WO2023020783A1 - A method to extend lifespan of an electronic control unit (ecu) and the ecu thereof - Google Patents
A method to extend lifespan of an electronic control unit (ecu) and the ecu thereof Download PDFInfo
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- WO2023020783A1 WO2023020783A1 PCT/EP2022/070723 EP2022070723W WO2023020783A1 WO 2023020783 A1 WO2023020783 A1 WO 2023020783A1 EP 2022070723 W EP2022070723 W EP 2022070723W WO 2023020783 A1 WO2023020783 A1 WO 2023020783A1
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- ecu
- flash
- functions
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 230000006870 function Effects 0.000 claims abstract description 41
- 238000013507 mapping Methods 0.000 claims abstract description 14
- 230000004931 aggregating effect Effects 0.000 claims abstract description 3
- 238000004891 communication Methods 0.000 claims description 6
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- 238000003199 nucleic acid amplification method Methods 0.000 claims description 5
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 238000007794 visualization technique Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/008—Reliability or availability analysis
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/004—Error avoidance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5644—Multilevel memory comprising counting devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/26—Floating gate memory which is adapted to be one-time programmable [OTP], e.g. containing multiple OTP blocks permitting limited update ability
Definitions
- the present disclosure relates to a method to extend lifespan of an Electronic Control Unit (ECU) and the ECU thereof. More specifically the invention discloses an Electronic Control Unit (ECU) configured to extend its own lifespan using the method steps disclosed herein.
- ECU Electronic Control Unit
- the ECU (100) described in accordance with figure 1 is configured to: calculate a remaining service life of each of the plurality of flash cells (101); aggregate the remaining service life of each of the plurality of flash cells (101) to predict lifespan of the ECU (100); map the plurality of functions (F1,F2, Fn) to the plurality of flash devices (Dl,D2,....Dn), each function is performed using at least one flash cell; restrict one or more functions of the ECU (100) based on calculated remaining service and said mapping to extend lifespan of the ECU (100); communicate the predicted lifespan and the one or more functions to a user via the user interface.
Abstract
The present disclosure proposes a method (200) to extend lifespan of an Electronic Control Unit (ECU) and the ECU (100) thereof. The ECU (100) can reside within any anything ranging from vehicles to consumer electronics and performs a plurality of functions (F1, F2, ……Fn) and comprises at least plurality of flash cells (101) (D1, D2, ….Dn). Method step 201 comprises calculating a remaining service life of each of the plurality of flash cells (101). Method step 202 comprises aggregating the remaining service life of each of the plurality of flash cells (101) to predict lifespan of the ECU (100). Method step 203 comprises mapping the plurality of functions (F1, F2, ……Fn) to the plurality of flash cells (101) (D1, D2, ….Dn). Method step 204 comprises restricting one or more functions of the ECU (100) based on calculated remaining service and said mapping to extend lifespan of the ECU (100).
Description
1. Title of the Invention:
A method to extend lifespan of an Electronic Control Unit (ECU) and the ECU thereof.
2. Applicants: a. Name: Robert Bosch Engineering and Business Solutions
Private Limited
Nationality: INDIA
Address: 123, Industrial Layout, Hosur Road, Koramangala,
Bangalore - 560095, Karnataka, India b. Name: Robert Bosch GmbH
Nationality: GERMANY
Address: Feuerbach, Stuttgart, Germany
Complete Specification:
The following specification describes and ascertains the nature of this invention and the manner in which it is to be performed
Field of the invention
[0001] The present disclosure relates to a method to extend lifespan of an Electronic Control Unit (ECU) and the ECU thereof. More specifically the invention discloses an Electronic Control Unit (ECU) configured to extend its own lifespan using the method steps disclosed herein.
Background of the invention
[0002] With the advancement of semiconductor technology, every modern-day machine from vehicles to consumer electronics such as television, microwave and refrigerators around us are implanted with electronic chips that perform a central control function. These electronic chips or electronic control units are critical to the overall functioning of the machines. For example, in a vehicle the electronic engine control unit (ECU) is the central controller and heart of the engine management system. It controls the fuel supply, air management, fuel injection and ignition as well other vehicle functions such as navigation, infotainment etc. The ECU manages all types of powertrain and topologies such as Gasoline, Diesel, CNG, Ethanol and also Hybrid and Fuel Cell system. Hence it is important to monitor the health of the ECU for smooth functioning of the vehicle. One such way is to predict the age and lifespan of the ECU based on its flash memory capacity.
[0003] Flash memory is a data-storage medium used in electronic devices that is an EEPROM (electronically erasable programmable readonly memory) form of computer memory and thus does not require a
power source to retain the data. There are method known in the prior-art that calculate life expectancy of the flash memory based on the number of Data Writes Per Day (Calculated based on the number of writes made throughout the day), the Maximum life in days as specified by flash chip vendor and capacity in GB as specified by flash chip vendor. However there is a need to improve the accuracy of life expectancy calculation by checking all relevant parameters to calculate drive endurance such as Flash Cell Endurance, Storage Time Factor (STF), Acceleration factor for Temperature (AT), Write Amplification Factor (WAF) and further take corrective actions to increase the life of the ECU as a whole. Additionally, a Read/write disturb phenomenon causes any NAND flash device to result in increased raw bit error rate (RBER) over the time if left uncorrected. For the purposes of this invention, we assume, in all state of the art NAND flash devices, the effects of this phenomenon are neutralized with “wear leveling” and following Error Correction Code (ECC) operations. The Uncorrectable Bit Error Rate (UBER) is considered to have least impact on the life of NAND flash device given the UBER limits and P/E Cycles.
[0004] Chinese Patent application CN109918283A titled “Solid state disk service life visualization method and device, electronic equipment and medium” discloses a solid-state disk service life visualization method. The method comprises the steps that firstly, the total write-in amount of a corresponding solid state disk is obtained through calculation according to the whole disk capacity recorded in Smart Log; the service life of the solid state disk can be obtained through simple conversion according to the ratio of the current written amount recorded
in the Smart Log to the total written amount, and finally the converted service life is displayed in a more visual mode through the visualization technology. According to the technical scheme provided by the invention, the more accurate service life of the solid state disk can be obtained and conveniently displayed to a user, so that the user can timely process the data stored in the solid state disk based on the definite residual service life.
Brief description of the accompanying drawings
[0005] An embodiment of the invention is described with reference to the following accompanying drawings:
[0006] Figure 1 depicts an Electronic Control Unit (ECU) (100) adapted to extend its own lifespan;
[0007] Figure 2 illustrates method steps (200) to extend lifespan of the ECU.
Detailed description of the drawings
[0008] Figure 1 depicts an Electronic Control Unit (ECU) adapted to extend its own lifespan. The ECU (100) can reside within any anything ranging from vehicles to consumer electronics and performs a plurality of functions (F1,F2, Fn). The ECU (100) comprises a plurality of flash cells (101) (Di,D2,....Dn), a HMI adapter, a communication module and also other components known to a person skilled in the art. Components such a ECU (100) service life calculator (ESLC), Flash age calculator (FAC), Flash memory mapping manager (FMMM), Function restriction update decider (FRUD) and at least a Write cycle monitor (WCM) are
modules that can be implemented as a software logic or in some embodiments a combination of software or hardware thereof.
[0009] ECU service life calculator (ESLC), Flash age calculator (FAC), Flash memory mapping manager (FMMM) and Function restriction update decider (FRUD) are modules configured to perform a specific function as suggestive of their names. ESEC calculates a service of the ECU. FAC calculates a remaining service life of each of the plurality of flash cells (101) based on the flash cell endurance. FMMM maps the plurality of functions (Fi,F2, Fn) performed by the ECU to the plurality of flash cells (101) (Di,D2,....Dn), wherein each function is performed using at least one flash cell. FRUD restricts one or more functions of the ECU based on calculated remaining service and said mapping to extend lifespan of the ECU. A WCM monitors the total number of write cycles or total number of bytes written into the flash cells. An HMI adapter and a communication module helps connect the ECU with a user Interface (UI). The UI may reside locally in the concerned machine itself or can be remotely located and in communication with the ECU via a network or one or more wireless modes of communication.
[0010] A basic flash cell is a type of electrically erasable programmable read-only memory (EEPROM) that consists of a storage transistor with a control gate and a floating gate, which is insulated from the rest of the transistor by a thin dielectric material or oxide layer. The floating gate stores the electrical charge and controls the flow of the electrical current. A simple ECU (100) contains a number of these flash
cells that help ECU (100) perform a plurality of functions (F1,F2, . Fn).
Flash storage has a limit on the number of write (or specifically program/erase) cycles. Each Program/Erase (P/E) cycle impacts on the quality of the silicon substrate, reducing reliability of reading the contents stored. Eventually it becomes unreliable in storing data and can no longer be used. The number of P/E cycles that a particular type of flash can tolerate is called the endurance. The endurance can be calculated in two ways; as a remaining DW (Data Writes) or remaining TBW (Total Bytes Written). Conventionally it is calculated using the following formulae:
Flash device endurance = DWPD * Max-Life-in-days * capacity-in-GB
(In GBs) 1000
DWPD = Data Writes Per Day (Calculated based on the number of writes made throughout the day)
Max-Life-in-days as specified by flash chip vendor
Capacity-in-GB as specified by flash chip vendor
The above parameters required by the described method can be obtained by sending specific commands to the flash memory firmware.
[0011] The ECU (100) described in accordance with figure 1 is configured to: calculate a remaining service life of each of the plurality of flash cells (101); aggregate the remaining service life of each of the plurality of flash cells (101) to predict lifespan of the ECU (100); map the plurality of functions (F1,F2, Fn) to the plurality of flash devices (Dl,D2,....Dn), each function is performed using at least one flash cell;
restrict one or more functions of the ECU (100) based on calculated remaining service and said mapping to extend lifespan of the ECU (100); communicate the predicted lifespan and the one or more functions to a user via the user interface.
[0012] In an exemplary embodiment of the present invention, the ECU is configured to calculate the remaining service life of each of the flash cells is calculated in following way. Foremost it determines an intermediate Flash Cell Endurance based on maximum number of program/erase (P/E) cycles for the given flash cell architecture. Next it calculates the final Flash cell endurance based a Storage Time Factor, Acceleration factor for Temperature, Write Amplification Factor.
Flash device endurance = Flash Cell Endurance
(In number of DWs) STF x AT x WAF
Wherein the Flash Cell Endurance = Maximum number of program/erase (P/E) cycles for the given flash architecture
STF = Storage Time Factor which adjusts for length of time in storage
AT = Acceleration factor for Temperature which adjusts for the storage temperature.
WAF = Write Amplification Factor which adjusts for how efficiently flash is being used.
Next it calculates the number of program/erase (P/E) cycles already utilized by the flash cell. Finally, the number of program/erase (P/E)
cycles already utilized is deducted from the final value of flash cell endurance to get remaining service life for the flash cell.
[0013] Figure 2 illustrates method steps to extend lifespan of the ECU (100) described in accordance with figure 1. Method step 201 comprises calculating a remaining service life of each of the plurality of flash cells (101). This can be done by the Flash age calculator (FAC) in two ways, by either using the conventional method describe in para [0010] or in accordance with an exemplary embodiment as in para [0012]. One can also use both the aforementioned methods to accurately calculate the lifetime of the flash memory using the DW and TBW. In the first step, by comparing the total DWs against the utilized DWs. If the counters are matching, the flash device is marked as expired. When the DWs are not matching, it would further check the TBW capacity of the device to verify if the flash memory can accept the amount of data to be written based on the average daily written data volume.
Service life of flash cell (based on DWs) = Total number of P/E cycles supported by flash memory - The total number of write cycles already made.
Service life of flash cell (based on TBW) = Total number of Bytes can write into flash memory - The total number of Bytes already written
This calculation is done for every flash cell or flash memory chip on the ECU / Electronic device at the defined frequency and remaining service life of ECU (100) is calculated based on flash memory onboard with shortest life.
[0014] Method step 202 comprises aggregating the remaining service life of each of the plurality of flash cells (101) to predict lifespan of the ECU. This is done by the ECU service life calculator (ESLC) using the following formulation.
Future expiry = Total number of writes supported by flash memory - Number of writes required in the new operation + Total number of writes already written.
Table 1
[0015] Method step 203 comprises mapping the plurality of functions (F1,F2, Fn) to the plurality of flash cells (101) (Dl,D2,....Dn), each function is performed using at least one flash cell. The step makes use of a mapping table between the ECU functions and the on-board flash memory cells using the Flash memory mapping
manager (FMMM). Based on the remaining service life of each cell, the respective function is characterized as read/write or read only.
Sample Mapping table method to extend the service life of ECU working in an automotive domain.
Table 2
[0016] Method step 204 comprises restricting one or more functions of the ECU based on calculated remaining service and said mapping to extend lifespan of the ECU. The one or more functions comprise the functions that are performed using the flash cells whose remaining service life is below a pre-determined threshold. If the life expectancy of a flash cell is expired, then that cell within the ECU will be restricted for future re-write and the upgrade for that particular function(s) will be temporarily disabled by the Function restriction update decider (FRUD). The user is notified regarding the restriction of the one or more functions and the remaining service life of the ECU.
Table 3
[0017] The core concept used to determine lifespan of the ECU can be extended to incorporate other add-on features. For example in an embodiment wherein the ECU resides in vehicle, the ECU periodically sends vital information such as remaining life of all on-board flash devices, functions being restricted and remaining service life of ECU information to a OEM or service provider hosted backend server through on board “communication module”. The backend server evaluates such data from all ECUs in a vehicle with the help of state of the art ML algorithms to determine and trigger necessary actions for a preventive and (or) predictive maintenance services. The ML algorithms shall be trained with the help of data acquired during a predetermined period of fleet operations and (or) offline data available from the conventional / present approaches.
[0018] This idea to develop a method to extend lifespan of an Electronic Control Unit (ECU) and the ECU thereof helps to predict expected service appointments. In the context of vehicles predicting lifetime of individual ECUs onboard a vehicle helps in improved fleet management services. The proposed method is applicable for any electronics devices with flash memory such as home appliances, smart
phones and other consumer electronic gadgets to calculate the service life of an electronic device. The accuracy of life expectancy calculation is improved using the described method (200) by checking all relevant parameters to calculate drive endurance such as STF, AT, WAF. By predicting the life of an ECU, any damage & data loss can be averted by alerting end users well in advance. In critical areas such as automotive safety of in an industrial facility, potential safety hazards can be prevented by predicting potentially fatal failures.
[0019] It must be understood that the embodiments explained in the above detailed description are only illustrative and do not limit the scope of this invention. Any modification to the method (200) to extend lifespan of an Electronic Control Unit (ECU) and the ECU (100) thereof are envisaged and form a part of this invention. The scope of this invention is limited only by the claims.
Claims
1. A method (200) to extend lifespan of an Electronic Control Unit (ECU (100)), the ECU (100) comprising a plurality of flash cell (D1,D2,....Dn), the ECU (100) performing a plurality of functions (FI,F2, Fn), the method comprising: calculating (201) a remaining service life of each of the plurality of flash cells (101); aggregating (202) the remaining service life of each of the plurality of flash cells (101) to predict lifespan of the ECU (100); mapping (203) the plurality of functions (Fi,F2, . Fn) to the plurality of flash cells (101) (Di,D2,....Dn), each function is performed using at least one flash cell; restricting (204) one or more functions of the ECU (100) based on calculated remaining service and said mapping to extend lifespan of the ECU (100).
2. The method (200) to extend lifespan of an Electronic Control Unit (ECU (100)) as claimed in claim 1, wherein the remaining service life of each of the flash cells is calculated (201) through method steps comprising: determining an intermediate Flash Cell Endurance based on maximum number of program/erase (P/E) cycles for the given flash cell architecture;
calculating the final Flash cell endurance based a Storage Time Factor, Acceleration factor for Temperature, Write Amplification Factor; calculating the number of program/erase (P/E) cycles already utilized by the flash cell; deducting number of program/erase (P/E) cycles already utilized from the final value of flash cell endurance to get remaining service life for the flash cell.
3. The method (200) to extend lifespan of an Electronic Control Unit (ECU (100)) as claimed in claim 1, wherein the one or more functions comprise the functions that are performed using the flash cells whose remaining service life is below a predetermined threshold.
4. An Electronic Control Unit (ECU (100)) adapted to extend it’s own lifespan, the ECU (100) comprising a plurality of flash cells (101) (Dl,D2,....Dn), the ECU (100) performing a plurality of functions (F1,F2, Fn), the ECU (100) in communication with an user interface, the ECU (100) configured to: calculate a remaining service life of each of the plurality of flash cells (101); aggregate the remaining service life of each of the plurality of flash cells (101) to predict lifespan of the ECU (100);
map the plurality of functions (F1,F2, Fn) to the plurality of flash devices (Dl,D2,....Dn), each function is performed using at least one flash cell; restrict one or more functions of the ECU (100) based on calculated remaining service and said mapping to extend lifespan of the ECU (100); communicate the predicted lifespan and the one or more functions to a user via the user interface.
5. The Electronic Control Unit (ECU (100)) adapted to extend it’s own lifespan as claimed in claim 4, wherein ECU (100) is configured to calculate the remaining service life of each of the flash cells by: determining an intermediate Flash Cell Endurance based on maximum number of program/erase (P/E) cycles for the given flash cell architecture; calculating the final Flash cell endurance based a Storage Time Factor, Acceleration factor for Temperature, Write Amplification Factor; calculating the number of program/erase (P/E) cycles already utilized by the flash cell; deducting number of program/erase (P/E) cycles already utilized from the final value of flash cell endurance to get remaining service life for the flash cell.
15
The Electronic Control Unit (ECU (100)) adapted to extend it’s own lifespan as claimed in claim 4, wherein the one or more functions comprise the functions that are performed using the flash cells whose remaining service life is below a predetermined threshold.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN202141034301 | 2021-07-30 | ||
| IN202141034301 | 2021-07-30 |
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| WO2023020783A1 true WO2023020783A1 (en) | 2023-02-23 |
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| PCT/EP2022/070723 WO2023020783A1 (en) | 2021-07-30 | 2022-07-25 | A method to extend lifespan of an electronic control unit (ecu) and the ecu thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070260811A1 (en) * | 2006-05-08 | 2007-11-08 | Merry David E Jr | Systems and methods for measuring the useful life of solid-state storage devices |
| US20090138654A1 (en) * | 2006-12-11 | 2009-05-28 | Pantas Sutardja | Fatigue management system and method for hybrid nonvolatile solid state memory system |
| US20130179624A1 (en) * | 2012-01-09 | 2013-07-11 | Timothy M. Lambert | Systems and methods for tracking and managing non-volatile memory wear |
| US20150106556A1 (en) * | 2008-06-18 | 2015-04-16 | Super Talent Electronics, Inc. | Endurance Translation Layer (ETL) and Diversion of Temp Files for Reduced Flash Wear of a Super-Endurance Solid-State Drive |
| CN109918283A (en) | 2019-03-20 | 2019-06-21 | 浪潮商用机器有限公司 | Solid state hard disk service life method for visualizing, device, electronic equipment and medium |
| US20190278498A1 (en) * | 2018-03-08 | 2019-09-12 | Toshiba Memory Corporation | Workload-Adaptive Overprovisioning in Solid State Storage Drive Arrays |
| US11061768B1 (en) * | 2020-02-14 | 2021-07-13 | Western Digital Technologies, Inc. | Storage device with increased endurance |
-
2022
- 2022-07-25 WO PCT/EP2022/070723 patent/WO2023020783A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070260811A1 (en) * | 2006-05-08 | 2007-11-08 | Merry David E Jr | Systems and methods for measuring the useful life of solid-state storage devices |
| US20090138654A1 (en) * | 2006-12-11 | 2009-05-28 | Pantas Sutardja | Fatigue management system and method for hybrid nonvolatile solid state memory system |
| US20150106556A1 (en) * | 2008-06-18 | 2015-04-16 | Super Talent Electronics, Inc. | Endurance Translation Layer (ETL) and Diversion of Temp Files for Reduced Flash Wear of a Super-Endurance Solid-State Drive |
| US20130179624A1 (en) * | 2012-01-09 | 2013-07-11 | Timothy M. Lambert | Systems and methods for tracking and managing non-volatile memory wear |
| US20190278498A1 (en) * | 2018-03-08 | 2019-09-12 | Toshiba Memory Corporation | Workload-Adaptive Overprovisioning in Solid State Storage Drive Arrays |
| CN109918283A (en) | 2019-03-20 | 2019-06-21 | 浪潮商用机器有限公司 | Solid state hard disk service life method for visualizing, device, electronic equipment and medium |
| US11061768B1 (en) * | 2020-02-14 | 2021-07-13 | Western Digital Technologies, Inc. | Storage device with increased endurance |
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