WO2022247479A1 - 光波导掺杂结构、其制作方法及硅基电光调制器 - Google Patents

光波导掺杂结构、其制作方法及硅基电光调制器 Download PDF

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WO2022247479A1
WO2022247479A1 PCT/CN2022/085441 CN2022085441W WO2022247479A1 WO 2022247479 A1 WO2022247479 A1 WO 2022247479A1 CN 2022085441 W CN2022085441 W CN 2022085441W WO 2022247479 A1 WO2022247479 A1 WO 2022247479A1
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conductivity type
optical waveguide
region
silicon
doping
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PCT/CN2022/085441
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English (en)
French (fr)
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宋若谷
蔡艳
余明斌
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上海新微技术研发中心有限公司
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Priority claimed from CN202110586101.1A external-priority patent/CN115407531A/zh
Priority claimed from CN202121168608.7U external-priority patent/CN214586291U/zh
Application filed by 上海新微技术研发中心有限公司 filed Critical 上海新微技术研发中心有限公司
Publication of WO2022247479A1 publication Critical patent/WO2022247479A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Definitions

  • the invention belongs to the field of silicon optical integration and optical communication, and in particular relates to an optical waveguide doping structure, a manufacturing method thereof and a corresponding silicon-based electro-optical modulator.
  • silicon-based electro-optic modulators are commonly used to realize the modulation function based on the carrier dispersion effect.
  • they can be mainly divided into Mach-Zehnder interference modulators (Mach-Zehnder Interference, MZI) and microring cavity resonator ( Micro Ring Resonant, MRR) modulator.
  • MZI Mach-Zehnder Interference
  • MRR Micro Ring Resonant
  • the working principle of the MZI modulator is that when a beam of light is coupled into the incident waveguide, the incident light is divided into two parts through the optical beam splitter, respectively enters the upper and lower modulation arms and transmits a certain distance, and then outputs through the optical beam combiner, the upper and lower The light fields of the two arms are superimposed.
  • the working principle of the MRR modulator is that through different The electrical structure changes the refractive index of the waveguide so that spectral changes can be achieved.
  • MRR modulator has the advantages of high modulation rate and small size, this type of modulator requires a trade-off between energy efficiency and optical bandwidth, and is greatly affected by process errors and environmental factors.
  • MZI has good process tolerance and stability, so the mainstream of the market is the MZI electro-optic modulator.
  • this type of modulator has a large size, so reducing the size of the MZI modulator and improving modulation efficiency is one of the development priorities of this type of modulator.
  • the purpose of the present invention is to provide an optical waveguide doping structure of a silicon-based electro-optic modulator, its manufacturing method and a corresponding silicon-based electro-optic modulator, which are used to solve the problem of electro-optic modulation in the prior art. problem with the larger size of the device.
  • the present invention provides an optical waveguide doping structure of a silicon-based electro-optic modulator, the optical waveguide doping structure includes: an optical waveguide ridge and first a conductive type flat area and a second conductive type flat area, the optical waveguide ridge includes a first conductive type doped area connected to the first conductive type flat area and a second conductive type flat area connected to the second conductive type flat area
  • the doped region of conductivity type, the interface of the doped region of the first conductivity type and the doped region of the second conductivity type forms a PN junction, and the doped region of the first conductivity type is composed of a plurality of plates formed from the first conductivity type
  • the region is a doped structure protruding toward the second conductive type plate region, and a plurality of the doped structures are distributed periodically.
  • the doping structure is a semicircular doping structure.
  • the radius of the semicircular doped structure is equal to the width of the optical waveguide ridge.
  • two adjacent semicircular doped structures are separated by the second conductivity type doped region, so that the optical waveguide doped structure forms an interdigitated structure.
  • the doping concentration of the first conductivity type slab region is greater than or equal to the doping concentration of the first conductivity type doping region, and the doping concentration of the second conductivity type slab region is greater than or equal to the The doping concentration of the plate region of the second conductivity type.
  • the first conductivity type is N type
  • the second conductivity type is P type
  • the optical waveguide ridge, the first conductive type flat area and the second conductive type flat area are formed in the top silicon layer of the SOI substrate.
  • a silicon dioxide upper cladding layer is also included, and the silicon dioxide upper cladding layer covers the optical waveguide ridge, the first conductive type flat area and the second conductive type flat area.
  • the present invention also provides a method for manufacturing an optical waveguide doped structure of a silicon-based electro-optic modulator.
  • the method includes the steps of: 1) providing an SOI substrate, and the SOI substrate includes a silicon substrate, an insulating layer and top layer of silicon; 2) forming optical waveguide ridges and flat plate regions on both sides of the optical waveguide ridges in the top layer of silicon through photolithography and etching processes; performing first conductive ion implantation on the optical waveguide ridge and the slab region on one side, performing second conductive ion implantation on the other part of the optical waveguide ridge and the slab region on the other side through the second pattern mask, and performing annealing activation , so as to respectively form a first conductivity type slab region and a second conductivity type slab region on both sides of the optical waveguide ridge, and the optical waveguide ridge includes a doped first conductivity type connected to the first conductivity type slab region region and the second conductivity type doped region connected to the second conductivity type plate region,
  • the present invention also provides a silicon-based electro-optic modulator, which includes: a silicon substrate; an insulating layer located on the silicon substrate; the optical waveguide doping of the silicon-based electro-optic modulator
  • the structure is located on the insulating layer; the upper cladding layer of silicon dioxide is covered on the optical waveguide ridge, the first conductivity type plate area and the second conductivity type plate area; the first electrode and the second electrode are the The first electrode is located on the upper cladding layer of silicon dioxide, and penetrates the upper cladding layer of silicon dioxide to connect with the flat plate region of the first conductivity type; the second electrode is located on the upper cladding layer of silicon dioxide and through the silicon dioxide upper cladding layer to connect with the second conductivity type plate region; adjusting the phase of the optical wave in the optical waveguide ridge by adjusting the voltage applied by the first electrode and the second electrode.
  • the optical waveguide doping structure of the silicon-based electro-optic modulator of the present invention has the following beneficial effects:
  • the present invention uses a new type of optical waveguide doping method, which can increase the length of the PN junction, increase the contact area between the optical field and the PN junction, so that under a certain waveguide length, the total length of the PN junction is significantly increased, and the modulation efficiency of the modulator can be effectively improved. Thereby reducing the size of the modulator, and there are many potential applications in the field of silicon photonics integration.
  • Figures 1 to 3 are schematic structural views showing the doped structure of the optical waveguide of the silicon-based electro-optical modulator of the present invention, wherein Figure 2 is a schematic view of the cross-sectional structure at AA' in Figure 1, and Figure 3 is a schematic view of the structure of Figure 1 Schematic diagram of the cross-sectional structure at BB' in the middle.
  • 4 to 5 are schematic structural diagrams of the silicon-based electro-optic modulator of the present invention.
  • spatial relation terms such as “below”, “below”, “below”, “below”, “above”, “on” etc. may be used herein to describe an element or element shown in the drawings.
  • a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
  • structures described as having a first feature "on top of" a second feature may include embodiments where the first and second features are formed in direct contact, as well as additional features formed between the first and second features. Embodiments between the second feature such that the first and second features may not be in direct contact.
  • the optical waveguide doping structure includes: an optical waveguide ridge 101, a first conductive type plate region 103 and a second conductive type plate located on both sides of the optical waveguide ridge 101 Region 102, the optical waveguide ridge 101 includes a doped region of the first conductivity type connected to the slab region 103 of the first conductivity type and a doped region of the second conductivity type 105 connected to the slab region 102 of the second conductivity type , the interface of the doped region of the first conductivity type and the doped region of the second conductivity type forms a PN junction, and the doped region of the first conductivity type is formed in a plurality from the flat plate region 103 of the first conductivity type toward the The doping structure pro
  • the doping structure is a semicircular doping structure 104 .
  • the radius of the semicircular doped structure 104 is equal to the width of the optical waveguide ridge 101 .
  • the diameter side (bottom) of the semicircular doped structure 104 is connected to the flat plate region 103 of the first conductivity type, and the top of the semicircular doped structure 104 is connected to the flat plate region of the second conductivity type.
  • 102 is tangent to make full use of the limited length and limited volume of the optical waveguide ridge 101 as much as possible.
  • the present invention makes the doped region of the first conductivity type be in the form of A plurality of semicircular doped structures 104 protruding from the first conductivity type flat region 103 toward the second conductivity type flat region 102, and the first conductivity type doped region and the second conductivity type doped region
  • the interface of the region 105 forms a PN junction, which can greatly increase the total length of the PN junction under a certain waveguide length, thereby effectively improving the modulation efficiency of the modulator, thereby reducing the size of the modulator.
  • the doping structure may also be in other shapes, such as a sinusoidal waveform, an ellipse, etc., and is not limited to the examples listed here.
  • two adjacent semicircular doped structures 104 are separated by the second conductivity type doped region 105, so that the optical waveguide doped structure forms a fork refers to the structure.
  • the doping concentration of the first conductivity type flat region 103 is greater than or equal to the doping concentration of the first conductivity type doping region
  • the doping concentration of the second conductivity type flat region 102 is greater than or equal to Or equal to the doping concentration of the flat plate region 102 of the second conductivity type.
  • the first conductivity type is preferably N-type, and its dopant ions can be, for example, phosphorus, etc.
  • the second conductivity type is preferably P-type, and its dopant ions can be, for example, boron.
  • the first conductivity type is N type
  • the second conductivity type is P type.
  • the optical waveguide ridge 101 , the first conductivity type flat region 103 and the second conductivity type flat region 102 are formed in the top silicon layer of the SOI substrate.
  • the optical waveguide doped structure further includes a silicon dioxide upper cladding layer, and the silicon dioxide upper cladding layer covers the optical waveguide ridge 101, the first conductive type plate region 103 and the second conductive type Type plate area 102 on.
  • Figure 2 shows a schematic cross-sectional structure at AA' in Figure 1
  • Figure 3 shows a schematic cross-sectional structure at BB' in Figure 1
  • the present invention also provides a A method for manufacturing an optical waveguide doped structure of a silicon-based electro-optic modulator, the method comprising the steps of:
  • step 1) is performed to provide an SOI substrate, and the SOI substrate includes a silicon substrate 201 , an insulating layer 202 and a top layer of silicon stacked in sequence.
  • the thickness of the top silicon layer may be between 300 nm and 500 nm.
  • step 2) forming the optical waveguide ridge 101 and the plate regions on both sides of the optical waveguide ridge 101 in the top layer of silicon by photolithography process and etching process.
  • step 3 performing the first conductive ion implantation on part of the optical waveguide ridge 101 and the slab region on one side through the first pattern mask, and performing the first conductive ion implantation on the other part of the optical waveguide ridge 101 through the second pattern mask Perform second conductive ion implantation with the flat plate region on the other side, and perform annealing activation to form the first conductive type flat plate region 103 and the second conductive type flat plate region 102 on both sides of the optical waveguide ridge 101 respectively, and the
  • the optical waveguide ridge 101 includes a doped region of the first conductivity type connected to the slab region 103 of the first conductivity type and a doped region of the second conductivity type 105 connected to the slab region 102 of the second conductivity type.
  • the interface between the conductive type doped region and the second conductive type doped region 105 forms a PN junction.
  • the region 102 has a raised doping structure, and a plurality of the doping structures are distributed periodically.
  • step 4) is performed to form a silicon dioxide upper cladding layer on the optical waveguide ridge 101 , the first conductivity type flat region 103 and the second conductivity type flat region 102 .
  • a silicon dioxide upper cladding layer can be formed on the optical waveguide ridge 101 , the first conductivity type flat region 103 and the second conductivity type flat region 102 by plasma enhanced chemical vapor deposition process.
  • the silicon-based electro-optic modulator includes: a silicon substrate 201; an insulating layer 202, located on the silicon substrate 201; the optical waveguide doping structure of the silicon-based electro-optic modulator as described above, located On the insulating layer 202; a silicon dioxide upper cladding layer covering the optical waveguide ridge 101, the first conductivity type plate region 103 and the second conductivity type plate region 102; the first electrode 204 and the second electrode 203, the first electrode 204 is located on the silicon dioxide upper cladding layer, and connects to the first conductivity type plate region 103 through the silicon dioxide upper cladding layer; the second electrode 203 is located on the On the upper cladding layer of silicon dioxide, and through the upper cladding layer of silicon dioxide, it is
  • the optical waveguide doping structure of the silicon-based electro-optic modulator of the present invention has the following beneficial effects:
  • the present invention uses a new type of optical waveguide doping method, which can increase the length of the PN junction, increase the contact area between the optical field and the PN junction, so that under a certain waveguide length, the total length of the PN junction is significantly increased, and the modulation efficiency of the modulator can be effectively improved. Thereby reducing the size of the modulator, and there are many potential applications in the field of silicon photonics integration.
  • the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.

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Abstract

一种硅基电光调制器的光波导掺杂结构，光波导掺杂结构包括：光波导脊（101）及位于光波导脊两侧的第一导电类型平板区（103）及第二导电类型平板区（102），光波导脊包括与第一导电类型平板区（103）相连的第一导电类型掺杂区及与第二导电类型平板区相连的第二导电类型掺杂区（105），第一导电类型掺杂区及第二导电类型掺杂区（105）的界面形成PN结，第一导电类型掺杂区为呈多个自第一导电类型平板区（103）朝第二导电类型平板区凸起的掺杂结构（104），多个掺杂结构呈周期分布。该光波导掺杂方式，可以提高PN结长度，增大光场与PN结接触面积，使得在一定波导长度下，PN结总长度明显增加，可以有效提高调制器的调制效率，从而缩短调制器尺寸。

Description

光波导掺杂结构、其制作方法及硅基电光调制器 技术领域
本发明属于硅光集成领域及光通讯领域，特别是涉及一种光波导掺杂结构、其制作方法及相应硅基电光调制器。
背景技术
硅基电光调制器目前常见的是基于载流子色散效应来实现调制功能，其根据光学结构主要可以分为马赫曾德尔干涉型调制器(Mach-Zehnder Interference，MZI)和微环谐振腔型(Micro Ring Resonant,MRR)调制器。MZI型调制器工作原理是当一束光耦合到入射波导中时，通过光分束器将入射光分成两部分，分别进入上下两个调制臂中传输一段距离后，通过光合束器输出，上下两个臂的光场进行叠加。当改变其中一个臂的折射率或者长度时，两臂之间的相位差随之发生变化，经两臂之间相干叠加，输出光场发生变化；而MRR型调制器工作原理为，通过不同的电学结构改变波导的折射率从而可以实现光谱的变化。MRR型调制器虽然具有调制速率高以及尺寸小的优势，但该类型的调制器需要在能量效率和光学带宽之间进行折衷选择，且受工艺误差和环境因素影响较大。而MZI就具有良好的工艺容差与稳定性，因此市场主流的是MZI型电光调制器。但该类型调制器尺寸较大，因此降低MZI型调制器尺寸，提高调制效率是该类调制器发展重点之一。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种硅基电光调制器的光波导掺杂结构、其制作方法及相应硅基电光调制器，用于解决现有技术中电光调制器的尺寸较大的问题。
为实现上述目的及其他相关目的，本发明提供一种硅基电光调制器的光波导掺杂结构，所述光波导掺杂结构包括：光波导脊及位于所述光波导脊两侧的第一导电类型平板区及第二导电类型平板区，所述光波导脊包括与所述第一导电类型平板区相连的第一导电类型掺杂区及与所述第二导电类型平板区相连的第二导电类型掺杂区，所述第一导电类型掺杂区及第二导电类型掺杂区的界面形成PN结，所述第一导电类型掺杂区为呈多个自所述第一导电类型平板区朝所述第二导电类型平板区凸起的掺杂结构，多个所述掺杂结构呈周期分布。
可选地，所述掺杂结构为半圆形掺杂结构。
可选地，所述半圆形掺杂结构的半径与所述光波导脊的宽度相等。
可选地，相邻两所述半圆形掺杂结构被所述第二导电类型掺杂区间隔，以使所述光波导掺杂结构形成叉指结构。
可选地，所述第一导电类型平板区的掺杂浓度大于或等于所述第一导电类型掺杂区的掺杂浓度，所述第二导电类型平板区的掺杂浓度大于或等于所述第二导电类型平板区的掺杂浓度。
可选地，所述第一导电类型为N型，所述第二导电类型为P型。
可选地，所述光波导脊、第一导电类型平板区及第二导电类型平板区形成于SOI衬底的顶层硅中。
可选地，还包括一二氧化硅上包层，所述二氧化硅上包层覆盖于所述所述光波导脊、第一导电类型平板区及第二导电类型平板区上。
本发明还提供一种硅基电光调制器的光波导掺杂结构的制作方法，所述制作方法包括步骤：1)提供一SOI衬底，所述SOI衬底包括依次层叠的硅衬底、绝缘层及顶层硅；2)通过光刻工艺及刻蚀工艺于所述顶层硅中形成光波导脊及位于所述光波导脊两侧的平板区；3)通过第一图形掩膜对部分所述光波导脊与其中一侧的平板区进行第一导电离子注入，通过第二图形掩膜对另一部分的所述光波导脊与另一侧的平板区进行第二导电离子注入，并进行退火激活，以于所述光波导脊两侧分别形成第一导电类型平板区及第二导电类型平板区，且所述光波导脊包括与所述第一导电类型平板区相连的第一导电类型掺杂区及与所述第二导电类型平板区相连的第二导电类型掺杂区，所述第一导电类型掺杂区及第二导电类型掺杂区的界面形成PN结，所述第一导电类型掺杂区呈多个自所述第一导电类型平板区朝所述第二导电类型平板区凸起的掺杂结构，多个所述掺杂结构呈周期分布；4)于所述光波导脊、第一导电类型平板区及第二导电类型平板区之上形成二氧化硅上包层。
本发明还提供一种硅基电光调制器，所述硅基电光调制器包括：硅衬底；绝缘层，位于所述硅衬底上；如上所述的硅基电光调制器的光波导掺杂结构，位于所述绝缘层上；二氧化硅上包层，覆盖于所述所述光波导脊、第一导电类型平板区及第二导电类型平板区上；第一电极及第二电极，所述第一电极位于所述二氧化硅上包层上，且贯穿所述二氧化硅上包层与所述第一导电类型平板区连接；所述第二电极位于所述二氧化硅上包层上，且贯穿所述二氧化硅上包层与所述第二导电类型平板区连接；通过调节所述第一电极与第二电极施加的电压以调节所述光波导脊中的光波的相位。
如上所述，本发明的硅基电光调制器的光波导掺杂结构、其制作方法及相应硅基电光调制器，具有以下有益效果：
本发明利用新型的光波导掺杂方式，可以提高PN结长度，增大光场与PN结接触面积，使得在一定波导长度下，PN结总长度明显增加，可以有效提高调制器的调制效率，从而缩短调制器尺寸，在硅光集成领域存在诸多潜在的应用。
附图说明
图1～图3显示为本发明的硅基电光调制器的光波导掺杂结构的结构示意图，其中，图2显示为图1中A-A’处的截面结构示意图，图3显示为图1中B-B’处的截面结构示意图。
图4～图5显示为本发明的硅基电光调制器的结构示意图。
元件标号说明
101                    光波导脊
102                    第二导电类型平板区
103                    第一导电类型平板区
104                    半圆形掺杂结构
105                    第二导电类型掺杂区
201                    硅衬底
202                    绝缘层
203                    第二电极
204                    第一电极
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
如在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。
为了方便描述，此处可能使用诸如“之下”、“下方”、“低于”、“下面”、“上方”、“上”等的空间关系词语来描述附图中所示的一个元件或特征与其他元件或特征的关系。将理解到，这些空间关系词语意图包含使用中或操作中的器件的、除了附图中描绘的方向之外的其他方向。 此外，当一层被称为在两层“之间”时，它可以是所述两层之间仅有的层，或者也可以存在一个或多个介于其间的层。
在本申请的上下文中，所描述的第一特征在第二特征“之上”的结构可以包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特征之间的实施例，这样第一和第二特征可能不是直接接触。
需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。
如图1～图3所示，其中，图2显示为图1中A-A’处的截面结构示意图，图3显示为图1中B-B’处的截面结构示意图，本实施例提供一种硅基电光调制器的光波导掺杂结构，所述光波导掺杂结构包括：光波导脊101及位于所述光波导脊101两侧的第一导电类型平板区103及第二导电类型平板区102，所述光波导脊101包括与所述第一导电类型平板区103相连的第一导电类型掺杂区及与所述第二导电类型平板区102相连的第二导电类型掺杂区105，所述第一导电类型掺杂区及第二导电类型掺杂区105的界面形成PN结，所述第一导电类型掺杂区为呈多个自所述第一导电类型平板区103朝所述第二导电类型平板区102凸起的掺杂结构，多个所述掺杂结构呈周期分布。
如图1所示，所述掺杂结构为半圆形掺杂结构104。所述半圆形掺杂结构104的半径与所述光波导脊101的宽度相等。具体地，所述半圆形掺杂结构104的直径侧(底部)与所述第一导电类型平板区103相连，所述半圆形掺杂结构104的顶部与所述第二导电类型平板区102相切，以尽可能充分利用所述光波导脊101有限的长度和有限的体积，相比于直线形的掺杂结构来说，本发明通过使所述第一导电类型掺杂区为呈多个自所述第一导电类型平板区103朝所述第二导电类型平板区102凸起的半圆形掺杂结构104，且所述第一导电类型掺杂区及第二导电类型掺杂区105的界面形成PN结，可以在一定波导长度下，大大增加PN结的总长度，据此有效提高调制器的调制效率，从而缩短调制器尺寸。当然，在其他的实施例中，所述掺杂结构也可以是其他形状，例如可以为正弦波形、椭圆形等，且并不限于此处所列举的示例。
如图1所示，在一个具体的实施例中，相邻两所述半圆形掺杂结构104被所述第二导电类型掺杂区105间隔，以使所述光波导掺杂结构形成叉指结构。
在本实施例中，所述第一导电类型平板区103的掺杂浓度大于或等于所述第一导电类型掺杂区的掺杂浓度，所述第二导电类型平板区102的掺杂浓度大于或等于所述第二导电类型 平板区102的掺杂浓度。
在本实施例中，所述第一导电类型优选为N型，其掺杂离子例如可以为磷等，所述第二导电类型优选为P型，其掺杂离子例如可以为硼等。当然，在其他的实施例中，所述第一导电类型为N型，所述第二导电类型为P型。
在本实施例中，所述光波导脊101、第一导电类型平板区103及第二导电类型平板区102形成于SOI衬底的顶层硅中。具体地，所述光波导掺杂结构还包括一二氧化硅上包层，所述二氧化硅上包层覆盖于所述所述光波导脊101、第一导电类型平板区103及第二导电类型平板区102上。
如图1～图3所示，其中，图2显示为图1中A-A’处的截面结构示意图，图3显示为图1中B-B’处的截面结构示意图，本发明还提供一种硅基电光调制器的光波导掺杂结构的制作方法，所述制作方法包括步骤：
首先进行步骤1)，提供一SOI衬底，所述SOI衬底包括依次层叠的硅衬底201、绝缘层202及顶层硅。
作为示例，所述顶层硅的厚度可以为300纳米～500纳米之间。
然后进行步骤2)，通过光刻工艺及刻蚀工艺于所述顶层硅中形成光波导脊101及位于所述光波导脊101两侧的平板区。
接着进行步骤3)，通过第一图形掩膜对部分所述光波导脊101与其中一侧的平板区进行第一导电离子注入，通过第二图形掩膜对另一部分的所述光波导脊101与另一侧的平板区进行第二导电离子注入，并进行退火激活，以于所述光波导脊101两侧分别形成第一导电类型平板区103及第二导电类型平板区102，且所述光波导脊101包括与所述第一导电类型平板区103相连的第一导电类型掺杂区及与所述第二导电类型平板区102相连的第二导电类型掺杂区105，所述第一导电类型掺杂区及第二导电类型掺杂区105的界面形成PN结，所述第一导电类型掺杂区呈多个自所述第一导电类型平板区103朝所述第二导电类型平板区102凸起的掺杂结构，多个所述掺杂结构呈周期分布。
最后进行步骤4)，于所述光波导脊101、第一导电类型平板区103及第二导电类型平板区102之上形成二氧化硅上包层。
例如，可以通过等离子体增强化学气相沉积工艺于所述光波导脊101、第一导电类型平板区103及第二导电类型平板区102之上形成二氧化硅上包层。
如图4～图5所示，其中，图4对应于图1中A-A’处的截面结构，图5对应于图1中B-B’处的截面结构，本实施例还提供一种硅基电光调制器，所述硅基电光调制器包括：硅衬底201； 绝缘层202，位于所述硅衬底201上；如上所述的硅基电光调制器的光波导掺杂结构，位于所述绝缘层202上；二氧化硅上包层，覆盖于所述所述光波导脊101、第一导电类型平板区103及第二导电类型平板区102上；第一电极204及第二电极203，所述第一电极204位于所述二氧化硅上包层上，且贯穿所述二氧化硅上包层与所述第一导电类型平板区103连接；所述第二电极203位于所述二氧化硅上包层上，且贯穿所述二氧化硅上包层与所述第二导电类型平板区102连接；通过调节所述第一电极204与第二电极203施加的电压以调节所述光波导脊101中的光波的相位。
如上所述，本发明的硅基电光调制器的光波导掺杂结构、其制作方法及相应硅基电光调制器，具有以下有益效果：
本发明利用新型的光波导掺杂方式，可以提高PN结长度，增大光场与PN结接触面积，使得在一定波导长度下，PN结总长度明显增加，可以有效提高调制器的调制效率，从而缩短调制器尺寸，在硅光集成领域存在诸多潜在的应用。
所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (10)

  1. 一种硅基电光调制器的光波导掺杂结构，其特征在于，所述光波导掺杂结构包括：
    光波导脊及位于所述光波导脊两侧的第一导电类型平板区及第二导电类型平板区，所述光波导脊包括与所述第一导电类型平板区相连的第一导电类型掺杂区及与所述第二导电类型平板区相连的第二导电类型掺杂区，所述第一导电类型掺杂区及第二导电类型掺杂区的界面形成PN结，所述第一导电类型掺杂区为呈多个自所述第一导电类型平板区朝所述第二导电类型平板区凸起的掺杂结构，多个所述掺杂结构呈周期分布。
  2. 根据权利要求1所述的硅基电光调制器的光波导掺杂结构，其特征在于：所述掺杂结构为半圆形掺杂结构。
  3. 根据权利要求2所述的硅基电光调制器的光波导掺杂结构，其特征在于：所述半圆形掺杂结构的半径与所述光波导脊的宽度相等。
  4. 根据权利要求3所述的硅基电光调制器的光波导掺杂结构，其特征在于：相邻两所述半圆形掺杂结构被所述第二导电类型掺杂区间隔，以使所述光波导掺杂结构形成叉指结构。
  5. 根据权利要求1所述的硅基电光调制器的光波导掺杂结构，其特征在于：所述第一导电类型平板区的掺杂浓度大于或等于所述第一导电类型掺杂区的掺杂浓度，所述第二导电类型平板区的掺杂浓度大于或等于所述第二导电类型平板区的掺杂浓度。
  6. 根据权利要求1所述的硅基电光调制器的光波导掺杂结构，其特征在于：所述第一导电类型为N型，所述第二导电类型为P型。
  7. 根据权利要求1所述的硅基电光调制器的光波导掺杂结构，其特征在于：所述光波导脊、第一导电类型平板区及第二导电类型平板区形成于SOI衬底的顶层硅中。
  8. 根据权利要求6所述的硅基电光调制器的光波导掺杂结构，其特征在于：还包括一二氧化硅上包层，所述二氧化硅上包层覆盖于所述的光波导脊、第一导电类型平板区及第二导电类型平板区上。
  9. 一种如权利要求1～8任意一项所述的硅基电光调制器的光波导掺杂结构的制作方法，其特征在于，包括步骤：
    1)提供一SOI衬底，所述SOI衬底包括依次层叠的硅衬底、绝缘层及顶层硅；
    2)通过光刻工艺及刻蚀工艺于所述顶层硅中形成光波导脊及位于所述光波导脊两侧的平板区；
    3)通过第一图形掩膜对部分所述光波导脊与其中一侧的平板区进行第一导电离子注入，通过第二图形掩膜对另一部分的所述光波导脊与另一侧的平板区进行第二导电离子注入，并进行退火激活，以于所述光波导脊两侧分别形成第一导电类型平板区及第二导电类型平板区，且所述光波导脊包括与所述第一导电类型平板区相连的第一导电类型掺杂区及与所述第二导电类型平板区相连的第二导电类型掺杂区，所述第一导电类型掺杂区及第二导电类型掺杂区的界面形成PN结，所述第一导电类型掺杂区呈多个自所述第一导电类型平板区朝所述第二导电类型平板区凸起的掺杂结构，多个所述掺杂结构呈周期分布；
    4)于所述光波导脊、第一导电类型平板区及第二导电类型平板区之上形成二氧化硅上包层。
  10. 一种硅基电光调制器，其特征在于，所述硅基电光调制器包括：
    硅衬底；
    绝缘层，位于所述硅衬底上；
    如权利要求1～6任意一项所述的硅基电光调制器的光波导掺杂结构，位于所述绝缘层上；
    二氧化硅上包层，覆盖于所述所述光波导脊、第一导电类型平板区及第二导电类型平板区上；
    第一电极及第二电极，所述第一电极位于所述二氧化硅上包层上，且贯穿所述二氧化硅上包层与所述第一导电类型平板区连接；所述第二电极位于所述二氧化硅上包层上，且贯穿所述二氧化硅上包层与所述第二导电类型平板区连接；通过调节所述第一电极与第二电极施加的电压以调节所述光波导脊中的光波的相位。
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