WO2022134543A1 - X-ray flat panel detector and photosensitive unit array therefor - Google Patents
X-ray flat panel detector and photosensitive unit array therefor Download PDFInfo
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- WO2022134543A1 WO2022134543A1 PCT/CN2021/105257 CN2021105257W WO2022134543A1 WO 2022134543 A1 WO2022134543 A1 WO 2022134543A1 CN 2021105257 W CN2021105257 W CN 2021105257W WO 2022134543 A1 WO2022134543 A1 WO 2022134543A1
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- 230000035945 sensitivity Effects 0.000 claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 230000005525 hole transport Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000009659 non-destructive testing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001959 radiotherapy Methods 0.000 description 2
- 210000001519 tissue Anatomy 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000038 chest Anatomy 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 210000004872 soft tissue Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
Definitions
- the invention relates to the fields of medical radiation imaging, industrial non-destructive testing, security inspection and security, in particular to an X-ray flat panel detector and a photosensitive unit array thereof.
- X-ray flat-panel detectors are imaging equipment sensitive to X-rays. They can be used in medical imaging (breast and chest examinations, radiotherapy, etc.), industrial non-destructive testing, and security inspection and security.
- the pixel substrate can be composed of millions or even tens of millions of pixel unit circuits, each pixel unit is usually composed of thin-film transistors (Thin-Film Transistors, TFT) and photodiode (Photodiode, PD) and other devices.
- TFT Thin-Film Transistors
- PD photodiode
- the flat panel detector is usually composed of several parts such as a structural member 10, a scintillator 11, a sensor 12, a circuit 13, etc. (the direct type detector does not require additional scintillators), wherein the structural member 11 is mainly used for The external protection of the flat panel detector and the support of internal components, etc.; the scintillator 11 is mainly used to convert X-rays into light that the sensor can respond to; the sensor 12 is mainly used to convert the light signal into a charge signal; the circuit 13 is mainly used to collect the charge Signal, and convert the charge signal into a voltage signal, and then convert the analog voltage signal into a digital signal, and then form a digital image, and transmit the image information to the host computer through wired or wireless data communication interfaces.
- the structural member 11 is mainly used for The external protection of the flat panel detector and the support of internal components, etc.
- the scintillator 11 is mainly used to convert X-rays into light that the sensor can respond to
- the sensor 12 is mainly used to
- Figure 2 is the circuit structure diagram of the current mainstream passive phase-element structure flat panel detector, including: Gate driver IC1, used to scan the TFT array line by line; electrical signal readout chip 2, used to scan the line by line to open the TFT Then, the charge signals stored in the photodiode capacitors in each column are read in parallel; the flat panel detector photosensitive unit array 3, which is an array of photosensitive elements, converts the optical signals into electrical signals.
- Gate driver IC1 used to scan the TFT array line by line
- electrical signal readout chip 2 used to scan the line by line to open the TFT Then, the charge signals stored in the photodiode capacitors in each column are read in parallel; the flat panel detector photosensitive unit array 3, which is an array of photosensitive elements, converts the optical signals into electrical signals.
- the flat panel detector photosensitive cell array 3 specifically includes: a photodiode and its capacitor 31, the photodiode is in a reverse biased state, converts the photon signal into a charge signal, and stores it in the capacitor; TFT switch 32, when the TFT is turned off, the photosensitive The capacitance of the diode performs current integration; when the TFT is turned on, the electrical signal readout chip begins to read the amount of charge stored in the photodiode capacitor; the gate line 33 is used to turn on and off the TFT line by line; the drain line 34 is used for parallel reading The function of the charge signal stored in the pixel units of each column; the VCOM line 35 acts to apply a reverse bias voltage to the photodiode.
- the same detector needs to have the characteristics of high sensitivity and wide dynamic range at the same time, and can obtain images of different sensitivities at the same time through one exposure, but in the design of the photosensitive cell array of the existing flat panel detector, all The sensitivity design value of the photosensitive unit is the same, so the flat panel detector cannot have a wide dynamic range while having high sensitivity.
- the purpose of the present invention is to provide an X-ray flat panel detector and a photosensitive cell array thereof, which are used to solve the problem that the flat panel detector in the prior art has high sensitivity and cannot have both wide dynamic range, etc.
- the present invention provides a photosensitive cell array of an X-ray flat panel detector, the photosensitive cell array comprising:
- M ⁇ N photosensitive units M ⁇ 2, N ⁇ 1, all the photosensitive units include at least two different sensitivities.
- the number of the photosensitive units with different sensitivities in the photosensitive unit array is the same.
- the photosensitive unit array has four different sensitivities, and all the photosensitive units are arranged in an array in sequence with the four photosensitive units having the four different sensitivities as a repeating structure. .
- each of the photosensitive units includes a photosensitive diode, a common metal electrode is provided on the light-receiving surface of the photosensitive diode, and the area of the common metal electrode on the photosensitive diodes of the photosensitive units with different sensitivities is different.
- the material of the common metal electrode is aluminum, aluminum alloy, molybdenum or copper.
- the light-receiving surfaces of the photodiodes of the photosensitive units with different sensitivities are different in size.
- each of the photosensitive units includes a photosensitive diode, and the light-receiving surfaces of the photosensitive diodes of the photosensitive units with different sensitivities are different in size.
- each of the photosensitive units includes a photodiode
- the photodiode includes an N-type heavily doped electron transport layer, an active layer and a P-type heavily doped hole transport layer stacked in sequence, and the The electron transport layer, the active layer and the hole transport layer constitute a PIN type photodiode, wherein the thickness of the hole transport layer of the photodiodes of the photosensitive cells with different sensitivities is different.
- a common metal electrode is provided on the light-receiving surface of the photosensitive diode; the areas of the common metal electrode on the photosensitive diodes of the photosensitive units with different sensitivities are different and/or the The light-receiving surfaces of the photodiodes of the photosensitive units are different in size.
- the present invention further provides an X-ray flat panel detector, the flat panel detector comprising the photosensitive unit array of any one of the above-mentioned X-ray flat panel detectors.
- the photosensitive unit array includes: M ⁇ N photosensitive units, M ⁇ 2, N ⁇ 1, all the photosensitive units include at least two different sensitivity.
- the same flat panel detector can have the characteristics of high sensitivity and wide dynamic range at the same time; in addition, images with different sensitivities can be obtained at the same time through one exposure; finally, images based on different sensitivities can be processed by subsequent algorithms to obtain More image details.
- FIG. 1 is a schematic diagram showing the structure of an existing X-ray flat panel detector.
- FIG. 2 shows a circuit structure diagram of a flat panel detector with a conventional passive phase element structure.
- FIG. 3 is a circuit structure diagram of the X-ray flat panel detector of the present invention.
- FIG. 4 is a graph showing the sensitivity curves of the four photosensitive units with different sensitivities in FIG. 3 .
- FIGS. 5 to 7 are schematic diagrams showing the structure of each photosensitive unit in the photosensitive unit array of the X-ray flat panel detector of the present invention, wherein the areas of the common metal electrodes on the photodiodes in FIGS. 5 to 7 increase sequentially.
- FIGS. 8 to 10 are schematic diagrams showing the structure of the photodiode of each photosensitive unit in the photosensitive unit array of the X-ray flat panel detector of the present invention, wherein the thickness of the hole transport layer of the photodiode in FIGS. 8 to 10 increases sequentially. big.
- this embodiment provides a photosensitive unit array of an X-ray flat panel detector, and the photosensitive unit array 22 includes:
- all the photosensitive units 23 include at least two different sensitivities.
- photosensitive units with at least two different sensitivities in the photosensitive unit array 22 when the dose is low, an image composed of the photosensitive units 23 with higher sensitivity can be selected to obtain higher sensitivity; When it is high, an image composed of the photosensitive unit 23 with lower sensitivity can be selected to obtain a wider dynamic range. Therefore, the same flat panel detector can have the characteristics of high sensitivity and wide dynamic range at the same time; in addition, images with different sensitivities can be obtained at the same time through one exposure; finally, images based on different sensitivities can be processed by subsequent algorithms to obtain More image details.
- the number of different sensitivities in the photosensitive unit array 22 is not limited, that is, it may include 2, 3, 4, 6, 8, or even more;
- the number of the photosensitive units 23 with different sensitivities in the photosensitive unit array 22 is the same, so that the flat panel detector formed based on the photosensitive unit array has high sensitivity and wide dynamic range, and has a stronger general suitability.
- the photosensitive cell array 22 has four photosensitive cells 23 with different sensitivities, namely P1, P2, P3, and P4, corresponding to the four different sensitivities.
- the sensitivity of the photosensitive unit 23 is S1, S2, S3, S4, wherein S1>S2>S3>S4, the arrangement of the photosensitive unit array 22
- the cells 23 are arranged in an array of repeating blocks 27 in sequence.
- the image composed of the photosensitive cells 23 with the same sensitivity can be selected according to actual needs. For example, when the dose is low, the image composed of the photosensitive cell P1 can be selected to obtain higher sensitivity; when the dose is high, the photosensitive cell can be selected.
- the image composed of the unit P4 can obtain a wider dynamic range; you can also observe the four images composed of the photosensitive units P1, P2, P3, and P4 at the same time for comparison; you can also calculate the four images through algorithms to obtain more much information.
- each photosensitive unit of the photosensitive unit array of the flat panel detector has a photosensitive diode, and the wiring used to provide a common potential to the photosensitive diode, that is, the common electrode, is generally made of metal materials. The material is opaque and will block a part of the incident light signal. Therefore, the common electrode is generally chosen to be in the shape of a slender trace to reduce the shading image of the diode. Based on this knowledge, as shown in FIG.
- the area of the common metal electrode 25 on the light-receiving surface 26 of the photodiodes with different target sensitivities is respectively increased or decreased, so as to make different
- the area of the common metal electrode 25 on the light-receiving surface 26 of the photodiode of the photosensitive unit 23 with different sensitivity is different, so as to reduce or increase the light-receiving surface 26 of the photodiode with different target sensitivities.
- the area of the common metal electrode 25 is increased, so that the sensitivity of the photodiode 24 is decreased in turn.
- the common metal electrode 25 of this solution can be realized by using a photolithography process to form a corresponding pattern on the mask plate when forming the common metal electrode, and will not affect the production process in terms of yield and productivity.
- the shape of the common metal electrode 25 is not limited, and can be a regular shape or an irregular shape. Based on the ease of implementation of the process, the shape of the common metal electrode 25 is selected to be a regular rectangle ( as shown in Figure 5 to Figure 7).
- the material of the common metal electrode 25 can be selected from any existing metal material suitable for electrode preparation, such as aluminum, aluminum alloy, molybdenum or copper.
- the second solution different from the improvement of the first solution, this solution improves the size of the light-receiving surface 26 of the photodiode in each photosensitive unit 23, specifically: changing the photodiode in each photosensitive unit 23
- the size of the photodiode 24 in the photosensitive unit 23 with different sensitivities is different, and the size of the photodiode 24 is different, the size of the light-receiving surface 26 of the photodiode is different.
- the sensitivity of the photodiode 24 is high, and the sensitivity of the photodiode 24 with a small size is low.
- each photosensitive unit of the photosensitive unit array of the flat panel detector has a photosensitive diode, as shown in FIG. P-type heavily doped electron transport layer 241 , active layer 242 and P-type heavily doped hole transport layer 243 , the hole transport layer 243 is not completely transparent and will block incident light signals.
- the thicknesses of the hole transport layers 243 of the photodiodes 24 with different target sensitivities are respectively increased or thin, so as to The thickness of the hole transport layer 243 of the photodiode 24 of the photosensitive unit 23 with different sensitivities is different.
- the thickness of the hole transport layer 243 of the photodiode 24 is increased so that the sensitivity of the photodiode 24 is sequentially decreased.
- the method for preparing the hole transport layers 243 with different thicknesses in this solution can be realized by performing one or more film formations and then etching them respectively when forming the hole transport layers. Using this scheme, the plane design of the entire photosensitive element array is completely consistent, and its trace resistance, coupling capacitance and noise performance are highly consistent.
- the thickness of the hole transport layer 243 is generally several tens of to thousands changes, such as or
- two of the above three schemes for realizing photosensitive units with different sensitivities can also be combined or three schemes can be combined to obtain photosensitive units with different sensitivities.
- the specific combination method and the combined parameter settings are designed according to the actual needs of the specific flat panel detector, and are not limited here.
- this embodiment further provides an X-ray flat panel detector
- the flat panel detector includes the photosensitive cell array 22 proposed in this embodiment, and the flat panel detector also includes some existing conventional structures , for example: a driving circuit, a readout circuit, a switching transistor TFT, a gate line, a source line, a drain line, etc., which will not be repeated here.
- the present invention provides an X-ray flat panel detector and a photosensitive unit array thereof, the photosensitive unit array includes: M ⁇ N photosensitive units, M ⁇ 2, N ⁇ 1, all the photosensitive units include at least Two different sensitivities.
- the photosensitive unit array includes: M ⁇ N photosensitive units, M ⁇ 2, N ⁇ 1, all the photosensitive units include at least Two different sensitivities.
- the same flat panel detector can have the characteristics of high sensitivity and wide dynamic range at the same time; in addition, images with different sensitivities can be obtained at the same time through one exposure; finally, images based on different sensitivities can be processed by subsequent algorithms to obtain More image details. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.
Abstract
An X-ray flat panel detector and a photosensitive unit array (22) therefor. The photosensitive unit array (22) comprises: M×N photosensitive units (23), wherein M≥2, N≥1, and all photosensitive units (23) comprise at least two different sensitivities. The photosensitive units (23) with at least two different sensitivities are arranged in the photosensitive unit array (22), such that when a dose is relatively low, an image composed of the photosensitive units (23) with a relatively high sensitivity can be selected, so as to obtain a relatively high sensitivity; and when the dose is relatively high, an image composed of the photosensitive units (23) with a relatively low sensitivity can be selected, so as to obtain a relatively wide dynamic range. Therefore, the same flat panel detector can have the characteristics of a high sensitivity and a wide dynamic range at the same time. In addition, images with different sensitivities can also be obtained simultaneously by means of one exposure; and finally, on the basis of images with different sensitivities, more image details can also be obtained by means of subsequent algorithm processing.
Description
本发明涉及医疗辐射成像、工业无损探伤、安检安防等领域，特别是涉及一种X射线平板探测器及其光敏单元阵列。The invention relates to the fields of medical radiation imaging, industrial non-destructive testing, security inspection and security, in particular to an X-ray flat panel detector and a photosensitive unit array thereof.
X射线平板探测器(后续简称平板探测器)是对X射线敏感的一种成像设备，可应用于医疗成像(乳腺和胸部检查、放疗等)、工业无损探伤以及安检安防等领域，尺寸可达数十厘米，像素基板可由数百万乃至数千万个像素单元电路所组成，每个像素单元通常由薄膜晶体管(Thin-Film Transistors，TFT)和光敏二极管(Photodiode，PD)等器件所构成。X-ray flat-panel detectors (hereinafter referred to as flat-panel detectors) are imaging equipment sensitive to X-rays. They can be used in medical imaging (breast and chest examinations, radiotherapy, etc.), industrial non-destructive testing, and security inspection and security. Tens of centimeters, the pixel substrate can be composed of millions or even tens of millions of pixel unit circuits, each pixel unit is usually composed of thin-film transistors (Thin-Film Transistors, TFT) and photodiode (Photodiode, PD) and other devices.
如图1所示，平板探测器通常由结构件10、闪烁体11、传感器12、电路13等几大部分组成(直接型探测器不需要额外的闪烁体)，其中，结构件11主要用于平板探测器外部的保护和内部元件的支撑等；闪烁体11主要用于将X射线转换成传感器可以响应的光；传感器12主要用于将光信号转换成电荷信号；电路13主要用于收集电荷信号，并将电荷信号转换成电压信号，然后将模拟电压信号转换为数字信号，进而组成数字图像，通过有线或无线等数据通讯接口将图像信息传输到上位机。如图2为目前主流的无源相素结构的平板探测器的电路结构图，包括：Gate驱动IC1，用于逐行扫描打开TFT阵列；电信号读出芯片2，用于逐行扫描打开TFT后，并行读取各列光敏二极管电容中存储的电荷信号；平板探测器光敏单元阵列3，其为感光元件阵列，将光信号转换成电信号。平板探测器光敏单元阵列3具体包括：光敏二极管及其电容31，光敏二极管处于反向偏置状态，将光子信号转化成电荷信号，并存储于其电容中；TFT开关32，TFT关闭时，光敏二极管的电容进行电流积分；TFT打开时，电 信号读出芯片开始读取光敏二极管电容中储存的电荷量；Gate线33，起逐行打开和关闭TFT的作用；Drain线34，起并行读取各列像素单元中存储的电荷信号的作用；VCOM线35，起给光敏二极管加反向偏置电压的作用。As shown in FIG. 1, the flat panel detector is usually composed of several parts such as a structural member 10, a scintillator 11, a sensor 12, a circuit 13, etc. (the direct type detector does not require additional scintillators), wherein the structural member 11 is mainly used for The external protection of the flat panel detector and the support of internal components, etc.; the scintillator 11 is mainly used to convert X-rays into light that the sensor can respond to; the sensor 12 is mainly used to convert the light signal into a charge signal; the circuit 13 is mainly used to collect the charge Signal, and convert the charge signal into a voltage signal, and then convert the analog voltage signal into a digital signal, and then form a digital image, and transmit the image information to the host computer through wired or wireless data communication interfaces. Figure 2 is the circuit structure diagram of the current mainstream passive phase-element structure flat panel detector, including: Gate driver IC1, used to scan the TFT array line by line; electrical signal readout chip 2, used to scan the line by line to open the TFT Then, the charge signals stored in the photodiode capacitors in each column are read in parallel; the flat panel detector photosensitive unit array 3, which is an array of photosensitive elements, converts the optical signals into electrical signals. The flat panel detector photosensitive cell array 3 specifically includes: a photodiode and its capacitor 31, the photodiode is in a reverse biased state, converts the photon signal into a charge signal, and stores it in the capacitor; TFT switch 32, when the TFT is turned off, the photosensitive The capacitance of the diode performs current integration; when the TFT is turned on, the electrical signal readout chip begins to read the amount of charge stored in the photodiode capacitor; the gate line 33 is used to turn on and off the TFT line by line; the drain line 34 is used for parallel reading The function of the charge signal stored in the pixel units of each column; the VCOM line 35 acts to apply a reverse bias voltage to the photodiode.
在临床应用中，结合人们的生理特征，不同组织对射线的吸收程度是不同的，如骨骼对射线的吸收较多，软组织对射线的吸收较少。使用市场上现有探测器，在一些应用中，一次拍摄不能呈现所有细节，经常会出现部分组织饱和的情况，因此需要使用不同剂量多次拍摄，增加了累计拍摄剂量；类似的情况，在工业应用中也存在，虽然不用考虑剂量大小问题，多次拍摄也会增加检测时间；而在放疗应用中，一般剂量比较大，希望探测器灵敏度较低，进而获得更大的动态范围。为了解决此些问题，就需要同一台探测器同时拥有高灵敏度和宽动态范围的特性，并且能通过一次曝光同时获得不同灵敏度的图像，但现有平板探测器的光敏单元阵列的设计中，所有光敏单元的灵敏度设计值是一样的，因此平板探测器在拥有高灵敏度的同时，不可能同时拥有宽动态范围。In clinical applications, combined with people's physiological characteristics, different tissues absorb radiation differently. For example, bone absorbs more radiation, while soft tissue absorbs less radiation. Using the existing detectors on the market, in some applications, one shot cannot show all the details, and some tissues are often saturated, so multiple shots with different doses are required, which increases the cumulative shot dose; similar situations, in industry It also exists in applications. Although the dose size is not considered, multiple shots will also increase the detection time; in radiotherapy applications, the dose is generally relatively large, and it is hoped that the detector sensitivity is low, thereby obtaining a larger dynamic range. In order to solve these problems, the same detector needs to have the characteristics of high sensitivity and wide dynamic range at the same time, and can obtain images of different sensitivities at the same time through one exposure, but in the design of the photosensitive cell array of the existing flat panel detector, all The sensitivity design value of the photosensitive unit is the same, so the flat panel detector cannot have a wide dynamic range while having high sensitivity.
发明内容SUMMARY OF THE INVENTION
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种X射线平板探测器及其光敏单元阵列，用于解决现有技术中平板探测器在拥有高灵敏度的同时，不可能同时拥有宽动态范围等的问题。In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an X-ray flat panel detector and a photosensitive cell array thereof, which are used to solve the problem that the flat panel detector in the prior art has high sensitivity and cannot have both wide dynamic range, etc.
为实现上述目的及其他相关目的，本发明提供一种X射线平板探测器的光敏单元阵列，所述光敏单元阵列包括：In order to achieve the above object and other related objects, the present invention provides a photosensitive cell array of an X-ray flat panel detector, the photosensitive cell array comprising:
M×N个光敏单元，M≥2，N≥1，所有所述光敏单元包括至少两种不同灵敏度。M×N photosensitive units, M≧2, N≧1, all the photosensitive units include at least two different sensitivities.
可选地，所述光敏单元阵列中不同灵敏度的所述光敏单元的数量相同。Optionally, the number of the photosensitive units with different sensitivities in the photosensitive unit array is the same.
可选地，M≥2，N≥2，所述光敏单元阵列中具有四种不同灵敏度，所有所述光敏单元以具有该四种不同灵敏度的四个所述光敏单元为重复结构依次阵列排布。Optionally, M≥2, N≥2, the photosensitive unit array has four different sensitivities, and all the photosensitive units are arranged in an array in sequence with the four photosensitive units having the four different sensitivities as a repeating structure. .
可选地，每个所述光敏单元包括光敏二极管，所述光敏二极管的受光面上设置有公共金属电极，具有不同灵敏度的所述光敏单元的所述光敏二极管上的 所述公共金属电极的面积不同。Optionally, each of the photosensitive units includes a photosensitive diode, a common metal electrode is provided on the light-receiving surface of the photosensitive diode, and the area of the common metal electrode on the photosensitive diodes of the photosensitive units with different sensitivities is different.
可选地，所述公共金属电极的材料为铝、铝合金、钼或铜。Optionally, the material of the common metal electrode is aluminum, aluminum alloy, molybdenum or copper.
可选地，具有不同灵敏度的所述光敏单元的所述光敏二极管的受光面的大小不同。Optionally, the light-receiving surfaces of the photodiodes of the photosensitive units with different sensitivities are different in size.
可选地，每个所述光敏单元包括光敏二极管，具有不同灵敏度的所述光敏单元的所述光敏二极管的受光面的大小不同。Optionally, each of the photosensitive units includes a photosensitive diode, and the light-receiving surfaces of the photosensitive diodes of the photosensitive units with different sensitivities are different in size.
可选地，每个所述光敏单元包括光敏二极管，所述光敏二极管包括依次层叠的N型重掺杂的电子传输层、有源层及P型重掺杂的空穴传输层，且所述电子传输层、所述有源层及所述空穴传输层构成PIN型光敏二极管，其中，具有不同灵敏度的所述光敏单元的所述光敏二极管的所述空穴传输层的厚度不同。Optionally, each of the photosensitive units includes a photodiode, and the photodiode includes an N-type heavily doped electron transport layer, an active layer and a P-type heavily doped hole transport layer stacked in sequence, and the The electron transport layer, the active layer and the hole transport layer constitute a PIN type photodiode, wherein the thickness of the hole transport layer of the photodiodes of the photosensitive cells with different sensitivities is different.
可选地，所述光敏二极管的受光面上设置有公共金属电极；具有不同灵敏度的所述光敏单元的所述光敏二极管上的所述公共金属电极的面积不同和/或具有不同灵敏度的所述光敏单元的所述光敏二极管的受光面的大小不同。Optionally, a common metal electrode is provided on the light-receiving surface of the photosensitive diode; the areas of the common metal electrode on the photosensitive diodes of the photosensitive units with different sensitivities are different and/or the The light-receiving surfaces of the photodiodes of the photosensitive units are different in size.
本发明还提供一种X射线平板探测器，所述平板探测器包括上述任一一项所述的X射线平板探测器的光敏单元阵列。The present invention further provides an X-ray flat panel detector, the flat panel detector comprising the photosensitive unit array of any one of the above-mentioned X-ray flat panel detectors.
如上所述，本发明的X射线平板探测器及其光敏单元阵列，所述光敏单元阵列包括：M×N个光敏单元，M≥2，N≥1，所有所述光敏单元包括至少两种不同灵敏度。通过在所述光敏单元阵列中设置具有至少两种不同灵敏度的光敏单元，当剂量较低时，可选用灵敏度较高的所述光敏单元组成的图像，获得较高的灵敏度；当剂量较高时，可选用灵敏度较低的所述光敏单元组成的图像，获得较宽的动态范围。从而使同一台平板探测器可同时拥有高灵敏度和宽动态范围的特性；另外，还可通过一次曝光同时获得不同灵敏度的图像；最后，基于不同灵敏度的图像，还可通过后续算法处理，进而获得更多的图像细节。As described above, the X-ray flat panel detector and its photosensitive unit array of the present invention, the photosensitive unit array includes: M×N photosensitive units, M≥2, N≥1, all the photosensitive units include at least two different sensitivity. By arranging photosensitive units with at least two different sensitivities in the photosensitive unit array, when the dose is low, an image composed of the photosensitive units with higher sensitivity can be selected to obtain higher sensitivity; when the dose is high , an image composed of the photosensitive unit with lower sensitivity can be selected to obtain a wider dynamic range. Therefore, the same flat panel detector can have the characteristics of high sensitivity and wide dynamic range at the same time; in addition, images with different sensitivities can be obtained at the same time through one exposure; finally, images based on different sensitivities can be processed by subsequent algorithms to obtain More image details.
图1显示为现有X射线平板探测器的结构示意简图。FIG. 1 is a schematic diagram showing the structure of an existing X-ray flat panel detector.
图2显示为现有无源相素结构的平板探测器的电路结构图。FIG. 2 shows a circuit structure diagram of a flat panel detector with a conventional passive phase element structure.
图3显示为本发明的X射线平板探测器的电路结构图。FIG. 3 is a circuit structure diagram of the X-ray flat panel detector of the present invention.
图4显示为图3中四种不同灵敏度的光敏单元的灵敏度曲线图。FIG. 4 is a graph showing the sensitivity curves of the four photosensitive units with different sensitivities in FIG. 3 .
图5至图7显示为本发明的X射线平板探测器的光敏单元阵列中每个光敏单元的结构示意图，其中，图5至图7中光敏二极管上的公共金属电极的面积依次增大。5 to 7 are schematic diagrams showing the structure of each photosensitive unit in the photosensitive unit array of the X-ray flat panel detector of the present invention, wherein the areas of the common metal electrodes on the photodiodes in FIGS. 5 to 7 increase sequentially.
图8至图10显示为本发明的X射线平板探测器的光敏单元阵列中每个光敏单元的光敏二极管的结构示意图，其中，图8至图10中光敏二极管的空穴传输层的厚度依次增大。8 to 10 are schematic diagrams showing the structure of the photodiode of each photosensitive unit in the photosensitive unit array of the X-ray flat panel detector of the present invention, wherein the thickness of the hole transport layer of the photodiode in FIGS. 8 to 10 increases sequentially. big.
元件标号说明Component label description
10 结构件10 Structural parts
11 闪烁体11 scintillator
12 传感器12 Sensors
13 电路13 Circuits
1 Gate驱动IC1 Gate driver IC
2 电信号读出芯片2 Electrical signal readout chip
3 平板探测器光敏单元阵列3 Flat panel detector photosensitive cell array
31 光敏二极管及其电容31 Photodiodes and their capacitors
32 TFT开关32 TFT switch
33 Gate线33 Gate line
34 Drain线34 Drain line
35 V
COM线
35 V COM line
20 Gate驱动IC20 Gate driver IC
21 电信号读出芯片21 Electric signal readout chip
22 光敏单元阵列22 Photosensitive cell array
23 光敏单元23 Photosensitive unit
24 光敏二极管24 Photodiode
241 电子传输层241 electron transport layer
242 有源层242 Active layer
243 空穴传输层243 Hole transport layer
25 公共金属电极25 Common metal electrode
26 光敏二极管的受光面26 The light-receiving surface of the photodiode
27 重复块27 repeat blocks
28 薄膜晶体管28 Thin Film Transistors
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
请参阅图1至图10。需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。See Figures 1 through 10. It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the diagrams only show the components related to the present invention rather than the number, shape and the number of components in the actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.
如图3所示，本实施例提供一种X射线平板探测器的光敏单元阵列，所述光敏单元阵列22包括：As shown in FIG. 3 , this embodiment provides a photosensitive unit array of an X-ray flat panel detector, and the photosensitive unit array 22 includes:
M×N个光敏单元23，M≥2，N≥1，所有所述光敏单元23包括至少两种不同灵敏度。通过在所述光敏单元阵列22中设置具有至少两种不同灵敏度的光敏单元，当剂量较低时，可选用灵敏度较高的所述光敏单元23组成的图像，获得较高的灵敏度；当剂量较高时，可选用灵敏度较低的所述光敏单元23组成的图像，获得较宽的动态范围。从而使同一台平板探测器可同时拥有高灵敏度和宽动态范围的特性；另外，还可通过一次曝光同时获得不同灵敏度的图像；最后，基于不同灵敏度的图像，还可通过后续算法处理，进而获得更多的图像细节。M×N photosensitive units 23, M≥2, N≥1, all the photosensitive units 23 include at least two different sensitivities. By arranging photosensitive units with at least two different sensitivities in the photosensitive unit array 22, when the dose is low, an image composed of the photosensitive units 23 with higher sensitivity can be selected to obtain higher sensitivity; When it is high, an image composed of the photosensitive unit 23 with lower sensitivity can be selected to obtain a wider dynamic range. Therefore, the same flat panel detector can have the characteristics of high sensitivity and wide dynamic range at the same time; in addition, images with different sensitivities can be obtained at the same time through one exposure; finally, images based on different sensitivities can be processed by subsequent algorithms to obtain More image details.
本实施例中并不限制所述光敏单元阵列22中不同灵敏度的数量，即可以包括2种、3种、4种、6种、8种甚至更多种；也不限制每种灵敏度下所述光敏 单元23的数量；也不限制不同灵敏度的所述光敏单元23在所述光敏单元阵列22中的排布方式，即可以按区域排布、按行排布、按列排布或按重复块排布。以上参数的选择主要是根据具体平板探测器的实际需要进行选择的。In this embodiment, the number of different sensitivities in the photosensitive unit array 22 is not limited, that is, it may include 2, 3, 4, 6, 8, or even more; The number of photosensitive units 23; it does not limit the arrangement of the photosensitive units 23 with different sensitivities in the photosensitive unit array 22, that is, they can be arranged by area, by row, by column or by repeating block. Arrange. The selection of the above parameters is mainly based on the actual needs of the specific flat panel detector.
作为示例，所述光敏单元阵列22中不同灵敏度的所述光敏单元23的数量相同，以使基于该光敏单元阵列形成的平板探测器在拥有高灵敏度和宽动态范围的同时，具有更强的普适性。如图3及图4所示，作为一较佳实施例，所述光敏单元阵列22具有四种不同灵敏度的所述光敏单元23，即P1、P2、P3、P4，对应的该四种不同灵敏度的所述光敏单元23的灵敏度为S1、S2、S3、S4，其中S1＞S2＞S3＞S4，所述光敏单元阵列22的排布方式为以具有该四种不同灵敏度的四个所述光敏单元23为重复块27依次阵列排布。可根据实际需要，选择相同灵敏度的所述光敏单元23组成的图像，例如：当剂量较低时，可选用光敏单元P1组成的图像，获得较高的灵敏度；当剂量较高时，可选用光敏单元P4组成的图像，获得较宽的动态范围；也可同时观察分别由光敏单元P1、P2、P3、P4组成的4种图像进行对比；也可通过算法对该4种图像进行运算，获取更多的信息。As an example, the number of the photosensitive units 23 with different sensitivities in the photosensitive unit array 22 is the same, so that the flat panel detector formed based on the photosensitive unit array has high sensitivity and wide dynamic range, and has a stronger general suitability. As shown in FIG. 3 and FIG. 4 , as a preferred embodiment, the photosensitive cell array 22 has four photosensitive cells 23 with different sensitivities, namely P1, P2, P3, and P4, corresponding to the four different sensitivities. The sensitivity of the photosensitive unit 23 is S1, S2, S3, S4, wherein S1>S2>S3>S4, the arrangement of the photosensitive unit array 22 The cells 23 are arranged in an array of repeating blocks 27 in sequence. The image composed of the photosensitive cells 23 with the same sensitivity can be selected according to actual needs. For example, when the dose is low, the image composed of the photosensitive cell P1 can be selected to obtain higher sensitivity; when the dose is high, the photosensitive cell can be selected. The image composed of the unit P4 can obtain a wider dynamic range; you can also observe the four images composed of the photosensitive units P1, P2, P3, and P4 at the same time for comparison; you can also calculate the four images through algorithms to obtain more much information.
以下示例三种实现具有不同灵敏度的光敏单元的方案。The following examples illustrate three schemes for realizing photosensitive cells with different sensitivities.
第一种方案：周知，平板探测器的光敏单元阵列的每个光敏单元中均具有光敏二极管，而用于向光敏二极管提供公共电位的走线，即公共电极，一般选择金属材料制备，由于金属材料不透光，会阻挡一部分入射光信号，因此公共电极一般选择做成细长的走线形状，以减小对二极管的遮光影像。基于此认知，如图5所示，为了形成具有不同灵敏度的光敏单元，本示例通过分别增大或减小不同目标灵敏度的光敏二极管的受光面26上公共金属电极25的面积，以使不同灵敏度的光敏单元23的光敏二极管的受光面26上公共金属电极25的面积不同，以使不同目标灵敏度的光敏二极管的受光面26减小或增大，如图5至图7所示，依次增大所述公共金属电极25的面积，以使其光敏二极管24的灵敏度依次减小。本方案的公共金属电极25可通过在形成公共金属电极时，采用光刻工艺，在其掩膜版上制作相应的图形即可实现，不会对生产过程造成良率、产能等方面的影响。这里需要说明的是不限制所述公共金属电极25的形状，可 以为规则的形状也可以为不规则的形状，基于工艺的实现简易程度，选择所述公共金属电极25的形状为规则的矩形(如图5至图7所示)。作为示例，所述公共金属电极25的材料可以选择现有任意适于制备电极的金属材料，例如铝、铝合金、钼或铜。The first solution: It is well known that each photosensitive unit of the photosensitive unit array of the flat panel detector has a photosensitive diode, and the wiring used to provide a common potential to the photosensitive diode, that is, the common electrode, is generally made of metal materials. The material is opaque and will block a part of the incident light signal. Therefore, the common electrode is generally chosen to be in the shape of a slender trace to reduce the shading image of the diode. Based on this knowledge, as shown in FIG. 5 , in order to form photosensitive units with different sensitivities, in this example, the area of the common metal electrode 25 on the light-receiving surface 26 of the photodiodes with different target sensitivities is respectively increased or decreased, so as to make different The area of the common metal electrode 25 on the light-receiving surface 26 of the photodiode of the photosensitive unit 23 with different sensitivity is different, so as to reduce or increase the light-receiving surface 26 of the photodiode with different target sensitivities. The area of the common metal electrode 25 is increased, so that the sensitivity of the photodiode 24 is decreased in turn. The common metal electrode 25 of this solution can be realized by using a photolithography process to form a corresponding pattern on the mask plate when forming the common metal electrode, and will not affect the production process in terms of yield and productivity. It should be noted here that the shape of the common metal electrode 25 is not limited, and can be a regular shape or an irregular shape. Based on the ease of implementation of the process, the shape of the common metal electrode 25 is selected to be a regular rectangle ( as shown in Figure 5 to Figure 7). As an example, the material of the common metal electrode 25 can be selected from any existing metal material suitable for electrode preparation, such as aluminum, aluminum alloy, molybdenum or copper.
第二种方案：与第一种方案的改进方式不同，本方案通过对每个光敏单元23中的光敏二极管的受光面26的大小进行改进，具体为：将每个光敏单元23中的光敏二极管24的尺寸进行调整，具有不同灵敏度的所述光敏单元23中的所述光敏二极管24的尺寸不同，所述光敏二极管24的尺寸不同，则光敏二极管的受光面26的大小则不同，尺寸大的所述光敏二极管24的灵敏度高，尺寸小的所述光敏二极管24的灵敏度低。The second solution: different from the improvement of the first solution, this solution improves the size of the light-receiving surface 26 of the photodiode in each photosensitive unit 23, specifically: changing the photodiode in each photosensitive unit 23 The size of the photodiode 24 in the photosensitive unit 23 with different sensitivities is different, and the size of the photodiode 24 is different, the size of the light-receiving surface 26 of the photodiode is different. The sensitivity of the photodiode 24 is high, and the sensitivity of the photodiode 24 with a small size is low.
第三种方案：周知，平板探测器的光敏单元阵列的每个光敏单元中均具有光敏二极管，如图8至图10所示，一般，光敏二极管24为PIN型光敏二极管，包括依次层叠的N型重掺杂的电子传输层241、有源层242及P型重掺杂的空穴传输层243，所述空穴传输层243并非完全透明，会对入射光信号造成阻挡。基于此认知，如图8所示，为了形成具有不同灵敏度的光敏单元，本示例通过分别增厚或减薄不同目标灵敏度的所述光敏二极管24的所述空穴传输层243的厚度，以使具有不同灵敏度的光敏单元23的光敏二极管24的空穴传输层243的厚度不同，空穴传输层243的厚度越厚则光敏单元23的灵敏度越低，如图8至图10所示，依次增厚光敏二极管24的空穴传输层243的厚度，以使其光敏二极管24的灵敏度依次减小。本方案的不同厚度的空穴传输层243的制备方法可通过在形成空穴传输层时，进行一次或多次成膜后，再分别刻蚀的方式实现。采用本方案整个光敏元件阵列的平面设计保持完全一致、其走线电阻、耦合电容与噪声表现高度一致。作为示例，所述空穴传输层243的厚度一般在几十
到几千
之间变化，例如
或
The third solution: it is well known that each photosensitive unit of the photosensitive unit array of the flat panel detector has a photosensitive diode, as shown in FIG. P-type heavily doped electron transport layer 241 , active layer 242 and P-type heavily doped hole transport layer 243 , the hole transport layer 243 is not completely transparent and will block incident light signals. Based on this knowledge, as shown in FIG. 8 , in order to form photosensitive cells with different sensitivities, in this example, the thicknesses of the hole transport layers 243 of the photodiodes 24 with different target sensitivities are respectively increased or thin, so as to The thickness of the hole transport layer 243 of the photodiode 24 of the photosensitive unit 23 with different sensitivities is different. The thicker the thickness of the hole transport layer 243, the lower the sensitivity of the photosensitive unit 23, as shown in FIGS. The thickness of the hole transport layer 243 of the photodiode 24 is increased so that the sensitivity of the photodiode 24 is sequentially decreased. The method for preparing the hole transport layers 243 with different thicknesses in this solution can be realized by performing one or more film formations and then etching them respectively when forming the hole transport layers. Using this scheme, the plane design of the entire photosensitive element array is completely consistent, and its trace resistance, coupling capacitance and noise performance are highly consistent. As an example, the thickness of the hole transport layer 243 is generally several tens of to thousands changes, such as or
作为示例，也可以将上述三种实现具有不同灵敏度的光敏单元的方案中的两种方案结合或将三种方案结合得到具有不同灵敏度的光敏单元。具体的结合方式以及结合后的参数设置根据具体的平板探测器的实际需要进行设计，在此 不作限制。As an example, two of the above three schemes for realizing photosensitive units with different sensitivities can also be combined or three schemes can be combined to obtain photosensitive units with different sensitivities. The specific combination method and the combined parameter settings are designed according to the actual needs of the specific flat panel detector, and are not limited here.
如图3所示，本实施例还提供一种X射线平板探测器，所述平板探测器包括本实施例提出的所述光敏单元阵列22，所述平板探测器还包括一些现有的常规结构，例如：驱动电路、读出电路、开关晶体管TFT、栅线、源线、漏线等，在此不再赘述。As shown in FIG. 3 , this embodiment further provides an X-ray flat panel detector, the flat panel detector includes the photosensitive cell array 22 proposed in this embodiment, and the flat panel detector also includes some existing conventional structures , for example: a driving circuit, a readout circuit, a switching transistor TFT, a gate line, a source line, a drain line, etc., which will not be repeated here.
综上所述，本发明提供一种X射线平板探测器及其光敏单元阵列，所述光敏单元阵列包括：M×N个光敏单元，M≥2，N≥1，所有所述光敏单元包括至少两种不同灵敏度。通过在所述光敏单元阵列中设置具有至少两种不同灵敏度的光敏单元，当剂量较低时，可选用灵敏度较高的所述光敏单元组成的图像，获得较高的灵敏度；当剂量较高时，可选用灵敏度较低的所述光敏单元组成的图像，获得较宽的动态范围。从而使同一台平板探测器可同时拥有高灵敏度和宽动态范围的特性；另外，还可通过一次曝光同时获得不同灵敏度的图像；最后，基于不同灵敏度的图像，还可通过后续算法处理，进而获得更多的图像细节。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。To sum up, the present invention provides an X-ray flat panel detector and a photosensitive unit array thereof, the photosensitive unit array includes: M×N photosensitive units, M≥2, N≥1, all the photosensitive units include at least Two different sensitivities. By arranging photosensitive units with at least two different sensitivities in the photosensitive unit array, when the dose is low, an image composed of the photosensitive units with higher sensitivity can be selected to obtain higher sensitivity; when the dose is high , an image composed of the photosensitive unit with lower sensitivity can be selected to obtain a wider dynamic range. Therefore, the same flat panel detector can have the characteristics of high sensitivity and wide dynamic range at the same time; in addition, images with different sensitivities can be obtained at the same time through one exposure; finally, images based on different sensitivities can be processed by subsequent algorithms to obtain More image details. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.
Claims (10)
- 一种X射线平板探测器的光敏单元阵列，其特征在于，所述光敏单元阵列包括：A photosensitive cell array of an X-ray flat panel detector, wherein the photosensitive cell array comprises:M×N个光敏单元，M≥2，N≥1，所有所述光敏单元包括至少两种不同灵敏度。M×N photosensitive units, M≧2, N≧1, all the photosensitive units include at least two different sensitivities.
- 根据权利要求1所述的X射线平板探测器的光敏单元阵列，其特征在于：所述光敏单元阵列中不同灵敏度的所述光敏单元的数量相同。The photosensitive unit array of an X-ray flat panel detector according to claim 1, wherein the number of the photosensitive units with different sensitivities in the photosensitive unit array is the same.
- 根据权利要求2所述的X射线平板探测器的光敏单元阵列，其特征在于：M≥2，N≥2，所述光敏单元阵列中具有四种不同灵敏度，所有所述光敏单元以具有该四种不同灵敏度的四个所述光敏单元为重复结构依次阵列排布。The photosensitive cell array of an X-ray flat panel detector according to claim 2, wherein: M≥2, N≥2, the photosensitive cell array has four different sensitivities, and all the photosensitive cells have the four different sensitivities. The four photosensitive units with different sensitivities are sequentially arranged in a repeating structure in an array.
- 根据权利要求1所述的X射线平板探测器的光敏单元阵列，其特征在于：每个所述光敏单元包括光敏二极管，所述光敏二极管的受光面上设置有公共金属电极，具有不同灵敏度的所述光敏单元的所述光敏二极管上的所述公共金属电极的面积不同。The photosensitive cell array of an X-ray flat panel detector according to claim 1, wherein each of the photosensitive cells comprises a photosensitive diode, and a common metal electrode is provided on the light-receiving surface of the photosensitive diode, and all the photosensitive cells have different sensitivities. The areas of the common metal electrodes on the photodiodes of the photosensitive units are different.
- 根据权利要求4所述的X射线平板探测器的光敏单元阵列，其特征在于：所述公共金属电极的材料为铝、铝合金、钼或铜。The photosensitive unit array of an X-ray flat panel detector according to claim 4, wherein the material of the common metal electrode is aluminum, aluminum alloy, molybdenum or copper.
- 根据权利要求4所述的X射线平板探测器的光敏单元阵列，其特征在于：具有不同灵敏度的所述光敏单元的所述光敏二极管的受光面的大小不同。The photosensitive unit array of an X-ray flat panel detector according to claim 4, wherein the photosensitive diodes of the photosensitive units with different sensitivities have different sizes of light-receiving surfaces.
- 根据权利要求1所述的X射线平板探测器的光敏单元阵列，其特征在于：每个所述光敏单元包括光敏二极管，具有不同灵敏度的所述光敏单元的所述光敏二极管的受光面的大小不同。The photosensitive cell array of an X-ray flat panel detector according to claim 1, wherein each of the photosensitive cells comprises a photosensitive diode, and the light-receiving surfaces of the photosensitive diodes of the photosensitive cells with different sensitivities are different in size .
- 根据权利要求1所述的X射线平板探测器的光敏单元阵列，其特征在于：每个所述光敏单元包括光敏二极管，所述光敏二极管包括依次层叠的N型重掺杂的电子传输层、有源层及P型重掺杂的空穴传输层，且所述电子传输层、所述有源层及所述空穴传输层构成PIN型光敏二极管，其中，具有不同灵敏度的所述光敏单元的所述光敏二极管的所述空穴传输层的厚度不同。The photosensitive cell array of an X-ray flat panel detector according to claim 1, wherein each of the photosensitive cells comprises a photosensitive diode, and the photosensitive diode comprises N-type heavily doped electron transport layers stacked in sequence, The source layer and the P-type heavily doped hole transport layer, and the electron transport layer, the active layer and the hole transport layer constitute a PIN photodiode, wherein the photosensitive cells with different sensitivities have different sensitivities. The hole transport layers of the photodiodes vary in thickness.
- 根据权利要求8所述的X射线平板探测器的光敏单元阵列，其特征在于：所述光敏二极管的受光面上设置有公共金属电极；具有不同灵敏度的所述光敏单元的所述光敏二极管上的所述公共金属电极的面积不同和/或具有不同灵敏度的所述光敏单元的所述光敏二极管的受光面的大小不同。The photosensitive cell array of the X-ray flat panel detector according to claim 8, wherein a common metal electrode is provided on the light receiving surface of the photosensitive diode; The areas of the common metal electrodes are different and/or the light-receiving surfaces of the photodiodes of the photosensitive units with different sensitivities are different in size.
- 一种X射线平板探测器，其特征在于，所述平板探测器包括如权利要求1至9中任意一项所述的X射线平板探测器的光敏单元阵列。An X-ray flat panel detector, characterized in that the flat panel detector comprises the photosensitive cell array of the X-ray flat panel detector according to any one of claims 1 to 9.
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