WO2023035235A1

WO2023035235A1 - Resonator, filter, and electronic device

Info

Publication number: WO2023035235A1
Application number: PCT/CN2021/117752
Authority: WO
Inventors: 鲍景富; 何艺雯; 梁起; 黄裕霖; 李昕熠; 高宗智
Original assignee: 华为技术有限公司; 电子科技大学
Priority date: 2021-09-10
Filing date: 2021-09-10
Publication date: 2023-03-16

Abstract

The present application relates to the field of resonators, and provides a resonator, a filter, and an electronic device, for use in improving the quality factor of the resonator. The resonator comprises a piezoelectric substrate, an interdigital transducer, and a reflector. The reflector comprises a reflecting grating, a first gate bus bar, a second gate bus bar, a first additional gate bus bar, and a second additional gate bus bar. The reflecting grating comprises first reflecting gratings and second reflecting gratings that are alternately arranged in parallel in a first direction. The first gate bus bar and the second gate bus bar are distributed on two sides of the reflecting grating in a direction perpendicular to the first direction; and the first gate bus bar is connected to the first reflecting gratings, and the second gate bus bar is connected to the second reflecting gratings. The first additional gate bus bar is located in an area between the first gate bus bar and the second reflecting gratings, and is connected to the first reflecting gratings. The second additional gate bus bar is located in an area between the second gate bus bar and the first reflecting gratings, and is connected to the second reflecting gratings.

Description

Resonators, Filters and Electronics

technical field

The present application relates to the field of resonators, in particular to a resonator, filter and electronic equipment.

Background technique

The energy loss of a resonator directly determines its quality factor. The smaller the energy loss of a resonator, the higher its quality factor, and the better the performance of the resonator. Therefore, improving the quality factor of a resonator has become the key to improving the performance of a resonator One of the main ways.

Contents of the invention

Embodiments of the present application provide a resonator, a filter and electronic equipment, which can improve the quality factor of the resonator.

The present application provides a resonator, which includes a piezoelectric substrate, an interdigital transducer disposed on the piezoelectric substrate, and two reflectors, and the two reflectors are respectively located on both sides of the interdigital transducer. Wherein, the reflector includes a reflection grid, a first grid bus bar, a second grid bus bar, a first additional grid bus bar, and a second additional grid bus bar. The reflective grating includes: first reflective gratings and second reflective gratings arranged in parallel and alternately. The parallel arrangement direction of the first reflective grid and the second reflective grid is the first direction. The first grid bus bar and the second grid bus bar are distributed on both sides of the reflective grid along the vertical first direction; and the first grid bus bar is connected to the end of the first reflective grid, and the second grid bus bar is connected to the second reflective grid. grid end connections. The first additional grid bus bar is located in the area between the first grid bus bar and the second reflective grid; the first additional grid bus bar extends along the first direction, and the first additional grid bus bar is connected to the first reflective grid. The second additional grid bus bar is located in the area between the second grid bus bar and the first reflective grid; the second additional grid bus bar extends along the first direction, and the second additional grid bus bar is connected to the second reflective grid.

Compared with the setting of single bus bar in the reflective structure in the related art, the reflective structure set in the embodiment of the present application adopts the double bus bar design. By adding the first additional grid bus bar and the second additional grid bus bar, it can An additional gap is formed between the additional grid bus bar and the first grid bus bar, and between the second additional grid bus bar and the second grid bus bar, through which the scattering of the acoustic surface wave can be suppressed and the extra energy can be reduced Loss, thereby improving the energy confinement range of the reflective structure in the reflective grid region, thereby improving the Q value of the resonator.

In some possible implementation manners, since the first additional grid bus bar and the second additional grid bus bar are used to form an additional gap area, the width of the first additional grid bus bar may be set to be smaller than the width of the first grid bus bar; The width of the second additional grid bus bar is smaller than the width of the second grid bus bar.

In some possible implementation manners, the piezoelectric substrate includes a piezoelectric thin film. The interdigital transducer and the reflector are arranged on the surface of the piezoelectric film. The surface of the interdigital transducer, the reflector and the piezoelectric film is covered with a temperature compensation layer. That is, the resonator may be a temperature compensated surface acoustic wave resonator.

In some possible implementation manners, an end of the second reflective grid is connected to the first additional grid bus bar; an end of the first reflective grid is connected to the second additional grid bus bar. That is, the first additional grid bus bar is connected to both the first reflection grid and the second reflection grid, and the second additional grid bus bar is connected to both the first reflection grid and the second reflection grid.

In some possible implementation manners, the interdigital transducer includes: an interdigital electrode, a first bus bar, and a second bus bar; the interdigital electrode includes: a plurality of first interdigital electrodes arranged side by side and alternately along the first direction and the second interdigitated electrode; in the vertical first direction, the first bus bar and the second bus bar are distributed on both sides of the interdigitated electrode; the first bus bar is connected to the end of the first interdigitated electrode, and the second The bus bar is connected to the ends of the second interdigitated electrodes.

In some possible implementation manners, the piezoelectric substrate includes a substrate, a temperature compensation layer and a piezoelectric thin film sequentially disposed on the substrate; the interdigital transducer and the reflector are disposed on the surface of the piezoelectric thin film. That is, the resonator may be an extremely high performance surface acoustic wave resonator.

In some possible implementation manners, the interdigital transducer includes: interdigital electrodes, a first bus bar, a second bus bar, a first additional bus bar, and a second additional bus bar. The interdigital electrodes include: a plurality of first interdigital electrodes and second interdigital electrodes arranged side by side and alternately along the first direction. Along the vertical first direction, the first bus bar and the second bus bar are distributed on both sides of the interdigital electrode; the first bus bar is connected to the end of the first interdigital electrode, and the second bus bar is connected to the second interdigital electrode. The ends of the electrodes are connected. The first additional bus bar is located in the area between the first bus bar and the second interdigital electrode; the first additional bus bar extends along the first direction, and the first additional bus bar is connected to the first interdigital electrode. The second additional bus bar is located in the area between the second bus bar and the first interdigital electrode; the first additional bus bar extends along the first direction, and the second additional bus bar is connected to the second interdigital electrode. In this case, an additional gap (gap) can be formed between the first bus bar and the first additional bus bar, and between the second bus bar and the second additional bus bar as a high-sonic region for energy confinement. , reducing the extra energy loss, thereby improving the energy confinement range of the reflective structure in the reflective grid region, and improving the Q value of the resonator.

In some possible implementation manners, since the first additional bus bar and the second additional bus bar are used to form an additional gap area, the width of the first additional bus bar can be set to be smaller than the width of the first bus bar; the second additional bus bar The width of the bar is greater than the width of the second bus bar.

In some possible implementation manners, the interdigital transducer further includes a first dummy electrode and a second dummy electrode. Wherein, the first dummy electrode is disposed between the second interdigital electrode and the first additional bus bar, and the first dummy electrode is connected to the first additional bus bar. The second dummy electrode is disposed between the first interdigital electrode and the second additional bus bar, and the second dummy electrode is connected to the second additional bus bar. In this case, energy scattering can be suppressed in the regions of the first dummy electrode and the second dummy electrode, thereby reducing the leakage of the shear wave toward the additional bus bar and improving the suppression of the shear wave.

In some possible implementation manners, the reflector further includes a first dummy reflection grid and a second dummy reflection grid. The first dummy reflective grid is arranged between the second reflective grid and the first additional grid bus bar, and the first dummy reflective grid is connected to the first additional grid bus bar. The second dummy reflection grid is arranged between the first reflection grid and the second additional grid bus bar, and the second dummy reflection grid is connected with the second additional grid bus bar. In this case, energy scattering can be suppressed in the regions of the first dummy reflection grating and the second dummy reflection grating, thereby reducing the leakage of the shear wave toward the additional bus bar and improving the suppression of the shear wave.

In some possible implementation manners, the two ends of the interdigital electrodes and the reflective grid are respectively provided with piston restraining structures (piston).

The embodiment of the present application also provides a resonator, including a substrate, a temperature compensation layer and a piezoelectric thin film sequentially disposed on the substrate. The resonator also includes interdigital transducers arranged on the surface of the piezoelectric film. The interdigital transducer includes: interdigital electrodes, a first bus bar, a second bus bar, a first additional bus bar, and a second additional bus bar. The interdigital electrodes include: a plurality of first interdigital electrodes and second interdigital electrodes arranged side by side and alternately along the first direction. The parallel arrangement direction of the first interdigital electrodes and the second interdigital electrodes is the first direction. Along the vertical first direction, the first bus bar and the second bus bar are distributed on both sides of the interdigital electrode; the first bus bar is connected to the end of the first interdigital electrode, and the second bus bar is connected to the second interdigital electrode. The ends of the electrodes are connected. The first additional bus bar is located in the area between the first bus bar and the second interdigital electrode; the first additional bus bar extends along the first direction, and the first additional bus bar is connected to the first interdigital electrode. The second additional bus bar is located in the area between the second bus bar and the first interdigital electrode; the second additional bus bar extends along the first direction, and the second additional bus bar is connected to the second interdigital electrode. A first dummy electrode is arranged between the second interdigital electrode and the first additional bus bar, and the first dummy electrode is connected to the first additional bus bar. A second dummy electrode is disposed between the first interdigital electrode and the second additional bus bar, and the second dummy electrode is connected to the second additional bus bar.

In this case, based on the setting of the first additional bus bar, the second additional bus bar, the first dummy electrode, and the second dummy electrode, it is possible to connect between the first bus bar and the first additional bus bar, and at the second An additional gap (gap) is formed between the second bus bar and the second additional bus bar, and the scattering of the acoustic surface wave can be suppressed through the gap area and the first dummy electrode and the second dummy electrode, reducing additional energy loss, Therefore, the energy confinement range of the reflective structure in the reflective grid region is improved, and the Q value of the resonator is improved.

An embodiment of the present application provides a filter, including the resonator provided in any one of the foregoing possible implementation manners.

An embodiment of the present application provides an electronic device, including a transceiver, a memory, and a processor; wherein, the transceiver includes the aforementioned filter.

Description of drawings

FIG. 1 is a schematic structural diagram of an electronic device provided in an embodiment of the present application;

FIG. 2 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

Fig. 3 is the schematic cross-sectional view of the resonator of Fig. 2 along AA ' position;

FIG. 4 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

FIG. 5 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

Fig. 6 is the schematic cross-sectional view of the resonator of Fig. 5 along BB' position;

FIG. 7 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

FIG. 8 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

FIG. 9 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

FIG. 10 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

FIG. 11 is a schematic structural diagram of a resonator provided in an embodiment of the present application;

FIG. 12 is a schematic structural diagram of a resonator provided in a related embodiment of the present application;

FIG. 13 is a schematic structural diagram of a resonator provided in a related embodiment of the present application;

FIG. 14 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

FIG. 15 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

FIG. 16 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

FIG. 17 is the Q curves of three resonators provided in the embodiment of the present application;

FIG. 18 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

FIG. 19 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

FIG. 20 is the Q curves of two resonators provided in the embodiment of the present application;

FIG. 21 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

Fig. 22 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

Figure 23 is the Q curves of two resonators provided in the embodiment of the present application;

Fig. 24 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

FIG. 25 is an admittance and conductance curve of a resonator provided in an embodiment of the present application;

FIG. 26 is the Q curves of two kinds of resonators provided by the embodiment of the present application.

Detailed ways

In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly described below in conjunction with the accompanying drawings in this application. Obviously, the described embodiments are part of the embodiments of this application, and Not all examples. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

The terms "first" and "second" in the description, embodiments, claims and drawings of the present application are only used for the purpose of distinguishing descriptions, and cannot be interpreted as indicating or implying relative importance, nor can they be interpreted as indicating or imply order. Words such as "connected" and "connected" are used to express intercommunication or interaction between different components, which may include direct connection or indirect connection through other components. Furthermore, the terms "comprising" and "having", as well as any variations thereof, are intended to cover a non-exclusive inclusion, for example, of a sequence of steps or elements. A method, system, product or device is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to the process, method, product or device. "Up", "Down", "Left", "Right", etc. are only used relative to the orientation of the components in the drawings. These directional terms are relative concepts, and they are used for description and clarification relative to , which may change accordingly according to changes in the orientation in which components are placed in the drawings.

It should be understood that in this application, "at least one (item)" means one or more, and "multiple" means two or more. "And/or" is used to describe the association relationship of associated objects, indicating that there can be three types of relationships, for example, "A and/or B" can mean: only A exists, only B exists, and A and B exist at the same time , where A and B can be singular or plural. The character "/" generally indicates that the contextual objects are an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one item (piece) of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c ", where a, b, c can be single or multiple.

An embodiment of the present application provides an electronic device, which is provided with a filter, and suppresses an interference signal through the filter to achieve a filtering effect.

Schematically, in some possible implementation manners, as shown in FIG. 1, the above-mentioned electronic device 01 may include a transceiver 1, a memory 2, and a processor 3 (which may be a local processor or a cloud processor); wherein, A filter 11 is arranged in the transceiver 1, and the filter 11 is constructed by using a resonator.

The present application does not limit the specific arrangement form of the above-mentioned electronic equipment, for example, the electronic equipment may be a TV set, a mobile phone, a satellite communication device, a cable TV, and the like.

In the resonator provided in the embodiment of the present application, by arranging double busbars (double busbar) in the interdigital transducer and/or the reflector, the energy confinement can be better improved, thereby expanding the ability of the resonator to suppress energy leakage. range, improving the quality factor of the resonator.

The following is an example of two different types of surface acoustic wave (SAW) resonators, such as TC SAW (temperature compensation surface acoustic wave, temperature compensation surface acoustic wave) resonator and I.H.P.SAW (incredible high performance surface acoustic wave) , very high-performance surface acoustic wave) resonator, the configuration of the resonator provided in the embodiment of the present application will be described.

Embodiment one

The present embodiment one provides a kind of TC SAW resonator, as shown in Fig. 2 and Fig. 3 (the sectional schematic diagram of Fig. 2 along AA ' position), comprise piezoelectric film 30 (also can be referred to as piezoelectric substrate) in this resonator S1 ), the upper surface of the piezoelectric film 30 is provided with an interdigital transducer 10 (interdigital transducer, IDT) and two reflectors 20; the two reflectors 20 are located on both sides of the interdigital transducer 10; The upper surfaces of the transducer 10 , the reflector 20 and the piezoelectric film 30 are covered with a temperature compensation layer 40 .

Schematically, the piezoelectric thin film 30 may be made of at least one of materials such as lithium niobate (LiNbO ₃ ), lithium tantalate (LiTaO ₃ ), but not limited thereto.

Schematically, the temperature compensation layer 40 may use at least one of silicon oxide (SiO ₂ ), silicon nitride (SiN) and other materials, but is not limited thereto.

As shown in FIG. 2 , the interdigital transducer 10 includes an interdigital electrode M, a first bus bar 101 (busbar), and a second bus bar 102 . Wherein, the interdigital electrodes M include: a plurality of first interdigital electrodes M1 and second interdigital electrodes M2 arranged side by side and alternately along the first direction XX'. In order to clearly describe the specific arrangement of the resonator, the parallel arrangement direction of the first interdigital electrode M1 and the second interdigital electrode M2 is defined as the first direction XX', and in the plane of the piezoelectric film 30, the first The vertical direction of the first direction XX' is defined as the second direction YY'.

2, along the second direction YY', the first bus bar 101 and the second bus bar 102 are distributed on both sides of the interdigital electrode M; the first bus bar 101 and the end of the first interdigital electrode M1 The second bus bar 102 is connected to the end of the second interdigital electrode M2.

During the working process of the resonator, using the inverse piezoelectric effect of the piezoelectric material in the piezoelectric film 30, the IDT 10 can convert the input electrical signal into acoustic vibration through the first interdigital electrode M1, and utilize the positive The piezoelectric effect converts the acoustic wave vibration back into an electrical signal through the second interdigitated electrode M2, thereby realizing acoustic-electric transduction.

Schematically, in some possible implementations, the interdigitated electrode M, the first bus bar 101, and the second bus bar 102 can be obtained by patterning (including exposure, development, etching, stripping, etc.) using the same metal film; The plurality of interdigitated electrodes M, the first bus bar 101 , and the second bus bar 102 may use one or more metal materials such as aluminum, gold, silver, copper, molybdenum, and tungsten, which are not limited in this application.

In addition, referring to FIG. 2 , the reflector 20 includes: a reflective grid N, a first grid bus bar 201 , a second grid bus bar 202 , a first additional grid bus bar a1 , and a second additional grid bus bar a2 . Wherein, the reflective grid N includes a first reflective grid N1 and a second reflective grid N2 arranged side by side and alternately along the first direction XX'. The first grid bus bar 201 and the second grid bus bar 202 are distributed on both sides of the reflective grid N along the second direction YY'. The first grid bus bar 201 is connected to the end of the first reflective grid N1, and the second grid bus bar 202 is connected to the end of the second reflective grid N2. The first additional grid bus bar a1 is located in the area between the first grid bus bar 201 and the second reflective grid N2, the first additional grid bus bar a1 extends along the first direction XX', and the first additional grid bus bar a1 is connected to the second reflective grid N2. The ends of the two reflective grids N2 and the first reflective grid N1 are all connected. The second additional grid bus bar a2 is located in the area between the second grid bus bar 202 and the first reflective grid N1; the second additional grid bus bar a2 extends along the first direction XX', and the second additional grid bus bar a2 is connected to the first reflective grid N1 The end of the first reflective grid N1 and the second reflective grid N2 are both connected.

It should be noted that the first additional grid bus bar a1 can be connected to all the first reflective grid N1 and the second reflective grid N2 in the reflector 20, or can be connected to some of the first reflective grid N1 and the second reflective grid in the reflector 20. The reflective grid N2 is connected. Similarly, the second additional grid bus bar a2 can be connected to all the first reflective grids N1 and the second reflective grids N2 in the reflector 20, or can be connected to some of the first reflective grids N1 and the second reflective grids in the reflector 20 N2 connection; the present application is not limited to this, and the embodiment of the present application is only illustrative, so that the first additional grid bus bar a1 and the second additional grid bus bar a2 are connected to all the first reflective grid N1 and the second reflective grid N2 connection as an example.

It should also be noted that, in some embodiments, the additional grid bus bars (a1, a2) may be located in different layers from the reflective grid N, that is, the additional grid bus bars (a1, a2) and the reflective grid N use different films Prepared by patterning; in some embodiments, the additional grid bus bars (a1, a2) can be integrated with the reflective grid N, that is, the additional grid bus bars (a1, a2) and the reflective grid N use the same thin film passing pattern chemically prepared; the present application does not limit this, and it can be set according to actual needs.

In addition, in some possible implementation manners, the width of the first additional grid bus bar a1 is smaller than the width of the first grid bus bar 201 ; the width of the second additional grid bus bar a2 is smaller than the width of the second grid bus bar 202 . Wherein, the width of the first additional gate bus bar a1 and the width of the second additional gate bus bar a2 may be the same or different. The width of the first grid bus bar 201 and the width of the second grid bus bar 202 may be the same or different; this application is not limited thereto. Schematically, in some embodiments, the width of the first additional grid bus bar a1 can be set to be the same as the width of the second additional grid bus bar a2, both of which are W1; the width of the first grid bus bar 201 is the same as that of the second grid bus bar The widths of 202 are the same, both are W2; wherein, W1<W2.

During the working process of the resonator, the surface acoustic wave generated by the interdigital transducer 10 is reflected by the reflecting structures 20 on both sides, so that the surface acoustic wave is confined between the two reflecting structures 20 to improve the performance of the resonator. Quality factor (ie Q factor, Q value).

Compared with the setting of the reflective structure 20 in the related art using a single bus bar, as shown in FIG. 2, the reflective structure 20 set in the embodiment of the present application adopts a double bus bar design. The additional grid bus bar a2 can form an additional gap G (gap) between the first additional grid bus bar a1 and the first grid bus bar 201, and between the second additional grid bus bar a2 and the second grid bus bar 202 , the scattering of acoustic surface waves can be suppressed through the gap region, reducing additional energy loss, thereby increasing the energy confinement range of the reflective structure 20 in the reflective grid region, thereby improving the Q value of the resonator.

Schematically, in some possible implementations, the reflective grid N, the first grid bus bar 201, the second grid bus bar 202, the first additional grid bus bar a1, and the second additional grid bus bar a2 can use the same metal film to pass through Obtained by patterning (including exposure, development, etching, stripping and other processes); reflective grid N, first grid bus bar 201, second grid bus bar 202, first additional grid bus bar a1, second additional grid bus bar a2 One or more of metal materials such as aluminum, gold, silver, copper, molybdenum, and tungsten can be used, which is not limited in the present application, and can be set according to actual needs.

Schematically, in some possible implementation manners, the interdigital transducer 10 and the reflectors 20 on both sides thereof can be obtained by patterning (including exposure, development, etching, stripping, etc.) using the same metal film.

In addition, in order to suppress the transverse wave (that is, the transverse mode) of the resonator, as shown in Figure 4, in some possible implementations, a piston suppression structure P can be provided at both ends of each interdigital electrode (M1, M2). (piston), the two ends of each reflective grating (N1, N2) are also provided with piston restraining structures P (piston).

Schematically, on the side of the interdigital transducer 10 close to the first bus bar 101, the piston on the second interdigital electrode M2 is located at its end, and is aligned with the piston on the first interdigital electrode M1; On the side of the transducer 10 close to the second bus bar 102 , the piston on the first interdigital electrode M1 is located at its end, and is aligned with the piston on the second interdigital electrode M2 . On the side of the reflector 20 close to the first grid bus bar 201, the pistons on each reflection grid (N1, N2) are located inside the first additional grid bus bar a1 (that is, the side away from the first grid bus bar 201 ), and connected to the first additional grid bus bar a1; on the side of the reflector 20 close to the second grid bus bar 202, the piston on each reflective grid (N1, N2) is located at the second additional grid bus bar a2 The inner side (that is, the side away from the second grid bus bar 202 ) is connected to the second additional grid bus bar a2 . Of course, the pistons located at both ends of the interdigital electrode M can be aligned with the pistons located at both ends of the reflective grid N, respectively.

It should be noted that, for the piston located at both ends of the interdigital electrode M, in some embodiments, the piston may be located on the surface of the interdigital electrode M (that is, the surface on the side away from the piezoelectric film), that is, the piston and the fork The finger electrode M is two independent structures; in some embodiments, the piston and the interdigital electrode M can be set as an integrated structure, the two are obtained by patterning the same film, and the width of the piston is set to be larger than the interdigital electrode connected to it width. Similarly, such as the arrangement of the pistons located at both ends of the reflective grid N.

Embodiment two

The second embodiment provides an I.H.P.SAW resonator, as shown in Figure 5 and Figure 6 (the schematic cross-sectional view along BB' in Figure 5), the resonator S2 includes a piezoelectric substrate T, and the piezoelectric substrate T includes a substrate The bottom 50, and the temperature compensation layer 40 and the piezoelectric film 30 arranged on the substrate 50 in sequence. The surface of the piezoelectric film 30 is provided with an IDT 10 and reflectors 20 respectively located on both sides of the IDT 10 .

Schematically, the aforementioned substrate 50 may be a silicon substrate, may also be a glass substrate, may also be a PI (polyimide, polyimide) substrate, etc., which is not limited in this application.

Schematically, the above-mentioned temperature compensation layer 40 may use at least one of silicon oxide (SiO ₂ ), silicon nitride (SiN) and other materials, but is not limited thereto.

Schematically, the piezoelectric thin film 30 may be at least one of lithium niobate (LiNbO ₃ ), lithium tantalate (LiTaO ₃ ) and other materials, but is not limited thereto.

As shown in FIG. 5 , in the first embodiment, the interdigital transducer 10 includes an interdigital electrode M, a first bus bar 101 , and a second bus bar 102 . Wherein, the interdigital electrodes M include: a plurality of first interdigital electrodes M1 and second interdigital electrodes M2 arranged side by side and alternately along the first direction XX'. The direction in which the first interdigital electrodes M1 and the second interdigital electrodes M2 are arranged side by side is defined as the first direction XX', and within the plane of the piezoelectric film 30, the vertical direction of the first direction XX' is defined as the second direction YY '.

5, along the second direction YY', the first bus bar 101 and the second bus bar 102 are distributed on both sides of the interdigitated electrode M; the first bus bar 101 and the end of the first interdigitated electrode M1 The second bus bar 102 is connected to the end of the second interdigital electrode M2.

During the working process of the resonator, using the inverse piezoelectric effect of the piezoelectric material in the piezoelectric film 30, the interdigital transducer 10 can convert the input electrical signal into acoustic vibration through the first interdigital electrode M1, and utilize the positive The piezoelectric effect converts the acoustic wave vibration back into an electrical signal through the second interdigitated electrode M2, thereby realizing acoustic-electric transduction.

In addition, referring to FIG. 5 , the reflector 20 includes: a reflective grid N, a first grid bus bar 201 , a second grid bus bar 202 , a first additional grid bus bar a1 , and a second additional grid bus bar a2 . Wherein, the reflection grid N includes a first reflection grid N1 and a second reflection grid N2 arranged side by side and alternately along the first direction. The first grid bus bar 201 and the second grid bus bar 202 are distributed on both sides of the reflective grid N along the second direction YY'; and the first grid bus bar 201 is connected to the end of the first reflective grid N1, and the second grid bus bar The bus bar 202 is connected to the end of the second reflective grid N2. The first additional gate bus bar a1 and the second additional gate bus bar a2 extend along the first direction XX'. The first additional grid bus bar a1 is located in the area between the first grid bus bar 201 and the second reflective grid N2, the first additional grid bus bar a1 is connected to the first reflective grid N1, and the first additional grid bus bar a1 is connected to the second reflective grid N2. A gap is left between the reflective grids N2. The second additional grid bus bar a2 is located in the area between the second grid bus bar 202 and the first reflective grid N1, the second additional grid bus bar a2 is connected to the second reflective grid N2, and the second additional grid bus bar a2 is connected to the first reflective grid N1. A gap is left between the reflective grids N1.

It should be noted that the first additional grid bus bar a1 can be connected to all the first reflective grids N1 in the reflector 20, and can also be connected to some of the first reflective grids N1; similarly, the second additional grid bus bar a2 can be connected to All of the second reflective grids N2 in the reflector 20 are connected, and may also be connected to some of the second reflective grids N2; the present application is not limited to this, and the embodiment of the present application is only illustrative. All the first reflection grids N1 in the reflector 20 are connected, and the second additional grid bus bar a2 is connected to all the second reflection grids N2 in the reflector 20 as an example for illustration.

Schematically, in some possible implementation manners, the width of the first additional grid bus bar a1 can be set to be smaller than the width of the first grid bus bar 201; the width of the second additional grid bus bar a2 is smaller than the width of the second grid bus bar 202 . Wherein, the width of the first additional gate bus bar a1 and the width of the second additional gate bus bar a2 may be the same or different. The width of the first grid bus bar 201 and the width of the second grid bus bar 202 may be the same or different; this application is not limited thereto.

Schematically, in some embodiments, the width of the first additional grid bus bar a1 can be set to be the same as that of the second additional grid bus bar a2, both of which are W3; the width of the first grid bus bar 201 is the same as that of the second grid bus bar The widths of 202 are the same, both are W4; wherein, W3<W4.

Compared with the setting of the reflective structure 20 in the related art using a single bus bar, as shown in FIG. The additional grid bus bar a2 can form an additional gap G (gap) between the first additional grid bus bar a1 and the first grid bus bar 201, and between the second additional grid bus bar a2 and the second grid bus bar 202 , the scattering of acoustic surface waves can be suppressed through the gap region, and additional energy loss can be reduced, thereby increasing the energy confinement range of the reflective structure 20 in the reflective grid region, and improving the Q value of the resonator.

On this basis, in order to further suppress the scattering of acoustic surface waves and reduce additional energy loss, the interdigital transducer 10 can also be set to use double busbars; as shown in Figure 7, in the interdigital transducer A first additional bus bar b1 and a second additional bus bar b2 extending along the first direction XX' are added to the energy device 10 . Wherein, the first additional bus bar b1 is located in the area between the first bus bar 101 and the second interdigital electrode M2, and the first additional bus bar b1 is connected to the first interdigital electrode M1, and the first additional bus bar b1 is connected to the second interdigital electrode M2. There is a gap between the two interdigitated electrodes M2. The second additional bus bar b2 is located in the area between the second bus bar 102 and the first interdigital electrode M1, and the second additional bus bar b2 is connected to the second interdigital electrode M2, and the second additional bus bar b2 is connected to the first interdigital electrode M1. There is a gap between the finger electrodes M1. In this case, an additional gap G (gap) can be formed between the first bus bar 101 and the first additional bus bar b1, and between the second bus bar 102 and the second additional bus bar b2 as a high sound velocity The energy confinement is performed in the reflective grid region to reduce additional energy loss, thereby increasing the energy confinement range of the reflective structure 20 in the reflective grid region and improving the Q value of the resonator.

It should be noted that the first additional bus bar b1 may be connected to all the first interdigital electrodes M1 in the IDT 10, or may be connected to only part of the first interdigital electrodes M1; similarly, the second additional bus bar b1 The bus bar b2 may be connected to all the second interdigital electrodes M2 in the IDT 10, or may be connected to only part of the second interdigital electrodes M2; the present application does not make specific limitations on this, and the embodiment of the present application is only Schematically, the first additional bus bar b1 is connected to all the first interdigital electrodes M1 in the IDT 10, and the second additional bus bar b2 is connected to all the second interdigital electrodes M2 in the IDT 10 As an example to illustrate.

Schematically, in some possible implementation manners, the width of the first additional bus bar b1 is smaller than the width of the first bus bar 101 ; the width of the second additional bus bar b2 is smaller than the width of the second bus bar 102 . Wherein, the width of the first bus bar 101 and the width of the second bus bar 102 may be the same or different. The width of the first additional bus bar b1 and the width of the second additional bus bar b2 may be the same or different; this application is not limited thereto.

Schematically, in some embodiments, it can be set that the width of the first additional bus bar b1 is the same as that of the second additional bus bar b2, both of which are W5; the width of the first bus bar 101 is the same as that of the second bus bar 102 , are all W6; where W5<W6.

In addition, as shown in FIG. 8 , in some possible implementation manners, a first dummy electrode c1 (dummy) and a second dummy electrode c2 can be set in the interdigital transducer 10, wherein the first dummy electrode c1 is disposed between the second interdigital electrode M2 and the first additional bus bar b1, and the first dummy electrode c1 is connected to the first additional bus bar b1. The second dummy electrode c2 is disposed between the first interdigital electrode M1 and the second additional bus bar b2 , and the second dummy electrode c2 is connected to the second additional bus bar b2 . In this case, energy scattering can be suppressed in the regions of the first dummy electrode c1 and the second dummy electrode c2, thereby reducing the leakage of shear waves toward the additional bus bars (b1, b2) and improving the suppression of shear waves.

Referring to FIG. 8 , in some possible implementation manners, a first dummy reflection grating d1 (dummy) and a second dummy reflection grating d2 may be set in the reflector 20 . The first dummy reflective grid d1 is disposed between the second reflective grid N2 and the first additional grid bus bar a2 , and the first dummy reflective grid d1 is connected to the first additional grid bus bar a1 . The second dummy reflective grid d2 is disposed between the first reflective grid N1 and the second additional grid bus bar a2 , and the second dummy reflective grid d2 is connected to the second additional grid bus bar a2 . In this case, energy scattering can be suppressed in the regions of the first dummy reflector d1 and the second dummy reflector d2, thereby reducing the leakage of the shear wave toward the additional bus bars (b1, b2) and improving the restraint of the shear wave.

It should be noted that in practice, the energy loss caused by scattering can be better suppressed by adjusting the design parameters of the first dummy electrode c1 (such as changing the shape, length, width, etc.). Schematically, the width of the first dummy electrode c1 may be greater than the width of the second interdigital electrode M2, or may be smaller than the width of the second interdigital electrode M2, or may be the same as the width of the second interdigital electrode M2. Applications are not limited to this. Similarly, such as setting the widths of the second dummy electrode c2, the first dummy reflection grid d1, and the second dummy reflection grid d2. Schematically, in some embodiments, the widths of the first dummy electrode c1 , the second dummy electrode c2 , the first dummy reflection grid d1 , and the second dummy reflection grid d2 may all be set to be the same.

In addition, in order to further suppress the transverse wave (that is, the transverse mode) of the resonator, as shown in FIG. Piston restraining structures P (piston) are also arranged at both ends of the reflective grid N, respectively.

Schematically, on the side of the interdigital ring energy device 10 close to the first bus bar 101, the piston on the second interdigital electrode M2 is located at its end, and is aligned with the piston on the first interdigital electrode M1; On the side of the device 10 close to the second bus bar 102, the piston on the first interdigital electrode M1 is located at its end, and is aligned with the piston on the second interdigital electrode M2. On the side of the reflector 20 close to the first grid bus bar 201, the piston on the second reflective grid N2 is located at its end, and is aligned with the piston on the first reflective grid N1; on the side of the reflector 20 close to the second grid bus bar On one side of 202, the piston on the first reflective grid N2 is located at its end, and is aligned with the piston on the second reflective grid N2. Of course, the pistons located at both ends of each interdigital electrode M and the pistons located at both ends of each reflective grid N can be aligned respectively.

By setting the reflector 20 and the IDT 10 to adopt the same structure (such as double bus bars, dummy, piston, etc.), the structural continuity between the IDT 10 and the reflector 20 can be realized, thereby It can effectively suppress the shear wave and the mode conversion and scattering phenomenon caused by the discontinuity of the structure near the reflection grid, reduce the energy loss, and improve the Q value of the resonator.

Schematically, in the second embodiment, the interdigital transducer 10 and the reflectors 20 on both sides thereof can be obtained by patterning (including exposure, development, etching, stripping, etc.) using the same metal thin film. But the present application is not limited thereto, for each component (such as interdigital electrode, bus bar, piston, etc.) in the IDT 10 and each component (such as reflection grid, grid bus bar, piston, etc.) For details, please refer to the corresponding description in Embodiment 1, which will not be repeated here.

Embodiment Three

The present embodiment three provides an I.H.P.SAW resonator, as shown in FIG. A double bus bar structure is set in the reflector 20, but the double bus bar structure may not be set in the reflector 20.

Referring to FIG. 10 , the interdigital transducer 10 includes an interdigital electrode M, a first bus bar 101 , a second bus bar 102 , a first additional bus bar b1 and a second additional bus bar b2.

The interdigital electrodes M include: a plurality of first interdigital electrodes M1 and second interdigital electrodes M2 arranged side by side and alternately along the first direction XX'. Along the second direction YY', the first bus bar 101 and the second bus bar 102 are distributed on both sides of the interdigital electrode M; the first bus bar 101 is connected to the end of the first interdigital electrode M1, and the second bus bar The strip 102 is connected to the end of the second interdigitated electrode M2.

The first additional bus bar b1 and the second additional bus bar b2 extend along the first direction XX'. The first additional bus bar b1 is located in the area between the first bus bar 101 and the second interdigital electrode M2 , and the first additional bus bar b1 is connected to the first interdigital electrode 101 . The second additional bus bar b2 is located in the area between the second bus bar 102 and the first interdigital electrode M1, and the second additional bus bar b2 is connected to the second interdigital electrode M2.

On this basis, as shown in FIG. 10 , the IDT 10 is further provided with a first dummy electrode c1 (dummy) and a second dummy electrode c2 . Wherein, the first dummy electrode c1 is disposed between the second interdigital electrode M2 and the first additional bus bar b1, and the first dummy electrode c1 is connected to the first additional bus bar b1. The second dummy electrode c2 is disposed between the first interdigital electrode M1 and the second additional bus bar b2 , and the second dummy electrode c2 is connected to the second additional bus bar b2 .

Based on the setting of the first additional bus bar b1, the second additional bus bar b2, the first dummy electrode c1, and the second dummy electrode c2, it is possible to connect between the first bus bar 101 and the first additional bus bar b1, and between An additional gap (gap) is formed between the second bus bar 102 and the second additional bus bar b2, and the scattering of the surface acoustic wave can be suppressed through the gap area and the first dummy electrode c1 and the second dummy electrode c2, reducing The additional energy loss increases the energy confinement range of the reflective structure 20 in the reflective grid region and increases the Q value of the resonator.

Of course, as shown in FIG. 11 , in some possible implementations, in the interdigital transducer 10, piston suppression structures (piston) can be respectively provided at both ends of the interdigital electrode M to further suppress the shear wave.

Schematically, on the side of the interdigital transducer 10 close to the first bus bar 101, the piston on the second interdigital electrode M2 is located at its end, and is aligned with the piston on the first interdigital electrode M1; On the side of the transducer 10 close to the second bus bar 102 , the piston on the first interdigital electrode M1 is located at its end, and is aligned with the piston on the second interdigital electrode M2 .

Regarding other settings of the resonator S3 in the third embodiment, such as the structure of the piezoelectric substrate, the relative widths of the first additional bus bar b1 and the second additional bus bar b2, etc., reference may be made to the aforementioned embodiment two; For the fabrication of components in the transducer 10 (such as interdigital electrodes, bus bars, and pistons), details may refer to the corresponding descriptions in Embodiment 1, which will not be repeated here.

The resonator provided in the embodiment of the present application will be further described below by comparing the simulations of three different resonators (resonator 1, resonator 2, and resonator 3).

Resonator 1: Taking the resonator shown in Figure 8 as an example, the first additional grid bus bar a1, the second additional grid bus bar a2, the first additional grid bus bar b1, the second Additional bus bar b2, first dummy electrode c1, second dummy electrode c2, first dummy reflective grating d1, second dummy reflective grating d2.

Resonator 2: Taking the resonator shown in FIG. 12 as an example, compared with resonator 1, this resonator 2 does not have the first additional grid bus bar a1, the second additional grid bus bar a2, and the first additional grid bus bar bar b1, the second additional bus bar b2, but retain the first dummy electrode c1, the second dummy electrode c2, the first dummy reflection grid d1, and the second dummy reflection grid d2.

Resonator three: taking the resonator shown in Figure 13 as an example, compared with resonator one, the first additional grid bus bar a1, the second additional grid bus bar a2, and the first additional grid bus bar b1 , the second additional bus bar b2 , the first dummy electrode c1 , the second dummy electrode c2 , the first dummy reflection grid d1 , and the second dummy reflection grid d2 are not provided.

Figure 14 is the simulated admittance |Y| and conductance G curves of the above-mentioned resonator one, Figure 15 is the simulated admittance |Y| Y| and conductance G curves. Comparing Figure 14, Figure 15, and Figure 16, it can be seen that the admittance and conductance curves of resonator 3 have obvious spurious peaks when they are higher than 1.925Ghz (refer to Figure 16), which is caused by the interdigitated electrodes and bus bars. It is caused by the scattering of the gap region (gap); resonator 2 introduces a dummy structure (c1, c2, c3, c4) on the basis of resonator 3, and the spurious peak above 1.925Ghz is suppressed, but this At this time, there is still an arc-shaped bulge before the anti-resonance point (fa) (as shown in area C in Figure 15), which indicates that there is an area of energy leakage before the anti-resonance point (fa). In contrast, as shown in Figure 14, the overall amplitude of the admittance and conductance curves of resonator 1 is lower before the antiresonance point (fa) (corresponding to the bulge position in Figure 14), that is, in resonator 1, by setting The double busbar structure (a1, a2, b1, b2) provides better energy confinement.

Among Fig. 17, L1 is the Bode (Bode) Q curve of the above-mentioned resonator one, L2 is the Bode Q curve of the resonator two, and L3 is the Bode Q curve of the above-mentioned resonator three. Referring to Figure 17, it can be seen that the Bode Q curve of resonator one has a higher Q in the frequency range of 1.925GHz to 1.965GHz. Of course, by setting the piston structure in practice, the Q value of the resonator can be further improved.

In addition, those skilled in the art can understand that the piezoelectric materials in the piezoelectric film 30 of the resonator, such as LiNbO ₃ (LN), LiTaO ₃ (LT), can have different cut angles; The design scheme of the double bus bar structure, for the resonators using piezoelectric materials with different cutting angles, can well improve the energy confinement and Q value. In combination with the aforementioned resonator one (that is, the double bus bar structure is set in FIG. 8 ) and the resonator two (that is, the double bus bar structure is not set in FIG. 12 ), by comparing the piezoelectric films 30 of the resonator one and the resonator two respectively Using the simulation results of 42°YX-LT, 20°YX-LT, and 20°YX-LN, the resonator in the embodiment of the present application will be further described.

Figure 18 is the admittance and conductance curve of resonator 1 using 42°YX-LT; Figure 19 is the admittance and conductance curve of resonator 2 using 42°YX-LT; L1 in Figure 20 is the Bode of resonator 1 Q curve, L2 is the Bode Q curve of resonator 2.

Comparing FIG. 18 and FIG. 19 , it can be seen that in the frequency range of 1.95 GHz to 1.98 GHz, the conductance (G) of resonator 1 is lower than that of resonator 2. It can be seen from Fig. 20 that the Q value of resonator one is higher than that of resonator two in the frequency range of 1.95GHz to 1.98GHz. That is to say, better energy confinement is provided by setting the double busbar structure.

Figure 21 is the admittance and conductance curve of resonator 1 using 20°YX-LT; Figure 22 is the admittance and conductance curve of resonator 2 using 20°YX-LT; L1 in Figure 23 is the Bode of resonator 1 Q curve, L2 is the Bode Q curve of resonator 2.

Comparing FIG. 21 and FIG. 22 , it can be seen that in the frequency range of 1.95 GHz to 1.98 GHz, the conductance (G) of resonator 1 is lower than that of resonator 2. It can be seen from FIG. 23 that the Q value of resonator 1 is higher than that of resonator 2 in the frequency range from 1.95 GHz to 1.98 GHz. That is to say, better energy confinement is provided by setting the double busbar structure.

Figure 24 is the admittance and conductance curve of resonator one using 20°YX-NT; Figure 25 is the admittance and conductance curve of resonator two using 20°YX-NT; L1 in Figure 26 is the Bode of resonator one Q curve, L2 is the Bode Q curve of resonator 2.

Comparing FIG. 24 and FIG. 25 , it can be seen that in the frequency range of 1.95 GHz to 1.98 GHz, the conductance (G) of the first resonator is lower than that of the second resonator. It can be seen from Fig. 26 that the Q value of resonator one is higher than that of resonator two in the frequency range of 1.95GHz to 1.98GHz. That is to say, better energy confinement is provided by setting the double busbar structure.

In addition, it can be understood that, by using the resonator provided by the embodiment of the present application, by setting a double bus bar structure and adding an additional gap region (G), the scattering of the acoustic surface wave can be suppressed, the additional energy loss can be reduced, and the resonator can be improved. The purpose of the Q value; in addition, since the scattering in the gap region is reduced, it becomes feasible to design and shorten the aperture (aperture), thereby reducing the ohmic loss and further improving the Q value of the resonator.

The above is only a specific implementation of the application, but the scope of protection of the application is not limited thereto. Anyone familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the application. Should be covered within the protection scope of this application. Therefore, the protection scope of the present application should be determined by the protection scope of the claims.

Claims

A resonator, characterized in that it comprises:

Piezoelectric substrate;

an interdigital transducer disposed on the piezoelectric substrate;

and two reflectors arranged on the piezoelectric substrate; the two reflectors are respectively located on both sides of the IDT;

The reflector includes a reflection grid, a first grid bus bar, a second grid bus bar, a first additional grid bus bar, and a second additional grid bus bar; the reflection grid includes a first reflection grid and a second grid bus bar arranged alternately in parallel. Reflective grating; the parallel arrangement direction of the first reflective grating and the second reflective grating is the first direction;

The first grid bus bar and the second grid bus bar are distributed on both sides of the reflective grid along the vertical direction; and the first grid bus bar and the end of the first reflective grid The second grid bus bar is connected to the end of the second reflective grid;

The first additional grid bus bar is located in the area between the first grid bus bar and the second reflective grid; the first additional grid bus bar extends along the first direction, and the first additional grid bus bar A grid bus bar is connected to the first reflective grid;

The second additional grid bus bar is located in the area between the second grid bus bar and the first reflective grid; the second additional grid bus bar extends along the first direction, and the second additional grid bus bar The grid bus bar is connected to the second reflective grid.
The resonator according to claim 1, characterized in that

The width of the first grid bus bar is greater than the width of the first additional grid bus bar;

The width of the second gate bus bar is greater than the width of the second additional gate bus bar.
A resonator according to claim 1 or 2, characterized in that

The piezoelectric substrate includes a piezoelectric film;

The interdigital transducer and the reflector are arranged on the surface of the piezoelectric film, and the surfaces of the interdigital transducer, the reflector and the piezoelectric film are covered with a temperature compensation layer.
A resonator according to claim 3, characterized in that

The end of the second reflective grid is connected to the first additional grid bus bar;

An end of the first reflective grid is connected to the second additional grid bus bar.
A resonator according to claim 3 or 4, characterized in that

The interdigital transducer includes: interdigital electrodes, a first bus bar, and a second bus bar;

The interdigital electrodes include: a plurality of first interdigital electrodes and second interdigital electrodes arranged side by side and alternately along the first direction;

In the direction perpendicular to the first direction, the first bus bar and the second bus bar are distributed on both sides of the interdigitated electrode; the ends of the first bus bar and the first interdigitated electrode The second bus bar is connected to the end of the second interdigital electrode.
A resonator according to claim 1 or 2, characterized in that

The piezoelectric substrate includes a substrate, and a temperature compensation layer and a piezoelectric film sequentially arranged on the substrate;

The interdigital transducer and the reflector are arranged on the surface of the piezoelectric film.
A resonator according to claim 6, characterized in that

The interdigital transducer includes: interdigital electrodes, a first bus bar, a second bus bar, a first additional bus bar, and a second additional bus bar;

The interdigital electrodes include: a plurality of first interdigital electrodes and second interdigital electrodes arranged side by side and alternately along the first direction;

In the direction perpendicular to the first direction, the first bus bar and the second bus bar are distributed on both sides of the interdigitated electrode; the ends of the first bus bar and the first interdigitated electrode part connection, the second bus bar is connected to the end of the second interdigital electrode;

The first additional bus bar is located in a region between the first bus bar and the second interdigital electrode; the first additional bus bar extends along the first direction, and the first additional bus bar connected to the first interdigital electrode;

The second additional bus bar is located in a region between the second bus bar and the first interdigital electrode; the first additional bus bar extends along the first direction, and the second additional bus bar connected to the second interdigitated electrode.
A resonator according to claim 7, characterized in that

The width of the first bus bar is greater than the width of the first additional bus bar;

The width of the second bus bar is greater than the width of the second additional bus bar.
The resonator according to any one of claims 6-8, characterized in that,

The interdigital transducer also includes a first dummy electrode and a second dummy electrode;

The first dummy electrode is disposed between the second interdigital electrode and the first additional bus bar, and the first dummy electrode is connected to the first additional bus bar;

The second dummy electrode is disposed between the first interdigital electrode and the second additional bus bar, and the second dummy electrode is connected to the second additional bus bar.
The resonator according to any one of claims 6-9, characterized in that,

The reflector also includes a first dummy reflection grid and a second dummy reflection grid;

The first dummy reflective grid is disposed between the second reflective grid and the first additional grid bus bar, and the first dummy reflective grid is connected to the first additional grid bus bar;

The second dummy reflective grid is disposed between the first reflective grid and the second additional grid bus bar, and the second dummy reflective grid is connected to the second additional grid bus bar.
The resonator according to any one of claims 5, 7-10, characterized in that,

The two ends of the interdigital electrode and the reflective grid are respectively provided with piston restraining structures (piston).
A resonator, characterized in that it includes a substrate, a temperature compensation layer and a piezoelectric film sequentially arranged on the substrate;

The resonator also includes an interdigital transducer disposed on the surface of the piezoelectric film;

The interdigital transducer includes: interdigital electrodes, a first bus bar, a second bus bar, a first additional bus bar, and a second additional bus bar;

The interdigital electrodes include: a plurality of first interdigital electrodes and second interdigital electrodes arranged alternately in parallel; the parallel arrangement direction of the first interdigital electrodes and the second interdigital electrodes is a first direction;

In the direction perpendicular to the first direction, the first bus bar and the second bus bar are distributed on both sides of the interdigitated electrode; the ends of the first bus bar and the first interdigitated electrode part connection, the second bus bar is connected to the end of the second interdigital electrode;

The first additional bus bar is located in a region between the first bus bar and the second interdigital electrode; the first additional bus bar extends along the first direction, and the first additional bus bar connected to the first interdigital electrode;

The second additional bus bar is located in a region between the second bus bar and the first interdigital electrode; the second additional bus bar extends along the first direction, and the second additional bus bar connected to the second interdigitated electrode;

A first dummy electrode is provided between the second interdigitated electrode and the first additional bus bar, and the first dummy electrode is connected to the first additional bus bar;

A second dummy electrode is disposed between the first interdigital electrode and the second additional bus bar, and the second dummy electrode is connected to the second additional bus bar.
A filter, characterized by comprising the resonator according to any one of claims 1-12.
An electronic device, characterized by comprising a transceiver, a memory and a processor; wherein the transceiver comprises the filter according to claim 13.