WO2023020095A1 - Radio frequency power amplifier circuit, transmission module, communication device, and communication system - Google Patents
Radio frequency power amplifier circuit, transmission module, communication device, and communication system Download PDFInfo
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- WO2023020095A1 WO2023020095A1 PCT/CN2022/099445 CN2022099445W WO2023020095A1 WO 2023020095 A1 WO2023020095 A1 WO 2023020095A1 CN 2022099445 W CN2022099445 W CN 2022099445W WO 2023020095 A1 WO2023020095 A1 WO 2023020095A1
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- 238000010295 mobile communication Methods 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
Definitions
- the application belongs to the field of communication equipment, and in particular relates to a radio frequency power amplifier circuit, a transmitting module, a communication equipment and a communication system.
- 5GNR is the abbreviation of 5G New Radio, which is the hottest research and development focus in today's communication industry.
- the integration of RF devices in 5G communications is an important development trend, and higher integration modules are the core of 5G RF solutions.
- the RF front-end module integrates two or more discrete devices such as RF power amplifiers, switches, low-noise amplifiers, filters, and duplexers into one module, thereby improving integration and performance and miniaturizing the volume.
- the present application provides a radio frequency power amplifying circuit, including: a transformer, the primary side of the transformer includes a first power amplifier terminal, a second power amplifier terminal and an intermediate tap, the intermediate tap is connected to a power supply, and the transformer’s
- the secondary side includes a power output terminal and a reference terminal;
- the first capacitor module is connected between the reference terminal and the ground, and the capacitance variation range of the first capacitor module includes a first capacitance value and a second capacitance value;
- the second capacitor module is connected between the power output terminal and the ground, and the capacitance variation range of the second capacitor module includes a third capacitance value and a fourth capacitance value.
- the first capacitance module may include: a first capacitor, whose capacitance value is the first capacitance value; a second capacitor, whose capacitance value is the second capacitance value; the second capacitance module includes : the third capacitor, the capacitance value of which is the third capacitance value; the fourth capacitor, the capacitance value of which is the fourth capacitance value.
- the radio frequency power amplification circuit further includes: a first selection switch connected to the first capacitor and the second capacitor; a second selection switch connected to the third capacitor and the fourth capacitor.
- the radio frequency power amplification circuit further includes: a first power amplifier connected to the first power amplifier terminal; and a second power amplifier. Connect with the second power amplifier terminal.
- the radio frequency power amplifier circuit works at the first frequency, the capacitance value of the first capacitance module is controlled to be the first capacitance value, and the capacitance value of the second capacitance module is controlled to be the third capacitance value; the circuit works At the second frequency, the capacitance value of the first capacitance module is controlled to be the second capacitance value, and the capacitance value of the second capacitance module is controlled to be the fourth capacitance value.
- the first frequency is within the range of 1.7GHz-2.1GHz; the second frequency is within the range of 2.3GHz-2.7GHz.
- radio frequency power amplification circuit is used for 5G communication.
- the present application also provides a transmitting module, including any radio frequency power amplifying circuit mentioned above.
- the present application also provides a communication device, including any one of the aforementioned radio frequency power amplification circuits, or any one of the aforementioned transmitting modules.
- the present application also provides a communication system, including any of the aforementioned radio frequency power amplification circuits, or any of the aforementioned transmitting modules.
- the radio frequency power amplifying circuit Utilize the radio frequency power amplifying circuit, transmitting module, communication equipment and communication system. It can be achieved by connecting a capacitor module with variable capacitance on the secondary coil of the transformer. And when the radio frequency power amplifying circuit works in different frequency ranges, it can control the capacitance of the capacitor module to match the working frequency. This makes the radio frequency power amplifier circuit adaptable to different operating frequencies. Therefore, it is not necessary to configure multiple radio frequency power amplifier circuits for different operating frequencies. Furthermore, the topological structure of the radio frequency power amplifying circuit can be simplified, the volume of the radio frequency power amplifying circuit can be reduced, and the integration degree of the equipment can be improved. The production cost of the radio frequency power amplifier circuit is reduced.
- FIG. 1 shows a schematic diagram of a topology of a radio frequency power amplifier circuit in the prior art.
- FIG. 2 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
- FIG. 3 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
- FIG. 4 shows a schematic topology diagram of a radio frequency power amplifier circuit according to an embodiment of the present application.
- FIG. 5 shows a schematic diagram of the transmission gain curve of the circuit shown in FIG. 4 .
- FIG. 1 shows a schematic diagram of a topology of a radio frequency power amplifier circuit in the prior art.
- Currently existing radio frequency power amplifier circuits generally include the circuit parts shown in FIG. 1 .
- the circuit 1000 includes a transformer TF.
- the transformer TF includes a primary side and a secondary side. Among them, the primary side is used to access the radio frequency differential signal.
- the secondary side is used for RF signal output.
- Capacitors C1 and C3 are generally provided on the secondary side as output frequency selection capacitors. Capacitors C1 and C3 can resonate with TF and jointly determine the operating frequency of the circuit 1000 .
- FIG. 2 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
- FIG. 3 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
- FIG. 4 shows a schematic topology diagram of a radio frequency power amplifier circuit according to an embodiment of the present application.
- the circuit 2000 may include a transformer TF and capacitor modules 211 and 212 .
- the transformer TF may include a primary side and a secondary side.
- the primary side can be connected to the differential signal of the radio frequency input signal.
- the secondary side of the transformer TF can be used as the output terminal of the circuit 2000 .
- the primary winding of the transformer TF includes a terminal PAI1, a terminal PAI2 and an intermediate tap. Wherein, the middle tap can be connected with the power supply VCC.
- the terminal PAI1 and the terminal PAI2 can be respectively connected to two ends of the radio frequency differential signal. At least one of the two ends PAO1 and PAO2 of the secondary winding can be used as a signal output end.
- terminal PAO2 can be used as a signal output terminal and connected to an antenna.
- the capacitor modules 211 and 212 can be respectively connected to both ends of the secondary winding of the transformer TF.
- the capacitor module 211 can be connected between the terminal PAO1 of the secondary winding of the transformer and the ground
- the capacitor module 212 can be connected between the terminal PAO2 of the secondary winding of the transformer and the ground.
- the capacitor modules 211 and 212 can be used as frequency-selective capacitors of the circuit 2000 , resonate with the transformer TF, and jointly determine the working range of the circuit 2000 .
- the capacitance values of the capacitor modules 211 and 212 can be changed under control.
- the variation range of the capacitance value of the capacitance module 211 includes a first capacitance value and a second capacitance value.
- the variation range of the capacitance value of the capacitance module 212 includes a third capacitance value and a fourth capacitance value.
- the capacitor module 211 may include capacitors C1 and C2 .
- the capacitance value of the capacitor C1 may be the first capacitance value
- the capacitance value of the capacitor C2 may be the second capacitance value.
- the capacitor module may include selection switches connected to the capacitor C1 and the capacitor C2 respectively. The purpose of controlling the capacitance value of the capacitance module can be achieved by controlling the selection switch to control the connection of the capacitor C1 and/or the capacitor C2.
- the selection switch may be two switches respectively connected to the capacitor C1 and the capacitor C2, or may be a single-pole double-throw switch Switch1 as shown in the exemplary embodiment.
- the capacitor module 212 may include capacitors C3 and C4 .
- the capacitance value of the capacitor C3 may be the third capacitance value
- the capacitance value of the capacitor C4 may be the fourth capacitance value.
- the capacitor module may include selection switches connected to the capacitor C3 and the capacitor C4 respectively. The purpose of controlling the capacitance value of the capacitance module can be achieved by controlling the selection switch to control the connection of the capacitor C3 and/or the capacitor C4.
- the selection switch may be two switches respectively connected to the capacitor C3 and the capacitor C4, or may be a single pole double throw switch Switch2 as shown in the exemplary embodiment.
- the operating frequency range of the circuit 2000 may include the first frequency and the second frequency.
- the capacitance value of the capacitance module 211 can be controlled to be the first capacitance value
- the capacitance value of the capacitance module 212 can be controlled to be the third capacitance value.
- the capacitance value of the capacitance module 211 can be controlled to be the second capacitance value
- the capacitance value of the capacitance module 212 can be controlled to be the fourth capacitance value.
- the first frequency may be within the range of MB: 1.7GHz-2.1GHz;
- the second frequency may be within the range of HB: 2.3GHz-2.7GHz.
- the circuit 2000 can be used for 5G mobile communication.
- the circuit 2000 may also include a power amplifier (not shown). Further, the circuit 2000 may include a differential power amplifier. A pair of differential output terminals of the power amplifier can be connected to the terminal PAI1 and the terminal PAI2 respectively. Optionally, the circuit 2000 may also include a differential circuit composed of two or more power amplifiers for differential signal processing. Its output terminals are respectively connected with terminal PAI1 and terminal PAI2.
- FIG. 5 shows a schematic diagram of the transmission gain curve of the circuit shown in FIG. 4 .
- the transmission gain curve of the circuit 2000 may be a thick line in FIG. 5 . This curve may be similar to the curve shown in FIG. 2 . At this time, the circuit 2000 has good transmission characteristics for signals in the frequency band MB: 1.7GHz-2.1GHz.
- the transmission gain curve of circuit 2000 may be the thin line in FIG. 5 . This curve may be similar to the curve shown in FIG. 3 . At this time, the circuit 2000 has good transmission characteristics for signals in the frequency band HB: 2.3GHz-2.7GHz.
- the circuit 2000 can simultaneously take into account the frequency band MB: 1.7GHz-2.1GHz and the frequency band HB: 2.3GHz-2.7GHz. Therefore, the complexity of the circuit topology of the mobile communication device can be reduced, the wiring area can be reduced, and the system integration degree of the communication device can be improved.
- the present application also provides an embodiment of a launch module.
- the transmitting module includes any radio frequency power amplifier circuit mentioned above.
- the transmitting module can be used for 5G mobile communication.
- the present application also provides a communication device according to an embodiment.
- the communication device includes any one of the aforementioned radio frequency power amplification circuits, or any one of the aforementioned transmitting modules.
- the communication device may be a portable mobile communication device.
- the communication device may be a 5G mobile communication device.
- the present application also provides an embodiment communication system.
- the communication system includes any of the aforementioned radio frequency power amplifier circuits, or any of the aforementioned transmitting modules.
- the communication system may comprise at least one of the aforementioned communication devices.
- the communication system may communicate using a 5G communication protocol.
- the radio frequency power amplifying circuit Utilize the radio frequency power amplifying circuit, transmitting module, communication equipment and communication system. It can be achieved by connecting a capacitor module with variable capacitance on the secondary coil of the transformer. And when the radio frequency power amplifying circuit works in different frequency ranges, it can control the capacitance of the capacitor module to match the working frequency. This makes the radio frequency power amplifier circuit adaptable to different operating frequencies. Therefore, it is not necessary to configure multiple radio frequency power amplifier circuits for different operating frequencies. Furthermore, the topological structure of the radio frequency power amplifying circuit can be simplified, the volume of the radio frequency power amplifying circuit can be reduced, and the integration degree of the equipment can be improved. The production cost of the radio frequency power amplifier circuit is reduced.
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Abstract
The present application relates to a radio frequency power amplifier circuit, a transmission module, a communication device, and a communication system. The radio frequency power amplifier circuit comprises: a transformer, wherein a primary side of the transformer comprises a first power amplifier end, a second power amplifier end, and an intermediate tap; the intermediate tap is connected to a power supply; a secondary side of the transformer comprises a power output end and a reference end; a first capacitor module connected across the reference end and the ground, a capacitance variation range of the first capacitor module comprising a first capacitance value and a second capacitance value; and a second capacitor module connected across the power output end and the ground, a capacitance variation range of the second capacitor module comprising a third capacitance value and a fourth capacitance value.
Description
本申请属于通信设备领域,特别涉及一种射频功率放大电路、一种发射模组、一种通信设备及一种通信系统。The application belongs to the field of communication equipment, and in particular relates to a radio frequency power amplifier circuit, a transmitting module, a communication equipment and a communication system.
5GNR是5G New Radio的简称,是当今通信产业最炙手可热的研究和开发重点。5G通信中射频器件集成化是一个重要的发展趋势,更高集成度模组是5G射频方案核心。射频前端模组是将射频功率放大器、开关、低噪声放大器、滤波器和双工器等两种或两种以上的分立器件集成为一个模组,从而提高集成度与性能并使体积小型化。5GNR is the abbreviation of 5G New Radio, which is the hottest research and development focus in today's communication industry. The integration of RF devices in 5G communications is an important development trend, and higher integration modules are the core of 5G RF solutions. The RF front-end module integrates two or more discrete devices such as RF power amplifiers, switches, low-noise amplifiers, filters, and duplexers into one module, thereby improving integration and performance and miniaturizing the volume.
目前,一般来说,不同的频率范围如MB:1.7GHz-2.1GHz,HB:2.3GHz-2.7GHz,需要两个不同的完整的功率放大电路。这样占用较大的面积,不利于集成化。At present, generally speaking, different frequency ranges such as MB: 1.7GHz-2.1GHz, HB: 2.3GHz-2.7GHz require two different complete power amplifier circuits. This occupies a larger area, which is not conducive to integration.
发明内容Contents of the invention
基于此,本申请提供了一种射频功率放大电路,包括:变压器,所述变压器的原边包括第一功放端、第二功放端和中间抽头,所述中间抽头与电源连接,所述变压器的副边包括功率输出端和参考端;第一电容模组,跨接于所述参考端和地之间,所述第一电容模组的电容变化范围包括第一电容值和第二电容值;第二电容模组,跨接于所述功率输出端和地之间,所述第二电容模组的电容变化范围包括第三电容值和第四电容值。Based on this, the present application provides a radio frequency power amplifying circuit, including: a transformer, the primary side of the transformer includes a first power amplifier terminal, a second power amplifier terminal and an intermediate tap, the intermediate tap is connected to a power supply, and the transformer’s The secondary side includes a power output terminal and a reference terminal; the first capacitor module is connected between the reference terminal and the ground, and the capacitance variation range of the first capacitor module includes a first capacitance value and a second capacitance value; The second capacitor module is connected between the power output terminal and the ground, and the capacitance variation range of the second capacitor module includes a third capacitance value and a fourth capacitance value.
可选地,所述第一电容模组可以包括:第一电容器,电容值为所述第一电容值;第二电容器,电容值为所述第二电容值;所述第二电容模组包括:第三电容器,电容值为所述第三电容值;第四电容器,电容值为所述第四电容值。Optionally, the first capacitance module may include: a first capacitor, whose capacitance value is the first capacitance value; a second capacitor, whose capacitance value is the second capacitance value; the second capacitance module includes : the third capacitor, the capacitance value of which is the third capacitance value; the fourth capacitor, the capacitance value of which is the fourth capacitance value.
可选地,该射频功率放大电路还包括:第一选择开关,与所述第一电容器和所述第二电容器连接;第二选择开关,与所述第三电容器和所述第四电容器连接。Optionally, the radio frequency power amplification circuit further includes: a first selection switch connected to the first capacitor and the second capacitor; a second selection switch connected to the third capacitor and the fourth capacitor.
进一步地,该射频功率放大电路还包括:第一功率放大器,与所述第一功放端连接;第二功率放大器。与所述第二功放端连接。Further, the radio frequency power amplification circuit further includes: a first power amplifier connected to the first power amplifier terminal; and a second power amplifier. Connect with the second power amplifier terminal.
进一步地,该射频功率放大电路工作于第一频率下时,控制第一电容模组的电容值为第一电容值,控制第二电容模组的电容值为第三电容值;所述电路工作于第二频率下时,控制第一电容模组的电容值为第二电容值,控制第二电容模组的电容值为第四电容值。Further, when the radio frequency power amplifier circuit works at the first frequency, the capacitance value of the first capacitance module is controlled to be the first capacitance value, and the capacitance value of the second capacitance module is controlled to be the third capacitance value; the circuit works At the second frequency, the capacitance value of the first capacitance module is controlled to be the second capacitance value, and the capacitance value of the second capacitance module is controlled to be the fourth capacitance value.
进一步地,所述第一频率在1.7GHz-2.1GHz范围以内;所述第二频率在2.3GHz-2.7GHz范围以内。Further, the first frequency is within the range of 1.7GHz-2.1GHz; the second frequency is within the range of 2.3GHz-2.7GHz.
进一步地,该射频功率放大电路用于5G通信。Further, the radio frequency power amplification circuit is used for 5G communication.
本申请还提供了一种发射模组,包括前述任意一种射频功率放大电路。The present application also provides a transmitting module, including any radio frequency power amplifying circuit mentioned above.
本申请还提供了一种通信设备,包括前述任意一种射频功率放大电路,或者前述任意一种发射模组。The present application also provides a communication device, including any one of the aforementioned radio frequency power amplification circuits, or any one of the aforementioned transmitting modules.
本申请还提供了一种通信系统,包括前述任意一种射频功率放大电路,或者前述任意一种发射模组。The present application also provides a communication system, including any of the aforementioned radio frequency power amplification circuits, or any of the aforementioned transmitting modules.
利用上述射频功率放大电路、发射模组、通信设备和通信系统。可以通过在变压器的次级线圈上连接容值可变的电容模组。并可以在射频功率放大电路工作于不同频率范围时,可以控制电容模组的容值与工作频率匹配。使得该射频功率放大电路可以适应不同的工作频率。从可以不必为不同工作频率配置多个射频功率放大电路。进而可以简化射频功率放大电路的拓扑结构,缩小射频功率放大电路的体积,提高设备的集成度。降低射频功率放大电路的生产成本。Utilize the radio frequency power amplifying circuit, transmitting module, communication equipment and communication system. It can be achieved by connecting a capacitor module with variable capacitance on the secondary coil of the transformer. And when the radio frequency power amplifying circuit works in different frequency ranges, it can control the capacitance of the capacitor module to match the working frequency. This makes the radio frequency power amplifier circuit adaptable to different operating frequencies. Therefore, it is not necessary to configure multiple radio frequency power amplifier circuits for different operating frequencies. Furthermore, the topological structure of the radio frequency power amplifying circuit can be simplified, the volume of the radio frequency power amplifying circuit can be reduced, and the integration degree of the equipment can be improved. The production cost of the radio frequency power amplifier circuit is reduced.
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,还可以根据这些附图获得其他的附图,而并不超出本申请要求保护的范围。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. Those skilled in the art can also obtain other drawings based on these drawings without going beyond the protection scope of the present application.
图1示出了现有技术中的射频功率放大电路的拓扑结构示意图。FIG. 1 shows a schematic diagram of a topology of a radio frequency power amplifier circuit in the prior art.
图2示出了根据MB频段配置参数时,图1所示电路的传输增益曲线示意图。FIG. 2 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
图3示出了根据MB频段配置参数时,图1所示电路的传输增益曲线示意图。FIG. 3 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
图4示出了本申请的一个实施例射频功率放大电路的拓扑结构示意图。FIG. 4 shows a schematic topology diagram of a radio frequency power amplifier circuit according to an embodiment of the present application.
图5示出了图4所示电路的传输增益曲线示意图。FIG. 5 shows a schematic diagram of the transmission gain curve of the circuit shown in FIG. 4 .
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.
图1示出了现有技术中的射频功率放大电路的拓扑结构示意图。目前现有的射频功率放大电路一般包含图1所示的电路部分。FIG. 1 shows a schematic diagram of a topology of a radio frequency power amplifier circuit in the prior art. Currently existing radio frequency power amplifier circuits generally include the circuit parts shown in FIG. 1 .
如图1所示,电路1000包括变压器TF。变压器TF包括原边和副边。其中原边用于接入射频差分信号。副边用于射频信号输出。在副边一般会设置电容器C1和C3,作为输出端选频电容。电容器C1和C3可以与TF谐振,共同决定电路1000的工作频率。As shown in FIG. 1 , the circuit 1000 includes a transformer TF. The transformer TF includes a primary side and a secondary side. Among them, the primary side is used to access the radio frequency differential signal. The secondary side is used for RF signal output. Capacitors C1 and C3 are generally provided on the secondary side as output frequency selection capacitors. Capacitors C1 and C3 can resonate with TF and jointly determine the operating frequency of the circuit 1000 .
图2示出了根据MB频段配置参数时,图1所示电路的传输增益曲线示意图。FIG. 2 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
如图2所示,当根据MB频段配置电容器C1和C2的参数时。在频率m1=1.700GHz处,电路1000的增益为-0.912dB;在频率m2=2.100GHz处,电路1000的增益为-0.959dB。可见对频段MB:1.7GHz-2.1GHz范围的信号,电路1000拥有不错的传输特性,其衰减较小。但是,在频率m3=2.300GHz处,电路1000的增益为-2.124dB;在频率m4=2.700GHz处,电路1000的增益为-6.024GHz。可见在频段HB:2.3GHz-2.7GHz范围内,电路1000的衰减较大,难以满足要求。As shown in Figure 2, when configuring the parameters of capacitors C1 and C2 according to the MB frequency band. At the frequency m1 = 1.700 GHz, the gain of the circuit 1000 is -0.912 dB; at the frequency m2 = 2.100 GHz, the gain of the circuit 1000 is -0.959 dB. It can be seen that for signals in the frequency band MB: 1.7GHz-2.1GHz, the circuit 1000 has good transmission characteristics, and its attenuation is small. However, at frequency m3 = 2.300 GHz, the gain of circuit 1000 is -2.124 dB; at frequency m4 = 2.700 GHz, the gain of circuit 1000 is -6.024 GHz. It can be seen that in the frequency band HB: 2.3GHz-2.7GHz, the attenuation of the circuit 1000 is relatively large, which is difficult to meet the requirements.
图3示出了根据MB频段配置参数时,图1所示电路的传输增益曲线示意图。FIG. 3 shows a schematic diagram of a transmission gain curve of the circuit shown in FIG. 1 when parameters are configured according to MB frequency bands.
如图3所示,当根据HB频段配置电容器C1和C2的参数时。As shown in Figure 3, when configuring the parameters of capacitors C1 and C2 according to the HB frequency band.
在频率m3=2.300GHz处,电路1000的增益为-0.669dB;在频率m4=2.700GHz处,电路1000的增益为-0.799GHz。可见在频段HB:2.3GHz-2.7GHz范围内,电路1000的衰减较小,有着不错的传输特性。但是,在频率m1=1.700GHz处,电路1000的增益为-2.364dB;在频率m2=2.100GHz处,电路1000的增益为-1.051dB。可见对频段MB:1.7GHz-2.1GHz范围的信号,电路1000衰减较大,难以满足要求。At frequency m3=2.300GHz, the gain of circuit 1000 is -0.669dB; at frequency m4=2.700GHz, the gain of circuit 1000 is -0.799GHz. It can be seen that in the frequency band HB: 2.3GHz-2.7GHz, the attenuation of the circuit 1000 is small, and it has good transmission characteristics. However, at frequency m1 = 1.700 GHz, the gain of circuit 1000 is -2.364 dB; at frequency m2 = 2.100 GHz, the gain of circuit 1000 is -1.051 dB. It can be seen that for signals in the frequency band MB: 1.7GHz-2.1GHz, the circuit 1000 attenuates greatly, which is difficult to meet the requirements.
由图2和图3可以看到,电路1000难以同时兼顾频段MB:1.7GHz-2.1GHz和频段HB:2.3GHz-2.7GHz。而目前的通信需求往往需要兼顾上述两个频段。为此,现有的设计一般会采用两个如图1所示的电路,分别适应上述两个频段。上述方式,造成了移动通信设备的电路的拓扑结构相对复杂,布线面积较大,降低了通信设备的系统集成度。It can be seen from FIG. 2 and FIG. 3 that it is difficult for the circuit 1000 to take into account the frequency band MB: 1.7GHz-2.1GHz and the frequency band HB: 2.3GHz-2.7GHz at the same time. However, the current communication needs often need to take into account the above two frequency bands. For this reason, the existing design generally adopts two circuits as shown in Fig. 1 to adapt to the above two frequency bands respectively. The above method results in a relatively complex topology of the circuit of the mobile communication device and a large wiring area, which reduces the system integration degree of the communication device.
图4示出了本申请的一个实施例射频功率放大电路的拓扑结构示意图。FIG. 4 shows a schematic topology diagram of a radio frequency power amplifier circuit according to an embodiment of the present application.
如图4所示,电路2000可以包括变压器TF和电容模组211、212。As shown in FIG. 4 , the circuit 2000 may include a transformer TF and capacitor modules 211 and 212 .
如图4所示,变压器TF可以包括原边和副边。其中原边可以连接射频输入信号的差分信号。变压器TF的副边可以作为电路2000的输出端。变压器TF的原边绕组包括端PAI1、端PAI2和中间抽头。其中,中间抽头可以与供电电源VCC连接。端PAI1和端PAI2可以分别连接射频差分信号的两端。副边绕组的两端PAO1和PAO2中的至少一个可以作为信号输出端。例如,端PAO2可以用于信号输出端,与天线连接。As shown in FIG. 4, the transformer TF may include a primary side and a secondary side. The primary side can be connected to the differential signal of the radio frequency input signal. The secondary side of the transformer TF can be used as the output terminal of the circuit 2000 . The primary winding of the transformer TF includes a terminal PAI1, a terminal PAI2 and an intermediate tap. Wherein, the middle tap can be connected with the power supply VCC. The terminal PAI1 and the terminal PAI2 can be respectively connected to two ends of the radio frequency differential signal. At least one of the two ends PAO1 and PAO2 of the secondary winding can be used as a signal output end. For example, terminal PAO2 can be used as a signal output terminal and connected to an antenna.
如图4所示,电容模组211和212可以分别连接于变压器TF的副边绕组的两端。比如,电容模组211可以跨接于变压器副边绕组的端PAO1与地之间,电容模组212可以跨接于变压器副边绕组的端PAO2与地之间。As shown in FIG. 4 , the capacitor modules 211 and 212 can be respectively connected to both ends of the secondary winding of the transformer TF. For example, the capacitor module 211 can be connected between the terminal PAO1 of the secondary winding of the transformer and the ground, and the capacitor module 212 can be connected between the terminal PAO2 of the secondary winding of the transformer and the ground.
电容模组211和212可以作为电路2000的选频电容,与变压器TF谐振,共同决定电路2000的工作范围。其中电容模组211和212的电容值可以受控变化。电容模组211的电容值变化范围包括第一电容值和第二电容值。电容模组212的电容值变化范围包括第三电容值和第四电容值。The capacitor modules 211 and 212 can be used as frequency-selective capacitors of the circuit 2000 , resonate with the transformer TF, and jointly determine the working range of the circuit 2000 . The capacitance values of the capacitor modules 211 and 212 can be changed under control. The variation range of the capacitance value of the capacitance module 211 includes a first capacitance value and a second capacitance value. The variation range of the capacitance value of the capacitance module 212 includes a third capacitance value and a fourth capacitance value.
如图4所示,电容模组211可以包括电容器C1和C2。可选地,电容器C1的电容值可以是第一电容值,电容器C2的电容值可以是第二电容值。可选地,电容模组可以包括选择开关分别与电容器C1和电容器C2连接。 可以通过控制该选择开关控制电容器C1和/或电容器C2连接,实现控制电容模组的电容值的目的。可选地,该选择开关可以是分别与电容器C1和电容器C2连接的两个开关,也可以是如示例实施例所示的单刀双掷开关Switch1。As shown in FIG. 4 , the capacitor module 211 may include capacitors C1 and C2 . Optionally, the capacitance value of the capacitor C1 may be the first capacitance value, and the capacitance value of the capacitor C2 may be the second capacitance value. Optionally, the capacitor module may include selection switches connected to the capacitor C1 and the capacitor C2 respectively. The purpose of controlling the capacitance value of the capacitance module can be achieved by controlling the selection switch to control the connection of the capacitor C1 and/or the capacitor C2. Optionally, the selection switch may be two switches respectively connected to the capacitor C1 and the capacitor C2, or may be a single-pole double-throw switch Switch1 as shown in the exemplary embodiment.
如图4所示,电容模组212可以包括电容器C3和C4。可选地,电容器C3的电容值可以是第三电容值,电容器C4的电容值可以是第四电容值。可选地,电容模组可以包括选择开关分别与电容器C3和电容器C4连接。可以通过控制该选择开关控制电容器C3和/或电容器C4连接,实现控制电容模组的电容值的目的。可选地,该选择开关可以是分别与电容器C3和电容器C4连接的两个开关,也可以是如示例实施例所示的单刀双掷开关Switch2。As shown in FIG. 4 , the capacitor module 212 may include capacitors C3 and C4 . Optionally, the capacitance value of the capacitor C3 may be the third capacitance value, and the capacitance value of the capacitor C4 may be the fourth capacitance value. Optionally, the capacitor module may include selection switches connected to the capacitor C3 and the capacitor C4 respectively. The purpose of controlling the capacitance value of the capacitance module can be achieved by controlling the selection switch to control the connection of the capacitor C3 and/or the capacitor C4. Optionally, the selection switch may be two switches respectively connected to the capacitor C3 and the capacitor C4, or may be a single pole double throw switch Switch2 as shown in the exemplary embodiment.
可选地,电路2000的工作频率范围可以包括第一频率和第二频率。其中,当电路2000工作于第一频率附近时,可以控制电容模组211的电容值为第一电容值,控制电容模组212的电容值为第三电容值。当电路2000工作于第二频率附近时,可以控制电容模组211的电容值为第二电容值,控制电容模组212的电容值为第四电容值。可选地,第一频率可以在MB:1.7GHz-2.1GHz范围以内;第二频率可以在HB:2.3GHz-2.7GHz范围以内。可选地,电路2000可以用于5G移动通信。Optionally, the operating frequency range of the circuit 2000 may include the first frequency and the second frequency. Wherein, when the circuit 2000 works near the first frequency, the capacitance value of the capacitance module 211 can be controlled to be the first capacitance value, and the capacitance value of the capacitance module 212 can be controlled to be the third capacitance value. When the circuit 2000 works near the second frequency, the capacitance value of the capacitance module 211 can be controlled to be the second capacitance value, and the capacitance value of the capacitance module 212 can be controlled to be the fourth capacitance value. Optionally, the first frequency may be within the range of MB: 1.7GHz-2.1GHz; the second frequency may be within the range of HB: 2.3GHz-2.7GHz. Optionally, the circuit 2000 can be used for 5G mobile communication.
可选地,电路2000还可以包括功率放大器(未示出)。进一步地地,电路2000可以包括差分功率放大器。该功率放大器的一对差分输出端可以分别连接端PAI1和端PAI2。可选地,电路2000也可以包括用于差分信号处理的两个或者两个以上功率放大器构成的差分电路。其输出端分别与端PAI1和端PAI2连接。Optionally, the circuit 2000 may also include a power amplifier (not shown). Further, the circuit 2000 may include a differential power amplifier. A pair of differential output terminals of the power amplifier can be connected to the terminal PAI1 and the terminal PAI2 respectively. Optionally, the circuit 2000 may also include a differential circuit composed of two or more power amplifiers for differential signal processing. Its output terminals are respectively connected with terminal PAI1 and terminal PAI2.
图5示出了图4所示电路的传输增益曲线示意图。FIG. 5 shows a schematic diagram of the transmission gain curve of the circuit shown in FIG. 4 .
如图5所示,当控制单刀双掷开关Switch1和Switch2使得电容器C1和C3分别与地连接,电容器C2和C4分别与地断开时。电路2000的传输增益曲线可以为图5中的粗线。该曲线可以与图2所示的曲线相似。此时电路2000对频段MB:1.7GHz-2.1GHz范围内信号有着很好的传输特性。As shown in FIG. 5 , when the SPDT switches Switch1 and Switch2 are controlled such that the capacitors C1 and C3 are respectively connected to the ground, and the capacitors C2 and C4 are respectively disconnected from the ground. The transmission gain curve of the circuit 2000 may be a thick line in FIG. 5 . This curve may be similar to the curve shown in FIG. 2 . At this time, the circuit 2000 has good transmission characteristics for signals in the frequency band MB: 1.7GHz-2.1GHz.
如图5所示,当控制单刀双掷开关Switch1和Switch2使得电容器C1和C3分别与地断开,电容器C2和C4分别与地连接时。电路2000的传输 增益曲线可以为图5中的细线。该曲线可以与图3所示的曲线相似。此时电路2000对频段HB:2.3GHz-2.7GHz范围内信号有着很好的传输特性。As shown in FIG. 5 , when the SPDT switches Switch1 and Switch2 are controlled so that the capacitors C1 and C3 are respectively disconnected from the ground, and the capacitors C2 and C4 are respectively connected to the ground. The transmission gain curve of circuit 2000 may be the thin line in FIG. 5 . This curve may be similar to the curve shown in FIG. 3 . At this time, the circuit 2000 has good transmission characteristics for signals in the frequency band HB: 2.3GHz-2.7GHz.
通过上述方式,可以利用电路2000同时兼顾频段MB:1.7GHz-2.1GHz和频段HB:2.3GHz-2.7GHz。从而可以降低移动通信设备的电路拓扑结构的复杂度,缩小布线面积,提高通信设备的系统集成度。Through the above method, the circuit 2000 can simultaneously take into account the frequency band MB: 1.7GHz-2.1GHz and the frequency band HB: 2.3GHz-2.7GHz. Therefore, the complexity of the circuit topology of the mobile communication device can be reduced, the wiring area can be reduced, and the system integration degree of the communication device can be improved.
本申请还提供一个实施例发射模组。该发射模组包括前述任意一种射频功率放大电路。可选地,该发射模组可以用于5G移动通信。The present application also provides an embodiment of a launch module. The transmitting module includes any radio frequency power amplifier circuit mentioned above. Optionally, the transmitting module can be used for 5G mobile communication.
本申请还提供一个实施例通信设备。该通信设备包括前述任意一种射频功率放大电路,或者前述任意一种发射模组。可选地,该通信设备可以是便携式移动通信设备。例如手机、笔记本电脑或者平板以及可以接入移动通信网络的其他便携设备。可选地,该通信设备可以是5G移动通信设备。The present application also provides a communication device according to an embodiment. The communication device includes any one of the aforementioned radio frequency power amplification circuits, or any one of the aforementioned transmitting modules. Optionally, the communication device may be a portable mobile communication device. For example, mobile phones, laptops or tablets, and other portable devices that can access mobile communication networks. Optionally, the communication device may be a 5G mobile communication device.
本申请还提供一个实施例通信系统。该通信系统包括前述任意一种射频功率放大电路,或者前述任意一种发射模组。该通信系统可以包括至少一个前述通信设备。可选地,该通信系统可以利用5G通信协议通信。The present application also provides an embodiment communication system. The communication system includes any of the aforementioned radio frequency power amplifier circuits, or any of the aforementioned transmitting modules. The communication system may comprise at least one of the aforementioned communication devices. Optionally, the communication system may communicate using a 5G communication protocol.
利用上述射频功率放大电路、发射模组、通信设备和通信系统。可以通过在变压器的次级线圈上连接容值可变的电容模组。并可以在射频功率放大电路工作于不同频率范围时,可以控制电容模组的容值与工作频率匹配。使得该射频功率放大电路可以适应不同的工作频率。从可以不必为不同工作频率配置多个射频功率放大电路。进而可以简化射频功率放大电路的拓扑结构,缩小射频功率放大电路的体积,提高设备的集成度。降低射频功率放大电路的生产成本。Utilize the radio frequency power amplifying circuit, transmitting module, communication equipment and communication system. It can be achieved by connecting a capacitor module with variable capacitance on the secondary coil of the transformer. And when the radio frequency power amplifying circuit works in different frequency ranges, it can control the capacitance of the capacitor module to match the working frequency. This makes the radio frequency power amplifier circuit adaptable to different operating frequencies. Therefore, it is not necessary to configure multiple radio frequency power amplifier circuits for different operating frequencies. Furthermore, the topological structure of the radio frequency power amplifying circuit can be simplified, the volume of the radio frequency power amplifying circuit can be reduced, and the integration degree of the equipment can be improved. The production cost of the radio frequency power amplifier circuit is reduced.
以上对本申请实施例进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明仅用于帮助理解本申请的方法及其核心思想。同时,本领域技术人员依据本申请的思想,基于本申请的具体实施方式及应用范围上做出的改变或变形之处,都属于本申请保护的范围。综上所述,本说明书内容不应理解为对本申请的限制。The above is a detailed introduction to the embodiments of the present application. In this paper, specific examples are used to illustrate the principles and implementation methods of the present application. The descriptions of the above embodiments are only used to help understand the methods and core ideas of the present application. At the same time, changes or deformations made by those skilled in the art based on the ideas of the application, specific implementation methods and application scopes of the application all belong to the scope of protection of the application. To sum up, the contents of this specification should not be understood as limiting the application.
Claims (10)
- 一种射频功率放大电路,其特征在于,包括:A radio frequency power amplifier circuit, characterized in that it comprises:变压器,transformer,所述变压器的原边包括第一功放端、第二功放端和中间抽头,所述中间抽头与电源连接,The primary side of the transformer includes a first power amplifier terminal, a second power amplifier terminal and an intermediate tap, the intermediate tap is connected to a power supply,所述变压器的副边包括功率输出端和参考端;The secondary side of the transformer includes a power output terminal and a reference terminal;第一电容模组,跨接于所述参考端和地之间,所述第一电容模组的电容变化范围包括第一电容值和第二电容值;The first capacitance module is connected between the reference terminal and the ground, and the capacitance variation range of the first capacitance module includes a first capacitance value and a second capacitance value;第二电容模组,跨接于所述功率输出端和地之间,所述第二电容模组的电容变化范围包括第三电容值和第四电容值。The second capacitor module is connected between the power output terminal and the ground, and the capacitance variation range of the second capacitor module includes a third capacitance value and a fourth capacitance value.
- 根据权利要求1所述的电路,其特征在于,The circuit of claim 1, wherein所述第一电容模组包括:The first capacitor module includes:第一电容器,电容值为所述第一电容值;a first capacitor, the capacitance value of which is the first capacitance value;第二电容器,电容值为所述第二电容值;a second capacitor, the capacitance value of which is the second capacitance value;所述第二电容模组包括:The second capacitor module includes:第三电容器,电容值为所述第三电容值;a third capacitor, the capacitance value of which is the third capacitance value;第四电容器,电容值为所述第四电容值。The fourth capacitor has a capacitance value of the fourth capacitance value.
- 根据权利要求2所述的电路,其特征在于,还包括:The circuit according to claim 2, further comprising:第一选择开关,与所述第一电容器和所述第二电容器连接;a first selection switch connected to the first capacitor and the second capacitor;第二选择开关,与所述第三电容器和所述第四电容器连接。A second selection switch connected to the third capacitor and the fourth capacitor.
- 根据权利要求3所述的电路,其特征在于,还包括:The circuit according to claim 3, further comprising:第一功率放大器,与所述第一功放端连接;a first power amplifier connected to the first power amplifier terminal;第二功率放大器,与所述第二功放端连接。The second power amplifier is connected to the second power amplifier terminal.
- 根据权利要求1所述的电路,其特征在于,The circuit of claim 1, wherein所述电路工作于第一频率下时,控制第一电容模组的电容值为第一电容值,控制第二电容模组的电容值为第三电容值;When the circuit works at the first frequency, the capacitance value of the first capacitance module is controlled to be the first capacitance value, and the capacitance value of the second capacitance module is controlled to be the third capacitance value;所述电路工作于第二频率下时,控制第一电容模组的电容值为第二电容值,控制第二电容模组的电容值为第四电容值。When the circuit works at the second frequency, the capacitance value of the first capacitance module is controlled to be the second capacitance value, and the capacitance value of the second capacitance module is controlled to be the fourth capacitance value.
- 根据权利要求5所述的电路,其特征在于,The circuit of claim 5, wherein所述第一频率在1.7GHz-2.1GHz范围以内;The first frequency is within the range of 1.7GHz-2.1GHz;所述第二频率在2.3GHz-2.7GHz范围以内。The second frequency is within the range of 2.3GHz-2.7GHz.
- 根据权利要求1所述的电路,其特征在于,所述电路用于5G通信。The circuit according to claim 1, wherein the circuit is used for 5G communication.
- 一种发射模组,其特征在于,包括权利要求1-7中任意一项所述的电路。A transmitting module, characterized in that it comprises the circuit described in any one of claims 1-7.
- 一种通信设备,其特征在于,包括权利要求1-7中任意一项所述的电路,或者权利要求8所述的发射模组。A communication device, characterized by comprising the circuit according to any one of claims 1-7, or the transmitting module according to claim 8.
- 一种通信系统,其特征在于,包括权利要求1-7中任意一项所述的电路,或者权利要求8所述的发射模组。A communication system, characterized by comprising the circuit according to any one of claims 1-7, or the transmitting module according to claim 8.
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CN215818097U (en) * | 2021-08-17 | 2022-02-11 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifying circuit, transmitting module, communication equipment and communication system |
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