WO2023045477A1 - 制造三维结构的方法 - Google Patents

制造三维结构的方法 Download PDF

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Publication number
WO2023045477A1
WO2023045477A1 PCT/CN2022/103373 CN2022103373W WO2023045477A1 WO 2023045477 A1 WO2023045477 A1 WO 2023045477A1 CN 2022103373 W CN2022103373 W CN 2022103373W WO 2023045477 A1 WO2023045477 A1 WO 2023045477A1
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layer
slice
groove
layers
model
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French (fr)
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史为
王贤浩
邱婷婷
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Carl Zeiss (shanghai) Co Ltd
Carl Zeiss Microscopy GmbH
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Carl Zeiss (shanghai) Co Ltd
Carl Zeiss Microscopy GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T19/00—Manipulating three-dimensional [3D] models or images for computer graphics

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  • the present application relates to the field of optics and processing technology, in particular, to a method of manufacturing a three-dimensional structure.
  • Focused Ion Beam is a device that uses focused ion beams (Ga+, He+, etc.) to act on the sample to achieve etching and deposition processing on the surface of the sample. Because the focused ion beam has a certain energy, when the focused ion beam bombards the sample surface, the atoms on the sample surface obtain energy and escape from the surface, thereby realizing the function of etching the sample surface. When etching, because the ion beam is focused, the etching process can be carried out in the designated area according to the designed pattern.
  • focused ion beams Ga+, He+, etc.
  • the particles (secondary electrons) excited by the ion beam react with these precursors to realize different materials (such as Pt, C, SiO 2 , W, Au etc.) graphics deposition.
  • the current common focused ion beam equipment is a dual-beam structure, and the two energy beams form a certain angle.
  • a focused ion beam device with a three-beam structure for example, three beams of He, Ne, and Ga ions.
  • Focused ion beam is a processing method that acts vertically on the surface of the sample, and the sidewalls of the etched or deposited shape can only be perpendicular to the surface of the sample. If you want to process a three-dimensional structure with non-vertical sidewalls, it is more difficult to realize the focused ion beam, but in fact, most of the three-dimensional structures have non-vertical sidewalls. Because for the processing of three-dimensional structure, it is difficult to realize the focused ion beam.
  • the starting point of the present application is to provide a method for manufacturing a three-dimensional structure, so as to solve the above-mentioned problems in the prior art.
  • Embodiments of the present application provide a method of manufacturing a three-dimensional structure, the method comprising:
  • the data of the multiple slice layers are imported into processing software, and the multiple slice layers are removed and/or deposited layer by layer on the blank, so as to obtain the three-dimensional structure.
  • the plurality of sliced layers are removed and/or deposited layer by layer on the blank using an energy beam.
  • the energy beam includes at least one of the following: laser beam, electron beam, plasma and ion beam.
  • the number of slice layers can be adjusted.
  • the spacing between every two adjacent slice layers can be adjusted. That is to say, the interval between two adjacent slice layers can be flexibly controlled as required. If the intervals are set to be the same, the advantage is that the processing parameters can be set in batches in the processing software. If the intervals are set to be different, the advantage is that the number of repeated graphics of the same size can be reduced, and at the same time, the processing software can set the processing parameters of the graphics separately. In addition, for a drawn 3D model, a part of slice layers of the 3D model can be selected for processing according to actual needs. Therefore, for the same three-dimensional model, different three-dimensional structures may be obtained after processing different slice layers.
  • the data of the slicing layer is exported from the slicing software in the form of a vector file and imported into the processing software.
  • the advantage of using vector files is that it occupies less storage space, has good controllability during processing, and is very suitable for processing complex shapes.
  • the three-dimensional structure is a hemispherical groove
  • the method specifically includes:
  • the plurality of circular sliced layers are removed layer by layer on the blank by using an energy beam, so as to obtain the hemispherical groove.
  • the three-dimensional structure is a hemisphere formed in a truncated conical groove, then the method specifically includes:
  • the plurality of concentric annular sliced layers are removed layer by layer on the blank by means of an energy beam, thereby obtaining hemispheres formed in frustoconical grooves.
  • Embodiments of the present application also provide a hemispherical groove manufactured by the above-mentioned method according to the present application.
  • Embodiments of the present application also provide a hemisphere formed in a frustoconical groove, the hemisphere formed in the truncated conical groove being manufactured by the above method according to the present application.
  • Embodiments of the present application also provide a cone, which is manufactured by the above-mentioned method according to the present application.
  • the embodiment of the present application also provides an irregularly shaped truncated truncated column, which is manufactured by the above-mentioned method according to the present application.
  • Embodiments of the present application also provide a spherical cap structure formed in a hemispherical groove, the spherical cap structure formed in the hemispherical groove is manufactured by the above method according to the present application.
  • Embodiments of the present application also provide a microlens, which is manufactured by the method according to the present application, and the specific form of the microlens includes at least one of the following: a hemispherical groove, a truncated cone Hemispheres in shaped grooves, cones, irregularly shaped frustum columns, spherical cap structures formed in hemispherical grooves, and two one or more hemispheres.
  • Embodiments of the present application also provide a method of manufacturing a spherical cap structure formed in a hemispherical groove, the method comprising:
  • each slice layer The outer diameter gradually decreases from the maximum value, and the inner diameter of each slice layer gradually increases from basically 0 until the outer diameter and inner diameter of the last slice layer are basically equal to the diameter of the bottom surface of the spherical cap.
  • the plurality of concentric annular slice layers are removed layer by layer from the blank, so as to obtain the spherical cap structure formed in the hemispherical groove.
  • Embodiments of the present application also provide two or more hemispheres formed in a cylindrical groove, a frusto-conical groove or a hemispherical groove, different hemispheres have the same radius or different radii , the two or more hemispheres formed in the cylindrical groove, the frusto-conical groove or the hemispherical groove are manufactured by the above method according to the present application.
  • the 3D model is decomposed into multiple slice layers by slicing the 3D model, and the 3D structure is obtained by removing and/or depositing the slice layers layer by layer, so that precise 3D structures can be manufactured in a simple and reliable manner .
  • FIG. 1 shows a flowchart of a method for manufacturing a three-dimensional structure according to a specific embodiment of the present application.
  • FIG. 2A shows a perspective view of a three-dimensional model of a hemispherical groove drawn by drawing software according to another specific embodiment of the present application.
  • Fig. 2B shows a cross-sectional view along the axis of symmetry of a three-dimensional model of a hemispherical groove according to another embodiment of the present application.
  • FIG. 2C shows a schematic diagram of slicing a three-dimensional model of a hemispherical groove according to another specific embodiment of the present application.
  • FIG. 2D shows a hemispherical groove manufactured by the method of the present application according to another embodiment of the present application.
  • FIG. 3A shows a perspective view of a three-dimensional model of a hemisphere formed in a frustoconical groove drawn by drawing software according to yet another embodiment of the present application.
  • Fig. 3B shows a cross-sectional view of a three-dimensional model according to yet another specific embodiment of the present application, and the parts to be removed are shown with hatching.
  • Fig. 3C shows a schematic diagram of slicing a three-dimensional model according to yet another specific embodiment of the present application.
  • FIG. 3D shows the variation trend of each concentric circular slice layer according to yet another specific embodiment of the present application.
  • FIG. 4 shows a perspective view of a three-dimensional model of a cone manufactured by deposition with the aid of the method of the present application.
  • FIG. 5A shows a perspective view of a three-dimensional model of an irregular-shaped frusto-conical column manufactured by deposition by means of the method of the present application.
  • FIG. 5B shows a cross-sectional view of a three-dimensional model of an irregular-shaped frusto-conical column manufactured by deposition by means of the method of the present application.
  • Fig. 6 shows a cross-sectional view of a three-dimensional model of a spherical cap structure in a hemispherical groove manufactured by means of the method of the present application.
  • Fig. 7 shows a cross-sectional view of a three-dimensional model of two hemispheres in a cylindrical groove manufactured by means of the method of the present application, wherein the two hemispheres have the same radius.
  • Fig. 8 shows a cross-sectional view of a three-dimensional model of two hemispheres in a cylindrical groove manufactured by means of the method of the present application, wherein the two hemispheres have different radii.
  • FIG. 1 shows a flowchart of a method for manufacturing a three-dimensional structure according to a specific embodiment of the present application. As shown in Figure 1, the method includes:
  • Step S101 drawing a three-dimensional model of the part that needs to be removed and/or deposited from the blank in order to obtain a three-dimensional structure.
  • the 3D model can be drawn using existing drawing software, such as simulation software such as AutoCAD, SolidWork, 3D Fusion, CST, and Zemax.
  • the drawn 3D model can be exported in (.stl) format.
  • drawing software such as AutoCAD, SolidWork, 3D Fusion, CST, and Zemax.
  • the drawn 3D model can be exported in (.stl) format.
  • Fig. 2 A and 2B have shown respectively the three-dimensional view of the three-dimensional model of the hemispherical groove drawn and along the three-dimensional model A cross-sectional view of the axis of symmetry.
  • Step S102 slicing the 3D model in slicing software, so as to decompose the 3D model into multiple slice layers.
  • the interval between every two adjacent slice layers can be set to 0.1, so as to obtain 301 layers of slices, and the coordinates of each slice layer on the Z axis are 0, -0.1, -0.2, -0.3, -0.4, ... -29.8, -29.9, -30.
  • the number of slice layers (that is, the interval between adjacent slice layers) can also be adjusted. The more slice layers, the more precise the hemispherical grooves processed.
  • Step S103 import the data of multiple slice layers into the processing software, and remove and/or deposit multiple slice layers layer by layer on the blank, so as to obtain a three-dimensional structure.
  • the slice layer data obtained in the slicing software is preferably exported from the slicing software and imported into the processing software in a format (eg, .ely format) that can be directly opened by the processing software (eg, SmartFIB).
  • the data of the slicing layer is exported from the slicing software in the form of a vector file and imported into the processing software.
  • using an energy beam for example, a focused ion beam or a laser beam
  • to remove multiple circular slice layers layer by layer on the blank for example, a square solid blank
  • three-dimensional structures of arbitrary shapes can be fabricated, not limited to the above-mentioned hemispherical grooves.
  • the part of the truncated cone that does not overlap with the hemisphere is the three-dimensional part that needs to be removed from the blank Model.
  • 3A and 3B show a perspective view and a cross-sectional view along the axis of symmetry of the three-dimensional model, respectively, of a drawn three-dimensional model of a hemisphere formed in a frustoconical groove.
  • FIG. 3B the parts that need to be removed are shown in hatching.
  • FIG. 3C slicing is carried out in a slicing software along a direction perpendicular to the symmetry axis of the 3D model, thereby decomposing the 3D model into multiple concentric ring-shaped slice layers with different inner diameters and outer diameters.
  • FIG. 3D shows the variation trend of the sliced layers of each concentric ring.
  • the outer diameter D1 of each slice layer gradually decreases from the maximum value, and the inner diameter D2 of each slice layer gradually increases from substantially zero, until the outer diameter D1 and inner diameter D2 of the last slice layer are both Basically equal to the diameter of a hemisphere.
  • an energy beam for example, a focused ion beam or a laser beam
  • the blank for example, a square solid blank
  • the 3D model is decomposed into multiple slice layers by slicing the 3D model, and the 3D structure is obtained by removing the slice layers layer by layer, so that accurate three-dimensional structure.
  • the hemispherical grooves and the hemispheres formed in the frustoconical grooves manufactured by the method of the present application can be used to process micron-scale microlenses in the field of optoelectronics, and can also be used as microdevices in the field of electronic semiconductors.
  • the material When the material has single-photon emission properties (such as negatively charged nitrogen vacancies in diamond), it can be applied to quantum storage, magnetic sensors, single-photon emission sources, and more. Microlenses can enhance the detection efficiency of single photons and improve their applications in these fields.
  • single-photon emission properties such as negatively charged nitrogen vacancies in diamond
  • Processing microlenses in silicon waveguide materials can enhance the edge coupling effect of silicon optical integrated circuits, thereby improving the utilization efficiency of silicon waveguides.
  • the method of manufacturing three-dimensional structures involved in this application is not limited to material removal processing, but can also be used for three-dimensional structure processing in additive manufacturing (ie, deposition of different materials).
  • additive manufacturing ie, deposition of different materials.
  • materials are heated and bonded to create three-dimensional structures.
  • Material removal and additive manufacturing can also be used together to create complex three-dimensional structures. Therefore, the method for manufacturing a three-dimensional structure of the present application can not only manufacture three-dimensional structures symmetrical to the central axis, but also various asymmetric three-dimensional structures and complex three-dimensional structures can be processed.
  • different three-dimensional structures can also be obtained.
  • multiple different 3D models can be drawn and sliced, and the processing of complex 3D structures can be realized through the combination of 3D models. It is also possible to draw multiple identical 3D models, and process multiple identical 3D structures at different positions of the same sample, thereby realizing array processing of 3D structures.
  • Figure 4 shows a perspective view of a three-dimensional model of a cone manufactured by means of the method of the present application.
  • the cone can be produced by material removal or deposition.
  • FIG. 5A and 5B show a three-dimensional model of an irregularly shaped frustoconical column fabricated by means of the method of the present application.
  • FIG. 5A shows a perspective view of a three-dimensional model of an irregular-shaped frustum column
  • FIG. 5B shows a cross-sectional view of a three-dimensional model of an irregular-shaped frustum column.
  • the irregularly shaped frustum can be fabricated by material removal or deposition.
  • Fig. 6 shows a cross-sectional view of a three-dimensional model of a spherical cap structure in a hemispherical groove manufactured by means of the method of the present application.
  • the hemispherical groove can be fabricated by material removal using the method described in FIGS. 2A-2D of the present application, and then the spherical cap structure can be deposited in the hemispherical groove by additive manufacturing.
  • the method of the present application can also be used to manufacture the spherical cap structure in the hemispherical groove in the following way: first, slice along the direction perpendicular to the axis of symmetry of the three-dimensional model in the slice software, so that the three-dimensional The model is decomposed into a plurality of concentric annular slice layers with different inner diameters and outer diameters, wherein the outer diameter of each slice layer gradually decreases from the maximum value, and the inner diameter of each slice layer gradually increases from substantially zero.
  • the plurality of concentric annular sliced layers are removed layer by layer on the blank by using an energy beam, thereby obtaining A spherical cap structure formed in a hemispherical groove.
  • Fig. 7 shows a cross-sectional view of a three-dimensional model of two hemispheres in a cylindrical recess made by means of the method of the present application. where both hemispheres have the same radius.
  • Fig. 8 shows a cross-sectional view of a three-dimensional model of two hemispheres in a cylindrical groove manufactured by means of the method of the present application.
  • the two hemispheres have different radii.
  • the above description is only an example, rather than limiting the application.
  • the method may have more, fewer or different steps, and the order, inclusion and function of the steps may be different from those described and illustrated. For example, often multiple steps can be combined into a single step, and a single step can be split into multiple steps.
  • the sequential changes of each step are also within the protection scope of the present application.
  • the essence of the technical solution of this application or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of software products.
  • the computer software products are stored in a storage medium, including several instructions. So that a computer device (which may be a personal computer, a server, or a network device, etc.) or a processor or a microcontroller executes all or part of the steps of the methods described in various embodiments of the present application.
  • the aforementioned program can be stored in a computer-readable storage medium.
  • the program executes the steps including the above-mentioned method embodiments; and the aforementioned storage medium includes: ROM, RAM, magnetic disk or optical disk and other various media that can store program codes.

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Abstract

一种制造三维结构的方法，方法包括：绘制为了获得三维结构而需要从坯材上去除和/或沉积的部分的三维模型（S101）；在切片软件中对三维模型进行切片，从而将三维模型分解成多个切片层（S102）；将多个切片层的数据导入到加工软件中，在坯材上逐层地去除和/或沉积多个切片层，从而获得三维结构（S103）。采用对三维模型进行切片的方式将三维模型分解成多个切片层，通过逐层地去除和/沉积切片层来获得三维结构，从而能够以简单可靠的方式制造精准的三维结构。

Description

制造三维结构的方法
相关申请的交叉引用
本申请要求于2021年9月22日递交的中国专利申请第202111105699.4号的优先权和权益，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本申请涉及光学和加工技术领域，具体而言，涉及一种制造三维结构的方法。
背景技术
聚焦离子束(Focused Ion Beam，FIB)是一种利用聚焦离子束(Ga+、He+等)作用到样品上，在样品表面实现刻蚀和沉积加工的设备。因为聚焦离子束具有一定的能量，当聚焦离子束轰击到样品表面时，样品表面的原子获得能量从表面逃逸，从而实现对样品表面进行刻蚀的功能。在进行刻蚀的时候，因为离子束是聚焦的，所以可以在指定区域按照设计的图形进行刻蚀加工。当离子束作用到样品表面，同时还有不同的化学前驱体时，离子束激发的粒子(二次电子)和这些前驱体发生反应，实现不同材料(如Pt、C、SiO 2、W、Au等等)的图形沉积。
目前常见的聚焦离子束设备是双束结构，两束能量束成一定角度。此外，还有三束结构(例如，He、Ne、Ga三束离子)的聚焦离子束设备。
聚焦离子束是一种垂直作用于样品表面的加工方式，其刻蚀或者沉积的形状侧壁都只能垂直于样品表面。如果想要加工非垂直侧壁的三维结构，聚焦离子束实现起来就比较难，但是实际上，大部分的三维结构都是具有非垂直侧壁的。因为对于三维结构的加工，聚焦离子束难以实现。
发明内容
本申请的出发点在于，提供一种制造三维结构的方法，从而解决现有技术中存在的上述问题。
本申请的实施例提供了一种制造三维结构的方法，所述方法包括：
绘制为了获得三维结构而需要从坯材上去除和/或沉积的部分的三维模型，
在切片软件中对所述三维模型进行切片，从而将所述三维模型分解成多个切片层，
将所述多个切片层的数据导入到加工软件中，在坯材上逐层地去除和/或沉积所述多个切片层，从而获得所述三维结构。
可选地，利用能量束在坯材上逐层地去除和/或沉积所述多个切片层。
可选地，所述能量束包括以下至少之一：激光束、电子束、等离子和离子束。
可选地，切片层的数量能够被调节。
可选地，每两个相邻的切片层之间的间隔能够被调节。也就是说，两个相邻的切片层之间的间隔可以根据需要灵活控制。如果设置成间隔相同，好处是可以在加工软件中批量设置加工参数。如果设置成间隔不同，好处是可以减少相同尺寸的重复图形数量，同时，加工软件可以分别设置图形的加工参数。另外，对于一个绘制好的三维模型，可以根据实际需要选取该三维模型的一部分切片层进行加工。由此，对于同一个三维模型，对不同的切片层进行加工后，所获得的三维结构可以不相同。
可选地，切片层的数据以矢量文件的形式从所述切片软件中被导出并且被导入到所述加工软件中。采用矢量文件的优势在于，其占用的存储空间小，加工过程中的可控性好，并且非常适合加工复杂形状。
可选地，所述三维结构为半球形凹槽，则所述方法具体包括：
绘制半球形凹槽的三维模型，
在切片软件中沿着垂直于所述三维模型的对称轴的方向进行切片，从而将所述三维模型分解成具有不同直径的多个圆形的切片层，
利用能量束在坯材上逐层地去除所述多个圆形的切片层，从而获得所述半球形凹槽。
可选地，所述三维结构为形成在平截圆锥形凹槽中的半球体，则所述方法具体包括：
绘制半球体以及以所述半球体的底面为小圆、以所述半球体的从底面到顶点的距离为高的平截圆锥体，所述平截圆锥体与所述半球体不重合的部分为需要从坯材上去除的部分的三维模型，
在切片软件中沿着垂直于所述三维模型的对称轴的方向进行切片，从而将所述三维模型分解成具有不同的内径和外径的多个同心圆环形的切片层，其中，各切片层的外径从最大值开始逐渐减小，各切片层的内径从基本上为0开始逐渐增大，直到最后一个切片层的外径和内径都基本上等于半球体的直径，
利用能量束在坯材上逐层地去除所述多个同心圆环形的切片层，从而获得形成在平截圆锥形凹槽中的半球体。
本申请的实施例还提供了一种半球形凹槽，所述半球形凹槽是通过根据本申请的上述方法制造的。
本申请的实施例还提供了一种形成在平截圆锥形凹槽中的半球体，所述形成在平截圆锥形凹槽中的半球体是通过根据本申请的上述方法制造的。
本申请的实施例还提供了一种圆锥体，所述圆锥体是通过根据本申请的上述方法制造的。
本申请的实施例还提供了一种不规则形状锥台柱，所述不规则形状锥台柱是通过根据本申请的上述方法制造的。
本申请的实施例还提供了一种形成在半球形凹槽中的球冠结构，所述形成在半球形凹槽中的球冠结构是通过根据本申请的上述方法制造的。
本申请的实施例还提供了一种微透镜，所述微透镜是通过根据本申请的方法制造的，所述微透镜的具体形式包括以下至少之一：半球形凹槽、形成在平截圆锥形凹槽中的半球体、圆锥体、不规则形状锥台柱、形成在 半球形凹槽中的球冠结构和形成在圆柱形凹槽、平截圆锥形凹槽或者半球形凹槽中的两个或者两个以上的半球。
本申请的实施例还提供了一种制造形成在半球形凹槽中的球冠结构的方法，所述方法包括：
在切片软件中沿着垂直于三维模型的对称轴的方向进行切片，从而将所述三维模型分解成具有不同的内径和外径的多个同心圆环形的切片层，其中，各切片层的外径从最大值开始逐渐减小，各切片层的内径从基本上为0开始逐渐增大，直到最后一个切片层的外径和内径都基本上等于球冠的底面的直径，利用能量束在坯材上逐层地去除所述多个同心圆环形的切片层，从而获得形成在半球形凹槽中的球冠结构。
本申请的实施例还提供了一种形成在圆柱形凹槽、平截圆锥形凹槽或者半球形凹槽中的两个或者两个以上的半球，不同的半球具有相同的半径或不同的半径，所述形成在圆柱形凹槽、平截圆锥形凹槽或者半球形凹槽中的两个或者两个以上的半球是通过根据本申请的上述方法制造的。
本申请的实施例的制造三维结构的方法至少具有以下优点：
本申请中，采用对三维模型进行切片的方式将三维模型分解成多个切片层，通过逐层地去除和/或沉积切片层来获得三维结构，从而能够以简单可靠的方式制造精准的三维结构。
附图说明
本申请的其他细节及优点将通过下文提供的详细描述而变得显而易见。应理解的是，下列附图仅仅是示意性的且并非按比例绘制，因而不能视为对本申请的限制，下文将参照附图来进行详细描述，其中：
图1示出了本申请的一个具体实施方式的制造三维结构的方法流程图。
图2A示出了本申请的另一个具体实施方式的通过制图软件绘制的半球形凹槽的三维模型的立体图。
图2B示出了本申请的另一个具体实施方式的沿着半球形凹槽的三维 模型的对称轴的截面图。
图2C示出了本申请的另一个具体实施方式的对半球形凹槽的三维模型进行切片的示意图。
图2D示出了本申请的另一个具体实施方式的通过本申请的方法制造的半球形凹槽。
图3A示出了本申请的再一个具体实施方式的通过制图软件绘制的形成在平截圆锥形凹槽中的半球体的三维模型的立体图。
图3B示出了本申请的再一个具体实施方式的三维模型的截面图，需要去除的部分以阴影线示出。
图3C示出了本申请的再一个具体实施方式的对三维模型进行切片的示意图。
图3D示出了本申请的再一个具体实施方式的各同心圆环形的切片层的变化趋势。
图4示出了借助于本申请的方法通过沉积的方式制造的圆锥体的三维模型的立体图。
图5A示出了借助于本申请的方法通过沉积的方式制造的不规则形状锥台柱的三维模型的立体图。
图5B示出了借助于本申请的方法通过沉积的方式制造的不规则形状锥台柱的三维模型的截面图。
图6示出了借助于本申请的方法制造的半球形凹槽中的球冠结构的三维模型的截面图。
图7示出了借助于本申请的方法制造的圆柱形凹槽中的两个半球的三维模型的截面图，其中，两个半球具有相同的半径。
图8示出了借助于本申请的方法制造的圆柱形凹槽中的两个半球的三维模型的截面图，其中，两个半球具有不同的半径。
具体实施方式
下面参照附图描述本申请的实施例。在下面的描述中，阐述了许多具 体细节以便使所属技术领域的技术人员更全面地了解和实现本申请。但是，对所属技术领域的技术人员明显的是，本申请的实现可不具有这些具体细节中的一些。此外，应当理解的是，本申请并不局限于所介绍的特定实施例。相反，可以考虑用下面所述的特征和要素的任意组合来实施本申请，而无论它们是否涉及不同的实施例。因此，下面的方面、特征、实施例和优点仅作说明之用，而不应看作是权利要求的要素或限定，除非在权利要求中明确提出。
现参照图1，示出了本申请的一个具体实施方式的制造三维结构的方法流程图。如图1所示，该方法包括：
步骤S101，绘制为了获得三维结构而需要从坯材上去除和/或沉积的部分的三维模型。
可以利用现有的制图软件绘制三维模型，例如，AutoCAD、SolidWork、3D Fusion、CST以及Zemax等仿真模拟软件。绘制的三维模型可以以(.stl)格式导出。例如，如果制造的三维结构是半球形凹槽，则利用制图软件绘制半球形凹槽的三维模型，图2A和2B分别示出了绘制的半球形凹槽的三维模型的立体图和沿着三维模型的对称轴的截面图。
步骤S102，在切片软件中对三维模型进行切片，从而将三维模型分解成多个切片层。
还是以制造半球形凹槽为例，如图2C所示，在切片软件中沿着垂直于半球形凹槽的三维模型的对称轴的方向(即图2C中的Z轴)进行切片，从而将三维模型分解成具有不同直径的多个圆形的切片层。每个切片层可以近似地认为是一个二维圆形。继续如图2C所示，假设半球形凹槽的半径为30，为了便于加工，每两个相邻的切片层之间的间隔可以相同。可以设定每两个相邻的切片层之间的间隔为0.1，从而获得301层切片，各切片层在Z轴上的坐标分别为0、-0.1、-0.2、-0.3、-0.4、…-29.8、-29.9、-30。切片层的数量(也就是相邻的切片层之间的间隔)也可以调节，切片层越多，加工出的半球形凹槽就越精准。
步骤S103，将多个切片层的数据导入到加工软件中，在坯材上逐层地 去除和/或沉积多个切片层，从而获得三维结构。
在切片软件中获得的切片层的数据优选地以能够被加工软件(例如，SmartFIB)直接打开的格式(例如，.ely格式)从切片软件导出并且导入至加工软件。优选地，切片层的数据以矢量文件的形式从切片软件中被导出并且被导入到加工软件中。之后，利用能量束(例如，聚焦离子束或激光束)在坯材(例如，方形实心体坯材)上逐层地去除多个圆形的切片层，从而获得半球形凹槽，图2D示意性地示出了通过本申请的方法制造的半球形凹槽。
利用本申请的方法的原理，可以制造任意形状的三维结构，而不限于上面提到的半球形凹槽。例如，利用本申请的方法，还可以制造形成在平截圆锥形凹槽中的半球体。首先，绘制半球体以及以半球体的底面为小圆、以半球体的半径为高的平截圆锥体，平截圆锥体与半球体不重合的部分为需要从坯材上去除的部分的三维模型。图3A和3B分别示出了绘制的形成在平截圆锥形凹槽中的半球体的三维模型的立体图和沿着三维模型的对称轴的截面图。在图3B中，需要去除的部分以阴影线示出。接着，如图3C所示，在切片软件中沿着垂直于三维模型的对称轴的方向进行切片，从而将三维模型分解成具有不同的内径和外径的多个同心圆环形的切片层。图3D示出了各同心圆环形的切片层的变化趋势。如图3D所示，各切片层的外径D1从最大值开始逐渐减小，各切片层的内径D2从基本上为0开始逐渐增大，直到最后一个切片层的外径D1和内径D2都基本上等于半球体的直径。最后，利用能量束(例如，聚焦离子束或激光束)在坯材(例如，方形实心体坯材)上逐层地去除多个同心圆环形的切片层，从而获得形成在平截圆锥形凹槽中的半球体。
本申请中的上述具体实施方式中，采用对三维模型进行切片的方式将三维模型分解成多个切片层，通过逐层地去除切片层来获得三维结构，从而能够以简单可靠的方式制造精准的三维结构。
借助于本申请的方法制造的半球形凹槽以及形成在平截圆锥形凹槽中的半球体可用作光电领域加工微米尺度的微透镜，也可用作电子半导体领 域的微器件等等。
在光电学研究领域，如何提升发光材料的光信号检测效率，是一个非常重要的问题。通过在材料上加工微观曲面结构(即，微透镜)，可以提高被加工位置的光信号收集效率。本方法可以通过直接将理论得到的三维模型转换成可直接加工的矢量文件，得到精准的微透镜。
当材料具有单光子发射性能时(比如金刚石中有带负电的氮空位)，由于其本身在室温下具有适用于量子存储的具有长自旋相干时间的局部电子和核自旋，可以应用于量子存储、磁性传感器、单光子发射源等等。而微透镜可以增强单光子的被检测效率，提高其在这些领域的应用。
在硅波导材料中加工微透镜，可以增强硅光集成电路的边缘耦合效应，从而提高硅波导的利用效率。
另外，申请人希望指出，本申请所涉及的制造三维结构的方法，不仅限于材料的去除加工，其还可以用于增材制造(即，沉积不同材料)的三维结构加工。例如，利用激光束、电子束、等离子和/或离子束作为热源，加热材料使之结合，以制造三维结构。材料的去除加工和增材制造还可以配合使用，以制造复杂三维结构。因此，本申请的制造三维结构的方法不仅可以制造中心轴对称的三维结构，各种不对称三维结构和复杂三维结构都可以进行加工。另外，通过调节样品表面和能量束的夹角，结合切片或沉积技术，亦可获得不同三维结构。例如，在加工过程中，可以绘制多个不同的三维模型，进行切片，通过三维模型的组合从而实现复杂的三维结构的加工。亦可绘制多个相同的三维模型，并且在同一样品的不同位置加工多个相同的三维结构，从而实现三维结构的阵列加工。
以下再列举几个根据本申请的方法制造的三维结构的示例：
图4示出了借助于本申请的方法制造的圆锥体的三维模型的立体图。该圆锥体可以通过材料去除或沉积的方式制造。
图5A和5B示出了借助于本申请的方法制造的不规则形状锥台柱的三维模型。其中，图5A示出了不规则形状锥台柱的三维模型的立体图，图5B示出了不规则形状锥台柱的三维模型的截面图。该不规则形状锥台柱可 以通过材料去除或沉积的方式制造。
图6示出了借助于本申请的方法制造的半球形凹槽中的球冠结构的三维模型的截面图。为了制造该三维结构，可以例如首先利用本申请的图2A-2D所述的方法通过材料去除的方式制造半球形凹槽，然后通过增材制造的方式在半球形凹槽中沉积球冠结构。或者，也可以借助于本申请的方法采用过如下方式制造半球形凹槽中的球冠结构：首先，在切片软件中沿着垂直于三维模型的对称轴的方向进行切片，从而将所述三维模型分解成具有不同的内径和外径的多个同心圆环形的切片层，其中，各切片层的外径从最大值开始逐渐减小，各切片层的内径从基本上为0开始逐渐增大，直到最后一个切片层的外径和内径都基本上等于球冠的底面的直径，然后，利用能量束在坯材上逐层地去除所述多个同心圆环形的切片层，从而获得形成在半球形凹槽中的球冠结构。
图7示出了借助于本申请的方法制造的圆柱形凹槽中的两个半球的三维模型的截面图。其中，两个半球具有相同的半径。为了制造该三维结构，可以例如首先利用本申请的方法通过材料去除的方式制造圆柱形凹槽，然后通过增材制造的方式在圆柱形凹槽中沉积具有相同的半径的两个半球。
图8示出了借助于本申请的方法制造的圆柱形凹槽中的两个半球的三维模型的截面图。其中，两个半球具有不同的半径。为了制造该三维结构，可以例如首先利用本申请的方法通过材料去除的方式制造圆柱形凹槽，然后通过增材制造的方式在圆柱形凹槽中沉积具有不同的半径的两个半球。
应指出的是，以上描述仅为示例，而不是对本申请的限制。在本申请的其他实施例中，该方法可具有更多、更少或不同的步骤，且各步骤之间的顺序、包含和功能等关系可以与所描述和图示的不同。例如，通常多个步骤可以合并为单个步骤，单个步骤也可以拆分为多个步骤。对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，对各步骤的先后变化也在本申请的保护范围之内。
本申请的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的全部或部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)或处理器或微控制器执行本申请各个实施方式所述方法的全部或部分步骤。
本领域普通技术人员可以理解：实现上述各方法实施例的全部或部分步骤可以通过程序指令相关的硬件来完成。前述的程序可以存储于一计算机可读取存储介质中。该程序在执行时，执行包括上述各方法实施例的步骤；而前述的存储介质包括：ROM、RAM、磁碟或者光盘等各种可以存储程序代码的介质。
虽然本申请已以较佳实施例披露如上，但本申请并非限于此。任何本领域技术人员，在不脱离本申请的精神和范围内所作的各种更动与修改，均应纳入本申请的保护范围内，因此本申请的保护范围应当以权利要求所限定的范围为准。

Claims (16)

  1. 一种制造三维结构的方法，其特征在于，所述方法包括：
    绘制为了获得三维结构而需要从坯材上去除和/或沉积的部分的三维模型，
    在切片软件中对所述三维模型进行切片，从而将所述三维模型分解成多个切片层，
    将所述多个切片层的数据导入到加工软件中，在坯材上逐层地去除和/或沉积所述多个切片层，从而获得所述三维结构。
  2. 根据权利要求1所述的方法，其中，利用能量束在坯材上逐层地去除和/或沉积所述多个切片层。
  3. 根据权利要求1所述的方法，其中，所述能量束包括以下至少之一：激光束、电子束、等离子和离子束。
  4. 根据权利要求1所述的方法，其中，切片层的数量能够被调节。
  5. 根据权利要求1所述的方法，其中，每两个相邻的切片层之间的间隔能够被调节。
  6. 根据权利要求1所述的方法，其中，切片层的数据以矢量文件的形式从所述切片软件中被导出并且被导入到所述加工软件中。
  7. 根据权利要求1-6中任一项所述的方法，其中，所述三维结构为半球形凹槽，则所述方法具体包括：
    绘制半球形凹槽的三维模型，
    在切片软件中沿着垂直于所述三维模型的对称轴的方向进行切片，从而将所述三维模型分解成具有不同直径的多个圆形的切片层，
    利用能量束在坯材上逐层地去除所述多个圆形的切片层，从而获得所述半球形凹槽。
  8. 根据权利要求1-6中任一项所述的方法，其中，所述三维结构为形成在平截圆锥形凹槽中的半球体，则所述方法具体包括：
    绘制半球体以及以所述半球体的底面为小圆、以所述半球体的从底面到顶点的距离为高的平截圆锥体，所述平截圆锥体与所述半球体不重合的 部分为需要从坯材上去除的部分的三维模型，
    在切片软件中沿着垂直于所述三维模型的对称轴的方向进行切片，从而将所述三维模型分解成具有不同的内径和外径的多个同心圆环形的切片层，其中，各切片层的外径从最大值开始逐渐减小，各切片层的内径从基本上为0开始逐渐增大，直到最后一个切片层的外径和内径都基本上等于半球体的直径，
    利用能量束在坯材上逐层地去除所述多个同心圆环形的切片层，从而获得形成在平截圆锥形凹槽中的半球体。
  9. 一种半球形凹槽，其特征在于，所述半球形凹槽是通过根据权利要求7所述的方法制造的。
  10. 一种形成在平截圆锥形凹槽中的半球体，其特征在于，所述形成在平截圆锥形凹槽中的半球体是通过根据权利要求8所述的方法制造的。
  11. 一种圆锥体，其特征在于，所述圆锥体是通过根据权利要求1-6中任一项所述的方法制造的。
  12. 一种不规则形状锥台柱，其特征在于，所述不规则形状锥台柱是通过根据权利要求1-6中任一项所述的方法制造的。
  13. 一种形成在半球形凹槽中的球冠结构，其特征在于，所述形成在半球形凹槽中的球冠结构是通过根据权利要求1-6中任一项所述的方法制造的。
  14. 一种制造权利要求13中的形成在半球形凹槽中的球冠结构的方法，所述方法包括：
    在切片软件中沿着垂直于三维模型的对称轴的方向进行切片，从而将所述三维模型分解成具有不同的内径和外径的多个同心圆环形的切片层，其中，各切片层的外径从最大值开始逐渐减小，各切片层的内径从基本上为0开始逐渐增大，直到最后一个切片层的外径和内径都基本上等于球冠的底面的直径，利用能量束在坯材上逐层地去除所述多个同心圆环形的切片层，从而获得形成在半球形凹槽中的球冠结构。
  15. 一种形成在圆柱形凹槽、平截圆锥形凹槽或者半球形凹槽中的两个或者两个以上的半球，不同的半球具有相同的半径或不同的半径，其特征在于，所述形成在圆柱形凹槽、平截圆锥形凹槽或者半球形凹槽中的两个或者两个以上的半球是通过根据权利要求1-6中任一项所述的方法制造的。
  16. 一种微透镜，其特征在于，所述微透镜是通过根据权利要求1-6中任一项所述的方法制造的，所述微透镜的具体形式包括以下至少之一：半球形凹槽、形成在平截圆锥形凹槽中的半球体、圆锥体、不规则形状锥台柱、形成在半球形凹槽中的球冠结构和形成在圆柱形凹槽、平截圆锥形凹槽或者半球形凹槽中的两个或者两个以上的半球。
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Publication number Priority date Publication date Assignee Title
CN113865958A (zh) * 2021-09-22 2021-12-31 卡尔蔡司（上海）管理有限公司 制造三维结构的方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1048996A (zh) * 1989-07-14 1991-02-06 马霍股份公司 用激光束在工件中制造空腔的方法和装置
US6021358A (en) * 1996-09-18 2000-02-01 Sachs; George A. Three dimensional model and mold making method using thick-slice subtractive fabrication
CN1306898A (zh) * 2000-02-01 2001-08-08 华中理工大学 快速原型方法
US20020100750A1 (en) * 2001-01-31 2002-08-01 Hanmin Shi Rapid prototyping method using 3-D laser inner cutting
JP2003071530A (ja) * 2001-06-18 2003-03-11 Moltec:Kk 金属シート積層造形物と金属シート積層造形物の造形装置及び造形方法
US20060292709A1 (en) * 2003-02-28 2006-12-28 Japan Science And Technology Agency Method for fabricatiing three-dimensional microstructure by fib-cvd and drawing system for three-dimensional microstruture
CN104407441A (zh) * 2014-05-31 2015-03-11 福州大学 一种集成成像3d显示微透镜阵列及其制作方法
CN104401002A (zh) * 2014-05-31 2015-03-11 福州大学 一种基于3d打印的曲面微透镜阵列制作方法
CN105057892A (zh) * 2015-07-28 2015-11-18 中国科学院力学研究所 一种脉冲激光三维雕刻方法
CN106216862A (zh) * 2016-07-20 2016-12-14 华中科技大学 一种基于电弧增材和高能束流减材的复合制造方法及装置
CN107914014A (zh) * 2017-11-24 2018-04-17 西北有色金属研究院 一种纯钨金属零件的电子束选区熔化成形方法
CN111872571A (zh) * 2020-08-04 2020-11-03 广州三义激光科技有限公司 一种激光超硬材料深雕工艺
CN113865958A (zh) * 2021-09-22 2021-12-31 卡尔蔡司（上海）管理有限公司 制造三维结构的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1247444C (zh) * 2004-01-06 2006-03-29 华中科技大学 与集成电路工艺兼容的三维微结构模压刻蚀方法
WO2013163300A1 (en) * 2012-04-25 2013-10-31 University Of Louisville Research Foundation, Inc. Automated mask file generation from 3-d modeling
US10046547B2 (en) * 2015-11-24 2018-08-14 Xerox Corporation Systems and methods for implementing three dimensional (3D) object, part and component manufacture including displacement/vibration welded or heat staked laminates
JP6876455B2 (ja) * 2017-02-07 2021-05-26 日本電子株式会社 観察方法および試料作製方法
CN108995219B (zh) * 2018-05-31 2021-04-20 共享智能铸造产业创新中心有限公司 一种层厚可变的切片方法、3d打印方法及3d打印的产品
EP3733379B1 (en) * 2019-04-29 2023-11-22 DENTSPLY SIRONA Inc. Method of determining layer thicknesses of 3d models for additive manufacturing

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1048996A (zh) * 1989-07-14 1991-02-06 马霍股份公司 用激光束在工件中制造空腔的方法和装置
US6021358A (en) * 1996-09-18 2000-02-01 Sachs; George A. Three dimensional model and mold making method using thick-slice subtractive fabrication
CN1306898A (zh) * 2000-02-01 2001-08-08 华中理工大学 快速原型方法
US20020100750A1 (en) * 2001-01-31 2002-08-01 Hanmin Shi Rapid prototyping method using 3-D laser inner cutting
JP2003071530A (ja) * 2001-06-18 2003-03-11 Moltec:Kk 金属シート積層造形物と金属シート積層造形物の造形装置及び造形方法
US20060292709A1 (en) * 2003-02-28 2006-12-28 Japan Science And Technology Agency Method for fabricatiing three-dimensional microstructure by fib-cvd and drawing system for three-dimensional microstruture
CN104407441A (zh) * 2014-05-31 2015-03-11 福州大学 一种集成成像3d显示微透镜阵列及其制作方法
CN104401002A (zh) * 2014-05-31 2015-03-11 福州大学 一种基于3d打印的曲面微透镜阵列制作方法
CN105057892A (zh) * 2015-07-28 2015-11-18 中国科学院力学研究所 一种脉冲激光三维雕刻方法
CN106216862A (zh) * 2016-07-20 2016-12-14 华中科技大学 一种基于电弧增材和高能束流减材的复合制造方法及装置
CN107914014A (zh) * 2017-11-24 2018-04-17 西北有色金属研究院 一种纯钨金属零件的电子束选区熔化成形方法
CN111872571A (zh) * 2020-08-04 2020-11-03 广州三义激光科技有限公司 一种激光超硬材料深雕工艺
CN113865958A (zh) * 2021-09-22 2021-12-31 卡尔蔡司（上海）管理有限公司 制造三维结构的方法

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