WO2022126677A1 - 半导体检测装置及检测方法 - Google Patents

半导体检测装置及检测方法 Download PDF

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Publication number
WO2022126677A1
WO2022126677A1 PCT/CN2020/137912 CN2020137912W WO2022126677A1 WO 2022126677 A1 WO2022126677 A1 WO 2022126677A1 CN 2020137912 W CN2020137912 W CN 2020137912W WO 2022126677 A1 WO2022126677 A1 WO 2022126677A1
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light
measured
detection
incident light
wafer
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PCT/CN2020/137912
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English (en)
French (fr)
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李海鹏
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紫创(南京)科技有限公司
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Publication of WO2022126677A1 publication Critical patent/WO2022126677A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties

Definitions

  • the present invention relates to the technical field of semiconductor manufacturing, and in particular, to a semiconductor testing device and a testing method.
  • Bright-Field Inspection equipment has gradually been widely used in online inspection due to its high sensitivity in online inspection and its good applicability for batch inspection of products. usage of.
  • the technical problem solved by the present invention is to provide a semiconductor testing device and a testing method to improve the semiconductor testing device.
  • the technical solution of the present invention provides a semiconductor inspection device, comprising: a carrying device for carrying a wafer to be tested; an incident light system for emitting initial incident light; a first light splitting unit for The initial incident light is turned to be incident light that is perpendicular to the surface of the wafer to be tested, and is used to pass the reflected light formed by the incident light reflected by the wafer to be tested;
  • the reflected light polarization splitting is a first light to be measured and a second light to be measured, and the polarization direction of the first light to be measured and the polarization direction of the second light to be measured are different;
  • the first detection unit is used for according to The first to-be-measured light acquires first to-be-measured light detection information;
  • the second detection unit is configured to acquire second to-be-measured light detection information according to the second to-be-measured light.
  • the polarization splitting unit is used to polarize and split the reflected light into a first light to be measured and a second light to be measured, and the polarization direction of the first light to be measured is parallel to the surface of the wafer to be measured.
  • the polarization direction of the second light to be measured is parallel to the surface of the wafer to be measured, and the polarization direction of the first light to be measured and the polarization direction of the second light to be measured are perpendicular to each other.
  • the polarized light splitting unit is used to polarize and split the reflected light into a first light to be measured and a second light to be measured, and the propagation directions of the first light to be measured and the second light to be measured are also different. .
  • the first light splitting unit includes a light splitting prism.
  • the polarization beam splitting unit includes a polarization beam splitter prism.
  • a first filter configured to filter the first light to be measured, so that an optical signal with a wavelength within the first preset wavelength range in the first light to be measured passes through the a first filter, and transmits the filtered first light to be measured to the first detection unit.
  • it further includes: a second filter, configured to filter the second light to be measured, so that the optical signal with a wavelength within the second preset wavelength range in the second light to be measured passes through the a second optical filter, and transmits the filtered second light to be measured to the second detection unit.
  • a second filter configured to filter the second light to be measured, so that the optical signal with a wavelength within the second preset wavelength range in the second light to be measured passes through the a second optical filter, and transmits the filtered second light to be measured to the second detection unit.
  • the first preset wavelength range and the second preset wavelength range are different.
  • the first detection unit includes a first imaging sensor
  • the second detection unit includes a second imaging sensor
  • control system configured to obtain a first defect image according to the first light detection information to be measured, obtain first defect information according to the first defect image, and be further configured to obtain the first defect information according to the second A second defect image is obtained from the light detection information to be measured, and second defect information is obtained according to the second defect image.
  • the incident light system includes: a light source for emitting the first incident light; a filter unit for filtering the first incident light, so that the wavelength of the first incident light is within the third preset wavelength. It is assumed that the optical signal in the wavelength range passes through the filter unit to form the initial incident light.
  • a focusing unit configured to focus the incident light on the surface of the wafer to be tested or inside the wafer to be tested.
  • the technical solution of the present invention also provides a detection method using the above-mentioned semiconductor detection device, which includes: providing a wafer to be tested; emitting initial incident light; turning the initial incident light to be perpendicular to the wafer to be tested Incident light on a circular surface, and the incident light is reflected by the wafer to be tested to form reflected light; the reflected light is polarized and split into a first light to be measured and a second light to be measured, and the first light to be measured The polarization direction of the light to be measured is different from the polarization direction of the second light to be measured; the detection information of the first light to be measured is obtained according to the first light to be measured; the detection information of the second light to be measured is obtained according to the second light to be measured information.
  • the polarization direction of the first light to be measured is parallel to the surface of the wafer to be measured
  • the polarization direction of the second light to be measured is parallel to the surface of the wafer to be measured
  • the first light to be measured is parallel to the surface of the wafer to be measured.
  • the polarization direction of the measured light and the polarization direction of the second light to be measured are perpendicular to each other.
  • the propagation directions of the first light to be measured and the second light to be measured are different.
  • the method further includes: before acquiring the detection information of the first light to be measured according to the first light to be measured, filtering the light of the first light to be measured, so as to pass the wavelength of the first light to be measured in the first light.
  • Optical signals within a preset wavelength range.
  • the method further includes: before acquiring the detection information of the second light to be measured according to the second light to be measured, filtering the light of the second light to be measured, so that the wavelength of the second light to be measured is in the second light.
  • Optical signals within a preset wavelength range.
  • the first preset wavelength range and the second preset wavelength range are different.
  • it further includes: obtaining a first defect image according to the first light detection information to be measured; obtaining first defect information according to the first defect image; obtaining a second defect according to the second light detection information to be measured an image; the second defect image acquires second defect information.
  • the method for forming the initial incident light includes: emitting first incident light; filtering the first incident light, so as to pass the first incident light with a wavelength within a third preset wavelength range. signal to form the initial incident light.
  • the reflected light can be polarized and split in the optical path of the reflected light, forming the first light to be measured and the second light to be measured. , therefore, through the emission of the same incident light, in one scan detection, two optical signals of the light to be measured with different polarization states can be simultaneously formed.
  • the semiconductor detection device since the semiconductor detection device includes both the first detection unit and the second detection unit, the semiconductor detection device has two detection channels, and the two detection channels can detect different Optical signal (first light to be measured and second light to be measured).
  • the semiconductor inspection device can detect at least two different defects that can only be detected by optical signals of a specific polarization direction in one scanning inspection through the emission of the same incident light. Furthermore, the semiconductor inspection apparatus maintains high sensitivity for defect inspection, improves the efficiency of defect inspection, and improves the semiconductor inspection apparatus.
  • FIG. 1 to 3 are schematic structural diagrams of a semiconductor inspection device according to an embodiment of the present invention.
  • Figure 4 is an SEM image of one type of defect
  • Fig. 5 is the schematic diagram comparing the optical signal detection result of the defect in Fig. 4;
  • Figure 6 is an SEM image of another type of defect
  • Fig. 7 is the schematic diagram of the optical signal detection result comparison of the defect in Fig. 6;
  • FIG. 8 is a schematic structural diagram of a semiconductor testing device according to another embodiment of the present invention.
  • FIG. 9 is a schematic flowchart of a detection method according to an embodiment of the present invention.
  • the unpolarized light is emitted to the wafer to be tested, or the linearly polarized light or the circularly polarized light that simultaneously has two mutually perpendicular polarization components is emitted to the wafer to be tested.
  • the optical signal of the reflected light formed by the incident light reflected by the wafer to be tested, so as to monitor the defects of the wafer to be tested.
  • a detection channel (detector channel) is set in the optical path of the reflected light to receive the reflected light.
  • the wafer to be tested may have many different types of defects, and some of them require special optical signals to be detected, for example, some types of defects require optical signals with specific wavelengths to be detected. To be detected, other types of defects require optical signals with specific polarization directions to be detected, and some types of defects require optical signals with specific wavelengths and specific polarization directions to be detected at the same time. Therefore, the types of defects that can be detected by the bright field detection device in the above embodiments are limited, that is, the sensitivity of the bright field detection device is poor.
  • the incident light emitted to the wafer to be tested is processed by arranging a filter unit or a polarization unit in the optical path of the incident light. Therefore, the bright field detection device can detect more kinds of defects in the wafer to be tested, and the sensitivity of the bright field detection device is improved.
  • the wafer to be tested When detecting defects, the wafer to be tested must be scanned and inspected multiple times according to the types and quantities of the defects, which results in a long time for defect detection of the wafer to be tested and low detection efficiency.
  • the first defect and the second defect need to be detected on the wafer to be tested as an example, in which the first defect can be detected by the optical signal having the first polarization direction, and the second defect can be detected by the Optical signal detection in two polarization directions.
  • the wafer to be tested needs to be inspected for the first defect and the second defect, in the above brightfield inspection device, the wafer to be tested needs to be scanned and inspected twice. Therefore, the detection time of the wafer to be tested increases exponentially, resulting in too long detection time and low detection efficiency.
  • the semiconductor testing device includes: a carrying device for carrying the wafer to be tested; an incident light system for emitting initial incident light; The incident light on the surface of the wafer is used to pass the reflected light reflected by the incident light through the wafer to be measured; the polarization splitting unit is used to polarize and split the reflected light into a first light to be measured and a second light to be measured.
  • the semiconductor inspection device is an improvement on the existing semiconductor inspection device, and the inspection method using the semiconductor inspection device is also improved.
  • 1 to 3 are schematic structural diagrams of a semiconductor inspection device according to an embodiment of the present invention.
  • the semiconductor inspection device includes:
  • the first spectroscopic unit 300 is used to turn the initial incident light 201 into the incident light 301 that is perpendicular to the surface of the wafer 101 to be tested, and is used to reflect the incident light 301 through the wafer to be tested.
  • the polarization beam splitting unit 400 is used to polarize the reflected light 302 into a first light to be measured 401 and a second light to be measured 402, and the polarization direction of the first light to be measured 401 and the second light to be measured 401
  • the polarization direction of 402 is different;
  • a first detection unit 510 configured to acquire the detection information of the first light to be measured according to the first light to be measured 401;
  • the second detection unit 520 is configured to acquire the detection information of the second light to be measured according to the second light to be measured 402 .
  • the polarization beam splitting unit 400 can polarize and split the reflected light 302 in the optical path of the reflected light 302, the first light to be measured 401 and the second light to be measured 402 are formed.
  • the emission of the incident light 301 can simultaneously form two optical signals of the light to be measured with different polarization states in one scan detection.
  • the semiconductor detection device since the semiconductor detection device includes the first detection unit 510 and the second detection unit 520 at the same time, the semiconductor detection device has two detection channels, and the two detection channels can simultaneously detect Different optical signals (the first light to be measured 401 and the second light to be measured 402 ).
  • the semiconductor inspection device can detect at least two different defects that can only be detected by optical signals of a specific polarization direction in one scanning inspection through the same incident light 301 emission. Furthermore, the semiconductor inspection apparatus maintains high sensitivity for defect inspection, improves the efficiency of defect inspection, and improves the semiconductor inspection apparatus.
  • the incident light system 200 includes: a light source 210 for emitting first incident light 202; a filter unit 220 for filtering the first incident light 202, so that the first incident light 202 is filtered.
  • An optical signal with a wavelength in the third preset wavelength range in the incident light 202 passes through the filter unit 220 to form the initial incident light 201 .
  • the light source 210 emits the first incident light 202, and then the filter unit 220 filters the first incident light 202 to form an initial wavelength within the third preset wavelength range. Incident light 201 .
  • the semiconductor inspection device can detect: defect types that require an optical signal with a wavelength within the third preset wavelength range to be detected.
  • the filter unit 220 includes a filter.
  • the first incident light 202 emitted by the light source 210 is unpolarized light, or linearly polarized or circularly polarized positive light having two mutually perpendicular polarization components at the same time.
  • the first light splitting unit 300 turns the initial incident light 201 into the incident light that is perpendicular to the surface of the wafer 101 to be tested.
  • Light 301 After the incident light 201 is reflected by the wafer to be tested 101 , a reflected light 302 is formed and reflected toward the first spectroscopic unit 300 .
  • the first light splitting unit 300 receives and passes the reflected light 302 .
  • the incident light 301 is vertically incident on the surface of the wafer 101 to be tested, the incident light 301 and the reflected light 302 are actually between the normal line perpendicular to the surface of the wafer to be tested 101 on the basis of opposite propagation directions. 3 lines in one.
  • line segments with parallel arrows are schematically used to represent the incident light 301 and the reflected light 302 , respectively.
  • the first light splitting unit 300 includes a light splitting prism.
  • the reflected light 302 passing through the first beam splitting unit 300 is polarized and split into a first light to be measured 401 and a second light to be measured 402, and the first light to be measured 401 and the polarization direction of the second light to be measured 402 is different. Therefore, through the polarization beam splitting unit 400, the polarization control of the reflected light 302 can be performed while splitting, so as to form two polarized lights that cannot be connected to each other, which can be used to simultaneously detect at least two different polarization directions that can be separated by a specific polarization direction. detected defects.
  • the polarization beam splitting unit 400 is used to polarize and split the reflected light 302 into a first light to be measured 401 and a second light to be measured 402 .
  • the polarization direction of a light to be measured 401 is parallel to the surface of the wafer to be measured 101
  • the polarization direction of the second light to be measured 402 is parallel to the surface of the wafer to be measured 101
  • the first light to be measured 401 The polarization direction of , and the polarization direction of the second light to be measured 402 are perpendicular to each other.
  • the first light to be measured 401 is a horizontally polarized optical signal (direction H shown in FIG. 1 ), and the first light to be measured 401 is a horizontally polarized optical signal (direction H shown in FIG.
  • the second light to be measured 402 is a vertically polarized optical signal (direction V as shown in FIG. 1 ).
  • the first light to be measured may also be a vertically polarized optical signal
  • the second light to be measured is a horizontally polarized optical signal
  • the propagation directions of the first light to be measured 401 and the second light to be measured 402 are also different.
  • the polarization beam splitting unit 400 includes a polarization beam splitter prism.
  • the first detection unit 510 obtains the first light to be measured detection information according to the first light to be measured 401
  • the second detection unit 520 obtains the second light to be measured according to the second light to be measured 402 .
  • the first detection unit 510 includes a first imaging sensor (not shown).
  • the second detection unit 520 includes a second imaging sensor (not shown).
  • the signal intensity of the optical signals of the incident light and the reflected light that are vertically polarized is much lower than the signal intensity of the optical signals that are polarized parallel to each other in the incident light and the reflected light. Therefore, the effect of detecting defects by polarization separation of reflected light 302 in this embodiment can be equivalent to the method of detecting defects by polarization separation of incident light in the brightfield detection device of the above-mentioned other embodiment Effect.
  • FIG. 4 is an image of one type of SEM defect
  • FIG. 5 is a schematic diagram comparing the optical signal detection results of the defect in FIG. 4
  • FIG. 6 is another type of defect.
  • FIG. 7 is a schematic diagram comparing the optical signal detection results of the defect in FIG. 6 .
  • the optical signal H in /N out in which the incident light is horizontally polarized and the polarization control is not performed on the reflected light (in the detection method adopted by the brightfield detection device of the above-mentioned another embodiment) is respectively adopted.
  • the optical signal to be measured), the reflected light is an optical signal N in /H out (the first light to be measured 401 in this embodiment), the reflected light is horizontally polarized and the polarization control is not performed on the incident light, and the incident light is vertically polarized and no polarization control is performed on the reflected light.
  • the polarization-controlled optical signal V in /N out (the optical signal to be measured in the detection method adopted by the brightfield detection device of the above-mentioned another embodiment), the reflected light is vertically polarized and the incident light is not polarization-controlled optical signal N in /V out (the second light to be measured 402 in this embodiment), the incident light is horizontally polarized and the reflected light is vertically polarized optical signal H in /V out (one of the mutually parallel polarized optical signals) , and the incident light is vertically polarized and the reflected light is the horizontally polarized optical signal V in /H out (the other of the mutually parallel polarized optical signals), defect detection was performed.
  • the signal-to-noise ratio and the signal intensity of the detection results using the optical signal H in /N out and the optical signal N in /H out are high, and the optical signal H in /N out and the optical signal N are used
  • the detection results of in /H out are close to each other, which can clearly reflect the defect 111 .
  • the detection results using the optical signal V in /N out and the optical signal N in /V out are close, but the signal-to-noise ratio and signal strength are lower , the defect 111 cannot be clearly reflected, that is, it is not suitable for detecting the defect type in FIG. 4 .
  • the signal-to-noise ratio and the signal intensity in the detection results using the optical signal H in /V out and the optical signal V in /H out are very low, and the defect 111 cannot be reflected at all.
  • the optical signal H in /N out , the optical signal N in /H out , the optical signal V in /N out , the optical signal N in /V out , the optical signal The signal H in /V out , and the optical signal V in /H out perform defect detection.
  • the signal-to-noise ratio and the signal strength of the detection results using the optical signal Vin /N out and the optical signal N in /V out are high, and the optical signal V in /N out and the optical signal N are used
  • the detection results of in /V out are close to each other, which can clearly reflect the defect 112 .
  • the detection results using the optical signal H in /N out and the optical signal N in /H out are close, but the signal-to-noise ratio and signal strength are lower , which cannot clearly reflect the defect 112 , that is, it is not suitable for detecting the defect type in FIG. 5 .
  • the signal-to-noise ratio and the signal intensity in the detection results using the optical signal H in /V out and the optical signal V in /H out are also very low, and the defect 112 cannot be reflected at all.
  • the sensitivity of defect detection of the semiconductor inspection apparatus in this embodiment can be equivalent to the sensitivity of defect detection of the bright field inspection apparatus of the above-mentioned another embodiment.
  • the semiconductor inspection apparatus further includes: a control system 600 configured to obtain a first defect image according to the first light detection information to be measured, and obtain a first defect image according to the first defect image
  • the defect information is further used to obtain a second defect image according to the second light detection information to be measured, and obtain second defect information according to the second defect image.
  • control system 600 includes an image computing unit 610 for obtaining a first defect image according to the first light detection information to be measured, and for obtaining a defect image according to the second light detection information to be measured Second defect image.
  • image computing unit 610 for obtaining a first defect image according to the first light detection information to be measured, and for obtaining a defect image according to the second light detection information to be measured Second defect image.
  • control system 600 further includes a defect determination unit 620: configured to obtain first defect information according to the first defect image, and configured to obtain second defect information according to the second defect image.
  • a defect determination unit 620 configured to obtain first defect information according to the first defect image, and configured to obtain second defect information according to the second defect image.
  • the semiconductor inspection apparatus further includes: a focusing unit 700 (as shown in FIG. 1 ) for focusing the incident light 301 on the surface of the wafer 101 to be tested or inside the wafer 101 to be tested.
  • a focusing unit 700 (as shown in FIG. 1 ) for focusing the incident light 301 on the surface of the wafer 101 to be tested or inside the wafer 101 to be tested.
  • the focusing unit 700 includes a focusing lens and the like.
  • the semiconductor detection device filters the first light to be measured and the second light to be measured, instead of filtering the incident light.
  • the semiconductor detection device includes an incident light system 230
  • the incident light system 230 includes: a light source (not shown) for emitting the initial incident light 211
  • the The initial incident light 211 includes two or more optical signals in different preset wavelength ranges.
  • the initial incident light 211 is turned by the first spectroscopic unit 300 to be incident light 311 perpendicular to the surface of the wafer 101 to be tested, and the incident light 311 passes through the wafer 101 to be tested The reflection of , forms reflected light 312 .
  • the first light splitting unit 300 receives and passes the reflected light 312 .
  • the reflected light 312 passing through the first beam splitting unit 300 is polarized and split into a first light to be measured 411 and a second light to be measured 412 .
  • the difference between the first light to be measured 411 in this embodiment and the first light to be measured 401 in the embodiments shown in FIGS. 1 to 3 is that since the semiconductor detection device in this embodiment does not filter the incident light 211, Therefore, the first light to be measured 411 includes optical signals with wavelengths within at least two or more different preset wavelength ranges.
  • the difference between the second light to be measured 412 in this embodiment and the second light to be measured 402 in the embodiments shown in FIGS. 1 to 3 is that the second light to be measured 412 includes wavelengths between at least two Optical signals in different preset wavelength ranges above.
  • the semiconductor detection device further includes: a first filter 410 for filtering the first light to be measured 411 so that the wavelength of the first light to be measured 411 is within the first pre-measured wavelength
  • the optical signal in the wavelength range is set to pass through the first filter, and the filtered first light to be measured 413 is transmitted to the first detection unit 510;
  • the second filter 420 is used to detect the The second light to be measured 412 is filtered, so that the optical signal in the second light to be measured 412 whose wavelength is within the second preset wavelength range passes through the second filter 420 , and the filtered second light to be measured is filtered.
  • the photometry 414 is transmitted to the second detection unit 520 .
  • the semiconductor detection device further includes a first filter 410 for filtering the first light to be measured 411, and a second filter 420 for filtering the second light to be measured 412, at least two types of Defects that require optical signals of special wavelengths and specific polarization directions to be detected at the same time can also be detected by the semiconductor inspection device. Therefore, the semiconductor inspection device improves the efficiency of defect inspection and also improves the sensitivity.
  • the semiconductor detection device may include a first filter or a second filter, so that one of the two detection channels can detect optical signals that require a specific wavelength and a specific polarization direction at the same time.
  • the detected defects thus, enable the semiconductor inspection device to better balance defect inspection efficiency and manufacturing cost.
  • the carrying device 100 includes: a carrying tray (not shown) for carrying the wafer 101 to be tested; a fixing device (not shown) disposed on the carrying tray for carrying the wafer 101 to be tested
  • the wafer 101 is fixed on the carrier plate.
  • the fixing device is a vacuum suction cup or a buckle fixed on the edge of the carrier disc.
  • an embodiment of the present invention also provides a detection method using the above semiconductor detection device, please refer to FIG. 9 , including:
  • Step S1 providing a wafer to be tested
  • Step S2 emitting initial incident light
  • Step S3 turning the initial incident light into incident light perpendicular to the surface of the wafer to be tested, and the incident light is reflected by the wafer to be tested to form reflected light;
  • Step S4 splitting the reflected light into a first light to be measured and a second light to be measured, and the polarization direction of the first light to be measured and the polarization direction of the second light to be measured are different;
  • Step S5 acquiring first light to be measured detection information according to the first light to be measured
  • Step S6 acquiring second light to be measured detection information according to the second light to be measured.
  • the method for forming the initial incident light 201 includes: emitting the first incident light 202 ; filtering the first incident light 202 to pass the wavelength of the first incident light 202 in the Optical signals within three preset wavelength ranges form the initial incident light 201 .
  • the first incident light 202 emitted by the light source 210 is unpolarized light, or linearly polarized or circularly polarized positive light having two mutually perpendicular polarization components at the same time.
  • the initial incident light 211 is emitted, and the initial incident light 211 includes two or more optical signals in different preset wavelength ranges.
  • the detection method further includes: focusing the incident light 301 on the surface of the wafer to be tested 101 or inside the wafer to be tested 101 .
  • the initial incident light 211 is turned to be incident light 311 perpendicular to the surface of the wafer under test 101 , and the incident light 311 passes through the wafer under test.
  • the reflection of 101 forms reflected light 312 .
  • the reflected light 302 is polarized and split into a first light to be measured 401 and a second light to be measured 402 , and the polarization direction of the first light to be measured 401 and the direction of polarization of the second light to be measured 402 different polarization directions.
  • the polarization direction of the first light to be measured 401 is parallel to the surface of the wafer to be measured 101
  • the polarization direction of the second light to be measured 402 is parallel to the wafer to be measured.
  • the surfaces of 101 are parallel
  • the polarization direction of the first light to be measured 401 and the polarization direction of the second light to be measured 402 are perpendicular to each other.
  • the first light to be measured 401 is a horizontally polarized optical signal (direction H shown in FIG. 1 ), the first light to be measured 401 is a horizontally polarized optical signal
  • the second light to be measured 402 is a vertically polarized optical signal (direction V as shown in FIG. 1 ).
  • the first light to be measured may also be a vertically polarized optical signal
  • the second light to be measured is a horizontally polarized optical signal
  • the propagation directions of the first light to be measured 401 and the second light to be measured 402 are also different.
  • the first light to be measured detection information is obtained according to the first light to be measured 401
  • the second light to be measured detection information is obtained according to the second light to be measured 402 .
  • the detection method further includes: acquiring a first defect image according to the first light detection information to be measured; and acquiring first defect information according to the first defect image.
  • the detection method further includes: acquiring a second defect image according to the second light detection information to be measured; and acquiring second defect information according to the second defect image.
  • the reflected light 312 is polarized and split into a first light to be measured 411 and a second light to be measured 412 .
  • the polarization directions and propagation directions of the first light to be measured 411 and the first light to be measured 401 (as shown in FIG. 1 ) are the same, and the second light to be measured 412 and the second light to be measured 402 (as shown in FIG. 1 ) are the same.
  • the polarization direction and propagation direction shown in ) are the same, and will not be repeated here.
  • the detection method further includes: filtering the first light to be measured 411 to pass an optical signal whose wavelength is within a first preset wavelength range in the first light to be measured 411;
  • the light to be measured 412 is filtered to pass the optical signal whose wavelength is within the second preset wavelength range in the second light to be measured 412;
  • the detection information of the first light to be measured is acquired according to the filtered first light to be measured 413 , obtain second light detection information to be measured according to the filtered second light to be measured 414; obtain a first defect image according to the first light detection information to be measured; obtain first defect information according to the first defect image;
  • the first preset wavelength range and the second preset wavelength range are different.
  • the detection method includes: filtering the first light to be measured 411 to pass an optical signal whose wavelength is within a first preset wavelength range in the first light to be measured 411 .
  • the second light to be measured 412 is filtered to pass the optical signal whose wavelength is within the second preset wavelength range in the second light to be measured 412 .

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

一种半导体检测装置及检测方法，其中，半导体检测装置包括：承载装置（100），用于承载待测晶圆（101）；入射光系统（200），用于发射初始入射光（201）；第一分光单元（300），用于将初始入射光（201）转向为垂直入射待测晶圆（101）表面的入射光（301），并用于通过由入射光（301）经待测晶圆（101）反射而成的反射光（302）；偏振分光单元（400），用于将反射光（302）偏振分光为第一待测光（401）和第二待测光（402），且第一待测光（401）的偏振方向和第二待测光（402）的偏振方向不同；第一检测单元（510），用于根据第一待测光（401）获取第一待测光检测信息；第二检测单元（520），用于根据第二待测光（402）获取第二待测光检测信息。

Description

半导体检测装置及检测方法
本申请要求2020年12月14日提交中国专利局、申请号为2020114622388、发明名称为“半导体检测装置及检测方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及半导体制造技术领域，尤其涉及一种半导体检测装置及检测方法。
背景技术
在半导体制程中，容易因工艺或材料上的缺陷造成器件良率下降，并导致生产成本提高。特别是随着电路关键尺寸的不断缩小，其对工艺控制的要求就越来越严格。为了能在实际生产过程中及时发现和解决问题，通常需要配置有高灵敏度的光学和电子束的缺陷检测装置对产品进行在线检测，然后，通过电子显微镜等缺陷观察设备对缺陷进行成像和元素成分的分析。
在现有的光学检测装置中，明场检测(Bright-Field Inspection)设备由于在在线检测中展现的高灵敏度、以及对于产品的批量检测的具有较好的适用性，逐渐在在线检测中受到广泛的使用。
然而，现有的光学检测装置的仍然有待改善。
发明内容
本发明解决的技术问题是提供一种半导体检测装置及检测方法，以改善半导体检测装置。
为解决上述技术问题，本发明的技术方案提供一种半导体检测装置，包括：承载装置，用于承载待测晶圆；入射光系统，用于发射初始入射光；第一分光单元，用于将所述初始入射光转向为垂直入射所 述待测晶圆表面的入射光，并用于通过由所述入射光经所述待测晶圆反射而成的反射光；偏振分光单元，用于将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光的偏振方向和所述第二待测光的偏振方向不同；第一检测单元，用于根据所述第一待测光获取第一待测光检测信息；第二检测单元，用于根据所述第二待测光获取第二待测光检测信息。
可选的，所述偏振分光单元用于将所述反射光偏振分光为第一待测光和第二待测光，所述第一待测光的偏振方向与所述待测晶圆表面平行，所述第二待测光的偏振方向与所述待测晶圆表面平行，且所述第一待测光的偏振方向与所述第二待测光的偏振方向之间互相垂直。
可选的，所述偏振分光单元用于将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光和第二待测光的传播方向也不同。
可选的，所述第一分光单元包括分光棱镜。
可选的，所述偏振分光单元包括偏振分光棱镜。
可选的，还包括：第一滤光器，用于对所述第一待测光滤光，使所述第一待测光中波长在第一预设波长范围内的光学信号通过所述第一滤光器，并将滤光后的第一待测光传输至所述第一检测单元。
可选的，还包括：第二滤光器，用于对所述第二待测光滤光，使所述第二待测光中波长在第二预设波长范围内的光学信号通过所述第二滤光器，并将滤光后的第二待测光传输至所述第二检测单元。
可选的，所述第一预设波长范围和所述第二预设波长范围不同。
可选的，所述第一检测单元包括第一成像传感器，所述第二检测单元包括第二成像传感器。
可选的，还包括：控制系统，用于根据所述第一待测光检测信息获取第一缺陷图像，并根据所述第一缺陷图像获取第一缺陷信息，还 用于根据所述第二待测光检测信息获取第二缺陷图像，并根据所述第二缺陷图像获取第二缺陷信息。
可选的，所述入射光系统包括：光源，用于发射第一入射光；滤光单元，用于对所述第一入射光滤光，使所述第一入射光中波长在第三预设波长范围内的光学信号通过所述滤光单元，形成所述初始入射光。
可选的，还包括：聚焦单元，用于将入射光聚焦于所述待测晶圆表面或待测晶圆内。
相应的，本发明的技术方案还提供一种采用上述半导体检测装置进行的检测方法，包括：提供待测晶圆；发射初始入射光；将所述初始入射光转向为垂直入射所述待测晶圆表面的入射光，且所述入射光经所述待测晶圆的反射形成反射光；将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光的偏振方向和所述第二待测光的偏振方向不同；根据所述第一待测光获取第一待测光检测信息；根据所述第二待测光获取第二待测光检测信息。
可选的，所述第一待测光的偏振方向与所述待测晶圆表面平行，所述第二待测光的偏振方向与所述待测晶圆表面平行，且所述第一待测光的偏振方向与所述第二待测光的偏振方向之间互相垂直。
可选的，所述第一待测光和第二待测光的传播方向不同。
可选的，还包括：根据所述第一待测光获取第一待测光检测信息前，对所述第一待测光滤光，以通过所述第一待测光中波长在第一预设波长范围内的光学信号。
可选的，还包括：根据所述第二待测光获取第二待测光检测信息前，对所述第二待测光滤光，以通过所述第二待测光中波长在第二预设波长范围内的光学信号。
可选的，所述第一预设波长范围和所述第二预设波长范围不同。
可选的，还包括：根据所述第一待测光检测信息获取第一缺陷图像；根据所述第一缺陷图像获取第一缺陷信息；根据所述第二待测光检测信息获取第二缺陷图像；所述第二缺陷图像获取第二缺陷信息。
可选的，形成所述初始入射光的方法包括：发射第一入射光；对所述第一入射光滤光，以通过所述第一入射光中波长在第三预设波长范围内的光学信号，形成所述初始入射光。
与现有技术相比，本发明的技术方案具有以下有益效果：
本发明的技术方案提供的半导体检测装置中，一方面，由于通过偏振分光单元，能够在反射光的光路中，对反射光进行偏振和分光，形成了第一待测光和第二待测光，因此，通过同1次入射光的发射，在1次扫描检测中，能够同时形成具有不同偏振状态的2个待测光的光信号。另一方面，由于所述半导体检测装置同时包括第一检测单元和第二检测单元，因此，所述半导体检测装置具有2个检测通道，并且，所述2个检测通道能够同时分别检测到不同的光学信号(第一待测光和第二待测光)。从而，所述半导体检测装置能够通过同1次入射光的发射，且在1次扫描检测中，针对至少2种不同的、且需要特定偏振方向的光学信号才能被检测出的缺陷进行检测。进而，所述半导体检测装置在对于缺陷检测保持高灵敏度的同时，提高了缺陷检测的效率，改善了半导体检测装置。
附图说明
图1至图3是本发明一实施例的半导体检测装置的结构示意图；
图4是一种类型的缺陷的SEM图像；
图5是图4中的缺陷的光学信号检测结果比较示意图；
图6是另一种类型的缺陷的SEM图像；
图7是图6中的缺陷的光学信号检测结果比较示意图；
图8是本发明另一实施例的半导体检测装置的结构示意图；
图9是本发明一实施例的检测方法的流程示意图。
具体实施方式
如背景技术所述，现有的光学检测装置的仍然有待改善。
具体而言，在一个实施例的明场检测装置中，通过向待测晶圆发射非偏振光，或是向待测晶圆发射同时具有两种相互垂直偏振分量的线偏振光或者圆偏振光，并通过对所述入射光经过待测晶圆反射所形成的反射光的光信号进行检测，以监控待测晶圆的缺陷。通常为了对所述反射光的光信号进行检测，所述明场检测装置中，会在所述反射光的光路中设置1路检测通道(detector channel)，以接收所述反射光。
然而，由于待测晶圆中可能具有多种不同类型的缺陷，并且，其中一些种类的缺陷需要通过特殊的光学信号才能被检测出，例如，一些种类的缺陷需要通过具有特定波长的光学信号才能被检测出，另一些种类的缺陷需要通过具有特定偏振方向的光学信号才能被检测出，还有一些种类的缺陷则需要同时通过具有特定波长和特定偏振方向的光学信号才能被检测出。因此，上述实施例中的明场检测装置，能够检测到的缺陷种类受到限制，即，所述明场检测装置的灵敏度较差。
为了提高明场检测装置的灵敏度，在另一个实施例的明场检测装置中，通过在入射光的光路中，设置滤波单元或偏振单元，对向待测晶圆发射的入射光进行了处理，从而，所述明场检测装置能够检测到待测晶圆中更多种类的缺陷，提高了明场检测装置的灵敏度。
然而，在上述明场检测装置中，由于在每次的待测晶圆的缺陷的检测中，仅能检测一种光学信号，因此，当需要针对多种需要特殊的光学信号才能被检测出的缺陷进行检测时，必须根据所述缺陷的种类数量，对待测晶圆进行多次扫描检测，从而，造成待测晶圆的缺陷检测的时间太长，检测效率低。具体而言，以需要对待测晶圆进行第一缺陷和第二缺陷的检测为例，进行说明，其中，第一缺陷能够被具有第一偏振方向的光学信号检测，第二缺陷能够被具有第二偏振方向的 光学信号检测。当需要对待测晶圆进行第一缺陷和第二缺陷的检测时，在上述明场检测装置中，需要分别对待测晶圆进行两次扫描检测。从而，待测晶圆检测的时间成倍增加，造成检测时间太长，检测效率低。
为解决所述技术问题，本发明实施例提供了一种半导体检测装置及检测方法。其中，半导体检测装置包括：承载装置，用于承载待测晶圆；入射光系统，用于发射初始入射光；第一分光单元，用于将所述初始入射光转向为垂直入射所述待测晶圆表面的入射光，并用于通过由所述入射光经所述待测晶圆反射而成的反射光；偏振分光单元，用于将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光的偏振方向和所述第二待测光的偏振方向不同；第一检测单元，用于根据所述第一待测光获取第一待测光检测信息；第二检测单元，用于根据所述第二待测光获取第二待测光检测信息。所述半导体检测装置是对现有的半导体检测装置的改善，采用了所述半导体检测装置的检测方法也得到了改善。
为使本发明的上述目的、特征和有益效果能够更为明显易懂，下面结合附图对本发明的具体实施例做详细的说明。
图1至图3是本发明一实施例的半导体检测装置的结构示意图。
首先，请参考图1，所述半导体检测装置包括：
承载装置100，用于承载待测晶圆101；
入射光系统200，用于发射初始入射光201；
第一分光单元300，用于将所述初始入射光201转向为垂直入射所述待测晶圆101表面的入射光301，并用于通过由所述入射光301经所述待测晶圆反射而成的反射光302；
偏振分光单元400，用于将所述反射光302偏振分光为第一待测光401和第二待测光402，且所述第一待测光401的偏振方向和所述第二待测光402的偏振方向不同；
第一检测单元510，用于根据所述第一待测光401获取第一待测光检测信息；
第二检测单元520，用于根据所述第二待测光402获取第二待测光检测信息。
一方面，由于通过偏振分光单元400，能够在反射光302的光路中，对反射光302进行偏振和分光，形成了第一待测光401和第二待测光402，因此，通过同1次入射光301的发射，在1次扫描检测中，能够同时形成具有不同偏振状态的2个待测光的光信号。另一方面，由于所述半导体检测装置同时包括第一检测单元510和第二检测单元520，因此，所述半导体检测装置具有2个检测通道，并且，所述2个检测通道能够同时分别检测到不同的光学信号(第一待测光401和第二待测光402)。从而，所述半导体检测装置能够通过同1次入射光301的发射，且在1次扫描检测中，针对至少2种不同的、且需要特定偏振方向的光学信号才能被检测出的缺陷进行检测。进而，所述半导体检测装置在对于缺陷检测保持高灵敏度的同时，提高了缺陷检测的效率，改善了半导体检测装置。
以下将结合附图进行详细说明。
请参考图1和图2，所述入射光系统200包括：光源210，用于发射第一入射光202；滤光单元220，用于对所述第一入射光202滤光，使所述第一入射光202中波长在第三预设波长范围内的光学信号通过所述滤光单元220，形成所述初始入射光201。
具体的，所述光源210发射出第一入射光202，接着，通过所述滤光单元220，对所述第一入射光202滤光，形成波长在所述第三预设波长范围内的初始入射光201。
从而，所述半导体检测装置能够检测出：需要波长在第三预设波长范围内的光学信号才能够被检测的缺陷类型。
在本实施例中，所述滤光单元220包括滤光片。
在本实施例中，光源210所发射出的第一入射光202为非偏振光、或是同时具有两种相互垂直偏振分量的线偏振或圆偏正光。
本实施例中，在所述入射光系统200发射出初始入射光201之后，通过所述第一分光单元300，将所述初始入射光201转向为垂直入射所述待测晶圆101表面的入射光301。所述入射光201经所述待测晶圆101反射后，形成反射光302，并向所述第一分光单元300反射。接着，所述第一分光单元300接收并通过所述反射光302。
需要说明的是，由于入射光301垂直入射待测晶圆101表面，因此，入射光301和反射光302在传播方向相反的基础上，实际与垂直于待测晶圆101表面的法线之间3线合一。图1中为了便于说明和理解入射光301以及反射光302的传播方向，示意性的采用平行带箭头的线段分别表示入射光301和反射光302。
在本实施例中，所述第一分光单元300包括分光棱镜。
接着，通过所述偏振分光单元400，将通过所述第一分光单元300的反射光302偏振并分光为第一待测光401和第二待测光402，且所述第一待测光401的偏振方向和所述第二待测光402的偏振方向不同。从而，通过所述偏振分光单元400，能够对反射光302在分光的同时进行偏振控制，以形成2路不通的偏振光，用于同时分别检测至少2种不同的、需要特定偏振方向才能够被检测出的缺陷。
具体而言，请继续参考图1，在本实施例中，所述偏振分光单元400用于将所述反射光302偏振分光为第一待测光401和第二待测光402，所述第一待测光401的偏振方向与所述待测晶圆101表面平行，所述第二待测光402的偏振方向与所述待测晶圆101表面平行，且所述第一待测光401的偏振方向与所述第二待测光402的偏振方向之间互相垂直。
具体的，在本实施例中，在平行于待测晶圆101表面的平面上，所述第一待测光401为水平偏振的光学信号(如图1所示的方向H)， 所述第二待测光402为垂直偏振的光学信号(如图1所示的方向V)。
在其他实施例中，所述第一待测光也可以是垂直偏振的光学信号，且所述第二待测光是水平偏振的光学信号。
不仅如此，通过所述偏振分光单元400的偏振分光，所述第一待测光401和第二待测光402的传播方向也不同。
在本实施例中，所述偏振分光单元400包括偏振分光棱镜。
接着，通过所述第一检测单元510，根据所述第一待测光401获取第一待测光检测信息，通过所述第二检测单元520，根据所述第二待测光402获取第二待测光检测信息。
在本实施例中，所述第一检测单元510包括第一成像传感器(未图示)。
所述第二检测单元520包括第二成像传感器(未图示)。
需要说明的是，由于在线性光学的领域中，入射光与反射光中的相互垂直偏振的光学信号的信号强度，远低于入射光与反射光中的相互平行偏振的光学信号的信号强度，因此，本实施例中通过对反射光302进行偏振分离以检测缺陷的方式的效果，能够等价于上述另一个实施例的明场检测装置中，通过对入射光进行偏振分离以检测缺陷的方式的效果。
具体的，请结合参考图4至图7，其中，图4是一种类型的SEM缺陷的图像，图5是图4中的缺陷的光学信号检测结果比较示意图，图6是另一种类型的SEM缺陷的图像，图7是图6中的缺陷的光学信号检测结果比较示意图。
针对图4的区域A中的缺陷111，分别采用入射光是水平偏振且不对反射光进行偏振控制的光学信号H in/N out(上述另一个实施例的明场检测装置采用的检测方法中的待测光学信号)、反射光是水平偏振且不对入射光进行偏振控制的光学信号N in/H out(本实施例中的第 一待测光401)、入射光是垂直偏振且不对反射光进行偏振控制的光学信号V in/N out(上述另一个实施例的明场检测装置采用的检测方法中的待测光学信号)、反射光是垂直偏振且不对入射光进行偏振控制的光学信号N in/V out(本实施例中的第二待测光402)、入射光是水平偏振且反射光是垂直偏振的光学信号H in/V out(所述相互平行偏振的光学信号中的一种)、以及入射光是垂直偏振且反射光是水平偏振的光学信号V in/H out(所述相互平行偏振的光学信号中的另一种)，进行了缺陷检测。
如图5中所示，采用光学信号H in/N out和光学信号N in/H out的检测结果的信噪比以及信号强度较高，并且，采用光学信号H in/N out和光学信号N in/H out的检测结果接近，均能够较为明确的反应出缺陷111。相比于采用光学信号H in/N out和光学信号N in/H out，采用光学信号V in/N out和光学信号N in/V out的检测结果接近，但信噪比以及信号强度较低，不能明确的反应出缺陷111，即，不适于检测图4中的缺陷类型。而采用光学信号H in/V out和光学信号V in/H out的检测结果中的信噪比以及信号强度均非常低，完全无法反应出缺陷111。
同样的，针对图6的区域B中的缺陷112，也分别采用光学信号H in/N out、光学信号N in/H out、光学信号V in/N out、光学信号N in/V out、光学信号H in/V out、以及光学信号V in/H out，进行了缺陷检测。
如图7中所示，采用光学信号V in/N out和光学信号N in/V out的检测结果的信噪比以及信号强度较高，并且，采用光学信号V in/N out和光学信号N in/V out的检测结果接近，均能够较为明确的反应出缺陷112。相比于采用光学信号V in/N out和光学信号N in/V out，采用光学信号H in/N out和光学信号N in/H out的检测结果接近，但信噪比以及信号强度较低，不能明确的反应出缺陷112，即，不适于检测图5中的缺陷类型。而采用光学信号H in/V out和光学信号V in/H out的检测结果中的信噪比以及信号强度同样均非常低，完全无法反应出缺陷112。
由此可知，本实施例中的半导体检测装置的缺陷检测的灵敏度， 能够等价于上述另一个实施例的明场检测装置的缺陷检测的灵敏度。
请继续参考图1和图3，所述半导体检测装置还包括：控制系统600，用于根据所述第一待测光检测信息获取第一缺陷图像，并根据所述第一缺陷图像获取第一缺陷信息，还用于根据所述第二待测光检测信息获取第二缺陷图像，并根据所述第二缺陷图像获取第二缺陷信息。
具体的，本实施例中，所述控制系统600包括图像运算单元610，用于根据所述第一待测光检测信息获取第一缺陷图像，并用于根据所述第二待测光检测信息获取第二缺陷图像。从而，将检测到的待测晶圆101的缺陷形成可视化的图像。
本实施例中，所述控制系统600还包括缺陷判断单元620：用于根据所述第一缺陷图像获取第一缺陷信息，并用于根据所述第二缺陷图像获取第二缺陷信息。从而，获取到所检测到的缺陷的类型、及反应缺陷的具体数据。
在本实施例中，所述半导体检测装置还包括：聚焦单元700(如图1所示)，用于将入射光301聚焦于所述待测晶圆101表面或待测晶圆101内。
所述聚焦单元700包括聚焦透镜等。
在另一实施例中，半导体检测装置通过对第一待测光滤光、对第二待测光滤光，以替代对入射光进行滤光。
具体的，在另一实施例中，如图8所示，半导体检测装置包括入射光系统230，所述入射光系统230包括：光源(未图示)，用于发射初始入射光211，所述初始入射光211中包括2个以上在不同的预设波长范围内的光学信号。在发射初始入射光211之后，通过第一分光单元300，将所述初始入射光211转向为垂直入射所述待测晶圆101表面的入射光311，所述入射光311经过待测晶圆101的反射形成反射光312。接着，所述第一分光单元300接收并通过所述反射光312。
请继续参考图8，同样的，通过所述偏振分光单元400，将通过所述第一分光单元300的反射光312偏振并分光为第一待测光411和第二待测光412。本实施例中的第一待测光411和图1至图3所示实施例中的第一待测光401的区别在于，由于本实施例中的半导体检测装置未对入射光211滤光，因此，第一待测光411中包含了波长在至少2个以上不同的预设波长范围内的光学信号。同样的，本实施例中的第二待测光412和图1至图3所示实施例中的第二待测光402的区别在于，第二待测光412中包含了波长在至少2个以上不同的预设波长范围内的光学信号。
请继续参考图8，所述半导体检测装置还包括：第一滤光器410，用于对所述第一待测光411滤光，使所述第一待测光411中波长在第一预设波长范围内的光学信号通过所述第一滤光器，并将滤光后的第一待测光413传输至所述第一检测单元510；第二滤光器420，用于对所述第二待测光412滤光，使所述第二待测光412中波长在第二预设波长范围内的光学信号通过所述第二滤光器420，并将滤光后的第二待测光414传输至所述第二检测单元520。
由于所述半导体检测装置还包括用于对第一待测光411滤光的第一滤光器410、以及对第二待测光412滤光的第二滤光器420，因此，至少2种同时需要特殊波长和特定偏振方向的光学信号才能被检测出的缺陷，也能够被所述半导体检测装置检测到。从而，所述半导体检测装置在提高了缺陷检测的效率的同时，还提高了灵敏度。
在其他实施例中，半导体检测装置可以包括第一滤光器或者第二滤光器，以使2个检测通道中的1个检测通道，能够检测同时需要特殊波长和特定偏振方向的光学信号才能被检测出的缺陷，从而，使得半导体检测装置能够更好地平衡缺陷检测效率和制造成本。
在本实施例中，所述承载装置100包括：承载盘(未图示)，用于承载待测晶圆101；设置于所述承载盘的固定装置(未图示)，用于将待测晶圆101固定于所述承载盘。具体的，所述固定装置为真空 吸盘或固定于承载盘边缘的卡扣。
相应的，本发明一实施例还提供一种采用上述半导体检测装置的检测方法，请参考图9，包括：
步骤S1，提供待测晶圆；
步骤S2，发射初始入射光；
步骤S3，将所述初始入射光转向为垂直入射所述待测晶圆表面的入射光，且所述入射光经所述待测晶圆的反射形成反射光；
步骤S4，将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光的偏振方向和所述第二待测光的偏振方向不同；
步骤S5，根据所述第一待测光获取第一待测光检测信息；
步骤S6，根据所述第二待测光获取第二待测光检测信息。
以下将结合附图进行详细说明。
请结合参考图1和图2，提供待测晶圆101；接着，发射初始入射光201。
在本实施例中，形成所述初始入射光201的方法包括：发射第一入射光202；对所述第一入射光202滤光，以通过所述第一入射光202中波长在所述第三预设波长范围内的光学信号，形成所述初始入射光201。
在本实施例中，光源210所发射出的第一入射光202为非偏振光、或是同时具有两种相互垂直偏振分量的线偏振或圆偏正光。
在另一实施例中，请参考图8，发射初始入射光211，所述初始入射光211中包括2个以上在不同的预设波长范围内的光学信号。
接着，请继续参考图1，将所述初始入射光201转向为垂直入射所述待测晶圆101表面的入射光301，且所述入射光301经所述待测晶圆101的反射形成反射光302。
在本实施例中，所述检测方法还包括：将所述入射光301聚焦于所述待测晶圆101表面或待测晶圆101内。
在另一实施例中，请结合参考图8，将所述初始入射光211转向为垂直入射所述待测晶圆101表面的入射光311，且所述入射光311经所述待测晶圆101的反射形成反射光312。
请继续参考图1，将所述反射光302偏振分光为第一待测光401和第二待测光402，且所述第一待测光401的偏振方向和所述第二待测光402的偏振方向不同。
具体而言，在本实施例中，所述第一待测光401的偏振方向与所述待测晶圆101表面平行，所述第二待测光402的偏振方向与所述待测晶圆101表面平行，且所述第一待测光401的偏振方向与所述第二待测光402的偏振方向之间互相垂直。
具体的，在本实施例中，在平行于待测晶圆101表面的平面上，所述第一待测光401为水平偏振的光学信号(如图1所示的方向H)，所述第二待测光402为垂直偏振的光学信号(如图1所示的方向V)。
在其他实施例中，所述第一待测光也可以是垂直偏振的光学信号，且所述第二待测光是水平偏振的光学信号。
不仅如此，所述第一待测光401和第二待测光402的传播方向也不同。
请继续参考图1，根据所述第一待测光401获取第一待测光检测信息，根据所述第二待测光402获取第二待测光检测信息。
在本实施例中，所述检测方法还包括：根据所述第一待测光检测信息获取第一缺陷图像；根据所述第一缺陷图像获取第一缺陷信息。
在本实施例中，所述检测方法还包括：根据所述第二待测光检测信息获取第二缺陷图像；根据所述第二缺陷图像获取第二缺陷信息。
在另一实施例中，请继续参考图8，将所述反射光312偏振分光 为第一待测光411和第二待测光412。所述第一待测光411和第一待测光401(如图1中所示)的偏振方向以及传播方向相同，所述第二待测光412和第二待测光402(如图1中所示)的偏振方向以及传播方向相同，在此不再赘述。接着，所述检测方法还包括：对所述第一待测光411滤光，以通过所述第一待测光411中波长在第一预设波长范围内的光学信号；对所述第二待测光412滤光，以通过所述第二待测光412中波长在第二预设波长范围内的光学信号；根据滤光后的第一待测光413获取第一待测光检测信息，根据滤光后的第二待测光414获取第二待测光检测信息；根据所述第一待测光检测信息获取第一缺陷图像；根据所述第一缺陷图像获取第一缺陷信息；根据所述第二待测光检测信息获取第二缺陷图像；根据所述第二缺陷图像获取第二缺陷信息。
在另一实施例中，具体的，所述第一预设波长范围和所述第二预设波长范围不同。
在其他实施例中，所述检测方法包括：对第一待测光411滤光，以通过所述第一待测光411中波长在第一预设波长范围内的光学信号。或者对所述第二待测光412滤光，以通过所述第二待测光412中波长在第二预设波长范围内的光学信号。
虽然本发明披露如上，但本发明并非限定于此。任何本领域技术人员，在不脱离本发明的精神和范围内，均可作各种更动与修改，因此本发明的保护范围应当以权利要求所限定的范围为准。

Claims (20)

  1. 一种半导体检测装置，其特征在于，包括：
    承载装置，用于承载待测晶圆；
    入射光系统，用于发射初始入射光；
    第一分光单元，用于将所述初始入射光转向为垂直入射所述待测晶圆表面的入射光，并用于通过由所述入射光经所述待测晶圆反射而成的反射光；
    偏振分光单元，用于将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光的偏振方向和所述第二待测光的偏振方向不同；
    第一检测单元，用于根据所述第一待测光获取第一待测光检测信息；
    第二检测单元，用于根据所述第二待测光获取第二待测光检测信息。
  2. 如权利要求1所述的半导体检测装置，其特征在于，所述偏振分光单元用于将所述反射光偏振分光为第一待测光和第二待测光，所述第一待测光的偏振方向与所述待测晶圆表面平行，所述第二待测光的偏振方向与所述待测晶圆表面平行，且所述第一待测光的偏振方向与所述第二待测光的偏振方向之间互相垂直。
  3. 如权利要求1所述的半导体检测装置，其特征在于，所述偏振分光单元用于将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光和第二待测光的传播方向也不同。
  4. 如权利要求1所述的半导体检测装置，其特征在于，所述第一分光单元包括分光棱镜。
  5. 如权利要求1所述的半导体检测装置，其特征在于，所述偏振分 光单元包括偏振分光棱镜。
  6. 如权利要求1所述的半导体检测装置，其特征在于，还包括：第一滤光器，用于对所述第一待测光滤光，使所述第一待测光中波长在第一预设波长范围内的光学信号通过所述第一滤光器，并将滤光后的第一待测光传输至所述第一检测单元。
  7. 如权利要求6所述的半导体检测装置，其特征在于，还包括：第二滤光器，用于对所述第二待测光滤光，使所述第二待测光中波长在第二预设波长范围内的光学信号通过所述第二滤光器，并将滤光后的第二待测光传输至所述第二检测单元。
  8. 如权利要求7所述的半导体检测装置，其特征在于，所述第一预设波长范围和所述第二预设波长范围不同。
  9. 如权利要求1所述的半导体检测装置，其特征在于，所述第一检测单元包括第一成像传感器，所述第二检测单元包括第二成像传感器。
  10. 如权利要求1或9所述的半导体检测装置，其特征在于，还包括：控制系统，用于根据所述第一待测光检测信息获取第一缺陷图像，并根据所述第一缺陷图像获取第一缺陷信息，还用于根据所述第二待测光检测信息获取第二缺陷图像，并根据所述第二缺陷图像获取第二缺陷信息。
  11. 如权利要求1所述的半导体检测装置，其特征在于，所述入射光系统包括：光源，用于发射第一入射光；滤光单元，用于对所述第一入射光滤光，使所述第一入射光中波长在第三预设波长范围内的光学信号通过所述滤光单元，形成所述初始入射光。
  12. 如权利要求1所述的半导体检测装置，其特征在于，还包括：聚焦单元，用于将入射光聚焦于所述待测晶圆表面或待测晶圆内。
  13. 一种采用如权利要求1至12中任一项所述半导体检测装置进行的检测方法，其特征在于，包括：
    提供待测晶圆；
    发射初始入射光；
    将所述初始入射光转向为垂直入射所述待测晶圆表面的入射光，且所述入射光经所述待测晶圆的反射形成反射光；
    将所述反射光偏振分光为第一待测光和第二待测光，且所述第一待测光的偏振方向和所述第二待测光的偏振方向不同；
    根据所述第一待测光获取第一待测光检测信息；
    根据所述第二待测光获取第二待测光检测信息。
  14. 如权利要求13所述的检测方法，其特征在于，所述第一待测光的偏振方向与所述待测晶圆表面平行，所述第二待测光的偏振方向与所述待测晶圆表面平行，且所述第一待测光的偏振方向与所述第二待测光的偏振方向之间互相垂直。
  15. 如权利要求13所述的检测方法，其特征在于，所述第一待测光和第二待测光的传播方向不同。
  16. 如权利要求13所述的检测方法，其特征在于，还包括：根据所述第一待测光获取第一待测光检测信息前，对所述第一待测光滤光，以通过所述第一待测光中波长在第一预设波长范围内的光学信号。
  17. 如权利要求16所述的检测方法，其特征在于，还包括：根据所述第二待测光获取第二待测光检测信息前，对所述第二待测光滤光，以通过所述第二待测光中波长在第二预设波长范围内的光学信号。
  18. 如权利要求17所述的检测方法，其特征在于，所述第一预设波长范围和所述第二预设波长范围不同。
  19. 如权利要求13或18所述的检测方法，其特征在于，还包括：根 据所述第一待测光检测信息获取第一缺陷图像；根据所述第一缺陷图像获取第一缺陷信息；根据所述第二待测光检测信息获取第二缺陷图像；所述第二缺陷图像获取第二缺陷信息。
  20. 如权利要求13所述的检测方法，其特征在于，形成所述初始入射光的方法包括：发射第一入射光；对所述第一入射光滤光，以通过所述第一入射光中波长在第三预设波长范围内的光学信号，形成所述初始入射光。
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CN112986191A (zh) * 2021-02-23 2021-06-18 紫创(南京)科技有限公司 半导体检测装置及检测方法
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