WO2022161687A1 - Mosfet protection - Google Patents

Mosfet protection Download PDF

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Publication number
WO2022161687A1
WO2022161687A1 PCT/EP2021/085476 EP2021085476W WO2022161687A1 WO 2022161687 A1 WO2022161687 A1 WO 2022161687A1 EP 2021085476 W EP2021085476 W EP 2021085476W WO 2022161687 A1 WO2022161687 A1 WO 2022161687A1
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WO
WIPO (PCT)
Prior art keywords
mosfet transistor
transistor
resistor
mosfet
control device
Prior art date
Application number
PCT/EP2021/085476
Other languages
French (fr)
Inventor
Lucien LECURIEUX-BELFOND
Original Assignee
Valeo Systemes Thermiques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo Systemes Thermiques filed Critical Valeo Systemes Thermiques
Publication of WO2022161687A1 publication Critical patent/WO2022161687A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/008—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for protective arrangements according to this subclass
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance

Definitions

  • the technical context of the present invention is that of protection against reverse currents. More particularly, the invention relates to an electronic device for controlling an electric motor, in particular of the type used in motor vehicle ventilation assemblies. The invention also relates to a motor-driven fan assembly for a motor vehicle, driven by such an engine power circuit.
  • the electronic control device is an electronic module necessary to control an electromagnetic element, such as for example an electric motor, by varying its speed.
  • This electronic control device inserted between the battery and the electromagnetic element, comprises electronic components sensitive to disturbances in the electrical network of the battery and the electromagnetic component that it controls.
  • the disturbances encountered can be voltage fluctuations and even reverse voltages.
  • the electromagnetic element can be found in a generator configuration and then deliver a current to the rest of the circuit.
  • the electronic device controlling the electromagnetic element includes a MOSFET transistor to block the current when it is reversed, thus ensuring the protection of the rest of the circuit.
  • MOSFET is the English acronym for "Metal Oxide Semiconductor Field Effect Transistor" and means Insulated Gate Field Effect Transistor. Disclosure of Invention
  • the subject of the invention is an electronic device for controlling an electromagnetic element, the electronic device comprising: a supply battery, a control circuit, a power circuit driving the electromagnetic element and a MOSFET transistor for protection against polarity inversions, characterized in that the electronic device comprises a protection device for said MOSFET transistor, said MOSFET transistor comprising a drain, a gate and a source.
  • the protection device comprises a first resistor, a second resistor and a transistor, said transistor comprising a base, a collector and an emitter.
  • the second resistor makes it possible to control the opening speed of the MOSFET transistor and the first resistor makes it possible to protect the base-emitter junction of the transistor of the voltage overload protection device Vds of the MOSFET transistor for protection against polarity inversions.
  • the MOSFET transistor for protection against polarity inversions is of the N type. It is dimensioned to allow the current necessary for the proper functioning of the electromagnetic element to pass.
  • the transistor of the protection device is of the NPN bipolar transistor type.
  • the first resistance of the protection device is positioned between the base of the bipolar transistor and the drain of the MOSFET transistor. This first resistor makes it possible to ensure the detection of the Vds and the protection of the base-emitter junction of the bipolar voltage overload transistor Vds of the MOSFET transistor.
  • the second resistor of the protection device is positioned between the collector of the bipolar transistor and the gate of the MOSFET transistor. This second resistor is used to control the opening of the MOSFET transistor.
  • the collector of the bipolar transistor is connected to the gate of the MOSFET transistor via the second resistor, the emitter of said bipolar transistor being connected to the source of the MOSFET transistor and the base of said bipolar transistor being connected to the drain of the MOSFET transistor via the first resistor.
  • This bipolar transistor has the function of opening the power circuit by forcing the control voltage of the gate of the MOSFET transistor to 0V in order to protect the MOSFET transistor from any overloads.
  • a third resistor is positioned between the gate of the MOSFET transistor for protection against polarity inversions, via the second resistor and the output of the control circuit which drives the MOSFET transistor for protection against polarity reversals.
  • the third resistor is used to drive the MOSFET transistor for protection against polarity inversions, via the second resistor and to limit the piloting current of the control circuit when the transistor is conductive up to a voltage of 0V between the gate and the source of the MOSFET transistor which will have the effect of opening the MOSFET transistor.
  • the drain of the MOSFET transistor is connected to the negative terminal of the battery
  • the source of the MOSFET transistor is connected to the negative terminal of the power circuit
  • a fourth resistor is connected to the terminal negative of the power circuit and to the gate of the MOSFET transistor.
  • the fourth resistor is used to fix a potential of 0V between the gate and the source of the MOSFET transistor for protection against polarity inversions when it is not requested and in this case the MOSFET transistor will be locked in the open position.
  • the drain of the MOSFET transistor is connected to the positive terminal of the power circuit
  • the source of the MOSFET transistor is connected to the positive terminal of the battery
  • a fourth resistor is connected, via the second resistance to the gate of the MOSFET transistor and the positive terminal of the battery.
  • the drain of the MOSFET transistor is connected to the negative terminal of the battery
  • the source of the MOSFET transistor is connected to the negative terminal of the power circuit
  • a fourth resistor is placed between the gate and the source of the MOSFET transistor.
  • the drain of the MOSFET transistor is connected to the positive terminal of the power circuit
  • the source of the MOSFET transistor is connected to the positive terminal of the battery
  • a fourth resistor is positioned between the gate and the source of the MOSFET transistor.
  • the bipolar transistor is of the NPN type having a gain P or even HFE of between 1 and 100,000, preferably 250.
  • the bipolar transistor has an IC collector current of between 1mA and 100A, preferably 500mA.
  • the first resistor has a value between IQ and 1 MQ, preferably 1KQ.
  • the second resistor has a value between IQ and 5M, preferably 15K.
  • the MOSFET transistor for protection against polarity inversions has an RDSON of between 0.5mQ and I 00Q.
  • the acronym RDSon comes from the expression Resistance Drain Source ON, ON meaning activation in English and designating the mode in which the MOSFET transistor is closed.
  • the fourth resistor has a value between 1KQ and 500KQ, preferably 47KQ.
  • the third resistor has a value between IQ and 100KQ, preferably 2.2KQ.
  • the electromagnetic element is a brushed or brushless DC motor of the “Brushless” type or any other type of load capable of generating a voltage higher than the voltage of the supply battery.
  • the battery delivers a voltage between 0V and 100V, preferably a nominal voltage of 12V which can vary from 0 to 16V and in the event of polarity inversion respectively from 0V to -100V and preferably from OV to -16V.
  • Another subject of the invention is a fan-motor unit for a motor vehicle, said fan-motor unit comprising: a fan driven in rotation by an electric motor; and an electronic control device for driving the electric motor, equipped with said MOSFET protection device for protection against polarity inversions.
  • FIG 1 schematically represents an electronic electrical control device according to the state of the art.
  • FIG 2 schematically represents an electronic electrical control device with the MOSFET protection device according to a first embodiment of the invention.
  • FIG 3 schematically represents an electronic electrical control device with the MOSFET protection device according to a second embodiment of the invention.
  • FIG 4 schematically represents an electronic electrical control device with the MOSFET protection device according to a third embodiment of the invention.
  • FIG 5 schematically represents an electronic electrical control device with the MOSFET protection device according to a fourth embodiment of the invention.
  • FIG 6 represents a first example of a magnetic element controlled by the electronic electrical control device of one of Figures 2 to 5, the magnetic element here being a brushless electric motor of the three-phase “brushless” type.
  • FIG 7 represents a second example of a magnetic element controlled by the electronic electrical control device of one of Figures 2 to 5, the magnetic element here being a brushless electric motor of the polyphase “brushless” type.
  • FIG 8 represents a third example of a magnetic element controlled by the electronic electrical control device of one of Figures 2 to 5, the magnetic element here being a DC electric motor with brushes.
  • FIG. 1 represents an electronic device for the electrical control of an electromagnetic element comprising a MOSFET transistor M1 for protection against polarity inversions, this transistor being in this figure unprotected.
  • FIG. 2 it represents an electronic device 100 for controlling an electromagnetic element 200 according to the present invention, the electronic device 100 comprising: a supply battery V 1 , a control circuit 4, a power circuit 2 driving the electromagnetic element 200 and a MOSFET transistor M1 for protection against polarity inversions, characterized in that the electronic device 100 also comprises a device protection 3 of said MOSFET transistor M1, said MOSFET transistor M1 comprising a drain, a gate and a source.
  • the MOSFET transistor M1 for protection against polarity inversions can be seen, to a first approximation, as a controlled switch.
  • a control signal that it receives on its gate it is closed when the polarity of the battery is in the right direction and it is open when the polarity of the battery is reversed.
  • the protection device 3 comprises a first resistor R1, a second resistor R2 and a transistor Q1, said transistor Q1 comprising a base, a collector and an emitter.
  • the second resistor R2 makes it possible to control the opening speed of the MOSFET transistor Ml and the first resistor RI makes it possible to protect the base-emitter junction of the transistor Ql from voltage overload Vds of the MOSFET transistor Ml for protection against polarity reversals.
  • the MOSFET transistor M1 for protection against polarity inversions is of the N type. It is dimensioned to allow the current necessary for the proper functioning of the electromagnetic element 200 to pass.
  • Transistor Q1 is of the NPN bipolar transistor type.
  • the protection device 3 of the MOSFET transistor M1 detects an abnormal voltage at the terminals of the N-channel MOSFET transistor M1 either when the driving voltage of the MOSFET transistor M1 decreases below a nominal threshold of 0.6V and varying by 0.2V and IV as a function of the temperature and of the bipolar transistor Q1 used, or else when a reverse current passes through the MOSFET transistor M1, or even both at the same time. If such an abnormal voltage across the terminals of the MOSFET M1 is detected, the device short-circuits the voltage Vgs of the MOSFET transistor M1 by a rapid but controlled opening of said MOSFET transistor M1 thanks to the second resistor R2.
  • the MOSFET M1 By monitoring both the voltage and the current, by means of the protection device 3 of the present invention, the MOSFET M1 is protected from overload which could cause its destruction.
  • the voltage variations at the terminals of the MOSFET transistor M1 are the result of its internal resistance. Its internal resistance increases with temperature as well as with the decrease in its control voltage, which means that the device will react sooner with the increase in temperature. In addition, the detection threshold also decreases with temperature, which guarantees that the system will not run away.
  • the transistor QI is a bipolar transistor which is used to detect a positive voltage Vds between the drain and the source of the MOSFET transistor M1.
  • This voltage turns on the bipolar transistor Q1 as soon as the voltage Vbe between the base and the emitter of the bipolar transistor Q1 crosses a voltage threshold which allows the passage of a current Ib in the base of the bipolar transistor Q1.
  • This voltage is the result of the mathematical product of a current flowing from the drain to the source of the MOSFET transistor M1 Id multiplied by the value of the on-state resistance RDSon of the MOSFET transistor M1.
  • Vbe RDSon x Id
  • the RDSon of the MOSFET increases rapidly when its gate driving voltage decreases below a certain threshold.
  • the voltage between the drain and the source of the MOSFET transistor M1 therefore also increases when the voltage between its gate and its source Vgs decreases.
  • the first resistance RI of the protection device 3 is positioned between the base of the bipolar transistor Ql and the drain of the MOSFET transistor ML This first resistance RI makes it possible to ensure the detection of the Vds and the protection of the base-emitter junction of the bipolar transistor Ql of voltage overload Vds of the MOSFET transistor ML
  • the second resistor R2 of the protection device 3 is positioned between the collector of the bipolar transistor Ql and the gate of the MOSFET transistor ML This second resistor R2 makes it possible to control the opening of the MOSFET transistor ML
  • bipolar transistor Ql The collector of bipolar transistor Ql is connected to the gate of MOSFET transistor Ml via second resistor R2, the emitter of said bipolar transistor Ql being connected to the source of MOSFET transistor Ml and the base of said bipolar transistor Ql being connected to the drain of transistor MOSFET M1 via first resistor RL
  • the function of this bipolar transistor Q1 is to open power circuit 2 by forcing the control voltage of the gate of MOSFET transistor M1 to 0V in order to protect MOSFET transistor M1 from any overloads.
  • a third resistor R4 is positioned between the gate of the MOSFET transistor M1 for protection against polarity reversals, via the second resistor R2 and the output F of the control circuit 4 which drives the MOSFET transistor M1 for protection against polarity reversals.
  • the third resistor R4 is used to drive the MOSFET transistor M1 for protection against polarity reversals, via the second resistor R2 and to limit the driving current of the control circuit 4 when the transistor Q1 is conductive up to a voltage of 0V between the gate and the source of the MOSFET transistor M1 which will have the effect of opening the MOSFET transistor M1.
  • the bipolar transistor Q1 is of the NPN type having a gain P or else HFE of between 1 and 100000, preferably 250.
  • Bipolar transistor Q1 has a collector current IC of between 1mA and 100A, preferably 500mA.
  • the first resistor RI has a value between IQ and 1MQ, preferably 1KQ.
  • the second resistor R2 has a value between 1Q and 5MQ, preferably 15KQ.
  • the MOSFET transistor M1 for protection against polarity inversions has an RDSon of between 0.5mf2 and 100 ⁇ .
  • the fourth resistor R3 has a value between 1KQ and 500KQ, preferably 47KQ.
  • the third resistor R4 has a value between IQ and 100KQ, preferably 2.2KQ.
  • the electromagnetic element 200 is a brushed or brushless DC motor of the “Brushless” type or any other type of load that can generate a voltage higher than the voltage of the supply battery V 1.
  • the battery VI delivers a voltage between 0V and 100V, preferably a nominal voltage of 12V which can vary from 0 to 16V and in the event of polarity inversion respectively from 0V to -100V and preferably from 0V to -16V.
  • the drain of MOSFET transistor M1 is connected to the negative terminal of battery VI
  • the source of MOSFET transistor M1 is connected to the negative terminal of power circuit 2
  • a fourth resistor R3 is connected to the negative terminal of the power circuit 2 and to the gate of the MOSFET transistor ML
  • the fourth resistor R3 is used to fix a potential of 0V between the gate and the source of the MOSFET transistor Ml for protection against polarity reversals when it is not requested and in this case the MOSFET transistor Ml will be locked in the open position.
  • the drain of MOSFET transistor M1 is connected to the positive terminal of power circuit 2
  • the source of MOSFET transistor M1 is connected to the positive terminal of battery VI
  • a fourth resistor R3 is connected via second resistor R2 to the gate of MOSFET transistor M1 and to the positive terminal of battery VI.
  • the drain of MOSFET transistor M1 is connected to the negative terminal of battery VI, the source of MOSFET transistor M1 is connected to the negative terminal of power circuit 2, a fourth resistor R3 is placed between the gate and the source of the MOSFET transistor M1.
  • the MOSFET transistor M1 for protection against polarity inversions has its drain connected to the positive terminal of the power circuit 2 and its source connected to the positive terminal of the battery VI, as well as a fourth resistor R3 positioned between the gate and the source of the MOSFET transistor M1 for protection against polarity inversions.
  • Another subject of the invention is a motor-driven fan unit 5 for a motor vehicle, said motor-driven fan unit 5 comprising: a fan 6 driven in rotation by an electric motor; and an electronic control device 100 for controlling the electric motor, equipped with said protection device 3 of the MOSFET M1 for protection against polarity inversions.
  • the invention cannot however be limited to the means and configurations exclusively described and illustrated, and also applies to all means or configurations, equivalents and to any combination of such means or configurations.

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  • Protection Of Static Devices (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

The invention relates to an electronic device for controlling an electromagnetic part, the electronic device comprising: - a power battery, - a control circuit, - a power circuit driving the electromagnetic part, and - a MOSFET for protection against polarity reversals, characterized in that the electronic device comprises a device for protecting the MOSFET.

Description

DESCRIPTION DESCRIPTION
TITRE : PROTECTION DE MOSFET TITLE: MOSFET PROTECTION
Domaine technique Technical area
Le contexte technique de la présente invention est celui de la protection contre les courants inverses. Plus particulièrement, l’invention a trait à un dispositif électronique de commande d’un moteur électrique, notamment du type de ceux utilisés dans des ensembles de ventilation de véhicule automobile. L’invention concerne aussi un groupe moto-ventilateur pour véhicule automobile, piloté par un tel circuit de puissance moteur. The technical context of the present invention is that of protection against reverse currents. More particularly, the invention relates to an electronic device for controlling an electric motor, in particular of the type used in motor vehicle ventilation assemblies. The invention also relates to a motor-driven fan assembly for a motor vehicle, driven by such an engine power circuit.
Technique antérieure Prior technique
Le dispositif électronique de commande est un module électronique nécessaire pour contrôler un élément électromagnétique, tel que par exemple un moteur électrique, en faisant varier sa vitesse. Ce dispositif électronique de commande, intercalé entre la batterie et l’élément électromagnétique, comporte des composants électroniques sensibles aux perturbations du réseau électrique de la batterie et du composant électromagnétique qu’il pilote. Les perturbations rencontrées peuvent être des fluctuations de tensions et même des tensions inverses. En effet, dans certains cas, l’élément électromagnétique peut se retrouver dans une configuration de génératrice et alors délivrer un courant vers le reste du circuit. Afin de prévenir tout dommage, le dispositif électronique de commande de l’élément électromagnétique comprend un transistor MOSFET visant à bloquer le courant lorsque celui-ci est inversé, assurant ainsi la protection du reste du circuit. Cependant, sous certaines conditions de baisse de tension de grille (gate en anglais), donc d'augmentation de la résistance RDSon dû à la baisse de la tension de batterie, ce transistor MOSFET peut être amené à recevoir un courant renvoyé sur la batterie, l’amenant à développer une forte dissipation d’énergie pouvant amener la destruction du composant. MOSFET est l’acronyme anglais pour « Metal Oxide Semiconductor Field Effect Transistor » et signifiant transistor à effet de champ à grille isolée. Exposé de l’invention The electronic control device is an electronic module necessary to control an electromagnetic element, such as for example an electric motor, by varying its speed. This electronic control device, inserted between the battery and the electromagnetic element, comprises electronic components sensitive to disturbances in the electrical network of the battery and the electromagnetic component that it controls. The disturbances encountered can be voltage fluctuations and even reverse voltages. Indeed, in some cases, the electromagnetic element can be found in a generator configuration and then deliver a current to the rest of the circuit. In order to prevent any damage, the electronic device controlling the electromagnetic element includes a MOSFET transistor to block the current when it is reversed, thus ensuring the protection of the rest of the circuit. However, under certain conditions of drop in gate voltage (gate in English), therefore of increase in the RD Son resistance due to the drop in the battery voltage, this MOSFET transistor may be caused to receive a current sent back to the battery, causing it to develop a strong dissipation of energy which can lead to the destruction of the component. MOSFET is the English acronym for "Metal Oxide Semiconductor Field Effect Transistor" and means Insulated Gate Field Effect Transistor. Disclosure of Invention
Afin de remédier à ce problème, l’invention a pour objet un dispositif électronique de commande d’un élément électromagnétique, le dispositif électronique comprenant : une batterie d’ alimentation, un circuit de contrôle, un circuit de puissance pilotant l’élément électromagnétique et un transistor MOSFET de protection contre les inversions de polarité, caractérisé en ce que le dispositif électronique comprend un dispositif de protection dudit transistor MOSFET, ledit transistor MOSFET comprenant un drain, une grille et une source. In order to remedy this problem, the subject of the invention is an electronic device for controlling an electromagnetic element, the electronic device comprising: a supply battery, a control circuit, a power circuit driving the electromagnetic element and a MOSFET transistor for protection against polarity inversions, characterized in that the electronic device comprises a protection device for said MOSFET transistor, said MOSFET transistor comprising a drain, a gate and a source.
L’avantage de l’invention étant d’assurer avec des composants simples et à moindre coût une protection du MOSFET de protection contre les inversions de polarité. Selon l’un des aspects de l’invention, le dispositif de protection comprend une première résistance, une seconde résistance et un transistor, ledit transistor comprenant une base, un collecteur et un émetteur. La seconde résistance permet de contrôler la vitesse d’ouverture du transistor MOSFET et la première résistance permet de protéger la jonction base émetteur du transistor du dispositif de protection de surcharge de tension Vds du transistor MOSFET de protection contre les inversions de polarité. The advantage of the invention being to ensure, with simple components and at lower cost, protection of the protection MOSFET against polarity inversions. According to one of the aspects of the invention, the protection device comprises a first resistor, a second resistor and a transistor, said transistor comprising a base, a collector and an emitter. The second resistor makes it possible to control the opening speed of the MOSFET transistor and the first resistor makes it possible to protect the base-emitter junction of the transistor of the voltage overload protection device Vds of the MOSFET transistor for protection against polarity inversions.
Selon l’un des aspects de l’invention, le transistor MOSFET de protection contre les inversions de polarité est de type N. Il est dimensionné pour laisser passer le courant nécessaire au bon fonctionnement de l’élément électromagnétique. According to one of the aspects of the invention, the MOSFET transistor for protection against polarity inversions is of the N type. It is dimensioned to allow the current necessary for the proper functioning of the electromagnetic element to pass.
Selon l’un des aspects de l’invention, le transistor du dispositif de protection est du type transistor bipolaire NPN. According to one of the aspects of the invention, the transistor of the protection device is of the NPN bipolar transistor type.
Selon l’un des aspects de l’invention, la première résistance du dispositif de protection est positionnée entre la base du transistor bipolaire et le drain du transistor MOSFET. Cette première résistance permet d’assurer la détection du Vds et la protection de la jonction base émetteur du transistor bipolaire de surcharge de tension Vds du transistor MOSFET. According to one of the aspects of the invention, the first resistance of the protection device is positioned between the base of the bipolar transistor and the drain of the MOSFET transistor. This first resistor makes it possible to ensure the detection of the Vds and the protection of the base-emitter junction of the bipolar voltage overload transistor Vds of the MOSFET transistor.
Selon l’un des aspects de l’invention, la seconde résistance du dispositif de protection est positionnée entre le collecteur du transistor bipolaire et la grille du transistor MOSFET. Cette seconde résistance permet de contrôler l’ouverture du transistor MOSFET. According to one of the aspects of the invention, the second resistor of the protection device is positioned between the collector of the bipolar transistor and the gate of the MOSFET transistor. This second resistor is used to control the opening of the MOSFET transistor.
Selon l’un des aspects de l’invention, le collecteur du transistor bipolaire est connecté à la grille du transistor MOSFET via la seconde résistance, l’émetteur dudit transistor bipolaire étant raccordé à la source du transistor MOSFET et la base dudit transistor bipolaire étant reliée au drain du transistor MOSFET via la première résistance. Ce transistor bipolaire a pour fonction d’ouvrir le circuit de puissance en forçant la tension de pilotage de la grille du transistor MOSFET à 0V afin de protéger le transistor MOSFET de toutes surcharges. According to one of the aspects of the invention, the collector of the bipolar transistor is connected to the gate of the MOSFET transistor via the second resistor, the emitter of said bipolar transistor being connected to the source of the MOSFET transistor and the base of said bipolar transistor being connected to the drain of the MOSFET transistor via the first resistor. This bipolar transistor has the function of opening the power circuit by forcing the control voltage of the gate of the MOSFET transistor to 0V in order to protect the MOSFET transistor from any overloads.
Selon l’un des aspects de l’invention, une troisième résistance est positionnée entre la grille du transistor MOSFET de protection contre les inversions de polarité, via la seconde résistance et la sortie du circuit de contrôle qui pilote le transistor MOSFET de protection contre les inversions de polarité. La troisième résistance sert à piloter le transistor MOSFET de protection contre les inversions de polarité, via la seconde résistance et à limiter le courant de pilotage du circuit de contrôle quand le transistor est conducteur jusqu’à une tension de 0V entre la grille et la source du transistor MOSFET qui aura pour effet d’ouvrir le transistor MOSFET. According to one of the aspects of the invention, a third resistor is positioned between the gate of the MOSFET transistor for protection against polarity inversions, via the second resistor and the output of the control circuit which drives the MOSFET transistor for protection against polarity reversals. The third resistor is used to drive the MOSFET transistor for protection against polarity inversions, via the second resistor and to limit the piloting current of the control circuit when the transistor is conductive up to a voltage of 0V between the gate and the source of the MOSFET transistor which will have the effect of opening the MOSFET transistor.
Selon l’un des aspects de l’invention : le drain du transistor MOSFET est connecté à la borne négative de la batterie, la source du transistor MOSFET est connectée à la borne négative du circuit de puissance, une quatrième résistance est connectée à la borne négative du circuit de puissance et à la grille du transistor MOSFET. La quatrième résistance sert à fixer un potentiel de 0V entre la grille et la source du transistor MOSFET de protection contre les inversions de polarité quand il n’est pas sollicité et dans ce cas le transistor MOSFET sera verrouillé en position ouvert. According to one of the aspects of the invention: the drain of the MOSFET transistor is connected to the negative terminal of the battery, the source of the MOSFET transistor is connected to the negative terminal of the power circuit, a fourth resistor is connected to the terminal negative of the power circuit and to the gate of the MOSFET transistor. The fourth resistor is used to fix a potential of 0V between the gate and the source of the MOSFET transistor for protection against polarity inversions when it is not requested and in this case the MOSFET transistor will be locked in the open position.
Selon l’un des aspects de l’invention : le drain du transistor MOSFET est relié à la borne positive du circuit de puissance, la source du transistor MOSFET est reliée à la borne positive de la batterie, une quatrième résistance est connectée, via la seconde résistance à la grille du transistor MOSFET et à la borne positive de la batterie. According to one of the aspects of the invention: the drain of the MOSFET transistor is connected to the positive terminal of the power circuit, the source of the MOSFET transistor is connected to the positive terminal of the battery, a fourth resistor is connected, via the second resistance to the gate of the MOSFET transistor and the positive terminal of the battery.
Selon l’un des aspects de l’invention : le drain du transistor MOSFET est connecté à la borne négative de la batterie, la source du transistor MOSFET est connectée à la borne négative du circuit de puissance, une quatrième résistance est placée entre la grille et la source du transistor MOSFET. According to one of the aspects of the invention: the drain of the MOSFET transistor is connected to the negative terminal of the battery, the source of the MOSFET transistor is connected to the negative terminal of the power circuit, a fourth resistor is placed between the gate and the source of the MOSFET transistor.
Selon l’un des aspects de l’invention : le drain du transistor MOSFET est relié à la borne positive du circuit de puissance, la source du transistor MOSFET est reliée à la borne positive de la batterie, une quatrième résistance est positionnée entre la grille et la source du transistor MOSFET.According to one of the aspects of the invention: the drain of the MOSFET transistor is connected to the positive terminal of the power circuit, the source of the MOSFET transistor is connected to the positive terminal of the battery, a fourth resistor is positioned between the gate and the source of the MOSFET transistor.
Selon l’un des aspects de l’invention, le transistor bipolaire est de type NPN ayant un gain P ou encore HFE compris entre 1 et 100000, préférentiellement 250. According to one of the aspects of the invention, the bipolar transistor is of the NPN type having a gain P or even HFE of between 1 and 100,000, preferably 250.
Selon l’un des aspects de l’invention, le transistor bipolaire a un courant de collecteur IC compris entre 1mA et 100A, préférentiellement 500mA. According to one of the aspects of the invention, the bipolar transistor has an IC collector current of between 1mA and 100A, preferably 500mA.
Selon l’un des aspects de l’invention, la première résistance a une valeur comprise entre I Q et 1 MQ, préférentiellement 1KQ. According to one of the aspects of the invention, the first resistor has a value between IQ and 1 MQ, preferably 1KQ.
Selon l’un des aspects de l’invention, la seconde résistance a une valeur comprise entre I Q et 5M , préférentiellement 15K . According to one of the aspects of the invention, the second resistor has a value between IQ and 5M, preferably 15K.
Selon l’un des aspects de l’invention, le transistor MOSFET de protection contre les inversions de polarité a une RDSon comprise entre 0.5mQ et I 00Q. L’acronyme RDSon provient de l’expression Résistance Drain Source ON, ON signifiant activation en anglais et désignant le mode dans lequel le transistor MOSFET est fermé. According to one of the aspects of the invention, the MOSFET transistor for protection against polarity inversions has an RDSON of between 0.5mQ and I 00Q. The acronym RDSon comes from the expression Resistance Drain Source ON, ON meaning activation in English and designating the mode in which the MOSFET transistor is closed.
Selon l’un des aspects de l’invention, la quatrième résistance a une valeur comprise entre 1KQ et 500KQ, préférentiellement 47KQ. According to one of the aspects of the invention, the fourth resistor has a value between 1KQ and 500KQ, preferably 47KQ.
Selon l’un des aspects de l’invention, la troisième résistance a une valeur comprise entre I Q et 100KQ, préférentiellement 2.2KQ. According to one of the aspects of the invention, the third resistor has a value between IQ and 100KQ, preferably 2.2KQ.
Selon l’un des aspects de l’invention, l’élément électromagnétique est un moteur DC à balais ou sans balais de type “Brushless” ou tout autre type de charge pouvant générer une tension supérieure à la tension de la batterie d’alimentation. Selon l’un des aspects de l’invention, la batterie délivre une tension comprise entre 0V et 100V, préférentiellement une tension nominale de 12V pouvant varier de 0 à 16V et en cas d’inversion de polarité respectivement de 0V à -100V et préférentiellement de OV à -16V. According to one of the aspects of the invention, the electromagnetic element is a brushed or brushless DC motor of the “Brushless” type or any other type of load capable of generating a voltage higher than the voltage of the supply battery. According to one of the aspects of the invention, the battery delivers a voltage between 0V and 100V, preferably a nominal voltage of 12V which can vary from 0 to 16V and in the event of polarity inversion respectively from 0V to -100V and preferably from OV to -16V.
L’invention a encore pour objet un groupe moto- ventilateur pour véhicule automobile, ledit groupe moto-ventilateur comprenant : un ventilateur entraîné en rotation par un moteur électrique; et un dispositif électronique de commande pour piloter le moteur électrique, équipé dudit dispositif de protection du MOSFET de protection contre les inversions de polarité. Another subject of the invention is a fan-motor unit for a motor vehicle, said fan-motor unit comprising: a fan driven in rotation by an electric motor; and an electronic control device for driving the electric motor, equipped with said MOSFET protection device for protection against polarity inversions.
Brève description des dessins Brief description of the drawings
D’autres caractéristiques, détails et avantages de l’invention apparaîtront à la lecture de la description détaillée ci-après, et à l’analyse des dessins annexés, sur lesquels : Other characteristics, details and advantages of the invention will appear on reading the detailed description below, and on analyzing the appended drawings, in which:
[Fig 1] représente schématiquement un dispositif électronique de commande électrique selon l’état de l’art. [Fig 1] schematically represents an electronic electrical control device according to the state of the art.
[Fig 2] représente schématiquement un dispositif électronique de commande électrique avec le dispositif de protection du MOSFET selon un premier mode de réalisation de l’invention. [Fig 2] schematically represents an electronic electrical control device with the MOSFET protection device according to a first embodiment of the invention.
[Fig 3] représente schématiquement un dispositif électronique de commande électrique avec le dispositif de protection du MOSFET selon un second mode de réalisation de l’invention. [Fig 3] schematically represents an electronic electrical control device with the MOSFET protection device according to a second embodiment of the invention.
[Fig 4] représente schématiquement un dispositif électronique de commande électrique avec le dispositif de protection du MOSFET selon un troisième mode de réalisation de l’invention. [Fig 4] schematically represents an electronic electrical control device with the MOSFET protection device according to a third embodiment of the invention.
[Fig 5] représente schématiquement un dispositif électronique de commande électrique avec le dispositif de protection du MOSFET selon un quatrième mode de réalisation de l’invention. [Fig 5] schematically represents an electronic electrical control device with the MOSFET protection device according to a fourth embodiment of the invention.
[Fig 6] représente un premier exemple d’élément magnétique commandé par le dispositif électronique de commande électrique d’une des figures 2 à 5, l’élément magnétique étant ici un moteur électrique sans balais du type “brushless” triphasé. [Fig 6] represents a first example of a magnetic element controlled by the electronic electrical control device of one of Figures 2 to 5, the magnetic element here being a brushless electric motor of the three-phase “brushless” type.
[Fig 7] représente un second exemple d’élément magnétique commandé par le dispositif électronique de commande électrique d’une des figures 2 à 5, l’élément magnétique étant ici un moteur électrique sans balais du type “brushless” polyphasé. [Fig 7] represents a second example of a magnetic element controlled by the electronic electrical control device of one of Figures 2 to 5, the magnetic element here being a brushless electric motor of the polyphase “brushless” type.
[Fig 8] représente un troisième exemple d’élément magnétique commandé par le dispositif électronique de commande électrique d’une des figures 2 à 5, l’élément magnétique étant ici un moteur électrique DC avec balais. [Fig 8] represents a third example of a magnetic element controlled by the electronic electrical control device of one of Figures 2 to 5, the magnetic element here being a DC electric motor with brushes.
Description détaillée detailed description
Comme présenté en figure 1 représente un dispositif électronique de commande électrique d’un élément électromagnétique comprenant un transistor MOSFET Ml de protection contre les inversions de polarité, ce transistor étant dans cette figure non protégé. As presented in FIG. 1 represents an electronic device for the electrical control of an electromagnetic element comprising a MOSFET transistor M1 for protection against polarity inversions, this transistor being in this figure unprotected.
Quant à la figure 2, elle représente un dispositif électronique de commande 100 d’un élément électromagnétique 200 selon la présente invention, le dispositif électronique 100 comprenant : une batterie d’ alimentation V 1 , un circuit de contrôle 4, un circuit de puissance 2 pilotant l’élément électromagnétique 200 et un transistor MOSFET Ml de protection contre les inversions de polarité, caractérisé en ce que le dispositif électronique 100 comprend également un dispositif de protection 3 dudit transistor MOSFET Ml, ledit transistor MOSFET Ml comprenant un drain, une grille et une source. As for FIG. 2, it represents an electronic device 100 for controlling an electromagnetic element 200 according to the present invention, the electronic device 100 comprising: a supply battery V 1 , a control circuit 4, a power circuit 2 driving the electromagnetic element 200 and a MOSFET transistor M1 for protection against polarity inversions, characterized in that the electronic device 100 also comprises a device protection 3 of said MOSFET transistor M1, said MOSFET transistor M1 comprising a drain, a gate and a source.
Le transistor MOSFET Ml de protection contre les inversions de polarité peut être vu, en première approximation, comme un interrupteur commandé. Ainsi, selon un signal de commande qu’il reçoit sur sa grille, il est fermé lorsque la polarité de la batterie est dans le bon sens et il est ouvert lorsque la polarité de la batterie est inversée. The MOSFET transistor M1 for protection against polarity inversions can be seen, to a first approximation, as a controlled switch. Thus, according to a control signal that it receives on its gate, it is closed when the polarity of the battery is in the right direction and it is open when the polarity of the battery is reversed.
Comme présenté aux figures 2 à 5, et selon l’ensemble des modes de réalisation de l’invention, le dispositif de protection 3 comprend une première résistance RI, une seconde résistance R2 et un transistor Ql, ledit transistor Q1 comprenant une base, un collecteur et un émetteur. La seconde résistance R2 permet de contrôler la vitesse d’ouverture du transistor MOSFET Ml et la première résistance RI permet de protéger la jonction base émetteur du transistor Ql de surcharge de tension Vds du transistor MOSFET Ml de protection contre les inversions de polarité. As shown in Figures 2 to 5, and according to all of the embodiments of the invention, the protection device 3 comprises a first resistor R1, a second resistor R2 and a transistor Q1, said transistor Q1 comprising a base, a collector and an emitter. The second resistor R2 makes it possible to control the opening speed of the MOSFET transistor Ml and the first resistor RI makes it possible to protect the base-emitter junction of the transistor Ql from voltage overload Vds of the MOSFET transistor Ml for protection against polarity reversals.
Le transistor MOSFET Ml de protection contre les inversions de polarité est de type N. Il est dimensionné pour laisser passer le courant nécessaire au bon fonctionnement de l’élément électromagnétique 200. The MOSFET transistor M1 for protection against polarity inversions is of the N type. It is dimensioned to allow the current necessary for the proper functioning of the electromagnetic element 200 to pass.
Le transistor Ql est du type transistor bipolaire NPN. Transistor Q1 is of the NPN bipolar transistor type.
Le dispositif de protection 3 du transistor MOSFET Ml détecte une tension anormale aux bornes du transistor MOSFET Ml de canal N soit quand la tension de pilotage du transistor MOSFET Ml décroît en dessous d’un seuil nominal de 0,6V et variant de 0,2V et IV en fonction de la température et du transistor bipolaire Ql utilisé, ou bien lorsqu’un courant inverse traverse le transistor MOSFET Ml, ou encore les deux à la fois. Si une telle tension anormale aux bornes du MOSFET Ml est détectée, le dispositif court-circuite la tension Vgs du transistor MOSFET Ml par une ouverture rapide mais contrôlée dudit transistor MOSFET Ml grâce à la seconde résistance R2. En surveillant à la fois la tension et le courant, par l’intermédiaire du dispositif de protection 3 de la présente invention, on protège le MOSFET Ml de surcharge pouvant occasionner sa destruction. Les variations de tension aux bornes du transistor MOSFET Ml sont la résultante de sa résistance interne. Sa résistance interne croît avec la température ainsi qu’avec la décroissance de sa tension de commande, ce qui fait que le dispositif réagira plus tôt avec l’augmentation de la température. De plus, le seuil de détection aussi décroît avec la température ce qui nous garantit un non emballement du système. Le transistor QI est un transistor bipolaire qui sert à détecter une tension positive Vds entre le drain et la source du transistor MOSFET Ml. Cette tension met en conduction le transistor bipolaire Q1 dès que la tension Vbe entre la base et l’émetteur du transistor bipolaire Q1 franchit un seuil de tension qui permet le passage d’un courant Ib dans la base du transistor bipolaire Ql. Cette tension est la résultante du produit mathématique d’un courant circulant du drain vers la source du transistor MOSFET Ml Id multiplié par la valeur de la résistance à l’état passant RDSon du transistor MOSFET Ml. The protection device 3 of the MOSFET transistor M1 detects an abnormal voltage at the terminals of the N-channel MOSFET transistor M1 either when the driving voltage of the MOSFET transistor M1 decreases below a nominal threshold of 0.6V and varying by 0.2V and IV as a function of the temperature and of the bipolar transistor Q1 used, or else when a reverse current passes through the MOSFET transistor M1, or even both at the same time. If such an abnormal voltage across the terminals of the MOSFET M1 is detected, the device short-circuits the voltage Vgs of the MOSFET transistor M1 by a rapid but controlled opening of said MOSFET transistor M1 thanks to the second resistor R2. By monitoring both the voltage and the current, by means of the protection device 3 of the present invention, the MOSFET M1 is protected from overload which could cause its destruction. The voltage variations at the terminals of the MOSFET transistor M1 are the result of its internal resistance. Its internal resistance increases with temperature as well as with the decrease in its control voltage, which means that the device will react sooner with the increase in temperature. In addition, the detection threshold also decreases with temperature, which guarantees that the system will not run away. The transistor QI is a bipolar transistor which is used to detect a positive voltage Vds between the drain and the source of the MOSFET transistor M1. This voltage turns on the bipolar transistor Q1 as soon as the voltage Vbe between the base and the emitter of the bipolar transistor Q1 crosses a voltage threshold which allows the passage of a current Ib in the base of the bipolar transistor Q1. This voltage is the result of the mathematical product of a current flowing from the drain to the source of the MOSFET transistor M1 Id multiplied by the value of the on-state resistance RDSon of the MOSFET transistor M1.
[Math 1] [Math 1]
Vbe = RDSon x Id Vbe = RDSon x Id
Le RDSon du MOSFET croît rapidement quand la tension de pilotage de sa grille diminue en dessous d’un certain seuil. La tension entre le drain et la source du transistor MOSFET Ml augmente donc aussi quand la tension entre sa grille et sa source Vgs diminue. Le courant dans la base du transistor bipolaire Ql est amplifié par son coefficient d’amplification Hfe ou [3 tirant un courant du collecteur le du transistor bipolaire Ql vers son émetteur venant diminuer la tension de grille du transistor MOSFET Ml de protection contre les inversions de polarité ce qui provoquera une très rapide augmentation de la résistance drain-source RDSon du transistor MOSFET Ml jusqu'à la complète ouverture du transistor MOSFET ML [Math 2] le = Hfe x Ib The RDSon of the MOSFET increases rapidly when its gate driving voltage decreases below a certain threshold. The voltage between the drain and the source of the MOSFET transistor M1 therefore also increases when the voltage between its gate and its source Vgs decreases. The current in the base of the bipolar transistor Ql is amplified by its amplification coefficient Hfe or [3 drawing a current from the collector le of the bipolar transistor Ql towards its emitter coming to reduce the gate voltage of the MOSFET transistor Ml for protection against inversions of polarity which will cause a very rapid increase in the drain-source resistance RDSon of the MOSFET transistor Ml until the complete opening of the MOSFET transistor ML [Math 2] le = Hfe x Ib
Dès que le dispositif de protection 3 commence à ouvrir le transistor MOSFET Ml, sa tension Vds augmentera automatiquement la tension Vbe du transistor Ql en accélérant le processus décrit précédemment ce qui verrouille le transistor MOSFET Ml en position ouvert. As soon as the protection device 3 begins to open the MOSFET transistor M1, its voltage Vds will automatically increase the voltage Vbe of the transistor Q1 by accelerating the process described above which locks the MOSFET transistor M1 in the open position.
La première résistance RI du dispositif de protection 3 est positionnée entre la base du transistor bipolaire Ql et le drain du transistor MOSFET ML Cette première résistance RI permet d’assurer la détection du Vds et la protection de la jonction base émetteur du transistor bipolaire Ql de surcharge de tension Vds du transistor MOSFET ML The first resistance RI of the protection device 3 is positioned between the base of the bipolar transistor Ql and the drain of the MOSFET transistor ML This first resistance RI makes it possible to ensure the detection of the Vds and the protection of the base-emitter junction of the bipolar transistor Ql of voltage overload Vds of the MOSFET transistor ML
La seconde résistance R2 du dispositif de protection 3 est positionnée entre le collecteur du transistor bipolaire Ql et la grille du transistor MOSFET ML Cette seconde résistance R2 permet de contrôler l’ouverture du transistor MOSFET ML The second resistor R2 of the protection device 3 is positioned between the collector of the bipolar transistor Ql and the gate of the MOSFET transistor ML This second resistor R2 makes it possible to control the opening of the MOSFET transistor ML
Le collecteur du transistor bipolaire Ql est connecté à la grille du transistor MOSFET Ml via la seconde résistance R2, l’émetteur dudit transistor bipolaire Ql étant raccordé à la source du transistor MOSFET Ml et la base dudit transistor bipolaire Ql étant reliée au drain du transistor MOSFET Ml via la première résistance RL Ce transistor bipolaire Ql a pour fonction d’ouvrir le circuit de puissance 2 en forçant la tension de pilotage de la grille du transistor MOSFET Ml à 0V afin de protéger le transistor MOSFET Ml de toutes surcharges. Une troisième résistance R4 est positionnée entre la grille du transistor MOSFET Ml de protection contre les inversions de polarité, via la seconde résistance R2 et la sortie F du circuit de contrôle 4 qui pilote le transistor MOSFET Ml de protection contre les inversions de polarité. Fa troisième résistance R4 sert à piloter le transistor MOSFET Ml de protection contre les inversions de polarité, via la seconde résistance R2 et à limiter le courant de pilotage du circuit de contrôle 4 quand le transistor Q1 est conducteur jusqu’à une tension de 0V entre la grille et la source du transistor MOSFET Ml qui aura pour effet d’ouvrir le transistor MOSFET Ml. The collector of bipolar transistor Ql is connected to the gate of MOSFET transistor Ml via second resistor R2, the emitter of said bipolar transistor Ql being connected to the source of MOSFET transistor Ml and the base of said bipolar transistor Ql being connected to the drain of transistor MOSFET M1 via first resistor RL The function of this bipolar transistor Q1 is to open power circuit 2 by forcing the control voltage of the gate of MOSFET transistor M1 to 0V in order to protect MOSFET transistor M1 from any overloads. A third resistor R4 is positioned between the gate of the MOSFET transistor M1 for protection against polarity reversals, via the second resistor R2 and the output F of the control circuit 4 which drives the MOSFET transistor M1 for protection against polarity reversals. The third resistor R4 is used to drive the MOSFET transistor M1 for protection against polarity reversals, via the second resistor R2 and to limit the driving current of the control circuit 4 when the transistor Q1 is conductive up to a voltage of 0V between the gate and the source of the MOSFET transistor M1 which will have the effect of opening the MOSFET transistor M1.
Pour l’ensemble des modes de réalisation de l’invention, le transistor bipolaire Q1 est de type NPN ayant un gain P ou encore HFE compris entre 1 et 100000, préférentiellement 250. For all of the embodiments of the invention, the bipolar transistor Q1 is of the NPN type having a gain P or else HFE of between 1 and 100000, preferably 250.
Le transistor bipolaire Q1 a un courant de collecteur IC compris entre 1mA et 100A, préférentiellement 500mA. Bipolar transistor Q1 has a collector current IC of between 1mA and 100A, preferably 500mA.
La première résistance RI a une valeur comprise entre I Q et 1MQ, préférentiellement 1KQ. La seconde résistance R2 a une valeur comprise entre 1Q et 5MQ, préférentiellement 15KQ. Le transistor MOSFET Ml de protection contre les inversions de polarité a une RDSon comprise entre O.5mf2 et 100Q. The first resistor RI has a value between IQ and 1MQ, preferably 1KQ. The second resistor R2 has a value between 1Q and 5MQ, preferably 15KQ. The MOSFET transistor M1 for protection against polarity inversions has an RDSon of between 0.5mf2 and 100Ω.
La quatrième résistance R3 a une valeur comprise entre 1KQ et 500KQ, préférentiellement 47KQ. La troisième résistance R4 a une valeur comprise entre I Q et 100KQ, préférentiellement 2.2KQ. L’élément électromagnétique 200 est un moteur DC à balais ou sans balais de type « Brushless » ou tout autre type de charge pouvant générer une tension supérieure à la tension de la batterie d’ alimentation V 1. The fourth resistor R3 has a value between 1KQ and 500KQ, preferably 47KQ. The third resistor R4 has a value between IQ and 100KQ, preferably 2.2KQ. The electromagnetic element 200 is a brushed or brushless DC motor of the “Brushless” type or any other type of load that can generate a voltage higher than the voltage of the supply battery V 1.
La batterie VI délivre une tension comprise entre 0V et 100V, préférentiellement une tension nominale de 12V pouvant varier de 0 à 16V et en cas d’inversion de polarité respectivement de 0V à - 100V et préférentiellement de 0V à -16V. The battery VI delivers a voltage between 0V and 100V, preferably a nominal voltage of 12V which can vary from 0 to 16V and in the event of polarity inversion respectively from 0V to -100V and preferably from 0V to -16V.
Comme représenté en figure 2 et selon un premier mode de réalisation, le drain du transistor MOSFET Ml est connecté à la borne négative de la batterie VI, la source du transistor MOSFET Ml est connectée à la borne négative du circuit de puissance 2, une quatrième résistance R3 est connectée à la borne négative du circuit de puissance 2 et à la grille du transistor MOSFET ML As represented in FIG. 2 and according to a first embodiment, the drain of MOSFET transistor M1 is connected to the negative terminal of battery VI, the source of MOSFET transistor M1 is connected to the negative terminal of power circuit 2, a fourth resistor R3 is connected to the negative terminal of the power circuit 2 and to the gate of the MOSFET transistor ML
La quatrième résistance R3 sert à fixer un potentiel de 0V entre la grille et la source du transistor MOSFET Ml de protection contre les inversions de polarité quand il n’est pas sollicité et dans ce cas le transistor MOSFET Ml sera verrouillé en position ouvert. The fourth resistor R3 is used to fix a potential of 0V between the gate and the source of the MOSFET transistor Ml for protection against polarity reversals when it is not requested and in this case the MOSFET transistor Ml will be locked in the open position.
Comme représenté en figure 3 et selon un second mode de réalisation, : le drain du transistor MOSFET Ml est relié à la borne positive du circuit de puissance 2, la source du transistor MOSFET Ml est reliée à la borne positive de la batterie VI, une quatrième résistance R3 est connectée, via la seconde résistance R2 à la grille du transistor MOSFET Ml et à la borne positive de la batterie VI. As represented in FIG. 3 and according to a second embodiment: the drain of MOSFET transistor M1 is connected to the positive terminal of power circuit 2, the source of MOSFET transistor M1 is connected to the positive terminal of battery VI, a fourth resistor R3 is connected via second resistor R2 to the gate of MOSFET transistor M1 and to the positive terminal of battery VI.
Comme représenté en figure 4 et selon un troisième mode de réalisation, : le drain du transistor MOSFET Ml est connecté à la borne négative de la batterie VI, la source du transistor MOSFET Ml est connectée à la borne négative du circuit de puissance 2, une quatrième résistance R3 est placée entre la grille et la source du transistor MOSFET Ml. Comme représenté en figure 5 et selon un quatrième mode de réalisation, le transistor MOSFET Ml de protection contre les inversions de polarité a son drain relié à la borne positive du circuit de puissance 2 et sa source reliée à la borne positive de la batterie VI, ainsi qu’une quatrième résistance R3 positionnée entre la grille et la source du transistor MOSFET Ml de protection contre les inversions de polarité. As represented in FIG. 4 and according to a third embodiment: the drain of MOSFET transistor M1 is connected to the negative terminal of battery VI, the source of MOSFET transistor M1 is connected to the negative terminal of power circuit 2, a fourth resistor R3 is placed between the gate and the source of the MOSFET transistor M1. As represented in FIG. 5 and according to a fourth embodiment, the MOSFET transistor M1 for protection against polarity inversions has its drain connected to the positive terminal of the power circuit 2 and its source connected to the positive terminal of the battery VI, as well as a fourth resistor R3 positioned between the gate and the source of the MOSFET transistor M1 for protection against polarity inversions.
L’invention a encore pour objet un groupe moto- ventilateur 5 pour véhicule automobile, ledit groupe moto-ventilateur 5 comprenant : un ventilateur 6 entraîné en rotation par un moteur électrique; et un dispositif électronique de commande 100 pour piloter le moteur électrique, équipé dudit dispositif de protection 3 du MOSFET Ml de protection contre les inversions de polarité. L’invention ne saurait toutefois se limiter aux moyens et configurations exclusivement décrits et illustrés, et s’applique également à tous moyens ou configurations, équivalents et à toute combinaison de tels moyens ou configurations. Another subject of the invention is a motor-driven fan unit 5 for a motor vehicle, said motor-driven fan unit 5 comprising: a fan 6 driven in rotation by an electric motor; and an electronic control device 100 for controlling the electric motor, equipped with said protection device 3 of the MOSFET M1 for protection against polarity inversions. The invention cannot however be limited to the means and configurations exclusively described and illustrated, and also applies to all means or configurations, equivalents and to any combination of such means or configurations.

Claims

9 9
REVENDICATIONS
[Revendication 1] Dispositif électronique de commande (100) d’un élément électromagnétique[Claim 1] Electronic control device (100) of an electromagnetic element
(200), le dispositif électronique (100) comprenant : une batterie d’alimentation (VI), un circuit de contrôle (4), un circuit de puissance (2) pilotant l’élément électromagnétique (200) et un transistor MOSFET (Ml) de protection contre les inversions de polarité, caractérisé en ce que le dispositif électronique (100) comprend un dispositif de protection (3) dudit transistor MOSFET (Ml), ledit transistor MOSFET (Ml) comprenant un drain, une grille et une source. (200), the electronic device (100) comprising: a power supply battery (VI), a control circuit (4), a power circuit (2) driving the electromagnetic element (200) and a MOSFET transistor (Ml ) protection against polarity reversals, characterized in that the electronic device (100) comprises a protection device (3) of said MOSFET transistor (Ml), said MOSFET transistor (Ml) comprising a drain, a gate and a source.
[Revendication 2] Dispositif électronique de commande (100) d’un élément électromagnétique[Claim 2] Electronic control device (100) of an electromagnetic element
(200) selon la revendication précédente, dans lequel le dispositif de protection (3) comprend une première résistance (RI), une seconde résistance (R2) et un transistor (Ql), ledit transistor (Ql) comprenant une base, un collecteur et un émetteur. (200) according to the preceding claim, in which the protection device (3) comprises a first resistor (RI), a second resistor (R2) and a transistor (Ql), said transistor (Ql) comprising a base, a collector and an emitter.
[Revendication 3] Dispositif électronique de commande (100) d’un élément électromagnétique[Claim 3] Electronic control device (100) of an electromagnetic element
(200) selon l’une des revendications 1 et 2, caractérisé en ce que le transistor MOSFET (Ml) de protection contre les inversions de polarité est de type N. (200) according to one of claims 1 and 2, characterized in that the MOSFET transistor (Ml) for protection against polarity inversions is of the N type.
[Revendication 4] Dispositif électronique de commande (100) d’un élément électromagnétique[Claim 4] Electronic control device (100) of an electromagnetic element
(200) selon l’une des revendications 2 ou 3 caractérisé en ce que le transistor (Ql) est du type transistor bipolaire NPN. (200) according to one of claims 2 or 3 characterized in that the transistor (Ql) is of the NPN bipolar transistor type.
[Revendication 5] Dispositif électronique de commande (100) d’un élément électromagnétique[Claim 5] Electronic control device (100) of an electromagnetic element
(200) selon l’une quelconque des revendications 2 à 4 caractérisé en ce que la première résistance (RI) du dispositif de protection (3) est positionnée entre la base du transistor bipolaire (Ql) et le drain du transistor MOSFET (Ml). (200) according to any one of claims 2 to 4 characterized in that the first resistor (RI) of the protection device (3) is positioned between the base of the bipolar transistor (Ql) and the drain of the MOSFET transistor (Ml) .
[Revendication 6] Dispositif électronique de commande (100) d’un élément électromagnétique[Claim 6] Electronic control device (100) of an electromagnetic element
(200) selon l’une quelconque des revendications 2 à 5 caractérisé en ce que la seconde résistance (R2) du dispositif de protection (3) est positionnée entre le collecteur du transistor bipolaire (Ql) et la grille du transistor MOSFET (Ml). (200) according to any one of claims 2 to 5 characterized in that the second resistor (R2) of the protection device (3) is positioned between the collector of the bipolar transistor (Ql) and the gate of the MOSFET transistor (Ml) .
[Revendication 7] Dispositif électronique de commande (100) d’un élément électromagnétique[Claim 7] Electronic control device (100) of an electromagnetic element
(200) selon l’une quelconque des revendications 2 à 6 caractérisé en ce que : le collecteur du transistor bipolaire (Ql) est connecté à la grille du transistor MOSFET (Ml) via la seconde résistance (R2), l’émetteur dudit transistor bipolaire (Ql) est raccordé à la source du transistor MOSFET (Ml) et la base dudit transistor bipolaire (QI) est reliée au drain du transistor MOSFET (Ml) via la première résistance (RI). (200) according to any one of Claims 2 to 6, characterized in that: the collector of the bipolar transistor (Q1) is connected to the gate of the MOSFET transistor (M1) via the second resistor (R2), the emitter of the said transistor bipolar (Ql) is connected to the source of the MOSFET transistor (Ml) and the base of said bipolar transistor (QI) is connected to the drain of the MOSFET transistor (Ml) via the first resistor (RI).
[Revendication 8] Dispositif électronique de commande (100) d’un élément électromagnétique (200) selon l’une quelconque des revendications 2 à 7 caractérisé en ce qu’une troisième résistance (R4) est connectée via la seconde résistance (R2) à la grille du transistor MOSFET (Ml) et à la sortie (F) du circuit de contrôle (4). [Claim 8] Electronic control device (100) of an electromagnetic element (200) according to any one of Claims 2 to 7, characterized in that a third resistor (R4) is connected via the second resistor (R2) to the gate of the MOSFET transistor (Ml) and at the output (F) of the control circuit (4).
[Revendication 9] Dispositif électronique de commande (100) d’un élément électromagnétique (200) selon l’une quelconque des revendications 2 à 8 caractérisé en ce que : le drain du transistor MOSFET (Ml) est connecté à la borne négative de la batterie (V 1), la source du transistor MOSFET (Ml) est connectée à la borne négative du circuit de puissance (2), une quatrième résistance (R3) est connectée à la borne négative du circuit de puissance (2) et à la grille du transistor MOSFET (Ml). [Claim 9] Electronic control device (100) of an electromagnetic element (200) according to any one of Claims 2 to 8, characterized in that: the drain of the MOSFET transistor (M1) is connected to the negative terminal of the battery (V 1), the source of the MOSFET transistor (Ml) is connected to the negative terminal of the power circuit (2), a fourth resistor (R3) is connected to the negative terminal of the power circuit (2) and to the gate of the MOSFET transistor (Ml).
[Revendication 10] Dispositif électronique de commande (100) d’un élément électromagnétique (200) selon l’une quelconque des revendications 2 à 8, caractérisé en ce que : le drain du transistor MOSFET (Ml) est relié à la borne positive du circuit de puissance (2), la source du transistor MOSFET (Ml) est reliée à la borne positive de la batterie (VI), une quatrième résistance (R3) est connectée, via la seconde résistance (R2) à la grille du transistor MOSFET (Ml) et à la borne positive de la batterie (VI). [Claim 10] Electronic control device (100) of an electromagnetic element (200) according to any one of Claims 2 to 8, characterized in that: the drain of the MOSFET transistor (M1) is connected to the positive terminal of the power circuit (2), the source of the MOSFET transistor (Ml) is connected to the positive terminal of the battery (VI), a fourth resistor (R3) is connected, via the second resistor (R2) to the gate of the MOSFET transistor (Ml) and the positive battery terminal (VI).
[Revendication 11] Dispositif électronique de commande (100) d’un élément électromagnétique (200) selon l’une quelconque des revendications 2 à 8, caractérisé en ce que : le drain du transistor MOSFET (Ml) est connecté à la borne négative de la batterie (V 1), la source du transistor MOSFET (Ml) est connectée à la borne négative du circuit de puissance (2), une quatrième résistance (R3) est placée entre la grille et la source du transistor MOSFET (Ml). [Claim 11] Electronic control device (100) of an electromagnetic element (200) according to any one of Claims 2 to 8, characterized in that: the drain of the MOSFET transistor (M1) is connected to the negative terminal of the battery (V 1), the source of the MOSFET transistor (Ml) is connected to the negative terminal of the power circuit (2), a fourth resistor (R3) is placed between the gate and the source of the MOSFET transistor (Ml).
[Revendication 12] Dispositif électronique de commande (100) d’un élément électromagnétique (200) selon l’une quelconque des revendications 2 à 8, caractérisé en ce que : le drain du transistor MOSFET (Ml) est relié à la borne positive du circuit de puissance (2), la source du transistor MOSFET (Ml) est reliée à la borne positive de la batterie (VI), une quatrième résistance (R3) est positionnée entre la grille et la source du transistor MOSFET (Ml). [Claim 12] Electronic control device (100) of an electromagnetic element (200) according to any one of Claims 2 to 8, characterized in that: the drain of the MOSFET transistor (M1) is connected to the positive terminal of the power circuit (2), the source of the MOSFET transistor (Ml) is connected to the positive terminal of the battery (VI), a fourth resistor (R3) is positioned between the gate and the source of the MOSFET transistor (Ml).
[Revendication 13] Elément électromagnétique (200) commandé par un dispositif électronique de commande (100) selon l’une quelconque des revendications précédentes. [Claim 13] An electromagnetic element (200) controlled by an electronic control device (100) according to any one of the preceding claims.
[Revendication 14] Groupe moto-ventilateur (5) pour véhicule automobile, ledit groupe moto- ventilateur (5) comprenant : 11 un ventilateur (6) entraîné en rotation par un moteur électrique; et un dispositif électronique de commande (100) d’un élément électromagnétique (200) selon l’une des revendications précédentes, ledit dispositif électronique de commande (100) étant configuré pour piloter le moteur électrique. [Claim 14] Motor-driven fan unit (5) for a motor vehicle, said motor-driven fan unit (5) comprising: 11 a fan (6) driven in rotation by an electric motor; and an electronic control device (100) of an electromagnetic element (200) according to one of the preceding claims, said electronic control device (100) being configured to drive the electric motor.
PCT/EP2021/085476 2021-01-26 2021-12-13 Mosfet protection WO2022161687A1 (en)

Applications Claiming Priority (2)

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FR2100718A FR3119275A1 (en) 2021-01-26 2021-01-26 MOSFET Protection
FRFR2100718 2021-01-26

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009007818A1 (en) * 2009-02-07 2010-08-12 Leopold Kostal Gmbh & Co. Kg Switching arrangement, has switch element for closing N-channel metal oxide semiconductor series transistor during occurrence of reverse polarity, and bootstrap capacitor increasing gate potential of high-side switch
DE102010015096A1 (en) * 2010-04-15 2011-10-20 Continental Automotive Gmbh Driver circuit for load in motor car, has bipolar transistor whose load path is provided between gate terminal and power transistor terminal, where base terminal of bipolar transistor is connected with capacitor charged by power transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009007818A1 (en) * 2009-02-07 2010-08-12 Leopold Kostal Gmbh & Co. Kg Switching arrangement, has switch element for closing N-channel metal oxide semiconductor series transistor during occurrence of reverse polarity, and bootstrap capacitor increasing gate potential of high-side switch
DE102010015096A1 (en) * 2010-04-15 2011-10-20 Continental Automotive Gmbh Driver circuit for load in motor car, has bipolar transistor whose load path is provided between gate terminal and power transistor terminal, where base terminal of bipolar transistor is connected with capacitor charged by power transistor

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