WO2023028060A1 - Commutateur à sécurité intégrée pour systèmes multidomaines - Google Patents

Commutateur à sécurité intégrée pour systèmes multidomaines Download PDF

Info

Publication number
WO2023028060A1
WO2023028060A1 PCT/US2022/041229 US2022041229W WO2023028060A1 WO 2023028060 A1 WO2023028060 A1 WO 2023028060A1 US 2022041229 W US2022041229 W US 2022041229W WO 2023028060 A1 WO2023028060 A1 WO 2023028060A1
Authority
WO
WIPO (PCT)
Prior art keywords
pfet
voltage
signal
coupled
circuit
Prior art date
Application number
PCT/US2022/041229
Other languages
English (en)
Inventor
Divya Kaur
Muthusubramanian N. VENKATESWARAN
Vinod Menezes
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/733,714 external-priority patent/US11863180B2/en
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Publication of WO2023028060A1 publication Critical patent/WO2023028060A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/124—Sampling or signal conditioning arrangements specially adapted for A/D converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

Definitions

  • This description relates generally to anal og-to-digi tai converters (ADCs), and more particularly to a fail-safe switch in a high-speed ADC.
  • ADCs anal og-to-digi tai converters
  • ADC analog to digital converter
  • Many systems such as telemetry systems, controllers, automobiles, environmental sensing applications and medical applications
  • ADC analog to digital converter
  • the conversion process includes periodically sampling the analog signal and converting each sampled signal to a corresponding digital signal.
  • Multiple applications specify the ADCs to sample at high data rates, operate at low power, and provide high resolution.
  • the high-speed ADCs have switches that likewise operate at high-speed with low impedance. Those objectives may conflict with one another.
  • many of those systems are battery powered, portable or remote devices, so power consumption is a concern. Accordingly, relatively low quiescent current is often specified for the switches.
  • a circuit includes a switch.
  • the switch includes first transistors and second transistors.
  • a voltage generation circuit is coupled to the switch.
  • a level shifter is coupled to the voltage generation circuit and is configured to receive a control signal.
  • a logic unit is coupled to the level shifter and the voltage generation circuit. The logic unit is configured to generate a secondary signal.
  • the first transistors are configured to receive the control signal, and the second transistors are configured to receive the secondary signal.
  • FIG. 1 is a schematic of an example circuit.
  • FIG. 2 is a schematic of an example voltage generation circuit.
  • FIG. 3 is an example timing diagram of operation of the circuit of FIG. 1.
  • FIG. 4 is an example waveform diagram of operation of the circuit of FIG. 1.
  • FIG. 5 is a flowchart of an example method of operation of a circuit.
  • FIG. 6 is a block diagram of an example device.
  • FIG. 7 is a block diagram of an example device. DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS
  • FIG. 1 is a schematic of aa example circuit 100.
  • the circuit includes a switch 104, a voltage generation circuit 120, a level shifter 130 and a logic unit 140.
  • the voltage generation circuit 120 is coupled to the switch 104.
  • the level shifter 130 is coupled to voltage generation circuit 120.
  • the logic unit 140 is coupled to the voltage generation circuit 120, the level shifter 130 and the switch 104.
  • the switch 104 includes first transistors and second transistors.
  • the first transistors include one or more n-channel field effect transistors (NFETs), and the second transistors include one or more p-channel field effect transistors (PFETs).
  • the first transistors include a first NFET Q0 112, and the second transistors include a first PFET QI 114 and a second PFET Q2 116.
  • a drain terminal of the first NFET Q0 112 (a) is coupled to a source terminal of the first PFET QI 114; and (b) receives an input signal Vin 108.
  • a gate terminal of the first NFET Q0 112 receives a control signal CNTRL 106.
  • a bulk terminal of the first NFET Q0 112, in one example, is coupled to a supply voltage Vdd 124. In another example, the bulk terminal is coupled to one of the source, drain or gate terminal of the first NFET Q0 112 based on requirement of the circuit 100.
  • the source terminal of the first PFET QI 114 receives the input signal Vin 108, and a gate terminal of the first PFET QI 114 is coupled to the logic unit 140.
  • a drain terminal of the first PFET QI 114 is coupled to a drain terminal of the second PFET Q2 116 at a first node N1 118.
  • a gate terminal of the second PFET Q2 116 is coupled to the logic unit 140, and a source terminal of the second PFET Q2 116 is coupled to a source terminal of the first NFET Q0 112.
  • the voltage generation circuit 120 is coupled to the second transistors in the switch 104.
  • the voltage generation circuit 120 includes a diode DI 126 and a third PFET Q3 128.
  • the diode DI 126 receives the supply voltage Vdd 124 and is coupled to the level shifter 130 and the logic unit 140.
  • the third PFET Q3 128 is coupled to the second transistors in the switch 104. Both the diode DI 126 and the third PFET Q3 128 are coupled to the level shifter 130 and the logic unit 140 at a third node N3 122.
  • a source terminal of the third PFET Q3 128 is coupled to drain terminals of the first PFET QI 114 and the second PFET Q2 116.
  • a gate terminal of the third PFET Q3 128 receives the control signal CNTRL 106.
  • a drain terminal of the third PFET Q3 128 is coupled to the level shifter 130 and the logic unit 140.
  • the logic unit 140 includes a primary PFET Q4 134 and a secondary NFET Q5 136.
  • the primary PFET Q4 134 and the secondary NFET Q5 136 are coupled to the level shifter 130 and the switch 104.
  • a source terminal of the primary PFET Q4 134 is coupled to both the diode DI 126 and the third PFET Q3 128 in the voltage generation circuit 120.
  • a gate terminal of the primary PFET Q4 134 is coupled to the level shifter 130.
  • a drain terminal of the primary PFET Q4 134 is coupled to a drain terminal of the secondary NFET Q5 136 at a second node N2 132.
  • the drain terminals of the primary PFET Q4 134 and the secondary NFET Q5 136 are coupled to the gate terminals of the first PFET QI 114 and the second PFET Q2 116.
  • a gate terminal of the secondary NFET Q5 136 is coupled to the level shifter 130, and a source terminal of the secondary NFET Q5 136 is coupled to a ground terminal.
  • the circuit 100 may include one or more components that are not described herein for brevity. Each component of the circuit 100 may also be coupled to other components or blocks in FIG. 1, but those connections are not described herein for brevity. Also, each block or component of FIG. 1 may be coupled to components of a system using the circuit 100, which are also not shown in FIG. 1 for brevity.
  • the switch 104 receives the input signal Vin 108 and generates an output signal Vout 110.
  • the voltage generation circuit 120 receives the supply voltage Vdd 124, the control signal CNTRL 106, and a voltage at the first node N1 118.
  • the voltage generation circuit 120 generates a first signal at the third node N3 122.
  • the level shifter 130 and the logic unit 140 receive the first signal from the voltage generation circuit 120.
  • the level shifter 130 (a) receives the first signal and the control signal CNTRL 106; and (b) generates a primary signal.
  • the primary signal in one version, is a level shifted version of the control signal CNTRL 106.
  • the logic unit 140 receives the first signal from the voltage generation circuit 120 and the primary signal from the level shifter 130.
  • the logic unit 140 generates a secondary signal, which is provided to the second node N2 132.
  • the gate terminals of the first PFET QI 114 and the second PFET Q2 116 receive the secondary signal.
  • the voltage generation circuit 120 operates as a multiplexer that provides a maximum one of a first voltage or a second voltage (i.e., whichever one is higher).
  • the first voltage is (or is proportional to) the voltage at the first node N1 118
  • the second voltage is (or is proportional to) a difference between a threshold voltage of the diode DI 126 and the supply voltage Vdd 124.
  • the threshold voltage is proportional to a voltage drop across the diode DI 126.
  • the functionality of the diode DI 126 can be implemented using one or more of, or a combination of, diode, PN junction diode, Schottky diode, Zener diode and transistors, which ensure unidirectional flow of current from the supply voltage Vdd 124 towards the third node N3 122.
  • the voltage generation circuit 120 provides a maximum one of the first or second voltages (i.e., whichever one is higher) as the first signal at the third node N3 122. In one version, the voltage at the third node N3 122 keep the level shifter 130 operational.
  • the combination of the diode DI 126 and the third PFET Q3 128 is one way of implementing voltage generation circuit 120, and the voltage generation circuit 120 may be implemented with hardware elements (and/or operations in a different order) in configurations different than those described herein.
  • the control signal CNTRL 106 has a logic low state (logic ‘0’)
  • the first NFET Q0 112 has OFF state (i.e., is switched OFF, or is OPENED, to stop conducting current)
  • the third PFET Q3 128 has ON state (i.e., is switched ON, or is CLOSED, to conduct current).
  • the voltage at the third node N3 122 is equal to the first voltage (i.e., the voltage at the first node N1 118).
  • the primary signal generated by the level shifter 130 results in switching ON the primary PFET Q4 134 and switching OFF the secondary NFET Q5 136.
  • a voltage at the second node N2 132 is equal to the voltage at the third node N3 122. This results in switching OFF of the second PFET Q2 116.
  • the switch 104 stops generating the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic low state.
  • the control signal CNTRL 106 When the control signal CNTRL 106 has a logic high state (logic ‘ 1 ’), the first NFET Q0 112 has ON state. When the control signal CNTRL 106 has a logic high state and is greater than the voltage at the first node N1 118, the third PFET Q3 128 has OFF state. When the control signal CNTRL 106 has a logic high state and is less than the voltage at the first node N1 118, the third PFET Q3 128 has ON state.
  • the voltage at the third node N3 122 is a maximum one of the first voltage or the second voltage (i.e., whichever one is higher).
  • the primary signal generated by the level shifter 130 results in switching OFF the primary PFET Q4 134 and switching ON the secondary NFET Q5 136.
  • the second node N2 132 is coupled to the ground terminal through the secondary NFET Q5 136. This results in switching ON of the first PFET QI 114 and the second PFET Q2 116.
  • the switch 104 generates the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic high state.
  • circuit 100 provides the switch 104 that operates at high-speed and has low impedance when the output signal Vout 110 is generated.
  • the switch 104 is useful in applications requiring high-speed ADCs.
  • the control signal CNTRL 106 has a logic low state (logic ‘0’)
  • the circuit 100 enables failsafe operation even when the input signal Vin 108 is higher than the supply voltage Vdd 124 or even when the input signal Vin 108 is as low as 0 volt.
  • the circuit 100 provides for complete switching OFF of the second PFET Q2 116, so output signal Vout 110 is not generated.
  • the circuit 100 solves the failsafe issue without drawing static current either from the supply voltage Vdd 124 or from the input signal Vin 108. This enables the switch 104 to operate as a high-speed switch with no quiescent current.
  • the voltage generation circuit 120 ensures that a maximum one of the first voltage or the second voltage (i.e., whichever one is higher) is provided to the level shifter 130, which drives the first PFET QI 114 and the second PFET Q2 116.
  • the switches are implemented using multiple resistors and capacitors which results in large RC time constants, and hence cannot operate as high-speed switches.
  • the switch 104 in the circuit 100 operate as a high-speed switch because no resistors and capacitors are used, and also the transistors present in switch 104 undergo a fast transition when there is a change in state of control signal CNTRL 106. In some other circuits, the switch is implemented using an ideal diode.
  • the ideal diode is implemented using an NFET pass-gate ideal diode and/or a PFET pass-gate ideal diode.
  • an ideal diode requires a high voltage charge pump which increases the power consumption of the circuit.
  • the diode DI 126 in circuit 100 is not required to be an ideal diode, and accordingly the circuit 100 may consume less power than some circuits.
  • the combination of the voltage generation circuit 120, the level shifter 130 and the logic unit 140 act as a zero quiescent current gate driver for the first PFET QI 114 and the second PFET Q2 116.
  • the voltage generation circuit 120 provides for automatic switching between the first voltage and the second voltage. Thus, circuit 100 does not require a separate digital switch to switch between the supply voltage Vdd 124 or the voltage at the first node N1 118. Another advantage of voltage generation circuit 120 is that the circuit 100 does not require a sub-regulator to generate a maximum one of the first voltage or the second voltage (i.e., whichever one is higher). The voltage generation circuit 120 provides a smooth switchover between the first voltage and the second voltage without having blips in the output signal Vout 110. All these features enable the circuit 100 to be used as a failsafe switch operable at high frequencies in multi-domain systems.
  • FIG. 2 is a schematic of an example voltage generation circuit 200.
  • the voltage generation circuit 200 is another implementation of the voltage generation circuit 120 of FIG. 1.
  • the voltage generation circuit 200 includes a fourth PFET Q4 212, a fifth PFET Q5 214 and a sixth PFET Q6218.
  • the fourth PFET Q4 212 receives a supply voltage Vdd 202.
  • the fifth PFET Q5 214 is coupled to the fourth PFET Q4 212.
  • the sixth PFET Q6 218 is coupled to the fifth PFET Q5 214.
  • a source terminal of the fourth PFET Q4 212 receives the supply voltage Vdd 202.
  • a drain terminal of the fourth PFET Q4 212 is coupled to a source terminal of the fifth PFET Q5 214.
  • a gate terminal of the fourth PFET Q4 212 is coupled to a gate terminal of the fifth PFET Q5 214 and also to a third node N3 222.
  • a source terminal of the sixth PFET Q6 218 is coupled to second transistors in a switch (similar to the second transistors in the switch 104 in FIG. 1).
  • the source terminal of the sixth PFET Q6 218 (similar to the third PFET Q3 128 in FIG. 1) is coupled to the second transistors in the switch (such as switch 104 of FIG. 1).
  • the source terminal of the sixth PFET Q6 218 receives a voltage VN1 204.
  • the voltage VN1 204 is generated at a first node (similar to the first node N1 118 of FIG. 1).
  • the first node N1 similar to the first node N1 118 is formed by coupling a drain terminal of a first PFET and a source terminal of a second PFET, the first PFET and the second PFET are part of the second transistors.
  • a gate terminal of the sixth PFET Q6 218 receives a control signal CNTRL 224.
  • the control signal CNTRL 224 is similar to the control signal CNTRL 106 of FIG. 1.
  • a drain terminal of the sixth PFET Q6 218 is coupled to the third node N3 222.
  • the third node N3 122 is coupled to the level shifter 130 and the logic unit 140.
  • the third node N3 222 is coupled to a level shifter and a logic unit, which are not shown for brevity.
  • the gate terminal of the fourth PFET Q4 212, the gate terminal of the fifth PFET Q5 214 and the drain terminal of the sixth PFET Q6218 are all coupled to the level shifter (similar to the level shifter 130 of FIG. 1).
  • the voltage generation circuit 200 receives the supply voltage Vdd 124, the control signal CNTRL 224 and the voltage VN1 204, which is generated at the first node N1 (similar to the first node N1 118 in FIG. 1).
  • the voltage generation circuit 120 generates a first signal VI 230.
  • the first signal VI 230 is generated at the third node N3 222.
  • the level shifter and the logic unit receives the first signal VI 230 from the voltage generation circuit 120.
  • the voltage generation circuit 200 operates as a multiplexer that provides a maximum one of the voltage VN1 204 or the second voltage (i.e., whichever one is higher).
  • the second voltage is (or is proportional to) a difference between the supply voltage Vdd 202 and a threshold voltage of the fourth PFET Q4212 (and of the fifth PFET Q5 214).
  • the voltage generation circuit 200 provides a maximum one of the voltage VN1 204 or the second voltage (i.e., whichever one is higher) at the third node N3 222. In one version, the voltage at the third node N3 222 keep the level shifter operational.
  • the combination of the fourth PFET Q4212, the fifth PFET Q5 214 and the sixth PFET Q6 218 is one way of implemented voltage generation circuit 200, and the voltage generation circuit 200 may be implemented with hardware elements (and/or operations in a different order) in configurations different than those described herein.
  • the sixth PFET Q6 218 has ON state.
  • the voltage at the third node N3 222 is equal to the voltage VN1 204 (i.e., the voltage at the first node Nl, such as the first node N1 118 of FIG. 1).
  • the voltage at the third node N3 222 is a maximum one of the first voltage or the second voltage (i.e., whichever one is higher).
  • the control signal CNTRL 224 has a logic high state and is greater than VN1 204, the sixth PFET Q6 218 has OFF state.
  • the control signal CNTRL 224 has a logic high state and is less than VN1 204, the sixth PFET Q6 218 has ON state.
  • the voltage generation circuit 200 ensures that a maximum one of the voltage VN1 204 or the second voltage (i.e., whichever one is higher) is provided to the level shifter, which drives the second transistors (such as the first PFET QI 114 and the second PFET Q2 116 in FIG. 1) in the switch. This enables the switch to turn ON and OFF at high-speed.
  • the voltage generation circuit 200 provides for automatic switching between the voltage VN1 204 and the second voltage.
  • circuit 100 does not require a separate digital switch to switch between the supply voltage Vdd 124 or the voltage VN 1 204.
  • Another advantage of voltage generation circuit 200 is that a sub-regulator is not required to generate a maximum one of the voltage VN1 204 or the second voltage (i.e., whichever one is higher).
  • the voltage generation circuit 200 provides a smooth switchover between the voltage VN1 204 and the second voltage. For example, when the voltage generation circuit 200 is used in a CMOS switch, it enables the switch to be used as a failsafe switch operable at high frequencies in multi-domain systems.
  • FIG. 3 is an example timing diagram of operation of the circuit of FIG. 1.
  • the timing diagram is described in connection with the circuit 100 of FIG. 1.
  • the timing diagram shows the supply voltage Vdd 124, the input signal Vin 108, the output signal Vout 110, the control signal CNTRL 106, the first voltage VN1 at the first node N1 118, and a voltage VN2 at the second node N2 132.
  • the supply voltage Vdd 124 and the input signal Vin 108 are fixed at constant voltage values.
  • the control signal CNTRL 106 has a logic low state (logic ‘0’)
  • the first NFET Q0 112 has OFF state
  • the third PFET Q3 128 has ON state.
  • the voltage at the third node N3 122 is equal to the first voltage VN1 (i.e., the voltage at the first node N1 118).
  • the primary signal generated by the level shifter 130 results in switching ON the primary PFET Q4 134 and switching OFF the secondary NFET Q5 136.
  • the switch 104 stops generating the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic low state.
  • the control signal CNTRL 106 When the control signal CNTRL 106 has a logic high state (logic ‘ 1 ’), the first NFET Q0 112 has ON state. When the control signal CNTRL 106 has a logic high state and is greater than the voltage at the first node N1 118, the third PFET Q3 128 has OFF state. When the control signal CNTRL 106 has a logic high state and is less than the voltage at the first node N1 118, the third PFET Q3 128 has ON state.
  • the voltage at the third node N3 122 is a maximum one of the first voltage of the second voltage (i.e., whichever one is higher).
  • the primary signal generated by the level shifter 130 results in switching OFF the primary PFET Q4 134 and switching ON the secondary NFET Q5 136.
  • the second node N2 132 is coupled to the ground terminal through the secondary NFET Q5 136.
  • the voltage VN2 at the second node N2 132 has a logic low state.
  • the switch 104 generates the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic high state.
  • circuit 100 provides a switch 104 that operates at high-speed and has low impedance when the output signal Vout 110 is generated.
  • the switch 104 is useful in applications requiring high-speed ADCs.
  • the control signal CNTRL 106 has a logic low state (logic ‘0’)
  • the circuit 100 enables failsafe operation even when the input signal Vin 108 is higher than the supply voltage Vdd 124 or even when the input signal Vin 108 is as low as 0 volt.
  • the circuit 100 provides for complete switching OFF of the second PFET Q2 116, so output signal Vout 110 is not generated.
  • the circuit 100 solves the failsafe issue without drawing static current either from the supply voltage Vdd 124 or from the input signal Vin 108. This enables the switch 104 to operate as a high-speed switch with no quiescent current.
  • FIG. 4 is an example waveform diagram of operation of the circuit of FIG. 1.
  • the waveform diagram is described in connection with the circuit 100 of FIG. 1.
  • the waveform diagram shows the supply voltage Vdd 124, the input signal Vin 108, the output signal Vout 110, the first voltage VN1 at the first node N1 118, a voltage VN2 at the second node N2 132, and a voltage VN3 at the third node N3 122.
  • the waveform diagram also shows an output signal VoutC 402 in an example circuit.
  • the supply voltage Vdd 124 is fixed at constant voltage value while the input signal Vin 108 is linearly increasing.
  • the control signal CNTRL 106 has a logic low state (logic ‘0’)
  • the first NFET Q0 112 has OFF state
  • the third PFET Q 3 106 has ON state.
  • a voltage at the third node N3 122 is VN3.
  • the input signal Vin 108 is linearly increasing.
  • the voltage VN1 at the first node N1 118 remains constant when the input signal Vin 108 is less than a threshold voltage of the first PFET QI 114.
  • the voltage VN1 at the first node N1 118 follows the input signal Vin 108.
  • the voltage VN3 at the third node N3 122 remains constant when the voltage VN 1 at the first node N1 118 is less than a threshold voltage of the third PFET Q3 128.
  • the voltage VN1 at the first node N1 118 is greater than the threshold voltage of the third PFET Q3 128, the voltage VN3 at the third node N3 122 follows the voltage VN 1 at the first node N1 118.
  • the voltage VN3 at the third node N3 122 is equal to the first voltage VN1 (i.e., the voltage at the first node Nl 118).
  • the primary signal generated by the level shifter 130 results in switching ON the primary PFET Q4 134 and switching OFF the secondary NFET Q5 136.
  • the voltage VN2 at the second node N2 132 follows the voltage at the third node N3 122.
  • the voltage VN2 is equal to the first voltage VN1.
  • the switch 104 stops generating the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic low state.
  • a switch used in the circuit 100 is not completely switched OFF which results in generation of the output signal VoutC 402 responsive to the input signal Vin 108.
  • some circuits do not provide a reliable switch that is completely turned OFF when the control signal CNTRL 106 has a logic low state and the input signal Vin 108 is higher than the supply voltage Vdd 124.
  • the switch 104 of circuit 100 provides for complete switching OFF of the second PFET Q2 116. The circuit 100 ensure complete switching OFF of the second PFET Q2 116 even when the input signal Vin 108 is as low as 0 volt or the input signal Vin 108 is higher than the supply voltage Vdd 124.
  • circuit 100 provides the switch 104 that operates at high-speed and has low impedance when the output signal Vout 110 is generated.
  • the switch 104 is useful in multi-domain applications requiring high-speed ADCs.
  • FIG. 5 is a flowchart 500 of an example method of operation of a circuit.
  • the flowchart 500 is described in connection with the circuit 100 of FIG. 1.
  • the flowchart starts at step 502 and ends at step 508.
  • a control signal is provided to first transistors in a switch.
  • the switch 104 includes first transistors and second transistors.
  • the first transistors include a first NFET Q0 112, and a gate terminal of the first NFET Q0 112 receives the control signal CNTRL 106.
  • a secondary signal is provided to second transistors in the switch.
  • the second transistors include a first PFET.
  • the second transistors include a first PFET QI 114 and a second PFET Q2 116.
  • the gate terminals of the first PFET QI 114 and the second PFET Q2 116 receive the secondary signal.
  • an output signal is generated by the switch responsive to an input signal when the control signal has a logic high state.
  • the switch 104 generates the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic high state.
  • the first transistors and the second transistors in the switch are inactivated (i.e., switched OFF) when the control signal has a logic low state and the secondary signal is proportional to a voltage at a drain terminal of the first PFET.
  • the first transistors which include the first NFET Q0 112
  • the second transistors which include the first PFET QI 114 and the second PFET Q2 116) have OFF state.
  • the secondary signal generated by the logic unit 140 is proportional to a voltage at a drain terminal of the first PFET QI 114.
  • a first signal is generated responsive to a supply voltage and the control signal.
  • the circuit 100 includes a voltage generation circuit 120.
  • the voltage generation circuit 120 includes a diode DI 126 and a third PFET Q3 128.
  • the diode DI 126 receives the supply voltage Vdd 124.
  • the third PFET Q3 128 is coupled to the second transistors in the switch 104. Both the diode DI 126 and the third PFET Q3 128 are coupled to the level shifter 130 and the logic unit 140 at a third node N3 122.
  • a source terminal of the third PFET Q3 128 is coupled to drain terminals of the first PFET QI 114 and the second PFET Q2 116 at a first node N1 118.
  • a gate terminal of the third PFET Q3 128 receives the control signal CNTRL 106.
  • a drain terminal of the third PFET Q3 128 is coupled to the level shifter 130 and the logic unit 140.
  • the voltage generation circuit 120 receives the supply voltage Vdd 124, the control signal CNTRL 106 and a voltage at the first node N1 118.
  • the voltage generation circuit 120 generates the first signal.
  • the first signal is generated at the third node N3 122.
  • the voltage generation circuit 120 operates as a multiplexer that provides a maximum one of a first voltage or a second voltage (i.e., whichever one is higher).
  • the first voltage is (or is proportional to) the voltage at the first node N1 118
  • the second voltage is (or is proportional to) a difference between a threshold voltage of the diode DI 126 and the supply voltage Vdd 124.
  • the threshold voltage is proportional to a voltage drop across the diode DI 126.
  • the functionality of the diode DI 126 can be implemented using one or more of, or a combination of, diode, PN junction diode, Schottky diode, Zener diode and transistors, which ensure unidirectional flow of current from the supply voltage Vdd 124 towards the third node N3 122.
  • the voltage generation circuit 120 provides a maximum one of the first or second voltages (i.e., whichever one is higher) as the first signal at the third node N3 122.
  • a primary signal is generated responsive to the control signal and the first signal.
  • the circuit 100 includes a level shifter 130.
  • the level shifter 130 is coupled to voltage generation circuit 120.
  • the level shifter 130 receives the first signal (from the voltage generation circuit 120) and the control signal CNTRL 106, and generates a primary signal.
  • the secondary signal is generated responsive to the first signal and the primary signal.
  • the circuit 100 includes a logic unit 140.
  • the logic unit 140 includes a primary PFET Q4 134 and a secondary NFET Q5 136.
  • the primary PFET Q4 134 and the secondary NFET Q5 136 are coupled to the level shifter 130 and the switch 104.
  • a source terminal of the primary PFET Q4 134 is coupled to both the diode DI 126 and the third PFET Q3 128 in the voltage generation circuit 120.
  • a gate terminal of the primary PFET Q4 134 is coupled to the level shifter 130.
  • a drain terminal of the primary PFET Q4 134 is coupled to a drain terminal of the secondary NFET Q5 136 at a second node N2 132.
  • the drain terminals of the primary PFET Q4 134 and the secondary NFET Q5 136 are coupled to the gate terminals of the first PFET QI 114 and the second PFET Q2 116.
  • a gate terminal of the secondary NFET Q5 136 is coupled to the level shifter 130, and a source terminal of the secondary NFET Q5 136 is coupled to a ground terminal.
  • the logic unit 140 receives the first signal from the voltage generation circuit 120 and the primary signal from the level shifter 130.
  • the logic unit 140 generates a secondary signal, which is provided to the second node N2 132.
  • the gate terminals of the first PFET QI 114 and the second PFET Q2 116 receive the secondary signal.
  • the switch 104 in the circuit 100 generates the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic high state.
  • the control signal CNTRL 106 has a logic high state (logic ‘ 1’)
  • the first NFET Q0 112 is activated (i.e., switched ON).
  • the secondary NFET Q5 136, the first PFET QI 114 and the second PFET Q2 116 are activated.
  • the primary PFET Q4 134 is inactivated.
  • the first signal is equal to a maximum one of the first voltage or the second voltage (i.e., whichever one is higher).
  • the switch 104 in the circuit 100 stops generating the output signal Vout 110 responsive to the input signal Vin 108 when the control signal CNTRL 106 has a logic low state.
  • the control signal CNTRL 106 has a logic low state (logic ‘0’)
  • the first NFET Q0 112 is inactivated, and the third PFET Q3 128 is activated.
  • the secondary NFET Q5 136, and the second PFET Q2 116 are inactivated.
  • the primary PFET Q4 134 is activated.
  • the first signal is equal to the first voltage.
  • FIG. 6 is a block diagram of an example device 600.
  • the device 600 is, or in incorporated into or is part of, a server farm, a vehicle, a communication device, a transceiver, a personal computer, a gaming platform, a computing device, any other type of electronic system, or a portable device such as a battery powered handheld measurement device.
  • the device 600 may include one or more components that are not described herein for brevity.
  • the device 600 includes a voltage reference circuit 602, a circuit 604 and an analog to digital converter (ADC) 606.
  • the voltage reference circuit 602 provides an input signal Vin 612.
  • the circuit 604 receives the input signal Vin 612 and generates an output signal Vout 614.
  • the circuit 604 is similar, in connection and operation, to the circuit 100 of FIG. 1.
  • the ADC 606 converts the output signal Vout 614 to a digital signal Dout 620.
  • the circuit 604 includes a switch, a voltage generation circuit, a level shifter and a logic unit.
  • the voltage generation circuit is coupled to the switch.
  • the level shifter is coupled to voltage generation circuit.
  • the logic unit is coupled to the voltage generation circuit, the level shifter and the switch.
  • the switch includes first transistors and second transistors.
  • the first transistors include one or more NFETs, and the second transistors include one or more PFETs.
  • the first transistors and the level shifter receive a control signal.
  • the logic unit generates a secondary signal.
  • the second transistors in the switch receive the secondary signal.
  • the first transistors include a first NFET, and a gate terminal of the first NFET receives the control signal.
  • the second transistors include a first PFET and a second PFET. The gate terminals of the first PFET and the second PFET receive a secondary signal.
  • the voltage generation circuit includes a diode and a third PFET.
  • a source terminal of the third PFET is coupled to drain terminals of the first PFET and the second PFET at a first node Nl. Both the diode and the third PFET are coupled to the level shifter and the logic unit.
  • the voltage generation circuit receives the supply voltage, the control signal and a voltage at the first node Nl. The voltage generation circuit generates the first signal.
  • the level shifter receives the first signal (from the voltage generation circuit) and the control signal, and generates a primary signal.
  • the logic unit receives the first signal from the voltage generation circuit and the primary signal from the level shifter. The logic unit generates the secondary signal.
  • the circuit 604 generates the output signal Vout 614 responsive to the input signal Vin 612 when the control signal has a logic high state.
  • the control signal has a logic high state (logic ‘ 1’)
  • the first NFET is activated.
  • the secondary signal generated by the logic unit activates the first PFET and the second PFET.
  • the first signal generated by the voltage generation circuit is proportional to a maximum one of the first voltage or the second voltage (i.e., whichever one is higher).
  • the circuit 604 stops generating the output signal Vout 614 responsive to the input signal Vin 612 when the control signal has a logic low state.
  • the control signal has a logic low state (logic ‘0’)
  • the first NFET is inactivated, and the third PFET is activated.
  • the secondary signal generated by the logic unit inactivates the second PFET.
  • the first signal generated by the voltage generation circuit is proportional to a voltage at the first node Nl.
  • the switch enables the circuit 604 to operates at high-speed and with low impedance.
  • the circuit 604 support ADC 606 which might operate at high-speed of the order of GSPS.
  • the circuit 604 provides complete switching of the transistors in the switch even when the input signal Vin 612 is as low as 0 volt. This enables the circuit 604 to operate as a high-speed switch with no quiescent current.
  • FIG. 7 is a block diagram of an example device 700.
  • the device 700 is, or is incorporated into or is part of, a server farm, a vehicle, a communication device, a transceiver, a personal computer, a gaming platform, a computing device, or any other type of electronic system.
  • the device 700 may include one or more components that are not described herein for brevity.
  • the device 700 includes a processor 702 and a memory 706.
  • the processor 702 can be a CISC-type CPU (complex instruction set computer), RISC-type CPU (reduced instruction set computer), a digital signal processor (DSP), a microcontroller, a CPL.D (complex programmable logic device) or an FPGA (field programmable gate array).
  • the memory 706 (which can be memory/ such as RAM, flash memory, or disk storage) stores one or more software applications (e.g., embedded applications) that, when executed by the processor 702, performs any suitable function associated with the device 700.
  • software applications e.g., embedded applications
  • the processor 702 may include memory' and logic, which store information frequently accessed from the memory 706.
  • the device 700 includes a circuit 710.
  • the processor 702 may be placed on the same PCB or module as the circuit 710.
  • the processor 702 is external to the device 700.
  • the circuit 710 can function as a switch.
  • the circuit 710 may include additional analog circuitry, digital circuitry, memory and/or software.
  • the circuit 710 may include circuitry' that is similar, in connection and operation, to the circuit 100 of FIG. 1.
  • the circuit 710 includes a switch, a voltage generation circuit, a level shifter and a logic unit.
  • the voltage generation circuit is coupled to the switch.
  • the level shifter is coupled to voltage generation circuit.
  • the logic unit is coupled to the voltage generation circuit, the level shifter and the switch.
  • the switch includes first transistors and second transistors.
  • the first transistors include one or more NFETs, and the second transistors include one or more PFETs.
  • the first transistors and the level shifter receive a control signal.
  • the logic unit generates a secondary signal.
  • the second transistors in the switch receive the secondary signal.
  • the first transistors include a first NFET, and a gate terminal of the first NFET receives the control signal.
  • the second transistors include a first PFET and a second PFET. The gate terminals of the first PFET and the second PFET receive a secondary signal.
  • the voltage generation circuit includes a diode and a third PFET.
  • a source terminal of the third PFET is coupled to drain terminals of the first PFET and the second PFET at a first node Nl. Both the diode and the third PFET are coupled to the level shifter and the logic unit.
  • the voltage generation circuit receives the supply voltage, the control signal and a voltage at the first node Nl. The voltage generation circuit generates the first signal.
  • the level shifter receives the first signal (from the voltage generation circuit) and the control signal, and generates a primary signal.
  • the logic unit receives the first signal from the voltage generation circuit and the primary signal from the level shifter. The logic unit generates the secondary signal.
  • the circuit 710 generates an output signal responsive to an input signal when the control signal has a logic high state.
  • the control signal has a logic high state (logic ‘ 1’)
  • the first NFET is activated.
  • the secondary signal generated by the logic unit activates the first PFET and the second PFET.
  • the first signal generated by the voltage generation circuit is proportional to a maximum one of the first voltage or the second voltage (i.e., whichever one is higher).
  • the circuit 710 stops generating the output signal responsive to the input signal when the control signal has a logic low state.
  • the control signal has a logic low state (logic ‘0’)
  • the first NFET is inactivated, and the third PFET is activated.
  • the secondary signal generated by the logic unit inactivates the second PFET.
  • the first signal generated by the voltage generation circuit is proportional to a voltage at the first node Nl.
  • the switch enables the circuit 710 to operates at high-speed and with low impedance.
  • the circuit 710 support ADCs which operate at high-speeds of the order of GSPS.
  • the circuit 710 provides complete switching of the transistors in the switch even when the input signal is as low as 0 volt. This enables the circuit 710 to operate as a high-speed switch with no quiescent current.
  • “about,” “approximately” or “substantially” preceding a parameter means being within +/- 10 percent of that parameter.

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Logic Circuits (AREA)

Abstract

Dans des exemples décrits, un circuit comprend un commutateur 104. Le commutateur 104 comprend des premiers transistors et des deuxièmes transistors. Un circuit de génération de tension 120 est couplé au commutateur 104. Un dispositif de décalage de niveau 130 est couplé au circuit de génération de tension 120 et est configuré pour recevoir un signal de commande 106. Une unité logique 140 est couplée au dispositif de décalage de niveau 130 et au circuit de génération de tension 120. L'unité logique 140 est configurée pour générer un signal secondaire. Les premiers transistors sont configurés pour recevoir le signal de commande 106, et les deuxièmes transistors sont configurés pour recevoir le signal secondaire.
PCT/US2022/041229 2021-08-24 2022-08-23 Commutateur à sécurité intégrée pour systèmes multidomaines WO2023028060A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IN202141038191 2021-08-24
IN202141038191 2021-08-24
US17/733,714 2022-04-29
US17/733,714 US11863180B2 (en) 2021-08-24 2022-04-29 Fail-safe switch for multidomain systems

Publications (1)

Publication Number Publication Date
WO2023028060A1 true WO2023028060A1 (fr) 2023-03-02

Family

ID=83546797

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2022/041229 WO2023028060A1 (fr) 2021-08-24 2022-08-23 Commutateur à sécurité intégrée pour systèmes multidomaines

Country Status (1)

Country Link
WO (1) WO2023028060A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163199A (en) * 1999-01-29 2000-12-19 Fairchild Semiconductor Corp. Overvoltage/undervoltage tolerant transfer gate
US6911860B1 (en) * 2001-11-09 2005-06-28 Altera Corporation On/off reference voltage switch for multiple I/O standards
US9520869B2 (en) * 2014-12-12 2016-12-13 Stmicroelectronics (Grenoble 2) Sas Analog multiplexer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163199A (en) * 1999-01-29 2000-12-19 Fairchild Semiconductor Corp. Overvoltage/undervoltage tolerant transfer gate
US6911860B1 (en) * 2001-11-09 2005-06-28 Altera Corporation On/off reference voltage switch for multiple I/O standards
US9520869B2 (en) * 2014-12-12 2016-12-13 Stmicroelectronics (Grenoble 2) Sas Analog multiplexer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ANONYMOUS: "Analog-to-digital converter - Wikipedia", 8 July 2017 (2017-07-08), XP055389882, Retrieved from the Internet <URL:https://en.wikipedia.org/wiki/Analog-to-digital_converter> [retrieved on 20170711] *

Similar Documents

Publication Publication Date Title
EP1861760B1 (fr) Circuit d&#39;auto-elevation permettant d&#39;echantillonner des signaux d&#39;entree superieurs a la tension d&#39;alimentation
EP3197051A1 (fr) Circuit de pilotage pour mémoire non volatile
CN100578418C (zh) 能够对超过电源电压的输入进行采样的自举电路
CN1829085B (zh) 三态脉冲密度调制器
KR102122304B1 (ko) 낮은-레이턴시 전압 부스트 회로를 갖는 전압 레벨 시프터
US10488875B1 (en) Dual loop low dropout regulator system
US8044683B2 (en) Logic circuit capable of level shifting
US8031097B2 (en) Multiplying digital-to-analog converter for high speed and low supply voltage
US10811899B2 (en) Power switching circuit
US10972102B2 (en) Interface circuit
US8255711B2 (en) Power supply circuit
US8212407B2 (en) Power supply circuit
US20110121886A1 (en) Clock detector and bias current control circuit
US20130222036A1 (en) Voltage level converting circuit
US11863180B2 (en) Fail-safe switch for multidomain systems
US7902898B2 (en) Delay circuit
WO2023028060A1 (fr) Commutateur à sécurité intégrée pour systèmes multidomaines
CN106559081B (zh) 电流舵型数模转换器及电子装置
KR100647418B1 (ko) 분리 소자로 사용 가능한 레벨 변환기 출력 버퍼 회로
US20140320106A1 (en) Power supply circuit
US9379613B1 (en) Power supply circuit and notebook computer including the same
CN113447697A (zh) 信号检测电路、信号检测方法、触摸面板及显示装置
US11309873B2 (en) Voltage level conversion circuit
US20230299575A1 (en) Protection circuitry
CN115987273A (zh) 最大电压选择电路、芯片及电子设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22783399

Country of ref document: EP

Kind code of ref document: A1