WO2022255482A1 - Dispositif à ondes élastiques - Google Patents

Dispositif à ondes élastiques Download PDF

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Publication number
WO2022255482A1
WO2022255482A1 PCT/JP2022/022619 JP2022022619W WO2022255482A1 WO 2022255482 A1 WO2022255482 A1 WO 2022255482A1 JP 2022022619 W JP2022022619 W JP 2022022619W WO 2022255482 A1 WO2022255482 A1 WO 2022255482A1
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electrode
wave device
elastic wave
electrode fingers
piezoelectric layer
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PCT/JP2022/022619
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English (en)
Japanese (ja)
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和則 井上
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株式会社村田製作所
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

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  • the present disclosure relates to elastic wave devices.
  • Patent Document 1 describes an elastic wave device.
  • heat may be generated during operation of the elastic wave device.
  • the generated heat propagates in the length direction of the electrode fingers, but is less likely to propagate in the direction perpendicular to the length direction of the electrode fingers.
  • a difference in heat dissipation may occur depending on the direction.
  • cracks may occur in the piezoelectric layer due to a local difference in temperature between the area where the electrode fingers are provided and the area where the electrode fingers are not provided.
  • the present disclosure is intended to solve the above-described problems, and aims to suppress the occurrence of cracks in the piezoelectric layer.
  • the elastic wave device includes a support member having a thickness in a first direction and including a support substrate, a piezoelectric layer provided in the first direction of the support member, a piezoelectric layer provided in the first direction, one or more first electrode fingers extending in a second direction intersecting the first direction; a first busbar electrode to which the one or more first electrode fingers are connected; one or more second electrode fingers facing any one of the one or more first electrode fingers in three directions and extending in the second direction; and a second electrode finger to which the one or more second electrode fingers are connected.
  • the support member is provided with a space portion at a position at least partially overlapping with the IDT electrode when viewed in plan in the first direction, and the piezoelectric
  • the layer has a first through hole that communicates with the space, and the first through hole is the outermost first electrode finger or finger in the third direction when viewed in plan in the first direction. It is provided at a position adjacent to the second electrode finger in the third direction.
  • the elastic wave device includes a support member having a thickness in a first direction and including a support substrate, a piezoelectric layer provided in the first direction of the support member, a piezoelectric layer provided in the first direction, one or more first electrode fingers extending in a second direction intersecting the first direction; a first busbar electrode to which the one or more first electrode fingers are connected; one or more second electrode fingers facing any one of the one or more first electrode fingers in three directions and extending in the second direction; and a second electrode finger to which the one or more second electrode fingers are connected.
  • the support member is provided with a space portion at a position partially overlapping with the IDT electrode when viewed in the first direction, and the support member and the space overlaps between the first electrode finger and the second electrode finger facing in the third direction when viewed in plan in the first direction.
  • FIG. 1A is a perspective view showing an elastic wave device according to a first embodiment
  • FIG. 1B is a plan view showing the electrode structure of the first embodiment.
  • FIG. 2 is a cross-sectional view of a portion along line II-II of FIG. 1A.
  • FIG. 3A is a schematic cross-sectional view for explaining Lamb waves propagating through the piezoelectric layer of the comparative example.
  • FIG. 3B is a schematic cross-sectional view for explaining a thickness-shear primary mode bulk wave propagating through the piezoelectric layer of the first embodiment.
  • FIG. 4 is a schematic cross-sectional view for explaining the amplitude direction of a thickness-shear primary mode bulk wave propagating in the piezoelectric layer of the first embodiment.
  • FIG. 1A is a perspective view showing an elastic wave device according to a first embodiment
  • FIG. 1B is a plan view showing the electrode structure of the first embodiment.
  • FIG. 2 is a cross-sectional view of a portion along line II
  • FIG. 5 is an explanatory diagram showing an example of resonance characteristics of the elastic wave device of the first embodiment.
  • FIG. 2 is an explanatory diagram showing the relationship between , and the fractional band.
  • FIG. FIG. 7 is a plan view showing an example in which a pair of electrodes are provided in the elastic wave device of the first embodiment.
  • FIG. 8 is a reference diagram showing an example of resonance characteristics of the elastic wave device of the first embodiment.
  • FIG. 9 shows the ratio bandwidth when a large number of elastic wave resonators are configured in the elastic wave device of the first embodiment, and the phase rotation amount of the spurious impedance normalized by 180 degrees as the magnitude of the spurious. is an explanatory diagram showing the relationship between.
  • FIG. 9 shows the ratio bandwidth when a large number of elastic wave resonators are configured in the elastic wave device of the first embodiment, and the phase rotation amount of the spurious impedance normalized by 180 degrees as the magnitude of the spurious.
  • FIG. 10 is an explanatory diagram showing the relationship between d/2p, metallization ratio MR, and fractional bandwidth.
  • FIG. 11 is an explanatory diagram showing a map of the fractional band with respect to the Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is infinitely close to 0.
  • FIG. 12 is a partially cutaway perspective view for explaining the elastic wave device according to the embodiment of the present disclosure.
  • FIG. 13 is a plan view showing a first example of the elastic wave device according to the first embodiment.
  • 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13.
  • FIG. FIG. 15 is a plan view showing a second example of the elastic wave device according to the first embodiment.
  • FIG. 16 is a cross-sectional view taken along line XVI--XVI of FIG. 15.
  • FIG. 17 is a plan view showing a third example of the elastic wave device according to the first embodiment.
  • 18 is a cross-sectional view taken along line XVIII-XVIII of FIG. 17.
  • FIG. 19 is a plan view showing a fourth example of the elastic wave device according to the first embodiment.
  • 20 is a cross-sectional view taken along line XX-XX of FIG. 19.
  • FIG. FIG. 21 is a plan view showing a fifth example of the elastic wave device according to the first embodiment. 22 is a cross-sectional view taken along line XXII-XXII of FIG. 21.
  • FIG. 23 is a plan view showing a sixth example of the elastic wave device according to the first embodiment.
  • 24 is a cross-sectional view taken along line XXIV-XXIV of FIG. 23.
  • FIG. FIG. 25 is a plan view showing a sixth example of the elastic wave device according to the first embodiment.
  • 26 is a cross-sectional view taken along line XXVI--XXVI of FIG. 25.
  • FIG. FIG. 27 is a plan view showing a seventh example of the elastic wave device according to the first embodiment. 28 is a cross-sectional view taken along line XXVIII--XXVIII of FIG. 27.
  • FIG. 29 is a cross-sectional view taken along line XXIX-XXIX of FIG. 27.
  • FIG. 30 is a plan view showing an eighth example of the elastic wave device according to the first embodiment.
  • FIG. 31 is a cross-sectional view taken along line XXXI-XXXI.
  • FIG. 32 is a plan view showing a ninth example of the elastic wave device according to the first embodiment.
  • FIG. 33 is a cross-sectional view taken along line XXXIII-XXXIII.
  • FIG. 34 is a plan view showing an example of the elastic wave device according to the second embodiment. 35 is a cross-sectional view taken along line XXXV-XXXV of FIG. 34.
  • FIG. 1A is a perspective view showing an elastic wave device according to a first embodiment
  • FIG. 1B is a plan view showing the electrode structure of the first embodiment.
  • the elastic wave device 1 of the first embodiment has a piezoelectric layer 2 made of LiNbO 3 .
  • the piezoelectric layer 2 may consist of LiTaO 3 .
  • the cut angle of LiNbO 3 and LiTaO 3 is Z-cut in the first embodiment.
  • the cut angles of LiNbO 3 and LiTaO 3 may be rotated Y-cut or X-cut.
  • the Y-propagation and X-propagation ⁇ 30° propagation orientations are preferred.
  • the thickness of the piezoelectric layer 2 is not particularly limited, it is preferably 50 nm or more and 1000 nm or less in order to effectively excite the thickness shear primary mode.
  • the piezoelectric layer 2 has a first main surface 2a and a second main surface 2b facing each other in the Z direction. Electrode fingers 3 and 4 are provided on the first main surface 2a.
  • the electrode finger 3 is an example of the "first electrode finger” and the electrode finger 4 is an example of the "second electrode finger”.
  • the plurality of electrode fingers 3 are one or more "first electrode fingers” connected to the first busbar electrode 5.
  • the plurality of electrode fingers 4 are one or more “second electrode fingers” connected to the second busbar electrodes 6 .
  • the plurality of electrode fingers 3 and the plurality of electrode fingers 4 are interdigitated with each other.
  • an IDT (Interdigital Transducer) electrode including electrode fingers 3 , electrode fingers 4 , first busbar electrodes 5 , and second busbar electrodes 6 is configured.
  • the electrode fingers 3 and 4 have a rectangular shape and a length direction.
  • the electrode finger 3 and the electrode finger 4 adjacent to the electrode finger 3 face each other in a direction perpendicular to the length direction.
  • Both the length direction of the electrode fingers 3 and 4 and the direction orthogonal to the length direction of the electrode fingers 3 and 4 are directions that intersect the thickness direction of the piezoelectric layer 2 . Therefore, it can be said that the electrode finger 3 and the electrode finger 4 adjacent to the electrode finger 3 face each other in the direction intersecting the thickness direction of the piezoelectric layer 2 .
  • the thickness direction of the piezoelectric layer 2 is defined as the Z direction (or first direction)
  • the length direction of the electrode fingers 3 and 4 is defined as the Y direction (or second direction)
  • the electrode fingers 3 and 4 4 may be described as the X direction (or the third direction).
  • the length direction of the electrode fingers 3 and 4 may be interchanged with the direction orthogonal to the length direction of the electrode fingers 3 and 4 shown in FIGS. 1A and 1B. That is, in FIGS. 1A and 1B, the electrode fingers 3 and 4 may extend in the direction in which the first busbar electrodes 5 and the second busbar electrodes 6 extend. In that case, the first busbar electrode 5 and the second busbar electrode 6 extend in the direction in which the electrode fingers 3 and 4 extend in FIGS. 1A and 1B.
  • a pair of structures in which the electrode fingers 3 connected to one potential and the electrode fingers 4 connected to the other potential are adjacent to each other are arranged in a direction perpendicular to the length direction of the electrode fingers 3 and 4. Multiple pairs are provided.
  • the electrode finger 3 and the electrode finger 4 are adjacent to each other, not when the electrode finger 3 and the electrode finger 4 are arranged so as to be in direct contact, but when the electrode finger 3 and the electrode finger 4 are arranged with a gap therebetween. It refers to the case where the When the electrode finger 3 and the electrode finger 4 are adjacent to each other, there are electrodes connected to the hot electrode and the ground electrode, including other electrode fingers 3 and 4, between the electrode finger 3 and the electrode finger 4. is not placed.
  • the logarithms need not be integer pairs, but may be 1.5 pairs, 2.5 pairs, or the like.
  • the center-to-center distance, that is, the pitch, between the electrode fingers 3 and 4 is preferably in the range of 1 ⁇ m or more and 10 ⁇ m or less. Further, the center-to-center distance between the electrode fingers 3 and 4 means the center of the width dimension of the electrode fingers 3 in the direction orthogonal to the length direction of the electrode fingers 3 and the distance orthogonal to the length direction of the electrode fingers 4 . It is the distance connecting the center of the width dimension of the electrode finger 4 in the direction of
  • the electrode fingers 3 and 4 when at least one of the electrode fingers 3 and 4 is plural (when there are 1.5 or more pairs of electrodes when the electrode fingers 3 and 4 are paired as a pair of electrode pairs), the electrode fingers 3.
  • the center-to-center distance of the electrode fingers 4 refers to the average value of the center-to-center distances of adjacent electrode fingers 3 and electrode fingers 4 among 1.5 or more pairs of electrode fingers 3 and electrode fingers 4 .
  • the width of the electrode fingers 3 and 4 that is, the dimension in the facing direction of the electrode fingers 3 and 4 is preferably in the range of 150 nm or more and 1000 nm or less.
  • the center-to-center distance between the electrode fingers 3 and 4 is the distance between the center of the dimension (width dimension) of the electrode finger 3 in the direction perpendicular to the length direction of the electrode finger 3 and the length of the electrode finger 4. It is the distance connecting the center of the dimension (width dimension) of the electrode finger 4 in the direction orthogonal to the direction.
  • the direction orthogonal to the length direction of the electrode fingers 3 and 4 is the direction orthogonal to the polarization direction of the piezoelectric layer 2 .
  • “perpendicular” is not limited to being strictly perpendicular, but substantially perpendicular (the angle formed by the direction perpendicular to the length direction of the electrode fingers 3 and electrode fingers 4 and the polarization direction is, for example, 90° ⁇ 10°).
  • a supporting substrate 8 is laminated on the second main surface 2b side of the piezoelectric layer 2 with a dielectric layer 7 interposed therebetween.
  • the dielectric layer 7 and the support substrate 8 have a frame shape and, as shown in FIG. 2, openings 7a and 8a.
  • a space (air gap) 9 is thereby formed.
  • the space 9 is provided so as not to disturb the vibration of the excitation region C of the piezoelectric layer 2 . Therefore, the support substrate 8 is laminated on the second main surface 2b with the dielectric layer 7 interposed therebetween at a position not overlapping the portion where at least one pair of electrode fingers 3 and 4 are provided. Note that the dielectric layer 7 may not be provided. Therefore, the support substrate 8 can be directly or indirectly laminated to the second main surface 2b of the piezoelectric layer 2 .
  • the dielectric layer 7 is made of silicon oxide.
  • the dielectric layer 7 can be formed of an appropriate insulating material such as silicon nitride, alumina, etc., in addition to silicon oxide.
  • the support substrate 8 is made of Si.
  • the plane orientation of the surface of Si on the piezoelectric layer 2 side may be (100), (110), or (111).
  • high-resistance Si having a resistivity of 4 k ⁇ or more is desirable.
  • the support substrate 8 can also be constructed using an appropriate insulating material or semiconductor material.
  • Materials for the support substrate 8 include, for example, aluminum oxide, lithium tantalate, lithium niobate, piezoelectric materials such as crystal, alumina, magnesia, sapphire, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, and steer.
  • Various ceramics such as tight and forsterite, dielectrics such as diamond and glass, and semiconductors such as gallium nitride can be used.
  • the plurality of electrode fingers 3, electrode fingers 4, first busbar electrodes 5, and second busbar electrodes 6 are made of appropriate metals or alloys such as Al and AlCu alloys.
  • the electrode fingers 3, the electrode fingers 4, the first busbar electrodes 5, and the second busbar electrodes 6 have a structure in which an Al film is laminated on a Ti film. Note that an adhesion layer other than the Ti film may be used.
  • an AC voltage is applied between the multiple electrode fingers 3 and the multiple electrode fingers 4 . More specifically, an AC voltage is applied between the first busbar electrode 5 and the second busbar electrode 6 . As a result, it is possible to obtain resonance characteristics using a thickness-shear primary mode bulk wave excited in the piezoelectric layer 2 .
  • d/p is set to 0.5 or less.
  • the thickness-shear primary mode bulk wave is effectively excited, and good resonance characteristics can be obtained. More preferably, d/p is 0.24 or less, in which case even better resonance characteristics can be obtained.
  • the electrode fingers 3 and the electrode fingers 4 When at least one of the electrode fingers 3 and the electrode fingers 4 is plural as in the first embodiment, that is, when the electrode fingers 3 and the electrode fingers 4 form a pair of electrodes, the electrode fingers 3 and the electrode fingers When there are 1.5 pairs or more of 4, the center-to-center distance p between the adjacent electrode fingers 3 and 4 is the average distance between the center-to-center distances between the adjacent electrode fingers 3 and 4 .
  • the acoustic wave device 1 of the first embodiment has the above configuration, even if the logarithms of the electrode fingers 3 and 4 are reduced in an attempt to reduce the size, the Q value is unlikely to decrease. This is because the resonator does not require reflectors on both sides, and the propagation loss is small. The reason why the above reflector is not required is that the bulk wave of the thickness-shlip primary mode is used.
  • FIG. 3A is a schematic cross-sectional view for explaining Lamb waves propagating through the piezoelectric layer of the comparative example.
  • FIG. 3B is a schematic cross-sectional view for explaining a thickness-shear primary mode bulk wave propagating through the piezoelectric layer of the first embodiment.
  • FIG. 4 is a schematic cross-sectional view for explaining the amplitude direction of a thickness-shear primary mode bulk wave propagating in the piezoelectric layer of the first embodiment.
  • FIG. 3A shows an acoustic wave device as described in Patent Document 1, in which Lamb waves propagate through the piezoelectric layer.
  • waves propagate through the piezoelectric layer 201 as indicated by arrows.
  • the piezoelectric layer 201 has a first principal surface 201a and a second principal surface 201b, and the thickness direction connecting the first principal surface 201a and the second principal surface 201b is the Z direction.
  • the X direction is the direction in which the electrode fingers 3 and 4 of the IDT electrodes are aligned.
  • the wave propagates in the X direction as shown.
  • the wave is generated between the first main surface 2a and the second main surface 2a of the piezoelectric layer 2. It propagates almost in the direction connecting the surface 2b, that is, in the Z direction, and resonates. That is, the X-direction component of the wave is significantly smaller than the Z-direction component. Further, since resonance characteristics are obtained by propagating waves in the Z direction, no reflector is required. Therefore, no propagation loss occurs when propagating to the reflector. Therefore, even if the number of electrode pairs consisting of the electrode fingers 3 and 4 is reduced in an attempt to promote miniaturization, the Q value is unlikely to decrease.
  • the amplitude direction of the bulk wave of the primary thickness-shear mode is the first region 251 included in the excitation region C (see FIG. 1B) of the piezoelectric layer 2 and the first region 251 included in the excitation region C (see FIG. 1B). 2 area 252 is reversed.
  • FIG. 4 schematically shows bulk waves when a voltage is applied between the electrode fingers 3 so that the electrode fingers 4 have a higher potential than the electrode fingers 3 .
  • the first region 251 is a region of the excitation region C between the virtual plane VP1 that is perpendicular to the thickness direction of the piezoelectric layer 2 and bisects the piezoelectric layer 2 and the first main surface 2a.
  • the second region 252 is a region of the excitation region C between the virtual plane VP1 and the second main surface 2b.
  • At least one pair of electrodes consisting of the electrode fingers 3 and 4 is arranged. It is not always necessary to have a plurality of pairs of electrode pairs. That is, it is sufficient that at least one pair of electrodes is provided.
  • the electrode finger 3 is an electrode connected to a hot potential
  • the electrode finger 4 is an electrode connected to a ground potential.
  • the electrode finger 3 may be connected to the ground potential and the electrode finger 4 to the hot potential.
  • the at least one pair of electrodes are, as described above, electrodes connected to a hot potential or electrodes connected to a ground potential, and no floating electrodes are provided.
  • FIG. 5 is an explanatory diagram showing an example of resonance characteristics of the elastic wave device of the first embodiment.
  • the design parameters of the acoustic wave device 1 that obtained the resonance characteristics shown in FIG. 5 are as follows.
  • Piezoelectric layer 2 LiNbO3 with Euler angles (0°, 0°, 90°) Thickness of piezoelectric layer 2: 400 nm
  • Length of excitation region C (see FIG. 1B): 40 ⁇ m Number of electrode pairs consisting of electrode fingers 3 and 4: 21 pairs Center-to-center distance (pitch) between electrode fingers 3 and 4: 3 ⁇ m Width of electrode fingers 3 and 4: 500 nm d/p: 0.133
  • Dielectric layer 7 Silicon oxide film with a thickness of 1 ⁇ m
  • Support substrate 8 Si
  • the excitation region C (see FIG. 1B) is a region where the electrode fingers 3 and 4 overlap when viewed in the X direction perpendicular to the length direction of the electrode fingers 3 and 4. .
  • the length of the excitation region C is the dimension along the length direction of the electrode fingers 3 and 4 of the excitation region C. As shown in FIG. Here, the excitation region C is an example of the "intersection region".
  • the inter-electrode distances of the electrode pairs consisting of the electrode fingers 3 and 4 are all equal in a plurality of pairs. That is, the electrode fingers 3 and the electrode fingers 4 are arranged at equal pitches.
  • d/p is 0.5 or less, more preferably 0. .24 or less. This will be explained with reference to FIG.
  • FIG. It is an explanatory view showing the relationship with the fractional bandwidth as.
  • At least one pair of electrodes may be one pair, and the above p is the center-to-center distance between adjacent electrode fingers 3 and 4 in the case of one pair of electrodes. In the case of 1.5 pairs or more of electrodes, the average distance between the centers of adjacent electrode fingers 3 and 4 should be p.
  • the thickness d of the piezoelectric layer 2 if the piezoelectric layer 2 has variations in thickness, a value obtained by averaging the thickness may be adopted.
  • FIG. 7 is a plan view showing an example in which a pair of electrodes are provided in the elastic wave device of the first embodiment.
  • a pair of electrodes having electrode fingers 3 and 4 are provided on first main surface 2 a of piezoelectric layer 2 .
  • K in FIG. 7 is the intersection width.
  • the number of pairs of electrodes may be one. Even in this case, if the above d/p is 0.5 or less, it is possible to effectively excite the bulk wave in the primary mode of thickness shear.
  • the excitation region is an overlapping region of the plurality of electrode fingers 3 and 4 when viewed in the direction in which any adjacent electrode fingers 3 and 4 are facing each other. It is desirable that the metallization ratio MR of the adjacent electrode fingers 3 and 4 with respect to the region C satisfies MR ⁇ 1.75(d/p)+0.075. In that case, spurious can be effectively reduced. This will be described with reference to FIGS. 8 and 9. FIG.
  • FIG. 8 is a reference diagram showing an example of resonance characteristics of the elastic wave device of the first embodiment.
  • a spurious signal indicated by an arrow B appears between the resonance frequency and the anti-resonance frequency.
  • d/p 0.08 and the Euler angles of LiNbO 3 (0°, 0°, 90°).
  • the metallization ratio MR was set to 0.35.
  • the metallization ratio MR will be explained with reference to FIG. 1B.
  • the excitation region C is the portion surrounded by the dashed-dotted line.
  • the excitation region C is a region where the electrode fingers 3 and 4 overlap with the electrode fingers 4 when viewed in a direction perpendicular to the length direction of the electrode fingers 3 and 4, that is, in a facing direction. a region where the electrode fingers 3 overlap each other; and a region between the electrode fingers 3 and 4 where the electrode fingers 3 and 4 overlap each other.
  • the area of the electrode fingers 3 and 4 in the excitation region C with respect to the area of the excitation region C is the metallization ratio MR. That is, the metallization ratio MR is the ratio of the area of the metallization portion to the area of the excitation region C.
  • the ratio of the metallization portion included in the entire excitation region C to the total area of the excitation region C should be MR.
  • FIG. 9 shows the ratio bandwidth when a large number of elastic wave resonators are configured in the elastic wave device of the first embodiment, and the phase rotation amount of the spurious impedance normalized by 180 degrees as the magnitude of the spurious. is an explanatory diagram showing the relationship between. The ratio band was adjusted by changing the film thickness of the piezoelectric layer 2 and the dimensions of the electrode fingers 3 and 4 .
  • FIG. 9 shows the results when the piezoelectric layer 2 made of Z-cut LiNbO 3 is used, but the same tendency is obtained when the piezoelectric layer 2 with other cut angles is used.
  • the spurious is as large as 1.0.
  • the fractional band exceeds 0.17, that is, exceeds 17%, a large spurious with a spurious level of 1 or more changes the parameters constituting the fractional band, even if the passband appear within. That is, as in the resonance characteristics shown in FIG. 8, a large spurious component indicated by arrow B appears within the band. Therefore, the specific bandwidth is preferably 17% or less. In this case, by adjusting the film thickness of the piezoelectric layer 2 and the dimensions of the electrode fingers 3 and 4, the spurious response can be reduced.
  • FIG. 10 is an explanatory diagram showing the relationship between d/2p, metallization ratio MR, and fractional bandwidth.
  • various elastic wave devices 1 with different d/2p and MR were configured, and the fractional bandwidth was measured.
  • the hatched portion on the right side of the dashed line D in FIG. 10 is the area where the fractional bandwidth is 17% or less.
  • FIG. 11 is an explanatory diagram showing a map of the fractional band with respect to the Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is infinitely close to 0.
  • FIG. A hatched portion in FIG. 11 is a region where a fractional bandwidth of at least 5% or more is obtained. When the range of the area is approximated, it becomes the range represented by the following formulas (1), (2) and (3).
  • Equation (1) (0° ⁇ 10°, 20° to 80°, 0° to 60° (1-( ⁇ -50) 2 /900) 1/2 ) or (0° ⁇ 10°, 20° to 80°, [180 °-60° (1-( ⁇ -50) 2 /900) 1/2 ] ⁇ 180°) Equation (2) (0° ⁇ 10°, [180°-30°(1-( ⁇ -90) 2 /8100) 1/2 ] ⁇ 180°, arbitrary ⁇ ) Equation (3)
  • the fractional band can be sufficiently widened, which is preferable.
  • FIG. 12 is a partially cutaway perspective view for explaining the elastic wave device according to the embodiment of the present disclosure.
  • the outer peripheral edge of the space 9 is indicated by a dashed line.
  • the elastic wave device of the present disclosure may utilize plate waves.
  • the elastic wave device 301 has reflectors 310 and 311 as shown in FIG. Reflectors 310 and 311 are provided on both sides of the electrode fingers 3 and 4 of the piezoelectric layer 2 in the acoustic wave propagation direction.
  • a Lamb wave as a plate wave is excited by applying an AC electric field to the electrode fingers 3 and 4 on the space 9.
  • the reflectors 310 and 311 are provided on both sides, it is possible to obtain resonance characteristics due to Lamb waves as Lamb waves.
  • the elastic wave devices 1 and 101 use bulk waves in the primary mode of thickness shear.
  • the first electrode finger 3 and the second electrode finger 4 are adjacent electrodes, the thickness of the piezoelectric layer 2 is d, and the center of the first electrode finger 3 and the second electrode finger 4 is d/p is set to 0.5 or less, where p is the distance between them.
  • the Q value can be increased even if the elastic wave device is miniaturized.
  • piezoelectric layer 2 is made of lithium niobate or lithium tantalate.
  • the first principal surface 2a or the second principal surface 2b of the piezoelectric layer 2 has first electrode fingers 3 and second electrode fingers 4 facing each other in a direction intersecting the thickness direction of the piezoelectric layer 2. It is desirable to cover the finger 3 and the second electrode finger 4 with a protective film.
  • FIG. 13 is a plan view showing a first example of the elastic wave device according to the first embodiment.
  • 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13.
  • FIG. 13 and 14 in the acoustic wave device 1A according to the first embodiment, the piezoelectric layer 2 is provided with a first through hole 11A.
  • a member including the dielectric layer 7 and the support substrate 8 may be referred to as a support member 20.
  • the first through hole 11A is a hole penetrating through the piezoelectric layer 2 in the Z direction.
  • the first through hole 11A communicates with the space 9 in the Z direction.
  • the first through hole 11A is provided at a position adjacent to the outermost first electrode finger 3 or second electrode finger 4 in the Y direction in plan view in the Z direction.
  • the fact that the first through hole 11A is adjacent in the Y direction to the first electrode finger 3 or the second electrode finger 4 that is the outermost in the Y direction means that the first through hole 11A and the first through hole 11A are the outermost in the Y direction.
  • the piezoelectric layer 2 is not provided with the electrode fingers 3 and 4 in the region between the first electrode finger 3 or the second electrode finger 4 in the Y direction.
  • the outermost first electrode finger 3 or second electrode finger 4 in the Y direction may be referred to as the electrode finger 10 .
  • the distance in the Y direction between the first through hole 11A and the electrode finger 10 adjacent to the first through hole 11A is smaller than twice the width of the first electrode finger 3 or the second electrode finger 4 in the Y direction.
  • the distance in the Y direction between the first through-hole 11A and the electrode finger 10 adjacent to the first through-hole 11A is the distance between the first through-hole 11A and the electrode finger 10 adjacent to the first through-hole 11A. It refers to the average length in the Y direction of the region between.
  • the first through holes 11A are provided outside the IDT electrodes in the Y direction when viewed from above in the Z direction. More specifically, the first through holes 11A are provided outside the electrode regions E in the Y direction.
  • the electrode region E is a region where the first electrode fingers 3 or the second electrode fingers 4 are provided when viewed from the Y direction, and is the region occupied by the electrode fingers 10 when viewed from the X direction. refers to the area between That is, it can be said that the electrode fingers 10 are provided on one Y-direction side of the first through hole 11A, but the electrode fingers 3 and 4 are not provided on the other Y-direction side.
  • the piezoelectric layer 2 in the electrode region E is likely to reach a high temperature due to the heat generated by the operation of the elastic wave device 1A, and the piezoelectric layer 2 in the region other than the electrode region E is relatively low temperature because the heat during operation is difficult to conduct in the Y direction. easy to become.
  • the piezoelectric layer 2 in the high-temperature electrode region E and the piezoelectric layer 2 in the region other than the low-temperature electrode region E They are isolated by the first through holes 11A. As a result, a large temperature difference is less likely to occur locally in the piezoelectric layer 2, and the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the first through hole 11A has a length direction in the X direction when viewed in plan in the Z direction.
  • the length of the first through hole 11A is longer than the length of the first electrode finger 3 or the second electrode finger 4 .
  • the length of the first through-hole 11A refers to the maximum length of the first through-hole 11A in the X direction when viewed from above in the Z direction.
  • the length of the first electrode finger 3 or the second electrode finger 4 refers to the length in the longitudinal direction of the first electrode finger 3 or the second electrode finger 4.
  • FIG. Refers to the length of the direction. This allows the piezoelectric layer 2 to have a smaller area where a large temperature difference occurs.
  • the shape of the first through hole 11A is rectangular in plan view in the Z direction, but it is only an example and is not limited to this.
  • the elastic wave device 1A according to the first embodiment has been described above, the elastic wave device according to the first embodiment is not limited to this.
  • Elastic wave devices 1B to 1J according to other embodiments will be described below with reference to the drawings. It should be noted that the same reference numerals are given to the same configurations as those of the first embodiment, and the description thereof will be omitted.
  • FIG. 15 is a plan view showing a second example of the elastic wave device according to the first embodiment. 16 is a cross-sectional view taken along line XVI--XVI of FIG. 15.
  • FIG. 15 and 16 the first through hole 11B in the elastic wave device 1B according to the second embodiment overlaps at least part of the boundary between the support member 20 and the space 9.
  • the boundary between the support member 20 and the space 9 refers to the opening of the support member 20 on the Z-direction surface of the support member 20 on the piezoelectric layer 2 side.
  • the opening of the support member 20 refers to the opening 7 a of the dielectric layer 7 or the opening 8 a of the support substrate 8 . That is, in the example of FIG. 15, the boundary between the support member 20 and the space 9 refers to the opening 7a of the dielectric layer 7 on the Z-direction surface of the support member 20 on the piezoelectric layer 2 side.
  • FIG. 17 is a plan view showing a third example of the elastic wave device according to the first embodiment.
  • 18 is a cross-sectional view taken along line XVIII-XVIII of FIG. 17.
  • FIG. 17 and 18 the first through hole 11C in the elastic wave device 1C according to the third embodiment is provided between the first electrode finger 3 and the second electrode finger 4 in the Y direction. More specifically, the first through holes 11C are provided at positions adjacent to the electrode fingers 10 and overlapping the electrode regions E when viewed in plan in the Z direction. In other words, the first through hole 11C has the electrode finger 10 on one side in the Y direction and the electrode fingers 3 and 4 other than the electrode finger 10 on the other side in the Y direction. In the example of FIG.
  • the first through holes 11C are provided outside the electrode regions E in the Y direction.
  • the electrode region F is a region where the first electrode fingers 3 or the second electrode fingers 4 excluding the electrode fingers 10 are provided when viewed from the Y direction, and is sandwiched between the electrode fingers 10 when viewed from the X direction. It refers to the area where the
  • the excitation of the electrode finger 10 is suppressed. It becomes difficult for the piezoelectric layer 2 in the region where the finger 10 is provided to generate heat. Therefore, the piezoelectric layer 2 in the electrode region F, which has a high temperature, is separated from the piezoelectric layer 2 in regions other than the electrode region E, which has a relatively low temperature. As a result, a large local temperature difference is less likely to occur in the piezoelectric layer 2, and the occurrence of cracks in the piezoelectric layer 2 can be further suppressed.
  • FIG. 19 is a plan view showing a fourth example of the elastic wave device according to the first embodiment. 20 is a cross-sectional view taken along line XX-XX of FIG. 19.
  • FIG. 19 and 20 the first through holes 11D in the elastic wave device 1D according to the fourth embodiment are provided so as to overlap the electrode fingers 10 when viewed from above in the Z direction.
  • the first through holes 11D are provided outside the electrode regions F in the Y direction.
  • the first through holes 11 ⁇ /b>D so as to overlap the electrode fingers 10 in plan view in the Z direction in this manner, the excitation of the electrode fingers 10 can be suppressed.
  • the first through holes 11D are provided so that the entire electrode fingers 10 overlap when viewed in the Z direction. It may be provided so as to overlap with a part of the electrode finger 10 in plan view.
  • FIG. 21 is a plan view showing a fifth example of the elastic wave device according to the first embodiment. 22 is a cross-sectional view taken along line XXII-XXII of FIG. 21.
  • FIG. 21 and 22 the first through holes 11E in the elastic wave device 1E according to the fifth embodiment are provided around the edges of the electrode fingers 10 when viewed in the Z direction.
  • the circumference of the edge of the electrode finger 10 refers to the regions on both sides of the electrode finger 10 in the Y direction and on the tip side in the X direction.
  • the electrode finger 10 is adjacent to the first through hole 11E on both sides in the Y direction and on the tip side in the X direction.
  • the first through holes 11E are provided outside the electrode regions F in the Y direction.
  • FIG. 23 is a plan view showing a sixth example of the elastic wave device according to the first embodiment.
  • 24 is a cross-sectional view taken along line XXIV-XXIV of FIG. 23.
  • FIG. 23 and 24 the shape of the first through hole 11F in the elastic wave device 1F according to the sixth embodiment is tapered when viewed from the X direction. With this shape, unwanted waves are scattered by the taper, and the frequency characteristics of the elastic wave device 1F are improved.
  • FIG. 25 is a plan view showing a sixth example of the elastic wave device according to the first embodiment.
  • 26 is a cross-sectional view taken along line XXVI--XXVI of FIG. 25.
  • FIG. 25 and 26 the piezoelectric layer 2 in the acoustic wave device 1G according to the second embodiment is further provided with a second through hole 12A.
  • the second through hole 12A is a hole penetrating through the piezoelectric layer 2 in the Z direction.
  • the second through hole 12A communicates with the space portion 9 .
  • the second through-holes 12A are provided at positions adjacent to the electrode fingers 10 and overlapping the electrode regions E when viewed in plan in the Z direction.
  • the second through hole 12A has the electrode finger 10 on one side in the Y direction and the electrode fingers 3 and 4 other than the electrode finger 10 on the other side in the Y direction.
  • the second through holes 12A are provided outside the electrode regions E in the Y direction.
  • the second through hole 12A has a length direction in the X direction when viewed in plan in the Z direction.
  • the shape of the second through-hole 12A is rectangular in plan view in the Z direction, but this is merely an example and is not limited to this.
  • FIG. 27 is a plan view showing the seventh example of the elastic wave device according to the first embodiment.
  • 28 is a cross-sectional view taken along line XXVIII--XXVIII of FIG. 27.
  • FIG. 29 is a cross-sectional view taken along line XXIX-XXIX of FIG. 27.
  • FIGS. 27 to 29 a plurality of first through holes 11H and a plurality of second through holes 12B are provided in the elastic wave device 1H according to the seventh embodiment.
  • the first through-holes 11H and the second through-holes 12B are arranged with an interval in the X direction.
  • the shape of each of the first through-holes 11H and the second through-holes 12B is rectangular, but is not limited to this, and may be circular or elliptical, for example.
  • FIG. 30 is a plan view showing an eighth example of the elastic wave device according to the first embodiment.
  • FIG. 31 is a cross-sectional view taken along line XXXI-XXXI.
  • the space portion 9A in the elastic wave device 1I according to the eighth embodiment does not penetrate the support member 20. As shown in FIG. In the example of FIG. 30, the space 9A penetrates the dielectric layer 7 but does not penetrate the support substrate 8. In the example of FIG.
  • FIG. 32 is a plan view showing the ninth example of the elastic wave device according to the first embodiment.
  • FIG. 33 is a cross-sectional view taken along line XXXIII-XXXIII.
  • the space portion 9B in the elastic wave device 1J according to the ninth embodiment may be provided only in the dielectric layer 7.
  • FIG. 31 the space portion 9B is provided so as to penetrate the dielectric layer 7, but is not limited to this, and the space portion 9B may be provided so as not to penetrate the dielectric layer 7.
  • FIG. 33 is a cross-sectional view taken along line XXXIII-XXXIII.
  • the space portion 9B in the elastic wave device 1J according to the ninth embodiment may be provided only in the dielectric layer 7.
  • the space portion 9B is provided so as to penetrate the dielectric layer 7, but is not limited to this, and the space portion 9B may be provided so as not to penetrate the dielectric layer 7.
  • support member 20 may not include dielectric layer 7 .
  • the acoustic wave device includes the support member 20 having the thickness in the first direction and including the support substrate 8, and the piezoelectric layer 2 provided in the first direction of the support member 20. and one or more first electrode fingers 3 provided in the first direction of the piezoelectric layer 2 and extending in a second direction intersecting the first direction, and a first electrode finger 3 to which the one or more first electrode fingers 3 are connected.
  • one or more second electrode fingers 4 facing any one of the one or more first electrode fingers 3 in a third direction orthogonal to the second direction and extending in the second direction; one or more and an IDT electrode having a second busbar electrode 6 to which the second electrode finger 4 of The piezoelectric layer 2 has a first through hole communicating with the space 9, and the first through hole extends in the third direction when viewed in plan in the first direction. is provided at a position adjacent to the outermost first electrode finger 3 or second electrode finger 4 (electrode finger 10) in the third direction.
  • the area where the piezoelectric layer 2 becomes hot due to the heat generated by the operation of the acoustic wave device and the area where the temperature is relatively low are separated. Therefore, a large local temperature difference is less likely to occur in the piezoelectric layer 2, and the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the first through-hole has a length in the second direction when viewed in plan in the first direction, and the length of the first through-hole is equal to the length of the first electrode finger 3 or the second electrode finger 4. Longer than length. As a result, the area in which a large temperature difference occurs in the piezoelectric layer 2 becomes smaller, so the occurrence of cracks in the piezoelectric layer 2 can be further suppressed.
  • the distance between the first electrode finger 3 or the second electrode finger 4 and the first through hole in the third direction is more than twice the width of the first electrode finger 3 or the second electrode finger 4 in the third direction. is also small. As a result, the area in which a large temperature difference occurs in the piezoelectric layer 2 becomes smaller, so the occurrence of cracks in the piezoelectric layer 2 can be further suppressed.
  • the first through-hole overlaps at least part of the boundary between the support member 20 and the space portion 9 . Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the first through-hole is provided so as to surround the edge of the first electrode finger 3 or the second electrode finger 4 (electrode finger 10) that is the outermost in the third direction when viewed in plan in the first direction.
  • a plurality of first through holes are provided, and the plurality of first through holes are arranged at intervals in the second direction when viewed from above in the first direction. Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the outer shape of the first through hole is circular or elliptical when viewed in plan in the first direction. Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • a second electrode finger is provided between the first electrode finger 3 and the second electrode finger 4 in the third direction and communicates with the space portion 9 when viewed in plan in the first direction.
  • the first electrode finger 3 or the second electrode finger 4 (electrode finger 10) that has a through hole and is the outermost in the third direction is between the first through hole and the second through hole in the third direction.
  • the second through hole has a length in the second direction when viewed in plan in the first direction.
  • a plurality of second through holes are provided, and the plurality of second through holes are arranged at intervals in the second direction in a plan view in the first direction. Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the outer shape of the second through hole is a circle or an ellipse when viewed in plan in the first direction. Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed. Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the first through holes are arranged outside the IDT electrodes in the third direction.
  • the piezoelectric layer 2 in the electrode region E having a high temperature and the piezoelectric layer 2 in a region other than the electrode region E having a low temperature are separated by the first through holes, so that a large temperature difference occurs locally in the piezoelectric layer 2. It is possible to suppress the occurrence of cracks in the piezoelectric layer 2 .
  • the support member 20 further includes a dielectric layer 7 and the space portion 9 is provided in the dielectric layer 7 . Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the space portion 9 penetrates the support member 20 in the first direction. Even in this case, the occurrence of cracks in the piezoelectric layer 2 can be suppressed.
  • the thickness of the piezoelectric layer 2 is the thickness between the adjacent first electrode fingers 3 and the second electrode fingers 4 among the one or more first electrode fingers 3 and the one or more second electrode fingers 4. It is 2p or less when the center-to-center distance is p.
  • the piezoelectric layer 2 contains lithium niobate or lithium tantalate. As a result, it is possible to provide an elastic wave device capable of obtaining good resonance characteristics.
  • it is configured to be able to use bulk waves in the thickness-shlip mode. As a result, it is possible to provide an elastic wave device with a high coupling coefficient and good resonance characteristics.
  • the thickness of the piezoelectric layer 2 is d, and among the one or more first electrode fingers 3 and the one or more second electrode fingers 4, the distance between adjacent first electrode fingers 3 and second electrode fingers 4 is When the center-to-center distance is p, d/p is 0.24 or less. Thereby, the acoustic wave device 1 can be miniaturized and the Q value can be increased.
  • the region where the first electrode fingers 3 and the second electrode fingers 4 overlap when viewed in the third direction is the excitation region C, and one or more first electrode fingers 3 for the excitation region C. and MR ⁇ 1.75(d/p)+0.075, where MR is the metallization ratio of the one or more second electrode fingers 4 .
  • the fractional bandwidth can be reliably set to 17% or less.
  • the Euler angles ( ⁇ , ⁇ , ⁇ ) of lithium niobate or lithium tantalate are within the range of formula (1), formula (2), or formula (3) below.
  • the fractional bandwidth can be widened sufficiently.
  • Equation (1) (0° ⁇ 10°, 20° to 80°, 0° to 60° (1-( ⁇ -50) 2 /900) 1/2 ) or (0° ⁇ 10°, 20° to 80°, [180 °-60° (1-( ⁇ -50) 2 /900) 1/2 ] ⁇ 180°) Equation (2) (0° ⁇ 10°, [180°-30°(1-( ⁇ -90) 2 /8100) 1/2 ] ⁇ 180°, arbitrary ⁇ ) Equation (3)
  • FIG. 34 is a plan view showing an example of the elastic wave device according to the second embodiment.
  • 35 is a cross-sectional view taken along line XXXV-XXXV of FIG. 34.
  • FIG. 34 and 35 in the elastic wave device 1K according to the second embodiment, the boundary between the support member 20 and the space 9C is the third direction facing the third direction when viewed in plan in the first direction.
  • the elastic wave device 1K according to the second embodiment will be described with reference to the drawings, but the same components as those of the elastic wave device according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
  • the boundary of the space 9C with the support member 20 overlaps between the first electrode finger 3 and the second electrode finger 4 facing each other in the third direction when viewed in plan in the first direction.
  • the portion of the boundary between the support member 20 and the space 9C that is parallel to the X direction overlaps between the electrode finger 10 and the electrode fingers 3 and 4 other than the electrode finger 10 . That is, the space portion 9C overlaps the electrode region F when viewed in plan in the Z direction.
  • the electrode fingers 3 and 4 other than the electrode finger 10 overlap the space portion 9 when viewed in plan in the Z direction, and the electrode finger 10 overlaps the space portion 9 in plan view in the Z direction. I can say no.
  • the heat generated by the electrode fingers 3 and 4 is more likely to be conducted in the X direction than in the Y direction in the region overlapping the space 9C in plan view in the Z direction.
  • the electrode fingers 10 are also provided in a region that does not overlap with the space portion 9 when viewed in plan in the Z direction, the heat generated in the piezoelectric layer 2 in the electrode region F is once conducted in the Y direction. Therefore, it becomes easy to conduct in the X direction.
  • the elastic wave device 1K includes the support member 20 having the thickness in the first direction and including the support substrate 8, and the piezoelectric layer provided in the support member 20 in the first direction. 2, one or more first electrode fingers 3 provided in the first direction of the piezoelectric layer 2 and extending in a second direction intersecting the first direction, and a first electrode finger 3 to which the one or more first electrode fingers 3 are connected.
  • one busbar electrode 5 one or more second electrode fingers 4 facing any one of the one or more first electrode fingers 3 in a third direction orthogonal to the second direction and extending in the second direction; and an IDT electrode having a second busbar electrode 6 to which the second electrode finger 4 is connected, and the supporting member 20 partially overlaps the IDT electrode when viewed in plan in the first direction.
  • a space portion 9 is provided at a position, and the boundary between the support member 20 and the space portion 9 is defined by the first electrode finger 3 and the second electrode finger 4 facing each other in the third direction when viewed in plan in the first direction. It is provided so that it overlaps between them.
  • the heat generated in the piezoelectric layer 2 in the electrode region F is once conducted in the Y direction, and then easily conducted in the X direction.
  • a local large temperature difference is less likely to occur, and cracks in the piezoelectric layer 2 occur.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

La présente invention supprime l'apparition de fissures dans une couche piézoélectrique. Ce dispositif à ondes élastiques comprend : un élément de support ayant une épaisseur dans une première direction et comprenant un substrat de support ; une couche piézoélectrique disposée dans la première direction de l'élément de support ; et une électrode IDT ayant un ou plusieurs premiers doigts d'électrode disposés dans la première direction de la couche piézoélectrique et s'étendant dans une deuxième direction croisant la première direction, une première électrode de barre omnibus à laquelle le ou les premiers doigts d'électrode sont connectés, un ou plusieurs deuxièmes doigts d'électrode opposés à l'un quelconque du ou des premiers doigts d'électrode dans une troisième direction orthogonale à la deuxième direction et s'étendant dans la deuxième direction, et une deuxième électrode de barre omnibus à laquelle le ou les deuxièmes doigts d'électrode sont connectés. L'élément de support est pourvu d'une partie d'espace à une position chevauchant au moins partiellement l'électrode IDT dans une vue en plan dans la première direction. La couche piézoélectrique a un premier trou traversant communiquant avec la partie d'espace, et le premier trou traversant est disposé à une position adjacente dans la troisième direction au premier doigt d'électrode ou au deuxième doigt d'électrode sur le côté le plus à l'extérieur dans la troisième direction dans une vue en plan dans la première direction.
PCT/JP2022/022619 2021-06-03 2022-06-03 Dispositif à ondes élastiques WO2022255482A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010082571A1 (fr) * 2009-01-15 2010-07-22 株式会社村田製作所 Dispositif piézoélectrique et procédé de fabrication de dispositif piézoélectrique
US20120268440A1 (en) * 2011-04-20 2012-10-25 Qualcomm Mems Technologies, Inc. Widening resonator bandwidth using mechanical loading
JP2014013991A (ja) * 2012-07-04 2014-01-23 Taiyo Yuden Co Ltd ラム波デバイスおよびその製造方法
WO2016098526A1 (fr) * 2014-12-18 2016-06-23 株式会社村田製作所 Dispositif à ondes acoustiques et son procédé de fabrication
US20210119595A1 (en) * 2019-06-27 2021-04-22 Resonant Inc. Xbar frontside etch process using polysilicon sacrificial layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010082571A1 (fr) * 2009-01-15 2010-07-22 株式会社村田製作所 Dispositif piézoélectrique et procédé de fabrication de dispositif piézoélectrique
US20120268440A1 (en) * 2011-04-20 2012-10-25 Qualcomm Mems Technologies, Inc. Widening resonator bandwidth using mechanical loading
JP2014013991A (ja) * 2012-07-04 2014-01-23 Taiyo Yuden Co Ltd ラム波デバイスおよびその製造方法
WO2016098526A1 (fr) * 2014-12-18 2016-06-23 株式会社村田製作所 Dispositif à ondes acoustiques et son procédé de fabrication
US20210119595A1 (en) * 2019-06-27 2021-04-22 Resonant Inc. Xbar frontside etch process using polysilicon sacrificial layer

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