WO2022131090A1 - Optical detection device, optical detection system, electronic equipment, and movable body - Google Patents

Optical detection device, optical detection system, electronic equipment, and movable body Download PDF

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Publication number
WO2022131090A1
WO2022131090A1 PCT/JP2021/045053 JP2021045053W WO2022131090A1 WO 2022131090 A1 WO2022131090 A1 WO 2022131090A1 JP 2021045053 W JP2021045053 W JP 2021045053W WO 2022131090 A1 WO2022131090 A1 WO 2022131090A1
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Prior art keywords
holes
photoelectric conversion
light
semiconductor substrate
unit
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PCT/JP2021/045053
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French (fr)
Japanese (ja)
Inventor
建治 竹尾
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2022131090A1 publication Critical patent/WO2022131090A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Definitions

  • This disclosure relates to photodetectors, photodetectors, electronic devices and mobiles.
  • the photodetector is required to have improved functions. Therefore, it is desired to provide a photodetector, a photodetector system, an electronic device and a mobile body having high functions.
  • the photodetector includes a semiconductor substrate and a plurality of firsts provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
  • the photoelectric conversion unit is provided with a plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate.
  • This optical detection device is further provided between the first main surface of the semiconductor substrate and the light incident surface, and is opposed to an insulating optical filter having a transmission band in the infrared light region and the first through hole.
  • One is provided for each first through hole at the position where the light is formed, and a plurality of second through holes that penetrate the optical filter are provided.
  • This photodetector is further provided with a wiring layer provided in contact with the second main surface of the semiconductor substrate facing the first main surface, and one for each first through hole. It is provided with a plurality of through electrodes that penetrate the through hole and the second through hole and are in contact with the inner surface of the second through hole and the wiring layer.
  • the light detection system includes a light emitting device that emits infrared light and a light detection device.
  • the photodetector has the same components as the photodetector described above.
  • the electronic device includes an optical unit, a signal processing unit, and a photodetector unit.
  • the photodetector has the same components as the photodetector described above.
  • the moving body is a light detection system including a light emitting device that emits a first light included in a visible light region and a second light included in an infrared light region, and a photodetector. It is equipped with.
  • the photodetector has the same components as the photodetector described above.
  • the through electrode penetrating the through hole provided in the optical filter is formed on the inner surface of the through hole provided in the optical filter. I'm in contact. As a result, there is no optical path between the light incident surface and the first photoelectric conversion unit so that the visible light transmitted through the light incident surface does not pass through the optical filter and is incident on the first photoelectric conversion unit. As a result, it is possible to suppress oblique incident of visible light between the adjacent first photoelectric conversion units and prevent color mixing.
  • FIG. 1 It is a schematic block diagram which shows an example of the solid-state image pickup apparatus which concerns on 1st Embodiment of this disclosure. It is sectional drawing which shows an example of the schematic structure of the pixel shown in FIG. It is a circuit diagram which shows an example of the reading circuit of the iTOF sensor part shown in FIG. It is a circuit diagram which shows an example of the reading circuit of the organic photoelectric conversion part shown in FIG.
  • A) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 at Lv1.
  • (B) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 in Lv2.
  • (C) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 in Lv3.
  • (A) is a schematic cross-sectional view showing an example of the schematic configuration of the pixel shown in FIG. 2 in Lv4.
  • (B) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 at Lv5. It is sectional drawing which shows an example of the manufacturing process of the pixel shown in FIG. It is sectional drawing which shows an example of the manufacturing process following FIG. 7A. It is sectional drawing which shows an example of the manufacturing process following FIG. 7B. It is sectional drawing which shows an example of the manufacturing process following FIG. 7C. It is sectional drawing which shows an example of the manufacturing process following FIG.
  • FIG. 7D It is sectional drawing which shows an example of the manufacturing process following FIG. 7E. It is sectional drawing which shows one modification of the schematic structure in Lv4 of the pixel shown in FIG. It is sectional drawing which shows an example of the manufacturing process of the pixel shown in FIG. It is sectional drawing which shows an example of the manufacturing process following FIG. 9A. It is sectional drawing which shows one modification of the schematic structure in Lv4 of the pixel shown in FIG. It is sectional drawing which shows an example of the manufacturing process of the pixel shown in FIG. It is sectional drawing which shows an example of the manufacturing process following FIG. 11A. It is a schematic diagram which shows an example of the whole structure of the light detection system which concerns on the 2nd Embodiment of this disclosure.
  • FIG. It is a schematic diagram which shows an example of the functional block of the photodetection system shown in FIG. It is a schematic diagram which shows the whole structure example of the electronic device. It is a block diagram which shows an example of the schematic structure of the in-vivo information acquisition system. It is a figure which shows an example of the schematic structure of an endoscopic surgery system. It is a block diagram which shows an example of the functional structure of a camera head and a CCU. It is a block diagram which shows an example of the schematic structure of a vehicle control system. It is explanatory drawing which shows an example of the installation position of the vehicle exterior information detection unit and the image pickup unit.
  • First Embodiment An example of a solid-state image pickup device including an organic photoelectric conversion unit that obtains visible light image information and an iTOF sensor unit that receives infrared light and obtains distance information. 2.
  • Modification example of the first embodiment Modification A: Example of providing a slit partition wall
  • Modification example B Example of providing a dummy through electrode 3.
  • Second Embodiment An example of a photodetection system including a light emitting device and a photodetector. 4.
  • Application example to electronic devices 5.
  • FIG. 1 shows an overall configuration example of the solid-state image sensor 1 according to the embodiment of the present disclosure.
  • the solid-state image sensor 1 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor.
  • the solid-state imaging device 1 captures incident light (image light) from a subject via, for example, an optical lens system, converts the incident light imaged on the imaging surface into an electric signal on a pixel-by-pixel basis, and outputs it as a pixel signal. ..
  • the solid-state image sensor 1 includes, for example, a pixel unit 100 as an image pickup area on a semiconductor substrate 11, a vertical drive circuit 111 arranged in a peripheral region of the pixel unit 100, a column signal processing circuit 112, a horizontal drive circuit 113, and an output. It includes a circuit 114, a control circuit 115, and an input / output terminal 116.
  • the solid-state image sensor 1 is a specific example corresponding to the "photodetector" of the present disclosure.
  • the semiconductor substrate 11 is a specific example corresponding to the "semiconductor substrate" of the present disclosure.
  • the pixel unit 100 has, for example, a plurality of pixels P arranged two-dimensionally in a matrix.
  • a pixel row composed of a plurality of pixels P arranged in the horizontal direction (horizontal direction of the paper surface) and a pixel row composed of a plurality of pixels P arranged in the vertical direction (vertical direction of the paper surface) are respectively.
  • one pixel drive line Lread (row selection line and reset control line) is wired to the pixel unit 100 for each pixel row, and one vertical signal line Lsig is wired for each pixel column.
  • the pixel drive line Lread transmits a drive signal for reading a signal from each pixel P.
  • the ends of the plurality of pixel drive lines Lread are connected to a plurality of output terminals corresponding to each pixel row of the vertical drive circuit 111.
  • the vertical drive circuit 111 is composed of a shift register, an address decoder, and the like, and is a pixel drive unit that drives each pixel P in the pixel unit 100, for example, in pixel row units.
  • the signal output from each pixel P of the pixel row selectively scanned by the vertical drive circuit 111 is supplied to the column signal processing circuit 112 through each of the vertical signal lines Lsig.
  • the column signal processing circuit 112 is composed of an amplifier, a horizontal selection switch, etc. provided for each vertical signal line Lsig.
  • the horizontal drive circuit 113 is composed of a shift register, an address decoder, etc., and drives in order while scanning each horizontal selection switch of the column signal processing circuit 112. By the selective scanning by the horizontal drive circuit 113, the signal of each pixel P transmitted through each of the plurality of vertical signal lines Lsig is sequentially output to the horizontal signal line 121, and is sent to the outside of the semiconductor substrate 11 through the horizontal signal line 121. Be transmitted.
  • the output circuit 114 performs signal processing on the signals sequentially supplied from each of the column signal processing circuits 112 via the horizontal signal line 121, and outputs the signals.
  • the output circuit 114 may, for example, perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.
  • the circuit portion including the vertical drive circuit 111, the column signal processing circuit 112, the horizontal drive circuit 113, the horizontal signal line 121, and the output circuit 114 may be formed directly on the semiconductor substrate 11, or may be used as an external control IC. It may be arranged. Further, those circuit portions may be formed on another substrate connected by a cable or the like.
  • the control circuit 115 receives the clock given from the outside of the semiconductor substrate 11, the data for instructing the operation mode, and the like, and outputs the data such as the internal information of the pixel P which is the image pickup element.
  • the control circuit 115 further has a timing generator that generates various timing signals, and the vertical drive circuit 111, the column signal processing circuit 112, the horizontal drive circuit 113, and the like based on the various timing signals generated by the timing generator. It controls the drive of peripheral circuits.
  • the input / output terminal 116 exchanges signals with the outside.
  • FIG. 2 schematically shows an example of a cross-sectional configuration in pixel P1 of one of a plurality of pixels P arranged in a matrix in the pixel unit 100.
  • the pixel P1 has a structure in which, for example, one photoelectric conversion unit 10 and one organic photoelectric conversion unit 20 are laminated in the Z-axis direction, which is the thickness direction, so-called longitudinal spectroscopy. It is a type image sensor.
  • the pixel P1 which is an image pickup element is a specific example corresponding to the "photoelectric conversion element" of the present disclosure.
  • the photoelectric conversion unit 10 is a specific example corresponding to the "first photoelectric conversion unit” of the present disclosure.
  • the organic photoelectric conversion unit 20 is a specific example corresponding to the “second photoelectric conversion unit” of the present disclosure.
  • Pixels P1 include an intermediate layer 40 provided between the photoelectric conversion unit 10 and the organic photoelectric conversion unit 20, and a multilayer wiring layer 30 provided on the opposite side of the organic photoelectric conversion unit 20 when viewed from the photoelectric conversion unit 10.
  • the multilayer wiring layer 30 is a specific example corresponding to the "wiring layer" of the present disclosure.
  • one sealing film 51, one color filter 52, and one flattening film 53 are provided on the light incident side opposite to the photoelectric conversion unit 10 when viewed from the organic photoelectric conversion unit 20, for example.
  • the on-chip lens 54 is laminated along the Z-axis direction in order from the position closest to the organic photoelectric conversion unit 20.
  • the surface of the flattening film 53 (the surface in contact with the on-chip lens 54) is referred to as a light incident surface Sin for convenience. It shall be.
  • the light incident surface Sin is a specific example corresponding to the “light incident surface” of the present disclosure.
  • the sealing film 51 and the flattening film 53 may be provided in common in a plurality of pixels P, respectively.
  • the photoelectric conversion unit 10 is an indirect TOF (hereinafter referred to as iTOF) sensor that acquires a distance image (distance information) by, for example, a light flight time (Time-of-Flight; TOF).
  • the photoelectric conversion unit 10 includes, for example, a semiconductor substrate 11, a photoelectric conversion region 12, a fixed charge layer 13, a pair of gate electrodes 14A and 14B, and charge voltage conversion units (FD) 15A and 15B which are stray diffusion regions. It has an insulating layer 16 and a through electrode 17.
  • the through silicon via 17 is a specific example corresponding to the “through silicon via” of the present disclosure.
  • the semiconductor substrate 11 is, for example, an n-type silicon (Si) substrate including a front surface 11A and a back surface 11B, and has p-wells in a predetermined region.
  • the surface 11A is a specific example corresponding to the "second main surface” of the present disclosure.
  • the back surface 11B is a specific example corresponding to the “first main surface” of the present disclosure.
  • the surface 11A faces the multilayer wiring layer 30.
  • the back surface 11B is a surface facing the intermediate layer 40, and it is preferable that a fine uneven structure is formed. This is because it is effective in confining the infrared light incident on the semiconductor substrate 11 inside the semiconductor substrate 11. A similar fine uneven structure may be formed on the surface 11A.
  • the semiconductor substrate 11 is provided with a through hole H1 at a position corresponding to the through electrode 17.
  • the through electrode 17 is provided in the through hole H1 and is in contact with the multilayer wiring layer 30.
  • the through hole H1 is a specific example corresponding to the "first through hole" of the present disclosure.
  • the insulating layer 16 is provided so as to embed the through hole H1 and cover the back surface 11B.
  • the surface of the insulating layer 16 on the intermediate layer 40 side is a flat surface.
  • the insulating layer 16 is a specific example corresponding to the "insulating layer" of the present disclosure.
  • the insulating layer 16 is a single-layer film made of, for example, one of inorganic insulating materials such as silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiON), or two of them. It is composed of a laminated film composed of seeds or more.
  • Organic insulating materials such as ethyl) 3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS), and octadecyltrichlorosilane (OTS) may be used.
  • the photoelectric conversion region 12 is a photoelectric conversion element composed of, for example, a PIN (Positive Intrinsic Negative) type photodiode (PD), and includes a pn junction formed in a predetermined region of the semiconductor substrate 11.
  • the photoelectric conversion region 12 detects light in a wavelength region including an infrared light region and performs photoelectric conversion.
  • the photoelectric conversion region 12 detects and receives light having a wavelength in the infrared light region among the light from the subject, and generates and stores an electric charge according to the amount of received light by photoelectric conversion. ..
  • the fixed charge layer 13 is provided so as to cover the back surface 11B of the semiconductor substrate 11.
  • the fixed charge layer 13 has, for example, a negative fixed charge in order to suppress the generation of dark current due to the interface state of the back surface 11B, which is the light receiving surface of the semiconductor substrate 11.
  • the electric field induced by the fixed charge layer 13 forms a hole storage layer in the vicinity of the back surface 11B of the semiconductor substrate 11.
  • the hole storage layer suppresses the generation of electrons from the back surface 11B.
  • the fixed charge layer 13 may be further provided so as to cover the inner surface of the through hole H1.
  • the fixed charge layer 13 is preferably formed by using an insulating material.
  • examples of the constituent materials of the fixed charge layer 13 include hafnium oxide (HfO x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), tantalum oxide (TaO x ), and titanium oxide (TiO x ).
  • the pair of gate electrodes 14A and 14B form a part of the transfer transistors (TG) 141A and 141B, respectively, and extend in the Z-axis direction from, for example, the surface 11A to the photoelectric conversion region 12.
  • the TG 141A and TG 141B transfer the electric charge stored in the photoelectric conversion region 12 to the pair of FDs 15A and 15B according to the drive signals applied to the gate electrodes 14A and 14B, respectively.
  • the pair of FD15A and 15B have a floating diffusion region that converts the electric charge transferred from the photoelectric conversion region 12 via the TG 141A and 141B including the gate electrodes 14A and 14B into an electric signal (for example, a voltage signal) and outputs the charge.
  • an electric signal for example, a voltage signal
  • reset transistors (RST) 143A and 143B are connected to FD15A and 15B, and are vertical via amplification transistors (AMP) 144A and 144B and selection transistors (SEL) 145A and 145B.
  • the signal line Lsig (Fig. 1) is connected.
  • a light-shielding wall in the inter-pixel region may be provided between the through electrode 17 and the photoelectric conversion region 12.
  • the inter-pixel region light-shielding wall is provided at a boundary portion with other adjacent pixels P in the XY plane.
  • the inter-pixel region shading wall includes, for example, a portion extending along the XZ plane and a portion extending along the YZ plane, and is provided so as to surround the photoelectric conversion region 12 of each pixel P. Further, the inter-pixel region light-shielding wall may be provided so as to surround the through electrode 17.
  • the inter-pixel region light-shielding wall is made of, for example, a material containing at least one of a simple substance metal having a light-shielding property, a metal alloy, a metal nitride, and a metal silicide. More specifically, the constituent materials of the interpixel region light-shielding wall include Al (aluminum), Cu (copper), Co (cobalt), W (tungsten), Ti (titanium), Ta (tantal), and Ni (nickel). ), Mo (molybdenum), Cr (chromium), Ir (iridium), platinum iridium, TiN (titanium nitride), tungsten silicon compound and the like.
  • the constituent material of the light-shielding wall in the inter-pixel region is not limited to the metal material, and graphite may be used for the constituent material.
  • the inter-pixel region light-shielding wall is not limited to the conductive material, and may be made of a non-conductive material having light-shielding properties such as an organic material.
  • an insulating layer made of an insulating material such as SiOx (silicon oxide) or aluminum oxide may be provided between the interpixel region light-shielding wall and the through electrode 17.
  • the inter-pixel region light-shielding wall and the through silicon via 17 may be insulated by providing a gap between the inter-pixel region light-shielding wall and the through electrode 17.
  • the through electrodes 17 include, for example, the through electrodes 43 described later, the read electrodes 26 of the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11, and the FD 131 and AMP 133 provided on the surface 11A of the semiconductor substrate 11. It is a connecting member that electrically connects to (see FIG. 4) described later. Through electrodes 17 and 43 are configured to transmit the signal charge generated in the organic photoelectric conversion unit 20 to the multilayer wiring layer 30 (FD131 and AMP133) via the read electrode 26.
  • the through silicon via 43 is a specific example corresponding to the “through silicon via” of the present disclosure.
  • the through electrode 17 is, for example, a transmission path for transmitting the signal charge generated in the organic photoelectric conversion unit 20 and transmitting the voltage for driving the charge storage electrode 25.
  • the through electrode 17 can be provided, for example, so as to penetrate the semiconductor substrate 11 and extend in the Z-axis direction.
  • the through electrode 17 can satisfactorily transfer the signal charge generated by the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11 to the front surface 11A side of the semiconductor substrate 11.
  • a fixed charge layer 13 and an insulating layer 16 are provided around the through electrode 17, whereby the through electrode 17 and the p-well region of the semiconductor substrate 11 are electrically insulated from each other.
  • the through electrode 17 is, for example, a silicon material doped with impurities such as PDAS (Phosphorus Doped Amorphous Silicon), aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), platinum (Pt). , Palladium (Pd), Copper (Cu), Hafnium (Hf), Titanium (Ta) and the like, and can be formed by using one or more of metal materials.
  • PDAS Phosphorus Doped Amorphous Silicon
  • Al aluminum
  • Ti titanium
  • Co cobalt
  • platinum Pt
  • Palladium (Pd), Copper (Cu), Hafnium (Hf), Titanium (Ta) and the like and can be formed by using one or more of metal materials.
  • the multilayer wiring layer 30 is provided in contact with the front surface 11A of the semiconductor substrate 11 facing the back surface 11B.
  • the multilayer wiring layer 30 includes a readout circuit having, for example, TG 141A, 141B, RST143A, 143B, AMP 144A, 144B, SEL145A, 145B and the like.
  • the intermediate layer 40 may have an optical filter 41, an insulating layer 42, a through electrode 43, a wiring layer 44, and a connecting portion 45.
  • the optical filter 41 is a specific example corresponding to the "optical filter" of the present disclosure.
  • the optical filter 41 has a transmission band in an infrared light region (for example, a wavelength of 880 nm or more and 1040 nm or less) in which photoelectric conversion is performed in the photoelectric conversion region 12. That is, the optical filter 41 is more likely to transmit light having a wavelength in the infrared light region than light having a wavelength in the visible light region (for example, a wavelength of 400 nm or more and 700 nm or less). Specifically, the optical filter 41 is made of an insulating material so as to selectively transmit light in the infrared light region and absorb at least a part of light having a wavelength in the visible light region. It has become.
  • the optical filter 41 has a plurality of through holes H2 provided at positions facing the through holes H1 one by one for each through hole H1.
  • the through hole H2 is a specific example corresponding to the "second through hole” of the present disclosure.
  • the through electrode 43 is in contact with the inner surface of the through hole H2.
  • the optical filter 41 is provided so as to be in contact with the side surface of the through electrode 43 and to cover the side surface of the through electrode 43.
  • the optical filter 41 is shared with other adjacent pixels P in the XY plane, and is formed over the entire pixel portion 100. That is, in the pixel portion 100, there is no gap between the through electrode 43 and the optical filter 41.
  • the optical filter 41 suppresses the incident of light having a wavelength in the visible light region transmitted through the organic photoelectric conversion unit 20 into the photoelectric conversion region 12 and prevents color mixing.
  • the optical filter 41 is formed in contact with the flat surface of the insulating layer 16. Therefore, for example, by forming the optical filter 41 on the flat surface of the insulating layer 16 in the manufacturing process, the optical filter 41 has no uneven film thickness.
  • the insulating layer 42 is formed in contact with the surface of the optical filter 41 on the organic photoelectric conversion unit 20 side.
  • the forming surface of the organic photoelectric conversion unit 20 (for example, the read electrode 26 and the charge storage electrode 25 described later) is formed.
  • the insulating layer 42 is a single-layer film made of, for example, one of inorganic insulating materials such as silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiON), or two of them. It is composed of a laminated film composed of seeds or more.
  • Organic insulating materials such as ethyl) 3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS), and octadecyltrichlorosilane (OTS) may be used.
  • the through electrode 43 is provided in the same layer as the optical filter 41, and is in contact with the upper part of the through electrode 17.
  • the through silicon via 43 may be provided directly above the through electrode 17, and in this case, it may be integrally formed with the through electrode 17.
  • the through electrode 43 is, for example, a silicon material doped with impurities such as PDAS (Phosphorus Doped Amorphous Silicon), aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), platinum (Pt). , Palladium (Pd), Copper (Cu), Hafnium (Hf), Titanium (Ta) and the like, and can be formed by using one or more of metal materials.
  • the through electrodes 43 are, for example, the read electrodes 26 of the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11 together with the through electrodes 17, and the FD 131 and AMP 133 provided on the front surface 11A of the semiconductor substrate 11 (described later). It is a connecting member that electrically connects to (see FIG. 4).
  • the through electrode 17 is, for example, a transmission path for transmitting the signal charge generated in the organic photoelectric conversion unit 20 and transmitting the voltage for driving the charge storage electrode 25.
  • the through silicon via 43 can be provided, for example, so as to penetrate the optical filter 41 and extend in the Z-axis direction.
  • the through electrode 43 can satisfactorily transfer the signal charge generated by the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11 to the front surface 11A side of the semiconductor substrate 11.
  • Insulating optical filters 41 are provided around the through electrodes 43, whereby the through electrodes 43 adjacent to each other are electrically insulated from each other.
  • the wiring layer 44 and the connecting portion 45 are members for electrically connecting the through electrode 43 and the reading electrode 26 described later.
  • the wiring layer 44 and the connecting portion 45 are embedded in the insulating layer 42.
  • the wiring layer 44 and the connecting portion 45 can be formed by using, for example, a metal material such as copper (Cu).
  • the organic photoelectric conversion unit 20 is provided between the optical filter 41 and the light incident surface Sin and at a position overlapping the photoelectric conversion unit 10 in the thickness direction of the semiconductor substrate 11.
  • the organic photoelectric conversion unit 20 has, for example, a read electrode 26 stacked in order from a position closest to the photoelectric conversion unit 10, a semiconductor layer 21, an organic photoelectric conversion layer 22, and an upper electrode 23.
  • the organic photoelectric conversion unit 20 further has an insulating layer 24 provided below the semiconductor layer 21 and a charge storage electrode 25 provided so as to face the semiconductor layer 21 via the insulating layer 24. There is.
  • the charge storage electrode 25 is a specific example corresponding to the “charge storage electrode” of the present disclosure.
  • the charge storage electrode 25 and the read electrode 26 are separated from each other, and are provided, for example, in the same layer.
  • the read electrode 26 is in contact with the upper end of the through electrode 17.
  • the upper electrode 23, the organic photoelectric conversion layer 22, and the semiconductor layer 21 are each provided in common in some pixels P of some of the plurality of pixels P in the pixel unit 100, or in the pixel unit 100. It may be provided in common in all of a plurality of pixels. The same applies to the other embodiments and modifications described after this embodiment.
  • another organic layer may be provided between the organic photoelectric conversion layer 22 and the semiconductor layer 21 and between the organic photoelectric conversion layer 22 and the upper electrode 23.
  • the read electrode 26, the upper electrode 23, and the charge storage electrode 25 are made of a light conductive conductive film, and are made of, for example, ITO (indium tin oxide).
  • ITO indium tin oxide
  • a dopant is added to tin oxide (SnOx) -based material to which a dopant is added, or zinc oxide (ZnO).
  • SnOx tin oxide
  • ZnO zinc oxide
  • zinc oxide-based material examples include aluminum zinc oxide (AZO) to which aluminum (Al) is added as a dopant, gallium zinc oxide (GZO) to which gallium (Ga) is added, and indium zinc oxide to which indium (In) is added. (IZO) can be mentioned.
  • AZO aluminum zinc oxide
  • GZO gallium zinc oxide
  • Indium zinc oxide indium (In) is added.
  • IZO indium zinc oxide to which indium (In) is added.
  • the constituent materials of the read electrode 26 the upper electrode 23 and the charge storage electrode 25, CuI, InSbO 4 , ZnMgO, CuInO 2 , MgIN 2O 4 , CdO, ZnSnO 3 or TiO 2 may be used.
  • a spinel-type oxide or an oxide having a YbFe 2 O 4 structure may be used.
  • the organic photoelectric conversion layer 22 converts light energy into electrical energy, and is formed, for example, containing two or more kinds of organic materials that function as p-type semiconductors and n-type semiconductors.
  • the p-type semiconductor functions as a relatively electron donor (donor)
  • the n-type semiconductor functions as an n-type semiconductor that relatively functions as an electron acceptor (acceptor).
  • the organic photoelectric conversion layer 22 has a bulk heterojunction structure in the layer.
  • the bulk heterojunction structure is a p / n junction surface formed by mixing p-type semiconductors and n-type semiconductors, and excitons generated when light is absorbed are electrons and holes at the p / n junction interface. Separate into and.
  • the organic photoelectric conversion layer 22 further includes three types of so-called dye materials that photoelectrically convert light in a predetermined wavelength band while transmitting light in another wavelength band. It may be composed of. It is preferable that the p-type semiconductor, the n-type semiconductor and the dye material have different absorption maximum wavelengths from each other. This makes it possible to absorb wavelengths in the visible light region in a wide range.
  • the organic photoelectric conversion layer 22 can be formed, for example, by mixing the above-mentioned various organic semiconductor materials and using a spin coating technique.
  • the organic photoelectric conversion layer 22 may be formed by using a vacuum vapor deposition method, a printing technique, or the like.
  • a material having a large bandgap value for example, a bandgap value of 3.0 eV or more
  • a higher mobility than the material constituting the organic photoelectric conversion layer 22 is used.
  • oxide semiconductor materials such as IGZO; transition metal dichalcogenides; silicon carbide; diamond; graphene; carbon nanotubes; and organic semiconductor materials such as condensed polycyclic hydrocarbon compounds and condensed heterocyclic compounds.
  • the charge storage electrode 25 forms a kind of capacitor together with the insulating layer 24 and the semiconductor layer 21, and the charge generated in the organic photoelectric conversion layer 22 is transmitted through a part of the semiconductor layer 21, for example, the insulating layer 24 of the semiconductor layer 21. It is designed to accumulate in the region corresponding to the charge storage electrode 25.
  • one charge storage electrode 25 is provided corresponding to each of one photoelectric conversion region 12, one color filter 52, and one on-chip lens 54.
  • the charge storage electrode 25 is connected to, for example, a vertical drive circuit 111.
  • the insulating layer 24 is formed of, for example, AlOx or the like.
  • the insulating layer 24 prevents the semiconductor layer 21 from directly contacting the layer of the semiconductor layer 21 provided on the charge storage electrode 25 side.
  • the insulating layer 24 is provided between, for example, the semiconductor layer 21, the insulating layer 42, the optical filter 41, and the charge storage electrode 25, and the semiconductor layer 21 is provided on the insulating layer 42, the optical filter 41, and the charge storage electrode 25. Prevent direct contact.
  • the organic photoelectric conversion unit 20 detects a part or all of the wavelengths in the visible light region. Further, it is desirable that the organic photoelectric conversion unit 20 has no sensitivity to the infrared light region.
  • the organic photoelectric conversion unit 20 has a laminated structure in which a read electrode 26, a semiconductor layer 21, an organic photoelectric conversion layer 22 and an upper electrode 23 provided directly above the through electrodes 17 and 43 are laminated in this order from the photoelectric conversion unit 10 side. Have.
  • the organic photoelectric conversion unit 20 further has a charge storage electrode 25 at a position facing the semiconductor layer 21 via a predetermined gap (insulation layer 24).
  • the read electrode 26 is a specific example corresponding to the “first electrode” of the present disclosure.
  • the semiconductor layer 21 is a specific example corresponding to the “semiconductor layer” of the present disclosure.
  • the organic photoelectric conversion layer 22 is a specific example corresponding to the “photoelectric conversion layer” of the present disclosure.
  • the upper electrode 23 is a specific example corresponding to the “second electrode” of the present disclosure.
  • the light incident from the upper electrode 23 side is absorbed by the organic photoelectric conversion layer 22.
  • the excitons (electron-hole pairs) generated by this move to the interface between the electron donor and the electron acceptor constituting the organic photoelectric conversion layer 22, and exciton separation, that is, dissociation into electrons and holes. do.
  • the charges generated here, that is, electrons and holes, move to the upper electrode 23 or the semiconductor layer 21 due to diffusion due to the difference in carrier concentration or the internal electric field due to the potential difference between the upper electrode 23 and the charge storage electrode 25, and are used as a photocurrent. Detected.
  • the read electrode 26 has a positive potential and the upper electrode 23 has a negative potential.
  • the holes generated by the photoelectric conversion in the organic photoelectric conversion layer 22 move to the upper electrode 23.
  • the electrons generated by the photoelectric conversion in the organic photoelectric conversion layer 22 are attracted to the charge storage electrode 25, and a part of the semiconductor layer 21, for example, a region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24. Accumulate in.
  • the organic photoelectric conversion layer 22 detects light in a wavelength region including a visible light region and performs photoelectric conversion.
  • the charge (for example, an electron) accumulated in the region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24 is read out as follows. Specifically, the potential V26 is applied to the read electrode 26, and the potential V25 is applied to the charge storage electrode 25. Here, the potential V26 is made higher than the potential V25 (V25 ⁇ V26). By doing so, the electrons accumulated in the region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 are transferred to the read electrode 26.
  • FIG. 3 is a circuit diagram showing an example of a readout circuit of the photoelectric conversion unit 10 constituting the pixel P shown in FIG. 2.
  • the readout circuit of the photoelectric conversion unit 10 has, for example, TG141A, 141B, OFG146, FD15A, 15B, RST143A, 143B, AMP144A, 144B, and SEL145A, 145B.
  • the TG 141A and 141B are connected between the photoelectric conversion region 12 and the FD 15A and 15B.
  • a drive signal is applied to the gate electrodes 14A and 14B of the TGs 141A and 141B and the TGs 141A and 141B become active, the transfer gates of the TGs 141A and 141B become conductive. As a result, the signal charge converted in the photoelectric conversion region 12 is transferred to the FDs 15A and 15B via the TGs 141A and 141B.
  • OFG146 is connected between the photoelectric conversion region 12 and the power supply.
  • a drive signal is applied to the gate electrode of the OFG146 and the OFG146 becomes active, the OFG146 becomes conductive.
  • the signal charge converted in the photoelectric conversion region 12 is discharged to the power supply via the OFG 146.
  • FD15A, 15B are connected between TG141A, 141B and AMP144A, 144B.
  • the FD15A and 15B convert the signal charge transferred by the TG 141A and 141B into a voltage signal and output it to the AMP 144A and 144B.
  • RST143A, 143B is connected between FD15A, 15B and a power supply.
  • a drive signal is applied to the gate electrodes of RST143A and 143B and RST143A and 143B are in the active state, the reset gates of RST143A and 143B are in the conductive state.
  • the potentials of FD15A and 15B are reset to the level of the power supply.
  • the AMP 144A and 144B have a gate electrode connected to the FD15A and 15B and a drain electrode connected to the power supply, respectively.
  • the AMP 144A and 144B are input units of a voltage signal reading circuit held by the FDs 15A and 15B, a so-called source follower circuit. That is, the source electrodes of the AMPs 144A and 144B are connected to the vertical signal line Lsig via the SEL145A and 145B, respectively, thereby forming a constant current source and a source follower circuit connected to one end of the vertical signal line Lsig.
  • the SEL145A and 145B are connected between the source electrodes of the AMP 144A and 144B and the vertical signal line Lsig, respectively.
  • a drive signal is applied to each gate electrode of the SEL145A and 145B and the SEL145A and 145B are in the active state, the SEL145A and 145B are in the conduction state and the pixel P is in the selection state.
  • the read signal (pixel signal) output from the AMP 144A and 144B is output to the vertical signal line Lsig via the SEL145A and 145B.
  • the solid-state image sensor 1 irradiates a subject with an optical pulse in the infrared region, and receives the light pulse reflected from the subject in the photoelectric conversion region 12 of the photoelectric conversion unit 10.
  • a plurality of charges are generated by the incident light pulse in the infrared region.
  • the plurality of charges generated in the photoelectric conversion region 12 are alternately distributed to the FD15A and the FD15B by alternately supplying the drive signals to the pair of gate electrodes 14A and 14B over an equal time period. There is.
  • the charge accumulation amount in the FD15A and the charge accumulation amount in the FD15B become phase-modulated values. Since the round-trip time of the optical pulse is estimated by demodulating these, the distance between the solid-state image sensor 1 and the subject can be obtained.
  • FIG. 4 is a circuit diagram showing an example of a readout circuit of the organic photoelectric conversion unit 20 constituting the pixel P1 shown in FIG.
  • the readout circuit of the organic photoelectric conversion unit 20 has, for example, FD131, RST132, AMP133, and SEL134.
  • the FD 131 is connected between the read electrode 26 and the AMP 133.
  • the FD 131 converts the signal charge transferred by the read electrode 26 into a voltage signal and outputs it to the AMP 133.
  • the RST132 is connected between the FD131 and the power supply.
  • a drive signal is applied to the gate electrode of the RST 132 and the RST 132 becomes active, the reset gate of the RST 132 becomes conductive.
  • the potential of the FD 131 is reset to the level of the power supply.
  • the AMP 133 has a gate electrode connected to the FD 131 and a drain electrode connected to the power supply.
  • the source electrode of the AMP 133 is connected to the vertical signal line Lsig via the SEL134.
  • the SEL134 is connected between the source electrode of the AMP 133 and the vertical signal line Lsig.
  • a drive signal is applied to the gate electrode of the SEL 134 and the SEL 134 becomes active, the SEL 134 becomes a conductive state and the pixel P1 becomes a selected state.
  • the read signal (pixel signal) output from the AMP 133 is output to the vertical signal line Lsig via the SEL134.
  • FIGS. 6 (A) and 6 (B) schematically show an example of the arrangement state of a plurality of pixels P1 in the pixel unit 100.
  • 5 (A) to 5 (C) show the arrangement state at the height position corresponding to the levels Lv1 to Lv3 in the Z-axis direction shown in FIG. 2, respectively.
  • 6 (A) and 6 (B) show the arrangement state at the height position corresponding to the levels Lv4 and Lv5 in the Z-axis direction shown in FIG. 2, respectively. That is, FIG. 5A shows the arrangement state of the on-chip lenses 54 in the XY plane, FIG.
  • FIG. 5B shows the arrangement state of the color filter 52 in the XY plane
  • FIG. 5C shows the arrangement state in the XY plane
  • 6 (A) shows the arrangement state of the through electrode 43 and the through hole H2 in the XY plane
  • FIG. 6 (B) shows the photoelectric conversion in the XY plane. It shows the arrangement state of the region 12, the through electrode 17, and the through hole H1.
  • the pixel unit 100 in the pixel unit 100, one on-chip lens 54, one color filter 52, and one charge storage electrode
  • the 25 and one photoelectric conversion region 12 are provided at positions corresponding to each other in the Z-axis direction.
  • the positions corresponding to each other here are, for example, positions that overlap each other in the Z-axis direction.
  • the light incident on one on-chip lens 54 includes one color filter 52, an organic photoelectric conversion unit 20 commonly provided in a plurality of pixels P1, and one photoelectric conversion region 12.
  • the charge generated by the photoelectric conversion in the organic photoelectric conversion unit 20 is attracted to one charge storage electrode 25, and corresponds to a part of the semiconductor layer 21, that is, the charge storage electrode 25 via the insulating layer 24. It suffices if it is accumulated in the area part. Further, when one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are in positions where they overlap each other in the Z-axis direction, their center positions are mutual. They may or may not match each other at their center positions. Note that FIGS. 5 (A) to 5 (C) and FIGS.
  • 6 (A) and 6 (B) show a plan configuration example of a total of 16 pixels P1 arranged four by each in the X-axis direction and the Y-axis direction. However, in the pixel unit 100, for example, a plurality of these 16 pixels P1 are arranged in both the X-axis direction and the Y-axis direction.
  • one red pixel PR1 having a red color filter 52R and receiving red light and one blue pixel having a blue color filter 52B and receiving blue light.
  • the PB1 and the two green pixels PG1 having the green color filter 52G and receiving the green light constitute one pixel group PP1.
  • the arrangement state of the plurality of pixels P shown in FIG. 5B is a so-called bayer arrangement.
  • the red pixels PR1 are arranged every other in the X-axis direction and the Y-axis direction.
  • the blue pixels PB1 are arranged every other in the X-axis direction and the Y-axis direction, and are located diagonally with respect to the red pixel PR1.
  • the green pixel PG1 is arranged so as to fill the gap between the red pixel PR1 and the blue pixel PB1.
  • FIG. 5B is an example, and the arrangement state of the plurality of pixels P1 in the pixel unit 100 of the present disclosure is not limited to this.
  • the read electrode 26 is provided at a ratio of one to one pixel P. Specifically, four read electrodes 26 are arranged near the periphery of the four charge storage electrodes 25 in one pixel group PP1. Note that FIG. 5C is an example, and the arrangement position of the read electrode 26 in the pixel portion 100 of the present disclosure is not limited to this.
  • through electrodes 17 and 43 are provided at a ratio of one per pixel P.
  • four through electrodes 17 and four through electrodes 43 are arranged near the periphery of the four charge storage electrodes 25 in one pixel group PP1.
  • the optical filter 41 is provided with a plurality of through holes H2, and a plurality of through electrodes 43 are provided for each through hole H2, and are in contact with the inner surface of the through hole H2 without a gap.
  • a plurality of through electrodes 43 (further, a plurality of through holes H2) are provided at positions facing the through holes H1 one by one for each through hole H2.
  • the semiconductor substrate 11 is provided with a plurality of through holes H1, and a plurality of through electrodes 17 are provided for each through hole H1.
  • FIGS. 6A and 6B are examples, and the arrangement positions of the through electrodes 17 and 43 in the pixel portion 100 of the present disclosure are not limited to this.
  • the through electrodes 17 and 43 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction. It is good to set it to. This is because the amount of infrared light that can be incident on the photoelectric conversion region 12 can be increased, which is advantageous for improving the infrared light detection sensitivity in each pixel P1.
  • the plurality of through electrodes 17 and the plurality of through electrodes 43 are, for example, near the periphery of 16 adjacent pixels P1 (4 rows and 4 columns) in the XY plane, as shown in FIGS. 6A and 6B. It is provided at equal intervals.
  • the plurality of through electrodes 17 and the plurality of through electrodes 43 for example, as shown in FIGS. 6A and 6B, have 16 adjacent pixels P1 (4 rows and 4 columns) equally spaced in the XY plane. It is provided so as to surround it with.
  • the plurality of through electrodes 17 and the plurality of through electrodes 43 may be regularly arranged so as to reflect infrared light.
  • the intervals between the plurality of through electrodes 17 and the intervals between the plurality of through electrodes 43 are, for example, 260 nm, 200 nm, 140 nm, 120 nm, or 100 nm.
  • the width of each through electrode 17 is, for example, half the distance between the plurality of through electrodes 17.
  • the width of each through electrode 43 is, for example, half the distance between the plurality of through electrodes 43.
  • FIG. 7A to 7F show an example of the manufacturing process of the solid-state image sensor 1 of the present embodiment.
  • the semiconductor substrate 11 in which the through hole H1 is formed is prepared (FIG. 7A).
  • the wiring provided in the multilayer wiring layer 30 is exposed at the bottom of the through hole H1, and the side surface of the through hole H1 and the back surface 11B of the semiconductor substrate 11 are covered with the fixed charge layer 13.
  • the insulating layer 16 is formed so as to embed the through hole H1 and cover the back surface 11B (FIG. 7B).
  • the upper surface of the insulating layer 16 is a flat surface.
  • the wiring of the multilayer wiring layer 30 is connected from the portion of the optical filter 41 facing the through hole H1 through the through hole H1.
  • a through hole H3 is formed to an exposed depth (FIG. 7D).
  • the solid-state imaging device 1 of the present embodiment has an organic photoelectric conversion unit 20 that detects light having a wavelength in the visible light region stacked in order from the incident side and performs photoelectric conversion, and a transmission band in the infrared light region. It has an optical filter 41 and a photoelectric conversion unit 10 that detects light having a wavelength in the infrared light region and performs photoelectric conversion. Therefore, a visible light image composed of a red light signal, a green light signal, and a blue light signal obtained from the red pixel PR, the green pixel PG, and the blue pixel PB, respectively, and infrared rays obtained from all of the plurality of pixels P. An infrared light image using an optical signal can be simultaneously acquired at the same position in the XY in-plane direction. Therefore, high integration in the in-plane direction of XY can be realized.
  • the photoelectric conversion unit 10 has a pair of gate electrodes 14A and 14B and FD15A and 15B, it is possible to acquire an infrared light image as a distance image including information on the distance to the subject. .. Therefore, according to the solid-state image sensor 1 of the present embodiment, it is possible to obtain both a high-resolution visible light image and an infrared light image having depth information at the same time.
  • the organic photoelectric conversion unit 20 has a structure in which the read electrode 26, the semiconductor layer 21, the organic photoelectric conversion layer 22 and the upper electrode 23 are laminated in this order, and the insulation provided below the semiconductor layer 21. It has a layer 24 and a charge storage electrode 25 provided so as to face the semiconductor layer 21 via the insulating layer 24 thereof. Therefore, in the organic photoelectric conversion layer 22, the charge generated by the photoelectric conversion can be accumulated in a part of the semiconductor layer 21, for example, in the region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24. Therefore, for example, it is possible to remove the electric charge in the semiconductor layer 21 at the start of exposure, that is, to completely deplete the semiconductor layer 21.
  • kTC noise can be reduced, so that deterioration of image quality due to random noise can be suppressed.
  • charges for example, electrons
  • recombination of holes and electrons at the time of charge accumulation is prevented, and the accumulated charges (for example) are prevented.
  • the transfer efficiency of electrons) to the read electrode 26 can be increased, and the generation of dark current can be suppressed.
  • one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 correspond to each other in the Z-axis direction. It is provided at the position to be used. Therefore, an infrared optical signal can be obtained at a position corresponding to each of the red pixel PR1, the green pixel PG1, and the blue pixel PB1. Therefore, in the pixel P1 of the present embodiment, an infrared light image having a higher resolution can be obtained as compared with the pixel P2 of the second embodiment and the pixel P3 of the third embodiment described later.
  • the red, green, and blue color filters 52R, 52G, and 52B are provided, respectively, to receive red light, green light, and blue light, respectively, to acquire a color visible light image.
  • a black-and-white visible light image may be acquired without providing the color filter 52.
  • the through electrode 17 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction, the infrared light detection sensitivity in each pixel P1 is improved. Can be made to.
  • the through electrode 43 penetrating the through hole H2 provided in the optical filter 41 is in contact with the inner surface of the through hole H2 provided in the optical filter 41.
  • the optical filter 41 is formed in contact with the flat surface of the insulating layer 16 in which the through hole H1 is embedded.
  • the optical filter 41 has no uneven film thickness, so that the infrared light detection sensitivity in each pixel P1 is lowered. It can be suppressed. Further, since kTC noise can be reduced, deterioration of image quality due to random noise can be suppressed.
  • the plurality of through electrodes 17 and the plurality of through electrodes 43 are regularly arranged so as to reflect infrared light, infrared rays between adjacent photoelectric conversion regions 12 are present. It is possible to suppress oblique incidence of light and prevent color mixing.
  • FIG. 8 shows an example of a modification of the schematic configuration of the pixel P of the solid-state image sensor 1 of the above embodiment in Lv4.
  • a plurality of through holes H4 that penetrate the optical filter 41 may be provided.
  • the through hole H4 is a specific example corresponding to the "third through hole" of the present disclosure.
  • the plurality of through holes H4 are provided one by one in each of the two through holes H2 adjacent to each other in the plurality of through holes H2.
  • a plurality of reflective layers 46 are provided for each through hole H4, and function as a slit partition wall that reflects infrared light.
  • Each reflective layer 46 is made of a metal material such as tungsten (W).
  • the reflective layer 46 is a specific example corresponding to the “reflective layer” of the present disclosure.
  • FIGS. 7A and 9B show an example of the manufacturing process of the solid-state image sensor 1 of this modified example.
  • the through hole H3 is formed from the portion of the optical filter 41 facing the through hole H1 to the depth where the wiring of the multilayer wiring layer 30 is exposed through the through hole H1.
  • the through hole H4 is formed from the portion of the optical filter 41 facing the through hole H1 to the depth at which the flat surface of the insulating layer 16 is exposed (FIGS. 7D and 9A).
  • the through electrodes 17 and 43 are formed so as to embed the through hole H3, and the reflective layer 46 is formed so as to embed the through hole H4 (FIGS. 7E and 9B).
  • the wiring layer 44 and the connecting portion 45 are formed, and the insulating layer 42 is formed so as to embed the wiring layer 44 and the connecting portion 45 (FIG. 7F).
  • the organic photoelectric conversion unit 20 the sealing film 51, the color filter 52, and the flattening film 53 are formed, and the on-chip lens 54 is formed on the surface (light incident surface Sin) of the flattening film 53. In this way, the solid-state image sensor 1 of this modification is manufactured.
  • the reflective layer 46 is provided between the two through electrodes 43 adjacent to each other. As a result, it is possible to suppress oblique incident of infrared light between adjacent photoelectric conversion regions 12 and prevent color mixing.
  • FIG. 10 shows an example of a modification of the schematic configuration of the pixel P of the solid-state image sensor 1 of the above embodiment in Lv4.
  • a plurality of through holes H5 that penetrate the optical filter 41, the through holes H1 and the insulating layer 16 may be provided.
  • the through hole H5 is a specific example corresponding to the "first through hole” and "second through hole” of the present disclosure.
  • the plurality of through holes H5 are provided one by one or a plurality of through holes H5 between the two through holes H1 and H2 adjacent to each other among the plurality of through holes H1 and H2.
  • a plurality of dummy through electrodes 47 are provided for each through hole H5.
  • Each through electrode 47 is made of a material common to the through electrodes 17 and 43.
  • the through silicon via 47 of each dummy is electrically separated from the multilayer wiring layer 30.
  • FIGS. 7A to 7C show an example of the manufacturing process of the solid-state image sensor 1 of this modified example.
  • the through hole H3 is formed from the portion of the optical filter 41 facing the through hole H1 to the depth where the wiring of the multilayer wiring layer 30 is exposed through the through hole H1.
  • the through hole H5 is formed from a portion of the optical filter 41 facing the through hole H1 to a depth where the surface of the multilayer wiring layer 30 (only the insulating surface) is exposed through the through hole H1 (FIG. 7D, FIG. 11A).
  • the through electrodes 17 and 43 are formed so as to embed the through holes H3, and the through electrodes 47 are formed so as to embed the through holes H5 (FIGS. 7E and 11B).
  • the wiring layer 44 and the connecting portion 45 are formed, and the insulating layer 42 is formed so as to embed the wiring layer 44 and the connecting portion 45 (FIG. 7F).
  • the organic photoelectric conversion unit 20 the sealing film 51, the color filter 52, and the flattening film 53 are formed, and the on-chip lens 54 is formed on the surface (light incident surface Sin) of the flattening film 53. In this way, the solid-state image sensor 1 of this modification is manufactured.
  • one or a plurality of through electrodes 47 are provided between two through electrodes 43 adjacent to each other. As a result, it is possible to suppress oblique incident of infrared light between adjacent photoelectric conversion regions 12 and prevent color mixing.
  • FIG. 12 is a schematic diagram showing an example of the overall configuration of the photodetection system 201 according to the second embodiment of the present disclosure.
  • FIG. 13 is a schematic diagram showing an example of the circuit configuration of the photodetection system 201.
  • the photodetector system 201 includes a light emitting device 210 as a light source unit that emits light L2, and a photodetector 220 as a light receiving unit having a photoelectric conversion element.
  • the photodetector 220 the solid-state image sensor 1 described above can be used.
  • the light detection system 201 may further include a system control unit 230, a light source drive unit 240, a sensor control unit 250, a light source side optical system 260, and a camera side optical system 270.
  • the photodetector 220 can detect light L1 and light L2.
  • the light L1 is light in which ambient light from the outside is reflected by the subject (measurement object) 200 (FIG. 12).
  • the light L2 is light that is emitted by the light emitting device 210 and then reflected by the subject 200.
  • the light L1 is, for example, visible light, and the light L2 is, for example, infrared light.
  • the light L1 can be detected by the organic photoelectric conversion unit in the photodetector 220, and the light L2 can be detected by the photoelectric conversion unit in the photodetector 220.
  • the image information of the subject 200 can be acquired from the light L1, and the distance information between the subject 200 and the photodetection system 201 can be acquired from the light L2.
  • the photodetection system 201 can be mounted on an electronic device such as a smartphone or a moving body such as a car.
  • the light emitting device 210 can be composed of, for example, a semiconductor laser, a surface emitting semiconductor laser, or a vertical resonator type surface emitting laser (VCSEL).
  • VCSEL vertical resonator type surface emitting laser
  • the photoelectric conversion unit can measure the distance to the subject 200 by, for example, the light flight time (Time-of-Flight; TOF).
  • a detection method of the light L2 emitted from the light emitting device 210 by the photodetector 220 for example, a structured light method or a stereovision method can be adopted.
  • the distance between the photodetection system 201 and the subject 200 can be measured by projecting light of a predetermined pattern onto the subject 200 and analyzing the degree of distortion of the pattern.
  • the distance between the photodetection system 201 and the subject can be measured by acquiring two or more images of the subject 200 viewed from two or more different viewpoints.
  • the light emitting device 210 and the photodetector 220 can be synchronously controlled by the system control unit 230.
  • FIG. 14 is a block diagram showing a configuration example of the electronic device 2000 to which the present technology is applied.
  • the electronic device 2000 has a function as, for example, a camera.
  • the electronic device 2000 includes an optical unit 2001 composed of a lens group or the like, an optical detection device 2002 to which the above-mentioned solid-state image sensor 1 or the like (hereinafter referred to as a solid-state image sensor 1 or the like) is applied, and a DSP (camera signal processing circuit). Digital Signal Processor) circuit 2003 is provided.
  • the electronic device 2000 also includes a frame memory 2004, a display unit 2005, a recording unit 2006, an operation unit 2007, and a power supply unit 2008.
  • the DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, the operation unit 2007, and the power supply unit 2008 are connected to each other via the bus line 2009.
  • the optical unit 2001 captures incident light (image light) from the subject and forms an image on the image pickup surface of the photodetector 2002.
  • the photodetector 2002 converts the amount of incident light imaged on the imaging surface by the optical unit 2001 into an electric signal in pixel units and outputs it as a pixel signal.
  • the display unit 2005 comprises a panel-type display device such as a liquid crystal panel or an organic EL panel, and displays a moving image or a still image captured by the photodetector 2002.
  • the recording unit 2006 records a moving image or a still image captured by the optical detection device 2002 on a recording medium such as a hard disk or a semiconductor memory.
  • the operation unit 2007 issues operation commands for various functions of the electronic device 2000 under the operation of the user.
  • the power supply unit 2008 appropriately supplies various power sources that serve as operating power sources for the DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, and the operation unit 2007 to these supply targets.
  • the technique according to the present disclosure can be applied to various products.
  • the techniques according to the present disclosure may be applied to an endoscopic surgery system.
  • FIG. 15 is a block diagram showing an example of a schematic configuration of a patient's internal information acquisition system using a capsule endoscope to which the technique according to the present disclosure (the present technique) can be applied.
  • the internal information acquisition system 10001 is composed of a capsule endoscope 10100 and an external control device 10200.
  • the capsule endoscope 10100 is swallowed by the patient at the time of examination.
  • the capsule-type endoscope 10100 has an imaging function and a wireless communication function, and moves inside an organ such as the stomach and intestine by peristaltic movement until it is naturally excreted from the patient, and inside the organ.
  • Images (hereinafter, also referred to as internal organ images) are sequentially imaged at predetermined intervals, and information about the internal organ images is sequentially wirelessly transmitted to an external control device 10200 outside the body.
  • the external control device 10200 comprehensively controls the operation of the internal information acquisition system 10001. Further, the external control device 10200 receives information about the internal image transmitted from the capsule endoscope 10100, and based on the information about the received internal image, the internal image is displayed on a display device (not shown). Generate image data to display.
  • the internal information acquisition system 10001 in this way, it is possible to obtain an internal image of the inside of the patient at any time from the time when the capsule endoscope 10100 is swallowed until it is discharged.
  • the capsule-type endoscope 10100 has a capsule-type housing 10101, and in the housing 10101, a light source unit 10111, an image pickup unit 10112, an image processing unit 10113, a wireless communication unit 10114, a power feeding unit 10115, and a power supply unit are contained.
  • the 10116 and the control unit 10117 are housed.
  • the light source unit 10111 is composed of, for example, a light source such as an LED (light emission diode), and irradiates the imaging field of view of the imaging unit 10112 with light.
  • a light source such as an LED (light emission diode)
  • the image pickup unit 10112 is composed of an image pickup element and an optical system including a plurality of lenses provided in front of the image pickup element.
  • the reflected light of the light irradiated to the body tissue to be observed (hereinafter referred to as observation light) is collected by the optical system and incident on the image pickup element.
  • the observation light incident on the image pickup device is photoelectrically converted, and an image signal corresponding to the observation light is generated.
  • the image signal generated by the image pickup unit 10112 is provided to the image processing unit 10113.
  • the image processing unit 10113 is composed of a processor such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit), and performs various signal processing on the image signal generated by the image pickup unit 10112.
  • the image processing unit 10113 provides the signal-processed image signal to the wireless communication unit 10114 as RAW data.
  • the wireless communication unit 10114 performs predetermined processing such as modulation processing on the image signal processed by the image processing unit 10113, and transmits the image signal to the external control device 10200 via the antenna 10114A. Further, the wireless communication unit 10114 receives a control signal related to the drive control of the capsule endoscope 10100 from the external control device 10200 via the antenna 10114A. The wireless communication unit 10114 provides the control unit 10117 with a control signal received from the external control device 10200.
  • the power feeding unit 10115 is composed of an antenna coil for receiving power, a power regeneration circuit that regenerates power from the current generated in the antenna coil, a booster circuit, and the like. In the power feeding unit 10115, electric power is generated using the so-called non-contact charging principle.
  • the power supply unit 10116 is composed of a secondary battery and stores the electric power generated by the power supply unit 10115.
  • FIG. 15 in order to avoid complication of the drawing, the illustration of the arrow indicating the power supply destination from the power supply unit 10116 is omitted, but the power stored in the power supply unit 10116 is the light source unit 10111. , Is supplied to the image pickup unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the control unit 10117, and can be used to drive these.
  • the control unit 10117 is composed of a processor such as a CPU, and is a control signal transmitted from the external control device 10200 to drive the light source unit 10111, the image pickup unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the power supply unit 10115. Control as appropriate according to.
  • the external control device 10200 is composed of a processor such as a CPU and GPU, or a microcomputer or a control board on which a processor and a storage element such as a memory are mixedly mounted.
  • the external control device 10200 controls the operation of the capsule endoscope 10100 by transmitting a control signal to the control unit 10117 of the capsule endoscope 10100 via the antenna 10200A.
  • the irradiation condition of light to the observation target in the light source unit 10111 can be changed by a control signal from the external control device 10200.
  • the imaging conditions for example, the frame rate in the imaging unit 10112, the exposure value, etc.
  • the content of processing in the image processing unit 10113 and the conditions for transmitting the image signal by the wireless communication unit 10114 may be changed by the control signal from the external control device 10200. ..
  • the external control device 10200 performs various image processing on the image signal transmitted from the capsule type endoscope 10100, and generates image data for displaying the captured internal image on the display device.
  • the image processing includes, for example, development processing (demosaic processing), high image quality processing (band enhancement processing, super-resolution processing, NR (Noise reduction) processing and / or camera shake correction processing, etc.), and / or enlargement processing ( Various signal processing such as electronic zoom processing) can be performed.
  • the external control device 10200 controls the drive of the display device to display the captured internal image based on the generated image data.
  • the external control device 10200 may have the generated image data recorded in a recording device (not shown) or printed out in a printing device (not shown).
  • the above is an example of an in-vivo information acquisition system to which the technology according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to, for example, the image pickup unit 10112 among the configurations described above. Therefore, high image detection accuracy can be obtained in spite of its small size.
  • the technique according to the present disclosure (the present technique) can be applied to various products.
  • the techniques according to the present disclosure may be applied to an endoscopic surgery system.
  • FIG. 16 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technique according to the present disclosure (the present technique) can be applied.
  • FIG. 16 illustrates how the surgeon (doctor) 11131 is performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000.
  • the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as an abdominal tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100.
  • a cart 11200 equipped with various devices for endoscopic surgery.
  • the endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101.
  • the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.
  • An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101.
  • a light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens.
  • the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image sensor are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image sensor by the optical system.
  • the observation light is photoelectrically converted by the image pickup device, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted to the camera control unit (CCU: Camera Control Unit) 11201 as RAW data.
  • CCU Camera Control Unit
  • the CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.
  • the light source device 11203 is composed of, for example, a light source such as an LED (light emission diode), and supplies the irradiation light for photographing the surgical site or the like to the endoscope 11100.
  • a light source such as an LED (light emission diode)
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
  • the treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for cauterizing, incising, sealing a blood vessel, or the like.
  • the pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator. Is sent.
  • the recorder 11207 is a device capable of recording various information related to surgery.
  • the printer 11208 is a device capable of printing various information related to surgery in various formats such as text, images, and graphs.
  • the light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof.
  • a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out.
  • the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to correspond to each of RGB. It is also possible to capture the image in a time-division manner. According to this method, a color image can be obtained without providing a color filter in the image pickup device.
  • the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals.
  • the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change of the light intensity to acquire an image in time division and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
  • the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue, the surface layer of the mucous membrane is irradiated with light in a narrower band than the irradiation light (that is, white light) during normal observation.
  • narrow band imaging in which a predetermined tissue such as a blood vessel is photographed with high contrast, is performed.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light.
  • the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating the excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 may be configured to be capable of supplying narrowband light and / or excitation light corresponding to such special light observation.
  • FIG. 17 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG.
  • the camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and CCU11201 are communicably connected to each other by a transmission cable 11400.
  • the lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101.
  • the observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the image pickup element constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type).
  • each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them.
  • the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to the 3D (dimensional) display, respectively.
  • the 3D display enables the operator 11131 to more accurately grasp the depth of the living tissue in the surgical site.
  • a plurality of lens units 11401 may be provided corresponding to each image pickup element.
  • the image pickup unit 11402 does not necessarily have to be provided on the camera head 11102.
  • the image pickup unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the drive unit 11403 is composed of an actuator, and the zoom lens and the focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the image pickup unit 11402 can be adjusted as appropriate.
  • the communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU11201.
  • the communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image. Contains information about the condition.
  • the image pickup conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU11201 based on the acquired image signal. good.
  • the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.
  • the camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102.
  • Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
  • the image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques.
  • the control unit 11413 detects a surgical tool such as forceps, a specific biological part, bleeding, mist when using the energy treatment tool 11112, etc. by detecting the shape, color, etc. of the edge of the object included in the captured image. Can be recognized.
  • the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can surely proceed with the surgery.
  • the transmission cable 11400 connecting the camera head 11102 and CCU11201 is an electric signal cable corresponding to electric signal communication, an optical fiber corresponding to optical communication, or a composite cable thereof.
  • the communication is performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.
  • the above is an example of an endoscopic surgery system to which the technique according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to, for example, the image pickup unit 11402 of the camera head 11102 among the configurations described above.
  • the technique according to the present disclosure By applying the technique according to the present disclosure to the image pickup unit 10402, a clearer image of the surgical site can be obtained, so that the visibility of the surgical site by the operator is improved.
  • the technique according to the present disclosure may be applied to other, for example, a microscopic surgery system.
  • the technique according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. You may.
  • FIG. 18 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technique according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are shown as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 has a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating braking force of the vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, turn signals or fog lamps.
  • the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the image pickup unit 12031 is connected to the vehicle outside information detection unit 12030.
  • the vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image.
  • the out-of-vehicle information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
  • the image pickup unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the image pickup unit 12031 may be visible light or invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects the in-vehicle information.
  • a driver state detection unit 12041 that detects a driver's state is connected to the vehicle interior information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether or not the driver has fallen asleep.
  • the microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit.
  • a control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generating device, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the outside information detection unit 12030 or the inside information detection unit 12040, so that the driver can control the driver. It is possible to perform coordinated control for the purpose of automatic driving that runs autonomously without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information outside the vehicle acquired by the vehicle outside information detection unit 12030.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 12052 transmits an output signal of at least one of audio and image to an output device capable of visually or audibly notifying information to the passenger or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an onboard display and a head-up display.
  • FIG. 19 is a diagram showing an example of the installation position of the image pickup unit 12031.
  • the image pickup unit 12031 has image pickup units 12101, 12102, 12103, 12104, and 12105.
  • the image pickup units 12101, 12102, 12103, 12104, 12105 are provided at positions such as, for example, the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100.
  • the image pickup unit 12101 provided in the front nose and the image pickup section 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the image pickup units 12102 and 12103 provided in the side mirror mainly acquire images of the side of the vehicle 12100.
  • the image pickup unit 12104 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the image pickup unit 12105 provided on the upper part of the windshield in the vehicle interior is mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 19 shows an example of the shooting range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging range of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • the imaging range 12114 indicates the imaging range.
  • the imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 can be obtained.
  • At least one of the image pickup units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the image pickup units 12101 to 12104 may be a stereo camera including a plurality of image pickup elements, or may be an image pickup element having pixels for phase difference detection.
  • the microcomputer 12051 has a distance to each three-dimensional object within the image pickup range 12111 to 12114 based on the distance information obtained from the image pickup unit 12101 to 12104, and a temporal change of this distance (relative speed with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance in front of the preceding vehicle, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like that autonomously travels without relying on the driver's operation.
  • automatic braking control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the image pickup units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
  • At least one of the image pickup units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging unit 12101 to 12104.
  • recognition of a pedestrian is, for example, a procedure for extracting feature points in an image captured by an image pickup unit 12101 to 12104 as an infrared camera, and pattern matching processing is performed on a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine.
  • the audio image output unit 12052 determines the square contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the above is an example of a vehicle control system to which the technique according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to, for example, the image pickup unit 12031 among the configurations described above.
  • the technique according to the present disclosure By applying the technique according to the present disclosure to the image pickup unit 12031, it is possible to obtain a photographed image that is easier to see, and thus it is possible to reduce driver fatigue.
  • the image pickup apparatus of the present disclosure may be in the form of a module in which an image pickup unit and a signal processing unit or an optical system are packaged together.
  • a solid-state image pickup device that converts the amount of incident light imaged on the image pickup surface via an optical lens system into an electric signal on a pixel-by-pixel basis and outputs it as a pixel signal, and is mounted on the solid-state image pickup device.
  • the photoelectric conversion element of the present disclosure is not limited to such an image pickup device.
  • it may be any as long as it detects light from a subject, receives light, generates an electric charge according to the amount of received light by photoelectric conversion, and accumulates it.
  • the output signal may be a signal of image information or a signal of distance measurement information.
  • the photoelectric conversion unit 10 as the first photoelectric conversion unit is an iTOF sensor
  • the present disclosure is not limited to this. That is, the first photoelectric conversion unit is not limited to the one that detects the light having a wavelength in the infrared light region, and may detect the wavelength light in another wavelength region. Further, when the photoelectric conversion unit 10 is not an iTOF sensor, only one transfer transistor (TG) may be provided.
  • TG transfer transistor
  • the photoelectric conversion unit 10 including the photoelectric conversion region 12 and the organic photoelectric conversion unit 20 including the organic photoelectric conversion layer 22 are laminated with the intermediate layer 40 interposed therebetween.
  • the image pickup device is illustrated, the present disclosure is not limited to this.
  • the photoelectric conversion element of the present disclosure may have a structure in which two organic photoelectric conversion regions are laminated, or may have a structure in which two inorganic photoelectric conversion regions are laminated. ..
  • the photoelectric conversion unit 10 mainly detects wavelength light in the infrared light region to perform photoelectric conversion
  • the organic photoelectric conversion unit 20 mainly detects wavelength light in the visible light region.
  • the photoelectric conversion element of the present disclosure is not limited to this.
  • the wavelength range showing the sensitivity in the first photoelectric conversion unit and the second photoelectric conversion unit can be arbitrarily set.
  • constituent materials of each component of the photoelectric conversion element of the present disclosure are not limited to the materials mentioned in the above-described embodiments and the like.
  • the first photoelectric conversion unit or the second photoelectric conversion unit receives light in the visible light region and performs photoelectric conversion
  • the first photoelectric conversion unit or the second photoelectric conversion unit includes quantum dots. You may do so.
  • a pair of gate electrodes and a pair of electric charges that reach from the second photoelectric conversion layer via the pair of gate electrodes are accumulated in the first second photoelectric conversion layer.
  • the charge holding portion is illustrated and described, the present disclosure is not limited to this.
  • One gate electrode and one charge holding portion may be provided for one second photoelectric conversion layer.
  • three or more gate electrodes and three or more charge holding portions may be provided for one second photoelectric conversion layer.
  • the transistor for reading the charge of the second photoelectric conversion layer is not limited to the so-called vertical transistor, and may be a planar transistor.
  • the photoelectric conversion element as one embodiment of the present disclosure, for example, high-quality visible light image information and infrared light image information including distance information can be acquired by the above configuration. It should be noted that the effects described in the present specification are merely examples and are not limited to the description thereof, and other effects may be obtained.
  • the present technology can have the following configurations. (1) With a semiconductor substrate, A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
  • a wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
  • a plurality of through electrodes provided for each of the first through holes penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer.
  • An insulating layer that is formed so as to embed each of the first through holes and covers the first main surface and has a flat surface on the optical filter side is further provided.
  • a plurality of third through holes provided one by one between the two adjacent second through holes and penetrating the optical filter, and a plurality of third through holes.
  • the plurality of through electrodes include a plurality of first through electrodes electrically connected to the wiring layer and a plurality of second through electrodes electrically separated from the wiring layer.
  • the plurality of second through electrodes are provided one by one or a plurality of the first through electrodes between the two adjacent first through electrodes among the plurality of first through electrodes (1) to (3). ).
  • the photodetector according to any one of. (6) A second wavelength region including a visible light region, which is provided between the optical filter and the light incident surface and at a position overlapping the first photoelectric conversion unit in the thickness direction of the semiconductor substrate.
  • the photodetector according to any one of (1) to (5), wherein the through silicon via is electrically connected to the second photoelectric conversion unit.
  • the second photoelectric conversion unit is A laminated structure in which a first electrode, a semiconductor layer, a photoelectric conversion layer, and a second electrode provided directly above the through electrode are laminated in this order from the first photoelectric conversion unit side. It has a charge storage electrode provided at a position facing the semiconductor layer via a predetermined gap, and has a charge storage electrode.
  • a light emitting device that emits infrared light and Equipped with a photodetector
  • the photodetector is With a semiconductor substrate, A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
  • An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
  • a plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
  • a wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
  • a plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. And has a light detection system. (9) It is equipped with an optical unit, a signal processing unit, and a photodetection unit.
  • the photodetector With a semiconductor substrate, A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
  • a wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
  • a plurality of through electrodes provided for each of the first through holes penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. And electronic devices with.
  • a light detection system including a light emitting device that emits a first light included in a visible light region and a second light included in an infrared light region, and a light detecting device.
  • the photodetector is With a semiconductor substrate, A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
  • a wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
  • a plurality of through electrodes provided for each of the first through holes penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer.
  • the through electrode penetrating the through hole provided in the optical filter is formed on the inner surface of the through hole provided in the optical filter. I'm in contact.
  • there is no optical path between the light incident surface and the first photoelectric conversion unit so that the visible light transmitted through the light incident surface does not pass through the optical filter and is incident on the first photoelectric conversion unit.

Abstract

The optical detection device according to one embodiment of the present disclosure is provided with: a plurality of first photoelectric conversion units that are disposed in a semiconductor substrate, that detect light in a first wavelength region including an infrared light region, and that performs photoelectric conversion; a plurality of first through holes which penetrate through the semiconductor substrate and in which an insulation material is embedded; an insulative optical filter that is disposed between a light incident surface and a first main surface of the semiconductor substrate and that has a transmission band in the infrared light region; a plurality of second through holes that are respectively disposed for the first through holes at positions opposite to the first through holes and that penetrate through the optical filter; a wiring layer that is disposed in contact with a second main surface opposing the first main surface of the semiconductor substrate; and a plurality of penetration electrodes that are respectively disposed for the first through holes, that penetrate through the first through holes and the second through holes, and that are in contact with the wiring layer and the inner surfaces of the second through holes.

Description

光検出装置、光検出システム、電子機器および移動体Photodetectors, photodetectors, electronic devices and mobiles
　本開示は、光検出装置、光検出システム、電子機器および移動体に関する。 This disclosure relates to photodetectors, photodetectors, electronic devices and mobiles.
　これまでに、主に可視光を受光して光電変換を行う第１の光電変換領域と、主に赤外光を受光して光電変換を行う第２の光電変換領域との積層構造を有する光検出装置が提案されている（例えば、特許文献１参照）。 So far, light having a laminated structure of a first photoelectric conversion region that mainly receives visible light and performs photoelectric conversion and a second photoelectric conversion region that mainly receives infrared light and performs photoelectric conversion. A detection device has been proposed (see, for example, Patent Document 1).
特開２０１７－２０８４９６号公報Japanese Unexamined Patent Publication No. 2017-208476
　ところで、光検出装置では、機能向上が求められている。従って、高い機能を有する光検出装置、光検出システム、電子機器および移動体を提供することが望まれる。 By the way, the photodetector is required to have improved functions. Therefore, it is desired to provide a photodetector, a photodetector system, an electronic device and a mobile body having high functions.
　本開示の一実施の形態に係る光検出装置は、半導体基板と、半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔とを備えている。この光検出装置は、さらに、半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、第１の貫通孔と対向する位置に第１の貫通孔ごとに１つずつ設けられ、光学フィルタを貫通する複数の第２の貫通孔とを備えている。この光検出装置は、さらに、半導体基板の、第１の主面と対向する第２の主面に接して設けられた配線層と、第１の貫通孔ごとに１つずつ設けられ、第１の貫通孔および第２の貫通孔を貫通するとともに、第２の貫通孔の内面および配線層に接する複数の貫通電極とを備えている。 The photodetector according to the embodiment of the present disclosure includes a semiconductor substrate and a plurality of firsts provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion. The photoelectric conversion unit is provided with a plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate. This optical detection device is further provided between the first main surface of the semiconductor substrate and the light incident surface, and is opposed to an insulating optical filter having a transmission band in the infrared light region and the first through hole. One is provided for each first through hole at the position where the light is formed, and a plurality of second through holes that penetrate the optical filter are provided. This photodetector is further provided with a wiring layer provided in contact with the second main surface of the semiconductor substrate facing the first main surface, and one for each first through hole. It is provided with a plurality of through electrodes that penetrate the through hole and the second through hole and are in contact with the inner surface of the second through hole and the wiring layer.
　本開示の一実施の形態に係る光検出システムは、赤外光を発する発光装置と、光検出装置とを備えている。この光検出システムにおいて、光検出装置は、上記の光検出装置と同一の構成要素を有している。 The light detection system according to the embodiment of the present disclosure includes a light emitting device that emits infrared light and a light detection device. In this photodetector, the photodetector has the same components as the photodetector described above.
　本開示の一実施の形態に係る電子機器は、光学部と、信号処理部と、光検出部とを備えている。この電子機器において、光検出部は、上記の光検出装置と同一の構成要素を有している。 The electronic device according to the embodiment of the present disclosure includes an optical unit, a signal processing unit, and a photodetector unit. In this electronic device, the photodetector has the same components as the photodetector described above.
　本開示の一実施の形態に係る移動体は、可視光域に含まれる第１の光および赤外光域に含まれる第２の光を発する発光装置と、光検出装置とを有する光検出システムを備えている。この移動体において、光検出装置は、上記の光検出装置と同一の構成要素を有している。 The moving body according to the embodiment of the present disclosure is a light detection system including a light emitting device that emits a first light included in a visible light region and a second light included in an infrared light region, and a photodetector. It is equipped with. In this moving body, the photodetector has the same components as the photodetector described above.
　本開示の一実施の形態に係る光検出装置、光検出システム、電子機器および移動体では、光学フィルタに設けられた貫通孔を貫通する貫通電極は、光学フィルタに設けられた貫通孔の内面に接している。これにより、光入射面を透過した可視光が光学フィルタを透過せずに第１の光電変換部に入射する光路が、光入射面と第１の光電変換部との間に存在しない。その結果、隣接する第１の光電変換部同士の間における可視光の斜入射を抑制し、混色を防ぐことができる。 In the light detection device, the light detection system, the electronic device, and the moving body according to the embodiment of the present disclosure, the through electrode penetrating the through hole provided in the optical filter is formed on the inner surface of the through hole provided in the optical filter. I'm in contact. As a result, there is no optical path between the light incident surface and the first photoelectric conversion unit so that the visible light transmitted through the light incident surface does not pass through the optical filter and is incident on the first photoelectric conversion unit. As a result, it is possible to suppress oblique incident of visible light between the adjacent first photoelectric conversion units and prevent color mixing.
本開示の第１の実施の形態に係る固体撮像装置の一例を示す概略構成図である。It is a schematic block diagram which shows an example of the solid-state image pickup apparatus which concerns on 1st Embodiment of this disclosure. 図１に示した画素の概略構成の一例を表す断面模式図である。It is sectional drawing which shows an example of the schematic structure of the pixel shown in FIG. 図２に示したｉＴＯＦセンサ部の読み出し回路の一例を表す回路図である。It is a circuit diagram which shows an example of the reading circuit of the iTOF sensor part shown in FIG. 図２に示した有機光電変換部の読み出し回路の一例を表す回路図である。It is a circuit diagram which shows an example of the reading circuit of the organic photoelectric conversion part shown in FIG. （Ａ）図２に示した画素のＬｖ１における概略構成の一例を表す断面模式図である。（Ｂ）図２に示した画素のＬｖ２における概略構成の一例を表す断面模式図である。（Ｃ）図２に示した画素のＬｖ３における概略構成の一例を表す断面模式図である。(A) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 at Lv1. (B) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 in Lv2. (C) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 in Lv3. （Ａ）図２に示した画素のＬｖ４における概略構成の一例を表す断面模式図である。（Ｂ）図２に示した画素のＬｖ５における概略構成の一例を表す断面模式図である。(A) is a schematic cross-sectional view showing an example of the schematic configuration of the pixel shown in FIG. 2 in Lv4. (B) is a schematic cross-sectional view showing an example of a schematic configuration of the pixel shown in FIG. 2 at Lv5. 図２に示した画素の製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process of the pixel shown in FIG. 図７Ａに続く製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process following FIG. 7A. 図７Ｂに続く製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process following FIG. 7B. 図７Ｃに続く製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process following FIG. 7C. 図７Ｄに続く製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process following FIG. 7D. 図７Ｅに続く製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process following FIG. 7E. 図２に示した画素のＬｖ４における概略構成の一変形例を表す断面模式図である。It is sectional drawing which shows one modification of the schematic structure in Lv4 of the pixel shown in FIG. 図８に示した画素の製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process of the pixel shown in FIG. 図９Ａに続く製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process following FIG. 9A. 図２に示した画素のＬｖ４における概略構成の一変形例を表す断面模式図である。It is sectional drawing which shows one modification of the schematic structure in Lv4 of the pixel shown in FIG. 図１０に示した画素の製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process of the pixel shown in FIG. 図１１Ａに続く製造過程の一例を表す断面模式図である。It is sectional drawing which shows an example of the manufacturing process following FIG. 11A. 本開示の第２の実施の形態に係る光検出システムの全体構成の一例を表す模式図である。It is a schematic diagram which shows an example of the whole structure of the light detection system which concerns on the 2nd Embodiment of this disclosure. 図１２に示した光検出システムの機能ブロックの一例を表す模式図である。It is a schematic diagram which shows an example of the functional block of the photodetection system shown in FIG. 電子機器の全体構成例を表す概略図である。It is a schematic diagram which shows the whole structure example of the electronic device. 体内情報取得システムの概略的な構成の一例を示すブロック図である。It is a block diagram which shows an example of the schematic structure of the in-vivo information acquisition system. 内視鏡手術システムの概略的な構成の一例を示す図である。It is a figure which shows an example of the schematic structure of an endoscopic surgery system. カメラヘッド及びＣＣＵの機能構成の一例を示すブロック図である。It is a block diagram which shows an example of the functional structure of a camera head and a CCU. 車両制御システムの概略的な構成の一例を示すブロック図である。It is a block diagram which shows an example of the schematic structure of a vehicle control system. 車外情報検出部及び撮像部の設置位置の一例を示す説明図である。It is explanatory drawing which shows an example of the installation position of the vehicle exterior information detection unit and the image pickup unit.
　以下、本開示の実施の形態について図面を参照して詳細に説明する。なお、説明は以下の順序で行う。
１．第１の実施の形態
　可視光画像情報を得る有機光電変換部と、赤外光を受光して距離情報を得る
　ｉＴＯＦセンサ部とを備えた固体撮像装置の例。
　２．第１の実施の形態の変形例
　　変形例Ａ：スリット隔壁を設けた例
　　変形例Ｂ：ダミーの貫通電極を設けた例
３．第２の実施の形態
　発光装置と光検出装置とを備えた光検出システムの例。
４．電子機器への適用例
５．体内情報取得システムへの応用例
６．内視鏡手術システムへの応用例
７．移動体への適用例
８．その他の変形例 Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The explanation will be given in the following order.
1. 1. First Embodiment An example of a solid-state image pickup device including an organic photoelectric conversion unit that obtains visible light image information and an iTOF sensor unit that receives infrared light and obtains distance information.
2. 2. Modification example of the first embodiment Modification A: Example of providing a slit partition wall Modification example B: Example of providing a dummy through electrode 3. Second Embodiment An example of a photodetection system including a light emitting device and a photodetector.
4. Application example to electronic devices 5. Application example to internal information acquisition system 6. Application example to endoscopic surgery system 7. Application example to mobile body 8. Other variants
＜１．第１の実施の形態＞
［固体撮像装置１の構成］
（全体構成例）
　図１は、本開示の一実施の形態に係る固体撮像装置１の全体構成例を表している。固体撮像装置１は、例えば、ＣＭＯＳ（Complementary Metal Oxide Semiconductor）イメージセンサである。固体撮像装置１は、例えば光学レンズ系を介して被写体からの入射光（像光）を取り込み、撮像面上に結像された入射光を画素単位で電気信号に変換して画素信号として出力する。固体撮像装置１は、例えば半導体基板１１上に、撮像エリアとしての画素部１００と、その画素部１００の周辺領域に配置された垂直駆動回路１１１、カラム信号処理回路１１２、水平駆動回路１１３、出力回路１１４、制御回路１１５および入出力端子１１６とを備えている。固体撮像装置１は、本開示の「光検出装置」に対応する一具体例である。半導体基板１１は、本開示の「半導体基板」に対応する一具体例である。 <1. First Embodiment>
[Structure of solid-state image sensor 1]
(Overall configuration example)
FIG. 1 shows an overall configuration example of the solid-state image sensor 1 according to the embodiment of the present disclosure. The solid-state image sensor 1 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The solid-state imaging device 1 captures incident light (image light) from a subject via, for example, an optical lens system, converts the incident light imaged on the imaging surface into an electric signal on a pixel-by-pixel basis, and outputs it as a pixel signal. .. The solid-state image sensor 1 includes, for example, a pixel unit 100 as an image pickup area on a semiconductor substrate 11, a vertical drive circuit 111 arranged in a peripheral region of the pixel unit 100, a column signal processing circuit 112, a horizontal drive circuit 113, and an output. It includes a circuit 114, a control circuit 115, and an input / output terminal 116. The solid-state image sensor 1 is a specific example corresponding to the "photodetector" of the present disclosure. The semiconductor substrate 11 is a specific example corresponding to the "semiconductor substrate" of the present disclosure.
　画素部１００は、例えば、行列状に２次元配置された複数の画素Ｐを有している。画素部１００には、例えば水平方向（紙面横方向）に並ぶ複数の画素Ｐにより構成される画素行と、垂直方向（紙面縦方向）に並ぶ複数の画素Ｐにより構成される画素列とがそれぞれ複数設けられている。画素部１００には、例えば、画素行ごとに１つの画素駆動線Ｌread（行選択線およびリセット制御線）が配線され、画素列ごとに１つの垂直信号線Ｌsigが配線されている。画素駆動線Ｌreadは、各画素Ｐからの信号読み出しのための駆動信号を伝送するものである。複数の画素駆動線Ｌreadの端部は、垂直駆動回路１１１の各画素行に対応した複数の出力端子にそれぞれ接続されている。 The pixel unit 100 has, for example, a plurality of pixels P arranged two-dimensionally in a matrix. In the pixel unit 100, for example, a pixel row composed of a plurality of pixels P arranged in the horizontal direction (horizontal direction of the paper surface) and a pixel row composed of a plurality of pixels P arranged in the vertical direction (vertical direction of the paper surface) are respectively. There are multiple. For example, one pixel drive line Lread (row selection line and reset control line) is wired to the pixel unit 100 for each pixel row, and one vertical signal line Lsig is wired for each pixel column. The pixel drive line Lread transmits a drive signal for reading a signal from each pixel P. The ends of the plurality of pixel drive lines Lread are connected to a plurality of output terminals corresponding to each pixel row of the vertical drive circuit 111.
　垂直駆動回路１１１は、シフトレジスタやアドレスデコーダ等によって構成されており、画素部１００における各画素Ｐを、例えば、画素行単位で駆動する画素駆動部である。垂直駆動回路１１１によって選択走査された画素行の各画素Ｐから出力される信号は、垂直信号線Ｌsigの各々を通してカラム信号処理回路１１２に供給される。 The vertical drive circuit 111 is composed of a shift register, an address decoder, and the like, and is a pixel drive unit that drives each pixel P in the pixel unit 100, for example, in pixel row units. The signal output from each pixel P of the pixel row selectively scanned by the vertical drive circuit 111 is supplied to the column signal processing circuit 112 through each of the vertical signal lines Lsig.
　カラム信号処理回路１１２は、垂直信号線Ｌsig毎に設けられたアンプや水平選択スイッチ等によって構成されている。 The column signal processing circuit 112 is composed of an amplifier, a horizontal selection switch, etc. provided for each vertical signal line Lsig.
　水平駆動回路１１３は、シフトレジスタやアドレスデコーダ等によって構成され、カラム信号処理回路１１２の各水平選択スイッチを走査しつつ順番に駆動する。この水平駆動回路１１３による選択走査により、複数の垂直信号線Ｌsigの各々を通して伝送される各画素Ｐの信号が順番に水平信号線１２１に出力され、その水平信号線１２１を通じて半導体基板１１の外部へ伝送される。 The horizontal drive circuit 113 is composed of a shift register, an address decoder, etc., and drives in order while scanning each horizontal selection switch of the column signal processing circuit 112. By the selective scanning by the horizontal drive circuit 113, the signal of each pixel P transmitted through each of the plurality of vertical signal lines Lsig is sequentially output to the horizontal signal line 121, and is sent to the outside of the semiconductor substrate 11 through the horizontal signal line 121. Be transmitted.
　出力回路１１４は、カラム信号処理回路１１２の各々から水平信号線１２１を介して順次供給される信号に対し、信号処理を行って出力する。出力回路１１４は、例えば、バッファリングのみを行う場合もあるし、黒レベル調整、列ばらつき補正および各種デジタル信号処理等が行われる場合もある。 The output circuit 114 performs signal processing on the signals sequentially supplied from each of the column signal processing circuits 112 via the horizontal signal line 121, and outputs the signals. The output circuit 114 may, for example, perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.
　垂直駆動回路１１１、カラム信号処理回路１１２、水平駆動回路１１３、水平信号線１２１および出力回路１１４からなる回路部分は、半導体基板１１上に直に形成されていてもよいし、あるいは外部制御ＩＣに配設されたものであってもよい。また、それらの回路部分は、ケーブル等により接続された他の基板に形成されていてもよい。 The circuit portion including the vertical drive circuit 111, the column signal processing circuit 112, the horizontal drive circuit 113, the horizontal signal line 121, and the output circuit 114 may be formed directly on the semiconductor substrate 11, or may be used as an external control IC. It may be arranged. Further, those circuit portions may be formed on another substrate connected by a cable or the like.
　制御回路１１５は、半導体基板１１の外部から与えられるクロックや、動作モードを指令するデータ等を受け取り、また、撮像素子である画素Ｐの内部情報等のデータを出力する。制御回路１１５はさらに、各種のタイミング信号を生成するタイミングジェネレータを有し、当該タイミングジェネレータで生成された各種のタイミング信号を基に垂直駆動回路１１１、カラム信号処理回路１１２および水平駆動回路１１３等の周辺回路の駆動制御を行う。 The control circuit 115 receives the clock given from the outside of the semiconductor substrate 11, the data for instructing the operation mode, and the like, and outputs the data such as the internal information of the pixel P which is the image pickup element. The control circuit 115 further has a timing generator that generates various timing signals, and the vertical drive circuit 111, the column signal processing circuit 112, the horizontal drive circuit 113, and the like based on the various timing signals generated by the timing generator. It controls the drive of peripheral circuits.
　入出力端子１１６は、外部との信号のやり取りを行うものである。 The input / output terminal 116 exchanges signals with the outside.
（画素Ｐの断面構成例）
　図２は、画素部１００において行列状に配列された複数の画素Ｐのうちの一の画素Ｐ１における断面構成の一例を模式的に表している。 (Example of cross-sectional configuration of pixel P)
FIG. 2 schematically shows an example of a cross-sectional configuration in pixel P1 of one of a plurality of pixels P arranged in a matrix in the pixel unit 100.
　図２に示したように、画素Ｐ１は、例えば一の光電変換部１０と、一の有機光電変換部２０とが厚さ方向であるＺ軸方向において積層された構造を有する、いわゆる縦方向分光型の撮像素子である。撮像素子である画素Ｐ１は、本開示の「光電変換素子」に対応する一具体例である。光電変換部１０は、本開示の「第１の光電変換部」に対応する一具体例である。有機光電変換部２０は、本開示の「第２の光電変換部」に対応する一具体例である。画素Ｐ１は、光電変換部１０と有機光電変換部２０との間に設けられた中間層４０と、光電変換部１０から見て有機光電変換部２０と反対側に設けられた多層配線層３０とをさらに有している。多層配線層３０は、本開示の「配線層」に対応する一具体例である。さらに、有機光電変換部２０から見て光電変換部１０と反対側の光入射側には、例えば、一の封止膜５１と、一のカラーフィルタ５２と、一の平坦化膜５３と、一のオンチップレンズ５４とが有機光電変換部２０に近い位置から順にＺ軸方向に沿って積層されている。以下、平坦化膜５３の表面（オンチップレンズ５４が接する面）を便宜的に光入射面Ｓｉｎと称する。ものとする。光入射面Ｓｉｎは、本開示の「光入射面」に対応する一具体例である。なお、封止膜５１および平坦化膜５３は、それぞれ、複数の画素Ｐにおいて共通に設けられていてもよい。 As shown in FIG. 2, the pixel P1 has a structure in which, for example, one photoelectric conversion unit 10 and one organic photoelectric conversion unit 20 are laminated in the Z-axis direction, which is the thickness direction, so-called longitudinal spectroscopy. It is a type image sensor. The pixel P1 which is an image pickup element is a specific example corresponding to the "photoelectric conversion element" of the present disclosure. The photoelectric conversion unit 10 is a specific example corresponding to the "first photoelectric conversion unit" of the present disclosure. The organic photoelectric conversion unit 20 is a specific example corresponding to the “second photoelectric conversion unit” of the present disclosure. Pixels P1 include an intermediate layer 40 provided between the photoelectric conversion unit 10 and the organic photoelectric conversion unit 20, and a multilayer wiring layer 30 provided on the opposite side of the organic photoelectric conversion unit 20 when viewed from the photoelectric conversion unit 10. Has more. The multilayer wiring layer 30 is a specific example corresponding to the "wiring layer" of the present disclosure. Further, on the light incident side opposite to the photoelectric conversion unit 10 when viewed from the organic photoelectric conversion unit 20, for example, one sealing film 51, one color filter 52, and one flattening film 53 are provided. The on-chip lens 54 is laminated along the Z-axis direction in order from the position closest to the organic photoelectric conversion unit 20. Hereinafter, the surface of the flattening film 53 (the surface in contact with the on-chip lens 54) is referred to as a light incident surface Sin for convenience. It shall be. The light incident surface Sin is a specific example corresponding to the “light incident surface” of the present disclosure. The sealing film 51 and the flattening film 53 may be provided in common in a plurality of pixels P, respectively.
（光電変換部１０）
　光電変換部１０は、例えば光飛行時間（Time-of-Flight ;TOF）により、距離画像（距離情報）を獲得する間接ＴＯＦ（以下、ｉＴＯＦという）センサである。光電変換部１０は、例えば、半導体基板１１と、光電変換領域１２と、固定電荷層１３と、一対のゲート電極１４Ａ，１４Ｂと、浮遊拡散領域である電荷電圧変換部（ＦＤ）１５Ａ，１５Ｂと、絶縁層１６と、貫通電極１７とを有している。貫通電極１７は、本開示の「貫通電極」に対応する一具体例である。 (Photoelectric conversion unit 10)
The photoelectric conversion unit 10 is an indirect TOF (hereinafter referred to as iTOF) sensor that acquires a distance image (distance information) by, for example, a light flight time (Time-of-Flight; TOF). The photoelectric conversion unit 10 includes, for example, a semiconductor substrate 11, a photoelectric conversion region 12, a fixed charge layer 13, a pair of gate electrodes 14A and 14B, and charge voltage conversion units (FD) 15A and 15B which are stray diffusion regions. It has an insulating layer 16 and a through electrode 17. The through silicon via 17 is a specific example corresponding to the “through silicon via” of the present disclosure.
　半導体基板１１は、表面１１Ａおよび裏面１１Ｂを含む、例えば、ｎ型のシリコン（Ｓｉ）基板であり、所定領域にｐウェルを有している。表面１１Ａは、本開示の「第２の主面」に対応する一具体例である。裏面１１Ｂは、本開示の「第１の主面」に対応する一具体例である。表面１１Ａは、多層配線層３０と対向している。裏面１１Ｂは、中間層４０と対向する面であり、微細な凹凸構造が形成されているとよい。半導体基板１１に入射した赤外光を半導体基板１１の内部に閉じ込めるのに効果的であるからである。なお、表面１１Ａにも同様の微細な凹凸構造が形成されていてもよい。半導体基板１１には、貫通電極１７に対応する箇所に、貫通孔Ｈ１が設けられている。貫通電極１７は、貫通孔Ｈ１内に設けられており、多層配線層３０に接している。貫通孔Ｈ１は、本開示の「第１の貫通孔」に対応する一具体例である。 The semiconductor substrate 11 is, for example, an n-type silicon (Si) substrate including a front surface 11A and a back surface 11B, and has p-wells in a predetermined region. The surface 11A is a specific example corresponding to the "second main surface" of the present disclosure. The back surface 11B is a specific example corresponding to the “first main surface” of the present disclosure. The surface 11A faces the multilayer wiring layer 30. The back surface 11B is a surface facing the intermediate layer 40, and it is preferable that a fine uneven structure is formed. This is because it is effective in confining the infrared light incident on the semiconductor substrate 11 inside the semiconductor substrate 11. A similar fine uneven structure may be formed on the surface 11A. The semiconductor substrate 11 is provided with a through hole H1 at a position corresponding to the through electrode 17. The through electrode 17 is provided in the through hole H1 and is in contact with the multilayer wiring layer 30. The through hole H1 is a specific example corresponding to the "first through hole" of the present disclosure.
　絶縁層１６は、貫通孔Ｈ１を埋め込むとともに裏面１１Ｂを覆うように設けられている。絶縁層１６の、中間層４０側の表面は、平坦面となっている。絶縁層１６は、本開示の「絶縁層」に対応する一具体例である。絶縁層１６は、例えば、酸化シリコン（ＳｉＯx）、窒化シリコン（ＳｉＮx）および酸窒化シリコン（ＳｉＯＮ）等の無機絶縁材料のうちの１種よりなる単層膜か、あるいはこれらのうちの２種以上よりなる積層膜により構成されている。さらに、絶縁層１６を構成する材料として、ポリメチルメタクリレート（ＰＭＭＡ）、ポリビニルフェノール（ＰＶＰ）、ポリビニルアルコール（ＰＶＡ）、ポリイミド、ポリカーボネート（ＰＣ）、ポリエチレンテレフタレート（ＰＥＴ）、ポリスチレン、Ｎ－２（アミノエチル）３－アミノプロピルトリメトキシシラン（ＡＥＡＰＴＭＳ）、３－メルカプトプロピルトリメトキシシラン（ＭＰＴＭＳ）、テトラエトキシシラン（ＴＥＯＳ）、オクタデシルトリクロロシラン（ＯＴＳ）等の有機絶縁材料を用いてもよい。 The insulating layer 16 is provided so as to embed the through hole H1 and cover the back surface 11B. The surface of the insulating layer 16 on the intermediate layer 40 side is a flat surface. The insulating layer 16 is a specific example corresponding to the "insulating layer" of the present disclosure. The insulating layer 16 is a single-layer film made of, for example, one of inorganic insulating materials such as silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiON), or two of them. It is composed of a laminated film composed of seeds or more. Further, as materials constituting the insulating layer 16, polymethylmethacrylate (PMMA), polyvinylphenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, N-2 (amino). Organic insulating materials such as ethyl) 3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS), and octadecyltrichlorosilane (OTS) may be used.
　光電変換領域１２は、例えばＰＩＮ（Positive Intrinsic Negative）型のフォトダイオード（ＰＤ）によって構成される光電変換素子であり、半導体基板１１の所定領域において形成されたｐｎ接合を含んでいる。光電変換領域１２は、赤外光域を含む波長域の光を検出して光電変換を行う。光電変換領域１２は、被写体からの光のうち、特に赤外光域の波長を有する光を検出して受光し、受光量に応じた電荷を光電変換により生成し、蓄積するようになっている。 The photoelectric conversion region 12 is a photoelectric conversion element composed of, for example, a PIN (Positive Intrinsic Negative) type photodiode (PD), and includes a pn junction formed in a predetermined region of the semiconductor substrate 11. The photoelectric conversion region 12 detects light in a wavelength region including an infrared light region and performs photoelectric conversion. The photoelectric conversion region 12 detects and receives light having a wavelength in the infrared light region among the light from the subject, and generates and stores an electric charge according to the amount of received light by photoelectric conversion. ..
　固定電荷層１３は、半導体基板１１の裏面１１Ｂを覆うように設けられている。固定電荷層１３は、半導体基板１１の受光面である裏面１１Ｂの界面準位に起因する暗電流の発生を抑制するため、例えば負の固定電荷を有している。固定電荷層１３が誘起する電界により、半導体基板１１の裏面１１Ｂの近傍にホール蓄積層が形成される。このホール蓄積層によって裏面１１Ｂからの電子の発生が抑制される。固定電荷層１３は、さらに、貫通孔Ｈ１の内面を覆うように設けられていてもよい。固定電荷層１３は、絶縁材料を用いて形成することが好ましい。具体的には、固定電荷層１３の構成材料としては、例えば、酸化ハフニウム（ＨｆＯx）、酸化アルミニウム（ＡｌＯx）、酸化ジルコニウム（ＺｒＯx）、酸化タンタル（ＴａＯx）、酸化チタン（ＴｉＯx）、酸化ランタン（ＬａＯx）、酸化プラセオジム（ＰｒＯx）、酸化セリウム（ＣｅＯx）、酸化ネオジム（ＮｄＯx）、酸化プロメチウム（ＰｍＯx）、酸化サマリウム（ＳｍＯx）、酸化ユウロピウム（ＥｕＯx）、酸化ガドリニウム（ＧｄＯx）、酸化テルビウム（ＴｂＯx）、酸化ジスプロシウム（ＤｙＯx）、酸化ホルミウム（ＨｏＯx）、酸化ツリウム（ＴｍＯx）、酸化イッテルビウム（ＹｂＯx）、酸化ルテチウム（ＬｕＯx）、酸化イットリウム（ＹＯx）、窒化ハフニウム（ＨｆＮx）、窒化アルミニウム（ＡｌＮx）、酸窒化ハフニウム（ＨｆＯxＮy）および酸窒化アルミニウム（ＡｌＯxＮy）等が挙げられる。 The fixed charge layer 13 is provided so as to cover the back surface 11B of the semiconductor substrate 11. The fixed charge layer 13 has, for example, a negative fixed charge in order to suppress the generation of dark current due to the interface state of the back surface 11B, which is the light receiving surface of the semiconductor substrate 11. The electric field induced by the fixed charge layer 13 forms a hole storage layer in the vicinity of the back surface 11B of the semiconductor substrate 11. The hole storage layer suppresses the generation of electrons from the back surface 11B. The fixed charge layer 13 may be further provided so as to cover the inner surface of the through hole H1. The fixed charge layer 13 is preferably formed by using an insulating material. Specifically, examples of the constituent materials of the fixed charge layer 13 include hafnium oxide (HfO x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), tantalum oxide (TaO x ), and titanium oxide (TiO x ). ), Lantern Oxidation (LaO x ), Placeodim Oxidation (PrO x ), Serium Oxidation (CeO x ), Neodim Oxidation (NdO x ), Promethium Oxidation (PmO x ), Samarium Oxide (SmO x ), Europium Oxide (EuO x ) , Gadrinium Oxide (GdO x ), Terbium Oxide (TbO x ), Dysprosium Oxide (DyO x ), Hafnium Oxidation (HoO x ), Thurium Oxide (TmO x ), Itterbium Oxide (YbO x ), Lutethium Oxide (LuO x ), Examples thereof include yttrium oxide (YO x ), hafnium nitride (HfN x ), aluminum nitride (AlN x ), hafnium oxynitride (HfO x N y ) and aluminum nitride (AlO x N y ).
　一対のゲート電極１４Ａ，１４Ｂは、それぞれ転送トランジスタ（ＴＧ）１４１Ａ，１４１Ｂの一部を構成しており、例えば表面１１Ａから光電変換領域１２に至るまでＺ軸方向に延在している。ＴＧ１４１Ａ，ＴＧ１４１Ｂは、ゲート電極１４Ａ，１４Ｂにそれぞれ印加される駆動信号に応じて光電変換領域１２に蓄積されている電荷を一対のＦＤ１５Ａ，１５Ｂに転送するものである。 The pair of gate electrodes 14A and 14B form a part of the transfer transistors (TG) 141A and 141B, respectively, and extend in the Z-axis direction from, for example, the surface 11A to the photoelectric conversion region 12. The TG 141A and TG 141B transfer the electric charge stored in the photoelectric conversion region 12 to the pair of FDs 15A and 15B according to the drive signals applied to the gate electrodes 14A and 14B, respectively.
　一対のＦＤ１５Ａ，１５Ｂは、それぞれ、ゲート電極１４Ａ，１４Ｂを含むＴＧ１４１Ａ，１４１Ｂを介して光電変換領域１２から転送されてきた電荷を電気信号（例えば、電圧信号）に変換して出力する浮遊拡散領域である。ＦＤ１５Ａ，１５Ｂには、後述の図３に示すように、リセットトランジスタ（ＲＳＴ）１４３Ａ，１４３Ｂが接続されるとともに、増幅トランジスタ（ＡＭＰ）１４４Ａ，１４４Ｂおよび選択トランジスタ（ＳＥＬ）１４５Ａ，１４５Ｂを介して垂直信号線Ｌsig（図１）が接続されている。 The pair of FD15A and 15B have a floating diffusion region that converts the electric charge transferred from the photoelectric conversion region 12 via the TG 141A and 141B including the gate electrodes 14A and 14B into an electric signal (for example, a voltage signal) and outputs the charge. Is. As shown in FIG. 3 described later, reset transistors (RST) 143A and 143B are connected to FD15A and 15B, and are vertical via amplification transistors (AMP) 144A and 144B and selection transistors (SEL) 145A and 145B. The signal line Lsig (Fig. 1) is connected.
　なお、貫通電極１７と光電変換領域１２との間に、画素間領域遮光壁が設けられていてもよい。この画素間領域遮光壁は、ＸＹ面内において隣り合う他の画素Ｐとの境界部分に設けられている。画素間領域遮光壁は、例えばＸＺ面に沿って広がる部分とＹＺ面に沿って広がる部分とを含んでおり、各画素Ｐの光電変換領域１２を取り囲むように設けられている。また、画素間領域遮光壁は、貫通電極１７を取り囲むように設けられていてもよい。これにより、隣接する画素Ｐ同士の間における光電変換領域１２への不要光の斜入射を抑制し、混色を防ぐことができる。 A light-shielding wall in the inter-pixel region may be provided between the through electrode 17 and the photoelectric conversion region 12. The inter-pixel region light-shielding wall is provided at a boundary portion with other adjacent pixels P in the XY plane. The inter-pixel region shading wall includes, for example, a portion extending along the XZ plane and a portion extending along the YZ plane, and is provided so as to surround the photoelectric conversion region 12 of each pixel P. Further, the inter-pixel region light-shielding wall may be provided so as to surround the through electrode 17. As a result, oblique incident of unnecessary light on the photoelectric conversion region 12 between adjacent pixels P can be suppressed, and color mixing can be prevented.
　画素間領域遮光壁は、例えば遮光性を有する単体金属、金属合金、金属窒化物、および金属シリサイドのうちの少なくとも１種を含む材料からなる。より具体的には、画素間領域遮光壁の構成材料としては、Ａｌ（アルミニウム），Ｃｕ（銅），Ｃｏ（コバルト），Ｗ（タングステン），Ｔｉ（チタン），Ｔａ（タンタル），Ｎｉ（ニッケル），Ｍｏ（モリブデン），Ｃｒ（クロム），Ｉｒ（イリジウム），白金イリジウム，ＴｉＮ（窒化チタン）またはタングステンシリコン化合物などが挙げられる。なお、画素間領域遮光壁の構成材料は金属材料に限定されず、グラファイトを用いて構成してもよい。また、画素間領域遮光壁は、導電性材料に限定されず、有機材料などの遮光性を有する非導電性材料により構成されていてもよい。また、画素間領域遮光壁と貫通電極１７との間には、例えばＳｉＯｘ（シリコン酸化物）や酸化アルミニウムなどの絶縁材料からなる絶縁層が設けられていてもよい。あるいは、画素間領域遮光壁と貫通電極１７との間に空隙を設けることで、画素間領域遮光壁と貫通電極１７との絶縁を行うようにしてもよい。なお、画素間領域遮光壁が非導電性材料により構成されている場合には絶縁層を設けなくともよい。 The inter-pixel region light-shielding wall is made of, for example, a material containing at least one of a simple substance metal having a light-shielding property, a metal alloy, a metal nitride, and a metal silicide. More specifically, the constituent materials of the interpixel region light-shielding wall include Al (aluminum), Cu (copper), Co (cobalt), W (tungsten), Ti (titanium), Ta (tantal), and Ni (nickel). ), Mo (molybdenum), Cr (chromium), Ir (iridium), platinum iridium, TiN (titanium nitride), tungsten silicon compound and the like. The constituent material of the light-shielding wall in the inter-pixel region is not limited to the metal material, and graphite may be used for the constituent material. Further, the inter-pixel region light-shielding wall is not limited to the conductive material, and may be made of a non-conductive material having light-shielding properties such as an organic material. Further, an insulating layer made of an insulating material such as SiOx (silicon oxide) or aluminum oxide may be provided between the interpixel region light-shielding wall and the through electrode 17. Alternatively, the inter-pixel region light-shielding wall and the through silicon via 17 may be insulated by providing a gap between the inter-pixel region light-shielding wall and the through electrode 17. When the light-shielding wall in the inter-pixel region is made of a non-conductive material, it is not necessary to provide an insulating layer.
　貫通電極１７は、例えば、後述の貫通電極４３とともに、半導体基板１１の裏面１１Ｂ側に設けられた有機光電変換部２０の読出電極２６と、半導体基板１１の表面１１Ａに設けられたＦＤ１３１およびＡＭＰ１３３（後出の図４参照）とを電気的に接続する接続部材である。貫通電極１７，４３は、有機光電変換部２０において生じた信号電荷を、読出電極２６を介して多層配線層３０（ＦＤ１３１およびＡＭＰ１３３）に伝送するように構成されている。貫通電極４３は、本開示の「貫通電極」に対応する一具体例である。貫通電極１７は、例えば、有機光電変換部２０において生じた信号電荷の伝送や、電荷蓄積電極２５を駆動させる電圧の伝送を行う伝送経路となっている。貫通電極１７は、例えば、半導体基板１１を貫いてＺ軸方向に延在するように設けることができる。貫通電極１７は、半導体基板１１の裏面１１Ｂ側に設けられた有機光電変換部２０で生じた信号電荷を、半導体基板１１の表面１１Ａ側に良好に転送することが可能となっている。貫通電極１７の周囲には、固定電荷層１３および絶縁層１６が設けられており、これにより、貫通電極１７と半導体基板１１のｐウェル領域とは電気的に絶縁されている。 The through electrodes 17 include, for example, the through electrodes 43 described later, the read electrodes 26 of the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11, and the FD 131 and AMP 133 provided on the surface 11A of the semiconductor substrate 11. It is a connecting member that electrically connects to (see FIG. 4) described later. Through electrodes 17 and 43 are configured to transmit the signal charge generated in the organic photoelectric conversion unit 20 to the multilayer wiring layer 30 (FD131 and AMP133) via the read electrode 26. The through silicon via 43 is a specific example corresponding to the “through silicon via” of the present disclosure. The through electrode 17 is, for example, a transmission path for transmitting the signal charge generated in the organic photoelectric conversion unit 20 and transmitting the voltage for driving the charge storage electrode 25. The through electrode 17 can be provided, for example, so as to penetrate the semiconductor substrate 11 and extend in the Z-axis direction. The through electrode 17 can satisfactorily transfer the signal charge generated by the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11 to the front surface 11A side of the semiconductor substrate 11. A fixed charge layer 13 and an insulating layer 16 are provided around the through electrode 17, whereby the through electrode 17 and the p-well region of the semiconductor substrate 11 are electrically insulated from each other.
　貫通電極１７は、例えば、ＰＤＡＳ（Phosphorus Doped Amorphous Silicon）等の不純物がドープされたシリコン材料の他、アルミニウム（Ａｌ）、タングステン（Ｗ）、チタン（Ｔｉ）、コバルト（Ｃｏ）、白金（Ｐｔ）、パラジウム（Ｐｄ）、銅（Ｃｕ）、ハフニウム（Ｈｆ）およびタンタル（Ｔａ）等の金属材料のうちの１種または２種以上を用いて形成することができる。 The through electrode 17 is, for example, a silicon material doped with impurities such as PDAS (Phosphorus Doped Amorphous Silicon), aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), platinum (Pt). , Palladium (Pd), Copper (Cu), Hafnium (Hf), Titanium (Ta) and the like, and can be formed by using one or more of metal materials.
（多層配線層３０）
　多層配線層３０は、半導体基板１１の、裏面１１Ｂと対向する表面１１Ａに接して設けられている。多層配線層３０は、例えば、ＴＧ１４１Ａ，１４１Ｂ、ＲＳＴ１４３Ａ，１４３Ｂ、ＡＭＰ１４４Ａ，１４４ＢおよびＳＥＬ１４５Ａ，１４５Ｂ等を有する読み出し回路を含んでいる。 (Multilayer wiring layer 30)
The multilayer wiring layer 30 is provided in contact with the front surface 11A of the semiconductor substrate 11 facing the back surface 11B. The multilayer wiring layer 30 includes a readout circuit having, for example, TG 141A, 141B, RST143A, 143B, AMP 144A, 144B, SEL145A, 145B and the like.
（中間層４０）
　中間層４０は、光学フィルタ４１、絶縁層４２、貫通電極４３、配線層４４および接続部４５を有していてもよい。光学フィルタ４１は、本開示の「光学フィルタ」に対応する一具体例である。 (Middle layer 40)
The intermediate layer 40 may have an optical filter 41, an insulating layer 42, a through electrode 43, a wiring layer 44, and a connecting portion 45. The optical filter 41 is a specific example corresponding to the "optical filter" of the present disclosure.
　光学フィルタ４１は、光電変換領域１２において光電変換が行われる赤外光域（例えば波長８８０ｎｍ以上１０４０ｎｍ以下）に透過バンドを有する。すなわち、光学フィルタ４１は、可視光域（例えば波長４００ｎｍ以上７００ｎｍ以下）の波長を有する光よりも赤外光域の波長を有する光のほうが透過しやすいものである。具体的には、光学フィルタ４１は、絶縁性を有する材料により構成されており、赤外光域の光を選択的に透過させつつ、可視光域の波長の光の少なくとも一部を吸収するようになっている。 The optical filter 41 has a transmission band in an infrared light region (for example, a wavelength of 880 nm or more and 1040 nm or less) in which photoelectric conversion is performed in the photoelectric conversion region 12. That is, the optical filter 41 is more likely to transmit light having a wavelength in the infrared light region than light having a wavelength in the visible light region (for example, a wavelength of 400 nm or more and 700 nm or less). Specifically, the optical filter 41 is made of an insulating material so as to selectively transmit light in the infrared light region and absorb at least a part of light having a wavelength in the visible light region. It has become.
　光学フィルタ４１は、貫通孔Ｈ１と対向する位置に貫通孔Ｈ１ごとに１つずつ設けられた複数の貫通孔Ｈ２を有している。貫通孔Ｈ２は、本開示の「第２の貫通孔」に対応する一具体例である。貫通電極４３は、貫通孔Ｈ２の内面に接している。光学フィルタ４１は、貫通電極４３の側面に接するとともに貫通電極４３の側面を覆うように設けられている。光学フィルタ４１は、ＸＹ面内において隣り合う他の画素Ｐと共有されており、画素部１００全体に渡って形成されている。つまり、画素部１００において、貫通電極４３と光学フィルタ４１との間には隙間が存在しない。従って、光学フィルタ４１は、有機光電変換部２０を透過した可視光域の波長を有する光の光電変換領域１２への入射を抑制し、混色を防ぐものである。光学フィルタ４１は、絶縁層１６の平坦面に接して形成されている。従って、例えば、光学フィルタ４１を、製造過程において絶縁層１６の平坦面上に形成することにより、光学フィルタ４１には膜厚むらがない。 The optical filter 41 has a plurality of through holes H2 provided at positions facing the through holes H1 one by one for each through hole H1. The through hole H2 is a specific example corresponding to the "second through hole" of the present disclosure. The through electrode 43 is in contact with the inner surface of the through hole H2. The optical filter 41 is provided so as to be in contact with the side surface of the through electrode 43 and to cover the side surface of the through electrode 43. The optical filter 41 is shared with other adjacent pixels P in the XY plane, and is formed over the entire pixel portion 100. That is, in the pixel portion 100, there is no gap between the through electrode 43 and the optical filter 41. Therefore, the optical filter 41 suppresses the incident of light having a wavelength in the visible light region transmitted through the organic photoelectric conversion unit 20 into the photoelectric conversion region 12 and prevents color mixing. The optical filter 41 is formed in contact with the flat surface of the insulating layer 16. Therefore, for example, by forming the optical filter 41 on the flat surface of the insulating layer 16 in the manufacturing process, the optical filter 41 has no uneven film thickness.
　絶縁層４２は、光学フィルタ４１の、有機光電変換部２０側の面に接して形成されており、例えば、有機光電変換部２０（例えば、後述の読出電極２６や電荷蓄積電極２５）の形成面を構成している。絶縁層４２は、例えば、酸化シリコン（ＳｉＯx）、窒化シリコン（ＳｉＮx）および酸窒化シリコン（ＳｉＯＮ）等の無機絶縁材料のうちの１種よりなる単層膜か、あるいはこれらのうちの２種以上よりなる積層膜により構成されている。さらに、絶縁層４２を構成する材料として、ポリメチルメタクリレート（ＰＭＭＡ）、ポリビニルフェノール（ＰＶＰ）、ポリビニルアルコール（ＰＶＡ）、ポリイミド、ポリカーボネート（ＰＣ）、ポリエチレンテレフタレート（ＰＥＴ）、ポリスチレン、Ｎ－２（アミノエチル）３－アミノプロピルトリメトキシシラン（ＡＥＡＰＴＭＳ）、３－メルカプトプロピルトリメトキシシラン（ＭＰＴＭＳ）、テトラエトキシシラン（ＴＥＯＳ）、オクタデシルトリクロロシラン（ＯＴＳ）等の有機絶縁材料を用いてもよい。 The insulating layer 42 is formed in contact with the surface of the optical filter 41 on the organic photoelectric conversion unit 20 side. For example, the forming surface of the organic photoelectric conversion unit 20 (for example, the read electrode 26 and the charge storage electrode 25 described later) is formed. Consists of. The insulating layer 42 is a single-layer film made of, for example, one of inorganic insulating materials such as silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiON), or two of them. It is composed of a laminated film composed of seeds or more. Further, as materials constituting the insulating layer 42, polymethylmethacrylate (PMMA), polyvinylphenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, N-2 (amino). Organic insulating materials such as ethyl) 3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS), and octadecyltrichlorosilane (OTS) may be used.
　貫通電極４３は、光学フィルタ４１と同一の層内に設けられており、貫通電極１７の上部に接している。貫通電極４３は、貫通電極１７の直上に設けられていてもよく、この場合には、貫通電極１７と一体に形成されていてもよい。貫通電極４３は、例えば、ＰＤＡＳ（Phosphorus Doped Amorphous Silicon）等の不純物がドープされたシリコン材料の他、アルミニウム（Ａｌ）、タングステン（Ｗ）、チタン（Ｔｉ）、コバルト（Ｃｏ）、白金（Ｐｔ）、パラジウム（Ｐｄ）、銅（Ｃｕ）、ハフニウム（Ｈｆ）およびタンタル（Ｔａ）等の金属材料のうちの１種または２種以上を用いて形成することができる。 The through electrode 43 is provided in the same layer as the optical filter 41, and is in contact with the upper part of the through electrode 17. The through silicon via 43 may be provided directly above the through electrode 17, and in this case, it may be integrally formed with the through electrode 17. The through electrode 43 is, for example, a silicon material doped with impurities such as PDAS (Phosphorus Doped Amorphous Silicon), aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), platinum (Pt). , Palladium (Pd), Copper (Cu), Hafnium (Hf), Titanium (Ta) and the like, and can be formed by using one or more of metal materials.
　貫通電極４３は、例えば、貫通電極１７ともに、半導体基板１１の裏面１１Ｂ側に設けられた有機光電変換部２０の読出電極２６と、半導体基板１１の表面１１Ａに設けられたＦＤ１３１およびＡＭＰ１３３（後出の図４参照）とを電気的に接続する接続部材である。貫通電極１７は、例えば、有機光電変換部２０において生じた信号電荷の伝送や、電荷蓄積電極２５を駆動させる電圧の伝送を行う伝送経路となっている。貫通電極４３は、例えば光学フィルタ４１を貫いてＺ軸方向に延在するように設けることができる。貫通電極４３は、半導体基板１１の裏面１１Ｂ側に設けられた有機光電変換部２０で生じた信号電荷を、半導体基板１１の表面１１Ａ側に良好に転送することが可能となっている。貫通電極４３の周囲には、絶縁性の光学フィルタ４１が設けられており、これにより、互いに隣接する貫通電極４３同士は電気的に絶縁されている。 The through electrodes 43 are, for example, the read electrodes 26 of the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11 together with the through electrodes 17, and the FD 131 and AMP 133 provided on the front surface 11A of the semiconductor substrate 11 (described later). It is a connecting member that electrically connects to (see FIG. 4). The through electrode 17 is, for example, a transmission path for transmitting the signal charge generated in the organic photoelectric conversion unit 20 and transmitting the voltage for driving the charge storage electrode 25. The through silicon via 43 can be provided, for example, so as to penetrate the optical filter 41 and extend in the Z-axis direction. The through electrode 43 can satisfactorily transfer the signal charge generated by the organic photoelectric conversion unit 20 provided on the back surface 11B side of the semiconductor substrate 11 to the front surface 11A side of the semiconductor substrate 11. Insulating optical filters 41 are provided around the through electrodes 43, whereby the through electrodes 43 adjacent to each other are electrically insulated from each other.
　配線層４４および接続部４５は、貫通電極４３と、後述の読出電極２６とを電気的に接続するための部材である。配線層４４および接続部４５は、絶縁層４２内に埋め込まれている。配線層４４および接続部４５は、例えば、銅（Ｃｕ）等の金属材料を用いて形成することができる。 The wiring layer 44 and the connecting portion 45 are members for electrically connecting the through electrode 43 and the reading electrode 26 described later. The wiring layer 44 and the connecting portion 45 are embedded in the insulating layer 42. The wiring layer 44 and the connecting portion 45 can be formed by using, for example, a metal material such as copper (Cu).
（有機光電変換部２０）
　有機光電変換部２０は、光学フィルタ４１と光入射面Ｓｉｎとの間であって、かつ、半導体基板１１の厚さ方向において光電変換部１０と重なる位置に設けられている。有機光電変換部２０は、例えば光電変換部１０に近い位置から順に積層された読出電極２６と、半導体層２１と、有機光電変換層２２と、上部電極２３とを有している。有機光電変換部２０は、さらに、半導体層２１の下方に設けられた絶縁層２４と、その絶縁層２４を介して半導体層２１と対向するように設けられた電荷蓄積電極２５とを有している。電荷蓄積電極２５は、本開示の「電荷蓄積電極」に対応する一具体例である。電荷蓄積電極２５および読出電極２６は、互いに離間されており、例えば同一の階層に設けられている。読出電極２６は、貫通電極１７の上端と接している。なお、上部電極２３、有機光電変換層２２、および半導体層２１は、それぞれ、画素部１００における複数の画素Ｐのうちの一部のいくつかの画素Ｐにおいて共通に設けられ、または画素部１００における複数の画素の全てにおいて共通に設けられていてもよい。本実施の形態以降に説明する他の実施の形態および変形例等においても同様である。 (Organic photoelectric conversion unit 20)
The organic photoelectric conversion unit 20 is provided between the optical filter 41 and the light incident surface Sin and at a position overlapping the photoelectric conversion unit 10 in the thickness direction of the semiconductor substrate 11. The organic photoelectric conversion unit 20 has, for example, a read electrode 26 stacked in order from a position closest to the photoelectric conversion unit 10, a semiconductor layer 21, an organic photoelectric conversion layer 22, and an upper electrode 23. The organic photoelectric conversion unit 20 further has an insulating layer 24 provided below the semiconductor layer 21 and a charge storage electrode 25 provided so as to face the semiconductor layer 21 via the insulating layer 24. There is. The charge storage electrode 25 is a specific example corresponding to the “charge storage electrode” of the present disclosure. The charge storage electrode 25 and the read electrode 26 are separated from each other, and are provided, for example, in the same layer. The read electrode 26 is in contact with the upper end of the through electrode 17. The upper electrode 23, the organic photoelectric conversion layer 22, and the semiconductor layer 21 are each provided in common in some pixels P of some of the plurality of pixels P in the pixel unit 100, or in the pixel unit 100. It may be provided in common in all of a plurality of pixels. The same applies to the other embodiments and modifications described after this embodiment.
　なお、有機光電変換層２２と半導体層２１との間および有機光電変換層２２と上部電極２３との間には、他の有機層が設けられていてもよい。 It should be noted that another organic layer may be provided between the organic photoelectric conversion layer 22 and the semiconductor layer 21 and between the organic photoelectric conversion layer 22 and the upper electrode 23.
　読出電極２６、上部電極２３および電荷蓄積電極２５は、光透過性を有する導電膜により構成され、例えば、ＩＴＯ（インジウム錫酸化物）により構成されている。但し、読出電極２６、上部電極２３および電荷蓄積電極２５の構成材料としては、このＩＴＯの他にも、ドーパントを添加した酸化スズ（ＳｎＯx）系材料、あるいは亜鉛酸化物（ＺｎＯ）にドーパントを添加してなる酸化亜鉛系材料を用いてもよい。酸化亜鉛系材料としては、例えば、ドーパントとしてアルミニウム（Ａｌ）を添加したアルミニウム亜鉛酸化物（ＡＺＯ）、ガリウム（Ｇａ）添加のガリウム亜鉛酸化物（ＧＺＯ）、インジウム（Ｉｎ）添加のインジウム亜鉛酸化物（ＩＺＯ）が挙げられる。また、読出電極２６、上部電極２３および電荷蓄積電極２５の構成材料としては、ＣｕＩ、ＩｎＳｂＯ4 、ＺｎＭｇＯ、ＣｕＩｎＯ2 、ＭｇＩＮ2 Ｏ4 、ＣｄＯ、ＺｎＳｎＯ3 またはＴｉＯ2 等を用いてもよい。さらに、スピネル形酸化物やＹｂＦｅ2 Ｏ4 構造を有する酸化物を用いてもよい。 The read electrode 26, the upper electrode 23, and the charge storage electrode 25 are made of a light conductive conductive film, and are made of, for example, ITO (indium tin oxide). However, as the constituent materials of the read electrode 26, the upper electrode 23, and the charge storage electrode 25, in addition to this ITO, a dopant is added to tin oxide (SnOx) -based material to which a dopant is added, or zinc oxide (ZnO). A zinc oxide-based material obtained from the above may be used. Examples of the zinc oxide-based material include aluminum zinc oxide (AZO) to which aluminum (Al) is added as a dopant, gallium zinc oxide (GZO) to which gallium (Ga) is added, and indium zinc oxide to which indium (In) is added. (IZO) can be mentioned. Further, as the constituent materials of the read electrode 26, the upper electrode 23 and the charge storage electrode 25, CuI, InSbO 4 , ZnMgO, CuInO 2 , MgIN 2O 4 , CdO, ZnSnO 3 or TiO 2 may be used. Further, a spinel-type oxide or an oxide having a YbFe 2 O 4 structure may be used.
　有機光電変換層２２は、光エネルギーを電気エネルギーに変換するものであり、例えば、ｐ型半導体およびｎ型半導体として機能する有機材料を２種以上含んで形成されている。ｐ型半導体は、相対的に電子供与体（ドナー）として機能するものであり、ｎ型半導体は、相対的に電子受容体（アクセプタ）として機能するｎ型半導体として機能するものである。有機光電変換層２２は、層内に、バルクヘテロ接合構造を有している。バルクヘテロ接合構造は、ｐ型半導体およびｎ型半導体が混ざり合うことで形成されたｐ／ｎ接合面であり、光を吸収した際に生じる励起子は、このｐ／ｎ接合界面において電子と正孔とに分離する。 The organic photoelectric conversion layer 22 converts light energy into electrical energy, and is formed, for example, containing two or more kinds of organic materials that function as p-type semiconductors and n-type semiconductors. The p-type semiconductor functions as a relatively electron donor (donor), and the n-type semiconductor functions as an n-type semiconductor that relatively functions as an electron acceptor (acceptor). The organic photoelectric conversion layer 22 has a bulk heterojunction structure in the layer. The bulk heterojunction structure is a p / n junction surface formed by mixing p-type semiconductors and n-type semiconductors, and excitons generated when light is absorbed are electrons and holes at the p / n junction interface. Separate into and.
　有機光電変換層２２は、ｐ型半導体およびｎ型半導体の他に、さらに、所定の波長帯域の光を光電変換する一方、他の波長帯域の光を透過させる、いわゆる色素材料の３種類を含んで構成されていてもよい。ｐ型半導体、ｎ型半導体および色素材料は、互いに異なる吸収極大波長を有していることが好ましい。これにより、可視光領域の波長を広い範囲で吸収することが可能となる。 In addition to the p-type semiconductor and the n-type semiconductor, the organic photoelectric conversion layer 22 further includes three types of so-called dye materials that photoelectrically convert light in a predetermined wavelength band while transmitting light in another wavelength band. It may be composed of. It is preferable that the p-type semiconductor, the n-type semiconductor and the dye material have different absorption maximum wavelengths from each other. This makes it possible to absorb wavelengths in the visible light region in a wide range.
　有機光電変換層２２は、例えば、上記各種有機半導体材料を混合し、スピンコート技術を用いることで形成することができる。この他、例えば、真空蒸着法やプリント技術等を用いて有機光電変換層２２を形成するようにしてもよい。 The organic photoelectric conversion layer 22 can be formed, for example, by mixing the above-mentioned various organic semiconductor materials and using a spin coating technique. In addition, for example, the organic photoelectric conversion layer 22 may be formed by using a vacuum vapor deposition method, a printing technique, or the like.
　半導体層２１を構成する材料としては、バンドギャップの値が大きく（例えば、３．０ｅＶ以上のバンドギャップの値）、有機光電変換層２２を構成する材料よりも高い移動度を有する材料を用いることが好ましい。具体的には、ＩＧＺＯ等の酸化物半導体材料；遷移金属ダイカルコゲナイド；シリコンカーバイド；ダイヤモンド；グラフェン；カーボンナノチューブ；縮合多環炭化水素化合物や縮合複素環化合物等の有機半導体材料を挙げることができる。 As the material constituting the semiconductor layer 21, a material having a large bandgap value (for example, a bandgap value of 3.0 eV or more) and having a higher mobility than the material constituting the organic photoelectric conversion layer 22 is used. Is preferable. Specific examples thereof include oxide semiconductor materials such as IGZO; transition metal dichalcogenides; silicon carbide; diamond; graphene; carbon nanotubes; and organic semiconductor materials such as condensed polycyclic hydrocarbon compounds and condensed heterocyclic compounds.
　電荷蓄積電極２５は、絶縁層２４および半導体層２１と共に一種のキャパシタを形成し、有機光電変換層２２において発生する電荷を半導体層２１の一部、例えば半導体層２１のうち絶縁層２４を介して電荷蓄積電極２５に対応した領域部分に蓄積するようになっている。本実施の形態では、一の光電変換領域１２、一のカラーフィルタ５２、および一のオンチップレンズ５４のそれぞれに対応して、一の電荷蓄積電極２５が設けられている。電荷蓄積電極２５は、例えば垂直駆動回路１１１と接続されている。 The charge storage electrode 25 forms a kind of capacitor together with the insulating layer 24 and the semiconductor layer 21, and the charge generated in the organic photoelectric conversion layer 22 is transmitted through a part of the semiconductor layer 21, for example, the insulating layer 24 of the semiconductor layer 21. It is designed to accumulate in the region corresponding to the charge storage electrode 25. In this embodiment, one charge storage electrode 25 is provided corresponding to each of one photoelectric conversion region 12, one color filter 52, and one on-chip lens 54. The charge storage electrode 25 is connected to, for example, a vertical drive circuit 111.
　絶縁層２４は、例えば、ＡｌＯｘなどによって形成されている。絶縁層２４は、半導体層２１が半導体層２１の、電荷蓄積電極２５側に設けられた層に直接、接するのを防止する。絶縁層２４は、例えば、半導体層２１と、絶縁層４２、光学フィルタ４１および電荷蓄積電極２５との間に設けられており、半導体層２１が絶縁層４２、光学フィルタ４１および電荷蓄積電極２５に直接、接するのを防止する。 The insulating layer 24 is formed of, for example, AlOx or the like. The insulating layer 24 prevents the semiconductor layer 21 from directly contacting the layer of the semiconductor layer 21 provided on the charge storage electrode 25 side. The insulating layer 24 is provided between, for example, the semiconductor layer 21, the insulating layer 42, the optical filter 41, and the charge storage electrode 25, and the semiconductor layer 21 is provided on the insulating layer 42, the optical filter 41, and the charge storage electrode 25. Prevent direct contact.
　有機光電変換部２０は、上記のように、可視光域の波長の一部または全部を検出するものである。また、有機光電変換部２０は、赤外光域に対する感度を有さないものであることが望ましい。 As described above, the organic photoelectric conversion unit 20 detects a part or all of the wavelengths in the visible light region. Further, it is desirable that the organic photoelectric conversion unit 20 has no sensitivity to the infrared light region.
　有機光電変換部２０は、貫通電極１７，４３の直上に設けられた読出電極２６、半導体層２１、有機光電変換層２２および上部電極２３が光電変換部１０側からこの順に積層された積層構造を有している。有機光電変換部２０は、さらに、所定の間隙（絶縁層２４）を介して半導体層２１と対向する位置に電荷蓄積電極２５を有している。読出電極２６は、本開示の「第１の電極」に対応する一具体例である。半導体層２１は、本開示の「半導体層」に対応する一具体例である。有機光電変換層２２は、本開示の「光電変換層」に対応する一具体例である。上部電極２３は、本開示の「第２の電極」に対応する一具体例である。 The organic photoelectric conversion unit 20 has a laminated structure in which a read electrode 26, a semiconductor layer 21, an organic photoelectric conversion layer 22 and an upper electrode 23 provided directly above the through electrodes 17 and 43 are laminated in this order from the photoelectric conversion unit 10 side. Have. The organic photoelectric conversion unit 20 further has a charge storage electrode 25 at a position facing the semiconductor layer 21 via a predetermined gap (insulation layer 24). The read electrode 26 is a specific example corresponding to the “first electrode” of the present disclosure. The semiconductor layer 21 is a specific example corresponding to the “semiconductor layer” of the present disclosure. The organic photoelectric conversion layer 22 is a specific example corresponding to the “photoelectric conversion layer” of the present disclosure. The upper electrode 23 is a specific example corresponding to the “second electrode” of the present disclosure.
　有機光電変換部２０では、上部電極２３側から入射した光は、有機光電変換層２２で吸収される。これによって生じた励起子（電子－正孔対）は、有機光電変換層２２を構成する電子供与体と電子受容体との界面に移動し、励起子分離、すなわち、電子と正孔とに解離する。ここで発生した電荷、すなわち電子および正孔は、キャリアの濃度差による拡散や、上部電極２３と電荷蓄積電極２５との電位差による内部電界によって上部電極２３または半導体層２１に移動し、光電流として検出される。例えば、読出電極２６を正の電位とし、上部電極２３を負の電位とする。その場合、有機光電変換層２２における光電変換により発生した正孔は、上部電極２３に移動する。有機光電変換層２２における光電変換により発生した電子は、電荷蓄積電極２５に引き付けられ、半導体層２１の一部、例えば半導体層２１のうち絶縁層２４を介して電荷蓄積電極２５に対応した領域部分に蓄積される。有機光電変換層２２は、可視光域を含む波長域の光を検出して光電変換を行う。 In the organic photoelectric conversion unit 20, the light incident from the upper electrode 23 side is absorbed by the organic photoelectric conversion layer 22. The excitons (electron-hole pairs) generated by this move to the interface between the electron donor and the electron acceptor constituting the organic photoelectric conversion layer 22, and exciton separation, that is, dissociation into electrons and holes. do. The charges generated here, that is, electrons and holes, move to the upper electrode 23 or the semiconductor layer 21 due to diffusion due to the difference in carrier concentration or the internal electric field due to the potential difference between the upper electrode 23 and the charge storage electrode 25, and are used as a photocurrent. Detected. For example, the read electrode 26 has a positive potential and the upper electrode 23 has a negative potential. In that case, the holes generated by the photoelectric conversion in the organic photoelectric conversion layer 22 move to the upper electrode 23. The electrons generated by the photoelectric conversion in the organic photoelectric conversion layer 22 are attracted to the charge storage electrode 25, and a part of the semiconductor layer 21, for example, a region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24. Accumulate in. The organic photoelectric conversion layer 22 detects light in a wavelength region including a visible light region and performs photoelectric conversion.
　半導体層２１のうち絶縁層２４を介して電荷蓄積電極２５に対応した領域部分に蓄積された電荷（例えば電子）は、次のようにして読み出される。具体的には、読出電極２６に電位Ｖ２６を印加し、電荷蓄積電極２５に電位Ｖ２５を印加する。ここで、電位Ｖ２５よりも電位Ｖ２６を高くする（Ｖ２５＜Ｖ２６）。こうすることで、半導体層２１のうち電荷蓄積電極２５に対応した領域部分に蓄積されていた電子は、読出電極２６へ転送される。 The charge (for example, an electron) accumulated in the region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24 is read out as follows. Specifically, the potential V26 is applied to the read electrode 26, and the potential V25 is applied to the charge storage electrode 25. Here, the potential V26 is made higher than the potential V25 (V25 <V26). By doing so, the electrons accumulated in the region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 are transferred to the read electrode 26.
　このように有機光電変換層２２の下層に半導体層２１を設け、半導体層２１のうちの絶縁層２４を介して電荷蓄積電極２５に対応した領域部分に電荷（例えば電子）を蓄積することにより、以下のような効果が得られる。すなわち、半導体層２１を設けずに有機光電変換層２２に電荷（例えば電子）を蓄積する場合と比較して、電荷蓄積時の正孔と電子との再結合が防止され、蓄積した電荷（例えば電子）の読出電極２６への転送効率を増加させることができるうえ、暗電流の生成を抑制することができる。上記説明では電子の読み出しを行う場合を例示したが、正孔の読み出しを行うようにしてもよい。正孔の読み出しを行う場合は、上記説明での電位は正孔が感じる電位として説明される。 By providing the semiconductor layer 21 under the organic photoelectric conversion layer 22 in this way and accumulating charges (for example, electrons) in the region corresponding to the charge storage electrode 25 via the insulating layer 24 of the semiconductor layer 21. The following effects can be obtained. That is, as compared with the case where charges (for example, electrons) are accumulated in the organic photoelectric conversion layer 22 without providing the semiconductor layer 21, recombination of holes and electrons at the time of charge accumulation is prevented, and the accumulated charges (for example) are prevented. The transfer efficiency of electrons) to the read electrode 26 can be increased, and the generation of dark current can be suppressed. In the above description, the case of reading out electrons has been illustrated, but holes may be read out. When reading holes, the potential in the above description is described as the potential felt by the holes.
（光電変換部１０の読み出し回路）
　図３は、図２に示した画素Ｐを構成する光電変換部１０の読み出し回路の一例を表す回路図である。 (Read circuit of photoelectric conversion unit 10)
FIG. 3 is a circuit diagram showing an example of a readout circuit of the photoelectric conversion unit 10 constituting the pixel P shown in FIG. 2.
　光電変換部１０の読み出し回路は、例えば、ＴＧ１４１Ａ，１４１Ｂと、ＯＦＧ１４６と、ＦＤ１５Ａ，１５Ｂと、ＲＳＴ１４３Ａ，１４３Ｂと、ＡＭＰ１４４Ａ，１４４Ｂと、ＳＥＬ１４５Ａ，１４５Ｂとを有している。 The readout circuit of the photoelectric conversion unit 10 has, for example, TG141A, 141B, OFG146, FD15A, 15B, RST143A, 143B, AMP144A, 144B, and SEL145A, 145B.
　ＴＧ１４１Ａ，１４１Ｂは、光電変換領域１２とＦＤ１５Ａ，１５Ｂとの間に接続されている。ＴＧ１４１Ａ，１４１Ｂのゲート電極１４Ａ，１４Ｂに駆動信号が印加され、ＴＧ１４１Ａ，１４１Ｂがアクティブ状態となると、ＴＧ１４１Ａ，１４１Ｂの転送ゲートが導通状態となる。その結果、光電変換領域１２で変換された信号電荷が、ＴＧ１４１Ａ，１４１Ｂを介してＦＤ１５Ａ，１５Ｂに転送される。 The TG 141A and 141B are connected between the photoelectric conversion region 12 and the FD 15A and 15B. When a drive signal is applied to the gate electrodes 14A and 14B of the TGs 141A and 141B and the TGs 141A and 141B become active, the transfer gates of the TGs 141A and 141B become conductive. As a result, the signal charge converted in the photoelectric conversion region 12 is transferred to the FDs 15A and 15B via the TGs 141A and 141B.
　ＯＦＧ１４６は、光電変換領域１２と電源との間に接続されている。ＯＦＧ１４６のゲート電極に駆動信号が印加され、ＯＦＧ１４６がアクティブ状態になると、ＯＦＧ１４６が導通状態になる。その結果、光電変換領域１２で変換された信号電荷がＯＦＧ１４６を介して電源に排出される。 OFG146 is connected between the photoelectric conversion region 12 and the power supply. When a drive signal is applied to the gate electrode of the OFG146 and the OFG146 becomes active, the OFG146 becomes conductive. As a result, the signal charge converted in the photoelectric conversion region 12 is discharged to the power supply via the OFG 146.
　ＦＤ１５Ａ，１５Ｂは、ＴＧ１４１Ａ，１４１Ｂと、ＡＭＰ１４４Ａ，１４４Ｂとの間に接続されている。ＦＤ１５Ａ，１５Ｂは、ＴＧ１４１Ａ，１４１Ｂにより転送される信号電荷を電圧信号に電荷電圧変換して、ＡＭＰ１４４Ａ，１４４Ｂに出力する。 FD15A, 15B are connected between TG141A, 141B and AMP144A, 144B. The FD15A and 15B convert the signal charge transferred by the TG 141A and 141B into a voltage signal and output it to the AMP 144A and 144B.
　ＲＳＴ１４３Ａ，１４３Ｂは、ＦＤ１５Ａ，１５Ｂと電源との間に接続されている。ＲＳＴ１４３Ａ，１４３Ｂのゲート電極に駆動信号が印加され、ＲＳＴ１４３Ａ，１４３Ｂがアクティブ状態になると、ＲＳＴ１４３Ａ，１４３Ｂのリセットゲートが導通状態となる。その結果、ＦＤ１５Ａ，１５Ｂの電位が電源のレベルにリセットされる。 RST143A, 143B is connected between FD15A, 15B and a power supply. When a drive signal is applied to the gate electrodes of RST143A and 143B and RST143A and 143B are in the active state, the reset gates of RST143A and 143B are in the conductive state. As a result, the potentials of FD15A and 15B are reset to the level of the power supply.
　ＡＭＰ１４４Ａ，１４４Ｂは、ＦＤ１５Ａ，１５Ｂに接続されるゲート電極と、電源に接続されるドレイン電極とをそれぞれ有している。ＡＭＰ１４４Ａ，１４４Ｂは、ＦＤ１５Ａ，１５Ｂが保持している電圧信号の読み出し回路、いわゆるソースフォロア回路の入力部となる。すなわち、ＡＭＰ１４４Ａ，１４４Ｂは、そのソース電極がＳＥＬ１４５Ａ，１４５Ｂを介してそれぞれ垂直信号線Ｌｓｉｇに接続されることで、垂直信号線Ｌｓｉｇの一端に接続される定電流源とソースフォロア回路を構成する。 The AMP 144A and 144B have a gate electrode connected to the FD15A and 15B and a drain electrode connected to the power supply, respectively. The AMP 144A and 144B are input units of a voltage signal reading circuit held by the FDs 15A and 15B, a so-called source follower circuit. That is, the source electrodes of the AMPs 144A and 144B are connected to the vertical signal line Lsig via the SEL145A and 145B, respectively, thereby forming a constant current source and a source follower circuit connected to one end of the vertical signal line Lsig.
　ＳＥＬ１４５Ａ，１４５Ｂは、それぞれ、ＡＭＰ１４４Ａ，１４４Ｂのソース電極と、垂直信号線Ｌｓｉｇとの間に接続される。ＳＥＬ１４５Ａ，１４５Ｂの各ゲート電極に駆動信号が印加され、ＳＥＬ１４５Ａ，１４５Ｂがアクティブ状態になると、ＳＥＬ１４５Ａ，１４５Ｂが導通状態となり、画素Ｐが選択状態となる。これにより、ＡＭＰ１４４Ａ，１４４Ｂから出力される読み出し信号（画素信号）が、ＳＥＬ１４５Ａ，１４５Ｂを介して、垂直信号線Ｌｓｉｇに出力される。 The SEL145A and 145B are connected between the source electrodes of the AMP 144A and 144B and the vertical signal line Lsig, respectively. When a drive signal is applied to each gate electrode of the SEL145A and 145B and the SEL145A and 145B are in the active state, the SEL145A and 145B are in the conduction state and the pixel P is in the selection state. As a result, the read signal (pixel signal) output from the AMP 144A and 144B is output to the vertical signal line Lsig via the SEL145A and 145B.
　固体撮像装置１では、赤外域の光パルスを被写体に照射し、その被写体から反射した光パルスを光電変換部１０の光電変換領域１２で受光する。光電変換領域１２では、赤外域の光パルスの入射により複数の電荷が発生する。光電変換領域１２において発生した複数の電荷は、一対のゲート電極１４Ａ，１４Ｂに対して交互に等時間に亘って駆動信号を供給することで、ＦＤ１５ＡとＦＤ１５Ｂとに交互に振り分けられるようになっている。ゲート電極１４Ａ，１４Ｂに印加する駆動信号のシャッタ位相を照射する光パルスに対して変えることで、ＦＤ１５Ａにおける電荷の蓄積量およびＦＤ１５Ｂにおける電荷の蓄積量は、位相変調された値となる。これらを復調することによって光パルスの往復時間が推定されることから、固体撮像装置１と被写体との距離が求められる。 The solid-state image sensor 1 irradiates a subject with an optical pulse in the infrared region, and receives the light pulse reflected from the subject in the photoelectric conversion region 12 of the photoelectric conversion unit 10. In the photoelectric conversion region 12, a plurality of charges are generated by the incident light pulse in the infrared region. The plurality of charges generated in the photoelectric conversion region 12 are alternately distributed to the FD15A and the FD15B by alternately supplying the drive signals to the pair of gate electrodes 14A and 14B over an equal time period. There is. By changing the shutter phase of the drive signal applied to the gate electrodes 14A and 14B with respect to the irradiating optical pulse, the charge accumulation amount in the FD15A and the charge accumulation amount in the FD15B become phase-modulated values. Since the round-trip time of the optical pulse is estimated by demodulating these, the distance between the solid-state image sensor 1 and the subject can be obtained.
（有機光電変換部２０の読み出し回路）
　図４は、図２に示した画素Ｐ１を構成する有機光電変換部２０の読み出し回路の一例を表す回路図である。 (Read circuit of organic photoelectric conversion unit 20)
FIG. 4 is a circuit diagram showing an example of a readout circuit of the organic photoelectric conversion unit 20 constituting the pixel P1 shown in FIG.
　有機光電変換部２０の読み出し回路は、例えば、ＦＤ１３１と、ＲＳＴ１３２と、ＡＭＰ１３３と、ＳＥＬ１３４とを有している。 The readout circuit of the organic photoelectric conversion unit 20 has, for example, FD131, RST132, AMP133, and SEL134.
　ＦＤ１３１は、読出電極２６とＡＭＰ１３３との間に接続されている。ＦＤ１３１は、読出電極２６により転送される信号電荷を電圧信号に電荷電圧変換して、ＡＭＰ１３３に出力する。 The FD 131 is connected between the read electrode 26 and the AMP 133. The FD 131 converts the signal charge transferred by the read electrode 26 into a voltage signal and outputs it to the AMP 133.
　ＲＳＴ１３２は、ＦＤ１３１と電源との間に接続されている。ＲＳＴ１３２のゲート電極に駆動信号が印加され、ＲＳＴ１３２がアクティブ状態になると、ＲＳＴ１３２のリセットゲートが導通状態となる。その結果、ＦＤ１３１の電位が電源のレベルにリセットされる。 The RST132 is connected between the FD131 and the power supply. When a drive signal is applied to the gate electrode of the RST 132 and the RST 132 becomes active, the reset gate of the RST 132 becomes conductive. As a result, the potential of the FD 131 is reset to the level of the power supply.
　ＡＭＰ１３３は、ＦＤ１３１に接続されるゲート電極と、電源に接続されるドレイン電極とを有している。ＡＭＰ１３３のソース電極は、ＳＥＬ１３４を介して垂直信号線Ｌｓｉｇに接続されている。 The AMP 133 has a gate electrode connected to the FD 131 and a drain electrode connected to the power supply. The source electrode of the AMP 133 is connected to the vertical signal line Lsig via the SEL134.
　ＳＥＬ１３４は、ＡＭＰ１３３のソース電極と、垂直信号線Ｌｓｉｇとの間に接続される。ＳＥＬ１３４のゲート電極に駆動信号が印加され、ＳＥＬ１３４がアクティブ状態になると、ＳＥＬ１３４が導通状態となり、画素Ｐ１が選択状態となる。これにより、ＡＭＰ１３３から出力される読み出し信号（画素信号）が、ＳＥＬ１３４を介して、垂直信号線Ｌｓｉｇに出力される。 The SEL134 is connected between the source electrode of the AMP 133 and the vertical signal line Lsig. When a drive signal is applied to the gate electrode of the SEL 134 and the SEL 134 becomes active, the SEL 134 becomes a conductive state and the pixel P1 becomes a selected state. As a result, the read signal (pixel signal) output from the AMP 133 is output to the vertical signal line Lsig via the SEL134.
（画素Ｐ１の平面構成例）
　図５（Ａ）～（Ｃ）、図６（Ａ），（Ｂ）は、画素部１００における複数の画素Ｐ１の配列状態の一例を模式的に表している。図５（Ａ）～（Ｃ）は、それぞれ、図２に示したＺ軸方向のレベルＬｖ1～Ｌｖ３に相当する高さ位置での配列状態を表している。図６（Ａ），（Ｂ）は、それぞれ、図２に示したＺ軸方向のレベルＬｖ４，Ｌｖ５に相当する高さ位置での配列状態を表している。すなわち、図５（Ａ）はＸＹ面内におけるオンチップレンズ５４の配列状態を表し、図５（Ｂ）はＸＹ面内におけるカラーフィルタ５２の配列状態を表し、図５（Ｃ）はＸＹ面内における電荷蓄積電極２５および読出電極２６の配列状態を表し、図６（Ａ）はＸＹ面内における貫通電極４３および貫通孔Ｈ２の配列状態を表し、図６（Ｂ）はＸＹ面内における光電変換領域１２、貫通電極１７および貫通孔Ｈ１の配列状態を表している。 (Example of planar configuration of pixel P1)
5 (A) to 5 (C) and FIGS. 6 (A) and 6 (B) schematically show an example of the arrangement state of a plurality of pixels P1 in the pixel unit 100. 5 (A) to 5 (C) show the arrangement state at the height position corresponding to the levels Lv1 to Lv3 in the Z-axis direction shown in FIG. 2, respectively. 6 (A) and 6 (B) show the arrangement state at the height position corresponding to the levels Lv4 and Lv5 in the Z-axis direction shown in FIG. 2, respectively. That is, FIG. 5A shows the arrangement state of the on-chip lenses 54 in the XY plane, FIG. 5B shows the arrangement state of the color filter 52 in the XY plane, and FIG. 5C shows the arrangement state in the XY plane. 6 (A) shows the arrangement state of the through electrode 43 and the through hole H2 in the XY plane, and FIG. 6 (B) shows the photoelectric conversion in the XY plane. It shows the arrangement state of the region 12, the through electrode 17, and the through hole H1.
　図５（Ａ）～（Ｃ）、図６（Ａ），（Ｂ）に示したように、画素部１００では、１つのオンチップレンズ５４と、１つのカラーフィルタ５２と、１つの電荷蓄積電極２５と、１つの光電変換領域１２とがＺ軸方向において互いに対応する位置に設けられている。ここでいう互いに対応する位置とは、例えば、Ｚ軸方向において互いに重なり合う位置である。あるいは、それに限定されず、１つのオンチップレンズ５４に入射した光が、１つのカラーフィルタ５２と、複数の画素Ｐ１に共通に設けられた有機光電変換部２０と、１つの光電変換領域１２とに順次入射し、有機光電変換部２０において光電変換により発生した電荷が１つの電荷蓄積電極２５に引き付けられて半導体層２１の一部、すなわち、絶縁層２４を介して電荷蓄積電極２５に対応した領域部分に蓄積されるようになっていればよい。また、１つのオンチップレンズ５４と、１つのカラーフィルタ５２と、１つの電荷蓄積電極２５と、１つの光電変換領域１２とがＺ軸方向において互いに重なり合う位置にある場合、各々の中心位置が互いに一致していてもよいし、各々の中心位置が互いに一致していなくともよい。なお、図５（Ａ）～（Ｃ）、図６（Ａ），（Ｂ）では、Ｘ軸方向およびＹ軸方向にそれぞれ４つずつ並ぶ合計１６個の画素Ｐ１の平面構成例を示しているが、画素部１００では、例えばこれら１６個の画素Ｐ１がＸ軸方向およびＹ軸方向の双方において複数配置されている。 As shown in FIGS. 5 (A) to 5 (C) and FIGS. 6 (A) and 6 (B), in the pixel unit 100, one on-chip lens 54, one color filter 52, and one charge storage electrode The 25 and one photoelectric conversion region 12 are provided at positions corresponding to each other in the Z-axis direction. The positions corresponding to each other here are, for example, positions that overlap each other in the Z-axis direction. Alternatively, not limited to this, the light incident on one on-chip lens 54 includes one color filter 52, an organic photoelectric conversion unit 20 commonly provided in a plurality of pixels P1, and one photoelectric conversion region 12. The charge generated by the photoelectric conversion in the organic photoelectric conversion unit 20 is attracted to one charge storage electrode 25, and corresponds to a part of the semiconductor layer 21, that is, the charge storage electrode 25 via the insulating layer 24. It suffices if it is accumulated in the area part. Further, when one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are in positions where they overlap each other in the Z-axis direction, their center positions are mutual. They may or may not match each other at their center positions. Note that FIGS. 5 (A) to 5 (C) and FIGS. 6 (A) and 6 (B) show a plan configuration example of a total of 16 pixels P1 arranged four by each in the X-axis direction and the Y-axis direction. However, in the pixel unit 100, for example, a plurality of these 16 pixels P1 are arranged in both the X-axis direction and the Y-axis direction.
　例えば、図５（Ｂ）に示したように、赤色のカラーフィルタ５２Ｒを有し赤色光を受光する１つの赤色画素ＰＲ１と、青色のカラーフィルタ５２Ｂを有し青色光を受光する１つの青色画素ＰＢ１と、緑色のカラーフィルタ５２Ｇを有し緑色光を受光する２つの緑色画素ＰＧ１とが、１つの画素群ＰＰ１を構成している。図５（Ｂ）に示した複数の画素Ｐの配列状態は、いわゆるベイヤ配列と呼ばれる。赤色画素ＰＲ１は、Ｘ軸方向およびＹ軸方向にそれぞれ１つ置きに配列されている。青色画素ＰＢ１は、Ｘ軸方向およびＹ軸方向にそれぞれ１つ置きに配列されると共に赤色画素ＰＲ１に対し斜め方向に位置している。緑色画素ＰＧ１は、赤色画素ＰＲ１および青色画素ＰＢ１の隙間を埋めるように配置されている。なお、図５（Ｂ）は一例であり、本開示の画素部１００における複数の画素Ｐ１の配列状態はこれに限定されるものではない。 For example, as shown in FIG. 5B, one red pixel PR1 having a red color filter 52R and receiving red light, and one blue pixel having a blue color filter 52B and receiving blue light. The PB1 and the two green pixels PG1 having the green color filter 52G and receiving the green light constitute one pixel group PP1. The arrangement state of the plurality of pixels P shown in FIG. 5B is a so-called bayer arrangement. The red pixels PR1 are arranged every other in the X-axis direction and the Y-axis direction. The blue pixels PB1 are arranged every other in the X-axis direction and the Y-axis direction, and are located diagonally with respect to the red pixel PR1. The green pixel PG1 is arranged so as to fill the gap between the red pixel PR1 and the blue pixel PB1. Note that FIG. 5B is an example, and the arrangement state of the plurality of pixels P1 in the pixel unit 100 of the present disclosure is not limited to this.
　例えば、図５（Ｃ）に示したように、読出電極２６は、１つの画素Ｐにつき１つの割合で設けられている。具体的には、１つの画素群ＰＰ１における４つの電荷蓄積電極２５の周辺付近に４つの読出電極２６が配置されている。なお、図５（Ｃ）は一例であり、本開示の画素部１００における読出電極２６の配置位置はこれに限定されるものではない。 For example, as shown in FIG. 5C, the read electrode 26 is provided at a ratio of one to one pixel P. Specifically, four read electrodes 26 are arranged near the periphery of the four charge storage electrodes 25 in one pixel group PP1. Note that FIG. 5C is an example, and the arrangement position of the read electrode 26 in the pixel portion 100 of the present disclosure is not limited to this.
　例えば、図６（Ａ），（Ｂ）に示したように、貫通電極１７，４３は、１つの画素Ｐにつき１つの割合で設けられている。具体的には、１つの画素群ＰＰ１における４つの電荷蓄積電極２５の周辺付近に４つの貫通電極１７および４つの貫通電極４３が配置されている。このとき、光学フィルタ４１には複数の貫通孔Ｈ２が設けられており、複数の貫通電極４３が貫通孔Ｈ２ごとに１つずつ設けられており、貫通孔Ｈ２の内面に隙間なく接している。複数の貫通電極４３（さらに複数の貫通孔Ｈ２）は、貫通孔Ｈ１と対向する位置に貫通孔Ｈ２ごとに１つずつ設けられている。また、半導体基板１１には、複数の貫通孔Ｈ１が設けられており、複数の貫通電極１７は、貫通孔Ｈ１ごとに１つずつ設けられている。 For example, as shown in FIGS. 6A and 6B, through electrodes 17 and 43 are provided at a ratio of one per pixel P. Specifically, four through electrodes 17 and four through electrodes 43 are arranged near the periphery of the four charge storage electrodes 25 in one pixel group PP1. At this time, the optical filter 41 is provided with a plurality of through holes H2, and a plurality of through electrodes 43 are provided for each through hole H2, and are in contact with the inner surface of the through hole H2 without a gap. A plurality of through electrodes 43 (further, a plurality of through holes H2) are provided at positions facing the through holes H1 one by one for each through hole H2. Further, the semiconductor substrate 11 is provided with a plurality of through holes H1, and a plurality of through electrodes 17 are provided for each through hole H1.
　なお、図６（Ａ），（Ｂ）は一例であり、本開示の画素部１００における貫通電極１７，４３の配置位置はこれに限定されるものではない。図５（Ｃ），図６（Ａ），（Ｂ）に示したように、貫通電極１７，４３および読出電極２６は、オンチップレンズ５４の中心近傍とＺ軸方向において重ならない位置に設けるようにするとよい。光電変換領域１２に入射可能な赤外光の光量を高めることができ、各画素Ｐ１における赤外光検出感度を向上するのに有利だからである。 Note that FIGS. 6A and 6B are examples, and the arrangement positions of the through electrodes 17 and 43 in the pixel portion 100 of the present disclosure are not limited to this. As shown in FIGS. 5 (C), 6 (A), and (B), the through electrodes 17 and 43 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction. It is good to set it to. This is because the amount of infrared light that can be incident on the photoelectric conversion region 12 can be increased, which is advantageous for improving the infrared light detection sensitivity in each pixel P1.
　複数の貫通電極１７および複数の貫通電極４３は、例えば、図６（Ａ），（Ｂ）に示したように、ＸＹ面内において隣り合う１６個（４行４列）の画素Ｐ１の周辺付近に、等間隔で設けられている。複数の貫通電極１７および複数の貫通電極４３は、例えば、図６（Ａ），（Ｂ）に示したように、ＸＹ面内において隣り合う１６個（４行４列）の画素Ｐ１を等間隔で取り囲むように設けられている。複数の貫通電極１７および複数の貫通電極４３は、赤外光を反射するように規則的に配置されていてもよい。このとき、複数の貫通電極１７の間隔、および複数の貫通電極４３の間隔は、例えば、２６０ｎｍ、２００ｎｍ、１４０ｎｍ、１２０ｎｍまたは１００ｎｍとなっている。各貫通電極１７の幅は、例えば、複数の貫通電極１７の間隔の半分となっている。各貫通電極４３の幅は、例えば、複数の貫通電極４３の間隔の半分となっている。 The plurality of through electrodes 17 and the plurality of through electrodes 43 are, for example, near the periphery of 16 adjacent pixels P1 (4 rows and 4 columns) in the XY plane, as shown in FIGS. 6A and 6B. It is provided at equal intervals. The plurality of through electrodes 17 and the plurality of through electrodes 43, for example, as shown in FIGS. 6A and 6B, have 16 adjacent pixels P1 (4 rows and 4 columns) equally spaced in the XY plane. It is provided so as to surround it with. The plurality of through electrodes 17 and the plurality of through electrodes 43 may be regularly arranged so as to reflect infrared light. At this time, the intervals between the plurality of through electrodes 17 and the intervals between the plurality of through electrodes 43 are, for example, 260 nm, 200 nm, 140 nm, 120 nm, or 100 nm. The width of each through electrode 17 is, for example, half the distance between the plurality of through electrodes 17. The width of each through electrode 43 is, for example, half the distance between the plurality of through electrodes 43.
［固体撮像装置１の製造方法］
　図７Ａ～図７Ｆは、本実施の形態の固体撮像装置１の製造過程の一例を表している。まず、貫通孔Ｈ１の形成された半導体基板１１を用意する（図７Ａ）。このとき、貫通孔Ｈ１の底には、多層配線層３０に設けられた配線が露出しており、貫通孔Ｈ１の側面や、半導体基板１１の裏面１１Ｂは固定電荷層１３で覆われている。次に、貫通孔Ｈ１を埋め込むとともに裏面１１Ｂを覆うように絶縁層１６を形成する（図７Ｂ）。このとき、絶縁層１６の上面は平坦面になっている。次に、絶縁層１６の平坦面に、光学フィルタ４１を形成した後（図７Ｃ）、光学フィルタ４１のうち貫通孔Ｈ１と対向する箇所から、貫通孔Ｈ１を介して多層配線層３０の配線が露出する深さまで貫通孔Ｈ３を形成する（図７Ｄ）。 [Manufacturing method of solid-state image sensor 1]
7A to 7F show an example of the manufacturing process of the solid-state image sensor 1 of the present embodiment. First, the semiconductor substrate 11 in which the through hole H1 is formed is prepared (FIG. 7A). At this time, the wiring provided in the multilayer wiring layer 30 is exposed at the bottom of the through hole H1, and the side surface of the through hole H1 and the back surface 11B of the semiconductor substrate 11 are covered with the fixed charge layer 13. Next, the insulating layer 16 is formed so as to embed the through hole H1 and cover the back surface 11B (FIG. 7B). At this time, the upper surface of the insulating layer 16 is a flat surface. Next, after the optical filter 41 is formed on the flat surface of the insulating layer 16 (FIG. 7C), the wiring of the multilayer wiring layer 30 is connected from the portion of the optical filter 41 facing the through hole H1 through the through hole H1. A through hole H3 is formed to an exposed depth (FIG. 7D).
　次に、貫通孔Ｈ３を埋め込むように貫通電極１７，４３を形成する（図７Ｅ）。次に、配線層４４および接続部４５を形成するとともに、配線層４４および接続部４５を埋め込むように絶縁層４２を形成する（図７Ｆ）。その後、有機光電変換部２０、封止膜５１、カラーフィルタ５２および平坦化膜５３を形成し、平坦化膜５３の表面（光入射面Ｓｉｎ）にオンチップレンズ５４を形成する。このようにして、本実施の形態の固体撮像装置１が製造される。 Next, through electrodes 17 and 43 are formed so as to embed the through holes H3 (FIG. 7E). Next, the wiring layer 44 and the connecting portion 45 are formed, and the insulating layer 42 is formed so as to embed the wiring layer 44 and the connecting portion 45 (FIG. 7F). After that, the organic photoelectric conversion unit 20, the sealing film 51, the color filter 52, and the flattening film 53 are formed, and the on-chip lens 54 is formed on the surface (light incident surface Sin) of the flattening film 53. In this way, the solid-state image sensor 1 of the present embodiment is manufactured.
［固体撮像装置１の作用効果］
　本実施の形態の固体撮像装置１は、入射側から順に積層された可視光域の波長を有する光を検出して光電変換を行う有機光電変換部２０と、赤外光域に透過バンドを有する光学フィルタ４１と、赤外光域の波長を有する光を検出して光電変換を行う光電変換部１０とを有する。このため、赤色画素ＰＲ、緑色画素ＰＧ、および青色画素ＰＢからそれぞれ得られる赤色光信号、緑色光信号および青色光信号により構成される可視光画像と、複数の画素Ｐの全てから得られる赤外光信号を用いた赤外光画像とを同時に、ＸＹ面内方向において同じ位置で取得することができる。よって、ＸＹ面内方向における高集積化が実現できる。 [Action and effect of solid-state image sensor 1]
The solid-state imaging device 1 of the present embodiment has an organic photoelectric conversion unit 20 that detects light having a wavelength in the visible light region stacked in order from the incident side and performs photoelectric conversion, and a transmission band in the infrared light region. It has an optical filter 41 and a photoelectric conversion unit 10 that detects light having a wavelength in the infrared light region and performs photoelectric conversion. Therefore, a visible light image composed of a red light signal, a green light signal, and a blue light signal obtained from the red pixel PR, the green pixel PG, and the blue pixel PB, respectively, and infrared rays obtained from all of the plurality of pixels P. An infrared light image using an optical signal can be simultaneously acquired at the same position in the XY in-plane direction. Therefore, high integration in the in-plane direction of XY can be realized.
　さらに、光電変換部１０は、一対のゲート電極１４Ａ，１４Ｂと、ＦＤ１５Ａ，１５Ｂとを有するようにしたので、被写体との距離の情報を含む距離画像としての赤外光画像を取得することができる。したがって、本実施の形態の固体撮像装置１によれば、高解像度の可視光画像の取得と、奥行き情報を有する赤外光画像の取得とを両立することができる。 Further, since the photoelectric conversion unit 10 has a pair of gate electrodes 14A and 14B and FD15A and 15B, it is possible to acquire an infrared light image as a distance image including information on the distance to the subject. .. Therefore, according to the solid-state image sensor 1 of the present embodiment, it is possible to obtain both a high-resolution visible light image and an infrared light image having depth information at the same time.
　本実施の形態では、有機光電変換部２０が、読出電極２６と半導体層２１と有機光電変換層２２と上部電極２３とが順に積層された構造に加え、半導体層２１の下方に設けられた絶縁層２４と、その絶縁層２４を介して半導体層２１と対向するように設けられた電荷蓄積電極２５とを有するようにしている。したがって、有機光電変換層２２において光電変換により生じる電荷を半導体層２１の一部、例えば半導体層２１のうち絶縁層２４を介して電荷蓄積電極２５に対応した領域部分に蓄積することができる。このため、例えば露光開始時に半導体層２１における電荷の除去、すなわち半導体層２１の完全空乏化を実現できる。その結果、ｋＴＣノイズを減少させることができるので、ランダムノイズによる画質の低下を抑制することができる。さらに、半導体層２１を設けずに有機光電変換層２２に電荷（例えば電子）を蓄積する場合と比較して、電荷蓄積時の正孔と電子との再結合が防止され、蓄積した電荷（例えば電子）の読出電極２６への転送効率を増加させることができるうえ、暗電流の生成を抑制することができる。 In the present embodiment, the organic photoelectric conversion unit 20 has a structure in which the read electrode 26, the semiconductor layer 21, the organic photoelectric conversion layer 22 and the upper electrode 23 are laminated in this order, and the insulation provided below the semiconductor layer 21. It has a layer 24 and a charge storage electrode 25 provided so as to face the semiconductor layer 21 via the insulating layer 24 thereof. Therefore, in the organic photoelectric conversion layer 22, the charge generated by the photoelectric conversion can be accumulated in a part of the semiconductor layer 21, for example, in the region portion of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24. Therefore, for example, it is possible to remove the electric charge in the semiconductor layer 21 at the start of exposure, that is, to completely deplete the semiconductor layer 21. As a result, kTC noise can be reduced, so that deterioration of image quality due to random noise can be suppressed. Further, as compared with the case where charges (for example, electrons) are accumulated in the organic photoelectric conversion layer 22 without providing the semiconductor layer 21, recombination of holes and electrons at the time of charge accumulation is prevented, and the accumulated charges (for example) are prevented. The transfer efficiency of electrons) to the read electrode 26 can be increased, and the generation of dark current can be suppressed.
　また、本実施の形態では、画素部１００において、１つのオンチップレンズ５４と、１つのカラーフィルタ５２と、１つの電荷蓄積電極２５と、１つの光電変換領域１２とがＺ軸方向において互いに対応する位置に設けられている。このため、赤色画素ＰＲ１、緑色画素ＰＧ１、および青色画素ＰＢ１のそれぞれに対応する位置において赤外光信号を得ることができる。よって、本実施の形態の画素Ｐ１では、後述する第２の実施の形態の画素Ｐ２および第３の実施の形態の画素Ｐ３と比較して、高解像度を有する赤外光画像が得られる。 Further, in the present embodiment, in the pixel unit 100, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 correspond to each other in the Z-axis direction. It is provided at the position to be used. Therefore, an infrared optical signal can be obtained at a position corresponding to each of the red pixel PR1, the green pixel PG1, and the blue pixel PB1. Therefore, in the pixel P1 of the present embodiment, an infrared light image having a higher resolution can be obtained as compared with the pixel P2 of the second embodiment and the pixel P3 of the third embodiment described later.
　なお、本実施の形態では、赤色、緑色および青色のカラーフィルタ５２Ｒ，５２Ｇ，５２Ｂをそれぞれ備え、赤色光、緑色光および青色光をそれぞれ受光してカラーの可視光画像を取得するようにしたが、カラーフィルタ５２を設けずに白黒の可視光画像を取得するようにしてもよい。 In the present embodiment, the red, green, and blue color filters 52R, 52G, and 52B are provided, respectively, to receive red light, green light, and blue light, respectively, to acquire a color visible light image. , A black-and-white visible light image may be acquired without providing the color filter 52.
　また、本実施の形態では、貫通電極１７および読出電極２６を、オンチップレンズ５４の中心近傍とＺ軸方向において重ならない位置に設けるようにしたので、各画素Ｐ１における赤外光検出感度を向上させることができる。 Further, in the present embodiment, since the through electrode 17 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction, the infrared light detection sensitivity in each pixel P1 is improved. Can be made to.
　本実施の形態では、光学フィルタ４１に設けられた貫通孔Ｈ２を貫通する貫通電極４３は、光学フィルタ４１に設けられた貫通孔Ｈ２の内面に接している。これにより、光入射面Ｓｉｎを透過した可視光が光学フィルタ４１を透過せずに光電変換領域１２に入射する光路が、光入射面Ｓｉｎと光電変換領域１２との間に存在しない。その結果、隣接する光電変換領域１２同士の間における可視光の斜入射を抑制し、混色を防ぐことができる。 In the present embodiment, the through electrode 43 penetrating the through hole H2 provided in the optical filter 41 is in contact with the inner surface of the through hole H2 provided in the optical filter 41. As a result, there is no optical path between the light incident surface Sin and the photoelectric conversion region 12 in which the visible light transmitted through the light incident surface Sin is incident on the photoelectric conversion region 12 without passing through the optical filter 41. As a result, it is possible to suppress oblique incident of visible light between adjacent photoelectric conversion regions 12 and prevent color mixing.
　本実施の形態では、光学フィルタ４１が、貫通孔Ｈ１を埋め込む絶縁層１６の平坦面に接して形成されている。これにより、例えば、光学フィルタ４１を、製造過程において絶縁層１６の平坦面上に形成することにより、光学フィルタ４１には膜厚むらが無いので、各画素Ｐ１における赤外光検出感度の低下を抑制することができる。さらに、ｋＴＣノイズを減少させることもできるので、ランダムノイズによる画質の低下を抑制することができる。 In the present embodiment, the optical filter 41 is formed in contact with the flat surface of the insulating layer 16 in which the through hole H1 is embedded. As a result, for example, by forming the optical filter 41 on the flat surface of the insulating layer 16 in the manufacturing process, the optical filter 41 has no uneven film thickness, so that the infrared light detection sensitivity in each pixel P1 is lowered. It can be suppressed. Further, since kTC noise can be reduced, deterioration of image quality due to random noise can be suppressed.
　本実施の形態において、複数の貫通電極１７および複数の貫通電極４３は、赤外光を反射するように規則的に配置されている場合には、隣接する光電変換領域１２同士の間における赤外光の斜入射を抑制し、混色を防ぐことができる。 In the present embodiment, when the plurality of through electrodes 17 and the plurality of through electrodes 43 are regularly arranged so as to reflect infrared light, infrared rays between adjacent photoelectric conversion regions 12 are present. It is possible to suppress oblique incidence of light and prevent color mixing.
＜２．第１の実施の形態の変形例＞
［変形例Ａ］
　図８は、上記実施の形態の固体撮像装置１の画素ＰのＬｖ４における概略構成の一変形例を表している。上記実施の形態において、光学フィルタ４１を貫通する複数の貫通孔Ｈ４が設けられていてもよい。貫通孔Ｈ４は、本開示の「第３の貫通孔」に対応する一具体例である。この場合、複数の貫通孔Ｈ４は、複数の貫通孔Ｈ２において、互いに隣接する２つの貫通孔Ｈ２の間ごとに１つずつ設けられている。さらに、複数の反射層４６が貫通孔Ｈ４ごとに１つずつ設けられており、赤外光を反射するスリット隔壁として機能する。各反射層４６は、例えば、タングステン（Ｗ）などの金属材料によって構成されている。反射層４６は、本開示の「反射層」に対応する一具体例である。 <2. Modification example of the first embodiment>
[Modification A]
FIG. 8 shows an example of a modification of the schematic configuration of the pixel P of the solid-state image sensor 1 of the above embodiment in Lv4. In the above embodiment, a plurality of through holes H4 that penetrate the optical filter 41 may be provided. The through hole H4 is a specific example corresponding to the "third through hole" of the present disclosure. In this case, the plurality of through holes H4 are provided one by one in each of the two through holes H2 adjacent to each other in the plurality of through holes H2. Further, a plurality of reflective layers 46 are provided for each through hole H4, and function as a slit partition wall that reflects infrared light. Each reflective layer 46 is made of a metal material such as tungsten (W). The reflective layer 46 is a specific example corresponding to the “reflective layer” of the present disclosure.
　図９Ａ，図９Ｂは、本変形例の固体撮像装置１の製造過程の一例を表している。まず、図７Ａ～図７Ｃまでの製造過程を経た後、光学フィルタ４１のうち貫通孔Ｈ１と対向する箇所から、貫通孔Ｈ１を介して多層配線層３０の配線が露出する深さまで貫通孔Ｈ３を形成するとともに、光学フィルタ４１のうち貫通孔Ｈ１と対向する箇所から、絶縁層１６の平坦面が露出する深さまで貫通孔Ｈ４を形成する（図７Ｄ、図９Ａ）。次に、貫通孔Ｈ３を埋め込むように貫通電極１７，４３を形成するとともに、貫通孔Ｈ４を埋め込むように反射層４６を形成する（図７Ｅ、図９Ｂ）。次に、配線層４４および接続部４５を形成するとともに、配線層４４および接続部４５を埋め込むように絶縁層４２を形成する（図７Ｆ）。その後、有機光電変換部２０、封止膜５１、カラーフィルタ５２および平坦化膜５３を形成し、平坦化膜５３の表面（光入射面Ｓｉｎ）にオンチップレンズ５４を形成する。このようにして、本変形例の固体撮像装置１が製造される。 9A and 9B show an example of the manufacturing process of the solid-state image sensor 1 of this modified example. First, after going through the manufacturing process of FIGS. 7A to 7C, the through hole H3 is formed from the portion of the optical filter 41 facing the through hole H1 to the depth where the wiring of the multilayer wiring layer 30 is exposed through the through hole H1. At the same time, the through hole H4 is formed from the portion of the optical filter 41 facing the through hole H1 to the depth at which the flat surface of the insulating layer 16 is exposed (FIGS. 7D and 9A). Next, the through electrodes 17 and 43 are formed so as to embed the through hole H3, and the reflective layer 46 is formed so as to embed the through hole H4 (FIGS. 7E and 9B). Next, the wiring layer 44 and the connecting portion 45 are formed, and the insulating layer 42 is formed so as to embed the wiring layer 44 and the connecting portion 45 (FIG. 7F). After that, the organic photoelectric conversion unit 20, the sealing film 51, the color filter 52, and the flattening film 53 are formed, and the on-chip lens 54 is formed on the surface (light incident surface Sin) of the flattening film 53. In this way, the solid-state image sensor 1 of this modification is manufactured.
　本変形例では、互いに隣接する２つの貫通電極４３の間に反射層４６が設けられている。これにより、隣接する光電変換領域１２同士の間における赤外光の斜入射を抑制し、混色を防ぐことができる。 In this modification, the reflective layer 46 is provided between the two through electrodes 43 adjacent to each other. As a result, it is possible to suppress oblique incident of infrared light between adjacent photoelectric conversion regions 12 and prevent color mixing.
［変形例Ｂ］
　図１０は、上記実施の形態の固体撮像装置１の画素ＰのＬｖ４における概略構成の一変形例を表している。上記実施の形態において、光学フィルタ４１、貫通孔Ｈ１および絶縁層１６を貫通する複数の貫通孔Ｈ５が設けられていてもよい。貫通孔Ｈ５は、本開示の「第１の貫通孔」「第２の貫通孔」に対応する一具体例である。この場合、複数の貫通孔Ｈ５は、複数の貫通孔Ｈ１，Ｈ２のうち、互いに隣接する２つの貫通孔Ｈ１，Ｈ２の間に１つずつもしくは複数個ずつ設けられている。さらに、複数のダミーの貫通電極４７が貫通孔Ｈ５ごとに１つずつ設けられている。各貫通電極４７は、貫通電極１７，４３と共通の材料によって構成されている。各ダミーの貫通電極４７は、多層配線層３０とは電気的に分離されている。 [Modification B]
FIG. 10 shows an example of a modification of the schematic configuration of the pixel P of the solid-state image sensor 1 of the above embodiment in Lv4. In the above embodiment, a plurality of through holes H5 that penetrate the optical filter 41, the through holes H1 and the insulating layer 16 may be provided. The through hole H5 is a specific example corresponding to the "first through hole" and "second through hole" of the present disclosure. In this case, the plurality of through holes H5 are provided one by one or a plurality of through holes H5 between the two through holes H1 and H2 adjacent to each other among the plurality of through holes H1 and H2. Further, a plurality of dummy through electrodes 47 are provided for each through hole H5. Each through electrode 47 is made of a material common to the through electrodes 17 and 43. The through silicon via 47 of each dummy is electrically separated from the multilayer wiring layer 30.
　図１１Ａ，図１１Ｂは、本変形例の固体撮像装置１の製造過程の一例を表している。まず、図７Ａ～図７Ｃまでの製造過程を経た後、光学フィルタ４１のうち貫通孔Ｈ１と対向する箇所から、貫通孔Ｈ１を介して多層配線層３０の配線が露出する深さまで貫通孔Ｈ３を形成するとともに、光学フィルタ４１のうち貫通孔Ｈ１と対向する箇所から、貫通孔Ｈ１を介して多層配線層３０の表面（絶縁性の表面だけ）が露出する深さまで貫通孔Ｈ５を形成する（図７Ｄ、図１１Ａ）。次に、貫通孔Ｈ３を埋め込むように貫通電極１７，４３を形成するとともに、貫通孔Ｈ５を埋め込むように貫通電極４７を形成する（図７Ｅ、図１１Ｂ）。次に、配線層４４および接続部４５を形成するとともに、配線層４４および接続部４５を埋め込むように絶縁層４２を形成する（図７Ｆ）。その後、有機光電変換部２０、封止膜５１、カラーフィルタ５２および平坦化膜５３を形成し、平坦化膜５３の表面（光入射面Ｓｉｎ）にオンチップレンズ５４を形成する。このようにして、本変形例の固体撮像装置１が製造される。 11A and 11B show an example of the manufacturing process of the solid-state image sensor 1 of this modified example. First, after going through the manufacturing process of FIGS. 7A to 7C, the through hole H3 is formed from the portion of the optical filter 41 facing the through hole H1 to the depth where the wiring of the multilayer wiring layer 30 is exposed through the through hole H1. At the same time, the through hole H5 is formed from a portion of the optical filter 41 facing the through hole H1 to a depth where the surface of the multilayer wiring layer 30 (only the insulating surface) is exposed through the through hole H1 (FIG. 7D, FIG. 11A). Next, the through electrodes 17 and 43 are formed so as to embed the through holes H3, and the through electrodes 47 are formed so as to embed the through holes H5 (FIGS. 7E and 11B). Next, the wiring layer 44 and the connecting portion 45 are formed, and the insulating layer 42 is formed so as to embed the wiring layer 44 and the connecting portion 45 (FIG. 7F). After that, the organic photoelectric conversion unit 20, the sealing film 51, the color filter 52, and the flattening film 53 are formed, and the on-chip lens 54 is formed on the surface (light incident surface Sin) of the flattening film 53. In this way, the solid-state image sensor 1 of this modification is manufactured.
　本変形例では、互いに隣接する２つの貫通電極４３の間に１または複数の貫通電極４７が設けられている。これにより、隣接する光電変換領域１２同士の間における赤外光の斜入射を抑制し、混色を防ぐことができる。 In this modification, one or a plurality of through electrodes 47 are provided between two through electrodes 43 adjacent to each other. As a result, it is possible to suppress oblique incident of infrared light between adjacent photoelectric conversion regions 12 and prevent color mixing.
＜３．第２の実施の形態＞
　図１２は、本開示の第２の実施の形態に係る光検出システム２０１の全体構成の一例を表す模式図である。図１３は、光検出システム２０１の回路構成の一例を表す模式図である。光検出システム２０１は、光Ｌ２を発する光源部としての発光装置２１０と、光電変換素子を有する受光部としての光検出装置２２０とを備えている。光検出装置２２０としては、上述した固体撮像装置１を用いることができる。光検出システム２０１は、さらに、システム制御部２３０、光源駆動部２４０、センサ制御部２５０、光源側光学系２６０、およびカメラ側光学系２７０を備えていてもよい。 <3. Second Embodiment>
FIG. 12 is a schematic diagram showing an example of the overall configuration of the photodetection system 201 according to the second embodiment of the present disclosure. FIG. 13 is a schematic diagram showing an example of the circuit configuration of the photodetection system 201. The photodetector system 201 includes a light emitting device 210 as a light source unit that emits light L2, and a photodetector 220 as a light receiving unit having a photoelectric conversion element. As the photodetector 220, the solid-state image sensor 1 described above can be used. The light detection system 201 may further include a system control unit 230, a light source drive unit 240, a sensor control unit 250, a light source side optical system 260, and a camera side optical system 270.
　光検出装置２２０は光Ｌ１と光Ｌ２とを検出することができる。光Ｌ１は、外部からの環境光が被写体（測定対象物）２００（図１２）において反射された光である。光Ｌ２は発光装置２１０において発光されたのち、被写体２００に反射された光である。光Ｌ１は例えば可視光であり、光Ｌ２は例えば赤外光である。光Ｌ１は、光検出装置２２０における有機光電変換部において検出可能であり、光Ｌ２は、光検出装置２２０における光電変換部において検出可能である。光Ｌ１から被写体２００の画像情報を獲得し、光Ｌ２から被写体２００と光検出システム２０１との間の距離情報を獲得することができる。光検出システム２０１は、例えばスマートフォン等の電子機器や、車などの移動体に搭載することができる。発光装置２１０は例えば、半導体レーザ、面発光半導体レーザ、垂直共振器型面発光レーザ（ＶＣＳＥＬ）で構成することができる。発光装置２１０から発光された光Ｌ２の光検出装置２２０による検出方法としては、例えばｉＴＯＦ方式を採用することができるが、これに限定されることはない。ｉＴＯＦ方式では、光電変換部は、例えば光飛行時間（Time-of-Flight ;TOF）により被写体２００との距離を測定することができる。発光装置２１０から発光された光Ｌ２の光検出装置２２０による検出方法としては、例えば、ストラクチャード・ライト方式やステレオビジョン方式を採用することもできる。例えばストラクチャード・ライト方式では、あらかじめ定められたパターンの光を被写体２００に投影し、そのパターンのひずみ具合を解析することによって光検出システム２０１と被写体２００との距離を測定することができる。また、ステレオビジョン方式においては、例えば２以上のカメラを用い、被写体２００を２以上の異なる視点から見た２以上の画像を取得することで光検出システム２０１と被写体との距離を測定することができる。なお、発光装置２１０と光検出装置２２０とは、システム制御部２３０によって同期制御することができる。 The photodetector 220 can detect light L1 and light L2. The light L1 is light in which ambient light from the outside is reflected by the subject (measurement object) 200 (FIG. 12). The light L2 is light that is emitted by the light emitting device 210 and then reflected by the subject 200. The light L1 is, for example, visible light, and the light L2 is, for example, infrared light. The light L1 can be detected by the organic photoelectric conversion unit in the photodetector 220, and the light L2 can be detected by the photoelectric conversion unit in the photodetector 220. The image information of the subject 200 can be acquired from the light L1, and the distance information between the subject 200 and the photodetection system 201 can be acquired from the light L2. The photodetection system 201 can be mounted on an electronic device such as a smartphone or a moving body such as a car. The light emitting device 210 can be composed of, for example, a semiconductor laser, a surface emitting semiconductor laser, or a vertical resonator type surface emitting laser (VCSEL). As a method for detecting the light L2 emitted from the light emitting device 210 by the photodetector 220, for example, the iTOF method can be adopted, but the method is not limited thereto. In the iTOF method, the photoelectric conversion unit can measure the distance to the subject 200 by, for example, the light flight time (Time-of-Flight; TOF). As a detection method of the light L2 emitted from the light emitting device 210 by the photodetector 220, for example, a structured light method or a stereovision method can be adopted. For example, in the structured light method, the distance between the photodetection system 201 and the subject 200 can be measured by projecting light of a predetermined pattern onto the subject 200 and analyzing the degree of distortion of the pattern. Further, in the stereo vision method, for example, using two or more cameras, the distance between the photodetection system 201 and the subject can be measured by acquiring two or more images of the subject 200 viewed from two or more different viewpoints. can. The light emitting device 210 and the photodetector 220 can be synchronously controlled by the system control unit 230.
＜４．電子機器への適用例＞
　図１４は、本技術を適用した電子機器２０００の構成例を示すブロック図である。電子機器２０００は、例えばカメラとしての機能を有する。 <4. Application example to electronic devices>
FIG. 14 is a block diagram showing a configuration example of the electronic device 2000 to which the present technology is applied. The electronic device 2000 has a function as, for example, a camera.
　電子機器２０００は、レンズ群などからなる光学部２００１、上述の固体撮像装置１など（以下、固体撮像装置１等という。）が適用される光検出装置２００２、およびカメラ信号処理回路であるＤＳＰ(Digital Signal Processor)回路２００３を備える。また、電子機器２０００は、フレームメモリ２００４、表示部２００５、記録部２００６、操作部２００７、および電源部２００８も備える。ＤＳＰ回路２００３、フレームメモリ２００４、表示部２００５、記録部２００６、操作部２００７および電源部２００８は、バスライン２００９を介して相互に接続されている。 The electronic device 2000 includes an optical unit 2001 composed of a lens group or the like, an optical detection device 2002 to which the above-mentioned solid-state image sensor 1 or the like (hereinafter referred to as a solid-state image sensor 1 or the like) is applied, and a DSP (camera signal processing circuit). Digital Signal Processor) circuit 2003 is provided. The electronic device 2000 also includes a frame memory 2004, a display unit 2005, a recording unit 2006, an operation unit 2007, and a power supply unit 2008. The DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, the operation unit 2007, and the power supply unit 2008 are connected to each other via the bus line 2009.
　光学部２００１は、被写体からの入射光（像光）を取り込んで光検出装置２００２の撮像面上に結像する。光検出装置２００２は、光学部２００１によって撮像面上に結像された入射光の光量を画素単位で電気信号に変換して画素信号として出力する。 The optical unit 2001 captures incident light (image light) from the subject and forms an image on the image pickup surface of the photodetector 2002. The photodetector 2002 converts the amount of incident light imaged on the imaging surface by the optical unit 2001 into an electric signal in pixel units and outputs it as a pixel signal.
　表示部２００５は、例えば、液晶パネルや有機ＥＬパネル等のパネル型表示装置からなり、光検出装置２００２で撮像された動画または静止画を表示する。記録部２００６は、光検出装置２００２で撮像された動画または静止画を、ハードディスクや半導体メモリ等の記録媒体に記録する。 The display unit 2005 comprises a panel-type display device such as a liquid crystal panel or an organic EL panel, and displays a moving image or a still image captured by the photodetector 2002. The recording unit 2006 records a moving image or a still image captured by the optical detection device 2002 on a recording medium such as a hard disk or a semiconductor memory.
　操作部２００７は、ユーザによる操作の下に、電子機器２０００が持つ様々な機能について操作指令を発する。電源部２００８は、ＤＳＰ回路２００３、フレームメモリ２００４、表示部２００５、記録部２００６および操作部２００７の動作電源となる各種の電源を、これら供給対象に対して適宜供給する。 The operation unit 2007 issues operation commands for various functions of the electronic device 2000 under the operation of the user. The power supply unit 2008 appropriately supplies various power sources that serve as operating power sources for the DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, and the operation unit 2007 to these supply targets.
　上述したように、光検出装置２００２として、上述した固体撮像装置１等を用いることで、良好な画像の取得が期待できる。 As described above, good image acquisition can be expected by using the above-mentioned solid-state image pickup device 1 or the like as the photodetector 2002.
　＜５．体内情報取得システムへの応用例＞
　本開示に係る技術（本技術）は、様々な製品へ応用することができる。例えば、本開示に係る技術は、内視鏡手術システムに適用されてもよい。 <5. Application example to internal information acquisition system>
The technique according to the present disclosure (the present technique) can be applied to various products. For example, the techniques according to the present disclosure may be applied to an endoscopic surgery system.
　図１５は、本開示に係る技術（本技術）が適用され得る、カプセル型内視鏡を用いた患者の体内情報取得システムの概略的な構成の一例を示すブロック図である。 FIG. 15 is a block diagram showing an example of a schematic configuration of a patient's internal information acquisition system using a capsule endoscope to which the technique according to the present disclosure (the present technique) can be applied.
　体内情報取得システム１０００１は、カプセル型内視鏡１０１００と、外部制御装置１０２００とから構成される。 The internal information acquisition system 10001 is composed of a capsule endoscope 10100 and an external control device 10200.
　カプセル型内視鏡１０１００は、検査時に、患者によって飲み込まれる。カプセル型内視鏡１０１００は、撮像機能及び無線通信機能を有し、患者から自然排出されるまでの間、胃や腸等の臓器の内部を蠕動運動等によって移動しつつ、当該臓器の内部の画像（以下、体内画像ともいう）を所定の間隔で順次撮像し、その体内画像についての情報を体外の外部制御装置１０２００に順次無線送信する。 The capsule endoscope 10100 is swallowed by the patient at the time of examination. The capsule-type endoscope 10100 has an imaging function and a wireless communication function, and moves inside an organ such as the stomach and intestine by peristaltic movement until it is naturally excreted from the patient, and inside the organ. Images (hereinafter, also referred to as internal organ images) are sequentially imaged at predetermined intervals, and information about the internal organ images is sequentially wirelessly transmitted to an external control device 10200 outside the body.
　外部制御装置１０２００は、体内情報取得システム１０００１の動作を統括的に制御する。また、外部制御装置１０２００は、カプセル型内視鏡１０１００から送信されてくる体内画像についての情報を受信し、受信した体内画像についての情報に基づいて、表示装置（図示せず）に当該体内画像を表示するための画像データを生成する。 The external control device 10200 comprehensively controls the operation of the internal information acquisition system 10001. Further, the external control device 10200 receives information about the internal image transmitted from the capsule endoscope 10100, and based on the information about the received internal image, the internal image is displayed on a display device (not shown). Generate image data to display.
　体内情報取得システム１０００１では、このようにして、カプセル型内視鏡１０１００が飲み込まれてから排出されるまでの間、患者の体内の様子を撮像した体内画像を随時得ることができる。 In the internal information acquisition system 10001, in this way, it is possible to obtain an internal image of the inside of the patient at any time from the time when the capsule endoscope 10100 is swallowed until it is discharged.
　カプセル型内視鏡１０１００と外部制御装置１０２００の構成及び機能についてより詳細に説明する。 The configuration and function of the capsule endoscope 10100 and the external control device 10200 will be described in more detail.
　カプセル型内視鏡１０１００は、カプセル型の筐体１０１０１を有し、その筐体１０１０１内には、光源部１０１１１、撮像部１０１１２、画像処理部１０１１３、無線通信部１０１１４、給電部１０１１５、電源部１０１１６、及び制御部１０１１７が収納されている。 The capsule-type endoscope 10100 has a capsule-type housing 10101, and in the housing 10101, a light source unit 10111, an image pickup unit 10112, an image processing unit 10113, a wireless communication unit 10114, a power feeding unit 10115, and a power supply unit are contained. The 10116 and the control unit 10117 are housed.
　光源部１０１１１は、例えばＬＥＤ（light emitting diode）等の光源から構成され、撮像部１０１１２の撮像視野に対して光を照射する。 The light source unit 10111 is composed of, for example, a light source such as an LED (light emission diode), and irradiates the imaging field of view of the imaging unit 10112 with light.
　撮像部１０１１２は、撮像素子、及び当該撮像素子の前段に設けられる複数のレンズからなる光学系から構成される。観察対象である体組織に照射された光の反射光（以下、観察光という）は、当該光学系によって集光され、当該撮像素子に入射する。撮像部１０１１２では、撮像素子において、そこに入射した観察光が光電変換され、その観察光に対応する画像信号が生成される。撮像部１０１１２によって生成された画像信号は、画像処理部１０１１３に提供される。 The image pickup unit 10112 is composed of an image pickup element and an optical system including a plurality of lenses provided in front of the image pickup element. The reflected light of the light irradiated to the body tissue to be observed (hereinafter referred to as observation light) is collected by the optical system and incident on the image pickup element. In the image pickup unit 10112, the observation light incident on the image pickup device is photoelectrically converted, and an image signal corresponding to the observation light is generated. The image signal generated by the image pickup unit 10112 is provided to the image processing unit 10113.
　画像処理部１０１１３は、ＣＰＵ（Central Processing Unit）やＧＰＵ（Graphics Processing Unit）等のプロセッサによって構成され、撮像部１０１１２によって生成された画像信号に対して各種の信号処理を行う。画像処理部１０１１３は、信号処理を施した画像信号を、ＲＡＷデータとして無線通信部１０１１４に提供する。 The image processing unit 10113 is composed of a processor such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit), and performs various signal processing on the image signal generated by the image pickup unit 10112. The image processing unit 10113 provides the signal-processed image signal to the wireless communication unit 10114 as RAW data.
　無線通信部１０１１４は、画像処理部１０１１３によって信号処理が施された画像信号に対して変調処理等の所定の処理を行い、その画像信号を、アンテナ１０１１４Ａを介して外部制御装置１０２００に送信する。また、無線通信部１０１１４は、外部制御装置１０２００から、カプセル型内視鏡１０１００の駆動制御に関する制御信号を、アンテナ１０１１４Ａを介して受信する。無線通信部１０１１４は、外部制御装置１０２００から受信した制御信号を制御部１０１１７に提供する。 The wireless communication unit 10114 performs predetermined processing such as modulation processing on the image signal processed by the image processing unit 10113, and transmits the image signal to the external control device 10200 via the antenna 10114A. Further, the wireless communication unit 10114 receives a control signal related to the drive control of the capsule endoscope 10100 from the external control device 10200 via the antenna 10114A. The wireless communication unit 10114 provides the control unit 10117 with a control signal received from the external control device 10200.
　給電部１０１１５は、受電用のアンテナコイル、当該アンテナコイルに発生した電流から電力を再生する電力再生回路、及び昇圧回路等から構成される。給電部１０１１５では、いわゆる非接触充電の原理を用いて電力が生成される。 The power feeding unit 10115 is composed of an antenna coil for receiving power, a power regeneration circuit that regenerates power from the current generated in the antenna coil, a booster circuit, and the like. In the power feeding unit 10115, electric power is generated using the so-called non-contact charging principle.
　電源部１０１１６は、二次電池によって構成され、給電部１０１１５によって生成された電力を蓄電する。図１５では、図面が煩雑になることを避けるために、電源部１０１１６からの電力の供給先を示す矢印等の図示を省略しているが、電源部１０１１６に蓄電された電力は、光源部１０１１１、撮像部１０１１２、画像処理部１０１１３、無線通信部１０１１４、及び制御部１０１１７に供給され、これらの駆動に用いられ得る。 The power supply unit 10116 is composed of a secondary battery and stores the electric power generated by the power supply unit 10115. In FIG. 15, in order to avoid complication of the drawing, the illustration of the arrow indicating the power supply destination from the power supply unit 10116 is omitted, but the power stored in the power supply unit 10116 is the light source unit 10111. , Is supplied to the image pickup unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the control unit 10117, and can be used to drive these.
　制御部１０１１７は、ＣＰＵ等のプロセッサによって構成され、光源部１０１１１、撮像部１０１１２、画像処理部１０１１３、無線通信部１０１１４、及び、給電部１０１１５の駆動を、外部制御装置１０２００から送信される制御信号に従って適宜制御する。 The control unit 10117 is composed of a processor such as a CPU, and is a control signal transmitted from the external control device 10200 to drive the light source unit 10111, the image pickup unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the power supply unit 10115. Control as appropriate according to.
　外部制御装置１０２００は、ＣＰＵ、ＧＰＵ等のプロセッサ、又はプロセッサとメモリ等の記憶素子が混載されたマイクロコンピュータ若しくは制御基板等で構成される。外部制御装置１０２００は、カプセル型内視鏡１０１００の制御部１０１１７に対して制御信号を、アンテナ１０２００Ａを介して送信することにより、カプセル型内視鏡１０１００の動作を制御する。カプセル型内視鏡１０１００では、例えば、外部制御装置１０２００からの制御信号により、光源部１０１１１における観察対象に対する光の照射条件が変更され得る。また、外部制御装置１０２００からの制御信号により、撮像条件（例えば、撮像部１０１１２におけるフレームレート、露出値等）が変更され得る。また、外部制御装置１０２００からの制御信号により、画像処理部１０１１３における処理の内容や、無線通信部１０１１４が画像信号を送信する条件（例えば、送信間隔、送信画像数等）が変更されてもよい。 The external control device 10200 is composed of a processor such as a CPU and GPU, or a microcomputer or a control board on which a processor and a storage element such as a memory are mixedly mounted. The external control device 10200 controls the operation of the capsule endoscope 10100 by transmitting a control signal to the control unit 10117 of the capsule endoscope 10100 via the antenna 10200A. In the capsule endoscope 10100, for example, the irradiation condition of light to the observation target in the light source unit 10111 can be changed by a control signal from the external control device 10200. Further, the imaging conditions (for example, the frame rate in the imaging unit 10112, the exposure value, etc.) can be changed by the control signal from the external control device 10200. Further, the content of processing in the image processing unit 10113 and the conditions for transmitting the image signal by the wireless communication unit 10114 (for example, transmission interval, number of transmitted images, etc.) may be changed by the control signal from the external control device 10200. ..
　また、外部制御装置１０２００は、カプセル型内視鏡１０１００から送信される画像信号に対して、各種の画像処理を施し、撮像された体内画像を表示装置に表示するための画像データを生成する。当該画像処理としては、例えば現像処理（デモザイク処理）、高画質化処理（帯域強調処理、超解像処理、ＮＲ(Noise reduction)処理及び／又は手ブレ補正処理等）、並びに／又は拡大処理（電子ズーム処理）等、各種の信号処理を行うことができる。外部制御装置１０２００は、表示装置の駆動を制御して、生成した画像データに基づいて撮像された体内画像を表示させる。あるいは、外部制御装置１０２００は、生成した画像データを記録装置（図示せず）に記録させたり、印刷装置（図示せず）に印刷出力させてもよい。 Further, the external control device 10200 performs various image processing on the image signal transmitted from the capsule type endoscope 10100, and generates image data for displaying the captured internal image on the display device. The image processing includes, for example, development processing (demosaic processing), high image quality processing (band enhancement processing, super-resolution processing, NR (Noise reduction) processing and / or camera shake correction processing, etc.), and / or enlargement processing ( Various signal processing such as electronic zoom processing) can be performed. The external control device 10200 controls the drive of the display device to display the captured internal image based on the generated image data. Alternatively, the external control device 10200 may have the generated image data recorded in a recording device (not shown) or printed out in a printing device (not shown).
　以上、本開示に係る技術が適用され得る体内情報取得システムの一例について説明した。本開示に係る技術は、以上説明した構成のうち、例えば撮像部１０１１２に適用することができる。このため、小型でありながら高い画像検出精度が得られる。 The above is an example of an in-vivo information acquisition system to which the technology according to the present disclosure can be applied. The technique according to the present disclosure can be applied to, for example, the image pickup unit 10112 among the configurations described above. Therefore, high image detection accuracy can be obtained in spite of its small size.
　＜６．内視鏡手術システムへの応用例＞
　本開示に係る技術（本技術）は、様々な製品へ応用することができる。例えば、本開示に係る技術は、内視鏡手術システムに適用されてもよい。 <6. Application example to endoscopic surgery system>
The technique according to the present disclosure (the present technique) can be applied to various products. For example, the techniques according to the present disclosure may be applied to an endoscopic surgery system.
　図１６は、本開示に係る技術（本技術）が適用され得る内視鏡手術システムの概略的な構成の一例を示す図である。 FIG. 16 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technique according to the present disclosure (the present technique) can be applied.
　図１６では、術者（医師）１１１３１が、内視鏡手術システム１１０００を用いて、患者ベッド１１１３３上の患者１１１３２に手術を行っている様子が図示されている。図示するように、内視鏡手術システム１１０００は、内視鏡１１１００と、気腹チューブ１１１１１やエネルギー処置具１１１１２等の、その他の術具１１１１０と、内視鏡１１１００を支持する支持アーム装置１１１２０と、内視鏡下手術のための各種の装置が搭載されたカート１１２００と、から構成される。 FIG. 16 illustrates how the surgeon (doctor) 11131 is performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000. As shown, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as an abdominal tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100. , A cart 11200 equipped with various devices for endoscopic surgery.
　内視鏡１１１００は、先端から所定の長さの領域が患者１１１３２の体腔内に挿入される鏡筒１１１０１と、鏡筒１１１０１の基端に接続されるカメラヘッド１１１０２と、から構成される。図示する例では、硬性の鏡筒１１１０１を有するいわゆる硬性鏡として構成される内視鏡１１１００を図示しているが、内視鏡１１１００は、軟性の鏡筒を有するいわゆる軟性鏡として構成されてもよい。 The endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.
　鏡筒１１１０１の先端には、対物レンズが嵌め込まれた開口部が設けられている。内視鏡１１１００には光源装置１１２０３が接続されており、当該光源装置１１２０３によって生成された光が、鏡筒１１１０１の内部に延設されるライトガイドによって当該鏡筒の先端まで導光され、対物レンズを介して患者１１１３２の体腔内の観察対象に向かって照射される。なお、内視鏡１１１００は、直視鏡であってもよいし、斜視鏡又は側視鏡であってもよい。 An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens. The endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
　カメラヘッド１１１０２の内部には光学系及び撮像素子が設けられており、観察対象からの反射光（観察光）は当該光学系によって当該撮像素子に集光される。当該撮像素子によって観察光が光電変換され、観察光に対応する電気信号、すなわち観察像に対応する画像信号が生成される。当該画像信号は、ＲＡＷデータとしてカメラコントロールユニット（ＣＣＵ: Camera Control Unit）１１２０１に送信される。 An optical system and an image sensor are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image sensor by the optical system. The observation light is photoelectrically converted by the image pickup device, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated. The image signal is transmitted to the camera control unit (CCU: Camera Control Unit) 11201 as RAW data.
　ＣＣＵ１１２０１は、ＣＰＵ（Central Processing Unit）やＧＰＵ（Graphics Processing Unit）等によって構成され、内視鏡１１１００及び表示装置１１２０２の動作を統括的に制御する。さらに、ＣＣＵ１１２０１は、カメラヘッド１１１０２から画像信号を受け取り、その画像信号に対して、例えば現像処理（デモザイク処理）等の、当該画像信号に基づく画像を表示するための各種の画像処理を施す。 The CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
　表示装置１１２０２は、ＣＣＵ１１２０１からの制御により、当該ＣＣＵ１１２０１によって画像処理が施された画像信号に基づく画像を表示する。 The display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.
　光源装置１１２０３は、例えばＬＥＤ（light emitting diode）等の光源から構成され、術部等を撮影する際の照射光を内視鏡１１１００に供給する。 The light source device 11203 is composed of, for example, a light source such as an LED (light emission diode), and supplies the irradiation light for photographing the surgical site or the like to the endoscope 11100.
　入力装置１１２０４は、内視鏡手術システム１１０００に対する入力インタフェースである。ユーザは、入力装置１１２０４を介して、内視鏡手術システム１１０００に対して各種の情報の入力や指示入力を行うことができる。例えば、ユーザは、内視鏡１１１００による撮像条件（照射光の種類、倍率及び焦点距離等）を変更する旨の指示等を入力する。 The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
　処置具制御装置１１２０５は、組織の焼灼、切開又は血管の封止等のためのエネルギー処置具１１１１２の駆動を制御する。気腹装置１１２０６は、内視鏡１１１００による視野の確保及び術者の作業空間の確保の目的で、患者１１１３２の体腔を膨らめるために、気腹チューブ１１１１１を介して当該体腔内にガスを送り込む。レコーダ１１２０７は、手術に関する各種の情報を記録可能な装置である。プリンタ１１２０８は、手術に関する各種の情報を、テキスト、画像又はグラフ等各種の形式で印刷可能な装置である。 The treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for cauterizing, incising, sealing a blood vessel, or the like. The pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator. Is sent. The recorder 11207 is a device capable of recording various information related to surgery. The printer 11208 is a device capable of printing various information related to surgery in various formats such as text, images, and graphs.
　なお、内視鏡１１１００に術部を撮影する際の照射光を供給する光源装置１１２０３は、例えばＬＥＤ、レーザ光源又はこれらの組み合わせによって構成される白色光源から構成することができる。ＲＧＢレーザ光源の組み合わせにより白色光源が構成される場合には、各色（各波長）の出力強度及び出力タイミングを高精度に制御することができるため、光源装置１１２０３において撮像画像のホワイトバランスの調整を行うことができる。また、この場合には、ＲＧＢレーザ光源それぞれからのレーザ光を時分割で観察対象に照射し、その照射タイミングに同期してカメラヘッド１１１０２の撮像素子の駆動を制御することにより、ＲＧＢそれぞれに対応した画像を時分割で撮像することも可能である。当該方法によれば、当該撮像素子にカラーフィルタを設けなくても、カラー画像を得ることができる。 The light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof. When a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out. Further, in this case, the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to correspond to each of RGB. It is also possible to capture the image in a time-division manner. According to this method, a color image can be obtained without providing a color filter in the image pickup device.
　また、光源装置１１２０３は、出力する光の強度を所定の時間ごとに変更するようにその駆動が制御されてもよい。その光の強度の変更のタイミングに同期してカメラヘッド１１１０２の撮像素子の駆動を制御して時分割で画像を取得し、その画像を合成することにより、いわゆる黒つぶれ及び白とびのない高ダイナミックレンジの画像を生成することができる。 Further, the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change of the light intensity to acquire an image in time division and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
　また、光源装置１１２０３は、特殊光観察に対応した所定の波長帯域の光を供給可能に構成されてもよい。特殊光観察では、例えば、体組織における光の吸収の波長依存性を利用して、通常の観察時における照射光（すなわち、白色光）に比べて狭帯域の光を照射することにより、粘膜表層の血管等の所定の組織を高コントラストで撮影する、いわゆる狭帯域光観察（Narrow Band Imaging）が行われる。あるいは、特殊光観察では、励起光を照射することにより発生する蛍光により画像を得る蛍光観察が行われてもよい。蛍光観察では、体組織に励起光を照射し当該体組織からの蛍光を観察すること（自家蛍光観察）、又はインドシアニングリーン（ICG）等の試薬を体組織に局注するとともに当該体組織にその試薬の蛍光波長に対応した励起光を照射し蛍光像を得ること等を行うことができる。光源装置１１２０３は、このような特殊光観察に対応した狭帯域光及び／又は励起光を供給可能に構成され得る。 Further, the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue, the surface layer of the mucous membrane is irradiated with light in a narrower band than the irradiation light (that is, white light) during normal observation. So-called narrow band imaging, in which a predetermined tissue such as a blood vessel is photographed with high contrast, is performed. Alternatively, in special light observation, fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light. In fluorescence observation, the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating the excitation light corresponding to the fluorescence wavelength of the reagent. The light source device 11203 may be configured to be capable of supplying narrowband light and / or excitation light corresponding to such special light observation.
　図１７は、図１６に示すカメラヘッド１１１０２及びＣＣＵ１１２０１の機能構成の一例を示すブロック図である。 FIG. 17 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG.
　カメラヘッド１１１０２は、レンズユニット１１４０１と、撮像部１１４０２と、駆動部１１４０３と、通信部１１４０４と、カメラヘッド制御部１１４０５と、を有する。ＣＣＵ１１２０１は、通信部１１４１１と、画像処理部１１４１２と、制御部１１４１３と、を有する。カメラヘッド１１１０２とＣＣＵ１１２０１とは、伝送ケーブル１１４００によって互いに通信可能に接続されている。 The camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and CCU11201 are communicably connected to each other by a transmission cable 11400.
　レンズユニット１１４０１は、鏡筒１１１０１との接続部に設けられる光学系である。鏡筒１１１０１の先端から取り込まれた観察光は、カメラヘッド１１１０２まで導光され、当該レンズユニット１１４０１に入射する。レンズユニット１１４０１は、ズームレンズ及びフォーカスレンズを含む複数のレンズが組み合わされて構成される。 The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. The observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
　撮像部１１４０２を構成する撮像素子は、１つ（いわゆる単板式）であってもよいし、複数（いわゆる多板式）であってもよい。撮像部１１４０２が多板式で構成される場合には、例えば各撮像素子によってＲＧＢそれぞれに対応する画像信号が生成され、それらが合成されることによりカラー画像が得られてもよい。あるいは、撮像部１１４０２は、３Ｄ（dimensional）表示に対応する右目用及び左目用の画像信号をそれぞれ取得するための１対の撮像素子を有するように構成されてもよい。３Ｄ表示が行われることにより、術者１１１３１は術部における生体組織の奥行きをより正確に把握することが可能になる。なお、撮像部１１４０２が多板式で構成される場合には、各撮像素子に対応して、レンズユニット１１４０１も複数系統設けられ得る。 The image pickup element constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type). When the image pickup unit 11402 is composed of a multi-plate type, for example, each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them. Alternatively, the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to the 3D (dimensional) display, respectively. The 3D display enables the operator 11131 to more accurately grasp the depth of the living tissue in the surgical site. When the image pickup unit 11402 is composed of a multi-plate type, a plurality of lens units 11401 may be provided corresponding to each image pickup element.
　また、撮像部１１４０２は、必ずしもカメラヘッド１１１０２に設けられなくてもよい。例えば、撮像部１１４０２は、鏡筒１１１０１の内部に、対物レンズの直後に設けられてもよい。 Further, the image pickup unit 11402 does not necessarily have to be provided on the camera head 11102. For example, the image pickup unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
　駆動部１１４０３は、アクチュエータによって構成され、カメラヘッド制御部１１４０５からの制御により、レンズユニット１１４０１のズームレンズ及びフォーカスレンズを光軸に沿って所定の距離だけ移動させる。これにより、撮像部１１４０２による撮像画像の倍率及び焦点が適宜調整され得る。 The drive unit 11403 is composed of an actuator, and the zoom lens and the focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the image pickup unit 11402 can be adjusted as appropriate.
　通信部１１４０４は、ＣＣＵ１１２０１との間で各種の情報を送受信するための通信装置によって構成される。通信部１１４０４は、撮像部１１４０２から得た画像信号をＲＡＷデータとして伝送ケーブル１１４００を介してＣＣＵ１１２０１に送信する。 The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU11201. The communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
　また、通信部１１４０４は、ＣＣＵ１１２０１から、カメラヘッド１１１０２の駆動を制御するための制御信号を受信し、カメラヘッド制御部１１４０５に供給する。当該制御信号には、例えば、撮像画像のフレームレートを指定する旨の情報、撮像時の露出値を指定する旨の情報、並びに／又は撮像画像の倍率及び焦点を指定する旨の情報等、撮像条件に関する情報が含まれる。 Further, the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image. Contains information about the condition.
　なお、上記のフレームレートや露出値、倍率、焦点等の撮像条件は、ユーザによって適宜指定されてもよいし、取得された画像信号に基づいてＣＣＵ１１２０１の制御部１１４１３によって自動的に設定されてもよい。後者の場合には、いわゆるＡＥ（Auto Exposure）機能、ＡＦ（Auto Focus）機能及びＡＷＢ（Auto White Balance）機能が内視鏡１１１００に搭載されていることになる。 The image pickup conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU11201 based on the acquired image signal. good. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.
　カメラヘッド制御部１１４０５は、通信部１１４０４を介して受信したＣＣＵ１１２０１からの制御信号に基づいて、カメラヘッド１１１０２の駆動を制御する。 The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
　通信部１１４１１は、カメラヘッド１１１０２との間で各種の情報を送受信するための通信装置によって構成される。通信部１１４１１は、カメラヘッド１１１０２から、伝送ケーブル１１４００を介して送信される画像信号を受信する。 The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
　また、通信部１１４１１は、カメラヘッド１１１０２に対して、カメラヘッド１１１０２の駆動を制御するための制御信号を送信する。画像信号や制御信号は、電気通信や光通信等によって送信することができる。 Further, the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102. Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
　画像処理部１１４１２は、カメラヘッド１１１０２から送信されたＲＡＷデータである画像信号に対して各種の画像処理を施す。 The image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.
　制御部１１４１３は、内視鏡１１１００による術部等の撮像、及び、術部等の撮像により得られる撮像画像の表示に関する各種の制御を行う。例えば、制御部１１４１３は、カメラヘッド１１１０２の駆動を制御するための制御信号を生成する。 The control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.
　また、制御部１１４１３は、画像処理部１１４１２によって画像処理が施された画像信号に基づいて、術部等が映った撮像画像を表示装置１１２０２に表示させる。この際、制御部１１４１３は、各種の画像認識技術を用いて撮像画像内における各種の物体を認識してもよい。例えば、制御部１１４１３は、撮像画像に含まれる物体のエッジの形状や色等を検出することにより、鉗子等の術具、特定の生体部位、出血、エネルギー処置具１１１１２の使用時のミスト等を認識することができる。制御部１１４１３は、表示装置１１２０２に撮像画像を表示させる際に、その認識結果を用いて、各種の手術支援情報を当該術部の画像に重畳表示させてもよい。手術支援情報が重畳表示され、術者１１１３１に提示されることにより、術者１１１３１の負担を軽減することや、術者１１１３１が確実に手術を進めることが可能になる。 Further, the control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques. For example, the control unit 11413 detects a surgical tool such as forceps, a specific biological part, bleeding, mist when using the energy treatment tool 11112, etc. by detecting the shape, color, etc. of the edge of the object included in the captured image. Can be recognized. When displaying the captured image on the display device 11202, the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can surely proceed with the surgery.
　カメラヘッド１１１０２及びＣＣＵ１１２０１を接続する伝送ケーブル１１４００は、電気信号の通信に対応した電気信号ケーブル、光通信に対応した光ファイバ、又はこれらの複合ケーブルである。 The transmission cable 11400 connecting the camera head 11102 and CCU11201 is an electric signal cable corresponding to electric signal communication, an optical fiber corresponding to optical communication, or a composite cable thereof.
　ここで、図示する例では、伝送ケーブル１１４００を用いて有線で通信が行われていたが、カメラヘッド１１１０２とＣＣＵ１１２０１との間の通信は無線で行われてもよい。 Here, in the illustrated example, the communication is performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.
　以上、本開示に係る技術が適用され得る内視鏡手術システムの一例について説明した。本開示に係る技術は、以上説明した構成のうち、例えばカメラヘッド１１１０２の撮像部１１４０２に適用され得る。撮像部１０４０２に本開示に係る技術を適用することにより、より鮮明な術部画像を得ることができるため、術者における術部の視認性が向上する。 The above is an example of an endoscopic surgery system to which the technique according to the present disclosure can be applied. The technique according to the present disclosure can be applied to, for example, the image pickup unit 11402 of the camera head 11102 among the configurations described above. By applying the technique according to the present disclosure to the image pickup unit 10402, a clearer image of the surgical site can be obtained, so that the visibility of the surgical site by the operator is improved.
　なお、ここでは、一例として内視鏡手術システムについて説明したが、本開示に係る技術は、その他、例えば、顕微鏡手術システム等に適用されてもよい。 Although the endoscopic surgery system has been described here as an example, the technique according to the present disclosure may be applied to other, for example, a microscopic surgery system.
　＜７．移動体への応用例＞
　本開示に係る技術（本技術）は、様々な製品へ応用することができる。例えば、本開示に係る技術は、自動車、電気自動車、ハイブリッド電気自動車、自動二輪車、自転車、パーソナルモビリティ、飛行機、ドローン、船舶、ロボット等のいずれかの種類の移動体に搭載される装置として実現されてもよい。 <7. Application example to mobile>
The technique according to the present disclosure (the present technique) can be applied to various products. For example, the technology according to the present disclosure is realized as a device mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. You may.
　図１８は、本開示に係る技術が適用され得る移動体制御システムの一例である車両制御システムの概略的な構成例を示すブロック図である。 FIG. 18 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technique according to the present disclosure can be applied.
　車両制御システム１２０００は、通信ネットワーク１２００１を介して接続された複数の電子制御ユニットを備える。図１８に示した例では、車両制御システム１２０００は、駆動系制御ユニット１２０１０、ボディ系制御ユニット１２０２０、車外情報検出ユニット１２０３０、車内情報検出ユニット１２０４０、及び統合制御ユニット１２０５０を備える。また、統合制御ユニット１２０５０の機能構成として、マイクロコンピュータ１２０５１、音声画像出力部１２０５２、及び車載ネットワークＩ／Ｆ（Interface）１２０５３が図示されている。 The vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001. In the example shown in FIG. 18, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050. Further, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are shown.
　駆動系制御ユニット１２０１０は、各種プログラムにしたがって車両の駆動系に関連する装置の動作を制御する。例えば、駆動系制御ユニット１２０１０は、内燃機関又は駆動用モータ等の車両の駆動力を発生させるための駆動力発生装置、駆動力を車輪に伝達するための駆動力伝達機構、車両の舵角を調節するステアリング機構、及び、車両の制動力を発生させる制動装置等の制御装置として機能する。 The drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 has a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating braking force of the vehicle.
　ボディ系制御ユニット１２０２０は、各種プログラムにしたがって車体に装備された各種装置の動作を制御する。例えば、ボディ系制御ユニット１２０２０は、キーレスエントリシステム、スマートキーシステム、パワーウィンドウ装置、あるいは、ヘッドランプ、バックランプ、ブレーキランプ、ウィンカー又はフォグランプ等の各種ランプの制御装置として機能する。この場合、ボディ系制御ユニット１２０２０には、鍵を代替する携帯機から発信される電波又は各種スイッチの信号が入力され得る。ボディ系制御ユニット１２０２０は、これらの電波又は信号の入力を受け付け、車両のドアロック装置、パワーウィンドウ装置、ランプ等を制御する。 The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, turn signals or fog lamps. In this case, the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches. The body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
　車外情報検出ユニット１２０３０は、車両制御システム１２０００を搭載した車両の外部の情報を検出する。例えば、車外情報検出ユニット１２０３０には、撮像部１２０３１が接続される。車外情報検出ユニット１２０３０は、撮像部１２０３１に車外の画像を撮像させるとともに、撮像された画像を受信する。車外情報検出ユニット１２０３０は、受信した画像に基づいて、人、車、障害物、標識又は路面上の文字等の物体検出処理又は距離検出処理を行ってもよい。 The outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the image pickup unit 12031 is connected to the vehicle outside information detection unit 12030. The vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image. The out-of-vehicle information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
　撮像部１２０３１は、光を受光し、その光の受光量に応じた電気信号を出力する光センサである。撮像部１２０３１は、電気信号を画像として出力することもできるし、測距の情報として出力することもできる。また、撮像部１２０３１が受光する光は、可視光であっても良いし、赤外線等の非可視光であっても良い。 The image pickup unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received. The image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the image pickup unit 12031 may be visible light or invisible light such as infrared light.
　車内情報検出ユニット１２０４０は、車内の情報を検出する。車内情報検出ユニット１２０４０には、例えば、運転者の状態を検出する運転者状態検出部１２０４１が接続される。運転者状態検出部１２０４１は、例えば運転者を撮像するカメラを含み、車内情報検出ユニット１２０４０は、運転者状態検出部１２０４１から入力される検出情報に基づいて、運転者の疲労度合い又は集中度合いを算出してもよいし、運転者が居眠りをしていないかを判別してもよい。 The in-vehicle information detection unit 12040 detects the in-vehicle information. For example, a driver state detection unit 12041 that detects a driver's state is connected to the vehicle interior information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether or not the driver has fallen asleep.
　マイクロコンピュータ１２０５１は、車外情報検出ユニット１２０３０又は車内情報検出ユニット１２０４０で取得される車内外の情報に基づいて、駆動力発生装置、ステアリング機構又は制動装置の制御目標値を演算し、駆動系制御ユニット１２０１０に対して制御指令を出力することができる。例えば、マイクロコンピュータ１２０５１は、車両の衝突回避あるいは衝撃緩和、車間距離に基づく追従走行、車速維持走行、車両の衝突警告、又は車両のレーン逸脱警告等を含むＡＤＡＳ（Advanced Driver Assistance System）の機能実現を目的とした協調制御を行うことができる。 The microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit. A control command can be output to 12010. For example, the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
　また、マイクロコンピュータ１２０５１は、車外情報検出ユニット１２０３０又は車内情報検出ユニット１２０４０で取得される車両の周囲の情報に基づいて駆動力発生装置、ステアリング機構又は制動装置等を制御することにより、運転者の操作に拠らずに自律的に走行する自動運転等を目的とした協調制御を行うことができる。 Further, the microcomputer 12051 controls the driving force generating device, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the outside information detection unit 12030 or the inside information detection unit 12040, so that the driver can control the driver. It is possible to perform coordinated control for the purpose of automatic driving that runs autonomously without depending on the operation.
　また、マイクロコンピュータ１２０５１は、車外情報検出ユニット１２０３０で取得される車外の情報に基づいて、ボディ系制御ユニット１２０３０に対して制御指令を出力することができる。例えば、マイクロコンピュータ１２０５１は、車外情報検出ユニット１２０３０で検知した先行車又は対向車の位置に応じてヘッドランプを制御し、ハイビームをロービームに切り替える等の防眩を図ることを目的とした協調制御を行うことができる。 Further, the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information outside the vehicle acquired by the vehicle outside information detection unit 12030. For example, the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
　音声画像出力部１２０５２は、車両の搭乗者又は車外に対して、視覚的又は聴覚的に情報を通知することが可能な出力装置へ音声及び画像のうちの少なくとも一方の出力信号を送信する。図１８の例では、出力装置として、オーディオスピーカ１２０６１、表示部１２０６２及びインストルメントパネル１２０６３が例示されている。表示部１２０６２は、例えば、オンボードディスプレイ及びヘッドアップディスプレイの少なくとも一つを含んでいてもよい。 The audio image output unit 12052 transmits an output signal of at least one of audio and image to an output device capable of visually or audibly notifying information to the passenger or the outside of the vehicle. In the example of FIG. 18, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.
　図１９は、撮像部１２０３１の設置位置の例を示す図である。 FIG. 19 is a diagram showing an example of the installation position of the image pickup unit 12031.
　図１９では、撮像部１２０３１として、撮像部１２１０１、１２１０２、１２１０３、１２１０４、１２１０５を有する。 In FIG. 19, the image pickup unit 12031 has image pickup units 12101, 12102, 12103, 12104, and 12105.
　撮像部１２１０１、１２１０２、１２１０３、１２１０４、１２１０５は、例えば、車両１２１００のフロントノーズ、サイドミラー、リアバンパ、バックドア及び車室内のフロントガラスの上部等の位置に設けられる。フロントノーズに備えられる撮像部１２１０１及び車室内のフロントガラスの上部に備えられる撮像部１２１０５は、主として車両１２１００の前方の画像を取得する。サイドミラーに備えられる撮像部１２１０２、１２１０３は、主として車両１２１００の側方の画像を取得する。リアバンパ又はバックドアに備えられる撮像部１２１０４は、主として車両１２１００の後方の画像を取得する。車室内のフロントガラスの上部に備えられる撮像部１２１０５は、主として先行車両又は、歩行者、障害物、信号機、交通標識又は車線等の検出に用いられる。 The image pickup units 12101, 12102, 12103, 12104, 12105 are provided at positions such as, for example, the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100. The image pickup unit 12101 provided in the front nose and the image pickup section 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100. The image pickup units 12102 and 12103 provided in the side mirror mainly acquire images of the side of the vehicle 12100. The image pickup unit 12104 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100. The image pickup unit 12105 provided on the upper part of the windshield in the vehicle interior is mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
　なお、図１９には、撮像部１２１０１ないし１２１０４の撮影範囲の一例が示されている。撮像範囲１２１１１は、フロントノーズに設けられた撮像部１２１０１の撮像範囲を示し、撮像範囲１２１１２，１２１１３は、それぞれサイドミラーに設けられた撮像部１２１０２，１２１０３の撮像範囲を示し、撮像範囲１２１１４は、リアバンパ又はバックドアに設けられた撮像部１２１０４の撮像範囲を示す。例えば、撮像部１２１０１ないし１２１０４で撮像された画像データが重ね合わせられることにより、車両１２１００を上方から見た俯瞰画像が得られる。 Note that FIG. 19 shows an example of the shooting range of the imaging units 12101 to 12104. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, the imaging ranges 12112 and 12113 indicate the imaging range of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and the imaging range 12114 indicates the imaging range. The imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 can be obtained.
　撮像部１２１０１ないし１２１０４の少なくとも１つは、距離情報を取得する機能を有していてもよい。例えば、撮像部１２１０１ないし１２１０４の少なくとも１つは、複数の撮像素子からなるステレオカメラであってもよいし、位相差検出用の画素を有する撮像素子であってもよい。 At least one of the image pickup units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image pickup units 12101 to 12104 may be a stereo camera including a plurality of image pickup elements, or may be an image pickup element having pixels for phase difference detection.
　例えば、マイクロコンピュータ１２０５１は、撮像部１２１０１ないし１２１０４から得られた距離情報を基に、撮像範囲１２１１１ないし１２１１４内における各立体物までの距離と、この距離の時間的変化（車両１２１００に対する相対速度）を求めることにより、特に車両１２１００の進行路上にある最も近い立体物で、車両１２１００と略同じ方向に所定の速度（例えば、０km/h以上）で走行する立体物を先行車として抽出することができる。さらに、マイクロコンピュータ１２０５１は、先行車の手前に予め確保すべき車間距離を設定し、自動ブレーキ制御（追従停止制御も含む）や自動加速制御（追従発進制御も含む）等を行うことができる。このように運転者の操作に拠らずに自律的に走行する自動運転等を目的とした協調制御を行うことができる。 For example, the microcomputer 12051 has a distance to each three-dimensional object within the image pickup range 12111 to 12114 based on the distance information obtained from the image pickup unit 12101 to 12104, and a temporal change of this distance (relative speed with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance in front of the preceding vehicle, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like that autonomously travels without relying on the driver's operation.
　例えば、マイクロコンピュータ１２０５１は、撮像部１２１０１ないし１２１０４から得られた距離情報を元に、立体物に関する立体物データを、２輪車、普通車両、大型車両、歩行者、電柱等その他の立体物に分類して抽出し、障害物の自動回避に用いることができる。例えば、マイクロコンピュータ１２０５１は、車両１２１００の周辺の障害物を、車両１２１００のドライバが視認可能な障害物と視認困難な障害物とに識別する。そして、マイクロコンピュータ１２０５１は、各障害物との衝突の危険度を示す衝突リスクを判断し、衝突リスクが設定値以上で衝突可能性がある状況であるときには、オーディオスピーカ１２０６１や表示部１２０６２を介してドライバに警報を出力することや、駆動系制御ユニット１２０１０を介して強制減速や回避操舵を行うことで、衝突回避のための運転支援を行うことができる。 For example, the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the image pickup units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
　撮像部１２１０１ないし１２１０４の少なくとも１つは、赤外線を検出する赤外線カメラであってもよい。例えば、マイクロコンピュータ１２０５１は、撮像部１２１０１ないし１２１０４の撮像画像中に歩行者が存在するか否かを判定することで歩行者を認識することができる。かかる歩行者の認識は、例えば赤外線カメラとしての撮像部１２１０１ないし１２１０４の撮像画像における特徴点を抽出する手順と、物体の輪郭を示す一連の特徴点にパターンマッチング処理を行って歩行者か否かを判別する手順によって行われる。マイクロコンピュータ１２０５１が、撮像部１２１０１ないし１２１０４の撮像画像中に歩行者が存在すると判定し、歩行者を認識すると、音声画像出力部１２０５２は、当該認識された歩行者に強調のための方形輪郭線を重畳表示するように、表示部１２０６２を制御する。また、音声画像出力部１２０５２は、歩行者を示すアイコン等を所望の位置に表示するように表示部１２０６２を制御してもよい。 At least one of the image pickup units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging unit 12101 to 12104. Such recognition of a pedestrian is, for example, a procedure for extracting feature points in an image captured by an image pickup unit 12101 to 12104 as an infrared camera, and pattern matching processing is performed on a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine. When the microcomputer 12051 determines that a pedestrian is present in the captured image of the image pickup unit 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 determines the square contour line for emphasizing the recognized pedestrian. The display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
　以上、本開示に係る技術が適用され得る車両制御システムの一例について説明した。本開示に係る技術は、以上説明した構成のうち、例えば、撮像部１２０３１に適用され得る。撮像部１２０３１に本開示に係る技術を適用することにより、より見やすい撮影画像を得ることができるため、ドライバの疲労を軽減することが可能になる。 The above is an example of a vehicle control system to which the technique according to the present disclosure can be applied. The technique according to the present disclosure can be applied to, for example, the image pickup unit 12031 among the configurations described above. By applying the technique according to the present disclosure to the image pickup unit 12031, it is possible to obtain a photographed image that is easier to see, and thus it is possible to reduce driver fatigue.
＜８．その他の変形例＞
　以上、いくつかの実施の形態および変形例、ならびにそれらの適用例もしくは応用例（以下、実施の形態等という。）を挙げて本開示を説明したが、本開示は上記実施の形態等に限定されるものではなく、種々の変形が可能である。例えば本開示は、裏面照射型イメージセンサに限定されるものではなく、表面照射型イメージセンサにも適用可能である。 <8. Other variants>
Although the present disclosure has been described above with reference to some embodiments and modifications thereof, and their application examples or application examples (hereinafter, referred to as embodiments, etc.), the present disclosure is limited to the above-described embodiments and the like. It is not something that is done, and various modifications are possible. For example, the present disclosure is not limited to the back-illuminated image sensor, and is also applicable to the front-illuminated image sensor.
　また、本開示の撮像装置は、撮像部と信号処理部または光学系とがまとめてパッケージングされたモジュールの形態をなしていてもよい。 Further, the image pickup apparatus of the present disclosure may be in the form of a module in which an image pickup unit and a signal processing unit or an optical system are packaged together.
　さらに、上記実施の形態等では、光学レンズ系を介して撮像面上に結像された入射光の光量を画素単位で電気信号に変換して画素信号として出力する固体撮像装置、およびそれに搭載される撮像素子を例示して説明するようにしたが、本開示の光電変換素子は、そのような撮像素子に限定されるものではない。例えば被写体からの光を検出して受光し、受光量に応じた電荷を光電変換により生成し、蓄積するものであればよい。出力される信号は画像情報の信号でもよいし、測距情報の信号でもよい。 Further, in the above-described embodiment or the like, a solid-state image pickup device that converts the amount of incident light imaged on the image pickup surface via an optical lens system into an electric signal on a pixel-by-pixel basis and outputs it as a pixel signal, and is mounted on the solid-state image pickup device. Although the image pickup device is illustrated and described, the photoelectric conversion element of the present disclosure is not limited to such an image pickup device. For example, it may be any as long as it detects light from a subject, receives light, generates an electric charge according to the amount of received light by photoelectric conversion, and accumulates it. The output signal may be a signal of image information or a signal of distance measurement information.
　また、上記実施の形態等では、第１の光電変換部としての光電変換部１０がｉＴＯＦセンサである場合を例示して説明するようにしたが、本開示はこれに限定されない。すなわち、第１の光電変換部は、赤外光域の波長を有する光を検出するものに限定されず、他の波長域の波長光を検出するものであってもよい。また、光電変換部１０がｉＴＯＦセンサではない場合、転送トランジスタ（ＴＧ）は１つのみ設けるようにしてもよい。 Further, in the above-described embodiment and the like, the case where the photoelectric conversion unit 10 as the first photoelectric conversion unit is an iTOF sensor is illustrated and described, but the present disclosure is not limited to this. That is, the first photoelectric conversion unit is not limited to the one that detects the light having a wavelength in the infrared light region, and may detect the wavelength light in another wavelength region. Further, when the photoelectric conversion unit 10 is not an iTOF sensor, only one transfer transistor (TG) may be provided.
　さらに、上記実施の形態等では、本開示の光電変換素子として、光電変換領域１２を含む光電変換部１０と、有機光電変換層２２を含む有機光電変換部２０とが中間層４０を挟んで積層された撮像素子を例示するようにしが、本開示はこれに限定されるものではない。例えば、本開示の光電変換素子は、２つの有機光電変換領域が積層された構造を有するものであってもよいし、２つの無機光電変換領域が積層された構造を有するものであってもよい。また、上記実施の形態等では、光電変換部１０において主に赤外光域の波長光を検出して光電変換を行うと共に、有機光電変換部２０において主に可視光領域の波長光を検出して光電変換を行うようにしたが、本開示の光電変換素子はこれに限定されるものではない。本開示の光電変換素子では、第１の光電変換部および第２の光電変換部において感度を示す波長域は任意に設定可能である。 Further, in the above-described embodiment or the like, as the photoelectric conversion element of the present disclosure, the photoelectric conversion unit 10 including the photoelectric conversion region 12 and the organic photoelectric conversion unit 20 including the organic photoelectric conversion layer 22 are laminated with the intermediate layer 40 interposed therebetween. Although the image pickup device is illustrated, the present disclosure is not limited to this. For example, the photoelectric conversion element of the present disclosure may have a structure in which two organic photoelectric conversion regions are laminated, or may have a structure in which two inorganic photoelectric conversion regions are laminated. .. Further, in the above-described embodiment or the like, the photoelectric conversion unit 10 mainly detects wavelength light in the infrared light region to perform photoelectric conversion, and the organic photoelectric conversion unit 20 mainly detects wavelength light in the visible light region. However, the photoelectric conversion element of the present disclosure is not limited to this. In the photoelectric conversion element of the present disclosure, the wavelength range showing the sensitivity in the first photoelectric conversion unit and the second photoelectric conversion unit can be arbitrarily set.
　また、本開示の光電変換素子の各構成要素の構成材料は、上記実施の形態等において挙げた材料に限定されるものではない。例えば第１の光電変換部もしくは第２の光電変換部が可視光領域の光を受光して光電変換を行う場合には、第１の光電変換部もしくは第２の光電変換部が量子ドットを含むようにしてもよい。 Further, the constituent materials of each component of the photoelectric conversion element of the present disclosure are not limited to the materials mentioned in the above-described embodiments and the like. For example, when the first photoelectric conversion unit or the second photoelectric conversion unit receives light in the visible light region and performs photoelectric conversion, the first photoelectric conversion unit or the second photoelectric conversion unit includes quantum dots. You may do so.
　また、上記実施の形態等では、一の第２の光電変換層に対し、一対のゲート電極と、第２の光電変換層から一対のゲート電極をそれぞれ経由して到達する電荷を蓄積する一対の電荷保持部と、を含む場合を例示して説明するようにしたが、本開示はこれに限定されない。一の第２の光電変換層に対し、一のゲート電極および一の電荷保持部を設けるようにしてもよい。あるいは、一の第２の光電変換層に対し、３以上のゲート電極および３以上の電荷保持部を設けるようにしてもよい。また、本開示では、第２の光電変換層の電荷を読み出すトランジスタとしては、いわゆる縦型トランジスタに限定されるものではなく、プレーナー型トランジスタであってもよい。 Further, in the above-described embodiment or the like, a pair of gate electrodes and a pair of electric charges that reach from the second photoelectric conversion layer via the pair of gate electrodes are accumulated in the first second photoelectric conversion layer. Although the case including the charge holding portion is illustrated and described, the present disclosure is not limited to this. One gate electrode and one charge holding portion may be provided for one second photoelectric conversion layer. Alternatively, three or more gate electrodes and three or more charge holding portions may be provided for one second photoelectric conversion layer. Further, in the present disclosure, the transistor for reading the charge of the second photoelectric conversion layer is not limited to the so-called vertical transistor, and may be a planar transistor.
　本開示の一実施形態としての光電変換素子によれば、上記の構成により、例えば高画質の可視光画像情報と、距離情報を含む赤外光画像情報とを取得できる。なお、本明細書中に記載された効果はあくまで例示であってその記載に限定されるものではなく、他の効果があってもよい。また、本技術は以下のような構成を取り得るものである。
（１）
　半導体基板と、
　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
　を備えた
　光検出装置。
（２）
　各前記第１の貫通孔を埋め込むとともに前記第１の主面を覆うように形成され、前記光学フィルタ側に平坦面を有する絶縁層を更に備え、
　前記光学フィルタは、前記平坦面に接して形成されている
　（１）に記載の光検出装置。
（３）
　前記複数の貫通電極は、赤外光を反射するように規則的に配置されている
　（１）または（２）に記載の光検出装置。
（４）
　前記複数の第２の貫通孔において、互いに隣接する２つの前記第２の貫通孔の間ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第３の貫通孔と、
　前記第３の貫通孔ごとに１つずつ設けられ、赤外光を反射する複数の反射層と
　を更に備えた
　（１）ないし（３）のいずれか１つに記載の光検出装置。
（５）
　前記複数の貫通電極には、前記配線層と電気的に接続された複数の第１の貫通電極と、前記配線層とは電気的に分離された複数の第２の貫通電極とが含まれ、
　前記複数の第２の貫通電極は、前記複数の第１貫通電極のうち、互いに隣接する２つの前記第１貫通電極の間に１つずつもしくは複数個ずつ設けられている
　（１）ないし（３）のいずれか１つに記載の光検出装置。
（６）
　前記光学フィルタと前記光入射面との間であって、かつ、前記半導体基板の厚さ方向において前記第１の光電変換部と重なる位置に設けられ、可視光域を含む第２の波長域の光を検出して光電変換を行う第２の光電変換部を更に備え、
　前記貫通電極は、前記第２の光電変換部と電気的に接続されている
　（１）ないし（５）のいずれか１つに記載の光検出装置。
（７）
　前記第２の光電変換部は、
　前記貫通電極の直上に設けられた第１の電極、半導体層、光電変換層および第２の電極が前記第１の光電変換部側からこの順に積層された積層構造と、
　所定の間隙を介して前記半導体層と対向する位置に設けられた電荷蓄積電極と
　を有し、
　前記貫通電極は、前記第２の光電変換部において生じた信号電荷を、前記第１の電極を介して前記配線層に伝送するように構成されている
　（６）に記載の光検出装置。
（８）
　赤外光を発する発光装置と、
　光検出装置と
　を備え、
　前記光検出装置は、
　半導体基板と、
　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
　を有する
　光検出システム。
（９）
　光学部と、信号処理部と、光検出部とを備え、
　前記光検出部は、
　半導体基板と、
　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
　を有する
　電子機器。
（１０）
　可視光域に含まれる第１の光および赤外光域に含まれる第２の光を発する発光装置と、光検出装置とを有する光検出システムを備え、
　前記光検出装置は、
　半導体基板と、
　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
　を有する
　移動体。 According to the photoelectric conversion element as one embodiment of the present disclosure, for example, high-quality visible light image information and infrared light image information including distance information can be acquired by the above configuration. It should be noted that the effects described in the present specification are merely examples and are not limited to the description thereof, and other effects may be obtained. In addition, the present technology can have the following configurations.
(1)
With a semiconductor substrate,
A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. A photodetector equipped with.
(2)
An insulating layer that is formed so as to embed each of the first through holes and covers the first main surface and has a flat surface on the optical filter side is further provided.
The photodetector according to (1), wherein the optical filter is formed in contact with the flat surface.
(3)
The photodetector according to (1) or (2), wherein the plurality of through electrodes are regularly arranged so as to reflect infrared light.
(4)
In the plurality of second through holes, a plurality of third through holes provided one by one between the two adjacent second through holes and penetrating the optical filter, and a plurality of third through holes.
The photodetector according to any one of (1) to (3), which is provided one for each third through hole and further includes a plurality of reflective layers for reflecting infrared light.
(5)
The plurality of through electrodes include a plurality of first through electrodes electrically connected to the wiring layer and a plurality of second through electrodes electrically separated from the wiring layer.
The plurality of second through electrodes are provided one by one or a plurality of the first through electrodes between the two adjacent first through electrodes among the plurality of first through electrodes (1) to (3). ). The photodetector according to any one of.
(6)
A second wavelength region including a visible light region, which is provided between the optical filter and the light incident surface and at a position overlapping the first photoelectric conversion unit in the thickness direction of the semiconductor substrate. Further equipped with a second photoelectric conversion unit that detects light and performs photoelectric conversion,
The photodetector according to any one of (1) to (5), wherein the through silicon via is electrically connected to the second photoelectric conversion unit.
(7)
The second photoelectric conversion unit is
A laminated structure in which a first electrode, a semiconductor layer, a photoelectric conversion layer, and a second electrode provided directly above the through electrode are laminated in this order from the first photoelectric conversion unit side.
It has a charge storage electrode provided at a position facing the semiconductor layer via a predetermined gap, and has a charge storage electrode.
The photodetector according to (6), wherein the through electrode is configured to transmit a signal charge generated in the second photoelectric conversion unit to the wiring layer via the first electrode.
(8)
A light emitting device that emits infrared light and
Equipped with a photodetector
The photodetector is
With a semiconductor substrate,
A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. And has a light detection system.
(9)
It is equipped with an optical unit, a signal processing unit, and a photodetection unit.
The photodetector
With a semiconductor substrate,
A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. And electronic devices with.
(10)
A light detection system including a light emitting device that emits a first light included in a visible light region and a second light included in an infrared light region, and a light detecting device.
The photodetector is
With a semiconductor substrate,
A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. A moving body with and.
　本開示の一実施の形態に係る光検出装置、光検出システム、電子機器および移動体では、光学フィルタに設けられた貫通孔を貫通する貫通電極は、光学フィルタに設けられた貫通孔の内面に接している。これにより、光入射面を透過した可視光が光学フィルタを透過せずに第１の光電変換部に入射する光路が、光入射面と第１の光電変換部との間に存在しない。その結果、隣接する第１の光電変換部同士の間における可視光の斜入射を抑制し、混色を防ぐことができる。従って、高い機能を有する光電変換素子、光検出装置、光検出システム、電子機器および移動体を提供することができる。 In the light detection device, the light detection system, the electronic device, and the moving body according to the embodiment of the present disclosure, the through electrode penetrating the through hole provided in the optical filter is formed on the inner surface of the through hole provided in the optical filter. I'm in contact. As a result, there is no optical path between the light incident surface and the first photoelectric conversion unit so that the visible light transmitted through the light incident surface does not pass through the optical filter and is incident on the first photoelectric conversion unit. As a result, it is possible to suppress oblique incident of visible light between the adjacent first photoelectric conversion units and prevent color mixing. Therefore, it is possible to provide a photoelectric conversion element, a photodetector, a photodetector system, an electronic device, and a mobile body having high functions.
　本出願は、日本国特許庁において２０２０年１２月１６日に出願された日本特許出願番号第２０２０－２０８７１８号を基礎として優先権を主張するものであり、この出願のすべての内容を参照によって本出願に援用する。 This application claims priority on the basis of Japanese Patent Application No. 2020-20718 filed on December 16, 2020 at the Japan Patent Office, and the entire contents of this application are referred to in this application. Incorporate into the application.
　当業者であれば、設計上の要件や他の要因に応じて、種々の修正、コンビネーション、サブコンビネーション、および変更を想到し得るが、それらは添付の請求の範囲やその均等物の範囲に含まれるものであることが理解される。 Those skilled in the art may conceive various modifications, combinations, sub-combinations, and changes, depending on design requirements and other factors, which are included in the claims and their equivalents. It is understood that it is a person skilled in the art.

Claims (10)

  1. 　半導体基板と、
    　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
    　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
    　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
    　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
    　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
    　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
    　を備えた
    　光検出装置。     With a semiconductor substrate,
    A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
    A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
    An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
    A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
    A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
    A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. A photodetector equipped with.
  2. 　各前記第１の貫通孔を埋め込むとともに前記第１の主面を覆うように形成され、前記光学フィルタ側に平坦面を有する絶縁層を更に備え、
    　前記光学フィルタは、前記平坦面に接して形成されている
    　請求項１に記載の光検出装置。     An insulating layer that is formed so as to embed each of the first through holes and covers the first main surface and has a flat surface on the optical filter side is further provided.
    The photodetector according to claim 1, wherein the optical filter is formed in contact with the flat surface.
  3. 　前記複数の貫通電極は、赤外光を反射するように規則的に配置されている
    　請求項１に記載の光検出装置。     The photodetector according to claim 1, wherein the plurality of through electrodes are regularly arranged so as to reflect infrared light.
  4. 　前記複数の第２の貫通孔において、互いに隣接する２つの前記第２の貫通孔の間ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第３の貫通孔と、
    　前記第３の貫通孔ごとに１つずつ設けられ、赤外光を反射する複数の反射層と
    　を更に備えた
    　請求項１に記載の光検出装置。     In the plurality of second through holes, a plurality of third through holes provided one by one between the two adjacent second through holes and penetrating the optical filter, and a plurality of third through holes.
    The photodetector according to claim 1, further comprising a plurality of reflective layers that are provided for each of the third through holes and that reflect infrared light.
  5. 　前記複数の貫通電極には、前記配線層と電気的に接続された複数の第１の貫通電極と、前記配線層とは電気的に分離された複数の第２の貫通電極とが含まれ、
    　前記複数の第２の貫通電極は、前記複数の第１貫通電極のうち、互いに隣接する２つの前記第１貫通電極の間に１つずつもしくは複数個ずつ設けられている
    　請求項１に記載の光検出装置。     The plurality of through electrodes include a plurality of first through electrodes electrically connected to the wiring layer and a plurality of second through electrodes electrically separated from the wiring layer.
    The first aspect of claim 1, wherein the plurality of second through electrodes are provided one by one or a plurality of the first through electrodes between the two adjacent first through electrodes among the plurality of first through electrodes. Photodetector.
  6. 　前記光学フィルタと前記光入射面との間であって、かつ、前記半導体基板の厚さ方向において前記第１の光電変換部と重なる位置に設けられ、可視光域を含む第２の波長域の光を検出して光電変換を行う第２の光電変換部を更に備え、
    　前記貫通電極は、前記第２の光電変換部と電気的に接続されている
    　請求項１に記載の光検出装置。     A second wavelength region including a visible light region, which is provided between the optical filter and the light incident surface and at a position overlapping the first photoelectric conversion unit in the thickness direction of the semiconductor substrate. Further equipped with a second photoelectric conversion unit that detects light and performs photoelectric conversion,
    The photodetector according to claim 1, wherein the through silicon via is electrically connected to the second photoelectric conversion unit.
  7. 　前記第２の光電変換部は、
    　前記貫通電極の直上に設けられた第１の電極、半導体層、光電変換層および第２の電極が前記第１の光電変換部側からこの順に積層された積層構造と、
    　所定の間隙を介して前記半導体層と対向する位置に設けられた電荷蓄積電極と
    　を有し、
    　前記貫通電極は、前記第２の光電変換部において生じた信号電荷を、前記第１の電極を介して前記配線層に伝送するように構成されている
    　請求項６に記載の光検出装置。     The second photoelectric conversion unit is
    A laminated structure in which a first electrode, a semiconductor layer, a photoelectric conversion layer and a second electrode provided directly above the through electrode are laminated in this order from the first photoelectric conversion unit side.
    It has a charge storage electrode provided at a position facing the semiconductor layer via a predetermined gap, and has a charge storage electrode.
    The photodetector according to claim 6, wherein the through electrode is configured to transmit a signal charge generated in the second photoelectric conversion unit to the wiring layer via the first electrode.
  8. 　赤外光を発する発光装置と、
    　光検出装置と
    　を備え、
    　前記光検出装置は、
    　半導体基板と、
    　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
    　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
    　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
    　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
    　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
    　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
    　を有する
    　光検出システム。     A light emitting device that emits infrared light and
    Equipped with a photodetector
    The photodetector is
    With a semiconductor substrate,
    A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
    A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
    An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
    A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
    A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
    A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. And has a light detection system.
  9. 　光学部と、信号処理部と、光検出部とを備え、
    　前記光検出部は、
    　半導体基板と、
    　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
    　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
    　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
    　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
    　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
    　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
    　を有する
    　電子機器。     It is equipped with an optical unit, a signal processing unit, and a photodetection unit.
    The photodetector
    With a semiconductor substrate,
    A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
    A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
    An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
    A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
    A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
    A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. And electronic devices with.
  10. 　可視光域に含まれる第１の光および赤外光域に含まれる第２の光を発する発光装置と、光検出装置とを有する光検出システムを備え、
    　前記光検出装置は、
    　半導体基板と、
    　前記半導体基板内に設けられ、赤外光域を含む第１の波長域の光を検出して光電変換を行う複数の第１の光電変換部と、
    　前記半導体基板を貫通する、絶縁材料が埋め込まれた複数の第１の貫通孔と、
    　前記半導体基板の第１の主面と光入射面との間に設けられ、赤外光域に透過バンドを有する絶縁性の光学フィルタと、
    　前記第１の貫通孔と対向する位置に前記第１の貫通孔ごとに１つずつ設けられ、前記光学フィルタを貫通する複数の第２の貫通孔と、
    　前記半導体基板の、前記第１の主面と対向する第２の主面に接して設けられた配線層と、
    　前記第１の貫通孔ごとに１つずつ設けられ、前記第１の貫通孔および前記第２の貫通孔を貫通するとともに、前記第２の貫通孔の内面および前記配線層に接する複数の貫通電極と
    　を有する
    　移動体。     A light detection system including a light emitting device that emits a first light included in a visible light region and a second light included in an infrared light region, and a light detecting device.
    The photodetector is
    With a semiconductor substrate,
    A plurality of first photoelectric conversion units provided in the semiconductor substrate to detect light in a first wavelength region including an infrared light region and perform photoelectric conversion.
    A plurality of first through holes in which an insulating material is embedded, which penetrates the semiconductor substrate, and
    An insulating optical filter provided between the first main surface of the semiconductor substrate and the light incident surface and having a transmission band in the infrared light region,
    A plurality of second through holes provided one by one for each of the first through holes at positions facing the first through holes, and a plurality of second through holes penetrating the optical filter.
    A wiring layer provided in contact with a second main surface of the semiconductor substrate facing the first main surface, and a wiring layer.
    A plurality of through electrodes provided for each of the first through holes, penetrate the first through hole and the second through hole, and are in contact with the inner surface of the second through hole and the wiring layer. A moving body with and.
PCT/JP2021/045053 2020-12-16 2021-12-08 Optical detection device, optical detection system, electronic equipment, and movable body WO2022131090A1 (en)

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JP2020-208718 2020-12-16

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015021924A (en) * 2013-07-23 2015-02-02 日産自動車株式会社 Distance measurement apparatus
WO2016143531A1 (en) * 2015-03-09 2016-09-15 ソニー株式会社 Image capture element and method for manufacturing same, and electronic device
JP2017208496A (en) * 2016-05-20 2017-11-24 ソニー株式会社 Solid-state image pickup device and electronic apparatus
WO2019150989A1 (en) * 2018-01-31 2019-08-08 ソニー株式会社 Photoelectric conversion element and image capture device
US20200105815A1 (en) * 2018-09-27 2020-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Band-pass filter for stacked sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015021924A (en) * 2013-07-23 2015-02-02 日産自動車株式会社 Distance measurement apparatus
WO2016143531A1 (en) * 2015-03-09 2016-09-15 ソニー株式会社 Image capture element and method for manufacturing same, and electronic device
JP2017208496A (en) * 2016-05-20 2017-11-24 ソニー株式会社 Solid-state image pickup device and electronic apparatus
WO2019150989A1 (en) * 2018-01-31 2019-08-08 ソニー株式会社 Photoelectric conversion element and image capture device
US20200105815A1 (en) * 2018-09-27 2020-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Band-pass filter for stacked sensor

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