WO2022141180A1 - Method for stripping graphene oxide nano membrane from substrate - Google Patents

Method for stripping graphene oxide nano membrane from substrate Download PDF

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WO2022141180A1
WO2022141180A1 PCT/CN2020/141340 CN2020141340W WO2022141180A1 WO 2022141180 A1 WO2022141180 A1 WO 2022141180A1 CN 2020141340 W CN2020141340 W CN 2020141340W WO 2022141180 A1 WO2022141180 A1 WO 2022141180A1
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reduction
chamber
substrate
water
graphene oxide
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PCT/CN2020/141340
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French (fr)
Chinese (zh)
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彭蠡
方文章
沈颖
刘英军
俞丹萍
高超
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杭州高烯科技有限公司
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Priority to PCT/CN2020/141340 priority Critical patent/WO2022141180A1/en
Publication of WO2022141180A1 publication Critical patent/WO2022141180A1/en

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/184Preparation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/194After-treatment
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/198Graphene oxide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

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  • the invention relates to the field of nanomaterials, in particular to a method for peeling graphene oxide nanofilm from a substrate.
  • graphene oxide-based high-performance graphene-based macroscopic assembled films have been widely used in electrical, thermal, magnetic, optical and other fields.
  • the sub-micron thick graphene film has a great interlayer separation structure, and its stability is poor in a high temperature operating environment, and at the same time it seriously reduces the material The limit performance;
  • the macroscopically assembled graphene thick film and the substrate do not have good adhesion, so they cannot be used in microelectronic components.
  • an independent support for macro-assembled nano-thick graphene films is needed.
  • the primitive of graphene thick films it provides basic research materials for the structural control of macro-assembled graphene thick films; on the other hand, it assists graphite oxide.
  • the graphene-based graphene assembly film has penetrated into the field of microelectronic devices, greatly breaking through its application limitations, and has won a place in the application field of CVD-based single-layer graphene.
  • the object of the present invention is to provide a method for peeling graphene oxide nanofilm from a substrate in view of the deficiencies of the prior art.
  • the object of the present invention is achieved through the following technical solutions: a method for peeling off a graphene oxide nanofilm from a substrate, wherein the substrate is a rigid substrate with a porosity greater than 60%, and the graphene oxide nanofilm has a thickness of 20% -100nm; the method is: place it in a reduction chamber with HI steam for chemical reduction, and reduce for more than 10 minutes in an environment where the concentration of HI is above 0.3g/L and the concentration of water vapor is below 0.07g/L, Graphene oxide is automatically exfoliated from the substrate.
  • HI steam with low water vapor content can be directly input, or an evaporation chamber communicated with the reduction chamber can be used to vaporize the hydroiodic acid, so as to input the HI steam into the reduction chamber.
  • the reduction chamber and the evaporation chamber are located in the same closed cavity, and the evaporation chamber is located below the reduction chamber, and the evaporation chamber is located in an oil bath or a water bath with a temperature of 80-120 degrees Celsius;
  • the top of the reduction chamber is a condensation zone, and the temperature of the condensation zone is controlled at 0-40°C (usually at room temperature).
  • the hydriodic acid solution evaporates into HI vapor and water vapor.
  • the water vapor condenses at the top, which reduces the water vapor content in the cavity, while the condensation temperature of HI is lower, and it remains gaseous.
  • a water-absorbing material is arranged in the condensation area to absorb water vapor and condensed water, so as to prevent the condensed water from re-evaporating after falling back.
  • the water-absorbing materials are: porous and strongly water-absorbing materials such as water-absorbing filter paper and superabsorbent resin, and strong water-absorbing chemicals such as calcium chloride and phosphorus pentoxide.
  • an HI-resistant rack is provided in the reduction chamber for loading the substrate, such as a PTFE mesh rack, a hollow glass rack, and the like.
  • the reduction chamber and the evaporation chamber are each located in a closed cavity. And the two closed cavities are communicated through a condenser pipe; the condenser pipe condenses the water vapor evaporated in the evaporation chamber, and returns to the evaporation chamber.
  • the iodic acid solution is evaporated into HI vapor and water vapor, and the water vapor is condensed in the condenser tube and refluxed to the evaporation chamber, while the condensation temperature of HI is lower, and it remains gaseous.
  • the condensation temperature of HI is lower, and it remains gaseous.
  • both the evaporation chamber and the reduction chamber are located in an oil bath or a water bath with a temperature of 80-120 degrees Celsius.
  • the temperature of the reduction chamber is lower than that of the evaporation chamber, which is beneficial to
  • the hydrogen iodide gas diffuses rapidly toward the reduction chamber.
  • the existence of the temperature difference will cause a pressure difference on both sides, and then the hydrogen iodide with higher mass density will be distributed in the reduction chamber in the low temperature region.
  • the substrate is anodized aluminum, tetrafluoroethylene filter membrane, glass fiber filter membrane, and the like.
  • this method does not require a transfer agent, which avoids the problems that the strength of the AAO film is insufficient to withstand the weight of the transfer agent after the size of the nanofilm increases and the transfer operation is difficult during the solid phase transfer process, ensuring the integrity of the large-sized film;
  • the complete penetration of hydrogen iodide in the reduction process avoids the non-uniform reduction in the reduction process of the solid phase transfer method and the tearing effect of the shrinkage effect of the solid phase transfer agent on the film, which further ensures the uniformity of the nano-film.
  • Fig. 1 is the stepwise separation process diagram of graphene film and substrate
  • Figure 2 is a graphene oxide membrane (4 inches) obtained by suction filtration on a rigid anodized aluminum filter membrane.
  • Figure 3 is a graphene oxide membrane (4 inches) after separation.
  • Figure A1 is the graphene nanofilm transferred by the solid phase transfer agent.
  • B1-D1 are the non-damaged graphene nanofilms prepared by the transfer agent-free method in the present application (corresponding to Examples 1-3 in sequence);
  • A2-D2 are corresponding enlarged views.
  • Example 4 is a schematic plan view A and a schematic perspective view B of the separation device of Example 1;
  • Fig. 5 is the separation device diagram of embodiment 2;
  • FIG. 6 is a diagram of a separation device of Example 3.
  • the HI vapor is mixed with water vapor, which plays a role in wetting. On the one hand, it hinders the rapid penetration of HI, and on the other hand, it wets the interface and inhibits the interface separation.
  • the asymmetric reduction and penetration of hydriodic acid greatly reduces the contact area and force of the interface agent, and the weak contact interface can be peeled off by solvents such as isopropanol; Cannot be separated from the base.
  • the gas-phase separation method of the patented method is milder and hardly has any strong tearing effect on the film, while the law of solid phase transfer is opposite.
  • the specific performance is as follows: First, AAO is a brittle material. During the operation of the solid phase transfer agent, it will have a weight burden on AAO, which will damage the AAO film or fail to have good coverage continuity, resulting in discontinuous peeling of the solid phase transfer agent. Complete graphene nanofilms cannot be obtained (Fig. 2); however, gas-phase reduction does not have these problems, so perfect large-sized graphene films can be obtained.
  • the solid-phase transfer method may cause strong adhesion between graphene oxide and AAO substrate due to insufficient reduction of graphene, and form hole-type tearing in local areas under the action of cold shrinkage (Figure 3A1-A2). ), while the mild gas-phase transfer method does not have this problem, and a perfect graphene film without any tearing can be obtained (Figure 3B-D).
  • the graphene oxide film has a thickness of 100 nm and an area of 80 ⁇ 5 cm 2 , and is deposited on a rigid tetrafluoroethylene filter membrane with a porosity of 60% by suction filtration .
  • the device as shown in FIGS. 4A-B is used to peel off the graphene oxide film.
  • the graphene oxide film has a thickness of 100 nm and an area of 80 ⁇ 5 cm 2 , and is deposited on a rigid material with a porosity of 60% by suction filtration.
  • tetrafluoroethylene filter membrane (same as in Comparative Example 1).
  • the device includes a cylindrical cavity 3, and the cavity 3 contains a hydroiodic acid solution 2. Above the liquid level of the hydroiodic acid solution, a polytetrafluoroethylene mesh frame 2 is fixed to seal the top cover of the cylindrical cavity. 4 is provided with a water-absorbing filter paper 5 .
  • the lower part of the cylindrical cavity is located in a water bath 1 at 80 degrees Celsius, and the sample to be peeled off is placed on a PTFE mesh frame 2 .
  • the hydroiodic acid solution evaporates into HI vapor and water vapor.
  • the water vapor condenses on the top and is absorbed by the water-absorbing filter paper to reduce the water vapor content in the cavity. Keep gaseous.
  • the volume of the cylindrical cavity 3 is 1 L and the bottom area is 120 cm 2 .
  • the mass concentration of the hydroiodic acid solution in the cavity 3 is 50%, the mass content of HI is 0.42g, and the rest is water (0.42g).
  • Water absorption filter paper (2g) has a water absorption limit of 60% of its mass.
  • the ambient temperature at the upper part of the cavity 3 is 0 degrees Celsius.
  • the hydroiodic acid solution 2 was completely evaporated, and the hydrogen iodide solution contained was reduced to invisible to the naked eye.
  • the condensation of some water droplets was seen on the top layer, and the absorbent paper was hygroscopic and swelled.
  • the water-absorbing filter paper gained 0.44g in weight.
  • the concentration of hydriodic acid remained at 0.33g/L. It is proved that the water vapor content in cavity 3 is below 0.07g/L.
  • the acid-base test was carried out through gas sampling, and the concentration of hydriodic acid remained at 0.32g/L.
  • the same device is set up in this embodiment, and the sampling of the water-absorbing filter paper (2g) and the gas in the cavity are not carried out, and the same graphene oxide film is directly peeled off, and the processing time is 4h, after 4h, the graphene is detached, as shown in Figures 3B1-B2. It can be seen from the figure that under the reduction of hydriodic acid, the graphene film is completely detached from the substrate under the action of stress, and there is no macroscopic damage or microscopic pores during the detachment process.
  • the device as shown in FIG. 5 is used to peel off the graphene oxide film.
  • the graphene oxide film has a thickness of 60 nm and an area of 80 ⁇ 5 cm 2 . on an aluminum filter.
  • the device includes two left and right cavities 11 and 12 .
  • the cavities 11 and 12 are communicated through an inclined condenser pipe 13 .
  • Both chambers 11 and 12 are placed in a water bath 14 at 80 degrees Celsius.
  • the cavity 11 is filled with a hydroiodic acid solution, and the cavity 12 is used for placing the graphene oxide film to be peeled off.
  • the hydriodic acid solution in the cavity 11 is volatilized, and the water vapor in it is condensed and returned to the cavity 11 in the condenser tube, while the condensation temperature of HI is higher, which is input to the cavity 12 through the condenser tube 13 to construct the cavity 12 Environment with high HI concentration and low water vapor concentration.
  • the volume of the cavities 11 and 12 is 400 mL, and the bottom area is 50 cm 2 .
  • the content of the hydriodic acid solution in the cavity 11 is 0.5g (the mass concentration of HI is 55%), the ambient temperature of the condenser tube 13 is 40 degrees Celsius, the length of the condenser tube is 20cm, and the inclination angle is 30 degrees, which can effectively ensure the cavity Construction of an environment with high HI concentration and low water vapor concentration in body 12.
  • the evaporation chamber on the right kept the evaporation-condensation reflux, and there was still no condensed water at the rear of the condenser tube.
  • the concentration of hydriodic acid remained at 0.41g. /L.
  • the same device is set up in this embodiment, and the gas in the cavity is not sampled, and the same graphene oxide film is directly peeled off. After 1h of reduction, the graphene is separated. See Figures 3C1-C2. It can be seen from the figure that under the reduction of hydriodic acid, the graphene film is completely detached from the substrate under the action of stress, and there is no macroscopic damage or microscopic pores during the detachment process.
  • the device as shown in FIG. 6 is used to peel off the graphene oxide film.
  • the graphene oxide film has a thickness of 60 nm and an area of 80 ⁇ 5 cm 2 . on an aluminum filter.
  • the device includes two left and right cavities 11 and 12 .
  • the cavities 11 and 12 are communicated through an inclined condenser pipe 13 .
  • the cavity 11 is placed in an oil bath 14 of 120 degrees Celsius, and the cavity 12 is placed in a water bath 14 of 80 degrees Celsius.
  • the cavity 11 is filled with a hydroiodic acid solution, and the cavity 12 is used for placing the graphene oxide film to be peeled off.
  • the hydriodic acid solution in the cavity 11 is volatilized, and the water vapor in it is condensed and returned to the cavity 11 in the condenser tube, while the condensation temperature of HI is higher, which is input to the cavity 12 through the condenser tube 13 to construct the cavity 12 Environment with high HI concentration and low water vapor concentration.
  • the volume of the cavities 11 and 12 is 400 mL, and the bottom area is 50 cm 2 .
  • the content of the hydroiodic acid solution in the cavity 11 is 0.3g (the mass concentration of HI is 55%), the ambient temperature where the condenser tube 13 is located is 20 degrees Celsius, the length of the condenser tube is 20cm, and the inclination is 30 degrees, which can effectively ensure the cavity Construction of an environment with high HI concentration and low water vapor concentration in body 12.
  • the evaporation chamber on the right kept the evaporation-condensation reflux, and there was still no condensed water at the rear of the condenser tube.
  • the concentration of hydriodic acid remained at 0.30g. /L.
  • the same device is set up in this embodiment, and the gas in the cavity is not sampled, and the same graphene oxide film is directly peeled off. After reduction for 2h, the graphene is separated. See Figures 3D1-D2. It can be seen from the figure that under the reduction of hydriodic acid, the graphene film is completely detached from the substrate under the action of stress, and there is no macroscopic damage or microscopic pores in the detachment process.

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Abstract

Provided is a method for stripping a graphene oxide nano membrane from a substrate. The method comprises: placing in a reduction chamber having HI steam for chemical reduction, reducing for 10 min or more in an environment that the concentration of HI is 0.3 g/L or more and the concentration of water steam is 0.07 g/L or less, and automatically stripping graphene oxide from the substrate. The beneficial effects are that: steps for preparing an independent film are reduced; the operation is simpler, cheaper, and faster; the problems that an AAO membrane cannot bear the weight of a transfer agent since the strength of the membrane is not enough after the size of the nano membrane is increased, and a transfer operation is difficult in a solid-phase transfer process are avoided; and the integrity and uniformity of a large-size film are ensured.

Description

一种从基底上剥离氧化石墨烯纳米膜的方法A kind of method of peeling graphene oxide nanofilm from substrate 技术领域technical field
本发明涉及纳米材料领域,尤其涉及一种从基底上剥离氧化石墨烯纳米膜的方法。The invention relates to the field of nanomaterials, in particular to a method for peeling graphene oxide nanofilm from a substrate.
背景技术Background technique
近年来,氧化石墨烯基高性能石墨烯基宏观组装膜在电学、热学、磁学、光学等领域广泛应用。In recent years, graphene oxide-based high-performance graphene-based macroscopic assembled films have been widely used in electrical, thermal, magnetic, optical and other fields.
然而其目前仍然存在以下几方面的问题:其一,在厚度方向,亚微米以上厚度石墨烯膜具有极大的层间分离结构,在高温运行环境下,其稳定性较差,同时严重降低材料极限性能;其二,相对于单层石墨烯而言,宏观组装石墨烯厚膜和基底并没有很好的贴合性,因此在微电子元器件方面并不能应用。为此,需要一种独立支撑宏观组装纳米厚度石墨烯膜,一方面作为石墨烯厚膜的基元,为宏观组装石墨烯厚膜的结构控制提供了基元研究材料;另一方面辅助氧化石墨烯基石墨烯组装薄膜深入微电子器件领域,极大突破其应用限制,在CVD基单层石墨烯应用领域争得一席之地。However, there are still the following problems: First, in the thickness direction, the sub-micron thick graphene film has a great interlayer separation structure, and its stability is poor in a high temperature operating environment, and at the same time it seriously reduces the material The limit performance; second, compared with single-layer graphene, the macroscopically assembled graphene thick film and the substrate do not have good adhesion, so they cannot be used in microelectronic components. To this end, an independent support for macro-assembled nano-thick graphene films is needed. On the one hand, as the primitive of graphene thick films, it provides basic research materials for the structural control of macro-assembled graphene thick films; on the other hand, it assists graphite oxide. The graphene-based graphene assembly film has penetrated into the field of microelectronic devices, greatly breaking through its application limitations, and has won a place in the application field of CVD-based single-layer graphene.
目前,氧化石墨烯基的自支撑石墨烯膜的制备策略有以下两种:其一,溶液辅助界面分离法,在易升华固相转移剂帮助下,用化学试剂刻蚀掉基底或者渗入并分离界面;其二,冷缩法,直接利用固相转移剂的热胀冷缩效应,将纳米薄膜从基底上抓取下来。这两种策略都需要固相转移剂的辅助,限制了所制备石墨烯纳米膜的横向尺寸;同时固相转移剂的应用,操作复杂、容易损坏;转移剂有一定的毒性、转移剂挥发耗时较长。At present, there are two strategies for preparing graphene oxide-based self-supporting graphene films: one is the solution-assisted interfacial separation method, in which the substrate is etched away with chemical reagents or infiltrated and separated with the help of a sublimable solid phase transfer agent. interface; second, cold shrinkage method, which directly uses the thermal expansion and cold shrinkage effect of the solid phase transfer agent to grab the nano film from the substrate. Both strategies require the assistance of a solid phase transfer agent, which limits the lateral size of the prepared graphene nanofilm; at the same time, the application of a solid phase transfer agent is complicated to operate and easy to damage; the transfer agent has a certain toxicity, and the transfer agent volatilization consumption longer time.
为此,需要一种避开转移剂和刻蚀剂的方法,避免转移剂和刻蚀剂的劣势,同时可以得到大面积的石墨烯纳米薄膜。To this end, a method for avoiding the transfer agent and the etchant is required, avoiding the disadvantages of the transfer agent and the etchant, and at the same time, a graphene nano-film with a large area can be obtained.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于针对现有技术的不足,提供一种从基底上剥离氧化石墨烯纳米膜的方法。The object of the present invention is to provide a method for peeling graphene oxide nanofilm from a substrate in view of the deficiencies of the prior art.
本发明的目的是通过以下技术方案实现的:一种从基底上剥离氧化石墨烯纳米膜的方法,所述基底为孔隙率大于60%的刚性基底,所述氧化石墨烯纳米膜的厚度为20-100nm;该方法为:置于一具有HI蒸汽的还原室中进行化学还原,在HI的浓度在0.3g/L以上,且水蒸气的浓度在0.07g/L以下的环境下还原10min以上,氧化石墨烯从基底自动剥离。The object of the present invention is achieved through the following technical solutions: a method for peeling off a graphene oxide nanofilm from a substrate, wherein the substrate is a rigid substrate with a porosity greater than 60%, and the graphene oxide nanofilm has a thickness of 20% -100nm; the method is: place it in a reduction chamber with HI steam for chemical reduction, and reduce for more than 10 minutes in an environment where the concentration of HI is above 0.3g/L and the concentration of water vapor is below 0.07g/L, Graphene oxide is automatically exfoliated from the substrate.
本申请中,可以直接输入低水蒸气含量的HI蒸汽,也可以采用一与所述还原室相连通的蒸发室对氢碘酸进行蒸发,以向所述还原室输入HI蒸汽。In the present application, HI steam with low water vapor content can be directly input, or an evaporation chamber communicated with the reduction chamber can be used to vaporize the hydroiodic acid, so as to input the HI steam into the reduction chamber.
在某些实施例中,所述还原室和蒸发室位于同一密闭腔体中,且所述蒸发室位于所述还 原室下方,蒸发室位于温度为80-120摄氏度的油浴或水浴中;所述还原室顶部为冷凝区,冷凝区的温度控制在0-40℃(通常在室温下即可进行)。氢碘酸溶液蒸发成HI蒸汽和水蒸气,水蒸气一方面在顶部凝结,降低了腔体内的水蒸气含量,而HI的冷凝温度较低,其仍旧保持气态。作为较为优选的方案,冷凝区中设置吸水材料,以吸收水蒸气和冷凝水,避免冷凝水回落后重新蒸发。作为本领用的常用技术手段,所述吸水材料为:吸水滤纸、高吸水性树脂等多孔强亲吸水材料以及氯化钙、五氧化二磷等强吸水性化学品。In some embodiments, the reduction chamber and the evaporation chamber are located in the same closed cavity, and the evaporation chamber is located below the reduction chamber, and the evaporation chamber is located in an oil bath or a water bath with a temperature of 80-120 degrees Celsius; The top of the reduction chamber is a condensation zone, and the temperature of the condensation zone is controlled at 0-40°C (usually at room temperature). The hydriodic acid solution evaporates into HI vapor and water vapor. On the one hand, the water vapor condenses at the top, which reduces the water vapor content in the cavity, while the condensation temperature of HI is lower, and it remains gaseous. As a more preferred solution, a water-absorbing material is arranged in the condensation area to absorb water vapor and condensed water, so as to prevent the condensed water from re-evaporating after falling back. As a common technical means used in the art, the water-absorbing materials are: porous and strongly water-absorbing materials such as water-absorbing filter paper and superabsorbent resin, and strong water-absorbing chemicals such as calcium chloride and phosphorus pentoxide.
为方便制备,还原室内设有耐HI载物架,用于装载所述基底,例如聚四氟乙烯网架、镂空玻璃架等。For the convenience of preparation, an HI-resistant rack is provided in the reduction chamber for loading the substrate, such as a PTFE mesh rack, a hollow glass rack, and the like.
在某些实施例中,所述还原室和蒸发室分别位于一密闭腔体中。且两个密闭腔体通过一冷凝管连通;所述冷凝管对所述蒸发室蒸发的水蒸气进行冷凝,回流至所述蒸发室。碘酸溶液蒸发成HI蒸汽和水蒸气,水蒸气在冷凝管内冷凝,回流至蒸发室,而HI的冷凝温度较低,其仍旧保持气态。作为本领域的公知常识,通过设置冷凝管的长度、倾斜度、所处冷凝环境等参数,可以有效控制进入还原室的水蒸气含量。In some embodiments, the reduction chamber and the evaporation chamber are each located in a closed cavity. And the two closed cavities are communicated through a condenser pipe; the condenser pipe condenses the water vapor evaporated in the evaporation chamber, and returns to the evaporation chamber. The iodic acid solution is evaporated into HI vapor and water vapor, and the water vapor is condensed in the condenser tube and refluxed to the evaporation chamber, while the condensation temperature of HI is lower, and it remains gaseous. As a common knowledge in the art, by setting parameters such as the length, inclination, and condensation environment of the condensation pipe, the content of water vapor entering the reduction chamber can be effectively controlled.
优选的,所述蒸发室和还原室均位于温度为80-120摄氏度的油浴或水浴中,在某些较为优选的方案中,所述还原室所处温度低于所述蒸发室,有利于碘化氢气体向还原室快速扩散。同时,在碘化氢全部蒸发后,温差的存在会使的两侧存在压差,进而在低温区的还原室分布更高质量密度的碘化氢。Preferably, both the evaporation chamber and the reduction chamber are located in an oil bath or a water bath with a temperature of 80-120 degrees Celsius. In some preferred solutions, the temperature of the reduction chamber is lower than that of the evaporation chamber, which is beneficial to The hydrogen iodide gas diffuses rapidly toward the reduction chamber. At the same time, after the hydrogen iodide is completely evaporated, the existence of the temperature difference will cause a pressure difference on both sides, and then the hydrogen iodide with higher mass density will be distributed in the reduction chamber in the low temperature region.
本申请中,基底为阳极氧化铝、四氟乙烯滤膜、玻璃纤维滤膜等。In this application, the substrate is anodized aluminum, tetrafluoroethylene filter membrane, glass fiber filter membrane, and the like.
本发明的有益效果在于:The beneficial effects of the present invention are:
其一,减少独立薄膜制备步骤,操作更为简单、廉价、短时;First, the independent film preparation steps are reduced, and the operation is simpler, cheaper and shorter;
其二,此方法不需要转移剂,避免了纳米膜尺寸增加之后AAO膜的强度不够无法承受转移剂重量以及固相转移过程中转移操作困难的问题,保证了大尺寸薄膜的完整性;Second, this method does not require a transfer agent, which avoids the problems that the strength of the AAO film is insufficient to withstand the weight of the transfer agent after the size of the nanofilm increases and the transfer operation is difficult during the solid phase transfer process, ensuring the integrity of the large-sized film;
其三,碘化氢在还原过程中的完全渗透,避免了固相转移方法还原过程中还原不均匀以及固相转移剂的收缩作用对薄膜的撕裂作用,进一步保证了纳米薄膜的均匀性。Third, the complete penetration of hydrogen iodide in the reduction process avoids the non-uniform reduction in the reduction process of the solid phase transfer method and the tearing effect of the shrinkage effect of the solid phase transfer agent on the film, which further ensures the uniformity of the nano-film.
附图说明Description of drawings
图1为石墨烯膜和基底逐步分离过程图;Fig. 1 is the stepwise separation process diagram of graphene film and substrate;
图2为在刚性阳极氧化铝滤膜上通过抽滤得到的氧化石墨烯膜(4英寸)。Figure 2 is a graphene oxide membrane (4 inches) obtained by suction filtration on a rigid anodized aluminum filter membrane.
图3为分离后的氧化石墨烯膜(4英寸)。其中,A1图为固相转移剂辅助转移的石墨烯纳米膜。B1~D1为本申请无转移剂法制备无破损石墨烯纳米膜(依次对应实施例1-3);A2~D2为对应的放大图。Figure 3 is a graphene oxide membrane (4 inches) after separation. Among them, Figure A1 is the graphene nanofilm transferred by the solid phase transfer agent. B1-D1 are the non-damaged graphene nanofilms prepared by the transfer agent-free method in the present application (corresponding to Examples 1-3 in sequence); A2-D2 are corresponding enlarged views.
图4为实施例1的分离装置的平面示意图A和立体示意图B;4 is a schematic plan view A and a schematic perspective view B of the separation device of Example 1;
图5为实施例2的分离装置图;Fig. 5 is the separation device diagram of embodiment 2;
图6为实施例3的分离装置图。FIG. 6 is a diagram of a separation device of Example 3. FIG.
具体实施方式Detailed ways
申请人在大量石墨烯剥离实验中发现,还原过程中氢碘酸蒸汽浓度不够,相对蒸汽压小,HI蒸汽不足以完全渗透入石墨烯膜和基底接触界面;The applicant found in a large number of graphene exfoliation experiments that the concentration of hydriodic acid vapor during the reduction process was insufficient, the relative vapor pressure was small, and the HI vapor was insufficient to completely penetrate into the contact interface between the graphene film and the substrate;
另外HI蒸汽中夹杂着水蒸汽,起到浸润作用,一方面阻碍HI的快速渗透,另一方面浸润界面,抑制界面分离。氢碘酸的不对称还原和渗透作用极大减少了界面剂接触面积以及作用力,此微弱接触界面可以被异丙醇等溶剂作用剥离;但是水蒸气的浸润以及HI蒸汽压力的不足,薄膜并不能和基底分离。本申请中,我们针对具有孔隙的刚性基底,提出一种石墨烯膜的剥离方法,通过调控HI以及控制水份的蒸汽压,使得HI的不对称还原以及界面渗透作用增强,石墨烯膜和基底逐步分离(图1)。In addition, the HI vapor is mixed with water vapor, which plays a role in wetting. On the one hand, it hinders the rapid penetration of HI, and on the other hand, it wets the interface and inhibits the interface separation. The asymmetric reduction and penetration of hydriodic acid greatly reduces the contact area and force of the interface agent, and the weak contact interface can be peeled off by solvents such as isopropanol; Cannot be separated from the base. In this application, we propose a graphene film exfoliation method for rigid substrates with pores. By regulating HI and controlling the vapor pressure of water, the asymmetric reduction of HI and the interfacial permeation are enhanced. Gradual separation (Figure 1).
相对于固相转移的制备方法,本专利方法气相分离法更为温和,对薄膜几乎没有任何强烈撕裂效应,而固相转移法则相反。具体表现如下:其一,AAO为脆性材料,固相转移剂操作过程中会对AAO有重量负担,会损伤AAO膜或者不能有完好的覆盖连续性,导致固相转移剂剥离的不连续,最终不能得到完整的石墨烯纳米膜(图2);而气相还原不存在这些问题,因而可以得到完美的大尺寸石墨烯膜。而在微观结构上,固相转移法的中有可能会因为石墨烯还原程度不够从而造成氧化石墨烯和AAO基底的强粘连,冷缩作用下对局部地方形成孔洞型撕裂(图3A1~A2),而温和的气相转移法所则不存在这方面问题,可以得到无任何撕裂的完美的石墨烯膜(图3B~D)。Compared with the preparation method of solid phase transfer, the gas-phase separation method of the patented method is milder and hardly has any strong tearing effect on the film, while the law of solid phase transfer is opposite. The specific performance is as follows: First, AAO is a brittle material. During the operation of the solid phase transfer agent, it will have a weight burden on AAO, which will damage the AAO film or fail to have good coverage continuity, resulting in discontinuous peeling of the solid phase transfer agent. Complete graphene nanofilms cannot be obtained (Fig. 2); however, gas-phase reduction does not have these problems, so perfect large-sized graphene films can be obtained. In terms of microstructure, the solid-phase transfer method may cause strong adhesion between graphene oxide and AAO substrate due to insufficient reduction of graphene, and form hole-type tearing in local areas under the action of cold shrinkage (Figure 3A1-A2). ), while the mild gas-phase transfer method does not have this problem, and a perfect graphene film without any tearing can be obtained (Figure 3B-D).
下面结合实施例对本发明作进一步说明。The present invention will be further described below in conjunction with the examples.
对比例1Comparative Example 1
采用固相转移剂进行石墨烯剥离(CN201710953513.8),该氧化石墨烯膜厚度为100nm,面积为80±5cm 2,通过抽滤方法沉积在孔隙率为60%的刚性四氟乙烯滤膜上。 Graphene exfoliation using a solid phase transfer agent (CN201710953513.8), the graphene oxide film has a thickness of 100 nm and an area of 80±5 cm 2 , and is deposited on a rigid tetrafluoroethylene filter membrane with a porosity of 60% by suction filtration .
固相转移法分离时,需要实验人员精细操作,若操作不当、注意力不集中则十分容易破损石墨烯纳米膜,尤其是转移剂冷抓过程中有机会出现局部孔洞破损,见图3A1~A2。另外,石墨烯和基底仍有部分粘连。When the solid phase transfer method is used for separation, the experimenter needs to operate carefully. If the operation is improper and the attention is not focused, it is very easy to damage the graphene nanomembrane, especially in the process of cold grasping of the transfer agent, there is a chance of local hole damage, see Figure 3A1~A2 . In addition, the graphene and the substrate are still partially adhered.
进一步,宏观上,由于温度或者转移剂沉积不均匀,导致局部应力分布不均,固相转移剂收缩抓取不均匀,不能得到完整的大尺寸石墨烯膜(3A1);微观上,由于一些极小的粘连或者还原不均匀,抓取过程中未能对此部分石墨烯有效剥离,进而会形成微小孔洞,导致材料的不均匀,影响其应用场景下性能稳定性。Further, macroscopically, due to the uneven deposition of temperature or transfer agent, the local stress distribution is uneven, and the solid phase transfer agent shrinks and grasps unevenly, so that a complete large-scale graphene film (3A1) cannot be obtained; Small adhesion or uneven reduction, the graphene cannot be effectively peeled off during the grasping process, and then tiny holes will be formed, resulting in uneven material and affecting its performance stability in application scenarios.
实施例1:Example 1:
本实施例采用如图4A~B所述的装置进行氧化石墨烯膜的剥离,该氧化石墨烯膜厚度为100nm,面积为80±5cm 2,通过抽滤方法沉积在孔隙率为60%的刚性四氟乙烯滤膜上(同对比例1)。 In this embodiment, the device as shown in FIGS. 4A-B is used to peel off the graphene oxide film. The graphene oxide film has a thickness of 100 nm and an area of 80±5 cm 2 , and is deposited on a rigid material with a porosity of 60% by suction filtration. tetrafluoroethylene filter membrane (same as in Comparative Example 1).
该装置包括筒状腔体3,腔体3内盛氢碘酸溶液2,在氢碘酸溶液液面上方,固定有聚四氟乙烯网架2,用于密封该筒状腔体的顶盖4上设置有吸水滤纸5。The device includes a cylindrical cavity 3, and the cavity 3 contains a hydroiodic acid solution 2. Above the liquid level of the hydroiodic acid solution, a polytetrafluoroethylene mesh frame 2 is fixed to seal the top cover of the cylindrical cavity. 4 is provided with a water-absorbing filter paper 5 .
该筒状腔体下部位于80摄氏度水浴1中,聚四氟乙烯网架2上放置待剥离样品。The lower part of the cylindrical cavity is located in a water bath 1 at 80 degrees Celsius, and the sample to be peeled off is placed on a PTFE mesh frame 2 .
氢碘酸溶液在加热下,蒸发成HI蒸汽和水蒸气,水蒸气一方面在顶部凝结,并给吸水滤纸吸收,达到降低了腔体内的水蒸气含量,而HI的冷凝温度较低,其仍旧保持气态。Under heating, the hydroiodic acid solution evaporates into HI vapor and water vapor. On the one hand, the water vapor condenses on the top and is absorbed by the water-absorbing filter paper to reduce the water vapor content in the cavity. Keep gaseous.
本实施例中,筒状腔体3容积为1L、底面积为120cm 2。腔体3内氢碘酸溶液的质量浓度为50%,HI质量含量为0.42g,其余部分为水(0.42g)。吸水滤纸(2g)吸水极限为其质量的60%。腔体3上部所处的环境温度为0摄氏度。 In this embodiment, the volume of the cylindrical cavity 3 is 1 L and the bottom area is 120 cm 2 . The mass concentration of the hydroiodic acid solution in the cavity 3 is 50%, the mass content of HI is 0.42g, and the rest is water (0.42g). Water absorption filter paper (2g) has a water absorption limit of 60% of its mass. The ambient temperature at the upper part of the cavity 3 is 0 degrees Celsius.
在加热5分钟后,氢碘酸溶液2完全蒸发,盛有的碘化氢溶液肉眼减少至不可见。在顶层看到部分水液滴的凝结,吸水纸吸湿膨胀。经过取样测试,吸水滤纸便增重0.44g,而此时经过气体取样进行酸碱测试,氢碘酸的浓度仍保持在0.33g/L。证明腔体3中水蒸气含量在0.07g/L以下。持续1h后,再经过气体取样进行酸碱测试,氢碘酸的浓度仍保持在0.32g/L。After 5 minutes of heating, the hydroiodic acid solution 2 was completely evaporated, and the hydrogen iodide solution contained was reduced to invisible to the naked eye. The condensation of some water droplets was seen on the top layer, and the absorbent paper was hygroscopic and swelled. After the sampling test, the water-absorbing filter paper gained 0.44g in weight. At this time, after gas sampling and acid-base test, the concentration of hydriodic acid remained at 0.33g/L. It is proved that the water vapor content in cavity 3 is below 0.07g/L. After 1 hour, the acid-base test was carried out through gas sampling, and the concentration of hydriodic acid remained at 0.32g/L.
为避免上述取样测量对于石墨烯膜的影响,本实施例另设相同的装置,不进行吸水滤纸(2g)取样和腔体内气体的取样,直接对相同的氧化石墨烯膜进行剥离,处理时间为4h,4h后,石墨烯脱离,见图3B1~B2。从图中可以看出在氢碘酸的还原作用下,石墨烯膜在应力作用下和基底完全脱离,且脱离过程中没有任何宏观破损和微观孔洞出现。In order to avoid the influence of the above-mentioned sampling measurement on the graphene film, the same device is set up in this embodiment, and the sampling of the water-absorbing filter paper (2g) and the gas in the cavity are not carried out, and the same graphene oxide film is directly peeled off, and the processing time is 4h, after 4h, the graphene is detached, as shown in Figures 3B1-B2. It can be seen from the figure that under the reduction of hydriodic acid, the graphene film is completely detached from the substrate under the action of stress, and there is no macroscopic damage or microscopic pores during the detachment process.
实施例2:Example 2:
本实施例采用如图5所述的装置进行氧化石墨烯膜的剥离,该氧化石墨烯膜厚度为60nm,面积为80±5cm 2,通过抽滤方法沉积在孔隙率为80%的刚性阳极氧化铝滤膜上。 In this embodiment, the device as shown in FIG. 5 is used to peel off the graphene oxide film. The graphene oxide film has a thickness of 60 nm and an area of 80±5 cm 2 . on an aluminum filter.
该装置包括左右两个腔体11和12。腔体11和12通过一倾斜的冷凝管13相连通。腔体11和12均置于80摄氏度水浴14中。The device includes two left and right cavities 11 and 12 . The cavities 11 and 12 are communicated through an inclined condenser pipe 13 . Both chambers 11 and 12 are placed in a water bath 14 at 80 degrees Celsius.
腔体11内盛有氢碘酸溶液,腔体12用于放置待剥离的氧化石墨烯膜。腔体11内的氢碘酸溶液挥发,其中的水蒸气在冷凝管中冷凝回流至腔体11,而HI的冷凝温度较高,其通过冷凝管13输入至腔体12,以构建腔体12高HI浓度、低水蒸气浓度的环境。The cavity 11 is filled with a hydroiodic acid solution, and the cavity 12 is used for placing the graphene oxide film to be peeled off. The hydriodic acid solution in the cavity 11 is volatilized, and the water vapor in it is condensed and returned to the cavity 11 in the condenser tube, while the condensation temperature of HI is higher, which is input to the cavity 12 through the condenser tube 13 to construct the cavity 12 Environment with high HI concentration and low water vapor concentration.
本实施例中,腔体11和12的容积为400mL、底面积为50cm 2。腔体11中的氢碘酸溶液含量为0.5g(HI质量浓度为55%),冷凝管13所处的环境温度为40摄氏度,冷凝管长度为 20cm,倾斜角度为30度,能有效保证腔体12高HI浓度、低水蒸气浓度的环境的构建。 In this embodiment, the volume of the cavities 11 and 12 is 400 mL, and the bottom area is 50 cm 2 . The content of the hydriodic acid solution in the cavity 11 is 0.5g (the mass concentration of HI is 55%), the ambient temperature of the condenser tube 13 is 40 degrees Celsius, the length of the condenser tube is 20cm, and the inclination angle is 30 degrees, which can effectively ensure the cavity Construction of an environment with high HI concentration and low water vapor concentration in body 12.
经实验证明,在加热5分钟后,氢碘酸溶液完全蒸发,水蒸气在冷凝管前部冷凝回流至腔体11,在冷凝管的后部没有产生任何冷凝水,说明几乎没有水蒸气进入右侧的还原室。经过对还原室的气体取样进行酸碱测试,氢碘酸的浓度仍保持为0.43g/L。It has been proved by experiments that after heating for 5 minutes, the hydroiodic acid solution completely evaporates, the water vapor condenses and returns to the cavity 11 at the front of the condenser tube, and no condensed water is produced at the rear of the condenser tube, indicating that almost no water vapor enters the right side. side recovery chamber. After the acid-base test of the gas sampling in the reduction chamber, the concentration of hydriodic acid remained at 0.43g/L.
30分钟后,右侧的蒸发室保持蒸发-冷凝回流,在冷凝管的后部依旧没有产生任何冷凝水,经过对还原室的气体取样进行酸碱测试,氢碘酸的浓度仍保持为0.41g/L。After 30 minutes, the evaporation chamber on the right kept the evaporation-condensation reflux, and there was still no condensed water at the rear of the condenser tube. After sampling the gas in the reduction chamber for acid-base test, the concentration of hydriodic acid remained at 0.41g. /L.
为避免上述取样测量对于石墨烯膜的影响,本实施例另设相同的装置,不进行腔体内气体的取样,直接对相同的氧化石墨烯膜进行剥离,在还原1h后,石墨烯脱离,见图3C1~C2。从图中可以看出在氢碘酸的还原作用下,石墨烯膜在应力作用下和基底完全脱离,且脱离过程中没有任何宏观破损和微观孔洞出现。In order to avoid the influence of the above sampling measurement on the graphene film, the same device is set up in this embodiment, and the gas in the cavity is not sampled, and the same graphene oxide film is directly peeled off. After 1h of reduction, the graphene is separated. See Figures 3C1-C2. It can be seen from the figure that under the reduction of hydriodic acid, the graphene film is completely detached from the substrate under the action of stress, and there is no macroscopic damage or microscopic pores during the detachment process.
实施例3:Example 3:
本实施例采用如图6所述的装置进行氧化石墨烯膜的剥离,该氧化石墨烯膜厚度为60nm,面积为80±5cm 2,通过抽滤方法沉积在孔隙率为80%的刚性阳极氧化铝滤膜上。 In this embodiment, the device as shown in FIG. 6 is used to peel off the graphene oxide film. The graphene oxide film has a thickness of 60 nm and an area of 80±5 cm 2 . on an aluminum filter.
该装置包括左右两个腔体11和12。腔体11和12通过一倾斜的冷凝管13相连通。腔体11置于120摄氏度油浴14中,腔体12均置于80摄氏度水浴14中。The device includes two left and right cavities 11 and 12 . The cavities 11 and 12 are communicated through an inclined condenser pipe 13 . The cavity 11 is placed in an oil bath 14 of 120 degrees Celsius, and the cavity 12 is placed in a water bath 14 of 80 degrees Celsius.
腔体11内盛有氢碘酸溶液,腔体12用于放置待剥离的氧化石墨烯膜。腔体11内的氢碘酸溶液挥发,其中的水蒸气在冷凝管中冷凝回流至腔体11,而HI的冷凝温度较高,其通过冷凝管13输入至腔体12,以构建腔体12高HI浓度、低水蒸气浓度的环境。The cavity 11 is filled with a hydroiodic acid solution, and the cavity 12 is used for placing the graphene oxide film to be peeled off. The hydriodic acid solution in the cavity 11 is volatilized, and the water vapor in it is condensed and returned to the cavity 11 in the condenser tube, while the condensation temperature of HI is higher, which is input to the cavity 12 through the condenser tube 13 to construct the cavity 12 Environment with high HI concentration and low water vapor concentration.
同实施例2,本实施例中,腔体11和12的容积为400mL、底面积为50cm 2。腔体11中的氢碘酸溶液含量为0.3g(HI质量浓度为55%),冷凝管13所处的环境温度为20摄氏度,冷凝管长度为20cm,倾斜度为30度,能有效保证腔体12高HI浓度、低水蒸气浓度的环境的构建。 Same as Embodiment 2, in this embodiment, the volume of the cavities 11 and 12 is 400 mL, and the bottom area is 50 cm 2 . The content of the hydroiodic acid solution in the cavity 11 is 0.3g (the mass concentration of HI is 55%), the ambient temperature where the condenser tube 13 is located is 20 degrees Celsius, the length of the condenser tube is 20cm, and the inclination is 30 degrees, which can effectively ensure the cavity Construction of an environment with high HI concentration and low water vapor concentration in body 12.
经实验证明,在加热5分钟后,氢碘酸溶液完全蒸发,水蒸气在冷凝管前部冷凝回流至腔体11,在冷凝管的后部没有产生任何冷凝水,说明几乎没有水蒸气进入右侧的还原室。经过对还原室的气体取样进行酸碱测试,氢碘酸的浓度仍保持为0.33g/L。It has been proved by experiments that after heating for 5 minutes, the hydroiodic acid solution completely evaporates, the water vapor condenses and returns to the cavity 11 at the front of the condenser tube, and no condensed water is produced at the rear of the condenser tube, indicating that almost no water vapor enters the right side. side recovery chamber. After the acid-base test of the gas sampling in the reduction chamber, the concentration of hydriodic acid remained at 0.33g/L.
10分钟后,右侧的蒸发室保持蒸发-冷凝回流,在冷凝管的后部依旧没有产生任何冷凝水,经过对还原室的气体取样进行酸碱测试,氢碘酸的浓度仍保持为0.30g/L。After 10 minutes, the evaporation chamber on the right kept the evaporation-condensation reflux, and there was still no condensed water at the rear of the condenser tube. After sampling the gas in the reduction chamber for acid-base test, the concentration of hydriodic acid remained at 0.30g. /L.
为避免上述取样测量对于石墨烯膜的影响,本实施例另设相同的装置,不进行腔体内气体的取样,直接对相同的氧化石墨烯膜进行剥离,在还原2h后,石墨烯脱离,见图3D1~D2。从图中可以看出在氢碘酸的还原作用下,石墨烯膜在应力作用下和基底完全脱离,且脱离过 程中没有任何宏观破损和微观孔洞出现。In order to avoid the influence of the above-mentioned sampling measurement on the graphene film, the same device is set up in this embodiment, and the gas in the cavity is not sampled, and the same graphene oxide film is directly peeled off. After reduction for 2h, the graphene is separated. See Figures 3D1-D2. It can be seen from the figure that under the reduction of hydriodic acid, the graphene film is completely detached from the substrate under the action of stress, and there is no macroscopic damage or microscopic pores in the detachment process.

Claims (9)

  1. 一种从基底上剥离氧化石墨烯纳米膜的方法,所述基底为孔隙率大于60%的刚性基底,所述氧化石墨烯纳米膜的厚度为20-100nm;其特征在于,该方法为:置于一具有HI蒸汽的还原室中进行化学还原至氧化石墨烯从基底自动剥离;还原过程中,至少在HI的浓度在0.3g/L以上,且水蒸气的浓度在0.07g/L以下的环境下还原10min以上。A method for peeling off a graphene oxide nano-film from a substrate, wherein the substrate is a rigid substrate with a porosity greater than 60%, and the graphene oxide nano-film has a thickness of 20-100 nm; it is characterized in that the method is: placing Carry out chemical reduction in a reduction chamber with HI vapor until graphene oxide is automatically peeled off from the substrate; during the reduction process, at least in an environment where the concentration of HI is above 0.3g/L, and the concentration of water vapor is below 0.07g/L Reduction for more than 10min.
  2. 根据权利要求1所述的方法,其特征在于,该方法还采用一与所述还原室相连通的蒸发室对氢碘酸进行蒸发,以向所述还原室输入HI蒸汽。The method according to claim 1, characterized in that, the method further adopts an evaporation chamber communicated with the reduction chamber to vaporize the hydroiodic acid, so as to input the HI vapor into the reduction chamber.
  3. 根据权利要求2所述的方法,其特征在于,所述还原室和蒸发室位于同一密闭腔体中,且所述蒸发室位于所述还原室下方,蒸发室位于温度为80-120摄氏度的油浴或水浴中;所述还原室顶部具有冷凝区,冷凝区的温度为0~40℃。The method according to claim 2, wherein the reduction chamber and the evaporation chamber are located in the same closed cavity, the evaporation chamber is located below the reduction chamber, and the evaporation chamber is located in oil with a temperature of 80-120 degrees Celsius bath or water bath; the top of the reduction chamber has a condensation zone, and the temperature of the condensation zone is 0-40°C.
  4. 根据权利要求3所述的方法,其特征在于,所述冷凝区设有吸水材料,所述吸水材料为:吸水滤纸、高吸水性树脂等多孔强亲吸水材料以及氯化钙、五氧化二磷等强吸水性化学品。The method according to claim 3, wherein the condensation zone is provided with a water-absorbing material, and the water-absorbing material is a porous strong water-absorbing material such as water-absorbing filter paper, superabsorbent resin, calcium chloride, phosphorus pentoxide, etc. Isostrong absorbent chemicals.
  5. 根据权利要求3所述的方法,其特征在于,所述还原室内设有耐HI载物架,用于装载所述基底。The method of claim 3, wherein the reduction chamber is provided with an HI-resistant rack for loading the substrate.
  6. 根据权利要求5所述的方法,其特征在于,所述载物架为聚四氟乙烯网架、镂空玻璃架等。The method according to claim 5, wherein the carrier is a polytetrafluoroethylene mesh frame, a hollow glass frame, or the like.
  7. 根据权利要求2所述的方法,其特征在于,所述还原室和蒸发室分别位于一密闭腔体中。且两个密闭腔体通过一冷凝管连通;冷凝管所处温度为0~40℃。所述冷凝管对所述蒸发室蒸发的水蒸气进行冷凝,回流至所述蒸发室。The method according to claim 2, wherein the reduction chamber and the evaporation chamber are respectively located in a closed cavity. And the two closed cavities are communicated through a condenser pipe; the temperature of the condenser pipe is 0-40°C. The condensation pipe condenses the water vapor evaporated in the evaporation chamber and returns to the evaporation chamber.
  8. 根据权利要求7所述的方法,其特征在于,所述蒸发室和还原室均位于温度为80-120摄氏度的油浴或水浴中,且所述还原室所处温度低于所述蒸发室。The method according to claim 7, wherein the evaporation chamber and the reduction chamber are located in an oil bath or a water bath with a temperature of 80-120 degrees Celsius, and the temperature of the reduction chamber is lower than that of the evaporation chamber.
  9. 根据权利要求1所述的方法,其特征在于,基底为阳极氧化铝、四氟乙烯滤膜、玻璃纤维滤膜。The method according to claim 1, wherein the substrate is anodized aluminum, a tetrafluoroethylene filter membrane, or a glass fiber filter membrane.
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