WO2022192005A1 - Organic photodetectors for in-cell optical sensing - Google Patents
Organic photodetectors for in-cell optical sensing Download PDFInfo
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- WO2022192005A1 WO2022192005A1 PCT/US2022/017842 US2022017842W WO2022192005A1 WO 2022192005 A1 WO2022192005 A1 WO 2022192005A1 US 2022017842 W US2022017842 W US 2022017842W WO 2022192005 A1 WO2022192005 A1 WO 2022192005A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
- H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
Definitions
- the described embodiments relate generally to electronic displays and, more particularly, to organic light-emitting diode (OLED) displays in which one or more organic photodetectors (e.g ., organic photodiodes) are integrated for in-cell optical sensing.
- OLED organic light-emitting diode
- In-cell optical sensing is the sensing of light using optical photodetectors (OPDs) that are integrated with a display.
- OPDs optical photodetectors
- In-cell optical sensing may be used in various applications, such as biometric sensing (e.g., face, fingerprint, or retina sensing), OLED illumination sensing, touch sensing, ambient light sensing, or health sensing.
- OPDs may be configured to sense visible light, infrared light, or other ranges of electromagnetic radiation wavelengths.
- Embodiments of the systems, devices, methods, and apparatus described in the present disclosure are directed to in-cell optical sensing and, more particularly, to the integration of OPDs into an OLED display.
- the present disclosure describes an OLED display.
- the OLED display may include an array of OLED pixels and an array of OPD pixels.
- An OLED pixel in the array of OLED pixels may include an OLED hole transport layer (HTL), an OLED electron transport layer (ETL), and an emissive layer (EML) positioned between the OLED HTL and the OLED ETL.
- An OPD pixel in the array of OPD pixels may include the OLED HTL, the OLED ETL, and an electron donor material positioned between the OLED HTL and the OLED ETL.
- the OLED ETL may function as an electron acceptor material for the OPD pixel.
- the present disclosure describes a display.
- the display may include an OLED pixel and an OPD pixel (and may include many of each).
- the OLED pixel may include an OLED HTL and an OLED ETL.
- the OPD pixel may include the OLED HTL, the OLED ETL, an electron donor material positioned between the OLED HTL and the OLED ETL, an electron acceptor material positioned between the OLED HTL and the OLED ETL, and an intermediate material.
- the electron acceptor material and the electron donor material may be positioned on a first side of the intermediate material, and the OLED ETL may be positioned on a second side of the intermediate material.
- the present disclosure describes an OPD pixel.
- the OPD pixel may include an OLED HTL, an OLED ETL, an electron donor material positioned between the OLED HTL and the OLED ETL and including a p-dopant material, and an electron acceptor material positioned between the OLED HTL and the OLED ETL and including an n-dopant material.
- the electron donor material including the p-dopant material and the electron acceptor material including the n-dopant material may form a p-n junction.
- the present disclosure describes an OPD pixel.
- the OPD pixel may include an OLED HTL, an OLED ETL, an electron donor material positioned between the OLED HTL and the OLED ETL, an electron acceptor material positioned between the OLED HTL and the OLED ETL, and a first interface between the electron acceptor material and the OLED ETL.
- the first interface may include an organic n- dopant material.
- the OPD pixel may also include a second interface between the OLED HTL and the electron donor layer.
- the second interface may include an organic p-dopant material.
- FIGs. 1 A and 1 B show an example of a device having an array of photodetectors integrated with a display
- FIG. 2 shows an example plan view of a portion of an OLED display
- FIG. 3 shows examples of an OLED pixel, an organic solar cell, and an OPD pixel
- FIG. 4 shows a first example embodiment of an OPD pixel
- FIG. 5 shows a second example embodiment of an OPD pixel
- FIG. 6 shows a third example embodiment of an OPD pixel
- FIG. 7 shows a fourth example embodiment of an OPD pixel
- FIGs. 8A and 8B show doping of an electron donor material and an electron acceptor material
- FIG. 9 shows a fifth example embodiment of an OPD pixel
- FIG. 10 shows an example electrical block diagram of an electronic device.
- cross-hatching or shading in the accompanying figures is generally provided to clarify the boundaries between adjacent elements and also to facilitate legibility of the figures. Accordingly, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference or requirement for particular materials, material properties, element proportions, element dimensions, commonalities of similarly illustrated elements, or any other characteristic, attribute, or property for any element illustrated in the accompanying figures.
- An OPD pixel, or an array of OPD pixels may be integrated into an OLED display while forming the display (e.g ., in parallel with forming OLED pixels).
- the OPD pixel(s) may be integrated into the display after the display is formed (e.g., after the OLED pixels are formed). While the latter may enable the OPD pixel(s) to be optimized largely independently of the OLED pixels, such optimization may at times conflict with optimizing the OLED pixels. Therefore, to preserve the integrity of a display as much as possible, the systems, devices, methods, and apparatus described herein include OPD pixels that are formed while forming an OLED display.
- the OPD pixels described herein may be formed such that they share the cathode, OLED HTL, or OLED ETL structures (e.g., materials and layers) used by OLED pixels.
- the OPD pixels may also share other structures used by OLED pixels, such as hole injection layer (HIL), hole blocking layer (HBL), electron injection layer (EIL), or electron blocking layer (EBL).
- HIL hole injection layer
- HBL hole blocking layer
- EIL electron injection layer
- EBL electron blocking layer
- FIGs. 1 A-10 These and other aspects are described with reference to FIGs. 1 A-10. However, those skilled in the art will readily appreciate that the detailed description given herein with respect to these figures is for explanatory purposes only and should not be construed as limiting.
- FIGs. 1 A and 1 B show an example of a device 100 having an array of photodetectors integrated with a display, such as an array of OPD pixels integrated with an array of OLED pixels.
- the device s dimensions and form factor, including the ratio of the length of its long sides to the length of its short sides, suggest that the device 100 is a mobile phone ( e.g ., a smartphone).
- the device 100 could alternatively be any portable electronic device including, for example, a mobile phone, tablet computer, portable computer, portable music player, health monitor device, portable terminal, vehicle navigation system, robot navigation system, wearable device (e.g., a head-mounted display (HMD), glasses, watch, earphone or earbud, and so on), or other portable or mobile device.
- the device 100 could also be a device that is semi-permanently located (or installed) at a single location.
- FIG. 1 A shows a front isometric view of the device 100 and FIG.
- the device 100 may include a housing 102 that at least partially surrounds a display 104
- the housing 102 may include or support a front cover 106 and/or a rear cover 108
- the front cover 106 may be positioned over the display 104 and may provide a window through which the display 104 may be viewed.
- the display 104 may be attached to (or abut) the housing 102 and/or the front cover 106.
- the housing 102 and/or other components of the device 100 may have an alternative configuration.
- the display 104 may include one or more light-emitting elements and may be configured, for example, as an organic light-emitting diode (OLED) display.
- the display 104 or front cover 106 may include, or be associated with, one or more touch and/or force sensors that are configured to detect a touch and/or a force applied to a surface of the front cover 106.
- the various components of the housing 102 may be formed from the same or different materials.
- the sidewall 118 may be formed using one or more metals (e.g ., stainless steel), polymers ( e.g ., plastics), ceramics, or composites ( e.g ., carbon fiber).
- the sidewall 118 may be a multi-segment sidewall including a set of antennas.
- the antennas may form structural components of the sidewall 118.
- the antennas may be structurally coupled (to one another or to other components) and electrically isolated (from each other or from other components) by one or more non-conductive segments of the sidewall 118.
- the front cover 106 may be formed, for example, using one or more of glass, a crystal (e.g., sapphire), or a transparent polymer (e.g., plastic) that enables a user to view the display 104 through the front cover 106.
- a portion of the front cover 106 e.g., a perimeter portion of the front cover 106 may be coated with an opaque ink to obscure components included within the housing 102.
- the rear cover 108 may be formed using the same material(s) that are used to form the sidewall 118 or the front cover 106.
- the rear cover 108 may be part of a monolithic element that also forms the sidewall 118 (or in cases where the sidewall 118 is a multi-segment sidewall, those portions of the sidewall 118 that are non-conductive).
- all of the exterior components of the housing 102 may be formed from a transparent material, and components within the device 100 may or may not be obscured by an opaque ink or opaque structure within the housing 102.
- the front cover 106 may be mounted to the sidewall 118 to cover an opening defined by the sidewall 118 (i.e., an opening into an interior volume in which various electronic components of the device 100, including the display 104, may be positioned).
- the front cover 106 may be mounted to the sidewall 118 using fasteners, adhesives, seals, gaskets, or other components.
- a display stack or device stack including the display 104 may be attached (or abutted) to an interior surface of the front cover 106 and extend into the interior volume of the device 100.
- the stack may include a touch sensor (e.g ., a grid of capacitive, resistive, strain-based, ultrasonic, or other types of touch sensing elements), or other layers of optical, mechanical, electrical, or other types of components.
- the touch sensor (or part of a touch sensor system) may be configured to detect a touch applied to an outer surface of the front cover 106 (e.g., to a display surface of the device 100).
- a force sensor (or part of a force sensor system) may be positioned within the interior volume below and/or to the side of the display 104 (and in some cases within the device stack).
- the force sensor (or force sensor system) may be triggered in response to the touch sensor detecting one or more touches on the front cover 106 (or a location or locations of one or more touches on the front cover 106), and may determine an amount of force associated with each touch, or an amount of force associated with the collection of touches as a whole.
- the force sensor (or force sensor system) may trigger operation of the touch sensor (or touch sensor system) in response to detecting a force on the front cover 106.
- the force sensor (or force sensor system) may be used to determine the locations of touches on the front cover 106, and may thereby function as a touch sensor (or touch sensor system).
- the device 100 may include various other components.
- the front of the device 100 may include one or more front-facing cameras 110, speakers 112, microphones, or other components 114 (e.g., audio, imaging, and/or sensing components) that are configured to transmit or receive signals to/from the device 100.
- a front-facing camera 110 alone or in combination with other sensors, may be configured to operate as a bio-authentication or facial recognition sensor.
- the device 100 may also include various input and/or output devices 116 that are accessible from the front surface (or display surface) of the device 100.
- the front-facing camera 110, I/O devices 116, and/or other sensors of the device 100 may be integrated with a display stack of the display 104 and moved under the display 104.
- an array of OPD pixels may be interspersed with, or positioned around, an array of OLED pixels included in the display 104.
- the OPD pixels may be used as a camera (e.g., a visible light camera and/or an infrared camera) capable of acquiring an image of one or more of an environment of the device 100, an image of a user (e.g., the user’s face, finger, or retina), an image of dust or dirt that is on or near the front cover 106, a depth map of objects within a field of view, indicia on an internal or external surface of the front cover 106, a scattered or reflected portion of light emitted by the display or a separate set of one or more light emitters, and so on.
- a camera e.g., a visible light camera and/or an infrared camera
- the device 100 may also include buttons or other input devices positioned along the sidewall 118 and/or on a rear surface of the device 100.
- a volume button or multipurpose button 120 may be positioned along the sidewall 118, and in some cases may extend through an aperture in the sidewall 118.
- the sidewall 118 may include one or more ports 122 that allow air, but not liquids, to flow into and out of the device 100.
- one or more sensors may be positioned in or near the port(s) 122.
- an ambient pressure sensor, ambient temperature sensor, internal/external differential pressure sensor, gas sensor, particulate matter sensor, or air quality sensor may be positioned in or near a port 122.
- the rear surface of the device 100 may include a rearfacing camera 124 or other optical sensor (see FIG. 1 B).
- a flash or light source 126 may also be positioned along the rear of the device 100 ( e.g ., near the rear-facing camera).
- the rear surface of the device 100 may include multiple rear-facing cameras.
- the camera(s), microphone(s), pressure sensor(s), temperature sensor(s), biometric sensor(s), button(s), proximity sensor(s), touch sensor(s), force sensor(s), particulate matter or air quality sensor(s), and so on of the device 100 may form parts of various sensor systems.
- FIG. 2 shows an example plan view of a portion of an OLED display 200, which display 200 is one example of the display described with reference to FIGs. 1 A-1 B.
- the display 200 includes an array of OLED pixels 202, 204, 206 and an array of OPD pixels 208.
- the OPD pixels 208 are interspersed with the OLED pixels 202, 204,
- the OPD pixels 208 may be positioned around a periphery of the OLED pixels 202, 204, 206, or grouped together in (or concentrated in greater numbers in) one or more particular regions of the array of OLED pixels 202, 204, 206.
- the OLED pixels 202, 204, 206 may include red OLED pixels 202, green OLED pixels 204, and blue OLED pixels 206, or OLED pixels defining other color acquisition schemes. Although the OLED pixels 202, 204, 206 and OPD pixels 208 appear in the display 200 in equal numbers, the OLED pixels 202, 204, 206 and OPD pixels 208 may have equal or different densities by number and equal or different densities by area. In some embodiments, the OLED pixels 202, 204, 206 and OPD pixels 208 may be arranged in accordance with a Bayer color filter pattern, with an OPD pixel 208 replacing one of the green pixels in some or all instances of the Bayer pattern.
- FIG. 3 shows examples of an OLED pixel 300, an organic solar cell 302, and an OPD pixel 304.
- the OLED pixel 300 is an example of the OLED pixels described with reference to FIGs. 1 A-1B and 2.
- the OPD pixel 304 is an example of the OPD pixels described with reference to FIGs. 1A-1 B and 2.
- the OLED pixel 300 may include an emissive layer (EML) 306.
- EML emissive layer
- the emissive layer 306 may have a first surface (or upper surface) bounded by an OLED ETL 308, and a second surface (or lower surface) bounded by an OLED HTL 310 ( i.e ., the emissive layer 306 may be positioned between the OLED ETL 308 and the OLED HTL 310).
- a cathode 312 may be disposed adjacent a surface of the OLED ETL 308, on a side of the OLED ETL 308 opposite a side of the OLED ETL 308 on which the emissive layer 306 is positioned.
- An anode 314 may be disposed adjacent a surface of the OLED HTL 310, on a side of the OLED HTL 310 opposite a side of the OLED ETL 308 on which the emissive layer 306 is positioned.
- the other materials may include a patterned prime layer, disposed between the OLED HTL 310 and the emissive layer 306.
- the composition of the emissive layer 306 may differ for red, blue, green, or other-colored pixels. In other cases, the composition of the emissive layer 306 may be the same for red, blue, green, and other-colored pixels, and the ranges of wavelengths to which different OLED pixels respond may be controlled by different color filters positioned on or over the light-receiving side of the OLED pixel.
- an OLED display may be formed by depositing an anode layer (including the anode 314) on a substrate ( e.g ., on an epitaxial stack including pixel circuitry), and then successively depositing the OLED HTL 310, the emissive layer 306, the OLED ETL 308, and the cathode 312 as additional layers. Some of these layers may be patterned and etched to define OLED pixels.
- the organic solar cell 302 may include a set of photoactive materials (or layers) 316 capable of absorbing light within a range of electromagnetic radiation wavelengths.
- a cathode 318 may be disposed on one side of the set of photoactive materials 316, and an anode 320 may be disposed on the other side of the set of photoactive materials 316 (i.e., the cathode 318 and anode 320 may be disposed on opposite sides of the set of photoactive layers 316).
- the organic solar cell 302 may be integrated into an array of the OLED pixels 300 (e.g., into an OLED display) in various ways. In some cases, it may be advantageous (e.g., cheaper, less disruptive to the OLED display, and so on) to preserve as many layers of the OLED pixel structure as possible.
- the OPD pixel 304 integrates the organic solar cell 302 into the OLED pixel 300 by replacing the emissive layer 306 (and possibly other layers, such as layers patterned for OLED operation (e.g., a prime layer)) with a set of photoactive layers 322, and retaining the layers of the OLED pixel 300 that define the anode 314, the OLED HTL 310, the OLED ETL 308, and the cathode 312.
- the emissive layer 306 and possibly other layers, such as layers patterned for OLED operation (e.g., a prime layer)
- layers patterned for OLED operation e.g., a prime layer
- the OLED ETL 308 may be replaced by an OLED ETL in combination with one or more of an OLED EIL, an OLED EBL, or other layers.
- the OLED HTL 310 may be replaced by an OLED HTL in combination with one or more of an OLED HIL, an OLED HBL, or other layers.
- FIG. 4 shows a first example embodiment of an OPD pixel 400.
- the OPD pixel 400 may be included in the display 104 described with reference to FIGs. 1 A- 1 B, or in the array of OPD pixels described with reference to FIG. 2.
- the OPD pixel 400 may also be the OPD pixel described with reference to FIG. 3.
- the OPD pixel 400 includes an OLED HTL 402, an OLED ETL 404, an electron donor material (or electron donor layer) 406, and an electron acceptor material (or electron acceptor layer) 408.
- the electron donor material 406 and the electron acceptor material 408 may be stacked with the OLED HTL 402 and the OLED ETL 404, with both the electron donor material 406 and the electron acceptor material 408 positioned between the OLED HTL 402 and the OLED ETL 404, and with the electron acceptor material 408 positioned between the electron donor material 406 and the OLED ETL 404.
- the electron donor material 406 and the electron acceptor material 408 may be mixed together in a random or intentional way to form a bulk heterojunction.
- the electron donor material 406 and the electron acceptor material 408 are an example of the photoactive layers described with reference to FIG. 3.
- Examples of the electron donor material 406 include acenes, acene derivatives, or phtalocyanine derivatives.
- Examples of the electron acceptor material 408 include fullerenes, fullerene derivatives, rylene diimides, or rylene diimide derivatives.
- each of the OLED HTL 402, the electron donor material 406, the electron acceptor material 408, and the OLED ETL 404 has a lowest unoccupied molecular orbital (LUMO) energy (a conduction band energy) and a highest occupied molecular orbital (HOMO) energy (a valence band energy).
- LUMO unoccupied molecular orbital
- HOMO highest occupied molecular orbital
- , and 2) an electron barrier (D b ) between the LUMO energy of the electron acceptor material 408 (LUM03) and the LUMO energy of the OLED ETL 404 (LUM04), where D e ⁇ LUM03 - LUM04 ⁇ .
- Positive charges (holes) may have difficulty crossing the hole barrier, and negative charges (electrons) may have difficulty crossing the electron barrier.
- the hole barrier (D L ) and the electron barrier (D b ) can cause inefficient charge extraction from the OPD pixel 400.
- Inefficient charge extraction leads to disadvantages such as low device efficiency, insufficient maximum achievable currents, and a low signal-to-noise ratio (SNR).
- SNR signal-to-noise ratio
- FIG. 5-9 show various alternative configurations of the photoactive materials (or layers), which alternative configurations can reduce the hole barrier and/or electron barrier shown for the OPD pixel 400.
- FIG. 5 shows a second example embodiment of an OPD pixel 500.
- the OPD pixel 500 may be included in the display 104 described with reference to FIGs. 1A-1 B, or in the array of OPD pixels described with reference to FIG. 2.
- the OPD pixel 500 may also be the OPD pixel described with reference to FIG. 3.
- the OPD pixel 500 differs from the OPD pixel described with reference to FIG. 4 in that the OLED ETL 504 additionally functions as the electron acceptor material for the OPD pixel 500. That is, a layer that already exists in an OLED stack is used as the electron acceptor material for the OPD pixel 500.
- the OPD pixel 500 includes an OLED HTL 502, an OLED ETL 504, and an electron donor material (e.g., an electron donor layer) 506.
- the electron donor material 506 may be stacked with the OLED HTL 502 and the OLED ETL 504, with the electron donor material 506 positioned between the OLED HTL 502 and the OLED ETL 504.
- Examples of the electron donor material 506 include acenes, acene derivatives, or phtalocyanine derivatives.
- the electron barrier (D b ) described with reference to FIG. 4 is removed.
- the electron barrier may be reduced but not removed.
- the LUMO energy of the electron donor material 506 should be energetically shallower than the LUMO energy of the OLED ETL 504 (LUM03). In some cases, the LUMO energy of the electron donor material 506 (LUM02) may also be energetically shallower than the LUMO energy of the OLED HTL 502 (LUM01). The HOMO energy of the electron donor material 506 (HOM02) may be energetically shallower than the HOMO energy of the OLED ETL 504 (HOM03), to prevent back-transfer and recombination of electron/hole pairs.
- the HOMO energy of the electron donor material 506 may be energetically shallower than, and in some cases approximately equal to, the HOMO energy of the OLED HTL 502 (HOM01), to provide a small hole barrier (A h ).
- approximately equal HOMO energies are defined as HOMO energies less than or equal to 0.3 electron Volts (eV).
- eV electron Volts
- the oscillator strength of the electron donor material 506 should be high, to ensure high absorption of electromagnetic radiation within a spectral region of interest (in contrast to the oscillator strength of the OLED ETL 504, which is typically low).
- a high oscillator strength is defined herein as greater than 0.1 , and may be provided by a material that strongly interacts with light
- a low oscillator strength is defined herein as lower than 0.1 , and may be provided by a material that poorly interacts with light.
- the absorption of the electron donor material 506 may be well-matched to a spectral region of interest.
- an OPD pixel configured to detect electromagnetic radiation in the visible part of the electromagnetic radiation spectrum should have an absorption band including, or including and limited to, the visible part of the electromagnetic radiation spectrum.
- FIG. 6 shows a third example embodiment of an OPD pixel 600.
- the OPD pixel 600 may be included in the display 104 described with reference to FIGs. 1 A- 1 B, or in the array of OPD pixels described with reference to FIG. 2.
- the OPD pixel 600 may also be the OPD pixel described with reference to FIG. 3.
- the OPD pixel 600 differs from the OPD pixel described with reference to FIG. 4 in that it includes an energetic staircase for charge extraction. That is, an additional one or more materials (e.g ., layers of material) are added to the OPD pixel 600, between an electron acceptor material 608 and the OLED ETL 604. The additional material(s) subdivide an aggregate electron barrier between the electron acceptor material 608 and the OLED ETL 604 into a set of smaller electron barriers.
- an additional one or more materials e.g ., layers of material
- the OPD pixel 600 includes an OLED HTL 602, an OLED ETL 604, an electron donor material (or electron donor layer) 606, an electron acceptor material (or electron acceptor layer) 608, and one or more intermediate materials (shown as one intermediate material 610 in the OPD pixel 600).
- the electron donor material 606 and the electron acceptor material 608 may be stacked with the OLED HTL 602 and the OLED ETL 604, with both the electron donor material 606 and the electron acceptor material 608 positioned between the OLED HTL 602 and the OLED ETL 604, and with the electron acceptor material 608 positioned between the electron donor material 606 and the OLED ETL 604 ( e.g ., in a stacked configuration).
- the electron donor material 606 and the electron acceptor material 608 may be mixed together in a random or intentional way to form a bulk heterojunction.
- the intermediate material (or layer) 610 may be positioned between the electron acceptor material 608 and the OLED ETL 604 (or between the heterojunction and the OLED ETL 604), with the electron donor material 606 and the electron acceptor material 608 positioned on a first side of the intermediate material 610, and the OLED ETL 604 positioned on a second side of the intermediate material 610.
- the additional intermediate materials may be positioned between the intermediate material 610 and the OLED ETL 604.
- Examples of the electron donor material 606 include acenes, acene derivatives, or phtalocyanine derivatives.
- Examples of the electron acceptor material 608 include fullerenes, fullerene derivatives, rylene diimides, or rylene diimide derivatives.
- Examples of the intermediate material 610 include tri-aryl amine derivatives.
- the electron barrier (D b ) described with reference to FIG. 4 is subdivided into a set of smaller electron barriers (e.g., D b1 , D b2 ).
- additional intermediate materials e.g., a second intermediate material
- additional and smaller electron barriers may be formed.
- Different intermediate materials, when provided, may include different materials.
- the LUMO energy of the intermediate material 610 should be energetically deeper than the LUMO energy of the electron acceptor material 608 (LUM03), and energetically shallower than the LUMO energy of the OLED ETL 604 (LUM05).
- the intermediate material(s) may all have LUMO energies between the LUMO energy of the electron acceptor material 608 and the LUMO energy of the OLED ETL 604.
- the HOMO energy of the intermediate material 610 need not have any particular relationship with the HOMO energy of the electron acceptor material 608 or the OLED ETL 604.
- the HOMO energy of the electron donor material 606 may be energetically shallower than, and in some cases approximately equal to, the HOMO energy of the OLED HTL 602 (H0M01), to provide a small hole barrier (A h ).
- approximately equal HOMO energies are defined as HOMO energies less than or equal to 0.3 electron Volts (eV).
- the relationships between the LUMO and HOMO energies of different materials may be tuned through the choice of electron donor material 606, electron acceptor material 608, and intermediate material(s) 610.
- charge transfer within the OPD pixel 600 may occur by means of a tunneling effect. For example, an electron may tunnel from LUM03 to LUM04, and then from LUM04 to LUM05, if the electron barriers between adjacent materials are not too large.
- the oscillator strength of the intermediate material(s) 610 can be low, since the electron donor material 606 and the electron acceptor material 608 are responsible for the efficient absorption of electromagnetic radiation in a spectral region of interest.
- FIG. 7 shows a fourth example embodiment of an OPD pixel 700.
- the OPD pixel 700 may be included in the display 104 described with reference to FIGs. 1 A- 1 B, or in the array of OPD pixels described with reference to FIG. 2.
- the OPD pixel 700 may also be the OPD pixel described with reference to FIG. 3.
- the OPD pixel 700 differs from the OPD pixel described with reference to FIG. 4 in that the energies of its electron donor material and electron acceptor material are shifted via doping to form a p-n junction.
- the OPD pixel 700 includes an OLED HTL 702, an OLED ETL 704, an electron donor material (or electron donor layer) 706, and an electron acceptor material (or electron acceptor layer) 708.
- the electron donor material 706 and the electron acceptor material 708 may be stacked with the OLED HTL 702 and the OLED ETL 704, with both the electron donor material 706 and the electron acceptor material 708 positioned between the OLED HTL 702 and the OLED ETL 704, and with the electron acceptor material 708 positioned between the electron donor material 706 and the OLED ETL 704.
- the electron donor material 706 and the electron acceptor material 708 may be mixed together in a random or intentional way to form a bulk heterojunction.
- the electron donor material 706 may include a p-dopant material (e.g., an organic p-dopant material may be mixed with or injected into a host electron donor material)), and the electron acceptor material 708 may include an n-dopant material (e.g., an organic n-dopant material may be mixed with or injected into a host electron acceptor material).
- a p-dopant material e.g., an organic p-dopant material may be mixed with or injected into a host electron donor material
- the electron acceptor material 708 may include an n-dopant material (e.g., an organic n-dopant material may be mixed with or injected into a host electron acceptor material).
- Examples of the electron donor material 706 include acenes, acene derivatives, or phtalocyanine derivatives.
- Examples of the electron acceptor material 708 include fullerenes, fullerene derivatives, rylene diimides, or rylene diimide derivatives.
- Examples of the p-dopant material include tetracyanoquinodimethanes and tetracyanoquinodimethane derivatives.
- Examples of the n-dopant material include certain alkali metals and certain lanthanides.
- the energy shifts and resultant p-n junction provided by doping the electron donor material 706 and the electron acceptor material 708 facilitate charge separation; reduce the hole barrier (A h ) between the HOMO energy of the electron donor material 706 (HOM02) and the HOMO energy of the OLED HTL 702 (HOM01); and reduce the electron barrier (D b ) between the LUMO energy of the electron acceptor material 708 (LUM03) and the LUMO energy of the OLED ETL 704 (LUM04).
- each of the electron donor material 706, the electron acceptor material 708, the p-dopant material 800 and the n-dopant material 802 may have a LUMO energy and a HOMO energy.
- the p-dopant material 800 may be selected such that the LUMO energy of the p-dopant material 800 is energetically deeper than the HOMO energy of the electron donor material 706, and the n- dopant material 802 may be selected such that the HOMO energy of the n-dopant material 802 is energetically shallower than the LUMO energy of the electron acceptor material 708.
- an interlayer 710 may be positioned between the electron donor material 706 and the electron acceptor material 708 (or alternatively, within a mix of the electron donor material 706 and the electron acceptor material 708).
- the interlayer 710 may be used to reduce recombination of separated electrons and holes.
- the interlayer 710 may be relatively thin in comparison to the electron donor material 706 and the electron acceptor material 708.
- the oscillator strength of the electron donor material 706 and the electron acceptor material 708 should be high.
- FIG. 9 shows a fifth example embodiment of an OPD pixel 900.
- the OPD pixel 900 may be included in the display 104 described with reference to FIGs. 1 A- 1 B, or in the array of OPD pixels described with reference to FIG. 2.
- the OPD pixel 900 may also be the OPD pixel described with reference to FIG. 3.
- the OPD pixel 900 differs from the OPD pixel described with reference to FIG. 4 in that the energies of its electron donor layer and electron acceptor layer are bent via one or two doped interfaces 910, 912.
- the OPD pixel 900 includes an OLED HTL 902, an OLED ETL 904, an electron donor material (or electron donor layer) 906, an electron acceptor material (or electron acceptor layer) 908, a first interface 910, and a second interface 912.
- the electron donor material 906 and the electron acceptor material 908 may be stacked with the OLED HTL 902 and the OLED ETL 904, with both the electron donor material 906 and the electron acceptor material 908 positioned between the OLED HTL 902 and the OLED ETL 904, and with the electron acceptor material 908 positioned between the electron donor material 906 and the OLED ETL 904.
- the first interface 910 may be disposed between the OLED HTL 902 and the electron donor material 906, and the second interface 912 may be disposed between the electron acceptor material 908 and the OLED ETL 904.
- the electron donor material 906 and the electron acceptor material 908 may be mixed together in a random or intentional way and connected to both the first interface 910 and the second interface 912.
- Examples of the electron donor material 706 include acenes, acene derivatives, or phtalocyanine derivatives.
- Examples of the electron acceptor material 708 include fullerenes, fullerene derivatives, rylene diimides, or rylene diimide derivatives.
- Examples of the p-dopant material include tetracyanoquinodimethanes and tetracyanoquinodimethane derivatives.
- Examples of the n-dopant material include certain alkali metals and certain lanthanides.
- the first interface 910 may include an organic p-dopant material and bend an energy band of the first interface 910 to facilitate charge extraction (hole extraction) via the OLED HTL 902.
- the second interface 912 may include an organic n-dopant material and bend an energy band of the second interface 912 to facilitate charge extraction (electron extraction) via the OLED ETL 904.
- the band bending provided by the doped first and second interfaces 910, 912 reduces the D L and D e energetic barriers described with reference to FIG. 4.
- the first interface 910 may bend a HOMO energy of the electron donor material 906 (HOM02) toward the HOMO energy of the OLED HTL 902 (HOM01).
- the second interface 912 may bend a LUMO energy of the electron acceptor material 908 (LUM03) toward the LUMO energy of the OLED ETL 904 (LUM04).
- the OPD pixel 900 may include one or the other, but not both, of the first interface 910 and the second interface 912.
- the OPD pixel 900 may only include an interface that removes (or reduces) the largest of the energetic barriers (e.g ., the OPD pixel 900 may only include the second interface 912, which in the OPD pixel 900 reduces the D e energetic barrier.
- Each of the first and second interfaces 910, 912 may be a host-guest system or a self-doped neat material, with the first and second interfaces 910, 912 having the same or different constructions (e.g., both may be host-guest systems, both may be self-doped neat materials, or one may be a host-guest system and the other may be a self-doped neat material).
- the first interface 910 may include a doped portion of the electron donor material 906, and the second interface 912 may include a doped portion of the electron acceptor material 908.
- the entirety of the electron donor material 906 or electron acceptor material 908 may be doped, with the doping having a uniform or variable concentration.
- the first interface 910 may be a first intermediate material (i.e ., a material apart from the OLED HTL 902 and the electron donor material 906) including a p-dopant material
- the second interface 912 may be a second intermediate material (i.e., a material apart from the electron acceptor material 908 and the OLED ETL 904) including an n-dopant material.
- an interface between an OLED HTL and an electron donor material may be doped, and an interface between an OLED ETL and an electron acceptor material (or between an OLED ETL and a bulk heterojunction) may be provided with an energetic staircase, or vice versa.
- the OLED HTLs described herein may be replaced or supplemented with one or more of an OLED HTL, an OLED HIL, an OLED HBL, or other materials or layers.
- the OLED ETLs described herein may be replaced or supplemented with one or more of an OLED ETL, an OLED EIL, an OLED EBL, or other materials or layers.
- FIG. 10 shows a sample electrical block diagram of an electronic device 1000, which electronic device may in some cases take the form of the device described with reference to FIGs. 1 A-1B and/or include one or more of the OLED pixels and/or OPD pixels described with reference to any of FIGs. 1 A-9.
- the electronic device 1000 may include a display 1002 (e.g ., a light-emitting display), a processor 1004, a power source 1006, a memory 1008 or storage device, a sensor system 1010, or an input/output (I/O) mechanism 1012 (e.g., an input/output device, input/output port, or haptic input/output interface).
- the processor 1004 may control some or all of the operations of the electronic device 1000.
- the processor 1004 may communicate, either directly or indirectly, with some or all of the other components of the electronic device 1000.
- a system bus or other communication mechanism 1014 can provide communication between the display 1002, the processor 1004, the power source 1006, the memory 1008, the sensor system 1010, and the I/O mechanism 1012.
- the processor 1004 may be implemented as any electronic device capable of processing, receiving, or transmitting data or instructions, whether such data or instructions is in the form of software or firmware or otherwise encoded.
- the processor 1004 may include a microprocessor, a central processing unit (CPU), an application-specific integrated circuit (ASIC), a digital signal processor (DSP), a controller, or a combination of such devices.
- the term “processor” is meant to encompass a single processor or processing unit, multiple processors, multiple processing units, or other suitably configured computing element or elements.
- the components of the electronic device 1000 can be controlled by multiple processors.
- select components of the electronic device 1000 e.g ., the sensor system 1010
- other components of the electronic device 1000 e.g., the display 1002
- the first and second processors may or may not be in communication with each other.
- the power source 1006 can be implemented with any device capable of providing energy to the electronic device 1000.
- the power source 1006 may include one or more batteries or rechargeable batteries.
- the power source 1006 may include a power connector or power cord that connects the electronic device 1000 to another power source, such as a wall outlet.
- the memory 1008 may store electronic data that can be used by the electronic device 1000.
- the memory 1008 may store electrical data or content such as, for example, audio and video files, documents and applications, device settings and user preferences, timing signals, control signals, and data structures or databases.
- the memory 1008 may include any type of memory.
- the memory 1008 may include random access memory, read-only memory, Flash memory, removable memory, other types of storage elements, or combinations of such memory types.
- the electronic device 1000 may also include one or more sensor systems 1010 positioned almost anywhere on the electronic device 1000.
- the sensor system(s) 1010 may be configured to sense one or more types of parameters, such as but not limited to, light; touch; force; heat; movement; relative motion; biometric data (e.g., biological parameters) of a user; particulate matter concentration, air quality; proximity; position; connectedness; and so on.
- the sensor system(s) 1010 may include a heat sensor, a position sensor, a light or optical sensor, an accelerometer, a pressure transducer, a gyroscope, a magnetometer, a health monitoring sensor, a particulate matter sensor, an air quality sensor, and so on.
- the one or more sensor systems 1010 may utilize any suitable sensing technology, including, but not limited to, magnetic, capacitive, ultrasonic, resistive, optical, acoustic, piezoelectric, or thermal technologies.
- the I/O mechanism 1012 may transmit or receive data from a user or another electronic device.
- the I/O mechanism 1012 may include the display 1002, a touch sensing input surface, a crown, one or more buttons (e.g., a graphical user interface “home” button), one or more cameras (including an under-display camera and/or one or more OPD pixels, as described with reference to FIGs. 1 A-9), one or more microphones or speakers, one or more ports such as a microphone port, and/or a keyboard.
- the I/O mechanism 1012 may transmit electronic signals via a communications interface, such as a wireless, wired, and/or optical communications interface. Examples of wireless and wired communications interfaces include, but are not limited to, cellular and Wi-Fi communications interfaces.
- biometric data e.g ., face, fingerprint, or retina data
- this gathered data may include personal information data that uniquely identifies or can be used to identify, locate, or contact a specific person.
- personal information data can include, for example, biometric data (e.g., fingerprint data) and data linked thereto (e.g., demographic data, location-based data, telephone numbers, email addresses, home addresses, data or records relating to a user’s health or level of fitness (e.g., vital signs measurements, medication information, exercise information), date of birth, or any other identifying or personal information).
- the present disclosure recognizes that the use of such personal information data, in the present technology, can be used to the benefit of users.
- the personal information data can be used to authenticate a user to access their device, or gather performance metrics for the user’s interaction with an augmented or virtual world.
- other uses for personal information data that benefit the user are also contemplated by the present disclosure.
- health and fitness data may be used to provide insights into a user’s general wellness, or may be used as positive feedback to individuals using technology to pursue wellness goals.
- the present disclosure contemplates that the entities responsible for the collection, analysis, disclosure, transfer, storage, or other use of such personal information data will comply with well-established privacy policies and/or privacy practices.
- such entities should implement and consistently use privacy policies and practices that are generally recognized as meeting or exceeding industry or governmental requirements for maintaining personal information data private and secure.
- Such policies should be easily accessible by users, and should be updated as the collection and/or use of data changes.
- Personal information from users should be collected for legitimate and reasonable uses of the entity and not shared or sold outside of those legitimate uses. Further, such collection/sharing should occur after receiving the informed consent of the users.
- policies and practices should be adapted for the particular types of personal information data being collected and/or accessed and adapted to applicable laws and standards, including jurisdiction-specific considerations. For instance, in the US, collection of or access to certain health data may be governed by federal and/or state laws, such as the Health Insurance Portability and Accountability Act (HIPAA); whereas health data in other countries may be subject to other regulations and policies and should be handled accordingly. Hence different privacy practices should be maintained for different personal data types in each country.
- HIPAA Health Insurance Portability and Accountability Act
- the present disclosure also contemplates embodiments in which users selectively block the use of, or access to, personal information data. That is, the present disclosure contemplates that hardware and/or software elements can be provided to prevent or block access to such personal information data.
- the present technology can be configured to allow users to select to “opt in” or “opt out” of participation in the collection of personal information data during registration for services or anytime thereafter.
- users can select not to provide data to targeted content delivery services.
- users can select to limit the length of time data is maintained or entirely prohibit the development of a baseline profile for the user.
- the present disclosure contemplates providing notifications relating to the access or use of personal information. For instance, a user may be notified upon downloading an app that their personal information data will be accessed and then reminded again just before personal information data is accessed by the app.
- personal information data should be managed and handled in a way to minimize risks of unintentional or unauthorized access or use. Risk can be minimized by limiting the collection of data and deleting data once it is no longer needed.
- data de-identification can be used to protect a user’s privacy. De identification may be facilitated, when appropriate, by removing specific identifiers (e.g ., date of birth, etc.), controlling the amount or specificity of data stored (e.g., collecting location data at a city level rather than at an address level), controlling how data is stored (e.g., aggregating data across users), and/or other methods.
- the present disclosure broadly covers use of personal information data to implement one or more various disclosed embodiments, the present disclosure also contemplates that the various embodiments can also be implemented without the need for accessing such personal information data. That is, the various embodiments of the present technology are not rendered inoperable due to the lack of all or a portion of such personal information data.
- content can be selected and delivered to users by inferring preferences based on non-personal information data or a bare minimum amount of personal information, such as the content being requested by the device associated with a user, other non-personal information available to the content delivery services, or publicly available information.
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Abstract
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| CN202280018420.5A CN116941343A (en) | 2021-03-12 | 2022-02-25 | Organic photodetector for in-cell optical sensing |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12113279B2 (en) | 2020-09-22 | 2024-10-08 | Oti Lumionics Inc. | Device incorporating an IR signal transmissive region |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11527582B1 (en) | 2019-09-24 | 2022-12-13 | Apple Inc. | Display stack with integrated photodetectors |
| US12032106B2 (en) * | 2021-04-01 | 2024-07-09 | Varex Imaging Corporation | X-ray detectors with plastic housings |
| US12124002B2 (en) | 2021-09-03 | 2024-10-22 | Apple Inc. | Beam deflector metasurface |
| KR20230045702A (en) * | 2021-09-28 | 2023-04-05 | 삼성디스플레이 주식회사 | Electronic device and method of medsuring biometric information using same |
| KR20250010354A (en) | 2023-07-12 | 2025-01-21 | 삼성전자주식회사 | Display device and system |
| CN120358905A (en) | 2024-01-19 | 2025-07-22 | 昆山工研院新型平板显示技术中心有限公司 | Display panel, display device and preparation method of display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040067324A1 (en) * | 2002-09-13 | 2004-04-08 | Lazarev Pavel I | Organic photosensitive optoelectronic device |
| EP2335299A1 (en) * | 2008-09-09 | 2011-06-22 | Technion Research and Development Foundation, Ltd. | Derivatized fullerene-based dopants for organic semiconductors |
| US20130240840A1 (en) * | 2012-03-13 | 2013-09-19 | The Regents Of The University Of Michigan | Metal oxide charge transport material doped with organic molecules |
| EP3576154A1 (en) * | 2018-05-28 | 2019-12-04 | Samsung Electronics Co., Ltd. | Organic photoelectric devices and image sensors including the same |
| US20210005669A1 (en) * | 2019-07-05 | 2021-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display unit, display module, and electronic device |
Family Cites Families (135)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5231689A (en) | 1983-10-04 | 1993-07-27 | Tru-Lyte Systems, Inc. | Wide angle viewing illuminated information display assembly and process for manufacturing same |
| US5194986A (en) | 1992-03-23 | 1993-03-16 | Hughes Aircraft Company | Objective lens assembly for a portable missile launcher |
| US6349159B1 (en) | 1999-09-02 | 2002-02-19 | Agilent Technologies, Inc. | Lenses that launch high bandwidth modes into a fiber optic cable while eliminating feedback to a laser |
| US6780661B1 (en) | 2000-04-12 | 2004-08-24 | Finisar Corporation | Integration of top-emitting and top-illuminated optoelectronic devices with micro-optic and electronic integrated circuits |
| DE10033485C2 (en) | 2000-07-10 | 2003-10-23 | Infineon Technologies Ag | Coupling glass fiber for optically coupling a light radiation source to a multimode optical waveguide, optoelectronic light transmission component for multimode optical waveguide and manufacturing process for coupling glass windows |
| US6677709B1 (en) | 2000-07-18 | 2004-01-13 | General Electric Company | Micro electromechanical system controlled organic led and pixel arrays and method of using and of manufacturing same |
| US6407330B1 (en) * | 2000-07-21 | 2002-06-18 | North Carolina State University | Solar cells incorporating light harvesting arrays |
| US6946647B1 (en) | 2000-08-10 | 2005-09-20 | Raytheon Company | Multicolor staring missile sensor system |
| US6556349B2 (en) | 2000-12-27 | 2003-04-29 | Honeywell International Inc. | Variable focal length micro lens array field curvature corrector |
| US6910812B2 (en) | 2001-05-15 | 2005-06-28 | Peregrine Semiconductor Corporation | Small-scale optoelectronic package |
| DK1412725T3 (en) | 2001-06-29 | 2019-03-25 | Meso Scale Technologies Llc | Multi-well plates for LUMINESCENSE TEST MEASUREMENTS |
| JPWO2003062899A1 (en) | 2002-01-21 | 2005-05-26 | 松下電器産業株式会社 | Optical switch, manufacturing method thereof, and information transmission apparatus using the same |
| US20030148391A1 (en) | 2002-01-24 | 2003-08-07 | Salafsky Joshua S. | Method using a nonlinear optical technique for detection of interactions involving a conformational change |
| US7021833B2 (en) | 2002-03-22 | 2006-04-04 | Ban-Poh Loh | Waveguide based optical coupling of a fiber optic cable and an optoelectronic device |
| US20040209116A1 (en) | 2003-04-21 | 2004-10-21 | Xiaofan Ren | Organic light emitting devices with wide gap host materials |
| US6919681B2 (en) | 2003-04-30 | 2005-07-19 | Eastman Kodak Company | Color OLED display with improved power efficiency |
| JP3729353B2 (en) | 2003-06-18 | 2005-12-21 | 松下電器産業株式会社 | Solid-state imaging device and manufacturing method thereof |
| JP2005049830A (en) | 2003-07-14 | 2005-02-24 | Fuji Photo Film Co Ltd | Optical signal transmission system |
| US6948820B2 (en) | 2003-08-28 | 2005-09-27 | Scram Technologies, Inc. | Interactive display system having an optical channeling element |
| KR100582504B1 (en) | 2003-08-29 | 2006-05-23 | 이동미 | Device for guiding camera flash light |
| US7495272B2 (en) | 2003-10-06 | 2009-02-24 | Semiconductor Energy Labortaory Co., Ltd. | Semiconductor device having photo sensor element and amplifier circuit |
| AU2004294182C1 (en) | 2003-11-21 | 2014-01-16 | Visual Physics, Llc | Micro-optic security and image presentation system |
| DE202004002512U1 (en) | 2004-02-13 | 2005-03-10 | Meschke, Holger | Fiber-optic lamp for illuminating objects being photographed, has light emitting ends of optical fibers arranged in ring, e.g. around lens |
| GB0406107D0 (en) | 2004-03-17 | 2004-04-21 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
| WO2006106764A1 (en) | 2005-03-30 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | Transmission line |
| CN101405637A (en) | 2005-06-29 | 2009-04-08 | 瑞弗莱克塞特公司 | Collimating microlens array |
| JP4582166B2 (en) | 2008-03-19 | 2010-11-17 | ソニー株式会社 | Display device |
| US8441007B2 (en) | 2008-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US8603642B2 (en) | 2009-05-13 | 2013-12-10 | Global Oled Technology Llc | Internal connector for organic electronic devices |
| US8624853B2 (en) | 2009-06-01 | 2014-01-07 | Perceptive Pixel Inc. | Structure-augmented touch sensing with frustated total internal reflection |
| US8749528B2 (en) | 2009-06-25 | 2014-06-10 | Sharp Kabushiki Kaisha | Display device |
| TWI523240B (en) | 2009-08-24 | 2016-02-21 | 半導體能源研究所股份有限公司 | Photodetector and display device |
| US20120113357A1 (en) | 2009-11-06 | 2012-05-10 | Chimei Innolux Corp. | Transmissive Liquid Crystal Display with Reflective Mode |
| JP5028501B2 (en) | 2010-01-20 | 2012-09-19 | 株式会社ジャパンディスプレイイースト | Liquid crystal display |
| KR101108167B1 (en) | 2010-02-12 | 2012-02-06 | 삼성모바일디스플레이주식회사 | Organic light emitting display device |
| EP2463927B1 (en) | 2010-12-08 | 2013-08-21 | Novaled AG | Material for organic electronic device and organic electronic device |
| WO2012144997A1 (en) | 2011-04-20 | 2012-10-26 | Hewlett-Packard Development Company, L.P. | Sub-wavelength grating-based optical elements |
| US8743027B2 (en) | 2011-08-30 | 2014-06-03 | E Ink Holdings Inc. | OLED driving circuit and method of the same used in display panel |
| KR20130050605A (en) | 2011-11-08 | 2013-05-16 | 삼성전자주식회사 | Display panel and portable device |
| US9342181B2 (en) | 2012-01-09 | 2016-05-17 | Nvidia Corporation | Touch-screen input/output device touch sensing techniques |
| US9064451B2 (en) | 2012-02-01 | 2015-06-23 | Apple Inc. | Organic light emitting diode display having photodiodes |
| US9183779B2 (en) | 2012-02-23 | 2015-11-10 | Broadcom Corporation | AMOLED light sensing |
| US9633247B2 (en) | 2012-03-01 | 2017-04-25 | Apple Inc. | Electronic device with shared near field communications and sensor structures |
| US8780065B2 (en) | 2012-07-19 | 2014-07-15 | Cypress Semiconductor Corporation | Interface and synchronization method between touch controller and display driver for operation with touch integrated displays |
| JP6127447B2 (en) | 2012-10-29 | 2017-05-17 | 大日本印刷株式会社 | OPTICAL LAMINATE, DISPLAY DEVICE FRONT PLATE, DISPLAY DEVICE, RESISTANCE FILM TYPE TOUCH AND CAPACITANCE TYPE TOUCH |
| US9070648B2 (en) | 2012-11-27 | 2015-06-30 | Apple Inc. | Electronic devices with display-integrated light sensors |
| TWI547834B (en) | 2012-11-29 | 2016-09-01 | 鴻海精密工業股份有限公司 | Writing apparatus and light-emitting diode display panel and emitting device thereof |
| US9530381B1 (en) | 2012-12-20 | 2016-12-27 | Amazon Technologies, Inc. | Display with light sensor feedback |
| US9310843B2 (en) | 2013-01-02 | 2016-04-12 | Apple Inc. | Electronic devices with light sensors and displays |
| JP6300442B2 (en) | 2013-01-18 | 2018-03-28 | オリンパス株式会社 | Optical transmission module and imaging device |
| KR101883541B1 (en) | 2013-06-17 | 2018-07-30 | 도판 인사츠 가부시키가이샤 | Substrate for display device, and display device using same |
| WO2015009317A1 (en) | 2013-07-19 | 2015-01-22 | Hewlett-Packard Development Company, Lp | Light guide panel including diffraction gratings |
| KR20160047435A (en) * | 2013-07-24 | 2016-05-02 | 아이엠이씨 브이제트더블유 | Organic photovoltaic cells with enhanced photocurrent |
| JP6192465B2 (en) | 2013-09-27 | 2017-09-06 | ホシデン株式会社 | Touch panel and display device |
| CN106461881B (en) | 2014-02-07 | 2018-11-09 | 法国国立工艺学院 | Manufacture the process of vertical optical coupling structure |
| WO2015130226A1 (en) | 2014-02-25 | 2015-09-03 | Heptagon Micro Optics Pte. Ltd. | Image sensor modules including primary high-resolution imagers and secondary imagers |
| TWI518434B (en) | 2014-04-25 | 2016-01-21 | 元太科技工業股份有限公司 | Display device |
| US9836165B2 (en) | 2014-05-16 | 2017-12-05 | Apple Inc. | Integrated silicon-OLED display and touch sensor panel |
| US9741286B2 (en) | 2014-06-03 | 2017-08-22 | Apple Inc. | Interactive display panel with emitting and sensing diodes |
| US9570002B2 (en) | 2014-06-17 | 2017-02-14 | Apple Inc. | Interactive display panel with IR diodes |
| KR102260600B1 (en) | 2014-12-31 | 2021-06-04 | 엘지디스플레이 주식회사 | Touch screen device |
| US9614168B2 (en) | 2015-01-12 | 2017-04-04 | Apple Inc. | Flexible display panel with bent substrate |
| US10565734B2 (en) | 2015-04-15 | 2020-02-18 | Google Llc | Video capture, processing, calibration, computational fiber artifact removal, and light-field pipeline |
| WO2016191142A2 (en) | 2015-05-27 | 2016-12-01 | Verily Life Sciences Llc | Nanophotonic hyperspectral/lightfield superpixel imager |
| CN107004130B (en) | 2015-06-18 | 2020-08-28 | 深圳市汇顶科技股份有限公司 | Optical sensor module under screen for sensing fingerprint on screen |
| US10410037B2 (en) | 2015-06-18 | 2019-09-10 | Shenzhen GOODIX Technology Co., Ltd. | Under-screen optical sensor module for on-screen fingerprint sensing implementing imaging lens, extra illumination or optical collimator array |
| DE112016002770T5 (en) | 2015-06-19 | 2018-03-22 | Technische Universität Dresden | Organic photodetectors and their production processes |
| TWI575808B (en) | 2015-08-24 | 2017-03-21 | 吳家和 | Isolation structure of microstrip for reducing crosstalk |
| US10345905B2 (en) | 2015-09-08 | 2019-07-09 | Apple Inc. | Electronic devices with deformable displays |
| US9934418B2 (en) | 2015-12-03 | 2018-04-03 | Synaptics Incorporated | Display integrated optical fingerprint sensor with angle limiting reflector |
| US10115000B2 (en) | 2015-12-11 | 2018-10-30 | Synaptics Incorporated | Method and system for optical imaging using patterned illumination |
| TW201800459A (en) | 2015-12-18 | 2018-01-01 | 富士軟片股份有限公司 | Near-infrared absorption composition, near-infrared cut filter, near-infrared cut filter manufacturing method, solid-state imaging device, camera module, and image display device |
| EP3404484A4 (en) | 2016-01-12 | 2019-09-11 | Kuraray Co., Ltd. | SCREEN FOR DISPLAY |
| EP3907729B1 (en) | 2016-01-21 | 2025-02-26 | Apple Inc. | Power and data routing structures for organic light-emitting diode displays |
| CN107145253B (en) | 2016-02-19 | 2020-06-09 | 苹果公司 | Force Sensing Architecture |
| US10289891B2 (en) | 2016-03-31 | 2019-05-14 | Synaptics Incorpated | Optical biometric sensor having diffractive optical elements |
| CN107292215A (en) | 2016-03-31 | 2017-10-24 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| US10108841B2 (en) | 2016-03-31 | 2018-10-23 | Synaptics Incorporated | Biometric sensor with diverging optical element |
| JP6792960B2 (en) * | 2016-05-16 | 2020-12-02 | 株式会社ジャパンディスプレイ | Display device |
| US10885299B2 (en) | 2016-05-23 | 2021-01-05 | Apple Inc. | Electronic device including pin hole array mask above optical image sensor and laterally adjacent light source and related methods |
| US10713458B2 (en) | 2016-05-23 | 2020-07-14 | InSyte Systems | Integrated light emitting display and sensors for detecting biologic characteristics |
| CN105867696B (en) | 2016-06-03 | 2020-11-17 | 京东方科技集团股份有限公司 | Touch display panel, flexible display panel and display device |
| GB201609877D0 (en) | 2016-06-06 | 2016-07-20 | Microsoft Technology Licensing Llc | An autonomous pixel with multiple different sensors |
| US9909862B2 (en) | 2016-06-13 | 2018-03-06 | Google Llc | Curved array of light-emitting elements for sweeping out an angular range |
| WO2018002784A1 (en) | 2016-06-29 | 2018-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, operation method of the electronic device, and moving vehicle |
| WO2018002774A1 (en) | 2016-06-29 | 2018-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, operation method of the electronic device, and moving vehicle |
| US20180032778A1 (en) | 2016-07-29 | 2018-02-01 | Microsoft Technology Licensing, Llc | Display with a touch sensor |
| JP6949112B2 (en) | 2016-10-20 | 2021-10-13 | スリーエム イノベイティブ プロパティズ カンパニー | Optical window camouflage device |
| US10474286B2 (en) | 2016-10-25 | 2019-11-12 | Lg Display Co., Ltd. | Touch display device, active pen, touch system, touch circuit, and pen recognition method |
| WO2018093798A1 (en) | 2016-11-15 | 2018-05-24 | Bidirectional Display Inc. | Apparatus and method for optically capturing fingerprint or other images on display screen |
| CN106886767B (en) | 2017-02-23 | 2019-07-05 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
| WO2018161923A1 (en) | 2017-03-07 | 2018-09-13 | Shenzhen GOODIX Technology Co., Ltd. | Devices with peripheral task bar display zone and under-lcd screen optical sensor module for on-screen fingerprint sensing |
| KR102330096B1 (en) | 2017-04-06 | 2021-11-23 | 삼성전자 주식회사 | A method and an electronic device for acquiring biometric information during a period when video data is not transmitted to a display |
| US20180323243A1 (en) | 2017-05-02 | 2018-11-08 | Boe Technology Group Co., Ltd. | Array substrate, image collection method and display device |
| JP7154230B2 (en) | 2017-05-15 | 2022-10-17 | アウスター インコーポレイテッド | Optical Imaging Transmitter with Enhanced Brightness |
| CN111950529B (en) | 2017-05-17 | 2023-05-16 | 深圳市汇顶科技股份有限公司 | Optical fingerprint sensor with non-contact imaging capability |
| US10614279B2 (en) | 2017-06-02 | 2020-04-07 | Samsung Electronics Co., Ltd. | Apparatus and method for driving fingerprint sensing array provided in touchscreen, and driver integrated circuit for driving the touchscreen including the fingerprint sensing array |
| US10331939B2 (en) | 2017-07-06 | 2019-06-25 | Shenzhen GOODIX Technology Co., Ltd. | Multi-layer optical designs of under-screen optical sensor module having spaced optical collimator array and optical sensor array for on-screen fingerprint sensing |
| KR102441588B1 (en) | 2017-07-10 | 2022-09-07 | 삼성전자주식회사 | Beam scanning device and optical device including same |
| CN107180853B (en) | 2017-07-10 | 2020-05-12 | 京东方科技集团股份有限公司 | An OLED display panel, control method thereof, and display device |
| KR102449825B1 (en) | 2017-07-31 | 2022-10-04 | 삼성전자주식회사 | Display for fingerprint recognition and electronic apparatus |
| KR102486389B1 (en) | 2017-08-14 | 2023-01-09 | 삼성전자주식회사 | nanostructured optical element comprising, depth sensor and electronic device |
| CN107330426B (en) | 2017-08-28 | 2024-03-29 | 京东方科技集团股份有限公司 | Fingerprint identification device, display panel and fingerprint identification method |
| CN107515435B (en) | 2017-09-11 | 2020-12-29 | 京东方科技集团股份有限公司 | Display panels and display devices |
| KR102510916B1 (en) | 2017-11-02 | 2023-03-17 | 삼성디스플레이 주식회사 | Display device and method of driving the display device |
| JP7013216B2 (en) | 2017-11-28 | 2022-01-31 | 株式会社ジャパンディスプレイ | Display device |
| US10809853B2 (en) | 2017-12-11 | 2020-10-20 | Will Semiconductor (Shanghai) Co. Ltd. | Optical sensor having apertures |
| CN110488315B (en) | 2018-05-14 | 2023-09-12 | Sos实验株式会社 | Laser output device and lidar device |
| CN108648691B (en) | 2018-05-14 | 2020-03-20 | 上海天马有机发光显示技术有限公司 | Display panel, driving method thereof and display device |
| US10411797B1 (en) | 2018-06-08 | 2019-09-10 | SA Photonics, Inc. | Free space optical node with fiber bundle |
| KR102508792B1 (en) | 2018-08-07 | 2023-03-13 | 엘지디스플레이 주식회사 | Display device |
| CN108922918B (en) | 2018-09-10 | 2021-01-26 | 京东方科技集团股份有限公司 | OLED display panel, manufacturing method thereof and OLED display device |
| US10840320B2 (en) | 2018-09-28 | 2020-11-17 | Apple Inc. | Ambient light sensing display assemblies |
| EP3637472B1 (en) | 2018-10-08 | 2025-07-02 | Samsung Electronics Co., Ltd. | Organic light emitting diode display panels and display devices including the same |
| US11815703B2 (en) | 2018-12-03 | 2023-11-14 | Samsung Electronics Co., Ltd. | Meta-lens and optical apparatus including the same |
| US11067884B2 (en) | 2018-12-26 | 2021-07-20 | Apple Inc. | Through-display optical transmission, reception, or sensing through micro-optic elements |
| EP3686630A1 (en) | 2019-01-25 | 2020-07-29 | IDT Inc. | Proximity sensor, particularly for mobile devices like smartphones, tablets or the like |
| WO2020155151A1 (en) | 2019-02-02 | 2020-08-06 | 深圳市汇顶科技股份有限公司 | Fingerprint recognition apparatus and electronic device |
| US11301665B2 (en) | 2019-02-20 | 2022-04-12 | Novatek Microelectronics Corp. | Fingerprint and proximity sensing apparatus and sensing process thereof |
| WO2020178923A1 (en) * | 2019-03-01 | 2020-09-10 | シャープ株式会社 | Display device |
| US10838556B2 (en) | 2019-04-05 | 2020-11-17 | Apple Inc. | Sensing system for detection of light incident to a light emitting layer of an electronic device display |
| US20210050385A1 (en) | 2019-08-13 | 2021-02-18 | Apple Inc. | Photodetectors Integrated into Thin-Film Transistor Backplanes |
| US11394014B2 (en) * | 2019-08-29 | 2022-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Display unit, display module, and electronic device |
| US20210089741A1 (en) | 2019-09-23 | 2021-03-25 | Apple Inc. | Thin-Film Transistor Optical Imaging System with Integrated Optics for Through-Display Biometric Imaging |
| US11611058B2 (en) | 2019-09-24 | 2023-03-21 | Apple Inc. | Devices and systems for under display image sensor |
| US11527582B1 (en) | 2019-09-24 | 2022-12-13 | Apple Inc. | Display stack with integrated photodetectors |
| CN112630868B (en) | 2019-10-08 | 2024-07-02 | 三星电子株式会社 | Superlens and optical device comprising same |
| KR20210064483A (en) * | 2019-11-25 | 2021-06-03 | 삼성디스플레이 주식회사 | Display panel having input sensing function and display device |
| US11592873B2 (en) | 2020-02-14 | 2023-02-28 | Apple Inc. | Display stack topologies for under-display optical transceivers |
| US11295664B2 (en) | 2020-03-11 | 2022-04-05 | Apple Inc. | Display-synchronized optical emitters and transceivers |
| US11327237B2 (en) | 2020-06-18 | 2022-05-10 | Apple Inc. | Display-adjacent optical emission or reception using optical fibers |
| US11487859B2 (en) | 2020-07-31 | 2022-11-01 | Apple Inc. | Behind display polarized optical transceiver |
| KR102943775B1 (en) * | 2020-09-02 | 2026-03-26 | 엘지디스플레이 주식회사 | Display panel and display device using the same |
| US20230034270A1 (en) | 2021-07-28 | 2023-02-02 | Apple Inc. | Optical Fiber Illumination by a Set of Light Emitters |
| US12124002B2 (en) | 2021-09-03 | 2024-10-22 | Apple Inc. | Beam deflector metasurface |
-
2021
- 2021-03-12 US US17/200,683 patent/US11839133B2/en active Active
-
2022
- 2022-02-25 WO PCT/US2022/017842 patent/WO2022192005A1/en not_active Ceased
- 2022-02-25 KR KR1020237030893A patent/KR102844049B1/en active Active
- 2022-02-25 CN CN202280018420.5A patent/CN116941343A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040067324A1 (en) * | 2002-09-13 | 2004-04-08 | Lazarev Pavel I | Organic photosensitive optoelectronic device |
| EP2335299A1 (en) * | 2008-09-09 | 2011-06-22 | Technion Research and Development Foundation, Ltd. | Derivatized fullerene-based dopants for organic semiconductors |
| US20130240840A1 (en) * | 2012-03-13 | 2013-09-19 | The Regents Of The University Of Michigan | Metal oxide charge transport material doped with organic molecules |
| EP3576154A1 (en) * | 2018-05-28 | 2019-12-04 | Samsung Electronics Co., Ltd. | Organic photoelectric devices and image sensors including the same |
| US20210005669A1 (en) * | 2019-07-05 | 2021-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display unit, display module, and electronic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12113279B2 (en) | 2020-09-22 | 2024-10-08 | Oti Lumionics Inc. | Device incorporating an IR signal transmissive region |
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|---|---|
| KR102844049B1 (en) | 2025-08-11 |
| KR20230142609A (en) | 2023-10-11 |
| US20220293682A1 (en) | 2022-09-15 |
| CN116941343A (en) | 2023-10-24 |
| US11839133B2 (en) | 2023-12-05 |
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