WO2022186283A1 - Temperature detection device, temperature sensor, temperature detection method, and temperature detection program - Google Patents

Temperature detection device, temperature sensor, temperature detection method, and temperature detection program Download PDF

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WO2022186283A1
WO2022186283A1 PCT/JP2022/008900 JP2022008900W WO2022186283A1 WO 2022186283 A1 WO2022186283 A1 WO 2022186283A1 JP 2022008900 W JP2022008900 W JP 2022008900W WO 2022186283 A1 WO2022186283 A1 WO 2022186283A1
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light
temperature
emitting substance
semiconductor
temperature detection
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PCT/JP2022/008900
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French (fr)
Japanese (ja)
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真一郎 佐藤
真斗 出来
智朗 西村
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国立研究開発法人量子科学技術研究開発機構
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Publication of WO2022186283A1 publication Critical patent/WO2022186283A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/20—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using thermoluminescent materials

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  • the present invention relates to a temperature detection device, a temperature sensor, a temperature detection method, and a temperature detection program that measure temperature using the light of an element that emits light upon receiving excitation energy.
  • the above-described temperature measurement device needs to be equipped with a light source for irradiating the temperature sensor with excitation light, which makes it difficult to reduce the size of the device and increases the manufacturing cost.
  • An object of the present invention is to provide a temperature detection device, a temperature sensor, a temperature detection method, and a temperature detection program that can reduce the size and manufacturing cost of the device in view of the above-described problems.
  • the present invention provides a sensor unit that emits light upon receiving excitation energy and that has a light-emitting substance whose light emission changes with temperature, a light detection unit that detects light from the light-emitting substance, and a sensor based on the detected light.
  • a temperature detection unit for detecting temperature wherein the sensor unit has a structure in which the light-emitting substance is introduced into a semiconductor;
  • a detection device, a temperature sensor, a temperature detection method, and a temperature detection program is a temperature detection program.
  • a temperature detection device it is possible to provide a temperature detection device, a temperature sensor, a temperature detection method, and a temperature detection program that can reduce the size and manufacturing cost of the device.
  • FIG. 2 is a block diagram showing the configuration of a temperature detection device; 4 is a diagram showing the configuration of the temperature sensor of Example 1.
  • FIG. Graph showing the emission spectrum of a certain luminescent material. 4 is a graph showing the relationship between the emission intensity ratio and temperature in a certain luminescent substance. 4 is a flowchart showing temperature detection processing;
  • FIG. 10 is a diagram showing the configuration of a temperature sensor according to the second embodiment;
  • FIG. 10 is a diagram showing the configuration of a temperature sensor according to Example 3;
  • FIG. 10 is a diagram showing the configuration of a temperature sensor of Example 4;
  • FIG. 11 is a diagram showing the configuration of a temperature sensor according to Example 5;
  • FIG. 11 is a block diagram showing the configuration of the temperature detection device of Example 6;
  • Graph showing the emission spectrum of a certain luminescent material is shown in FIG.
  • FIG. 1 is a block diagram showing the configuration of a temperature detection device (temperature measurement device) 1.
  • FIG. FIG. 2 is a diagram showing the configuration of the temperature sensor 2 according to the first embodiment.
  • the temperature detection device 1 has a temperature sensor 2 that emits light, a light receiving section 3 that receives light from the temperature sensor 2, and a light guide path 4.
  • the light guide path 4 is composed of an optical fiber or the like, connects the temperature sensor 2 and the light receiving section 3 and guides the light from the temperature sensor 2 to the light receiving section 3 .
  • the temperature sensor 2 has a voltage application section 21 and a sensor section 22 .
  • the voltage application unit 21 is connected to a power supply such as a commercial power supply or a battery, and applies a predetermined voltage (voltage for temperature detection) to the sensor unit 22 .
  • This predetermined voltage is a voltage at which a current (voltage) necessary for the light-emitting substance 24 to emit light flows (is applied) to the light-emitting substance-added semiconductor 23 .
  • the sensor section 22 includes a luminescent substance-doped semiconductor 23, a luminescent substance 24 doped (introduced) from the surface at a predetermined position in the luminescent substance-doped semiconductor 23, and both ends of the surface of the luminescent substance-doped semiconductor 23. It has a pair of electrodes 25 and 26 provided nearby.
  • the base material of the luminescent substance-added semiconductor 23 is a material (semiconductor material) that does not emit light even when a current flows or does not emit light in a predetermined wavelength band including the emission peak in the emission spectrum of the luminescent substance 24 even if it emits light.
  • Examples of the base material of the light-emitting substance-added semiconductor 23 include gallium nitride, gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, indium phosphide, silicon germanium, silicon, silicon carbide, aluminum nitride, aluminum gallium nitride, zinc oxide, Indium nitride, indium gallium nitride, boron nitride, diamond, and the like can be used.
  • the base material of the light-emitting substance-added semiconductor 23 preferably has a thermal conductivity of 0.25 W/(cm K) (300 K) or more, more preferably 0.5 W/(cm K) (300 K) or more. More preferably, it is 1.8 W/(cm K) (300 K) or more.
  • the thickness of the luminescent material-added semiconductor 23 is preferably as thin as possible within the range where current can flow.
  • the thickness of the light-emitting substance-added semiconductor 23 is 500 nm or less, preferably 50 nm or less, and more preferably 1 nm to 10 nm.
  • the light-emitting substance 24 is composed of an element that emits light using electric current as excitation energy and whose light emission changes depending on temperature. That is, the emission spectrum of the luminescent material 24 changes with temperature.
  • the light-emitting substance 24 is excited (indirectly excited) by the recombination energy of electron-hole pairs and the collision of hot carriers when current flows through the light-emitting substance-added semiconductor 23 and emits light. That is, the light-emitting substance 24 is excited by current injected into the light-emitting substance-doped semiconductor 23 and emits light.
  • the luminescent material 24 is a rare earth element, and is one or more selected from praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, and ytterbium. What has been described for the luminescent material 24 here is the same for the luminescent materials 42, 52, 62, and 72, which will be described later.
  • the sensor unit 22 is configured as a vertical pn junction diode.
  • the light-emitting substance-doped semiconductor 23 is sandwiched between a p-type region (p-type semiconductor) 23a, an n-type region (n-type semiconductor) 23b, and the p-type region 23a and the n-type region 23b, and emits light containing a light-emitting substance 24.
  • a p-type region 23a, a light-emitting substance-containing region 23c, and an n-type region 23b are stacked in this order to form a three-layer structure.
  • the light-emitting substance-containing region 23c can be a depletion layer, but is not limited to this. It may be a containing region 23c.
  • the luminescent substance 24 is introduced into the luminescent substance containing region 23c from one surface where the p-type region 23a, the luminescent substance containing region 23c, and the n-type region 23b can be confirmed in layers. That is, it can be said that the light-emitting substance 24 is introduced between the p-type region 23a and the n-type region 23b in the light-emitting substance-doped semiconductor 23.
  • the light-emitting substance-containing region 23c can be said to be a light-emitting substance-containing semiconductor into which the light-emitting substance 24 is introduced (containing the light-emitting substance 24).
  • an ion implantation method or a vapor phase epitaxy method can be used as a method for producing the luminescent substance-containing semiconductor.
  • an ion implantation method ions of a light-emitting element are uniformly implanted in the vicinity of one surface of the light-emitting substance-added semiconductor 23 (for example, gallium nitride) using an accelerator.
  • the light-emitting substance 24 can be scattered at predetermined intervals inside the vicinity of the surface of the light-emitting substance-doped semiconductor 23 .
  • the light-emitting substance 24 is not activated and does not emit light simply by ion-implanting the semiconductor as the base material. C. to 1650.degree. C. to activate (ionize) the luminescent material 24 and eliminate irradiation defects that cause quenching (quenching) of the luminescent material.
  • C. to 1650.degree. C. to activate (ionize) the luminescent material 24 and eliminate irradiation defects that cause quenching (quenching) of the luminescent material.
  • a technology in which gallium nitride is subjected to high temperature (around 1550 ° C) and high pressure in a nitrogen gas atmosphere is described in Reference 1 (S. Porowski et al., J. Phys: Condens. Matter 14 (2002) 11097-11110).
  • the light-emitting substance 24 is introduced into the light-emitting substance-added semiconductor 23 in an ionized state.
  • the luminescent substance-containing region 23c is the same for luminescent substance-containing regions 41b, 51c, and 61, which will be described later.
  • Each of the pair of electrodes 25 and 26 is electrically connected to the voltage application section 21, and one electrode 25 is provided on the surface of the p-type region 23a (one end face in the stacking direction of the light-emitting substance-added semiconductor 23).
  • the other electrode 26 is provided on the surface of the n-type region 23b (the other end face in the stacking direction of the light-emitting substance-added semiconductor 23). That is, it can be said that the luminescent material 24 is arranged at least partly between the pair of electrodes 25 and 26 arranged on the luminescent material-doped semiconductor 23 .
  • FIG. 3 is an emission spectrum of trivalent praseodymium, which is a graph showing an emission spectrum at 22.5°C and an emission spectrum at 50.7°C.
  • FIG. 4 is a graph showing the relationship between the emission intensity ratio and temperature in trivalent praseodymium.
  • Some of the luminescent substances 24 have two wavelength bands (emission peaks) in which the emission intensity is high in the emission spectrum.
  • trivalent praseodymium and the like have two emission peaks.
  • FIG. 3 shows an emission spectrum at room temperature when praseodymium is ion-implanted into a gallium nitride semiconductor and heat treatment is performed. An emission spectrum was obtained by an imaging spectrometer when irradiated with a laser beam having a resonance excitation wavelength. , the emission spectrum of trivalent praseodymium has a first emission peak (first peak) near 650 nm and a second emission peak (second peak) near 652 nm.
  • the wavelength band of 649 nm or more and less than 651 nm was defined as the first peak
  • the wavelength band of 651 nm or more and less than 653 nm was defined as the second peak.
  • Both the first peak and the second peak have a higher emission intensity when the temperature is low (22.5°C) than when the temperature is high (50.7°C).
  • the first peak and the second peak there is a difference in the amount of change (rate of change) in emission intensity due to temperature change. That is, as shown in FIG. 4, the ratio (emission intensity ratio) between the emission intensity at the first peak (first emission intensity) and the emission intensity at the second peak (second emission intensity) varies depending on the temperature Varies depending on
  • the case where the luminescent substance 24 is praseodymium has been described as an example. It is the same with other rare earth elements that the ratio changes and that the emission intensity ratio decreases as the temperature decreases and the emission intensity ratio increases as the temperature increases.
  • the emission spectrum of neodymium has a first peak near 865 nm and a second peak near 885 nm.
  • the emission spectrum of erbium has a first peak near 525 nm and a second peak near 550 nm.
  • the emission spectrum is obtained in advance by experiment or the like, and by setting the first peak and the second peak, the emission intensity ratio of the two peaks and the temperature It is thought that it is possible to clarify the relationship between
  • the light receiving section 3 has a light detecting section 31 and a control section 32 .
  • the light detection section 31 is for detecting light from the sensor section 22 (light emitted from the light-emitting substance 24), and includes a spectroscopic section 33, a first photodetector 34, and a second photodetector 35. have.
  • the spectroscopic unit 33 splits the light from the sensor unit 22 (light-emitting material 24) into light in a first wavelength band corresponding to the first peak and light in a second wavelength band corresponding to the second peak. It is for spectroscopy.
  • the configuration of the spectroscopic section 33 is not particularly limited, and a beam splitter, a dichroic mirror, or the like may be used, or a combination of an optical element such as a mirror, an etalon filter, and a bandpass filter may be used.
  • a beam splitter, a dichroic mirror, or the like may be used, or a combination of an optical element such as a mirror, an etalon filter, and a bandpass filter may be used.
  • an optical element such as a mirror, an etalon filter, and a bandpass filter
  • the first photodetector 34 and the second photodetector 35 output signals to the control unit 32 according to the intensity of the incident light.
  • the configurations of the first photodetector 34 and the second photodetector 35 are not particularly limited, and photodiodes or the like can be used. Also, the first photodetector 34 and the second photodetector 35 may be composed of single photon detectors capable of detecting single photons.
  • the control unit 32 has a CPU (central processing unit) and a storage unit (memory) that stores various data.
  • This control unit 32 executes at least temperature detection processing. That is, the control unit 32 functions as a temperature detection unit that detects light from the light-emitting material 24 of the sensor unit 22 based on the signal output from the light detection unit 31 and detects (measures) temperature based on the detected light. Function.
  • the control unit 32 may function as a main control unit of the temperature detection device 1. In this case, the control unit 32 transmits a control signal to each part of the temperature detection device 1 such as the voltage application unit 21, It causes the temperature detection device 1 to perform various operations.
  • the temperature detection device 1 configured as described above uses the relationship between the light emission intensity ratio of the two peaks of the light-emitting substance 24 and the temperature to execute temperature detection processing for detecting the temperature at the position where the light-emitting substance 24 is installed. do. In executing the temperature detection process, a temperature detection condition is created in advance based on the relationship between the luminescence intensity ratio of the two peaks of the light-emitting substance 24 to be used and the temperature.
  • FIG. 5 is a flowchart showing temperature detection processing executed by the control unit 32.
  • the voltage application unit 21 is controlled to apply a temperature detection voltage to the sensor unit 22 (electrodes 25 and 26) (step S1).
  • a voltage for temperature detection is applied to the sensor section 22
  • the light-emitting substance 24 emits light
  • the light from the light-emitting substance 24 passes through the light guide 4 and enters the light detection section 31 .
  • the emission spectrum of the light from the light-emitting substance 24 at this time is the emission spectrum of the light-emitting substance 24 at the current temperature.
  • the light incident on the photodetector 31 is incident on the first photodetector 34 and the second photodetector 35 by the spectroscopic unit 33. light in the second wavelength band.
  • the first photodetector 34 outputs a signal corresponding to the first emission intensity, which is the intensity of the light in the first wavelength band. is detected (obtained) (step S2). Further, the second photodetector 35 outputs a signal corresponding to the second emission intensity, which is the intensity of the light in the second wavelength band. (step S3).
  • the emission intensity ratio between the first emission intensity and the second emission intensity is calculated (step S4), and the temperature at the installation position of the light-emitting substance 24 is detected from the emission intensity ratio according to the temperature detection conditions (step S5).
  • the temperature at the installation position of the light-emitting substance 24 is detected by causing the light-emitting substance 24 to emit light without providing a light irradiation unit for irradiating the light-emitting substance 24 with excitation light. be able to. Therefore, the size of the device can be reduced, and the manufacturing cost can be reduced.
  • the present embodiment has the advantage that there are fewer restrictions on the material constituting the sensor section 22 than in the above-described prior art.
  • the temperature is detected according to the emission intensity ratio of the two peaks in the emission spectrum of the luminescent substance used, so the temperature at the installation position of the luminescent substance can be detected simply and accurately.
  • a temperature detection condition indicating the relationship between the luminescence intensity ratio of the two peaks of the light-emitting substance used and the temperature is prepared in advance, and the temperature is detected according to this temperature detection condition.
  • the load on the controller 32 can be reduced, and the controller 32 can be simplified and miniaturized.
  • the ambient temperature of the portion where the sensor section 22 containing the luminescent substance 24 is arranged, or the luminescent substance-added semiconductor of the sensor section 22 is measured.
  • the temperature of an object with which the back surface of 23 is in contact can be measured.
  • the temperature of the object on which the back surface of the luminescent substance-added semiconductor 23 of the sensor section 22 is placed is heat-transferred from the luminescent substance-added semiconductor 23 placed in contact with the luminescent substance 24 . Therefore, the temperature of the object with which the luminescent substance-doped semiconductor 23 is in contact can be measured from the luminescence of the luminescent substance 24 .
  • an ion implantation mask is formed using electron beam drawing, and a predetermined number (for example, 1 ⁇ 10 4 praseodymium) is formed in a predetermined region (for example, 100 nm ⁇ 100 nm). ) is performed, and the region in which the light-emitting substance 24 exists and the current flows in the light-emitting substance-containing region 23c becomes a light-emitting region (light-emitting region). Therefore, it is possible to measure the temperature of the local area where the light-emitting substance 24 exists.
  • the temperature at that one place can be measured. can individually measure the temperature at each position by detecting the light of each light-emitting substance 24 (light-emitting element group).
  • the temperature is measured based on the emission spectrum of the light-emitting substance 24, if the sensor unit 22 is brought into contact with the temperature measurement target, there is no need to bring other objects into contact with the temperature measurement timing. In some cases, the temperature can be measured while preventing a temperature change due to contact with an object other than the sensor section 22 .
  • the base material of the luminescent material-added semiconductor 23 is gallium nitride
  • the luminescent material 24 is praseodymium, particularly trivalent praseodymium. can be done.
  • praseodymium is likely to emit light, so there is an advantage that light can be easily detected by the light receiving section 3 . That is, there is an advantage that the temperature can be easily detected.
  • gallium nitride as the base material of the luminescent substance-added semiconductor 23, it is possible to improve the embedability in electronic devices, particularly semiconductor devices.
  • the sensor section 22 or the temperature sensor 2 can also be configured. In this way, it is possible to locally detect the temperature at an arbitrary position on the electronic device, or to detect the temperature distribution in the electronic device by detecting the temperatures at a plurality of positions on the electronic device. .
  • FIG. 6 is a diagram showing the configuration of the temperature sensor 2 of the second embodiment.
  • the temperature detection device 1 of the second embodiment differs from that of the first embodiment in the configuration of the temperature sensor 2 .
  • the temperature sensor 2 has a sensor section 40 instead of the sensor section 22 .
  • the sensor section 40 is configured as a vertical Schottky barrier diode and has a semiconductor 41, a luminescent material 42, a Schottky electrode 43 and an electrode 44.
  • the semiconductor 41 has a substrate region 41a that functions as a semiconductor substrate in an electronic device or the like, and a luminescent substance containing region (luminescent substance containing semiconductor) 41b that contains a luminescent substance 42.
  • the substrate region 41a and the luminescent substance containing region 41b are separated from each other. It has a two-layer structure in which The luminescent material 42 is introduced into a portion between the Schottky electrode 43 and the electrode 44 in the luminescent material containing region 41b.
  • the Schottky electrode 43 is provided on the surface of the light-emitting substance-containing region 41b and on the surface opposite to the bonding surface with the substrate region 41a (one end face in the stacking direction of the light-emitting substance-added semiconductor 23). It is provided on the surface of the substrate region 41a and on the surface opposite to the bonding surface with the light emitting substance containing region 41b (the other end face in the stacking direction of the light emitting substance added semiconductor 23).
  • FIG. 7 is a diagram showing the configuration of the temperature sensor 2 of the third embodiment.
  • the temperature detection device 1 of Example 3 differs from Example 1 in the configuration of the temperature sensor 2 .
  • the temperature sensor 2 has a sensor section 50 instead of the sensor section 22 .
  • the sensor section 50 is configured as a lateral pn junction diode and has a semiconductor 51, a light emitting material 52, electrodes 53 and 54, and a substrate 55.
  • the semiconductor 51 has a p-type region 51a, an n-type region 51b, and a light emitting substance containing region 51c.
  • the p-type region 51a and the n-type region 51b are arranged so as to be separated from each other, and the light-emitting substance-containing region 51c has at least a portion sandwiched between the p-type region 51a and the n-type region 51b, and contains the light-emitting substance.
  • a light-emitting material 24 is introduced into a portion of the containing region 51c sandwiched between the p-type region 51a and the n-type region 51b.
  • One electrode 53 is provided on the surface of the p-type region 51a, and the other electrode 54 is provided on the surface of the n-type region 51b.
  • the luminescent substance 52 is introduced into a portion between the electrodes 53 and 54 in the luminescent substance containing region 51c.
  • FIG. 8 is a diagram showing the configuration of the temperature sensor 2 of the fourth embodiment.
  • the temperature detection device 1 of Example 4 differs from Example 1 in the configuration of the temperature sensor 2 .
  • the temperature sensor 2 has a sensor section 60 instead of the sensor section 22 .
  • the sensor section 60 is configured as a lateral Schottky barrier diode and has a semiconductor 61 , a light emitting material 62 , a Schottky electrode 63 , an electrode 64 and a substrate 65 .
  • the semiconductor 61 is either a p-type semiconductor or an n-type semiconductor, has a light-emitting substance 62 introduced therein, and functions as a light-emitting substance-containing region.
  • the Schottky electrode 63 and the electrode 64 are arranged so as to be separated from each other.
  • the light-emitting substance 62 is introduced into the portion between the Schottky electrode 63 and the electrode 64 in the semiconductor 61 .
  • FIG. 9 is a diagram showing the configuration of the temperature sensor 2 of the fifth embodiment.
  • the temperature detection device 1 of Example 5 differs from Example 1 in the configuration of the temperature sensor 2 .
  • the temperature sensor 2 has a sensor section 70 instead of the sensor section 22 .
  • the sensor unit 70 is configured as a high mobility field effect transistor (High Electron Mobility Transistor: HEMT), and includes a semiconductor 71, a light emitting material 72, a source electrode 73, a gate electrode 74, a drain electrode 75, and It has a substrate 76 .
  • the semiconductor 71 has a three-layer structure in which an electron supply layer 71a, a two-dimensional electron gas layer 71b, and an electron transit layer (channel layer) 71c are laminated.
  • the luminescent substance 72 exists in the two-dimensional electron gas layer 71b.
  • the source electrode 73, the gate electrode 74, and the drain electrode 75 are arranged so as to be separated from each other. current flows through
  • the luminescent material 72 is introduced into the semiconductor 71 between the source electrode 73 and the gate electrode 74 or between the gate electrode 74 and the drain electrode 75 .
  • FIG. 10 is a block diagram showing the configuration of the temperature detection device 1 of the sixth embodiment.
  • the temperature detection device 1 of the second embodiment differs from that of the first embodiment in the configuration of the light receiving section 3 .
  • the light receiving section 3 has a light detecting section 36 instead of the light detecting section 31 .
  • FIG. 11 is an emission spectrum of neodymium, and is a graph showing an emission spectrum at 10°C and an emission spectrum at 50°C. Some of the light-emitting substances 24 change the wavelength at which the emission peak appears according to the temperature change. Note that FIG. 11 is taken from Reference 2 (B. Del Rosal et al., “In Vivo Luminescence Nanothermometry: from Materials to Applications,” Advanced Optical Materials, 5, 1600508 (2017)).
  • an emission peak appears near 863 nm.
  • the wavelength of the emission peak becomes shorter (shorter wavelength) as the temperature becomes lower, and the wavelength of the emission peak becomes longer (longer wavelength) as the temperature rises. That is, it can be said that there is a relationship between the length of the wavelength at which the emission peak appears and the temperature.
  • the emission spectrum of the light-emitting substance 24 can be detected, and the temperature can be detected according to the length of the wavelength of the emission peak in the emission spectrum.
  • the wavelength at the reference temperature may be set as the reference wavelength, and the temperature may be detected according to the difference from the reference wavelength ( ⁇ shown in FIG. 11).
  • the photodetector 36 only needs to have one photodetector 37 .
  • the present invention is not limited to this embodiment, and can be made into various other embodiments. Also, the specific configurations and the like given in the above-described embodiments are examples, and can be changed as appropriate according to actual products.
  • the present invention provides not only a temperature detection device and a temperature sensor, but also a method, program, and program for detecting light from a light-emitting substance using the temperature sensor and detecting temperature based on the detected light.
  • a storage medium storing
  • This invention can be used in industries that detect temperature using the light of elements that emit light upon receiving excitation energy.

Abstract

The present invention makes it possible to reduce the device size and manufacturing cost. This temperature detection device 1 comprises: a sensor unit 22 having a light-emitting-substance-added semiconductor 23, a pair of electrodes 25, 26 provided on the surface of the light-emitting-substance-added semiconductor 23, and a light-emitting substance 24 disposed at a prescribed position in the light-emitting-substance-added semiconductor 23, the light-emitting substance 24 emitting light due to a current flowing through the light-emitting-substance-added semiconductor 23, the light emission spectrum of the light-emitting substance 24 changing according to the temperature; a voltage application unit 21 for applying a prescribed voltage between the pair of electrodes 25, 26; a light detection unit 31 for detecting light from the light-emitting substance 24; and a control unit 32 functioning as a temperature detection unit for detecting the temperature at the position at which the light-emitting substance 24 is installed, according to the light from the light-emitting substance 24.

Description

温度検出装置、温度センサ、温度検出方法、および温度検出プログラムTemperature detection device, temperature sensor, temperature detection method, and temperature detection program
　この発明は、励起エネルギーを受けて発光する元素の光を利用して温度を測定するような温度検出装置、温度センサ、温度検出方法、および温度検出プログラムに関する。 The present invention relates to a temperature detection device, a temperature sensor, a temperature detection method, and a temperature detection program that measure temperature using the light of an element that emits light upon receiving excitation energy.
　従来、マトリックスとして塩化物を含み、付活剤としてエルビウムイオンまたはツリウムイオンを含む塩化物蛍光体からなる温度センサを用いて、励起光によって温度センサを励起させ、温度センサの励起によって生じた蛍光スペクトルを検出し、検出したスペクトルから温度を演算する温度測定装置が提案されている（特許文献１参照）。 Conventionally, using a temperature sensor composed of a chloride phosphor containing chloride as a matrix and erbium ions or thulium ions as an activator, the temperature sensor is excited by excitation light, and the fluorescence spectrum generated by the excitation of the temperature sensor is There has been proposed a temperature measuring device that detects , and calculates the temperature from the detected spectrum (see Patent Document 1).
　しかしながら、上述の温度測定装置では、温度センサに励起光を照射するための光源等を備える必要があり、装置の小型化が難しく、製造コストの増大を招くという問題がある。 However, the above-described temperature measurement device needs to be equipped with a light source for irradiating the temperature sensor with excitation light, which makes it difficult to reduce the size of the device and increases the manufacturing cost.
特開２００４－０２８６２９号公報Japanese Patent Application Laid-Open No. 2004-028629
　この発明は、上述した問題に鑑み、装置の小型化および製造コストの低減を図ることができる、温度検出装置、温度センサ、温度検出方法、および温度検出プログラムを提供することを目的とする。 An object of the present invention is to provide a temperature detection device, a temperature sensor, a temperature detection method, and a temperature detection program that can reduce the size and manufacturing cost of the device in view of the above-described problems.
　この発明は、励起エネルギーを受けて発光し、かつ、当該発光が温度によって変化する発光物質を有するセンサ部と、前記発光物質からの光を検出する光検出部と、検出した前記光に基づいて温度を検出する温度検出部とを備え、前記センサ部は、前記発光物質が半導体に導入された構成であり、前記発光物質は、前記半導体に電流が注入されることによって励起されて発光する温度検出装置、温度センサ、温度検出方法、および温度検出プログラムであることを特徴とする。 The present invention provides a sensor unit that emits light upon receiving excitation energy and that has a light-emitting substance whose light emission changes with temperature, a light detection unit that detects light from the light-emitting substance, and a sensor based on the detected light. a temperature detection unit for detecting temperature, wherein the sensor unit has a structure in which the light-emitting substance is introduced into a semiconductor; A detection device, a temperature sensor, a temperature detection method, and a temperature detection program.
　この発明により、装置の小型化および製造コストの低減を図ることができる、温度検出装置、温度センサ、温度検出方法、および温度検出プログラムを提供することができる。 According to the present invention, it is possible to provide a temperature detection device, a temperature sensor, a temperature detection method, and a temperature detection program that can reduce the size and manufacturing cost of the device.
温度検出装置の構成を示すブロック図。FIG. 2 is a block diagram showing the configuration of a temperature detection device; 実施例１の温度センサの構成を示す図。4 is a diagram showing the configuration of the temperature sensor of Example 1. FIG. 或る発光物質の発光スペクトルを示すグラフ。Graph showing the emission spectrum of a certain luminescent material. 或る発光物質における発光強度比と温度の関係を示すグラフ。4 is a graph showing the relationship between the emission intensity ratio and temperature in a certain luminescent substance. 温度検出処理を示すフローチャート。4 is a flowchart showing temperature detection processing; 実施例２の温度センサの構成を示す図。FIG. 10 is a diagram showing the configuration of a temperature sensor according to the second embodiment; 実施例３の温度センサの構成を示す図。FIG. 10 is a diagram showing the configuration of a temperature sensor according to Example 3; 実施例４の温度センサの構成を示す図。FIG. 10 is a diagram showing the configuration of a temperature sensor of Example 4; 実施例５の温度センサの構成を示す図。FIG. 11 is a diagram showing the configuration of a temperature sensor according to Example 5; 実施例６の温度検出装置の構成を示すブロック図。FIG. 11 is a block diagram showing the configuration of the temperature detection device of Example 6; 或る発光物質の発光スペクトルを示すグラフ。Graph showing the emission spectrum of a certain luminescent material.
　以下、本発明の一実施形態を図面と共に説明する。 An embodiment of the present invention will be described below with reference to the drawings.
　図１は、温度検出装置（温度測定装置）１の構成を示すブロック図である。図２は、実施例１の温度センサ２の構成を示す図である。 FIG. 1 is a block diagram showing the configuration of a temperature detection device (temperature measurement device) 1. FIG. FIG. 2 is a diagram showing the configuration of the temperature sensor 2 according to the first embodiment.
　温度検出装置１は、発光する温度センサ２と、温度センサ２からの光を受光する受光部３と、導光路４を有している。導光路４は、光ファイバ等によって構成され、温度センサ２および受光部３を接続して温度センサ２からの光を受光部３に導く。 The temperature detection device 1 has a temperature sensor 2 that emits light, a light receiving section 3 that receives light from the temperature sensor 2, and a light guide path 4. The light guide path 4 is composed of an optical fiber or the like, connects the temperature sensor 2 and the light receiving section 3 and guides the light from the temperature sensor 2 to the light receiving section 3 .
　温度センサ２は、電圧印加部２１およびセンサ部２２を有する。電圧印加部２１は、商用電源または電池などの電源に接続されており、センサ部２２に所定の電圧（温度検出用の電圧）を印加する。この所定の電圧は、発光物質２４が発光するために必要な電流（電圧）が発光物質添加半導体２３に流れる（印加される）程度の電圧である。 The temperature sensor 2 has a voltage application section 21 and a sensor section 22 . The voltage application unit 21 is connected to a power supply such as a commercial power supply or a battery, and applies a predetermined voltage (voltage for temperature detection) to the sensor unit 22 . This predetermined voltage is a voltage at which a current (voltage) necessary for the light-emitting substance 24 to emit light flows (is applied) to the light-emitting substance-added semiconductor 23 .
　図２に示すように、センサ部２２は、発光物質添加半導体２３、発光物質添加半導体２３内の所定位置に表面からドープ（導入）される発光物質２４、および発光物質添加半導体２３の表面の両端付近に設けられる一対の電極２５，２６を有する。 As shown in FIG. 2, the sensor section 22 includes a luminescent substance-doped semiconductor 23, a luminescent substance 24 doped (introduced) from the surface at a predetermined position in the luminescent substance-doped semiconductor 23, and both ends of the surface of the luminescent substance-doped semiconductor 23. It has a pair of electrodes 25 and 26 provided nearby.
　発光物質添加半導体２３は、電流が流れても発光しないか、または発光したとしても発光物質２４の発光スペクトルにおける発光ピークを含む所定の波長帯域では発光しない材料（半導体材料）が母材となる。発光物質添加半導体２３の母材としては、窒化ガリウム、ヒ化ガリウム、ヒ化アルミニウムガリウム、ヒ化インジウムガリウム、リン化インジウム、シリコンゲルマニウム、ケイ素、炭化ケイ素、窒化アルミニウム、窒化アルミニウムガリウム、酸化亜鉛、窒化インジウム、窒化インジウムガリウム、窒化ホウ素、ダイヤモンドなどを用いることができる。特に、母材に導入された発光物質２４の発光のしやすさの観点から、窒化ガリウム、窒化アルミニウム、または窒化アルミニウムガリウムを発光物質添加半導体２３の母材として用いることが好ましい。発光物質添加半導体２３の母材は、熱伝導率が０．２５Ｗ／（ｃｍ·Ｋ）　（３００Ｋ）以上であることが好ましく、０．５Ｗ／（ｃｍ·Ｋ）　（３００Ｋ）以上であることがより好ましく、１．８Ｗ／（ｃｍ·Ｋ）　（３００Ｋ）以上であることが好適である。 The base material of the luminescent substance-added semiconductor 23 is a material (semiconductor material) that does not emit light even when a current flows or does not emit light in a predetermined wavelength band including the emission peak in the emission spectrum of the luminescent substance 24 even if it emits light. Examples of the base material of the light-emitting substance-added semiconductor 23 include gallium nitride, gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, indium phosphide, silicon germanium, silicon, silicon carbide, aluminum nitride, aluminum gallium nitride, zinc oxide, Indium nitride, indium gallium nitride, boron nitride, diamond, and the like can be used. In particular, it is preferable to use gallium nitride, aluminum nitride, or aluminum gallium nitride as the base material of the luminescent material-added semiconductor 23 from the viewpoint of ease of light emission of the luminescent material 24 introduced into the base material. The base material of the light-emitting substance-added semiconductor 23 preferably has a thermal conductivity of 0.25 W/(cm K) (300 K) or more, more preferably 0.5 W/(cm K) (300 K) or more. More preferably, it is 1.8 W/(cm K) (300 K) or more.
　発光物質添加半導体２３の厚み（発光物質２４が設けられる表面から裏面までの厚み）は、電流を流すことができる範囲でできるだけ薄いことが好ましい。具体的には、発光物質添加半導体２３の厚みは、５００ｎｍ以下であり、５０ｎｍ以下であることが好ましく、１ｎｍ～１０ｎｍであることがより好ましい。これにより、裏面側の熱を表面側の発光物質２４へ速やかにかつ十分に伝達でき、裏面側の温度を適切に測定することができる。ここで発光物質添加半導体２３について説明したことは、後述する発光物質添加半導体４１，５１，６１，７１も同じである。 The thickness of the luminescent material-added semiconductor 23 (thickness from the front surface to the back surface where the luminescent material 24 is provided) is preferably as thin as possible within the range where current can flow. Specifically, the thickness of the light-emitting substance-added semiconductor 23 is 500 nm or less, preferably 50 nm or less, and more preferably 1 nm to 10 nm. As a result, the heat on the back side can be quickly and sufficiently transferred to the light-emitting material 24 on the front side, and the temperature on the back side can be appropriately measured. What has been described here for the light-emitting substance-added semiconductor 23 is the same for light-emitting substance-added semiconductors 41, 51, 61, and 71, which will be described later.
　発光物質２４は、電流を励起エネルギーとして発光し、かつ、当該発光が温度によって変化する元素により構成されている。すなわち、発光物質２４の発光スペクトルは、温度によって変化する。 The light-emitting substance 24 is composed of an element that emits light using electric current as excitation energy and whose light emission changes depending on temperature. That is, the emission spectrum of the luminescent material 24 changes with temperature.
　本実施例では、発光物質２４は、発光物質添加半導体２３に電流が流れ電子・正孔対の再結合エネルギーやホットキャリアの衝突によって励起（間接励起）され、発光する。すなわち、発光物質２４は、発光物質添加半導体２３に電流が注入されることによって励起されて発光する。 In this embodiment, the light-emitting substance 24 is excited (indirectly excited) by the recombination energy of electron-hole pairs and the collision of hot carriers when current flows through the light-emitting substance-added semiconductor 23 and emits light. That is, the light-emitting substance 24 is excited by current injected into the light-emitting substance-doped semiconductor 23 and emits light.
　たとえば、発光物質２４は、希土類元素であり、プラセオジム、ネオジム、サマリウム、ユウロピウム、ガドリニウム、テルビウム、ジスプロシウム、ホルミウム、エルビウム、ツリウム、イッテルビウムから選択される１種以上である。ここで発光物質２４について説明したことは、後述する発光物質４２，５２，６２，７２も同じである。 For example, the luminescent material 24 is a rare earth element, and is one or more selected from praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, and ytterbium. What has been described for the luminescent material 24 here is the same for the luminescent materials 42, 52, 62, and 72, which will be described later.
　実施例１では、センサ部２２は、縦ｐｎ接合ダイオードとして構成される。発光物質添加半導体２３は、ｐ型領域（ｐ型半導体）２３ａと、ｎ型領域（ｎ型半導体）２３ｂと、ｐ型領域２３ａとｎ型領域２３ｂとに挟まれ、発光物質２４を含有する発光物質含有領域２３ｃとを有し、ｐ型領域２３ａ、発光物質含有領域２３ｃおよびｎ型領域２３ｂが、この順で積層される３層構造となっている。なお、発光物質含有領域２３ｃは、空乏層とすることができるが、これに限らず、ｐ型領域２３ａの空乏層側の所定領域からｎ型領域２３ｂの空乏層側の所定領域までを発光物質含有領域２３ｃとしてもよい。 In Example 1, the sensor unit 22 is configured as a vertical pn junction diode. The light-emitting substance-doped semiconductor 23 is sandwiched between a p-type region (p-type semiconductor) 23a, an n-type region (n-type semiconductor) 23b, and the p-type region 23a and the n-type region 23b, and emits light containing a light-emitting substance 24. A p-type region 23a, a light-emitting substance-containing region 23c, and an n-type region 23b are stacked in this order to form a three-layer structure. Note that the light-emitting substance-containing region 23c can be a depletion layer, but is not limited to this. It may be a containing region 23c.
　発光物質含有領域２３ｃには、ｐ型領域２３ａと発光物質含有領域２３ｃとｎ型領域２３ｂを層状に確認できる１つの表面から発光物質２４が導入されている。すなわち、発光物質２４は、発光物質添加半導体２３中においてｐ型領域２３ａおよびｎ型領域２３ｂの間に導入されているともいえる。また、発光物質含有領域２３ｃは、発光物質２４が導入された（発光物質２４を含有する）発光物質含有半導体ということができる。 The luminescent substance 24 is introduced into the luminescent substance containing region 23c from one surface where the p-type region 23a, the luminescent substance containing region 23c, and the n-type region 23b can be confirmed in layers. That is, it can be said that the light-emitting substance 24 is introduced between the p-type region 23a and the n-type region 23b in the light-emitting substance-doped semiconductor 23. FIG. Also, the light-emitting substance-containing region 23c can be said to be a light-emitting substance-containing semiconductor into which the light-emitting substance 24 is introduced (containing the light-emitting substance 24).
　発光物質含有半導体の作成方法（発光物質添加半導体２３の発光物質含有領域２３ｃへの発光物質２４の導入方法）としては、イオン注入法または気相成長法を用いることができる。イオン注入法の場合、発光物質添加半導体２３（例えば窒化ガリウム）の１つの表面近傍内部に均一に、発光元素のイオン注入を加速器を用いて行う。これにより、発光物質添加半導体２３の表面近傍内側に発光物質２４を所定間隔で点在させることができる。ただし、イオン注入法を用いた場合には、母材となる半導体に発光物質２４をイオン注入しただけでは活性化されておらず発光しない状態であるので、発光物質２４を含む母材全体を５００℃～１６５０℃で熱処理して、発光物質２４を活性化（イオン化）させておくとともに、発光物質のクエンチング（消光）を引き起こす照射欠陥を消滅させる必要がある。なお、このような熱処理による照射欠陥の消滅に関する技術の一例として、窒化ガリウムを窒素ガス雰囲気中で高温（１５５０℃付近）、高圧にする技術が、参考文献１（S. Porowski et al., J. Phys: Condens. Matter 14 (2002) 11097-11110）に開示されているので参照されたい。すなわち、発光物質２４は、イオン化した状態で発光物質添加半導体２３に導入されている。ここで発光物質含有領域２３ｃについて説明したことは、後述する発光物質含有領域４１ｂ，５１ｃ，６１も同じである。 As a method for producing the luminescent substance-containing semiconductor (a method for introducing the luminescent substance 24 into the luminescent substance-containing region 23c of the luminescent substance-added semiconductor 23), an ion implantation method or a vapor phase epitaxy method can be used. In the case of the ion implantation method, ions of a light-emitting element are uniformly implanted in the vicinity of one surface of the light-emitting substance-added semiconductor 23 (for example, gallium nitride) using an accelerator. As a result, the light-emitting substance 24 can be scattered at predetermined intervals inside the vicinity of the surface of the light-emitting substance-doped semiconductor 23 . However, when the ion implantation method is used, the light-emitting substance 24 is not activated and does not emit light simply by ion-implanting the semiconductor as the base material. C. to 1650.degree. C. to activate (ionize) the luminescent material 24 and eliminate irradiation defects that cause quenching (quenching) of the luminescent material. In addition, as an example of technology related to the disappearance of irradiation defects by such heat treatment, a technology in which gallium nitride is subjected to high temperature (around 1550 ° C) and high pressure in a nitrogen gas atmosphere is described in Reference 1 (S. Porowski et al., J. Phys: Condens. Matter 14 (2002) 11097-11110). That is, the light-emitting substance 24 is introduced into the light-emitting substance-added semiconductor 23 in an ionized state. What has been described here for the luminescent substance-containing region 23c is the same for luminescent substance-containing regions 41b, 51c, and 61, which will be described later.
　一対の電極２５，２６のそれぞれは、電圧印加部２１に電気的に接続されており、一方の電極２５は、ｐ型領域２３ａの表面（発光物質添加半導体２３の積層方向の一方端面）に設けられ、他方の電極２６は、ｎ型領域２３ｂの表面（発光物質添加半導体２３の積層方向の他方端面）に設けられる。すなわち、発光物質２４は、発光物質添加半導体２３に配置される一対の電極２５，２６の間の少なくとも一部に配置されているともいえる。 Each of the pair of electrodes 25 and 26 is electrically connected to the voltage application section 21, and one electrode 25 is provided on the surface of the p-type region 23a (one end face in the stacking direction of the light-emitting substance-added semiconductor 23). The other electrode 26 is provided on the surface of the n-type region 23b (the other end face in the stacking direction of the light-emitting substance-added semiconductor 23). That is, it can be said that the luminescent material 24 is arranged at least partly between the pair of electrodes 25 and 26 arranged on the luminescent material-doped semiconductor 23 .
　電圧印加部２１によって一対の電極２５，２６に電圧（順方向バイアス）が印加されると、発光物質添加半導体２３内に電流が流れる（発光物質添加半導体２３に電流が注入される）。このとき、発光物質添加半導体２３における電子・正孔対の再結合エネルギーやホットキャリアの衝突によって発光物質２４が励起され、発光する。 When a voltage (forward bias) is applied to the pair of electrodes 25 and 26 by the voltage application unit 21, current flows in the luminescent material-added semiconductor 23 (current is injected into the luminescent material-added semiconductor 23). At this time, the light-emitting substance 24 is excited by the recombination energy of electron-hole pairs and the collision of hot carriers in the light-emitting substance-doped semiconductor 23 to emit light.
　図３は３価のプラセオジムの発光スペクトルであって、２２．５℃での発光スペクトルと、５０．７℃での発光スペクトルとを示すグラフである。図４は３価のプラセオジムにおける発光強度比と温度の関係を示すグラフである。 FIG. 3 is an emission spectrum of trivalent praseodymium, which is a graph showing an emission spectrum at 22.5°C and an emission spectrum at 50.7°C. FIG. 4 is a graph showing the relationship between the emission intensity ratio and temperature in trivalent praseodymium.
　発光物質２４には、発光スペクトルにおいて発光強度が高くなる波長帯域（発光ピーク）が２つ存在するものがある。たとえば、発光ピークが２つ存在するものとしては、３価のプラセオジムなどがある。図３は窒化ガリウム半導体にプラセオジムをイオン注入し、熱処理を行ったときの室温での発光スペクトルである。共鳴励起波長のレーザー光を照射したときの発光スペクトルをイメージングスペクトロメータで取得した。に示すように、３価のプラセオジムの発光スペクトルでは、６５０ｎｍ付近に第１の発光ピーク（第１のピーク）が存在し、６５２ｎｍ付近に第２の発光ピーク（第２のピーク）が存在する。本実施例では、６４９ｎｍ以上６５１ｎｍ未満の波長帯域（第１の波長帯域）を第１のピークとし、６５１ｎｍ以上６５３ｎｍ未満の波長帯域（第２の波長帯域）を第２のピークとした。 Some of the luminescent substances 24 have two wavelength bands (emission peaks) in which the emission intensity is high in the emission spectrum. For example, trivalent praseodymium and the like have two emission peaks. FIG. 3 shows an emission spectrum at room temperature when praseodymium is ion-implanted into a gallium nitride semiconductor and heat treatment is performed. An emission spectrum was obtained by an imaging spectrometer when irradiated with a laser beam having a resonance excitation wavelength. , the emission spectrum of trivalent praseodymium has a first emission peak (first peak) near 650 nm and a second emission peak (second peak) near 652 nm. In this example, the wavelength band of 649 nm or more and less than 651 nm (first wavelength band) was defined as the first peak, and the wavelength band of 651 nm or more and less than 653 nm (second wavelength band) was defined as the second peak.
　第１のピークおよび第２のピークのいずれも、温度が低い（２２．５℃）場合の方が、温度が高い（５０．７℃）場合よりも発光強度が高くなる。ただし、第１のピークと第２のピークとでは、温度変化による発光強度の変化量（変化率）に差がある。すなわち、図４に示すように、第１のピークにおける発光強度（第１の発光強度）と、第２のピークにおける発光強度（第２の発光強度）との比（発光強度比）は、温度に応じて変化する。 Both the first peak and the second peak have a higher emission intensity when the temperature is low (22.5°C) than when the temperature is high (50.7°C). However, between the first peak and the second peak, there is a difference in the amount of change (rate of change) in emission intensity due to temperature change. That is, as shown in FIG. 4, the ratio (emission intensity ratio) between the emission intensity at the first peak (first emission intensity) and the emission intensity at the second peak (second emission intensity) varies depending on the temperature Varies depending on
　プラセオジムを例に挙げると、図４に示すように、低温になるにつれて発光強度比が小さくなり、高温になるにつれて発光強度比が大きくなる。本実施例では、発光物質２４がプラセオジムである場合を例に挙げて説明したが、発光物質の発光スペクトルが温度によって変化すること、より具体的には、温度に応じて２つのピークの発光強度比が変化すること、および、低温になるにつれて発光強度比が小さくなり、高温になるにつれて発光強度比が大きくなることは、他の希土類元素においても同じである。 Taking praseodymium as an example, as shown in FIG. 4, the lower the temperature, the lower the emission intensity ratio, and the higher the temperature, the higher the emission intensity ratio. In the present embodiment, the case where the luminescent substance 24 is praseodymium has been described as an example. It is the same with other rare earth elements that the ratio changes and that the emission intensity ratio decreases as the temperature decreases and the emission intensity ratio increases as the temperature increases.
　たとえば、図示は省略するが、ネオジムの発光スペクトルでは、８６５ｎｍ付近に第１のピークが存在し、８８５ｎｍ付近に第２のピークが存在する。また、エルビウムの発光スペクトルでは、５２５ｎｍ付近に第１のピークが存在し、５５０ｎｍ付近に第２のピークが存在する。さらに、ネオジムとイッテルビウムを共添加した場合には、９５０ｎｍ付近に第１のピークが存在し、１０５０ｎｍ付近に第２のピークが存在する。なお、ここで例示しない他の希土類元素についても、実験等により予め発光スペクトルを取得しておき、第１のピークと第２のピークを設定することによって、２つのピークの発光強度比と温度との関係を明らかにすることができると考えられる。 For example, although illustration is omitted, the emission spectrum of neodymium has a first peak near 865 nm and a second peak near 885 nm. In addition, the emission spectrum of erbium has a first peak near 525 nm and a second peak near 550 nm. Furthermore, when neodymium and ytterbium are co-doped, there is a first peak near 950 nm and a second peak near 1050 nm. In addition, for other rare earth elements not exemplified here, the emission spectrum is obtained in advance by experiment or the like, and by setting the first peak and the second peak, the emission intensity ratio of the two peaks and the temperature It is thought that it is possible to clarify the relationship between
　図１に戻って、受光部３は、光検出部３１および制御部３２を有する。光検出部３１は、センサ部２２からの光（発光物質２４から発せられた光）を検出するためのものであり、分光部３３、第１光検出器３４、および第２光検出器３５を有する。分光部３３は、センサ部２２（発光物質２４）からの光を、第１のピークに相当する第１の波長帯域の光と、第２のピークに相当する第２の波長帯域の光とに分光するためのものである。分光部３３の構成は特に限定されず、ビームスプリッタまたはダイクロイックミラー等を用いてもよいし、ミラー等の光学素子とエタロンフィルタ、バンドパスフィルタとの組み合わせによって構成してもよい。分光部３３によって分光された光のうち、第１の波長帯域の光は第１光検出器３４に入射され、第２の波長帯域の光は第２光検出器３５に入射される。 Returning to FIG. 1 , the light receiving section 3 has a light detecting section 31 and a control section 32 . The light detection section 31 is for detecting light from the sensor section 22 (light emitted from the light-emitting substance 24), and includes a spectroscopic section 33, a first photodetector 34, and a second photodetector 35. have. The spectroscopic unit 33 splits the light from the sensor unit 22 (light-emitting material 24) into light in a first wavelength band corresponding to the first peak and light in a second wavelength band corresponding to the second peak. It is for spectroscopy. The configuration of the spectroscopic section 33 is not particularly limited, and a beam splitter, a dichroic mirror, or the like may be used, or a combination of an optical element such as a mirror, an etalon filter, and a bandpass filter may be used. Of the light split by the spectroscopic section 33 , light in the first wavelength band enters the first photodetector 34 , and light in the second wavelength band enters the second photodetector 35 .
　第１光検出器３４および第２光検出器３５は、入射された光の強度に応じた信号を制御部３２に出力する。第１光検出器３４および第２光検出器３５の構成は特に限定されず、フォトダイオード等を用いることができる。また、第１光検出器３４および第２光検出器３５を単一光子の検出が可能な単一光子検出器で構成してもよい。 The first photodetector 34 and the second photodetector 35 output signals to the control unit 32 according to the intensity of the incident light. The configurations of the first photodetector 34 and the second photodetector 35 are not particularly limited, and photodiodes or the like can be used. Also, the first photodetector 34 and the second photodetector 35 may be composed of single photon detectors capable of detecting single photons.
　制御部３２は、ＣＰＵ（中央演算処理装置）と各種データを記憶する記憶部（メモリ）とを有している。この制御部３２は、少なくとも温度検出処理を実行する。すなわち、制御部３２は、光検出部３１から出力される信号に基づいてセンサ部２２の発光物質２４からの光を検出し、検出した光に基づいて温度を検出（測定）する温度検出部として機能する。なお、制御部３２は、温度検出装置１の主制御部として機能してもよく、この場合、制御部３２は、電圧印加部２１等の温度検出装置１の各部位に制御信号を送信し、温度検出装置１に種々の動作を実行させる。 The control unit 32 has a CPU (central processing unit) and a storage unit (memory) that stores various data. This control unit 32 executes at least temperature detection processing. That is, the control unit 32 functions as a temperature detection unit that detects light from the light-emitting material 24 of the sensor unit 22 based on the signal output from the light detection unit 31 and detects (measures) temperature based on the detected light. Function. Note that the control unit 32 may function as a main control unit of the temperature detection device 1. In this case, the control unit 32 transmits a control signal to each part of the temperature detection device 1 such as the voltage application unit 21, It causes the temperature detection device 1 to perform various operations.
　以上のように構成された温度検出装置１は、発光物質２４の２つのピークの発光強度比と温度との関係を利用して、発光物質２４の設置位置の温度を検出する温度検出処理を実行する。温度検出処理の実行にあたり、使用する発光物質２４の２つのピークの発光強度比と温度との関係に基づいた温度の検出条件が予め作成されており、この温度の検出条件のデータが制御部３２の記憶部に記憶されている。たとえば、さまざまな温度における２つのピークの発光強度比を実験等によって取得しておき、実験結果に基づいた発光強度比と温度の関係を示す近似式または発光強度比を温度に変換するためのテーブルデータなどを温度の検出条件として作成して制御部３２の記憶部に記憶しておく。 The temperature detection device 1 configured as described above uses the relationship between the light emission intensity ratio of the two peaks of the light-emitting substance 24 and the temperature to execute temperature detection processing for detecting the temperature at the position where the light-emitting substance 24 is installed. do. In executing the temperature detection process, a temperature detection condition is created in advance based on the relationship between the luminescence intensity ratio of the two peaks of the light-emitting substance 24 to be used and the temperature. is stored in the storage unit of For example, the luminous intensity ratio of two peaks at various temperatures is obtained by experiment or the like, and an approximation formula showing the relationship between the luminous intensity ratio and temperature based on the experimental results, or a table for converting the luminous intensity ratio to temperature Data and the like are created as temperature detection conditions and stored in the storage section of the control section 32 .
　図５は、制御部３２で実行される温度検出処理を示すフローチャートである。まず、電圧印加部２１を制御して、センサ部２２（電極２５，２６）に温度検出用の電圧を印加する（ステップＳ１）。センサ部２２に温度検出用の電圧が印加されることによって、発光物質２４が発光し、発光物質２４の光が導光路４を通って光検出部３１に入射される。このときの発光物質２４からの光の発光スペクトルは、発光物質２４の現在温度での発光スペクトルとなる。本実施例では、光検出部３１に入射された光は、分光部３３によって、第１光検出器３４に入射される第１の波長帯域の光と、第２光検出器３５に入射される第２の波長帯域の光とに分光される。 FIG. 5 is a flowchart showing temperature detection processing executed by the control unit 32. FIG. First, the voltage application unit 21 is controlled to apply a temperature detection voltage to the sensor unit 22 (electrodes 25 and 26) (step S1). When a voltage for temperature detection is applied to the sensor section 22 , the light-emitting substance 24 emits light, and the light from the light-emitting substance 24 passes through the light guide 4 and enters the light detection section 31 . The emission spectrum of the light from the light-emitting substance 24 at this time is the emission spectrum of the light-emitting substance 24 at the current temperature. In this embodiment, the light incident on the photodetector 31 is incident on the first photodetector 34 and the second photodetector 35 by the spectroscopic unit 33. light in the second wavelength band.
　そして、第１光検出器３４からは、第１の波長帯域の光の強度である第１の発光強度に応じた信号が出力され、制御部３２は、この信号に応じて第１の発光強度を検出（取得）する（ステップＳ２）。また、第２光検出器３５からは、第２の波長帯域の光の強度である第２の発光強度に応じた信号が出力され、制御部３２は、この信号に応じて第２の発光強度を取得する（ステップＳ３）。 Then, the first photodetector 34 outputs a signal corresponding to the first emission intensity, which is the intensity of the light in the first wavelength band. is detected (obtained) (step S2). Further, the second photodetector 35 outputs a signal corresponding to the second emission intensity, which is the intensity of the light in the second wavelength band. (step S3).
　続いて、第１の発光強度と第２の発光強度との発光強度比を算出し（ステップＳ４）、温度の検出条件に従って、発光強度比から発光物質２４の設置位置の温度を検出する（ステップＳ５）。 Subsequently, the emission intensity ratio between the first emission intensity and the second emission intensity is calculated (step S4), and the temperature at the installation position of the light-emitting substance 24 is detected from the emission intensity ratio according to the temperature detection conditions (step S5).
　このようにして、本実施例では、少なくとも、発光物質２４に励起光を照射するための光照射部を設けなくても、発光物質２４を発光させて発光物質２４の設置位置の温度を検出することができる。したがって、装置の小型化を図ることができるし、さらに、製造コストの低減を図ることもできる。 In this manner, in the present embodiment, the temperature at the installation position of the light-emitting substance 24 is detected by causing the light-emitting substance 24 to emit light without providing a light irradiation unit for irradiating the light-emitting substance 24 with excitation light. be able to. Therefore, the size of the device can be reduced, and the manufacturing cost can be reduced.
　また、従来技術として、炭化ケイ素中のシリコン空孔を磁気センサ等の量子センサとして用いる技術がある。このような従来技術では、適用できる材料が炭化ケイ素のみであり、他の材料には適用できなかった。これに対し、本実施例では、上記の従来技術に比べ、センサ部２２を構成する材料的な制限が少ないという利点がある。 Also, as a conventional technology, there is a technology that uses silicon vacancies in silicon carbide as quantum sensors such as magnetic sensors. In such prior art, the applicable material was only silicon carbide, and other materials could not be applied. On the other hand, the present embodiment has the advantage that there are fewer restrictions on the material constituting the sensor section 22 than in the above-described prior art.
　また、本実施例では、使用する発光物質の発光スペクトルにおける２つのピークの発光強度比に応じて温度を検出するので、簡便かつ正確に発光物質の設置位置の温度を検出することができる。 In addition, in this embodiment, the temperature is detected according to the emission intensity ratio of the two peaks in the emission spectrum of the luminescent substance used, so the temperature at the installation position of the luminescent substance can be detected simply and accurately.
　さらに、本実施例では、使用する発光物質の２つのピークの発光強度比と温度との関係を示す温度の検出条件を予め作成しておき、この温度の検出条件に従って温度を検出するので、温度の検出方法を単純化して制御部３２の負荷を低減し、ひいては制御部３２の単純化および小型化を図ることができる。 Furthermore, in this embodiment, a temperature detection condition indicating the relationship between the luminescence intensity ratio of the two peaks of the light-emitting substance used and the temperature is prepared in advance, and the temperature is detected according to this temperature detection condition. can be simplified, the load on the controller 32 can be reduced, and the controller 32 can be simplified and miniaturized.
　また、発光物質２４の現在温度での発光スペクトルによる温度測定を行うため、発光物質２４を含むセンサ部２２が配置されている部位の周辺温度を測定する、あるいは、センサ部２２の発光物質添加半導体２３の裏面が当接している対象物の温度を測定するといったことができる。たとえば、センサ部２２の発光物質添加半導体２３の裏面が設置された対象物の温度は、当接して設置されている発光物質添加半導体２３から発光物質２４へと熱伝達する。このため、発光物質添加半導体２３が当接している対象物の温度を発光物質２４の発光から測定することができる。 In addition, in order to perform temperature measurement based on the emission spectrum of the luminescent substance 24 at the current temperature, the ambient temperature of the portion where the sensor section 22 containing the luminescent substance 24 is arranged, or the luminescent substance-added semiconductor of the sensor section 22 is measured. For example, the temperature of an object with which the back surface of 23 is in contact can be measured. For example, the temperature of the object on which the back surface of the luminescent substance-added semiconductor 23 of the sensor section 22 is placed is heat-transferred from the luminescent substance-added semiconductor 23 placed in contact with the luminescent substance 24 . Therefore, the temperature of the object with which the luminescent substance-doped semiconductor 23 is in contact can be measured from the luminescence of the luminescent substance 24 .
　また、発光物質２４の発光から温度を測定する構成であるため、電子ビーム描画を使ってイオン注入マスクを形成し、所定領域（例えば１００ｎｍ×１００ｎｍ）に所定個数（例えば１×１０４個のプラセオジム）の発光元素のイオン注入を行い、発光物質含有領域２３ｃのうち、発光物質２４が存在し、かつ、電流が流れる領域が、発光する領域（発光領域）となる。このため、発光物質２４の存在する局所部位の温度測定を行うことができる。したがって、発光物質添加半導体２３の１か所に発光物質２４を設けた場合は、その１か所における温度を測定することができ、発光物質添加半導体２３の複数個所に発光物質２４を設けた場合は、そのそれぞれの発光物質２４（発光元素群）の光を検知することでそれぞれの位置における温度を個別に測定することができる。 In addition, since the temperature is measured from the light emission of the light-emitting substance 24, an ion implantation mask is formed using electron beam drawing, and a predetermined number (for example, 1×10 4 praseodymium) is formed in a predetermined region (for example, 100 nm×100 nm). ) is performed, and the region in which the light-emitting substance 24 exists and the current flows in the light-emitting substance-containing region 23c becomes a light-emitting region (light-emitting region). Therefore, it is possible to measure the temperature of the local area where the light-emitting substance 24 exists. Therefore, when the light-emitting substance 24 is provided at one place on the light-emitting substance-added semiconductor 23, the temperature at that one place can be measured. can individually measure the temperature at each position by detecting the light of each light-emitting substance 24 (light-emitting element group).
　さらに、発光物質２４の発光スペクトルに基づいて温度測定を行うため、温度測定対象にセンサ部２２を当接させておけば、温度測定するタイミングで他のものを接触させる必要がないため、温度測定時においてセンサ部２２以外の物体の接触による温度変化を防止して温度測定することができる。 Furthermore, since the temperature is measured based on the emission spectrum of the light-emitting substance 24, if the sensor unit 22 is brought into contact with the temperature measurement target, there is no need to bring other objects into contact with the temperature measurement timing. In some cases, the temperature can be measured while preventing a temperature change due to contact with an object other than the sensor section 22 .
　なお、発光物質添加半導体２３の種類と発光物質２４の種類との組み合わせについて、好ましくは、発光物質添加半導体２３の母材を窒化ガリウムとし、発光物質２４をプラセオジム、特に３価のプラセオジムとすることができる。この組み合わせであれば、プラセオジムが発光しやすいので、受光部３で光を検出しやすいという利点がある。すなわち、温度を検出しやすいという利点がある。また、発光物質添加半導体２３の母材を窒化ガリウムとすることによって、電子デバイス、特に半導体デバイスへの組み込み性が高くなるし、さらに、窒化ガリウムを含む電子デバイス上に発光物質２４を導入してセンサ部２２または温度センサ２を構成することもできるようになる。このようにすれば、電子デバイス上の任意の位置の温度を局所的に検出したり、電子デバイス上の複数の位置の温度を検出し、当該電子デバイスにおける温度分布を検出したりすることもできる。 Regarding the combination of the type of the luminescent material-added semiconductor 23 and the type of the luminescent material 24, preferably, the base material of the luminescent material-added semiconductor 23 is gallium nitride, and the luminescent material 24 is praseodymium, particularly trivalent praseodymium. can be done. With this combination, praseodymium is likely to emit light, so there is an advantage that light can be easily detected by the light receiving section 3 . That is, there is an advantage that the temperature can be easily detected. In addition, by using gallium nitride as the base material of the luminescent substance-added semiconductor 23, it is possible to improve the embedability in electronic devices, particularly semiconductor devices. The sensor section 22 or the temperature sensor 2 can also be configured. In this way, it is possible to locally detect the temperature at an arbitrary position on the electronic device, or to detect the temperature distribution in the electronic device by detecting the temperatures at a plurality of positions on the electronic device. .
　図６は、実施例２の温度センサ２の構成を示す図である。実施例２の温度検出装置１は、温度センサ２の構成が実施例１と異なる。実施例２では、温度センサ２は、センサ部２２に代えてセンサ部４０を有する。 FIG. 6 is a diagram showing the configuration of the temperature sensor 2 of the second embodiment. The temperature detection device 1 of the second embodiment differs from that of the first embodiment in the configuration of the temperature sensor 2 . In Example 2, the temperature sensor 2 has a sensor section 40 instead of the sensor section 22 .
　図６に示すように、センサ部４０は、縦ショットキーバリアダイオードとして構成され、半導体４１、発光物質４２、ショットキー電極４３、電極４４を有する。半導体４１は、電子デバイス等における半導体基板として機能する基板領域４１ａと、発光物質４２を含有する発光物質含有領域（発光物質含有半導体）４１ｂとを有し、基板領域４１ａと発光物質含有領域４１ｂとが積層される２層構造となっている。なお、発光物質４２は、発光物質含有領域４１ｂ内における、ショットキー電極４３と電極４４の間の部分に導入されている。 As shown in FIG. 6, the sensor section 40 is configured as a vertical Schottky barrier diode and has a semiconductor 41, a luminescent material 42, a Schottky electrode 43 and an electrode 44. The semiconductor 41 has a substrate region 41a that functions as a semiconductor substrate in an electronic device or the like, and a luminescent substance containing region (luminescent substance containing semiconductor) 41b that contains a luminescent substance 42. The substrate region 41a and the luminescent substance containing region 41b are separated from each other. It has a two-layer structure in which The luminescent material 42 is introduced into a portion between the Schottky electrode 43 and the electrode 44 in the luminescent material containing region 41b.
　ショットキー電極４３は、発光物質含有領域４１ｂの表面であって、基板領域４１ａとの接合面の反対側の面（発光物質添加半導体２３の積層方向の一方端面）に設けられ、電極４４は、基板領域４１ａの表面であって、発光物質含有領域４１ｂとの接合面の反対側の面（発光物質添加半導体２３の積層方向の他方端面）に設けられる。 The Schottky electrode 43 is provided on the surface of the light-emitting substance-containing region 41b and on the surface opposite to the bonding surface with the substrate region 41a (one end face in the stacking direction of the light-emitting substance-added semiconductor 23). It is provided on the surface of the substrate region 41a and on the surface opposite to the bonding surface with the light emitting substance containing region 41b (the other end face in the stacking direction of the light emitting substance added semiconductor 23).
　温度検出処理の内容、その他の構成および動作については、実施例１と同一であるため、同一要素に同一符号を付してその詳細な説明を省略する。この実施例２においても、実施例１と同一の作用効果を奏することができる。 Since the content of the temperature detection process and other configurations and operations are the same as those of the first embodiment, the same elements are denoted by the same reference numerals, and detailed description thereof will be omitted. Also in the second embodiment, the same effects as in the first embodiment can be obtained.
　図７は、実施例３の温度センサ２の構成を示す図である。実施例３の温度検出装置１は、温度センサ２の構成が実施例１と異なる。実施例３では、温度センサ２は、センサ部２２に代えてセンサ部５０を有する。 FIG. 7 is a diagram showing the configuration of the temperature sensor 2 of the third embodiment. The temperature detection device 1 of Example 3 differs from Example 1 in the configuration of the temperature sensor 2 . In Example 3, the temperature sensor 2 has a sensor section 50 instead of the sensor section 22 .
　図７に示すように、センサ部５０は、横ｐｎ接合ダイオードとして構成され、半導体５１、発光物質５２、電極５３，５４、および基板５５を有する。半導体５１は、ｐ型領域５１ａと、ｎ型領域５１ｂと、発光物質含有領域５１ｃとを有する。ｐ型領域５１ａと、ｎ型領域５１ｂとは互いに離間するように配置されており、発光物質含有領域５１ｃは、少なくともｐ型領域５１ａとｎ型領域５１ｂとに挟まれる部分を有し、発光物質含有領域５１ｃにおけるｐ型領域５１ａとｎ型領域５１ｂとに挟まれる部分に、発光物質２４が導入されている。一方の電極５３は、ｐ型領域５１ａの表面に設けられ、他方の電極５４は、ｎ型領域５１ｂの表面に設けられる。なお、発光物質５２は、発光物質含有領域５１ｃ内における、電極５３，５４の間の部分に導入されている。 As shown in FIG. 7, the sensor section 50 is configured as a lateral pn junction diode and has a semiconductor 51, a light emitting material 52, electrodes 53 and 54, and a substrate 55. The semiconductor 51 has a p-type region 51a, an n-type region 51b, and a light emitting substance containing region 51c. The p-type region 51a and the n-type region 51b are arranged so as to be separated from each other, and the light-emitting substance-containing region 51c has at least a portion sandwiched between the p-type region 51a and the n-type region 51b, and contains the light-emitting substance. A light-emitting material 24 is introduced into a portion of the containing region 51c sandwiched between the p-type region 51a and the n-type region 51b. One electrode 53 is provided on the surface of the p-type region 51a, and the other electrode 54 is provided on the surface of the n-type region 51b. The luminescent substance 52 is introduced into a portion between the electrodes 53 and 54 in the luminescent substance containing region 51c.
　温度検出処理の内容、その他の構成および動作については、実施例１と同一であるため、同一要素に同一符号を付してその詳細な説明を省略する。この実施例３においても、実施例１と同一の作用効果を奏することができる。 Since the content of the temperature detection process and other configurations and operations are the same as those of the first embodiment, the same elements are denoted by the same reference numerals, and detailed description thereof will be omitted. Also in the third embodiment, the same effects as in the first embodiment can be obtained.
　図８は、実施例４の温度センサ２の構成を示す図である。実施例４の温度検出装置１は、温度センサ２の構成が実施例１と異なる。実施例４では、温度センサ２は、センサ部２２に代えてセンサ部６０を有する。 FIG. 8 is a diagram showing the configuration of the temperature sensor 2 of the fourth embodiment. The temperature detection device 1 of Example 4 differs from Example 1 in the configuration of the temperature sensor 2 . In Example 4, the temperature sensor 2 has a sensor section 60 instead of the sensor section 22 .
　図８に示すように、センサ部６０は、横ショットキーバリアダイオードとして構成され、半導体６１、発光物質６２、ショットキー電極６３、電極６４、および基板６５を有する。半導体６１は、ｐ型半導体またはｎ型半導体のいずれか一方であり、発光物質６２が導入されており、発光物質含有領域として機能する。 As shown in FIG. 8, the sensor section 60 is configured as a lateral Schottky barrier diode and has a semiconductor 61 , a light emitting material 62 , a Schottky electrode 63 , an electrode 64 and a substrate 65 . The semiconductor 61 is either a p-type semiconductor or an n-type semiconductor, has a light-emitting substance 62 introduced therein, and functions as a light-emitting substance-containing region.
　ショットキー電極６３と電極６４とは、互いに離間するように配置されている。なお、発光物質６２は、半導体６１内における、ショットキー電極６３と電極６４との間の部分に導入されている。 The Schottky electrode 63 and the electrode 64 are arranged so as to be separated from each other. The light-emitting substance 62 is introduced into the portion between the Schottky electrode 63 and the electrode 64 in the semiconductor 61 .
　温度検出処理の内容、その他の構成および動作については、実施例１と同一であるため、同一要素に同一符号を付してその詳細な説明を省略する。この実施例４においても、実施例１と同一の作用効果を奏することができる。 Since the content of the temperature detection process and other configurations and operations are the same as those of the first embodiment, the same elements are denoted by the same reference numerals, and detailed description thereof will be omitted. Also in the fourth embodiment, the same effects as in the first embodiment can be obtained.
　図９は、実施例５の温度センサ２の構成を示す図である。実施例５の温度検出装置１は、温度センサ２の構成が実施例１と異なる。実施例５では、温度センサ２は、センサ部２２に代えてセンサ部７０を有する。 FIG. 9 is a diagram showing the configuration of the temperature sensor 2 of the fifth embodiment. The temperature detection device 1 of Example 5 differs from Example 1 in the configuration of the temperature sensor 2 . In Example 5, the temperature sensor 2 has a sensor section 70 instead of the sensor section 22 .
　図９に示すように、センサ部７０は、高移動度電界効果トランジスタ（Ｈｉｇｈ　Ｅｌｅｃｔｒｏｎ　Ｍｏｂｉｌｉｔｙ　Ｔｒａｎｓｉｓｔｏｒ：ＨＥＭＴ）として構成され、半導体７１、発光物質７２、ソース電極７３、ゲート電極７４、ドレイン電極７５、および基板７６を有する。半導体７１は、電子供給層７１ａと、２次元電子ガス層７１ｂと、電子走行層（チャネル層）７１ｃとが積層される３層構造となっている。センサ部７０においては、発光物質７２は、２次元電子ガス層７１ｂに存在している。 As shown in FIG. 9, the sensor unit 70 is configured as a high mobility field effect transistor (High Electron Mobility Transistor: HEMT), and includes a semiconductor 71, a light emitting material 72, a source electrode 73, a gate electrode 74, a drain electrode 75, and It has a substrate 76 . The semiconductor 71 has a three-layer structure in which an electron supply layer 71a, a two-dimensional electron gas layer 71b, and an electron transit layer (channel layer) 71c are laminated. In the sensor section 70, the luminescent substance 72 exists in the two-dimensional electron gas layer 71b.
　ソース電極７３、ゲート電極７４、ドレイン電極７５のそれぞれは、互いに離間するように配置されており、ソース電極７３、ゲート電極７４、ドレイン電極７５に電圧が印加されると、２次元電子ガス層７１ｂに電流が流れる。 The source electrode 73, the gate electrode 74, and the drain electrode 75 are arranged so as to be separated from each other. current flows through
　なお、発光物質７２は、半導体７１内における、ソース電極７３とゲート電極７４の間の部分、またはゲート電極７４とドレイン電極７５の間の部分に導入されている。 The luminescent material 72 is introduced into the semiconductor 71 between the source electrode 73 and the gate electrode 74 or between the gate electrode 74 and the drain electrode 75 .
　温度検出処理の内容、その他の構成および動作については、実施例１と同一であるため、同一要素に同一符号を付してその詳細な説明を省略する。この実施例５においても、実施例１と同一の作用効果を奏することができる。 Since the content of the temperature detection process and other configurations and operations are the same as those of the first embodiment, the same elements are denoted by the same reference numerals, and detailed description thereof will be omitted. Also in this fifth embodiment, the same effect as in the first embodiment can be obtained.
　図１０は、実施例６の温度検出装置１の構成を示すブロック図である。実施例２の温度検出装置１は、受光部３の構成が実施例１と異なる。図１０に示すように、実施例６では、受光部３は、光検出部３１に代えて光検出部３６を有する。 FIG. 10 is a block diagram showing the configuration of the temperature detection device 1 of the sixth embodiment. The temperature detection device 1 of the second embodiment differs from that of the first embodiment in the configuration of the light receiving section 3 . As shown in FIG. 10 , in Example 6, the light receiving section 3 has a light detecting section 36 instead of the light detecting section 31 .
　図１１はネオジムの発光スペクトルであって、１０℃での発光スペクトルと、５０℃での発光スペクトルとを示すグラフである。発光物質２４には、温度変化に応じて発光ピークが表れる波長が変化するものがある。なお、図１１は、参考文献２（B. del Rosal et al., “In Vivo Luminescence Nanothermometry: from Materials to Applications,” Advanced Optical Materials, 5, 1600508 (2017)）から引用したものである。 FIG. 11 is an emission spectrum of neodymium, and is a graph showing an emission spectrum at 10°C and an emission spectrum at 50°C. Some of the light-emitting substances 24 change the wavelength at which the emission peak appears according to the temperature change. Note that FIG. 11 is taken from Reference 2 (B. Del Rosal et al., “In Vivo Luminescence Nanothermometry: from Materials to Applications,” Advanced Optical Materials, 5, 1600508 (2017)).
　図１１に示すように、ネオジムの発光スペクトルでは、発光ピークが８６３ｎｍ付近に現れる。ただし、温度が低くなるにつれて発光ピークの波長が短くなり（短波長化し）、温度が高くなるにつれて発光ピークの波長が長くなる（長波長化する）傾向にある。すなわち、発光ピークが表れる波長の長短と、温度とは関係があるといえる。この発光ピークが表れる波長の長短と、温度との関係を利用して、発光物質２４の発光スペクトルを検出し、その発光スペクトルにおける発光ピークの波長の長短に応じて、温度を検出することができる。この場合、基準となる温度における波長を基準波長として設定しておき、基準波長に対する差（図１１に示すΔλ）に応じて温度を検出するようにしてもよい。 As shown in FIG. 11, in the emission spectrum of neodymium, an emission peak appears near 863 nm. However, there is a tendency that the wavelength of the emission peak becomes shorter (shorter wavelength) as the temperature becomes lower, and the wavelength of the emission peak becomes longer (longer wavelength) as the temperature rises. That is, it can be said that there is a relationship between the length of the wavelength at which the emission peak appears and the temperature. Using the relationship between the length of the wavelength at which the emission peak appears and the temperature, the emission spectrum of the light-emitting substance 24 can be detected, and the temperature can be detected according to the length of the wavelength of the emission peak in the emission spectrum. . In this case, the wavelength at the reference temperature may be set as the reference wavelength, and the temperature may be detected according to the difference from the reference wavelength (Δλ shown in FIG. 11).
　このように、発光ピークが表れる波長の長短と、温度との関係を利用する場合には、発光ピークが検出できればよく、発光物質２４からの光を分光する必要が無い。したがって、光検出部３６は、１つの光検出部３７を有するだけでよい。 In this way, when utilizing the relationship between the length of the wavelength at which the emission peak appears and the temperature, it is sufficient if the emission peak can be detected, and there is no need to disperse the light from the light-emitting substance 24 . Therefore, the photodetector 36 only needs to have one photodetector 37 .
　その他の構成および動作については、実施例１と同一であるため、同一要素に同一符号を付してその詳細な説明を省略する。この実施例６においても、実施例１と同一の作用効果を奏することができる。また、光検出部３６に分光部を設ける必要がなく、光検出部も１つ設けるだけでよいので、装置の小型化を図ることができるし、製造コストの低減を図ることもできる。 Since other configurations and operations are the same as those of the first embodiment, the same elements are denoted by the same reference numerals, and detailed description thereof will be omitted. Also in the sixth embodiment, the same effects as in the first embodiment can be obtained. Moreover, since it is not necessary to provide a spectroscopic section in the photodetector 36, and only one photodetector may be provided, the size of the device can be reduced, and the manufacturing cost can be reduced.
　この発明は本実施形態に限られず他の様々な実施形態とすることができる。また、上述の実施形態で挙げた具体的な構成等は一例であり、実際の製品に応じて適宜変更することが可能である。 The present invention is not limited to this embodiment, and can be made into various other embodiments. Also, the specific configurations and the like given in the above-described embodiments are examples, and can be changed as appropriate according to actual products.
　また、本発明は、温度検出装置および温度センサとして提供するだけでなく、温度センサを用いて、発光物質からの光を検出し、検出した光に基づいて温度を検出する方法、プログラム、およびプログラムを記憶した記憶媒体としても提供することができる。 Further, the present invention provides not only a temperature detection device and a temperature sensor, but also a method, program, and program for detecting light from a light-emitting substance using the temperature sensor and detecting temperature based on the detected light. can also be provided as a storage medium storing
　この発明は、励起エネルギーを受けて発光する元素の光を利用して温度を検出するような産業に利用することができる。 This invention can be used in industries that detect temperature using the light of elements that emit light upon receiving excitation energy.
１…温度検出装置
２…温度センサ
３…受光部
２１…電圧印加部
２２，４０，６０，７２…センサ部
２３…発光物質添加半導体
２４，５２，６２，７２…発光物質
２５，２６，４４，５３，５４，６４…電極
３１，３６…光検出部
３２…制御部（温度検出部）
４１，６１，７１…半導体
４３，６３…ショットキー電極
７３…ソース電極
７４…ゲート電極
７５…ドレイン電極
  DESCRIPTION OF SYMBOLS 1... Temperature detection device 2... Temperature sensor 3... Light receiving part 21... Voltage application part 22, 40, 60, 72... Sensor part 23... Luminous substance added semiconductors 24, 52, 62, 72... Luminous substances 25, 26, 44, 53, 54, 64... electrodes 31, 36... photodetector 32... controller (temperature detector)
41, 61, 71 semiconductors 43, 63 Schottky electrode 73 source electrode 74 gate electrode 75 drain electrode

Claims (6)

  1. 　励起エネルギーを受けて発光し、かつ、当該発光が温度によって変化する発光物質を有するセンサ部と、
    前記発光物質からの光を検出する光検出部と、
    検出した前記光に基づいて温度を検出する温度検出部とを備え、
    前記センサ部は、前記発光物質が半導体に導入された構成であり、
    前記発光物質は、前記半導体に電流が注入されることによって励起されて発光する
    温度検出装置。     a sensor unit having a light-emitting substance that emits light upon receiving excitation energy and whose light emission changes depending on temperature;
    a photodetector that detects light from the luminescent material;
    A temperature detection unit that detects temperature based on the detected light,
    The sensor unit has a structure in which the light-emitting substance is introduced into a semiconductor,
    The temperature detection device, wherein the light-emitting substance is excited by current injected into the semiconductor and emits light.
  2. 　前記発光物質は、前記半導体に配置される一対の電極の間の少なくとも一部に配置されている
    請求項１記載の温度検出装置。     2. The temperature detecting device according to claim 1, wherein said light emitting material is arranged at least partly between a pair of electrodes arranged on said semiconductor.
  3. 　前記発光物質は、希土類元素である
    請求項１または２記載の温度検出装置。     3. The temperature detection device according to claim 1, wherein said light-emitting substance is a rare earth element.
  4. 　励起エネルギーを受けて発光し、かつ、当該発光が温度によって変化する発光物質を有するセンサ部を備え、
    前記センサ部は、前記発光物質が半導体に導入された構成であり、
    前記発光物質は、前記半導体に電流が注入されることによって励起されて発光する
    温度センサ。     A sensor unit that emits light upon receiving excitation energy and has a light-emitting substance whose light emission changes depending on temperature;
    The sensor unit has a structure in which the light-emitting substance is introduced into a semiconductor,
    The temperature sensor, wherein the light-emitting substance is excited to emit light when a current is injected into the semiconductor.
  5. 　励起エネルギーを受けて発光し、かつ、当該発光が温度によって変化する発光物質を有するセンサ部を備え、前記センサ部は、前記発光物質が半導体に導入された構成であり、前記発光物質は、前記半導体に電流が注入されることによって励起されて発光する温度センサを用い、
    前記発光物質からの光を検出し、
    検出した前記光に基づいて温度を検出する
    温度検出方法。     A sensor unit that emits light upon receiving excitation energy and that includes a light-emitting substance whose light emission changes with temperature, the sensor unit has a structure in which the light-emitting substance is introduced into a semiconductor, and the light-emitting substance Using a temperature sensor that emits light when excited by current injection into the semiconductor,
    detecting light from the luminescent material;
    A temperature detection method for detecting temperature based on the detected light.
  6. 　励起エネルギーを受けて発光し、かつ、当該発光が温度によって変化する発光物質を有するセンサ部を備え、前記センサ部は、前記発光物質が半導体に導入された構成であり、前記発光物質は、前記半導体に電流が注入されることによって励起されて発光する温度センサを備える温度検出装置のコンピュータを、
    前記発光物質からの光を検出する光検出部と、
    検出した前記光に基づいて温度を検出する温度検出部として機能させる
    温度検出プログラム。     A sensor unit that emits light upon receiving excitation energy and that includes a light-emitting substance whose light emission changes with temperature, the sensor unit has a structure in which the light-emitting substance is introduced into a semiconductor, and the light-emitting substance A computer of a temperature detection device equipped with a temperature sensor that emits light when excited by injecting a current into a semiconductor,
    a photodetector that detects light from the luminescent material;
    A temperature detection program that functions as a temperature detection unit that detects temperature based on the detected light.
PCT/JP2022/008900 2021-03-02 2022-03-02 Temperature detection device, temperature sensor, temperature detection method, and temperature detection program WO2022186283A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072540U (en) * 1983-10-24 1985-05-22 横河電機株式会社 light thermometer
JP2004103931A (en) * 2002-09-11 2004-04-02 Japan Science & Technology Corp Rare earth element added semiconductor laminate structure for light emitting element, light emitting diode using the same, semiconductor laser diode, and semiconductor optical amplifier using the same, and manufacturing method
JP2008517265A (en) * 2004-10-15 2008-05-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Thermometer to switch colors
US20180122872A1 (en) * 2015-03-27 2018-05-03 Lg Display Co., Ltd. Temperature sensor, method for manufacturing temperature sensor, and display device to which temperature sensor is applied

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072540U (en) * 1983-10-24 1985-05-22 横河電機株式会社 light thermometer
JP2004103931A (en) * 2002-09-11 2004-04-02 Japan Science & Technology Corp Rare earth element added semiconductor laminate structure for light emitting element, light emitting diode using the same, semiconductor laser diode, and semiconductor optical amplifier using the same, and manufacturing method
JP2008517265A (en) * 2004-10-15 2008-05-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Thermometer to switch colors
US20180122872A1 (en) * 2015-03-27 2018-05-03 Lg Display Co., Ltd. Temperature sensor, method for manufacturing temperature sensor, and display device to which temperature sensor is applied

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