WO2022171103A1 - Transfer device, transfer method, and display apparatus - Google Patents

Transfer device, transfer method, and display apparatus Download PDF

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Publication number
WO2022171103A1
WO2022171103A1 PCT/CN2022/075592 CN2022075592W WO2022171103A1 WO 2022171103 A1 WO2022171103 A1 WO 2022171103A1 CN 2022075592 W CN2022075592 W CN 2022075592W WO 2022171103 A1 WO2022171103 A1 WO 2022171103A1
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WO
WIPO (PCT)
Prior art keywords
light source
transfer
light
substrate
transferred
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PCT/CN2022/075592
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French (fr)
Chinese (zh)
Inventor
李维善
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南昌广恒电子中心(有限合伙)
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Publication of WO2022171103A1 publication Critical patent/WO2022171103A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386Separation by peeling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Definitions

  • the embodiments of the present application relate to the field of display technology, for example, to a transfer device, a transfer method, and a display device.
  • the cathode ray picture tube (CRT, Cathode Ray Tube) display mode of the display device is gradually replaced by the liquid crystal (LCD, Liquid Crystal Display) display mode.
  • the organic light-emitting diode (OLED, Organic Light-Emitting Diode) ) display method and micro light-emitting diode (Micro LED or MINI LED) display method have been developed rapidly as a new generation of display technology.
  • Micro LED is known as the future display technology due to its advantages such as high response speed, high color gamut, high brightness and long life.
  • LCD with MINI LED backlight technology, quantum dot technology or high color rendering technology can improve contrast and color gamut. This allows LCDs to reduce contrast and color gamut disadvantages compared to OLEDs while maintaining longevity and brightness advantages.
  • Embodiments of the present application provide a transfer device, a transfer method, and a display device.
  • an embodiment of the present application provides a transfer device, including:
  • the transfer substrate is provided with optical excitation components arranged in an array, and the side of the optical excitation components away from the transfer substrate is used for placing the components to be transferred;
  • a light source device for generating light that excites the light-excited component
  • the light source control device is located on the optical path of the light generated by the light source device, and the light source control device is used to irradiate the light generated by the light source device to the corresponding light excitation component, so that the light source on the transfer substrate is At least a portion of the part to be transferred is transferred to the target substrate.
  • the embodiment of the present application also provides a transfer method, which can adopt the transfer device provided by any embodiment of the present application, and the transfer method includes:
  • a transfer substrate is provided, and the transfer substrate is aligned with the target substrate; the transfer substrate is provided with optical excitation components arranged in an array, and the side of the optical excitation component away from the transfer substrate is provided with the to-be-transferred part;
  • a light source device and a light source control device are provided, and the light source control device is placed on the light path generated by the light source device;
  • an embodiment of the present application further provides a display device, comprising: a driving backplane and a display chip disposed on the driving backplane, wherein the display chip adopts the transfer method described in any embodiment of the present application. The method is transferred to the drive backplane.
  • FIG. 1 is a schematic structural diagram of a transfer device according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of another transfer device provided by an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of an array circuit layer according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of another transfer device provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of another transfer device provided by an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of another transfer device provided by an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a transfer substrate according to an embodiment of the present application.
  • Fig. 8 is the cross-sectional structure schematic diagram along A-A in Fig. 7;
  • FIG. 9 is a schematic structural diagram of another transfer substrate provided by an embodiment of the present application.
  • FIG. 10 is a schematic flowchart of a transfer method provided by an embodiment of the present application.
  • FIG. 11 is a schematic structural diagram of a transfer device corresponding to each step in a transfer method provided by an embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of a transfer device according to an embodiment of the present application.
  • the transfer apparatus includes: a transfer substrate 100 , a light source device 800 and a light source control device 600 .
  • the transfer substrate 100 is provided with photo-excited components 130 arranged in an array, and a side of the photo-excited components 130 away from the transfer substrate 100 is used for placing components to be transferred (eg, chips 110 ).
  • the light source device 800 is used to generate light to excite the light excitation part 130 .
  • the light source control device 600 is located on the optical path of the light generated by the light source device 800, and the light source control device 600 is used to irradiate the light generated by the light source device 800 to the corresponding light excitation component 130, so that at least part of the to-be-transferred material on the transfer substrate 100 is irradiated. The parts are transferred to the target substrate 300 .
  • the parts to be transferred refer to parts that need to be transferred in large quantities, for example, parts with a size in the range of 1 ⁇ m-5 mm.
  • the components to be transferred include chips, other circuits or semiconductor devices, auxiliary components for transfer, and the like.
  • the following description takes the component to be transferred as a chip as an example, but this is not a limitation of this application.
  • the chip 110 can be, for example, a light-emitting device chip, for example, the chip 110 can be a Micro LED chip or a MINI LED chip, and a large number of light-emitting device chips 110 can be transferred, and finally a display device can be formed.
  • the transfer substrate 100 may also be referred to as a transition carrier board or a temporary carrier board for pre-arranging the chips 110 according to the size of the chips to be transferred. Generally speaking, the positions and orientations of the chips 110 placed on the transfer substrate 100 may be imprecise or even chaotic.
  • the photo-excited component 130 refers to a component that undergoes physical and/or chemical changes when excited under the action of specific light.
  • the photo-excited component 130 changes from a solid state or a liquid state to a gaseous state under the action of light, so as to generate gas expansion, and the chip 110 is transferred (printed) from the transfer substrate 100 to the target substrate 300 , and the main material of the photo-excited component 130 is
  • materials such as ether or oxidizing agent may be included;
  • the specific light includes at least one of laser, visible light or invisible light (such as UV (Ultraviolet) light).
  • the light source device 800 includes a laser generator, a visible light generator or a non-visible light. At least one of the generators is visible.
  • the target substrate 300 may also be referred to as a target carrier board, that is, the transfer target position of the chip 110 is a position on the target carrier board.
  • the transfer device provided by the embodiment of the present application, the positional accuracy of the chips 110 transferred to the target carrier board can be higher than the positional accuracy of the chips on the transfer substrate 100 .
  • both the transfer substrate 100 and the target substrate 300 are provided with high-precision alignment marks (Mark) to achieve accurate alignment, thereby helping to improve the transfer accuracy of the chip 110, for example, the accuracy of the alignment marks.
  • Mark high-precision alignment marks
  • the range can be from 1 ⁇ m to 5 mm.
  • the light excitation components 130 are arranged on the transfer substrate 100, and the light source device 800 and the light source control device 600 are arranged in the transfer equipment, so as to excite the corresponding light excitation components 130 to be excited to generate thrust, so that the corresponding chips are excited.
  • 110 is separated from the transfer substrate 100 . In this way, in the process of one transfer, only the chips 110 that meet the transfer accuracy can be transferred, and other chips 110 that do not meet the transfer accuracy can be transferred through alignment again. Compared with the mass transfer technology in the related art, the embodiment of the present application achieves accurate control and transfer of the chips 110 to be transferred, thereby improving the transfer precision and transfer yield.
  • the transfer substrate 100 itself is exemplarily a transparent substrate, so that the light can smoothly pass through the transfer substrate 100 and irradiate on the light excitation component 130 .
  • the transfer substrate 100 itself may also be a colored transparent substrate or a colorless transparent substrate, wherein if the transfer substrate 100 is a colored transparent substrate, the color of the transfer substrate 100 also needs to match the color of the light emitted by the light source device 800 .
  • the light source device 800 and the corresponding light source control device 600 can be set in various ways, as long as the light excitation components 130 on the transfer substrate 100 can be selectively excited to generate thrust, so that the chip 110 can be transferred from Embodiments of separation on the substrate 100 are all within the scope of protection of the present application. Several of them are described below, but are not intended to limit the present application.
  • FIG. 2 is a schematic structural diagram of another transfer device according to an embodiment of the present application.
  • the light source device 800 includes a backlight panel 810 for generating a surface light source.
  • the light source control device 600 includes a liquid crystal on silicon panel 610 , and the liquid crystal on silicon panel 610 includes an array circuit layer 611 and a liquid crystal layer 612 .
  • the array circuit layer 611 includes switching devices arranged in an array, and driving electrodes connected to the switching devices.
  • the liquid crystal layer 612 is disposed on one side of the array circuit layer 611 ; the liquid crystal layer 612 includes liquid crystal molecules, and the liquid crystal molecules are controlled by the corresponding driving electrodes to change their angles, so as to control the light generated by the backlight panel 810 to transmit to the corresponding light excitation components 130 . .
  • the liquid crystal molecules are controlled by the driving electrodes corresponding to the liquid crystal molecules to change their angles.
  • the liquid crystal on silicon panel 610 includes a plurality of control elements (similar to pixels in a display panel), and the control elements refer to switching devices, liquid crystal molecules corresponding to the switching devices, and driving electrodes connected to the switching devices.
  • the switching devices include semiconductor devices such as triodes or field effect transistors.
  • the field effect transistor includes a gate electrode, a source electrode and a drain electrode.
  • the switching device can be a triode or a field effect transistor set independently, or a combination of semiconductor devices, such as complementary metal oxide semiconductor (CMOS, Complementary Metal Oxide Semiconductor), etc., which can be set according to actual needs.
  • CMOS complementary metal oxide semiconductor
  • Complementary Metal Oxide Semiconductor Complementary Metal Oxide Semiconductor
  • the fabrication form of the switching device can be a thin film transistor (TFT, Thin Film Transistor), so as to reduce the thickness of the array circuit layer 611 and reduce the size of the transfer device.
  • TFT Thin Film Transistor
  • the thin film transistor or field effect transistor array can be directly fabricated on the substrate of the liquid crystal on silicon panel 610 by using a semiconductor process.
  • the switching device when the switching device is turned on, the corresponding driving electrode is energized, so as to control the deflection of the corresponding liquid crystal molecules, and the light passes through or is cut off.
  • One control element corresponds to at least one optical excitation component 130 , or at least one control element corresponds to one optical excitation component 130 .
  • the backlight panel 810 generates a surface light source to illuminate the entire liquid crystal on silicon panel 610. Only when the control element is turned on, can the light in the corresponding area be controlled to be emitted through the liquid crystal on silicon panel 610 and irradiate on the corresponding light excitation component 130.
  • the backlight panel 810 may include at least one of organic light emitting diodes, micro light emitting diodes, or diodes, for example.
  • the backlight panel 810 may further include a film layer such as a light guide layer, so that the backlight panel 810 emits light uniformly.
  • a film layer such as a light guide layer
  • the liquid crystal on silicon panel 610 may further include structures such as a cover plate 613 and a polarizer, so as to improve the stability of the liquid crystal on silicon panel 610 and optimize the performance of the liquid crystal on silicon panel 610 .
  • FIG. 3 is a schematic structural diagram of an array circuit layer according to an embodiment of the present application.
  • the array circuit layer 611 further includes a gate gate module 614 and a source gate module 615 .
  • the gate gating module 614 is connected to the switching devices; the gate gating module 614 is used to turn on the switching devices row by row, or to turn on the switching devices of at least part of the rows at the same time.
  • the source gating module 615 is connected to the switching device; the source gating module 615 is used to simultaneously send a driving signal to the driving electrodes of at least part of the columns through the switching device, so as to drive the liquid crystal molecules to deflect.
  • the array circuit layer 611 includes switching devices 6111 arranged in an array.
  • the driving mode of the gate gating module 614 is to turn on the switching devices row by row, or to simultaneously turn on the switching devices of at least part of the rows, which can be selected according to actual needs.
  • the driving mode of the source gate module 615 is to send driving signals to the driving electrodes of some columns through the switching device at the same time, or to send driving signals to the driving electrodes of all columns, which can be selected according to actual needs.
  • the array circuit layer 611 may be scanned in a row/column scanning manner.
  • the gate gating module 614 controls the on and off of the switching devices row by row.
  • the driving signal is output by the source gate module 615 and connected to the source writing of the corresponding switching device, thereby driving the liquid crystal molecules to deflect, excites the light excitation component 130 to perform the stamping action, and causes the corresponding chip 110 to perform the transfer action.
  • the chips 110 located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth row and the sixth column meet the transfer accuracy
  • the gate gating module 614 scans the switching devices in the first row
  • the source gating module 615 writes driving signals to the switching devices in the first column
  • the gate gating module 614 scans the switching devices in the second row
  • the source The gating module 615 writes driving signals to the switching devices in the second column; . . . and so on, until the gate gating module 614 scans the switching devices in the sixth row, and the source gating module 615 scans the switching devices in the sixth column. Write the drive signal.
  • the array circuit layer 611 may also be scanned in a surface scanning manner.
  • the gate gating module 614 simultaneously controls the on and off of multiple rows of switching devices.
  • the driving signal is output by the source gate module 615 and connected to the source writing of the corresponding switching device, thereby driving the liquid crystal molecules to deflect, excites the light excitation component 130 to perform the stamping action, and causes the corresponding chip 110 to perform the transfer action.
  • the chips 110 located in the first three columns of the first row, the first three columns of the second row, the first three columns of the third row, and the first three columns of the fourth row meet the transfer accuracy, and the gate gating module 614 simultaneously scans before Four rows of switching devices, and the source gating module 615 simultaneously writes driving signals to the switching devices of the first three columns.
  • the gate gate module 614 and the source gate module 615 can be selected from TFT, CMOS, or the like.
  • the embodiment of the present application adopts an active driving array, which can realize the scanning mode of row/column scanning or area scanning, so that the scanning and printing can be performed quickly, the transfer efficiency and stability are improved, and the operation difficulty is simplified.
  • the rows extend along the first direction X
  • the columns extend along the second direction Y
  • the first direction X and the second direction Y intersect.
  • the row and column directions may also be reversed.
  • the row extends along the second direction Y
  • the column extends along the first direction X.
  • FIG. 4 is a schematic structural diagram of another transfer device provided by an embodiment of the present application.
  • the light source device 800 includes a first light source 821 and a beam expander module 822 , the first light source 821 emits a light source beam, and the beam expander module 822 is used for diffusing the light source beam to generate a surface Light source;
  • the light source control device 600 includes a digital micromirror (DMD, Digital Micromirror Device) 620, and the digital micromirror 620 includes a driving array (not shown in FIG. 4 ) and a reflecting mirror 621 arranged in an array.
  • the driving array includes switching devices arranged in an array.
  • the reflector 621 is disposed corresponding to the switching device, for example, the reflector 621 is connected to the switching device.
  • the angle of the mirror 621 is adjustable under the control of the driving array, and is used to transmit the light generated by the light source device 800 to the corresponding light excitation component 130 .
  • the first light source 821 can generate a laser beam, and the laser beam has good stability and is not easily affected by the environment, thereby helping to improve the transfer accuracy of the transfer backplane.
  • the light source device 800 includes a collimation module for emitting the surface light source in parallel.
  • the mirrors 621 arranged in an array in the digital micromirror 620 can be controlled by a micro-electromechanical (MEMS, Micro Electro Mechanical System) mirror or the mirror 621 is controlled by a micro-electromechanical, so that the angle can be adjusted.
  • MEMS Micro Electro Mechanical System
  • the mirrors 621 and the photoexcitation components 130 may be set in one-to-one correspondence, at least two mirrors 621 and one photoexcitation component 130 may be set, and one mirror 621 may be set to correspond to at least two photoexcitation components 130, which can be set as required in practical applications.
  • the driving array can be scanned in a surface scanning manner.
  • the chips 110 located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth row and the sixth column meet the transfer accuracy,
  • the angle is such that the light irradiates on the corresponding photoexcitation part 130 , and the photoexcitation part 130 is excited to perform a stamping action, so that the corresponding chip 110 performs a transfer action.
  • the mirrors 621 at other positions by adjusting their angles, the light cannot be reflected, or the light is reflected to other areas outside the transfer substrate 100 .
  • the driving array may be scanned in a time-division scanning manner.
  • the digital micromirror 620 includes only one mirror 621, which is located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth column.
  • the chips 110 in the sixth row and the sixth column meet the transfer accuracy.
  • the angle of the mirror 621 is adjusted so that the light is irradiated to the photoexcitation components 130 in the first row and the first column; in the second period, the angle of the mirror 621 is adjusted.
  • the scanning interval periods such as the first period and the second period need to satisfy the excitation reaction time of the photoexcitation component 130 to ensure reliable excitation of the photoexcitation component 130 and reliable transfer of the chip 110 .
  • mirrors 621 provided on the digital micromirror 620 can work at the same time, thereby reducing the time for scanning and printing parts.
  • the light source device 800 includes a first light source 821 and a beam expander module 822, and the light source control device 600 includes a digital micromirror (DMD) 620, which is beneficial to realize the surface scanning of the light excitation component 130, thereby helping to improve the transfer efficiency .
  • DMD digital micromirror
  • the light source device 800 is exemplarily shown to generate a surface light source through the beam expander module 822, which is not a limitation of the present application.
  • a backlight panel may also be set to generate a surface light source, In practical applications, it can be set as required.
  • the beam expander module 822 may be a lens system.
  • FIG. 5 is a schematic structural diagram of another transfer device provided by an embodiment of the present application.
  • the light source device 800 includes a second light source 830, and the second light source 830 emits a light source beam;
  • the light source control device 600 includes a deflector 630, which is used to scan the light source beam to Corresponding photoexcited components 130 .
  • the second light source 830 can generate a laser beam, and the laser beam has good stability and is not easily affected by the environment, thereby helping to improve the transfer accuracy of the transfer backplane.
  • the deflector 630 includes a lens module 631, the lens module 631 is located on the optical path of the light emitted by the light source beam, and the lens module 631 is used to adjust the angle of the light.
  • the deflector 630 includes two lens modules 631, one lens module 631 can be rotated horizontally to adjust the horizontal propagation direction of light; the other lens module 631 can be rotated vertically to adjust the vertical propagation direction of light.
  • scanning may be performed in a time-division scanning manner.
  • the chips 110 located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth row and the sixth column meet the transfer accuracy
  • the angle of the deflector 630 is adjusted so that the light is irradiated to the photoexcitation elements 130 in the first row and the first column
  • the angle of the deflector 630 is adjusted so that the light is irradiated on the second row and the second column and so on, until the scanning reaches the sixth row and sixth column.
  • the scanning interval periods such as the first period and the second period need to satisfy the excitation reaction time of the photoexcitation component 130 to ensure reliable excitation of the photoexcitation component 130 and reliable transfer of the chip 110 .
  • the deflector 630 is set as the lens module 631 as an example for illustration, which is not a limitation of the present application.
  • MEMS mirrors which can be set as needed in practical applications.
  • the first light source and/or the second light source 830 may be a monochromatic light generator, or may be composed of multiple monochromatic light generators and light combiners. In practical applications Can be set as required.
  • FIG. 6 is a schematic structural diagram of another transfer device according to an embodiment of the present application.
  • the transfer apparatus further includes: an optical measurement device 400 and a data processing device 500 .
  • the optical measurement device 400 is used to measure the information contained in the transfer substrate 100 or the target substrate 300 .
  • the data processing device 500 is connected with the optical measuring device, and is used for determining the number and position of the chips 110 to be transferred on the transfer substrate 100 according to the information measured by the optical measuring device 400; and the data processing device 500 is also connected with the light source control device 600, In order to control the light source control device 600 , the light emitted by the light source device 800 is transmitted to the corresponding light excitation component 130 .
  • the optical measurement device 400 may be, for example, an automatic optical inspection device (AOI, Automated Optical Inspection), or an X-ray (X Ray) measurement device.
  • the measured information of the transfer substrate 100 may be, for example, the position of the chip 110 on the transfer substrate 100 , the shape of the chip 110 on the transfer substrate 100 , the crack of the chip 110 on the transfer substrate 100 , the orientation of the chip 110 on the transfer substrate 100 , the transfer substrate 100 The position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , the direction of the alignment mark on the transfer substrate 100 , and the like.
  • the measured position information of the target substrate 300 may be, for example, the position of the alignment mark on the target substrate 300, the shape of the alignment mark on the target substrate 300, the direction of the alignment mark on the target substrate 300, the position of the pad on the target substrate 300, The shape of the pads on the target substrate 300, the direction of the pads on the target substrate 300, and the like. Therefore, the alignment mark detected by the optical measuring device 400 may be an alignment point or an alignment point array. The information detected by the optical measurement device 400 can be used to perform alignment, and can also be used to determine whether the chip 110 meets the alignment requirements.
  • the data processing device 500 may be, for example, a chip with a data processing function, such as a microprocessor, a single-chip microcomputer, or a digital signal processor (DSP, Digital Signal Processing).
  • the data processing apparatus 500 can process position information such as the position of the chip 110 on the transfer substrate 100 , the position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , or the direction of the alignment mark on the transfer substrate 100 . Through processing and calculation, the position of the transfer substrate 100 and the position of each chip 110 on the transfer substrate 100 can be obtained.
  • the data processing device 500 can perform the alignment mark position on the target substrate 300 , the alignment mark shape on the target substrate 300 , the alignment mark direction on the target substrate 300 , the pad position on the target substrate 300 , and the target substrate 300 .
  • the position of the target substrate 300 and the precise placement of the chips 110 on the target substrate 300 can be obtained.
  • the data processing device 500 can process and calculate the shape of the chips 110 on the transfer substrate 100 or the cracks of the chips 110 on the transfer substrate 100 , so as to obtain the number and position of the defective chips 110 .
  • the data processing device 500 combines the above information to determine whether the transfer substrate 100 and the target substrate 300 are aligned, and determine whether each chip 110 meets the transfer accuracy, thereby determining the number and position of the chips 110 to be transferred on the transfer substrate 100, and then to control the light source
  • the device 600 is controlled so that the light emitted by the light source device 800 is transmitted to the corresponding light excitation component 130 .
  • the transfer apparatus provided in the embodiment of the present application further includes an optical measurement device and a data processing device, which measure the transfer substrate 100 and the target substrate 300, thereby further improving the transfer accuracy.
  • the optical detection device 400 is exemplarily shown to detect the positions of the target substrate 300 and the transfer substrate 100 , which is not a limitation of the present application. In other embodiments, the optical detection device 400 may not be provided, and the number and position of the chips 110 to be transferred may also be pre-stored, or the chips 110 on the transfer substrate 100 have been regularly and accurately aligned. In practical applications Whether or not to install an optical detection device can be selected as required.
  • the arrangement density of the light excitation components 130 is the same as the arrangement density of the chips 110, that is, the light excitation components 130 correspond to the chips 110 one-to-one.
  • the arrangement density of the light excitation components 130 may also be set to be different from the arrangement density of the chips 110 .
  • the arrangement density of the optical excitation components 130 is n times the arrangement density of the chips 110 , and n is a positive integer such as 2, 3, 4, 5, 10, etc.
  • FIG. 7 is a schematic structural diagram of a transfer substrate according to an embodiment of the present application
  • FIG. 8 is a cross-sectional structural schematic diagram along A-A in FIG. 7
  • the optical excitation component 130 changes from a solid state or a liquid state to a gas state under the action of light.
  • the transfer substrate 100 further includes: at least one via hole 101, the via hole 101 is located in the middle, the edge, or the area between the middle and the edge of the transfer substrate 100, the via hole 101 forms a negative pressure gas passage, and the negative pressure gas passage is used to discharge the generated gas. gas, so as to avoid excessive energy of the gas (explosive gas) excited by the light excitation component 130 and cause damage to the chip 110 .
  • a neutralizing component is mixed in the optical excitation component 130, and the neutralizing component is used to neutralize harmful substances in the gas, or the neutralizing component generates a neutralizing gas under optical excitation to neutralize harmful materials.
  • the harmful substances may be, for example, toxic or acidic or alkaline substances.
  • the neutralizing member can be activated carbon, for example.
  • the neutralizing gas produced by the neutralizing component corresponds to the harmful substance. If the harmful substance is acidic, the corresponding neutralizing gas is alkaline; if the harmful substance is alkaline, the corresponding neutralizing gas is acidic.
  • FIG. 9 is a schematic structural diagram of another transfer substrate 100 according to an embodiment of the present application.
  • the transfer apparatus further includes an execution film 140 , and the execution film 140 is disposed on a side of the light excitation component 130 away from the transfer substrate 100 .
  • the material of the execution film 140 can be, for example, a flexible material, a material with a higher tensile rupture ratio. In this way, after the optical excitation component 130 is excited to generate gas, the deformation of the execution film 140 is greater than the deformation of the transfer substrate 100 , so that the chip 110 is separated from the execution film 140 .
  • the setting of the execution film 140 can make the gas expansion generated by the excited light excitation component 130 not directly act on the chip 110, but act on the to-be-transferred chip 110 through the execution film 140, which plays the role of buffering and uniform stress, Improved transfer accuracy.
  • the arrangement of the film 140 can reduce the contact between the gas generated by the optical excitation component 130 and the to-be-transferred chip 110 , thereby avoiding damages such as corrosion of the to-be-transferred chip 110 by the gas generated by the excited part 120 .
  • the transfer apparatus further includes an auxiliary triggering component, and the auxiliary triggering component may be, for example, a magnetic triggering component that can provide additional force to the chips 110 to be transferred on the transfer substrate 100 . Trigger components to assist in the transfer of the chip 110 .
  • the target substrate 300 is another transfer substrate, a backlight driving backplane or a display driving backplane.
  • the chip transfer operation can be repeated multiple times, and the precision of the chip 110 is higher each time the transfer is performed. In this way, a larger number of chips 110 can meet the transfer precision in each transfer operation, which is beneficial to improve the transfer efficiency.
  • the target substrate 300 can be, for example, a glass substrate or a quartz substrate, etc., which is beneficial to improve the dimensional stability, thermal stability and chemical stability of the target substrate 300 , thereby improving the transfer accuracy.
  • the chip 110 is a backlight chip. After all the chips 110 are transferred to the backlight driving backplane, it is necessary to use hot pressing, UV curing and reflow soldering to connect the chip 110 to the backlight. The pads on the drive backplane are soldered to form a backlight source in a display device. If the target substrate 300 is a display driver backplane, at this time, the chip 110 is a display chip. After all the chips 110 are transferred to the display driver backplane, the chip 110 needs to be connected to the display driver by hot pressing, UV curing, and reflow soldering. The pads on the drive backplane are soldered to form the pixels in the display device.
  • a driving circuit such as a backlight driving backplane or a display driving backplane is provided with a driving circuit.
  • the transfer substrate 100 and the driving backplane can also support and protect the chip. , to protect the function of the lines on the drive backplane.
  • the drive backplane can use flexible materials such as polyimide (PI, Polyimide), polycarbonate (PC, Polycarbonate) or polyethylene terephthalate (PET, polyethylene glycol terephthalate) as a substrate to achieve Flexible display.
  • the circuit film layer in the driving backplane can be an organic thin film transistor (OTFT, Organic Thin Film Transistor) or an organic field effect transistor (OMOS, Organic MOS).
  • the driving backplane can be a glass substrate or a quartz substrate with driving lines engraved on it, or a flexible printed circuit board (FPC, Flexible Printed Circuit), a printed circuit board (PCB, Printed Circuit Board), and the like.
  • the transfer apparatus further includes a moving device, and the moving device is used to drive the transfer substrate 100 to move, so that the transfer substrate 100 and the target substrate 300 are aligned.
  • the moving device is used to drive the transfer substrate 100 to move, so that the transfer substrate 100 and the target substrate 300 are aligned.
  • only the transfer substrate 100 is set to be displaced and aligned, which is beneficial to reduce the manufacturing cost of the transfer device.
  • the transfer apparatus includes a movement device, and the movement device is used to control the displacement of the transfer substrate 100 and the target substrate 300 .
  • the motion device may be, for example, a device capable of controlling the displacement of the substrate, such as a robot arm.
  • the motion device can drive the transfer substrate 100 and the target substrate 300 to perform alignment during the displacement process. For example, dynamic punching is performed by calculating the motion advance, which is beneficial to further improve the transfer accuracy.
  • the light excitation component 130 is arranged on the transfer substrate 100, and the light source device 800 and the light source control device 600 are arranged in the transfer equipment, so as to excite the corresponding light excitation component 130 to be excited to generate thrust, Thereby, the corresponding chips 110 are separated from the transfer substrate 100 .
  • the embodiment of the present application achieves accurate control and transfer of the chips 110 to be transferred, thereby improving the transfer precision and transfer yield.
  • the light source device 800 may be a backlight panel, and the light source control device 600 may be a liquid crystal on silicon panel to implement row/column scanning or area scanning, thereby improving the efficiency of mass transfer.
  • the light source device 800 may include a first light source for generating a light source beam and a beam expander module, and the light source control device 600 may be a digital micromirror to realize row/column scanning or area scanning, thereby improving the efficiency of mass transfer. efficiency.
  • the light source device 800 may include a second light source that generates a light source beam, and the light source control device 600 may be a deflector to enable row/column scanning. In one embodiment, by arranging the optical measuring device 400, the alignment accuracy can be improved, thereby further improving the transfer accuracy.
  • FIG. 10 is a schematic flowchart of a transfer method provided by an embodiment of the present application
  • FIG. 11 is a schematic structural diagram of a transfer device corresponding to each step in the transfer method provided by an embodiment of the present application. 10 and 11, the transfer method includes the following steps:
  • the target substrate 300 may also be referred to as a target carrier board, that is, the transfer target position of the chip 110 is a position on the target substrate 300 .
  • the transfer substrate 100 is provided with photoexcitation components 130 arranged in an array, and the photoexcitation components 130 are provided with chips to be transferred on the side away from the transfer substrate 100 110.
  • the transfer substrate 100 may also be called a transition carrier board or a temporary carrier board, and is used to pre-arrange the chips 110 according to the size of the chips to be transferred. Generally speaking, the positions and orientations of the chips 110 placed on the transfer substrate 100 may be imprecise or even chaotic. In other embodiments, the chips 110 on the transfer substrate 100 are regularly and precisely aligned, and the number and position of the chips 110 to be transferred may be stored in advance.
  • the photo-excited component 130 refers to a component that undergoes physical and/or chemical changes when excited under the action of specific light.
  • the photo-excited component 130 changes from a solid state or a liquid state to a gaseous state under the action of light, so as to generate gas expansion, and the chip 110 is transferred (printed) from the transfer substrate 100 to the target substrate 300 , and the main material of the photo-excited component 130 is
  • materials such as ether or oxidant may be included;
  • the specific light includes at least one of laser light, visible light or invisible light (eg UV light), and correspondingly, the light source device 800 includes a laser generator, a visible light generator or an invisible light generator. at least one.
  • the transfer substrate 100 and the target substrate 300 are aligned during the displacement process.
  • dynamic punching is performed by calculating the motion advance, which is beneficial to further improve the transfer accuracy.
  • the light source device 800 and the light source control device 600 cooperate to realize the control of the light signal, so as to excite the corresponding light excitation component 130 .
  • the light source device 800 may be a backlight panel, and the light source control device 600 may be a liquid crystal on silicon panel to implement row/column scanning or area scanning, thereby improving the efficiency of mass transfer.
  • the light source device 800 may include a first light source for generating a light source beam and a beam expander module, and the light source control device 600 may be a digital micromirror to realize row/column scanning or area scanning, thereby improving the efficiency of mass transfer. efficiency.
  • the light source device 800 may include a second light source that generates a light source beam, and the light source control device 600 may be a deflector to enable row/column scanning.
  • the light excitation component 130 there are various ways to scan the light excitation component 130 with the light generated by the light source device 800 , for example, controlling the light source device 800 to generate a surface light source; Or, for example, the light source device 800 is controlled to generate a light source beam; the light source control device 600 is driven to perform single-point scanning on the chip 110 that satisfies the transfer accuracy.
  • At least part means part or all. If all the chips 110 to be transferred meet the transfer accuracy, then the number of chips transferred to the target substrate 300 is the full number; if only part of the chips 110 to be transferred meet the transfer accuracy, then the chips are transferred to The number of chips of the target substrate 300 is the number of parts.
  • the method for determining whether the position of the chip on the transfer substrate 100 meets the transfer requirement is to compare the position of the chip on the transfer substrate 100 with a preset position on the target substrate 300 or the position of the chip pads (for example, making a Poor), judge whether the two positions overlap completely or partially, if they overlap completely, the transfer requirements are met; if they overlap partially, compare the minimum overlapping area with the set threshold to determine whether the threshold requirements are met.
  • FIG. 11 exemplarily shows that all the chips 110 satisfy the transfer accuracy, and all the chips 110 are transferred to the target substrate 300 .
  • only some of the chips 110 on the transfer substrate 100 can meet the transfer accuracy, and the chips 110 that meet the transfer accuracy are transferred by the corresponding optical excitation components 130 to complete the first stamping action. Then, the transfer substrate 100 and the target substrate 300 are aligned again, so that the remaining at least part of the chips 110 can satisfy the alignment accuracy. And so on, until all the remaining chips 110 are transferred.
  • the light source device 800 and the light source control device 600 are used to excite the corresponding light excitation components 130 on the transfer substrate 100 to perform a stamping operation, so that the corresponding chips 110 are separated from the transfer substrate 100 .
  • the embodiment of the present application achieves accurate control and transfer of the chips 110 to be transferred, thereby improving the transfer precision and transfer yield.
  • the transfer method further includes the following steps:
  • the positions of the transfer substrate 100 and the target substrate 300 are measured using an optical measuring device to obtain transfer information.
  • the optical measuring device 400 may be, for example, an automatic optical inspection device (AOI), or an X-ray (X-ray) measuring device.
  • the measured information of the transfer substrate 100 may be, for example, the position of the chip 110 on the transfer substrate 100 , the shape of the chip 110 on the transfer substrate 100 , the crack of the chip 110 on the transfer substrate 100 , the orientation of the chip 110 on the transfer substrate 100 , the transfer substrate 100 The position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , the direction of the alignment mark on the transfer substrate 100 , and the like.
  • the measured position information of the target substrate 300 may be, for example, the position of the alignment mark on the target substrate 300, the shape of the alignment mark on the target substrate 300, the direction of the alignment mark on the target substrate 300, the position of the pad on the target substrate 300, The shape of the pads on the target substrate 300 or the direction of the pads on the target substrate 300, and the like. Therefore, the alignment mark detected by the optical measuring device 400 may be an alignment point or an alignment point array. The information detected by the optical measurement device 400 can be used to perform alignment, and can also be used to determine whether the chip 110 meets the alignment requirements.
  • the data processing device performs processing according to the transfer information, determines whether the position of the chip 110 on the transfer substrate 100 meets the transfer accuracy, and obtains quantity information and position information; the light source control device 600 adjusts the light generated by the light source device 800 according to the quantity information and the position information path of.
  • the data processing device 500 may be, for example, a chip with a data processing function, such as a microprocessor, a single-chip microcomputer, or a digital signal processor (DSP).
  • the data processing apparatus 500 can process position information such as the position of the chip 110 on the transfer substrate 100 , the position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , or the direction of the alignment mark on the transfer substrate 100 . Through processing and calculation, the position of the transfer substrate 100 and the position of each chip 110 on the transfer substrate 100 can be obtained.
  • the data processing device 500 can perform the alignment mark position on the target substrate 300 , the alignment mark shape on the target substrate 300 , the alignment mark direction on the target substrate 300 , the pad position on the target substrate 300 , and the target substrate 300 .
  • the position of the target substrate 300 and the precise placement of the chips 110 on the target substrate 300 can be obtained.
  • the data processing device 500 can process and calculate the shape of the chips 110 on the transfer substrate 100 or the cracks of the chips 110 on the transfer substrate 100 , so as to obtain the number and position of the defective chips 110 .
  • the data processing device 500 combines the above information to determine whether the transfer substrate 100 and the target substrate 300 are aligned, and determine whether each chip 110 meets the transfer accuracy, thereby determining the number and position of the chips 110 to be transferred on the transfer substrate 100, and then to control the light source
  • the device 600 is controlled so that the light emitted by the light source device 800 is transmitted to the corresponding light excitation component 130 .
  • the transfer apparatus provided in the embodiment of the present application further includes an optical measurement device and a data processing device, which measure the transfer substrate 100 and the target substrate 300, thereby further improving the transfer accuracy.
  • the embodiment of the present application also provides a display device, which can be an LCD display device equipped with a Mini LED backlight, an LCD display device equipped with a Micro LED backlight, a Mini LED display device or a Micro LED display device.
  • the display device includes: a driving backplane and a display chip (for example, a Mini LED chip or a Micro LED chip) disposed on the driving backplane, wherein the display chip is transferred to the driving backplane using the transfer method provided in any embodiment of the present application superior.
  • the driving backplane may use flexible materials such as polyimide (PI), polycarbonate (PC), or polyethylene terephthalate (PET) as a substrate to realize flexible display.
  • the circuit film layer in the driving backplane can be an organic thin film transistor (OTFT) or an organic field effect transistor (OMOS).
  • the driving backplane may be a glass substrate or a quartz substrate with driving lines engraved on it, or a flexible printed circuit board (FPC), a printed circuit board (PCB), or the like.
  • Embodiments of the present application provide a transfer apparatus, a transfer method, and a display device, so as to improve the precision and yield of mass transfer.
  • An embodiment of the present application further provides a display device, comprising: a driving backplane and a component to be transferred disposed on the driving backplane, wherein the component to be transferred is transferred as described in any embodiment of the present application The method is transferred to the drive backplane.

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Abstract

Embodiments of the present application disclose a transfer device, a transfer method, and a display apparatus. The transfer device comprises: a transfer substrate, the transfer substrate being provided with light excitation components arranged in an array, and the sides of the light excitation components away from the transfer substrate being used for placing components to be transferred; a light source apparatus, used for generating light for exciting the light excitation components; and a light source control apparatus, located on a light path of the light generated by the light source apparatus, the light source control apparatus being used for irradiating the light generated by the light source apparatus to the corresponding light excitation component, such that at least some of the components to be transferred on the transfer substrate are transferred to a target substrate.

Description

转移设备、转移方法和显示装置Transfer apparatus, transfer method and display device
本申请要求在2021年02月09日提交中国专利局、申请号为202110181077.3的中国专利申请的优先权,以上申请的全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with application number 202110181077.3 filed with the China Patent Office on February 09, 2021, the entire contents of the above application are incorporated into this application by reference.
技术领域technical field
本申请实施例涉及显示技术领域,例如涉及一种转移设备、转移方法和显示装置。The embodiments of the present application relate to the field of display technology, for example, to a transfer device, a transfer method, and a display device.
背景技术Background technique
随着显示技术的不断发展,显示装置由阴极射线显像管(CRT,Cathode Ray Tube)显示方式逐渐被液晶(LCD,Liquid Crystal Display)显示方式替代,近年来有机发光二极管(OLED,Organic Light-Emitting Diode)显示方式和微小发光二极管(Micro LED或MINI LED)显示方式等作为新一代显示技术得到了迅猛发展。其中,Micro LED由于其高响应速度、高色域、高亮度和长寿命等优势,被称为未来显示技术。LCD配合MINI LED背光技术、量子点技术或者高演色性技术,能够提高对比度和色域。这使得LCD与OLED相比,在保持寿命、亮度优势的同时,缩小了对比度和色域劣势。With the continuous development of display technology, the cathode ray picture tube (CRT, Cathode Ray Tube) display mode of the display device is gradually replaced by the liquid crystal (LCD, Liquid Crystal Display) display mode. In recent years, the organic light-emitting diode (OLED, Organic Light-Emitting Diode) ) display method and micro light-emitting diode (Micro LED or MINI LED) display method have been developed rapidly as a new generation of display technology. Among them, Micro LED is known as the future display technology due to its advantages such as high response speed, high color gamut, high brightness and long life. LCD with MINI LED backlight technology, quantum dot technology or high color rendering technology can improve contrast and color gamut. This allows LCDs to reduce contrast and color gamut disadvantages compared to OLEDs while maintaining longevity and brightness advantages.
然而,Micro LED和MINI LED在制作的过程中,需要采用大批量转移技术。大批量转移技术采用机械式打件、印章式、静电式或流体组装等等,但是,转移技术存在精度低、良率低的问题,难以支撑Micro LED和MINI LED技术的大批量生产和普及化,因此,转移技术成为Micro LED和MINI LED技术的瓶颈之一。However, in the production process of Micro LED and MINI LED, mass transfer technology is required. The mass transfer technology adopts mechanical stamping, stamping, electrostatic or fluid assembly, etc. However, the transfer technology has the problems of low precision and low yield, and it is difficult to support the mass production and popularization of Micro LED and MINI LED technology , therefore, transfer technology has become one of the bottlenecks of Micro LED and MINI LED technology.
发明内容SUMMARY OF THE INVENTION
本申请实施例提供一种转移设备、转移方法和显示装置。Embodiments of the present application provide a transfer device, a transfer method, and a display device.
第一方面,本申请实施例提供了一种转移设备,包括:In a first aspect, an embodiment of the present application provides a transfer device, including:
转移基板,所述转移基板上设置有呈阵列排布的光激发部件,所述光激发部件远离所述转移基板的一侧用于放置待转移的部件;a transfer substrate, the transfer substrate is provided with optical excitation components arranged in an array, and the side of the optical excitation components away from the transfer substrate is used for placing the components to be transferred;
光源装置,用于产生激发所述光激发部件的光;a light source device for generating light that excites the light-excited component;
光源控制装置,位于所述光源装置产生的光的光路上,所述光源控制装置用于将所述光源装置产生的光照射至对应的所述光激发部件上,以使所述转移基板上的至少部分待转移的部件转移至目标基板。The light source control device is located on the optical path of the light generated by the light source device, and the light source control device is used to irradiate the light generated by the light source device to the corresponding light excitation component, so that the light source on the transfer substrate is At least a portion of the part to be transferred is transferred to the target substrate.
第二方面,本申请实施例还提供了一种转移方法,可采用本申请任意实施例所提供的转移设备,转移方法包括:In the second aspect, the embodiment of the present application also provides a transfer method, which can adopt the transfer device provided by any embodiment of the present application, and the transfer method includes:
提供目标基板;Provide the target substrate;
提供转移基板,将所述转移基板与所述目标基板对位;所述转移基板上设置有呈阵列排布的光激发部件,所述光激发部件远离所述转移基板的一侧设置有待转移的部件;A transfer substrate is provided, and the transfer substrate is aligned with the target substrate; the transfer substrate is provided with optical excitation components arranged in an array, and the side of the optical excitation component away from the transfer substrate is provided with the to-be-transferred part;
提供光源装置和光源控制装置,将所述光源控制装置放置于所述光源装置产生的光路上;A light source device and a light source control device are provided, and the light source control device is placed on the light path generated by the light source device;
控制所述光源控制装置,将所述光源装置产生的光照射至对应的所述光激发部件上,以使所述转移基板上的至少部分待转移的部件转移至目标基板上;其中,被转移的所述部件满足转移精度。Controlling the light source control device to irradiate the light generated by the light source device to the corresponding light excitation components, so that at least part of the components to be transferred on the transfer substrate are transferred to the target substrate; wherein, the transferred components The parts meet the transfer accuracy.
第三方面,本申请实施例还提供了一种显示装置,包括:驱动背板和设置于所述驱动背板上的显示芯片,其中,所述显示芯片采用如本申请任意实施例所述转移方法转移至所述驱动背板上。In a third aspect, an embodiment of the present application further provides a display device, comprising: a driving backplane and a display chip disposed on the driving backplane, wherein the display chip adopts the transfer method described in any embodiment of the present application. The method is transferred to the drive backplane.
附图说明Description of drawings
图1为本申请实施例提供的一种转移设备的结构示意图;1 is a schematic structural diagram of a transfer device according to an embodiment of the present application;
图2为本申请实施例提供的另一种转移设备的结构示意图;FIG. 2 is a schematic structural diagram of another transfer device provided by an embodiment of the present application;
图3为本申请实施例提供的一种阵列电路层的结构示意图;FIG. 3 is a schematic structural diagram of an array circuit layer according to an embodiment of the present application;
图4为本申请实施例提供的又一种转移设备的结构示意图;FIG. 4 is a schematic structural diagram of another transfer device provided by an embodiment of the present application;
图5为本申请实施例提供的又一种转移设备的结构示意图;FIG. 5 is a schematic structural diagram of another transfer device provided by an embodiment of the present application;
图6为本申请实施例提供的又一种转移设备的结构示意图;FIG. 6 is a schematic structural diagram of another transfer device provided by an embodiment of the present application;
图7为本申请实施例提供的一种转移基板的结构示意图;FIG. 7 is a schematic structural diagram of a transfer substrate according to an embodiment of the present application;
图8为沿图7中A-A的剖面结构示意图;Fig. 8 is the cross-sectional structure schematic diagram along A-A in Fig. 7;
图9为本申请实施例提供的另一种转移基板的结构示意图;FIG. 9 is a schematic structural diagram of another transfer substrate provided by an embodiment of the present application;
图10为本申请实施例提供的一种转移方法的流程示意图;10 is a schematic flowchart of a transfer method provided by an embodiment of the present application;
图11为本申请实施例提供的一种转移方法中的每个步骤对应的转移设备的结构示意图。FIG. 11 is a schematic structural diagram of a transfer device corresponding to each step in a transfer method provided by an embodiment of the present application.
具体实施方式Detailed ways
下面结合附图和实施例对本申请作进一步说明。可以理解的是,此处所描述的具体实施例仅仅用于解释本申请,而非对本申请的限定。另外还需要说明 的是,为了便于描述,附图中仅示出了与本申请相关的部分而非全部结构。The present application will be further described below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application. It should also be noted that, for the convenience of description, the drawings only show some but not all structures related to the present application.
本申请实施例提供了一种转移设备。图1为本申请实施例提供的一种转移设备的结构示意图。参见图1,转移设备包括:转移基板100、光源装置800和光源控制装置600。转移基板100上设置有呈阵列排布的光激发部件130,光激发部件130远离转移基板100的一侧用于放置待转移的部件(例如,芯片110)。光源装置800用于产生激发光激发部件130的光。光源控制装置600位于光源装置800产生的光的光路上,光源控制装置600用于将光源装置800产生的光照射至对应的光激发部件130上,以使转移基板100上的至少部分待转移的部件转移至目标基板300。The embodiment of the present application provides a transfer device. FIG. 1 is a schematic structural diagram of a transfer device according to an embodiment of the present application. Referring to FIG. 1 , the transfer apparatus includes: a transfer substrate 100 , a light source device 800 and a light source control device 600 . The transfer substrate 100 is provided with photo-excited components 130 arranged in an array, and a side of the photo-excited components 130 away from the transfer substrate 100 is used for placing components to be transferred (eg, chips 110 ). The light source device 800 is used to generate light to excite the light excitation part 130 . The light source control device 600 is located on the optical path of the light generated by the light source device 800, and the light source control device 600 is used to irradiate the light generated by the light source device 800 to the corresponding light excitation component 130, so that at least part of the to-be-transferred material on the transfer substrate 100 is irradiated. The parts are transferred to the target substrate 300 .
其中,待转移的部件是指需要进行大批量转移的部件,例如尺寸在1μm-5mm范围内的部件。示例性地,待转移的部件包括芯片、其他电路或半导体器件、用于转移的辅助部件等。下面以待转移的部件为芯片为例进行说明,但不作为对本申请的限定。芯片110例如可以是发光器件芯片,例如,芯片110可以是Micro LED芯片或MINI LED芯片,对大批量的发光器件芯片110进行转移,最终可以形成显示装置。转移基板100又可以称作过渡承载板或临时承载板,用于按照待转移的芯片尺寸对芯片110进行预先排列。一般而言,转移基板100上所放置的芯片110的位置和方向可以是不精确的,甚至是杂乱无章的。光激发部件130是指在特定光照的作用下受到激发,而发生物理和/或化学变化的部件。示例性地,光激发部件130在光的作用下由固态或液态变为气态,从而产生气体膨胀,将芯片110由转移基板100转移(打件)至目标基板300,光激发部件130的主体材料例如可以包括乙醚或氧化剂等材料;特定光照包括激光、可见光或非可见光(例如UV(Ultraviolet,紫外线)光)中的至少一种,对应的,光源装置800包括激光发生器、可见光发生器或非可见发生器中的至少一种。目标基板300又可以称作目标承载板,即芯片110的转移目标位置是目标承载板上的位置。采用本申请实施例提供的转移设备,能够使转移到目标承载板上的芯片110的位置精度高于转移基板100上的芯片位置精度。在一实施例中,转移基板100和目标基板300上均设置有高精度的对位标记(Mark),以实现准确对位,从而有利于提高芯片110的转移精度,例如,对位标记的精度范围可以为1μm~5mm。Among them, the parts to be transferred refer to parts that need to be transferred in large quantities, for example, parts with a size in the range of 1 μm-5 mm. Illustratively, the components to be transferred include chips, other circuits or semiconductor devices, auxiliary components for transfer, and the like. The following description takes the component to be transferred as a chip as an example, but this is not a limitation of this application. The chip 110 can be, for example, a light-emitting device chip, for example, the chip 110 can be a Micro LED chip or a MINI LED chip, and a large number of light-emitting device chips 110 can be transferred, and finally a display device can be formed. The transfer substrate 100 may also be referred to as a transition carrier board or a temporary carrier board for pre-arranging the chips 110 according to the size of the chips to be transferred. Generally speaking, the positions and orientations of the chips 110 placed on the transfer substrate 100 may be imprecise or even chaotic. The photo-excited component 130 refers to a component that undergoes physical and/or chemical changes when excited under the action of specific light. Exemplarily, the photo-excited component 130 changes from a solid state or a liquid state to a gaseous state under the action of light, so as to generate gas expansion, and the chip 110 is transferred (printed) from the transfer substrate 100 to the target substrate 300 , and the main material of the photo-excited component 130 is For example, materials such as ether or oxidizing agent may be included; the specific light includes at least one of laser, visible light or invisible light (such as UV (Ultraviolet) light). Correspondingly, the light source device 800 includes a laser generator, a visible light generator or a non-visible light. At least one of the generators is visible. The target substrate 300 may also be referred to as a target carrier board, that is, the transfer target position of the chip 110 is a position on the target carrier board. By using the transfer device provided by the embodiment of the present application, the positional accuracy of the chips 110 transferred to the target carrier board can be higher than the positional accuracy of the chips on the transfer substrate 100 . In one embodiment, both the transfer substrate 100 and the target substrate 300 are provided with high-precision alignment marks (Mark) to achieve accurate alignment, thereby helping to improve the transfer accuracy of the chip 110, for example, the accuracy of the alignment marks. The range can be from 1 μm to 5 mm.
本申请实施例通过在转移基板100上设置光激发部件130,并在转移设备中设置光源装置800和光源控制装置600,以激发对应的光激发部件130受到激发而产生推力,从而使得对应的芯片110从转移基板100分离。这样设置,可以 在一次转移的过程中,仅转移满足转移精度的芯片110,其他不满足转移精度的芯片110可以经过再次对位进行转移。与相关技术中的大批量转移技术相比,本申请实施例实现了对待转移的芯片110的准确控制和转移,从而提高了转移精度和转移良率。In this embodiment of the present application, the light excitation components 130 are arranged on the transfer substrate 100, and the light source device 800 and the light source control device 600 are arranged in the transfer equipment, so as to excite the corresponding light excitation components 130 to be excited to generate thrust, so that the corresponding chips are excited. 110 is separated from the transfer substrate 100 . In this way, in the process of one transfer, only the chips 110 that meet the transfer accuracy can be transferred, and other chips 110 that do not meet the transfer accuracy can be transferred through alignment again. Compared with the mass transfer technology in the related art, the embodiment of the present application achieves accurate control and transfer of the chips 110 to be transferred, thereby improving the transfer precision and transfer yield.
在上述各实施例中,示例性地,转移基板100自身为透明基板,以使光线能够顺利透过转移基板100而照射在光激发部件130上。转移基板100自身还可以是有色透明基板或无色透明基板,其中,若转移基板100为有色透明基板,转移基板100的颜色还需要与光源装置800发出的光的颜色匹配。In the above-mentioned embodiments, the transfer substrate 100 itself is exemplarily a transparent substrate, so that the light can smoothly pass through the transfer substrate 100 and irradiate on the light excitation component 130 . The transfer substrate 100 itself may also be a colored transparent substrate or a colorless transparent substrate, wherein if the transfer substrate 100 is a colored transparent substrate, the color of the transfer substrate 100 also needs to match the color of the light emitted by the light source device 800 .
在本申请实施例中,光源装置800以及对应的光源控制装置600的设置方式有多种,只要能使得转移基板100上的光激发部件130有选择地被激发而产生推力,使得芯片110从转移基板100上分离的实施方式均在本申请的保护范围内。下面就其中的几种进行说明,但不作为对本申请的限定。In the embodiment of the present application, the light source device 800 and the corresponding light source control device 600 can be set in various ways, as long as the light excitation components 130 on the transfer substrate 100 can be selectively excited to generate thrust, so that the chip 110 can be transferred from Embodiments of separation on the substrate 100 are all within the scope of protection of the present application. Several of them are described below, but are not intended to limit the present application.
图2为本申请实施例提供的另一种转移设备的结构示意图。参见图2,在本申请的一种实施方式中,光源装置800包括背光面板810,背光面板810用于产生面光源。光源控制装置600包括硅基液晶面板610,硅基液晶面板610包括阵列电路层611和液晶层612。阵列电路层611包括呈阵列排布的开关器件,以及与开关器件连接的驱动电极。液晶层612设置于阵列电路层611的一侧;液晶层612包括液晶分子,液晶分子受对应的驱动电极的控制而发生角度变化,以控制背光面板810产生的光传输至对应的光激发部件130。FIG. 2 is a schematic structural diagram of another transfer device according to an embodiment of the present application. Referring to FIG. 2 , in an embodiment of the present application, the light source device 800 includes a backlight panel 810 for generating a surface light source. The light source control device 600 includes a liquid crystal on silicon panel 610 , and the liquid crystal on silicon panel 610 includes an array circuit layer 611 and a liquid crystal layer 612 . The array circuit layer 611 includes switching devices arranged in an array, and driving electrodes connected to the switching devices. The liquid crystal layer 612 is disposed on one side of the array circuit layer 611 ; the liquid crystal layer 612 includes liquid crystal molecules, and the liquid crystal molecules are controlled by the corresponding driving electrodes to change their angles, so as to control the light generated by the backlight panel 810 to transmit to the corresponding light excitation components 130 . .
液晶分子受与液晶分子对应的驱动电极的控制而发生角度变化。The liquid crystal molecules are controlled by the driving electrodes corresponding to the liquid crystal molecules to change their angles.
其中,硅基液晶面板610包括多个控制元(类似于显示面板中的像素),控制元是指开关器件,与开关器件对应的液晶分子,与开关器件连接的驱动电极。开关器件包括三极管或场效应管等半导体器件,例如,场效应管包括门极、源极和漏极。开关器件可以是单独设置的三极管或场效应管,也可以是半导体器件的组合,例如互补金属氧化物半导体(CMOS,Complementary Metal Oxide Semiconductor)等,在实际需求中可以根据需要进行设置。开关器件的制作形态可以为薄膜晶体管(TFT,Thin Film Transistor),以减薄阵列电路层611的厚度,减小转移设备的尺寸。示例性地,薄膜晶体管或场效应管阵列可以利用半导体制程直接在硅基液晶面板610的衬底上制作。The liquid crystal on silicon panel 610 includes a plurality of control elements (similar to pixels in a display panel), and the control elements refer to switching devices, liquid crystal molecules corresponding to the switching devices, and driving electrodes connected to the switching devices. The switching devices include semiconductor devices such as triodes or field effect transistors. For example, the field effect transistor includes a gate electrode, a source electrode and a drain electrode. The switching device can be a triode or a field effect transistor set independently, or a combination of semiconductor devices, such as complementary metal oxide semiconductor (CMOS, Complementary Metal Oxide Semiconductor), etc., which can be set according to actual needs. The fabrication form of the switching device can be a thin film transistor (TFT, Thin Film Transistor), so as to reduce the thickness of the array circuit layer 611 and reduce the size of the transfer device. Exemplarily, the thin film transistor or field effect transistor array can be directly fabricated on the substrate of the liquid crystal on silicon panel 610 by using a semiconductor process.
示例性地,当开关器件导通时,对应的驱动电极得电,从而控制对应的液晶分子偏转,光线通过或截止。一个控制元对应至少一个光激发部件130,或者至少一个控制元对应一个光激发部件130。背光面板810产生面光源照射在整个 硅基液晶面板610上,只有当控制元打开时,才能控制对应区域的光通过硅基液晶面板610射出,照射在对应光激发部件130上。背光面板810例如可以包括有机发光二极管、微发光二极管或二极管中的至少一种。在一实施例中,背光面板810还可以包括导光层等膜层,以使背光面板810均匀发光。本申请实施例通过设置光源装置800包括背光面板810,光源控制装置600包括硅基液晶面板610,结构简单,易于实现。Exemplarily, when the switching device is turned on, the corresponding driving electrode is energized, so as to control the deflection of the corresponding liquid crystal molecules, and the light passes through or is cut off. One control element corresponds to at least one optical excitation component 130 , or at least one control element corresponds to one optical excitation component 130 . The backlight panel 810 generates a surface light source to illuminate the entire liquid crystal on silicon panel 610. Only when the control element is turned on, can the light in the corresponding area be controlled to be emitted through the liquid crystal on silicon panel 610 and irradiate on the corresponding light excitation component 130. The backlight panel 810 may include at least one of organic light emitting diodes, micro light emitting diodes, or diodes, for example. In one embodiment, the backlight panel 810 may further include a film layer such as a light guide layer, so that the backlight panel 810 emits light uniformly. In the embodiment of the present application, by setting the light source device 800 to include a backlight panel 810 and the light source control device 600 to include a silicon-based liquid crystal panel 610, the structure is simple and easy to implement.
在上述实施例中,示例性地,硅基液晶面板610还可以包括盖板613、偏光片等结构,以提升硅基液晶面板610的稳定性,优化硅基液晶面板610的性能。In the above-mentioned embodiment, for example, the liquid crystal on silicon panel 610 may further include structures such as a cover plate 613 and a polarizer, so as to improve the stability of the liquid crystal on silicon panel 610 and optimize the performance of the liquid crystal on silicon panel 610 .
图3为本申请实施例提供的一种阵列电路层的结构示意图。参见图3,在本申请的一种实施方式中,阵列电路层611还包括门极选通模块614和源极选通模块615。门极选通模块614与开关器件连接;门极选通模块614用于逐行导通开关器件,或者用于同时导通至少部分行的开关器件。源极选通模块615与开关器件连接;源极选通模块615用于同时通过开关器件向至少部分列的驱动电极发送驱动信号,以驱动液晶分子偏转。FIG. 3 is a schematic structural diagram of an array circuit layer according to an embodiment of the present application. Referring to FIG. 3 , in an embodiment of the present application, the array circuit layer 611 further includes a gate gate module 614 and a source gate module 615 . The gate gating module 614 is connected to the switching devices; the gate gating module 614 is used to turn on the switching devices row by row, or to turn on the switching devices of at least part of the rows at the same time. The source gating module 615 is connected to the switching device; the source gating module 615 is used to simultaneously send a driving signal to the driving electrodes of at least part of the columns through the switching device, so as to drive the liquid crystal molecules to deflect.
图3所示,阵列电路层611包括呈阵列排布的开关器件6111。As shown in FIG. 3 , the array circuit layer 611 includes switching devices 6111 arranged in an array.
其中,门极选通模块614的驱动方式为逐行导通开关器件,还是同时导通至少部分行的开关器件,可以根据实际需要进行选择。源极选通模块615的驱动方式为同时通过开关器件向部分列的驱动电极发送驱动信号,还是向全部列的驱动电极发送驱动信号,可以根据实际需要进行选择。The driving mode of the gate gating module 614 is to turn on the switching devices row by row, or to simultaneously turn on the switching devices of at least part of the rows, which can be selected according to actual needs. The driving mode of the source gate module 615 is to send driving signals to the driving electrodes of some columns through the switching device at the same time, or to send driving signals to the driving electrodes of all columns, which can be selected according to actual needs.
示例性地,可以采用行/列扫描的方式对阵列电路层611进行扫描,此时,门极选通模块614逐行控制开关器件的导通和断开,同时,该时序下,对应列的驱动信号由源极选通模块615输出,连接对应开关器件的源极写入,从而驱动液晶分子偏转,激发光激发部件130执行打件动作,使对应的芯片110进行转移动作。例如,位于第一行第一列、第二行第二列、第三行第三列、第四行第四列、第五行第五列和第六行第六列的芯片110符合转移精度,当门极选通模块614扫描第一行开关器件时,源极选通模块615向第一列的开关器件写入驱动信号;当门极选通模块614扫描第二行开关器件时,源极选通模块615向第二列的开关器件写入驱动信号;……以此类推,直至门极选通模块614扫描至第六行开关器件,源极选通模块615向第六列的开关器件写入驱动信号。Exemplarily, the array circuit layer 611 may be scanned in a row/column scanning manner. At this time, the gate gating module 614 controls the on and off of the switching devices row by row. The driving signal is output by the source gate module 615 and connected to the source writing of the corresponding switching device, thereby driving the liquid crystal molecules to deflect, excites the light excitation component 130 to perform the stamping action, and causes the corresponding chip 110 to perform the transfer action. For example, the chips 110 located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth row and the sixth column meet the transfer accuracy, When the gate gating module 614 scans the switching devices in the first row, the source gating module 615 writes driving signals to the switching devices in the first column; when the gate gating module 614 scans the switching devices in the second row, the source The gating module 615 writes driving signals to the switching devices in the second column; . . . and so on, until the gate gating module 614 scans the switching devices in the sixth row, and the source gating module 615 scans the switching devices in the sixth column. Write the drive signal.
示例性地,还可以采用面扫描的方式对阵列电路层611进行扫描,此时,门极选通模块614同时控制多行开关器件的导通和断开,同时,该时序下,对应列的驱动信号由源极选通模块615输出,连接对应开关器件的源极写入,从 而驱动液晶分子偏转,激发光激发部件130执行打件动作,使对应的芯片110进行转移动作。例如,位于第一行的前三列、第二行的前三列、第三行的前三列和第四行的前三列的芯片110符合转移精度,门极选通模块614同时扫描前四行的开关器件,且源极选通模块615同时向前三列的开关器件写入驱动信号。Exemplarily, the array circuit layer 611 may also be scanned in a surface scanning manner. At this time, the gate gating module 614 simultaneously controls the on and off of multiple rows of switching devices. The driving signal is output by the source gate module 615 and connected to the source writing of the corresponding switching device, thereby driving the liquid crystal molecules to deflect, excites the light excitation component 130 to perform the stamping action, and causes the corresponding chip 110 to perform the transfer action. For example, the chips 110 located in the first three columns of the first row, the first three columns of the second row, the first three columns of the third row, and the first three columns of the fourth row meet the transfer accuracy, and the gate gating module 614 simultaneously scans before Four rows of switching devices, and the source gating module 615 simultaneously writes driving signals to the switching devices of the first three columns.
示例性地,门极选通模块614、源极选通模块615可选用TFT、CMOS等。Exemplarily, the gate gate module 614 and the source gate module 615 can be selected from TFT, CMOS, or the like.
本申请实施例采用主动式驱动阵列,可以实现行/列扫描或面扫描的扫描方式,使得扫描打件得以快速执行,提高了转移效率、稳定性,以及简化了操作难度。The embodiment of the present application adopts an active driving array, which can realize the scanning mode of row/column scanning or area scanning, so that the scanning and printing can be performed quickly, the transfer efficiency and stability are improved, and the operation difficulty is simplified.
需要说明的是,图3中示例性地示出了,行沿第一方向X延伸,列沿第二方向Y延伸,第一方向X和第二方向Y交叉。这并非对本申请的限定,在其他实施例中,还可以使行、列方向对调,例如,行沿第二方向Y延伸,列沿第一方向X延伸。It should be noted that, as exemplarily shown in FIG. 3 , the rows extend along the first direction X, the columns extend along the second direction Y, and the first direction X and the second direction Y intersect. This is not a limitation of the present application. In other embodiments, the row and column directions may also be reversed. For example, the row extends along the second direction Y, and the column extends along the first direction X.
图4为本申请实施例提供的又一种转移设备的结构示意图。参见图4,在本申请的一种实施方式中,光源装置800包括第一光源821和扩束模块822,第一光源821发出光源束,扩束模块822用于将光源束进行扩散而产生面光源;光源控制装置600包括数字微镜(DMD,Digital Micromirror Device)620,数字微镜620包括驱动阵列(图4中未示出)和呈阵列排布的反射镜621。驱动阵列包括呈阵列排布的开关器件。反射镜621与开关器件对应设置,示例性地,反射镜621与开关器件连接。反射镜621在驱动阵列的控制下角度可调,用于将光源装置800产生的光传输至对应的光激发部件130。FIG. 4 is a schematic structural diagram of another transfer device provided by an embodiment of the present application. Referring to FIG. 4 , in an embodiment of the present application, the light source device 800 includes a first light source 821 and a beam expander module 822 , the first light source 821 emits a light source beam, and the beam expander module 822 is used for diffusing the light source beam to generate a surface Light source; the light source control device 600 includes a digital micromirror (DMD, Digital Micromirror Device) 620, and the digital micromirror 620 includes a driving array (not shown in FIG. 4 ) and a reflecting mirror 621 arranged in an array. The driving array includes switching devices arranged in an array. The reflector 621 is disposed corresponding to the switching device, for example, the reflector 621 is connected to the switching device. The angle of the mirror 621 is adjustable under the control of the driving array, and is used to transmit the light generated by the light source device 800 to the corresponding light excitation component 130 .
其中,第一光源821可以产生激光光束,激光光束稳定性好,不易受环境影响,从而有利于提升转移背板的转移精度。在一实施例中,光源装置800包括准直模块,用于将面光源平行射出。数字微镜620中呈阵列排布的反射镜621例如可以采用微机电(MEMS,Micro Electro Mechanical System)反射镜或反射镜621由微机电控制,从而实现角度可调。通过调整反射镜621的角度,一方面可以调整照射至反射镜621上的光线是否反射到转移基板100上;另一方面可以调整照射至反射镜621上的光线具体照射到转移基板100的哪个光激发部件130上。因此,本申请实施例可以设置反射镜621与光激发部件130一一对应,也可以设置至少两个反射镜621与一个光激发部件130,还可以设置一个反射镜621对应至少两个光激发部件130,在实际应用中可以根据需要进行设定。Among them, the first light source 821 can generate a laser beam, and the laser beam has good stability and is not easily affected by the environment, thereby helping to improve the transfer accuracy of the transfer backplane. In one embodiment, the light source device 800 includes a collimation module for emitting the surface light source in parallel. For example, the mirrors 621 arranged in an array in the digital micromirror 620 can be controlled by a micro-electromechanical (MEMS, Micro Electro Mechanical System) mirror or the mirror 621 is controlled by a micro-electromechanical, so that the angle can be adjusted. By adjusting the angle of the mirror 621, on the one hand, it can be adjusted whether the light irradiated on the mirror 621 is reflected on the transfer substrate 100; on the excitation component 130. Therefore, in the embodiment of the present application, the mirrors 621 and the photoexcitation components 130 may be set in one-to-one correspondence, at least two mirrors 621 and one photoexcitation component 130 may be set, and one mirror 621 may be set to correspond to at least two photoexcitation components 130, which can be set as required in practical applications.
示例性地,若反射镜621与光激发部件130一一对应,则可以采用面扫描的方式对驱动阵列进行扫描。例如,位于第一行第一列、第二行第二列、第三 行第三列、第四行第四列、第五行第五列和第六行第六列的芯片110符合转移精度,对应的,调整位于第一行第一列、第二行第二列、第三行第三列、第四行第四列、第五行第五列和第六行第六列的反射镜621的角度,使得光线照射到对应的光激发部件130上,激发光激发部件130执行打件动作,使对应的芯片110进行转移动作。对于其他位置的反射镜621,通过调整其角度,使得光线不能反射出,或者光线反射到转移基板100外的其他区域。Exemplarily, if the mirrors 621 correspond to the optical excitation components 130 one-to-one, the driving array can be scanned in a surface scanning manner. For example, the chips 110 located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth row and the sixth column meet the transfer accuracy, Correspondingly, adjust the mirrors 621 located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth row and the sixth column. The angle is such that the light irradiates on the corresponding photoexcitation part 130 , and the photoexcitation part 130 is excited to perform a stamping action, so that the corresponding chip 110 performs a transfer action. For the mirrors 621 at other positions, by adjusting their angles, the light cannot be reflected, or the light is reflected to other areas outside the transfer substrate 100 .
示例性地,若一个反射镜621对应至少两个光激发部件130,则可以采用分时扫描的方式对驱动阵列进行扫描。例如,数字微镜620仅包括一个反射镜621,位于第一行第一列、第二行第二列、第三行第三列、第四行第四列、第五行第五列和第六行第六列的芯片110符合转移精度,在第一时段,调整反射镜621的角度,使光线照射至第一行第一列的光激发部件130;在第二时段,调整反射镜621的角度,使光线照射至第二行第二列的光激发部件130;……以此类推,直至扫描至第六行第六列。其中,第一时段和第二时段等扫描间隔时段需要满足光激发部件130的激发反应时间,以确保光激发部件130的可靠激发,芯片110的可靠转移。Exemplarily, if one mirror 621 corresponds to at least two optical excitation components 130, the driving array may be scanned in a time-division scanning manner. For example, the digital micromirror 620 includes only one mirror 621, which is located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth column. The chips 110 in the sixth row and the sixth column meet the transfer accuracy. In the first period, the angle of the mirror 621 is adjusted so that the light is irradiated to the photoexcitation components 130 in the first row and the first column; in the second period, the angle of the mirror 621 is adjusted. , so that the light is irradiated to the photoexcited components 130 in the second row and the second column; . . and so on, until the scanning reaches the sixth row and the sixth column. The scanning interval periods such as the first period and the second period need to satisfy the excitation reaction time of the photoexcitation component 130 to ensure reliable excitation of the photoexcitation component 130 and reliable transfer of the chip 110 .
示例性地,随着数字微镜620上设置反射镜621的数量增多,多个反射镜621可以同时工作,从而可以减少扫描打件的时间。Exemplarily, as the number of mirrors 621 provided on the digital micromirror 620 increases, multiple mirrors 621 can work at the same time, thereby reducing the time for scanning and printing parts.
本申请实施例设置光源装置800包括第一光源821和扩束模块822,光源控制装置600包括数字微镜(DMD)620,有利于实现对光激发部件130的面扫描,从而有利于提升转移效率。In this embodiment of the present application, the light source device 800 includes a first light source 821 and a beam expander module 822, and the light source control device 600 includes a digital micromirror (DMD) 620, which is beneficial to realize the surface scanning of the light excitation component 130, thereby helping to improve the transfer efficiency .
需要说明的是,在上述实施例中,示例性地示出了光源装置800通过扩束模块822产生面光源,并非对本申请的限定,在其他实施例中,还可以设置背光面板产生面光源,在实际应用中可以根据需要设定。It should be noted that, in the above embodiments, the light source device 800 is exemplarily shown to generate a surface light source through the beam expander module 822, which is not a limitation of the present application. In other embodiments, a backlight panel may also be set to generate a surface light source, In practical applications, it can be set as required.
示例性地,扩束模块822可为透镜系统。Illustratively, the beam expander module 822 may be a lens system.
图5为本申请实施例提供的又一种转移设备的结构示意图。参见图5,在本申请的一种实施方式中,光源装置800包括第二光源830,第二光源830发出光源束;光源控制装置600包括偏转器630,偏转器630用于将光源束扫描至对应的光激发部件130。其中,第二光源830可以产生激光光束,激光光束稳定性好,不易受环境影响,从而有利于提升转移背板的转移精度。优选地,偏转器630包括透镜模块631,透镜模块631位于光源束射出的光的光路上,透镜模块631用于调整光的角度。示例性地,偏转器630包括两个透镜模块631,一个透镜模块631可以水平转动,调整光的水平传播方向;另一个透镜模块631可以垂直 转动,调整光的垂直传播方向。FIG. 5 is a schematic structural diagram of another transfer device provided by an embodiment of the present application. Referring to FIG. 5 , in an embodiment of the present application, the light source device 800 includes a second light source 830, and the second light source 830 emits a light source beam; the light source control device 600 includes a deflector 630, which is used to scan the light source beam to Corresponding photoexcited components 130 . Among them, the second light source 830 can generate a laser beam, and the laser beam has good stability and is not easily affected by the environment, thereby helping to improve the transfer accuracy of the transfer backplane. Preferably, the deflector 630 includes a lens module 631, the lens module 631 is located on the optical path of the light emitted by the light source beam, and the lens module 631 is used to adjust the angle of the light. Exemplarily, the deflector 630 includes two lens modules 631, one lens module 631 can be rotated horizontally to adjust the horizontal propagation direction of light; the other lens module 631 can be rotated vertically to adjust the vertical propagation direction of light.
示例性地,可以采用分时扫描的方式进行扫描。例如,位于第一行第一列、第二行第二列、第三行第三列、第四行第四列、第五行第五列和第六行第六列的芯片110符合转移精度,在第一时段,调整偏转器630的角度,使光线照射至第一行第一列的光激发部件130;在第二时段,调整偏转器630的角度,使光线照射至第二行第二列的光激发部件130;……以此类推,直至扫描至第六行第六列。其中,第一时段和第二时段等扫描间隔时段需要满足光激发部件130的激发反应时间,以确保光激发部件130的可靠激发,芯片110的可靠转移。Exemplarily, scanning may be performed in a time-division scanning manner. For example, the chips 110 located in the first row, the first column, the second row, the second column, the third row, the third column, the fourth row, the fourth column, the fifth row, the fifth column, and the sixth row and the sixth column meet the transfer accuracy, In the first period, the angle of the deflector 630 is adjusted so that the light is irradiated to the photoexcitation elements 130 in the first row and the first column; in the second period, the angle of the deflector 630 is adjusted so that the light is irradiated on the second row and the second column and so on, until the scanning reaches the sixth row and sixth column. The scanning interval periods such as the first period and the second period need to satisfy the excitation reaction time of the photoexcitation component 130 to ensure reliable excitation of the photoexcitation component 130 and reliable transfer of the chip 110 .
需要说明的是,在上述实施例以偏转器630设置为透镜模块631为例进行说明,并非对本申请的限定,在其他实施例中,还可以将偏转器630设置为角度可调的反射镜(例如,MEMS反射镜),在实际应用中可以根据需要进行设定。It should be noted that in the above embodiments, the deflector 630 is set as the lens module 631 as an example for illustration, which is not a limitation of the present application. For example, MEMS mirrors), which can be set as needed in practical applications.
还需要说明的是,在上述各实施例中,第一光源和/或第二光源830可以是单色光发生器,也可以由多个单色光发生器和光合成器组成,在实际应用中可以根据需要进行设定。It should also be noted that, in the above embodiments, the first light source and/or the second light source 830 may be a monochromatic light generator, or may be composed of multiple monochromatic light generators and light combiners. In practical applications Can be set as required.
图6为本申请实施例提供的又一种转移设备的结构示意图。参见图6,在上述各实施例的基础上,转移设备还包括:光学测量装置400和数据处理装置500。光学测量装置400用于测量转移基板100或目标基板300包含的信息。数据处理装置500与光学测量装置连接,用于根据光学测量装置400测量的信息,确定转移基板100上需要转移的芯片110的数量和位置;以及,数据处理装置500还与光源控制装置600连接,以控制光源控制装置600,使得光源装置800发出的光传输至对应的光激发部件130上。FIG. 6 is a schematic structural diagram of another transfer device according to an embodiment of the present application. Referring to FIG. 6 , on the basis of the above embodiments, the transfer apparatus further includes: an optical measurement device 400 and a data processing device 500 . The optical measurement device 400 is used to measure the information contained in the transfer substrate 100 or the target substrate 300 . The data processing device 500 is connected with the optical measuring device, and is used for determining the number and position of the chips 110 to be transferred on the transfer substrate 100 according to the information measured by the optical measuring device 400; and the data processing device 500 is also connected with the light source control device 600, In order to control the light source control device 600 , the light emitted by the light source device 800 is transmitted to the corresponding light excitation component 130 .
其中,光学测量装置400例如可以是自动光学检测装置(AOI,Automated Optical Inspection),或者是X射线(X Ray)测量装置。测量的转移基板100的信息例如可以是转移基板100上的芯片110的位置、转移基板100上芯片110的形状、转移基板100上芯片110的裂纹、转移基板100上芯片110的方向、转移基板100上的对位标记位置、转移基板100上的对位标记形状、转移基板100上的对位标记方向等。测量的目标基板300的位置信息例如可以是目标基板300上的对位标记位置、目标基板300上的对位标记形状、目标基板300上的对位标记方向、目标基板300上的焊盘位置、目标基板300上的焊盘形状或目标基板300上的焊盘方向等。因此,光学测量装置400检测到的对位标记可以是一个对位点,也可以是对位点阵列。光学测量装置400检测的信息可以用来进 行对位,也可以用来确定芯片110是否满足对位要求。Wherein, the optical measurement device 400 may be, for example, an automatic optical inspection device (AOI, Automated Optical Inspection), or an X-ray (X Ray) measurement device. The measured information of the transfer substrate 100 may be, for example, the position of the chip 110 on the transfer substrate 100 , the shape of the chip 110 on the transfer substrate 100 , the crack of the chip 110 on the transfer substrate 100 , the orientation of the chip 110 on the transfer substrate 100 , the transfer substrate 100 The position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , the direction of the alignment mark on the transfer substrate 100 , and the like. The measured position information of the target substrate 300 may be, for example, the position of the alignment mark on the target substrate 300, the shape of the alignment mark on the target substrate 300, the direction of the alignment mark on the target substrate 300, the position of the pad on the target substrate 300, The shape of the pads on the target substrate 300, the direction of the pads on the target substrate 300, and the like. Therefore, the alignment mark detected by the optical measuring device 400 may be an alignment point or an alignment point array. The information detected by the optical measurement device 400 can be used to perform alignment, and can also be used to determine whether the chip 110 meets the alignment requirements.
数据处理装置500例如可以是微处理器、单片机或数字信号处理器(DSP,Digital Signal Processing)等具备数据处理功能的芯片。例如,数据处理装置500能够对转移基板100上芯片110的位置、转移基板100上的对位标记位置、转移基板100上的对位标记形状或转移基板100上的对位标记方向等位置信息进行处理和计算,能够得到转移基板100的位置,以及转移基板100上各芯片110的位置。以及,数据处理装置500能够对目标基板300上的对位标记位置、目标基板300上的对位标记形状、目标基板300上的对位标记方向、目标基板300上的焊盘位置、目标基板300上的焊盘形状或目标基板300上的焊盘方向等进行处理和计算,能够得到目标基板300的位置,以及目标基板300上各芯片110需要精确放置的位置。数据处理装置500能够对转移基板100上的芯片110形状或转移基板100上的芯片110裂纹等进行处理和计算,从而得到不良芯片110的数量和位置。数据处理装置500结合以上信息,确定转移基板100和目标基板300是否对位,以及确定各芯片110是否满足转移精度,从而确定转移基板100上需要转移的芯片110的数量和位置,进而以控制光源控制装置600,使得光源装置800发出的光传输至对应的光激发部件130上。The data processing device 500 may be, for example, a chip with a data processing function, such as a microprocessor, a single-chip microcomputer, or a digital signal processor (DSP, Digital Signal Processing). For example, the data processing apparatus 500 can process position information such as the position of the chip 110 on the transfer substrate 100 , the position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , or the direction of the alignment mark on the transfer substrate 100 . Through processing and calculation, the position of the transfer substrate 100 and the position of each chip 110 on the transfer substrate 100 can be obtained. And, the data processing device 500 can perform the alignment mark position on the target substrate 300 , the alignment mark shape on the target substrate 300 , the alignment mark direction on the target substrate 300 , the pad position on the target substrate 300 , and the target substrate 300 . By processing and calculating the shape of the pads on the target substrate 300 or the direction of the pads on the target substrate 300 , the position of the target substrate 300 and the precise placement of the chips 110 on the target substrate 300 can be obtained. The data processing device 500 can process and calculate the shape of the chips 110 on the transfer substrate 100 or the cracks of the chips 110 on the transfer substrate 100 , so as to obtain the number and position of the defective chips 110 . The data processing device 500 combines the above information to determine whether the transfer substrate 100 and the target substrate 300 are aligned, and determine whether each chip 110 meets the transfer accuracy, thereby determining the number and position of the chips 110 to be transferred on the transfer substrate 100, and then to control the light source The device 600 is controlled so that the light emitted by the light source device 800 is transmitted to the corresponding light excitation component 130 .
本申请实施例设置转移设备还包括光学测量装置和数据处理装置,对转移基板100和目标基板300进行测量,进一步提升了转移精度。The transfer apparatus provided in the embodiment of the present application further includes an optical measurement device and a data processing device, which measure the transfer substrate 100 and the target substrate 300, thereby further improving the transfer accuracy.
需要说明的是,在上述各实施例中,示例性地示出了采用光学检测装置400来检测目标基板300和转移基板100的位置,并非对本申请的限定。在其他实施例中,还可以不设置光学检测装置400,需要转移的芯片110的数量和位置还可以是预先存储的,或者,转移基板100上的芯片110已规律精准对位,在实际应用中可以根据需要选择是否设置光学检测装置。It should be noted that, in the above embodiments, the optical detection device 400 is exemplarily shown to detect the positions of the target substrate 300 and the transfer substrate 100 , which is not a limitation of the present application. In other embodiments, the optical detection device 400 may not be provided, and the number and position of the chips 110 to be transferred may also be pre-stored, or the chips 110 on the transfer substrate 100 have been regularly and accurately aligned. In practical applications Whether or not to install an optical detection device can be selected as required.
需要说明的是,在上述各实施例中,示例性地示出了,光激发部件130的排布密度与芯片110排布密度相同,即光激发部件130与芯片110一一对应,这并非对本申请的限定。在其他实施方式中,还可以设置光激发部件130的排布密度与芯片110的排布密度不同。例如,光激发部件130的排布密度为芯片110排布密度的n倍,n为2、3、4、5、10等正整数。It should be noted that, in the above-mentioned embodiments, it is exemplarily shown that the arrangement density of the light excitation components 130 is the same as the arrangement density of the chips 110, that is, the light excitation components 130 correspond to the chips 110 one-to-one. Application limitations. In other embodiments, the arrangement density of the light excitation components 130 may also be set to be different from the arrangement density of the chips 110 . For example, the arrangement density of the optical excitation components 130 is n times the arrangement density of the chips 110 , and n is a positive integer such as 2, 3, 4, 5, 10, etc.
图7为本申请实施例提供的一种转移基板的结构示意图,图8为沿图7中A-A的剖面结构示意图。参见图7和图8,在上述各实施例的基础上,在一实施例中,光激发部件130在光的作用下,由固态或液态变为气态。转移基板100还包括:至少一个过孔101,过孔101位于转移基板100的中部、边缘或中部与 边缘之间的区域,过孔101形成负压气体通路,负压气体通路用于排出产生的气体,以避免光激发部件130激发出的气体(爆炸气体)能量过大而对芯片110造成损坏。FIG. 7 is a schematic structural diagram of a transfer substrate according to an embodiment of the present application, and FIG. 8 is a cross-sectional structural schematic diagram along A-A in FIG. 7 . Referring to FIG. 7 and FIG. 8 , on the basis of the above embodiments, in one embodiment, the optical excitation component 130 changes from a solid state or a liquid state to a gas state under the action of light. The transfer substrate 100 further includes: at least one via hole 101, the via hole 101 is located in the middle, the edge, or the area between the middle and the edge of the transfer substrate 100, the via hole 101 forms a negative pressure gas passage, and the negative pressure gas passage is used to discharge the generated gas. gas, so as to avoid excessive energy of the gas (explosive gas) excited by the light excitation component 130 and cause damage to the chip 110 .
在本申请的一种实施方式中,光激发部件130中混合有中和部件,中和部件用于中和气体中的有害物质,或中和部件在光激发下产生中和气体,以中和有害物质。其中,有害物质例如可以是有毒性或呈酸、碱性的物质。中和部件例如可以是活性炭。中和部件产生的中和气体与有害物质对应,若有害物质呈酸性,对应的中和气体呈碱性;若有害物质呈碱性,对应的中和气体呈酸性。In an embodiment of the present application, a neutralizing component is mixed in the optical excitation component 130, and the neutralizing component is used to neutralize harmful substances in the gas, or the neutralizing component generates a neutralizing gas under optical excitation to neutralize harmful materials. Among them, the harmful substances may be, for example, toxic or acidic or alkaline substances. The neutralizing member can be activated carbon, for example. The neutralizing gas produced by the neutralizing component corresponds to the harmful substance. If the harmful substance is acidic, the corresponding neutralizing gas is alkaline; if the harmful substance is alkaline, the corresponding neutralizing gas is acidic.
图9为本申请实施例提供的另一种转移基板100的结构示意图。参见图9,在本申请的一种实施方式中,转移设备还包括执行膜140,执行膜140设置于光激发部件130远离转移基板100的一侧。执行膜140的材质例如可以是柔性材质,具有较高拉伸断裂比的材料。这样,在光激发部件130受激发产生气体后,执行膜140的形变大于转移基板100的形变,进而使得芯片110与执行膜140分离。执行膜140的设置,可以使得光激发部件130受激发产生的气体膨胀不会直接作用在芯片110上,而是通过执行膜140作用到待转移芯片110上,起到了缓冲和均匀应力的作用,提高了转移精度。并且,执行膜140的设置,可以减少光激发部件130产生的气体与待转移芯片110的接触,进而避免激发部120受激发产生的气体对待转移芯片110的腐蚀等损害。FIG. 9 is a schematic structural diagram of another transfer substrate 100 according to an embodiment of the present application. Referring to FIG. 9 , in an embodiment of the present application, the transfer apparatus further includes an execution film 140 , and the execution film 140 is disposed on a side of the light excitation component 130 away from the transfer substrate 100 . The material of the execution film 140 can be, for example, a flexible material, a material with a higher tensile rupture ratio. In this way, after the optical excitation component 130 is excited to generate gas, the deformation of the execution film 140 is greater than the deformation of the transfer substrate 100 , so that the chip 110 is separated from the execution film 140 . The setting of the execution film 140 can make the gas expansion generated by the excited light excitation component 130 not directly act on the chip 110, but act on the to-be-transferred chip 110 through the execution film 140, which plays the role of buffering and uniform stress, Improved transfer accuracy. In addition, the arrangement of the film 140 can reduce the contact between the gas generated by the optical excitation component 130 and the to-be-transferred chip 110 , thereby avoiding damages such as corrosion of the to-be-transferred chip 110 by the gas generated by the excited part 120 .
在上述各实施例的基础上,在一实施例中,转移设备还包括辅助触发部件,辅助触发部件例如可以是磁力触发部件等能够对转移基板100上的待转移的芯片110提供额外作用力的触发部件,以对芯片110的转移提供辅助作用。On the basis of the above-mentioned embodiments, in one embodiment, the transfer apparatus further includes an auxiliary triggering component, and the auxiliary triggering component may be, for example, a magnetic triggering component that can provide additional force to the chips 110 to be transferred on the transfer substrate 100 . Trigger components to assist in the transfer of the chip 110 .
在上述各实施例中,在一实施例中,目标基板300为另一个转移基板、背光驱动背板或显示驱动背板。其中,若目标基板300为另一个转移基板,可以重复多次芯片转移的动作,且每进行一次转移,芯片110的精度更高。这样,每次转移动作可以有更多数量的芯片110满足转移精度,从而有利于提升转移效率。目标基板300例如可以为玻璃基板或石英基板等,有利于提升目标基板300的尺寸稳定性、热稳定性和化学稳定性,从而提升转移精度。In the above embodiments, in one embodiment, the target substrate 300 is another transfer substrate, a backlight driving backplane or a display driving backplane. Wherein, if the target substrate 300 is another transfer substrate, the chip transfer operation can be repeated multiple times, and the precision of the chip 110 is higher each time the transfer is performed. In this way, a larger number of chips 110 can meet the transfer precision in each transfer operation, which is beneficial to improve the transfer efficiency. The target substrate 300 can be, for example, a glass substrate or a quartz substrate, etc., which is beneficial to improve the dimensional stability, thermal stability and chemical stability of the target substrate 300 , thereby improving the transfer accuracy.
若目标基板300为背光驱动背板,此时,芯片110为背光芯片,在将芯片110全部转移到背光驱动背板之后,还需要采用热压、UV固化和回流焊等方式将芯片110与背光驱动背板上的焊盘焊接,以形成显示装置中的背光源。若目标基板300为显示驱动背板,此时,芯片110为显示芯片,在将芯片110全部转移到显示驱动背板之后,还需要采用热压、UV固化和回流焊等方式将芯片 110与显示驱动背板上的焊盘焊接,以形成显示装置中的像素。其中,背光驱动背板或显示驱动背板等驱动背板上设置有驱动线路,当转移基板100与驱动背板进行对位转移时,转移基板100和驱动背板还可以起到支撑、保护芯片,保护驱动背板上的线路的作用。驱动背板例如可以采用聚酰亚胺(PI,Polyimide)、聚碳酸酯(PC,Polycarbonate)或聚对苯二甲酸乙二醇酯(PET,polyethylene glycol terephthalate)等柔性材料做衬底,以实现柔性显示。驱动背板中的电路膜层可以采用有机薄膜晶体管(OTFT,Organic Thin Film Transistor)或有机场效应管(OMOS,Organic MOS)等。驱动背板可以为玻璃基板或石英基板上刻有驱动线路、或者为柔性印刷电路板(FPC,Flexible Printed Circuit)、印刷电路板(PCB,Printed Circuit Board)等。If the target substrate 300 is a backlight driving backplane, at this time, the chip 110 is a backlight chip. After all the chips 110 are transferred to the backlight driving backplane, it is necessary to use hot pressing, UV curing and reflow soldering to connect the chip 110 to the backlight. The pads on the drive backplane are soldered to form a backlight source in a display device. If the target substrate 300 is a display driver backplane, at this time, the chip 110 is a display chip. After all the chips 110 are transferred to the display driver backplane, the chip 110 needs to be connected to the display driver by hot pressing, UV curing, and reflow soldering. The pads on the drive backplane are soldered to form the pixels in the display device. Among them, a driving circuit such as a backlight driving backplane or a display driving backplane is provided with a driving circuit. When the transfer substrate 100 and the driving backplane are aligned and transferred, the transfer substrate 100 and the driving backplane can also support and protect the chip. , to protect the function of the lines on the drive backplane. For example, the drive backplane can use flexible materials such as polyimide (PI, Polyimide), polycarbonate (PC, Polycarbonate) or polyethylene terephthalate (PET, polyethylene glycol terephthalate) as a substrate to achieve Flexible display. The circuit film layer in the driving backplane can be an organic thin film transistor (OTFT, Organic Thin Film Transistor) or an organic field effect transistor (OMOS, Organic MOS). The driving backplane can be a glass substrate or a quartz substrate with driving lines engraved on it, or a flexible printed circuit board (FPC, Flexible Printed Circuit), a printed circuit board (PCB, Printed Circuit Board), and the like.
在本申请的一种实施方式中,转移设备还包括运动装置,运动装置用于驱动转移基板100运动,以使转移基板100与目标基板300进行对位。示例性地,只需通过运动装置调整转移基板100的位置即可。本申请实施例设置只对转移基板100进行位移对位,有利于降低转移设备的制作成本。In an embodiment of the present application, the transfer apparatus further includes a moving device, and the moving device is used to drive the transfer substrate 100 to move, so that the transfer substrate 100 and the target substrate 300 are aligned. Exemplarily, it is only necessary to adjust the position of the transfer substrate 100 through the moving device. In the embodiment of the present application, only the transfer substrate 100 is set to be displaced and aligned, which is beneficial to reduce the manufacturing cost of the transfer device.
在本申请的一种实施方式中,转移设备包括运动装置,运动装置用于控制转移基板100和目标基板300进行位移。其中,运动装置例如可以是机械臂等能够控制基板进行位移的装置。示例性地,运动装置能够驱动转移基板100与目标基板300在位移过程中进行对位。例如,通过计算运动提前量来进行动态打件,从而有利于进一步提升转移精度。In an embodiment of the present application, the transfer apparatus includes a movement device, and the movement device is used to control the displacement of the transfer substrate 100 and the target substrate 300 . The motion device may be, for example, a device capable of controlling the displacement of the substrate, such as a robot arm. Exemplarily, the motion device can drive the transfer substrate 100 and the target substrate 300 to perform alignment during the displacement process. For example, dynamic punching is performed by calculating the motion advance, which is beneficial to further improve the transfer accuracy.
综上所述,本申请实施例通过在转移基板100上设置光激发部件130,并在转移设备中设置光源装置800和光源控制装置600,以激发对应的光激发部件130受到激发而产生推力,从而使得对应的芯片110从转移基板100分离。这样设置,可以在一次转移的过程中,仅转移满足转移精度的芯片110,其他不满足转移精度的芯片110可以经过再次对位进行转移。与相关技术中的大批量转移技术相比,本申请实施例实现了对待转移的芯片110的准确控制和转移,从而提高了转移精度和转移良率。在一实施例中,光源装置800可以是背光面板,光源控制装置600可以是硅基液晶面板,以实现行/列扫描或者面扫描,从而提升了大批量转移的效率。在一实施例中,光源装置800可以包括产生光源束的第一光源和扩束模块,光源控制装置600可以是数字微镜,以实现行/列扫描或者面扫描,从而提升了大批量转移的效率。在一实施例中,光源装置800可以包括产生光源束的第二光源,光源控制装置600可以是偏转器,以实现行/列扫描。在一实施例中,通过设置光学测量装置400,可以提升对位精度,从而进一 步提升了转移精度。To sum up, in the embodiment of the present application, the light excitation component 130 is arranged on the transfer substrate 100, and the light source device 800 and the light source control device 600 are arranged in the transfer equipment, so as to excite the corresponding light excitation component 130 to be excited to generate thrust, Thereby, the corresponding chips 110 are separated from the transfer substrate 100 . In this way, in the process of one transfer, only the chips 110 that meet the transfer accuracy can be transferred, and the other chips 110 that do not meet the transfer accuracy can be transferred again through alignment. Compared with the mass transfer technology in the related art, the embodiment of the present application achieves accurate control and transfer of the chips 110 to be transferred, thereby improving the transfer precision and transfer yield. In one embodiment, the light source device 800 may be a backlight panel, and the light source control device 600 may be a liquid crystal on silicon panel to implement row/column scanning or area scanning, thereby improving the efficiency of mass transfer. In one embodiment, the light source device 800 may include a first light source for generating a light source beam and a beam expander module, and the light source control device 600 may be a digital micromirror to realize row/column scanning or area scanning, thereby improving the efficiency of mass transfer. efficiency. In one embodiment, the light source device 800 may include a second light source that generates a light source beam, and the light source control device 600 may be a deflector to enable row/column scanning. In one embodiment, by arranging the optical measuring device 400, the alignment accuracy can be improved, thereby further improving the transfer accuracy.
本申请实施例提供了一种转移方法,可以采用本申请任意实施例所提供的转移设备进行芯片的大批量转移。图10为本申请实施例提供的一种转移方法的流程示意图,图11为本申请实施例提供的一种转移方法中的每个步骤对应的转移设备的结构示意图。参见图10和图11,转移方法包括以下步骤:The embodiment of the present application provides a transfer method, and the transfer device provided by any embodiment of the present application can be used to perform mass transfer of chips. FIG. 10 is a schematic flowchart of a transfer method provided by an embodiment of the present application, and FIG. 11 is a schematic structural diagram of a transfer device corresponding to each step in the transfer method provided by an embodiment of the present application. 10 and 11, the transfer method includes the following steps:
S110、提供目标基板300。S110 , providing the target substrate 300 .
其中,目标基板300又可以称作目标承载板,即芯片110的转移目标位置是目标基板300上的位置。The target substrate 300 may also be referred to as a target carrier board, that is, the transfer target position of the chip 110 is a position on the target substrate 300 .
S120、提供转移基板100,将转移基板100与目标基板300对位;转移基板100上设置有呈阵列排布的光激发部件130,光激发部件130远离转移基板100的一侧设置有待转移的芯片110。S120, providing a transfer substrate 100, and aligning the transfer substrate 100 with the target substrate 300; the transfer substrate 100 is provided with photoexcitation components 130 arranged in an array, and the photoexcitation components 130 are provided with chips to be transferred on the side away from the transfer substrate 100 110.
其中,转移基板100又可以称作过渡承载板或临时承载板,用于按照待转移的芯片尺寸对芯片110进行预先排列。一般而言,转移基板100上所放置的芯片110的位置和方向可以是不精确的,甚至是杂乱无章的。在其他实施例中,转移基板100上的芯片110已规律精准对位,需要转移的芯片110的数量和位置可以是预先存储。The transfer substrate 100 may also be called a transition carrier board or a temporary carrier board, and is used to pre-arrange the chips 110 according to the size of the chips to be transferred. Generally speaking, the positions and orientations of the chips 110 placed on the transfer substrate 100 may be imprecise or even chaotic. In other embodiments, the chips 110 on the transfer substrate 100 are regularly and precisely aligned, and the number and position of the chips 110 to be transferred may be stored in advance.
光激发部件130是指在特定光照的作用下受到激发,而发生物理和/或化学变化的部件。示例性地,光激发部件130在光的作用下由固态或液态变为气态,从而产生气体膨胀,将芯片110由转移基板100转移(打件)至目标基板300,光激发部件130的主体材料例如可以包括乙醚或氧化剂等材料;特定光照包括激光、可见光或非可见光(例如UV光)中的至少一种,对应的,光源装置800包括激光发生器、可见光发生器或非可见发生器中的至少一种。The photo-excited component 130 refers to a component that undergoes physical and/or chemical changes when excited under the action of specific light. Exemplarily, the photo-excited component 130 changes from a solid state or a liquid state to a gaseous state under the action of light, so as to generate gas expansion, and the chip 110 is transferred (printed) from the transfer substrate 100 to the target substrate 300 , and the main material of the photo-excited component 130 is For example, materials such as ether or oxidant may be included; the specific light includes at least one of laser light, visible light or invisible light (eg UV light), and correspondingly, the light source device 800 includes a laser generator, a visible light generator or an invisible light generator. at least one.
在一实施例中,转移基板100与目标基板300在位移过程中进行对位。例如,通过计算运动提前量来进行动态打件,从而有利于进一步提升转移精度。In one embodiment, the transfer substrate 100 and the target substrate 300 are aligned during the displacement process. For example, dynamic punching is performed by calculating the motion advance, which is beneficial to further improve the transfer accuracy.
S130、提供光源装置800和光源控制装置600,将光源控制装置600放置于光源装置800产生的光路上。S130 , providing a light source device 800 and a light source control device 600 , and placing the light source control device 600 on the light path generated by the light source device 800 .
其中,光源装置800和光源控制装置600配合能够实现对光信号的控制,从而激发相应的光激发部件130。在一实施例中,光源装置800可以是背光面板,光源控制装置600可以是硅基液晶面板,以实现行/列扫描或者面扫描,从而提升了大批量转移的效率。在一实施例中,光源装置800可以包括产生光源束的第一光源和扩束模块,光源控制装置600可以是数字微镜,以实现行/列扫描或者面扫描,从而提升了大批量转移的效率。在一实施例中,光源装置800可以 包括产生光源束的第二光源,光源控制装置600可以是偏转器,以实现行/列扫描。The light source device 800 and the light source control device 600 cooperate to realize the control of the light signal, so as to excite the corresponding light excitation component 130 . In one embodiment, the light source device 800 may be a backlight panel, and the light source control device 600 may be a liquid crystal on silicon panel to implement row/column scanning or area scanning, thereby improving the efficiency of mass transfer. In one embodiment, the light source device 800 may include a first light source for generating a light source beam and a beam expander module, and the light source control device 600 may be a digital micromirror to realize row/column scanning or area scanning, thereby improving the efficiency of mass transfer. efficiency. In one embodiment, the light source device 800 may include a second light source that generates a light source beam, and the light source control device 600 may be a deflector to enable row/column scanning.
S140、控制光源控制装置600,将光源装置800产生的光照射至对应的光激发部件130上,以使转移基板100上的至少部分芯片110转移至目标基板300上。S140 , controlling the light source control device 600 to irradiate the light generated by the light source device 800 to the corresponding light excitation component 130 , so as to transfer at least part of the chips 110 on the transfer substrate 100 to the target substrate 300 .
其中,将光源装置800产生的光对光激发部件130的扫描方式有多种,例如,控制光源装置800产生面光源;驱动光源控制装置600对满足转移精度的芯片110进行面扫描。或者,例如,控制光源装置800产生光源束;驱动光源控制装置600对满足转移精度的芯片110进行单点扫描。There are various ways to scan the light excitation component 130 with the light generated by the light source device 800 , for example, controlling the light source device 800 to generate a surface light source; Or, for example, the light source device 800 is controlled to generate a light source beam; the light source control device 600 is driven to perform single-point scanning on the chip 110 that satisfies the transfer accuracy.
至少部分是指部分或者全部,若待转移的芯片110全部满足转移精度,那么被转移至目标基板300的芯片数量为全部数量;若待转移的芯片110中只有部分满足转移精度,那么被转移至目标基板300的芯片数量为部分数量。在一实施例中,确定转移基板100上的芯片位置是否满足转移要求的方法是:将转移基板100上的芯片位置和目标基板300上的预设位置或芯片焊脚的位置进行比较(例如作差),判断两位置是否完全重叠或部分重叠,若完全重叠,则满足转移要求;若部分重叠,则将重叠最小区域与设定阈值进行比较,确定是否在满足阈值要求。At least part means part or all. If all the chips 110 to be transferred meet the transfer accuracy, then the number of chips transferred to the target substrate 300 is the full number; if only part of the chips 110 to be transferred meet the transfer accuracy, then the chips are transferred to The number of chips of the target substrate 300 is the number of parts. In one embodiment, the method for determining whether the position of the chip on the transfer substrate 100 meets the transfer requirement is to compare the position of the chip on the transfer substrate 100 with a preset position on the target substrate 300 or the position of the chip pads (for example, making a Poor), judge whether the two positions overlap completely or partially, if they overlap completely, the transfer requirements are met; if they overlap partially, compare the minimum overlapping area with the set threshold to determine whether the threshold requirements are met.
图11中示例性地示出了全部芯片110满足转移精度,将全部芯片110转移到目标基板300上。在其他实施例中,还可以设置转移基板100上只有部分芯片110满足转移精度,通过对应的光激发部件130,将满足转移精度的这些芯片110进行转移,完成第一次打件动作。然后,将转移基板100与目标基板300再次对位,以使剩余的至少部分芯片110能够满足对位精度。以此类推,直至将剩余的全部芯片110进行转移。FIG. 11 exemplarily shows that all the chips 110 satisfy the transfer accuracy, and all the chips 110 are transferred to the target substrate 300 . In other embodiments, only some of the chips 110 on the transfer substrate 100 can meet the transfer accuracy, and the chips 110 that meet the transfer accuracy are transferred by the corresponding optical excitation components 130 to complete the first stamping action. Then, the transfer substrate 100 and the target substrate 300 are aligned again, so that the remaining at least part of the chips 110 can satisfy the alignment accuracy. And so on, until all the remaining chips 110 are transferred.
由上述步骤可以看出,本申请实施例通过采用光源装置800和光源控制装置600激发转移基板100上对应的光激发部件130,以进行打件动作,使得对应的芯片110从转移基板100分离。这样设置,可以在一次转移的过程中,仅转移满足转移精度的芯片110,其他不满足转移精度的芯片110可以经过再次对位进行转移。与相关技术中的大批量转移技术相比,本申请实施例实现了对待转移的芯片110的准确控制和转移,从而提高了转移精度和转移良率。It can be seen from the above steps that in this embodiment of the present application, the light source device 800 and the light source control device 600 are used to excite the corresponding light excitation components 130 on the transfer substrate 100 to perform a stamping operation, so that the corresponding chips 110 are separated from the transfer substrate 100 . In this way, in the process of one transfer, only the chips 110 that meet the transfer accuracy can be transferred, and the other chips 110 that do not meet the transfer accuracy can be transferred again through alignment. Compared with the mass transfer technology in the related art, the embodiment of the present application achieves accurate control and transfer of the chips 110 to be transferred, thereby improving the transfer precision and transfer yield.
在上述各实施例中,示例性地,转移方法还包括以下步骤:In the above embodiments, exemplary, the transfer method further includes the following steps:
首先,采用光学测量装置对转移基板100和目标基板300的位置进行测量,得到转移信息。First, the positions of the transfer substrate 100 and the target substrate 300 are measured using an optical measuring device to obtain transfer information.
其中,光学测量装置400例如可以是自动光学检测装置(AOI),或者是X射线(X Ray)测量装置。测量的转移基板100的信息例如可以是转移基板100上的芯片110的位置、转移基板100上芯片110的形状、转移基板100上芯片110的裂纹、转移基板100上芯片110的方向、转移基板100上的对位标记位置、转移基板100上的对位标记形状、转移基板100上的对位标记方向等。测量的目标基板300的位置信息例如可以是目标基板300上的对位标记位置、目标基板300上的对位标记形状、目标基板300上的对位标记方向、目标基板300上的焊盘位置、目标基板300上的焊盘形状或目标基板300上的焊盘方向等。因此,光学测量装置400检测到的对位标记可以是一个对位点,也可以是对位点阵列。光学测量装置400检测的信息可以用来进行对位,也可以用来确定芯片110是否满足对位要求。The optical measuring device 400 may be, for example, an automatic optical inspection device (AOI), or an X-ray (X-ray) measuring device. The measured information of the transfer substrate 100 may be, for example, the position of the chip 110 on the transfer substrate 100 , the shape of the chip 110 on the transfer substrate 100 , the crack of the chip 110 on the transfer substrate 100 , the orientation of the chip 110 on the transfer substrate 100 , the transfer substrate 100 The position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , the direction of the alignment mark on the transfer substrate 100 , and the like. The measured position information of the target substrate 300 may be, for example, the position of the alignment mark on the target substrate 300, the shape of the alignment mark on the target substrate 300, the direction of the alignment mark on the target substrate 300, the position of the pad on the target substrate 300, The shape of the pads on the target substrate 300 or the direction of the pads on the target substrate 300, and the like. Therefore, the alignment mark detected by the optical measuring device 400 may be an alignment point or an alignment point array. The information detected by the optical measurement device 400 can be used to perform alignment, and can also be used to determine whether the chip 110 meets the alignment requirements.
然后,数据处理装置根据转移信息进行处理,确定转移基板100上的芯片110位置是否满足转移精度,得到数量信息和位置信息;光源控制装置600根据数量信息和位置信息,调整光源装置800产生的光线的路径。Then, the data processing device performs processing according to the transfer information, determines whether the position of the chip 110 on the transfer substrate 100 meets the transfer accuracy, and obtains quantity information and position information; the light source control device 600 adjusts the light generated by the light source device 800 according to the quantity information and the position information path of.
其中,数据处理装置500例如可以是微处理器、单片机或数字信号处理器(DSP)等具备数据处理功能的芯片。例如,数据处理装置500能够对转移基板100上芯片110的位置、转移基板100上的对位标记位置、转移基板100上的对位标记形状或转移基板100上的对位标记方向等位置信息进行处理和计算,能够得到转移基板100的位置,以及转移基板100上各芯片110的位置。以及,数据处理装置500能够对目标基板300上的对位标记位置、目标基板300上的对位标记形状、目标基板300上的对位标记方向、目标基板300上的焊盘位置、目标基板300上的焊盘形状或目标基板300上的焊盘方向等进行处理和计算,能够得到目标基板300的位置,以及目标基板300上各芯片110需要精确放置的位置。数据处理装置500能够对转移基板100上的芯片110形状或转移基板100上的芯片110裂纹等进行处理和计算,从而得到不良芯片110的数量和位置。数据处理装置500结合以上信息,确定转移基板100和目标基板300是否对位,以及确定各芯片110是否满足转移精度,从而确定转移基板100上需要转移的芯片110的数量和位置,进而以控制光源控制装置600,使得光源装置800发出的光传输至对应的光激发部件130上。The data processing device 500 may be, for example, a chip with a data processing function, such as a microprocessor, a single-chip microcomputer, or a digital signal processor (DSP). For example, the data processing apparatus 500 can process position information such as the position of the chip 110 on the transfer substrate 100 , the position of the alignment mark on the transfer substrate 100 , the shape of the alignment mark on the transfer substrate 100 , or the direction of the alignment mark on the transfer substrate 100 . Through processing and calculation, the position of the transfer substrate 100 and the position of each chip 110 on the transfer substrate 100 can be obtained. And, the data processing device 500 can perform the alignment mark position on the target substrate 300 , the alignment mark shape on the target substrate 300 , the alignment mark direction on the target substrate 300 , the pad position on the target substrate 300 , and the target substrate 300 . By processing and calculating the shape of the pads on the target substrate 300 or the direction of the pads on the target substrate 300 , the position of the target substrate 300 and the precise placement of the chips 110 on the target substrate 300 can be obtained. The data processing device 500 can process and calculate the shape of the chips 110 on the transfer substrate 100 or the cracks of the chips 110 on the transfer substrate 100 , so as to obtain the number and position of the defective chips 110 . The data processing device 500 combines the above information to determine whether the transfer substrate 100 and the target substrate 300 are aligned, and determine whether each chip 110 meets the transfer accuracy, thereby determining the number and position of the chips 110 to be transferred on the transfer substrate 100, and then to control the light source The device 600 is controlled so that the light emitted by the light source device 800 is transmitted to the corresponding light excitation component 130 .
本申请实施例设置转移设备还包括光学测量装置和数据处理装置,对转移基板100和目标基板300进行测量,进一步提升了转移精度。The transfer apparatus provided in the embodiment of the present application further includes an optical measurement device and a data processing device, which measure the transfer substrate 100 and the target substrate 300, thereby further improving the transfer accuracy.
本申请实施例还提供了一种显示装置,该显示装置可以是装配有Mini LED 背光源的LCD显示装置、装配有Micro LED背光源的LCD显示装置、Mini LED显示装置或Micro LED显示装置。显示装置包括:驱动背板和设置于驱动背板上的显示芯片(例如,Mini LED芯片或Micro LED芯片),其中,显示芯片采用如本申请任意实施例所提供的转移方法转移至驱动背板上。The embodiment of the present application also provides a display device, which can be an LCD display device equipped with a Mini LED backlight, an LCD display device equipped with a Micro LED backlight, a Mini LED display device or a Micro LED display device. The display device includes: a driving backplane and a display chip (for example, a Mini LED chip or a Micro LED chip) disposed on the driving backplane, wherein the display chip is transferred to the driving backplane using the transfer method provided in any embodiment of the present application superior.
其中,驱动背板例如可以采用聚酰亚胺(PI)、聚碳酸酯(PC)或聚对苯二甲酸乙二醇酯(PET)等柔性材料做衬底,以实现柔性显示。驱动背板中的电路膜层可以采用有机薄膜晶体管(OTFT)或有机场效应管(OMOS)等。驱动背板可以为玻璃基板或石英基板上刻有驱动线路、或者为柔性印刷电路板(FPC)、印刷电路板(PCB)等。Wherein, the driving backplane may use flexible materials such as polyimide (PI), polycarbonate (PC), or polyethylene terephthalate (PET) as a substrate to realize flexible display. The circuit film layer in the driving backplane can be an organic thin film transistor (OTFT) or an organic field effect transistor (OMOS). The driving backplane may be a glass substrate or a quartz substrate with driving lines engraved on it, or a flexible printed circuit board (FPC), a printed circuit board (PCB), or the like.
本申请实施例提供一种转移设备、转移方法和显示装置,以提高大批量转移的精度和良率。Embodiments of the present application provide a transfer apparatus, a transfer method, and a display device, so as to improve the precision and yield of mass transfer.
本申请实施例还提供了一种显示装置,包括:驱动背板和设置于所述驱动背板上的待转移的部件,其中,所述待转移的部件采用如本申请任意实施例所述转移方法转移至所述驱动背板上。An embodiment of the present application further provides a display device, comprising: a driving backplane and a component to be transferred disposed on the driving backplane, wherein the component to be transferred is transferred as described in any embodiment of the present application The method is transferred to the drive backplane.
本领域技术人员会理解,本申请不限于这里所述的特定实施例,对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本申请的保护范围。因此,虽然通过以上实施例对本申请进行了较为详细的说明,但是本申请不仅仅限于以上实施例,在不脱离本发明构思的情况下,还可以包括更多其他等效实施例,而本申请的范围由所附的权利要求范围决定。Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present application. Therefore, although the present application has been described in detail through the above embodiments, the present application is not limited to the above embodiments, and may also include more other equivalent embodiments without departing from the concept of the present invention. The scope is determined by the scope of the appended claims.

Claims (16)

  1. 一种转移设备,包括:A transfer device comprising:
    转移基板(100),所述转移基板(100)上设置有呈阵列排布的光激发部件(130),所述光激发部件(130)远离所述转移基板(100)的一侧用于放置待转移的部件;A transfer substrate (100), the transfer substrate (100) is provided with optical excitation components (130) arranged in an array, and the side of the optical excitation components (130) away from the transfer substrate (100) is used for placing parts to be transferred;
    光源装置(800),用于产生激发所述光激发部件(130)的光;a light source device (800) for generating light to excite the light excitation component (130);
    光源控制装置(600),位于所述光源装置(800)产生的光的光路上,所述光源控制装置(600)用于将所述光源装置(800)产生的光照射至对应的所述光激发部件(130)上,以使所述转移基板(100)上的至少部分待转移的部件转移至目标基板(300)。A light source control device (600), located on the optical path of the light generated by the light source device (800), the light source control device (600) is configured to irradiate the light generated by the light source device (800) to the corresponding light The parts (130) are excited, so that at least part of the parts to be transferred on the transfer substrate (100) are transferred to the target substrate (300).
  2. 根据权利要求1所述的转移设备,其中,所述光源装置(800)包括背光面板(810),所述背光面板(810)用于产生面光源;所述光源控制装置(600)包括硅基液晶面板(610),所述硅基液晶面板(610)包括:The transfer apparatus according to claim 1, wherein the light source device (800) comprises a backlight panel (810) for generating a surface light source; the light source control device (600) comprises a silicon-based A liquid crystal panel (610), the liquid crystal on silicon panel (610) comprising:
    阵列电路层(611),包括呈阵列排布的开关器件,以及与所述开关器件连接的驱动电极;an array circuit layer (611), comprising switching devices arranged in an array, and driving electrodes connected to the switching devices;
    液晶层(612),设置于所述阵列电路层(611)的一侧;所述液晶层(612)包括液晶分子,所述液晶分子受对应的所述驱动电极的控制而发生角度变化,以控制所述背光面板(810)产生的光传输至对应的所述光激发部件(130)。The liquid crystal layer (612) is disposed on one side of the array circuit layer (611); the liquid crystal layer (612) includes liquid crystal molecules, and the liquid crystal molecules are controlled by the corresponding driving electrodes to change in angle, so as to The light generated by the backlight panel (810) is controlled to be transmitted to the corresponding light excitation component (130).
  3. 根据权利要求2所述的转移设备,其中,所述阵列电路层(611)还包括:The transfer apparatus of claim 2, wherein the array circuit layer (611) further comprises:
    门极选通模块(614),与所述开关器件连接;所述门极选通模块(614)用于逐行导通所述开关器件,或者用于同时导通至少部分行的所述开关器件;a gate gating module (614), connected to the switching device; the gate gating module (614) is configured to turn on the switching device row by row, or simultaneously turn on the switches of at least part of the row device;
    源极选通模块(615),与所述开关器件连接;所述源极选通模块(615)用于同时通过所述开关器件向至少部分列的所述驱动电极发送驱动信号,以驱动所述液晶分子偏转;A source gating module (615) is connected to the switching device; the source gating module (615) is configured to simultaneously send a driving signal to the driving electrodes of at least part of the columns through the switching device, so as to drive all the The liquid crystal molecules are deflected;
    其中,所述行沿第一方向延伸,所述列沿第二方向延伸;或者,所述行沿所述第二方向延伸,所述列沿所述第一方向延伸;所述第一方向和所述第二方向交叉。Wherein, the row extends along a first direction, and the column extends along a second direction; or, the row extends along the second direction, and the column extends along the first direction; the first direction and The second direction intersects.
  4. 根据权利要求1所述的转移设备,其中,所述光源装置(800)包括第一光源(821)和扩束模块(822),所述第一光源(821)发出光源束,所述扩束模块(822)用于将所述光源束进行扩散而产生面光源;所述光源控制装置(600)包括数字微镜(620),所述数字微镜(620)包括:The transfer apparatus according to claim 1, wherein the light source device (800) comprises a first light source (821) and a beam expanding module (822), the first light source (821) emitting a light source beam, the beam expanding The module (822) is used for diffusing the light source beam to generate a surface light source; the light source control device (600) includes a digital micromirror (620), and the digital micromirror (620) includes:
    驱动阵列,包括呈阵列排布的开关器件;a drive array, including switching devices arranged in an array;
    呈阵列排布的反射镜(621),所述反射镜(621)与所述开关器件对应设置;所 述反射镜(621)在所述驱动阵列的控制下角度可调,用于将所述光源装置(800)产生的光传输至对应的所述光激发部件(130)。Reflecting mirrors (621) arranged in an array, the reflecting mirrors (621) are arranged corresponding to the switching devices; the angle of the reflecting mirrors (621) is adjustable under the control of the driving array, and is used to convert the The light generated by the light source device (800) is transmitted to the corresponding light excitation component (130).
  5. 根据权利要求1所述的转移设备,其中,所述光源装置(800)包括第二光源(830),所述第二光源(830)发出光源束;所述光源控制装置(600)包括偏转器(630),所述偏转器(630)用于将所述光源束扫描至对应的所述光激发部件(130)。The transfer apparatus according to claim 1, wherein the light source device (800) comprises a second light source (830) which emits a light source beam; the light source control device (600) comprises a deflector (630), the deflector (630) is used to scan the light source beam to the corresponding light excitation component (130).
  6. 根据权利要求5所述的转移设备,其中,所述偏转器(630)包括透镜模块(631),所述透镜模块(631)位于所述光源束射出的光的光路上,所述透镜模块(631)用于调整所述光的角度。The transfer apparatus according to claim 5, wherein the deflector (630) comprises a lens module (631) located on the optical path of the light emitted by the light source beam, the lens module (631) 631) for adjusting the angle of the light.
  7. 根据权利要求1所述的转移设备,还包括:The transfer device of claim 1, further comprising:
    光学测量装置(400),用于测量所述转移基板(100)或所述目标基板(300)包含的信息;an optical measurement device (400) for measuring information contained in the transfer substrate (100) or the target substrate (300);
    数据处理装置(500),与所述光学测量装置(400)连接;所述数据处理装置(500)用于根据所述信息,确定所述转移基板(100)上需要转移的部件的数量和位置;A data processing device (500), connected to the optical measuring device (400); the data processing device (500) is configured to determine the quantity and position of the components to be transferred on the transfer substrate (100) according to the information ;
    所述数据处理装置(500)还与所述光源控制装置(600)连接,以控制所述光源控制装置(600),使得所述光源装置(800)发出的光传输至对应的所述光激发部件(130)上。The data processing device (500) is further connected with the light source control device (600) to control the light source control device (600), so that the light emitted by the light source device (800) is transmitted to the corresponding light excitation device component (130).
  8. 根据权利要求1所述的转移设备,其中,所述光源装置(800)包括激光发生器、可见光发生器或非可见发生器中的至少一种。The transfer apparatus of claim 1, wherein the light source device (800) comprises at least one of a laser generator, a visible light generator, or a non-visible generator.
  9. 根据权利要求1所述的转移设备,其中,至少一个所述光激发部件(130)对应一个所述待转移的部件。The transfer apparatus of claim 1, wherein at least one of the photo-excited components (130) corresponds to one of the components to be transferred.
  10. 根据权利要求1所述的转移设备,其中,所述光激发部件(130)在光的作用下,由固态或液态变为气态;The transfer device according to claim 1, wherein the optical excitation component (130) changes from a solid state or a liquid state to a gas state under the action of light;
    所述转移基板(100)还包括:至少一个过孔(101),每个所述过孔(101)位于所述转移基板(100)的中部、边缘或中部与边缘之间的区域,所述至少一个过孔(101)形成负压气体通路,所述负压气体通路用于排出产生的气体;The transfer substrate (100) further comprises: at least one via hole (101), each of the via holes (101) is located in the middle, the edge or the region between the middle and the edge of the transfer substrate (100), the At least one via hole (101) forms a negative pressure gas passage, and the negative pressure gas passage is used to discharge the generated gas;
    或者,所述光激发部件(130)中混合有中和部件,所述中和部件用于中和气体中的有害物质,或所述中和部件在光激发下产生中和气体,以中和有害物质。Alternatively, a neutralizing component is mixed in the optical excitation component (130), and the neutralizing component is used to neutralize harmful substances in the gas, or the neutralizing component generates a neutralizing gas under optical excitation to neutralize harmful materials.
  11. 根据权利要求1所述的转移设备,还包括:执行膜(140),所述执行膜(140)设置于所述光激发部件(130)远离所述转移基板(100)的一侧。The transfer apparatus according to claim 1, further comprising: an execution film (140), the execution film (140) being disposed on a side of the light excitation component (130) away from the transfer substrate (100).
  12. 一种转移方法,包括:A transfer method comprising:
    提供目标基板(300);providing a target substrate (300);
    提供转移基板(100),将所述转移基板(100)与所述目标基板(300)对位;所述转移基板(100)上设置有呈阵列排布的光激发部件(130),所述光激发部件(130)远离所述转移基板(100)的一侧设置有待转移的部件;A transfer substrate (100) is provided, and the transfer substrate (100) is aligned with the target substrate (300); the transfer substrate (100) is provided with optical excitation components (130) arranged in an array, the A part to be transferred is provided on a side of the light excitation component (130) away from the transfer substrate (100);
    提供光源装置(800)和光源控制装置(600),将所述光源控制装置(600)放置于所述光源装置(800)产生的光路上;A light source device (800) and a light source control device (600) are provided, and the light source control device (600) is placed on the light path generated by the light source device (800);
    控制所述光源控制装置(600),将所述光源装置(800)产生的光照射至对应的所述光激发部件(130)上,以使所述转移基板(100)上的至少部分所述待转移的部件转移至目标基板(300)上;其中,被转移的所述部件满足转移精度。The light source control device (600) is controlled to irradiate the light generated by the light source device (800) to the corresponding light excitation component (130), so that at least part of the light source on the transfer substrate (100) is irradiated The part to be transferred is transferred onto the target substrate (300); wherein the part to be transferred satisfies the transfer accuracy.
  13. 根据权利要求12所述的转移方法,其中,所述控制所述光源控制装置(600),将所述光源装置(800)产生的光照射至对应的所述光激发部件(130)上,包括:The transfer method according to claim 12, wherein the controlling the light source control device (600) to irradiate the light generated by the light source device (800) to the corresponding light excitation component (130) comprises: :
    控制所述光源装置(800)产生面光源;驱动所述光源控制装置(600)对满足转移精度的所述待转移的部件进行面扫描;controlling the light source device (800) to generate a surface light source; driving the light source control device (600) to perform surface scanning on the part to be transferred that meets the transfer accuracy;
    或者,控制所述光源装置(800)产生光源束;驱动所述光源控制装置(600)对满足转移精度的所述待转移的部件进行单点扫描。Alternatively, the light source device (800) is controlled to generate a light source beam; the light source control device (600) is driven to perform single-point scanning on the part to be transferred that meets the transfer accuracy.
  14. 根据权利要求12所述的转移方法,其中,所述控制所述光源控制装置(600),将所述光源装置(800)产生的光照射至对应的所述光激发部件(130)上,包括:The transfer method according to claim 12, wherein the controlling the light source control device (600) to irradiate the light generated by the light source device (800) to the corresponding light excitation component (130) comprises: :
    采用光学测量装置(400)对所述转移基板(100)和所述目标基板(300)的位置进行测量,得到转移信息;Using an optical measuring device (400) to measure the positions of the transfer substrate (100) and the target substrate (300) to obtain transfer information;
    数据处理装置(500)根据所述转移信息进行处理,确定所述转移基板(100)上的待转移的部件位置是否满足转移精度,得到数量信息和位置信息;The data processing device (500) performs processing according to the transfer information, determines whether the position of the component to be transferred on the transfer substrate (100) meets the transfer accuracy, and obtains quantity information and position information;
    所述光源控制装置(600)根据所述数量信息和所述位置信息,调整所述光源装置(800)产生的光线的路径;The light source control device (600) adjusts the path of the light generated by the light source device (800) according to the quantity information and the position information;
    或者,所述控制所述光源控制装置(600),将所述光源装置(800)产生的光照射至对应的所述光激发部件(130)上,包括:Alternatively, the controlling the light source control device (600) to irradiate the light generated by the light source device (800) to the corresponding light excitation component (130) includes:
    获取预先存储的需要转移的所述待转移的部件的数量信息和位置信息;Acquiring pre-stored quantity information and location information of the components to be transferred that need to be transferred;
    所述光源控制装置(600)根据所述数量信息和所述位置信息,调整所述光源装置(800)产生的光线的路径。The light source control device (600) adjusts the path of the light generated by the light source device (800) according to the quantity information and the position information.
  15. 根据权利要求14所述的转移方法,其中,所述转移信息包括以下至少一种:The transfer method according to claim 14, wherein the transfer information includes at least one of the following:
    所述转移基板(100)上的待转移的部件的位置、所述转移基板(100)上的待转 移的部件形状、所述转移基板(100)上的待转移的部件裂纹、所述转移基板(100)上的待转移的部件方向、所述转移基板(100)上的对位标记位置、所述转移基板(100)上的对位标记形状、所述转移基板(100)上的对位标记方向;所述目标基板(300)上的对位标记位置、所述目标基板(300)上的对位标记形状、所述目标基板(300)上的对位标记方向、所述目标基板(300)上的焊盘位置、所述目标基板(300)上的焊盘形状和所述目标基板(300)上的焊盘方向。The position of the part to be transferred on the transfer substrate (100), the shape of the part to be transferred on the transfer substrate (100), the crack of the part to be transferred on the transfer substrate (100), the transfer substrate The orientation of the component to be transferred on the (100), the position of the alignment mark on the transfer substrate (100), the shape of the alignment mark on the transfer substrate (100), the alignment on the transfer substrate (100) mark direction; the position of the alignment mark on the target substrate (300), the shape of the alignment mark on the target substrate (300), the direction of the alignment mark on the target substrate (300), the target substrate ( 300), the shape of the pads on the target substrate (300), and the direction of the pads on the target substrate (300).
  16. 一种显示装置,包括:驱动背板和设置于所述驱动背板上的显示芯片,其中,所述显示芯片采用如权利要求12-15任一项所述转移方法转移至所述驱动背板上。A display device, comprising: a driving backplane and a display chip disposed on the driving backplane, wherein the display chip is transferred to the driving backplane using the transfer method according to any one of claims 12-15 superior.
PCT/CN2022/075592 2021-02-09 2022-02-09 Transfer device, transfer method, and display apparatus WO2022171103A1 (en)

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CN112820672A (en) * 2021-02-09 2021-05-18 南昌广恒电子中心(有限合伙) Transfer apparatus, transfer method, and display device
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