WO2022243908A3 - Resonator device - Google Patents

Resonator device Download PDF

Info

Publication number
WO2022243908A3
WO2022243908A3 PCT/IB2022/054641 IB2022054641W WO2022243908A3 WO 2022243908 A3 WO2022243908 A3 WO 2022243908A3 IB 2022054641 W IB2022054641 W IB 2022054641W WO 2022243908 A3 WO2022243908 A3 WO 2022243908A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
piezoelectric material
resonator device
metallic material
constitutes
Prior art date
Application number
PCT/IB2022/054641
Other languages
French (fr)
Other versions
WO2022243908A2 (en
Inventor
Gianluca Piazza
Gabriel VIDAL ÁLVAREZ
Original Assignee
Spectron Microsystems S.R.L.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spectron Microsystems S.R.L. filed Critical Spectron Microsystems S.R.L.
Priority to CN202280035465.3A priority Critical patent/CN117321914A/en
Publication of WO2022243908A2 publication Critical patent/WO2022243908A2/en
Publication of WO2022243908A3 publication Critical patent/WO2022243908A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surgical Instruments (AREA)
  • Massaging Devices (AREA)

Abstract

A resonator device comprising a layer of piezoelectric material (2) provided with one pair of end faces (3, 4) in such a way as to selectively generate an acoustic wave propagating from said faces (3, 4); at least one layer of metallic material (5) placed directly on acorresponding face (3, 4) of the piezoelectric material (2). The layer of metallic material (5) constitutes an electrode suited to interact with the corresponding face (3, 4) of said layer of piezoelectric material (2). The layer of metallic material (5) also constitutes a reflector for the acoustic wave generated by said piezoelectric material (2).
PCT/IB2022/054641 2021-05-19 2022-05-18 Resonator device WO2022243908A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202280035465.3A CN117321914A (en) 2021-05-19 2022-05-18 Resonator device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT102021000013004A IT202100013004A1 (en) 2021-05-19 2021-05-19 RESONATOR DEVICE
IT102021000013004 2021-05-19

Publications (2)

Publication Number Publication Date
WO2022243908A2 WO2022243908A2 (en) 2022-11-24
WO2022243908A3 true WO2022243908A3 (en) 2023-03-02

Family

ID=77519504

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2022/054641 WO2022243908A2 (en) 2021-05-19 2022-05-18 Resonator device

Country Status (3)

Country Link
CN (1) CN117321914A (en)
IT (1) IT202100013004A1 (en)
WO (1) WO2022243908A2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6441703B1 (en) * 2000-01-18 2002-08-27 Texas Instruments Incorporated Multiple frequency acoustic reflector array and monolithic cover for resonators and method
US20080204857A1 (en) * 2007-02-28 2008-08-28 Maxim Integrated Products, Inc. Bragg mirror optimized for shear waves
US20100013573A1 (en) * 2007-04-11 2010-01-21 Murata Manufacturing Co., Ltd. Piezoelectric thin-film filter
US20150280687A1 (en) * 2014-03-31 2015-10-01 Avago Technologies General Ip (Singapore) Pte.Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
US20160118958A1 (en) * 2014-10-28 2016-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd Acoustic resonator device with structures having different apodized shapes
US20190372548A1 (en) * 2018-01-19 2019-12-05 Wuhan Yanxi Micro Components Co., Ltd. Film bulk acoustic resonator
WO2021021747A1 (en) * 2019-07-31 2021-02-04 QXONIX Inc. Acoustic device with layer structures, devices and systems

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150118958A1 (en) * 2013-10-25 2015-04-30 Devicefidelity, Inc. Switching between near-field communication systems

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6441703B1 (en) * 2000-01-18 2002-08-27 Texas Instruments Incorporated Multiple frequency acoustic reflector array and monolithic cover for resonators and method
US20080204857A1 (en) * 2007-02-28 2008-08-28 Maxim Integrated Products, Inc. Bragg mirror optimized for shear waves
US20100013573A1 (en) * 2007-04-11 2010-01-21 Murata Manufacturing Co., Ltd. Piezoelectric thin-film filter
US20150280687A1 (en) * 2014-03-31 2015-10-01 Avago Technologies General Ip (Singapore) Pte.Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
US20160118958A1 (en) * 2014-10-28 2016-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd Acoustic resonator device with structures having different apodized shapes
US20190372548A1 (en) * 2018-01-19 2019-12-05 Wuhan Yanxi Micro Components Co., Ltd. Film bulk acoustic resonator
WO2021021747A1 (en) * 2019-07-31 2021-02-04 QXONIX Inc. Acoustic device with layer structures, devices and systems

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHEN D ET AL: "The AlN based solidly mounted resonators consisted of the all-metal conductive acoustic Bragg reflectors", VACUUM, PERGAMON PRESS, GB, vol. 85, no. 2, 20 August 2010 (2010-08-20), pages 302 - 306, XP027298116, ISSN: 0042-207X, [retrieved on 20100708] *
DEMIGUEL-RAMOS M ET AL: "Tungsten Oxide Layers of High Acoustic Impedance for Fully Insulating Acoustic Reflectors", IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL, IEEE, USA, vol. 63, no. 7, 1 July 2016 (2016-07-01), pages 938 - 944, XP011615724, ISSN: 0885-3010, [retrieved on 20160630], DOI: 10.1109/TUFFC.2015.2498968 *
TANSKAYA T N ET AL: "The influence of surface roughness of Bragg reflector layers on characteristics of microwave solidly mounted resonator", 2015 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), IEEE, 21 May 2015 (2015-05-21), pages 1 - 4, XP033166997, DOI: 10.1109/SIBCON.2015.7147233 *

Also Published As

Publication number Publication date
CN117321914A (en) 2023-12-29
WO2022243908A2 (en) 2022-11-24
IT202100013004A1 (en) 2022-11-19

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