WO2022121572A1 - Magnetic tunnel junction stack structure, memory, and neural network computing device - Google Patents

Magnetic tunnel junction stack structure, memory, and neural network computing device Download PDF

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WO2022121572A1
WO2022121572A1 PCT/CN2021/128688 CN2021128688W WO2022121572A1 WO 2022121572 A1 WO2022121572 A1 WO 2022121572A1 CN 2021128688 W CN2021128688 W CN 2021128688W WO 2022121572 A1 WO2022121572 A1 WO 2022121572A1
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layer
free layer
magnetization
tunnel junction
spin
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French (fr)
Chinese (zh)
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李州
孟皓
迟克群
石以诺
张文彪
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浙江驰拓科技有限公司
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Definitions

  • the invention relates to the technical field of computer storage, in particular to a magnetic tunnel junction stack structure, a memory, a neural network computing device, and a spin oscillator.
  • a magnetic tunnel junction includes a free layer, a barrier layer, and a reference layer.
  • the magnetization direction of the reference layer is fixed, and the magnetization direction of the free layer is variable.
  • the magnetic tunnel junction is in a low resistance state; when the free layer and the reference layer are antiparallel, the magnetic tunnel junction is in a high resistance state.
  • the change of the magnetization direction of the free layer is generally realized by the spin-orbit moment providing layer.
  • the spin-orbit moment providing layer is generally made of heavy metal (HM). The magnetic moment of the layer is flipped.
  • the inventor found that there are at least the following technical problems in the prior art: the magnetic memory based on the current spin-orbit moment generally requires an external magnetic field, and the turnover efficiency is low, and the magnetization of the free layer of the magnetic tunnel junction is only Two states, the application is relatively single.
  • the magnetic tunnel junction stack structure, memory, neural network computing device, and spin oscillator provided by the present invention the magnetization modes of the first free layer and the second free layer are set to different magnetization modes, and the combination of the two can be used. Adapt to a variety of applications.
  • the present invention provides a magnetic tunnel junction stack structure, comprising: a spin-orbit moment providing layer, a first free layer, a coupling layer, a second free layer, a potential barrier layer and a reference layer that are sequentially stacked from bottom to top ;in,
  • One of the first free layer and the second free layer is in-plane magnetization, and the other is perpendicular magnetization;
  • the magnetization of the reference layer is the same as the magnetization of the second free layer.
  • the coupling layer includes:
  • the second covering area covers the area on the upper surface of the spin-orbit moment providing layer except the covering area of the first free layer.
  • the spin Hall angle of the coupling layer is opposite to the spin Hall angle of the self-selected orbital moment providing layer.
  • the material of one of the coupling layer and the spin-orbit moment providing layer includes one or more of Pt, Pd, Ir or Au, and the material of the other includes Ta, W or Mo. one or more.
  • the material of the first free layer, the second free layer and the reference layer includes one or more of Co, Fe, Ni, B, Pd or Pt; the material of the barrier layer includes MgO, One or more of MgAl 2 O 4 or Al 2 O 3 .
  • the present invention provides a memory, comprising:
  • the saturation magnetization and the saturation magnetization of the second free layer satisfy the following relationship:
  • a current source is electrically connected to the spin-orbit moment providing layer, the current source is used to provide various write currents, and the direction of the current is in-plane and perpendicular to the magnetization direction of the first free layer.
  • the present invention also provides a multi-resistance memory, comprising:
  • a current source is electrically connected to the spin-orbit torque providing layer, and the current source is used to provide various write currents.
  • the first free layer is in a perpendicular magnetization manner
  • the second free layer and the reference layer are in an in-plane magnetization manner.
  • the present invention also provides a neural network computing device, comprising:
  • a current source is electrically connected to the spin-orbit torque providing layer, and the current source is used to provide various write currents.
  • the present invention also provides a spin oscillator, comprising:
  • a current source electrically connected to the spin-orbit torque providing layer, the current source for supplying a current to the spin-orbit torque providing layer, the current being greater than three times the flipping current of the first free layer.
  • the magnetic tunnel junction stack structure provided by the present invention has two free layers, and the first free layer and the second free layer can have magnetization components in both in-plane and vertical directions through the coupling of the first free layer and the second free layer. , each free layer has magnetization components in two directions, and the magnetization components of the two free layers are flipped by different current-driven forms.
  • the structure can not only realize efficient flipping without external magnetic field, but also realize multiple states, thereby enabling the magnetic tunnel junction to have wider applications.
  • FIG. 1 is a schematic structural diagram of a magnetic tunnel junction stack structure according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of two kinds of magnetic moment changes of the magnetic tunnel junction stack structure according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a magnetic moment oscillation variation of a magnetic tunnel junction stack structure according to an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of a magnetic tunnel junction stack structure according to another embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a magnetic tunnel junction stack structure according to another embodiment of the present invention.
  • FIG. 6 is a schematic diagram of various magnetic moment changes of the magnetic tunnel junction stack structure according to another embodiment of the present invention.
  • FIG. 7 is a schematic diagram of various resistance changes of the magnetic tunnel junction stack structure according to another embodiment of the present invention.
  • An embodiment of the present invention provides a magnetic tunnel junction stack structure, as shown in FIG. 1 , including: a spin-orbit moment providing layer 100 , a first free layer 200 , a coupling layer 300 , and a second free layer that are sequentially stacked from bottom to top 400, the barrier layer 500 and the reference layer 600; wherein, one of the first free layer 200 and the second free layer 400 is in-plane magnetization, and the other is perpendicular magnetization; The magnetization manner is the same as that of the second free layer 400 . Wherein, in this embodiment, the magnetization direction of the reference layer 600 is fixed, and the magnetization directions of the first free layer 200 and the second free layer 400 are variable.
  • the reference layer 600 and the second free layer 400 are both perpendicularly magnetized or both are in-plane magnetization, and the magnetization directions of the first free layer 200 and the second free layer 400 are different. If the second free layer 400 is in-plane magnetization, the first free layer 200 is perpendicularly magnetized; if the second free layer 400 is perpendicularly magnetized, the first free layer 200 is in-plane magnetization.
  • the spin-orbit moment providing layer 100 supplies current to pass through, and the in-plane magnetization direction of the first free layer 200 or the second free layer 400 is perpendicular to the current direction.
  • the magnetic moment of the first free layer 200 is deflected, and the magnetic moment of the second free layer 400 is deflected by the coupling effect.
  • the first free layer 200 and the second free layer 400 can be flipped simultaneously or multi-resistance state storage can be realized.
  • the materials of the first free layer 200 , the second free layer 400 and the reference layer 600 include one or more of Co, Fe, Ni, B, Pd or Pt.
  • the material of the barrier layer 500 includes one or more of MgO, MgAl 2 O 4 , and Al 2 O 3 .
  • the material of one of the coupling layer 300 and the spin-orbit moment providing layer 100 includes one or more of Pt, Pd, Ir or Au, and the material of the other includes Ta One or more of , W or Mo.
  • Pt, Pd, Ir and Au are materials with positive spin Hall angles
  • Ta, W and Mo are materials with negative spin Hall angles.
  • the magnetic tunnel junction stack structure provided by the embodiment of the present invention has two free layers, and the first free layer and the second free layer can have magnetization components in both in-plane and vertical directions through the cooperation of the magnetization mode through the coupling action. , that is, each free layer has magnetization components in two directions, and the magnetization components of the two free layers are flipped through different current-driven forms, and can have multiple states, thereby enabling the magnetic tunnel junction to have a wider range of applications. .
  • the structure can not only realize efficient flipping without external magnetic field, but also realize multiple states, thereby enabling the magnetic tunnel junction to have wider applications.
  • the memory cells of the magnetic tunnel junction stack structure are plated on the substrate by using traditional molecular beam epitaxy, atomic layer deposition or magnetron sputtering, etc., and then perform photolithography, etching, etc.
  • the shape of the magnetic tunnel junction is ellipse, diamond, rectangle or polygon.
  • the antiferromagnetic coupling effect can be achieved by adjusting the thickness of the coupling layer 300 .
  • the coupling layer 300 includes:
  • the second coverage area covers the upper surface of the spin-orbit moment providing layer 100 except for the coverage area of the first free layer 200 .
  • the coupling layer 300 covers the first free layer 200 and the spin-orbit moment providing layer 100, which is beneficial to improve the turnover efficiency of the first free layer 200, and the antiferromagnetic coupling effect of the coupling layer 300 is preferentially used, and the spin Hall itself is preferably used. Effects stack up.
  • the spin Hall angle of the coupling layer 300 is opposite to the spin Hall angle of the self-selected orbital moment providing layer.
  • the coupling layer 300 and the spin-orbit moment providing layer 100 jointly promote the magnetic moment inversion of the first free layer 200 , which is equivalent to increasing the spin Hall angle and improving the inversion efficiency.
  • An embodiment of the present invention further provides a memory, including: any one of the above-mentioned magnetic tunnel junction stack structures; wherein, the first free layer is in an in-plane magnetization manner, the second free layer and the reference layer is a perpendicular magnetization method; the saturation magnetization of the first free layer and the saturation magnetization of the second free layer satisfy the following relationship:
  • a current source is electrically connected to the spin-orbit moment providing layer, the current source is used to provide various write currents, and the direction of the current is in-plane and perpendicular to the magnetization direction of the first free layer.
  • the memory provided in this embodiment does not require an external magnetic field, the current drives the magnetic moment of the first free layer 200 to flip, and drives the second free layer 400 to flip through the coupling action, so that two resistance states, high and low, can be realized.
  • FIG. 2 shows the changes of the magnetic moments of the first free layer 200 and the second free layer 400 which are simulated and displayed according to the present embodiment.
  • the free relaxation states of the first free layer 200 and the second free layer 400 in no current state are initial states.
  • the in-plane magnetization component when the current drives the in-plane magnetization component of the first free layer 200 from positive to negative, due to the antiferromagnetic effect, the in-plane magnetization component of the second free layer 400 changes from negative to positive.
  • the in-plane antiferromagnetic effect is established regardless of the saturation magnetization of the first free layer 200 and the saturation magnetization of the second free layer 400 .
  • the perpendicular magnetization component the larger the saturation magnetization of the first free layer 200 is, the less the antiferromagnetic effect has on it, that is, the smaller the perpendicular magnetization component of the first free layer 200, the smaller the During the inversion process, the precession starts from the initial state.
  • the antiferromagnetic effect has a certain probability that the perpendicular magnetization component of the second free layer 400 changes from positive to negative to achieve flipping.
  • FIG. 2 the magnetic moments of the first free layer 200 and the second free layer 400 both have positive and negative values, and the change in the resistance of the magnetic tunnel junction is mainly caused by the magnetic layer (the second one) directly connected to the barrier layer 500 .
  • the included angle between the magnetization direction of the free layer 400) and the magnetization direction of the reference layer 600 is determined. Therefore, the resistance of the magnetic tunnel junction corresponds to two resistance states.
  • the saturation magnetization of the first free layer 200 and the saturation magnetization of the second free layer 400 satisfy the following relationship:
  • the influence of the antiferromagnetic effect on the first free layer 200 is obvious.
  • the perpendicular magnetization component of the first free layer 200 larger the first free layer 200 starts to precess from the initial state during the flipping process, and the maximum precession angle is smaller than the angle between the initial direction of the magnetic moment and the film interface, that is, the first A free layer 200 cannot reverse the perpendicular magnetization direction, and thus cannot make the perpendicular magnetization component of the second free layer 400 reverse through coupling.
  • An embodiment of the present invention also provides a multi-resistance memory, including:
  • a current source is electrically connected to the spin-orbit moment providing layer, and the current source is used to provide various write currents; the memory exhibits various resistance states, enabling multi-resistance state storage, thereby improving storage density .
  • the magnetic tunnel junction stack structure provided by the embodiment of the present invention has two free layers, and the first free layer and the second free layer can have magnetization components in both in-plane and vertical directions through the cooperation of the magnetization mode through the coupling action. , that is, each free layer has magnetization components in two directions, and the magnetization components of the two free layers are flipped through different current-driven forms, and can have multiple states, thereby enabling the magnetic tunnel junction to have a wider range of applications. .
  • the structure can not only realize efficient flipping without external magnetic field, but also realize multiple states, thereby enabling the magnetic tunnel junction to have wider applications.
  • the first free layer is in a perpendicular magnetization manner
  • the second free layer and the reference layer are in an in-plane magnetization manner.
  • FIG. 6 shows the changes of the magnetic moments of the first free layer 200 and the second free layer 400 which are simulated and displayed according to the present embodiment. The principle is similar, for the perpendicular magnetization components of the first free layer 200 and the second free layer 400, due to the perpendicular magnetization of the first free layer 200, the perpendicular magnetization component of the first free layer 200 is very large. The angles are smaller than the angle between the initial direction of the magnetic moment and the film interface.
  • the perpendicular magnetization component of the first free layer 200 is not reversed, and the perpendicular magnetization component of the second free layer 400 cannot be reversed through coupling.
  • the in-plane magnetization components of the first free layer 200 and the second free layer 400 the in-plane magnetization components of the first free layer 200 can be reversed, and at the same time, based on the antiferromagnetic coupling effect of the coupling layer, the second free layer can also be driven.
  • the in-plane magnetization component of layer 400 flips.
  • the magnetic moment of the first free layer 200 basically does not change, and the magnitude of the current will cause the deflection angle of the second free layer 400 to be different, so that the magnetic anisotropy, the spin-orbit moment and the coupling effect are balanced.
  • the reference layer 600 is magnetized in-plane and the magnetization direction is fixed.
  • the resistance of the magnetic tunnel junction is mainly determined by the angle between the magnetization direction of the second free layer 400 and the magnetization direction of the reference layer 600 .
  • the in-plane magnetization components of the magnetic moments of the second free layer 400 are different.
  • FIG. 7 a schematic diagram of the resistance change of the magnetic tunnel junction, under different write currents, the magnetic tunnel junction will have different resistance values, thereby having a multi-resistance storage mode.
  • Embodiments of the present invention also provide a neural network computing device, comprising:
  • a current source is electrically connected to the spin-orbit torque providing layer, and the current source is used to provide various write currents.
  • each storage unit of each magnetic tunnel junction stack structure has a plurality of resistance states
  • the resistance states can be corresponding to the weight values. Convert the weight value to binary for storage, and one storage unit can complete the storage of a weight. When using the weight, reading a storage unit can get the weight, eliminating the binary conversion process, thereby improving the neural network. Computational efficiency.
  • the magnetic tunnel junction can exhibit multiple resistance states through multiple directions of the magnetic moments of the first free layer 200 or the second free layer 400 , so that the storage of multiple storage states can be realized.
  • An embodiment of the present invention also provides a spin oscillator, including:
  • FIG. 3 which is simulated according to this embodiment, when a sufficiently large current is continuously applied (for example, when the magnetization reversal current is more than three times the current), the magnetic properties of the first free layer 200 and the second free layer 400 As can be seen from the figure, the magnetic moments of the first free layer 200 and the second free layer 400 both produce oscillation phenomenon, wherein the magnetic moment of the second free layer 400 has a large oscillation amplitude and a strong signal, and is easier to be received. Therefore, this structure can be applied to microwave oscillators.

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Abstract

The present invention provides a magnetic tunnel junction stack structure, comprising: a spin-orbit torque providing layer, a first free layer, a coupling layer, a second free layer, a barrier layer, and a reference layer which are sequentially stacked from bottom to top. One of the first free layer and the second free layer is in an in-plane magnetization mode, and the other is in a vertical magnetization mode. The magnetization mode of the reference layer is the same as that of the second free layer. The magnetization modes of the first free layer and the second free layer are configured to be different magnetization modes, and by means of the combination of the two, the present invention can adapt to various applications.

Description

磁隧道结叠层结构、存储器及神经网络计算装置Magnetic tunnel junction stack structure, memory and neural network computing device 技术领域technical field
本发明涉及计算机存储技术领域，尤其涉及一种磁隧道结叠层结构、存储器、神经网络计算装置、自旋振荡器。The invention relates to the technical field of computer storage, in particular to a magnetic tunnel junction stack structure, a memory, a neural network computing device, and a spin oscillator.
背景技术Background technique
磁性隧道结(MTJ)包括自由层、势垒层、参考层。一般用于非易失性存储器件中，参考层磁化方向固定，自由层磁化方向可变。当自由层和参考层平行，磁性隧道结为低阻态；当自由层和参考层反平行，磁性隧道结为高阻态。自由层磁化方向的改变一般通过自旋轨道矩提供层来实现，自旋轨道矩提供层一般采用重金属(HM)，当电流流经重金属，通过外磁场的辅助或者设置磁性偏置层，实现自由层的磁矩翻转。A magnetic tunnel junction (MTJ) includes a free layer, a barrier layer, and a reference layer. Generally used in non-volatile memory devices, the magnetization direction of the reference layer is fixed, and the magnetization direction of the free layer is variable. When the free layer and the reference layer are parallel, the magnetic tunnel junction is in a low resistance state; when the free layer and the reference layer are antiparallel, the magnetic tunnel junction is in a high resistance state. The change of the magnetization direction of the free layer is generally realized by the spin-orbit moment providing layer. The spin-orbit moment providing layer is generally made of heavy metal (HM). The magnetic moment of the layer is flipped.
在实现本发明的过程中，发明人发现现有技术中至少存在如下技术问题：目前基于自旋轨道矩的磁存储器，一般需要外加磁场，且翻转效率偏低，磁性隧道结的自由层磁化只有两种状态，应用较为单一。In the process of realizing the present invention, the inventor found that there are at least the following technical problems in the prior art: the magnetic memory based on the current spin-orbit moment generally requires an external magnetic field, and the turnover efficiency is low, and the magnetization of the free layer of the magnetic tunnel junction is only Two states, the application is relatively single.
发明内容SUMMARY OF THE INVENTION
本发明提供的磁隧道结叠层结构、存储器、神经网络计算装置、自旋振荡器；将第一自由层和第二自由层的磁化方式设置为不同的磁化方式，利用两者的组合，能够适应多种应用。The magnetic tunnel junction stack structure, memory, neural network computing device, and spin oscillator provided by the present invention; the magnetization modes of the first free layer and the second free layer are set to different magnetization modes, and the combination of the two can be used. Adapt to a variety of applications.
第一方面，本发明提供一种磁隧道结叠层结构，包括：由下向上依次层叠的自旋轨道矩提供层、第一自由层、耦合层、第二自由层、势垒层和参考层；其中，In a first aspect, the present invention provides a magnetic tunnel junction stack structure, comprising: a spin-orbit moment providing layer, a first free layer, a coupling layer, a second free layer, a potential barrier layer and a reference layer that are sequentially stacked from bottom to top ;in,
所述第一自由层和所述第二自由层的其中一个为面内磁化方式，另一个为 垂直磁化方式；One of the first free layer and the second free layer is in-plane magnetization, and the other is perpendicular magnetization;
所述参考层的磁化方式与第二自由层的磁化方式相同。The magnetization of the reference layer is the same as the magnetization of the second free layer.
可选地，所述耦合层包括：Optionally, the coupling layer includes:
第一覆盖区域，覆盖在第一自由层的上表面；a first covering area, covering the upper surface of the first free layer;
第二覆盖区域，覆盖在所述自旋轨道矩提供层上表面除所述第一自由层覆盖区域之外的区域。The second covering area covers the area on the upper surface of the spin-orbit moment providing layer except the covering area of the first free layer.
可选地，所述耦合层的自旋霍尔角与所述自选轨道矩提供层的自旋霍尔角的方向相反。Optionally, the spin Hall angle of the coupling layer is opposite to the spin Hall angle of the self-selected orbital moment providing layer.
可选地，所述耦合层和所述自旋轨道矩提供层的其中一个的材料包括Pt、Pd、Ir或Au中的一种或几种，另一个的材料包括Ta、W或Mo中的一种或几种。Optionally, the material of one of the coupling layer and the spin-orbit moment providing layer includes one or more of Pt, Pd, Ir or Au, and the material of the other includes Ta, W or Mo. one or more.
可选地，所述第一自由层、第二自由层和参考层的材料包括Co、Fe、Ni、B、Pd或Pt中的一种或几种；所述势垒层的材料包括MgO、MgAl 2O 4或Al 2O 3中的一种或几种。 Optionally, the material of the first free layer, the second free layer and the reference layer includes one or more of Co, Fe, Ni, B, Pd or Pt; the material of the barrier layer includes MgO, One or more of MgAl 2 O 4 or Al 2 O 3 .
第二方面，本发明提供一种存储器，包括：In a second aspect, the present invention provides a memory, comprising:
如上述的任意一种磁隧道结叠层结构；其中，所述第一自由层为面内磁化方式，所述第二自由层和所述参考层为垂直磁化方式；所述第一自由层的饱和磁化强度与所述第二自由层的饱和磁化强度满足如下关系：|Ms1-Ms2|/Ms2≥20％；其中，Ms1为第一自由层的饱和磁化强度，Ms2为第二自由层的饱和磁化强度；A magnetic tunnel junction stack structure as described above; wherein, the first free layer is in an in-plane magnetization manner, the second free layer and the reference layer are in a perpendicular magnetization manner; The saturation magnetization and the saturation magnetization of the second free layer satisfy the following relationship: |Ms1-Ms2|/Ms2≥20%; wherein, Ms1 is the saturation magnetization of the first free layer, and Ms2 is the saturation of the second free layer magnetization;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流，所述电流的方向在面内且与第一自由层磁化方向垂直。A current source is electrically connected to the spin-orbit moment providing layer, the current source is used to provide various write currents, and the direction of the current is in-plane and perpendicular to the magnetization direction of the first free layer.
第三方面，本发明还提供一种多阻态存储器，包括：In a third aspect, the present invention also provides a multi-resistance memory, comprising:
如上述的任意一种磁隧道结叠层结构；As any one of the above-mentioned magnetic tunnel junction stack structure;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流。A current source is electrically connected to the spin-orbit torque providing layer, and the current source is used to provide various write currents.
可选地，所述第一自由层为垂直磁化方式，所述第二自由层和所述参考层为面内磁化方式。Optionally, the first free layer is in a perpendicular magnetization manner, and the second free layer and the reference layer are in an in-plane magnetization manner.
第四方面，本发明还提供一种神经网络计算装置，包括In a fourth aspect, the present invention also provides a neural network computing device, comprising:
如上述的任意一种磁隧道结叠层结构；用于依据多种电流存储对应的权重值；Any one of the above-mentioned magnetic tunnel junction stack structures; used for storing corresponding weight values according to a variety of currents;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流。A current source is electrically connected to the spin-orbit torque providing layer, and the current source is used to provide various write currents.
第五方面，本发明还提供一种自旋振荡器，包括：In a fifth aspect, the present invention also provides a spin oscillator, comprising:
如上述的任意一种磁隧道结叠层结构；As any one of the above-mentioned magnetic tunnel junction stack structure;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于向所述自旋轨道矩提供层提供电流所述电流大于所述第一自由层的翻转电流的三倍。a current source electrically connected to the spin-orbit torque providing layer, the current source for supplying a current to the spin-orbit torque providing layer, the current being greater than three times the flipping current of the first free layer.
本发明提供的磁隧道结叠层结构具有两个自由层，并且，第一自由层和第二自由层通过耦合作用于磁化方式的配合，能够在面内和垂直方向上都具有磁化分量，即，每个自由层都具有两个方向的磁化分量，两个自由层的磁化分量通过不同的电流驱动形式进行翻转。该结构既可以实现无外磁场高效翻转，又可以实现多种状态，从而，能够使磁隧道结具有更广泛的应用。The magnetic tunnel junction stack structure provided by the present invention has two free layers, and the first free layer and the second free layer can have magnetization components in both in-plane and vertical directions through the coupling of the first free layer and the second free layer. , each free layer has magnetization components in two directions, and the magnetization components of the two free layers are flipped by different current-driven forms. The structure can not only realize efficient flipping without external magnetic field, but also realize multiple states, thereby enabling the magnetic tunnel junction to have wider applications.
附图说明Description of drawings
图1为本发明一实施例磁隧道结叠层结构的结构示意图；1 is a schematic structural diagram of a magnetic tunnel junction stack structure according to an embodiment of the present invention;
图2为本发明一实施例磁隧道结叠层结构的两种磁矩变化示意图；2 is a schematic diagram of two kinds of magnetic moment changes of the magnetic tunnel junction stack structure according to an embodiment of the present invention;
图3为本发明一实施例磁隧道结叠层结构的磁矩振荡变化示意图；FIG. 3 is a schematic diagram of a magnetic moment oscillation variation of a magnetic tunnel junction stack structure according to an embodiment of the present invention;
图4为本发明另一实施例磁隧道结叠层结构的结构示意图；4 is a schematic structural diagram of a magnetic tunnel junction stack structure according to another embodiment of the present invention;
图5为本发明另一实施例磁隧道结叠层结构的结构示意图；5 is a schematic structural diagram of a magnetic tunnel junction stack structure according to another embodiment of the present invention;
图6为本发明另一实施例磁隧道结叠层结构的多种磁矩变化示意图；6 is a schematic diagram of various magnetic moment changes of the magnetic tunnel junction stack structure according to another embodiment of the present invention;
图7为本发明另一实施例磁隧道结叠层结构的多种电阻变化示意图。FIG. 7 is a schematic diagram of various resistance changes of the magnetic tunnel junction stack structure according to another embodiment of the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
本发明实施例提供一种磁隧道结叠层结构，如图1所示，包括：由下向上依次层叠的自旋轨道矩提供层100、第一自由层200、耦合层300、第二自由层400、势垒层500和参考层600；其中，所述第一自由层200和所述第二自由层400的其中一个为面内磁化方式，另一个为垂直磁化方式；所述参考层600的磁化方式与第二自由层400的磁化方式相同。其中，在本实施例中，参考层600磁化方向固定，第一自由层200和第二自由层400的磁化方向可变。参考层600和第二自由层400同为垂直磁化或者同为面内磁化，第一自由层200和第二自由层400磁化方向不同。若第二自由层400为面内磁化，则第一自由层200为垂直磁化；若第二自由层400为垂直磁化，则第一自由层200为面内磁化。自旋轨道矩提供层100供电流通过，第一自由层200或第二自由层400面内磁化方向与电流方向垂直。当电流通过自旋轨道矩提供层100，引起第一自由层200的磁矩偏转，依靠耦合作用，带动第二自由层400磁矩偏转。在不同饱和磁化强度和不同电流条件下，可实现第一自由层200和第二自由层 400同时翻转或者实现多阻态存储。作为一种可选的实施方式，所述第一自由层200、第二自由层400和参考层600的材料包括Co、Fe、Ni、B、Pd或Pt中的一种或几种。作为一种可选的实施方式，所述势垒层500的材料包括MgO、MgAl 2O 4、Al 2O 3中的一种或几种。作为一种优选的实施方式，所述耦合层300和所述自旋轨道矩提供层100的其中一个的材料包括Pt、Pd、Ir或Au中的一种或几种，另一个的材料包括Ta、W或Mo中的一种或几种。上述的材料中，Pt、Pd、Ir和Au为自旋霍尔角为正值的材料，Ta、W和Mo为自旋霍尔角为负值的材料。 An embodiment of the present invention provides a magnetic tunnel junction stack structure, as shown in FIG. 1 , including: a spin-orbit moment providing layer 100 , a first free layer 200 , a coupling layer 300 , and a second free layer that are sequentially stacked from bottom to top 400, the barrier layer 500 and the reference layer 600; wherein, one of the first free layer 200 and the second free layer 400 is in-plane magnetization, and the other is perpendicular magnetization; The magnetization manner is the same as that of the second free layer 400 . Wherein, in this embodiment, the magnetization direction of the reference layer 600 is fixed, and the magnetization directions of the first free layer 200 and the second free layer 400 are variable. The reference layer 600 and the second free layer 400 are both perpendicularly magnetized or both are in-plane magnetization, and the magnetization directions of the first free layer 200 and the second free layer 400 are different. If the second free layer 400 is in-plane magnetization, the first free layer 200 is perpendicularly magnetized; if the second free layer 400 is perpendicularly magnetized, the first free layer 200 is in-plane magnetization. The spin-orbit moment providing layer 100 supplies current to pass through, and the in-plane magnetization direction of the first free layer 200 or the second free layer 400 is perpendicular to the current direction. When the current passes through the spin-orbit moment providing layer 100 , the magnetic moment of the first free layer 200 is deflected, and the magnetic moment of the second free layer 400 is deflected by the coupling effect. Under different saturation magnetization and different current conditions, the first free layer 200 and the second free layer 400 can be flipped simultaneously or multi-resistance state storage can be realized. As an optional implementation manner, the materials of the first free layer 200 , the second free layer 400 and the reference layer 600 include one or more of Co, Fe, Ni, B, Pd or Pt. As an optional implementation manner, the material of the barrier layer 500 includes one or more of MgO, MgAl 2 O 4 , and Al 2 O 3 . As a preferred embodiment, the material of one of the coupling layer 300 and the spin-orbit moment providing layer 100 includes one or more of Pt, Pd, Ir or Au, and the material of the other includes Ta One or more of , W or Mo. Among the above-mentioned materials, Pt, Pd, Ir and Au are materials with positive spin Hall angles, and Ta, W and Mo are materials with negative spin Hall angles.
本发明实施例提供的磁隧道结叠层结构具有两个自由层，并且，第一自由层和第二自由层通过耦合作用于磁化方式的配合，能够在面内和垂直方向上都具有磁化分量，即，每个自由层都具有两个方向的磁化分量，两个自由层的磁化分量通过不同的电流驱动形式进行翻转，能够具有多种状态，从而，能够使磁隧道结具有更广泛的应用。该结构既可以实现无外磁场高效翻转，又可以实现多种状态，从而，能够使磁隧道结具有更广泛的应用。在上述的各实施例中，磁隧道结叠层结构的存储单元是通过采用传统的分子束外延、原子层沉积或磁控溅射等方法镀在衬底上，然后进行光刻、刻蚀等传统纳米器件加工工艺制备而成，磁性隧道结的形状为椭圆、菱形、长方形或多边形。对于上述的各个实施来说，可以通过调整耦合层300的厚度实现反铁磁耦合作用。The magnetic tunnel junction stack structure provided by the embodiment of the present invention has two free layers, and the first free layer and the second free layer can have magnetization components in both in-plane and vertical directions through the cooperation of the magnetization mode through the coupling action. , that is, each free layer has magnetization components in two directions, and the magnetization components of the two free layers are flipped through different current-driven forms, and can have multiple states, thereby enabling the magnetic tunnel junction to have a wider range of applications. . The structure can not only realize efficient flipping without external magnetic field, but also realize multiple states, thereby enabling the magnetic tunnel junction to have wider applications. In the above-mentioned embodiments, the memory cells of the magnetic tunnel junction stack structure are plated on the substrate by using traditional molecular beam epitaxy, atomic layer deposition or magnetron sputtering, etc., and then perform photolithography, etching, etc. The shape of the magnetic tunnel junction is ellipse, diamond, rectangle or polygon. For each of the above implementations, the antiferromagnetic coupling effect can be achieved by adjusting the thickness of the coupling layer 300 .
作为一种可选的实施方式，如图4所示，所述耦合层300包括：As an optional implementation manner, as shown in FIG. 4 , the coupling layer 300 includes:
第一覆盖区域，覆盖在第一自由层200的上表面；a first covering area, covering the upper surface of the first free layer 200;
第二覆盖区域，覆盖在所述自旋轨道矩提供层100上表面除所述第一自由层200覆盖区域之外的区域。The second coverage area covers the upper surface of the spin-orbit moment providing layer 100 except for the coverage area of the first free layer 200 .
耦合层300将第一自由层200和自旋轨道矩提供层100进行覆盖，有利于 提高第一自由层200的翻转效率，优先采用耦合层300的反铁磁耦合作用，与其本身自旋霍尔效应叠加。The coupling layer 300 covers the first free layer 200 and the spin-orbit moment providing layer 100, which is beneficial to improve the turnover efficiency of the first free layer 200, and the antiferromagnetic coupling effect of the coupling layer 300 is preferentially used, and the spin Hall itself is preferably used. Effects stack up.
作为一种可选的实施方式，上述的实施方式中，所述耦合层300的自旋霍尔角与所述自选轨道矩提供层的自旋霍尔角的方向相反。在本实施方式中，耦合层300与自旋轨道矩提供层100共同促进第一自由层200磁矩翻转，相当于增大自旋霍尔角，提高翻转效率。As an optional implementation manner, in the above-mentioned implementation manner, the spin Hall angle of the coupling layer 300 is opposite to the spin Hall angle of the self-selected orbital moment providing layer. In this embodiment, the coupling layer 300 and the spin-orbit moment providing layer 100 jointly promote the magnetic moment inversion of the first free layer 200 , which is equivalent to increasing the spin Hall angle and improving the inversion efficiency.
本发明实施例还提供一种存储器，包括：如上述的任意一种磁隧道结叠层结构；其中，所述第一自由层为面内磁化方式，所述第二自由层和所述参考层为垂直磁化方式；所述第一自由层的饱和磁化强度与所述第二自由层的饱和磁化强度满足如下关系：|Ms1-Ms2|/Ms2≥20％；其中，Ms1为第一自由层的饱和磁化强度，Ms2为第二自由层的饱和磁化强度；An embodiment of the present invention further provides a memory, including: any one of the above-mentioned magnetic tunnel junction stack structures; wherein, the first free layer is in an in-plane magnetization manner, the second free layer and the reference layer is a perpendicular magnetization method; the saturation magnetization of the first free layer and the saturation magnetization of the second free layer satisfy the following relationship: |Ms1-Ms2|/Ms2≥20%; wherein, Ms1 is the first free layer saturation magnetization, Ms2 is the saturation magnetization of the second free layer;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流，所述电流的方向在面内且与第一自由层磁化方向垂直。A current source is electrically connected to the spin-orbit moment providing layer, the current source is used to provide various write currents, and the direction of the current is in-plane and perpendicular to the magnetization direction of the first free layer.
本实施例中提供的存储器，无需外部磁场，电流驱动第一自由层200磁矩翻转，通过耦合作用带动第二自由层400翻转，能够实现高低两种阻态。如图2所示，图2为按照本实施方式进行仿真显示的第一自由层200和第二自由层400的磁矩变化。第一自由层200和第二自由层400的在无电流的自由驰豫状态为初始状态。对于面内磁化分量来说，当电流驱动第一自由层200面内磁化分量由正变为负，由于反铁磁作用，第二自由层400面内磁化分量由负变为正。合理范围内，不论第一自由层200的饱和磁化强度和第二自由层400的饱和磁化强度两者大小，在面内的反铁磁作用都成立。而对于垂直磁化分量来说，第一自由层200的饱和磁化强度越大，反铁磁作用对其的影响越小，也就是第一自由层200的垂直磁化分量越小，第一自由层200在翻转过程中，从初始状态 开始进动，当电流足够大，进动的角度大于磁矩初始方向与薄膜界面的夹角，也就是第一自由层200垂直磁化分量由负变为正，所以，反铁磁作用就有一定概率使得第二自由层400的垂直磁化分量由正变为负，实现翻转。由图2可知，第一自由层200和第二自由层400的磁矩都只有正负两个值，磁性隧道结的电阻的变化主要是由与势垒层500直接相连的磁性层(第二自由层400)的磁化方向与参考层600的磁化方向的夹角决定的，因此，磁性隧道结的电阻对应两个电阻状态。The memory provided in this embodiment does not require an external magnetic field, the current drives the magnetic moment of the first free layer 200 to flip, and drives the second free layer 400 to flip through the coupling action, so that two resistance states, high and low, can be realized. As shown in FIG. 2 , FIG. 2 shows the changes of the magnetic moments of the first free layer 200 and the second free layer 400 which are simulated and displayed according to the present embodiment. The free relaxation states of the first free layer 200 and the second free layer 400 in no current state are initial states. For the in-plane magnetization component, when the current drives the in-plane magnetization component of the first free layer 200 from positive to negative, due to the antiferromagnetic effect, the in-plane magnetization component of the second free layer 400 changes from negative to positive. Within a reasonable range, the in-plane antiferromagnetic effect is established regardless of the saturation magnetization of the first free layer 200 and the saturation magnetization of the second free layer 400 . For the perpendicular magnetization component, the larger the saturation magnetization of the first free layer 200 is, the less the antiferromagnetic effect has on it, that is, the smaller the perpendicular magnetization component of the first free layer 200, the smaller the During the inversion process, the precession starts from the initial state. When the current is large enough, the angle of precession is greater than the angle between the initial direction of the magnetic moment and the film interface, that is, the vertical magnetization component of the first free layer 200 changes from negative to positive, so , the antiferromagnetic effect has a certain probability that the perpendicular magnetization component of the second free layer 400 changes from positive to negative to achieve flipping. It can be seen from FIG. 2 that the magnetic moments of the first free layer 200 and the second free layer 400 both have positive and negative values, and the change in the resistance of the magnetic tunnel junction is mainly caused by the magnetic layer (the second one) directly connected to the barrier layer 500 . The included angle between the magnetization direction of the free layer 400) and the magnetization direction of the reference layer 600 is determined. Therefore, the resistance of the magnetic tunnel junction corresponds to two resistance states.
当第一自由层200的饱和磁化强度与第二自由层400的饱和磁化强度满足如下关系：|Ms1-Ms2|/Ms2<20％，反铁磁作用对第一自由层200的影响比较明显，使得第一自由层200的垂直磁化分量较大，第一自由层200在翻转过程中，从初始状态开始进动，最大的进动角度都小于磁矩初始方向与薄膜界面的夹角，即第一自由层200无法进行垂直磁化方向的翻转，也就无法通过耦合作用使得第二自由层400的垂直磁化分量翻转。When the saturation magnetization of the first free layer 200 and the saturation magnetization of the second free layer 400 satisfy the following relationship: |Ms1-Ms2|/Ms2<20%, the influence of the antiferromagnetic effect on the first free layer 200 is obvious. Make the perpendicular magnetization component of the first free layer 200 larger, the first free layer 200 starts to precess from the initial state during the flipping process, and the maximum precession angle is smaller than the angle between the initial direction of the magnetic moment and the film interface, that is, the first A free layer 200 cannot reverse the perpendicular magnetization direction, and thus cannot make the perpendicular magnetization component of the second free layer 400 reverse through coupling.
本发明实施例还提供一种多阻态存储器，包括：An embodiment of the present invention also provides a multi-resistance memory, including:
如上述的任意一种磁隧道结叠层结构；As any one of the above-mentioned magnetic tunnel junction stack structure;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流；使存储器呈现出多种阻态，能够进行多阻态存储，从而，能够提高存储密度。本发明实施例提供的磁隧道结叠层结构具有两个自由层，并且，第一自由层和第二自由层通过耦合作用于磁化方式的配合，能够在面内和垂直方向上都具有磁化分量，即，每个自由层都具有两个方向的磁化分量，两个自由层的磁化分量通过不同的电流驱动形式进行翻转，能够具有多种状态，从而，能够使磁隧道结具有更广泛的应用。该结构既可以实现无外磁场高效翻转，又可以实现多种状态，从而，能够使磁隧道结具有更广泛的应用。A current source is electrically connected to the spin-orbit moment providing layer, and the current source is used to provide various write currents; the memory exhibits various resistance states, enabling multi-resistance state storage, thereby improving storage density . The magnetic tunnel junction stack structure provided by the embodiment of the present invention has two free layers, and the first free layer and the second free layer can have magnetization components in both in-plane and vertical directions through the cooperation of the magnetization mode through the coupling action. , that is, each free layer has magnetization components in two directions, and the magnetization components of the two free layers are flipped through different current-driven forms, and can have multiple states, thereby enabling the magnetic tunnel junction to have a wider range of applications. . The structure can not only realize efficient flipping without external magnetic field, but also realize multiple states, thereby enabling the magnetic tunnel junction to have wider applications.
作为一种可选的实施方式，如图5所示，所述第一自由层为垂直磁化方式，所述第二自由层和所述参考层为面内磁化方式。如图6所示，图6为按照本实施方式进行仿真显示的第一自由层200和第二自由层400的磁矩变化。原理类似，对于第一自由层200和第二自由层400的垂直磁化分量，由于第一自由层200垂直磁化，其本身的垂直磁化分量就非常大，从初始状态开始进动，最大的进动角度都小于磁矩初始方向与薄膜界面的夹角，所以，第一自由层200的垂直磁化分量不翻转，也就不能通过耦合作用使第二自由层400垂直磁化分量翻转。对于第一自由层200和第二自由层400的面内磁化分量，第一自由层200的面内磁化分量能够进行翻转，同时，基于耦合层的反铁磁耦合作用，也能够带动第二自由层400的面内磁化分量进行翻转。综上，第一自由层200的磁矩基本不发生变化，而电流的大小不同会导致第二自由层400的偏转角度不同，磁各向异性、自旋轨道矩与耦合作用之间实现平衡。参考层600为面内磁化且磁化方向固定，磁性隧道结的电阻的大小主要是由第二自由层400磁化方向与参考层600的磁化方向的夹角决定的，夹角的不同对应图6中第二自由层400磁矩的面内磁化分量的不同。如图7所示，磁性隧道结的电阻变化示意图，在不同的写入电流下，磁性隧道结会具有不同的电阻值，从而，具有多阻态的存储方式。As an optional implementation manner, as shown in FIG. 5 , the first free layer is in a perpendicular magnetization manner, and the second free layer and the reference layer are in an in-plane magnetization manner. As shown in FIG. 6 , FIG. 6 shows the changes of the magnetic moments of the first free layer 200 and the second free layer 400 which are simulated and displayed according to the present embodiment. The principle is similar, for the perpendicular magnetization components of the first free layer 200 and the second free layer 400, due to the perpendicular magnetization of the first free layer 200, the perpendicular magnetization component of the first free layer 200 is very large. The angles are smaller than the angle between the initial direction of the magnetic moment and the film interface. Therefore, the perpendicular magnetization component of the first free layer 200 is not reversed, and the perpendicular magnetization component of the second free layer 400 cannot be reversed through coupling. For the in-plane magnetization components of the first free layer 200 and the second free layer 400, the in-plane magnetization components of the first free layer 200 can be reversed, and at the same time, based on the antiferromagnetic coupling effect of the coupling layer, the second free layer can also be driven. The in-plane magnetization component of layer 400 flips. To sum up, the magnetic moment of the first free layer 200 basically does not change, and the magnitude of the current will cause the deflection angle of the second free layer 400 to be different, so that the magnetic anisotropy, the spin-orbit moment and the coupling effect are balanced. The reference layer 600 is magnetized in-plane and the magnetization direction is fixed. The resistance of the magnetic tunnel junction is mainly determined by the angle between the magnetization direction of the second free layer 400 and the magnetization direction of the reference layer 600 . The in-plane magnetization components of the magnetic moments of the second free layer 400 are different. As shown in FIG. 7 , a schematic diagram of the resistance change of the magnetic tunnel junction, under different write currents, the magnetic tunnel junction will have different resistance values, thereby having a multi-resistance storage mode.
本发明实施例还提供一种神经网络计算装置，包括Embodiments of the present invention also provide a neural network computing device, comprising:
如上述的任意一种磁隧道结叠层结构；用于依据多种电流存储对应的权重值；Any one of the above-mentioned magnetic tunnel junction stack structures; used for storing corresponding weight values according to a variety of currents;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流。A current source is electrically connected to the spin-orbit torque providing layer, and the current source is used to provide various write currents.
在上述的神经网络计算装置中，由于每个磁隧道结叠层结构的每个存储单 元都具有多个阻态，从而，可以将阻态与权重值进行对应，神经网络计算过程中，不需要将权重值转换为二进制进行存储，一个存储单元就可以完成一个权重的存储，在使用该权重时，读取一个存储单元即可得到该权重，省去了二进制转换过程，从而，能够提高神经网络计算效率。在本实施例中，能够通过第一自由层200或第二自由层400的磁矩的多个方向，使磁性隧道结表现出多个阻态，从而，能够实现多个存储状态的存储。In the above-mentioned neural network computing device, since each storage unit of each magnetic tunnel junction stack structure has a plurality of resistance states, the resistance states can be corresponding to the weight values. Convert the weight value to binary for storage, and one storage unit can complete the storage of a weight. When using the weight, reading a storage unit can get the weight, eliminating the binary conversion process, thereby improving the neural network. Computational efficiency. In this embodiment, the magnetic tunnel junction can exhibit multiple resistance states through multiple directions of the magnetic moments of the first free layer 200 or the second free layer 400 , so that the storage of multiple storage states can be realized.
本发明实施例还提供一种自旋振荡器，包括：An embodiment of the present invention also provides a spin oscillator, including:
如上述的任意一种磁隧道结叠层结构；As any one of the above-mentioned magnetic tunnel junction stack structure;
电流源，与所述自旋轨道矩提供层电连接，所述电流源用于向所述自旋轨道矩提供层提供电流所述电流大于所述第一自由层的翻转电流的三倍。如图3所示，图3为按照本实施方式进行仿真显示，当持续施加足够大的电流时(例如磁化翻转电流的3倍以上时)，第一自由层200和第二自由层400的磁矩变化，由图可知，第一自由层200和第二自由层400的磁矩都产生了振荡现象，其中第二自由层400的磁矩振荡幅度大，信号强，更容易被接收。因此，该结构可以应用于微波振荡器。a current source electrically connected to the spin-orbit torque providing layer, the current source for supplying a current to the spin-orbit torque providing layer, the current being greater than three times the flipping current of the first free layer. As shown in FIG. 3 , which is simulated according to this embodiment, when a sufficiently large current is continuously applied (for example, when the magnetization reversal current is more than three times the current), the magnetic properties of the first free layer 200 and the second free layer 400 As can be seen from the figure, the magnetic moments of the first free layer 200 and the second free layer 400 both produce oscillation phenomenon, wherein the magnetic moment of the second free layer 400 has a large oscillation amplitude and a strong signal, and is easier to be received. Therefore, this structure can be applied to microwave oscillators.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art who is familiar with the technical scope disclosed by the present invention can easily think of changes or substitutions. All should be included within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (10)

  1. 一种磁隧道结叠层结构，其特征在于，包括：由下向上依次层叠的自旋轨道矩提供层、第一自由层、耦合层、第二自由层、势垒层和参考层；其中，A magnetic tunnel junction stack structure, comprising: a spin-orbit moment providing layer, a first free layer, a coupling layer, a second free layer, a potential barrier layer and a reference layer stacked in sequence from bottom to top; wherein,
    所述第一自由层和所述第二自由层的其中一个为面内磁化方式，另一个为垂直磁化方式；One of the first free layer and the second free layer is in-plane magnetization, and the other is perpendicular magnetization;
    所述参考层的磁化方式与第二自由层的磁化方式相同。The magnetization of the reference layer is the same as the magnetization of the second free layer.
  2. 根据权利要求1所述磁隧道结叠层结构，其特征在于，所述耦合层包括：The magnetic tunnel junction stack structure according to claim 1, wherein the coupling layer comprises:
    第一覆盖区域，覆盖在第一自由层的上表面；a first covering area, covering the upper surface of the first free layer;
    第二覆盖区域，覆盖在所述自旋轨道矩提供层上表面除所述第一自由层覆盖区域之外的区域。The second covering area covers the area on the upper surface of the spin-orbit moment providing layer except the covering area of the first free layer.
  3. 根据权利要求2所述磁隧道结叠层结构，其特征在于，所述耦合层的自旋霍尔角与所述自选轨道矩提供层的自旋霍尔角的方向相反。The magnetic tunnel junction stack structure according to claim 2, wherein the spin Hall angle of the coupling layer is opposite to the spin Hall angle of the self-selected orbit moment providing layer.
  4. 根据权利要求2所述磁隧道结叠层结构，其特征在于，所述耦合层和所述自旋轨道矩提供层的其中一个的材料包括Pt、Pd、Ir或Au中的一种或几种，另一个的材料包括Ta、W或Mo中的一种或几种。The magnetic tunnel junction stack structure according to claim 2, wherein the material of one of the coupling layer and the spin-orbit moment providing layer comprises one or more of Pt, Pd, Ir or Au , and another material includes one or more of Ta, W or Mo.
  5. 根据权利要求1所述磁隧道结叠层结构，其特征在于，所述第一自由层、第二自由层和参考层的材料包括Co、Fe、Ni、B、Pd或Pt中的一种或几种；所述势垒层的材料包括MgO、MgAl 2O 4或Al 2O 3中的一种或几种。 The magnetic tunnel junction stack structure according to claim 1, wherein the material of the first free layer, the second free layer and the reference layer comprises one of Co, Fe, Ni, B, Pd or Pt or Several; the material of the barrier layer includes one or more of MgO, MgAl 2 O 4 or Al 2 O 3 .
  6. 一种存储器，其特征在于，包括：A memory, characterized in that, comprising:
    如权利要求1-5所述的任意一种磁隧道结叠层结构；其中，所述第一自由层为面内磁化方式，所述第二自由层和所述参考层为垂直磁化方式；所述第一 自由层的饱和磁化强度与所述第二自由层的饱和磁化强度满足如下关系：|Ms1-Ms2|/Ms2≥20％；其中，Ms1为第一自由层的饱和磁化强度，Ms2为第二自由层的饱和磁化强度；The magnetic tunnel junction stack structure according to any one of claims 1-5; wherein, the first free layer is in an in-plane magnetization mode, and the second free layer and the reference layer are in a perpendicular magnetization mode; The saturation magnetization of the first free layer and the saturation magnetization of the second free layer satisfy the following relationship: |Ms1-Ms2|/Ms2≥20%; wherein, Ms1 is the saturation magnetization of the first free layer, and Ms2 is the saturation magnetization of the second free layer;
    电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流，所述电流的方向在面内且与第一自由层磁化方向垂直。A current source is electrically connected to the spin-orbit moment providing layer, the current source is used to provide various write currents, and the direction of the current is in-plane and perpendicular to the magnetization direction of the first free layer.
  7. 一种多阻态存储器，其特征在于，包括：A multi-resistance memory, comprising:
    如权利要求1-5所述的任意一种磁隧道结叠层结构；The magnetic tunnel junction stack structure according to any one of claims 1-5;
    电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流。A current source is electrically connected to the spin-orbit torque providing layer, and the current source is used to provide various write currents.
  8. 根据要求7所述储器，其特征在于，所述第一自由层为垂直磁化方式，所述第二自由层和所述参考层为面内磁化方式。The reservoir according to claim 7, wherein the first free layer is of a perpendicular magnetization method, and the second free layer and the reference layer are of an in-plane magnetization method.
  9. 一种神经网络计算装置，其特征在于，包括A neural network computing device, characterized in that it includes
    电流源，与所述自旋轨道矩提供层电连接，所述电流源用于提供多种写入电流；a current source, electrically connected to the spin-orbit torque providing layer, the current source is used to provide various write currents;
    如权利要求1-5所述的任意一种磁隧道结叠层结构；用于依据所述多种电流存储对应的权重值。The magnetic tunnel junction stack structure according to any one of claims 1-5; used for storing corresponding weight values according to the multiple currents.
  10. 一种自旋振荡器，其特征在于，包括：A spin oscillator, characterized in that it includes:
    如权利要求1-5所述的任意一种磁隧道结叠层结构；The magnetic tunnel junction stack structure according to any one of claims 1-5;
    电流源，与所述自旋轨道矩提供层电连接，所述电流源用于向所述自旋轨道矩提供层提供电流，所述电流大于所述第一自由层的翻转电流的三倍。a current source, electrically connected to the spin-orbit torque providing layer, the current source for providing a current to the spin-orbit torque providing layer, the current being greater than three times the flipping current of the first free layer.
PCT/CN2021/128688 2020-12-11 2021-11-04 Magnetic tunnel junction stack structure, memory, and neural network computing device WO2022121572A1 (en)

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