WO2022137725A1 - Substrate treating device, substrate treating method, and ultraviolet ray irradiation unit - Google Patents

Substrate treating device, substrate treating method, and ultraviolet ray irradiation unit Download PDF

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Publication number
WO2022137725A1
WO2022137725A1 PCT/JP2021/036998 JP2021036998W WO2022137725A1 WO 2022137725 A1 WO2022137725 A1 WO 2022137725A1 JP 2021036998 W JP2021036998 W JP 2021036998W WO 2022137725 A1 WO2022137725 A1 WO 2022137725A1
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Prior art keywords
ultraviolet
light
substrate
processing container
measuring device
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PCT/JP2021/036998
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French (fr)
Japanese (ja)
Inventor
海 塩野
裕雄 川崎
哲也 斉藤
和良 山崎
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東京エレクトロン株式会社
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Publication of WO2022137725A1 publication Critical patent/WO2022137725A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the present disclosure relates to a substrate processing apparatus, a substrate processing method, and an ultraviolet irradiation unit.
  • an ultraviolet light source (ultraviolet lamp) irradiates a processing container with ultraviolet rays through an ultraviolet transmission window to generate radicals of oxygen-containing gas to perform oxidation treatment on a substrate (for example, Patent Documents 1 and 2). ..
  • Patent Document 1 describes that a light amount sensor is inserted into a lamp house that houses an ultraviolet lamp to measure the light amount of the ultraviolet lamp. Further, Patent Document 2 describes a substrate processing apparatus that forms an oxide film using radicals of an oxygen-containing gas generated by irradiation with ultraviolet rays and performs radical nitriding treatment on the oxide film using remote plasma. ing.
  • the present disclosure provides a substrate processing apparatus, a substrate processing method, and an ultraviolet irradiation unit capable of appropriately irradiating a processing container with ultraviolet rays through an ultraviolet transmission window to process the substrate.
  • the substrate processing apparatus is a substrate processing apparatus that processes a substrate, and includes a processing container for accommodating the substrate, a gas supply mechanism for supplying an oxygen-containing gas into the processing container, and the processing.
  • the container is provided with an ultraviolet irradiation unit that irradiates the inside of the container with ultraviolet rays to generate oxygen radicals in the processing container, and the ultraviolet irradiation unit includes an ultraviolet light source that radiates ultraviolet rays from the outside of the processing container into the processing container.
  • First light measurement for measuring the light irradiation parameters of the ultraviolet light transmitting window that transmits the ultraviolet rays emitted from the ultraviolet light source into the processing container and the ultraviolet rays that pass through the ultraviolet transmitting window and are irradiated into the processing container. It has a vessel and.
  • a substrate processing apparatus capable of appropriately irradiating a processing container with ultraviolet rays through an ultraviolet transmission window to process the substrate are provided.
  • 1 and 2 are a vertical sectional view and a horizontal sectional view schematically showing an outline of the configuration of the substrate processing apparatus according to the embodiment.
  • the substrate processing apparatus of the present embodiment forms a silicon oxide film on the surface of the substrate W by ultraviolet light radical oxidation treatment, and then performs remote plasma radical nitriding treatment to nitrid the surface of the silicon oxide film.
  • the substrate W may be any as long as it has silicon on its surface, and a silicon wafer can be typically mentioned.
  • the substrate processing device 1 includes a processing container 10, a gas supply mechanism 20, an exhaust unit 30, a remote plasma unit 40, an ultraviolet irradiation unit 50, and a control unit 60.
  • the processing container 10 is for accommodating the substrate W for processing, is made of a metal material, and has a rectangular parallelepiped shape.
  • the inside of the processing container 10 has a processing space S for processing the substrate W, and is configured to be decompressible.
  • the length direction of the processing container 10 is the X direction
  • the width direction orthogonal to the length direction is the Y direction
  • the height direction is the Z direction.
  • One side wall 10a1 of the processing container 10 is provided with a carry-in outlet 11 for the substrate W, and the carry-in outlet 11 is provided with a gate valve 12 for opening and closing the carry-in outlet 11.
  • a stage 13 on which the substrate W is placed is provided in the processing container 10.
  • the upper surface of the stage 13 is a mounting surface 13a on which the substrate W is horizontally mounted.
  • the substrate W has a circular shape
  • the mounting surface 13a also has a circular shape so as to fit the substrate W.
  • the substrate processing apparatus 1 has a heater (not shown) for heating the substrate W.
  • the heater is provided on the stage 13, for example.
  • a rotation shaft 13b is connected to the center of the lower surface of the stage 13.
  • the rotary shaft 13b penetrates the bottom wall 10b of the processing container 10 and extends below the processing container 10 and is connected to the rotation drive mechanism 19. Therefore, the rotation drive mechanism 19 rotates the stage 13 via the rotation shaft 13b.
  • the rotation shaft 13b and the bottom wall 10b of the processing container 10 are hermetically sealed by a magnetic fluid seal or the like.
  • the gas supply mechanism 20 is provided in a gas supply source 21 for supplying gas, a gas supply pipe 22 having one end connected to the gas supply source 21 to supply gas into the processing container 10, and a gas supply in the processing container 10. It has a gas introduction unit 23 connected to the other end of the pipe 22.
  • the gas supply source 21 supplies an oxygen-containing gas such as oxygen gas, and an inert gas used as a pressure regulating gas and a purge gas.
  • the gas supply pipe 22 is inserted into the processing container 10 from the upper part of the side wall 10a2 facing the one side wall 10a1 on which the carry-in outlet 11 is formed.
  • the gas introduction portion 23 extends along the width direction (Y direction in the drawing) of the processing container 10 to the outer position of the upper stage 13 in the processing container 10. As shown in FIG. 2, the gas introduction portion 23 is formed so that a plurality of injection ports 23a are arranged in the width direction (Y direction). Therefore, the oxygen-containing gas supplied from the gas supply source 21 is configured to reach the gas introduction unit 23 through the gas supply pipe 22 and to be discharged from the injection port 23a to the processing space S.
  • the exhaust unit 30 includes an exhaust pipe 31 connected to an exhaust hole 15 formed in the bottom wall 10b of the processing container 10, a vacuum pump for exhausting the processing space S via the exhaust pipe 31, and an automatic control valve. 32 and.
  • the exhaust hole 15 is formed so as to extend in the width direction (Y direction) at a position on the carry-in outlet 11 side of the bottom wall 10b outside the stage 13.
  • the upper end of the exhaust pipe 31 is widened corresponding to the width of the exhaust hole 15.
  • the gas introduction section 23 extends in the Y direction on one side of the stage 13, and the exhaust hole 15 extends in the Y direction on the other side of the stage 13, it is introduced from the gas introduction section 23.
  • the oxygen-containing gas passes over the stage 13 and flows toward the exhaust hole 15.
  • the remote plasma unit 40 has a remote plasma supply source 41 and a radical supply pipe 42 that supplies nitrogen radicals from the remote plasma supply source 41 into the processing container 10.
  • the remote plasma supply source 41 is supplied with an inert gas (rare gas) such as argon gas and a nitrogen-containing gas such as nitrogen gas, and a nitrogen radical is generated by a plasma (for example, capacitively coupled plasma) generated by an appropriate plasma generation mechanism.
  • a plasma for example, capacitively coupled plasma
  • One end of the radical supply pipe 42 is connected to the remote plasma supply source 41, and the other end is connected to the supply hole 16 formed in the side wall 10a2, and the nitrogen radical generated by the remote plasma supply source 41 is connected to the radical supply pipe. It is supplied to the processing space S in the processing container 10 through the 42 and the supply hole 16.
  • the ultraviolet irradiation unit 50 transmitted through three ultraviolet light sources 51 provided above the processing container 10, an ultraviolet transmitting window 53 that transmits ultraviolet rays from each ultraviolet light source 51 to the processing container 10, and an ultraviolet transmitting window 53. It has an illuminance meter 55 that measures illuminance, which is a light irradiation parameter of ultraviolet rays.
  • the three ultraviolet light sources 51 are linear and are provided in a region facing the mounting surface 13a of the stage 13 in a state where the longitudinal direction is the width direction (Y direction) of the processing container.
  • the three ultraviolet light sources 51 are slightly longer than the diameter of the stage 13, and each has the same length.
  • the length of the processing container 10 is set so that the end positions in the width direction (Y direction) are at the same position. They are arranged in the vertical direction (X direction). Further, the three ultraviolet light sources 51 are provided so that the distances in the Z direction to the substrate W on the stage 13 are equal to each other.
  • the three ultraviolet light sources 51 are of the same type having the same characteristics such as wavelength and maximum output, and emit ultraviolet rays having a wavelength of 172 nm, for example. Further, the three ultraviolet light sources 51 are controlled so that the outputs from the respective ultraviolet light sources 51 are equal to each other when the oxide film is formed.
  • none of the three ultraviolet light sources 51 is located on the rotation axis 13b of the stage 13, that is, on the center of the substrate W mounted on the stage 13, and is offset from the center of the substrate W. ..
  • the ultraviolet rays emitted from the ultraviolet light source 51 pass through the opening 17 provided in the ceiling wall 10c of the processing container 10, further pass through the ultraviolet transmission window 53, and are irradiated into the processing container 10.
  • the ultraviolet ray transmitting window 53 is made of a material that transmits ultraviolet rays, for example, quartz.
  • the illuminance meter 55 is connected to the hole 18 formed in the side wall 10a3 between the side wall 10a1 and the side wall 10a2, and measures the illuminance of the light guided from the hole 18.
  • the hole 18 is provided in the portion of the side wall 10a3 corresponding to the position directly below the one closest to the gas introduction portion 23 among the three ultraviolet light sources 51 (see FIG. 2).
  • the hole 18 may be provided in a portion corresponding to a position directly below the other ultraviolet light source 51.
  • the illuminance meter 55 measures the illuminance of the ultraviolet rays transmitted through the ultraviolet transmitting window 53, and the measured value is used to determine whether the ultraviolet transmittance of the ultraviolet transmitting window 53 is normal.
  • Each of the three ultraviolet light sources 51 is housed in the case 52, and the ultraviolet rays from the ultraviolet light source 51 are configured so as not to be emitted in directions other than the opening 17.
  • a light source illuminance meter 56 for measuring illuminance, which is a light irradiation parameter, is provided in the case 52.
  • the light source illuminance meter 56 is for directly measuring the illuminance of the ultraviolet light source 51 to determine the deterioration of the ultraviolet light source 51.
  • the outside of the three cases 52 containing the ultraviolet light source 51 is covered with a cover 54.
  • the control unit 60 controls the gas supply mechanism 20, the exhaust unit 30, the remote plasma unit 40, the ultraviolet irradiation unit 50, and the rotation drive mechanism 19 that constitute the substrate processing device 1.
  • the control unit 60 includes a main control unit having a CPU, an input device, an output device, a display device, and a storage device. Then, the processing of the substrate processing apparatus 1 is controlled based on the processing recipe stored in the storage medium of the storage apparatus. Further, the control unit 60 determines whether or not the processing container 10 is appropriately irradiated with ultraviolet rays based on the measurement result of the illuminance meter 55, and also functions as a control unit of the ultraviolet irradiation unit 50.
  • the ultraviolet irradiation unit 50 further has a cooling mechanism 70.
  • the ultraviolet light transmitting window 53 may have a high temperature due to radiant heat from a heater (not shown) for heating the stage 13, and the light transmittance decreases when the temperature becomes high.
  • the ultraviolet light source 51 may have a high temperature due to its own heat generation or the like, and if it is used in a state of high temperature, its life will be shortened. Therefore, the cooling mechanism 70 is configured to cool the ultraviolet transmission window 53 and the ultraviolet light source 51.
  • the cooling mechanism 70 includes a cooling gas flow path 71 provided in an annular shape around the opening 17 of the ceiling wall 10c, and a gas formed from the cooling gas flow path 71 toward the opening 17. It has a spout 72. Two (pair) of gas outlets 72 are provided so as to face each other with the opening 17 interposed therebetween. However, the number of gas outlets 72 is not limited to two, and may be three or more, and a plurality of pairs may be provided.
  • the gas outlet 72 is provided so as to be inclined downward so as to face the ultraviolet ray transmitting window 53.
  • Cooling gas is supplied to the cooling gas flow path 71 from a cooling gas supply source (not shown) via a pipe.
  • a cooling gas supply source not shown
  • an inert gas such as nitrogen gas or argon gas can be used.
  • the cooling gas can be blown to the ultraviolet transmission window 53, so that the ultraviolet transmission window 53 can be cooled, the ultraviolet transmission window 53 is heated, and the transmittance is lowered. It can be prevented from doing so. Further, the ultraviolet light source 51 arranged at a position facing the ultraviolet light transmitting window 53 can also be cooled by the cooling gas blown to the ultraviolet transmitting window 53, and the life of the ultraviolet light source 51 can be extended.
  • the cooling gas sprayed on the ultraviolet transmission window 53 is discharged to the outside of the cover 54 through the discharge port (not shown) provided on the case 52 and the cover 54.
  • Ozone is generated by the ultraviolet rays radiated from the ultraviolet light source 51, and the generated ozone is discharged together with the cooling gas through the discharge port.
  • the cooling gas also functions as a purge gas that emits ozone.
  • a cooling mechanism 80 as shown in FIG. 4 may be provided.
  • the cooling mechanism 80 has a single refrigerant flow path 81 through which a liquid refrigerant flows, and the single refrigerant flow path 81 is crawled around the three ultraviolet transmission windows 51 in a single stroke.
  • One end of the refrigerant flow path 81 is a refrigerant supply port 82, and the other end is a refrigerant discharge port 83, and the refrigerant circulates from the refrigerant supply source (not shown) through a pipe (not shown). It is supposed to be done.
  • the refrigerant for example, water can be used, but other liquids may be used. Since the cooling mechanism 80 uses a liquid refrigerant, the cooling efficiency is high.
  • FIG. 5 is a flowchart for explaining a substrate processing method. The following processing operations are performed under the control of the control unit 60.
  • the gate valve 12 is opened, and the substrate W is carried into the processing container 10 by a transport mechanism (not shown) via the carry-in / outlet 11 (step ST1).
  • the carried-in substrate W is delivered from the transport mechanism to the stage 13 via a support pin (not shown) provided on the stage 13.
  • the transport mechanism is retracted from the processing container 10 and the gate valve 12 is closed.
  • the substrate W on the stage 13 is first treated with oxygen radicals (step ST2).
  • the pressure of the treatment space S is adjusted while the treatment space S is exhausted by the exhaust unit 30, and an oxygen-containing gas, for example, oxygen gas is supplied to the treatment space S.
  • the pressure at this time may be in the range of 0.1 Torr to 10 Torr, and the flow rate of the oxygen-containing gas may be 100 sccm to 1500 sccm.
  • the heating temperature of the substrate W by the heater may be 500 to 1000 ° C.
  • ultraviolet rays are radiated from the ultraviolet light source 51 of the ultraviolet irradiation unit 50, and the processing space S is irradiated through the ultraviolet transmission window 53.
  • ultraviolet rays are absorbed by oxygen in the oxygen-containing gas supplied to the processing space S to form oxygen radicals, and the oxygen radicals oxidize the surface of the substrate W.
  • oxygen radical treatment for a desired time, a silicon oxide film having a thickness of 0.2 nm to 2 nm is formed on the surface of the substrate W.
  • the emission of ultraviolet rays from the ultraviolet light source 51 and the introduction of oxygen gas into the treatment space S are stopped, the inside of the treatment container 10 is purged, and the oxygen content in the treatment container 10 is contained. Discharge residual gas such as gas.
  • the substrate W on which the silicon oxide film is formed is subjected to nitrogen radical treatment (step ST3).
  • the pressure of the treatment space S is adjusted while the treatment space S is exhausted by the exhaust unit 30, and the nitrogen radicals generated by the remote plasma supply source 41 of the remote plasma unit 40 are supplied to the treatment space S. ..
  • the pressure in the processing space S at this time may be in the range of 0.01 to 50 Torr.
  • the heating temperature of the substrate W by the heater may be 500 to 1000 ° C. It is preferably carried out at the same temperature as the temperature at the time of oxygen radical treatment.
  • a capacitively coupled plasma is generated by, for example, high frequency power while supplying, for example, 1 to 1000 sccm of nitrogen gas and, for example, 100 to 2000 sccm of inert gas, for example, argon gas as a nitrogen-containing gas in the container.
  • inert gas for example, argon gas
  • the stage 13 is kept rotated by the rotation drive mechanism 19.
  • Such nitrogen radical treatment is performed for a desired time to nitrid the silicon oxide film formed on the substrate W.
  • the supply of nitrogen radicals from the remote plasma supply source 41 is stopped, the inside of the processing container 10 is purged, and the residual gas in the processing container 10 is discharged. Then, the substrate W is carried out from the processing container by the reverse procedure of carrying in.
  • the nitrogen concentration in the membrane may be higher than the standard.
  • the illuminance which is the light irradiation parameter of the ultraviolet rays transmitted through the ultraviolet transmitting window 53, is measured by the illuminance meter 55, and the presence or absence of an abnormality in the ultraviolet transmittance of the ultraviolet transmitting window 53 is determined from the measurement results (step ST4).
  • the illuminance which is a light irradiation parameter, is a parameter related to the irradiation energy of ultraviolet rays, and whether or not the ultraviolet rays irradiated to the oxygen-containing gas in the processing container 10 are sufficient for oxygen radical generation by measuring the illuminance. Can be determined. If the transmittance of the ultraviolet light transmitting window 53 is low, the illuminance of the ultraviolet rays irradiated to the oxygen-containing gas in the processing container 10 is low. Therefore, by measuring the illuminance of the ultraviolet rays irradiated in the processing container 10, the illuminance of the ultraviolet rays is measured. It is possible to grasp the abnormality of the transmittance of the ultraviolet ray transmitting window 53.
  • the illuminance measurement by the illuminance meter 55 may be performed for each processing of the substrate W, may be performed after processing a plurality of substrates W, or may be performed for each lot. It may also be the timing of maintenance. That is, step ST4 is executed after performing the above steps ST1 to 3 a set number of times.
  • step ST4 can be performed by the procedure shown in FIG.
  • a reference value of the illuminance after passing through the ultraviolet transmission window 53 is set in the control unit 60 (step ST11).
  • the reference value is, for example, a value obtained by adding a preset allowable value to the illuminance value measured by the illuminance meter 55 for the ultraviolet rays transmitted through the new ultraviolet ray transmitting window, for example, in which the transmittance is not lowered. ..
  • ultraviolet rays are irradiated from the ultraviolet light source 51 at the timing when the processing is not performed in the processing container 10, and the illuminance of the ultraviolet rays is measured by the illuminometer 55 (step ST12).
  • the timing at which the processing is not performed is, for example, before the substrate W is carried into the processing container 10, or after the substrate W is carried out.
  • the inside of the processing container 10 is, for example, an inert gas atmosphere.
  • the measured value of the illuminance measured by the illuminance meter 55 in the control unit 60 is compared with the reference value (step ST13). Then, when the measured value is equal to or higher than the reference value, it is determined that the transmittance of the ultraviolet transmissive window 53 is normal (step ST14). On the other hand, when the measured value is lower than the reference value, it is determined that the transmittance of the ultraviolet light transmitting window 53 is abnormal (step ST15).
  • the ultraviolet ray transmitting window 53 is cleaned or the ultraviolet ray transmitting window 53 is replaced.
  • the ultraviolet transmittance of the ultraviolet transmitting window 53 was normal or abnormal, based on the illuminance measured by the illuminance meter 55 when the ultraviolet transmitting window 53 was normal.
  • the illuminance of the light source illuminance meter 56 that directly measures the illuminance of the ultraviolet light source 51 can also be used as a reference. That is, it is also possible to monitor whether the ultraviolet transmittance of the ultraviolet transmitting window 53 is normal or abnormal from the measured value of the illuminance meter 55 and the measured value of the light source illuminance meter 56.
  • the illuminance measured by the illuminance meter 55 and the illuminance measured by the illuminance meter 56 for a light source are compared, and when these differences are equal to or less than a specific value, it is determined that the transmittance of the ultraviolet transmission window 53 is normal. If it is larger than a specific difference, it may be determined that the transmittance of the ultraviolet transmission window 53 is abnormal.
  • an index showing the relationship between the illuminance measured by the illuminance meter 55 and the illuminance measured by the illuminance meter 56 for the light source for example, measured by the illuminance meter 55 with respect to the illuminance (I2) measured by the illuminance meter 56 for the light source.
  • the ratio (I1 / I2) of the illuminance (I1) may be calculated, and it may be determined from the value whether the transmittance of the ultraviolet light transmitting window 53 is normal or abnormal.
  • oxygen radical treatment is performed by oxygen radicals formed by irradiating oxygen gas with ultraviolet rays and then nitrogen radical treatment is performed by remote plasma treatment is shown, but only oxygen radical treatment is performed. It may be what you do.
  • oxygen radical treatment is performed by oxygen radicals formed by irradiating oxygen gas with ultraviolet rays and then nitrogen radical treatment is performed by remote plasma treatment is shown, but only oxygen radical treatment is performed. It may be what you do.
  • a silicon oxide film is formed by oxygen radical treatment is shown, the present invention is not limited to the silicon oxide film.
  • the illuminance is measured as the light irradiation parameter of the ultraviolet rays transmitted from the ultraviolet light source through the ultraviolet transmission window and the ultraviolet rays directly irradiated from the ultraviolet light source is shown, but the present invention is not limited to this. Parameters such as illuminance and amount of light may be measured.
  • Substrate processing device, 10 Processing container, 13; Stage, 20; Gas supply mechanism, 21; Gas supply source, 22; Gas supply pipe, 23; Gas introduction unit, 30; Exhaust unit, 40; Remote plasma supply mechanism , 50; UV irradiation unit, 51; UV light source, 53; UV transmission window, 55; luminometer, 56; light source luminometer, 60; control unit, W; substrate

Abstract

This substrate treating device comprises: a treating container that houses a substrate; a gas supply mechanism for supplying an oxygen-containing gas into the treating container; and an ultraviolet ray irradiation unit that emits ultraviolet rays into the treating container and generating oxygen radicals in the treating container. The ultraviolet ray irradiation unit has an ultraviolet ray source that emits ultraviolet rays from the outside of the treating container into the treating container; an ultraviolet ray transmission window through which the ultraviolet rays emitted from the ultraviolet ray source is transmitted into the treating container; and a first optical measuring instrument that measures a light irradiation parameter of the ultraviolet rays transmitted through the ultraviolet ray transmission window and emitted into the treating container.

Description

基板処理装置、基板処理方法、および紫外線照射ユニットSubstrate processing equipment, substrate processing method, and UV irradiation unit
　本開示は、基板処理装置、基板処理方法、および紫外線照射ユニットに関する。 The present disclosure relates to a substrate processing apparatus, a substrate processing method, and an ultraviolet irradiation unit.
　紫外線光源（紫外線ランプ）から紫外線透過窓を介して処理容器に紫外線を照射し、酸素含有ガスのラジカルを生成して基板に酸化処理を行う技術が知られている（例えば特許文献１、２）。 A technique is known in which an ultraviolet light source (ultraviolet lamp) irradiates a processing container with ultraviolet rays through an ultraviolet transmission window to generate radicals of oxygen-containing gas to perform oxidation treatment on a substrate (for example, Patent Documents 1 and 2). ..
　特許文献１には、紫外線ランプを収納するランプハウスに光量センサを挿入して紫外線ランプの光量を測定することが記載されている。また、特許文献２には、紫外線照射により生成された酸素含有ガスのラジカルを用いて酸化膜を形成し、当該酸化膜に対し、リモートプラズマを用いてラジカル窒化処理を行う基板処理装置が記載されている。 Patent Document 1 describes that a light amount sensor is inserted into a lamp house that houses an ultraviolet lamp to measure the light amount of the ultraviolet lamp. Further, Patent Document 2 describes a substrate processing apparatus that forms an oxide film using radicals of an oxygen-containing gas generated by irradiation with ultraviolet rays and performs radical nitriding treatment on the oxide film using remote plasma. ing.
特開２０００－３４９０７９号公報Japanese Unexamined Patent Publication No. 2000-349079 特開２０２０－１５０２３８号公報Japanese Unexamined Patent Publication No. 2020-150238
　本開示は、紫外線透過窓を介して処理容器内に適切に紫外線を照射して基板に処理を行える基板処理装置、基板処理方法、および紫外線照射ユニットを提供する。 The present disclosure provides a substrate processing apparatus, a substrate processing method, and an ultraviolet irradiation unit capable of appropriately irradiating a processing container with ultraviolet rays through an ultraviolet transmission window to process the substrate.
　本開示の一態様に係る基板処理装置は、基板に処理を施す基板処理装置であって、基板を収容する処理容器と、前記処理容器内に酸素含有ガスを供給するガス供給機構と、前記処理容器内に紫外線を照射して前記処理容器内に酸素ラジカルを生成する紫外線照射ユニットと、を備え、前記紫外線照射ユニットは、前記処理容器の外部から前記処理容器内に紫外線を放射する紫外線光源と、前記紫外線光源から放射された紫外線を前記処理容器内に透過する紫外線透過窓と、前記紫外線透過窓を透過し前記処理容器内に照射される紫外線の光照射パラメータを測定する第１の光測定器と、を有する。 The substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus that processes a substrate, and includes a processing container for accommodating the substrate, a gas supply mechanism for supplying an oxygen-containing gas into the processing container, and the processing. The container is provided with an ultraviolet irradiation unit that irradiates the inside of the container with ultraviolet rays to generate oxygen radicals in the processing container, and the ultraviolet irradiation unit includes an ultraviolet light source that radiates ultraviolet rays from the outside of the processing container into the processing container. First light measurement for measuring the light irradiation parameters of the ultraviolet light transmitting window that transmits the ultraviolet rays emitted from the ultraviolet light source into the processing container and the ultraviolet rays that pass through the ultraviolet transmitting window and are irradiated into the processing container. It has a vessel and.
　本開示によれば、紫外線透過窓を介して処理容器内に適切に紫外線を照射して基板に処理を行える基板処理装置、基板処理方法、および紫外線照射ユニットが提供される。 According to the present disclosure, a substrate processing apparatus, a substrate processing method, and an ultraviolet irradiation unit capable of appropriately irradiating a processing container with ultraviolet rays through an ultraviolet transmission window to process the substrate are provided.
一実施形態に係る基板処理装置の構成の概略を模式的に示す縦断面図である。It is a vertical sectional view schematically showing the outline of the structure of the substrate processing apparatus which concerns on one Embodiment. 一実施形態に係る基板処理装置の構成の概略を模式的に示す横断面図である。It is a cross-sectional view schematically showing the outline of the structure of the substrate processing apparatus which concerns on one Embodiment. 冷却機構の一例を示す図である。It is a figure which shows an example of a cooling mechanism. 冷却機構の他の例を示す図である。It is a figure which shows another example of a cooling mechanism. 基板処理方法の一例を説明するためのフローチャートである。It is a flowchart for demonstrating an example of a substrate processing method. 基板処理方法の一例の要部を具体的に示すフローチャートである。It is a flowchart which shows the main part of an example of a substrate processing method concretely.
　以下、添付図面を参照して実施形態について説明する。
　図１および図２は、一実施形態に係る基板処理装置の構成の概略を模式的に示す縦断面図および横断面図である。 Hereinafter, embodiments will be described with reference to the accompanying drawings.
1 and 2 are a vertical sectional view and a horizontal sectional view schematically showing an outline of the configuration of the substrate processing apparatus according to the embodiment.
　本実施形態の基板処理装置は、基板Ｗの表面に紫外光ラジカル酸化処理によりシリコン酸化膜を形成し、続いてリモートプラズマラジカル窒化処理を行い上記シリコン酸化膜の表面を窒化するものである。基板Ｗとしては、表面にシリコンを有するものであればよく、典型的にはシリコンウエハを挙げることができる。 The substrate processing apparatus of the present embodiment forms a silicon oxide film on the surface of the substrate W by ultraviolet light radical oxidation treatment, and then performs remote plasma radical nitriding treatment to nitrid the surface of the silicon oxide film. The substrate W may be any as long as it has silicon on its surface, and a silicon wafer can be typically mentioned.
　図１に示すように、基板処理装置１は、処理容器１０と、ガス供給機構２０と、排気部３０と、リモートプラズマユニット４０と、紫外線照射ユニット５０と、制御部６０とを有する。 As shown in FIG. 1, the substrate processing device 1 includes a processing container 10, a gas supply mechanism 20, an exhaust unit 30, a remote plasma unit 40, an ultraviolet irradiation unit 50, and a control unit 60.
　処理容器１０は、基板Ｗを収容して処理を行うためのものであり、金属材料で構成され、直方体形状をなしている。処理容器１０の内部は、基板Ｗを処理する処理空間Ｓを有し、減圧可能に構成されている。なお、図１および図２において、処理容器１０の長さ方向をＸ方向、長さ方向に直交する幅方向をＹ方向、高さ方向をＺ方向とする。 The processing container 10 is for accommodating the substrate W for processing, is made of a metal material, and has a rectangular parallelepiped shape. The inside of the processing container 10 has a processing space S for processing the substrate W, and is configured to be decompressible. In FIGS. 1 and 2, the length direction of the processing container 10 is the X direction, the width direction orthogonal to the length direction is the Y direction, and the height direction is the Z direction.
　処理容器１０の一つの側壁１０ａ１には、基板Ｗの搬入出口１１が設けられており、この搬入出口１１には、当該搬入出口１１を開閉するゲートバルブ１２が設けられている。 One side wall 10a1 of the processing container 10 is provided with a carry-in outlet 11 for the substrate W, and the carry-in outlet 11 is provided with a gate valve 12 for opening and closing the carry-in outlet 11.
　処理容器１０内には、基板Ｗを載置するステージ１３が設けられている。ステージ１３は、上面が基板Ｗを水平に載置する載置面１３ａとなっている。図示の例では、基板Ｗが円形をなし、載置面１３ａも基板Ｗに適合するように円形をなしている。基板処理装置１は、基板Ｗを加熱するためのヒータ（図示せず）を有している。ヒータは例えばステージ１３に設けられている。ステージ１３の下面の中心には回転軸１３ｂが接続されている。回転軸１３ｂは処理容器１０の底壁１０ｂを貫通して処理容器１０の下方に延びており、回転駆動機構１９に接続されている。したがって、回転駆動機構１９により回転軸１３ｂを介してステージ１３が回転される。回転軸１３ｂと処理容器１０の底壁１０ｂとの間は、磁性流体シール等により気密にシールされている。 A stage 13 on which the substrate W is placed is provided in the processing container 10. The upper surface of the stage 13 is a mounting surface 13a on which the substrate W is horizontally mounted. In the illustrated example, the substrate W has a circular shape, and the mounting surface 13a also has a circular shape so as to fit the substrate W. The substrate processing apparatus 1 has a heater (not shown) for heating the substrate W. The heater is provided on the stage 13, for example. A rotation shaft 13b is connected to the center of the lower surface of the stage 13. The rotary shaft 13b penetrates the bottom wall 10b of the processing container 10 and extends below the processing container 10 and is connected to the rotation drive mechanism 19. Therefore, the rotation drive mechanism 19 rotates the stage 13 via the rotation shaft 13b. The rotation shaft 13b and the bottom wall 10b of the processing container 10 are hermetically sealed by a magnetic fluid seal or the like.
　ガス供給機構２０は、ガスを供給するガス供給源２１と、ガス供給源２１に一端が接続されガスを処理容器１０内に供給するガス供給管２２と、処理容器１０内に設けられ、ガス供給管２２の他端に接続されたガス導入部２３とを有する。ガス供給源２１は、酸素ガス等の酸素含有ガス、および調圧ガスおよびパージガスとして用いる不活性ガスを供給する。 The gas supply mechanism 20 is provided in a gas supply source 21 for supplying gas, a gas supply pipe 22 having one end connected to the gas supply source 21 to supply gas into the processing container 10, and a gas supply in the processing container 10. It has a gas introduction unit 23 connected to the other end of the pipe 22. The gas supply source 21 supplies an oxygen-containing gas such as oxygen gas, and an inert gas used as a pressure regulating gas and a purge gas.
　ガス供給管２２は、搬入出口１１が形成された一つの側壁１０ａ１に対向する側壁１０ａ２の上部から処理容器１０内に挿通されている。ガス導入部２３は、処理容器１０内の上部のステージ１３の外側位置に、処理容器１０の幅方向（図中Ｙ方向）に沿って延在している。ガス導入部２３には、図２に示すように、複数の噴射口２３ａが幅方向（Ｙ方向）に並ぶように形成されている。したがって、ガス供給源２１から供給された酸素含有ガスは、ガス供給管２２を通ってガス導入部２３に至り、噴射口２３ａから処理空間Ｓへ吐出されるように構成されている。 The gas supply pipe 22 is inserted into the processing container 10 from the upper part of the side wall 10a2 facing the one side wall 10a1 on which the carry-in outlet 11 is formed. The gas introduction portion 23 extends along the width direction (Y direction in the drawing) of the processing container 10 to the outer position of the upper stage 13 in the processing container 10. As shown in FIG. 2, the gas introduction portion 23 is formed so that a plurality of injection ports 23a are arranged in the width direction (Y direction). Therefore, the oxygen-containing gas supplied from the gas supply source 21 is configured to reach the gas introduction unit 23 through the gas supply pipe 22 and to be discharged from the injection port 23a to the processing space S.
　排気部３０は、処理容器１０の底壁１０ｂに形成された排気孔１５に接続される排気管３１と、排気管３１を介して処理空間Ｓを排気する真空ポンプや自動制御バルブを含む排気装置３２とを有する。排気孔１５は、底壁１０ｂのステージ１３外側の搬入出口１１側の位置に幅方向（Ｙ方向）に延在するように形成されている。排気管３１は上端が排気孔１５の幅に対応して広くなっている。 The exhaust unit 30 includes an exhaust pipe 31 connected to an exhaust hole 15 formed in the bottom wall 10b of the processing container 10, a vacuum pump for exhausting the processing space S via the exhaust pipe 31, and an automatic control valve. 32 and. The exhaust hole 15 is formed so as to extend in the width direction (Y direction) at a position on the carry-in outlet 11 side of the bottom wall 10b outside the stage 13. The upper end of the exhaust pipe 31 is widened corresponding to the width of the exhaust hole 15.
　上記のように、ガス導入部２３がステージ１３の一方側にＹ方向に延在し、排気孔１５がステージ１３の他方側にＹ方向に延在しているため、ガス導入部２３から導入された酸素含有ガスはステージ１３上を通過し排気孔１５に向かうように流れる。 As described above, since the gas introduction section 23 extends in the Y direction on one side of the stage 13, and the exhaust hole 15 extends in the Y direction on the other side of the stage 13, it is introduced from the gas introduction section 23. The oxygen-containing gas passes over the stage 13 and flows toward the exhaust hole 15.
　リモートプラズマユニット４０は、リモートプラズマ供給源４１と、リモートプラズマ供給源４１から処理容器１０内へ窒素ラジカルを供給するラジカル供給管４２とを有する。リモートプラズマ供給源４１は、アルゴンガス等の不活性ガス（希ガス）と窒素ガス等の窒素含有ガスが供給され、適宜のプラズマ生成機構により生成されたプラズマ（例えば容量結合プラズマ）により、窒素ラジカルを生成する。ラジカル供給管４２は、一端がリモートプラズマ供給源４１に接続され、他端が側壁１０ａ２に形成された供給孔１６に接続されており、リモートプラズマ供給源４１で生成された窒素ラジカルがラジカル供給管４２および供給孔１６を介して処理容器１０内の処理空間Ｓに供給される。 The remote plasma unit 40 has a remote plasma supply source 41 and a radical supply pipe 42 that supplies nitrogen radicals from the remote plasma supply source 41 into the processing container 10. The remote plasma supply source 41 is supplied with an inert gas (rare gas) such as argon gas and a nitrogen-containing gas such as nitrogen gas, and a nitrogen radical is generated by a plasma (for example, capacitively coupled plasma) generated by an appropriate plasma generation mechanism. To generate. One end of the radical supply pipe 42 is connected to the remote plasma supply source 41, and the other end is connected to the supply hole 16 formed in the side wall 10a2, and the nitrogen radical generated by the remote plasma supply source 41 is connected to the radical supply pipe. It is supplied to the processing space S in the processing container 10 through the 42 and the supply hole 16.
　紫外線照射ユニット５０は、処理容器１０の上方に設けられた３本の紫外線光源５１と、各紫外線光源５１からの紫外線を処理容器１０へ透過する紫外線透過窓５３と、紫外線透過窓５３を透過した紫外線の光照射パラメータである照度を測定する照度計５５とを有する。 The ultraviolet irradiation unit 50 transmitted through three ultraviolet light sources 51 provided above the processing container 10, an ultraviolet transmitting window 53 that transmits ultraviolet rays from each ultraviolet light source 51 to the processing container 10, and an ultraviolet transmitting window 53. It has an illuminance meter 55 that measures illuminance, which is a light irradiation parameter of ultraviolet rays.
　３本の紫外線光源５１は、線状をなし、ステージ１３の載置面１３ａと対向する領域に、長手方向を処理容器の幅方向（Ｙ方向）にした状態で設けられている。３本の紫外線光源５１は、ステージ１３の直径よりわずかに長く、それぞれ同じ長さを有しており、幅方向（Ｙ方向）端部位置が同じ位置になるようにして、処理容器１０の長さ方向（Ｘ方向）に配列されている。また、３本の紫外線光源５１は、互いにステージ１３上の基板ＷまでのＺ方向の距離が等しくなるように設けられている。 The three ultraviolet light sources 51 are linear and are provided in a region facing the mounting surface 13a of the stage 13 in a state where the longitudinal direction is the width direction (Y direction) of the processing container. The three ultraviolet light sources 51 are slightly longer than the diameter of the stage 13, and each has the same length. The length of the processing container 10 is set so that the end positions in the width direction (Y direction) are at the same position. They are arranged in the vertical direction (X direction). Further, the three ultraviolet light sources 51 are provided so that the distances in the Z direction to the substrate W on the stage 13 are equal to each other.
　３本の紫外線光源５１は、波長や最大出力等の特性が互いに等しい同種のものであり、例えば波長が１７２ｎｍの紫外線を放射するものである。さらに、３本の紫外線光源５１は、酸化膜の形成時には、各紫外線光源５１からの出力が互い等しくなるよう制御される。 The three ultraviolet light sources 51 are of the same type having the same characteristics such as wavelength and maximum output, and emit ultraviolet rays having a wavelength of 172 nm, for example. Further, the three ultraviolet light sources 51 are controlled so that the outputs from the respective ultraviolet light sources 51 are equal to each other when the oxide film is formed.
　また、３本の紫外線光源５１は、平面視において、いずれもステージ１３の回転軸１３ｂすなわち当該ステージ１３に載置された基板Ｗの中心上に位置せず、基板Ｗの中心からオフセットされている。 Further, in the plan view, none of the three ultraviolet light sources 51 is located on the rotation axis 13b of the stage 13, that is, on the center of the substrate W mounted on the stage 13, and is offset from the center of the substrate W. ..
　紫外線光源５１から放射された紫外線は、処理容器１０の天井壁１０ｃに設けられた開口部１７を通過し、さらに紫外線透過窓５３を透過して処理容器１０内に照射される。 The ultraviolet rays emitted from the ultraviolet light source 51 pass through the opening 17 provided in the ceiling wall 10c of the processing container 10, further pass through the ultraviolet transmission window 53, and are irradiated into the processing container 10.
　紫外線透過窓５３は、各紫外線光源５１に対応して３つ設けられており、紫外線光源５１と同程度の長さを有している。紫外線透過窓５３は、紫外線を透過する材料、例えば石英で構成されている。 Three ultraviolet light transmitting windows 53 are provided corresponding to each ultraviolet light source 51, and have the same length as the ultraviolet light source 51. The ultraviolet ray transmitting window 53 is made of a material that transmits ultraviolet rays, for example, quartz.
　照度計５５は、側壁１０ａ１および側壁１０ａ２の間の側壁１０ａ３に形成された孔１８に接続されており、孔１８から導かれる光の照度を測定する。孔１８は、側壁１０ａ３の、３本の紫外線光源５１のうち最もガス導入部２３に近いものの直下位置に対応した部分に設けられている（図２参照）。なお、孔１８は、他の紫外線光源５１の直下位置に対応した部分に設けられていてもよい。 The illuminance meter 55 is connected to the hole 18 formed in the side wall 10a3 between the side wall 10a1 and the side wall 10a2, and measures the illuminance of the light guided from the hole 18. The hole 18 is provided in the portion of the side wall 10a3 corresponding to the position directly below the one closest to the gas introduction portion 23 among the three ultraviolet light sources 51 (see FIG. 2). The hole 18 may be provided in a portion corresponding to a position directly below the other ultraviolet light source 51.
　照度計５５は、紫外線透過窓５３を透過した紫外線の照度を測定し、その測定値は紫外線透過窓５３の紫外線透過率が正常かどうかを判定するために用いられる。 The illuminance meter 55 measures the illuminance of the ultraviolet rays transmitted through the ultraviolet transmitting window 53, and the measured value is used to determine whether the ultraviolet transmittance of the ultraviolet transmitting window 53 is normal.
　３本の紫外線光源５１は、それぞれケース５２内に収容され、紫外線光源５１からの紫外線は開口部１７以外の方向には射出されないように構成されている。ケース５２内には、光照射パラメータである照度を測定する光源用照度計５６が設けられている。光源用照度計５６は、紫外線光源５１の照度を直接測定して紫外線光源５１の劣化を判定するためのものである。紫外線光源５１を収容した３つのケース５２の外側は、カバー５４で覆われている。 Each of the three ultraviolet light sources 51 is housed in the case 52, and the ultraviolet rays from the ultraviolet light source 51 are configured so as not to be emitted in directions other than the opening 17. A light source illuminance meter 56 for measuring illuminance, which is a light irradiation parameter, is provided in the case 52. The light source illuminance meter 56 is for directly measuring the illuminance of the ultraviolet light source 51 to determine the deterioration of the ultraviolet light source 51. The outside of the three cases 52 containing the ultraviolet light source 51 is covered with a cover 54.
　制御部６０は、基板処理装置１を構成するガス供給機構２０、排気部３０、リモートプラズマユニット４０、紫外線照射ユニット５０、回転駆動機構１９を制御する。制御部６０は、ＣＰＵを有する主制御部と、入力装置、出力装置、表示装置、および記憶装置とを有している。そして、記憶装置の記憶媒体に記憶された処理レシピに基づいて基板処理装置１の処理が制御される。また、制御部６０は、照度計５５の測定結果に基づいて、処理容器１０内に紫外線が適切に照射されているか否かを判定し、紫外線照射ユニット５０の制御部としても機能する。 The control unit 60 controls the gas supply mechanism 20, the exhaust unit 30, the remote plasma unit 40, the ultraviolet irradiation unit 50, and the rotation drive mechanism 19 that constitute the substrate processing device 1. The control unit 60 includes a main control unit having a CPU, an input device, an output device, a display device, and a storage device. Then, the processing of the substrate processing apparatus 1 is controlled based on the processing recipe stored in the storage medium of the storage apparatus. Further, the control unit 60 determines whether or not the processing container 10 is appropriately irradiated with ultraviolet rays based on the measurement result of the illuminance meter 55, and also functions as a control unit of the ultraviolet irradiation unit 50.
　図３に示すように、紫外線照射ユニット５０は、さらに、冷却機構７０を有している。紫外線透過窓５３は、ステージ１３を加熱するためのヒータ（図示せず）からの輻射熱等により高温となることがあり、高温になるとその光透過率が低下してしまう。また、紫外線光源５１は、自身の発熱等により、高温となることがあり、高温のままの状態で使用されるとその寿命が短くなってしまう。そこで、冷却機構７０は、紫外線透過窓５３および紫外線光源５１を冷却するように構成されている。 As shown in FIG. 3, the ultraviolet irradiation unit 50 further has a cooling mechanism 70. The ultraviolet light transmitting window 53 may have a high temperature due to radiant heat from a heater (not shown) for heating the stage 13, and the light transmittance decreases when the temperature becomes high. Further, the ultraviolet light source 51 may have a high temperature due to its own heat generation or the like, and if it is used in a state of high temperature, its life will be shortened. Therefore, the cooling mechanism 70 is configured to cool the ultraviolet transmission window 53 and the ultraviolet light source 51.
　図３に示すように、冷却機構７０は、天井壁１０ｃの開口部１７の周囲に環状に設けられた冷却ガス流路７１と、冷却ガス流路７１から開口部１７に向けて形成されたガス噴出口７２とを有する。ガス噴出口７２は、開口部１７を挟んで対向するように２つ（一対）設けられている。ただし、ガス噴出口７２の数は２つに限らず、３つ以上であってよく、複数対設けられていてもよい。ガス噴出口７２は、紫外線透過窓５３に向かうように下方に傾斜して設けられている。冷却ガス流路７１には、冷却ガス供給源（図示せず）から配管を介して冷却ガスが供給される。冷却ガスとしては、窒素ガスやアルゴンガス等の不活性ガスを用いることができる。 As shown in FIG. 3, the cooling mechanism 70 includes a cooling gas flow path 71 provided in an annular shape around the opening 17 of the ceiling wall 10c, and a gas formed from the cooling gas flow path 71 toward the opening 17. It has a spout 72. Two (pair) of gas outlets 72 are provided so as to face each other with the opening 17 interposed therebetween. However, the number of gas outlets 72 is not limited to two, and may be three or more, and a plurality of pairs may be provided. The gas outlet 72 is provided so as to be inclined downward so as to face the ultraviolet ray transmitting window 53. Cooling gas is supplied to the cooling gas flow path 71 from a cooling gas supply source (not shown) via a pipe. As the cooling gas, an inert gas such as nitrogen gas or argon gas can be used.
　以上のような冷却機構７０を設けることにより、冷却ガスを紫外線透過窓５３に吹きつけることができるので、紫外線透過窓５３を冷却することができ、紫外線透過窓５３が加熱されて透過率が低下することを防止することができる。また、紫外線透過窓５３に吹きつけた冷却ガスにより紫外線透過窓５３に対向する位置に配置されている紫外線光源５１も冷却することができ、紫外線光源５１の寿命を長くすることもできる。 By providing the cooling mechanism 70 as described above, the cooling gas can be blown to the ultraviolet transmission window 53, so that the ultraviolet transmission window 53 can be cooled, the ultraviolet transmission window 53 is heated, and the transmittance is lowered. It can be prevented from doing so. Further, the ultraviolet light source 51 arranged at a position facing the ultraviolet light transmitting window 53 can also be cooled by the cooling gas blown to the ultraviolet transmitting window 53, and the life of the ultraviolet light source 51 can be extended.
　紫外線透過窓５３に吹き付けた冷却ガスは、ケース５２およびカバー５４に設けられた排出口（図示せず）を介してカバー５４の外側へ排出される。紫外線光源５１から放射された紫外線によりオゾンが発生するが、発生したオゾンは冷却ガスとともに排出口を介して排出される。換言すると、冷却ガスはオゾンを排出するパージガスとしても機能する。 The cooling gas sprayed on the ultraviolet transmission window 53 is discharged to the outside of the cover 54 through the discharge port (not shown) provided on the case 52 and the cover 54. Ozone is generated by the ultraviolet rays radiated from the ultraviolet light source 51, and the generated ozone is discharged together with the cooling gas through the discharge port. In other words, the cooling gas also functions as a purge gas that emits ozone.
　冷却機構７０の代わりに、図４に示すような冷却機構８０を設けてもよい。冷却機構８０は、液体状の冷媒が流れる単一の冷媒流路８１を有し、この単一の冷媒流路８１が３つの紫外線透過窓５１の周囲に一筆書き状に這い回されている。冷媒流路８１の一方の端部は冷媒供給ポート８２、他方の端部は冷媒排出ポート８３となっており、冷媒供給源（図示せず）から配管（図示せず）を介して冷媒が循環されるようになっている。冷媒としては例えば水を用いることができるが、他の液体であってもよい。冷却機構８０では液体の冷媒を用いるので冷却効率が高い。 Instead of the cooling mechanism 70, a cooling mechanism 80 as shown in FIG. 4 may be provided. The cooling mechanism 80 has a single refrigerant flow path 81 through which a liquid refrigerant flows, and the single refrigerant flow path 81 is crawled around the three ultraviolet transmission windows 51 in a single stroke. One end of the refrigerant flow path 81 is a refrigerant supply port 82, and the other end is a refrigerant discharge port 83, and the refrigerant circulates from the refrigerant supply source (not shown) through a pipe (not shown). It is supposed to be done. As the refrigerant, for example, water can be used, but other liquids may be used. Since the cooling mechanism 80 uses a liquid refrigerant, the cooling efficiency is high.
　次に、基板処理装置１における基板Ｗの処理方法について説明する。
　図５は基板処理方法を説明するためのフローチャートである。なお、以下の処理動作は、制御部６０による制御のもとで行われる。 Next, a method of processing the substrate W in the substrate processing apparatus 1 will be described.
FIG. 5 is a flowchart for explaining a substrate processing method. The following processing operations are performed under the control of the control unit 60.
　まず、ゲートバルブ１２を開け、搬入出口１１を介して、搬送機構（図示せず）により基板Ｗを処理容器１０内に搬入する（ステップＳＴ１）。搬入された基板Ｗは、ステージ１３に設けられた支持ピン（図示せず）を介して、搬送機構からステージ１３に受け渡される。その後、搬送機構を処理容器１０から退避させ、ゲートバルブ１２を閉じる。 First, the gate valve 12 is opened, and the substrate W is carried into the processing container 10 by a transport mechanism (not shown) via the carry-in / outlet 11 (step ST1). The carried-in substrate W is delivered from the transport mechanism to the stage 13 via a support pin (not shown) provided on the stage 13. After that, the transport mechanism is retracted from the processing container 10 and the gate valve 12 is closed.
　この状態で、ステージ１３上の基板Ｗに対して、最初に酸素ラジカル処理を行う（ステップＳＴ２）。 In this state, the substrate W on the stage 13 is first treated with oxygen radicals (step ST2).
　酸素ラジカル処理に際しては、排気部３０により処理空間Ｓを排気しつつ処理空間Ｓの調圧を行うとともに、酸素含有ガス、例えば酸素ガスを処理空間Ｓへ供給する。このときの圧力は０．１Ｔｏｒｒ～１０Ｔｏｒｒの範囲内であってよく、酸素含有ガスの流量は１００ｓｃｃｍ～１５００ｓｃｃｍであってよい。また、ヒータ（図示せず）による基板Ｗの加熱温度は５００～１０００℃であってよい。 In the oxygen radical treatment, the pressure of the treatment space S is adjusted while the treatment space S is exhausted by the exhaust unit 30, and an oxygen-containing gas, for example, oxygen gas is supplied to the treatment space S. The pressure at this time may be in the range of 0.1 Torr to 10 Torr, and the flow rate of the oxygen-containing gas may be 100 sccm to 1500 sccm. Further, the heating temperature of the substrate W by the heater (not shown) may be 500 to 1000 ° C.
　そして、回転駆動機構１９によりステージ１３を回転しつつ、紫外線照射ユニット５０の紫外線光源５１から紫外線を放射させ、紫外線透過窓５３を介して処理空間Ｓに照射する。これにより、処理空間Ｓに供給された酸素含有ガス中の酸素に紫外線が吸収されて酸素ラジカルが形成され、当該酸素ラジカルにより、基板Ｗの表面が酸化される。このような酸素ラジカル処理が所望の時間実施されることにより、基板Ｗの表面には０．２ｎｍ～２ｎｍの膜厚のシリコン酸化膜が形成される。 Then, while rotating the stage 13 by the rotation drive mechanism 19, ultraviolet rays are radiated from the ultraviolet light source 51 of the ultraviolet irradiation unit 50, and the processing space S is irradiated through the ultraviolet transmission window 53. As a result, ultraviolet rays are absorbed by oxygen in the oxygen-containing gas supplied to the processing space S to form oxygen radicals, and the oxygen radicals oxidize the surface of the substrate W. By carrying out such oxygen radical treatment for a desired time, a silicon oxide film having a thickness of 0.2 nm to 2 nm is formed on the surface of the substrate W.
　酸素ラジカル処理を所望の時間行った後、紫外線光源５１からの紫外線の放射、および、処理空間Ｓへの酸素ガスの導入を停止し、処理容器１０内をパージして処理容器１０内の酸素含有ガス等の残留ガスを排出する。 After performing the oxygen radical treatment for a desired time, the emission of ultraviolet rays from the ultraviolet light source 51 and the introduction of oxygen gas into the treatment space S are stopped, the inside of the treatment container 10 is purged, and the oxygen content in the treatment container 10 is contained. Discharge residual gas such as gas.
　次いで、シリコン酸化膜が形成された基板Ｗに対して、窒素ラジカル処理を行う（ステップＳＴ３）。 Next, the substrate W on which the silicon oxide film is formed is subjected to nitrogen radical treatment (step ST3).
　窒素ラジカル処理に際しては、排気部３０により処理空間Ｓを排気しつつ処理空間Ｓの調圧を行うとともに、リモートプラズマユニット４０のリモートプラズマ供給源４１で生成された窒素ラジカルを処理空間Ｓへ供給する。このときの処理空間Ｓの圧力は０．０１～５０Ｔｏｒｒの範囲内であってよい。また、ヒータ（図示せず）による基板Ｗの加熱温度は５００～１０００℃であってよい。好ましくは酸素ラジカル処理の際の温度と同じ温度で行う。 In the nitrogen radical treatment, the pressure of the treatment space S is adjusted while the treatment space S is exhausted by the exhaust unit 30, and the nitrogen radicals generated by the remote plasma supply source 41 of the remote plasma unit 40 are supplied to the treatment space S. .. The pressure in the processing space S at this time may be in the range of 0.01 to 50 Torr. Further, the heating temperature of the substrate W by the heater (not shown) may be 500 to 1000 ° C. It is preferably carried out at the same temperature as the temperature at the time of oxygen radical treatment.
　リモートプラズマ供給源４１においては、容器内に窒素含有ガスとして例えば窒素ガスを例えば１～１０００ｓｃｃｍ、不活性ガス、例えばアルゴンガスを例えば１００～２０００ｓｃｃｍを供給しつつ、例えば高周波電力によって容量結合プラズマを生成することで、窒素ラジカルが形成される。また、窒素ラジカル処理中も、回転駆動機構１９によりステージ１３を回転させた状態とする。 In the remote plasma supply source 41, a capacitively coupled plasma is generated by, for example, high frequency power while supplying, for example, 1 to 1000 sccm of nitrogen gas and, for example, 100 to 2000 sccm of inert gas, for example, argon gas as a nitrogen-containing gas in the container. By doing so, a nitrogen radical is formed. Further, even during the nitrogen radical treatment, the stage 13 is kept rotated by the rotation drive mechanism 19.
　このような窒素ラジカル処理を所望の時間行って、基板Ｗ上に形成されたシリコン酸化膜を窒化する。 Such nitrogen radical treatment is performed for a desired time to nitrid the silicon oxide film formed on the substrate W.
　窒素ラジカル処理を所望の時間行った後、リモートプラズマ供給源４１からの窒素ラジカルの供給を停止し、処理容器１０内をパージして処理容器１０内の残留ガスを排出する。そして、搬入の際とは逆の手順により基板Ｗを処理容器から搬出する。 After performing the nitrogen radical treatment for a desired time, the supply of nitrogen radicals from the remote plasma supply source 41 is stopped, the inside of the processing container 10 is purged, and the residual gas in the processing container 10 is discharged. Then, the substrate W is carried out from the processing container by the reverse procedure of carrying in.
　ところで、以上の酸素ラジカル処理および窒素ラジカル処理後の基板Ｗについて、膜中の組成分析を行った結果、膜中の窒素濃度が基準よりも高くなることがあることが判明した。 By the way, as a result of the composition analysis in the membrane of the substrate W after the above oxygen radical treatment and nitrogen radical treatment, it was found that the nitrogen concentration in the membrane may be higher than the standard.
　この窒素濃度の上昇は、処理容器１０内に紫外線が適切に照射されず、ラジカル酸化による酸化膜の形成が不十分であることが原因であることが見出された。処理容器１０内に紫外線が適切に照射されない主な原因は紫外線透過窓の透過率の低下にある。 It was found that this increase in nitrogen concentration was caused by insufficient irradiation of ultraviolet rays into the treatment container 10 and insufficient formation of an oxide film by radical oxidation. The main reason why the treatment container 10 is not properly irradiated with ultraviolet rays is the decrease in the transmittance of the ultraviolet ray transmitting window.
　そこで、紫外線透過窓５３を透過した紫外線の光照射パラメータである照度を照度計５５により測定し、測定結果から紫外線透過窓５３の紫外線透過率の異常の有無を判定する（ステップＳＴ４）。 Therefore, the illuminance, which is the light irradiation parameter of the ultraviolet rays transmitted through the ultraviolet transmitting window 53, is measured by the illuminance meter 55, and the presence or absence of an abnormality in the ultraviolet transmittance of the ultraviolet transmitting window 53 is determined from the measurement results (step ST4).
　すなわち、光照射パラメータである照度は、紫外線の照射エネルギーに関係するパラメータであり、照度を測定することにより、処理容器１０内の酸素含有ガスに照射される紫外線が酸素ラジカル生成に十分か否かを判定することができる。そして、紫外線透過窓５３の透過率が低ければ、処理容器１０内の酸素含有ガスに照射される紫外線の照度は低くなるため、処理容器１０内に照射される紫外線の照度を測定することにより、紫外線透過窓５３の透過率の異常を把握することができる。 That is, the illuminance, which is a light irradiation parameter, is a parameter related to the irradiation energy of ultraviolet rays, and whether or not the ultraviolet rays irradiated to the oxygen-containing gas in the processing container 10 are sufficient for oxygen radical generation by measuring the illuminance. Can be determined. If the transmittance of the ultraviolet light transmitting window 53 is low, the illuminance of the ultraviolet rays irradiated to the oxygen-containing gas in the processing container 10 is low. Therefore, by measuring the illuminance of the ultraviolet rays irradiated in the processing container 10, the illuminance of the ultraviolet rays is measured. It is possible to grasp the abnormality of the transmittance of the ultraviolet ray transmitting window 53.
　照度計５５による照度の測定は、基板Ｗの処理ごとに行ってもよいし、基板Ｗを複数枚処理した後に行ってもよいし、ロットごとであってもよい。また、メンテナンスのタイミングであってもよい。すなわち、上記ステップＳＴ１～３を設定された回数行った後にステップＳＴ４が実施される。 The illuminance measurement by the illuminance meter 55 may be performed for each processing of the substrate W, may be performed after processing a plurality of substrates W, or may be performed for each lot. It may also be the timing of maintenance. That is, step ST4 is executed after performing the above steps ST1 to 3 a set number of times.
　ステップＳＴ４は、具体的には、図６に示す手順で行うことができる。
　まず、制御部６０に紫外線透過窓５３を透過した後の照度の基準値を設定する（ステップＳＴ１１）。基準値は、例えば、透過率の低下が発生していない例えば新品の紫外線透過窓を透過した紫外線を照度計５５で測定した照度の値に対して予め設定された許容値を加えた値とする。 Specifically, step ST4 can be performed by the procedure shown in FIG.
First, a reference value of the illuminance after passing through the ultraviolet transmission window 53 is set in the control unit 60 (step ST11). The reference value is, for example, a value obtained by adding a preset allowable value to the illuminance value measured by the illuminance meter 55 for the ultraviolet rays transmitted through the new ultraviolet ray transmitting window, for example, in which the transmittance is not lowered. ..
　次に、処理容器１０内で処理を行っていないタイミングで紫外線光源５１から紫外線を照射し、照度計５５により紫外線の照度を測定する（ステップＳＴ１２）。処理を行っている際には、酸素ラジカルや窒素ラジカルが存在し、照度を正確に測定することが困難である。処理を行っていないタイミングは、例えば、基板Ｗを処理容器１０に搬入する前、基板Ｗを搬出した後等である。照度を測定する際には、処理容器１０内は例えば不活性ガス雰囲気とされる。 Next, ultraviolet rays are irradiated from the ultraviolet light source 51 at the timing when the processing is not performed in the processing container 10, and the illuminance of the ultraviolet rays is measured by the illuminometer 55 (step ST12). During the treatment, oxygen radicals and nitrogen radicals are present, and it is difficult to accurately measure the illuminance. The timing at which the processing is not performed is, for example, before the substrate W is carried into the processing container 10, or after the substrate W is carried out. When measuring the illuminance, the inside of the processing container 10 is, for example, an inert gas atmosphere.
　次に、制御部６０において照度計５５で測定された照度の測定値と基準値とを比較する（ステップＳＴ１３）。そして、測定値が基準値以上の場合は紫外線透過窓５３の透過率が正常と判定する（ステップＳＴ１４）。一方、測定値が基準値より低い場合は紫外線透過窓５３の透過率が異常と判定する（ステップＳＴ１５）。 Next, the measured value of the illuminance measured by the illuminance meter 55 in the control unit 60 is compared with the reference value (step ST13). Then, when the measured value is equal to or higher than the reference value, it is determined that the transmittance of the ultraviolet transmissive window 53 is normal (step ST14). On the other hand, when the measured value is lower than the reference value, it is determined that the transmittance of the ultraviolet light transmitting window 53 is abnormal (step ST15).
　紫外線透過窓５３の透過率が異常と判定された場合は、紫外線透過窓５３をクリーニングするか、または紫外線透過窓５３を交換する。 If it is determined that the transmittance of the ultraviolet ray transmitting window 53 is abnormal, the ultraviolet ray transmitting window 53 is cleaned or the ultraviolet ray transmitting window 53 is replaced.
　本例により、紫外線透過窓５３の透過率が異常のまま基板Ｗの処理を継続することが防止され、基板Ｗに対して適切に紫外線を照射して酸素ラジカル処理を行うことができる。 According to this example, it is possible to prevent the substrate W from continuing the treatment while the transmittance of the ultraviolet transmission window 53 is abnormal, and it is possible to appropriately irradiate the substrate W with ultraviolet rays to perform oxygen radical treatment.
　以上の例では、紫外線透過窓５３が正常なときに照度計５５で測定される照度を基準として、紫外線透過窓５３の紫外線透過率が正常か異常かをモニタした。しかし、紫外線光源５１の照度を直接測定する光源用照度計５６の照度を基準として用いることもできる。すなわち、照度計５５の測定値と光源用照度計５６の測定値から紫外線透過窓５３の紫外線透過率が正常か異常かをモニタすることもできる。 In the above example, it was monitored whether the ultraviolet transmittance of the ultraviolet transmitting window 53 was normal or abnormal, based on the illuminance measured by the illuminance meter 55 when the ultraviolet transmitting window 53 was normal. However, the illuminance of the light source illuminance meter 56 that directly measures the illuminance of the ultraviolet light source 51 can also be used as a reference. That is, it is also possible to monitor whether the ultraviolet transmittance of the ultraviolet transmitting window 53 is normal or abnormal from the measured value of the illuminance meter 55 and the measured value of the light source illuminance meter 56.
　例えば、照度計５５で測定された照度と光源用照度計５６で測定された照度とを比較し、これらの差が特定の値以下の場合に紫外線透過窓５３の透過率が正常と判定し、特定の差より大きい場合に紫外線透過窓５３の透過率が異常と判定してもよい。 For example, the illuminance measured by the illuminance meter 55 and the illuminance measured by the illuminance meter 56 for a light source are compared, and when these differences are equal to or less than a specific value, it is determined that the transmittance of the ultraviolet transmission window 53 is normal. If it is larger than a specific difference, it may be determined that the transmittance of the ultraviolet transmission window 53 is abnormal.
　また、照度計５５で測定された照度と光源用照度計５６で測定された照度との関係を示す指標、例えば、光源用照度計５６で測定された照度（Ｉ２）に対する照度計５５で測定された照度（Ｉ１）の比（Ｉ１／Ｉ２）を算出し、その値から紫外線透過窓５３の透過率が正常か異常かどうかを判定してもよい。 Further, an index showing the relationship between the illuminance measured by the illuminance meter 55 and the illuminance measured by the illuminance meter 56 for the light source, for example, measured by the illuminance meter 55 with respect to the illuminance (I2) measured by the illuminance meter 56 for the light source. The ratio (I1 / I2) of the illuminance (I1) may be calculated, and it may be determined from the value whether the transmittance of the ultraviolet light transmitting window 53 is normal or abnormal.
　なお、光源用照度計５６で測定された照度により、紫外線光源５１が正常か異常かを判定することもできる。 It is also possible to determine whether the ultraviolet light source 51 is normal or abnormal based on the illuminance measured by the light source illuminance meter 56.
　以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 Although the embodiments have been described above, the embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.
　例えば、上記実施形態では、酸素ガスに紫外線を照射して形成された酸素ラジカルにより酸素ラジカル処理を行った後、リモートプラズマ処理により窒素ラジカル処理を行った例について示したが、酸素ラジカル処理のみを行うものであってもよい。また、酸素ラジカル処理によりシリコン酸化膜を形成する場合について示したが、シリコン酸化膜に限らない。 For example, in the above embodiment, an example in which oxygen radical treatment is performed by oxygen radicals formed by irradiating oxygen gas with ultraviolet rays and then nitrogen radical treatment is performed by remote plasma treatment is shown, but only oxygen radical treatment is performed. It may be what you do. Further, although the case where a silicon oxide film is formed by oxygen radical treatment is shown, the present invention is not limited to the silicon oxide film.
　また、上記実施形態では、紫外線光源から紫外線透過窓を透過した紫外線、および紫外線光源から直接照射される紫外線の光照射パラメータとして照度を測定する場合を示したが、これに限らず他の光照射パラメータ、例えば光度や光量を測定してもよい。 Further, in the above embodiment, the case where the illuminance is measured as the light irradiation parameter of the ultraviolet rays transmitted from the ultraviolet light source through the ultraviolet transmission window and the ultraviolet rays directly irradiated from the ultraviolet light source is shown, but the present invention is not limited to this. Parameters such as illuminance and amount of light may be measured.
　１；基板処理装置、１０；処理容器、１３；ステージ、２０；ガス供給機構、２１；ガス供給源、２２；ガス供給管、２３；ガス導入部、３０；排気部、４０；リモートプラズマ供給機構、５０；紫外線照射ユニット、５１；紫外線光源、５３；紫外線透過窓、５５；照度計、５６；光源用照度計、６０；制御部、Ｗ；基板 1; Substrate processing device, 10; Processing container, 13; Stage, 20; Gas supply mechanism, 21; Gas supply source, 22; Gas supply pipe, 23; Gas introduction unit, 30; Exhaust unit, 40; Remote plasma supply mechanism , 50; UV irradiation unit, 51; UV light source, 53; UV transmission window, 55; luminometer, 56; light source luminometer, 60; control unit, W; substrate

Claims (20)

  1. 　基板に処理を施す基板処理装置であって、
    　基板を収容する処理容器と、
    　前記処理容器内に酸素含有ガスを供給するガス供給機構と、
    　前記処理容器内に紫外線を照射して前記処理容器内に酸素ラジカルを生成する紫外線照射ユニットと、
    を備え、
    　前記紫外線照射ユニットは、
    　前記処理容器の外部から前記処理容器内に紫外線を放射する紫外線光源と、
    　前記紫外線光源から放射された紫外線を前記処理容器内に透過する紫外線透過窓と、
    　前記紫外線透過窓を透過し前記処理容器内に照射される紫外線の光照射パラメータを測定する第１の光測定器と、
    を有する、基板処理装置。     A board processing device that processes a board.
    A processing container for accommodating the substrate and
    A gas supply mechanism that supplies oxygen-containing gas into the processing container,
    An ultraviolet irradiation unit that irradiates the processing container with ultraviolet rays to generate oxygen radicals in the processing container,
    Equipped with
    The ultraviolet irradiation unit is
    An ultraviolet light source that radiates ultraviolet rays from the outside of the processing container into the processing container,
    An ultraviolet transmission window that transmits ultraviolet rays radiated from the ultraviolet light source into the processing container, and
    A first optical measuring instrument that measures the light irradiation parameters of ultraviolet rays that pass through the ultraviolet transmission window and are irradiated into the processing container.
    A board processing device.
  2. 　制御部をさらに備え、前記制御部は、前記第１の光測定器の測定結果に基づいて前記紫外線透過窓の紫外線透過率が正常かどうかを判定する、請求項１に記載の基板処理装置。 The substrate processing apparatus according to claim 1, further comprising a control unit, wherein the control unit determines whether or not the ultraviolet transmittance of the ultraviolet transmission window is normal based on the measurement result of the first optical measuring device.
  3. 　前記制御部は、前記第１の光測定器の前記光照射パラメータの測定値が基準値よりも低い場合に、前記紫外線透過窓の紫外線透過率が異常であると判定する、請求項２に記載の基板処理装置。 The second aspect of claim 2, wherein the control unit determines that the ultraviolet transmittance of the ultraviolet transmission window is abnormal when the measured value of the light irradiation parameter of the first light measuring device is lower than the reference value. Substrate processing equipment.
  4. 　前記光照射パラメータは照度であり、前記第１の光測定器は照度計である、請求項１から請求項３のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the light irradiation parameter is illuminance, and the first optical measuring instrument is an illuminance meter.
  5. 　前記紫外線光源の光照射パラメータを直接測定する第２の光測定器をさらに備え、前記制御部は、前記第１の光測定器の測定結果と、前記第２の光測定器の測定結果とに基づいて前記紫外線透過窓の紫外線透過率が正常かどうかを判定する、請求項２に記載の基板処理装置。 Further, a second light measuring device for directly measuring the light irradiation parameter of the ultraviolet light source is further provided, and the control unit uses the measurement result of the first light measuring device and the measurement result of the second light measuring device. The substrate processing apparatus according to claim 2, wherein it is determined whether or not the ultraviolet transmittance of the ultraviolet transmitting window is normal based on the above.
  6. 　前記制御部は、前記第１の光測定器の光照射パラメータの測定値と、前記第２の光測定器の光照射パラメータの測定値を比較し、これらの差が特定の値以下の場合に前記紫外線透過窓の透過率が正常と判定し、前記特定の値より大きい場合に前記紫外線透過窓の透過率が異常と判定する、請求項５に記載の基板処理装置。 The control unit compares the measured value of the light irradiation parameter of the first light measuring device with the measured value of the light irradiation parameter of the second light measuring device, and when the difference between them is a specific value or less. The substrate processing apparatus according to claim 5, wherein it is determined that the transmittance of the ultraviolet light transmitting window is normal, and when it is larger than the specific value, the transmittance of the ultraviolet light transmitting window is determined to be abnormal.
  7. 　前記制御部は、前記第１の光測定器の光照射パラメータの測定値と、前記第２の光測定器の光照射パラメータの測定値との関係を示す指標を算出し、その値から前記紫外線透過窓の透過率が正常かどうかを判定する、請求項５に記載の基板処理装置。 The control unit calculates an index showing the relationship between the measured value of the light irradiation parameter of the first light measuring device and the measured value of the light irradiation parameter of the second light measuring device, and the ultraviolet ray is obtained from the value. The substrate processing apparatus according to claim 5, wherein it is determined whether or not the transmittance of the transmission window is normal.
  8. 　前記指標は、前記第２の光測定器で測定された光照射パラメータ（Ｉ２）に対する前記第１の光測定器で測定された光照射パラメータ（Ｉ１）の比（Ｉ１／Ｉ２）である、請求項７に記載の基板処理装置。 The index is a ratio (I1 / I2) of the light irradiation parameter (I1) measured by the first optical measuring instrument to the light irradiation parameter (I2) measured by the second optical measuring instrument. Item 7. The substrate processing apparatus according to Item 7.
  9. 　前記光照射パラメータは照度であり、前記第１の光測定器および前記第２の光測定器は照度計である、請求項５から請求項８のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 5 to 8, wherein the light irradiation parameter is illuminance, and the first light measuring device and the second light measuring device are illuminance meters.
  10. 　前記処理容器内に窒素ラジカルを供給するリモートプラズマユニットをさらに備える、請求項１から請求項９のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 9, further comprising a remote plasma unit that supplies nitrogen radicals into the processing container.
  11. 　基板に処理を施す基板処理方法であって、
    　基板を処理容器内に設けることと、
    　前記処理容器内に酸素含有ガスを供給しつつ、前記処理容器の外部に設けられた紫外線光源から紫外線透過窓を介して前記処理容器内に紫外線を照射して酸素ラジカルを生成し、前記処理容器内の前記基板に酸素ラジカル処理を行うことと、
    　第１の光測定器により前記紫外線光源から前記紫外線透過窓を透過して前記処理容器内に照射した紫外線の光照射パラメータを測定し、その測定値から前記紫外線透過窓の紫外線透過率が正常かどうかを判定することと、
    を有する基板処理方法。     It is a substrate processing method that processes the substrate.
    Placing the substrate inside the processing container and
    While supplying oxygen-containing gas into the processing container, an ultraviolet light source provided outside the processing container irradiates the inside of the processing container with ultraviolet rays through an ultraviolet transmission window to generate oxygen radicals, and the processing container is generated. By performing oxygen radical treatment on the substrate inside,
    The light irradiation parameter of the ultraviolet rays transmitted from the ultraviolet light source through the ultraviolet transmitting window and irradiated into the processing container is measured by the first optical measuring device, and whether the ultraviolet transmittance of the ultraviolet transmitting window is normal from the measured values. Judging whether or not
    Substrate processing method having.
  12. 　前記紫外線透過窓の紫外線透過率が正常かどうかを判定することは、前記第１の光測定器の前記光照射パラメータの測定値が基準値よりも低い場合に、前記紫外線透過窓の紫外線透過率が異常であると判定する、請求項１１に記載の基板処理方法。 Determining whether the ultraviolet transmittance of the ultraviolet transmitting window is normal is determined when the measured value of the light irradiation parameter of the first light measuring device is lower than the reference value. The substrate processing method according to claim 11, wherein is determined to be abnormal.
  13. 　前記光照射パラメータは照度であり、前記第１の光測定器は照度計である、請求項１１または請求項１２に記載の基板処理方法。 The substrate processing method according to claim 11 or 12, wherein the light irradiation parameter is illuminance, and the first optical measuring instrument is an illuminance meter.
  14. 　前記紫外線透過窓の紫外線透過率が正常かどうかを判定することは、前記第１の光測定器の測定結果と、前記紫外線光源の光照射パラメータを直接測定する第２の光学測定器の測定結果とに基づいて前記紫外線透過窓の紫外線透過率が正常かどうかを判定する、請求項１１に記載の基板処理方法。 Determining whether the ultraviolet transmittance of the ultraviolet transmitting window is normal is the measurement result of the first optical measuring instrument and the measurement result of the second optical measuring instrument that directly measures the light irradiation parameter of the ultraviolet light source. The substrate processing method according to claim 11, wherein it is determined whether or not the ultraviolet transmittance of the ultraviolet transmitting window is normal based on the above.
  15. 　前記紫外線透過窓の紫外線透過率が正常かどうかを判定することは、前記第１の光測定器の光照射パラメータの測定値と、前記第２の光測定器の光照射パラメータの測定値を比較し、これらの差が特定の値以下の場合に前記紫外線透過窓の透過率が正常と判定し、前記特定の値より大きい場合に前記紫外線透過窓の透過率が異常と判定する、請求項１４に記載の基板処理方法。 To determine whether the ultraviolet transmittance of the ultraviolet transmitting window is normal, the measured value of the light irradiation parameter of the first light measuring device is compared with the measured value of the light irradiation parameter of the second light measuring device. 14; The substrate processing method described in 1.
  16. 　前記紫外線透過窓の紫外線透過率が正常かどうかを判定することは、前記第１の光測定器の光照射パラメータの測定値と、前記第２の光測定器の光照射パラメータの測定値との関係を示す指標を算出し、その値から前記紫外線透過窓の透過率が正常かどうかを判定する、請求項１４に記載の基板処理方法。 Determining whether or not the ultraviolet transmittance of the ultraviolet transmitting window is normal is determined by the measurement value of the light irradiation parameter of the first light measuring device and the measured value of the light irradiation parameter of the second light measuring device. The substrate processing method according to claim 14, wherein an index indicating the relationship is calculated, and whether or not the transmittance of the ultraviolet light transmitting window is normal is determined from the value.
  17. 　前記指標は、前記第２の光測定器で測定された光照射パラメータ（Ｉ２）に対する前記第１の光測定器で測定された光照射パラメータ（Ｉ１）の比（Ｉ１／Ｉ２）である、請求項１６に記載の基板処理方法。 The index is a ratio (I1 / I2) of the light irradiation parameter (I1) measured by the first optical measuring instrument to the light irradiation parameter (I2) measured by the second optical measuring instrument. Item 16. The substrate processing method according to Item 16.
  18. 　前記光照射パラメータは照度であり、前記第１の光測定器および前記第２の光測定器は照度計である、請求項１４から請求項１７のいずれか一項に記載の基板処理方法。 The substrate processing method according to any one of claims 14 to 17, wherein the light irradiation parameter is illuminance, and the first light measuring device and the second light measuring device are illuminance meters.
  19. 　前記酸素ラジカル処理を行うことの後に、リモートプラズマにより前記処理容器に窒素ラジカルを供給して前記基板を窒化することをさらに有する、請求項１１から請求項１８のいずれか一項に記載の基板処理方法。 The substrate treatment according to any one of claims 11 to 18, further comprising supplying nitrogen radicals to the treatment container by remote plasma to nitrid the substrate after performing the oxygen radical treatment. Method.
  20. 　基板を処理する処理容器内に紫外線を照射する紫外線照射ユニットであって、
    　前記処理容器の外部から前記処理容器内に紫外線を放射する紫外線光源と、
    　前記紫外線光源から放射された紫外線を前記処理容器内に透過する紫外線透過窓と、
    　前記紫外線透過窓を透過し前記処理容器内に照射される紫外線の光照射パラメータを測定する第１の光測定器と、
    を有する、紫外線照射ユニット。     An ultraviolet irradiation unit that irradiates ultraviolet rays into the processing container that processes the substrate.
    An ultraviolet light source that radiates ultraviolet rays from the outside of the processing container into the processing container,
    An ultraviolet transmission window that transmits ultraviolet rays radiated from the ultraviolet light source into the processing container, and
    A first optical measuring instrument that measures the light irradiation parameters of ultraviolet rays that pass through the ultraviolet transmission window and are irradiated into the processing container.
    Has an ultraviolet irradiation unit.
PCT/JP2021/036998 2020-12-22 2021-10-06 Substrate treating device, substrate treating method, and ultraviolet ray irradiation unit WO2022137725A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272595A (en) * 2007-07-19 2009-11-19 Asm Japan Kk Method for managing uv irradiation in order to carry out curing of semiconductor substrate
JP2010186815A (en) * 2009-02-10 2010-08-26 Nec Corp Device and method of ultraviolet irradiation
JP2014003150A (en) * 2012-06-18 2014-01-09 Tokyo Electron Ltd Device for measuring transmittance of ultraviolet transmitting window and method for controlling ultraviolet irradiation amount

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272595A (en) * 2007-07-19 2009-11-19 Asm Japan Kk Method for managing uv irradiation in order to carry out curing of semiconductor substrate
JP2010186815A (en) * 2009-02-10 2010-08-26 Nec Corp Device and method of ultraviolet irradiation
JP2014003150A (en) * 2012-06-18 2014-01-09 Tokyo Electron Ltd Device for measuring transmittance of ultraviolet transmitting window and method for controlling ultraviolet irradiation amount

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