WO2022190513A1 - Communication control device, communication control program, rfid reader system, and data storage method - Google Patents

Communication control device, communication control program, rfid reader system, and data storage method Download PDF

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Publication number
WO2022190513A1
WO2022190513A1 PCT/JP2021/046853 JP2021046853W WO2022190513A1 WO 2022190513 A1 WO2022190513 A1 WO 2022190513A1 JP 2021046853 W JP2021046853 W JP 2021046853W WO 2022190513 A1 WO2022190513 A1 WO 2022190513A1
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Prior art keywords
area
rewriting
data
rewrite
memory
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PCT/JP2021/046853
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French (fr)
Japanese (ja)
Inventor
健太 川上
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オムロン株式会社
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Publication of WO2022190513A1 publication Critical patent/WO2022190513A1/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/06Acceleration testing

Definitions

  • the present invention relates to a communication control device that writes to an RFID tag, a communication control program, an RFID reader system that includes the communication control device and the RFID tag, and a method of storing data in the RFID tag.
  • the RFID tag incorporates a rewritable non-volatile memory.
  • a non-volatile memory deteriorates in its ability to store data as data is repeatedly rewritten. Therefore, in order to properly manage objects using RFID tags, it is necessary to manage the number of times the nonvolatile memory is rewritten.
  • the following methods are conceivable in order to prevent the rewriting of non-volatile memory in RFID tags from exceeding the upper limit. For example, by setting an upper limit on the number of rewrites in advance in the RFID tag, counting each rewrite, issuing a warning when the number of rewrites reaches the set value, and urging the user to take action, the rewriting does not reach the upper limit. This is a way to prevent overshoot.
  • the present invention has been made in view of such circumstances, and its object is to prevent errors due to rewriting exceeding the upper limit in the memory even when the limit of the number of rewriting times of the memory cannot be estimated in advance. to prevent
  • the present invention adopts the following configuration in order to solve the above-mentioned problems.
  • a communication control device is a communication control device that performs wireless communication with a tag having a nonvolatile memory and controls storage of data in the nonvolatile memory, a memory area management unit for specifying a part of the memory area of the rewriting area as a rewriting area, and further specifying a first specified area and a second specified area in the rewriting area; a data rewriting unit for storing the data in a memory, and when the data rewriting unit rewrites the first specified area and stores the data in the nonvolatile memory, the second specified area is rewritten a plurality of times by dummy data.
  • a dummy data rewriting unit for rewriting, and a rewriting success/failure determination unit for determining success or failure of rewriting of the dummy data are provided.
  • a data storage method is a data storage method for controlling storage of data in the nonvolatile memory by performing wireless communication with a tag having the nonvolatile memory.
  • a memory area management step of designating a part of the memory area of as a rewriting area and further designating a first designated area and a second designated area in the rewriting area;
  • a data rewriting step of storing the data in a memory; and in the data rewriting step, when the first designated region is rewritten and the data is stored in the nonvolatile memory, a plurality of the second designated regions are rewritten by dummy data.
  • a rewrite success/failure determination step of determining success or failure of rewriting of the dummy data.
  • FIG. 1 is a block diagram showing an example configuration of a main part of an RFID reader system according to an embodiment of the present invention
  • FIG. It is a figure which shows typically an example of the production line to which the said RFID reader system is applied.
  • FIG. 4 is a diagram schematically showing another example of a production line to which the RFID reader system is applied; 4 is a perspective view showing an example of an RFID tag of the RFID reader system; FIG. FIG. 5 is a cross-sectional view taken along line AA of FIG. 4; FIG. 5 is a cross-sectional view taken along the line BB of FIG. 4; 4 is a perspective view showing an example of an antenna of the RFID reader system;
  • FIG. 4 is a memory map illustrating an example of a write area of the RFID tag; 4 is a sequence diagram showing an example of the flow of processing of the RFID reader system; FIG.
  • this embodiment According to one aspect of the present invention will be described based on the drawings.
  • this embodiment demonstrates based on the example which applied this invention to the production line.
  • the configuration of the present invention described in the claims can be applied to various industrial fields other than production lines.
  • FIG. 1 is a block diagram showing an example of the configuration of the main part of an RFID reader system 100 according to this embodiment of the invention.
  • FIG. 2 is a diagram schematically showing an example of a production line to which the RFID reader system 100 is applied.
  • FIG. 3 is a diagram schematically showing another example of a production line to which RFID reader system 100 is applied. 2 and 3, wireless communication within the RFID reader system 100 and between the RFID reader system 100 and the host device 200 are indicated by double arrows. Note that the communication between the RFID reader system 100 and the host device 200 may be wired communication.
  • the RFID reader system 100 includes an RFID (Radio Frequency Identification) tag T that is attached to a pallet 50 on which each product 40 is placed and moves along a production line 60, and the production line 60 It includes an R/W (reader/writer) 1 having an antenna 2 and a controller 3 arranged along.
  • R/W1 is an example of the "communication control device" of the present invention.
  • each product can be appropriately managed by writing data to the RFID tag T and reading data from the RFID tag T by R/W1.
  • Such an RFID reader system 100 is required to be used in various environments, for example, it is also required to be used in a production line 60 equipped with a high-temperature drying oven as shown in FIG. 3
  • R/W1 is shown communicating with the RFID tag T of the product 40 just flowing out of the drying oven H.
  • FIG. 3 the RFID tag T is moving through the production line 60 in a hot state.
  • the non-volatile memory T10 of the RFID tag T has an upper limit on the number of times it can be rewritten by the manufacturer.
  • the upper limit of the number of rewritable times determined by the manufacturer is a regulation for use at room temperature, such as 100,000 times at 25° C. for each block.
  • the actual upper limit of the rewritable number of times may be lower than the number of times indicated by the manufacturer due to the effect of temperature.
  • the R/W 1 performs wireless communication with the RFID tag T having the nonvolatile memory T10, and controls storage of data in the nonvolatile memory T10 as follows. That is, the memory area management unit 13 designates a part of the memory area T50 of the nonvolatile memory T10 as the rewriting area T60, and further designates the first designated area T11 and the second designated area T12 in the rewriting area T60. . Further, the data rewriting section 14 rewrites the first designated area T11 to store the data in the nonvolatile memory T10.
  • the dummy data rewriting section 15 rewrites the second designated area T12 with the dummy data a plurality of times. Then, the rewrite success/failure determination unit 16 determines whether or not the dummy data has been successfully rewritten, and if the rewrite of the dummy data has not succeeded, it is determined that the rewrite area T60 has reached the rewrite limit.
  • the number of times of rewriting in the second specified area T12 is always greater than that in the first specified area T11, and the number of times of rewriting in the second specified area T12 reaches the upper limit before the number of times of rewriting in the first specified area T11.
  • the R/W1 can determine that the rewrite area T60 has reached the rewrite limit before the number of rewrites in the first designated area T11 where data is rewritten reaches the upper limit and an error occurs. Therefore, some action can be taken to avoid the error before it occurs.
  • the R/W 1 even if the temperature of the RFID tag T is high immediately after coming out of a high-temperature drying oven or the like, the upper limit of the number of times the RFID tag T can be rewritten is taken care of. wireless communication with the RFID tag T can be performed. Therefore, the product can be immediately sent to the next process without waiting for the temperature of the RFID tag T to drop, so it can be used in the production line 60 equipped with a high-temperature drying oven.
  • the RFID reader system 100 has an R/W 1 and a plurality of RFID tags T. As shown in FIG. The RFID reader system 100 is a system that reads data from the RFID tag T and writes data to the RFID tag T by performing wireless communication between the R/W 1 and the RFID tag T. FIG. The number of R/Ws 1 and RFID tags T included in the RFID reader system 100 is arbitrary.
  • FIG. 4 is a perspective view showing an example of the RFID tag T of the RFID reader system 100.
  • FIG. 5 is a cross-sectional view taken along line AA of FIG. 6 is a cross-sectional view taken along the line BB of FIG. 4.
  • the RFID tag (tag) T includes an exterior T20, an antenna coil T21, a circuit board T22, an IC chip T24, and a resistor T23.
  • the exterior part T20 covers the antenna coil T21, the circuit board T22, the resistor T23, and the IC chip T24.
  • the antenna coil T21 is provided on the circuit board T22 along the outer circumference of the circuit board T22, and transmits and receives radio waves to and from the R/W1.
  • Resistor T23 adjusts the current generated by antenna coil T21.
  • the IC chip T24 is provided on the circuit board T22 and has a nonvolatile memory T10.
  • the nonvolatile memory T10 stores various data used by the RFID tag T. Flash memory, EEPROM (registered trademark), FeRAM (ferroelectric memory), ReRAM (resistance change memory), MRAM (magnetic memory), etc., can be appropriately adopted as the nonvolatile memory T10, for example.
  • EEPROM registered trademark
  • FeRAM ferroelectric memory
  • ReRAM resistance change memory
  • MRAM magnetic memory
  • FIG. 7 is a perspective view showing an example of the antenna 2 of the RFID reader system 100.
  • the R/W1 performs wireless communication with an RFID tag T having a nonvolatile memory T10 to control storage of data in the nonvolatile memory T10.
  • R/W 1 has antenna 2 and controller 3 .
  • the antenna 2 is installed, for example, at a position facing the RFID tags T, and performs wireless communication with a plurality of RFID tags T using RFID technology.
  • the arrangement position of the antenna 2 is not limited to the above, and may be arranged so that the RFID tag T with which communication is desired is located within the communicable range of the antenna 2 .
  • the antenna 2 can perform multi-access to sequentially communicate with a plurality of RFID tags T existing simultaneously within a communicable range.
  • Antenna 2 may comprise a transmitter and a receiver. As shown in FIGS. 2, 3 and 7, the antenna 2 has, for example, a substantially rectangular parallelepiped housing, and is connected to the controller 3 via a communication line 2a.
  • the controller 3 controls storage of data in the non-volatile memory T10 of the RFID tag T via the antenna 2.
  • FIG. Specifically, for example, the controller 3 writes data to each RFID tag T or reads data from each RFID tag T via the antenna 2 .
  • the controller 3 includes a storage unit 4, a communication unit 5, and a control unit 10, as shown in FIG.
  • the storage unit 4 is, for example, an auxiliary storage device such as a hard disk drive or solid state drive.
  • the storage unit 4 stores various programs executed by the control unit 10 and data used by the programs.
  • the storage unit 4 also stores, for example, the UID (user identifier) of each RFID tag T, the update data included in the RW command with the estimation function, dummy data, and the like.
  • the communication unit 5 transmits and receives information to and from the R/W 1 host device 200 such as a server. Information may be transmitted and received between the antenna 2 and the control unit 10 via the communication unit 5, or the information may be transmitted and received directly between the antenna 2 and the control unit 10. Also, the role of the communication unit 5 may be played by the antenna 2 .
  • the control unit 10 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), etc., and controls each component according to information processing. As shown in FIG. 1, the control unit 10 includes a command acquisition unit 11, a UID determination unit 12, a memory area management unit 13, a data rewrite unit 14, a dummy data rewrite unit 15, a rewrite success/failure determination unit 16, A notification unit 17 is provided.
  • CPU Central Processing Unit
  • RAM Random Access Memory
  • ROM Read Only Memory
  • FIG. 1 The control unit 10 includes a command acquisition unit 11, a UID determination unit 12, a memory area management unit 13, a data rewrite unit 14, a dummy data rewrite unit 15, a rewrite success/failure determination unit 16, A notification unit 17 is provided.
  • the command acquisition unit 11 receives a command from the host device 200 of R/W1 such as a server.
  • the commands are, for example, a tag search command and an RW command with an estimation function.
  • the tag search command is a signal for confirming whether or not the RFID tag T to which the user wishes to write is located within the communicable area of the antenna 2 .
  • the command acquisition unit 11 acquires the tag search command, it reads the UID (user identifier) of the RFID tag T positioned within the communicable area of the antenna 2 from the RFID tag T.
  • UID user identifier
  • the RW command with estimation function is a signal that instructs the rewriting of data to the RFID tag T.
  • the RW command with estimation function includes update data (data) to be written to the RFID tag T and information indicating the position to write the update data.
  • the command acquisition unit 11 transmits a command acquisition signal indicating that the RW command with estimation function has been acquired to the data rewriting unit 14 .
  • the UID determination unit 12 refers to the storage unit 4 and determines whether the UID read from the RFID tag T by the command acquisition unit 11 is the desired RFID tag T. If the UID read from the RFID tag T by the command acquisition unit 11 is the desired RFID tag T, the UID determination unit 12 outputs the search result indicating that the RFID tag T is located within the communicable area of the antenna 2 to the host device. 200. If the UID read from the RFID tag T by the command acquisition unit 11 is not the desired RFID tag T, the UID determination unit 12 transmits an error result to the host device 200 .
  • the memory area management unit 13 designates a part of the memory area T50, which is the data storable area of the nonvolatile memory T10, as the rewrite area T60, and further designates a first designated area T11 and a second designated area within the rewrite area T60. and T12.
  • the rewrite area T60 is an area that can be set in any range in the memory area T50.
  • the first specified area T11 is an area in which update data is written.
  • the second designated area T12 is an area in which dummy data, which will be described later, is written. Writing of update data is prohibited in the second designated region T12.
  • FIG. 8 is a memory map illustrating an example of the write area T60 of the RFID tag T.
  • the memory area management unit 13 designates, for example, block B123 and block B124 in memory area T50 as rewrite area T60. Further, the memory area management unit 13 designates the block B124 in the rewriting area T60 as the second designated area T12, and designates the block B123, which is the area other than the second designated area T12 in the rewriting area T60, as the first designated area T11. do. That is, the second designated area T12 is an arbitrary block in the rewrite area T60, and the first designated area T11 is a block other than the arbitrary block in the rewrite area T60.
  • the first designated area T11 and the second designated area T12 may be composed of a plurality of blocks.
  • the number of blocks in the rewriting area T60 is equal to the sum of the number of blocks in the first specified area T11 and the number of blocks in the second specified area T12.
  • first specified region T11 and the second specified region T12 do not have to be adjacent to each other.
  • the block B2 and the block B123 are the rewrite area T60
  • the block B2 may be designated as the first designated area T11 and the block B123 may be designated as the second designated area T12.
  • the memory area management unit 13 designates the rewriting area T60, the first designated area T11, and the second designated area T12 in advance, and before the RW command with the estimation function is transmitted from the higher-level device 200, the upper-level device 200, the first designated area T11 is transmitted.
  • the timing at which the memory area management unit 13 transmits the first designated area T11 to the higher-level device 200 may be the timing at which the UID determination unit 12 transmits the result of the tag search command to the higher-level device 200, for example.
  • the RW command with estimation function by the host device 200 is generated by determining the position to write the update data in the first designated area T11 transmitted from the memory area management unit 13 .
  • the memory area management unit 13 changes the rewrite area T60 in the memory area T50.
  • the memory area management unit 13 When the rewrite success/failure determination unit 16 determines that the rewrite area T60 has reached the rewrite limit, the memory area management unit 13 operates as follows.
  • the memory area management unit 13, changes the rewriting area T60 from the blocks B123 and B124 to the blocks B1 and B2. Further, the memory area management unit 13 designates the block B2 in the rewrite area T60 as the second designated area T12, and designates the block B1, which is the area other than the second designated area T12 in the rewrite area T60, as the first designated area T11. to be specified.
  • the memory area management unit 13 divides the memory area T50 into a predetermined number and sets the rewrite area T60, thereby dividing the rewrite area T60 into the rewrite area T60 including the second designated area T12 that has reached the rewrite limit.
  • a new rewrite area T60 can be set in the area.
  • a new rewrite area T60 can be automatically set in a different area within the memory area T50.
  • the same nonvolatile memory T10 can be used repeatedly.
  • the data rewriting unit 14 rewrites the first designated area T11 and stores the updated data in the nonvolatile memory T10. Specifically, upon receiving the command acquisition signal from the command acquisition unit 11, the data rewriting unit 14 rewrites the data at the position indicated by the RW command with estimation function in the first specified region T11 to the update data, and stores the data in the nonvolatile memory.
  • the rewritten update data is stored in T10.
  • the data rewriting unit 14 After the rewriting, the data rewriting unit 14 reads the data at the rewritten position, compares it with the update data included in the RW command with estimation function stored in the storage unit 4, is successfully rewritten. When the data rewriting unit 14 determines that the update data has been successfully rewritten, the data rewriting unit 14 transmits a signal indicating that the update data has been successfully rewritten to the dummy data rewriting unit 15 . When the data rewriting unit 14 determines that the update data has not been successfully rewritten, the data rewriting unit 14 transmits an error to the host device 200 .
  • the dummy data rewriting unit 15 When the data rewriting unit 14 rewrites the data at the position in the first specified region T11 and stores the updated data in the nonvolatile memory T10, the dummy data rewriting unit 15 rewrites the second specified region T12 a plurality of times with the dummy data. rewrite. Specifically, when the dummy data rewriting section 15 receives a signal from the data rewriting section 14 indicating that the update data has been successfully rewritten, the dummy data rewriting section 15 rewrites the second designated region T12 with dummy data a plurality of times. The plurality of times may be, for example, three times.
  • the number of rewrites in the second specified area T12 is always greater than the number of rewrites in the first specified area T11, and the second specified area T12 reaches the rewrite limit earlier than the first specified area T11.
  • the number of times of rewriting of the first specified area T11 is always smaller than the number of times of rewriting of the second specified area T12, so the first specified area T11 is always rewritten until the second specified area T12 reaches the upper limit of the number of times of rewriting. .
  • the dummy data for rewriting the second specified area T12 is different for each of the multiple times. Specifically, different data such as all 0 data (000%), 01 data (010101%), 10 data (101010%) and all 1 data (111%) are used as dummy data. is used to rewrite multiple times. By using such data with different simple patterns as dummy data, it becomes easier to detect errors.
  • the rewrite success/failure determination unit 16 determines whether the dummy data has been rewritten successfully. Specifically, when the dummy data rewriting section 15 finishes rewriting the dummy data, the data in the predetermined position of the second designated area T12 is read, compared with the dummy data stored in the storage section 4, and the dummy data determines whether the rewriting of is successful or not.
  • the notification unit 17 notifies the user when the rewrite success/failure determination unit 16 determines that the dummy data has not been successfully rewritten. This can prompt the user to take action.
  • the notification may include a message recommending replacement of the RFID tag T, or a message recommending a change of the writing position of the update data.
  • the notification unit 17 transmits a signal to that effect to the host device 200 .
  • the notification unit 17 notifies the host device 200 via the communication unit 5 .
  • the host device 200 can know that the nonvolatile memory T10 of the RFID tag T has reached the rewrite limit. Therefore, the host device 200 can replace the nonvolatile memory T10 of the RFID tag T, change the writing position of the update data, etc. before an error occurs due to rewriting exceeding the upper limit in the nonvolatile memory T10 of the RFID tag T. can.
  • the notification unit 17 determines that the rewriting of the dummy data has succeeded, it transmits a signal to that effect to the host device 200 .
  • FIG. 9 is a sequence diagram showing an example of the processing flow of the RFID reader system 100. As shown in FIG. Based on FIG. 9, the flow of data storage processing according to this embodiment will be described.
  • R/W1 acquires a tag search command from host device 200.
  • R/W1 executes a UID read operation to retrieve the UID (user identifier) is read from the RFID tag T.
  • the R/W 1 determines whether the UID read from the RFID tag T is the desired RFID tag T at time s3.
  • the R/W1 designates the rewriting area T60, the first designated area T11, and the second designated area T12 at time s4 ( memory area management step). At time s5, the R/W 1 transmits to the host device 200 the detection search result indicating that the RFID tag T is located within the communicable area of the antenna 2 and the first specified area T11.
  • the R/W 1 transmits an error search result to the host device 200.
  • host device 200 Upon receiving the detection search result from R/W1, host device 200 transmits an RW command with an estimation function to R/W1 at time s6.
  • the R/W 1 acquires the RW command with estimation function from the host device 200, at time s7, it executes the update data write operation and performs the following operations. That is, the R/W 1 rewrites the data at the position of the first designated region T11 designated by the RW command with estimation function to update data and stores the update data in the nonvolatile memory T10 (data rewrite step).
  • the R/W 1 executes an update data rewrite result read operation at time s8, reads the data in the rewritten position at time s7, and determines whether or not the update data has been successfully rewritten at time s9. do.
  • the R/W 1 determines at time s9 that the rewriting was successful, at time s10, it executes a dummy data write operation to rewrite the second designated region T12 with dummy data multiple times (dummy data rewriting step).
  • the R/W1 executes a dummy data rewrite result read operation, reads the data at the position where the dummy data was written, and determines whether the dummy data has been rewritten successfully (rewrite success/failure determination) at time s12. step).
  • the R/W 1 transmits to the host device 200 at time s13 a result indicating that the dummy data has been successfully rewritten. Further, when it is determined at time s12 that the dummy data has not been successfully rewritten, the R/W 1 determines at time s13 that the rewrite area T60 has reached the rewrite limit (rewrite success/failure determination step). is sent to the host device 200 to notify the user.
  • the operation from time s7 to time s12 may be repeated multiple times.
  • the number of repetitions is set by the RW command with estimation function, for example.
  • the number of times of rewriting of the second designated area T12 is always greater than that of the first designated area T11, and the number of times of rewriting of the second designated area T12 reaches the upper limit before the first designated area T11. .
  • the R/W1 can determine that the rewrite area T60 has reached the rewrite limit before the number of rewrites in the first designated area T11 where data is rewritten reaches the upper limit and an error occurs. Therefore, some action can be taken to avoid the error before it occurs.
  • the function of a communication control device is a program that causes a computer to function as the device, and causes the computer to function as each control block (especially each part included in the control unit) of the device. It can be realized by a program for
  • the device comprises a computer having at least one control device (eg processor) and at least one storage device (eg memory) as hardware for executing the program.
  • control device eg processor
  • storage device eg memory
  • the program may be recorded on one or more non-temporary, computer-readable recording media.
  • the recording medium may or may not be included in the device. In the latter case, the program may be supplied to the device via any transmission medium, wired or wireless.
  • each control block can be realized by a logic circuit.
  • a logic circuit for example, an integrated circuit in which logic circuits functioning as the respective control blocks are formed is also included in the scope of the present invention.
  • a communication control device is a communication control device that performs wireless communication with a tag having a nonvolatile memory and controls storage of data in the nonvolatile memory, a memory area management unit for specifying a part of the memory area of the rewriting area as a rewriting area, and further specifying a first specified area and a second specified area in the rewriting area; a data rewriting unit for storing the data in a memory, and when the data rewriting unit rewrites the first specified area and stores the data in the nonvolatile memory, the second specified area is rewritten a plurality of times by dummy data.
  • a dummy data rewriting unit for rewriting, and a rewriting success/failure determination unit for determining success or failure of rewriting of the dummy data are provided.
  • the dummy data rewriting section rewrites the dummy data multiple times in the second designated area. Therefore, the number of times of rewriting is always greater in the second specified area than in the first specified area, and the number of times of rewriting reaches the upper limit before the first specified area.
  • the rewrite success/failure determination unit determines that the rewrite area has reached the rewrite limit based on whether the rewrite of the dummy data succeeds or fails because the rewrite of the dummy data does not succeed. can.
  • the memory area management unit changes the rewrite area in the memory area. good.
  • the memory area management unit can automatically change the rewrite area.
  • the same nonvolatile memory can be used repeatedly.
  • the burden on the user can be eliminated.
  • the dummy data for rewriting the second designated area may be different for each of the plurality of times.
  • the second designated area may be an arbitrary block in the rewriting area
  • the first designated area may be a block other than the arbitrary block in the rewriting area.
  • the rewrite success/failure determination unit may determine that the rewrite area has reached a rewrite limit when the rewrite of the dummy data is not successful.
  • the communication control device may include a notification unit that notifies a user when the rewrite success/failure determination unit determines that the dummy data has not been successfully rewritten.
  • the notification unit notifies the user that the rewrite area has reached the rewrite limit. This allows the user to know that the rewrite area has reached the rewrite limit.
  • the communication control device further includes a notification unit that notifies a higher-level device via the communication control device when the rewrite success/failure determination unit determines that the dummy data has not been successfully rewritten.
  • the host device can receive that the rewrite area has reached the rewrite limit. As a result, the host device can know that the tag memory has reached the rewrite limit, and can change the writing position of the update data of the tag before an error occurs due to rewriting exceeding the upper limit in the non-volatile memory of the tag. It can be carried out.
  • an RFID reader system includes the communication control device and the tag.
  • a communication control program is a program for causing a computer to function as the above-described communication control device, and includes the memory area management unit, the data rewriting unit, the dummy data rewriting unit, and the The computer functions as a rewriting success/failure determination unit.
  • a data storage method is a data storage method for controlling storage of data in the nonvolatile memory by performing wireless communication with a tag having the nonvolatile memory.
  • a memory area management step of designating a part of the memory area of as a rewriting area and further designating a first designated area and a second designated area in the rewriting area;
  • a data rewriting step of storing the data in a memory; and in the data rewriting step, when the first designated region is rewritten and the data is stored in the nonvolatile memory, a plurality of the second designated regions are rewritten by dummy data.
  • a rewrite success/failure determination step of determining success or failure of rewriting of the dummy data.
  • the communication control device may be realized by a computer.
  • the communication control device is implemented by the computer by operating the computer as each part (software element) included in the communication control device.
  • a control program for a communication control device realized by a computer and a computer-readable recording medium recording it are also included in the scope of the present invention.
  • R/W communication control unit
  • memory area management unit 14 data rewrite unit 15 dummy data rewrite unit 16 rewrite success/failure determination unit 17 notification unit
  • RFID reader system 200 host device
  • RFID tag (tag) T10 non-volatile memory

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Abstract

The present invention prevents errors caused by a rewrite exceeding an upper limit of a memory even if a limit of a number of rewrites of the memory cannot be estimated. A R/W (1) comprises: a memory region management unit (13) that designates, in a non-volatile memory (T10) of an RFID tag (T), a rewrite region (T60), a first designated region (T11), and a second designated region (T12); a data rewrite unit (14) that rewrites the first designated region (T11); a dummy data rewrite unit (15) that rewrites the second designated region (T12) multiple times in the case of the above-mentioned rewrite; and a rewrite success/failure determination unit (16) that determines a success/failure of the rewrite of the dummy data.

Description

通信制御装置、通信制御プログラム、RFIDリーダシステム及びデータ記憶方法COMMUNICATION CONTROL DEVICE, COMMUNICATION CONTROL PROGRAM, RFID READER SYSTEM AND DATA STORAGE METHOD
 本発明はRFIDタグに書き込みを行う通信制御装置、通信制御プログラム、前記通信制御装置と前記RFIDタグとを備えるRFIDリーダシステム及びRFIDタグへのデータ記憶方法に関する。 The present invention relates to a communication control device that writes to an RFID tag, a communication control program, an RFID reader system that includes the communication control device and the RFID tag, and a method of storing data in the RFID tag.
 近年、RFID(Radio Frequency IDentification)タグを利用して対象物を管理する手法が普及しており、例えば工場の生産管理、旅客機の備品管理、または倉庫での備品管理等のために使用されている。RFIDタグには、データの書き換えが可能な不揮発性メモリが組み込まれている。不揮発性メモリは、データの書き換えを繰り返すことによりデータを保存する機能が劣化する。そのため、RFIDタグを用いて対象物の管理を適正に行うためには、不揮発性メモリの書き換え回数の管理が必要となる。 In recent years, the method of managing objects using RFID (Radio Frequency IDentification) tags has become widespread. For example, it is used for production management in factories, equipment management for passenger aircraft, and equipment management in warehouses. . The RFID tag incorporates a rewritable non-volatile memory. A non-volatile memory deteriorates in its ability to store data as data is repeatedly rewritten. Therefore, in order to properly manage objects using RFID tags, it is necessary to manage the number of times the nonvolatile memory is rewritten.
日本国特開2005-14530号公報Japanese Patent Application Laid-Open No. 2005-14530
 RFIDタグにおいて不揮発性メモリの書き換えが上限を超えることを防ぐために、下記の方法が考えられる。例えば、予めRFIDタグに書き換え回数の上限を設定しておき、書き換えごとにカウントし、書き換え回数が設定した値になったときに警告を出し、ユーザに対応を促すことで、前記書き換えが上限を超えることを防ぐ方法である。 The following methods are conceivable in order to prevent the rewriting of non-volatile memory in RFID tags from exceeding the upper limit. For example, by setting an upper limit on the number of rewrites in advance in the RFID tag, counting each rewrite, issuing a warning when the number of rewrites reaches the set value, and urging the user to take action, the rewriting does not reach the upper limit. This is a way to prevent overshoot.
 しかしながら、RFIDタグがさらされる環境は様々であり、書き換え回数の上限を適切に定めることは困難である。特に、高温状況下で書き換えが行われる場合には、書き換え可能な回数が少なくなる。 However, there are various environments in which RFID tags are exposed, and it is difficult to appropriately determine the upper limit of the number of rewrites. In particular, when rewriting is performed under high temperature conditions, the number of rewritable times decreases.
 本発明は、一側面では、このような実情を鑑みてなされたものであり、その目的は、メモリの書き換え回数の限度をあらかじめ推定することができない場合においても、メモリにおける上限を超える書き換えによるエラーを防ぐことにある。 In one aspect, the present invention has been made in view of such circumstances, and its object is to prevent errors due to rewriting exceeding the upper limit in the memory even when the limit of the number of rewriting times of the memory cannot be estimated in advance. to prevent
 本発明は、上述した課題を解決するために、以下の構成を採用する。 The present invention adopts the following configuration in order to solve the above-mentioned problems.
 すなわち、本発明の一側面に係る通信制御装置は、不揮発性メモリを有するタグと無線通信を行って、前記不揮発性メモリへのデータの記憶を制御する通信制御装置であって、前記不揮発性メモリのメモリ領域の一部を書き換え領域に指定し、さらに、前記書き換え領域内の第1指定領域と第2指定領域とを指定するメモリ領域管理部と、前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させるデータ書き換え部と、前記データ書き換え部が前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させた場合に、ダミーデータにより前記第2指定領域を複数回書き換えるダミーデータ書き換え部と、前記ダミーデータの書き換えの成否を判定する書き換え成否判定部と、を備える。 That is, a communication control device according to one aspect of the present invention is a communication control device that performs wireless communication with a tag having a nonvolatile memory and controls storage of data in the nonvolatile memory, a memory area management unit for specifying a part of the memory area of the rewriting area as a rewriting area, and further specifying a first specified area and a second specified area in the rewriting area; a data rewriting unit for storing the data in a memory, and when the data rewriting unit rewrites the first specified area and stores the data in the nonvolatile memory, the second specified area is rewritten a plurality of times by dummy data. A dummy data rewriting unit for rewriting, and a rewriting success/failure determination unit for determining success or failure of rewriting of the dummy data are provided.
 また、本発明の一側面に係るデータ記憶方法は、不揮発性メモリを有するタグと無線通信を行って、前記不揮発性メモリへのデータの記憶を制御するデータ記憶方法であって、前記不揮発性メモリのメモリ領域の一部を書き換え領域に指定し、さらに、前記書き換え領域内の第1指定領域と第2指定領域とを指定するメモリ領域管理ステップと、前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させるデータ書き換えステップと、前記データ書き換えステップにおいて、前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させた場合に、ダミーデータにより前記第2指定領域を複数回書き換えるダミーデータ書き換えステップと、前記ダミーデータの書き換えの成否を判定する書き換え成否判定ステップと、を含む。 A data storage method according to one aspect of the present invention is a data storage method for controlling storage of data in the nonvolatile memory by performing wireless communication with a tag having the nonvolatile memory. a memory area management step of designating a part of the memory area of as a rewriting area and further designating a first designated area and a second designated area in the rewriting area; a data rewriting step of storing the data in a memory; and in the data rewriting step, when the first designated region is rewritten and the data is stored in the nonvolatile memory, a plurality of the second designated regions are rewritten by dummy data. and a rewrite success/failure determination step of determining success or failure of rewriting of the dummy data.
 本発明の一態様によれば、メモリの書き換え回数の限度を推定することができない場合においても、メモリにおける上限を超える書き換えによるエラーを防ぐことができる。 According to one aspect of the present invention, even when the limit of the number of times of rewriting of the memory cannot be estimated, it is possible to prevent errors due to rewriting exceeding the upper limit of the memory.
本発明の実施形態に係るRFIDリーダシステムの要部の構成の一例を示すブロック図である。1 is a block diagram showing an example configuration of a main part of an RFID reader system according to an embodiment of the present invention; FIG. 前記RFIDリーダシステムが適用される生産ラインの一例を模式的に示す図である。It is a figure which shows typically an example of the production line to which the said RFID reader system is applied. 前記RFIDリーダシステムが適用される生産ラインの他の例を模式的に示す図である。FIG. 4 is a diagram schematically showing another example of a production line to which the RFID reader system is applied; 前記RFIDリーダシステムのRFIDタグの一例を示す斜視図である。4 is a perspective view showing an example of an RFID tag of the RFID reader system; FIG. 図4のA-A断面図である。FIG. 5 is a cross-sectional view taken along line AA of FIG. 4; 図4のB-B断面図である。FIG. 5 is a cross-sectional view taken along the line BB of FIG. 4; 前記RFIDリーダシステムのアンテナの一例を示す斜視図である。4 is a perspective view showing an example of an antenna of the RFID reader system; FIG. 前記RFIDタグの書き込み領域の一例を説明するメモリマップである。4 is a memory map illustrating an example of a write area of the RFID tag; 前記RFIDリーダシステムの処理の流れの一例を示すシーケンス図である。4 is a sequence diagram showing an example of the flow of processing of the RFID reader system; FIG.
 〔実施形態〕
 以下、本発明の一側面に係る実施の形態(以下、「本実施形態」とも表記する)を、図面に基づいて説明する。なお、以下では、本発明を生産ラインに応用した例に基づいて説明する。しかし、特許請求の範囲に記載の本発明の構成は、生産ラインの他にも、種々の産業分野に応用可能である。
[Embodiment]
Hereinafter, an embodiment (hereinafter also referred to as "this embodiment") according to one aspect of the present invention will be described based on the drawings. In addition, below, it demonstrates based on the example which applied this invention to the production line. However, the configuration of the present invention described in the claims can be applied to various industrial fields other than production lines.
 §1 適用例
 図1から図3を用いて、本発明が適用される場面の例について説明する。図1は、本発明の本実施形態に係るRFIDリーダシステム100の要部の構成の一例を示すブロック図である。図2は、RFIDリーダシステム100が適用される生産ラインの一例を模式的に示す図である。図3は、RFIDリーダシステム100が適用される生産ラインの他の例を模式的に示す図である。なお、図2及び図3では、RFIDリーダシステム100内及びRFIDリーダシステム100と上位機器200との無線通信を両矢印で示している。なお、RFIDリーダシステム100と上位機器200との通信は有線通信であってもよい。
§1 Application Example An example of a scene to which the present invention is applied will be described with reference to FIGS. 1 to 3. FIG. FIG. 1 is a block diagram showing an example of the configuration of the main part of an RFID reader system 100 according to this embodiment of the invention. FIG. 2 is a diagram schematically showing an example of a production line to which the RFID reader system 100 is applied. FIG. 3 is a diagram schematically showing another example of a production line to which RFID reader system 100 is applied. 2 and 3, wireless communication within the RFID reader system 100 and between the RFID reader system 100 and the host device 200 are indicated by double arrows. Note that the communication between the RFID reader system 100 and the host device 200 may be wired communication.
 図2に示すように、RFIDリーダシステム100には、上に各製品40を乗せたパレット50に装着され、生産ライン60に沿って移動するRFID(Radio Frequency Identification)タグTと、当該生産ライン60に沿って配置されたアンテナ2及びコントローラ3を有するR/W(リーダライタ)1が含まれる。ここで、R/W1は、本発明の「通信制御装置」の一例である。 As shown in FIG. 2, the RFID reader system 100 includes an RFID (Radio Frequency Identification) tag T that is attached to a pallet 50 on which each product 40 is placed and moves along a production line 60, and the production line 60 It includes an R/W (reader/writer) 1 having an antenna 2 and a controller 3 arranged along. Here, R/W1 is an example of the "communication control device" of the present invention.
 このRFIDリーダシステム100によれば、R/W1によりRFIDタグTに対するデータの書き込みや、RFIDタグTからのデータの読み取りを行うことにより、各製品を適切に管理することができる。 According to this RFID reader system 100, each product can be appropriately managed by writing data to the RFID tag T and reading data from the RFID tag T by R/W1.
 このような、RFIDリーダシステム100は、様々な環境下での使用が求められ、例えば、図3で示すような高温の乾燥炉を備える生産ライン60での使用も求められる。図3では、乾燥炉Hから流れ出てすぐの製品40のRFIDタグTと通信を行うR/W1が示されている。図3において、RFIDタグTは生産ライン60を高温の状態で移動している。 Such an RFID reader system 100 is required to be used in various environments, for example, it is also required to be used in a production line 60 equipped with a high-temperature drying oven as shown in FIG. In FIG. 3 R/W1 is shown communicating with the RFID tag T of the product 40 just flowing out of the drying oven H. FIG. In FIG. 3, the RFID tag T is moving through the production line 60 in a hot state.
 ここで、RFIDタグTが有する不揮発性メモリT10には、書き換え回数の上限がメーカにより定められている。メーカによる書き換え可能な回数の上限は、例えば、ブロック毎に25℃で10万回等、常温での使用についての規定である。しかしながら、温度の影響により、実際の書き換え可能回数の上限が、メーカが提示している回数よりも少なくなるおそれがある。さらに、高温状況下で不揮発性メモリT10の書き換えを行いたいユーザが、高温状況下での不揮発性メモリTの書き換え回数の限度(寿命)を推定する手段がない。そのため、生産ライン60の稼働時に書き換え回数が上限を超えるエラーを生じてしまう可能性がある。 Here, the non-volatile memory T10 of the RFID tag T has an upper limit on the number of times it can be rewritten by the manufacturer. The upper limit of the number of rewritable times determined by the manufacturer is a regulation for use at room temperature, such as 100,000 times at 25° C. for each block. However, there is a possibility that the actual upper limit of the rewritable number of times may be lower than the number of times indicated by the manufacturer due to the effect of temperature. Furthermore, there is no means for a user who wants to rewrite the nonvolatile memory T10 under high temperature conditions to estimate the limit (lifetime) of the number of rewrites of the nonvolatile memory T under high temperature conditions. Therefore, when the production line 60 is in operation, an error that the number of rewrites exceeds the upper limit may occur.
 そこで、本実施形態に係るR/W1は、不揮発性メモリT10を有するRFIDタグTと無線通信を行って、不揮発性メモリT10へのデータの記憶を以下のように制御する。すなわち、メモリ領域管理部13により不揮発性メモリT10のメモリ領域T50の一部を書き換え領域T60に指定し、さらに、前記書き換え領域T60内の第1指定領域T11と第2指定領域T12とを指定する。また、データ書き換え部14により、第1指定領域T11を書き換えて不揮発性メモリT10にデータを記憶させる。さらに、ダミーデータ書き換え部15により、データ書き換え部14が第1指定領域T11を書き換えて不揮発性メモリT10にデータを記憶させた場合に、ダミーデータにより第2指定領域T12を複数回書き換える。そして、書き換え成否判定部16により、ダミーデータの書き換えの成否を判定し、ダミーデータの書き換えが成功しなかった場合、書き換え領域T60が書き換え制限に達したと判定する。 Therefore, the R/W 1 according to this embodiment performs wireless communication with the RFID tag T having the nonvolatile memory T10, and controls storage of data in the nonvolatile memory T10 as follows. That is, the memory area management unit 13 designates a part of the memory area T50 of the nonvolatile memory T10 as the rewriting area T60, and further designates the first designated area T11 and the second designated area T12 in the rewriting area T60. . Further, the data rewriting section 14 rewrites the first designated area T11 to store the data in the nonvolatile memory T10. Furthermore, when the data rewriting section 14 rewrites the first designated area T11 and stores the data in the nonvolatile memory T10, the dummy data rewriting section 15 rewrites the second designated area T12 with the dummy data a plurality of times. Then, the rewrite success/failure determination unit 16 determines whether or not the dummy data has been successfully rewritten, and if the rewrite of the dummy data has not succeeded, it is determined that the rewrite area T60 has reached the rewrite limit.
 これにより、第2指定領域T12は、第1指定領域T11よりも書き換え回数が常に多くなり、第1指定領域T11よりも先に第2指定領域T12の書き換え回数が上限に達する。 As a result, the number of times of rewriting in the second specified area T12 is always greater than that in the first specified area T11, and the number of times of rewriting in the second specified area T12 reaches the upper limit before the number of times of rewriting in the first specified area T11.
 また、書き換え成否判定部16により、ダミーデータの書き換えの成否を判定することにより、書き換え領域T60の書き換え回数が上限に達したことを判定することができる。 Also, by determining whether the dummy data has been rewritten successfully by the rewrite success/failure determination unit 16, it can be determined that the number of rewrites in the rewrite area T60 has reached the upper limit.
 これにより、R/W1は、データを書き換える第1指定領域T11の書き換え回数が上限に達してエラーを生じる前に、書き換え領域T60が書き換え制限に達したと判定することができる。そのため、前記エラーが生じる前に前記エラーを回避する何らかの対応を行うことができる。 As a result, the R/W1 can determine that the rewrite area T60 has reached the rewrite limit before the number of rewrites in the first designated area T11 where data is rewritten reaches the upper limit and an error occurs. Therefore, some action can be taken to avoid the error before it occurs.
 その結果、高温状況下での使用等の記憶部の書き換え回数の限度を推定することができない場合においても、タグの不揮発性メモリT10における上限を超える書き換えによるエラーを防ぐことができる。 As a result, even if it is not possible to estimate the limit of the number of times of rewriting of the storage unit, such as when the tag is used under high temperature conditions, it is possible to prevent errors due to rewriting exceeding the upper limit in the nonvolatile memory T10 of the tag.
 言い換えると、本実施形態に係るR/W1によれば、高温の乾燥炉等から出た直後、RFIDタグTの温度が高い状態であってもRFIDタグTの書き換え可能な回数の上限を気にせずにRFIDタグTと無線通信を行うことができる。そのため、RFIDタグTの温度が下がるのを待たず、すぐに製品を次の工程へ送ることができるので、高温の乾燥炉を備える生産ライン60での使用も可能となる。 In other words, according to the R/W 1 according to the present embodiment, even if the temperature of the RFID tag T is high immediately after coming out of a high-temperature drying oven or the like, the upper limit of the number of times the RFID tag T can be rewritten is taken care of. wireless communication with the RFID tag T can be performed. Therefore, the product can be immediately sent to the next process without waiting for the temperature of the RFID tag T to drop, so it can be used in the production line 60 equipped with a high-temperature drying oven.
 §2 構成例
 (RFIDリーダシステム)
 図1に示すように、RFIDリーダシステム100は、R/W1と、複数のRFIDタグTを備えている。RFIDリーダシステム100は、R/W1とRFIDタグTとの間で無線通信を行うことにより、RFIDタグTからのデータの読み取りやRFIDタグTへのデータの書き込みを行うシステムである。なお、RFIDリーダシステム100に含まれるR/W1及びRFIDタグTの数は任意である。
§2 Configuration example (RFID reader system)
As shown in FIG. 1, the RFID reader system 100 has an R/W 1 and a plurality of RFID tags T. As shown in FIG. The RFID reader system 100 is a system that reads data from the RFID tag T and writes data to the RFID tag T by performing wireless communication between the R/W 1 and the RFID tag T. FIG. The number of R/Ws 1 and RFID tags T included in the RFID reader system 100 is arbitrary.
 (RFIDタグ)
 図1及び図4から図6を用いてRFIDタグTについて説明する。図4は、RFIDリーダシステム100のRFIDタグTの一例を示す斜視図である。図5は、図4のA-A断面図である。図6は、図4のB-B断面図である。図1及び図4から図6に示すように、RFIDタグ(タグ)Tは、外装部T20と、アンテナコイルT21と、回路基板T22と、ICチップT24と、抵抗T23と、を備えている。
(RFID tag)
The RFID tag T will be described with reference to FIGS. 1 and 4 to 6. FIG. FIG. 4 is a perspective view showing an example of the RFID tag T of the RFID reader system 100. As shown in FIG. FIG. 5 is a cross-sectional view taken along line AA of FIG. 6 is a cross-sectional view taken along the line BB of FIG. 4. FIG. As shown in FIGS. 1 and 4 to 6, the RFID tag (tag) T includes an exterior T20, an antenna coil T21, a circuit board T22, an IC chip T24, and a resistor T23.
 外装部T20は、アンテナコイルT21と、回路基板T22と、抵抗T23と、ICチップT24と、を覆う。アンテナコイルT21は、回路基板T22の外周部に沿うように回路基板T22上に設けられ、R/W1と電波を送受信する。抵抗T23は、アンテナコイルT21により発生する電流を調整する。ICチップT24は、回路基板T22上に設けられ、不揮発性メモリT10を有する。 The exterior part T20 covers the antenna coil T21, the circuit board T22, the resistor T23, and the IC chip T24. The antenna coil T21 is provided on the circuit board T22 along the outer circumference of the circuit board T22, and transmits and receives radio waves to and from the R/W1. Resistor T23 adjusts the current generated by antenna coil T21. The IC chip T24 is provided on the circuit board T22 and has a nonvolatile memory T10.
 不揮発性メモリT10は、RFIDタグTが使用する各種データを記憶する。不揮発性メモリT10は、例えば、フラッシュメモリ、EEPROM(登録商標)、FeRAM(強誘電体メモリ)、ReRAM(抵抗変化型メモリ)、MRAM(磁気メモリ)等を、適宜採用することができる。不揮発性メモリT10のメモリ領域について、詳しくは後述する。 The nonvolatile memory T10 stores various data used by the RFID tag T. Flash memory, EEPROM (registered trademark), FeRAM (ferroelectric memory), ReRAM (resistance change memory), MRAM (magnetic memory), etc., can be appropriately adopted as the nonvolatile memory T10, for example. The memory area of the nonvolatile memory T10 will be described later in detail.
 (R/W)
 図1から図3及び図7を用いて、R/W1についてについて説明する。図7は、RFIDリーダシステム100のアンテナ2の一例を示す斜視図である。R/W1は、不揮発性メモリT10を有するRFIDタグTと無線通信を行って、前記不揮発性メモリT10へのデータの記憶を制御する。図1に示すように、R/W1は、アンテナ2と、コントローラ3と、を備えている。
(R/W)
R/W1 will be described with reference to FIGS. 1 to 3 and 7. FIG. FIG. 7 is a perspective view showing an example of the antenna 2 of the RFID reader system 100. As shown in FIG. The R/W1 performs wireless communication with an RFID tag T having a nonvolatile memory T10 to control storage of data in the nonvolatile memory T10. As shown in FIG. 1, R/W 1 has antenna 2 and controller 3 .
 アンテナ2は、図2に示すように、例えば、RFIDタグTに対向する位置に設置され、RFID技術を用いて複数のRFIDタグTと無線通信を行う。アンテナ2の配置位置は、前記に限らず、通信を所望するRFIDタグTがアンテナ2の交信可能な範囲内に位置するように配置されていればよい。 As shown in FIG. 2, the antenna 2 is installed, for example, at a position facing the RFID tags T, and performs wireless communication with a plurality of RFID tags T using RFID technology. The arrangement position of the antenna 2 is not limited to the above, and may be arranged so that the RFID tag T with which communication is desired is located within the communicable range of the antenna 2 .
 アンテナ2は、交信可能な範囲内に同時に存在する複数のRFIDタグTと順次交信するマルチアクセスを行うことができる。アンテナ2は、送信部及び受信部を備えていてもよい。アンテナ2は、図2、図3及び図7に示すように、例えば、略直方体の筐体を有し、コントローラ3と通信線2aにより接続されている。 The antenna 2 can perform multi-access to sequentially communicate with a plurality of RFID tags T existing simultaneously within a communicable range. Antenna 2 may comprise a transmitter and a receiver. As shown in FIGS. 2, 3 and 7, the antenna 2 has, for example, a substantially rectangular parallelepiped housing, and is connected to the controller 3 via a communication line 2a.
 (コントローラ)
 コントローラ3は、アンテナ2を介して、RFIDタグTの不揮発性メモリT10へのデータの記憶を制御する。具体的には、例えば、コントローラ3は、アンテナ2を介して、各RFIDタグTにデータを書き込む、または、各RFIDタグTからデータを読み出す。コントローラ3は、図1に示すように、記憶部4と、通信部5と、制御部10と、を備えている。
(controller)
The controller 3 controls storage of data in the non-volatile memory T10 of the RFID tag T via the antenna 2. FIG. Specifically, for example, the controller 3 writes data to each RFID tag T or reads data from each RFID tag T via the antenna 2 . The controller 3 includes a storage unit 4, a communication unit 5, and a control unit 10, as shown in FIG.
 記憶部4は、例えば、ハードディスクドライブ、ソリッドステートドライブ等の補助記憶装置である。記憶部4は、制御部10が実行する各種のプログラム、およびプログラムによって使用されるデータを格納する。また、記憶部4には、例えば、各RFIDタグTのUID(ユーザ識別子)、当該推定機能付RWコマンドに含まれていた更新データ、ダミーデータ等を記憶する。 The storage unit 4 is, for example, an auxiliary storage device such as a hard disk drive or solid state drive. The storage unit 4 stores various programs executed by the control unit 10 and data used by the programs. The storage unit 4 also stores, for example, the UID (user identifier) of each RFID tag T, the update data included in the RW command with the estimation function, dummy data, and the like.
 通信部5は、サーバ等のR/W1の上位機器200と情報の送受信を行う。なお、アンテナ2と制御部10との情報の送受信は、通信部5を介して行われてもよく、アンテナ2と制御部10とが直接情報を送受信してもよい。また、通信部5の役割をアンテナ2が担っていてもよい。 The communication unit 5 transmits and receives information to and from the R/W 1 host device 200 such as a server. Information may be transmitted and received between the antenna 2 and the control unit 10 via the communication unit 5, or the information may be transmitted and received directly between the antenna 2 and the control unit 10. Also, the role of the communication unit 5 may be played by the antenna 2 .
 (制御部)
 制御部10は、CPU(Central Processing Unit)、RAM(Random Access Memory)、ROM(Read Only Memory)等を含み、情報処理に応じて各構成要素の制御を行う。制御部10は、図1に示すように、コマンド取得部11と、UID判定部12と、メモリ領域管理部13と、データ書き換え部14、ダミーデータ書き換え部15と、書き換え成否判定部16と、報知部17と、を備えている。
(control part)
The control unit 10 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), etc., and controls each component according to information processing. As shown in FIG. 1, the control unit 10 includes a command acquisition unit 11, a UID determination unit 12, a memory area management unit 13, a data rewrite unit 14, a dummy data rewrite unit 15, a rewrite success/failure determination unit 16, A notification unit 17 is provided.
 コマンド取得部11は、サーバ等のR/W1の上位機器200から、コマンドを受信する。前記コマンドは、例えば、タグ検索コマンド及び推定機能付RWコマンドである。タグ検索コマンドは、ユーザが書き込みを所望するRFIDタグTがアンテナ2の交信可能領域内に位置するか否かの確認を指示する信号である。コマンド取得部11は、タグ検索コマンドを取得すると、アンテナ2の交信可能領域内に位置しているRFIDタグTのUID(ユーザ識別子)を前記RFIDタグTから読み出す。 The command acquisition unit 11 receives a command from the host device 200 of R/W1 such as a server. The commands are, for example, a tag search command and an RW command with an estimation function. The tag search command is a signal for confirming whether or not the RFID tag T to which the user wishes to write is located within the communicable area of the antenna 2 . When the command acquisition unit 11 acquires the tag search command, it reads the UID (user identifier) of the RFID tag T positioned within the communicable area of the antenna 2 from the RFID tag T. FIG.
 推定機能付RWコマンドは、RFIDタグTへのデータの書き換えを指示する信号である。推定機能付RWコマンドには、RFIDタグTに書き込むため更新データ(データ)と、前記更新データを書き込む位置を示す情報が含まれている。具体的には、コマンド取得部11は、推定機能付RWコマンドを取得すると、データ書き換え部14に推定機能付RWコマンドを取得した旨を示すコマンド取得信号を送信する。 The RW command with estimation function is a signal that instructs the rewriting of data to the RFID tag T. The RW command with estimation function includes update data (data) to be written to the RFID tag T and information indicating the position to write the update data. Specifically, when the RW command with estimation function is acquired, the command acquisition unit 11 transmits a command acquisition signal indicating that the RW command with estimation function has been acquired to the data rewriting unit 14 .
 UID判定部12は、記憶部4を参照し、コマンド取得部11がRFIDタグTから読み出したUIDが、所望のRFIDタグTであるか否かを判定する。コマンド取得部11がRFIDタグTから読み出したUIDが、所望のRFIDタグTである場合、UID判定部12は、RFIDタグTがアンテナ2の交信可能領域内に位置するとの検索結果を、上位機器200に送信する。コマンド取得部11がRFIDタグTから読み出したUIDが、所望のRFIDタグTではない場合、UID判定部12は、エラー結果を上位機器200に送信する。 The UID determination unit 12 refers to the storage unit 4 and determines whether the UID read from the RFID tag T by the command acquisition unit 11 is the desired RFID tag T. If the UID read from the RFID tag T by the command acquisition unit 11 is the desired RFID tag T, the UID determination unit 12 outputs the search result indicating that the RFID tag T is located within the communicable area of the antenna 2 to the host device. 200. If the UID read from the RFID tag T by the command acquisition unit 11 is not the desired RFID tag T, the UID determination unit 12 transmits an error result to the host device 200 .
 メモリ領域管理部13は、不揮発性メモリT10のデータの記憶可能領域であるメモリ領域T50の一部を書き換え領域T60に指定し、さらに、書き換え領域T60内の第1指定領域T11と第2指定領域T12とを指定する。書き換え領域T60は、メモリ領域T50において任意の範囲で設定できる領域である。第1指定領域T11は、更新データを書き込む領域である。第2指定領域T12は、後述するダミーデータを書き込む領域である。第2指定領域T12では、更新データの書き込みは禁止となる。 The memory area management unit 13 designates a part of the memory area T50, which is the data storable area of the nonvolatile memory T10, as the rewrite area T60, and further designates a first designated area T11 and a second designated area within the rewrite area T60. and T12. The rewrite area T60 is an area that can be set in any range in the memory area T50. The first specified area T11 is an area in which update data is written. The second designated area T12 is an area in which dummy data, which will be described later, is written. Writing of update data is prohibited in the second designated region T12.
 具体的に、図8を用いて説明する。図8は、RFIDタグTの書き込み領域T60の一例を説明するメモリマップである。図8に示すように、メモリ領域管理部13は、例えば、メモリ領域T50において、ブロックB123及びブロックB124を書き換え領域T60に指定する。さらに、メモリ領域管理部13は、書き換え領域T60内のブロックB124を第2指定領域T12に指定し、書き換え領域T60の第2指定領域T12以外の領域であるブロックB123を第1指定領域T11に指定する。つまり、第2指定領域T12は、書き換え領域T60の任意のブロックであり、第1指定領域T11は、書き換え領域T60における前記任意のブロック以外のブロックである。 A specific explanation will be given using FIG. FIG. 8 is a memory map illustrating an example of the write area T60 of the RFID tag T. As shown in FIG. As shown in FIG. 8, the memory area management unit 13 designates, for example, block B123 and block B124 in memory area T50 as rewrite area T60. Further, the memory area management unit 13 designates the block B124 in the rewriting area T60 as the second designated area T12, and designates the block B123, which is the area other than the second designated area T12 in the rewriting area T60, as the first designated area T11. do. That is, the second designated area T12 is an arbitrary block in the rewrite area T60, and the first designated area T11 is a block other than the arbitrary block in the rewrite area T60.
 なお、説明を容易にするために、第1指定領域T11及び第2指定領域T12について1つのブロックを指定したが、前記に限らない。第1指定領域T11及び第2指定領域T12は複数のブロックで構成されていてもよい。書き換え領域T60のブロック数は、第1指定領域T11のブロック数と第2指定領域T12のブロック数との和と等しくなる。 For ease of explanation, one block is specified for the first specified region T11 and the second specified region T12, but this is not the only option. The first designated area T11 and the second designated area T12 may be composed of a plurality of blocks. The number of blocks in the rewriting area T60 is equal to the sum of the number of blocks in the first specified area T11 and the number of blocks in the second specified area T12.
 また、第1指定領域T11と第2指定領域T12とは隣接していなくてもよい。例えば、ブロックB2及びブロックB123が書き換え領域T60である場合、ブロックB2が第1指定領域T11に指定され、ブロックB123が第2指定領域T12に指定されてもよい。 Also, the first specified region T11 and the second specified region T12 do not have to be adjacent to each other. For example, when the block B2 and the block B123 are the rewrite area T60, the block B2 may be designated as the first designated area T11 and the block B123 may be designated as the second designated area T12.
 メモリ領域管理部13は、予め、書き換え領域T60と、第1指定領域T11と、第2指定領域T12と、を指定し、上位機器200から推定機能付RWコマンドが発信される前に、上位機器200に第1指定領域T11を送信する。メモリ領域管理部13が第1指定領域T11を上位機器200に送信するタイミングは、例えば、タグ検索コマンドの結果を、UID判定部12が上位機器200に送信するタイミングであってもよい。上位機器200による推定機能付RWコマンドは、メモリ領域管理部13から送信された第1指定領域T11内において、更新データの書き込む位置を決定し生成される。 The memory area management unit 13 designates the rewriting area T60, the first designated area T11, and the second designated area T12 in advance, and before the RW command with the estimation function is transmitted from the higher-level device 200, the upper-level device 200, the first designated area T11 is transmitted. The timing at which the memory area management unit 13 transmits the first designated area T11 to the higher-level device 200 may be the timing at which the UID determination unit 12 transmits the result of the tag search command to the higher-level device 200, for example. The RW command with estimation function by the host device 200 is generated by determining the position to write the update data in the first designated area T11 transmitted from the memory area management unit 13 .
 また、メモリ領域管理部13は、後述する書き換え成否判定部16より、書き換え領域T60が書き換え制限に達したと判定された場合、メモリ領域T50において書き換え領域T60を変更する。 Further, when the rewrite success/failure determination unit 16, which will be described later, determines that the rewrite area T60 has reached the rewrite limit, the memory area management unit 13 changes the rewrite area T60 in the memory area T50.
 図8を用いて具体的に説明する。書き換え成否判定部16より、書き換え領域T60が書き換え制限に達したと判定された場合、メモリ領域管理部13は以下のように動作する。メモリ領域管理部13は、例えば、書き換え領域T60をブロックB123及びブロックB124から、ブロックB1及びブロックB2に変更する。そして、さらに、メモリ領域管理部13は、書き換え領域T60内のブロックB2を第2指定領域T12に指定し、書き換え領域T60の第2指定領域T12以外の領域であるブロックB1を第1指定領域T11に指定する。 A specific explanation will be given using FIG. When the rewrite success/failure determination unit 16 determines that the rewrite area T60 has reached the rewrite limit, the memory area management unit 13 operates as follows. The memory area management unit 13, for example, changes the rewriting area T60 from the blocks B123 and B124 to the blocks B1 and B2. Further, the memory area management unit 13 designates the block B2 in the rewrite area T60 as the second designated area T12, and designates the block B1, which is the area other than the second designated area T12 in the rewrite area T60, as the first designated area T11. to be specified.
 このように、メモリ領域管理部13は、メモリ領域T50を所定の数に分割して書き換え領域T60を設定することで、書き換え制限に達した第2指定領域T12を含む書き換え領域T60とは別の領域に、新たな書き換え領域T60を設定することができる。 In this manner, the memory area management unit 13 divides the memory area T50 into a predetermined number and sets the rewrite area T60, thereby dividing the rewrite area T60 into the rewrite area T60 including the second designated area T12 that has reached the rewrite limit. A new rewrite area T60 can be set in the area.
 これにより、書き換え領域T60における第2指定領域T12が書き換え制限に達しても、メモリ領域T50内の異なる領域に自動で新たな書き換え領域T60を設定することができるので、ユーザの負担を無くしつつ、同じ不揮発性メモリT10を繰り返し使用することができる。 As a result, even if the second specified area T12 in the rewrite area T60 reaches the rewrite limit, a new rewrite area T60 can be automatically set in a different area within the memory area T50. The same nonvolatile memory T10 can be used repeatedly.
 データ書き換え部14は、第1指定領域T11を書き換えて不揮発性メモリT10に更新データを記憶させる。具体的には、データ書き換え部14は、コマンド取得部11からコマンド取得信号を受信すると、第1指定領域T11における推定機能付RWコマンドに示された位置のデータを更新データに書き換え、不揮発性メモリT10に書き換えた更新データを記憶させる。 The data rewriting unit 14 rewrites the first designated area T11 and stores the updated data in the nonvolatile memory T10. Specifically, upon receiving the command acquisition signal from the command acquisition unit 11, the data rewriting unit 14 rewrites the data at the position indicated by the RW command with estimation function in the first specified region T11 to the update data, and stores the data in the nonvolatile memory. The rewritten update data is stored in T10.
 また、データ書き換え部14は、前記書き換え後、前記書き換えを行った位置のデータを読み取り、記憶部4に記憶されている当該推定機能付RWコマンドに含まれていた更新データと比較し、更新データの書き換えに成功したか否かを判定する。データ書き換え部14が、更新データの書き換えが成功したと判定した場合、データ書き換え部14は、ダミーデータ書き換え部15に更新データの書き換えが成功したことを示す信号を送信する。データ書き換え部14が、更新データの書き換えが成功しなかったと判定した場合、データ書き換え部14は、上位機器200にエラーを送信する。 After the rewriting, the data rewriting unit 14 reads the data at the rewritten position, compares it with the update data included in the RW command with estimation function stored in the storage unit 4, is successfully rewritten. When the data rewriting unit 14 determines that the update data has been successfully rewritten, the data rewriting unit 14 transmits a signal indicating that the update data has been successfully rewritten to the dummy data rewriting unit 15 . When the data rewriting unit 14 determines that the update data has not been successfully rewritten, the data rewriting unit 14 transmits an error to the host device 200 .
 ダミーデータ書き換え部15は、データ書き換え部14が第1指定領域T11における前記位置のデータを書き換えて不揮発性メモリT10に更新データを記憶させた場合に、ダミーデータにより第2指定領域T12を複数回書き換える。具体的には、ダミーデータ書き換え部15は、データ書き換え部14からの更新データの書き換えが成功したことを示す信号を受信すると、第2指定領域T12をダミーデータで複数回書き換える。前記複数回は例えば、3回としてもよい。 When the data rewriting unit 14 rewrites the data at the position in the first specified region T11 and stores the updated data in the nonvolatile memory T10, the dummy data rewriting unit 15 rewrites the second specified region T12 a plurality of times with the dummy data. rewrite. Specifically, when the dummy data rewriting section 15 receives a signal from the data rewriting section 14 indicating that the update data has been successfully rewritten, the dummy data rewriting section 15 rewrites the second designated region T12 with dummy data a plurality of times. The plurality of times may be, for example, three times.
 これにより、第2指定領域T12の書き換え回数は、常に第1指定領域T11の書き換え回数よりも多くなり、第1指定領域T11よりも早く第2指定領域T12が書き換え制限に達する。言い換えると、第1指定領域T11の書き換え回数は、常に第2指定領域T12の書き換え回数よりも少ないため、第2指定領域T12が書き換え回数の上限に達するまで、第1指定領域T11は常に書き換えられる。 As a result, the number of rewrites in the second specified area T12 is always greater than the number of rewrites in the first specified area T11, and the second specified area T12 reaches the rewrite limit earlier than the first specified area T11. In other words, the number of times of rewriting of the first specified area T11 is always smaller than the number of times of rewriting of the second specified area T12, so the first specified area T11 is always rewritten until the second specified area T12 reaches the upper limit of the number of times of rewriting. .
 前記第2指定領域T12を書き換える前記ダミーデータは、前記複数回の回ごとに異なる。具体的には、ダミーデータとして、オール0データ(000・・・)、01データ(010101・・・)、10データ(101010・・・)及びオール1データ(111・・・)などの異なるデータを用いて複数回の書き換えを行う。このような単純なパターンの異なるデータをダミーデータとして使用することで、エラーを検知しやすくなる。 The dummy data for rewriting the second specified area T12 is different for each of the multiple times. Specifically, different data such as all 0 data (000...), 01 data (010101...), 10 data (101010...) and all 1 data (111...) are used as dummy data. is used to rewrite multiple times. By using such data with different simple patterns as dummy data, it becomes easier to detect errors.
 書き換え成否判定部16は、ダミーデータの書き換えの成否を判定する。具体的には、ダミーデータ書き換え部15による、ダミーデータの書き換えが終了すると、第2指定領域T12の所定の位置のデータを読み取り、記憶部4に記憶されているダミーデータと比較し、ダミーデータの書き換えの成否を判定する。 The rewrite success/failure determination unit 16 determines whether the dummy data has been rewritten successfully. Specifically, when the dummy data rewriting section 15 finishes rewriting the dummy data, the data in the predetermined position of the second designated area T12 is read, compared with the dummy data stored in the storage section 4, and the dummy data determines whether the rewriting of is successful or not.
 報知部17は、書き換え成否判定部16により、前記ダミーデータの書き換えが成功しなかったと判定された場合、ユーザに報知を行う。これにより、ユーザに対応を促すことができる。前記報知は、RFIDタグTの交換を勧めるメッセージ含むでもよく、更新データの書き込み位置の変更を勧めるメッセージを含むものであってもよい。 The notification unit 17 notifies the user when the rewrite success/failure determination unit 16 determines that the dummy data has not been successfully rewritten. This can prompt the user to take action. The notification may include a message recommending replacement of the RFID tag T, or a message recommending a change of the writing position of the update data.
 また、報知部17は、書き換え成否判定部16により、ダミーデータの書き換えが成功しなかったと判定された場合、その旨を示す信号を上位機器200に送信する。言い換えると、前記の場合、報知部17は通信部5を介して上位機器200に報知を行う。これにより、上位機器200はRFIDタグTの不揮発性メモリT10が書き換え制限に達したことを知ることができる。そのため、上位機器200は、RFIDタグTの不揮発性メモリT10における上限を超える書き換えによるエラーを生じる前に、RFIDタグTの不揮発性メモリT10の交換や更新データの書き込み位置の変更等を行うことができる。 Further, when the rewrite success/failure determination unit 16 determines that the dummy data has not been successfully rewritten, the notification unit 17 transmits a signal to that effect to the host device 200 . In other words, in the above case, the notification unit 17 notifies the host device 200 via the communication unit 5 . Thereby, the host device 200 can know that the nonvolatile memory T10 of the RFID tag T has reached the rewrite limit. Therefore, the host device 200 can replace the nonvolatile memory T10 of the RFID tag T, change the writing position of the update data, etc. before an error occurs due to rewriting exceeding the upper limit in the nonvolatile memory T10 of the RFID tag T. can.
 一方、報知部17は、ダミーデータの書き換えが成功したと判定した場合、その旨を示す信号を上位機器200に送信する。 On the other hand, when the notification unit 17 determines that the rewriting of the dummy data has succeeded, it transmits a signal to that effect to the host device 200 .
 §3 動作例
 (データ記憶処理の流れ)
 図9は、RFIDリーダシステム100の処理の流れの一例を示すシーケンス図である。図9に基づき、本実施形態に係るデータ記憶処理の流れについて説明する。
§3 Operation example (flow of data storage processing)
FIG. 9 is a sequence diagram showing an example of the processing flow of the RFID reader system 100. As shown in FIG. Based on FIG. 9, the flow of data storage processing according to this embodiment will be described.
 時刻s1において、R/W1は、上位機器200からタグ検索コマンドを取得すると、時刻s2において、UIDリード動作を実行し、アンテナ2の交信可能領域内に位置しているRFIDタグTのUID(ユーザ識別子)を前記RFIDタグTから読み取る。 At time s1, R/W1 acquires a tag search command from host device 200. At time s2, R/W1 executes a UID read operation to retrieve the UID (user identifier) is read from the RFID tag T.
 そして、R/W1は、時刻s3において、RFIDタグTから読み取ったUIDが、所望のRFIDタグTであるか否かを判定する。 Then, the R/W 1 determines whether the UID read from the RFID tag T is the desired RFID tag T at time s3.
 前記読み取ったUIDに、所望のRFIDタグTが含まれている場合、R/W1は、時刻s4において、書き換え領域T60と、第1指定領域T11と、第2指定領域T12と、を指定する(メモリ領域管理ステップ)。また、時刻s5において、R/W1は、RFIDタグTがアンテナ2の交信可能領域内に位置するとの検知検索結果と第1指定領域T11とを、上位機器200に送信する。 If the read UID contains the desired RFID tag T, the R/W1 designates the rewriting area T60, the first designated area T11, and the second designated area T12 at time s4 ( memory area management step). At time s5, the R/W 1 transmits to the host device 200 the detection search result indicating that the RFID tag T is located within the communicable area of the antenna 2 and the first specified area T11.
 前記読み取ったUIDに、所望のRFIDタグTが含まれていない場合、R/W1は、エラー検索結果を上位機器200に送信する。 When the desired RFID tag T is not included in the read UID, the R/W 1 transmits an error search result to the host device 200.
 R/W1からの検知検索結果を受信すると、上位機器200は、時刻s6において、R/W1に推定機能付RWコマンドを送信する。R/W1は上位機器200から推定機能付RWコマンドを取得すると、時刻s7において、更新データライト動作を実行し、下記の動作を行う。すなわち、R/W1は、推定機能付RWコマンドにより指定された第1指定領域T11の位置のデータを更新データに書き換えて不揮発性メモリT10に更新データを記憶させる(データ書き換えステップ)。 Upon receiving the detection search result from R/W1, host device 200 transmits an RW command with an estimation function to R/W1 at time s6. When the R/W 1 acquires the RW command with estimation function from the host device 200, at time s7, it executes the update data write operation and performs the following operations. That is, the R/W 1 rewrites the data at the position of the first designated region T11 designated by the RW command with estimation function to update data and stores the update data in the nonvolatile memory T10 (data rewrite step).
 その後、R/W1は、時刻s8において、更新データ書き換え結果リード動作を実行し、時刻s7で書き換えを行った位置のデータを読み取り、時刻s9において、更新データの書き換えが成功したか否かを判定する。 After that, the R/W 1 executes an update data rewrite result read operation at time s8, reads the data in the rewritten position at time s7, and determines whether or not the update data has been successfully rewritten at time s9. do.
 R/W1は、時刻s9において、前記書き換えが成功したと判定した場合、時刻s10において、ダミーデータライト動作を実行し、ダミーデータにより第2指定領域T12を複数回書き換える(ダミーデータ書き換えステップ)。 When the R/W 1 determines at time s9 that the rewriting was successful, at time s10, it executes a dummy data write operation to rewrite the second designated region T12 with dummy data multiple times (dummy data rewriting step).
 その後、R/W1は、時刻s11において、ダミーデータ書き換え結果リード動作を実行し、ダミーデータが書き込まれた位置のデータを読み取り、時刻s12において、ダミーデータの書き換えの成否を判定する(書き換え成否判定ステップ)。 Thereafter, at time s11, the R/W1 executes a dummy data rewrite result read operation, reads the data at the position where the dummy data was written, and determines whether the dummy data has been rewritten successfully (rewrite success/failure determination) at time s12. step).
 時刻s12において、ダミーデータの書き換えが成功したと判定された場合、R/W1は、時刻s13において、ダミーデータの書き換えが成功したとの結果を上位機器200に送信する。また、時刻s12において、ダミーデータの書き換えが成功しなかったと判定された場合、R/W1は、時刻s13において、書き換え領域T60が書き換え制限に達したと判定し(書き換え成否判定ステップ)、その結果を上位機器200に送信し、ユーザに報知を行う。 When it is determined at time s12 that the dummy data has been successfully rewritten, the R/W 1 transmits to the host device 200 at time s13 a result indicating that the dummy data has been successfully rewritten. Further, when it is determined at time s12 that the dummy data has not been successfully rewritten, the R/W 1 determines at time s13 that the rewrite area T60 has reached the rewrite limit (rewrite success/failure determination step). is sent to the host device 200 to notify the user.
 なお、時刻s12における判定が、ダミーデータの書き換えが成功したとの判定であった場合、時刻s7から時刻s12の動作は複数回繰り返されてもよい。前記繰り返される回数は、例えば、推定機能付RWコマンドにより設定される。 Note that if the determination at time s12 is that the dummy data has been successfully rewritten, the operation from time s7 to time s12 may be repeated multiple times. The number of repetitions is set by the RW command with estimation function, for example.
 前述の処理を行うことにより、第2指定領域T12は、第1指定領域T11よりも書き換え回数が常に多くなり、第1指定領域T11よりも先に第2指定領域T12の書き換え回数が上限に達する。 By performing the above-described processing, the number of times of rewriting of the second designated area T12 is always greater than that of the first designated area T11, and the number of times of rewriting of the second designated area T12 reaches the upper limit before the first designated area T11. .
 また、書き換え成否判定部16により、ダミーデータの書き換えの成否を判定することにより、書き換え領域T60の書き換え回数が上限に達したことを判定することができる。 Also, by determining whether the dummy data has been rewritten successfully by the rewrite success/failure determination unit 16, it can be determined that the number of rewrites in the rewrite area T60 has reached the upper limit.
 これにより、R/W1は、データを書き換える第1指定領域T11の書き換え回数が上限に達してエラーを生じる前に、書き換え領域T60が書き換え制限に達したと判定することができる。そのため、前記エラーが生じる前に前記エラーを回避する何らかの対応を行うことができる。 As a result, the R/W1 can determine that the rewrite area T60 has reached the rewrite limit before the number of rewrites in the first designated area T11 where data is rewritten reaches the upper limit and an error occurs. Therefore, some action can be taken to avoid the error before it occurs.
 その結果、高温状況下での使用等、記憶部の書き換え回数の限度をあらかじめ推定することができない場合においても、タグの不揮発性メモリT10における上限を超える書き換えによるエラーを防ぐことができる。 As a result, even when the limit of the number of times the storage unit can be rewritten cannot be estimated in advance, such as when the tag is used under high temperature conditions, errors due to rewriting exceeding the upper limit in the non-volatile memory T10 of the tag can be prevented.
 〔ソフトウェアによる実現例〕
 通信制御装置(以下、「装置」と呼ぶ)の機能は、当該装置としてコンピュータを機能させるためのプログラムであって、当該装置の各制御ブロック(特に制御部に含まれる各部)としてコンピュータを機能させるためのプログラムにより実現することができる。
[Example of realization by software]
The function of a communication control device (hereinafter referred to as "device") is a program that causes a computer to function as the device, and causes the computer to function as each control block (especially each part included in the control unit) of the device. It can be realized by a program for
 この場合、前記装置は、前記プログラムを実行するためのハードウェアとして、少なくとも1つの制御装置(例えばプロセッサ)と少なくとも1つの記憶装置(例えばメモリ)を有するコンピュータを備えている。この制御装置と記憶装置により前記プログラムを実行することにより、前記各実施形態で説明した各機能が実現される。 In this case, the device comprises a computer having at least one control device (eg processor) and at least one storage device (eg memory) as hardware for executing the program. Each function described in each of the above embodiments is realized by executing the program using the control device and the storage device.
 前記プログラムは、一時的ではなく、コンピュータ読み取り可能な、1または複数の記録媒体に記録されていてもよい。この記録媒体は、前記装置が備えていてもよいし、備えていなくてもよい。後者の場合、前記プログラムは、有線または無線の任意の伝送媒体を介して前記装置に供給されてもよい。 The program may be recorded on one or more non-temporary, computer-readable recording media. The recording medium may or may not be included in the device. In the latter case, the program may be supplied to the device via any transmission medium, wired or wireless.
 また、前記各制御ブロックの機能の一部または全部は、論理回路により実現することも可能である。例えば、前記各制御ブロックとして機能する論理回路が形成された集積回路も本発明の範疇に含まれる。この他にも、例えば量子コンピュータにより前記各制御ブロックの機能を実現することも可能である。 Also, part or all of the functions of each control block can be realized by a logic circuit. For example, an integrated circuit in which logic circuits functioning as the respective control blocks are formed is also included in the scope of the present invention. In addition, it is also possible to implement the functions of the respective control blocks by, for example, a quantum computer.
 (まとめ)
 すなわち、本発明の一側面に係る通信制御装置は、不揮発性メモリを有するタグと無線通信を行って、前記不揮発性メモリへのデータの記憶を制御する通信制御装置であって、前記不揮発性メモリのメモリ領域の一部を書き換え領域に指定し、さらに、前記書き換え領域内の第1指定領域と第2指定領域とを指定するメモリ領域管理部と、前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させるデータ書き換え部と、前記データ書き換え部が前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させた場合に、ダミーデータにより前記第2指定領域を複数回書き換えるダミーデータ書き換え部と、前記ダミーデータの書き換えの成否を判定する書き換え成否判定部と、を備える。
(summary)
That is, a communication control device according to one aspect of the present invention is a communication control device that performs wireless communication with a tag having a nonvolatile memory and controls storage of data in the nonvolatile memory, a memory area management unit for specifying a part of the memory area of the rewriting area as a rewriting area, and further specifying a first specified area and a second specified area in the rewriting area; a data rewriting unit for storing the data in a memory, and when the data rewriting unit rewrites the first specified area and stores the data in the nonvolatile memory, the second specified area is rewritten a plurality of times by dummy data. A dummy data rewriting unit for rewriting, and a rewriting success/failure determination unit for determining success or failure of rewriting of the dummy data are provided.
 前記構成によれば、タグの不揮発性メモリの第1指定領域でデータを1回書き換えて記憶するごとに、ダミーデータ書き換え部は、第2指定領域においてダミーデータを複数回書き換える。そのため、第2指定領域は、第1指定領域よりも書き換え回数が常に多くなり、第1指定領域よりも先に書き換え回数が上限に達する。 According to the above configuration, each time data is rewritten and stored once in the first designated area of the non-volatile memory of the tag, the dummy data rewriting section rewrites the dummy data multiple times in the second designated area. Therefore, the number of times of rewriting is always greater in the second specified area than in the first specified area, and the number of times of rewriting reaches the upper limit before the first specified area.
 また、書き換え成否判定部により、第2指定領域の書き換え回数が上限に達した場合、ダミーデータの書き換えが成功しないため、ダミーデータの書き換えの成否により、書き換え領域が書き換え制限に達したことが判定できる。 In addition, if the number of rewrites in the second designated area reaches the upper limit, the rewrite success/failure determination unit determines that the rewrite area has reached the rewrite limit based on whether the rewrite of the dummy data succeeds or fails because the rewrite of the dummy data does not succeed. can.
 これにより、データを書き換える第1指定領域の書き換え回数が上限に達してエラーを生じる前に、書き換え領域が書き換え制限に達したと判定することができるため、前記エラーが生じる前に前記エラーを回避する何らかの対応を行うことができる。 As a result, it is possible to determine that the rewrite area has reached the rewrite limit before the number of rewrites in the first designated area in which data is rewritten reaches the upper limit and an error occurs, so that the error is avoided before the error occurs. can take some action to
 その結果、高温状況下使用等での記憶部の書き換え回数の限度をあらかじめ推定することができない場合においても、タグの不揮発性メモリにおける上限を超える書き換えによるエラーを防ぐことができる。 As a result, even if it is not possible to estimate in advance the limit of the number of times the storage unit can be rewritten, such as when used under high temperature conditions, it is possible to prevent errors due to rewriting exceeding the upper limit in the non-volatile memory of the tag.
 前記一側面に係る通信制御装置において、前記メモリ領域管理部は、前記書き換え成否判定部により前記ダミーデータの書き換えが成功しなかったと判定された場合、前記メモリ領域において前記書き換え領域を変更してもよい。 In the communication control device according to the one aspect, when the rewrite success/failure determination unit determines that the dummy data has not been successfully rewritten, the memory area management unit changes the rewrite area in the memory area. good.
 前記構成によれば、書き換え領域が書き換え制限に達した場合、メモリ領域管理部により書き換え領域を自動で変更することができる。これにより、書き換え領域が書き換え制限に達しても、同じ不揮発性メモリを繰り返し使用することができる。また、予めユーザが設定していた書き換え領域の変更を、システムの中で自動的に処理されるため、ユーザの負担を無くすことができる。 According to the above configuration, when the rewrite area reaches the rewrite limit, the memory area management unit can automatically change the rewrite area. As a result, even if the rewrite area reaches the rewrite limit, the same nonvolatile memory can be used repeatedly. In addition, since the change of the rewrite area set in advance by the user is automatically processed in the system, the burden on the user can be eliminated.
 前記一側面に係る通信制御装置において、前記第2指定領域を書き換える前記ダミーデータは、前記複数回の回ごとに異なっていてもよい。 In the communication control device according to the one aspect, the dummy data for rewriting the second designated area may be different for each of the plurality of times.
 前記構成によれば、異なるダミーデータで複数回の書き換えを行うことができるので、書き換え成否判定部におけるダミーデータの書き換えの成否の判定が容易となる。 According to the above configuration, different dummy data can be rewritten a plurality of times, so it becomes easy for the rewrite success/failure determination section to determine whether the dummy data has been successfully rewritten.
 前記一側面に係る通信制御装置において、前記第2指定領域は、前記書き換え領域の任意のブロックであり、前記第1指定領域は、前記書き換え領域における前記任意のブロック以外のブロックであってもよい。 In the communication control device according to the aspect, the second designated area may be an arbitrary block in the rewriting area, and the first designated area may be a block other than the arbitrary block in the rewriting area. .
 前記構成によれば、データ及びダミーデータの書き込み位置として、書き換え領域のブロックを指定することができる。 According to the above configuration, it is possible to designate a block of the rewrite area as the writing position of the data and dummy data.
 前記一側面に係る通信制御装置において、前記書き換え成否判定部は、前記ダミーデータの書き換えが成功しなかった場合、前記書き換え領域が書き換え制限に達したと判定してもよい。 In the communication control device according to the one aspect, the rewrite success/failure determination unit may determine that the rewrite area has reached a rewrite limit when the rewrite of the dummy data is not successful.
 前記構成によれば、ダミーデータの書き換えの成否により、書き換え領域が書き換え制限に達したと判定することができる。 According to the above configuration, it can be determined that the rewrite area has reached the rewrite limit depending on whether the rewrite of the dummy data is successful or not.
 前記一側面に係る通信制御装置において、前記書き換え成否判定部により、前記ダミーデータの書き換えが成功しなかったと判定された場合、ユーザに報知を行う報知部を備えていてもよい。 The communication control device according to the one aspect may include a notification unit that notifies a user when the rewrite success/failure determination unit determines that the dummy data has not been successfully rewritten.
 前記構成によれば、前記書き換え領域が書き換え制限に達したことが、報知部によりユーザに報知される。これにより、ユーザは、書き換え領域が書き換え制限に達したことを知ることができる。 According to the above configuration, the notification unit notifies the user that the rewrite area has reached the rewrite limit. This allows the user to know that the rewrite area has reached the rewrite limit.
 前記一側面に係る通信制御装置において、前記書き換え成否判定部により、前記ダミーデータの書き換えが成功しなかったと判定された場合、前記通信制御装置を介して上位機器に報知を行う報知部を備えていてもよい。 The communication control device according to the above aspect further includes a notification unit that notifies a higher-level device via the communication control device when the rewrite success/failure determination unit determines that the dummy data has not been successfully rewritten. may
 前記構成によれば、前記書き換え領域が書き換え制限に達したことを上位機器が受信できる。これにより、上位機器はタグのメモリが書き換え制限に達したことを知ることができ、タグの不揮発性メモリにおける上限を超える書き換えによるエラーを生じる前に、タグの更新データの書き込み位置の変更等を行うことができる。 According to the above configuration, the host device can receive that the rewrite area has reached the rewrite limit. As a result, the host device can know that the tag memory has reached the rewrite limit, and can change the writing position of the update data of the tag before an error occurs due to rewriting exceeding the upper limit in the non-volatile memory of the tag. It can be carried out.
 また、本発明の一側面に係るRFIDリーダシステムは、前記通信制御装置と、前記タグと、を備えている。 Further, an RFID reader system according to one aspect of the present invention includes the communication control device and the tag.
 また、本発明の一側面に係る通信制御プログラムは、前述の通信制御装置としてコンピュータを機能させるためのプログラムであって、前記メモリ領域管理部、前記データ書き換え部、前記ダミーデータ書き換え部、及び前記書き換え成否判定部としてコンピュータを機能する。 A communication control program according to one aspect of the present invention is a program for causing a computer to function as the above-described communication control device, and includes the memory area management unit, the data rewriting unit, the dummy data rewriting unit, and the The computer functions as a rewriting success/failure determination unit.
 また、本発明の一側面に係るデータ記憶方法は、不揮発性メモリを有するタグと無線通信を行って、前記不揮発性メモリへのデータの記憶を制御するデータ記憶方法であって、前記不揮発性メモリのメモリ領域の一部を書き換え領域に指定し、さらに、前記書き換え領域内の第1指定領域と第2指定領域とを指定するメモリ領域管理ステップと、前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させるデータ書き換えステップと、前記データ書き換えステップにおいて、前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させた場合に、ダミーデータにより前記第2指定領域を複数回書き換えるダミーデータ書き換えステップと、前記ダミーデータの書き換えの成否を判定する書き換え成否判定ステップと、を含む。 A data storage method according to one aspect of the present invention is a data storage method for controlling storage of data in the nonvolatile memory by performing wireless communication with a tag having the nonvolatile memory. a memory area management step of designating a part of the memory area of as a rewriting area and further designating a first designated area and a second designated area in the rewriting area; a data rewriting step of storing the data in a memory; and in the data rewriting step, when the first designated region is rewritten and the data is stored in the nonvolatile memory, a plurality of the second designated regions are rewritten by dummy data. and a rewrite success/failure determination step of determining success or failure of rewriting of the dummy data.
 本発明の各態様に係る通信制御装置は、コンピュータによって実現してもよく、この場合には、コンピュータを前記通信制御装置が備える各部(ソフトウェア要素)として動作させることにより前記通信制御装置をコンピュータにて実現させる通信制御装置の制御プログラム、及びそれを記録したコンピュータ読み取り可能な記録媒体も、本発明の範疇に入る。 The communication control device according to each aspect of the present invention may be realized by a computer. In this case, the communication control device is implemented by the computer by operating the computer as each part (software element) included in the communication control device. A control program for a communication control device realized by a computer and a computer-readable recording medium recording it are also included in the scope of the present invention.
 本発明は上述した各実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。 The present invention is not limited to the above-described embodiments, but can be modified in various ways within the scope of the claims, and can be obtained by appropriately combining technical means disclosed in different embodiments. is also included in the technical scope of the present invention.
  1 R/W(通信制御装置)
 13 メモリ領域管理部
 14 データ書き換え部
 15 ダミーデータ書き換え部
 16 書き換え成否判定部
 17 報知部
100 RFIDリーダシステム
200 上位機器
  T RFIDタグ(タグ)
T10 不揮発性メモリ
T11 第1指定領域
T12 第2指定領域
T50 メモリ領域
T60 書き換え領域
1 R/W (communication control unit)
13 memory area management unit 14 data rewrite unit 15 dummy data rewrite unit 16 rewrite success/failure determination unit 17 notification unit 100 RFID reader system 200 host device T RFID tag (tag)
T10 non-volatile memory T11 first designated area T12 second designated area T50 memory area T60 rewrite area

Claims (10)

  1.  不揮発性メモリを有するタグと無線通信を行って、前記不揮発性メモリへのデータの記憶を制御する通信制御装置であって、
     前記不揮発性メモリのメモリ領域の一部を書き換え領域に指定し、さらに、前記書き換え領域内の第1指定領域と第2指定領域とを指定するメモリ領域管理部と、
     前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させるデータ書き換え部と、
     前記データ書き換え部が前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させた場合に、ダミーデータにより前記第2指定領域を複数回書き換えるダミーデータ書き換え部と、
     前記ダミーデータの書き換えの成否を判定する書き換え成否判定部と、を備える、通信制御装置。
    A communication control device that performs wireless communication with a tag having a nonvolatile memory and controls storage of data in the nonvolatile memory,
    a memory area management unit that designates a part of the memory area of the nonvolatile memory as a rewritable area, and further designates a first designated area and a second designated area within the rewritable area;
    a data rewriting unit that rewrites the first specified area and stores the data in the nonvolatile memory;
    a dummy data rewriting section that rewrites the second designated area multiple times with dummy data when the data rewriting section rewrites the first designated area and stores the data in the nonvolatile memory;
    and a rewrite success/failure determination unit that determines success or failure of rewriting of the dummy data.
  2.  前記メモリ領域管理部は、前記書き換え成否判定部により前記ダミーデータの書き換えが成功しなかったと判定された場合、前記メモリ領域において前記書き換え領域を変更する、請求項1に記載の通信制御装置。 The communication control device according to claim 1, wherein the memory area management unit changes the rewrite area in the memory area when the rewrite success/failure determination unit determines that the dummy data has not been successfully rewritten.
  3.  前記第2指定領域を書き換える前記ダミーデータは、前記複数回の回ごとに異なる、請求項1または2に記載の通信制御装置。 3. The communication control device according to claim 1 or 2, wherein the dummy data for rewriting the second specified area is different for each of the plurality of times.
  4.  前記第2指定領域は、前記書き換え領域の任意のブロックであり、前記第1指定領域は、前記書き換え領域における前記任意のブロック以外のブロックである、請求項1から3のいずれか1項に記載の通信制御装置。 4. The method according to any one of claims 1 to 3, wherein said second designated area is an arbitrary block in said rewriting area, and said first designated area is a block other than said arbitrary block in said rewriting area. communication controller.
  5.  前記書き換え成否判定部は、前記ダミーデータの書き換えが成功しなかった場合、前記書き換え領域が書き換え制限に達したと判定する、請求項1から4のいずれか1項に記載の通信制御装置。 The communication control device according to any one of claims 1 to 4, wherein the rewrite success/failure determination unit determines that the rewrite area has reached a rewrite limit when the rewrite of the dummy data is unsuccessful.
  6.  前記書き換え成否判定部により、前記ダミーデータの書き換えが成功しなかったと判定された場合、ユーザに報知を行う報知部を備えている、請求項1から5のいずれか1項に記載の通信制御装置。 6. The communication control device according to any one of claims 1 to 5, further comprising a notification unit that notifies a user when the rewrite success/failure determination unit determines that the dummy data has not been successfully rewritten. .
  7.  前記書き換え成否判定部により、前記ダミーデータの書き換えが成功しなかったと判定された場合、前記通信制御装置を介して上位機器に報知を行う報知部を備えている、請求項1から6のいずれか1項に記載の通信制御装置。 7. The rewriting success/failure determination unit according to claim 1, further comprising a notification unit that notifies a higher-level device via the communication control device when it is determined that the dummy data has not been successfully rewritten. The communication control device according to item 1.
  8.  請求項1に記載の通信制御装置と、
     前記タグと、を備えている、RFIDリーダシステム。
    A communication control device according to claim 1;
    an RFID reader system comprising: the tag;
  9.  請求項1に記載の通信制御装置としてコンピュータを機能させるためのプログラムであって、前記メモリ領域管理部、前記データ書き換え部、前記ダミーデータ書き換え部、及び前記書き換え成否判定部としてコンピュータを機能させるための通信制御プログラム。 2. A program for causing a computer to function as the communication control device according to claim 1, for causing the computer to function as the memory area management section, the data rewriting section, the dummy data rewriting section, and the rewriting success/failure determination section. communication control program.
  10.  不揮発性メモリを有するタグと無線通信を行って、前記不揮発性メモリへのデータの記憶を制御するデータ記憶方法であって、
     前記不揮発性メモリのメモリ領域の一部を書き換え領域に指定し、さらに、前記書き換え領域内の第1指定領域と第2指定領域とを指定するメモリ領域管理ステップと、
     前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させるデータ書き換えステップと、
     前記データ書き換えステップにおいて、前記第1指定領域を書き換えて前記不揮発性メモリに前記データを記憶させた場合に、ダミーデータにより前記第2指定領域を複数回書き換えるダミーデータ書き換えステップと、
     前記ダミーデータの書き換えの成否を判定する書き換え成否判定ステップと、を含む、データ記憶方法。
    A data storage method for controlling storage of data in the nonvolatile memory by performing wireless communication with a tag having a nonvolatile memory,
    a memory area management step of designating a part of the memory area of the nonvolatile memory as a rewriting area, and further designating a first designated area and a second designated area within the rewriting area;
    a data rewriting step of rewriting the first specified area and storing the data in the nonvolatile memory;
    a dummy data rewriting step of rewriting the second designated area with dummy data a plurality of times when the data is stored in the nonvolatile memory by rewriting the first designated area in the data rewriting step;
    and a rewrite success/failure determination step of determining success or failure of rewriting of the dummy data.
PCT/JP2021/046853 2021-03-08 2021-12-17 Communication control device, communication control program, rfid reader system, and data storage method WO2022190513A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001147862A (en) * 1999-11-22 2001-05-29 Alps Electric Co Ltd Flash memory writing method
WO2008029457A1 (en) * 2006-09-06 2008-03-13 Fujitsu Limited Nonvolatile memory
JP2009093388A (en) * 2007-10-09 2009-04-30 Fujitsu Microelectronics Ltd Semiconductor integrated circuit device and control method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001147862A (en) * 1999-11-22 2001-05-29 Alps Electric Co Ltd Flash memory writing method
WO2008029457A1 (en) * 2006-09-06 2008-03-13 Fujitsu Limited Nonvolatile memory
JP2009093388A (en) * 2007-10-09 2009-04-30 Fujitsu Microelectronics Ltd Semiconductor integrated circuit device and control method therefor

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