WO2023001992A4 - Method for obtaining a nanostructured layer of titanium nitride by cathode sputtering deposition - Google Patents
Method for obtaining a nanostructured layer of titanium nitride by cathode sputtering deposition Download PDFInfo
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- WO2023001992A4 WO2023001992A4 PCT/EP2022/070562 EP2022070562W WO2023001992A4 WO 2023001992 A4 WO2023001992 A4 WO 2023001992A4 EP 2022070562 W EP2022070562 W EP 2022070562W WO 2023001992 A4 WO2023001992 A4 WO 2023001992A4
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- WIPO (PCT)
- Prior art keywords
- monolayer
- titanium nitride
- substrate
- nanostructured
- thin
- Prior art date
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract 23
- 238000000034 method Methods 0.000 title claims abstract 19
- 238000000151 deposition Methods 0.000 title claims abstract 5
- 238000004544 sputter deposition Methods 0.000 title claims abstract 5
- 230000008021 deposition Effects 0.000 title claims abstract 4
- 239000002356 single layer Substances 0.000 claims abstract 25
- 239000000758 substrate Substances 0.000 claims abstract 18
- 239000010410 layer Substances 0.000 claims abstract 13
- 239000007789 gas Substances 0.000 claims abstract 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 8
- 239000011261 inert gas Substances 0.000 claims abstract 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract 7
- 238000001039 wet etching Methods 0.000 claims abstract 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 12
- 238000004040 coloring Methods 0.000 claims 5
- 230000004048 modification Effects 0.000 claims 5
- 238000012986 modification Methods 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 239000010432 diamond Substances 0.000 claims 3
- 229910003460 diamond Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 238000005546 reactive sputtering Methods 0.000 claims 2
- 238000002310 reflectometry Methods 0.000 claims 2
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 claims 1
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000003814 drug Substances 0.000 claims 1
- 230000005518 electrochemistry Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000002070 nanowire Substances 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
Abstract
The invention relates to a method for obtaining a nanostructured layer of titanium nitride by deposition by cathode sputtering of a substrate at ambient temperature, characterised in that it comprises: - a first step of reactive cathode sputtering at ambient temperature in a vacuum chamber comprising a reactive gas, an inert gas, the substrate with a diameter of 100 mm or more, and a target cathode, under specific conditions; - a second step of wet etching of the monolayer of titanium nitride deposited during the first step, the wet etching comprising the application of a solution, in order to obtain a thin monolayer of titanium nitride, TiN, having controlled black coloration, the reactive cathode sputtering being carried out during the first step using a discharge provided by a direct current generator, the reactive gas being composed of nitrogen, with a predetermined flow rate of inert gas and of reactive gas entering the chamber, a predetermined ratio of inert gas and of reactive gas, a predetermined pressure in the chamber and a predetermined power of the direct current generator. Varying these parameters or not adhering to the ratio no longer provides the nanostructuring obtained in step 2.
Claims
1 . Procédé de réalisation d’au moins une monocouche mince de nitrure de titane Ti N nanostructurée sur un substrat, à température ambiante, le procédé comprenant : 1 . Process for producing at least one thin monolayer of nanostructured Ti N titanium nitride on a substrate, at room temperature, the process comprising:
- une première étape de pulvérisation cathodique réactive sur le substrat à température ambiante dans une enceinte sous vide comprenant une cathode cible en titane, un gaz réactif composé uniquement d’azote, et un gaz inerte, suivant des conditions déterminées; - a first step of reactive sputtering on the substrate at room temperature in a vacuum chamber comprising a titanium target cathode, a reactive gas composed solely of nitrogen, and an inert gas, according to determined conditions;
- une deuxième étape de modification de la monocouche de nitrure de titane TiN déposée lors de la première étape sur le substrat, dans son épaisseur, par gravure par voie humide, cette modification par voie humide créant la modification de la rugosité de l’ensemble de la surface de la monocouche de nitrure de titane TiN et une nanostructuration dans l’épaisseur de la monocouche de nitrure de titane Ti N , la modification de la monocouche de nitrure de titane Ti N par voie humide comprenant l’application d’une solution à base de peroxyde d’hydrogène, afin d’obtenir une monocouche mince de nitrure de titane Ti N de coloration de type noire liée à la nano-structuration dans la couche mince de nitrure de titane Ti N ; la pulvérisation cathodique réactive est effectuée lors de la première étape : - a second step of modifying the monolayer of titanium nitride TiN deposited during the first step on the substrate, in its thickness, by wet etching, this wet modification creating the modification of the roughness of the whole of the surface of the monolayer of titanium nitride TiN and a nanostructuring in the thickness of the monolayer of titanium nitride Ti N , the modification of the monolayer of titanium nitride Ti N by wet process comprising the application of a solution to hydrogen peroxide base, in order to obtain a thin monolayer of titanium nitride Ti N with a black-type coloring linked to the nano-structuring in the thin layer of titanium nitride Ti N; reactive sputtering is performed in the first step:
• avec une décharge fournie déterminée par un générateur de courant continu , le gaz réactif étant composé d’azote, • with a discharge provided determined by a direct current generator, the reactive gas being composed of nitrogen,
• avec un débit déterminé de gaz inerte et de gaz réactif entrant dans l’enceinte, un ratio déterminé de gaz inerte et de gaz réactif, une pression déterminée dans l’encei nte et une puissance déterminée du générateur de courant continu , • with a determined flow rate of inert gas and reactive gas entering the enclosure, a determined ratio of inert gas and reactive gas, a determined pressure in the enclosure and a determined power of the direct current generator,
• le ratio déterminé de gaz inerte et de gaz réactif composé d ’azote au sein de l’enceinte lors de la première étape étant compris entre 0.4 et 1 .8, ces conditions spécifiq ues de dépôt favorisant la nanostructuration par gravure humide, afin d’obtenir lors de la deuxième étape, la nano-structuration permettant • the determined ratio of inert gas and reactive gas composed of nitrogen within the enclosure during the first stage being between 0.4 and 1.8, these specific deposition conditions favoring nanostructuring by wet etching, in order to to obtain during the second step, the nano-structuring allowing
FEUILLE MODIFIEE (ARTICLE 19)
33 la coloration contrôlée de type noire , coloration d ifférente de la coloration obtenue lors de la première étape, cette deuxième étape permettant un enlèvement partiel de matière de la monocouche Ti N sur l’ensemble de la surface de la monocouche dans une partie ou toute l’épaisseur de la monocouche Ti N , en fonction du temps de gravure chimique, de l’épaisseur de la monocouche et des conditions spécifiq ues déterminées lors de la première étape, la monocouche mince de nitrure de titane nanostructurée TiN dans son épaisseur et obtenue lors de la deuxième étape présentant des reliefs de quelques dizaines à quelques centaines de nanomètres . AMENDED SHEET (ARTICLE 19) 33 controlled coloring of the black type, coloring different from the coloring obtained during the first step, this second step allowing partial removal of material from the Ti N monolayer over the entire surface of the monolayer in part or all the thickness of the Ti N monolayer, as a function of the chemical etching time, of the thickness of the monolayer and of the specific conditions determined during the first step, the thin monolayer of titanium nitride nanostructured TiN in its thickness and obtained during the second stage presenting reliefs of a few tens to a few hundreds of nanometers.
2. Procédé selon la revendication 1 , caractérisé en ce que lors de la deuxième étape de gravure humide de la couche de nitrure de titane, la solution à base de peroxyde d’hydrogène est appliquée pendant un temps compris entre 10 secondes et 20 minutes, et en ce que la couche mince de nitrure de titane nanostructurée Ti N par gravure humide présente des nano-fils verticaux. 2. Method according to claim 1, characterized in that during the second wet etching step of the titanium nitride layer, the hydrogen peroxide-based solution is applied for a time of between 10 seconds and 20 minutes, and in that the thin layer of titanium nitride nanostructured Ti N by wet etching has vertical nanowires.
3. Procédé selon l’une des revendications 1 à 2 , caractérisé en ce que la deuxième étape de modification de la monocouche par voie humide est réalisée à pH entre 7 et 9, la solution à base de peroxyde d’hydrogène étant obtenue par mélange de peroxyde d’hydrogène avec un produit nommé TBR 19® , la solution présentant une concentration en peroxyde d’hydrogène comprise entre 20% et 40% , en plus particu lièrement comprise entre 25% et 35% , de préférence égale à 30% . 3. Method according to one of claims 1 to 2, characterized in that the second step of modifying the monolayer by a wet process is carried out at pH between 7 and 9, the solution based on hydrogen peroxide being obtained by mixing of hydrogen peroxide with a product called TBR 19®, the solution having a hydrogen peroxide concentration of between 20% and 40%, more particularly between 25% and 35%, preferably equal to 30%.
4. Procédé selon la revendication 3, caractérisé en ce que les proportions suivantes sont employées : 90 à 100 grammes H2O2 + 6 à 10 grammes TBR 19®, la solution obtenue étant chauffée entre 30°C et 60°C pour l’étape de modification de la monocouche par voie humide. 4. Method according to claim 3, characterized in that the following proportions are used: 90 to 100 grams H 2 O 2 + 6 to 10 grams TBR 19®, the solution obtained being heated between 30°C and 60°C for the wet monolayer modification step.
5. Procédé selon l’une des revendications 1 à 4, caractérisé en ce que la monocouche mince de nitrure de titane nanostructurée TiN présente une réflectivité inférieure à 25% pour des longueurs d’ondes comprises entre 100 nm 5. Method according to one of claims 1 to 4, characterized in that the thin monolayer of nanostructured titanium nitride TiN has a reflectivity of less than 25% for wavelengths between 100 nm
FEUILLE MODIFIEE (ARTICLE 19)
et 900 nm de préférence inférieure à 18% , et encore plus préférentiellement inférieure à 8%. AMENDED SHEET (ARTICLE 19) and 900 nm preferably less than 18%, and even more preferably less than 8%.
6. Procédé selon l’une des revendications 1 à 5, caractérisé en ce que la pression déterminée au sein de l’enceinte lors de la première étape est comprise entre 0, 0034 mbar et 1 mbar, et le débit déterminé entrant dans l’enceinte lors de la première étape est compris entre 10 sccm et 52 sccm pour le gaz inerte ; et est compris entre 6 sccm et 30 sccm pour le gaz réactif et la puissance déterminée du générateur de courant continu est comprise entre 200 W et 800 W. 6. Method according to one of claims 1 to 5, characterized in that the pressure determined within the enclosure during the first step is between 0.0034 mbar and 1 mbar, and the determined flow rate entering the enclosure during the first stage is between 10 sccm and 52 sccm for the inert gas; and is between 6 sccm and 30 sccm for the reactive gas and the determined power of the direct current generator is between 200 W and 800 W.
7. Procédé selon l’une des revendications 1 à 6, caractérisé en ce que lors de la deuxième étape de modification par voie humide de la monocouche de n itrure de titane, la solution à base de peroxyde d’hydrogène est appliquée à une température i nférieure à 70°C. 7. Method according to one of claims 1 to 6, characterized in that during the second step of wet modification of the monolayer of titanium n itride, the solution based on hydrogen peroxide is applied at a temperature below 70°C.
8. Procédé selon l’une des revendications 1 à 7, caractérisé en ce q ue le substrat est souple et comprend par exemple un matériau polymère ou le substrat est choisi parmi le g roupe comprenant : le silicium , le diamant, les verres, les métaux, les isolants, un substrat ou couche compatible CMOS et autres types de substrats supportant le dépôt par pulvérisation cathodique, et en ce que la surface de la monocouche de TiN nanostructurée présente des dimensions caractéristiques ou diamètres, su périeures ou égales à 100mm . 8. Method according to one of claims 1 to 7, characterized in that the substrate is flexible and comprises for example a polymer material or the substrate is chosen from the group comprising: silicon, diamond, glasses, metals, insulators, a CMOS-compatible substrate or layer and other types of substrate supporting cathodic sputtering deposition, and in that the surface of the nanostructured TiN monolayer has characteristic dimensions or diameters greater than or equal to 100 mm.
9. Procédé selon l’une des revendications 1 à 8, caractérisé en ce qu’il comprend une étape de lithographie permettant la définition de structure en TiN , avant l’étape de modification de l a monocouche par voie humide. 9. Method according to one of claims 1 to 8, characterized in that it comprises a lithography step allowing the definition of the TiN structure, before the step of modifying the monolayer by wet process.
10. Procédé selon l’une des revendications 1 à 9, caractérisé en ce que la monocouche mince de nitrure de titane nanostructurée présente une épaisseur comprise entre 300 nm et 7 microns. 10. Method according to one of claims 1 to 9, characterized in that the thin monolayer of nanostructured titanium nitride has a thickness of between 300 nm and 7 microns.
1 1 . Procédé selon l’une des revendications 1 à 10, caractérisé en ce que le procédé comprend en outre une étape de dépôt de matériau sur la monocouche mince de nitrure de titane Ti N nanostructurée obtenue à la deuxième étape , 1 1 . Process according to one of Claims 1 to 10, characterized in that the process further comprises a step of depositing material on the thin monolayer of nanostructured Ti N titanium nitride obtained in the second step,
FEUILLE MODIFIEE (ARTICLE 19)
avantageusement le matériau déposé sur la monocouche est une couche mince de diamant. AMENDED SHEET (ARTICLE 19) advantageously the material deposited on the monolayer is a thin layer of diamond.
12. Substrat obtenu par un procédé selon l’une quelconque des revendications 1 à 1 1 , le substrat comprenant à sa surface au moins une monocouche mince nanostructurée de nitrure de titane Ti N de coloration de type noire, présentant une rugosité de surface et une nano-structuration dans l’épaisseur de la monocouche, la couche mince de nitrure de titane nanostructurée Ti N dans son épaisseur présentant des reliefs de quelques dizaines à quelques centaines de nanomètres, caractérisé en ce que le substrat est souple et est en polymère . 12. Substrate obtained by a method according to any one of claims 1 to 1 1, the substrate comprising on its surface at least one nanostructured thin monolayer of titanium nitride Ti N of black type coloring, having a surface roughness and a nano-structuring in the thickness of the monolayer, the thin layer of nanostructured titanium nitride Ti N in its thickness having reliefs of a few tens to a few hundreds of nanometers, characterized in that the substrate is flexible and is made of polymer.
13. Substrat selon la revendication 12, caractérisé en ce q ue la couche mince de nitrure de titane nanostructurée présente une épaisseur comprise entre 300 nm et 7 microns. 13. Substrate according to claim 12, characterized in that the thin layer of nanostructured titanium nitride has a thickness of between 300 nm and 7 microns.
14. Substrat selon l’une des revendications 12 à 13, caractérisé en ce que la couche mince de nitrure de titane Ti N nanostructurée présente des atomes de titane et d’azote sans traces d’atomes d’oxygène. 14. Substrate according to one of claims 12 to 13, characterized in that the thin layer of nanostructured titanium nitride Ti N has titanium and nitrogen atoms without traces of oxygen atoms.
15. Substrat selon l’une des revendications 12 à 14, caractérisé en ce que la réflectivité de la couche mince de nitrure de titane nanostructurée Ti N est inférieure à 25% pour une longueur d’onde comprise entre 100 n m et 900 nm , de préférence inférieure à 18%, et de préférence inférieure à 10% et encore plus préférentiellement inférieure à 8% ou la couche mince de nitrure de titane nanostructurée Ti N présente une résistivité comprise entre 0, 508 pQ.cm et 9, 14 pQ.cm. 15. Substrate according to one of claims 12 to 14, characterized in that the reflectivity of the thin layer of nanostructured titanium nitride Ti N is less than 25% for a wavelength of between 100 nm and 900 nm, of preferably less than 18%, and preferably less than 10% and even more preferably less than 8% or the thin layer of nanostructured titanium nitride Ti N has a resistivity of between 0.508 pQ.cm and 9.14 pQ.cm .
16. Substrat selon l’une des revendications 12 à 15, caractérisé en ce que le substrat présente sur, à côté ou en-dessous de la monocouche mince de nitrure de titane TiN nanostructurée , au moins une autre couche d’un autre matériau , par exemple une couche mince de diamant. 16. Substrate according to one of claims 12 to 15, characterized in that the substrate has on, next to or below the thin monolayer of nanostructured TiN titanium nitride, at least one other layer of another material, for example a thin layer of diamond.
FEUILLE MODIFIEE (ARTICLE 19)
36 AMENDED SHEET (ARTICLE 19) 36
17. Utilisation d’un substrat selon l’une q uelconque des revendications 12 à 16, pour l’optiq ue, la photonique, l’électroniq ue, l’électrochimie, la joaillerie, l’horlogerie, le médical. 17. Use of a substrate according to any one of claims 12 to 16, for optics, photonics, electronics, electrochemistry, jewelry, watchmaking, medicine.
FEUILLE MODIFIEE (ARTICLE 19)
AMENDED SHEET (ARTICLE 19)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FRFR2107890 | 2021-07-21 | ||
| FR2107890A FR3125539A1 (en) | 2021-07-21 | 2021-07-21 | Process for depositing thin layers of titanium nitride by reactive sputtering and its associated nanostructuring |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2023001992A1 WO2023001992A1 (en) | 2023-01-26 |
| WO2023001992A4 true WO2023001992A4 (en) | 2023-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2022/070562 WO2023001992A1 (en) | 2021-07-21 | 2022-07-21 | Method for obtaining a nanostructured layer of titanium nitride by cathode sputtering deposition |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR3125539A1 (en) |
| WO (1) | WO2023001992A1 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8888965B2 (en) | 2007-11-30 | 2014-11-18 | Anna University—Chennai | Non-stoichiometric titanium nitride films |
| JP2009258357A (en) * | 2008-04-16 | 2009-11-05 | Geomatec Co Ltd | Substrate for photomask, photomask, and method of manufacturing the same |
| TWI727025B (en) * | 2016-03-29 | 2021-05-11 | 法商法國技術公司 | Solution and method for etching titanium based materials |
| US20190161847A1 (en) * | 2017-11-29 | 2019-05-30 | Georgia Tech Research Corporation | Methods to impart color and durable properties to substrates |
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2021
- 2021-07-21 FR FR2107890A patent/FR3125539A1/en active Pending
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| Publication number | Publication date |
|---|---|
| WO2023001992A1 (en) | 2023-01-26 |
| FR3125539A1 (en) | 2023-01-27 |
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