or more and 1.70 or less with respect to light with a wavelength of 633 nm.
  • Layer LN has a distance d1 from the central plane of layer 111X, and layer LN has a distance d2 from the central plane of layer 111X2 (see FIG. 1A).
  • Layer LN also comprises a thickness t3.
  • the distance d1, the distance d2, the thickness t3, the wavelength ⁇ 1, the wavelength ⁇ 2, the ordinary refractive index n1, the ordinary refractive index n2, the ordinary refractive index n31, and the ordinary refractive index n32 satisfy the following formulas (1) and (2). in a relationship.
  • the light ELX emitted from the layer 111X and the light ELX2 emitted from the layer 111X2 can be extracted efficiently.
  • the layer LN comprises a giant surface potential (GSP).
  • GSP giant surface potential
  • a potential gradient (slope of GSP) obtained by dividing the GSP by the thickness t3 is preferably 20 mV/nm or less.
  • the value ( ⁇ GSP) obtained by subtracting the slope of the GSP of the layer 111X from the slope of the GSP of the layer LN is preferably 10 mV/nm or less, more preferably 0 mV/nm or less.
  • a giant surface potential is a phenomenon in which the surface potential of a vapor-deposited film increases in proportion to the film thickness. It can be explained as a polarization phenomenon.
  • a value obtained by dividing the surface potential of the deposited film by the film thickness that is, the potential gradient (inclination) of the surface potential of the deposited film may be used.
  • the potential gradient of the surface potential of the deposited film is referred to as the slope of GSP (mV/nm).
  • the slope when plotting the surface potential of a deposited film by Kelvin probe measurement in the film thickness direction is discussed as the magnitude of the giant surface potential, that is, the slope (mV/nm) of GSP.
  • the slope of the GSP can be estimated using the fact that the polarization charge density (mC/m 2 ) that accumulates at the interface changes in relation to the slope of the GSP.
  • ⁇ if is the polarization charge density
  • V i is the hole injection voltage
  • V bi is the threshold voltage
  • d 2 is the thickness of the thin film 2
  • ⁇ 2 is the dielectric constant of the thin film 2 .
  • Vi and Vbi can be estimated from the capacitance-voltage characteristics of the device.
  • the square of the ordinary refractive index no (633 nm) can be used as the dielectric constant.
  • the dielectric constant ⁇ 2 of the thin film 2 calculated from the refractive index, and the film thickness d 2 of the thin film 2
  • the polarization charge can be calculated using Equation (3).
  • the density ⁇ if can be determined.
  • ⁇ if is the polarization charge density
  • Pn is the GSP slope of thin film n
  • ⁇ n is the dielectric constant of thin film n
  • dn is the thickness of thin film n.
  • thin film 1 is a deposited film of an organic compound for which the slope of GSP is to be obtained
  • thin film 2 is a thin film using tris(8-quinolinolato)aluminum (abbreviation: Alq3). Note that the GSP slope of Alq3 is 48 mV/nm.
  • the orientation of the vapor-deposited film depends on the substrate temperature during vapor deposition, and there is a possibility that the slope value of GSP also depends on the substrate temperature during vapor deposition.
  • the values of films deposited with the substrate temperature at the time of deposition at room temperature are employed.
  • the wavelength ⁇ 1 is in the range of 430 nm or more and 490 nm or less.
  • the wavelength ⁇ 2 is in the range of 430 nm or more and 490 nm or less.
  • the luminescent material EM2 is the same material as the luminescent material EM1.
  • the light ELX emitted from the layer 111X and the light ELX2 emitted from the layer 111X2 can be extracted efficiently. Also, a light-emitting device with a high blue index can be realized. As a result, it is possible to provide a novel light-emitting device with excellent convenience, usefulness or reliability.
  • the light-emitting device 550X described in this embodiment has a layer 112_11 (see FIG. 1A). Layer 112_11 is sandwiched between electrode 551X and layer 111X.
  • the layer 112_11 has an ordinary refractive index n41 lower than the ordinary refractive index n1 at the wavelength ⁇ 1, and the layer 112_11 has an ordinary refractive index n42 lower than the ordinary refractive index n2 at the wavelength ⁇ 2.
  • the difference between the ordinary refractive index n1 and the ordinary refractive index n41 is preferably 0.12 or more, more preferably 0.15 or more.
  • the difference between the ordinary refractive index n2 and the ordinary refractive index n42 is preferably 0.12 or more, more preferably 0.15 or more.
  • the layer 112_11 has an ordinary refractive index of 1.50 or more and 1.75 or less for light with a wavelength of 455 nm or more and 465 nm or less.
  • the layer 112_11 has an ordinary refractive index of 1.45 or more and 1.70 or less with respect to light with a wavelength of 633 nm.
  • materials that can be used for layer LN can be used for layer 112_11.
  • FIG. 2 is a cross-sectional view illustrating the structure of a light-emitting device of one embodiment of the present invention.
  • a light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a layer 104, and a layer 105 (see FIG. 2). Also, the light-emitting device 550X has a unit 103X2 and a layer 106.
  • FIG. 1 A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a layer 104, and a layer 105 (see FIG. 2). Also, the light-emitting device 550X has a unit 103X2 and a layer 106.
  • Unit 103X is sandwiched between electrodes 551X and 552X.
  • Layer 104 is sandwiched between unit 103X and electrode 551X, and layer 105 is sandwiched between electrode 552X and unit 103X2.
  • the unit 103X2 is sandwiched between the electrode 552X and the unit 103X.
  • Layer 106 is sandwiched between unit 103X2 and unit 103X.
  • the unit 103X has a single layer structure or a laminated structure.
  • unit 103X comprises layer 111X, layer 112 and layer 113 (see FIG. 2).
  • the unit 103X has a function of emitting light ELX.
  • Layer 111X is sandwiched between layers 112 and 113, layer 112 is sandwiched between electrode 551X and layer 111X, and layer 113 is sandwiched between electrode 552X and layer 111X.
  • a layer selected from functional layers such as a light-emitting layer, a hole-transporting layer, an electron-transporting layer, and a carrier-blocking layer can be used for the unit 103X.
  • a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton blocking layer, and a charge generation layer can be used for the unit 103X.
  • ⁇ Configuration example of layer 111X>> For example, the structure described for the layer 111X in Embodiment 1 can be used for the layer 111X.
  • a material having a hole-transport property can be used for the layer 112 .
  • Layer 112 can also be referred to as a hole transport layer. Note that a structure in which a material having a larger bandgap than the light-emitting material contained in the layer 111X is used for the layer 112 is preferable. Accordingly, energy transfer from excitons generated in the layer 111X to the layer 112 can be suppressed.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property.
  • a hole-transporting material that can be used for the layer 111X can be used for the layer 112 .
  • a material having a hole-transport property that can be used for the host material can be used for the layer 112 .
  • a material having an electron-transporting property a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113 .
  • Layer 113 can also be referred to as an electron transport layer. Note that a structure in which a material having a larger bandgap than the light-emitting material contained in the layer 111X is used for the layer 113 is preferable. Accordingly, energy transfer from excitons generated in the layer 111X to the layer 113 can be suppressed.
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.
  • an electron-transporting material that can be used for the layer 111X can be used for the layer 113 .
  • a material having an electron-transport property that can be used as a host material can be used for the layer 113 .
  • An organic compound having an anthracene skeleton can be used for the layer 113 .
  • an organic compound containing both an anthracene skeleton and a heterocyclic skeleton can be preferably used.
  • an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used.
  • an organic compound containing both a nitrogen-containing five-membered ring skeleton containing two heteroatoms in the ring and an anthracene skeleton can be used.
  • a pyrazole ring, imidazole ring, oxazole ring, thiazole ring, and the like can be suitably used for the heterocyclic skeleton.
  • an organic compound containing both an anthracene skeleton and a nitrogen-containing 6-membered ring skeleton can be used.
  • an organic compound containing both a nitrogen-containing 6-membered ring skeleton containing two heteroatoms in the ring and an anthracene skeleton can be used.
  • a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used for the heterocyclic skeleton.
  • a material in which multiple kinds of substances are mixed can be used for the layer 113 .
  • a mixed material containing an alkali metal, an alkali metal compound, or an alkali metal complex and a substance having an electron-transporting property can be used for the layer 113 .
  • the HOMO level of the material having an electron-transport property is more preferably ⁇ 6.0 eV or higher.
  • a conductive material can be used for electrode 551X.
  • a film containing a metal, an alloy, or a conductive compound can be used as the electrode 551X in a single layer or a laminated layer.
  • a film that efficiently reflects light can be used for the electrode 551X.
  • an alloy containing silver, copper, or the like, an alloy containing silver, palladium, or the like, or a metal film such as aluminum can be used for the electrode 551X.
  • a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 551X.
  • a microresonator structure microwavecavity
  • light with a predetermined wavelength can be extracted more efficiently than other light.
  • light with a narrow half width of the spectrum can be extracted. Or you can take out bright colors of light.
  • a film that transmits visible light can be used for the electrode 551X.
  • a metal film, an alloy film, a conductive oxide film, or the like that is thin enough to transmit light can be used as the electrode 551X in a single layer or stacked layers.
  • a material having a work function of 4.0 eV or more can be suitably used for the electrode 551X.
  • a conductive oxide containing indium can be used.
  • indium oxide, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, tungsten oxide and zinc oxide are included.
  • IWZO Indium oxide
  • a conductive oxide containing zinc can be used.
  • zinc oxide, gallium-added zinc oxide, aluminum-added zinc oxide, or the like can be used.
  • gold Au
  • platinum Pt
  • nickel Ni
  • tungsten W
  • Cr chromium
  • Mo molybdenum
  • iron Fe
  • Co cobalt
  • Cu copper
  • palladium Pd
  • a nitride of a metal material eg, titanium nitride
  • graphene can be used.
  • ⁇ Configuration Example 1 of Layer 104>> a material with hole injection properties can be used for layer 104 .
  • Layer 104 can also be referred to as a hole injection layer.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 3 cm/Vs or less when the square root of the electric field strength [V/cm] is 600 can be used for the layer 104 .
  • a film having an electrical resistivity of 1 ⁇ 10 4 [ ⁇ cm] to 1 ⁇ 10 7 [ ⁇ cm] can be used for the layer 104 .
  • the layer 104 has an electrical resistivity of 5 ⁇ 10 4 [ ⁇ cm] or more and 1 ⁇ 10 7 [ ⁇ cm] or less, more preferably 1 ⁇ 10 5 [ ⁇ cm] or more. It has an electrical resistivity of 1 ⁇ 10 7 [ ⁇ cm] or less.
  • Electrode-accepting substance Organic compounds and inorganic compounds can be used as the electron-accepting substance.
  • a substance having an electron-accepting property can extract electrons from an adjacent hole-transporting layer or a material having a hole-transporting property by application of an electric field.
  • a compound having an electron-withdrawing group can be used as an electron-accepting substance. That is, layer 104 preferably contains an organic compound having a halogen group or a cyano group. Fluorine (fluoro group) is particularly preferable as the halogen group. Note that an electron-accepting organic compound is easily vapor-deposited and easily formed into a film. Thereby, the productivity of the light emitting device 550X can be improved.
  • a compound in which an electron-withdrawing group is bound to a condensed aromatic ring having a plurality of heteroatoms such as HAT-CN, is thermally stable and preferable.
  • Radialene derivatives having an electron-withdrawing group are preferred because they have very high electron-accepting properties.
  • a transition metal oxide such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, or manganese oxide can be used as the electron-accepting substance. That is, layer 104 preferably contains a transition metal oxide.
  • phthalocyanine-based complex compounds such as phthalocyanine (abbreviation: H 2 Pc) and copper phthalocyanine (CuPc), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis ⁇ 4-[bis(3-methylphenyl)amino]phenyl ⁇ -N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: A compound having an aromatic amine skeleton such as DNTPD) can be used.
  • DPAB 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl
  • DPAB 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl
  • DPAB 4,4
  • Polymers such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS) can also be used.
  • a composite material containing an electron-accepting substance and a hole-transporting material can be used for the layer 104 . Accordingly, not only a material with a large work function but also a material with a small work function can be used for the electrode 551X. Alternatively, the material used for the electrode 551X can be selected from a wide range of materials without depending on the work function.
  • compounds with an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons with a vinyl group, polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as hole transporters in composite materials. It can be used for materials having properties.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property of the composite material.
  • a substance having a relatively deep HOMO level can be suitably used as a hole-transporting material of the composite material.
  • the HOMO level is preferably ⁇ 5.7 eV or more and ⁇ 5.4 eV or less. This facilitates the injection of holes into the unit 103X. Also, the injection of holes into the layer 112 can be facilitated. Also, the reliability of the light emitting device 550X can be improved.
  • Examples of compounds having an aromatic amine skeleton include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N- (4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis ⁇ 4-[bis(3-methylphenyl)amino]phenyl ⁇ -N,N'-diphenyl-( 1,1′-biphenyl)-4,4′-diamine (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can be used.
  • DTDPPA 4,4'-bis[N- (4-diphenylaminophenyl)-N-phenylamino]b
  • Carbazole derivatives include, for example, 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9- phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]- 9-phenylcarbazole (abbreviation: PCzPCN1), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB) ), 9-[4-(10-phenyl-9-anthracenyl
  • aromatic hydrocarbons examples include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl) anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9, 10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl) -1-naphthyl)anthracene (abbreviation: DM
  • aromatic hydrocarbons having a vinyl group examples include 4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2- Diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA) and the like can be used.
  • DPVBi 4,4′-bis(2,2-diphenylvinyl)biphenyl
  • DPVPA 9,10-bis[4-(2,2- Diphenylvinyl)phenyl]anthracene
  • polymer compounds include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4- ⁇ N'-[4- (4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl ) benzidine] (abbreviation: Poly-TPD), etc. can be used.
  • PVK poly(N-vinylcarbazole)
  • PVTPA poly(4-vinyltriphenylamine)
  • PTPDMA poly[N-(4- ⁇ N'-[4- (4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide]
  • a substance having any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton can be suitably used as a hole-transporting material of the composite material.
  • a substance comprising an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine having a 9-fluorenyl group bonded to the nitrogen of the amine via an arylene group. can be used for materials having hole-transport properties in composite materials. Note that the reliability of the light-emitting device 550X can be improved by using a substance having an N,N-bis(4-biphenyl)amino group.
  • BnfABP N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine
  • BnfABP N,N-bis( 4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine
  • BBABnf 4,4′-bis(6-phenylbenzo[b]naphtho[1,2 -d]furan-8-yl)-4′′-phenyltriphenylamine
  • BnfBB1BP N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6- amine
  • BBABnf(6) N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine
  • [Configuration example 2 of composite material] For example, a composite material containing an electron-accepting substance, a hole-transporting material, and an alkali metal fluoride or alkaline earth metal fluoride is used as the hole-injecting material. can be done. In particular, a composite material in which the atomic ratio of fluorine atoms is 20% or more can be preferably used. Thereby, the refractive index of the layer 104 can be lowered. Alternatively, a layer with a low refractive index can be formed inside the light emitting device 550X. Alternatively, the external quantum efficiency of light emitting device 550X can be improved.
  • Unit 103X2 comprises layer 111X2, layer 112_2 and layer 113_2 (see FIG. 2).
  • the unit 103X2 has a function of emitting light ELX2.
  • Layer 111X2 is sandwiched between layers 112_2 and 113_2, layer 112_2 is sandwiched between electrode 551X and layer 111X2, and layer 113_ is sandwiched between electrode 552X and layer 111X2.
  • ⁇ Configuration example of layer 111X2>> For example, the structure described for the layer 111X2 in Embodiment 1 can be used for the layer 111X2.
  • Layer 112_2 comprises layer 112_21 and layer 112_22. Layer 112_22 is sandwiched between layer 111X2 and layer 112_21.
  • ⁇ Configuration example of layer 112_21>> For example, the structure described for the layer LN in Embodiment 1 can be used for the layer 112_21.
  • the ordinary refractive index in the blue light emitting region (455 nm or more and 465 nm or less) is 1.40 or more and 1.75 or less, or the ordinary refractive index for light of 633 nm, which is usually used for refractive index measurement, is 1.40 or more. 1.70 or less and a material having a hole-transport property can be used for the layer 112_21.
  • Monoamine compounds bound to nitrogen atoms can be used for layer 112_21.
  • the ratio of carbons forming bonds in sp3 hybrid orbitals to the total number of carbon atoms in the molecule is preferably 23% or more and 55% or less, and the monoamine compound is measured by 1 H-NMR. It is preferred that the compound is such that the integrated value of the signal of less than 4 ppm exceeds the integrated value of the signal of 4 ppm or more.
  • the monoamine compound preferably has at least one fluorene skeleton, and one or more of the first aromatic group, the second aromatic group and the third aromatic group is preferably a fluorene skeleton.
  • Examples of the organic compound having a hole-transport property as described above include organic compounds having structures represented by the following general formulas (G h1 1) to (G h1 4).
  • Ar 1 and Ar 2 each independently represent a benzene ring or a substituent in which two or three benzene rings are bonded to each other.
  • one or both of Ar 1 and Ar 2 has one or more hydrocarbon groups having 1 to 12 carbon atoms that are bonded only by sp3 hybrid orbitals, and are bonded to Ar 1 and Ar 2
  • the total number of carbon atoms contained in all hydrocarbon groups is 8 or more, and the total number of carbon atoms contained in all hydrocarbon groups bonded to either one of Ar 1 and Ar 2 is 6 or more.
  • linear alkyl groups having 1 to 2 carbon atoms When a plurality of linear alkyl groups having 1 to 2 carbon atoms are bonded to Ar 1 or Ar 2 as hydrocarbon groups, the linear alkyl groups may be bonded to each other to form a ring.
  • hydrocarbon group having 1 to 12 carbon atoms in which carbon atoms are bonded only through sp3 hybrid orbital an alkyl group having 3 to 8 carbon atoms and a cycloalkyl group having 6 to 12 carbon atoms are preferable.
  • m and r each independently represent 1 or 2, and m+r is 2 or 3.
  • Each t independently represents an integer of 0 to 4, preferably 0.
  • R 4 and R 5 each independently represent either hydrogen or a hydrocarbon group having 1 to 3 carbon atoms.
  • m 2
  • the types of substituents possessed by the two phenylene groups, the number of substituents, and the position of the bond may be the same or different
  • r 2
  • the types of substituents, the number of substituents and the position of the bond may be the same or different.
  • t is an integer of 2 to 4
  • a plurality of R 5 may be the same or different, and adjacent groups of R 5 may be bonded to each other to form a ring. .
  • n and p each independently represent 1 or 2, and n+p and each independently represent 2 or 3.
  • Each s independently represents an integer of 0 to 4, preferably 0. When s is an integer of 2 to 4, multiple R 4 may be the same or different.
  • R 4 represents either hydrogen or a hydrocarbon group having 1 to 3 carbon atoms, and when n is 2, the type of substituents possessed by the two phenylene groups, the number of substituents and the bond may be the same or different, and when p is 2, the types of substituents possessed by the two phenyl groups, the number of substituents and the position of the bond may be the same or different. good.
  • a plurality of R 4 may be the same or different.
  • hydrocarbon groups having 1 to 3 carbon atoms include methyl group, ethyl group, propyl group and isopropyl group.
  • each of R 10 to R 14 and R 20 to R 24 is independently hydrogen, or 1 carbon atom in which the carbon atoms form a bond only in an sp3 hybrid orbital to 12 hydrocarbon groups. At least 3 of R 10 to R 14 and at least 3 of R 20 to R 24 are preferably hydrogen.
  • the hydrocarbon group having 1 to 12 carbon atoms in which carbon atoms form a bond only through sp3 hybrid orbital tert-butyl group and cyclohexyl group are preferable.
  • R 10 to R 14 and R 20 to R 24 are 8 or more, and the total number of carbon atoms contained in either one of R 10 to R 14 or R 20 to R 24 is 6 and above.
  • Adjacent groups of R 10 to R 14 and R 20 to R 24 may combine with each other to form a ring.
  • hydrocarbon group having 1 to 12 carbon atoms in which carbon atoms are bonded only through sp3 hybrid orbital an alkyl group having 3 to 8 carbon atoms and a cycloalkyl group having 6 to 12 carbon atoms are preferable.
  • each u independently represents an integer of 0 to 4, preferably 0.
  • a plurality of R 3 may be the same or different.
  • R 1 , R 2 and R 3 each independently represent an alkyl group having 1 to 4 carbon atoms, and R 1 and R 2 may combine with each other to form a ring.
  • Hydrocarbon groups having 1 to 4 carbon atoms include methyl group, ethyl group, propyl group and butyl group.
  • one of the materials having a hole-transport property has at least one aromatic group, and the aromatic group has first to third benzene rings and at least three alkyl groups. Also preferred are arylamine compounds. Note that the first to third benzene rings are bonded in this order, and the first benzene ring is directly bonded to nitrogen of the amine.
  • first benzene ring may further have a substituted or unsubstituted phenyl group, and preferably has an unsubstituted phenyl group.
  • second benzene ring or the third benzene ring may have a phenyl group substituted with an alkyl group.
  • first to third benzene rings two or more benzene rings, preferably all benzene rings, are not directly bonded to carbon atoms at positions 1 and 3, and the first to third benzene rings are It should be attached to any of the third benzene ring, the alkyl group-substituted phenyl group described above, the at least three alkyl groups described above, and the nitrogen of the amine described above.
  • the arylamine compound preferably further has a second aromatic group.
  • the second aromatic group is preferably a group having an unsubstituted monocyclic ring or a substituted or unsubstituted 3 or less condensed ring, and among these, a substituted or unsubstituted 3 or less condensed ring.
  • the condensed ring is more preferably a group having a condensed ring with 6 to 13 carbon atoms forming the ring, more preferably a group having a benzene ring, a naphthalene ring, a fluorene ring, or an acenaphthylene ring.
  • a dimethylfluorenyl group is preferable as the second aromatic group.
  • the arylamine compound preferably further has a third aromatic group.
  • the third aromatic group is a group having 1 to 3 substituted or unsubstituted benzene rings.
  • the at least three alkyl groups described above and the alkyl groups substituting the phenyl group are preferably chain alkyl groups having 2 to 5 carbon atoms.
  • the alkyl group is preferably a branched chain alkyl group having 3 to 5 carbon atoms, more preferably a t-butyl group.
  • Examples of the material having a hole-transport property as described above include organic compounds having structures (G h2 1) to (G h2 3) below.
  • Ar 101 represents a substituted or unsubstituted benzene ring or a substituent in which two or three substituted or unsubstituted benzene rings are bonded to each other.
  • R 109 represents an alkyl group having 1 to 4 carbon atoms, and w represents an integer of 0 to 4;
  • R 141 to R 145 independently represents any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 5 to 12 carbon atoms.
  • w is 2 or more, the plurality of R 109 may be the same or different.
  • x is 2, the types of substituents, the number of substituents and the position of the bond of the two phenylene groups may be the same or different.
  • y the types and number of substituents of the two phenyl groups having R 141 to R 145 may be the same or different.
  • R 101 to R 105 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 6 to 12 carbon atoms, and a substituted or unsubstituted represents any one of substituted phenyl groups.
  • R 106 , R 107 and R 108 each independently represent an alkyl group having 1 to 4 carbon atoms, and v represents an integer of 0 to 4. .
  • the plurality of R 108 may be the same or different.
  • One of R 111 to R 115 is a substituent represented by the general formula (g1), and the rest are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted represents any one of phenyl groups.
  • R 121 to R 125 is a substituent represented by the above general formula (g2), and the rest are each independently hydrogen, alkyl having 1 to 6 carbon atoms and a phenyl group substituted with an alkyl group having 1 to 6 carbon atoms.
  • each of R 131 to R 135 is independently hydrogen, an alkyl group having 1 to 6 carbon atoms, and a phenyl group substituted with an alkyl group having 1 to 6 carbon atoms.
  • R 111 to R 115 represents either one of At least 3 or more of R 111 to R 115 , R 121 to R 125 and R 131 to R 135 are alkyl groups having 1 to 6 carbon atoms, and R 111 to R 115 are substituted or unsubstituted
  • the number of phenyl groups is 1 or less, and the number of phenyl groups substituted with alkyl groups having 1 to 6 carbon atoms in R 121 to R 125 and R 131 to R 135 is 1 or less.
  • at least one R shall be other than hydrogen.
  • the substituent when the substituted or unsubstituted benzene ring or the substituted or unsubstituted phenyl group has a substituent, the substituent has 1 to 1 carbon atoms.
  • Alkyl groups having 6 carbon atoms and cycloalkyl groups having 5 to 12 carbon atoms can be used.
  • the alkyl group having 1 to 4 carbon atoms a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group and a tert-butyl group are preferable.
  • the alkyl group having 1 to 6 carbon atoms a chain alkyl group having 2 or more carbon atoms is preferable, and a chain alkyl group having 5 or less carbon atoms is preferable from the viewpoint of ensuring transportability.
  • a branched chain alkyl group having 3 or more carbon atoms has a remarkable effect of reducing the refractive index. That is, the alkyl group having 1 to 6 carbon atoms is preferably a chain alkyl group having 2 to 5 carbon atoms, more preferably a branched chain alkyl group having 3 to 5 carbon atoms.
  • the alkyl group having 1 to 6 carbon atoms is preferably a methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group or pentyl group, particularly preferably tert. - is a butyl group.
  • the cycloalkyl groups having 5 to 12 carbon atoms include cyclohexyl group, 4-methylcyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, decahydronaphthyl group, cycloundecyl group, and A cyclododecyl group or the like can be used, but a cycloalkyl group having 6 or more carbon atoms is preferred for lowering the refractive index, and cyclohexyl group and cyclododecyl group are particularly preferred.
  • the organic compound having a hole-transporting property as described above has an ordinary refractive index of 1.40 or more and 1.75 or less in the blue light emission region (455 nm or more and 465 nm or less), or It is an organic compound having an ordinary refractive index of 1.40 or more and 1.70 or less and having a good hole-transporting property. At the same time, it is also possible to obtain an organic compound having a high glass transition temperature (Tg) and good reliability. Such organic compounds also have sufficient hole transport properties.
  • Examples of such materials include N,N-bis(4-cyclohexylphenyl)-9,9,-dimethyl-9H-fluoren-2-amine (abbreviation: dchPAF), N-[(4′-cyclohexyl) -1,1′-biphenyl-4yl]-N-(4-cyclohexylphenyl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: chBichPAF), N,N-bis(4-cyclohexylphenyl) )-N-(spiro[cyclohexane-1,9′[9H]fluoren]-2′yl)amine (abbreviation: dchPASchF), N-[(4′-cyclohexyl)-1,1′-biphenyl-4yl] -N-(4-cyclohexylphenyl)-N-(spiro[cyclohexane-1,9'
  • TAPC 1,1-bis ⁇ 4-[bis(4-methylphenyl)amino]phenyl ⁇ cyclohexane
  • ⁇ Configuration example of layer 112_22>> For example, a material having a hole-transport property that can be used for the layer 112 can be used for the layer 112_22.
  • ⁇ Configuration example of layer 113_2>> For example, a material having an electron-transport property, a material having an anthracene skeleton, a mixed material, or the like that can be used for the layer 113 can be used for the layer 113_2.
  • a conductive material can be used for electrode 552X.
  • materials including metals, alloys, or conductive compounds can be used for electrode 552X in a single layer or multiple layers.
  • a material that can be used for the electrode 551X can be used for the electrode 552X.
  • a material having a smaller work function than that of the electrode 551X can be suitably used for the electrode 552X.
  • a material having a work function of 3.8 eV or less is preferable.
  • an element belonging to Group 1 of the periodic table, an element belonging to Group 2 of the periodic table, a rare earth metal, and an alloy containing these can be used for the electrode 552X.
  • lithium (Li), cesium (Cs), etc., magnesium (Mg), calcium (Ca), strontium (Sr), etc., europium (Eu), ytterbium (Yb), etc. and alloys containing these (MgAg, AlLi) can be used for electrode 552X.
  • Layer 105 a material with electron injection properties can be used for the layer 105 .
  • Layer 105 can also be referred to as an electron injection layer.
  • an electron-donating substance can be used for the layer 105 .
  • a material obtained by combining an electron-donating substance and an electron-transporting material can be used for the layer 105 .
  • an electride can be used for layer 105 . This makes it easier to inject electrons from the electrode 552X, for example.
  • the material used for the electrode 552X can be selected from a wide range of materials without depending on the work function. Specifically, Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552X.
  • the driving voltage of the light emitting device 550X can be reduced.
  • Electrode donating substance For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as electron-donating substances.
  • an organic compound such as tetrathianaphthacene (abbreviation: TTN), nickelocene, decamethylnickelocene, or the like can be used as the electron-donating substance.
  • Alkali metal compounds include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinolinato-lithium (abbreviation : Liq), etc. can be used.
  • Calcium fluoride (CaF 2 ) and the like can be used as alkaline earth metal compounds (including oxides, halides, and carbonates).
  • a material in which a plurality of kinds of substances are combined can be used as the material having an electron-injecting property.
  • a substance having an electron-donating property and a material having an electron-transporting property can be used as a composite material.
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.
  • an electron-transporting material that can be used for the unit 103X can be used for the composite material.
  • a microcrystalline alkali metal fluoride and a material having an electron-transporting property can be used for the composite material.
  • a microcrystalline alkaline earth metal fluoride and a material having an electron-transporting property can be used for the composite material.
  • a composite material containing 50 wt % or more of an alkali metal fluoride or an alkaline earth metal fluoride can be preferably used.
  • a composite material containing an organic compound having a bipyridine skeleton can be preferably used. Thereby, the refractive index of the layer 105 can be lowered. Alternatively, the external quantum efficiency of light emitting device 550X can be improved.
  • a composite material including a first organic compound with a lone pair of electrons and a first metal can be used for layer 105 . Further, it is preferable that the sum of the number of electrons of the first organic compound and the number of electrons of the first metal is an odd number. Further, the molar ratio of the first metal to 1 mol of the first organic compound is preferably 0.1 or more and 10 or less, more preferably 0.2 or more and 2 or less, and still more preferably 0.2 or more and 0.8 or less. be.
  • the first organic compound having the lone pair of electrons can interact with the first metal to form a singly occupied molecular orbital (SOMO).
  • SOMO singly occupied molecular orbital
  • the spin density measured using an electron spin resonance method is preferably 1 ⁇ 10 16 spins/cm 3 or more, more preferably 5 ⁇ 10 16 spins/cm 3 or more, and still more preferably Composite materials that are greater than or equal to 1 ⁇ 10 17 spins/cm 3 can be used for layer 105 .
  • Organic compound with lone pair of electrons materials with electron-transporting properties can be used in organic compounds with lone pairs of electrons.
  • a compound having an electron-deficient heteroaromatic ring can be used.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used. Thereby, the driving voltage of the light emitting device 550X can be reduced.
  • the LUMO level of the organic compound having a lone pair of electrons is preferably ⁇ 3.6 eV or more and ⁇ 2.3 eV or less.
  • the HOMO level and LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, light absorption spectroscopy, inverse photoelectron spectroscopy, or the like.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • copper phthalocyanine can be used in organic compounds with lone pairs of electrons. Note that the number of electrons in copper phthalocyanine is an odd number.
  • group metals aluminum (Al) and indium (In) are odd numbered groups in the periodic table.
  • Elements of Group 11 have a lower melting point than Group 7 or Group 9 elements, and are suitable for vacuum deposition. Ag is particularly preferred because of its low melting point.
  • the layer 105 may be made of a composite material of the first metal and the first organic compound, which are even-numbered groups in the periodic table. can be done.
  • Iron (Fe) a Group 8 metal, is an even group in the periodic table.
  • Electrode For example, a material in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration, or the like can be used as an electron-injecting material.
  • the layer 106 has the function of supplying electrons to the anode side and supplying holes to the cathode side by applying a voltage.
  • Layer 106 can also be referred to as a charge generation layer.
  • a hole-injecting material that can be used for layer 104 can be used for layer 106 .
  • composite materials can be used for layer 106 .
  • a layered film in which a film containing the composite material and a film containing a material having a hole-transport property are stacked can be used for the layer 106 .
  • Layers 106 include layer 106_1, layer 106_2 and layer 106_3.
  • Layer 106_1 comprises a region sandwiched between electrode 552X and unit 103X
  • layer 106_2 comprises a region sandwiched between layer 106_1 and unit 103X
  • layer 106_3 is sandwiched between layer 106_1 and layer 106_2.
  • a hole-injecting material that can be used for the layer 104 can be used for the layer 106_1.
  • composite materials can be used for layer 106_1.
  • a film having an electrical resistivity of 1 ⁇ 10 4 [ ⁇ cm] to 1 ⁇ 10 7 [ ⁇ cm] can be used for the layer 106_1.
  • the layer 106_1 preferably has an electrical resistivity of 5 ⁇ 10 4 [ ⁇ cm] or more and 1 ⁇ 10 7 [ ⁇ cm] or less, more preferably 1 ⁇ 10 5 [ ⁇ cm] or more. It has an electrical resistivity of 1 ⁇ 10 7 [ ⁇ cm] or less.
  • ⁇ Configuration example of layer 106_2>> For example, materials that can be used for layer 105 can be used for layer 106_2.
  • a material having an electron-transport property can be used for the layer 106_3.
  • layer 106_3 can be referred to as an electron relay layer.
  • the layer contacting the anode side of layer 106_3 can be kept away from the layer contacting the cathode side of layer 106_3.
  • the interaction between the layer on the anode side of layer 106_3 and the layer on the cathode side of layer 106_3 can be mitigated. Electrons can be smoothly supplied to the layer in contact with the anode side of the layer 106_3.
  • a substance having a LUMO level between the LUMO level of the substance having an electron-accepting property contained in the layer in contact with the cathode side of the layer 106_3 and the LUMO level of the substance contained in the layer in contact with the anode side of the layer 106_3 is used. , can be preferably used for the layer 106_3.
  • a material having a LUMO level in the range of -5.0 eV to -3.0 eV, preferably -5.0 eV to -3.0 eV, can be used for the layer 106_3.
  • a phthalocyanine-based material can be used for the layer 106_3.
  • a phthalocyanine-based material can be used for the layer 106_3.
  • copper phthalocyanine (abbreviation: CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand can be used for the layer 106_3.
  • FIG. 3 is a cross-sectional view illustrating a structure of a light-emitting device of one embodiment of the present invention, which has a structure different from that in FIG.
  • a light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a layer 104, and a layer 105 (see FIG. 3). Also, the light-emitting device 550X has a unit 103X2 and a layer 106.
  • FIG. 1 A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a layer 104, and a layer 105 (see FIG. 3). Also, the light-emitting device 550X has a unit 103X2 and a layer 106.
  • the layer 113 is different from the light-emitting device 550X described with reference to FIG. 2 in Embodiment 2 in that the layer 113 includes layers 113_11 and 113_12 and the layer 112_2 is a single layer.
  • the layer 113 includes layers 113_11 and 113_12 and the layer 112_2 is a single layer.
  • different parts will be described in detail, and the description of the second embodiment will be used for parts having the same configuration.
  • Layer 113 comprises layer 113_11 and layer 113_12. Layer 113_11 is sandwiched between layer 111X and layer 113_12.
  • ⁇ Configuration example of layer 113_11>> For example, a material having an electron-transporting property, a material having an anthracene skeleton, a mixed material, or the like which can be used for the layer 113 described in Embodiment 2 can be used for the layer 113_11.
  • ⁇ Configuration example of layer 113_12>> For example, the structure described for the layer LN in Embodiment 1 can be used for the layer 113_12.
  • the ordinary refractive index in the blue light emitting region (455 nm or more and 465 nm or less) is 1.50 or more and 1.75 or less, or the ordinary refractive index for light of 633 nm, which is usually used for refractive index measurement, is 1.45 or more. 1.70 or less and an electron-transporting material can be used for the layer 113_12.
  • having at least one 6-membered heteroaromatic ring containing 1 or more and 3 or less nitrogen having a plurality of aromatic hydrocarbon rings having 6 to 14 carbon atoms forming the ring, and having a plurality of the At least two of the aromatic hydrocarbon rings are benzene rings, and an organic compound having a plurality of hydrocarbon groups forming bonds in sp3 hybrid orbitals can be used for the layer 113_12.
  • the ratio of the number of carbon atoms forming a bond in the sp3 hybridized orbital to the total number of carbon atoms in the molecule is preferably 10% or more and 60% or less, and more preferably 10% or more and 50% or less. preferable.
  • such an organic compound is such that the integrated value of the signal of less than 4 ppm in the result of measuring the organic compound by 1 H-NMR is 1/2 or more times the integrated value of the signal of 4 ppm or more. preferable.
  • the hydrocarbon group forming a bond in all the sp3 hybridized orbitals of the organic compound is bonded to the aromatic hydrocarbon ring having 6 to 14 carbon atoms forming the ring, and the aromatic hydrocarbon It is preferred that the LUMO of the organic compound is not distributed in the ring.
  • an organic compound represented by the following general formula (G e 1) can be used for the layer 113_12.
  • A represents a 6-membered heteroaromatic ring containing 1 or more and 3 or less nitrogen atoms, and is preferably a pyridine ring, a pyrimidine ring, a pyrazine ring, a pyridazine ring, or a triazine ring.
  • R 200 represents either hydrogen, an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, or a substituent represented by formula (G e 1-1).
  • At least one of R 201 to R 215 is a substituted phenyl group, and each of the others is independently hydrogen, an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, a substituted or unsubstituted represents either an aromatic hydrocarbon group having 6 to 14 carbon atoms forming a substituted ring, or a substituted or unsubstituted pyridyl group;
  • R 201 , R 203 , R 205 , R 206 , R 208 , R 210 , R 211 , R 213 and R 215 are preferably hydrogen.
  • the substituted phenyl group has one or two substituents, each of which is independently an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, a substituted or unsubstituted an aromatic hydrocarbon group having 6 to 14 carbon atoms forming a substituted ring.
  • the organic compound represented by the general formula (G e 1) has a plurality of hydrocarbon groups selected from alkyl groups having 1 to 6 carbon atoms and alicyclic groups having 3 to 10 carbon atoms, and The ratio of the total number of carbon atoms forming bonds in sp3 hybrid orbitals to the total number of carbon atoms in is 10% or more and 60% or less.
  • an organic compound represented by the following general formula (G e 2) can be used for the layer 113_12.
  • At least one of R 201 to R 215 is a phenyl group having a substituent, and R 201 to R 215 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alicyclic group having 3 to 10 carbon atoms. represents either a cyclic hydrocarbon group, a substituted or unsubstituted ring-forming aromatic hydrocarbon group having 6 to 14 carbon atoms, or a substituted or unsubstituted pyridyl group.
  • a phenyl group having a substituent has 1 or 2 substituents, and each substituent is independently an alkyl group having 1 to 6 carbon atoms, an alicyclic hydrocarbon group having 3 to 10 carbon atoms, or a substituted or It is an aromatic hydrocarbon group having 6 to 14 carbon atoms that forms an unsubstituted ring.
  • an organic compound in which sp3 carbon accounts for 10% or more and 60% or less of all the carbon contained in the organic compound is used for the layer 113_12. be able to.
  • sp3 carbon is carbon that forms a bond with another atom in an sp3 hybrid orbital.
  • the phenyl group having a substituent is preferably a group represented by the following formula (G e 1-2).
  • ⁇ represents a substituted or unsubstituted phenylene group, preferably a meta-substituted phenylene group.
  • the meta-substituted phenylene group has one substituent, it is preferable that the substituent is also substituted at the meta-position.
  • the substituent is preferably an alkyl group having 1 to 6 carbon atoms or an alicyclic group having 3 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and t- A butyl group is more preferred.
  • R 220 represents an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, or an aromatic hydrocarbon group having 6 to 14 carbon atoms forming a substituted or unsubstituted ring.
  • j and k each independently represent 1 or 2.
  • a plurality of ⁇ may be the same or different.
  • the plurality of R 220 may be the same or different.
  • R 220 is preferably a phenyl group, and is a phenyl group having an alkyl group having 1 to 6 carbon atoms or an alicyclic group having 3 to 10 carbon atoms at one or both of two meta positions. is more preferable.
  • the substituent which the phenyl group has at one or both of the two meta positions is more preferably an alkyl group having 1 to 6 carbon atoms, more preferably a t-butyl group.
  • ⁇ Configuration example of layer 112_2>> For example, a material having a hole-transport property that can be used for the layer 112 described in Embodiment 2 can be used for the layer 112_2.
  • FIG. 4 is a cross-sectional view illustrating the structure of a display device 700 of one embodiment of the present invention.
  • FIG. 5 is a cross-sectional view illustrating a structure of a display device 700 of one embodiment of the present invention, which is different from FIG.
  • a display device 700 described in this embodiment includes a light emitting device 550X (i, j) and a light emitting device 550Y (i, j) (see FIG. 4).
  • Light emitting device 550Y(i,j) is adjacent to light emitting device 550X(i,j).
  • the display device 700 has a substrate 510 and a functional layer 520 .
  • the functional layer 520 comprises an insulating film 521 on which the light emitting devices 550X(i,j) and 550Y(i,j) are formed. Functional layer 520 is sandwiched between substrate 510 and light emitting device 550X(i,j).
  • Light-emitting device 550X(i,j) includes electrode 551X(i,j), electrode 552X(i,j), unit 103X(i,j), unit 103X2(i,j), layer 106X(i , j) and . It also has layer 104X(i,j) and layer 105X(i,j).
  • the light emitting device 550X described in Embodiment 2 or 3 can be used as the light emitting device 550X(i,j).
  • a structure that can be used for the electrode 551X can be used for the electrode 551X(i, j).
  • the configuration that can be used for the unit 103X can be used for the unit 103X(i,j), and the configuration that can be used for the unit 103X2 can be used for the unit 103X2(i,j).
  • any configuration that can be used for layer 106 can be used for layer 106X(i,j).
  • the configuration that can be used for layer 104 can be used for layer 104X(i,j), and the configuration that can be used for layer 105 can be used for layer 105X(i,j).
  • a light-emitting device 550Y(i,j) described in this embodiment includes an electrode 551Y(i,j), an electrode 552Y(i,j), a unit 103Y(i,j), and a unit 103Y2(i,j). ) and a layer 106Y(i,j). It also has layer 104Y(i,j) and layer 105Y(i,j).
  • Electrode 551Y(i,j) is adjacent to electrode 551X(i,j), and electrode 551Y(i,j) has gap 551XY(i,j) with electrode 551X(i,j). Note that the potential supplied to the electrode 551Y(i, j) may be the same as or different from that of the electrode 551X(i, j). By supplying different potentials, the light emitting device 550Y(i,j) can be driven under different conditions than the light emitting device 550X(i,j).
  • Electrode 552Y(i,j) overlaps electrode 551Y(i,j).
  • Unit 103Y(i,j) is sandwiched between electrode 551Y(i,j) and electrode 552Y(i,j), and unit 103Y2(i,j) is sandwiched between electrode 552Y(i,j) and unit 103Y(i,j). i, j). Also, layer 106Y(i,j) is sandwiched between unit 103Y2(i,j) and unit 103Y(i,j).
  • Layer 104Y(i,j) is sandwiched between unit 103Y(i,j) and electrode 551Y(i,j) and layer 105Y(i,j) is sandwiched between electrode 552Y(i,j) and unit 103Y2(i). , j).
  • electrode 551X(i,j) a configuration that can be used for electrode 551X(i,j) can also be used for electrode 551Y(i,j). Further, part of the conductive film that can be used for the electrode 552X(i, j) can be used for the electrode 552Y(i, j).
  • the light emitting device 550X described in Embodiment 2 or 3 can be used for the light emitting device 550Y(i, j).
  • a structure that can be used for the electrode 551X can be used for the electrode 551Y(i, j).
  • the configuration that can be used for the unit 103X can be used for the unit 103Y(i,j), and the configuration that can be used for the unit 103X2 can be used for the unit 103Y2(i,j).
  • any configuration that can be used for layer 106 can be used for layer 106Y(i,j).
  • the structure that can be used for the layer 104 can be used for the layer 104Y(i,j), and the structure that can be used for the layer 105 can be used for the layer 105Y(i,j).
  • part of the configuration of the light emitting device 550X(i, j) can be used as part of the configuration of the light emitting device 550Y(i, j). As a result, part of the configuration can be made common. Moreover, the manufacturing process can be simplified.
  • a configuration that emits light having a hue different from that of the light emitting device 550X(i, j) can be used for the light emitting device 550Y(i, j).
  • the hue of the light ELY emitted by the unit 103Y(i, j) can be made different from the hue of the light ELX.
  • the hue of the light ELY2 emitted by the unit 103Y2(i, j) can be made different from the hue of the light ELX2.
  • a configuration that emits light of the same hue as the light emission color of the light emitting device 550X(i, j) can be used for the light emitting device 550Y(i, j).
  • light emitting device 550X(i,j) and light emitting device 550Y(i,j) may both emit white light.
  • a colored layer can be placed over the light-emitting device 550X(i, j) to extract light of a predetermined hue from white light. Also, another colored layer can be placed over light emitting device 550Y(i,j) to extract another predetermined hue of light from the white light.
  • both the light emitting device 550X(i, j) and the light emitting device 550Y(i, j) may emit blue light.
  • a color conversion layer may be placed over light emitting device 550X(i,j) to convert blue light to light of a predetermined hue.
  • Another color conversion layer may also be placed over light emitting device 550Y(i,j) to convert blue light to another predetermined hue of light. Blue light can be converted into green light or red light, for example.
  • the display device 700 described in this embodiment also includes an insulating film 528 (see FIG. 4).
  • the insulating film 528 has openings, one opening overlapping the electrode 551X(i, j) and the other opening overlapping the electrode 551Y(i, j). Also, the insulating film 528 overlaps with the gap 551XY(i, j).
  • gap 551XY (i, j) ⁇ Configuration example of gap 551XY (i, j)>>
  • a gap 551XY(i,j) sandwiched between the electrode 551X(i,j) and the electrode 551Y(i,j) has, for example, a groove-like shape. Thereby, a step is formed along the groove. Also, a discontinuity or a thin portion is formed between the film deposited on the gap 551XY(i, j) and the film deposited on the electrode 551X(i, j).
  • a discontinuity or A thin portion is formed along the step.
  • the current flowing through the region 106XY(i, j) can be suppressed.
  • the current flowing between the layer 106X(i, j) and the layer 106Y(i, j) can be suppressed.
  • a display device 700 described in this embodiment includes a light emitting device 550X (i, j) and a light emitting device 550Y (i, j) (see FIG. 5).
  • Light emitting device 550Y(i,j) is adjacent to light emitting device 550X(i,j).
  • the display device 700 includes insulating films 528_1, 528_2, and 528_3 instead of the insulating film 528.
  • FIG. the different parts will be described in detail, and the above description will be used for the parts having the same configuration.
  • the insulating film 528_1 has openings, one of which overlaps with the electrode 551X(i, j) and the other of which overlaps with the electrode 551Y(i, j) (see FIG. 5). Also, the insulating film 528_1 has an opening that overlaps with the gap 551XY(i, j).
  • the insulating film 528_2 has openings, one of which overlaps with the electrode 551X(i, j) and the other of which overlaps with the electrode 551Y(i, j). Also, the insulating film 528_2 overlaps with the gap 551XY(i, j).
  • the insulating film 528_2 has regions in contact with the layer 104X(i,j), the unit 103X(i,j), the layer 106X(i,j) and the unit 103X2(i,j).
  • the insulating film 528_2 has a region in contact with the layer 104Y(i,j), the unit 103Y(i,j), the layer 106Y(i,j) and the unit 103Y2(i,j).
  • the insulating film 528_2 has a region in contact with the insulating film 521 .
  • the insulating film 528_3 has openings, one of which overlaps with the electrode 551X(i, j) and the other of which overlaps with the electrode 551Y(i, j). In addition, the insulating film 528_3 fills the groove formed in the region overlapping with the gap 551XY(i, j).
  • one conductive film can be used for the electrodes 552X(i, j) and the electrodes 552Y(i, j).
  • FIGS. 6A is a top view showing the light emitting device
  • FIG. 6B is a cross-sectional view of FIG. 6A taken along lines AB and CD.
  • This light-emitting device has a pixel portion 602 indicated by dotted lines and a driver circuit portion for controlling light emission of the light-emitting device.
  • the driver circuit portion includes a source line driver circuit 601 and a gate line driver circuit 603. .
  • the light-emitting device also includes a sealing substrate 604 and a sealant 605 , and the sealant 605 surrounds a space 607 .
  • a lead-out wiring 608 is a wiring for transmitting signals input to the source line driving circuit 601 and the gate line driving circuit 603, and a video signal, clock signal, Receives start signal, reset signal, etc.
  • a printed wiring board PWB
  • the light emitting device in this specification includes not only the main body of the light emitting device but also the state in which the FPC or PWB is attached thereto.
  • a driver circuit portion and a pixel portion are formed over the element substrate 610.
  • a source line driver circuit 601 which is the driver circuit portion and one pixel in the pixel portion 602 are shown.
  • the element substrate 610 is manufactured using a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester or acrylic resin, in addition to a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, etc. do it.
  • FRP Fiber Reinforced Plastics
  • PVF Polyvinyl Fluoride
  • acrylic resin acrylic resin
  • a transistor used for a pixel or a driver circuit there is no particular limitation on the structure of a transistor used for a pixel or a driver circuit.
  • an inverted staggered transistor or a staggered transistor may be used.
  • a top-gate transistor or a bottom-gate transistor may be used.
  • a semiconductor material used for a transistor is not particularly limited, and silicon, germanium, silicon carbide, gallium nitride, or the like can be used, for example.
  • an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn-based metal oxide, may be used.
  • the crystallinity of a semiconductor material used for a transistor is not particularly limited, either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region). may be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
  • an oxide semiconductor for a semiconductor device such as a transistor used in a touch sensor or the like, which is described later, in addition to the transistor provided in the pixel or the driver circuit.
  • an oxide semiconductor with a wider bandgap than silicon is preferably used. With the use of an oxide semiconductor having a wider bandgap than silicon, current in the off state of the transistor can be reduced.
  • the oxide semiconductor preferably contains at least indium (In) or zinc (Zn).
  • it is an oxide semiconductor containing an oxide represented by an In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf). is more preferred.
  • the semiconductor layer has a plurality of crystal parts, the c-axes of the crystal parts are oriented perpendicular to the formation surface of the semiconductor layer or the upper surface of the semiconductor layer, and grain boundaries are formed between adjacent crystal parts. It is preferable to use an oxide semiconductor film that does not have
  • the low off-state current of the above transistor having a semiconductor layer allows charge accumulated in a capacitor through the transistor to be held for a long time.
  • By applying such a transistor to a pixel it is possible to stop the driving circuit while maintaining the gradation of an image displayed in each display region. As a result, an electronic device with extremely low power consumption can be realized.
  • a base film is preferably provided in order to stabilize the characteristics of the transistor or the like.
  • an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, and can be manufactured as a single layer or a stacked layer.
  • the base film is formed using the sputtering method, CVD (Chemical Vapor Deposition) method (plasma CVD method, thermal CVD method, MOCVD (Metal Organic CVD) method, etc.), ALD (Atomic Layer Deposition) method, coating method, printing method, etc. can. Note that the base film may not be provided if it is not necessary.
  • the FET 623 represents one of transistors formed in the source line driver circuit 601 .
  • the drive circuit may be formed by various CMOS circuits, PMOS circuits, or NMOS circuits.
  • CMOS circuits complementary metal-oxide-semiconductor
  • PMOS circuits PMOS circuits
  • NMOS circuits CMOS circuits
  • a driver integrated type in which a driver circuit is formed over a substrate is shown, but this is not necessarily required, and the driver circuit can be formed outside instead of over the substrate.
  • the pixel portion 602 is formed of a plurality of pixels including a switching FET 611, a current control FET 612, and a first electrode 613 electrically connected to the drain thereof, but is not limited to this.
  • the pixel portion may be a combination of one or more FETs and a capacitive element.
  • an insulator 614 is formed to cover the end of the first electrode 613 .
  • it can be formed by using a positive photosensitive acrylic resin film.
  • a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 614 .
  • a positive photosensitive acrylic resin is used as the material of the insulator 614
  • a negative photosensitive resin or a positive photosensitive resin can be used as the insulator 614.
  • An EL layer 616 and a second electrode 617 are formed over the first electrode 613 .
  • a material used for the first electrode 613 functioning as an anode a material with a large work function is preferably used.
  • a single layer such as an ITO film, an indium tin oxide film containing silicon, an indium oxide film containing 2 wt % or more and 20 wt % or less of zinc oxide, a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film
  • a laminate of a titanium nitride film and a film containing aluminum as a main component, a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film can be used.
  • the wiring resistance is low, good ohmic contact can be obtained, and the wiring can function as
  • the EL layer 616 is formed by various methods such as an evaporation method using an evaporation mask, an inkjet method, a spin coating method, and the like.
  • the EL layer 616 has the structure described in any one of Embodiments 1 to 3.
  • FIG. Further, other materials forming the EL layer 616 may be low-molecular-weight compounds or high-molecular-weight compounds (including oligomers and dendrimers).
  • the second electrode 617 formed on the EL layer 616 and functioning as a cathode a material with a small work function (Al, Mg, Li, Ca, or an alloy or compound thereof (MgAg, MgIn, AlLi, etc.) is preferably used.
  • the second electrode 617 is a thin metal thin film and a transparent conductive film (ITO, 2 wt % or more and 20 wt % or less).
  • ITO transparent conductive film
  • Indium oxide containing zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc. is preferably used.
  • the first electrode 613, the EL layer 616, and the second electrode 617 form a light-emitting device.
  • the light-emitting device is the light-emitting device described in any one of Embodiments 1 to 3.
  • a plurality of light-emitting devices are formed in the pixel portion, and the light-emitting device in this embodiment includes the light-emitting device described in any one of Embodiments 1 to 3 and another structure. Both light emitting devices may be mixed.
  • the sealing substrate 604 is bonding to the element substrate 610 with the sealing material 605, a structure in which the light emitting device 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605 is obtained.
  • the space 607 is filled with a filler, which may be filled with an inert gas (nitrogen, argon, or the like) or may be filled with a sealing material. Deterioration due to the influence of moisture can be suppressed by forming a recess in the sealing substrate and providing a desiccant in the recess, which is a preferable configuration.
  • an epoxy resin or glass frit is preferably used for the sealant 605 .
  • these materials be materials that are impermeable to moisture and oxygen as much as possible.
  • a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, or the like can be used as a material for the sealing substrate 604.
  • a protective film may be provided on the second electrode.
  • the protective film may be formed of an organic resin film or an inorganic insulating film.
  • a protective film may be formed so as to cover the exposed portion of the sealant 605 .
  • the protective film can be provided to cover the exposed side surfaces of the front and side surfaces of the pair of substrates, the sealing layer, the insulating layer, and the like.
  • a material that does not allow impurities such as water to pass through easily can be used for the protective film. Therefore, it is possible to effectively suppress diffusion of impurities such as water from the outside to the inside.
  • oxides, nitrides, fluorides, sulfides, ternary compounds, metals or polymers can be used.
  • the protective film is preferably formed using a film formation method with good step coverage.
  • One of such methods is an atomic layer deposition (ALD) method.
  • a material that can be formed using the ALD method is preferably used for the protective film.
  • ALD method it is possible to form a dense protective film with reduced defects such as cracks or pinholes, or with a uniform thickness.
  • the protective film by forming the protective film using the ALD method, it is possible to form a uniform protective film with few defects on the surface having a complicated uneven shape or on the upper surface, side surface, and rear surface of the touch panel.
  • a light-emitting device manufactured using the light-emitting device described in any one of Embodiments 1 to 3 can be obtained.
  • the light-emitting device described in any one of Embodiments 1 to 3 is used for the light-emitting device in this embodiment, the light-emitting device can have favorable characteristics. Specifically, since the light-emitting device described in any one of Embodiments 1 to 3 has high emission efficiency, a light-emitting device with low power consumption can be obtained.
  • FIG. 7 shows an example of a full-color light-emitting device formed by forming a light-emitting device that emits white light and providing a colored layer (color filter) or the like.
  • FIG. 7A shows a substrate 1001, a base insulating film 1002, a gate insulating film 1003, a gate electrode 1006, a gate electrode 1007, a gate electrode 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, and pixels.
  • a portion 1040, a driving circuit portion 1041, electrodes 1024W, 1024R, 1024G, and 1024B of the light emitting device, a partition wall 1025, an EL layer 1028, an electrode 1029 of the light emitting device, a sealing substrate 1031, a sealing material 1032, and the like are illustrated. .
  • the colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) are provided on the transparent substrate 1033.
  • a black matrix 1035 may be further provided.
  • a transparent substrate 1033 provided with colored layers and a black matrix is aligned and fixed to the substrate 1001 .
  • the colored layers and the black matrix 1035 are covered with an overcoat layer 1036 .
  • FIG. 7B shows an example in which colored layers (a red colored layer 1034R, a green colored layer 1034G, and a blue colored layer 1034B) are formed between the gate insulating film 1003 and the first interlayer insulating film 1020.
  • the colored layer may be provided between the substrate 1001 and the sealing substrate 1031 .
  • the above-described light emitting device has a structure (bottom emission type) in which light is extracted from the side of the substrate 1001 on which the FET is formed (bottom emission type). ) as a light emitting device.
  • FIG. 8 shows a cross-sectional view of a top emission type light emitting device.
  • a substrate that does not transmit light can be used as the substrate 1001 . It is formed in the same manner as the bottom emission type light emitting device until the connection electrode for connecting the FET and the anode of the light emitting device is fabricated.
  • a third interlayer insulating film 1037 is formed to cover the electrode 1022 . This insulating film may play a role of planarization.
  • the third interlayer insulating film 1037 can be formed using the same material as the second interlayer insulating film, or other known materials.
  • the electrodes 1024W, 1024R, 1024G, and 1024B of the light-emitting device are anodes here, but may be cathodes. Further, in the case of a top emission type light emitting device as shown in FIG. 8, it is preferable that the electrodes 1024W, 1024R, 1024G, and 1024B are reflective electrodes.
  • the structure of the EL layer 1028 is the structure described in any one of Embodiments 1 to 3, and has an element structure capable of emitting white light.
  • sealing can be performed with a sealing substrate 1031 provided with colored layers (a red colored layer 1034R, a green colored layer 1034G, and a blue colored layer 1034B).
  • a black matrix 1035 may be provided on the sealing substrate 1031 so as to be positioned between pixels.
  • the colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer 1034B) or black matrix 1035 may be covered with an overcoat layer. Note that a light-transmitting substrate is used as the sealing substrate 1031 .
  • full-color display using four colors of red, green, blue, and white is shown here, there is no particular limitation, and full-color display using four colors of red, yellow, green, and blue or three colors of red, green, and blue is shown. may be displayed.
  • a microcavity structure can be preferably applied to a top emission type light emitting device.
  • a light-emitting device having a microcavity structure is obtained by using a reflective electrode as the first electrode and a semi-transmissive/semi-reflective electrode as the second electrode. At least an EL layer is provided between the reflective electrode and the semi-transmissive/semi-reflective electrode, and at least a light-emitting layer serving as a light-emitting region is provided.
  • the reflective electrode is assumed to be a film having a visible light reflectance of 40% to 100%, preferably 70% to 100%, and a resistivity of 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the semi-transmissive/semi-reflective electrode is a film having a visible light reflectance of 20% to 80%, preferably 40% to 70%, and a resistivity of 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • Light emitted from the light-emitting layer included in the EL layer is reflected by the reflective electrode and the semi-transmissive/semi-reflective electrode to resonate.
  • the light-emitting device can change the optical distance between the reflective electrode and the semi-transmissive/semi-reflective electrode by changing the thickness of the transparent conductive film, the composite material, the carrier transport material, or the like.
  • the reflective electrode and the semi-transmissive/semi-reflective electrode it is possible to intensify light with a wavelength that resonates and attenuate light with a wavelength that does not resonate.
  • the light reflected back by the reflective electrode interferes greatly with the light (first incident light) directly incident on the semi-transmissive/semi-reflective electrode from the light-emitting layer. It is preferable to adjust the optical distance between the electrode and the light-emitting layer to (2n-1) ⁇ /4 (where n is a natural number of 1 or more and ⁇ is the wavelength of emitted light to be amplified). By adjusting the optical distance, it is possible to match the phases of the first reflected light and the first incident light and further amplify the light emitted from the light emitting layer.
  • the EL layer may have a structure having a plurality of light-emitting layers or a structure having a single light-emitting layer.
  • a structure in which a plurality of EL layers are provided with a charge-generating layer interposed in one light-emitting device and one or more light-emitting layers are formed in each EL layer may be applied.
  • microcavity structure By having a microcavity structure, it is possible to increase the emission intensity of a specific wavelength in the front direction, so that power consumption can be reduced.
  • a microcavity structure that matches the wavelength of each color can be applied to all sub-pixels. A light-emitting device with excellent characteristics can be obtained.
  • the light-emitting device described in any one of Embodiments 1 to 3 is used for the light-emitting device in this embodiment, the light-emitting device can have favorable characteristics. Specifically, since the light-emitting device described in any one of Embodiments 1 to 3 has high emission efficiency, a light-emitting device with low power consumption can be obtained.
  • FIG. 9 shows a passive matrix light emitting device manufactured by applying the present invention.
  • 9A is a perspective view showing the light emitting device
  • FIG. 9B is a cross-sectional view of FIG. 9A cut along XY.
  • an EL layer 955 is provided between an electrode 952 and an electrode 956 over a substrate 951 .
  • the ends of the electrodes 952 are covered with an insulating layer 953 .
  • a partition layer 954 is provided over the insulating layer 953 .
  • the sidewalls of the partition layer 954 are inclined such that the distance between one sidewall and the other sidewall becomes narrower as the partition wall layer 954 approaches the substrate surface.
  • the cross section of the partition layer 954 in the short side direction is trapezoidal, and the bottom side (the side facing the same direction as the surface direction of the insulating layer 953 and in contact with the insulating layer 953) is the upper side (the surface of the insulating layer 953). direction and is shorter than the side that does not touch the insulating layer 953).
  • the light-emitting device described above can control a large number of minute light-emitting devices arranged in a matrix, so that the light-emitting device can be suitably used as a display device for expressing images.
  • FIGS. 10B is a top view of the lighting device
  • FIG. 10A is a cross-sectional view taken along line ef in FIG. 10B.
  • a first electrode 401 is formed over a light-transmitting substrate 400 which is a support.
  • the first electrode 401 corresponds to the electrode 551X in any one of Embodiments 1 to 3.
  • the first electrode 401 is formed using a light-transmitting material.
  • a pad 412 is formed on the substrate 400 for supplying voltage to the second electrode 404 .
  • An EL layer 403 is formed over the first electrode 401 .
  • the EL layer 403 corresponds to the combination of the layer 104, the unit 103X, and the layer 105 in Embodiment 2 or 3, or the combination of the layer 104, the unit 103X, the layer 106, the unit 103X2, and the layer 105, or the like. In addition, please refer to the said description about these structures.
  • a second electrode 404 is formed to cover the EL layer 403 .
  • the second electrode 404 corresponds to the electrode 552X in the second or third embodiment.
  • the second electrode 404 is made of a highly reflective material. A voltage is supplied to the second electrode 404 by connecting it to the pad 412 .
  • the lighting device described in this embodiment includes the light-emitting device including the first electrode 401 , the EL layer 403 , and the second electrode 404 . Since the light-emitting device has high emission efficiency, the lighting device in this embodiment can have low power consumption.
  • the substrate 400 on which the light emitting device having the above structure is formed and the sealing substrate 407 are fixed and sealed using the sealing materials 405 and 406 to complete the lighting device.
  • Either one of the sealing material 405 and the sealing material 406 may be used.
  • a desiccant can be mixed in the inner sealing material 406 (not shown in FIG. 10B), which can absorb moisture, leading to improved reliability.
  • an external input terminal can be formed.
  • an IC chip 420 or the like having a converter or the like mounted thereon may be provided thereon.
  • the lighting device described in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 3 as an EL element, and can have low power consumption. .
  • Embodiment 7 examples of electronic devices including the light-emitting device described in any one of Embodiments 1 to 3 as part thereof will be described.
  • the light-emitting device described in any one of Embodiments 1 to 3 has high emission efficiency and low power consumption.
  • the electronic device described in this embodiment can be an electronic device having a light-emitting portion with low power consumption.
  • Examples of electronic equipment to which the above light-emitting device is applied include television equipment (also referred to as television or television receiver), computer monitors, digital cameras, digital video cameras, digital photo frames, mobile phones (mobile phones, Also referred to as a mobile phone device), a portable game machine, a personal digital assistant, a sound reproducing device, a large game machine such as a pachinko machine, and the like. Specific examples of these electronic devices are shown below.
  • FIG. 11A shows an example of a television device.
  • a display portion 7103 is incorporated in a housing 7101 of the television device. Further, here, a structure in which the housing 7101 is supported by a stand 7105 is shown. Images can be displayed on the display portion 7103.
  • the display portion 7103 includes the light-emitting devices described in any one of Embodiments 1 to 3 arranged in matrix.
  • the television device can be operated by operation switches provided in the housing 7101 or a separate remote controller 7110 .
  • a channel or volume can be operated with an operation key 7109 included in the remote controller 7110, and an image displayed on the display portion 7103 can be operated.
  • the display portion 7107 may be provided in the remote controller 7110 to display information to be output.
  • the television apparatus is configured to include a receiver, modem, or the like.
  • the receiver can receive general television broadcasts, and by connecting to a wired or wireless communication network via a modem, it can be unidirectional (from the sender to the receiver) or bidirectional (from the sender to the receiver). It is also possible to communicate information between recipients, or between recipients, etc.).
  • FIG. 11B shows a computer including a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like.
  • this computer is manufactured by arranging the light-emitting devices described in any one of Embodiments 1 to 3 in a matrix and using them for the display portion 7203 .
  • the computer of FIG. 11B may be in the form of FIG. 11C.
  • the computer of FIG. 11C is provided with a second display section 7210 instead of the keyboard 7204 and pointing device 7206 .
  • the second display portion 7210 is of a touch panel type, and input can be performed by operating a display for input displayed on the second display portion 7210 with a finger or a dedicated pen. Further, the second display portion 7210 can display not only input display but also other images.
  • the display portion 7203 may also be a touch panel. Since the two screens are connected by a hinge, it is possible to prevent the screens from being damaged or damaged during
  • FIG. 11D shows an example of a mobile terminal.
  • the mobile terminal includes a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the mobile terminal includes a display portion 7402 in which the light-emitting devices described in any one of Embodiments 1 to 3 are arranged in matrix.
  • the mobile terminal illustrated in FIG. 11D can also have a structure in which information can be input by touching the display portion 7402 with a finger or the like.
  • an operation such as making a call or composing an email can be performed by touching the display portion 7402 with a finger or the like.
  • the screen of the display unit 7402 mainly has three modes.
  • the first is a display mode mainly for displaying images, and the second is an input mode mainly for inputting information such as characters.
  • the third is a display+input mode in which the two modes of the display mode and the input mode are mixed.
  • the display portion 7402 is set to a character input mode in which characters are mainly input, and characters displayed on the screen can be input. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402 .
  • the orientation of the mobile terminal (vertical or horizontal) is determined, and the screen display of the display portion 7402 is performed. You can switch automatically.
  • Switching of the screen mode is performed by touching the display portion 7402 or operating the operation button 7403 of the housing 7401 . Further, switching can be performed according to the type of image displayed on the display portion 7402 . For example, if the image signal to be displayed on the display unit is moving image data, the mode is switched to the display mode, and if the image signal is text data, the mode is switched to the input mode.
  • the input mode a signal detected by the optical sensor of the display portion 7402 is detected, and if there is no input by a touch operation on the display portion 7402 for a certain period of time, the screen mode is switched from the input mode to the display mode. may be controlled.
  • the display portion 7402 can also function as an image sensor.
  • personal authentication can be performed by touching the display portion 7402 with a palm or a finger and taking an image of a palm print, a fingerprint, or the like.
  • a backlight that emits near-infrared light or a sensing light source that emits near-infrared light for the display portion an image of a finger vein, a palm vein, or the like can be captured.
  • FIG. 12A is a schematic diagram showing an example of a cleaning robot.
  • the cleaning robot 5100 has a display 5101 arranged on the top surface, a plurality of cameras 5102 arranged on the side surface, a brush 5103 and an operation button 5104 . Although not shown, the cleaning robot 5100 has tires, a suction port, and the like on its underside.
  • the cleaning robot 5100 also includes various sensors such as an infrared sensor, an ultrasonic sensor, an acceleration sensor, a piezo sensor, an optical sensor, and a gyro sensor.
  • the cleaning robot 5100 also has wireless communication means.
  • the cleaning robot 5100 can run by itself, detect dust 5120, and suck the dust from a suction port provided on the bottom surface.
  • the cleaning robot 5100 can analyze the image captured by the camera 5102 and determine the presence or absence of obstacles such as walls, furniture, or steps. Further, when an object such as wiring that is likely to get entangled in the brush 5103 is detected by image analysis, the rotation of the brush 5103 can be stopped.
  • the display 5101 can display the remaining amount of the battery, the amount of sucked dust, or the like.
  • the route traveled by cleaning robot 5100 may be displayed on display 5101 .
  • the display 5101 may be a touch panel and the operation buttons 5104 may be provided on the display 5101 .
  • the cleaning robot 5100 can communicate with a portable electronic device 5140 such as a smart phone.
  • An image captured by the camera 5102 can be displayed on the portable electronic device 5140 . Therefore, the owner of the cleaning robot 5100 can know the state of the room even from outside.
  • the display on the display 5101 can also be checked with a portable electronic device 5140 such as a smartphone.
  • a light-emitting device of one embodiment of the present invention can be used for the display 5101 .
  • the robot 2100 shown in FIG. 12B comprises an arithmetic device 2110, an illumination sensor 2101, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107 and a movement mechanism 2108.
  • a microphone 2102 has a function of detecting a user's speech, environmental sounds, and the like. Also, the speaker 2104 has a function of emitting sound. Robot 2100 can communicate with a user using microphone 2102 and speaker 2104 .
  • the display 2105 has a function of displaying various information.
  • Robot 2100 can display information desired by the user on display 2105 .
  • the display 2105 may be equipped with a touch panel.
  • the display 2105 may be a detachable information terminal, and by installing it at a fixed position of the robot 2100, charging and data transfer are possible.
  • Upper camera 2103 and lower camera 2106 have the function of imaging the surroundings of robot 2100 . Further, the obstacle sensor 2107 can sense the presence or absence of an obstacle in the direction in which the robot 2100 moves forward using the movement mechanism 2108 . Robot 2100 uses upper camera 2103, lower camera 2106 and obstacle sensor 2107 to recognize the surrounding environment and can move safely.
  • the light-emitting device of one embodiment of the present invention can be used for the display 2105 .
  • FIG. 12C is a diagram showing an example of a goggle type display.
  • the goggle-type display includes, for example, a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, operation keys (including a power switch or an operation switch), connection terminals 5006, sensors 5007 (force, displacement, position, speed, Measures acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays function), a microphone 5008, a display portion 5002, a support portion 5012, an earphone 5013, and the like.
  • sensors 5007 force, displacement, position, speed, Measures acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell,
  • the light-emitting device of one embodiment of the present invention can be used for the display portions 5001 and 5002 .
  • FIG. 13 shows an example in which the light-emitting device described in any one of Embodiments 1 to 3 is used for a desk lamp which is a lighting device.
  • the desk lamp illustrated in FIG. 13 includes a housing 2001 and a light source 2002, and the lighting device described in Embodiment 6 may be used as the light source 2002.
  • FIG. 13 shows an example in which the light-emitting device described in any one of Embodiments 1 to 3 is used for a desk lamp which is a lighting device.
  • the desk lamp illustrated in FIG. 13 includes a housing 2001 and a light source 2002, and the lighting device described in Embodiment 6 may be used as the light source 2002.
  • FIG. 13 shows an example in which the light-emitting device described in any one of Embodiments 1 to 3 is used for a desk lamp which is a lighting device.
  • the desk lamp illustrated in FIG. 13 includes a housing 2001 and a light source 2002, and the lighting device described in Embodiment 6 may be used as the light source 2002.
  • FIG. 14 shows an example in which the light-emitting device described in any one of Embodiments 1 to 3 is used as an indoor lighting device 3001 . Since the light-emitting device described in any one of Embodiments 1 to 3 has high emission efficiency, the lighting device can have low power consumption. Further, since the light-emitting device described in any one of Embodiments 1 to 3 can have a large area, it can be used as a large-area lighting device. Further, since the light-emitting device described in any one of Embodiments 1 to 3 is thin, it can be used as a thin lighting device.
  • the light-emitting device described in any one of Embodiments 1 to 3 can also be mounted on the windshield or dashboard of an automobile.
  • FIG. 15 shows one mode in which the light-emitting device described in any one of Embodiments 1 to 3 is used for a windshield or a dashboard of an automobile.
  • Display regions 5200 to 5203 are display regions provided using the light-emitting device described in any one of Embodiments 1 to 3.
  • FIG. 15 shows one mode in which the light-emitting device described in any one of Embodiments 1 to 3 is used for a windshield or a dashboard of an automobile.
  • Display regions 5200 to 5203 are display regions provided using the light-emitting device described in any one of Embodiments 1 to 3.
  • a display area 5200 and a display area 5201 are display devices in which the light-emitting device described in any one of Embodiments 1 to 3 is mounted on the windshield of an automobile.
  • the first electrode and the second electrode are formed using light-transmitting electrodes, so that the opposite side can be seen through. It can be a see-through display device. If the display is in a see-through state, even if it is installed on the windshield of an automobile, it can be installed without obstructing the view.
  • a driving transistor or the like a light-transmitting transistor such as an organic transistor using an organic semiconductor material or a transistor using an oxide semiconductor is preferably used.
  • a display region 5202 is a display device including the light-emitting device described in any one of Embodiments 1 to 3 provided in a pillar portion.
  • the display area 5202 by displaying an image from an imaging means provided on the vehicle body, it is possible to complement the field of view blocked by the pillars.
  • the display area 5203 provided on the dashboard part can compensate for the blind spot and improve safety by displaying the image from the imaging means provided on the outside of the vehicle for the field of view blocked by the vehicle body. can be done. By projecting an image so as to complement the invisible part, safety can be confirmed more naturally and without discomfort.
  • Display area 5203 can provide a variety of information by displaying navigation information, speed or rotation, distance traveled, remaining fuel, gear status, air conditioning settings, and the like.
  • the display items or layout can be appropriately changed according to the user's preference. Note that these pieces of information can also be provided in the display areas 5200 to 5202 . Further, the display regions 5200 to 5203 can also be used as a lighting device.
  • FIG. 16A to 16C also show a foldable personal digital assistant 9310.
  • FIG. FIG. 16A shows the mobile information terminal 9310 in an unfolded state.
  • FIG. 16B shows the mobile information terminal 9310 in the middle of changing from one of the unfolded state and the folded state to the other.
  • FIG. 16C shows the portable information terminal 9310 in a folded state.
  • the portable information terminal 9310 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • the display panel 9311 is supported by three housings 9315 connected by hinges 9313 .
  • the display panel 9311 may be a touch panel (input/output device) equipped with a touch sensor (input device).
  • the display panel 9311 can be reversibly transformed from the unfolded state to the folded state by bending between the two housings 9315 via the hinges 9313 .
  • the light-emitting device of one embodiment of the present invention can be used for the display panel 9311 .
  • the application range of the light-emitting device including the light-emitting device described in any one of Embodiments 1 to 3 is extremely wide, and the light-emitting device can be applied to electronic devices in all fields. be.
  • an electronic device with low power consumption can be obtained.
  • Example 1 In this example, a light-emitting device 1 of one embodiment of the present invention will be described with reference to FIGS.
  • FIG. 17A is a diagram illustrating the configuration of a light emitting device 550X.
  • FIG. 17B is a schematic diagram for explaining the emission spectrum of the light-emitting material used for the light-emitting device 1. As shown in FIG.
  • FIG. 18 is a diagram illustrating the current density-luminance characteristics of the light-emitting device 1.
  • FIG. 19 is a diagram illustrating luminance-current efficiency characteristics of the light-emitting device 1.
  • FIG. 20 is a diagram illustrating voltage-luminance characteristics of the light-emitting device 1.
  • FIG. 21 is a diagram illustrating the voltage-current characteristics of the light emitting device 1.
  • FIG. 22 is a diagram illustrating luminance-blue index characteristics of the light-emitting device 1.
  • the blue index (BI) is one of the indices representing the characteristics of blue light emitting devices, and is a value obtained by dividing current efficiency (cd/A) by y chromaticity.
  • current efficiency cd/A
  • y chromaticity a value obtained by dividing the current efficiency (cd/A) by the y chromaticity.
  • the value obtained by dividing the current efficiency (cd/A) by the y chromaticity is an index showing the usefulness of the blue light emitting device.
  • a blue light-emitting device with a high BI is suitable for realizing a display device with a wide color gamut and high efficiency.
  • FIG. 23 is a diagram for explaining an emission spectrum when the light-emitting device 1 emits light with a luminance of 1000 cd/m 2 .
  • FIG. 24 is a diagram for explaining temporal change characteristics of normalized luminance when Comparative Device 1 and Light Emitting Device 1 are caused to emit light at a constant current density of 50 mA/cm 2 .
  • the manufactured light-emitting device 1 described in this example has the same configuration as the light-emitting device 550X (see FIG. 17A).
  • a light-emitting device 550X of one embodiment of the present invention includes an electrode 551X, an electrode 552X, a layer 111X, a layer 111X2, and a layer 112_21.
  • Layer 111X is sandwiched between electrode 551X and electrode 552X
  • layer 111X2 is sandwiched between electrode 552X and layer 111X
  • layer 112_21 is sandwiched between layer 111X2 and layer 111X.
  • Layer 111X comprises a luminescent material EM1, which has an emission spectrum with a maximum at wavelength ⁇ 1, and layer 111X has an ordinary refractive index n1 at wavelength ⁇ 1.
  • Layer 111X2 comprises a luminescent material EM2, which has an emission spectrum with a maximum at wavelength ⁇ 2, and layer 111X2 has an ordinary refractive index n2 at wavelength ⁇ 2.
  • the layer 112_21 has an ordinary refractive index n31 lower than the ordinary refractive index n1 at the wavelength ⁇ 1, and the layer 112_21 has an ordinary refractive index n32 lower than the ordinary refractive index n2 at the wavelength ⁇ 2.
  • layer 112_21 has a distance d1 from the center plane of layer 111X
  • layer 112_21 has a distance d2 from the center plane of layer 111X2
  • layer 112_21 has a thickness t3 Prepare.
  • the distance d1, the distance d2, the thickness t3, the wavelength ⁇ 1, the wavelength ⁇ 2, the ordinary refractive index n1, the ordinary refractive index n2, the ordinary refractive index n31, and the ordinary refractive index n32 are the following formulas (1) and (2) are in a relationship that satisfies
  • Table 1 shows the configuration of the light-emitting device 1. Structural formulas of materials used for the light-emitting device described in this example are shown below. In addition, in the tables of the present embodiment, subscripts and superscripts are shown in standard sizes for convenience. For example, subscripts used for abbreviations and superscripts used for units are shown in standard sizes in the tables. These descriptions in the table can be read in consideration of the description in the specification.
  • the distance d1 is 50.1 nm and the distance d2 is 20 nm.
  • the thickness t3 is 40 nm.
  • the wavelength ⁇ 1 and the wavelength ⁇ 2 are 455 nm
  • the ordinary refractive index n1 and the ordinary refractive index n2 are 1.93
  • the ordinary refractive index n31 and the ordinary refractive index n32 are 1.73.
  • a spectroscopic ellipsometer (M-2000U manufactured by JA Woollam Japan) was used to measure the refractive index of the material.
  • a thin film of the material having a thickness of about 50 nm formed on a quartz substrate was used as a measurement sample, and a vacuum deposition method was used to form the thin film.
  • a reflective film REF was formed. Specifically, it was formed by a sputtering method using silver (abbreviation: Ag) as a target.
  • the reflective film REF contains Ag and has a thickness of 100 nm.
  • an electrode 551X was formed on the reflective film REF. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • the electrode 551X contains ITSO and has a thickness of 5 nm and an area of 4 mm 2 (2 mm ⁇ 2 mm).
  • the substrate on which the electrode 551X was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds.
  • the base material was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and was subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • a third step layer 104 was formed over electrode 551X. Specifically, the materials were co-evaporated using a resistance heating method.
  • OCHD-003 contains fluorine and has a molecular weight of 672.
  • layer 112_11 was formed on layer 104 . Specifically, the materials were deposited using a resistance heating method.
  • layer 112_11 comprises mmtBumTPoFBi-04 and has a thickness of 35 nm.
  • the film of mmtBumTPoFBi-04 also has a giant surface potential (GSP), and its potential slope divided by the film thickness (Slope of GSP) is 16.2 mV/nm.
  • GSP giant surface potential
  • Slope of GSP the potential slope divided by the film thickness
  • the ordinary refractive index of the film of mmtBumTPoFBi-04 was 1.72 or more and 1.73 or less at a wavelength of 455 nm or more and 465 nm or less, and the ordinary light refractive index at 633 nm was 1.66.
  • layer 112_12 was formed on layer 112_11. Specifically, the materials were deposited using a resistance heating method.
  • the layer 112_12 contains N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP) and has a thickness of 50 nm.
  • layer 112_13 was formed on layer 112_12. Specifically, the materials were deposited using a resistance heating method.
  • Layer 112_13 is N-3′,5′-ditertiarybutyl-1,1′-biphenyl-4-yl-N-1,1′-biphenyl-2-yl-9,9,-dimethyl-9H- It contains fluorene-2-amine (abbreviation: mmtBuBioFBi) and has a thickness of 40 nm.
  • the mmtBuBioFBi film had an ordinary refractive index of 1.73 to 1.74 at a wavelength of 455 nm to 465 nm, and an ordinary refractive index of 1.66 at 633 nm.
  • layer 112_14 was formed on layer 112_13. Specifically, the materials were deposited using a resistance heating method.
  • layer 112_14 comprises DBfBB1TP and has a thickness of 10 nm.
  • layer 111X was formed on layer 112_14. Specifically, the materials were co-evaporated using a resistance heating method.
  • DPhA-tBu4DABNA 2,12-di(tert-butyl)-5,9-di (4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]
  • layer 113_11 was formed on layer 111X. Specifically, the materials were deposited using a resistance heating method.
  • the ⁇ N- ⁇ NPAnth film also has a giant surface potential (GSP), and its potential gradient divided by the film thickness (GSP slope) is 10.8 mV/nm.
  • GSP giant surface potential
  • the ⁇ N- ⁇ NPAnth film had an ordinary refractive index of 1.92 or more and 1.93 or less at a wavelength of 455 nm or more and 465 nm or less, and an ordinary refractive index of 1.81 at 633 nm.
  • the layer 113_11 is 6-(1,1′-biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm). ) with a thickness of 10 nm.
  • the layer 113_12 contains 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) and has a thickness of 20 nm.
  • layer 106_2 was formed on layer 113_12. Specifically, the materials were deposited using a resistance heating method.
  • the layer 106_2 contains lithium oxide (abbreviation: Li2O) and has a thickness of 0.1 nm.
  • layer 112_21 was formed on layer 106_1. Specifically, the materials were deposited using a resistance heating method.
  • layer 112_21 comprises mmtBumTPoFBi-04 and has a thickness of 40 nm.
  • layer 112_22 was formed on layer 112_21. Specifically, the materials were deposited using a resistance heating method.
  • layer 112_22 comprises DBfBB1TP and has a thickness of 10 nm.
  • layer 111X2 was formed on layer 112_22. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113_21 was formed on layer 111X2. Specifically, the materials were deposited using a resistance heating method.
  • layer 113_21 comprises 6mBP-4Cz2PPm and has a thickness of 10 nm.
  • layer 113_22 was formed on layer 113_21. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 105 was formed on layer 113_22. Specifically, the materials were deposited using a resistance heating method.
  • the layer 105 contains lithium fluoride (abbreviation: LiF) and has a thickness of 2 nm.
  • LiF lithium fluoride
  • an electrode 552X was formed on layer 105; Specifically, the materials were co-evaporated using a resistance heating method.
  • a twentieth step layer CAP was formed over electrode 552X. Specifically, the materials were deposited using a resistance heating method.
  • the layer CAP contains 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc) and has a thickness of 65 nm.
  • Table 2 shows main initial characteristics when the fabricated light-emitting device emits light at a luminance of about 1000 cd/m 2 .
  • Table 2 shows LT90, which is the elapsed time until the luminance drops to 90% of the initial luminance when the light emitting device emits light at a constant current density (50 mA/cm 2 ).
  • Table 2 also lists the properties of other light-emitting devices whose constructions are described below.
  • Light-emitting device 1 was found to exhibit good properties. For example, Light Emitting Device 1 exhibited a higher current efficiency than Comparative Device 1. In addition, the light-emitting device 1 exhibited a higher blue index value than the comparative device 1. Further, when comparing the maximum values of current efficiency and blue index, light-emitting device 1 clearly showed higher values.
  • the manufactured comparative device 1 described in this reference example has the same configuration as the light emitting device 550X (see FIG. 17A).
  • Comparative Device 1 differs from Light Emitting Device 1 in that PCBBiF is used for layer 112_21 instead of mmtBumTPoFBi-04.
  • the ordinary refractive index of the PCBBiF film at a wavelength of 455 nm is 1.93.
  • a comparative device 1 described in this reference example was produced using a method having the following steps.
  • the method for manufacturing Comparative Device 1 is different from the method for manufacturing Light Emitting Device 1 in that PCBBiF is used instead of mmtBumTPoFBi-04 in the step of forming layer 112_21.
  • PCBBiF is used instead of mmtBumTPoFBi-04 in the step of forming layer 112_21.
  • the different parts are described in detail, and the above description is used for the parts using the same method.
  • layer 112_21 was formed on layer 106_1. Specifically, the materials were deposited using a resistance heating method.
  • layer 112_21 comprises PCBBiF and has a thickness of 40 nm.
  • Comparative Device 1 When powered, Comparative Device 1 emitted light EL1 (see FIG. 17A). The operating characteristics of Comparative Device 1 were measured at room temperature (see FIGS. 18-23). A spectroradiometer (SR-UL1R manufactured by Topcon Corporation) was used to measure luminance, CIE chromaticity and emission spectrum.
  • Table 2 shows main initial characteristics when the manufactured comparative device emits light at a luminance of about 1000 cd/m 2 .
  • Table 2 shows LT90, which is the elapsed time until the luminance drops to 90% of the initial luminance when the light emitting device emits light at a constant current density (50 mA/cm 2 ).
  • Table 2 also lists the properties of other light-emitting devices whose constructions are described below.
  • CAP layer, LN: layer, 103X: unit, 103X2: unit, 103Y: unit, 103Y2: unit, 104: layer, 104X: layer, 104Y: layer, 105: layer, 105X: layer, 105Y: layer, 106: layer, 106_1: layer, 106_2: layer, 106_3: layer, 106X: layer, 106XY: region, 106Y: layer, 111X: layer, 111X2: layer, 112: layer, 112_2: layer, 112_11: layer, 112_12: layer, 112_13: Layer, 112_14: Layer, 112_21: Layer, 112_22: Layer, 113: Layer, 113_: Layer, 113_2: Layer, 113_11: Layer, 113_12: Layer, 113_21: Layer, 113_22: Layer, 400: Substrate, 401: Electrode 403: EL layer 404: Electrode 405: Seal

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015216040A (ja) * 2014-05-12 2015-12-03 キヤノン株式会社 有機発光素子
JP2016004761A (ja) * 2014-06-19 2016-01-12 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル及び有機ｅｌ表示装置

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015216040A (ja) * 2014-05-12 2015-12-03 キヤノン株式会社 有機発光素子
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Cited By (3)

* Cited by examiner, † Cited by third party
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WO2025191525A1 (en) 2024-03-14 2025-09-18 Boegli-Gravures Sa Method and device for manufacturing an embossed sheet of substrate with a controlled thickness value and a reduced content of clusters
WO2026022730A1 (en) 2024-07-24 2026-01-29 Boegli-Gravures Sa Method and device for manufacturing an embossed sheet of substrate to produce a controlled thickness value and a reduced content of clusters
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