WO2022186536A1

WO2022186536A1 - Light-emitting module, light device having same, and manufacturing method therefor

Info

Publication number: WO2022186536A1
Application number: PCT/KR2022/002583
Authority: WO
Inventors: 김대식; 니시다야스히로
Original assignee: 삼성전자주식회사
Priority date: 2021-03-05
Filing date: 2022-02-22
Publication date: 2022-09-09
Also published as: KR20220125393A

Abstract

The present invention relates to a light-emitting module, a light device having same, and a manufacturing method therefor. A method for manufacturing a light-emitting module comprises: forming a pattern on one surface of a transparent substrate through an etching; forming a quantum dot layer by printing a quantum dot material on the pattern; coating the quantum dot layer with a dichroic sheet and/or a multilayer thin film to form a dichroic reflection layer; coating the dichroic reflection layer with a transparent sheet to form a first transparent layer; bonding a light-emitting member to the first transparent layer so as to be bonded to the location corresponding to the location of the quantum dot layer; coating an outer surface of the light-emitting member with a first reflector to form a first reflective layer; and coating the other surface of the transparent substrate with a second reflector to form a second reflective layer.

Description

Light emitting module, light device having same, and manufacturing method thereof

The disclosed invention relates to a light emitting module including a quantum dot material and emitting light using the same, a manufacturing method thereof, and a light device having the light emitting module.

The display device includes a self-luminous display device that emits light by itself according to an image, and a non-light-emitting display device that blocks or passes light emitted from a separate light source according to the image.

A typical non-emission display device is a liquid crystal display device (LCD device). The liquid crystal display device may include a light device that emits light from the rear of the liquid crystal panel.

The light device requires a single or a plurality of white light sources. Such a light device is generally used as a white light source by combining a blue light emitting diode (LED), a green light emitting diode (LED), and a red light emitting diode (LED), or a white light source by combining a blue light emitting diode (LED) and a color conversion phosphor use it as

When a blue light emitting diode (LED) and a color conversion phosphor are combined to be used as a white light source, the white light source uses a phosphor having a quantum dot material (ie, called a quantum dot phosphor) as a color conversion phosphor. do. When manufacturing a white light source of such a light device, a light emitting diode chip (LED Chip) is bonded to a printed circuit board, electrodes of the light emitting diode chip are connected to the printed circuit board, and a quantum dot chip having a quantum dot material is used as a light emitting diode chip. After bonding on the (LED Chip), a glass and plastic mold for protecting the quantum dot material, which is vulnerable to heat, moisture, oxygen, etc., was wrapped around the quantum dot material using an encapsulation technology.

For this reason, the white light source of the conventional light device has a problem in that the volume is increased, the process for forming the glass and plastic molds is complicated, and the production cost is increased.

One aspect provides a method of manufacturing a light emitting module that performs a patterning process for forming a quantum dot (Quantum Dot (QD)) layer, a coating process for forming a color conversion member, and a bonding process for the light emitting member.

Another aspect provides a light emitting module manufactured by a patterning process, a coating process of a color conversion member, and a bonding process of a light emitting member, and a light device having the same.

A method of manufacturing a light emitting module according to an aspect includes forming a pattern on one surface of a transparent substrate through etching, printing a quantum dot material on the pattern to form a quantum dot layer, and at least one of a dichroic sheet and a multilayer thin film on the quantum dot layer to form a dichroic reflective layer, and by coating a transparent thin film on the dichroic reflective layer to form a first transparent layer, and bonding a light emitting member to the first transparent layer, but emitting light at a position corresponding to the position of the quantum dot layer Bonding the member, coating a first reflector on the outer surface of the light emitting member to form a first reflective layer, and coating a second reflector on the other surface of the transparent substrate to form a second reflective layer.

The first transparent layer is a transparent layer having a thickness less than a preset thickness.

Forming the first reflective layer includes coating the first reflector on the outer surface except for the first and second electrodes provided on the light emitting member.

The method of manufacturing a light emitting module according to an aspect further includes connecting the first and second electrodes provided on the light emitting member to the first and second electrode pads of the printed circuit board.

The method of manufacturing a light emitting module according to an aspect further includes forming a side surface of the light emitting member by underfilling an optically transparent bonder along the side surface of the optical element.

The first reflector includes at least one of a white Rambosian reflector and a metal mirror reflector.

The second reflector includes at least one of a white Rambosian reflector and a metal mirror reflector.

The manufacturing method of the light emitting module according to one aspect further includes welding the side of the quantum dot layer with a transparent material to form an encapsulation part.

The first transparent layer is a transparent layer having a thickness equal to or greater than a preset thickness, and forming the pattern on the transparent substrate includes forming a second transparent layer by forming the pattern on the transparent substrate, the first reflective layer forming the first reflector on the side of the first transparent layer, the side of the dichroic reflective layer so that the first reflective layer surrounds the side of the first transparent layer, the dichroic reflective layer and the quantum dot layer bonded to each other and coating the side surface of the quantum dot layer to form a side reflection part.

The method of manufacturing a light emitting module according to an aspect further includes molding a transparent material along a side surface of the second transparent layer to form a third transparent layer.

A light emitting module according to another aspect may be manufactured by the manufacturing method according to claim 1 .

A light device according to another aspect may include a light emitting module manufactured by the manufacturing method according to claim 1 .

A method of manufacturing a light emitting module according to another aspect includes forming a plurality of patterns on one surface of a transparent substrate through etching, printing a quantum dot material on each of the plurality of patterns to form a plurality of quantum dot layers, and a plurality of quantum dot layers A dichroic reflective layer is formed by coding at least one of a dichroic sheet and a multilayer thin film on the dichroic reflective layer, a transparent thin film is coated on the dichroic reflective layer to form a first transparent layer, and a plurality of first transparent layers are formed on the first transparent layer. While bonding the light emitting member, each of the plurality of light emitting members is bonded at positions corresponding to the respective positions of the plurality of quantum dot layers, and the plurality of semi-finished products are emitted by cutting based on the encapsulation area formed between the plurality of patterns among the areas of the transparent substrate. A module is obtained, a plurality of semi-finished light emitting modules are attached to a temporary substrate at regular intervals, and a transparent material is primarily molded around the light emitting module of a plurality of semi-finished products to surround a second transparent material, molding into a car, removing the temporary substrate, and cutting a plurality of semi-finished light emitting modules to obtain a plurality of finished light emitting modules.

Secondary molding of the first reflector includes the outer surface of the light emitting member, the outer surface of the first transparent layer, and the dichroic reflection layer so as to surround the light emitting member, the first transparent layer, the dichroic reflection layer and the quantum dot layer. and forming the first reflective layer by molding the first reflector on the side surface and the outer surface of the quantum dot layer.

The method of manufacturing a light emitting module according to another aspect further includes forming a second reflection layer by coating a second reflector on the other surface of the transparent substrate.

In the method of manufacturing a light emitting module according to another aspect, the first reflector includes at least one of a white Rambosian reflector and a metallic mirror reflector, and the second reflector includes at least one of a white Rambosian reflector and a metallic mirror reflector.

In a method of manufacturing a light emitting module according to another aspect, the first transparent layer is a transparent layer having a thickness greater than or equal to a preset thickness.

The method of manufacturing a light emitting module according to another aspect further includes connecting the first and second electrodes provided on the light emitting member of the light emitting module of the finished product to the first and second electrode pads of the printed circuit board.

A light emitting module according to another aspect includes a color conversion member that is bonded to the light emitting member and converts light emitted from the light emitting member into light of different wavelengths and emits the light, wherein the color conversion member is disposed on the outer side of the light emitting member a first reflective layer provided on an outer side of the light emitting member except for the first and second electrodes and reflecting light emitted from the light emitting member; a first transparent layer disposed on one surface of the first reflection layer and one surface of the light emitting member, the first transparent layer including a dichroic reflection layer for transmitting blue light among incident light and reflecting green light and red light; a quantum dot layer disposed adjacent to the dichroic reflection layer of the first transparent layer and converting incident light into light having different wavelengths; a second transparent layer disposed on one surface of the quantum dot layer and emitting light emitted from the quantum dot layer to the outside; a second reflection layer disposed on one surface of the second transparent layer and reflecting some of the light emitted from the second transparent layer to the quantum dot layer; and a third transparent layer provided on the side surface of the second transparent layer and surrounding the side surface of the second transparent layer, wherein the first reflective layer includes a side reflection part surrounding the outer surface of the first transparent layer and the outer surface of the quantum dot layer do.

A light device according to another aspect includes the light emitting module according to claim 19 .

According to one aspect, the present invention can minimize the degradation problem of quantum dots (ie, quantum dots) through a patterning process and a coating process of a plurality of transparent materials and a reflective material, and can prevent deterioration of light conversion characteristics. In addition, the present invention can secure the reliability of the quantum dot.

The present invention can mass-produce light emitting modules at low cost through the simplification of the bonding process of the light emitting member and the wafer-level chip scale package (CSP) process of the color conversion member.

According to the present invention, the light emitting module can be miniaturized, and the light device can be manufactured to be ultra-slim through the miniaturization of the light emitting module.

The present invention can ensure high productivity through glass QD (quantum dot) patterning and wafer level process.

1 is an external view of a display device having a light device provided with a light emitting module according to an exemplary embodiment.

2 is an exploded perspective view of a display device having a light device provided with a light emitting module according to an exemplary embodiment.

3 is an exemplary view of a light device provided with a light emitting module according to an embodiment.

4 is an exemplary view of a light emitting module according to an embodiment.

5A to 5G are process flowcharts of a method of manufacturing a light emitting module according to an exemplary embodiment.

6 is an exemplary view of a light emitting module according to another embodiment.

7A to 7H are process flowcharts of a method of manufacturing a light emitting module according to another exemplary embodiment.

8A, 8B and 8C are exemplary views of a light emitting module according to another embodiment.

9A and 9B are diagrams showing color mixing characteristics of the light emitting module according to the present embodiment.

10A, 10B, and 10C are diagrams showing a directivity angle characteristic simulation of a light emitting profile of the light emitting module according to the present embodiment.

11A is a view showing the luminance distribution of the light profile of the light emitting module of the present embodiment.

11B is a view showing the luminance uniformity of the light profile of the light device provided with 12x12 light emitting modules according to the present embodiment.

Like reference numerals refer to like elements throughout. This specification does not describe all elements of the embodiments, and general content in the technical field to which the present invention pertains or content that overlaps between the embodiments is omitted. The term 'part, unit, member, block' used in the specification may be implemented in software or hardware, and according to embodiments, a plurality of 'part, unit, member, block' may be implemented as one component, It is also possible for one 'part, unit, member, block' to include a plurality of components.

Throughout the specification, when a part is "connected" with another part, this includes not only direct connection but also indirect connection, and indirect connection includes connection through a wireless communication network. do.

Also, when a part "includes" a certain component, it means that other components may be further included, rather than excluding other components, unless otherwise stated.

Throughout the specification, when a member is said to be located "on" another member, this includes not only a case in which a member is in contact with another member but also a case in which another member exists between the two members.

Terms such as first, second, etc. are used to distinguish one component from another, and the component is not limited by the above-mentioned terms.

The singular expression includes the plural expression unless the context clearly dictates otherwise.

In each step, the identification code is used for convenience of description, and the identification code does not describe the order of each step, and each step may be performed differently from the specified order unless the specific order is clearly stated in the context. have.

Hereinafter, the working principle and embodiments of the present invention will be described with reference to the accompanying drawings.

The light emitting module may be a light emitting diode package that emits a white light source.

The light emitting module may be provided in a lighting device or a light device of a display device. The light device of the display device may be a backlight device (or also referred to as a backlight unit).

This embodiment describes a light emitting module provided in a backlight device of a display device.

1 is an external view of a display device according to an exemplary embodiment.

The display apparatus 100 is a device capable of processing an image signal received from the outside and visually displaying the processed image.

1 exemplifies a case in which the display apparatus 100 is a television (TV), but is not limited thereto. For example, the display device 100 may be implemented in various forms such as a monitor, a portable multimedia device, a portable communication device, a portable computing device, and the like, and the display device 100 is a device that visually displays an image. is not limited

In addition, the display device 100 may be a large format display (LFD) installed outdoors, such as on the roof of a building or at a bus stop. Here, the outdoors is not necessarily limited to the outdoors, and may be a place where a large number of people can come in and out even if it is indoors, such as a subway station, a shopping mall, a movie theater, a company, or a store.

The display apparatus 100 may receive a video signal and an audio signal from various content sources, and may output video and audio corresponding to the video signal and the audio signal. For example, the display apparatus 100 may receive television broadcast content through a broadcast reception antenna or a wired cable 110a, receive content from a content reproduction device, or receive content from a content providing server of a content provider. .

Referring to FIG. 1 , the display apparatus 100 includes a main body 101 accommodating a plurality of parts for displaying an image, and a screen S provided on one side of the main body 101 to display an image I. can do.

The main body 101 forms the exterior of the display apparatus 100 , and a component for the display apparatus 100 to display the image I may be provided inside the main body 101 . The body 101 shown in FIG. 1 has a flat plate shape, but the shape of the body 101 is not limited to that shown in FIG. 1 . For example, the main body 101 may have a curved shape such that both left and right ends protrude forward and the center is concave.

The screen S is formed on the front surface of the main body 101, and the image I, which is visual information, may be displayed on the screen S. For example, a still image or a moving image may be displayed on the screen S, and a 2D flat image or a 3D stereoscopic image may be displayed.

A plurality of pixels P are formed on the screen S, and an image I displayed on the screen S may be formed by a combination of light emitted from the plurality of pixels P. For example, one image I may be formed on the screen S by combining the light emitted by the plurality of pixels P like a mosaic.

Each of the plurality of pixels P may emit light of various brightnesses and various colors.

In order to emit light of various brightnesses, each of the plurality of pixels P may include a configuration (eg, an organic light emitting diode) capable of emitting light directly, or may pass or block light emitted by a backlight device or the like. It may include a configuration (eg, a liquid crystal panel).

In order to emit light of various colors, each of the plurality of pixels P may include sub-pixels PR, PG, and PB.

The sub-pixels PR, PG, and PB include a red sub-pixel PR capable of emitting red light, a green sub-pixel PG capable of emitting green light, and a blue sub-pixel capable of emitting blue light. It may include a pixel PB. Specifically, red light may be light having a wavelength of approximately 620 nm (nanometer) to 750 nm, green light may be light having a wavelength of approximately 495 nm to 570 nm, and blue light may be light having a wavelength of approximately 450 nm to 495 nm. .

By the combination of the red light of the red sub-pixel PR, the green light of the green sub-pixel PG, and the blue light of the blue sub-pixel PB, each of the plurality of pixels P emits light of various brightnesses and of various colors can do.

The display apparatus 100 may include various types of display panels capable of displaying the image I. For example, the display device 100 may include a Liquid Crystal Display Panel (LCD Panel), a Light Emitting Diode Panel (LED Panel), or an Organic Light Emitting Diode Panel (OLED). panel) may be included.

2 is an exploded perspective view of the display apparatus 100 according to an exemplary embodiment.

In the present exemplary embodiment, the display device 100 including a liquid crystal display panel (LCD Panel) will be described as an example.

As shown in FIG. 2 , various components for generating the image I on the screen S may be provided inside the main body 101 .

The main body 101 includes a light device 200 that emits surface light forward, a liquid crystal panel 110 that blocks or passes light emitted from the light device 200, and a light device 200 and liquid crystal. The control assembly 140 for controlling the operation of the panel 110 and the power assembly 150 for supplying power to the light device 200 and the liquid crystal panel 110 are provided.

In addition, the main body 101 includes a bezel 102 for supporting and fixing the liquid crystal panel 110 , the light device 200 , the control assembly 140 , and the power assembly 150 , the frame middle mold 103 , and the bottom chassis. 104 and a rear cover 105 are further provided.

The light device 200 may include a point light source emitting white light, and may refract, reflect, and scatter light to convert light emitted from the point light source into uniform surface light.

The liquid crystal panel 110 is provided in front of the light device 200 and blocks or passes light emitted from the light device 200 to form the image I.

The front surface of the liquid crystal panel 110 forms a screen S, and may include a plurality of pixels P. The plurality of pixels P included in the liquid crystal panel 110 may each independently block or pass the light of the light device 200 , and the light passed by the plurality of pixels P may pass through the screen S ) can form the image (I) displayed.

The liquid crystal panel 110 may include at least one of a polarizing film, a transparent substrate, a pixel electrode, a thin film transistor (TFT), a liquid crystal layer, a common electrode, and a color filter.

The transparent substrate may be made of tempered glass or transparent resin, and fix the pixel electrode, thin film transistor, liquid crystal layer, common electrode, and color filter. Each of the polarizing films can pass specific light and block other light.

The color filter may include a red filter through which red light passes, a green filter through which green light passes, and a blue filter through which blue light passes, and the region formed by the color filter corresponds to the aforementioned pixel P. .

The thin film transistor may pass or block a current flowing through the pixel electrode, and an electric field may be formed or removed between the pixel electrode and the common electrode according to turning on (closed) or turned off (open) of the thin film transistor. The thin film transistor may be made of poly-silicon, and may be formed by a semiconductor process such as lithography, deposition, or ion implantation.

The pixel electrode and the common electrode are made of a metal material that conducts electricity, and may generate an electric field for changing the arrangement of liquid crystal molecules constituting the liquid crystal layer. The pixel electrode and the common electrode are made of a transparent material, and can pass light incident from the outside. For example, the pixel electrode and the common electrode are indium tin oxide (ITO), indium zinc oxide (IZO), silver nano wire (Ag nano wire), and carbon nano tube (CNT). , graphene, or PEDOT (3,4-ethylenedioxythiophene).

A liquid crystal layer is formed between the pixel electrode and the common electrode, and the liquid crystal layer is filled with liquid crystal molecules.

Liquid crystal represents an intermediate state between a solid (crystal) and a liquid. When heat is applied to a material in a solid state, a general material changes state from a solid state to a transparent liquid state at a melting temperature. In contrast, when heat is applied to a liquid crystal material in a solid state, the liquid crystal material changes to an opaque and turbid liquid at a melting temperature and then to a transparent liquid state. Most of these liquid crystal materials are organic compounds, and their molecular shape is in the shape of a long and thin rod, and the arrangement of molecules is the same as an irregular state in one direction, but may have a regular crystal form in another direction. As a result, the liquid crystal has both the fluidity of a liquid and the optical anisotropy of a crystal (solid).

In addition, the liquid crystal exhibits optical properties according to the change of the electric field. For example, in the liquid crystal, the direction of the molecular arrangement constituting the liquid crystal may change according to the change of the electric field.

When an electric field is generated in the liquid crystal layer, the liquid crystal molecules of the liquid crystal layer are arranged according to the direction of the electric field. When the electric field is not generated in the liquid crystal layer, the liquid crystal molecules may be arranged irregularly or along the alignment layer.

As a result, the optical properties of the liquid crystal layer may vary depending on the presence or absence of an electric field passing through the liquid crystal layer. For example, the disclosed liquid crystal panel includes a TN (Twisted Nematic) liquid crystal panel, VA (Vertical Alignment) liquid crystal panel, and IPS (In- Plane-switching) liquid crystal panels may be included.

As shown in FIG. 2 , on one side of the liquid crystal panel 110 , a cable 110a for transmitting image data to the liquid crystal panel 110 , and a display driver integrated circuit for processing digital image data and outputting an analog image signal (Display Driver Integrated Circuit, DDI) (hereinafter referred to as 'driver IC') may be provided.

The driver integrated circuit (IC) 120 may receive image data and power from the control assembly 140 and the power assembly 150 , and may transmit image data and a driving current to the liquid crystal panel 110 .

The control assembly 140 may control operations of the liquid crystal panel 110 and the light device 200 . The control assembly 140 may process image data received from an external content source, transmit image data to the liquid crystal panel 110 , and transmit dimming data to the light device 200 .

The control assembly 140 may include a memory, a processor, and a control circuit board on which they are mounted.

The power assembly 150 supplies power to the liquid crystal panel 110 and the light device 200 so that the light device 200 outputs surface light and the liquid crystal panel 110 blocks or passes the light of the light device 200 . can

The power assembly 150 may include a capacitor, a coil, a resistor, a processor, and the like, and a circuit board on which they are mounted.

Meanwhile, the display apparatus 100 may include various display panels in addition to the aforementioned liquid crystal panel 110 . That is, it is sufficient if the display device 100 includes the light device 200 described below.

3 is an exemplary diagram of a light device according to an embodiment.

The display device 100 may include a diffuser sheet 160 that uniformly diffuses the light emitted from the light device 200 and an optical sheet 170 that improves the luminance of the light, and includes a light guide plate 180 . It is also possible to include more. Here, the light guide plate 180 may be omitted from the display apparatus 100 .

The optical sheet 170 may include at least one of a diffusion sheet, a prism sheet, and a reflective polarizing sheet. When light is emitted obliquely through the diffusion sheet of the optical sheet, the prism sheet may focus the light by refracting the emitted light again. In addition, the reflective polarizing sheet may transmit light polarized in the same direction as the predetermined polarization direction, or may reflect light polarized in a direction different from the polarization direction.

The display device 100 may include the light device 200 provided at the rear of the liquid crystal panel 110 . Here, the light device is also referred to as a backlight device or a backlight unit.

The light device 200 may be a direct-type backlight unit provided to face the rear surface of the liquid crystal panel 110 , and at least one or two of a plurality of sides of the rear surface of the liquid crystal panel 110 . It may be the edge type backlight device provided above. In this embodiment, a direct backlight device will be described as an example.

3, the light device 200 includes a plurality of light emitting modules 210, a plurality of light emitting modules 210 are electrically and mechanically connected, and a printed circuit board ( 220) may be included.

Each of the plurality of light emitting modules 210 may be arranged in a predetermined pattern so that light is emitted with uniform luminance. The plurality of light emitting modules 210 may be disposed on the printed circuit board 220 at predetermined intervals.

For example, as shown in FIG. 3 , the plurality of light emitting modules 210 may be arranged on the printed circuit board 220 in alignment with rows and columns.

As another example, the plurality of light emitting modules 210 may be arranged on the printed circuit board 220 in alignment with rows and columns, and the plurality of light emitting modules 210 may be disposed to be shifted from each other at a predetermined distance between adjacent columns, or A plurality of light emitting modules 210 may be disposed to be shifted from each other at a predetermined distance between adjacent rows.

In addition, the arrangement of the plurality of light emitting modules 210 is not limited to the arrangement described above, and any arrangement such that light is emitted with uniform luminance is possible.

The printed circuit board 220 may fix the plurality of light emitting modules 210 so that the positions of the plurality of light emitting modules 210 are not changed. In addition, the printed circuit board 220 may supply power for the plurality of light emitting modules 210 to emit light to each light emitting module 210 .

The printed circuit board 220 (Printed Circuit Board, PCB) is made of synthetic resin or tempered glass in which a conductive power supply line for fixing the plurality of light emitting modules 210 and supplying power to the plurality of light emitting modules 210 is formed. can be

4 is an exemplary view of a light emitting module according to an embodiment.

The plurality of light emitting modules 210 may be provided in the same structure as each other. Therefore, only one light emitting module will be described as an example.

The light emitting module 210 may include a light emitting member 210a that emits light, and a color conversion member 210b that converts the light emitted from the light emitting member 210a into white light and emits the converted white light. have.

The light emitting member 210a may include a monochromatic light (light having a wavelength in a specific range or light having a single peak wavelength, for example, blue light) optical element a1 when power is supplied.

The optical device a1 may include a light emitting diode (LED).

The light emitting diode is a compound semiconductor stacked structure having a p-n junction structure, and may include an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer.

The light emitting diode can generate light by using a phenomenon in which electrons and holes are injected into the active layer when a forward electric field is applied to the n-type and p-type semiconductor layers, and the electrons and holes injected into the active layer emit light by recombination.

Light emitting diodes may be largely classified into horizontally structured light emitting diodes and vertically structured light emitting diodes. Horizontal structure light emitting diodes may be classified into top-emitting light emitting diodes and flip-chip light emitting diodes.

The flip-chip type light emitting diode does not use an intermediate medium such as a metal lead (wire) or a ball grid array (BGA) when attaching the light emitting diode, which is a semiconductor element, to the substrate 220, and The electrode pattern may be fused to the printed circuit board 220 as it is.

The flip-chip type light emitting diode may include a mini light emitting diode having a sapphire substrate (size 100 μm or larger) or a micro light emitting diode having a sapphire substrate omitted (size 100-1 μm).

The light emitting member 210a may include first and second electrodes a2 and a3 provided on one side of the optical device a1 and electrically connected to the optical device a1 .

The first and second electrodes a2 and a3 may be provided in the optical element a1 to be spaced apart from each other.

The first and second electrodes a2 and a3 may be provided in a pattern shape. The first electrode a2 may be provided to be connected to the P-type semiconductor layer of the optical device a1 , and the second electrode a3 may be provided to be connected to the N-type semiconductor layer of the optical device a1 .

In addition, the first electrode a2 may be provided to be connected to the N-type semiconductor layer of the optical device a1, and the second electrode a3 may be provided to be connected to the P-type semiconductor layer of the optical device a1. .

When the optical device is a mini light emitting diode, the light emitting member 210a may further include a sapphire substrate a4 provided on the other side of the optical device a1 .

The light emitting member 210a may further include a housing a5 having a cavity for accommodating the optical element a1 and including a wall surface formed by the cavity.

The housing a5 supports and protects the optical element a1. The housing a5 may be made of a transparent material.

The wall surface of the housing a5 may have an inclination angle such that the reflection angle of the light emitted from the optical element a1 is different.

The housing a5 may be formed by an underfill process.

When the optical device a1 is a micro light emitting diode, the sapphire substrate may be omitted from the light emitting member 210a. In this case, the light emitting member 210a may further include a molding material (not shown) provided in the cavity of the housing a5 to protect the optical device a1 and provided to surround the optical device a1 .

The molding material can isolate the optical element a1 from the outside to protect it from external invasion. The molding material may be formed so that the upper portion has a concave shape, a flat shape, or a convex shape.

The molding material may be formed of silicone, epoxy and other resin materials having excellent watertightness, corrosion resistance, and insulation, and may be formed by UV or heat curing.

The light emitting member 210a may include an optical path portion formed by an underfill process without a housing. That is, the light emitting member 210a may include a light path portion inclined along a side parallel to the central axis of the optical element a1 . This optical path portion may be formed by underfilling the optically transparent bonder. Here, the light path portion may correspond to a wall surface of the housing.

The color conversion member 210b includes a first reflection layer 211 , a first transparent layer 212 , a quantum dot layer 213 , a second transparent layer 214 , and a second reflection layer 215 .

The first reflective layer 211 may be provided on a side surface of the light emitting member 210a. The first reflective layer 211 may be provided on the wall surface of the housing a5 of the light emitting member 210a to surround the wall surface of the housing a5 of the light emitting member 210a.

When the light emitted from the optical element a1 of the light emitting member is incident on the bottom or wall surface of the housing a5 , the first reflective layer 211 transmits the light incident on the bottom surface and the wall surface of the housing forward or forward. to be reflected in a direction similar to Here, the front may be a direction toward the first transparent layer 212 , and the bottom surface of the housing a5 may be a surface on which the optical element is disposed.

The first reflective layer 211 allows reflection to be made in an area of the light emitting member except for the first and second electrodes a2 and a3 .

The first reflection layer 211 may include a total reflection mirror reflector.

The mirror reflector may include a metal material having a thermal conductivity equal to or greater than a reference thermal conductivity and a reflectance greater than or equal to the reference reflectance. Here, the metal material may be at least one of aluminum (Al) and silver (Ag).

The reflectance can be increased by using a metallic material, and not only the reflectance but also the scattering rate can be increased by using the mixed material.

The first reflective layer 211 may include a mixed material obtained by mixing a metal material and silicon dioxide (SiO2). For example, the mixed material may be a mixture of aluminum and silicon dioxide, or a mixture of silver (Ag) and silicon dioxide (SiO 2 ).

The temperature reliability of the quantum dots in the color conversion layer may be improved by using the first reflective layer 211 made of a metal material or a mixed material having high thermal conductivity and high reflectivity.

The first reflective layer 211 may include a plurality of layers. For example, the plurality of layers may include a first layer made of a first mixed material and a second layer made of a second mixed material. For example, the first mixed material may be a material in which aluminum and silicon dioxide are mixed, and the second mixed material may be a material in which silver and silicon dioxide are mixed.

The plurality of layers may be three or more layers.

The first transparent layer 212 may be provided adjacent to the first reflective layer and the light emitting member 210a and adjacent to the quantum dot layer 213 . The first transparent layer 212 may be provided on a surface formed by the first reflective layer and the light emitting member 210a.

The first transparent layer 212 may include a glass material, and may include a similar material to the glass material.

The first transparent layer 212 may include a transparent material such as sapphire (Al2O3).

The first transparent layer 212 may function as an encapsulation means for the quantum dot layer 213 . The first transparent layer 212 may prevent deterioration in air of the quantum dot layer 213 .

The color conversion member 210b may further include a dichroic reflective layer 212a provided between the first transparent layer 212 and the quantum dot layer 213 . The dichroic reflective layer 212a may be in the form of a thin film, and there may be one or a plurality of dichroic reflective layers 212a.

The dichroic reflection layer 212a transmits blue light, which is excitation light emitted from the light emitting member, and reflects green light and red light. That is, the dichroic reflective layer 212a may reflect the light emitted toward the first transparent layer 212 from among the light converted and emitted from the quantum dot layer 213 . The dichroic reflective thin film layer 212a may increase light efficiency by reflecting green light and red light back upward. Here, the upper portion may be in a direction toward the quantum dot layer 213 .

The quantum dot layer 213 may be provided between the first transparent layer 212 and the second transparent layer 214 in the form of a thin film.

The quantum dot layer 213 may include an encapsulation portion 213a provided on a surface that does not contact the first transparent layer 212 and the second transparent layer 214 , that is, a side surface thereof. The encapsulation part 213a is to prevent deterioration in air, and may be made of the same material or a similar material as the first and second

transparent layers

212 and 214 .

The encapsulation part 213a may be a glass welding part formed by a welding process.

The quantum dot layer 213 may convert a wavelength of a portion of the incident light. For example, the quantum dot layer 213 may include a quantum dot (QD) material or a fluorescent material. Depending on the constituent material, the quantum dot layer 213 may be referred to as a fluorescent sheet or a quantum dot sheet.

Quantum dots refer to small spherical semiconductor particles of nanometer (nm, 1,000,000,000th of a meter) size, and are composed of a core of approximately 2 nanometers [nm] to 10 [nm] and a shell made of zinc sulfide (ZnS). can be configured. Here, the central body of the quantum dot may include a cadmium (Cd) component or may not include a cadmium (Cd) component. When an electric field is applied, the quantum dot itself emits light of a specific wavelength or high energy light. By absorbing it, it can emit light of a specific wavelength. In this case, the wavelength of the emitted light may depend on the size of the quantum dot. The smaller the size of the quantum dot, the shorter the wavelength of light, and the larger the size, the longer the light. For example, a quantum dot approximately 2 nm in diameter may emit light approximately blue, a quantum dot approximately 3 nm in diameter may emit light approximately green, and a quantum dot approximately 6 nm in diameter may emit light approximately red. can be released

A material in which quantum dots having a diameter of approximately 3 nm and quantum dots having a diameter of approximately 6 nm are mixed can absorb blue light or ultraviolet light and emit green light and/or red light. For example, when blue light or ultraviolet light is incident on the light conversion sheet 141 in which quantum dots having a diameter of approximately 3 nm and quantum dots having a diameter of approximately 6 nm are mixed, some of the blue light or ultraviolet light is converted into green light and/or red light, and the other part is converted to green light and/or red light. can pass through the quantum dot layer. As a result, white light in which blue light, green light, and/or red light are mixed may be emitted from the quantum dot layer.

The fluorescent material may convert blue light to yellow or orange or blue light to red and/or green light.

The quantum dot layer 213 may include a yellow (YAG) phosphor that converts blue light into yellow or orange, or a red/green (RG) phosphor that converts blue light into red and/or green light. For example, the quantum dot layer 213 may include a KSF (K2SiF6) phosphor or a KTF (K2TiF6) phosphor.

The second transparent layer 214 may be provided between the quantum dot layer 213 and the second reflection layer 215 .

The second transparent layer 214 includes wafer-shaped glass and transmits light passing through the quantum dot layer 213 .

The second transparent layer 214 may be a region in which the blue light of the light emitting member and the green light and red light converted in the quantum dot layer are mixed. The second transparent layer 214 may emit mixed light (ie, white light) through each side.

The second reflective layer 215 may include at least one of a white rambosian material (eg, silicon dioxide, etc.) capable of total reflection with respect to white light (ie, blue, green, and red light) and a metal material (eg, aluminum, silver). have.

The second reflective layer 215 may include a plurality of optical thin film layers.

The second reflective layer 215 may further increase the reuse (recycle) of the excitation light and the emission angle.

The second reflective layer 215 may include the same or similar material as the first reflective layer 211 .

As such, the light emitting module of this embodiment mixes the blue light of the light emitting member and the green light and the red light converted in the quantum dot layer in the second transparent layer to generate uniform white light, and also through multiple reflections to make the second transparent light. Since light exits through the side of the layer, the thickness and package size of the quantum dot layer can be minimized.

In addition, the white light emitted from the second transparent layer may have a wider beam angle distribution than a light emission angle distribution (Rambosian) from the light emitting member or the color conversion member. Accordingly, the thickness of the direct backlight device and the number of light source modules can be minimized, and the manufacturing cost of the direct backlight device can be reduced.

The light emitting member and the color conversion member of the light emitting module may be provided in a chip on board (COB) method. The chip-on-board light emitting module 210 may be directly attached to the printed circuit board 220 .

On-chip type light emitting module with high color purity characteristics according to 1/1000 (QD (quantum dot) 2~10nm) level size and narrow full width at half maximum (20~30nm) compared to conventional phosphors (YAG 1~tens of um) It is possible to increase the productivity of the light source module by manufacturing it.

As shown in FIG. 5A , a patterning process of forming a pattern on one surface C1 of both surfaces C1 and C2 of the transparent substrate is performed. In this case, a pattern may be formed on one surface C1 of the transparent substrate through an etching technique. At this time, the second transparent layer 214 on which the pattern is formed may be formed.

Here, the pattern may be one or a plurality of patterns.

When a plurality of patterns are formed on the transparent substrate, the plurality of patterns may be formed at regular intervals.

An area of one surface C1 of the second transparent layer 214 may be divided into a pattern area P1 and an encapsulation area P2 . The pattern region P1 may be a region in which a quantum dot layer is formed, and the encapsulation region P2 may be a region for enclosing a side surface of the quantum dot layer. The encapsulation region P2 may form the encapsulation portion 213a of the quantum dot layer 213 .

The pattern area P1 of the one surface C1 of the second transparent layer 214 forms a recessed shape due to the encapsulation area P2, and the encapsulation area P2 forms a protruding shape due to the pattern area P1. can

That is, the height D1 of the pattern area of the first surface C1 of the second transparent layer and the height D2 of the encapsulation area may be different from each other based on the other surface C2 of the second transparent layer. In this case, the height of the pattern area of the one surface C1 of the second transparent layer may be lower than the height of the encapsulation area based on the other surface C2 of the second transparent layer.

The height of the pattern area and the height of the encapsulation area of one surface of the second transparent layer based on the other surface C2 of the second transparent layer 214 may correspond to the thickness of the pattern area and the encapsulation area of the second transparent layer.

Areas of the side surfaces C3 and C4 of the second transparent layer 214 may be areas in which white light is emitted.

The second transparent layer 214 may be glass in the form of a wafer.

As shown in FIG. 5B , a quantum dot layer 213 is formed by printing a quantum dot material on the pattern area P1 of the second transparent layer 214 . Here, the quantum dot material may be a resin-type material in which quantum dots are evenly distributed.

In addition, it is also possible to form the encapsulation portion 213a by performing laser welding on a side of the quantum dot layer 213 that is not adjacent to the encapsulation region P2 of the second transparent layer 214 .

It is also possible to form the encapsulation portion 213a by coating a transparent material on a side of the quantum dot layer 213 that is not adjacent to the encapsulation region P2 of the second transparent layer 214 . Here, the transparent material may be the same material as the second transparent layer 214 or the same material as the first transparent layer 212 .

As shown in FIG. 5C , one surface of the quantum dot layer 213 and one surface of the second transparent layer constituting the encapsulation region of the second transparent layer 214 are coated with a dichroic sheet or multi-layer thin film to reflect dichroic reflection. A layer 212a is formed. By forming the dichroic reflection layer 212a, light emitted through the lower surface of the quantum dot layer 213 may be reflected. Here, the lower surface of the quantum dot layer 213 may be a surface adjacent to the first transparent layer.

Next, a first transparent layer 212 is formed by bonding a transparent sheet or a thin glass sheet to one surface of the dichroic reflective layer 212a. Here, one surface of the dichroic reflective layer 212a may be a surface not adjacent to the quantum dot layer 213 and may be adjacent to the light emitting member 210a.

In addition, it is possible to form the first transparent layer 212 by coating a transparent sheet or a thin glass sheet on one surface of the dichroic reflective layer 212a.

By bonding the transparent sheet or the thin glass sheet in this way, a protective film for protecting the quantum dot layer and the light emitting member is formed.

Next, the second reflection layer 215 is formed by coating (or molding) the other surface C2 of the second transparent layer 214 by coating (or molding) a white Rambosian reflector, a metal mirror reflector, or a multilayer optical thin film reflector.

The white rambosian reflector may include silicon dioxide (SiO2) as a rambosian material, and the metal mirror reflector may include at least one of aluminum (Al) and silver (Ag) as a metal material.

Here, the order of the formation process of the first transparent layer and the second reflective layer may be changed.

As shown in FIG. 5D , the light emitting member 210a is formed as a first transparent layer by matching the position of the light emitting member 210a with the central position of the pattern region of the second transparent layer (ie, the region on which the quantum dot layer is printed). fixed at (212).

In this case, the light emitting member 210a may be fixed to the first transparent layer 212 through a bonding process.

In addition, after bonding the light emitting member, an inclined optical path may be formed along the side surface of the optical element of the light emitting member. The inclined optical path may be formed of a transparent bonder, and may be formed by an underfill process.

As shown in FIG. 5E , a total reflection mirror reflector is coated on the first transparent layer to which the light emitting member is fixed. At this time, the first reflection layer 211 is formed by coating (molding) a total reflection mirror or a white reflector on the side of the light emitting member 210a, that is, the entire area except for the electrodes a2 and a3, so as to increase the light efficiency through reflection. to form

The total reflection mirror or the white reflector may be coated up to a position corresponding to the position of the optical element a1 of the light emitting member 210a.

A thickness of the first reflective layer may be smaller than a thickness of the light emitting member. This is because the first and second electrodes have a structure protruding from the optical element of the light emitting member.

The total reflection mirror or the white reflector is a reflector for improving the temperature reliability of quantum dots (quantum dots), and may be made of a metal material or a mixed material having high thermal conductivity and high reflectivity. The metal material may be any one of aluminum (Al) and silver (Ag), and the mixed material may be a mixture of aluminum and silicon dioxide (SiO 2 ) or a mixture of silver and silicon dioxide.

The first reflection layer 211 may include a plurality of layers in which a plurality of total reflection mirrors or a white reflector are stacked. In this case, the plurality of layers may be layers in which aluminum and silver are alternately stacked.

The plurality of layers may be layers in which total reflection reflectors made of the first and second mixture materials are alternately stacked.

The color conversion member may be manufactured as a quantum dot chip scale package.

The color conversion member may be referred to as a QD (quantum dot) patterned glass wafer.

As shown in FIG. 5F , cutting is performed based on the encapsulation area P2 of the second transparent layer 214 to secure individual light emitting modules.

As shown in FIG. 5G , the first and

second electrode pads

221 and 222 of the printed circuit board (PCB, 220) by soldering the first and second electrodes of the light emitting module 210 or by using a surface mount technology (SMT) method. electrically and mechanically connected to

As shown in FIG. 4 , the light emitting module may have color mixing inside and a wide-angle diffusion optical path may be generated through multiple reflections (first and second reflection layers and dichroic reflection layers).

In this way, by bonding the light emitting member to the color conversion member having the multiple reflective layers, colors can be uniformly mixed through the multiple reflective layer optical structure, and the orientation angle can be diffused.

Each process in the method of manufacturing a light emitting module may be made by various devices for manufacturing a semiconductor. For example, it may be a lithographic apparatus, a coating apparatus, a molding apparatus, and the like, and a control apparatus for controlling them may be used.

The light emitting module 230 according to another embodiment may be a light emitting module having a thicker first transparent layer 232 than the first transparent layer 212 in the light emitting module 210 according to an embodiment.

The thickness of the first transparent layer 212 in the light emitting module 210 of one embodiment may be less than a preset thickness, and the thickness of the first transparent layer 232 in the light emitting module 230 of another embodiment may be greater than or equal to the preset thickness have.

For example, the preset thickness may be a minimum thickness capable of fully accommodating the light profile of the light emitting member, and may be about 0.01 mm.

In addition, the thickness of the first transparent layer 212 in the light emitting module 210 of one embodiment may be less than 0.01 mm, and the thickness of the first transparent layer 232 in the light emitting module 230 of another embodiment may be 0.1 mm or more. .

The light emitting module 230 may include a light emitting member 230a that emits light, and a color conversion member 230b that converts the light emitted from the light emitting member 230a into white light and emits the converted white light. have.

The light emitting member 230a is the same as the light emitting member 210a according to an exemplary embodiment, and thus a description thereof will be omitted.

The color conversion member 230b includes a first reflective layer 231, a first transparent layer 232, a quantum dot layer 233, a second transparent layer 234, a second reflection layer 235, and a third transparent layer ( 236).

The first reflective layer 231 may be provided on the wall surface of the light emitting member 210a to surround the wall surface of the light emitting member 210a.

The first reflective layer 231 may further include a side reflective part 231a when compared to the first reflective layer 211 according to an exemplary embodiment.

That is, the side reflection part 231a of the first reflection layer 231 is provided on the side surface of the first transparent layer 232 and the side surface of the quantum dot layer 233 to form the first transparent layer 232 and the quantum dot layer 233. It may be provided to cover the dichroic reflective layer 232a, and may be provided to cover the dichroic reflective layer as well.

By wrapping the first reflective layer 231 around the side surface of the first transparent layer 232, multiple light reflection paths are shortened in the first transparent layer 232 thicker than a preset thickness, so that the colored light is non-uniformly mixed. it can be prevented

When the light emitted from the photo element a1 of the light emitting member 230a is incident on the inner bottom surface or wall surface of the light emitting member 230a, the first reflective layer 231 is formed between the bottom surface of the light emitting member 230a and the light emitting member 230a. The light incident on the wall is reflected in the front or near the front. Here, the front may be a direction toward the first transparent layer 232 , and the bottom surface of the light emitting member 230a may be a surface on which the optical device a1 is disposed.

The first reflective layer 231 allows reflection to be made in an area of the light emitting member 230a except for the first and second electrodes a2 and a3 .

The first reflective layer 231 may include a total reflector.

The first reflective layer 231 may include a white reflector.

The total reflection mirror reflector is the same as the total reflection mirror reflector of an embodiment, and thus a description thereof will be omitted.

The reliability of the temperature of the quantum dots in the color conversion layer 233 may be increased by using the first reflective layer 231 made of a metal material or a mixed material having high thermal conductivity and high reflectivity.

The first reflective layer 231 may prevent light leakage of blue light, which is excitation light.

The first transparent layer 232 may be provided inside the first reflective layer 231 and may be provided adjacent to the light emitting member 230a and the quantum dot layer 233 .

The first transparent layer 232 may be provided on the surface formed by the first reflective layer 231 and the light emitting member 230a and may be provided to a position extending from the upper side of the light emitting member 230a by a set distance. That is, the horizontal length of the first transparent layer 232 may be longer than the horizontal length of the light emitting member 230a.

The first transparent layer 232 may include a glass material, and may include a similar material to the glass material.

The first transparent layer 212 prevents deterioration of the quantum dot layer in air.

The color conversion member 230b may further include a dichroic reflective layer 232a provided between the first transparent layer 232 and the quantum dot layer 233 . The dichroic reflective layer 232a may be in the form of a thin film, and there may be one or a plurality of dichroic reflective layers.

The dichroic reflective layer 232a may be a part of the first transparent layer 232 . That is, the first transparent layer 232 may include a dichroic reflective layer 232a.

The dichroic reflective layer 232a may be provided inside the first reflective layer 231 .

The dichroic reflective layer 232a is the same as the dichroic reflective layer 212a according to an exemplary embodiment, and thus a description thereof will be omitted.

The quantum dot layer 233 may be provided between the first transparent layer 232 and the second transparent layer 234 in the form of a thin film.

The quantum dot layer 233 may include a surface that does not contact the first transparent layer 232 and the second transparent layer 234 , that is, an encapsulation portion 233a provided on a side thereof. The encapsulation part 233a is to prevent deterioration in air, and may be made of the same material or a similar material as the first and second

transparent layers

232 and 234 .

The encapsulation part 233a may be a welding part formed by welding a glass plate. Here, the welding may be glass welding or laser welding.

The quantum dot layer 233 may convert a wavelength of a portion of the incident light. For example, the quantum dot layer 233 may include a quantum dot (QD) material or a fluorescent material. The quantum dot layer 233 is the same as the quantum dot layer 213 according to an embodiment, and thus a description thereof will be omitted.

The second transparent layer 234 may be provided between the quantum dot layer 233 and the second reflective layer 235 .

The second transparent layer 234 includes wafer-shaped glass and transmits light passing through the quantum dot layer 233 .

The second transparent layer 234 may be a region in which the blue light of the light emitting member and the green light and red light converted in the quantum dot layer are mixed. The second transparent layer 234 may emit mixed light (ie, white light) through each side.

The second reflective layer 235 may include at least one of a white rambosian material (eg, silicon dioxide, etc.) capable of total reflection with respect to white light (ie, blue, green, and red light) and a metal material (eg, aluminum, silver). have.

The second reflective layer 235 is the same as the second reflective layer according to an exemplary embodiment, and thus a description thereof will be omitted.

The third transparent layer 236 may be provided on an outer surface of the second transparent layer 234 . The third transparent layer 236 may be provided to surround the second transparent layer 234 .

The third transparent layer 236 may include a transparent material (clear mold).

The third transparent layer 236 may form a light extraction aperture structure having a high directivity angle.

Through the double molding process of the first reflective layer and the third transparent layer, colors can be easily mixed according to multi-reflection from the upper, lower, and side portions of the color conversion member, and white light with a high beam angle can be emitted. .

In addition, the white light emitted from the second transparent layer 234 may have a wider beam angle distribution than the emission angle distribution (Rambosian) from the light emitting member 230a or the color conversion member 230b. Accordingly, the thickness of the direct backlight device and the number of light source modules 230 can be minimized, and the manufacturing cost of the direct backlight device can be reduced.

As shown in FIG. 7A , a patterning process of forming a pattern on any one surface C1 of both surfaces C1 and C2 of the second transparent layer 234 is performed. In this case, a pattern may be formed on one surface C1 of the second transparent layer 234 through an etching technique. Here, the pattern may be one or a plurality of patterns.

When a plurality of patterns are formed on the second transparent layer 234 , the plurality of patterns may be formed at regular intervals.

An area of one surface C1 of the second transparent layer 234 may be divided into a pattern area P1 and an encapsulation area P2 . The pattern region P1 may be a region in which a quantum dot layer is formed, and the encapsulation region P2 may be a region for enclosing a side surface of the quantum dot layer. The encapsulation region P2 may form an encapsulation portion 233a of the quantum dot layer 233 .

The pattern area P1 of the one surface C1 of the second transparent layer 234 forms a recessed shape due to the encapsulation area P2, and the encapsulation area P2 forms a protruding shape due to the pattern area P1. can

It is also possible to form the groove P3 in the center of the encapsulation area P2 of the one surface C1 of the second transparent layer 234 using an etching technique.

The groove P3 formed in the center of the encapsulation area of the second transparent layer 234 is for positioning and may be a mark for indicating a position where the first reflective layer is to be coated later.

The groove P3 formed in the center of the encapsulation area of the second transparent layer 234 may function to flatly coded the first reflective layer.

The height D1 of the pattern area of the first surface C1 of the second transparent layer and the height D2 of the encapsulation area may be different from each other based on the other surface C2 of the second transparent layer. In this case, the height of the pattern area of the one surface C1 of the second transparent layer may be lower than the height of the encapsulation area based on the other surface C2 of the second transparent layer.

The height of the pattern area and the height of the encapsulation area of one surface of the second transparent layer based on the other surface C2 of the second transparent layer 234 may correspond to the thickness of the pattern area and the encapsulation area of the second transparent layer.

Areas of the side surfaces C3 and C4 of the second transparent layer 234 may be areas in which white light is emitted.

The second transparent layer 234 may be glass in the form of a wafer.

As shown in FIG. 7B , a quantum dot layer 233 is formed by printing a quantum dot material on the pattern area P1 of the second transparent layer 234 . Here, the quantum dot material may be a resin-type material in which quantum dots are evenly distributed.

In addition, it is also possible to form the quantum dot layer 233 by coating the quantum dot material on the pattern region P1 of the second transparent layer 234 .

Next, the second reflection layer 235 is formed by coating (or molding) the other surface C2 of the second transparent layer 234 with a white Rambosian reflector, a metal mirror reflector, or a multilayer optical thin film reflector.

The rambosian reflector may include silicon dioxide (SiO2) as a rambosian material, and the metal mirror reflector may include at least one of aluminum (Al) and silver (Ag) as a metal material.

As shown in FIG. 7C , one surface of the quantum dot layer 233 and one surface of the second transparent layer 234 constituting the encapsulation area of the second transparent layer 234 are coated with a dichroic sheet or multi-layer thin film deposition. A low reflective layer 232a is formed. By forming the dichroic reflection layer 232a, light emitted through the lower surface of the quantum dot layer 233 may be reflected. Here, the lower surface of the quantum dot layer 233 may be a surface adjacent to the first transparent layer.

In addition, it is possible to form the encapsulation portion 233a by performing laser welding on the side surface of the quantum dot layer 233 .

It is also possible to form the encapsulation portion 233a by coating a transparent material on the side surface of the quantum dot layer 233 . Here, the transparent material may be the same material as the second transparent layer 234 , or may be the same material as the first transparent layer 232 and the transparent material.

The transparent material may be glass.

In addition, a groove is formed in the same area as the groove P3 of the second transparent layer 234 in the area of the dichroic reflection layer 232a, and the side surface of the quantum dot layer 233 and the dichroic reflection layer 232a are formed. It is also possible to form the encapsulation portion 233a by performing laser welding on the side surface.

The quantum dot layer can be encapsulated through glass welding.

It is also possible to form a dichroic reflective layer 232a by bonding a dichroic sheet to one surface of the quantum dot layer 233 .

That is, the dichroic reflective layer may be formed by bonding the dichroic reflective sheet to each of the plurality of printed quantum dot layers 233 . Thereafter, it is also possible to form the encapsulation portion 233a by performing laser welding on the side surface of the quantum dot layer 233 and the side surface of the dichroic reflection layer 232a.

Next, a first transparent layer 232 is formed by bonding a transparent sheet or a thin glass sheet to one surface of the dichroic reflective layer 232a. Here, one surface of the dichroic reflective layer 232a may be a surface not adjacent to the quantum dot layer 233 and may be adjacent to the light emitting member 210a.

In addition, it is possible to form the first transparent layer 232 by coating a transparent sheet or a thin glass sheet on one surface of the dichroic reflective layer 232a.

As shown in FIG. 7D , the light emitting member 230a is formed as the first transparent layer by matching the position of the light emitting member 230a and the central position of the pattern region of the second transparent layer (ie, the region on which the quantum dot layer is printed). fixed at (232).

In this case, the light emitting member 230a may be fixed to the first transparent layer 232 through a bonding technique. Here, the bonding process may be an optical bonding technique.

In addition, before bonding of the light emitting member, an inclined optical path may be formed along the side surface of the optical element of the light emitting member. The inclined optical path may be formed of a transparent bonder, and may be formed by an underfill process.

Next, primary cutting is performed based on the groove P3 of the second transparent layer 234 to secure a semi-finished light emitting module.

As shown in FIG. 7E , a plurality of semi-finished light emitting modules are fixed at a predetermined distance to the temporary substrate T, and the distance between the light emitting modules is narrowed by using the stretching function of the temporary substrate T. A protrusion Ta is formed therebetween. Here, the protrusion Ta of the temporary substrate may be a cutting position during secondary cutting.

In addition, an uncut light emitting module is placed on the temporary substrate T, and a plurality of semi-finished light emitting modules are first cut based on the groove P3 of the second transparent layer 234, and then the temporary substrate T After separating a plurality of semi-finished light emitting modules at a certain distance on the temporary substrate T through the stretching operation of Ta) is formed. As described above, the protrusion Ta may be formed between the light emitting modules of the semi-finished product by adjusting the stretchability of the temporary substrate.

Here, the temporary substrate is an extensible substrate to which a semi-finished light emitting module is attached but detachably attached, and may be a blue tape on which an adhesive material is provided.

That is, the plurality of semi-finished light emitting modules may be detachably attached to the temporary substrate T.

When the uncut light emitting module is disposed on the temporary substrate T, the semi-finished light emitting module may be disposed such that the second reflective layer of the semi-finished light emitting module is in contact with the temporary substrate T.

As shown in FIG. 7f , the third transparent layer using a molding technique from the position of the other surface C2 of the second transparent layer or the position of the second reflection layer 235 to the position of the one surface C1 of the second transparent layer. (236) is formed.

The position of the one surface C1 of the second transparent layer may be a position where the quantum dot layer 233 is bonded. That is, the third transparent layer 236 is formed by a thickness corresponding to the thickness of the second transparent layer 233 .

The third transparent layer 236 includes a transparent material and a clear material.

The mold height of the clear material of the third transparent layer 236 may be lower than the boundary surface of the second transparent layer.

Next, a side surface of the light emitting member, a side surface of the first transparent layer, and a dichroic reflection layer to surround the light emitting member 230a, the first transparent layer 232, the dichroic reflective layer 232a, and the quantum dot layer 233 The first reflection layer 231 is formed by coating a total reflection mirror reflector on the side surface and the side surface of the quantum dot layer using a molding technique.

At this time, the first reflection layer 231 is formed by coating (or molding) a total reflection mirror or a white reflector on the entire area except for the electrodes a2 and a3 of the light emitting member 230a to increase light efficiency through reflection.

The total reflection mirror or the white reflector may be coated (or molded) up to a position corresponding to the position of the optical element a1 of the light emitting member 230a.

The first reflection layer 231 may include a plurality of layers in which a plurality of total reflection mirrors or a white reflector are stacked. In this case, the plurality of layers may be layers in which aluminum and silver are alternately stacked.

The first reflective layer 231 may block light leakage of blue light, which is excitation light.

As such, the color conversion member 230b may be manufactured as a quantum dot chip scale package.

The color conversion member 230b may be referred to as a QD (quantum dot) patterned glass wafer.

As shown in FIG. 7G , after the temporary substrate is removed, cutting is performed based on the position indicated by the protrusion Ta of the temporary substrate to secure the light emitting module of the finished product.

Removing the temporary substrate means removing the temporary substrate.

As shown in FIG. 7H , the first and

second electrode pads

221 and 222 of the printed circuit board (PCB, 220) by soldering the first and second electrodes of the light emitting module 230 or using a surface mount technology (SMT) method. electrically and mechanically connected to

As shown in FIG. 6 , the light emitting module may generate a wide-angle diffuse optical path through color mixing and multiple reflections (first and second reflection layers and dichroic reflection layers).

In this way, by bonding the light emitting member 230a to the color conversion member 230b having the multiple reflective layers, colors can be uniformly mixed through the multiple reflective layer optical structure, and the orientation angle can be diffused.

The light emitting module 240 of another embodiment shown in FIGS. 8A, 8B and 8C is a first transparent layer 242 that is thicker than the first transparent layer 212 in the light emitting module 210 of an embodiment. It may be a light emitting module having

The light emitting module 240 includes a light emitting member 240a that emits light, a color conversion member 240b that converts the light emitted from the light emitting member 240a into white light and emits the converted white light, and an optical dome member (240c) may be included.

The light emitting member 240a is the same as the light emitting member 210a according to an exemplary embodiment, and thus a description thereof will be omitted.

Except for the thickness of the first transparent layer 242 , the color conversion member 240b has the same configuration as the color conversion member 210b according to an exemplary embodiment, and thus a description thereof will be omitted.

The optical dome member 240c may cover the light emitting member 240a and the color conversion member 240b. The optical dome member 240c prevents damage to the light emitting member 240a and the color conversion member 240b by an external mechanical action and/or damage to the light emitting member 240a and the color conversion member 240b by a chemical action. can be prevented or suppressed.

The optical dome member 240c may have, for example, a half sphere shape.

As shown in FIG. 8A , the optical dome member 240c may have, for example, an elliptical half sphere shape.

That is, the vertical cross-section of the optical dome member 240c may be, for example, a bow shape or a semicircular shape.

The optical dome member 240c may be made of silicone or epoxy resin. For example, the molten silicone or epoxy resin is discharged onto the light emitting member 240a and the color conversion member 240b through a nozzle or the like, and then the discharged silicone or epoxy resin is cured to form the optical dome member 240c. can be

Accordingly, the shape of the optical dome member 240c may vary depending on the viscosity of the liquid silicone or epoxy resin.

The optical dome member 240c may be optically transparent or translucent. Light emitted from the light emitting member 240a may pass through the color conversion member 240b and the optical dome member 240c and be emitted to the outside.

The optical dome member 240c illustrated in FIG. 8A may be a lens having an optical dome that is 2.5 times or more higher than the diameter of the optical dome member. The optical dome member 240c may minimize optical path loss for each angle of light emitted from the light emitting member and the color conversion member.

In this case, the optical dome member 240c may refract light like a lens. For example, light emitted from the light emitting member 240a and color-converted by the color conversion member 240b may be refracted by the optical dome member 240c to be dispersed.

As shown in FIG. 8B , the optical dome member 240c may have two convex surfaces. That is, two hemispherical optical domes are combined to form one optical dome member 240c.

As shown in FIG. 8C , the optical dome member 240c has two convex surfaces and may include a reflector 240d provided between the two convex surfaces. In this case, the second reflective layer of the color conversion member may be omitted.

It is also possible that two hemispherical optical domes are combined to form one optical dome member 240c. By molding the reflector in the portion where the two hemispherical optical domes are combined, the two convex surfaces may be connected by the reflector to form a smooth surface.

The optical dome member shown in FIGS. 8B and 8C may be a crater-shaped lens having two circularly symmetrical focal points around a semi-finished light emitting module.

The optical dome member may include a reflector provided in the concave portion formed by the two convex portions to control the intensity of the central region of the optical profile.

Here, the reflector may be the second reflective layer of the color conversion member as shown in FIG. 8B , or the reflector 240d formed in the concave portion as shown in FIG. 8C .

That is, as shown in FIG. 8B , the light emitting module may be provided as a package having a reflector therein and an M-shaped optical dome member.

As shown in FIG. 8C , the light emitting module may be provided as a package having a reflector on the outside and a V-shaped optical dome member.

As shown in FIGS. 8A, 8B, and 8C , the white light emission effect may be increased by forming an optical dome member instead of the side reflection portion of the first reflection layer and the second transparent layer.

8A, 8B, and 8C will be described as an example of the forming process of the optical dome member, after connecting a semi-finished light emitting module to a printed circuit board through a soldering technique, a white Rambosian reflector (SiO2, etc.) ) or a metal material or a mixed material having high thermal conductivity and high reflectance may be used to form the optical dome member by an underfill technique.

The manufacturing process of the semi-finished light emitting module may be the same as the manufacturing process of the light emitting module of an embodiment.

The white rambosian reflector may include silicon dioxide (SiO2), the metal material may include at least one of aluminum (Al) and silver (Ag), and the mixed material may include aluminum and silicon dioxide (SiO2) It may be a material mixed with silver, or a material mixed with silver or silicon dioxide.

8A, 8B, and 8C are described as another example of the forming process of the optical dome member, after connecting the semi-finished light emitting module to the printed circuit board through the soldering technique, a transparent medium in a gel state such as silicon is half The optical dome member can be formed by dispensing in the area around the light emitting module of the product.

9A, 9B, 10A, 10B, 10C, 11A, and 11B are views illustrating an evaluation of a beam angle optical profile and uniformity of a light device according to an operation of a light emitting module.

More specifically, FIG. 9a is a diagram showing a correlation color temperature (CCT) difference of light distribution of a light emitting module, and FIG. 9b is a standard colorimeter of the Commission International on Illumination (CIE). It is a view showing the reference color difference of the light emitting module of this embodiment.

As shown in FIG. 9B , in the case of the light device in which the light emitting module of this embodiment is disposed, the reference color difference (Color Difference) is evaluated as du'v' < 0.01, so that the conventional backlight device (du'v' < 0.05) It can be seen that the contrast color mixing performance is excellent.

More specifically, FIG. 10A is a view showing the simulation of the directivity angle characteristic of the light emitting profile of the light emitting module when the second reflection layer is omitted (that is, there is no reflectance), and FIG. 10B is the reflectance of the second reflection layer It is a view showing the simulation of the directional angle characteristic of the light emitting profile of the light emitting module when it is 80%. to be.

As shown in FIG. 10A , when the second reflection layer is not present, it can be seen that the light emission profile has a lampocian shape and the full width at half maximum of the directional angle distribution is 110 degrees.

Rambosian light can mean the same apparent brightness regardless of the viewing angle of the observer.

As shown in FIG. 10B , when the second reflective layer performs partial reflection (reflectance 80% ), it can be seen that it has a butterfly wing-shaped emission profile and a half width of 150 degrees of the directivity angle distribution.

As shown in FIG. 10C , it can be seen that when the second reflective layer performs total reflection (reflectance of 100%), it has an extreme butterfly wing-shaped emission profile, and the half width of the beam distribution is 170 degrees.

10A, 10B and 10C, it can be seen that the light profile shown in FIGS. 10B and 10C can be implemented in the light device by applying a reflective layer to the Rambosian light profile L3a of FIG. 10A. .

In addition, the light emitting module of the present embodiment can increase the maximum reflectance and transmittance as the incident angle increases with respect to a small incident angle that causes a hot spot of light in the light profile. In addition, with this configuration, a uniform light distribution can be obtained through multi-reflection in the light device.

Accordingly, by using the light emitting module of the present embodiment as the white light source of the light device, illumination uniformity can be secured even through a small number of light source modules.

Because it includes a high angle of view distribution through the total reflection structure through the second reflection layer, the half width of the luminance distribution is 20 mm, which can reduce the number of light emitting modules by half compared to the light device without the second reflection layer, thereby reducing material cost. can

As described above, the disclosed embodiments have been described with reference to the accompanying drawings. Those of ordinary skill in the art to which the present invention pertains will understand that the present invention may be practiced in a form different from the disclosed embodiments without changing the technical spirit or essential features of the present invention. The disclosed embodiments are illustrative and should not be construed as limiting.

Claims

A pattern is formed on one surface of the transparent substrate through etching,

Printing a quantum dot material on the pattern to form a quantum dot layer,

Coding at least one of a dichroic sheet and a multilayer thin film on the quantum dot layer to form a dichroic reflective layer,

A first transparent layer is formed by coating a transparent thin film on the dichroic reflective layer,

bonding the light emitting member to the first transparent layer, but bonding the light emitting member to a position corresponding to the position of the quantum dot layer;

Coating a first reflector on the outer surface of the light emitting member to form a first reflective layer,

and coating a second reflector on the other surface of the transparent substrate to form a second reflective layer.
According to claim 1, wherein the first transparent layer,

Method of manufacturing a light emitting module that is a transparent layer having a thickness less than a preset thickness
The method of claim 1 , wherein forming the first reflective layer comprises:

A method of manufacturing a light emitting module comprising coating the first reflector on an outer surface excluding the first and second electrodes provided on the light emitting member.
4. The method of claim 3,

The method of manufacturing a light emitting module further comprising connecting the first and second electrodes provided on the light emitting member to the first and second electrode pads of the printed circuit board.
According to claim 1,

The method of manufacturing a light emitting module further comprising forming a side surface of the light emitting member by underfilling an optically transparent bonder along the side surface of the optical element.
According to claim 1,

The first reflector is a method of manufacturing a light emitting module comprising at least one of a white Rambosian reflector and a metal mirror reflector.
According to claim 1, The second reflector,

A method of manufacturing a light emitting module comprising at least one of a white Rambosian reflector and a metal mirror reflector.
According to claim 1,

The method of manufacturing a light emitting module further comprising welding a side surface of the quantum dot layer with a transparent material to form an encapsulation part.
According to claim 1,

The first transparent layer is a transparent layer having a thickness greater than or equal to a preset thickness,

Forming the pattern on the transparent substrate includes forming a second transparent layer by forming the pattern on the transparent substrate,

Forming the first reflective layer may include forming the first reflector with the first transparent layer so that the first reflective layer surrounds side surfaces of the first transparent layer, the dichroic reflective layer and the quantum dot layer bonded to each other. The method of manufacturing a light emitting module further comprising forming a side reflection part by coating the side surface of the layer, the side surface of the dichroic reflection layer, and the side surface of the quantum dot layer.
10. The method of claim 9,

The method of manufacturing a light emitting module further comprising molding a transparent material along a side surface of the second transparent layer to form a third transparent layer.
A light emitting module manufactured by the manufacturing method according to claim 1.
A light device comprising a light emitting module manufactured by the manufacturing method according to claim 1 .
A plurality of patterns are formed on one surface of the transparent substrate through etching,

Printing a quantum dot material on each of the plurality of patterns to form a plurality of quantum dot layers,

coding at least one of a dichroic sheet and a multilayer thin film on the plurality of quantum dot layers to form a dichroic reflection layer;

A transparent thin film is coated on the dichroic reflective layer to form a first transparent layer,

bonding a plurality of light emitting members to the first transparent layer, respectively bonding the plurality of light emitting members to positions corresponding to respective positions of the plurality of quantum dot layers,

Obtaining a plurality of semi-finished light emitting modules by cutting based on the encapsulation area formed between the plurality of patterns among the areas of the transparent substrate,

Attaching the plurality of semi-finished light emitting modules to a temporary substrate at regular intervals,

First molding a transparent material around the light emitting module of the plurality of semi-finished products to surround a second transparent material, and secondly molding the first reflector,

removing the temporary substrate;

A method of manufacturing a light emitting module comprising cutting the plurality of semi-finished light emitting modules to obtain a plurality of light emitting modules of finished products.
According to claim 13, wherein the molding of the first reflector of the double molding,

an outer surface of the light emitting member, an outer surface of the first transparent layer, an outer surface of the dichroic reflection layer, and the light emitting member so as to surround the light emitting member, the first transparent layer, the dichroic reflective layer and the quantum dot layer A method of manufacturing a light emitting module comprising molding the first reflector on the outer surface of the quantum dot layer to form a first reflecting layer.
15. The method of claim 14,

The method of manufacturing a light emitting module further comprising forming a second reflective layer by coating a second reflector on the other surface of the transparent substrate.
16. The method of claim 15,

The first reflector includes at least one of a white Rambosian reflector and a metal mirror reflector,

The second reflector is a method of manufacturing a light emitting module including at least one of a white Rambosian reflector and a metal mirror reflector.
The method of claim 13, wherein the first transparent layer,

A method of manufacturing a light emitting module, which is a transparent layer having a thickness greater than or equal to a preset thickness.
14. The method of claim 13,

The method of manufacturing a light emitting module further comprising connecting the first and second electrodes provided on the light emitting member of the light emitting module of the finished product to the first and second electrode pads of the printed circuit board.
a light emitting member provided with first and second electrodes; and

and a color conversion member bonding to the light emitting member and converting the light emitted from the light emitting member into light of different wavelengths and emitting it,

The color conversion member,

a first reflective layer provided on the outer side of the light emitting member and provided on the outer side of the light emitting member except for the first and second electrodes and reflecting the light emitted from the light emitting member;

a first transparent layer disposed on one surface of the first reflection layer and one surface of the light emitting member, the first transparent layer including a dichroic reflection layer for transmitting blue light among incident light and reflecting green light and red light;

a quantum dot layer disposed adjacent to the dichroic reflection layer of the first transparent layer and converting incident light into light having different wavelengths;

a second transparent layer disposed on one surface of the quantum dot layer and emitting light emitted from the quantum dot layer to the outside;

a second reflection layer disposed on one surface of the second transparent layer and reflecting some of the light emitted from the second transparent layer to the quantum dot layer; and

and a third transparent layer provided on a side surface of the second transparent layer and surrounding the side surface of the second transparent layer,

The first reflective layer may include a side reflective part surrounding an outer surface of the first transparent layer and an outer surface of the quantum dot layer.
A light device comprising the light emitting module according to claim 19 .