WO2022200038A2 - Optoelectronic access system and method for producing a non-duplicatable key - Google Patents
Optoelectronic access system and method for producing a non-duplicatable key Download PDFInfo
- Publication number
- WO2022200038A2 WO2022200038A2 PCT/EP2022/055939 EP2022055939W WO2022200038A2 WO 2022200038 A2 WO2022200038 A2 WO 2022200038A2 EP 2022055939 W EP2022055939 W EP 2022055939W WO 2022200038 A2 WO2022200038 A2 WO 2022200038A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- access system
- light
- key
- optoelectronic
- electrically conductive
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002800 charge carrier Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 239000002096 quantum dot Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 6
- 230000004304 visual acuity Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- -1 compound nitride Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
- G06F21/31—User authentication
- G06F21/34—User authentication involving the use of external additional devices, e.g. dongles or smart cards
- G06F21/35—User authentication involving the use of external additional devices, e.g. dongles or smart cards communicating wirelessly
Definitions
- the invention relates to an optoelectronic access system with a non-duplicate, electrically operated key and a method for producing a non-duplicate key.
- Access to facilities or rooms worthy of protection or also data is usually secured by mechanically, optically, electronically or software-technically secured locking systems.
- authorized access users have an authorized key or password that must be recognized by the access system before access to premises or data is granted.
- the property of the keys (passwords) is particularly important for the long-term security of these access systems. They are at least difficult to copy, and ideally not at all.
- the invention relates to an optoelectronic access system.
- the opto-electronic access system comprises a non-duplicable, electrically operated key that emits a statistically defined light pattern and a photodetector that resolves location and wavelength with a light-power-sensitive output signal.
- the spatial resolution of the photodetector is at least in the range of the resolution limited by diffraction for the smallest wavelength of the emitted light pattern.
- Such an optoelectronic access system can be used to ensure that only authorized persons have access to rooms or data. Since the access system according to the invention is an optoelectronic component with at least one statistically generated, non-copyable component, it cannot be copied like mechanical access systems.
- optical and electronic components are advantageously combined with one another, so that the light pattern to be detected can be generated electrically. Also advantageous is the design of the statistically generated component of the key in the form of light-emitting objects, in which characteristic properties of the light emission depend on the size, shape and composition of the objects or their immediate surroundings themselves. Characteristic properties can be, for example, the wavelength or the intensity of the light emission. Other characteristics of light are known and can also depend on the size, shape and composition of the objects. It is known that light emissions can have an intensity distribution over wavelength ranges (emission bands) of different sizes, which also overlap for different objects of the same type. As will be beneficial viewed when the light-emitting objects have particularly narrow-band emissions with particularly low overlap.
- An advantage according to the invention is that the period of time for the validation of an access system according to the invention, in contrast to access systems prepared quantum mechanically, is not limited.
- a photodetector is an electronic component which can also be referred to as a light sensor, optical detector or optoelectronic sensor. Designs of such photodetectors as a concatenation of individual photodetector cells to form detector rows or also detector arrays are known. Also known is an operating mode predetermined by external electrical voltage, which leads to a current signal proportional to the light intensity (proportional measurement). In addition, designs of photodetectors are known which limit the light sensitivity to a specific wavelength or small wavelength ranges. According to the invention, the photodetector has location-sensitive and wavelength-sensitive detection properties in order to spatially and in terms of wavelength analyze the randomly generated light pattern. According to the invention, operation of the photodetector in the proportional mode is also possible.
- the photodetector is advantageous to design as a detector row or detector field with successive wavelength sensitivity of the individual cells, so that the wavelength range required for detection is covered with sufficient resolution.
- An embodiment in which the wavelength sensitivity of the individual cells is limited to a wavelength range that corresponds to the largest wavelength range that is emitted by a single object of the key is considered to be particularly advantageous.
- the detection area of the individual cells should be chosen just large enough that the position of the light-emitting objects can be separated from one another.
- a single photodetector could be used as the detection system.
- the position of the detector over the light-emitting area of the key must be changeable and controllable, and the wavelength sensitivity of the detection must also be controllable over the necessary wavelength range.
- the key comprises a discrete but random number of light emitters.
- the light emitters are designed in such a way that they generate a spatially randomly distributed light pattern.
- the number of emitters should be selected at least so large that it is not spatially possible to imitate the light pattern by means of a deterministic arrangement of discrete light emitters.
- the number of emitters should be chosen so small that the emitters can be separated both spatially and with regard to their wavelength.
- the emission of several spatially closely adjacent emitters can no longer be resolved by the detection system, but spatially separate groups of emitters nevertheless have a statistically generated light pattern.
- the non-duplicate electrically operated key may comprise a substrate or three-dimensional medium (e.g., silicon substrates, germanium substrates, compound semiconductor substrates, compound oxide substrates, compound nitride substrates, layered semiconductors, etc.).
- the light emitters are distributed in a static but fixed manner on the base or substrate.
- the light emitters emit light in the form of a pattern.
- the position, shape, composition and size of the light emitters are statistically distributed throughout the manufacturing process and are permanently defined by subsequent process steps.
- the production of the light emitters can be produced in a single or multiple steps. Those dimensions of the light emitters that lead to particularly strong fluctuations in the properties of the light emission when the shape, composition and size of the light emitters change are advantageous. It is known that this can be achieved for particularly small dimensions, and in particular when quantum mechanical effects can no longer be neglected.
- the light emitters consist of semiconducting materials.
- semiconducting materials can be selected from silicon, germanium or from compounds of elements from the 3rd and 5th or 2nd and 6th main groups of the periodic table of the elements.
- Particularly small keys in the form of electrically operated light-emitting diodes can advantageously be produced by using semiconducting materials.
- Particularly small designs of the key are to be preferred since both the statistical influence of the size, shape, composition and position of the emitter on the emission properties is greater and a deterministic production of key copies is made more difficult.
- the wavelength distribution of the emission of a light emitter depends on the number of possible electronic transitions in the emitter within the specified energy interval. A minimum number of states involved in the emission process always arises when only those electronic states are involved that can only be occupied with as many electrons as specified by a set of discrete numbers (quantum numbers) that is characteristic of the state (fully quantized state). ).
- the light emitters generate the light emission from exclusively fully quantized transitions, so that the wavelength distribution of the emission of each individual emitter assumes a minimum.
- Light emitters, which generate the light emission from fully quantized transitions lead to a particularly secure key.
- any light emitter could emit single photons, which represent non-copyable quantum states, with suitable excitation.
- With a suitable detector it would then be possible to measure the individual photon characteristics of each individual light emitter and thus create a fourth dimension of encryption.
- the injection of charge carriers into quantum states is subject to certain requirements and therefore influences the light intensity of each individual emitter. It is also known that these requirements can be weakened if the charge carriers are injected from a non-quantized or not fully quantized reservoir of charge carriers.
- the light emitters additionally have non-quantized transitions in order to achieve the greatest possible intensity for each light emitter.
- the individual light emitters are designed as semiconductor quantum dots.
- semiconductor quantum dots makes it possible to ensure in a simple manner that the key includes the aforementioned properties and therefore cannot be copied.
- optoelectronic light emitters made of semiconductor materials preferably have a vertical layer structure.
- a construction is preferred which results in a particularly homogeneous injection of charge carriers over the entire surface of the component.
- the key has a layer structure vertical to the light-emitting surface, in which charge carriers are injected in a targeted inhomogeneous manner over the surface of the component. This is advantageous to increase the position-dependent intensity of the single light emitter.
- the key consists at least partially of at least one monocrystalline material.
- a key that consists of at least partially single-crystal layers in the vertical layer structure is advantageous for a particularly efficient excitation of the light centers, for example by electric current, and for vertical light emission from the surface. With a random distribution of the light centers in a plane parallel to the surface, the light pattern could be detected in a space above the surface that is particularly easily accessible for detectors.
- the photodetector can be driven electrically.
- the photodetector comprises semiconducting materials.
- the invention also relates to a method for producing a non-duplicable key, which comprises the following steps, a) providing at least one monocrystalline substrate on which a layer sequence with at least three electrically conductive layers can be epitaxially deposited using a growth method, b) deposition a first electrically conductive layer on the substrate with uniform charge carrier polarity, c) deposition of a second electrically conductive layer on the substrate, the second layer having at least one material which is related to the underlying Layer has deviating atomic distances in at least one crystallographically oriented growth plane, d) deposition of a third electrically conductive layer on the substrate, which has uniform charge carrier polarity, the charge carrier polarity being opposite to the charge carrier polarity of the first electrically conductive layer, e) application of electrical contacts to the first electrically conductive layer from step b) and the third electrically conductive layer from step d) in such a way that a current flow through the light emitter is generated by applying an electrical voltage.
- Epitaxy processes such as B. metal-organic vapor phase epitaxy or molecular beam epitaxy allow the atom were accurate deposition of semiconducting and other materials and the manufacture of light emitting diodes.
- the implementation of the light centers with such a method is advantageous in order to generate a light intensity sufficient for the detection from the individual centers.
- Any epitaxial method and the combination of such methods with other suitable, possibly non-epitaxial methods that is/are suitable for a statistical production of light centers are encompassed by this embodiment.
- the uniform charge polarity in step b) can be n-conducting or p-conducting, for example.
- the same charge carrier type as specified by the choice of substrate.
- step c) light emitters are produced in step c) by means of lattice straining.
- the lattice straining is a mechanical straining.
- substrate surfaces can be modified by suitable methods in such a way that local stresses arise.
- certain layers located below the surface can be transformed in a chemical process in such a way that the volume of these layers changes and thus causes mechanical stress.
- the light emitters are generated randomly but within a predetermined area by growth on a locally strained substrate.
- the substrate has local stress on the growth surface.
- the random formation of the quantum dots can be limited to this area by spatially defined prestressing of the surface without affecting the statistical properties of the ensemble of quantum dots To get picked up. This is advantageous for electrical operation of the key and thus of the optoelectronic access system according to the invention, since the current injection can be limited to this area and thus leads to particularly energy-efficient operation.
- FIG. 4 shows a third embodiment according to the invention of the optoelectronic key for the access system according to the invention
- FIG. 1 shows an embodiment of the optoelectronic access system according to the invention consisting of a non-duplicate, electrically operated key 101 and a location and wavelength-resolving photodetector 102.
- the photodetector 102 is designed in the form of a row with individual cells. Each cell is sensitive to discrete sequential wavelength ranges.
- the photodetector 102 sequentially scans the light pattern 103 of the emission generated by the light emitters 101a and thus decodes the key 101.
- FIG. 2 shows a first embodiment of a non-duplicate, electrically operated optoelectronic key 101 for the access system according to the invention.
- a layer sequence consisting of is deposited on a monocrystalline substrate 201 in an epitaxial process
- This layer sequence creates an electrically conductive layer stack in which the charge carriers electrically injected via contacts are preferably injected into the light emitters 202 reach and generate light emission there, which compose the non-copyable light pattern 203.
- FIG. 3 shows a second embodiment according to the invention of the non-duplicable key 101 of the access system, in which the light emitters 303 occur in spatially separate groups.
- the groups can be embedded in a layer stack, which consists of electrically conductive layers 201a, 201b, 201c, which are arranged on a substrate 201.
- Each group of light emitters 303 is unique in terms of relative position in key 101 as well as other properties such as e.g. B. intensity and wavelength generated statistically and distinguishable.
- FIG. 4 shows a third embodiment according to the invention of the non-duplicateable key 101 of the access system, in which the area in which the light emitters 404 are generated statistically is defined by modifying the surface of the second electrically conductive layer 201b.
- the key 101 can consist of a layer stack consisting of three electrically conductive layers 201a, 201b, 201c, which are arranged on a substrate 201.
- steps of the method according to the invention can be carried out in the order given. However, they can also be executed in a different order, as far as this is technically reasonable.
- the method according to the invention can be carried out in such a way that no further steps are carried out. In principle, however, further steps can also be carried out, including those which are not mentioned.
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- Engineering & Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Theoretical Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Computer Hardware Design (AREA)
- Software Systems (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112022001647.7T DE112022001647A5 (en) | 2021-03-23 | 2022-03-08 | Optoelectronic access system and method for producing a non-duplicable key |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021107136.4A DE102021107136A1 (en) | 2021-03-23 | 2021-03-23 | Optoelectronic entry system and method for producing a non-duplicate key |
DE102021107136.4 | 2021-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2022200038A2 true WO2022200038A2 (en) | 2022-09-29 |
WO2022200038A3 WO2022200038A3 (en) | 2022-11-17 |
Family
ID=81328392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2022/055939 WO2022200038A2 (en) | 2021-03-23 | 2022-03-08 | Optoelectronic access system and method for producing a non-duplicatable key |
Country Status (2)
Country | Link |
---|---|
DE (2) | DE102021107136A1 (en) |
WO (1) | WO2022200038A2 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5283431A (en) * | 1992-02-04 | 1994-02-01 | Rhine Raymond J | Optical key security access system |
US7750425B2 (en) * | 2005-12-16 | 2010-07-06 | The Trustees Of Princeton University | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier |
US8462322B2 (en) * | 2008-10-08 | 2013-06-11 | International Business Machines Corporation | Prismatic lock and key security |
TW201250099A (en) | 2011-06-03 | 2012-12-16 | Lattice Energy Technology Corp | Optical key |
GB2561590A (en) * | 2017-04-19 | 2018-10-24 | Quantum Base Ltd | A photonic device |
US11131121B2 (en) * | 2019-05-25 | 2021-09-28 | Konstantin KHLOPKOV | Highly secure optical key access control system |
-
2021
- 2021-03-23 DE DE102021107136.4A patent/DE102021107136A1/en not_active Withdrawn
-
2022
- 2022-03-08 WO PCT/EP2022/055939 patent/WO2022200038A2/en active Application Filing
- 2022-03-08 DE DE112022001647.7T patent/DE112022001647A5/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DE102021107136A1 (en) | 2022-09-29 |
DE112022001647A5 (en) | 2024-01-11 |
WO2022200038A3 (en) | 2022-11-17 |
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