WO2023001856A1 - Resistor, in particular thick-film resistor - Google Patents

Resistor, in particular thick-film resistor Download PDF

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Publication number
WO2023001856A1
WO2023001856A1 PCT/EP2022/070269 EP2022070269W WO2023001856A1 WO 2023001856 A1 WO2023001856 A1 WO 2023001856A1 EP 2022070269 W EP2022070269 W EP 2022070269W WO 2023001856 A1 WO2023001856 A1 WO 2023001856A1
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Prior art keywords
resistor
resistance element
voltage system
resistance
ppm
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PCT/EP2022/070269
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German (de)
French (fr)
Inventor
Josef Praschk
Patrick REISNER
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Ebg Elektronische Bauelemente Gmbh
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Publication of WO2023001856A1 publication Critical patent/WO2023001856A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites

Definitions

  • Resistor especially thick film resistor
  • the invention relates to a resistor, in particular a thick-film resistor, in particular for a high-voltage system in a motor vehicle, with a nominal power of at least 10 watts, with at least two electrical resistance connections, with a ceramic substrate and with a resistance element electrically provided between the two resistance connections and consisting of a Ceramic substrate applied thick film material, wherein the resistance element has a temperature coefficient.
  • a load circuit of a high-voltage system of a motor vehicle must be discharged quickly when a high-voltage battery of the high-voltage system is disconnected from the load circuit (cf. EP2561372B1).
  • a high-voltage system has a discharge circuit with a resistor or discharge resistor.
  • resistors with a resistance element made of a thick-film material take on a high rated power of at least 10 watts at a low temperature coefficient in the standard range of ⁇ 100 ppm/K.
  • the invention has therefore set itself the task of changing a resistor of the type described in such a way that this despite a high rated power Simplification of circuitry effort can contribute to monitoring.
  • the invention solves the problem set by the features of claim 1.
  • the resistance according to the invention can also be used for measuring data acquisition, for example temperature measurement.
  • the specified temperature coefficient > 700 ppm/K makes it possible to acquire sufficiently precise measurement data, for example with reference to the discharge, which means that a circuit or a high-voltage system can also be reliably monitored. This is all the better if the temperature coefficient is >1000 ppm/K, for example >1000 ppm/K. Elaborate additional circuitry measures to monitor the discharge of the load circuit are therefore no longer necessary - which means that the design of the discharge circuit can be significantly simplified.
  • the temperature coefficient at the resistor according to the invention which is higher than that of known discharge resistors, is only of secondary importance in the event of a discharge, because the discharge from the discharge circuit is usually limited to the rated power of the resistor (power that the resistor can absorb in continuous operation without damage). is limited and / or kept constant, for example using a PWM-controlled discharge.
  • the temperature coefficient (TCR) is preferably in the range from 1000 to 2500 ppm/K in order to increase the resolution of measurement data acquisition at the resistor.
  • the temperature coefficient (TCR) is in the range of 1500 to 2000 ppm/K, which can be sufficient for discharge monitoring. It is also conceivable that the temperature coefficient (TCR) is in the range from 1200 to 1800 ppm/K.
  • the resistor can further shorten the discharge time by having the power rating in the range of 25-2500 watts.
  • the resistor has the Rated power at a temperature at the resistance body of greater than or equal to 25 ° C, for example greater than or equal to 85 ° C on.
  • the resistor has a power rating of at least 10, 25, 50, 100, 15, 250, 350, 500, 600, 800, 1000, 2000, 2500 or 5000 watts.
  • the resistor preferably has a rated power of at most 2500, in particular at most 600 watts.
  • the nominal resistance is in the range from 25 to 2500 watts, in particular from 25 to 600 watts.
  • the resistor can have the rated power, for example, at a temperature of 85 °C or 125 °C at its resistor body.
  • the resistance can be distinguished if it has a nominal voltage of > 30 volts.
  • the nominal voltage can also be >60 volts or >300 volts.
  • the resistor can therefore be particularly suitable as a discharge resistor in high-voltage vehicles.
  • the resistor can have a nominal resistance in the range from 1 to 10,000 ohms.
  • a nominal resistance of 20 to 5000 ohms can be preferred for discharging high-voltage systems for motor vehicles.
  • resistor is used as a load resistor, a nominal resistance of 1 to 200 ohms is conceivable, for example also from 10 to 100 ohms.
  • the resistor is used as a measuring resistor, for example for a sensor application, a nominal resistance of 100 to 10,000 ohms is conceivable.
  • the rated power across the resistor can be further improved if the resistor element has a layer thickness of at least 5 ⁇ m.
  • the layer thickness is preferably in the range from 10 ⁇ m to 35 ⁇ m in order to also be able to discharge load circuits sufficiently quickly in an 800 volt high-voltage system.
  • the resistance element is preferably sintered onto the ceramic substrate in order to further increase the stability of the resistance with regard to its rated power.
  • the comparatively high temperature coefficient of the resistor can be guaranteed if the resistance element contains at least one oxide containing Ru (ruthenium) and/or Bi (bismuth) as the electrically conductive material.
  • This oxide can be Pb2Ru2O6.5 and/or B12RU2O7, etc., for example.
  • the ratio of mass percent Ru to mass percent Bi (i.e. - ) in the electrically conductive material is preferably in the range
  • the resistance element in the composition has components from the group Ca, Al, Cu, individually or in combination.
  • these components which are added as oxides, for example, can react with the electrically insulating glass composition, for example glass frits, of the resistance paste when it is baked on. They can have a “doping” effect on the electrical properties of the resistance element.
  • Cu oxide e.g. CuO
  • the resistance decreases, but the TCR increases in the positive direction.
  • Ca oxide and/or Al oxide is added to the resistor paste, although it can be assumed that it will have a minor effect.
  • composition of the resistance element can still contain unavoidable impurities caused by production, for example a maximum of 0.05 m% individually and a maximum of 0.15 m% overall.
  • the resistance element preferably has Cu in the range from 0.3 to 10 m% (mass percent) in order to be able to influence the resistance value and/or the value of the temperature coefficient in particular.
  • the risk of an electrical overload in the discharge circuit can be reduced by the resistance if the resistance element has a positive temperature coefficient and thus the discharge power is limited by a higher resistance at higher temperatures.
  • the ceramic substrate is preferably Al2O3 or AlN or S13N4.
  • the thick film material can be cermet or made from a Ru-based resistor paste.
  • the resistor according to the invention is preferably used in a discharge circuit of a high-voltage system with a high-voltage battery.
  • a high-voltage system with a high-voltage battery for example, a 400-volt high-voltage system or an 800-volt high-voltage system of a motor vehicle is conceivable.
  • the high-voltage system has a measuring device that includes the resistance element of the resistor as a temperature-dependent resistor as the measured variable pick-up, the outlay on circuitry in the discharge circuit for monitoring the discharge can be further reduced.
  • the above can be further improved if the measuring device is connected to the measured variable pick-up via the resistance terminals of the resistor.
  • the high-voltage system with the resistor according to the invention is preferably used in a motor vehicle.
  • the resistor according to the invention not only stands out as a load resistor, but also as a measured variable pick-up. This is particularly the case when such a resistor according to the invention is used in a discharge circuit of a high-voltage system of a motor vehicle—in order to contribute to a comparatively high level of structural simplification.
  • the resistance can be used as a load resistance, for example Discharge and/or for current limitation and/or as a measured variable pickup, for example for temperature measurement and/or for status monitoring, for example of the high-voltage system or the resistance.
  • FIG. 2 is an enlarged view of the internal structure of a resistance element of the resistor of FIGS. 1 and 2.
  • FIG. 3 shows a schematic circuit for a high-voltage system with the resistor according to FIG.
  • a resistor used as a discharge resistor 1 is shown for a high-voltage system 2 of a motor vehicle shown in FIG. 3.
  • the resistor 1 has a rated power of at least 10 watts, which rated power the resistor 1 can absorb in continuous operation without damage.
  • the resistor 1 has this nominal power of at least 10 watts at 85° C. at its resistor body 20, namely at its bottom (“bottom case”).
  • the electrical resistance of the resistor 1 results essentially from its resistance element 3 made from a thick-film material 4 (or often also called thick-film paste or thick-film paste) from a Ru-based resistance paste, which thick-film material is applied to an Al2O3 ceramic substrate 5 and sintered onto - as can be seen in detail in FIG.
  • the resistance element 3 can absorb the rated power.
  • the conductive phases 9 of the resistance element 3 are embedded in a glass matrix which has been melted and solidified like the glass matrix and has a composition tailored to the conductive phase.
  • cermet metal-ceramic composite material
  • Metal contacts 6a, 6b are provided on the resistance element 3, on which T-shaped or L-shaped contact elements 7a, 7b (not shown) are placed and soldered.
  • the contact elements 7a, 7b form the resistance terminals 8a, 8b of the resistor 1 on the resistor body 20.
  • FIG. The resistance element 3 is thus electrically located between these resistance connections 8a, 8b of the resistor 1.
  • the resistance element 3 is provided in the, for example, metallic, resistor body 20, for example encapsulated with the aid of casting compound 21.
  • the resistor connections 8a, 8b are located on the outside of the resistor body 20.
  • the resistance element 3 has a comparatively high temperature coefficient (TCR) >700 ppm/K at a reference temperature of 25° C., measured according to the standard DIN EN 60115-1.
  • the resistor 1 can thus be used for temperature measurement because this resistor has a sufficiently high change in resistance as a function of its temperature.
  • the temperature coefficient (TCR) can be >1000 ppm/K, for example also in the range from 1000 to 2500 ppm/K, preferably in the range from 1500 to 2000 ppm/K.
  • the resistance element 3 has a positive temperature coefficient (TCR) of 1800 ppm/K (10 6 /Kelvin), e.g. B. measured according to the standard DIN EN 60115-1.
  • the resistance element 3 has a layer thickness s of at least 5 ⁇ m, in particular from 10 ⁇ m to 35 ⁇ m, namely 12 ⁇ m.
  • the electrically conductive material 9 in the resistance element 3 is formed by electrically conductive oxides containing Ru (ruthenium) and Bi (bismuth), for example Pb2Ru206.5 and/or B12RU2O7, etc.
  • the oxides in the resistance element 3 are preferably essentially ruthenium compounds.
  • the conductive material 9 thus has a ruthenium base. Furthermore, in the electrically conductive material 9 is the ratio
  • compositions can also contain Ca (calcium) and/or Al (aluminum) and/or Cu (copper).
  • the composition of the resistance element 3 also has Cu in the range from 0.3 to 10 m% and unavoidable manufacturing-related contaminations individually at most 0.05 m% and at most 0.15 m% in total.
  • the resistance element 3 also has an electrically insulating glass composition 10, including Pb-Al silicate and / or Ca-Al silicate on.
  • a high-voltage battery 11 with a voltage of 800V belongs to the high-voltage system 2 .
  • a discharge circuit 12 is provided on the high-voltage system 2, which discharges the load circuit 13 with a capacitance 14 and a DC-AC converter 15 for an electrical machine, not shown in detail, when the high-voltage battery 11 is disconnected from the load circuit 13 via the switches 16a, 16b will.
  • a controller 17 and a switching means 18 for opening and closing the discharge circuit 12 are assigned to the discharge circuit 12 .
  • the controller 17 can thus ensure an essentially constant discharge power Pw at the resistor 1 by the switching means 18 being opened and closed in a clocked manner using pulse width modulation (PWM).
  • PWM pulse width modulation
  • the resistor 1 has a nominal voltage of >30 volts, namely 800 volts, and a nominal resistance of 1 to 10,000 ohms, namely 500 ohms.
  • the opponent was 1 and the resistance element 3 can absorb the nominal voltage, in continuous operation without damage.
  • the high-voltage system 2 has a measuring device A, which includes the resistance element 3 of the resistor 1 as a temperature-dependent resistor as a measured variable pick-up (or measuring sensor of a sensor).
  • the measuring device A is connected in a simple way in terms of circuitry via the resistance connections 8a, 8b of the resistor 1 to the measured variable pick-up.
  • the temperature of the resistor 1 can be calculated via the known non-linear temperature coefficient TCR of the resistor 1, which ensures reliable monitoring of the discharge of the load circuit 13.

Abstract

The invention relates to a resistor (1), in particular a thick-film resistor, in particular for a high-voltage system (2) of a motor vehicle, having a nominal power of at least 10 watts, comprising: at least two electrical resistor terminals (8a, 8b); a ceramic substrate (5); and a resistor element (3) which is electrically provided between the two resistor terminals (8a, 8b) and which is made of a thick-film material (4) applied to the ceramic substrate (5), the resistor element (3) having a temperature coefficient (TCR). In order to make it easier to monitor discharge via the resistor (1), according to the invention the temperature coefficient (TCR) is >700 ppm/K, in particular >1000 ppm/K.

Description

Widerstand, insbesondere Dickschichtwiderstand Resistor, especially thick film resistor
Technisches Gebiet technical field
Die Erfindung betrifft einen Widerstand, insbesondere Dickschichtwiderstand, insbe sondere für ein Hochvoltsystem eines Kraftfahrzeugs, mit einer Nennleistung von zu mindest 10 Watt, mit zumindest zwei elektrischen Widerstandsanschlüssen, mit ei nem Keramiksubstrat und mit einem zwischen den zwei Widerstandsanschlüssen elektrisch vorgesehenen Widerstandselement aus einem auf dem Keramiksubstrat aufgebrachten Dickschichtmaterial, wobei das Widerstandselement einen Tempera turkoeffizienten aufweist. The invention relates to a resistor, in particular a thick-film resistor, in particular for a high-voltage system in a motor vehicle, with a nominal power of at least 10 watts, with at least two electrical resistance connections, with a ceramic substrate and with a resistance element electrically provided between the two resistance connections and consisting of a Ceramic substrate applied thick film material, wherein the resistance element has a temperature coefficient.
Stand der Technik State of the art
Ein Lastkreis eines Hochvoltsystems eines Kraftfahrzeugs muss bei einem Trennen einer Hochvoltbatterie des Hochvoltsystems vom Lastkreis zeit schnell entladen wer den (vgl. EP2561372B1). Hierzu weist ein Hochvoltsystem einen Entladungskreis mit einem Widerstand bzw. Entladungswiderstand auf. Bei diesem Hochvolt-Entladen nehmen bekannte Widerstände mit einem Widerstandselement aus einer Dick schichtmaterial hohe Nennleistung von zumindest 10 Watt bei niedrigem Tempera turkoeffizienten im Standard-Bereich von ± 100 ppm/K auf. A load circuit of a high-voltage system of a motor vehicle must be discharged quickly when a high-voltage battery of the high-voltage system is disconnected from the load circuit (cf. EP2561372B1). For this purpose, a high-voltage system has a discharge circuit with a resistor or discharge resistor. With this high-voltage discharge, known resistors with a resistance element made of a thick-film material take on a high rated power of at least 10 watts at a low temperature coefficient in the standard range of ±100 ppm/K.
Da zudem die Entladung überwacht wird, bedarf es im Entladungskreis im Bereich des Widerstands konstruktiv aufwendiger Schaltkreise. Since the discharge is also monitored, complex circuits are required in the discharge circuit in the area of the resistance.
Darstellung der Erfindung Presentation of the invention
Die Erfindung hat sich daher die Aufgabe gestellt, einen Widerstand der eingangs geschilderten Art derart zu verändern, dass dieser trotz einer hohen Nennleistung zur Vereinfachung eines schaltungstechnischen Aufwands zur Überwachung beitragen kann. The invention has therefore set itself the task of changing a resistor of the type described in such a way that this despite a high rated power Simplification of circuitry effort can contribute to monitoring.
Die Erfindung löst die gestellte Aufgabe durch die Merkmale des Anspruchs 1. The invention solves the problem set by the features of claim 1.
Indem vom Widerstandselement der Temperaturkoeffizienten > 700 ppm/K ist, kann im Gegensatz zum Stand der Technik der erfindungsgemäße Widerstand auch zur Messdatenerfassung, beispielsweise Temperaturmessung, verwendet werden. Der vorgegebene Temperaturkoeffizient > 700 ppm/K ermöglicht es nämlich, ausreichend genaue Messdaten beispielsweise mit einem Bezug zur Entladung zu erfassen, wodurch auch eine Schaltung bzw. ein Hochvoltsystem sicher überwacht werden kann. Dies umso besser, wenn der Temperaturkoeffizient > 1000 ppm/K ist, beispiels weise > 1000 ppm/K ist. Aufwendige zusätzliche schaltungstechnische Maßnahmen, um die Entladung des Lastkreises zu überwachen, sind daher nicht mehr notwendig - wodurch sich Entladungskreis konstruktiv erheblich vereinfachen lässt. Überraschend hat auch jener im Vergleich mit bekannten Entladungswiderständen erhöhte Temperaturkoeffizient am erfindungsgemäßen Widerstand nur nachgeord- nete Bedeutung bei einer Entladung, weil die Entladung vom Entladungskreis in der Regel auf die Nennleistung des Widerstands (Leistung, die der Widerstand im Dau erbetrieb ohne Beschädigung aufnehmen kann) beschränkt und/oder auch konstant gehalten wird, beispielsweise mithilfe einer PWM-gesteuerten Entladung. Since the temperature coefficient of the resistance element is >700 ppm/K, in contrast to the prior art, the resistance according to the invention can also be used for measuring data acquisition, for example temperature measurement. The specified temperature coefficient > 700 ppm/K makes it possible to acquire sufficiently precise measurement data, for example with reference to the discharge, which means that a circuit or a high-voltage system can also be reliably monitored. This is all the better if the temperature coefficient is >1000 ppm/K, for example >1000 ppm/K. Elaborate additional circuitry measures to monitor the discharge of the load circuit are therefore no longer necessary - which means that the design of the discharge circuit can be significantly simplified. Surprisingly, the temperature coefficient at the resistor according to the invention, which is higher than that of known discharge resistors, is only of secondary importance in the event of a discharge, because the discharge from the discharge circuit is usually limited to the rated power of the resistor (power that the resistor can absorb in continuous operation without damage). is limited and / or kept constant, for example using a PWM-controlled discharge.
Vorzugsweise liegt der Temperaturkoeffizient (TCR) im Bereich von 1000 bis 2500 ppm/K, um die Auflösung einer Messdatenerfassung am Widerstand zu erhöhen. Ins besondere liegt der Temperaturkoeffizient (TCR) im Bereich von 1500 bis 2000 ppm/K, was für eine Überwachung der Entladung ausreichend sein kann. Vorstellbar ist zudem, dass der Temperaturkoeffizient (TCR) im Bereich von 1200 bis 1800 ppm/K, liegt. The temperature coefficient (TCR) is preferably in the range from 1000 to 2500 ppm/K in order to increase the resolution of measurement data acquisition at the resistor. In particular, the temperature coefficient (TCR) is in the range of 1500 to 2000 ppm/K, which can be sufficient for discharge monitoring. It is also conceivable that the temperature coefficient (TCR) is in the range from 1200 to 1800 ppm/K.
Der Widerstand kann die Entladungszeit weiter verkürzen, indem er die Nennleistung im Bereich von 25 bis 2500 Watt aufweist. Vorzugsweise weist der Widerstand die Nennleistung bei einer Temperatur an dessen Widerstandskörper von größer gleich 25 °C, beispielsweise größer gleich 85 °C, auf. The resistor can further shorten the discharge time by having the power rating in the range of 25-2500 watts. Preferably, the resistor has the Rated power at a temperature at the resistance body of greater than or equal to 25 ° C, for example greater than or equal to 85 ° C on.
Im Allgemeinen kann sich als vorteilhaft heraussteilen, wenn der Widerstand eine Nennleistung von zumindest 10, 25, 50, 100, 15, 250, 350, 500, 600, 800, 1000, 2000, 2500 oder 5000 Watt aufweist. Vorzugsweise weist der Widerstand eine Nennleistung von höchstens 2500, insbesondere höchstens 600, Watt auf. Beispielsweise liegt der Nennwiderstand im Bereich von 25 bis 2500 Watt, insbesondere von 25 bis 600 Watt. Die Nennleistungen kann der Widerstand beispielsweise bei einer Temperatur an dessen Widerstandskörper bei 85 °C oder bei 125 °C aufweisen. In general, it can be advantageous if the resistor has a power rating of at least 10, 25, 50, 100, 15, 250, 350, 500, 600, 800, 1000, 2000, 2500 or 5000 watts. The resistor preferably has a rated power of at most 2500, in particular at most 600 watts. For example, the nominal resistance is in the range from 25 to 2500 watts, in particular from 25 to 600 watts. The resistor can have the rated power, for example, at a temperature of 85 °C or 125 °C at its resistor body.
Gerade bei Hochvoltsystemen für Kraftfahrzeuge kann sich der Widerstand auszeich nen, wenn dieser eine Nennspannung von > 30 Volt aufweist. Auch kann die Nenn spannung > 60 Volt sein oder auch > 300 Volt sein. Damit kann sich der Widerstand insbesondere als Entladungswiderstand bei Hochvoltfahrzeugen eignen. Especially in high-voltage systems for motor vehicles, the resistance can be distinguished if it has a nominal voltage of > 30 volts. The nominal voltage can also be >60 volts or >300 volts. The resistor can therefore be particularly suitable as a discharge resistor in high-voltage vehicles.
Je nach gewünschter Entladungsleistung kann der Widerstand einen Nennwider stand im Bereich von 1 bis 10000 Ohm aufweisen. Depending on the desired discharge power, the resistor can have a nominal resistance in the range from 1 to 10,000 ohms.
Bevorzugt zur Entladung von Hochvoltsystemen für Kraftfahrzeuge kann sich ein Nennwiderstand von 20 bis 5000 Ohm auszeichnen. A nominal resistance of 20 to 5000 ohms can be preferred for discharging high-voltage systems for motor vehicles.
Dient der Widerstand als Lastwiderstand, ist ein Nennwiderstand von 1 bis 200 Ohm vorstellbar, beispielsweise auch von 10 bis 100 Ohm. If the resistor is used as a load resistor, a nominal resistance of 1 to 200 ohms is conceivable, for example also from 10 to 100 ohms.
Dient der Widerstand als Messwiderstand, beispielsweise für eine Sensoranwendung , so ist ein Nennwiderstand von 100 bis 10000 Ohm vorstellbar. If the resistor is used as a measuring resistor, for example for a sensor application, a nominal resistance of 100 to 10,000 ohms is conceivable.
Die Nennleistung am Widerstand kann weiter verbessert werden, wenn das Wider standselement eine Schichtdicke von mindestens 5 pm aufweist. Vorzugsweise liegt die Schichtdicke im Bereich von 10 pm bis 35 pm, um auch Lastkreise bei einem 800 Volt Hochvoltsystem ausreichend schnell entladen zu können. Vorzugsweise ist das Widerstandselement auf dem Keramiksubstrat aufgesintert, um die Standfestigkeit des Widerstands hinsichtlich seiner Nennleistung weiter zu erhö hen. The rated power across the resistor can be further improved if the resistor element has a layer thickness of at least 5 μm. The layer thickness is preferably in the range from 10 μm to 35 μm in order to also be able to discharge load circuits sufficiently quickly in an 800 volt high-voltage system. The resistance element is preferably sintered onto the ceramic substrate in order to further increase the stability of the resistance with regard to its rated power.
Der vergleichsweise hohe Temperaturkoeffizient am Widerstand kann dadurch ge währleisten werden, wenn das Widerstandselement als elektrisch leitfähiges Material mindestens ein Ru (Ruthenium) und/oder Bi (Bismut) aufweisendes Oxid enthält. Die ses Oxid kann beispielsweise Pb2Ru206,5 und/oder B12RU2O7, etc. sein. The comparatively high temperature coefficient of the resistor can be guaranteed if the resistance element contains at least one oxide containing Ru (ruthenium) and/or Bi (bismuth) as the electrically conductive material. This oxide can be Pb2Ru2O6.5 and/or B12RU2O7, etc., for example.
Weist das Oxid Ru und Bi auf, dann ist das Verhältnis von Ru in Massenprozent zu Bi in Massenprozent (also — ) im elektrisch leitfähigen Material bevorzugt im BereichWhen the oxide comprises Ru and Bi, the ratio of mass percent Ru to mass percent Bi (i.e. - ) in the electrically conductive material is preferably in the range
Bi von 1,5 bis 3,5 zu 1. Bi from 1.5 to 3.5 to 1.
Vorzugsweise weist das Widerstandselement in der Zusammensetzung einzeln oder in Kombination Bestandteile aus der Gruppe Ca, AI, Cu auf. Diese beispielsweise als Oxide zugegeben Bestandteile können mit der elektrisch isolierenden Glaszusam mensetzung, beispielsweise Glasfritten, der Widerstandspaste beim Einbrennen der- selbigen reagieren. In der Art eines „doping“ Effekts können diese auf die elektrischen Eigenschaften des Widerstandselements wirken. Beispielsweise sinkt bei Verwen dung von Cu-Oxid (beispielsweise CuO) in der Widerstandspaste der Widerstand, hingegen erhöht sich der TCR in positive Richtung. Ähnlich verhält es sich auch bei der Zugabe von Ca-Oxid und/oder Al-Oxide der Widerstandspaste, wenngleich even tuell von einem geringen Einfluss ausgegangen werden kann. Preferably, the resistance element in the composition has components from the group Ca, Al, Cu, individually or in combination. These components, which are added as oxides, for example, can react with the electrically insulating glass composition, for example glass frits, of the resistance paste when it is baked on. They can have a “doping” effect on the electrical properties of the resistance element. For example, when using Cu oxide (e.g. CuO) in the resistor paste, the resistance decreases, but the TCR increases in the positive direction. The situation is similar when Ca oxide and/or Al oxide is added to the resistor paste, although it can be assumed that it will have a minor effect.
Die Zusammensetzung des Widerstandselements kann noch herstellungsbedingt un vermeidbare Verunreinigungen aufweisen, beispielsweise einzeln maximal 0,05 m% und insgesamt maximal 0,15 m%. The composition of the resistance element can still contain unavoidable impurities caused by production, for example a maximum of 0.05 m% individually and a maximum of 0.15 m% overall.
Vorzugsweise weist das Widerstandselement Cu im Bereich von 0,3 bis 10 m% (Mas senprozent) auf, um besonders auf den Widerstandswert und/oder auf den Wert des Temperaturkoeffizienten Einfluss nehmen zu können. Die Gefahr einer elektrischen Überlastung im Entladungskreis kann vom Widerstand vermindert werden, wenn das Widerstandselement einen positiven Temperaturkoef fizienten aufweist und damit bei höheren Temperaturen die Entladeleistung durch ei nen höheren Widerstand beschränkt. The resistance element preferably has Cu in the range from 0.3 to 10 m% (mass percent) in order to be able to influence the resistance value and/or the value of the temperature coefficient in particular. The risk of an electrical overload in the discharge circuit can be reduced by the resistance if the resistance element has a positive temperature coefficient and thus the discharge power is limited by a higher resistance at higher temperatures.
Vorzugsweise ist Keramiksubstrat AI2O3 oder AIN oder S13N4. Zudem kann das Dick schichtmaterial Cermet oder aus eine Ru-basierten Widerstandspaste sein. The ceramic substrate is preferably Al2O3 or AlN or S13N4. In addition, the thick film material can be cermet or made from a Ru-based resistor paste.
Vorzugsweise findet der erfindungsgemäße Widerstand in einem Entladungskreis ei nes Hochvoltsystems mit einer Hochvoltbatterie Verwendung. Vorstellbar ist bei spielsweise ein 400-Volt-Hochvoltsystem oder ein 800 Volt Hochvoltsystem eines Kraftfahrzeugs. The resistor according to the invention is preferably used in a discharge circuit of a high-voltage system with a high-voltage battery. For example, a 400-volt high-voltage system or an 800-volt high-voltage system of a motor vehicle is conceivable.
Weist das Hochvoltsystem eine Messeinrichtung auf, die als Messgrößen-Aufnehmer das Widerstandselement des Widerstands als temperaturabhängigen Widerstand umfasst, kann der schaltungstechnische Aufwand im Entladungskreis zur Überwa chung der Entladung weiter verringert werden. If the high-voltage system has a measuring device that includes the resistance element of the resistor as a temperature-dependent resistor as the measured variable pick-up, the outlay on circuitry in the discharge circuit for monitoring the discharge can be further reduced.
Vorstehendes kann weiter verbessert werden, wenn die Messeinrichtung über die Widerstandsanschlüsse des Widerstands mit dem Messgrößen-Aufnehmer verbun den ist. The above can be further improved if the measuring device is connected to the measured variable pick-up via the resistance terminals of the resistor.
Vorzugsweise findet das Hochvoltsystem mit dem erfindungsgemäßen Widerstand bei einem Kraftfahrzeug Verwendung. The high-voltage system with the resistor according to the invention is preferably used in a motor vehicle.
Zudem sich der erfindungsgemäße Widerstand aufgrund des vergleichsweise hohen Temperaturkoeffizienten (TCR) nicht nur als Lastwiderstand, sondern auch als Mess größen-Aufnehmer auszeichnen. Dies insbesondere, wenn solch ein erfindungsge mäßer Widerstand in einem Entladungskreis eines Hochvoltsystems eines Kraftfahr zeugs verwendet wird - um zu einer vergleichsweise hohen konstruktiven Vereinfa chung beizutragen. Der Widerstand kann als Lastwiderstand beispielsweise zur Entladung und/oder zur Strombegrenzung und/oder als Messgrößen-Aufnehmer bei spielsweise zur Temperaturmessung und/oder zur Zustandsüberwachung beispiels weise des Hochvoltsystems oder des Widerstands verwendet werden. In addition, due to the comparatively high temperature coefficient (TCR), the resistor according to the invention not only stands out as a load resistor, but also as a measured variable pick-up. This is particularly the case when such a resistor according to the invention is used in a discharge circuit of a high-voltage system of a motor vehicle—in order to contribute to a comparatively high level of structural simplification. The resistance can be used as a load resistance, for example Discharge and/or for current limitation and/or as a measured variable pickup, for example for temperature measurement and/or for status monitoring, for example of the high-voltage system or the resistance.
Kurze Beschreibung der Zeichnungen Brief description of the drawings
In den Figuren ist beispielsweise der Erfindungsgegenstand anhand einer Ausfüh rungsvariante näher dargestellt. Es zeigen Fig. 1 eine Schnittansicht des Widerstands, In the figures, for example, the subject of the invention is shown in more detail using an embodiment variant. 1 shows a sectional view of the resistor,
Fig. 2 eine vergrößerte Ansicht auf die innere Struktur eines Widerstandselements des Widerstands nach Fig. 1 und FIG. 2 is an enlarged view of the internal structure of a resistance element of the resistor of FIGS. 1 and 2. FIG
Fig. 3 eine schematische Schaltung zu einem Hochvoltsystem mit dem Widerstand nach Fig. 1. 3 shows a schematic circuit for a high-voltage system with the resistor according to FIG.
Weg zur Ausführung der Erfindung way of carrying out the invention
Nach Fig. 1 wird beispielsweise ein als Entladungswiderstand verwendeter Wider stand 1 für ein nach Fig. 3 dargestelltes Hochvoltsystem 2 eines Kraftfahrzeugs ge zeigt. According to FIG. 1, for example, a resistor used as a discharge resistor 1 is shown for a high-voltage system 2 of a motor vehicle shown in FIG. 3.
Der Widerstand 1 weist eine Nennleistung von zumindest 10 Watt auf, welche Nenn leistung der Widerstand 1 im Dauerbetrieb ohne Beschädigung aufnehmen kann. Im Ausführungsbeispiel weist der Widerstand 1 diese Nennleistung von zumindest 10 Watt bei 85 °C an dessen Widerstandskörper 20 auf, nämlich an dessen Boden („bot- tom case“). The resistor 1 has a rated power of at least 10 watts, which rated power the resistor 1 can absorb in continuous operation without damage. In the exemplary embodiment, the resistor 1 has this nominal power of at least 10 watts at 85° C. at its resistor body 20, namely at its bottom (“bottom case”).
Der elektrische Widerstand des Widerstands 1 ergibt sich im Wesentlichen durch des sen Widerstandselement 3 aus einer Dickschichtmaterial 4 (bzw. oftmals auch Dick schichtpaste oder Dickfilmpaste genannt) aus einer Ru-basierten Widerstandspaste, welches Dickschichtmaterial auf einem AI2O3 Keramiksubstrat 5 aufgetragen und auf gesintert ist - wie in Fig. 2 im Detail zu erkennen. Das Widerstandselement 3 kann die Nennleistung aufnehmen. Die Leitphasen 9 des Widerstandselement 3 sind in eine aufgeschmolzene und wie der erstarrte Glasmatrix mit einer auf die Leitphase abgestimmten Zusammensetzung eingebettet. The electrical resistance of the resistor 1 results essentially from its resistance element 3 made from a thick-film material 4 (or often also called thick-film paste or thick-film paste) from a Ru-based resistance paste, which thick-film material is applied to an Al2O3 ceramic substrate 5 and sintered onto - as can be seen in detail in FIG. The resistance element 3 can absorb the rated power. The conductive phases 9 of the resistance element 3 are embedded in a glass matrix which has been melted and solidified like the glass matrix and has a composition tailored to the conductive phase.
Zudem ist auch Cermet (Metall-Keramik-Verbundwerkstoff) als Paste vorstellbar. In addition, cermet (metal-ceramic composite material) as a paste is also conceivable.
Auf dem Widerstandselement 3 sind Metallkontakte 6a, 6b vorgesehen, auf denen T- förmige, oder nicht dargestellte L-förmige, Kontaktelemente 7a, 7b aufgesetzt und angelötet sind. Die Kontaktelemente 7a, 7b bilden am Widerstandskörper 20 die Wi derstandsanschlüsse 8a, 8b des Widerstands 1 aus. Das Widerstandselement 3 be findet sich sohin elektrisch zwischen diesen Widerstandsanschlüssen 8a, 8b des Wi derstands 1. Das Widerstandselement 3 ist im, beispielsweise metallischen, Wider standskörper 20 vorgesehen, beispielsweise mithilfe von Vergussmasse 21 gekap selt. Die Widerstandsanschlüsse 8a, 8b befinden sich außen am Widerstandskörper 20. Metal contacts 6a, 6b are provided on the resistance element 3, on which T-shaped or L-shaped contact elements 7a, 7b (not shown) are placed and soldered. The contact elements 7a, 7b form the resistance terminals 8a, 8b of the resistor 1 on the resistor body 20. FIG. The resistance element 3 is thus electrically located between these resistance connections 8a, 8b of the resistor 1. The resistance element 3 is provided in the, for example, metallic, resistor body 20, for example encapsulated with the aid of casting compound 21. The resistor connections 8a, 8b are located on the outside of the resistor body 20.
Erfindungsgemäß weist das Widerstandselement 3 einen vergleichsweise hohen Temperaturkoeffizienten (TCR) > 700 ppm/K bei einer Referenztemperatur von 25 °C, gemessen gemäß der Norm DIN EN 60115-1, auf. Damit kann der Widerstand 1 zur Temperaturmessung verwendet werden, weil dieser Widerstand eine ausreichend hohe Widerstandsänderung in Abhängigkeit dessen Temperatur aufweist. Für eine höhere Messdatenauflösung kann der Temperaturkoeffizient (TCR) > 1000 ppm/K sein, beispielsweise auch im Bereich von 1000 bis 2500 ppm/K, vorzugsweise im Bereich von 1500 bis 2000 ppm/K liegen. Das Widerstandselement 3 weist nämlich einen positiven Temperaturkoeffizienten (TCR) von 1800 ppm/K (10 6/Kelvin) auf, z. B. gemessen gemäß der Norm DIN EN 60115-1. Hierzu wurden zur Bestimmung des Temperaturkoeffizienten TCR zwei Änderungsraten des Widerstandswerts, näm lich erstens beim Ändern der Temperatur von 25 °C auf -40 °C und zweites beim Ändern der Temperatur von 25 °C auf 85 °C ermittelt. Diese Änderungsraten werden zur Berechnung der für die jeweilige Kategorietemperatur bezogenen Temperaturko effizienten TCR, wie in der Norm beschrieben, herangezogen. Eine vereinfachte Möglichkeit kann sein, dann den größeren der beiden Änderungsraten von den bei den ermittelten Änderungsraten als Temperaturkoeffizienten TCR heranzuziehen. According to the invention, the resistance element 3 has a comparatively high temperature coefficient (TCR) >700 ppm/K at a reference temperature of 25° C., measured according to the standard DIN EN 60115-1. The resistor 1 can thus be used for temperature measurement because this resistor has a sufficiently high change in resistance as a function of its temperature. For a higher measurement data resolution, the temperature coefficient (TCR) can be >1000 ppm/K, for example also in the range from 1000 to 2500 ppm/K, preferably in the range from 1500 to 2000 ppm/K. Namely, the resistance element 3 has a positive temperature coefficient (TCR) of 1800 ppm/K (10 6 /Kelvin), e.g. B. measured according to the standard DIN EN 60115-1. For this purpose, two rates of change of the resistance value were determined to determine the temperature coefficient TCR, namely first when changing the temperature from 25 °C to -40 °C and second when changing the temperature from 25 °C to 85 °C. These rates of change are used to calculate the TCR related temperature coefficient for each category temperature as described in the standard. A simplified one It may be possible then to use the larger of the two rates of change from the two rates of change determined as the temperature coefficient TCR.
Dies vereinfacht die Überwachungsschaltung eines Hochvoltsystems 2 erheblich, wie in Fig. 3 zu erkennen. This considerably simplifies the monitoring circuit of a high-voltage system 2, as can be seen in FIG.
Wie insbesondere in Fig. 2 dargestellt, weist das Widerstandselement 3 eine Schicht dicke s von mindestens 5 pm, insbesondere von 10 pm bis 35 pm, nämlich 12 pm auf. As shown in particular in FIG. 2, the resistance element 3 has a layer thickness s of at least 5 μm, in particular from 10 μm to 35 μm, namely 12 μm.
Das elektrisch leitfähige Material 9 im Widerstandselement 3 bilden elektrisch leitfä hige Ru (Ruthenium) und Bi (Bismut) aufweisende Oxide, beispielsweise Pb2Ru206,5 und/oder B12RU2O7, etc.. Vorzugsweise sind die Oxide im Widerstandselement 3 im Wesentlichen Rutheniumverbindungen. Das leitfähige Material 9 weist damit eine Ru theniumbasis auf. Des Weiteren ist im elektrisch leitfähigen Material 9 das Verhältnis
Figure imgf000010_0001
The electrically conductive material 9 in the resistance element 3 is formed by electrically conductive oxides containing Ru (ruthenium) and Bi (bismuth), for example Pb2Ru206.5 and/or B12RU2O7, etc. The oxides in the resistance element 3 are preferably essentially ruthenium compounds. The conductive material 9 thus has a ruthenium base. Furthermore, in the electrically conductive material 9 is the ratio
Figure imgf000010_0001
Weitere Oxide, wie (Ca, AI, Cu)-Oxide, sind vorstellbar. Zudem kann die Zusammen setzung noch Ca (Kalzium) und/oder AI (Aluminium) und/oder Cu (Kupfer) aufweisen. Insbesondere weist die Zusammensetzung des Widerstandselements 3 auch noch Cu im Bereich von 0,3 bis 10 m% sowie herstellungsbedingt unvermeidbare Verun reinigungen einzeln maximal 0,05 m% und insgesamt maximal 0,15 m% auf. Other oxides such as (Ca, Al, Cu) oxides are conceivable. In addition, the composition can also contain Ca (calcium) and/or Al (aluminum) and/or Cu (copper). In particular, the composition of the resistance element 3 also has Cu in the range from 0.3 to 10 m% and unavoidable manufacturing-related contaminations individually at most 0.05 m% and at most 0.15 m% in total.
Das Widerstandselement 3 weist zudem eine elektrisch isolierende Glaszusammen setzung 10, unter anderem mit Pb-Al-Silikat und/oder Ca-Al-Silikat, auf. The resistance element 3 also has an electrically insulating glass composition 10, including Pb-Al silicate and / or Ca-Al silicate on.
Nach Fig. 3 ist das Hochvoltsystem 2 näher dargestellt. Zum Hochvoltsystem 2 gehört eine Hochvoltbatterie 11 mit einer Spannung von 800V. Am Hochvoltsystem 2 ist ein Entladungskreis 12 vorgesehen, der den Lastkreis 13 mit einer Kapazität 14 und ei nem DC-AC Wandler 15 für eine nicht näher dargestellte elektrische Maschine ent lädt, wenn die Hochvoltbatterie 11 über die Schalter 16a, 16b vom Lastkreis 13 ge trennt wird. Dem Entladungskreis 12 ist eine Steuerung 17 und ein Schaltmittel 18 zum Öffnen und Schließen des Entladungskreises 12 zugeordnet. Damit kann die Steuerung 17 am Widerstand 1 eine im Wesentlichen gleichbleibende Entladungsleistung Pw si cherstellen, indem das Schaltmittel 18 getaktet mittels Pulsweitenmodulation (PWM), geöffnet und geschlossen wird. According to FIG. 3, the high-voltage system 2 is shown in more detail. A high-voltage battery 11 with a voltage of 800V belongs to the high-voltage system 2 . A discharge circuit 12 is provided on the high-voltage system 2, which discharges the load circuit 13 with a capacitance 14 and a DC-AC converter 15 for an electrical machine, not shown in detail, when the high-voltage battery 11 is disconnected from the load circuit 13 via the switches 16a, 16b will. A controller 17 and a switching means 18 for opening and closing the discharge circuit 12 are assigned to the discharge circuit 12 . The controller 17 can thus ensure an essentially constant discharge power Pw at the resistor 1 by the switching means 18 being opened and closed in a clocked manner using pulse width modulation (PWM).
Der Widerstand 1 weist hierzu eine Nennspannung von > 30 Volt, nämlich 800 Volt, und einen Nennwiderstand von 1 bis 10000 Ohm, nämlich 500 Ohm auf. Der Wider stand 1 bzw. das Widerstandselement 3 kann die Nennspannung aufnehmen, und zwar im Dauerbetrieb ohne Beschädigung. For this purpose, the resistor 1 has a nominal voltage of >30 volts, namely 800 volts, and a nominal resistance of 1 to 10,000 ohms, namely 500 ohms. The opponent was 1 and the resistance element 3 can absorb the nominal voltage, in continuous operation without damage.
Die Entladung des Lastkreises 13 wird mithilfe des Widerstands 1 überwacht. Hierzu weist das Hochvoltsystem 2 eine Messeinrichtung A auf, die als Messgrößen-Aufneh- mer (bzw. Messfühler eines Sensors) das Widerstandselement 3 des Widerstands 1 als temperaturabhängigen Widerstand umfasst. Schaltungstechnisch einfach gelöst ist die Messeinrichtung A über die Widerstandsanschlüsse 8a, 8b des Widerstands 1 mit dem Messgrößen-Aufnehmer verbunden. The discharge of the load circuit 13 is monitored using the resistor 1. For this purpose, the high-voltage system 2 has a measuring device A, which includes the resistance element 3 of the resistor 1 as a temperature-dependent resistor as a measured variable pick-up (or measuring sensor of a sensor). The measuring device A is connected in a simple way in terms of circuitry via the resistance connections 8a, 8b of the resistor 1 to the measured variable pick-up.
Mithilfe eines Strommessgeräts 19 wird bei geschlossenem Entladungskreis 12 eine Strommessung vorgenommen. Über den bekannten nicht-linearen Temperaturkoeffi zienten TCR des Widerstands 1, kann die Temperatur des Widerstands 1 berechnet werden, was eine zuverlässige Überwachung der Entladung des Lastkreises 13 si cherstellt. With the discharge circuit 12 closed, a current measurement is carried out with the aid of a current measuring device 19 . The temperature of the resistor 1 can be calculated via the known non-linear temperature coefficient TCR of the resistor 1, which ensures reliable monitoring of the discharge of the load circuit 13.
Im Allgemeinen wird festgehalten, dass „insbesondere“ als „more particularly" ins Englische übersetzt werden kann. Ein Merkmal, dem „insbesondere" vorangestellt ist, ist als fakultatives Merkmal zu betrachten, das weggelassen werden kann, und stellt damit keine Einschränkung, beispielsweise der Ansprüche, dar. Das Gleiche gilt für „vorzugsweise“, ins Englische übersetzt als „preferably“. In general, it is noted that "particularly" can be translated into English as "more particularly". A feature preceded by "particularly" is to be considered an optional feature that can be omitted and is therefore not a restriction, e.g claims. The same applies to "preferably", translated into English as "preferably".

Claims

P a t e n t a n s p r ü c h e: P atent claims:
1. Widerstand, insbesondere Dickschichtwiderstand, insbesondere für ein1. Resistor, especially thick film resistor, especially for a
Hochvoltsystem (2) eines Kraftfahrzeugs, mit einer Nennleistung von zumindest 10 Watt, mit zumindest zwei elektrischen Widerstandsanschlüssen (8a, 8b), mit einem Keramiksubstrat (5), und mit einem zwischen den zwei Widerstandsanschlüssen (8a, 8b) elektrisch vorgesehenen Widerstandselement (3) aus einem auf dem Keramiksubstrat (5) aufgebrachten Dickschichtmaterial (4), wobei das Widerstandselement (3) einen Temperaturkoeffizienten (TCR) aufweist, dadurch gekennzeichnet, dass der Temperaturkoeffizient (TCR) > 700 ppm/K, insbesondereHigh-voltage system (2) of a motor vehicle, with a rated power of at least 10 watts, with at least two electrical resistance connections (8a, 8b), with a ceramic substrate (5), and with a resistance element (3 ) from a on the ceramic substrate (5) applied thick film material (4), wherein the resistance element (3) has a temperature coefficient (TCR), characterized in that the temperature coefficient (TCR)> 700 ppm / K, in particular
> 1000 ppm/K, ist. > 1000ppm/K.
2. Widerstand nach Anspruch 1, dadurch gekennzeichnet, dass der2. Resistor according to claim 1, characterized in that the
Temperaturkoeffizient (TCR) im Bereich von 1000 bis 2500 ppm/K, insbesondere im Bereich von 1500 bis 2000 ppm/K oder insbesondere im Bereich von 1200 bis 1800 ppm/K, liegt. Temperature coefficient (TCR) in the range from 1000 to 2500 ppm/K, in particular in the range from 1500 to 2000 ppm/K or in particular in the range from 1200 to 1800 ppm/K.
3. Widerstand nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der3. Resistor according to claim 1 or 2, characterized in that the
Widerstand (1) die Nennleistung im Bereich von 25 bis 2500 Watt, insbesondere vonResistor (1) the rated power in the range from 25 to 2500 watts, in particular from
25 bis 600 Watt, und/oder die Nennleistung bei einer Temperatur an dessen Widerstandskörper (20) von größer gleich 25 °C, insbesondere größer gleich 85 °C, aufweist. 25 to 600 watts, and/or the rated power at a temperature at its resistor body (20) of greater than or equal to 25 °C, in particular greater than or equal to 85 °C.
4. Widerstand nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass der Widerstand (1) eine Nennspannung von > 30 Volt, insbesondere > 60 Volt oder4. Resistor according to one of claims 1 to 3, characterized in that the resistor (1) has a nominal voltage of> 30 volts, in particular> 60 volts or
> 300 Volt, aufweist. > 300 volts.
5. Widerstand nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass der Widerstand (1) einen Nennwiderstand von 1 bis 10000 Ohm, insbesondere von 100 bis 10000 Ohm oder von 1 bis 200 Ohm, aufweist. 5. Resistor according to one of Claims 1 to 4, characterized in that the resistor (1) has a nominal resistance of 1 to 10,000 ohms, in particular 100 to 10,000 ohms or 1 to 200 ohms.
6. Widerstand nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass das Widerstandselement (3) eine Schichtdicke (s) von mindestens 5 pm, insbesondere von 10 pm bis 35 pm, aufweist. 6. Resistor according to one of claims 1 to 5, characterized in that the resistance element (3) has a layer thickness (s) of at least 5 μm, in particular from 10 μm to 35 μm.
7. Widerstand nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass das Dickschichtmaterial (4) auf dem Keramiksubstrat (5) aufgesintert ist. 7. Resistor according to one of Claims 1 to 6, characterized in that the thick-film material (4) is sintered onto the ceramic substrate (5).
8. Widerstand nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass das Widerstandselement (3) als elektrisch leitfähiges Material mindestens ein Ru und/oder Bi aufweisendes Oxid enthält, und dass insbesondere im Falle eines Oxids mit Ru und Bi das Verhältnis von Ru in Massenprozent zu Bi in Massenprozent im elektrisch leitfähigen Material im Bereich von 1,5 bis 3,5 zu 1 ist. 8. Resistor according to one of Claims 1 to 7, characterized in that the resistance element (3) contains at least one oxide containing Ru and/or Bi as the electrically conductive material, and in that in particular in the case of an oxide with Ru and Bi the ratio of Ru mass percent to Bi mass percent in the electrically conductive material is in the range of 1.5 to 3.5 to 1.
9. Widerstand nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass das Widerstandselement in der Zusammensetzung einzeln oder in Kombination aus der Gruppe Ca, AI, Cu aufweist, sowie herstellungsbedingt unvermeidbare Verunreinigungen aufweist. 9. Resistor according to one of claims 1 to 8, characterized in that the resistance element in the composition has individually or in combination from the group Ca, Al, Cu, and has unavoidable production-related impurities.
10. Widerstand nach Anspruch 9, dadurch gekennzeichnet, dass das Widerstandselement Cu von 0,3 bis 10 m% aufweist. 10. Resistor according to claim 9, characterized in that the resistance element has Cu from 0.3 to 10 m%.
11. Widerstand nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass das Keramiksubstrat (5) AI2O3 oder AIN oder S13N4 ist und/oder dass das Dickschichtmaterial (4) Cermet oder aus einer Ru-basierten Widerstandspaste ist. 11. Resistor according to one of Claims 1 to 10, characterized in that the ceramic substrate (5) is Al2O3 or AlN or S13N4 and/or that the thick-film material (4) is cermet or is made from a Ru-based resistor paste.
12. Hochvoltsystem mit einer Hochvoltbatterie (11) und mit einem Entladungskreis (12), der mindestens einen Widerstand (1) nach einem der Ansprüche 1 bis 11 aufweist. 12. High-voltage system with a high-voltage battery (11) and with a discharge circuit (12) having at least one resistor (1) according to any one of claims 1 to 11.
13. Hochvoltsystem nach Anspruch 12, dadurch gekennzeichnet, dass das Hochvoltsystem (2) eine Messeinrichtung (A) aufweist, die als Messgrößen- Aufnehmer das Widerstandselement (3) des Widerstands (1) als temperaturabhängigen Widerstand umfasst. 13. High-voltage system according to claim 12, characterized in that the high-voltage system (2) has a measuring device (A) which, as a measured variable Sensor comprises the resistance element (3) of the resistor (1) as a temperature-dependent resistor.
14. Kraftfahrzeug mit einem Hochvoltsystem (2) nach einem der Ansprüche 12 bis 13. 14. Motor vehicle with a high-voltage system (2) according to one of claims 12 to 13.
15. Verwendung eines Widerstands (1) nach einem der Ansprüche 1 bis 11, insbesondere in einem Entladungskreis (12) eines Hochvoltsystems (2) eines Kraftfahrzeugs, als Lastwiderstand und/oder als Messgrößen-Aufnehmer. 15. Use of a resistor (1) according to any one of claims 1 to 11, in particular in a discharge circuit (12) of a high-voltage system (2) of a motor vehicle, as a load resistor and/or as a measured variable pickup.
PCT/EP2022/070269 2021-07-19 2022-07-19 Resistor, in particular thick-film resistor WO2023001856A1 (en)

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EP2561372B1 (en) 2010-04-17 2015-01-21 Audi AG High-voltage system for a motor vehicle and method for diagnosing a high-voltage system for a motor vehicle
EP3093856A1 (en) * 2014-01-08 2016-11-16 Mitsubishi Materials Corporation Resistor and production method for resistor
EP3404675A1 (en) * 2017-05-15 2018-11-21 EBG Elektronische Bauelemente GmbH Power resistor

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