WO2022135213A1 - Puce de capteur mems, microphone et dispositif électronique - Google Patents

Puce de capteur mems, microphone et dispositif électronique Download PDF

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Publication number
WO2022135213A1
WO2022135213A1 PCT/CN2021/137497 CN2021137497W WO2022135213A1 WO 2022135213 A1 WO2022135213 A1 WO 2022135213A1 CN 2021137497 W CN2021137497 W CN 2021137497W WO 2022135213 A1 WO2022135213 A1 WO 2022135213A1
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WIPO (PCT)
Prior art keywords
layer
annular
annular support
support layer
diaphragm
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PCT/CN2021/137497
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English (en)
Chinese (zh)
Inventor
刘松
邱冠勋
周宗燐
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歌尔微电子股份有限公司
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Publication of WO2022135213A1 publication Critical patent/WO2022135213A1/fr

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones

Definitions

  • the present application relates to the field of sensor technology, and in particular, to a MEMS sensor chip, a microphone and an electronic device.
  • MEMS Micro-Electro-Mechanical System
  • MEMS Micro-Electro-Mechanical System
  • the MEMS microphone mainly includes a package shell and a MEMS sensor chip arranged in the package shell, so as to convert the sound signal into an electrical signal through the MEMS sensor chip.
  • a MEMS sensor chip usually includes a substrate and a sensing component disposed on the substrate.
  • the sensing component includes a diaphragm and a back plate opposite to each other, and a flat capacitive structure composed of the diaphragm and the back plate.
  • the diaphragm vibrates under the action of sound waves, which causes the distance between the diaphragm and the back plate to change, so that the capacitance of the plate capacitor changes, thereby converting the sound wave signal into an electrical signal.
  • a sacrificial layer (mostly an oxide layer) is set between the sensing component and the substrate, as well as between the diaphragm and the back plate of the sensing component, and then the sacrificial layer is passed through HF acid or BOE.
  • a corrosive solution such as a solution is used to etch away part of the sacrificial layer to release the micro-motor structure; the remaining sacrificial layer is usually used as a support layer of the micro-motor structure to support the induction components.
  • the sacrificial layer is easily etched and transitioned, resulting in lower reliability of the support layer, thereby lowering the reliability of the MEMS sensor chip and the microphone.
  • the main purpose of this application is to propose a MEMS sensor chip, which aims to solve the technical problem of low reliability of the support layer of the micro-motor structure in the existing MEMS sensor chip preparation process.
  • a MEMS sensor chip comprising:
  • the induction assembly includes a first annular support layer, a second annular support layer, a third annular support layer, a first diaphragm, a second diaphragm and a back plate with a through hole, the first annular support layer is arranged on the substrate, and the first annular support layer, the first diaphragm, the second annular support layer, the back plate, the third annular support layer and the first annular support layer
  • the two diaphragms are sequentially stacked in a direction away from the substrate;
  • annular protective layer is arranged on the peripheral side of the induction component, and the annular protective layer at least covers the first annular support layer and/or the second annular support layer and/or the first annular support layer Three annular support layers.
  • the annular protective layer sequentially covers the first annular support layer, the first diaphragm, the second annular support layer, the back plate, the third annular support layer, and the second diaphragm.
  • the back plate includes a first conductive layer, an insulating layer and a second conductive layer, the first conductive layer is provided on a side of the second annular support layer away from the substrate, The insulating layer is arranged on the side of the first conductive layer away from the substrate, the second conductive layer is arranged on the side of the insulating layer away from the substrate, and the third annular support layer is provided on the side of the second conductive layer facing away from the substrate; or,
  • the back plate is a single-layer film structure.
  • the annular protective layer is integrally connected with the second diaphragm.
  • the annular protective layer is integrally connected with the first diaphragm.
  • the first diaphragm has a first annular isolation hole, and the first annular support layer and the second annular support layer are integrally connected through the first annular isolation hole, or the induction
  • the assembly also includes an isolation ring arranged in the first annular isolation hole; or,
  • the second diaphragm has a second annular isolation hole
  • the induction assembly further includes an isolation member, the isolation member is at least partially arranged in the second annular isolation hole.
  • the periphery of the first diaphragm is spaced from the annular protective layer, and the first annular support layer and the second annular support layer pass through the periphery of the first diaphragm and the annular protective layer.
  • the spaces between the annular protective layers are integrally connected.
  • the periphery of the back plate and the annular protective layer are spaced apart, and the second annular support layer and the third annular support layer pass through the gap between the periphery of the back plate and the annular protective layer. The space between them is connected as a whole.
  • the annular protective layer is an insulating protective layer.
  • the sensing component further includes a connecting column, the connecting column is movably disposed in the through hole, and two ends of the connecting column are respectively connected to the first diaphragm and the second diaphragm. Two diaphragms.
  • connection post is an electrical connector
  • the connecting column is an insulating column.
  • the first diaphragm is provided with a first pressure relief hole, and/or the second diaphragm is provided with a second pressure relief hole.
  • the present application also proposes a microphone, comprising:
  • the MEMS sensor chip is provided in the package casing.
  • the present application also proposes an electronic device including the above microphone.
  • annular protective layer covering at least the first annular supporting layer and/or the second annular supporting layer and/or the third annular supporting layer is provided on the outside of the induction assembly, so that the annular protective layer can protect the first annular supporting layer and/or the outer periphery of the second annular support layer and/or the third annular support layer is protected to prevent it from being corroded during the manufacturing process, so that the first annular support layer and/or the second annular support layer can be guaranteed or provided and/or the reliability of the third annular support layer, so that the performance and reliability of the microphone can be improved, and the yield of the MEMS sensor chip and the microphone can be improved.
  • the induction assembly include a back plate, and a first vibrating film and a second vibrating film distributed on both sides of the back plate
  • the first vibrating film and the back plate can form a first parallel plate capacitor
  • the second diaphragm and the back plate form a second parallel plate capacitor
  • the first parallel plate capacitor and the second parallel plate capacitor can be differentially controlled, so as to not only improve the sensitivity of the MEMS sensor chip, but also improve the MEMS sensor
  • the signal-to-noise ratio of the chip can improve the performance of the MEMS sensor chip.
  • FIG. 1 is a schematic structural diagram of a first embodiment of a MEMS sensor chip of the present application
  • FIG. 2 is a schematic structural diagram of the MEMS sensor chip in FIG. 1 before being etched;
  • FIG. 3 is a schematic structural diagram of a second embodiment of the MEMS sensor chip of the present application.
  • FIG. 4 is a schematic structural diagram of a third embodiment of the MEMS sensor chip of the present application.
  • FIG. 5 is a schematic structural diagram of a fourth embodiment of the MEMS sensor chip of the present application.
  • FIG. 6 is a schematic structural diagram of a fifth embodiment of the MEMS sensor chip of the present application.
  • FIG. 7 is a schematic structural diagram of a sixth embodiment of the MEMS sensor chip of the present application.
  • FIG. 8 is a schematic structural diagram of an eighth embodiment of the MEMS sensor chip of the present application.
  • FIG. 9 is a schematic structural diagram of a ninth embodiment of the MEMS sensor chip of the present application.
  • FIG. 10 is a schematic structural diagram of a tenth embodiment of the MEMS sensor chip of the present application.
  • label name label name 100 MEMS sensor chip 244 through hole 10 substrate 25 third annular support layer 11 cavity 26 second diaphragm twenty one first annular support layer 27 connecting column twenty two first diaphragm 28 spacer twenty three second annular support layer 30 ring protective layer twenty four back plate 31
  • This application proposes a MEMS sensor chip, which is mainly used for microphones.
  • the MEMS sensor chip 100 includes a substrate 10 , a sensing component and a ring-shaped protective layer 30 .
  • the substrate 10 has a cavity 11 , and the cavity 11 penetrates the substrate 10 .
  • the sensing component includes a first annular support layer 21 , a second annular support layer 23 , a third annular support layer 25 , a first diaphragm 22 , and a second diaphragm 26 and a back plate 24 having a through hole 244,
  • the first annular support layer 21 is arranged on the substrate 10
  • the first diaphragm 22 is arranged on the side of the first annular support layer 21 away from the substrate 10
  • the second annular support layer 23 is disposed on the side of the first diaphragm 22 away from the substrate 10
  • the back plate 24 is disposed on the side of the second annular support layer 23 away from the substrate 10
  • the first The three annular support layers 25 are disposed on the side of the back plate 24 away from the substrate 10
  • the second diaphragm 26 is disposed on the side of the third annular support layer 25 away from the substrate 10 .
  • the first annular support layer 21 is provided on the substrate 10 , the first annular support layer 21 , the first diaphragm 22 , and the second annular support
  • the layer 23 , the back electrode plate 24 , the third annular support layer 25 and the second diaphragm 26 are sequentially stacked in a direction away from the substrate 10 .
  • the first diaphragm 22 is provided with a first pressure relief hole, and/or the second diaphragm 26 is provided with a second pressure relief hole.
  • the annular hole of the first annular support layer 21 is arranged corresponding to the cavity 11 , and the annular hole of the first annular support layer 21 is communicated with the cavity 11 ; the annular hole of the second annular support layer 23 is connected to the cavity 11 .
  • the annular holes of an annular support layer 21 are arranged correspondingly, the annular holes of the third annular support layer 25 are arranged corresponding to the annular holes of the second annular support layer 23 , and the through holes 244 on the back plate 24 are connected to the third annular support layer.
  • the first pressure relief hole on the first diaphragm 22 communicates with the ring hole of the second annular support layer 23 and the ring hole of the first annular support layer 21
  • the second pressure relief hole on the second diaphragm 26 communicates with the annular hole of the third annular support layer 25 and the external environment.
  • the through hole 244 may be provided in one or a plurality of through holes (ie, greater than or equal to two). In this embodiment, a plurality of the through holes 244 are arranged on the back plate 24 at intervals.
  • first pressure relief hole and/or the second pressure relief hole may be provided in one or a plurality of holes (ie, greater than or equal to two).
  • a plurality of the first pressure relief holes are arranged on the first diaphragm 22 at intervals, and/or a plurality of second pressure relief holes are arranged on the second diaphragm 26 at intervals.
  • the diameter or equivalent diameter of the first pressure relief hole and/or the second pressure relief hole may be smaller than the diameter or equivalent diameter of the through hole 244, and the first pressure relief hole and/or the second pressure relief hole may be The number of the two pressure relief holes is less than the number of the through holes 244 .
  • the through holes 244 can be used as sound holes, pressure relief holes and corrosion holes.
  • the through hole 244 is used as an etching hole for the etching liquid to pass through, so as to facilitate the removal of the second sacrificial layer b and/or the third sacrificial layer c; when assembling the microphone or assembling the microphone
  • the through hole 244 can be used as a pressure relief hole; when working, the through hole 244 can be used as a sound hole for transmitting sound to the first diaphragm 22 and/or the second diaphragm Diaphragm 26 .
  • first pressure relief hole and/or the second pressure relief hole can also be used as etching holes, so as to allow the etching liquid to pass through when the MEMS sensor chip 100 is prepared.
  • etching holes can also be used as etching holes, so as to allow the etching liquid to pass through when the MEMS sensor chip 100 is prepared.
  • other dedicated etching channels may also be provided to allow the etching liquid to pass through during the preparation of the MEMS sensor chip 100 .
  • the annular protective layer 30 is provided on the peripheral side of the induction component, and the annular protective layer 30 at least covers the first annular support layer 21 and/or the second annular support layer 23 and/or the third annular support layer Support layer 25 . In this way, it is convenient to protect the first annular support layer 21 and/or the second annular support layer 23 and/or the third annular support layer 25 to ensure/improve the reliability thereof.
  • the first diaphragm 22 and the back plate 24 can form a first parallel plate capacitor
  • the second diaphragm 26 and the back plate 24 can form a second parallel plate capacitor
  • the first parallel plate The capacitor is differentially controlled with the second parallel plate capacitor to improve the performance of the MEMS sensor chip 100 .
  • the first vibrating membrane 22 and the second vibrating membrane 26 vibrate under the action of sound waves, resulting in the gap between the first vibrating membrane 22 and the back plate 24 and the second vibrating membrane 26 and the back plate 24 .
  • the distances of the two are changed, so that the capacitances of the first parallel plate capacitor and the second parallel plate capacitor are changed, so that the acoustic wave signal is converted into two electrical signals.
  • the present application also provides a preparation process of the MEMS sensor chip 100, which is as follows:
  • a first sacrificial layer a, a first vibrating film 22, a second sacrificial layer b, a back plate 24, a third sacrificial layer c and a second vibrating film 26 are sequentially formed (deposited) on the substrate 10, wherein the The back plate 24 is formed with a through hole 244 ; the first diaphragm 22 is formed with a first pressure relief hole, and/or the second diaphragm 26 is formed with a second pressure relief hole.
  • the first sacrificial layer a, the first vibrating film 22, the second sacrificial layer b, the back plate 24, the third sacrificial layer c and the peripheral side (deposition) of the second vibrating film 26 are formed
  • the annular protective layer 30 is formed to cover at least the first sacrificial layer a and/or the second sacrificial layer b and/or the third sacrificial layer c.
  • annular protective layer 30 at least covers the first sacrificial layer a and/or the second sacrificial layer b and/or The third sacrificial layer c, so that the outer periphery of the first sacrificial layer a may not be removed/etched, and/or, the outer periphery of the second sacrificial layer b may not be removed/etched, and/or, may So that the outer periphery of the third sacrificial layer c will not be removed/etched, so that the annular protective layer 30 can achieve the outer periphery of the first sacrificial layer a and/or the second sacrificial layer b and/or the third sacrificial layer c.
  • the annular protective layer 30 can protect the outer periphery of the first annular support layer 21 and/or the second annular support layer 23 and/or the third annular support layer 25 from being corroded during the preparation process, As a result, the reliability of the first annular support layer 21 and/or the second annular support layer 23 and/or the third annular support layer 25 can be guaranteed or provided, so that the performance and reliability of the microphone can be improved, and the MEMS sensor chip 100 and the microphone can be improved. yield rate.
  • the induction assembly include the back plate 24 and the first diaphragm 22 and the second diaphragm 26 distributed on both sides of the back plate 24, the first diaphragm 22 and the back plate 24 can be formed.
  • the first parallel plate capacitor, the second diaphragm 26 and the back plate 24 form a second parallel plate capacitor, and by differentially controlling the first parallel plate capacitor and the second parallel plate capacitor, not only can the MEMS sensor chip 100 be improved.
  • the sensitivity of the MEMS sensor chip 100 can be improved, and the signal-to-noise ratio of the MEMS sensor chip 100 can be improved, so that the performance of the MEMS sensor chip 100 can be improved.
  • the annular protective layer 30 covers at least the first annular support layer 21 , the second annular support layer 23 and the third annular support layer 25 to ensure the first annular support layer 21 and the second annular support layer Reliability of layer 23 and third annular support layer 25.
  • the sensing component further includes a connecting column 27 , the connecting column 27 is movably disposed in the through hole 244 , and both ends of the connecting column 27
  • the first diaphragm 22 and the second diaphragm 26 are respectively connected, so that the first diaphragm 22 and the second diaphragm 26 can be mechanically coupled.
  • the peripheral surface of the connecting column 27 at the through hole 244 should be spaced or slidably connected to the inner wall surface of the through hole 244 , so that the connecting column 27 can be movably disposed in the through hole 244 .
  • the connecting post 27 can be an electrical connector to electrically connect the first diaphragm 22 and the second diaphragm 26, so that the first diaphragm 22 and the second diaphragm 26 can also be electrically coupled It can also be that the connecting column 27 is an insulating column, so that the first vibrating film 22 and the second vibrating film 26 are only mechanically coupled; specifically, according to the connection between the annular protective layer 30 and the first vibrating film 22 and the second vibrating film 26 relationship is set.
  • the outer annular surface of the annular protective layer 30 may be a stepped surface.
  • the outer peripheries of the third annular support layer 25 , the second diaphragm 26 and the back plate 24 can be flush, and the second annular support layer 23 radially (ie, in the direction away from the centerline of the substrate 10 ) protruding from the back plate 24 , the first diaphragm 22 protrudes radially (ie, in the direction away from the centerline of the substrate 10 ) from the second annular support layer 23, the first annular support layer 21 protrudes from the first diaphragm 22 radially (ie, in the direction away from the centerline of the substrate 10), so that the shape of the peripheral side of the induction component is a stepped structure, and the The shape of the annular protective layer 30 is suitable for the shape of the peripheral side of the induction component, so that the thickness of the
  • the third annular support layer 25 can also be made to protrude from the second diaphragm 26 radially (ie, in the direction away from the centerline of the substrate 10 ), and the back pole
  • the plate 24 protrudes radially (ie, in a direction away from the centerline of the substrate 10 ) beyond the third annular support layer 25 , which protrudes radially (ie, in a direction away from the centerline of the substrate 10 ) Protruding from the back plate 24
  • the first diaphragm 22 protrudes from the second annular support layer 23 radially (ie, in the direction away from the centerline of the substrate 10 ), and the first annular support layer 21 radially (that is, in the direction away from the centerline of the substrate 10) protruding from the first diaphragm 22, so that the shape of the peripheral side of the induction component is a stepped structure, and the shape of the annular protective layer 30 is the same as that of the peripheral
  • the outer ring surface of the annular protective layer 30 may be a flat surface.
  • the outer peripheries of the first annular supporting layer 21 , the first diaphragm 22 , the second annular supporting layer 23 , the third annular supporting layer 25 and the second diaphragm 26 can be flush, so as to The outer annular surface of the annular protective layer 30 is made a flat surface.
  • the annular protective layer 30 can cover the first annular support layer 21 , the first diaphragm 22 , the second annular support layer 23 , the first annular support layer 21 , the first annular diaphragm 22 , the second annular support layer 23 , The back plate 24 , the third annular support layer 25 and the second diaphragm 26 .
  • one end of the annular protective layer 30 is hermetically connected to the upper surface of the substrate 10 , and the other end covers the second diaphragm 26 .
  • first vibrating membrane 22 and the second vibrating membrane 26 can be selected as single-layer membrane structures, and the materials thereof are all conductive materials, such as polysilicon.
  • the material of the annular protective layer 30 may be the same as the material of the second diaphragm 26 (for example, both can be selected as polysilicon, etc.), or may be different from the material of the second back plate 24 (for example, annular
  • the protective layer 30 is made of insulating materials, such as silicon nitride, and the vibrating film is made of polysilicon); but it should be different from the materials of the first sacrificial layer a, the second sacrificial layer b and the third sacrificial layer c (such as the first sacrificial layer
  • the layer a and/or the second sacrificial layer b and/or the second sacrificial layer b may be selected from silicon oxide, etc.) to prevent the ring-shaped protective layer 30 from being corroded during the preparation process, which will be described with examples below.
  • the back plate 24 can either be a single-layer conductive layer structure, such as a single-layer film structure, or a three-layer film structure.
  • the first conductive layer 241 can be provided on the side of the second annular support layer 23 away from the substrate 10, and the insulating layer 242 is provided on the side of the first conductive layer 241 away from the substrate 10, the second conductive layer 243 is provided on the side of the insulating layer 242 away from the substrate 10, and the third annular support layer 25 is provided on the second The side of the conductive layer 243 away from the substrate 10; and the first conductive layer 241 and the first diaphragm 22 can form a first parallel plate capacitor, and the second conductive layer 243 and the second diaphragm 26 can form a second parallel plate capacitor.
  • the annular protective layer 30 may be integrally connected with the second diaphragm 26, or the annular protective layer 30 may be connected with the second diaphragm 26 separately (in this case, the annular protective layer 30 is an insulating protective layer to prevent the first vibrating film 22, the back plate 24 and the second vibrating film 26 from being short-circuited through the annular protective layer 30), so as to realize the differential control of the first parallel plate capacitor and the second parallel plate capacitor respectively, Examples are given below.
  • the periphery of the back plate 24 can be spaced from (the inner surface of) the annular protective layer 30 to prevent the back plate 24 from passing through the annular protective layer. 30 is short-circuited with the first diaphragm 22 and/or the second diaphragm 26 .
  • the annular protective layer 30 is integrally connected with the second diaphragm 26 . In this way, when the second diaphragm 26 is formed (deposited), the annular protective layer 30 can be formed (deposited) together, thereby simplifying the fabrication process of the MEMS sensor chip 100 .
  • the annular protective layer 30 is integrally connected with the second diaphragm 26 .
  • the materials of the annular protective layer 30 and the second diaphragm 26 are both conductive materials, such as polysilicon.
  • the annular protective layer 30 is integrally connected with the first diaphragm 22 .
  • the material of the first vibrating film 22 is a conductive material, such as polysilicon.
  • the periphery of the back plate 24 is spaced from (the inner surface of) the annular protective layer 30 to prevent the back plate 24 from passing through the annular protective layer 30 and the first The diaphragm 22 and/or the second diaphragm 26 are short-circuited.
  • the second annular support layer 23 and the third annular support layer 25 are connected as a whole through the interval between the periphery of the back plate 24 and the annular protective layer 30 . In this way, the reliability of the second annular support layer 23 and the third annular support layer 25 can be improved.
  • the back plate 24 includes a first conductive layer 241 , an insulating layer 242 and a second conductive layer 243 that are stacked in sequence, and the through holes 244 pass through the first conductive layer in sequence.
  • an insulating layer 242 and a second conductive layer 243, and the first conductive layer 241 is provided on the side of the second annular support layer 23 away from the substrate 10, and the insulating layer 242 is provided on the side of the first conductive layer 241
  • the second conductive layer 243 is provided on the side of the insulating layer 242 facing away from the substrate 10
  • the third annular support layer 25 is provided on the side of the second conductive layer 243 facing away from the substrate 10 . side.
  • the insulating layer 242 is disposed between the first conductive layer 241 and the second conductive layer 243, the short circuit between the first conductive layer 241 and the second conductive layer 243 can be avoided, so that the first conductive layer 241 and the first diaphragm can be connected.
  • 22 forms a first parallel plate capacitor
  • the second conductive layer 243 and the second diaphragm 26 form a second parallel plate capacitor.
  • the sensing assembly further includes a connecting column 27 , the connecting column 27 is movably disposed in the through hole 244 , and two of the connecting column 27 The ends are respectively connected to the first diaphragm 22 and the second diaphragm 26 .
  • the connecting column 27 is an electrical connecting member to electrically connect the first vibrating film 22 and the second vibrating film 26 .
  • the first annular supporting layer 21 , the first diaphragm 22 , the second annular supporting layer 23 , the third annular supporting layer 25 and the The outer periphery of the dither diaphragm 26 is flush, so that the outer ring surface of the annular protective layer 30 is a flat surface.
  • connection Post 27 is an insulating member.
  • the difference between this embodiment and the first embodiment of the MEMS sensor chip 100 of the present application is that the first parallel plate capacitor and the first parallel plate capacitor are specifically formed. Two parallel plate capacitors work differently.
  • one end of the annular protective layer 30 is integrally connected with the second diaphragm 26, and the other end of the annular protective layer 30 is integrally connected with the first diaphragm 22;
  • the The back electrode plate 24 is a single-layer film structure, and the periphery of the back electrode plate 24 is spaced from (the inner surface of the annular protective layer 30 ), and the second annular support layer 23 and the third annular support layer 25 pass through the back electrode
  • the peripheral edge of the plate 24 is integrally connected with the space between the annular protective layer 30 .
  • the second diaphragm 26 has a second annular isolation hole
  • the sensing assembly further includes an isolation member 28 , and the isolation member 28 is at least partially disposed in the second annular isolation hole; and when the When the sensing assembly includes the connecting column 27, the connecting column 27 is an insulating column.
  • the spacer 28 is made of insulating material, such as silicon nitride.
  • the short circuit between the first diaphragm 22 and the second diaphragm 26 through the annular protective layer 30 can be avoided, so that the back plate 24 and the first diaphragm 22 can form a first parallel plate capacitor , the back plate 24 and the second diaphragm 26 form a second parallel plate capacitor.
  • the cross-sectional shape of the spacer 28 is T-shaped.
  • the spacer 28 is an annular structure.
  • the back The electrode plate 24 has a three-layer film structure, that is, the back electrode plate 24 includes a first conductive layer 241, an insulating layer 242 and a second conductive layer 243 that are stacked in sequence, and the through holes 244 run through the first conductive layer 241 and the insulating layer 242 in sequence. and the second conductive layer 243, so that the first conductive layer 241 and the first diaphragm 22 can form a first parallel plate capacitor, and the second conductive layer 243 and the second diaphragm 26 can form a second parallel plate capacitor.
  • the difference between this embodiment and the first embodiment of the MEMS sensor chip 100 of the present application is that the first parallel plate capacitor and the first parallel plate capacitor are specifically formed. Two parallel plate capacitors work differently.
  • the annular protective layer 30 is integrally connected with the second diaphragm 26
  • the back plate 24 is a single-layer film structure
  • the periphery of the back plate 24 is connected to the annular
  • the protective layer 30 (the inner surface) is arranged at intervals, and the second annular supporting layer 23 and the third annular supporting layer 25 are connected as a whole through the interval between the periphery of the back plate 24 and the annular protective layer 30; and when the sensing assembly includes the connecting column 27, the connecting column 27 is an insulating column.
  • the spacer 28 is made of insulating material, such as silicon nitride.
  • the periphery of the back plate 24 is spaced from (the inner surface of) the annular protective layer 30, the first diaphragm 22 and the second diaphragm 26 can be prevented from being short-circuited through the annular protective layer 30, so that the back plate 24 can be prevented from being short-circuited.
  • 24 and the first diaphragm 22 form a first parallel plate capacitor
  • the back plate 24 and the second diaphragm 26 form a second parallel plate capacitor.
  • the back The electrode plate 24 has a three-layer film structure, that is, the back electrode plate 24 includes a first conductive layer 241, an insulating layer 242 and a second conductive layer 243 that are stacked in sequence, and the through holes 244 run through the first conductive layer 241 and the insulating layer 242 in sequence. and the second conductive layer 243, so that the first conductive layer 241 and the first diaphragm 22 can form a first parallel plate capacitor, and the second conductive layer 243 and the second diaphragm 26 can form a second parallel plate capacitor.
  • the difference between this embodiment and the first embodiment of the MEMS sensor chip 100 of the present application mainly lies in the specific manner of forming the first parallel plate capacitor and the second parallel plate capacitor different.
  • one end of the annular protective layer 30 is integrally connected with the second diaphragm 26 , and the other end of the annular protective layer 30 is integrally connected with the first diaphragm 22 ;
  • the second annular support layer 23 and the third annular support layer 25 are connected as a whole through the interval between the periphery of the back plate 24 and the annular protection layer 30; and all
  • the first diaphragm 22 has a first annular isolation hole, and the first annular support layer 21 and the second annular support layer 23 are integrally connected through the first annular isolation hole.
  • the isolation ring in the isolation hole is an insulating ring.
  • the first diaphragm 22 and the second diaphragm 26 can be prevented from being short-circuited through the annular protective layer 30, and by making the periphery of the back plate 24 and the annular protective layer 30 (the inner surface)
  • the back plate 24 and the first diaphragm 22 can form a first parallel plate capacitor
  • the back plate 24 and the second diaphragm 26 can form a second parallel plate capacitor.
  • the back plate 24 can be a single-layer film structure or a three-layer film structure; and when the sensing component includes a connecting column 27 , the connecting column 27 is an insulating column.
  • the spacer 28 is made of insulating material, such as silicon nitride.
  • the annular protective layer 30 can be an insulating protective layer to prevent the first diaphragm 22 , the back plate 24 and the second diaphragm 26 from passing through the annular protective layer 30 short circuit.
  • the diaphragm is an insulating protective layer, one end of the insulating protective layer is connected to the side surface of the substrate 10 , and the other end is connected to the second Diaphragm 26.
  • the back plate 24 has a three-layer film structure, that is, the back plate 24 includes a first conductive layer 241 , an insulating layer 242 and a second conductive layer 243 that are stacked in sequence.
  • the through hole 244 penetrates the first conductive layer 241, the insulating layer 242 and the second conductive layer 243 in sequence, and the first conductive layer 241 is provided on the side of the second annular support layer 23 away from the substrate 10, the insulating layer 241
  • the layer 242 is provided on the side of the first conductive layer 241 away from the substrate 10
  • the second conductive layer 243 is provided on the side of the insulating layer 242 away from the substrate 10
  • the third annular support layer 25 is provided on the side of the insulating layer 242 away from the substrate 10.
  • the side of the second conductive layer 243 facing away from the substrate 10 .
  • the insulating layer 242 is disposed between the first conductive layer 241 and the second conductive layer 243, the short circuit between the first conductive layer 241 and the second conductive layer 243 can be avoided, so that the first conductive layer 241 and the first diaphragm can be connected.
  • 22 forms a first parallel plate capacitor
  • the second conductive layer 243 and the second diaphragm 26 form a second parallel plate capacitor.
  • one end of the annular protective layer 30 is provided with a limiting flange 31 , and the limiting flange 31 is provided on a side of the second diaphragm 26 away from the substrate 10 . side.
  • the sensing component further includes a connecting column 27 , the connecting column 27 is movably disposed in the through hole 244 , and two of the connecting column 27 The ends are respectively connected to the first diaphragm 22 and the second diaphragm 26 to achieve mechanical coupling.
  • the connecting column 27 is an electrical connecting piece to electrically connect the first vibrating film 22 and the second vibrating film 26 to realize electrical coupling. Specifically, both ends of the connecting column 27 are integrally connected to the first diaphragm 22 and the second diaphragm 26 respectively.
  • the outer annular surface of the annular protective layer 30 is a stepped surface.
  • the third annular support layer 25 protrudes from the second diaphragm 26 radially (ie, in the direction away from the centerline of the substrate 10 ), and the back plate 24 radially (ie, in the direction away from the centerline of the substrate 10 ) direction) protrudes from the third annular support layer 25, the second annular support layer 23 protrudes from the back plate 24 radially (ie in the direction away from the centerline of the substrate 10), the first vibration
  • the membrane 22 protrudes radially (ie, in a direction away from the centerline of the substrate 10 ) beyond the second annular support layer 23 , which is radially (ie, in a direction away from the centerline of the substrate 10 ) Protruding from the first diaphragm 22 .
  • the shape of the peripheral side of the induction component is a stepped structure, and the shape of the annular protective layer 30 is suitable for the shape of the peripheral side of the induction component, so that the thickness of the annular protective layer 30 is relatively uniform to ensure the protection effect.
  • connection Post 27 is an insulating member.
  • the difference between this embodiment and the ninth embodiment of the MEMS sensor chip 100 of the present application is that, in this embodiment, the back The electrode plate 24 is a single-layer film structure.
  • annular protective layer 30 can also be set to other structural forms, so as to achieve "at least covering the first annular support layer 21 and/or the second annular support layer 23 and/or the third annular support layer” Layer 25".
  • the annular protection layer 30 may include a first protection ring layer and a second protection ring layer, wherein the first protection ring layer covers the first annular support layer 21 and the second protection ring layer covers the second annular support layer 23 and the third annular support layer 25; and so on.
  • the present application also proposes a microphone, comprising:
  • the MEMS sensor chip is provided in the package casing.
  • the specific structure of the MEMS sensor chip refers to the above-mentioned embodiments. Since the microphone of the present application adopts all the technical solutions of all the above-mentioned embodiments, it at least has all the functions brought by the technical solutions of the above-mentioned embodiments, and will not be repeated here. .
  • the present application also proposes an electronic device, which includes a main control board and a microphone, and the microphone is electrically connected to the main control board.
  • the specific structure of the microphone refers to the above-mentioned embodiments. Since the electronic device of the present application adopts all the technical solutions of the above-mentioned embodiments, it at least has all the functions brought by the technical solutions of the above-mentioned embodiments, and will not be repeated here.
  • the electronic device can be selected from electronic devices such as a mobile phone, a tablet computer, a camera, a hearing aid, a smart toy or a listening device.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Abstract

La présente invention concerne une puce de capteur MEMS, un microphone et un dispositif électronique. La puce de capteur MEMS comprend un substrat, un ensemble de détection et une couche de protection annulaire ; l'ensemble de détection comprend une première couche de support annulaire, une deuxième couche de support annulaire, une troisième couche de support annulaire, une première membrane vibrante, une deuxième membrane vibrante et une plaque d'électrode arrière ; la première couche de support annulaire est prévue sur le substrat, et la première couche de support annulaire, la première membrane vibrante, la deuxième couche de support annulaire, la plaque d'électrode arrière, la troisième couche de support annulaire et la deuxième membrane vibrante sont empilées séquentiellement ; et la couche de protection annulaire est prévue sur la périphérie de l'ensemble de détection, et la couche de protection annulaire couvre au moins la première couche de support annulaire et/ou la deuxième couche de support annulaire et/ou la troisième couche de support annulaire.
PCT/CN2021/137497 2020-12-25 2021-12-13 Puce de capteur mems, microphone et dispositif électronique WO2022135213A1 (fr)

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CN202023199780.7U CN213694144U (zh) 2020-12-25 2020-12-25 Mems传感器芯片、麦克风和电子设备
CN202023199780.7 2020-12-25

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Publication number Priority date Publication date Assignee Title
CN213694144U (zh) * 2020-12-25 2021-07-13 歌尔微电子有限公司 Mems传感器芯片、麦克风和电子设备

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CN203279172U (zh) * 2013-05-03 2013-11-06 歌尔声学股份有限公司 Mems麦克风
CN103402160A (zh) * 2013-07-10 2013-11-20 瑞声声学科技(深圳)有限公司 Mems麦克风及其工作控制方法
CN103702268A (zh) * 2013-12-31 2014-04-02 瑞声声学科技(深圳)有限公司 Mems麦克风
CN107835477A (zh) * 2017-11-24 2018-03-23 歌尔股份有限公司 一种mems麦克风
CN108584863A (zh) * 2018-04-20 2018-09-28 杭州士兰集成电路有限公司 Mems器件及其制造方法
CN109905833A (zh) * 2018-12-31 2019-06-18 瑞声科技(新加坡)有限公司 Mems麦克风制造方法
US20200186940A1 (en) * 2017-08-14 2020-06-11 Memsensing Microsystems (Suzhou, China) Co. Ltd. Differential condenser microphone with double vibrating membranes
CN213694144U (zh) * 2020-12-25 2021-07-13 歌尔微电子有限公司 Mems传感器芯片、麦克风和电子设备

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CN203279172U (zh) * 2013-05-03 2013-11-06 歌尔声学股份有限公司 Mems麦克风
CN103402160A (zh) * 2013-07-10 2013-11-20 瑞声声学科技(深圳)有限公司 Mems麦克风及其工作控制方法
CN103702268A (zh) * 2013-12-31 2014-04-02 瑞声声学科技(深圳)有限公司 Mems麦克风
US20200186940A1 (en) * 2017-08-14 2020-06-11 Memsensing Microsystems (Suzhou, China) Co. Ltd. Differential condenser microphone with double vibrating membranes
CN107835477A (zh) * 2017-11-24 2018-03-23 歌尔股份有限公司 一种mems麦克风
CN108584863A (zh) * 2018-04-20 2018-09-28 杭州士兰集成电路有限公司 Mems器件及其制造方法
CN109905833A (zh) * 2018-12-31 2019-06-18 瑞声科技(新加坡)有限公司 Mems麦克风制造方法
CN213694144U (zh) * 2020-12-25 2021-07-13 歌尔微电子有限公司 Mems传感器芯片、麦克风和电子设备

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