WO2022143303A1 - 太赫兹载波发送装置、接收装置 - Google Patents

太赫兹载波发送装置、接收装置 Download PDF

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Publication number
WO2022143303A1
WO2022143303A1 PCT/CN2021/140105 CN2021140105W WO2022143303A1 WO 2022143303 A1 WO2022143303 A1 WO 2022143303A1 CN 2021140105 W CN2021140105 W CN 2021140105W WO 2022143303 A1 WO2022143303 A1 WO 2022143303A1
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Prior art keywords
terahertz
metal
transmission line
mode
mode excitation
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PCT/CN2021/140105
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English (en)
French (fr)
Inventor
张鲁奇
李昆
吕瑞
刘余
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华为技术有限公司
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Priority to EP21914042.3A priority Critical patent/EP4262097A4/en
Publication of WO2022143303A1 publication Critical patent/WO2022143303A1/zh
Priority to US18/344,251 priority patent/US20230352807A1/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/28—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium using the near field of leaky cables, e.g. of leaky coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H01P3/121—Hollow waveguides integrated in a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
    • H01P5/022—Transitions between lines of the same kind and shape, but with different dimensions
    • H01P5/024—Transitions between lines of the same kind and shape, but with different dimensions between hollow waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/087—Transitions to a dielectric waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/1022—Transitions to dielectric waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B3/00—Line transmission systems
    • H04B3/02—Details
    • H04B3/04—Control of transmission; Equalising
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/0246—Termination of transmission lines
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/025—Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10098—Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas

Definitions

  • the present invention relates to the field of terahertz communication, in particular to a terahertz carrier transmission device and a reception device.
  • connection method is to directly connect the copper cable, but as the operating frequency increases, the increased metal loss will greatly limit the transmission distance and speed of the copper cable.
  • Another connection method is active optical cable, but due to the need for photoelectric conversion for transceiver, power consumption and cost are greatly increased.
  • an interconnection method which uses a Tera-Hertz (Tera-Hertz, THz) frequency band as a carrier wave and a THz transmission line as a transmission medium for interconnection in data centers and other short-distance high-speed communication scenarios.
  • THz Tera-Hertz
  • a microstrip line is usually used to guide the terahertz signal in the radio frequency transceiver chip into the resonant cavity of the metal connector, and the electromagnetic signal is coupled to the terahertz transmission line.
  • This kind of connector will introduce reflection resonance points, thereby greatly reducing the coupling efficiency and operating bandwidth.
  • Embodiments of the present invention provide a terahertz carrier wave transmitting device and a terahertz carrier wave receiving device, so as to realize efficient electromagnetic coupling and improve the transmission bandwidth of data.
  • an embodiment of the present invention provides a terahertz carrier transmission device, including: a feeder transmission line, a mode excitation structure, a mode conversion structure, a terahertz transmission line, and a circuit board; wherein: the feeder transmission line is used to receive a radio frequency transmission circuit The emitted electrical signal is transmitted to the mode excitation structure; the mode excitation structure is used to excite the terahertz signal according to the received electrical signal; the mode conversion structure includes an inner cavity with a metal inner wall, the mode excitation structure and the terahertz signal One end of the transmission line is located in the inner cavity, so that the terahertz signal excited by the mode excitation structure is coupled into the terahertz transmission line; the terahertz transmission line is used to transmit the terahertz signal; and the circuit board is used to fix the feed transmission line and the mode excitation structure, the mode
  • the conversion structure also includes a positioning groove, which is used to insert a part of the circuit board and the mode excitation structure
  • feed transmission lines, mode excitation structures, metal vias are located on the circuit board. Thereby, the coupling efficiency can be further improved.
  • the feeding transmission line, the mode excitation structure, and the metal through hole are located on the package substrate of the radio frequency transmitting chip, and the metal through hole part on the package substrate and the corresponding part of the PCB board are pressed together by the boundary of the positioning groove. Thereby, the coupling efficiency can be further improved.
  • the feeding transmission line, the mode excitation structure, and the metal through hole are located on the radio frequency transmitting chip, and the metal through hole part on the chip and the corresponding part of the PCB board are pressed together by the boundary of the positioning groove.
  • the coupling efficiency can be further improved.
  • the radio frequency transmitting chip further includes an impedance matching structure for matching the impedance between the feeding transmission line and the mode excitation structure. Thereby, the coupling efficiency can be further improved.
  • multiple metal through holes are distributed on both sides of the impedance matching structure. Thereby, the coupling efficiency can be further improved.
  • the impedance matching structure includes a uniform substrate integrated waveguide and a graded substrate integrated waveguide, and the distances between the metal through holes on both sides of the graded substrate integrated waveguide are correspondingly graded. Thereby, the coupling efficiency can be further improved.
  • the radiation phase center of the mode conversion excitation structure coincides with the axial center direction of the mode conversion structure.
  • an embodiment of the present invention provides a terahertz carrier receiving device, including: a terahertz transmission line, a mode conversion structure, a mode excitation structure, a feeding transmission line, and a circuit board; wherein: the terahertz transmission line is used for receiving terahertz Signal; the mode conversion structure includes an inner cavity with an inner wall of metal, and one end of the mode excitation structure and the terahertz transmission line is located in the inner cavity, so that the terahertz signal in the terahertz transmission line is coupled into the mode excitation structure; the mode excitation structure is used for The terahertz signal is converted into an electrical signal to the feeder transmission line; the feeder transmission line is used to transmit the electrical signal to the radio frequency receiving circuit; and the circuit board is used to fix the feeder transmission line and the mode excitation structure, and the mode conversion structure also includes a positioning slot, It is used to insert a part of the circuit board and the mode excitation structure into the inner cavity of the mode conversion structure.
  • the feed transmission lines, mode excitation structures, metal vias are located on the circuit board. Thereby, the coupling efficiency can be further improved.
  • the feeding transmission line, the mode excitation structure, and the metal through hole are located on the package substrate of the RF receiving chip, and the metal through hole part on the package substrate and the corresponding part of the PCB board are pressed together by the boundary of the positioning groove. Thereby, the coupling efficiency can be further improved.
  • the feeding transmission line, the mode excitation structure, and the metal through hole are located on the radio frequency receiving chip, and the metal through hole part on the chip and the corresponding part of the PCB board are pressed together by the boundary of the positioning groove.
  • the coupling efficiency can be further improved.
  • the radio frequency receiving chip further includes an impedance matching structure for matching the impedance between the feeding transmission line and the mode excitation structure.
  • the coupling efficiency can be further improved.
  • multiple metal through holes are distributed on both sides of the impedance matching structure. Thereby, the coupling efficiency can be further improved.
  • the impedance matching structure includes a uniform substrate integrated waveguide and a graded substrate integrated waveguide, and the distances between the metal through holes on both sides of the graded substrate integrated waveguide are correspondingly graded. Thereby, the coupling efficiency can be further improved.
  • the radiation phase center of the mode conversion excitation structure coincides with the axial center direction of the mode conversion structure.
  • FIG. 1 is a schematic diagram of a terahertz cable provided in an embodiment of the present invention applied to a data center;
  • FIG. 2 is a schematic structural diagram of an apparatus for transmitting and receiving a terahertz carrier provided by an embodiment of the present invention
  • FIG. 3 is a schematic three-dimensional structural diagram of a terahertz carrier transceiver device provided by an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the size of a terahertz carrier transceiver device provided by an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of electric field mode distribution of electromagnetic simulation provided by an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of transmission parameters of electromagnetic simulation provided by an embodiment of the present invention.
  • FIG. 7 is a schematic three-dimensional structural diagram of another terahertz carrier transceiver device according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of the size of another terahertz carrier transceiver according to an embodiment of the present invention.
  • FIG. 9 is a schematic diagram of an electric field mode distribution of another electromagnetic simulation provided by an embodiment of the present invention.
  • FIG. 10 is a schematic diagram of transmission parameters of another electromagnetic simulation provided by an embodiment of the present invention.
  • FIG. 11 is a side view of another terahertz carrier transceiver device provided by an embodiment of the present invention.
  • FIG. 12 is a side view of another terahertz carrier transceiver device according to an embodiment of the present invention.
  • the terahertz carrier transmission device and the receiving device provided by the embodiments of the present invention can be applied to high-speed interconnection scenarios, such as data centers.
  • the terahertz carrier sending and receiving apparatus 101 (also referred to as a terahertz cable) can be applied to data transmission between devices in a data center, for example, between each service device 102 in a cabinet and a top-of-rack switch 103 , applied between the service device 102 and the top-of-rack switch 103 of another cabinet, or between the top-of-the-rack switch 103 and the aggregation switch 104 .
  • FIG. 2 is a schematic structural diagram of a device for transmitting and receiving a terahertz carrier provided by an embodiment of the present invention.
  • the device includes a housing encapsulation structure 201 in which a printed circuit board (PCB) 202 is encapsulated.
  • the baseband signal processing chip 203 , the radio frequency sending chip 204 and the radio frequency receiving chip 205 are mounted on the PCB board.
  • the shell encapsulation structure 201 also encapsulates an electromagnetic coupling structure mode conversion structure 206 to connect the radio frequency transceiver chips 204 and 205 and the terahertz transmission line 207 .
  • the service signal to be sent is processed by the baseband signal processing chip 203 and then enters the radio frequency sending chip 204.
  • the electromagnetic coupling structure 206 is used to couple the carrier signal output by the radio frequency sending chip 204 to the terahertz transmission line 207 for sending.
  • the electromagnetic coupling structure 206 couples the carrier signal received from the terahertz transmission line 207 to the radio frequency receiving chip 205, and the baseband signal processing chip 203 processes to obtain a service signal.
  • Electromagnetic coupling structures typically include feed transmission lines, mode excitation structures, and mode conversion structures. The coupling structure can be implemented on the PCB board, or directly coupled on the chip, or coupled on the packaging structure of the chip.
  • the baseband signal processing chip 203, the radio frequency sending chip 204 and the radio frequency receiving chip 205 may also be packaged in the service equipment.
  • the radio frequency sending chip 204 and the radio frequency receiving chip 205 may also be implemented as one chip.
  • the two-way transmission and reception can also be realized by using a single terahertz transmission line 207, and two different terahertz frequencies are respectively used to carry terahertz signal transmission in two directions.
  • a mode conversion structure 206 can be used for bidirectional coupling, which can not only couple the carrier signal to be sent into the terahertz transmission line, but also couple the carrier signal received in the terahertz transmission line into the radio frequency receiving chip.
  • FIG. 3 is a schematic structural diagram of a terahertz carrier transceiver provided by an embodiment of the present invention, in which the feed transmission line and the mode excitation structure are packaged on the PCB board 301, and the electromagnetic signals in the radio frequency transceiver chip are bound by binding Chip packaging methods such as Bonding wire or Flip chip are guided to the PCB board.
  • the device shown in FIG. 3 includes the following structures.
  • the carrier signal of the RF transmitting chip 302 is fed into the uniform substrate integrated waveguide 304 through the feeding microstrip line 303 with a gradient structure, thereby realizing the quasi-TEM mode of the carrier signal in the planar feeding microstrip structure to the uniform substrate. Quasi-TE 10 mode conversion of carrier signals in chip-integrated waveguides. Further, the uniform-segment substrate integrated waveguide 304 is connected to the graded substrate integrated waveguide 305 to better match the impedance of the mode excitation structure 306 .
  • the mode excitation structure 306 in FIG. 3 is a forward and reverse linearly graded slot end-fire antenna.
  • the inner cavity of the mode conversion structure 312 is cylindrical, the inner wall is metal, a rectangular positioning slot 311 is opened at the eccentric position at one end, and the terahertz transmission line 313 can be inserted at the other end.
  • the carrier signal emitted by the end-fire antenna can be coupled to the terahertz transmission line 313 inserted into the cavity.
  • metal through holes 307 are arranged on both sides of the substrate-integrated waveguides 304/305 and the end-fire antenna 306, metal through holes 307 are arranged.
  • the position of the metal through hole is such that when the PCB board is inserted into the positioning groove, the boundary of the positioning groove is pressed against the metal through hole.
  • the boundary of the positioning groove 311 is also made of metal material, which reduces the leakage of electromagnetic waves in the cavity of the mode conversion structure 312 and improves the coupling efficiency of the electromagnetic signal of the end-fire antenna to the terahertz transmission line.
  • a graded substrate is used to integrate waveguide feeds to improve the broadband range of impedance matching.
  • the feed gradient section of the gradient slot end-fire antenna must meet:
  • the parameters include: the width Ws between the integrated waveguide holes of the feed graded section substrate, the width Wu between the integrated waveguide holes of the uniform section substrate, the number of metal through holes in the graded section is N, the gradient distance iy of the graded metal through holes , Feeding gradient segment substrate integrated waveguide length Tl, metal through hole diameter d, metal through hole spacing iz.
  • the gradient slot end-fire antenna and the metal through holes on both sides should meet the following requirements:
  • the parameters include: the bottom patch width W1 of the forward and reverse linear gradient slot antenna, the width Ws between the integrated waveguide holes of the feed gradient segment substrate, the length L of the forward and reverse linear gradient slot antenna, and the two sides of the forward and reverse linear gradient slot antenna.
  • the number of metal through holes arranged is M, the diameter of metal through holes d, the spacing of metal through holes iz,
  • the parameters include: the height Ct of the metal mode converter slot, the thickness St of the middle layer of the PCB board, the thickness Mt of the upper and lower metal layers on the PCB board, the slot depth Cl of the metal mode converter, and the length L of the positive and negative linear gradient slot antenna.
  • the embodiment of the present invention reduces the leakage of electromagnetic waves in the mode conversion structure, and improves the coupling efficiency of the electromagnetic signal of the end-fire antenna to the terahertz transmission line.
  • the coupling efficiency can be seen from the distribution of electric field patterns from electromagnetic simulations. Specifically, according to the embodiment shown in FIG. 3 and FIG. 4, the simulation is performed, and a solid-core terahertz transmission line with a circular cross-sectional diameter of 1.65 mm and a material of polytetrafluoroethylene is selected.
  • a schematic diagram of the electric field mode distribution as shown in FIG. 5 can be obtained through electromagnetic simulation.
  • the electromagnetic signal is connected from the microstrip line 303 on the PCB to the integrated waveguide 304 on the chip substrate, which can realize the quasi-TEM mode to the quasi-TE 10 mode, and then from the integrated waveguide 304 on the substrate on the PCB board to be filled with metal through holes at both ends of the positive
  • the inverse linear gradient slot mode excitation structure 306 is fed to excite the transmission main mode TE11 mode in the circular metal mode conversion structure 312, and then the electromagnetic wave is coupled to the solid core terahertz with a tapered end face through the mode conversion structure 312.
  • the mode conversion structure on the PCB can realize the efficient mode field conversion of the electromagnetic signal from the RF transceiver chip to the terahertz transmission line.
  • an embodiment of the present invention further provides another terahertz carrier transceiving device.
  • the device adopts a mode conversion structure 712 with a rectangular cross-section, and is connected to a cylindrical waveguide 714 through a section of a square-circle conversion structure 713 .
  • the electromagnetic signals in the radio frequency transceiver chip are guided to the PCB board through chip packaging methods such as Bonding wire or Flip chip.
  • the device shown in FIG. 7 specifically includes the following structures.
  • the carrier signal of the radio frequency transmitting chip is fed into the uniform substrate integrated waveguide 703 through the feeding microstrip line 702 with the gradient structure, so as to realize the quasi-TEM mode of the carrier signal in the planar feeding microstrip structure to the uniform substrate Quasi-TE 10 mode conversion of carrier signals in integrated waveguides.
  • the uniform segment substrate integrated waveguide 703 is connected to the graded substrate integrated waveguide 704 to better match the impedance of the mode excitation structure 705 .
  • the mode excitation structure 705 in FIG. 3 is a forward and reverse linearly graded slot end-fire antenna.
  • the cavity cross section of the mode conversion structure 712 is rectangular, the inner wall is metal, a rectangular positioning slot 711 is opened at an eccentric position at one end, and a terahertz transmission line 715 can be inserted into the cylindrical waveguide 714 at the other end.
  • the carrier signal emitted by the end-fire antenna can be coupled to the terahertz transmission line 715 inserted into the cavity.
  • metal through holes 706 are arranged on both sides of the substrate-integrated waveguide 703/704 and the end-fire antenna 705.
  • the position of the metal through hole is such that when the PCB board is inserted into the positioning groove, the boundary of the positioning groove is pressed against the metal through hole.
  • the boundary of the positioning groove 711 is also made of metal material, which reduces the leakage of electromagnetic waves in the cavity of the mode conversion structure 712 and improves the coupling efficiency of the electromagnetic signal of the end-fire antenna to the terahertz transmission line.
  • a graded substrate is used to integrate waveguide feeds to improve the broadband range of impedance matching.
  • the schematic diagram of the electric field mode distribution as shown in FIG. 9 can be obtained.
  • the electromagnetic signal is connected from the microstrip line on the PCB to the integrated waveguide on the chip substrate, which can realize the quasi-TEM mode to the quasi-TE 10 mode, and then from the substrate integrated waveguide on the PCB to the positive and negative linear gradients filled with metal through holes at both ends
  • the slot mode excitation structure is fed, and the positive and negative linear gradient slot mode excitation structure on the PCB board is used to excite the transmission main mode TE 10 mode in the rectangular metal mode conversion structure, and then the electromagnetic wave is coupled to the circle through the square-circle conversion structure mode conversion structure.
  • the waveguide In the waveguide, it is converted to TE 11 mode, and then the solid-core terahertz transmission line with a tapered end face is inserted into the other end of the circular waveguide to realize the main mode transmission of HE 11 mode. It can be seen from the distribution of the electric field mode through the PCB board
  • the up-mode conversion structure can realize the efficient mode-field conversion of electromagnetic signals from the RF transceiver chip to the terahertz transmission line.
  • the transmission parameter from the PCB microstrip line to the solid-core THz transmission line is greater than -2.4dB in the frequency range of 120-160GHz, and the reflection parameter is less than -12dB, which indicates that It has high coupling efficiency in a wide frequency band from the RF transceiver chip to the terahertz transmission line, which is conducive to improving the transmission distance and communication rate of the system.
  • FIG. 11 it is a side view of a terahertz carrier transceiver device provided by an embodiment of the present invention, wherein a coupling device with an end-fire function is designed on the packaging substrate 1108 of the chip 1102, so that electromagnetic signals do not need to pass through the chip.
  • the package substrate layer and the solder ball pins on the PCB board 1101 directly realize the coupling of the chip signal to the solid-core medium transmission line on the package substrate.
  • the RF transmission chip 1102 feeds the carrier signal into the uniform substrate integrated waveguide 1104 through the feeding microstrip line 1103 with the graded structure, and then is connected with the graded substrate integrated waveguide 1105 to better connect with the mode excitation structure 1106. Impedance matching.
  • One end of the mode conversion structure 1112 is provided with a rectangular positioning slot 1111 at the eccentric position, and the other end is inserted into the terahertz transmission line 1113 .
  • the carrier signal emitted by the end-fire antenna can be coupled to the terahertz transmission line 1113 inserted into the cavity.
  • metal through holes 1107 are arranged on both sides of the substrate-integrated waveguide 1104/1105 and the end-fire antenna 1106, metal through holes 1107 are arranged. The specific design and constraints are similar to those described above and will not be repeated here.
  • FIG. 12 it is a side view of another terahertz carrier transceiver device provided by an embodiment of the present invention, wherein a coupling device with an end-fire function is designed on the chip 1202, so that the electromagnetic signal not only does not need to pass through the package of the chip
  • the solder ball pins on the base layer and the PCB board also do not need to pass through the structure between the RF transceiver chip and the package substrate, but directly couple the electromagnetic signal from the chip to the metal mode conversion structure, and then to the solid-core dielectric transmission line.
  • the radio frequency transmitting chip 1202 feeds the carrier signal into the uniform substrate integrated waveguide 1204 through the feeding microstrip line 1203 with the graded structure, and then is connected with the graded substrate integrated waveguide 1205 to better connect with the mode excitation structure 1206. Impedance matching.
  • One end of the mode conversion structure 1212 is provided with a rectangular positioning slot 1211 at an eccentric position, and the other end is inserted into the terahertz transmission line 1213 .
  • the carrier signal emitted by the end-fire antenna can be coupled to the terahertz transmission line 1213 inserted into the cavity.
  • metal through holes 1207 are arranged on both sides of the substrate-integrated waveguide 1204/1205 and the end-fire antenna 1206, metal through holes 1207 are arranged. The specific design and constraints are similar to those described above and will not be repeated here.
  • FIGS. 11 and 12 have high coupling efficiency in a wide frequency band from the radio frequency transceiver chip to the terahertz transmission line, which is beneficial to improve the transmission distance and communication rate of the system.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本发明公开了一种太赫兹载波发送装置和接收装置，包括：馈电传输线、模式激励结构、模式转换结构、太赫兹传输线、电路板。其中馈电传输线用于接收射频发送电路发出的电信号，模式激励结构用于激励起太赫兹信号，模式转换结构中包括一个内壁为金属的内腔，使模式激励结构激励起的太赫兹信号耦合进太赫兹传输线，电路板用于固定馈电传输线和模式激励结构，模式转换结构还包括定位槽，将电路板的一部分和模式激励结构插入到模式转换结构的内腔中，在模式激励结构两侧分布有多个金属通孔，定位槽的边界为金属并压合在模式激励结构两侧的金属通孔上。本发明实现了高效的电磁耦合，提高了数据的传输带宽。

Description

太赫兹载波发送装置、接收装置 技术领域
本发明涉及太赫兹通信领域，尤其涉及一种太赫兹载波发送装置和接收装置。
背景技术
随着网络数据中心流量的高速增长，对数据中心内部设备间传输速率的要求越来越高，数据中心机柜之间以及机柜内部均需要大量的高速线缆进行互连。目前，一种连接方式是直连铜缆，但随着工作频率提升，增加的金属损耗会很大程度上限制铜缆的传输距离和速率。另一种连接方式是有源光缆，但由于收发需要进行光电转换，功耗和成本都大幅增加。
目前还有一种互联方式，利用太赫兹(Tera-Hertz，THz)频段为载波，以太赫兹传输线为传输媒质，在数据中心以及其它短距高速通信场景中进行互连。在太赫兹传输线与通信设备的接口处，通常采用微带线将射频收发芯片中太赫兹信号引导进入金属连接器的谐振腔中，将电磁信号耦合到太赫兹传输线。这种连接器的会引入反射谐振点，从而大大降低耦合效率和工作带宽。
发明内容
本发明实施例提供一种太赫兹载波发送装置和一种太赫兹载波接收装置，以实现高效的电磁耦合，提高数据的传输带宽。
第一方面，本发明实施例提供了一种太赫兹载波发送装置，包括：馈电传输线、模式激励结构、模式转换结构、太赫兹传输线、电路板；其中：馈电传输线用于接收射频发送电路发出的电信号，并传输到模式激励结构中；模式激励结构用于根据收到的电信号，激励起太赫兹信号；模式转换结构中包括一个内壁为金属的内腔，模式激励结构和太赫兹传输线的一端位于内腔中，使模式激励结构激励起的太赫兹信号耦合进太赫兹传输线；太赫兹传输线，用于传输太赫兹信号；以及电路板用于固定馈电传输线和模式激励结构，模式转换结构还包括定位槽，用于将电路板的一部分和模式激励结构插入到模式转换结构的内腔中，在模式激励结构两侧分布有多个金属通孔，定位槽的边界为金属并压合在模式激励结构两侧的金属通孔上。这样就实现高效的电磁耦合，提高数据的传输带宽。
在一个可能的设计中，馈电传输线、模式激励结构、金属通孔位于电路板上。从而可进一步提高耦合效率。
在又一个可能的设计中，馈电传输线、模式激励结构、金属通孔位于射频发送芯片的封装基板上，封装基板上的金属通孔部分和PCB板的相应部分被定位槽边界压合。从而可进一步提高耦合效率。
在又一个可能的设计中，馈电传输线、模式激励结构、金属通孔位于射频发送芯片上，芯片上的金属通孔部分和PCB板的相应部分被定位槽边界压合。从而可进一步提高耦合效率。
在又一个可能的设计中，射频发送芯片还包括阻抗匹配结构，用于匹配馈电传输线与模式激励结构之间阻抗。从而可进一步提高耦合效率。
在又一个可能的设计中，阻抗匹配结构的两侧分布有多个金属通孔。从而可进一步提高耦合效率。
在又一个可能的设计中，阻抗匹配结构包括均匀基片集成波导和渐变基片集成波导，渐变基片集成波导两侧的金属通孔之间的距离也相应渐变。从而可进一步提高耦合效率。
在又一个可能的设计中，模式转换激励结构的辐射相位中心与模式转换结构的轴心方向相重合。从而可进一步提高耦合效率。
第二方面，本发明实施例提供了一种太赫兹载波接收装置，包括：太赫兹传输线、模式转换结构、模式激励结构、馈电传输线、电路板；其中：太赫兹传输线，用于接收太赫兹信号；模式转换结构中包括一个内壁为金属的内腔，模式激励结构和太赫兹传输线的一端位于内腔中，使太赫兹传输线中的太赫兹信号耦合进模式激励结构中；模式激励结构用于将太赫兹信号转为电信号到馈电传输线；馈电传输线用于将电信号传输到射频接收电路中；以及电路板用于固定馈电传输线和模式激励结构，模式转换结构还包括定位槽，用于将电路板的一部分和模式激励结构插入到模式转换结构的内腔中，在模式激励结构两侧分布有多个金属通孔，定位槽的边界为金属并压合在模式激励结构两侧的金属通孔上。这样就实现高效的电磁耦合，提高数据的传输带宽。
在又一个可能的设计中，馈电传输线、模式激励结构、金属通孔位于电路板上。从而可进一步提高耦合效率。
在又一个可能的设计中，馈电传输线、模式激励结构、金属通孔位于射频接收芯片的封装基板上，封装基板上的金属通孔部分和PCB板的相应部分被定位槽边界压合。从而可进一步提高耦合效率。
在又一个可能的设计中，馈电传输线、模式激励结构、金属通孔位于射频接收芯片上，芯片上的金属通孔部分和PCB板的相应部分被定位槽边界压合。从而可进一步提高耦合效率。
在又一个可能的设计中，射频接收芯片还包括阻抗匹配结构，用于匹配馈电传输线与模式激励结构之间阻抗。从而可进一步提高耦合效率。
在又一个可能的设计中，阻抗匹配结构的两侧分布有多个金属通孔。从而可进一步提高耦合效率。
在又一个可能的设计中，阻抗匹配结构包括均匀基片集成波导和渐变基片集成波导，渐变基片集成波导两侧的金属通孔之间的距离也相应渐变。从而可进一步提高耦合效率。
在又一个可能的设计中，模式转换激励结构的辐射相位中心与模式转换结构的轴心方向相重合。从而可进一步提高耦合效率。
附图说明
图1为本发明实施例提供的太赫兹电缆应用于数据中心的示意图；
图2为本发明实施例提供的太赫兹载波发送和接收装置的结构示意图；
图3为本发明实施例提供的太赫兹载波收发装置的立体结构示意图；
图4为本发明实施例提供的太赫兹载波收发装置的尺寸示意图；
图5为本发明实施例提供的电磁仿真的电场模式分布示意图；
图6为本发明实施例提供的电磁仿真的传输参量示意图；
图7为本发明实施例提供的另一太赫兹载波收发装置的立体结构示意图；
图8为本发明实施例提供的另一太赫兹载波收发装置的尺寸示意图；
图9为本发明实施例提供的另一电磁仿真的电场模式分布示意图；
图10为本发明实施例提供的另一电磁仿真的传输参量示意图；
图11为本发明实施例提供的另一太赫兹载波收发装置的侧视图；
图12为本发明实施例提供的另一太赫兹载波收发装置的侧视图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
本发明实施例提供的太赫兹载波发送装置、接收装置可以应用到高速互联的场景，如数据中心等。如图1所示，太赫兹载波发送、接收装置101(也可称为太赫兹电缆)可以应用于数据中心各设备间数据传输，例如应用于机柜内各业务设备102与柜顶交换机103之间、应用于业务设备102与另一机柜的柜顶交换机103之间、或者应用于柜顶交换机103与汇集交换机104之间。
本发明实施例提供的一种太赫兹载波发送和接收装置的结构示意图如图2所示。所述装置包括外壳封装结构201，外壳封装结构中封装了印刷电路板(PCB)202。PCB板上安装了基带信号处理芯片203、射频发送芯片204和射频接收芯片205。外壳封装结构201中还封装了电磁耦合结构模式转换结构206，连接射频收发芯片204、205与太赫兹传输线207。
发送消息时，待发送的业务信号通过基带信号处理芯片203进行处理后进入到射频发送芯片204，电磁耦合结构206用于将射频发送芯片204输出的载波信号耦合到太赫兹传输线207中发送出去。另一方面，接收消息时，电磁耦合结构206将从太赫兹传输线207接收的载波信号耦合到射频接收芯片205中，并由基带信号处理芯片203进行处理得到业务信号。电磁耦合结构通常包括馈电传输线、模式激励结构、以及模式转换结构。可以在PCB板上实现耦合结构，也可以在芯片上直接耦合，或者在芯片的封装结构上耦合等方式。
基带信号处理芯片203、射频发送芯片204和射频接收芯片205也可以封装在业务设备中。射频发送芯片204和射频接收芯片205也可以合为一个芯片实现。双向的收发也可以用一根太赫兹传输线207实现，分别用不同的两个太赫兹频率承载两个方向的太赫兹信号传输。在这种情况下，一个模式转换结构206可以用于双向耦合，既可将待发送的载波信号耦合进太赫兹传输线，又可将太赫兹传输线中接收的载波信号耦合进射频接收芯片。
如图3所示为本发明实施例提供的太赫兹载波收发装置的一个结构示意图，其中，馈电传输线、模式激励结构都封装在PCB板301上，射频收发芯片芯片中的电磁信号通过绑定(Bonding wire)或倒装(Flip chip)等芯片封装方式被引导到PCB板上。图3所示的装置包括如下几部分结构。
通过带有渐变结构的馈电微带线303将射频发送芯片302的载波信号馈入到均匀基片集成波导304中，从而实现了平面馈电微带线结构中载波信号准TEM模式到均匀基片集成波导中载波信号准TE 10模式的转换。进一步，均匀段基片集成波导304与渐变基片集成波导305相连，以更好地与模式激励结构306的阻抗匹配。图3中模式激励结构306为正反线性渐变槽端射天线。
模式转换结构312的内腔为圆柱形，内壁为金属，在其一端的偏心位置处开有矩形定位 槽311，另一端可插入太赫兹传输线313。将PCB板301插入到定位槽311中，即可将端射天线发出的载波信号耦合到插入内腔的太赫兹传输线313中。
在基片集成波导304/305和端射天线306的两侧，排布有金属通孔307。金属通孔的位置使得当PCB板插入定位槽时定位槽边界压合金属通孔上。而定位槽311的边界也是金属材料，这样，降低了电磁波在模式转换结构312内腔泄露，提高了端射天线的电磁信号到太赫兹传输线的耦合效率。采用渐变基片集成波导馈电以提高阻抗匹配的宽带范围。
为更好地实现载波信号耦合，馈电渐变段、金属通孔、定位槽的一些相关尺寸需满足相关的条件。参考附图4，相关尺寸及需满足的条件如下所述。
渐变槽端射天线的馈电渐变段需满足：
Ws＝Wu+N×iy，Tl＝N×(d+iz)        (公式1)
其中的参数包括：馈电渐变段基片集成波导通孔间宽度Ws、均匀段基片集成波导通孔间宽度Wu、渐变段中金属通孔个数为N、渐变金属通孔的渐变距离iy、馈电渐变段基片集成波导长度Tl、金属通孔直径d、金属通孔间距iz。
渐变槽端射天线及其两侧排布金属通孔需满足：
Wl≤Ws，L＝M×(d+iz)        (公式2)
其中的参数包括：正反线性渐变槽天线的底部贴片宽度Wl、馈电渐变段基片集成波导通孔间宽度Ws、正反线性渐变槽天线的长度L、正反线性渐变槽天线两侧排布金属通孔个数为M、金属通孔直径d、金属通孔间距iz、
金属模式转换器与PCB的位置关系需满足：
Ct＝St+2×Mt，Cl≥L         (公式3)
其中的参数包括：金属模式转换器开槽的高度Ct、PCB板中间层厚度St、PCB板上下金属层厚度Mt、金属模式转换器的开槽深度Cl、正反线性渐变槽天线的长度L。
本发明实施例降低了电磁波在模式转换结构中的泄露，提高了端射天线的电磁信号到太赫兹传输线的耦合效率。例如，通过电磁仿真的电场模式分布图可看出耦合效率。具体的，按照上述图3和图4所示实施例进行仿真，选取圆形截面直径为1.65mm、材料为聚四氟乙烯的实芯太赫兹传输线。相关尺寸包括：直径为Cd＝1.65mm，均匀段基片集成波导通孔间宽度Wu＝1.00mm、馈电渐变段基片集成波导通孔间宽度Ws＝1.65mm、馈电渐变段基片集成波导长度Tl＝0.80mm、金属通孔直径d＝0.25mm、金属通孔间距iz＝0.15mm、渐变金属通孔的渐变距离iy＝0.325mm、正反线性渐变槽天线的长度L＝3.60mm、正反线性渐变槽天线的底部贴片宽度Wl＝1.18mm、渐变段中金属通孔个数为N＝2、正反线性渐变槽天线两侧排布金属通孔个数为M＝9、PCB板中间层厚度为St＝0.127mm、PCB板上下金属层厚度为Mt＝0.018mm、金属模式转换器开槽的高度为Ct＝0.163mm、金属模式转换器的开槽深度为Cl＝3.90mm。
按照上述相关尺寸，通过电磁仿真可以得到如图5所示的电场模式分布示意图。电磁信号从PCB板上微带线303与片上基片集成波导304相连，可以实现准TEM模式到准TE 10模式，再从PCB板上基片集成波导304为两端排满金属通孔的正反线性渐变槽模式激励结构306进行馈电，激励起圆形金属模式转换结构312中的传输主模TE 11模式，然后再通过模式转换结构312将电磁波耦合到端面为锥形的实芯太赫兹传输线313中，实现HE 11模式的主模传输，从电场模式分布中可以看出通过PCB板上模式转换结构可以实现电磁信号从射频收发芯片到太赫兹传输线的高效模场转换。
如图6所示，通过电磁仿真模拟还可以得到从PCB上的馈电微带线到实芯太赫兹传输线 的传输参量在120-160GHz的频率范围内大于-2.98dB，散射参量小于-10.2dB，这表明从射频收发芯片到太赫兹传输线之间很宽频带内具有很高的耦合效率，有利于提升系统传输的距离及通信速率。
如图7所示，本发明实施例还提供另一种太赫兹载波收发装置，图中装置采用内腔为矩形截面的模式转换结构712，通过一段方圆转换结构713连接到圆柱形波导714中。同样，射频收发芯片芯片中的电磁信号通过绑定(Bonding wire)或倒装(Flip chip)等芯片封装方式被引导到PCB板上。具体的，图7所示的装置具体包括如下几部分结构。
通过带有渐变结构的馈电微带线702将射频发送芯片的载波信号馈入到均匀基片集成波导703中，从而实现了平面馈电微带线结构中载波信号准TEM模式到均匀基片集成波导中载波信号准TE 10模式的转换。进一步，均匀段基片集成波导703与渐变基片集成波导704相连，以更好地与模式激励结构705的阻抗匹配。图3中模式激励结构705为正反线性渐变槽端射天线。
模式转换结构712的内腔横截面为长方形，内壁为金属，在其一端的偏心位置处开有矩形定位槽711，另一端圆柱形波导714中可插入太赫兹传输线715。将PCB板701插入到定位槽711中，即可将端射天线发出的载波信号耦合到插入内腔的太赫兹传输线715中。
在基片集成波导703/704和端射天线705的两侧，排布有金属通孔706。金属通孔的位置使得当PCB板插入定位槽时定位槽边界压合金属通孔上。而定位槽711的边界也是金属材料，这样，降低了电磁波在模式转换结构712内腔泄露，提高了端射天线的电磁信号到太赫兹传输线的耦合效率。采用渐变基片集成波导馈电以提高阻抗匹配的宽带范围。
同样，为更好地实现载波信号耦合，馈电渐变段、金属通孔、定位槽的一些相关尺寸需满足相关的条件。参考附图8，相关尺寸及需满足的条件与前述公式1至公式3相同，不再赘述。
同样，可对上述图7和图8所示实施例进行仿真。具体地，相关尺寸包括：均匀段基片集成波导通孔间宽度Wu＝1.05mm、馈电渐变段基片集成波导通孔间宽度Ws＝0.83mm、馈电渐变段基片集成波导长度Tl＝0.80mm、金属通孔直径d＝0.25mm、金属通孔间距iz＝0.15mm、渐变金属通孔的渐变距离iy＝0.055mm、正反线性渐变槽天线的长度L＝2.40mm、正反线性渐变槽天线的底部贴片宽度Wl＝0.62mm、渐变段中金属通孔个数为N＝2、正反线性渐变槽天线两侧排布均匀金属通孔个数为M＝4、PCB板中间层厚度为St＝0.127mm、PCB板上下金属层厚度为Mt＝0.018mm、矩形金属连接器横截宽度为Rb＝0.83mm、金属模式转换器开槽的高度为Ct＝0.163mm、金属模式转换器的开槽深度为Cl＝2.70mm。
通过电磁仿真计算，按照上述相关尺寸，可以得到如图9所示的电场模式分布示意图。电磁信号从PCB板上微带线与片上基片集成波导相连，可以实现准TEM模式到准TE 10模式，再从PCB板上基片集成波导为两端排满金属通孔的正反线性渐变槽模式激励结构进行馈电，通过PCB板上正反线性渐变槽模式激励结构激励起矩形金属模式转换结构中的传输主模TE 10模式，然后再通过方圆转换结构模式转换结构将电磁波耦合到圆波导中，转换为TE 11模式，再将端面为锥形的实芯太赫兹传输线插入到圆波导的另一端中，实现HE 11模式的主模传输，从电场模式分布中可以看出通过PCB板上模式转换结构可以实现电磁信号从射频收发芯片到太赫兹传输线的高效模场转换。
如图10中所示，通过电磁仿真模拟还可以得到从PCB微带线上到实芯太赫兹传输线的传输参量在120-160GHz的频率范围内大于-2.4dB，反射参量小于-12dB,这表明从射频收发芯 片到太赫兹传输线之间很宽频带内具有很高的耦合效率，有利于提升系统传输的距离及通信速率。
如图11所示，为本发明实施例提供的一种太赫兹载波收发装置的一个侧视图，其中具有端射功能的耦合装置设计在芯片1102的封装基板1108上，这样电磁信号不需要经过芯片的封装基板层和PCB板1101上的焊球引脚而直接在封装基板上实现芯片信号到实芯介质传输线中的耦合。
射频发送芯片1102通过带有渐变结构的馈电微带线1103将载波信号馈入到均匀基片集成波导1104中，进而与渐变基片集成波导1105相连，以更好地与模式激励结构1106的阻抗匹配。模式转换结构1112的一端的偏心位置处开有矩形定位槽1111，另一端插入太赫兹传输线1113。将PCB板1101和封装基板1108插入到定位槽1111中，即可将端射天线发出的载波信号耦合到插入内腔的太赫兹传输线1113中。在基片集成波导1104/1105和端射天线1106的两侧，排布有金属通孔1107。具体的设计及约束条件与前述类似，不再赘述。
如图12所示，为本发明实施例提供的另一种太赫兹载波收发装置的一个侧视图，其中具有端射功能的耦合装置设计在芯片1202上，这样电磁信号不但不需要经过芯片的封装基本层和PCB板上的焊球引脚，也不需要经过射频收发芯片与封装基板之间的结构，而直接从芯片将电磁信号耦合到金属模式转换结构中，再到实芯介质传输线中。
射频发送芯片1202通过带有渐变结构的馈电微带线1203将载波信号馈入到均匀基片集成波导1204中，进而与渐变基片集成波导1205相连，以更好地与模式激励结构1206的阻抗匹配。模式转换结构1212的一端的偏心位置处开有矩形定位槽1211，另一端插入太赫兹传输线1213。将PCB板1201和封装基板1208，以及射频收发芯片1202一起插入到定位槽1211中，即可将端射天线发出的载波信号耦合到插入内腔的太赫兹传输线1213中。在基片集成波导1204/1205和端射天线1206的两侧，排布有金属通孔1207。具体的设计及约束条件与前述类似，不再赘述。
上述图11和12所示实施例从射频收发芯片到太赫兹传输线之间很宽频带内具有很高的耦合效率，有利于提升系统传输的距离及通信速率。
尽管在此结合各实施例对本发明进行了描述，然而，在实施所要求保护的本发明过程中，本领域技术人员通过查看所述附图、公开内容、以及所附权利要求书，可理解并实现所述公开实施例的其他变化。在权利要求中，“包括”(comprising)一词不排除其他组成部分或步骤，“一”或“一个”不排除多个的情况。
尽管结合具体特征及其实施例对本发明进行了描述，显而易见的，可对其进行各种修改和组合。相应地，本说明书和附图仅仅是所附权利要求所界定的本发明的示例性说明，且视为已覆盖本发明范围内的任意和所有修改、变化、组合或等同物。显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (16)

  1. 一种太赫兹载波发送装置，其特征在于，包括：馈电传输线、模式激励结构、模式转换结构、太赫兹传输线、电路板；其中：
    所述馈电传输线用于接收射频发送电路发出的电信号，并传输到模式激励结构中；
    所述模式激励结构用于根据收到的电信号，激励起太赫兹信号；
    所述模式转换结构中包括一个内壁为金属的内腔，所述模式激励结构和所述太赫兹传输线的一端位于内腔中，使所述模式激励结构激励起的太赫兹信号耦合进太赫兹传输线；
    所述太赫兹传输线，用于传输所述太赫兹信号；以及
    所述电路板用于固定所述馈电传输线和所述模式激励结构，所述模式转换结构还包括定位槽，用于将所述电路板的一部分和所述模式激励结构插入到所述模式转换结构的内腔中，在所述模式激励结构两侧分布有多个金属通孔，所述定位槽的边界为金属并压合在所述模式激励结构两侧的金属通孔上。
  2. 如权利要求1所述的太赫兹载波发送装置，其特征在于，所述馈电传输线、模式激励结构、金属通孔位于所述电路板上。
  3. 如权利要求1所述的太赫兹载波发送装置，其特征在于，所述馈电传输线、模式激励结构、金属通孔位于射频发送芯片的封装基板上，所述封装基板上的金属通孔部分和所述PCB板的相应部分被定位槽边界压合。
  4. 如权利要求1所述的太赫兹载波发送装置，其特征在于，所述馈电传输线、模式激励结构、金属通孔位于射频发送芯片上，所述芯片上的金属通孔部分和所述PCB板的相应部分被定位槽边界压合。
  5. 如权利要求1-4任一项所述的太赫兹载波发送装置，其特征在于，所述射频发送芯片还包括阻抗匹配结构，用于匹配所述馈电传输线与所述模式激励结构之间阻抗。
  6. 如权利要求5所述的太赫兹载波发送装置，其特征在于，所述阻抗匹配结构的两侧分布有多个金属通孔。
  7. 如权利要求5或6所述的太赫兹载波发送装置，其特征在于，所述阻抗匹配结构包括均匀基片集成波导和渐变基片集成波导，所述渐变基片集成波导两侧的金属通孔之间的距离也相应渐变。
  8. 如权利要求1-7任一项所述的太赫兹载波发送装置，其特征在于，模式转换激励结构的辐射相位中心与模式转换结构的轴心方向相重合。
  9. 一种太赫兹载波接收装置，其特征在于，包括：太赫兹传输线、模式转换结构、模式激励结构、馈电传输线、电路板；其中：
    所述太赫兹传输线，用于接收太赫兹信号；
    所述模式转换结构中包括一个内壁为金属的内腔，所述模式激励结构和所述太赫兹传输 线的一端位于内腔中，使所述太赫兹传输线中的太赫兹信号耦合进模式激励结构中；
    所述模式激励结构用于将太赫兹信号转为电信号到馈电传输线；
    所述馈电传输线用于将电信号传输到射频接收电路中；以及
    所述电路板用于固定所述馈电传输线和所述模式激励结构，所述模式转换结构还包括定位槽，用于将所述电路板的一部分和所述模式激励结构插入到所述模式转换结构的内腔中，在所述模式激励结构两侧分布有多个金属通孔，所述定位槽的边界为金属并压合在所述模式激励结构两侧的金属通孔上。
  10. 如权利要求9所述的太赫兹载波接收装置，其特征在于，所述馈电传输线、模式激励结构、金属通孔位于所述电路板上。
  11. 如权利要求9所述的太赫兹载波接收装置，其特征在于，所述馈电传输线、模式激励结构、金属通孔位于射频接收芯片的封装基板上，所述封装基板上的金属通孔部分和所述PCB板的相应部分被定位槽边界压合。
  12. 如权利要求9所述的太赫兹载波接收装置，其特征在于，所述馈电传输线、模式激励结构、金属通孔位于射频接收芯片上，所述芯片上的金属通孔部分和所述PCB板的相应部分被定位槽边界压合。
  13. 如权利要求9-12任一项所述的太赫兹载波接收装置，其特征在于，所述射频接收芯片还包括阻抗匹配结构，用于匹配所述馈电传输线与所述模式激励结构之间阻抗。
  14. 如权利要求13所述的太赫兹载波接收装置，其特征在于，所述阻抗匹配结构的两侧分布有多个金属通孔。
  15. 如权利要求13或14所述的太赫兹载波接收装置，其特征在于，所述阻抗匹配结构包括均匀基片集成波导和渐变基片集成波导，所述渐变基片集成波导两侧的金属通孔之间的距离也相应渐变。
  16. 如权利要求9-15任一项所述的太赫兹载波接收装置，其特征在于，模式转换激励结构的辐射相位中心与模式转换结构的轴心方向相重合。
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