WO2022126751A1 - 一种像素结构及液晶面板 - Google Patents

一种像素结构及液晶面板 Download PDF

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Publication number
WO2022126751A1
WO2022126751A1 PCT/CN2020/140661 CN2020140661W WO2022126751A1 WO 2022126751 A1 WO2022126751 A1 WO 2022126751A1 CN 2020140661 W CN2020140661 W CN 2020140661W WO 2022126751 A1 WO2022126751 A1 WO 2022126751A1
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Prior art keywords
pixel
electrode
gap
sub
region
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French (fr)
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刘毅
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement

Definitions

  • the present application relates to the field of display technology, and in particular, to a pixel structure and a liquid crystal panel.
  • the liquid crystal display panel is composed of a color filter substrate, a thin film transistor substrate, a liquid crystal sandwiched between the color filter substrate and the thin film transistor substrate, and a sealing sealant; its working principle is to control the liquid crystal layer by applying a driving voltage on two glass substrates The rotation of the liquid crystal molecules refracts the light from the backlight module to produce a picture.
  • the high vertical alignment liquid crystal driving method has the characteristics of high contrast ratio, large aperture ratio and fast deflection speed of liquid crystal molecules. It is one of the key investment areas of TFT-LCD display panel manufacturers in the mainstream market.
  • FIG. 1 there is a pixel structure 100 in the prior art.
  • the pixel structure 100 is a pixel partition.
  • the aspect ratio of the pixel partition is L1 divided by W1.
  • FIG. 1 is a schematic diagram of the simulated pixel domain dark pattern distribution in the case where the aspect ratio of the pixel partition in Figure 1 is 2.5:1.
  • FIG. 3 is a simulation schematic diagram of the simulated pixel domain dark pattern distribution in the case where the aspect ratio of the pixel partition in FIG. 1 is 3.5:1.
  • the dark pattern area 107 presents very obvious irregular distortions, which greatly Increased risk of misalignment and display misalignment.
  • the color blocking area is in the shape of a long and narrow strip, and the aspect ratio of the pixel electrode area is larger than 3:1, which is prone to irregular liquid crystal dark lines.
  • the original cross-shaped dark lines become irregular and twisted dark lines. It increases the risk of abnormal alignment of the liquid crystal, which seriously affects the use function of the liquid crystal panel and impairs the technical problem of pixel transmittance.
  • the embodiments of the present application provide a pixel structure and a liquid crystal panel, which can solve the problem that when designing a pixel of a liquid crystal panel in the prior art, since the metal traces occupy the pixel space, the pixel electrode area is conventionally designed to be a long and narrow strip under the color blocking area. , and the aspect ratio of the pixel electrode area is larger than 3:1, which is prone to irregular liquid crystal dark lines.
  • the original cross-shaped dark lines become irregular and twisted dark lines, which increases the risk of abnormal alignment of the liquid crystal, which seriously affects the liquid crystal.
  • the use function of the panel the technical problem of impairing the pixel transmittance.
  • An embodiment of the present application provides a pixel structure, including a pixel electrode, the pixel electrode includes a trunk electrode, a branch electrode connected to the trunk electrode, and a sealing electrode surrounding the trunk electrode and the branch electrode, the trunk electrode The sealing electrode is connected to at least one end of the branch electrode; wherein, a slit electrode is formed on the long side of the sealing electrode, the slit electrode extends into the pixel structure, and the pixel electrode is divided into at least two pixel division.
  • the pixel structure includes a first pixel subregion and a second pixel subregion that are oppositely arranged, and a first gap and a second pixel subregion are provided between the first pixel subregion and the second pixel subregion.
  • a gap, the gap electrode includes a first gap electrode and a second gap electrode, the first gap electrode fills the first gap, and the second gap electrode fills the second gap.
  • the pixel structure further includes a third pixel subsection, a third gap and a fourth gap are provided between the third pixel subregion and the second pixel subregion, and the gap electrode includes a third gap electrode.
  • the gap electrode includes a third gap electrode.
  • the first notch and the third notch are located on the long side of one side of the pixel structure, and the second notch and the fourth notch are located on the other side of the pixel structure on the long side.
  • the aspect ratio of the first pixel sub-region, the second pixel sub-region and the third pixel sub-region is less than 3.
  • the trunk electrodes located in the gaps between the first pixel sub-area, the second pixel sub-area and the third pixel sub-area are linear, and the linear trunk electrodes are connected to the pixel structure. long sides are parallel.
  • the main electrode is a continuous grid-like structure.
  • the first pixel sub-area, the second pixel sub-area and the third pixel sub-area respectively add a horizontal trunk to the corresponding pixel sub-area along the long side of the pixel structure. electrodes, so that the trunk electrodes in each pixel sub-area are changed from a linear type to a cross-type, wherein each pixel sub-area is divided into 4 sub-pixel sub-areas by the cross-shaped main electrode.
  • the area sizes of the first pixel sub-region, the second pixel sub-region and the third pixel sub-region are different, and a horizontal trunk electrode is added in the pixel sub-region with the largest area, so that the The trunk electrodes in the pixel subarea with the largest area are changed from a straight type to a cross type, and the main trunk electrodes in the remaining pixel subareas are of a straight type.
  • the first notch, the second notch, the third notch, and the fourth notch are all rectangular, and the long side of the rectangle is greater than 14 mm and the short side is greater than 5 mm.
  • the branch electrodes and the trunk electrodes in the first pixel sub-area, the second pixel sub-area, and the third pixel sub-area are all formed in a Mion type.
  • the present application provides a liquid crystal panel, the liquid crystal panel includes a pixel structure, the pixel structure includes a pixel electrode, the pixel electrode includes a trunk electrode, a branch electrode connected to the trunk electrode, and a A trunk electrode and a sealing electrode of the branch electrode, the trunk electrode and at least one end of the branch electrode are connected to the sealing electrode; wherein, a slit electrode is formed on the long side of the sealing electrode, and the slit electrode extends to the in the pixel structure, and dividing the pixel electrode into at least two pixel sub-areas;
  • the pixel structure includes a first pixel sub-region and a second pixel sub-region arranged oppositely, a first gap and a second gap are arranged between the first pixel sub-region and the second pixel sub-region, and the gap electrode It includes a first gap electrode and a second gap electrode, the first gap electrode fills the first gap, and the second gap electrode fills the second gap.
  • the pixel structure further includes a third pixel subsection, a third gap and a fourth gap are provided between the third pixel subregion and the second pixel subregion, and the gap electrode further includes A third gap electrode and a fourth gap electrode, the third gap electrode fills the third gap, and the fourth gap electrode fills the fourth gap.
  • the first notch and the third notch are located on the long side of one side of the pixel structure, and the second notch and the fourth notch are located on the other side of the pixel structure on the long side.
  • the aspect ratio of the first pixel sub-region, the second pixel sub-region and the third pixel sub-region is less than 3.
  • the trunk electrodes located in the gaps between the first pixel sub-area, the second pixel sub-area and the third pixel sub-area are linear, and the linear trunk electrodes are connected to the pixel structure. long sides are parallel.
  • the main electrode is a continuous grid-like structure.
  • the first pixel sub-area, the second pixel sub-area and the third pixel sub-area respectively add a horizontal trunk to the corresponding pixel sub-area along the long side of the pixel structure. electrodes, so that the trunk electrodes in each pixel sub-area are changed from a linear type to a cross-type, wherein each pixel sub-area is divided into 4 sub-pixel sub-areas by the cross-shaped main electrode.
  • the area sizes of the first pixel sub-region, the second pixel sub-region and the third pixel sub-region are different, and a horizontal trunk electrode is added in the pixel sub-region with the largest area, so that the The trunk electrodes in the pixel subarea with the largest area are changed from a straight type to a cross type, and the main trunk electrodes in the remaining pixel subareas are of a straight type.
  • the first notch, the second notch, the third notch, and the fourth notch are all rectangular, and the long side of the rectangle is greater than 14 mm and the short side is greater than 5 mm.
  • the present application provides a pixel structure and a liquid crystal panel.
  • the pixel structure includes a pixel electrode.
  • the pixel electrode includes a trunk electrode, a branch electrode connected to the trunk electrode, and a sealing electrode surrounding the trunk electrode and the branch electrode.
  • the trunk electrode is connected to at least one end of the branch electrode.
  • a sealing electrode wherein, a slit electrode is formed on the long side of the sealing electrode, the slit electrode extends into the pixel structure, and the pixel electrode is divided into at least two pixel partitions, so that the original one pixel partition becomes a plurality of pixel partitions,
  • the gap is used to reduce the aspect ratio of the pixel subregion, and the horizontal trunk electrode is added in the divided pixel subregion, and the subdivided pixel subregion is further divided into multiple pixel domains, which shortens the length of the branch electrodes and optimizes the alignment of the pixel electrodes.
  • the electric field can improve the compensation ability of the liquid crystal driving signal, so that the abnormal dark pattern of the entire pixel structure is avoided, and the display quality of the pixel structure is improved.
  • FIG. 1 is a schematic structural diagram of the distribution of pixel electrodes in a pixel structure in the prior art.
  • FIG. 2 is a schematic diagram of a simulation of a liquid crystal dark fringe distribution in a pixel structure with an aspect ratio of 2.5:1 or 3:1 in the prior art.
  • FIG. 3 is a schematic diagram illustrating a simulation of the distribution of dark streaks in liquid crystal with an aspect ratio of 3.5:1 in a pixel partition in a pixel structure in the prior art.
  • FIG. 4 is a first structural schematic diagram of pixel electrode distribution in a pixel structure according to an embodiment of the present application.
  • FIG. 5 is a second structural schematic diagram of pixel electrode distribution in a pixel structure according to an embodiment of the present application.
  • FIG. 6 is a third structural schematic diagram of pixel electrode distribution in a pixel structure according to an embodiment of the present application.
  • FIG. 7 is a fourth structural schematic diagram of pixel electrode distribution in a pixel structure according to an embodiment of the present application.
  • FIG. 8 is a fifth structural schematic diagram of pixel electrode distribution in a pixel structure according to an embodiment of the present application.
  • FIG. 9 is a schematic diagram of a third pixel partition structure in the fifth structure of the pixel electrode distribution of the pixel structure in FIG. 8 .
  • FIG. 10 is an enlarged view of part A in FIG. 8 .
  • FIG. 11 is an enlarged view of B in FIG. 8 .
  • FIG. 12 is a schematic diagram of simulation of liquid crystal dark fringe distribution corresponding to a fifth structure of pixel electrode distribution in a pixel structure according to an embodiment of the present application.
  • FIG. 13 is a schematic diagram of a film layer structure of a liquid crystal panel provided by an embodiment of the present application.
  • the pixel electrode area is conventionally designed to be a long and narrow strip under the color blocking area, and the aspect ratio of the pixel electrode area is larger than 3:1.
  • the technical problem, this application can solve the defect.
  • the present application provides a pixel structure, the pixel structure includes a pixel electrode, the pixel electrode includes a trunk electrode, a branch electrode connected to the trunk electrode, and a sealing electrode surrounding the trunk electrode and the branch electrode, and at least one end of the trunk electrode and the branch electrode is connected to the sealing electrode;
  • a slit electrode is formed on the long side of the sealing electrode, the slit electrode extends into the pixel structure, and the pixel electrode is divided into at least two pixel divisions, the aspect ratio of the divided pixel division is reduced, and the length and width of the divided pixel division are When the ratio is less than 3, the gap electrode fills the missing pixel electrode and provides deflection voltage for the liquid crystal at the gap position, so that the abnormal dark pattern of the entire pixel is avoided and the display quality of the pixel is improved.
  • an embodiment of the present application provides a first structural schematic diagram of the distribution of pixel electrodes in a pixel structure 200 .
  • the pixel structure 200 includes a pixel electrode, and the pixel electrode includes a trunk electrode 201 and branch electrodes 202 connected to the trunk electrode 201 . , and the sealing electrode 203 surrounding the trunk electrode 201 and the branch electrode 202.
  • the trunk electrode 201, the branch electrode 202 and the sealing electrode 203 are all transparent ITO films, and the width of the transparent ITO film of the trunk electrode 201 is greater than 5 um.
  • At least one end of the trunk electrode 201 and the branch electrode 202 is connected with a sealing electrode 203; wherein, the long sides of the sealing electrode 203 are respectively formed with a first gap electrode 2031 and a second gap electrode 2032, the first gap electrode 2031 and the first gap electrode 2031
  • the slit electrodes 2032 are preferably strips, and the width of the strips is preferably greater than or equal to 6um.
  • the first slit electrodes 2031 and the second slit electrodes 2032 divide the pixel electrodes into oppositely arranged first pixel partitions and second pixels. Partition, a first gap (represented by A in FIG.
  • the first gap electrode 2031 fills the first gap
  • the second gap electrode 2032 fills the second gap.
  • the shape of the divided pixel subregion is different from the shape of the original pixel subregion. Setting the size of the gap reasonably can ensure that the divided pixel subregion has a The aspect ratio is lower than 3, so that the dark pattern of the entire pixel is avoided and the display quality of the pixel is improved.
  • the first pixel subsection includes a first pixel domain 204 and a second pixel domain 205 arranged side by side
  • the second pixel subsection includes a third pixel domain 206 and a fourth pixel domain 207 arranged side by side
  • the first pixel domain 204 and the first pixel domain 204 are arranged side by side.
  • a first gap is provided between the three pixel domains 206
  • a second gap is provided between the second pixel domain 205 and the fourth pixel domain 207
  • an array of branch electrodes 202 is provided in each pixel domain
  • a trunk electrode 201 is provided around the pixel domain
  • the trunk electrode 201 is a continuous grid structure, preferably integrally formed
  • the trunk electrode 201 located in the pixel domain gap is linear.
  • the shape of the divided pixel partition is changed. Since the shape of the divided pixel partition is different from the original pixel partition, the long side of the divided pixel partition may not be in the same direction as the original pixel partition.
  • the gap can realize that the aspect ratio of the pixel partition after segmentation is less than the value of L2 divided by W2, and the aspect ratio of the pixel partition after segmentation is preferably less than 3, so that the abnormal dark pattern of the entire pixel domain is avoided and the display quality of the pixel is improved. .
  • an embodiment of the present application provides a second structural schematic diagram of the distribution of pixel electrodes in the pixel structure 200.
  • the pixel structure 200 further includes a third pixel subregion, the first A third gap and a fourth gap are arranged between the three-pixel partition and the second pixel partition.
  • the gap electrode further includes a third gap electrode 2033 and a fourth gap electrode 2034.
  • the third gap electrode 2033 fills the third gap, and the fourth gap electrode 2034 to fill the fourth gap.
  • the third pixel partition includes a fifth pixel domain 208 and a sixth pixel domain 209 arranged side by side, a third gap is arranged between the third pixel domain 206 and the fifth pixel domain 208, and the fourth pixel domain 207 and the sixth pixel domain 207 A fourth gap is arranged between the pixel domains 209.
  • the third gap and the fourth gap further change the shape of the pixel partition after segmentation.
  • the ratio is less than the value of dividing L2 by W2, and the aspect ratio of the divided pixel partition is preferably less than 3, so that the abnormal dark pattern of the entire pixel domain is avoided and the display quality of the pixel is improved.
  • the branch electrodes and the trunk electrodes in the first pixel sub-area, the second pixel sub-area, and the third pixel sub-area are all preferably formed in the Mion type.
  • an embodiment of the present application provides a third structural schematic diagram of the pixel electrode distribution in the pixel structure 200 .
  • the third structure of the pixel electrode distribution is to add a horizontal line in each pixel partition in the first structure. Trunk electrode, the horizontal trunk electrode runs through the pixel partition, and the new horizontal trunk electrode forms a cross shape with the vertical trunk electrode in the original pixel partition, that is, a horizontal trunk is added on the long side of the vertical pixel structure to the corresponding pixel partition.
  • the sub-pixel partition in this embodiment is equivalent to the sub-pixel domain.
  • the first pixel sub-region and the second pixel sub-region are divided into a square shape
  • the first pixel domain 204 includes a first sub-pixel domain 2041 and a second sub-pixel domain 2042
  • the second pixel domain 205 includes a third sub-pixel domain 2051 and the fourth sub-pixel domain 2052
  • the third pixel domain 206 includes the fifth sub-pixel domain 2061 and the sixth sub-pixel domain 2062
  • the fourth pixel domain 207 includes the seventh sub-pixel domain 2071 and the eighth sub-pixel domain 2072, FIG.
  • the aspect ratio of the pixel sub-region does not change after segmentation, but the number of trunk electrodes in the sub-pixel sub-region increases, the length also increases, the number of branch electrodes in the sub-pixel domain increases, and the length is shortened and decreased.
  • the impedance of the entire pixel electrode is reduced.
  • an embodiment of the present application provides a fourth structural schematic diagram of pixel electrode distribution in a pixel structure 200 .
  • the fourth structure of pixel electrode distribution is to add a horizontal trunk electrode to each pixel partition in the second structure. , so that the trunk electrodes in each pixel partition are changed from a straight line to a cross shape, wherein the cross-shaped trunk electrode divides each pixel partition into 4 sub-pixel partitions, and the sub-pixel partition in this embodiment is also equivalent to the sub-pixel partition. pixel domain.
  • the first pixel sub-region, the second pixel sub-region and the third pixel sub-region are divided into a square shape, the first pixel domain 204 includes the first sub-pixel domain 2041 and the second sub-pixel domain 2042, and the second pixel domain 205 includes the third sub-pixel domain
  • the fifth pixel domain 208 includes a ninth subpixel domain 2081 and a tenth subpixel domain 2082, and the sixth pixel domain 209 includes an eleventh subpixel domain 2091 and a twelfth subpixel domain 2092.
  • the aspect ratio of the pixel partition does not change, but after the division, the number of trunk electrodes in the pixel partition increases, and the length also increases, the number of branch electrodes in the sub-pixel domain increases, and the length becomes shorter, which reduces the impedance of the entire pixel electrode.
  • the scanning signal of the same voltage passes through a pixel circuit
  • the switch TFT in the pixel circuit is turned on, the data signal will be applied to the pixel electrode faster, and the voltage attenuation of the data signal will be smaller, and the driving signal will be applied to the next pixel structure. Therefore, the entire pixel structure is displayed uniformly, so that the abnormal dark pattern of the pixel domain is avoided, and the display quality of the pixel is improved.
  • an embodiment of the present application provides a fifth structural schematic diagram of the distribution of pixel electrodes in a pixel structure 200.
  • the pixel structure 200 includes a first pixel partition, a second pixel partition, and a third pixel partition.
  • the areas of the first pixel partition, the second pixel partition and the third pixel partition are different, the second pixel partition has the largest area, and a horizontal trunk electrode is added in the second pixel partition, so that the trunk electrode in the second pixel partition is composed of
  • the linear type becomes a cross type, and the trunk electrodes in the first pixel sub-area and the third pixel sub-area are in a linear type.
  • the third pixel domain 206 and the fourth pixel domain 207 are arranged, the second pixel subregion further includes the pixel domain 2063 and the pixel domain 2073 arranged side by side, and the third pixel subregion includes the fifth pixel domain 208 and the sixth pixel domain 209 arranged side by side ,
  • the aspect ratio of the original pixel structure is the value of L2 divided by W2, as shown in Figure 9, taking the third pixel partition as an example, the aspect ratio of the third pixel partition is L21 divided by the value of W21, L21 divided by The value of W21 is different from the value of L2 divided by W2.
  • the value of L21 divided by W21 can be far less than the value of L2 divided by W2, and the aspect ratio of the pixel partition after segmentation is less than 3, so that the entire pixel domain The abnormal dark pattern is avoided, and the display quality of the pixel is improved.
  • the present application also provides partially enlarged figures 10 and 11 of the trunk electrode of the fourth notch and the pixel domain gap, the fourth notch and the fourth notch electrode 2034 are both rectangular, the long side of the fourth notch is L11, and the short side is W11 and L11 are larger than 14um, and W11 is larger than 6um.
  • the width of the main electrode 201 located in the pixel domain gap is W12, and W12 is larger than 6um.
  • an embodiment of the present application provides a simulation schematic diagram of a pixel dark pattern corresponding to the fifth structure of the pixel electrode distribution in the pixel structure 200 .
  • the present application further provides a liquid crystal panel 300 .
  • the liquid crystal panel 300 includes the pixel structure in the above-mentioned embodiment, and the liquid crystal panel 300 further includes an array substrate, and color arrays arranged in alignment with the array substrate.
  • the film substrate and the liquid crystal layer 302 located between the array substrate and the color filter substrate, the pixel electrodes 3019 are located on the surface of the array substrate, and a common electrode 3035 is provided on the side of the color filter substrate close to the liquid crystal layer 302 .
  • the array substrate includes a base substrate 3011, a first metal layer 3012 and a first metal layer 3013 are provided on the surface of the base substrate 3011, a first insulating layer 3014 is provided on the surface of the base substrate 3011, the first insulating layer 3014 covers the first metal layer 3012 and the first metal layer 3013, a polysilicon layer 3015 is arranged on the surface of the first insulating layer 3014, and a second metal layer 3016 and a second metal layer 3017 are arranged on the surface of the polysilicon layer 3015.
  • a second insulating layer 3018 covering the polysilicon layer 3015 is provided on the surface of the layer 3014, and a pixel electrode 3019 is prepared on the second insulating layer 3018.
  • the color filter substrate includes a base substrate 3031, and a color resist layer 3032, a color resist layer 3033 and a black matrix 3034 located on the color resist layer 3032 and the color resist layer 3033 are arranged on the surface of the base substrate 3031, and on the color resist layer 3032 and the color resist layer 3033 A common electrode 3035 is prepared on the surface, wherein the color resist layer 3032 and the color resist layer 3033 are preferably one color resist among red color resist, blue color resist or green color resist.
  • the present application provides a pixel structure and a liquid crystal panel.
  • the pixel structure includes a pixel electrode.
  • the pixel electrode includes a trunk electrode, a branch electrode connected to the trunk electrode, and a sealing electrode surrounding the trunk electrode and the branch electrode.
  • the trunk electrode is connected to at least one end of the branch electrode.
  • a sealing electrode wherein, a slit electrode is formed on the long side of the sealing electrode, the slit electrode extends into the pixel structure, and the pixel electrode is divided into at least two pixel partitions, so that the original one pixel partition becomes a plurality of pixel partitions,
  • the gap is used to reduce the aspect ratio of the pixel subregion, and the horizontal trunk electrode is added in the divided pixel subregion, and the subdivided pixel subregion is further divided into multiple pixel domains, which shortens the length of the branch electrodes and reduces the impedance of the pixel electrode.
  • the compensation capability of the liquid crystal driving signal is improved, so that the abnormal dark pattern of the entire pixel structure is avoided, and the display quality of the pixel structure is improved.

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  • Nonlinear Science (AREA)
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Abstract

本申请提供一种像素结构及液晶面板，像素电极包括主干电极、连接主干电极的分支电极、以及包围主干电极和分支电极的封口电极，主干电极与分支电极的至少一端连接封口电极；其中，封口电极的长边形成有豁口电极，豁口电极延伸至像素结构内，并将像素电极分割为至少两个像素分区，利用豁口降低像素分区的长宽比。

Description

一种像素结构及液晶面板 技术领域
本申请涉及显示技术领域，尤其涉及一种像素结构及液晶面板。
 背景技术
通常液晶显示面板由彩膜基板、薄膜晶体管基板、夹于彩膜基板与薄膜晶体管基板之间的液晶及密封框胶组成；其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。高垂直排列液晶驱动方式具有对比度高、开口率大以及液晶分子偏转速度快等特点，为目前主流市场上的TFT-LCD显示面板厂重点投资领域之一。
HVA技术要求液晶分子为负性液晶，在投入使用前需要用电场和聚合去对其进行配向，液晶像素是否配向异常取决于像素电极区域的形状，在像素分布区域长宽比较大时易发生配向异常，严重损害像素穿透率。如图1所示，现有技术中一种像素结构100，像素结构100为一个像素分区，该像素分区的长宽比为L1除以W1，像素分区包括田字型分布的像素畴103、像素畴104、像素畴105以及像素畴106，主干电极101分布在像素畴103、像素畴104、像素畴105以及像素畴106的间隙和外围，分支电极分布在像素畴103、像素畴104、像素畴105以及像素畴106内，并与主干电极101电性连接。图2为图1中的像素分区的长宽比为2.5:1情况下仿真的像素畴暗纹分布的仿真示意图，4条暗纹形成十字型，没有明显异常图形出现，液晶偏转正常，另外像素分区的长宽比为3:1情况下仿真的像素畴暗纹的分布示意图跟图2类似。图3为图1中的像素分区的长宽比为3.5:1情况下仿真的像素畴暗纹分布的仿真示意图，如图3所示，暗纹区107呈现非常明显的不规则扭曲，极大地增加了配向异常和显示异常的风险。
综上所述，需要设计出一种新的像素结构，以解决现有技术中的液晶配向异常和显示异常的问题，在设计液晶面板的像素时，由于金属走线挤占像素空间，像素电极区域常规设计色阻区下方，呈狭长的条状，且像素电极区域长宽比大3:1，容易产生不规则的液晶暗纹，原本十字形暗纹变为不规则扭曲的多条暗纹，增加液晶的配向异常的风险，进而严重影响液晶面板的使用功能，损害像素穿透率的技术问题。
 技术问题
本申请实施例提供一种像素结构及液晶面板，能够解决现有技术中在设计液晶面板的像素时，由于金属走线挤占像素空间，像素电极区域常规设计色阻区下方，呈狭长的条状，且像素电极区域长宽比大3:1，容易产生不规则的液晶暗纹，原本十字形暗纹变为不规则扭曲的多条暗纹，增加液晶的配向异常的风险，进而严重影响液晶面板的使用功能，损害像素穿透率的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种像素结构，包括像素电极，所述像素电极包括主干电极、连接所述主干电极的分支电极、以及包围所述主干电极和所述分支电极的封口电极，所述主干电极与所述分支电极的至少一端连接所述封口电极；其中，所述封口电极的长边形成有豁口电极，所述豁口电极延伸至所述像素结构内，并将所述像素电极分割为至少两个像素分区。
根据本申请一优选实施例，所述像素结构包括对向设置的第一像素分区和第二像素分区，所述第一像素分区与所述第二像素分区之间设置有第一豁口和第二豁口，所述豁口电极包括第一豁口电极和第二豁口电极，所述第一豁口电极填补所述第一豁口，所述第二豁口电极填补所述第二豁口。
根据本申请一优选实施例，所述像素结构还包括第三像素分区，所述第三像素分区与所述第二像素分区之间设置有第三豁口和第四豁口，所述豁口电极包括第三豁口电极和第四豁口电极，所述第三豁口电极填补所述第三豁口，所述第四豁口电极填补所述第四豁口。
根据本申请一优选实施例，所述第一豁口和所述第三豁口位于所述像素结构一侧的长边上，所述第二豁口和所述第四豁口位于所述像素结构另一侧的长边上。
根据本申请一优选实施例，所述第一像素分区、所述第二像素分区以及所述第三像素分区的长宽比小于3。
根据本申请一优选实施例，位于所述第一像素分区、所述第二像素分区以及所述第三像素分区间隙内的所述主干电极为直线型，该直线型主干电极与所述像素结构的长边平行。
根据本申请一优选实施例，所述主干电极为连续网格状结构。
根据本申请一优选实施例，所述第一像素分区、所述第二像素分区以及所述第三像素分区分别在垂直所述像素结构的长边上向对应的像素分区内新增一条横向主干电极，以使每个像素分区内的所述主干电极由直线型变为十字型，其中，十字型的主干电极将每个像素分区划分为4个子像素分区。
根据本申请一优选实施例，所述第一像素分区、所述第二像素分区以及所述第三像素分区的面积大小不同，在最大面积的像素分区内增加一条横向所述主干电极，以使最大面积的像素分区内的所述主干电极由直线型变为十字型，其余像素分区内的所述主干电极为直线型。
根据本申请一优选实施例，所述第一豁口、所述第二豁口、所述第三豁口和所述第四豁口均为矩形，该矩形的长边大于14mm，短边大于5mm。
根据本申请一优选实施例，所述第一像素分区、所述第二像素分区以及所述第三像素分区内的分支电极与主干电极均形成米子型。
依据上述像素结构，本申请提供一种液晶面板，所述液晶面板包括像素结构，所述像素结构包括像素电极，所述像素电极包括主干电极、连接所述主干电极的分支电极、以及包围所述主干电极和所述分支电极的封口电极，所述主干电极与所述分支电极的至少一端连接所述封口电极；其中，所述封口电极的长边形成有豁口电极，所述豁口电极延伸至所述像素结构内，并将所述像素电极分割为至少两个像素分区；
其中，所述像素结构包括对向设置的第一像素分区和第二像素分区，所述第一像素分区与所述第二像素分区之间设置有第一豁口和第二豁口，所述豁口电极包括第一豁口电极和第二豁口电极，所述第一豁口电极填补所述第一豁口，所述第二豁口电极填补所述第二豁口。
根据本申请一优选实施例，所述像素结构还包括第三像素分区，所述第三像素分区与所述第二像素分区之间设置有第三豁口和第四豁口，所述豁口电极还包括第三豁口电极和第四豁口电极，所述第三豁口电极填补所述第三豁口，所述第四豁口电极填补所述第四豁口。
根据本申请一优选实施例，所述第一豁口和所述第三豁口位于所述像素结构一侧的长边上，所述第二豁口和所述第四豁口位于所述像素结构另一侧的长边上。
根据本申请一优选实施例，所述第一像素分区、所述第二像素分区以及所述第三像素分区的长宽比小于3。
根据本申请一优选实施例，位于所述第一像素分区、所述第二像素分区以及所述第三像素分区间隙内的所述主干电极为直线型，该直线型主干电极与所述像素结构的长边平行。
根据本申请一优选实施例，所述主干电极为连续网格状结构。
根据本申请一优选实施例，所述第一像素分区、所述第二像素分区以及所述第三像素分区分别在垂直所述像素结构的长边上向对应的像素分区内新增一条横向主干电极，以使每个像素分区内的所述主干电极由直线型变为十字型，其中，十字型的主干电极将每个像素分区划分为4个子像素分区。
根据本申请一优选实施例，所述第一像素分区、所述第二像素分区以及所述第三像素分区的面积大小不同，在最大面积的像素分区内增加一条横向所述主干电极，以使最大面积的像素分区内的所述主干电极由直线型变为十字型，其余像素分区内的所述主干电极为直线型。
根据本申请一优选实施例，所述第一豁口、所述第二豁口、所述第三豁口和所述第四豁口均为矩形，该矩形的长边大于14mm，短边大于5mm。
 有益效果
本申请提供一种像素结构及液晶面板，像素结构包括像素电极，像素电极包括主干电极、连接主干电极的分支电极、以及包围主干电极和分支电极的封口电极，主干电极与分支电极的至少一端连接封口电极；其中，封口电极的长边形成有豁口电极，豁口电极延伸至像素结构内，并将像素电极分割为至少两个像素分区，使得原有的1个像素分区变成多个像素分区，利用豁口降低像素分区的长宽比，且在分割后的像素分区内增加横向主干电极，进一步将分割后的像素分区分割为多个像素畴，缩短了分支电极的长度，优化了像素电极的配向电场，提高液晶驱动信号的补偿能力，从而使整个像素结构的暗纹异常被规避，提高像素结构的显示品质。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中一种像素结构中像素电极分布的结构示意图。
图2为现有技术中一种像素结构中的像素分区的长宽比为2.5:1或3:1的液晶暗纹分布的仿真示意图。
图3为现有技术中一种像素结构中的像素分区的长宽比为3.5:1的液晶暗纹分布的仿真示意图。
图4为本申请实施例提供一种像素结构中的像素电极分布的第一结构示意图。
图5为本申请实施例提供一种像素结构中的像素电极分布的第二结构示意图。
图6为本申请实施例提供一种像素结构中的像素电极分布的第三结构示意图。
图7为本申请实施例提供一种像素结构中的像素电极分布的第四结构示意图。
图8为本申请实施例提供一种像素结构中的像素电极分布的第五结构示意图。
图9为图8中的像素结构的像素电极分布的第五结构中的第三像素分区结构示意图。
图10为图8中A处放大图。
图11为图8中B处放大图。
图12为本申请实施例提供一种像素结构中的像素电极分布的第五结构对应液晶暗纹分布的仿真示意图。
图13本申请实施例提供一种液晶面板膜层结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请针对现有技术中在设计液晶面板的像素时，由于金属走线挤占像素空间，像素电极区域常规设计色阻区下方，呈狭长的条状，且像素电极区域长宽比大3:1，容易产生不规则的液晶暗纹，原本长方形封边加米字型变为不规则扭曲的米字型，增加液晶的配向异常的风险，进而严重影响液晶面板的使用功能，损害像素穿透率的技术问题，本申请能够解决该缺陷。
通过多次仿真实验，发现像素电极ITO分布区域长宽比大于3时，像素分区中液晶配向产生不规则的液晶暗纹，会影响液晶面板的显示品质，为此，发明人通过多次仿真实验，发现在像素结构中增加豁口，将原本一个像素分区重新分割成多个像素分区，可以有效的改善液晶暗纹的情况，提高液晶面板的显示品质。
本申请提供一种像素结构，像素结构包括像素电极，像素电极包括主干电极、连接主干电极的分支电极、以及包围主干电极和分支电极的封口电极，主干电极与分支电极的至少一端连接封口电极；其中，封口电极的长边形成有豁口电极，豁口电极延伸至像素结构内，并将像素电极分割为至少两个像素分区，降低分割后像素分区的长宽比，且分割后像素分区的长宽比均小于3，豁口电极填补了缺失的像素电极，为豁口位置的液晶提供偏转电压，从而使整个像素的暗纹异常被规避，提高像素的显示品质。
如图4所示，本申请实施例提供一种像素结构200中的像素电极分布的第一结构示意图，该像素结构200包括像素电极，像素电极包括主干电极201、连接主干电极201的分支电极202、以及包围主干电极201和分支电极202的封口电极203，主干电极201、分支电极202以及封口电极203均为透明ITO薄膜，且主干电极201的透明ITO薄膜宽度大于5 um。主干电极201与分支电极202的至少一端连接有封口电极203；其中，封口电极203的两侧长边上分别形成有第一豁口电极2031和第二豁口电极2032，第一豁口电极2031和第一豁口电极2032均优选为长条形，且长条形的宽度优选大于或等于6um，第一豁口电极2031和第二豁口电极2032将像素电极分割为对向设置的第一像素分区和第二像素分区，第一像素分区与第二像素分区之间设置有第一豁口（在图4中用A表示）和第二豁口，第一豁口和第二豁口形状形同，也优选为矩形，该矩形的长边大于14um，短边大于5um。第一豁口电极2031填补第一豁口，第二豁口电极2032填补第二豁口，分割后的像素分区的形状与原本的像素分区的形状不同，合理设置豁口的尺寸，可以确保分割后的像素分区的长宽比都低于3，从而使整个像素的暗纹异常被规避，提高像素的显示品质。
具体地，第一像素分区包括并排设置的第一像素畴204和第二像素畴205，第二像素分区包括并排设置的第三像素畴206和第四像素畴207，第一像素畴204与第三像素畴206之间设置有第一豁口，第二像素畴205与第四像素畴207之间设置有第二豁口，分支电极202阵列设置在每个像素畴内，主干电极201围绕像素畴设置，主干电极201为连续网格状结构，优选采用一体成型，位于像素畴间隙的主干电极201为直线型。由于豁口的存在，改变分割后像素分区的形状，由于分割后像素分区与原本像素分区的形状不同，故分割后像素分区的长边可能与原本像素分区的长边不在一个方向上，通过合理设置豁口，可以实现分割后像素分区的长宽比小于L2除以W2的值，且分割后像素分区的长宽比优选小于3，从而使整个像素畴的暗纹异常被规避，提高像素的显示品质。
为了进一步降低分割后像素分区的长宽比，如图5所示，本申请实施例提供一种像素结构200中的像素电极分布的第二结构示意图，像素结构200还包括第三像素分区，第三像素分区与第二像素分区之间设置有第三豁口和第四豁口，豁口电极还包括第三豁口电极2033和第四豁口电极2034，第三豁口电极2033填补第三豁口，第四豁口电极2034填补第四豁口。具体地，第三像素分区包括并排设置的第五像素畴208和第六像素畴209，第三像素畴206与第五像素畴208之间设置有第三豁口，第四像素畴207与第六像素畴209之间设置有第四豁口，图5与图4比较，第三豁口和第四豁口进一步改变了分割后像素分区的形状，通过合理设置这些豁口，可以实现分割后像素分区的长宽比小于L2除以W2的值，且分割后像素分区的长宽比优选小于3，从而使整个像素畴的暗纹异常被规避，提高像素的显示品质。本实施例中的第一像素分区、第二像素分区以及第三像素分区内的分支电极与主干电极均优选形成米子型。
发明人通过仿真实验发生增加像素分区内的横向主干电极也可以进一步降低暗纹的影响程度。如图6所示，本申请实施例提供一种像素结构200中的像素电极分布的第三结构示意图，像素电极分布的第三结构是在第一结构中的每个像素分区内新增一条横向主干电极，横向主干电极贯穿该像素分区，新增横向主干电极与原有像素分区内的垂直主干电极形成十字型，即在垂直像素结构的长边上向对应的像素分区内新增一条横向主干电极，以使每个像素分区内的主干电极由直线型变为十字型，十字型的主干电极将每个像素分区划分为4个子像素分区，本实施例中的子像素分区等同于子像素畴。具体地，将第一像素分区和第二像素分区划分成田字型，第一像素畴204包括第一子像素畴2041和第二子像素畴2042，第二像素畴205包括第三子像素畴2051和第四子像素畴2052，第三像素畴206包括第五子像素畴2061和第六子像素畴2062，第四像素畴207包括第七子像素畴2071和第八子像素畴2072，图6与图4相比较，分割后像素分区的长宽比未变，但是分割后像素分区内主干电极的数量增加，长度也增加，子像素畴内的分支电极的数量增加，长度变短了，降低了整个像素电极的阻抗，在相同电压的扫描信号经过一个该像素电路时，打开像素电路中开关TFT后，数据信号会更快施加到像素电极上，且数据信号的电压衰减较小，对下一个像素结构施加驱动信号的影响较小，提高液晶驱动信号的补偿能力，因此整个像个像素结构显示均匀，使像素畴的暗纹异常被规避，提高像素的显示品质。
如图7所示，本申请实施例提供一种像素结构200中像素电极分布的第四结构示意图，像素电极分布的第四结构是在第二结构中的每个像素分区内增加一条横向主干电极，以使每个像素分区内的主干电极由直线型变为十字型，其中，十字型的主干电极将每个像素分区划分为4个子像素分区，本实施例中的子像素分区也等同于子像素畴。将第一像素分区、第二像素分区和第三像素分区划分成田字型，第一像素畴204包括第一子像素畴2041和第二子像素畴2042，第二像素畴205包括第三子像素畴2051和第四子像素畴2052，第三像素畴206包括第五子像素畴2061和第六子像素畴2062，第四像素畴207包括第七子像素畴2071和第八子像素畴2072，第五像素畴208包括第九子像素畴2081和第十子像素畴2082，第六像素畴209包括第十一子像素畴2091和第十二子像素畴2092，图7与图5相比较，分割后像素分区的长宽比未变，但是分割后像素分区内主干电极的数量增加，长度也增加，子像素畴内的分支电极的数量增加，长度变短了，降低了整个像素电极的阻抗，在相同电压的扫描信号经过一个该像素电路时，打开像素电路中开关TFT后，数据信号会更快施加到像素电极上，且数据信号的电压衰减较小，对下一个像素结构施加驱动信号的影响较小，因此整个像个像素结构显示均匀，使像素畴的暗纹异常被规避，提高像素的显示品质。
如图8所示，本申请实施例提供一种像素结构200中像素电极分布的第五结构示意图，像素结构200包括第一像素分区、第二像素分区以及第三像素分区，利用豁口分割后的第一像素分区、第二像素分区以及第三像素分区的面积大小不同，第二像素分区的面积最大，在第二像素分区内增加一条横向主干电极，以使第二像素分区内的主干电极由直线型变为十字型，第一像素分区和第三像素分区内的主干电极为直线型，第一像素分区包括并排设置的第一像素畴204和第二像素畴205，第二像素分区包括并排设置的第三像素畴206和第四像素畴207，第二像素分区还包括并排设置的像素畴2063和像素畴2073，第三像素分区包括并排设置的第五像素畴208和第六像素畴209，原本像素的结构的长宽比为L2除以W2的值，如图9所示，以第三像素分区为例，第三像素分区的长宽比为L21除以W21的值，L21除以W21的值与L2除以W2的值不同，通过合理设置豁口，可以实现L21除以W21的值远小于L2除以W2的值，分割后像素分区的长宽比小于3，从而使整个像素畴的暗纹异常被规避，提高像素的显示品质。
另外本申请还提供了第四豁口和像素畴间隙的主干电极的局部放大图10和图11，第四豁口和第四豁口电极2034均为矩形，第四豁口的长边为L11，短边为W11，L11大于14um，W11大于6um，位于像素畴间隙的主干电极201的宽度为W12，W12大于6um。
如图12所示，本申请实施例提供一种像素结构200中像素电极分布的第五结构对应像素暗纹仿真示意图，各个子像素畴之间未出现不规则的暗纹，暗纹形状均为多组十字形暗纹，像素显示正常，证明利用豁口分割像素分区，可以避免显示异常的问题。
依据上述像素结构，如图13所示，本申请还提供一种液晶面板300，该液晶面板300包括上述实施例中的像素结构，液晶面板300还包括阵列基板、与阵列基板对位设置的彩膜基板以及位于阵列基板与彩膜基板之间的液晶层302，像素电极3019位于阵列基板表面，彩膜基板靠近液晶层302一侧设置有公共电极3035。
具体地，阵列基板包括衬底基板3011，在衬底基板3011表面设置有第一金属层3012和第一金属层3013，在衬底基板3011表面设置有第一绝缘层3014，该第一绝缘层3014覆盖第一金属层3012和第一金属层3013，在第一绝缘层3014表面设置有多晶硅层3015，在多晶硅层3015表面设置有第二金属层3016和第二金属层3017，在第一绝缘层3014表面设置有覆盖多晶硅层3015的第二绝缘层3018，在第二绝缘层3018上制备像素电极3019。彩膜基板包括衬底基板3031，在衬底基板3031表面设置有色阻层3032、色阻层3033以及位于色阻层3032和色阻层3033黑色矩阵3034，在色阻层3032和色阻层3033表面制备有公共电极3035，其中，色阻层3032和色阻层3033优选红色色阻、蓝色色阻或绿色色阻中一种色阻。
本申请提供一种像素结构及液晶面板，像素结构包括像素电极，像素电极包括主干电极、连接主干电极的分支电极、以及包围主干电极和分支电极的封口电极，主干电极与分支电极的至少一端连接封口电极；其中，封口电极的长边形成有豁口电极，豁口电极延伸至像素结构内，并将像素电极分割为至少两个像素分区，使得原有的1个像素分区变成多个像素分区，利用豁口降低像素分区的长宽比，且在分割后的像素分区内增加横向主干电极，进一步将分割后的像素分区分割为多个像素畴，缩短了分支电极的长度，降低像素电极的阻抗，提高液晶驱动信号的补偿能力，从而使整个像素结构的暗纹异常被规避，提高像素结构的显示品质。
综上，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种像素结构，其包括像素电极，所述像素电极包括主干电极、连接所述主干电极的分支电极、以及包围所述主干电极和所述分支电极的封口电极，所述主干电极与所述分支电极的至少一端连接所述封口电极；其中，所述封口电极的长边形成有豁口电极，所述豁口电极延伸至所述像素结构内，并将所述像素电极分割为至少两个像素分区。
  2. 根据权利要求1所述的像素结构，其中，所述像素结构包括对向设置的第一像素分区和第二像素分区，所述第一像素分区与所述第二像素分区之间设置有第一豁口和第二豁口，所述豁口电极包括第一豁口电极和第二豁口电极，所述第一豁口电极填补所述第一豁口，所述第二豁口电极填补所述第二豁口。
  3. 根据权利要求2所述的像素结构，其中，所述像素结构还包括第三像素分区，所述第三像素分区与所述第二像素分区之间设置有第三豁口和第四豁口，所述豁口电极还包括第三豁口电极和第四豁口电极，所述第三豁口电极填补所述第三豁口，所述第四豁口电极填补所述第四豁口。
  4. 根据权利要求3所述的像素结构，其中，所述第一豁口和所述第三豁口位于所述像素结构一侧的长边上，所述第二豁口和所述第四豁口位于所述像素结构另一侧的长边上。
  5. 根据权利要求3所述的像素结构，其中，所述第一像素分区、所述第二像素分区以及所述第三像素分区的长宽比小于3。
  6. 根据权利要求3所述的像素结构，其中，位于所述第一像素分区、所述第二像素分区以及所述第三像素分区间隙内的所述主干电极为直线型，该直线型主干电极与所述像素结构的长边平行。
  7. 根据权利要求3所述的像素结构，其中，所述主干电极为连续网格状结构。
  8. 根据权利要求3所述的像素结构，其中，所述第一像素分区、所述第二像素分区以及所述第三像素分区分别在垂直所述像素结构的长边上向对应的像素分区内新增一条横向主干电极，以使每个像素分区内的所述主干电极由直线型变为十字型，其中，十字型的主干电极将每个像素分区划分为4个子像素分区。
  9. 根据权利要求3所述的像素结构，其中，所述第一像素分区、所述第二像素分区以及所述第三像素分区的面积大小不同，在最大面积的像素分区内增加一条横向所述主干电极，以使最大面积的像素分区内的所述主干电极由直线型变为十字型，其余像素分区内的所述主干电极为直线型。
  10. 根据权利要求3所述的像素结构，其中，所述第一豁口、所述第二豁口、所述第三豁口和所述第四豁口均为矩形，该矩形的长边大于14mm，短边大于5mm。
  11. 根据权利要求3所述的像素结构，其中，所述第一像素分区、所述第二像素分区以及所述第三像素分区内的分支电极与主干电极均形成米子型。
  12. 一种液晶面板，其包括像素结构，所述像素结构包括像素电极，所述像素电极包括主干电极、连接所述主干电极的分支电极、以及包围所述主干电极和所述分支电极的封口电极，所述主干电极与所述分支电极的至少一端连接所述封口电极；其中，所述封口电极的长边形成有豁口电极，所述豁口电极延伸至所述像素结构内，并将所述像素电极分割为至少两个像素分区；
    其中，所述像素结构包括对向设置的第一像素分区和第二像素分区，所述第一像素分区与所述第二像素分区之间设置有第一豁口和第二豁口，所述豁口电极包括第一豁口电极和第二豁口电极，所述第一豁口电极填补所述第一豁口，所述第二豁口电极填补所述第二豁口。
  13. 根据权利要求12所述的液晶面板，其中，所述像素结构还包括第三像素分区，所述第三像素分区与所述第二像素分区之间设置有第三豁口和第四豁口，所述豁口电极还包括第三豁口电极和第四豁口电极，所述第三豁口电极填补所述第三豁口，所述第四豁口电极填补所述第四豁口。
  14. 根据权利要求13所述的液晶面板，其中，所述第一豁口和所述第三豁口位于所述像素结构一侧的长边上，所述第二豁口和所述第四豁口位于所述像素结构另一侧的长边上。
  15. 根据权利要求13所述的液晶面板，其中，所述第一像素分区、所述第二像素分区以及所述第三像素分区的长宽比小于3。
  16. 根据权利要求13所述的液晶面板，其中，位于所述第一像素分区、所述第二像素分区以及所述第三像素分区间隙内的所述主干电极为直线型，该直线型主干电极与所述像素结构的长边平行。
  17. 根据权利要求13所述的液晶面板，其中，所述主干电极为连续网格状结构。
  18. 根据权利要求13所述的液晶面板，其中，所述第一像素分区、所述第二像素分区以及所述第三像素分区分别在垂直所述像素结构的长边上向对应的像素分区内新增一条横向主干电极，以使每个像素分区内的所述主干电极由直线型变为十字型，其中，十字型的主干电极将每个像素分区划分为4个子像素分区。
  19. 根据权利要求13所述的液晶面板，其中，所述第一像素分区、所述第二像素分区以及所述第三像素分区的面积大小不同，在最大面积的像素分区内增加一条横向所述主干电极，以使最大面积的像素分区内的所述主干电极由直线型变为十字型，其余像素分区内的所述主干电极为直线型。
  20. 根据权利要求13所述的液晶面板，其中，所述第一豁口、所述第二豁口、所述第三豁口和所述第四豁口均为矩形，该矩形的长边大于14mm，短边大于5mm。
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CN208156379U (zh) * 2018-02-26 2018-11-27 惠科股份有限公司 一种像素结构及阵列基板

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