WO2022118517A1 - Production method for conductive part, production method for electronic component including conductive part, production method for product made from electronic component including conductive part, conductive part, electronic component including conductive part, and product incorporating electronic component including conductive part - Google Patents

Production method for conductive part, production method for electronic component including conductive part, production method for product made from electronic component including conductive part, conductive part, electronic component including conductive part, and product incorporating electronic component including conductive part Download PDF

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Publication number
WO2022118517A1
WO2022118517A1 PCT/JP2021/033122 JP2021033122W WO2022118517A1 WO 2022118517 A1 WO2022118517 A1 WO 2022118517A1 JP 2021033122 W JP2021033122 W JP 2021033122W WO 2022118517 A1 WO2022118517 A1 WO 2022118517A1
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Prior art keywords
conductor
region
conductive part
melting
metal
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PCT/JP2021/033122
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French (fr)
Japanese (ja)
Inventor
大輔 田ノ岡
Original Assignee
株式会社ブイ・テクノロジー
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Priority to CN202180076762.8A priority Critical patent/CN116569660A/en
Priority to KR1020237014136A priority patent/KR20230113533A/en
Publication of WO2022118517A1 publication Critical patent/WO2022118517A1/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/08Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by electric discharge, e.g. by spark erosion
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/245Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/247Finish coating of conductors by using conductive pastes, inks or powders

Definitions

  • the present invention relates to a method for manufacturing a conductive structure using a calcined metal ink using a metal ink and a conductive structure.
  • Electronic components with conductors as conductors are made on the substrate.
  • the conductor there are various materials for the conductor, and for example, titanium, aluminum, and an alloy thereof, which form a nanometer-order natural oxide layer on the surface of the conductor, may be used as the conductor material. These metals are extremely susceptible to oxidation in the atmosphere and form a natural oxide layer.
  • the natural oxide layer is an insulator, and all parts that come into contact with the atmosphere are covered with the natural oxide layer.
  • an insulating layer such as SiO, SiN, and SiON may be formed by a plasma CVD method on a wiring layer such as aluminum as in Patent Document 2.
  • the present invention comprises a first step of laminating a second conductor on a first conductor having an insulating layer on its surface, and the first conductor and the second conductor including the insulating layer.
  • the problem was solved by using a method for manufacturing a conductive portion, which includes a second step of melting to form a molten region and forming a hole surrounded by the molten region in the center of the molten region.
  • another aspect of the present invention includes a first conductor, a second conductor, and a molten region, the first conductor has an insulating layer on the surface, and the second conductor has a surface.
  • the melted region is laminated on the first conductor, and the melted region is a region where the first conductor and the second conductor including the insulating layer are melted, and the melted region is located in the center of the melted region.
  • the problem was solved by using a conductive portion characterized by having a hole surrounded by a region.
  • A A conceptual diagram of a firing process of a firing metal ink conductor by scanning a firing laser.
  • B Enlarged view of metal ink.
  • C Enlarged view of fired metal ink.
  • melting process Explanatory drawing of melting process.
  • A Cross-sectional view of a fired metal ink conductor obtained by firing metal ink.
  • B Cross-sectional view of a state in which a melting region is created by a melting laser.
  • C is a cross-sectional view when the pulse energy of the melting laser is changed and applied to three places, and the depth affected by the melting laser is changed.
  • metal ink before firing is simply referred to as "metal ink”
  • metal ink after firing is referred to as "firing metal ink”.
  • the insulating layer includes a natural oxide layer (insulating layer) formed by natural oxidation on the surface of a metal conductor (first conductor) made of aluminum or the like as a main raw material.
  • the insulating layer includes not only natural oxidation but also those made by artificial treatment.
  • a metal conductor (first conductor) coated with an insulating layer made of another material is also included in the present invention.
  • the insulating layer also includes a layer having a higher electric resistance than the metal conductor (first conductor), such as a stain on the surface of the metal conductor (first conductor). Is done.
  • the "electronic component” of the present invention if some element and another element are connected by a conducting wire, they are included in the "electronic component" of the present invention.
  • the “electronic component” of the present invention also includes a circuit board such as a printed circuit board.
  • Example 1 In Example 1 shown in FIGS. 1 to 5, the first conductor A having the natural oxide layer (insulating layer B) 721 on the surface is a metal conductor 72, and the second conductor C is a fired metal ink conductor 27. This is an example of forming a conductive portion 9 between both conductors. Neither the first conductor A nor the second conductor C is limited in terms of the material thereof, but Example 1 is an example in which the metal ink 2 is used for the second conductor C. This is to explain an embodiment in which the metal ink 2 is used for repairing a disconnection or the like. For example, the wiring of the circuit board of a flat panel display may be broken due to dust or dirt adhering to the board during the manufacturing process.
  • Example 1 shows an example, and the present invention does not exclude the use of a second conductor C made of a material different from that of the metal ink.
  • the metal conductor (first conductor A) 72 is mainly composed of a metal such as aluminum or titanium that naturally oxidizes in the atmosphere to form a natural oxide layer (insulating layer B) 721 on the surface.
  • FIG. 1 is an explanatory diagram of a firing process of the metal ink 2.
  • FIG. 1A is a conceptual diagram of a firing process of a firing metal ink conductor (second conductor C) 27 by scanning with a firing laser 3.
  • a metal conductor (first conductor A) 72 is disposed on the substrate 7.
  • the metal conducting wire (first conductor A) 72 is a conducting wire containing aluminum as a main component, and a natural oxide layer (insulating layer B) 721 on the order of several nanometers is formed on the surface thereof.
  • the metal ink 2 is applied onto the natural oxide layer (insulating layer B) 721 of the metal conductor (first conductor A).
  • FIG. 1B is an enlarged view of the metal ink 2.
  • the metal ink 2 is obtained by converting highly conductive metals such as gold, silver, and copper into nanoparticles and dispersing them in an organic solvent 26.
  • the melting point of metal drops dramatically as it becomes nanoparticles.
  • the organic substance 25 is adsorbed on the surface of the metal nanoparticles 24, and the organic substances 25 disperse the metal nanoparticles 24 in the organic solvent 26 without aggregating them.
  • the metal ink 2 When the metal ink 2 is heated by irradiating it with a firing laser 3 or infrared rays, the organic solvent 26 evaporates, the organic matter 25 on the surface of the metal nanoparticles 24 is desorbed, and the metal nanoparticles 24 agglomerate and melt. It becomes a metal block and becomes conductive.
  • the heating means for firing is appropriate.
  • a firing laser 3 was used for firing.
  • the absorption wavelength of the metal ink 2 varies depending on the type and particle size of the metal, but is around 400 nm in the metal ink 2 containing the metal nanoparticles 24 containing silver as a main component having a particle size of 20 nm used in Example 1.
  • the firing laser 3 used in Example 1 As the firing laser 3 used in Example 1, a continuously oscillating semiconductor laser having a wavelength near the absorption wavelength was used.
  • FIG. 1C is an enlarged view of the fired metal ink conductor wire (second conductor C) 27, and it can be seen that the metal nanoparticles 24 are fused to each other to form a metal lump. Only the portion irradiated with the firing laser 3 becomes the fired metal ink conductor wire (second conductor C) 27, and becomes the fired metal ink conductor wire (second conductor C) 27 having conductivity. As shown in FIG. 1A, the firing laser 3 is scanned left and right along the metal ink 2 as shown by an arrow, fires the metal ink 2, and the lower metal conductor (first conductor A) 72. A fired metal ink lead wire (second conductor C) 27 is laminated on the top.
  • the [metal ink coating step] and the [metal ink firing step] are combined, and (first step) firing is performed on a metal conductor (first conductor A) 721 having a natural oxide layer (insulating layer B) 721 on the surface. This is a step of laminating the metal ink conductor wire (second conductor C) 27.
  • the laminated structure includes a metal conductor (first conductor A) 72 and a fired metal ink conductor (second conductor C) 27, and the metal conductor (first conductor A) 72 is A natural oxide layer (insulation layer B) 721 is provided on the surface thereof, and the fired metal ink conductor (second conductor C) 27 is a natural oxide layer (insulation layer B) of the metal conductor (first conductor A) 72. ) It will be laminated on 721.
  • FIG. 2 is an explanatory diagram of the melting process.
  • FIG. 2A is a cross-sectional view of a fired metal ink conductor 27 obtained by firing the metal ink 2.
  • FIG. 2A shows a state in which firing is completed in the above-mentioned [metal ink firing step].
  • the natural oxide layer (insulating layer B) 721 is sandwiched between the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27. , There is not enough conductivity to function as the conductive portion 9.
  • FIG. 2B is a cross-sectional view of a state in which the melting region 8 is created by the melting laser 4.
  • the output of the melting laser 4 may vary depending on the thickness of the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27, the type of metal, and the like. It is not preferable that the influence of the melting laser 4 extends to the substrate 7, and it is preferable that the output affects at least the natural oxide layer (insulating layer B) 721. More preferably, the output extends beyond the natural oxide layer (insulating layer B) 721 to the metal conductor (first conductor A) 72.
  • the melting laser 4 destroys the natural oxide layer (insulating layer B) 721, and silver derived from the fired metal ink conductor (second conductor C) 27 and aluminum derived from the metal conductor (first conductor A) 72.
  • a molten region 8 in which aluminum oxide derived from the natural oxide layer (insulating layer B) 721 is mixed is formed.
  • a hole 74 that is a trace of metal evaporation is opened in the central portion where the melting laser 4 hits.
  • the molten region 8 indicated by hatching is formed on the inner wall portion of the hole 74.
  • the molten region 8 contains a large amount of highly conductive aluminum and silver, and only a few nanometers of natural oxide layer (insulating layer B) 721 is mixed, so that the region has significantly high conductivity. Become.
  • the metal conductor (first conductor A) 72 including the natural oxide layer (insulating layer B) 721 and the fired metal ink conductor (second conductivity) are included.
  • the step of melting the body C) 27 to form a molten region and forming a hole 74 surrounded by the molten region 8 at the center of the molten region 8 is performed.
  • the molten region 8 in which the natural oxide layer (insulating layer B) 721, the fired metal ink conductor wire (second conductor C) 27, and the metal conductor wire (first conductor A) 72 are melted is formed.
  • a hole 74 surrounded by the melting region 8 is provided at the center of the melting region 8.
  • FIG. 2C is a cross-sectional view when the pulse energy of the melting laser 4 is changed and applied to three places, and the depth affected by the melting laser 4 is changed.
  • FIG. 2 is a conceptual diagram, and low output, medium output, and high output are comparisons of pulse energies in this figure.
  • a low-power pulse energy melting laser 4 is irradiated.
  • the molten region 8 remains within the range of the fired metal ink conductor (second conductor C) 27, and the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27. No improvement in conductivity can be expected.
  • the melting laser 4 having a medium output pulse energy is irradiated.
  • the effect of the melting laser 4 extends to the vicinity of the natural oxide layer (insulating layer B) 721, and it is between the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27.
  • the thickness of the fired metal ink conductor (second conductor C) 27 is not uniform, so that the conductivity may not be improved as expected.
  • a high-power pulse energy melting laser 4 is irradiated.
  • the molten region 8 is formed beyond the natural oxide layer (insulating layer B) 721 of the metal conductor (first conductor A) 72, and is formed by the metal conductor (first conductor A) 72 and the fired metal ink conductor.
  • the conductivity between (second conductor C) 27 is surely improved.
  • the metal ink 2 is applied to each portion forming the conductive portion 9, and the coating conditions of the respective portions are not exactly the same. Therefore, the conditions (thickness) of the fired metal ink lead wire (second conductor C) 27 are applied. Etc.) is not constant. Therefore, by irradiating the melting laser 4 at two or more locations, preferably three locations, by changing the pulse energy, it is possible to reliably determine the output suitable for the conditions without conducting an experiment for each conductive portion forming location. Conductivity can be ensured. The pulse width and the number of irradiations may be changed.
  • the pulse energy of the melting laser 4 was changed and applied to three points, but it may be two or more points.
  • another step has a different depth of the melting region at a position different from the melting region formed in the second step, following the second step.
  • a third step of creating a melting region may be added.
  • the melting regions are provided at two or more locations and the depths of the melting regions are different from each other, the conductivity can be surely secured.
  • the melting laser 4 set so that the hole 74 is formed by the pulse energy is used.
  • the hole 74 By forming a hole 74 surrounded by the melting region 8 at the center of the melting region 8, it is possible to know the depth at which the melting region 8 is formed. Further, by forming the hole 74, heat is released through the hole 74, and the melting region 8 can be quickly cooled.
  • the thermal energy affects the members in the vicinity of the molten region 8, and particularly when the substrate 7 in which the organic layer or the like is close to the molten region 8 is irradiated with a laser, the organic layer may be altered.
  • the melting laser 4 set to form a hole 74 by irradiating a nanosecond pulse laser with a high output as in the present invention forms a minute hole 74 penetrating the natural oxide layer (insulating layer B) 721. do.
  • the heat of the melting region 8 is also dissipated from the hole 74 to increase the cooling rate, and the influence of the heat can be limited to a very small region around the melting region 8.
  • the melting region 8 becomes large and the range affected by heat also becomes large.
  • FIG. 3 which corresponds to a comparative experiment, is an explanatory diagram of a range in which heat is affected as the irradiation process progresses when laser irradiation is performed using a welding laser 41 that does not form a hole 74.
  • FIG. 3A is a state diagram immediately after irradiation
  • FIG. 3B is a state diagram in which the molten region 8 does not extend to the natural oxide layer (insulating layer B) 721
  • FIG. 3C is a molten region. 8 is a phase diagram in which 8 exceeds the natural oxide layer (insulation layer B) 721.
  • the melting region 8 immediately after irradiation is small, but heat is diffused by heat conduction from the irradiation region of the welding laser 41 that does not form the hole 74.
  • the molten region 8 gradually expands as shown in FIG. 3 (B).
  • heat conduction continues, and the molten region 8 gradually expands, forming a molten region 8 larger than the irradiation region of the welding laser 41 that does not form a hole 74 as shown in FIG. 3C, and a natural oxide layer is formed.
  • (Insulation layer B) Melts 721.
  • the temperature of the melting region 8 reaches the melting point of the metal and is extremely high, and the periphery of the melting region 8 is a region 412 affected by heat due to heat conduction. At this time, heat is dissipated only from the surface of the fired metal ink conductor (second conductor C) 27, and the larger the volume of the molten region 8, the more the heat dissipated in proportion to the surface area cannot catch up.
  • the region 412 affected by heat is greatly expanded by the high-temperature metal accumulated in the molten region 8 having an increased volume.
  • the hole 74 is formed in the center of the molten region 8 as shown in FIG. 2, the metal in the molten region 8 is cooled quickly.
  • Using the melting laser 4 that forms the hole 74 in this way can significantly reduce the area 412 affected by heat as compared to using the welding laser 41 that does not form the hole 74.
  • Experiment 1 Experiment showing the relationship between electrical resistance and pulse energy
  • Experiment 1 is an experiment to investigate how the electric resistance changes before and after the natural oxide layer (insulating layer B) 721 is destroyed by changing the depth of the molten region 8.
  • a sample for irradiation of the welding laser 4 a sample in which the metal ink 2 was applied onto the metal lead wire 72 on the substrate 7 and fired to form the fired metal ink lead wire 27 was prepared. Then, the sample was irradiated with the melting laser 4 under different conditions.
  • the pulse energy of the melting laser 4 is changed under four conditions of 100, 200, 250, and 300 ⁇ J. In addition, the conditions other than the pulse energy are the same.
  • the electrical resistance was 340 ⁇ on average, and there was no improvement in conductivity compared to before irradiation with the melting laser 4. It is presumed that the influence of the melting laser 4 is limited to the range of the fired metal ink lead wire (second conductor C) 27 as shown in FIGS. 2C and 2A.
  • the electrical resistance was 50 ⁇ on average, and a significant improvement in conductivity was observed. It is presumed that the influence of the melting laser 4 remains in the vicinity of the natural oxide layer (insulating layer B) 721 as shown in FIGS. 2 (C) and 2 (b).
  • the average electrical resistance dropped sharply to near 0 ⁇ . It is presumed that the natural oxide layer (insulating layer B) 721 is melted, and the influence of the melting laser 4 is exerted on the metal conductor (first conductor A) 72 as shown in FIGS. 2 (C) and 2 (c). It is presumed that it has reached.
  • the error bar (3 ⁇ ) remained about 30 ⁇ on one side and about 60 ⁇ on both sides, and there was a large variation in the observed electrical resistance.
  • the error bar (3 ⁇ ) was 2 to 2. It is 3 ⁇ .
  • the imaging sample was prepared as follows and photographed. (1) The substrate 7 having the conductive portion 9 made as described above was used as a sample, and was coated with a protective film 73 as a pretreatment for performing the next electron beam cutting. (2) The entire substrate 7 was cut with an electron beam, and a cross section was cut out. (3) The sample prepared as described above was photographed with a scanning electron microscope from an angle at which the cross section can be seen.
  • the hatched protective film 73 of FIG. 5B is coated at the time of sample preparation and does not exist in the original conductive portion 9.
  • a hole 74 is formed in the region irradiated with the melting laser 4.
  • the boundary between the calcined metal ink conductor (second conductor C) 27 and the metal conductor (first conductor A) 72, which should originally exist, is blurred or completely disappeared. From this, the metal conductor (first conductor A) 72 including the natural oxide layer (insulation layer B) 721 and the fired metal ink conductor (second conductor C) 27 are melted to form a melted region 8. You can see that there is.
  • Example 2 is an application example of the present invention.
  • 6A and 6B are explanatory views of the second embodiment, FIG. 6A is a plan view of a substrate 7 of a TFT liquid crystal panel, and FIG. 6B is an enlarged view of a detour circuit provided in FIG. 6A. be.
  • a field effect transistor 12 is mounted on a substrate 7 of a TFT liquid crystal panel of an LCD (liquid crystal display), and a metal conducting wire (first conductor A) 72 containing aluminum as a main component is wired.
  • a defect (disconnection) 722 which is usually discarded as a defective product.
  • the substrate 7 having the defect (disconnection) 722 is repaired by the detour circuit 76 created by the fired metal ink conductor wire (second conductor C) 27, whereby the product yield is improved.
  • the defect (disconnection) 722 There are various possible causes for the defect (disconnection) 722, but the main cause is the adhesion of dust. It is possible to connect the defect (disconnection) 722 directly and linearly at the shortest distance, but since there is a possibility that dust or the like may remain, the detour circuit 76 is intentionally used. Of course, the defect (disconnection) 722 may be directly and linearly connected at the shortest distance for repair.
  • the detour circuit 76 using the silver metal ink 2 is fired by a firing laser 3 (not shown) to form a fired metal ink conductor wire (second conductor C) 27.
  • a firing laser 3 not shown
  • the metal conductor (first conductor A) 72, the natural oxide layer (insulation layer B) 721, and the fired metal ink conductor (second conductor C) 27 are in this order.
  • the structure is laminated from below.
  • the melting laser 4 is irradiated to each conductive portion 9 at three locations with different pulse energy intensities. (See Fig. 2 (C))
  • the conductive portion 9 is formed in the molten region 8 formed around the three holes 74. If any one of the three molten regions 8 in which the intensity of the pulse energy is changed reaches the natural oxide layer (insulating layer B) 721, the metal conductor (first conductor A) 72 and the fired metal ink conductor (first) The electrical resistance between the conductors C) 27 of 2 is reduced to the extent that it does not affect the operation of the TFT liquid crystal panel. Further, since the hole 74 surrounded by the melting region 8 is formed in the center of the melting region 8, the metal melted in the melting region 8 releases heat from the hole 74 and is quickly cooled, so that the metal in the melting region 8 is cooled quickly. The influence of heat on the surroundings is reduced.
  • the substrate (electronic component) of the TFT liquid crystal panel can be used in the manufacturing method as in the second embodiment. Further, the present invention provides a molten region 8 in which the metal conductor (first conductor A) 72 including the natural oxide layer (insulation layer B) 721 and the fired metal ink conductor (second conductor C) 27 are melted. It is possible to provide a substrate (electronic component) of a TFT liquid crystal panel having the obtained conductive portion 9.
  • TFT liquid crystal panel by assembling the substrate (electronic component) of the TFT liquid crystal panel provided as described above with other parts.
  • a product called a liquid crystal display by assembling the TFT liquid crystal panel (electronic component) provided as described above with other components. Since the details and manufacturing method of the TFT liquid crystal panel and the liquid crystal display technique are widely known, they will not be described here.
  • FIG. 7 is a cross-sectional view of the conductive portion 9 of the third embodiment.
  • Examples 1 and 2 were examples in which the natural oxide layer 721 was used as the insulating layer B.
  • Example 3 is an embodiment in which an insulating layer B is artificially formed on the surface of a metal conductor (first conductor A). Further, the second conductor C does not have to be a fired metal ink lead wire. Further, the same metal material may be used for the first conductor A and the second conductor C.
  • the laminated circuit board 5 has a first conductor A, an insulating layer B, a second conductor C, an insulating layer B, a first conductor A, an insulating layer B, and a second conductor C.
  • a large number of conductors are laminated with the insulating layer B interposed therebetween.
  • the conductive portion 9 is formed in the melting region 8 in which the first conductor A, the second conductor C, and the insulating layer B are melted. To.
  • the melting region 8 becomes the conductive portion 9, and all the laminated conductors can be made conductive.

Abstract

Provided is a production method for simply forming a conductive part between a conductor that has an insulating layer at the surface thereof and another conductor. The present invention is a production method for a conductive part that includes a first step for layering a second conductor on a first conductor that has an insulating layer at the surface thereof and a second step for fusing the second conductor and the first conductor, including the insulating layer, to form a fused region and forming a hole that is surrounded by the fused region in the center of the fused region.

Description

導電部の製造方法、導電部を含む電子部品の製造方法、導電部を含む電子部品を組み立てた製品の製造方法、導電部、導電部を有する電子部品、導電部を含む電子部品を組み込んだ製品Manufacturing method of conductive part, manufacturing method of electronic parts including conductive part, manufacturing method of product assembled with electronic parts including conductive part, conductive part, electronic part having conductive part, product incorporating electronic parts including conductive part
 本発明は、メタルインクを用いた焼成メタルインクを用いた導電構造の製造方法および導電構造に関するものである。 The present invention relates to a method for manufacturing a conductive structure using a calcined metal ink using a metal ink and a conductive structure.
 基板上に導電体を導線とした電子部品が作られている。導電体の材料は多種多様あるが、導電体の表面にナノメートルオーダーの自然酸化層を形成する例えばチタンやアルミニウムおよびその合金が導電体材料として用いられることがある。これらの金属は大気中できわめて酸化しやすく、自然酸化層を形成する。自然酸化層は、絶縁体であり、大気と接触する部分はすべて自然酸化層で覆われてしまう。また、自然酸化層に代えてアルミニウムなどの配線層の上に、SiO、SiN、SiONなどの絶縁層をプラズマCVD法に形成することも特許文献2のように行われることもある。自然酸化層や絶縁層を表面に有する配線や電極の上に、別の配線を重ねて両者の間を通電させようとしても、単に重ねるだけでは、自然酸化層や絶縁層に阻まれて通電させることができない(導電部とならない)。
 そこで、特許文献1のように研磨針で引っ掻き自然酸化層を物理的に破壊し、別の導線を重ねて導電部とすることも行われている。
Electronic components with conductors as conductors are made on the substrate. There are various materials for the conductor, and for example, titanium, aluminum, and an alloy thereof, which form a nanometer-order natural oxide layer on the surface of the conductor, may be used as the conductor material. These metals are extremely susceptible to oxidation in the atmosphere and form a natural oxide layer. The natural oxide layer is an insulator, and all parts that come into contact with the atmosphere are covered with the natural oxide layer. Further, instead of the natural oxide layer, an insulating layer such as SiO, SiN, and SiON may be formed by a plasma CVD method on a wiring layer such as aluminum as in Patent Document 2. Even if you try to energize between the two by stacking another wiring on the wiring or electrode that has a natural oxide layer or insulating layer on the surface, simply stacking it will prevent it from being energized by the natural oxide layer or insulating layer. Cannot (does not become a conductive part).
Therefore, as in Patent Document 1, the natural oxide layer is physically destroyed by scratching with a polishing needle, and another conducting wire is overlapped to form a conductive portion.
特開2000-22306号公報Japanese Unexamined Patent Publication No. 2000-22306 特許第6711614号Patent No. 6711614
 しかしながら、研磨針で引っ掻くなどの物理的な操作は、導線が細くなるにつれて難しくなり作業性が悪化する。しかも、自然酸化層が破壊され金属が露出しても、チタンやアルミニウムは大気中で酸化しやすく、きわめて短時間で再び自然酸化層が形成されてしまう。そのため、確実に導電性のある導電部を形成することが難しかった。
 また、金属配線の表面に被覆される絶縁層についても同様であり、別の配線を重ねる場合、事前に絶縁層を除去する必要があった。
However, physical operations such as scratching with a polishing needle become more difficult as the conductor becomes thinner, and workability deteriorates. Moreover, even if the natural oxide layer is destroyed and the metal is exposed, titanium and aluminum are easily oxidized in the atmosphere, and the natural oxide layer is formed again in an extremely short time. Therefore, it is difficult to surely form a conductive portion having conductivity.
The same applies to the insulating layer coated on the surface of the metal wiring, and it is necessary to remove the insulating layer in advance when another wiring is overlapped.
 本発明は、絶縁層を表面に有する導電体と別の導電体との間に、簡略に導電部を作る製造方法の提供および新たな導電部の提供を目的(課題)とする。 It is an object (problem) of the present invention to provide a manufacturing method for simply forming a conductive portion between a conductor having an insulating layer on the surface and another conductor, and to provide a new conductive portion.
 本発明は絶縁層を表面に有する第1の導電体の上に、第2の導電体を積層する第1工程と、前記絶縁層を含め前記第1の導電体と前記第2の導電体を溶融し溶融領域を作ると共に、前記溶融領域の中心に前記溶融領域で周囲を囲まれた穴を形成する第2工程を含む、導電部の製造方法とすることで課題を解決した。 The present invention comprises a first step of laminating a second conductor on a first conductor having an insulating layer on its surface, and the first conductor and the second conductor including the insulating layer. The problem was solved by using a method for manufacturing a conductive portion, which includes a second step of melting to form a molten region and forming a hole surrounded by the molten region in the center of the molten region.
 また、本発明の別の態様は、第1の導電体と第2の導電体と溶融領域を備え、第1の導電体は、表面に絶縁層を有し、前記第2の導電体は、前記第1の導電体に積層されており、前記溶融領域は、前記絶縁層を含め前記第1の導電体と前記第2の導電体が溶融した領域であり、前記溶融領域の中心に前記溶融領域で周囲を囲まれた穴を有していることを特徴とする導電部とすることで課題を解決した。 Further, another aspect of the present invention includes a first conductor, a second conductor, and a molten region, the first conductor has an insulating layer on the surface, and the second conductor has a surface. The melted region is laminated on the first conductor, and the melted region is a region where the first conductor and the second conductor including the insulating layer are melted, and the melted region is located in the center of the melted region. The problem was solved by using a conductive portion characterized by having a hole surrounded by a region.
 絶縁層を表面に有する導電体とその上に重ねた別の導電体との間に、簡略に導電性のある導電部を作ることが出来た。 It was possible to simply create a conductive part with conductivity between a conductor having an insulating layer on its surface and another conductor layered on it.
メタルインクの焼成工程の説明図。(A)焼成用レーザの走査による焼成メタルインク導線の焼成工程概念図。(B)メタルインクの拡大図。(C)焼成メタルインクの拡大図。Explanatory drawing of the firing process of metal ink. (A) A conceptual diagram of a firing process of a firing metal ink conductor by scanning a firing laser. (B) Enlarged view of metal ink. (C) Enlarged view of fired metal ink. 溶融工程の説明図。(A)メタルインクを焼成した焼成メタルインク導線の断面図。(B)溶融用レーザで溶融領域を作成した状態の断面図。(C)は溶融用レーザのパルスエネルギーを変えて3箇所に当て、溶融用レーザの影響の及ぶ深度を変えた場合の断面図。Explanatory drawing of melting process. (A) Cross-sectional view of a fired metal ink conductor obtained by firing metal ink. (B) Cross-sectional view of a state in which a melting region is created by a melting laser. (C) is a cross-sectional view when the pulse energy of the melting laser is changed and applied to three places, and the depth affected by the melting laser is changed. 穴を形成しない溶接用レーザを用いてレーザ照射した場合に、照射過程の進行とともに熱の影響が及ぶ範囲の説明図。(B)溶融領域が自然酸化層に及んでいない状態図。(C)溶融領域が自然酸化層を越えた状態図。Explanatory drawing of the range in which heat affects as the irradiation process progresses when laser irradiation is performed using a welding laser that does not form holes. (B) Phase diagram in which the molten region does not extend to the natural oxide layer. (C) A phase diagram in which the molten region exceeds the natural oxide layer. 導電性試験結果。Conductivity test results. 導電部の写真。(A)導電部の断面の走査電子顕微鏡写真。(B) 図5(A)の走査電子顕微鏡写真の説明図。A photo of the conductive part. (A) Scanning electron micrograph of a cross section of a conductive portion. (B) Explanatory view of the scanning electron micrograph of FIG. 5 (A). 実施例2の説明図。(A)TFT液晶パネルの平面図。(B)図6(A)の迂回回路の拡大図。Explanatory drawing of Example 2. FIG. (A) A plan view of a TFT liquid crystal panel. (B) An enlarged view of the detour circuit of FIG. 6 (A). 実施例3の導電部の断面図。Sectional drawing of the conductive part of Example 3. FIG.
 以下、図面を参照して本発明の実施形態を説明する。以下の説明で、異なる図における同一符号は同一機能の部位を示しており、各図における重複説明は適宜省略する。また、一部の図面は、説明のため意図的にデフォルメされており、正確な縮尺で描かれているものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same reference numerals in different figures indicate parts having the same function, and duplicate description in each figure will be omitted as appropriate. Also, some drawings are intentionally deformed for illustration purposes and are not drawn to the correct scale.
[メタルインクの焼成前後の区別]
 以下、焼成前のメタルインクは単に「メタルインク」といい、焼成後のメタルインクは「焼成メタルインク」とすることで区別する。
[Distinguishing before and after firing metal ink]
Hereinafter, the metal ink before firing is simply referred to as "metal ink", and the metal ink after firing is referred to as "firing metal ink".
[導電体]
 「導電体」という言葉には、配線や電極が含まれる。
[conductor]
The term "conductor" includes wiring and electrodes.
[用語に付けられる括弧の意味]
 また、「焼成メタルインク導線(第2の導電体)」などと表記されることがあるが、括弧内の(第2の導電体)は、対応する特許請求の範囲で使用されている用語を示す。
[Meaning of parentheses attached to terms]
In addition, although it may be described as "fired metal ink conductor (second conductor)", the term in parentheses (second conductor) is a term used in the corresponding claims. show.
[絶縁層の意味]
 絶縁層は、アルミニウムなどを主原料とする金属導線(第1の導電体)の表面に自然酸化して形成された自然酸化層(絶縁層)を含む。
 絶縁層には、自然酸化だけでなく人為的処理により作られたものも含まれる。例えば、金属導線(第1の導電体)の上に別の材料からなる絶縁層を被覆したものも本発明に包含される。
 また、本発明において、絶縁層には、金属導線(第1の導電体)の表面に汚れが付いているなどのように、金属導線(第1の導電体)より電気抵抗の高い層も含まれる。
[Meaning of insulating layer]
The insulating layer includes a natural oxide layer (insulating layer) formed by natural oxidation on the surface of a metal conductor (first conductor) made of aluminum or the like as a main raw material.
The insulating layer includes not only natural oxidation but also those made by artificial treatment. For example, a metal conductor (first conductor) coated with an insulating layer made of another material is also included in the present invention.
Further, in the present invention, the insulating layer also includes a layer having a higher electric resistance than the metal conductor (first conductor), such as a stain on the surface of the metal conductor (first conductor). Is done.
 [電子部品]
 本発明において、何らかの素子と別の素子の間が導線で接続されているものであれば、本発明の「電子部品」に含まれる。例えば、本発明の「電子部品」には、プリント基板などの回路基板も含まれる。
[Electronic components]
In the present invention, if some element and another element are connected by a conducting wire, they are included in the "electronic component" of the present invention. For example, the "electronic component" of the present invention also includes a circuit board such as a printed circuit board.
(実施例1)
 図1~図5に示す実施例1は、自然酸化層(絶縁層B)721を表面に有する第1の導電体Aを金属導線72とし、第2の導電体Cを焼成メタルインク導線27としたときに、両導電体の間に導電部9を形成する例である。第1の導電体Aも第2の導電体Cもその素材について限定されるものではないが、第2の導電体Cにメタルインク2を用いる例を実施例1とした。断線等の修復にメタルインク2が使われる態様を説明するためである。例えば、フラットパネルディスプレイの回路基板の配線が製造工程中に基板に付着したゴミや塵などにより断線することがある。このような時、断線した前後の第1の導電体Aの間に第2の導電体Cとしてメタルインク2の迂回回路を作ることにより、修復できる。
 実施例1は一例を示すものであり、本発明は、メタルインクとは異なる素材から成る第2の導電体Cとしたものを用いることを排除するものではない。
(Example 1)
In Example 1 shown in FIGS. 1 to 5, the first conductor A having the natural oxide layer (insulating layer B) 721 on the surface is a metal conductor 72, and the second conductor C is a fired metal ink conductor 27. This is an example of forming a conductive portion 9 between both conductors. Neither the first conductor A nor the second conductor C is limited in terms of the material thereof, but Example 1 is an example in which the metal ink 2 is used for the second conductor C. This is to explain an embodiment in which the metal ink 2 is used for repairing a disconnection or the like. For example, the wiring of the circuit board of a flat panel display may be broken due to dust or dirt adhering to the board during the manufacturing process. In such a case, it can be repaired by forming a detour circuit of the metal ink 2 as the second conductor C between the first conductors A before and after the disconnection.
Example 1 shows an example, and the present invention does not exclude the use of a second conductor C made of a material different from that of the metal ink.
 [絶縁層]
 金属導線(第1の導電体A)72は、アルミニウムやチタンなどの大気中で自然酸化し表面に自然酸化層(絶縁層B)721を形成する金属が主成分となっている。
[Insulation layer]
The metal conductor (first conductor A) 72 is mainly composed of a metal such as aluminum or titanium that naturally oxidizes in the atmosphere to form a natural oxide layer (insulating layer B) 721 on the surface.
 [メタルインク塗布工程]
 図1はメタルインク2の焼成工程の説明図である。図1(A)は焼成用レーザ3の走査による焼成メタルインク導線(第2の導電体C)27の焼成工程概念図である。基板7は、上に金属導線(第1の導電体A)72が配設されている。金属導線(第1の導電体A)72は、アルミニウムを主成分とする導線であり、その表面に数ナノメートルのオーダーの自然酸化層(絶縁層B)721が形成されている。次いで、金属導線(第1の導電体A)の自然酸化層(絶縁層B)721の上にメタルインク2が塗布される。
[Metal ink application process]
FIG. 1 is an explanatory diagram of a firing process of the metal ink 2. FIG. 1A is a conceptual diagram of a firing process of a firing metal ink conductor (second conductor C) 27 by scanning with a firing laser 3. A metal conductor (first conductor A) 72 is disposed on the substrate 7. The metal conducting wire (first conductor A) 72 is a conducting wire containing aluminum as a main component, and a natural oxide layer (insulating layer B) 721 on the order of several nanometers is formed on the surface thereof. Next, the metal ink 2 is applied onto the natural oxide layer (insulating layer B) 721 of the metal conductor (first conductor A).
[メタルインク焼成工程]
 図1(B)はメタルインク2の拡大図である。メタルインク2は、金、銀、銅などの導電性の高い金属をナノ粒子化し、有機溶媒26中に分散させたものである。金属はナノ粒子化することにより融点が劇的に下がる。金属ナノ粒子24の表面には、有機物25が吸着しており、この有機物25により、金属ナノ粒子24同志が凝集することなく有機溶媒26中に分散される。
[Metal ink firing process]
FIG. 1B is an enlarged view of the metal ink 2. The metal ink 2 is obtained by converting highly conductive metals such as gold, silver, and copper into nanoparticles and dispersing them in an organic solvent 26. The melting point of metal drops dramatically as it becomes nanoparticles. The organic substance 25 is adsorbed on the surface of the metal nanoparticles 24, and the organic substances 25 disperse the metal nanoparticles 24 in the organic solvent 26 without aggregating them.
 メタルインク2に焼成用レーザ3や赤外線を照射して加熱すると、有機溶媒26が蒸発するとともに、金属ナノ粒子24表面の有機物25が脱離し、金属ナノ粒子24同志が凝集し、溶融することで金属塊となり導電性を持つようになる。焼成のための加熱手段は適宜である。
 実施例1では焼成に、焼成用レーザ3を使用した。メタルインク2の吸収波長は、金属の種類と粒径によって異なるが実施例1で用いる20nm粒径の銀を主成分とする金属ナノ粒子24を含むメタルインク2では、400nm付近である。実施例1で用いた焼成用レーザ3は、当該吸収波長付近の波長を有する連続発振半導体レーザを使用した。
When the metal ink 2 is heated by irradiating it with a firing laser 3 or infrared rays, the organic solvent 26 evaporates, the organic matter 25 on the surface of the metal nanoparticles 24 is desorbed, and the metal nanoparticles 24 agglomerate and melt. It becomes a metal block and becomes conductive. The heating means for firing is appropriate.
In Example 1, a firing laser 3 was used for firing. The absorption wavelength of the metal ink 2 varies depending on the type and particle size of the metal, but is around 400 nm in the metal ink 2 containing the metal nanoparticles 24 containing silver as a main component having a particle size of 20 nm used in Example 1. As the firing laser 3 used in Example 1, a continuously oscillating semiconductor laser having a wavelength near the absorption wavelength was used.
 図1(C)は焼成メタルインク導線(第2の導電体C)27の拡大図であり、金属ナノ粒子24が互いに融着し金属塊となっていることが分かる。焼成用レーザ3が照射された部位のみが、焼成され焼成メタルインク導線(第2の導電体C)27となり、導電性を有する焼成メタルインク導線(第2の導電体C)27となる。
 図1(A)のように焼成用レーザ3は、矢印で示すようにメタルインク2に沿って左右に走査され、メタルインク2を焼成し、下層の金属導線(第1の導電体A)72上に焼成メタルインク導線(第2の導電体C)27が積層される。
FIG. 1C is an enlarged view of the fired metal ink conductor wire (second conductor C) 27, and it can be seen that the metal nanoparticles 24 are fused to each other to form a metal lump. Only the portion irradiated with the firing laser 3 becomes the fired metal ink conductor wire (second conductor C) 27, and becomes the fired metal ink conductor wire (second conductor C) 27 having conductivity.
As shown in FIG. 1A, the firing laser 3 is scanned left and right along the metal ink 2 as shown by an arrow, fires the metal ink 2, and the lower metal conductor (first conductor A) 72. A fired metal ink lead wire (second conductor C) 27 is laminated on the top.
 [メタルインク塗布工程]と[メタルインク焼成工程]とは、併せて、(第1工程)自然酸化層(絶縁層B)721を表面に有する金属導線(第1の導電体A)721に焼成メタルインク導線(第2の導電体C)27を積層とする工程となる。 The [metal ink coating step] and the [metal ink firing step] are combined, and (first step) firing is performed on a metal conductor (first conductor A) 721 having a natural oxide layer (insulating layer B) 721 on the surface. This is a step of laminating the metal ink conductor wire (second conductor C) 27.
 構造としてみると、積層構造体は、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27を備え、金属導線(第1の導電体A)72は、表面に自然酸化層(絶縁層B)721を有し、焼成メタルインク導線(第2の導電体C)27は、金属導線(第1の導電体A)72の自然酸化層(絶縁層B)721上に積層されているものとなる。 In terms of structure, the laminated structure includes a metal conductor (first conductor A) 72 and a fired metal ink conductor (second conductor C) 27, and the metal conductor (first conductor A) 72 is A natural oxide layer (insulation layer B) 721 is provided on the surface thereof, and the fired metal ink conductor (second conductor C) 27 is a natural oxide layer (insulation layer B) of the metal conductor (first conductor A) 72. ) It will be laminated on 721.
[溶融工程]
 図2は、溶融工程の説明図である。図2(A)は、メタルインク2を焼成した焼成メタルインク導線27の断面図である。上述の[メタルインク焼成工程]で焼成を終えた状態が図2(A)である。
 この時点では、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27との間に、自然酸化層(絶縁層B)721が間に挟まっているため、導電部9として機能するのに十分な導電性がない。
[Melting process]
FIG. 2 is an explanatory diagram of the melting process. FIG. 2A is a cross-sectional view of a fired metal ink conductor 27 obtained by firing the metal ink 2. FIG. 2A shows a state in which firing is completed in the above-mentioned [metal ink firing step].
At this point, the natural oxide layer (insulating layer B) 721 is sandwiched between the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27. , There is not enough conductivity to function as the conductive portion 9.
 図2(B)は溶融用レーザ4で溶融領域8を作成した状態の断面図である。溶融用レーザ4の出力は、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27の厚さや金属の種類などで変わり得る。溶融用レーザ4の影響が基板7まで及ぶと好ましくなく、また、少なくとも自然酸化層(絶縁層B)721にまで影響を及ぶ出力であることが好ましい。より好ましくは、自然酸化層(絶縁層B)721を超えて金属導線(第1の導電体A)72まで影響が及ぶ出力であることが好ましい。 FIG. 2B is a cross-sectional view of a state in which the melting region 8 is created by the melting laser 4. The output of the melting laser 4 may vary depending on the thickness of the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27, the type of metal, and the like. It is not preferable that the influence of the melting laser 4 extends to the substrate 7, and it is preferable that the output affects at least the natural oxide layer (insulating layer B) 721. More preferably, the output extends beyond the natural oxide layer (insulating layer B) 721 to the metal conductor (first conductor A) 72.
 溶融用レーザ4は、自然酸化層(絶縁層B)721を破壊し、焼成メタルインク導線(第2の導電体C)27由来の銀と金属導線(第1の導電体A)72由来のアルミニウムに加え、自然酸化層(絶縁層B)721由来の酸化アルミニウムが混ざった溶融領域8を作る。 The melting laser 4 destroys the natural oxide layer (insulating layer B) 721, and silver derived from the fired metal ink conductor (second conductor C) 27 and aluminum derived from the metal conductor (first conductor A) 72. In addition, a molten region 8 in which aluminum oxide derived from the natural oxide layer (insulating layer B) 721 is mixed is formed.
 溶融用レーザ4が当たった中央部には、図示されるように金属が蒸発した跡となる穴74が開く。ハッチングで示される溶融領域8は、穴74の内壁部に形成される。溶融領域8には、導電性の高いアルミニウムや銀が多く含まれており、高々数ナノメートル分の自然酸化層(絶縁層B)721が混ざっているだけなので、導電性が顕著に高い領域となる。結果的に、溶融用レーザ4の照射により、(第2工程)自然酸化層(絶縁層B)721を含めと金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27を溶融し溶融領域を作ると共に、溶融領域8の中心に溶融領域8で周囲を囲まれた穴74を形成する工程が行われたこととなる。 As shown in the figure, a hole 74 that is a trace of metal evaporation is opened in the central portion where the melting laser 4 hits. The molten region 8 indicated by hatching is formed on the inner wall portion of the hole 74. The molten region 8 contains a large amount of highly conductive aluminum and silver, and only a few nanometers of natural oxide layer (insulating layer B) 721 is mixed, so that the region has significantly high conductivity. Become. As a result, by irradiating the melting laser 4, (second step) the metal conductor (first conductor A) 72 including the natural oxide layer (insulating layer B) 721 and the fired metal ink conductor (second conductivity) are included. The step of melting the body C) 27 to form a molten region and forming a hole 74 surrounded by the molten region 8 at the center of the molten region 8 is performed.
 以上のように、自然酸化層(絶縁層B)721と焼成メタルインク導線(第2の導電体C)27と金属導線(第1の導電体A)72が溶融した溶融領域8が形成され、溶融領域8の中心に溶融領域8で周囲を囲まれた穴74を有しているものとなる。 As described above, the molten region 8 in which the natural oxide layer (insulating layer B) 721, the fired metal ink conductor wire (second conductor C) 27, and the metal conductor wire (first conductor A) 72 are melted is formed. A hole 74 surrounded by the melting region 8 is provided at the center of the melting region 8.
[溶融工程の別態様]
 図2(C)は溶融用レーザ4のパルスエネルギーを変えて3箇所に当て、溶融用レーザ4の影響の及ぶ深さを変えた場合の断面図である。(なお、図2は概念図であり、低出力、中出力、高出力とは、この図のパルスエネルギーを比較したものである。)
[Another aspect of the melting process]
FIG. 2C is a cross-sectional view when the pulse energy of the melting laser 4 is changed and applied to three places, and the depth affected by the melting laser 4 is changed. (Note that FIG. 2 is a conceptual diagram, and low output, medium output, and high output are comparisons of pulse energies in this figure.)
 図2(C)(a)では、低出力のパルスエネルギーの溶融用レーザ4を照射している。溶融領域8が、焼成メタルインク導線(第2の導電体C)27の範囲にとどまっており、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27の間の導電性向上は期待できない。 In FIGS. 2C and 2A, a low-power pulse energy melting laser 4 is irradiated. The molten region 8 remains within the range of the fired metal ink conductor (second conductor C) 27, and the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27. No improvement in conductivity can be expected.
 また、図2(C)(b)では、中出力のパルスエネルギーの溶融用レーザ4を照射している。自然酸化層(絶縁層B)721付近まで溶融用レーザ4の影響が及んでおり、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27の間の導電性向上は期待できるものの、焼成メタルインク導線(第2の導電体C)27の厚さが均一でないため、導電性が期待したほど向上しない場合がある。 Further, in FIGS. 2C and 2B, the melting laser 4 having a medium output pulse energy is irradiated. The effect of the melting laser 4 extends to the vicinity of the natural oxide layer (insulating layer B) 721, and it is between the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27. Although improvement in conductivity can be expected, the thickness of the fired metal ink conductor (second conductor C) 27 is not uniform, so that the conductivity may not be improved as expected.
 図2(C)(c)では、高出力のパルスエネルギーの溶融用レーザ4を照射している。溶融領域8は、金属導線(第1の導電体A)72の自然酸化層(絶縁層B)721を超えて形成されており、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27の間の導電性が確実に向上する。 In FIGS. 2C and 2C, a high-power pulse energy melting laser 4 is irradiated. The molten region 8 is formed beyond the natural oxide layer (insulating layer B) 721 of the metal conductor (first conductor A) 72, and is formed by the metal conductor (first conductor A) 72 and the fired metal ink conductor. The conductivity between (second conductor C) 27 is surely improved.
 メタルインク2は、導電部9を形成する箇所ごとに塗られ、それぞれの箇所の塗布条件が全く同一というわけではないため、焼成メタルインク導線(第2の導電体C)27の条件(厚さ等)が一定しない。そこで、パルスエネルギーを変えて2箇所以上、好ましくは3箇所に溶融用レーザ4を照射することにより、条件に適した出力を決めるための実験を導電部形成箇所ごとに行わなくても、確実に導電性を確保することが出来る。なお、パルス幅や照射回数を変えてもよい。 The metal ink 2 is applied to each portion forming the conductive portion 9, and the coating conditions of the respective portions are not exactly the same. Therefore, the conditions (thickness) of the fired metal ink lead wire (second conductor C) 27 are applied. Etc.) is not constant. Therefore, by irradiating the melting laser 4 at two or more locations, preferably three locations, by changing the pulse energy, it is possible to reliably determine the output suitable for the conditions without conducting an experiment for each conductive portion forming location. Conductivity can be ensured. The pulse width and the number of irradiations may be changed.
 まとめると、図2(c)では、溶融用レーザ4のパルスエネルギーを変えて3箇所に当てたが、2箇所以上であればよい。2箇所以上に溶融領域8の深さの異なる溶融領域8を作るには、第2工程に続いて、第2工程で形成された溶融領域と異なる位置に、溶融領域の深さが異なる別の溶融領域を作る第3工程を追加すればよい。 In summary, in FIG. 2C, the pulse energy of the melting laser 4 was changed and applied to three points, but it may be two or more points. In order to create a melting region 8 having a different depth of the melting region 8 at two or more locations, another step has a different depth of the melting region at a position different from the melting region formed in the second step, following the second step. A third step of creating a melting region may be added.
 また、溶融領域は2箇所以上設けられ、溶融領域の深さが、それぞれ異なっていることにより、確実に導電性を確保することが出来る。 Further, since the melting regions are provided at two or more locations and the depths of the melting regions are different from each other, the conductivity can be surely secured.
 実施例では、パルスエネルギーにより穴74が形成されるように設定された溶融用レーザ4を用いる。溶融領域8の中心に溶融領域8で周囲を囲まれた穴74が形成されることで、溶融領域8が形成された深さを知ることができる。また、穴74が形成されることで、熱が穴74を通って放出され、素早く溶融領域8を冷却できる。一般に熱エネルギーは溶融領域8付近の部材に影響を与え、特に有機層などが溶融領域8に近接している基板7にレーザ照射を行った場合、有機層が変質することもあり得る。しかし、本発明のようなナノ秒パルスレーザを高出力照射して穴74が形成されるように設定した溶融用レーザ4は、自然酸化層(絶縁層B)721を貫く微小な穴74を形成する。溶融領域8の熱は、穴74からも放熱し冷却速度を速め、熱の影響を溶融領域8の周辺のきわめて小さい領域のみに留めることができる。 In the embodiment, the melting laser 4 set so that the hole 74 is formed by the pulse energy is used. By forming a hole 74 surrounded by the melting region 8 at the center of the melting region 8, it is possible to know the depth at which the melting region 8 is formed. Further, by forming the hole 74, heat is released through the hole 74, and the melting region 8 can be quickly cooled. Generally, the thermal energy affects the members in the vicinity of the molten region 8, and particularly when the substrate 7 in which the organic layer or the like is close to the molten region 8 is irradiated with a laser, the organic layer may be altered. However, the melting laser 4 set to form a hole 74 by irradiating a nanosecond pulse laser with a high output as in the present invention forms a minute hole 74 penetrating the natural oxide layer (insulating layer B) 721. do. The heat of the melting region 8 is also dissipated from the hole 74 to increase the cooling rate, and the influence of the heat can be limited to a very small region around the melting region 8.
 他方、穴74を形成しない溶接用レーザ41を用いる場合、溶融領域8が大きくなるとともに熱の影響が及ぶ範囲も大きくなる。 On the other hand, when the welding laser 41 that does not form the hole 74 is used, the melting region 8 becomes large and the range affected by heat also becomes large.
 比較実験に相当する図3は、穴74を形成しない溶接用レーザ41を用いてレーザ照射した場合に、照射過程の進行とともに熱の影響が及ぶ範囲の説明図である。図3(A)は照射直後の状態図であり、図3(B)は溶融領域8が自然酸化層(絶縁層B)721に及んでいない状態図であり、図3(C)は溶融領域8が自然酸化層(絶縁層B)721を越えた状態図である。 FIG. 3, which corresponds to a comparative experiment, is an explanatory diagram of a range in which heat is affected as the irradiation process progresses when laser irradiation is performed using a welding laser 41 that does not form a hole 74. FIG. 3A is a state diagram immediately after irradiation, FIG. 3B is a state diagram in which the molten region 8 does not extend to the natural oxide layer (insulating layer B) 721, and FIG. 3C is a molten region. 8 is a phase diagram in which 8 exceeds the natural oxide layer (insulation layer B) 721.
 図3(A)のように、照射直後の溶融領域8は小さいものであるが、穴74を形成しない溶接用レーザ41の照射領域から熱伝導により熱が拡散する。照射を続けると、徐々に図3(B)のように溶融領域8が広がって行く。さらに照射を続けると、熱伝導は続き、次第に溶融領域8は拡大し、図3(C)のように穴74を形成しない溶接用レーザ41の照射領域より大きな溶融領域8ができ、自然酸化層(絶縁層B)721を溶かす。溶融領域8の温度は金属の融点に達し非常に高温であり、溶融領域8の周囲は熱伝導により熱の影響が及ぶ領域412となる。この際、放熱は、焼成メタルインク導線(第2の導電体C)27の表面からのみであり、溶融領域8の体積が大きくなればなるほど、表面積に比例する放熱は追い付かなくなる。熱の影響が及ぶ領域412は、体積を増した溶融領域8に溜まった高温の金属により大きく広がって行く。 As shown in FIG. 3A, the melting region 8 immediately after irradiation is small, but heat is diffused by heat conduction from the irradiation region of the welding laser 41 that does not form the hole 74. When the irradiation is continued, the molten region 8 gradually expands as shown in FIG. 3 (B). When further irradiation is continued, heat conduction continues, and the molten region 8 gradually expands, forming a molten region 8 larger than the irradiation region of the welding laser 41 that does not form a hole 74 as shown in FIG. 3C, and a natural oxide layer is formed. (Insulation layer B) Melts 721. The temperature of the melting region 8 reaches the melting point of the metal and is extremely high, and the periphery of the melting region 8 is a region 412 affected by heat due to heat conduction. At this time, heat is dissipated only from the surface of the fired metal ink conductor (second conductor C) 27, and the larger the volume of the molten region 8, the more the heat dissipated in proportion to the surface area cannot catch up. The region 412 affected by heat is greatly expanded by the high-temperature metal accumulated in the molten region 8 having an increased volume.
 実施例1では、図2のように溶融領域8の中心に穴74を開けるようにしたため、溶融領域8の金属は素早く冷める。
 このように穴74を形成する溶融用レーザ4を用いた方が、穴74を形成しない溶接用レーザ41を用いるよりも、熱の影響が及ぶ領域412を著しく小さくすることができる。
In the first embodiment, since the hole 74 is formed in the center of the molten region 8 as shown in FIG. 2, the metal in the molten region 8 is cooled quickly.
Using the melting laser 4 that forms the hole 74 in this way can significantly reduce the area 412 affected by heat as compared to using the welding laser 41 that does not form the hole 74.
 以下、本発明の実験例を説明する。
(実験1:電気抵抗とパルスエネルギーの関係を示す実験)
 実験1は溶融領域8の深さを変えることにより、自然酸化層(絶縁層B)721が破壊される前後で電気抵抗がどのように変化するかを調べる実験である。実験1では、溶接レーザ4の照射用の試料として、基板上7の金属導線72上にメタルインク2を塗布し、焼成して、焼成メタルインク導線27を形成したものを、用意した。その後、条件を変えて試料に溶融用レーザ4を照射した。溶融用レーザ4で形成される溶融領域8の深さを変えるために、溶融用レーザ4のパルスエネルギーを100、200、250、300μJの4条件で変えている。また、パルスエネルギー以外の条件は同一で条件としている。
Hereinafter, experimental examples of the present invention will be described.
(Experiment 1: Experiment showing the relationship between electrical resistance and pulse energy)
Experiment 1 is an experiment to investigate how the electric resistance changes before and after the natural oxide layer (insulating layer B) 721 is destroyed by changing the depth of the molten region 8. In Experiment 1, as a sample for irradiation of the welding laser 4, a sample in which the metal ink 2 was applied onto the metal lead wire 72 on the substrate 7 and fired to form the fired metal ink lead wire 27 was prepared. Then, the sample was irradiated with the melting laser 4 under different conditions. In order to change the depth of the melting region 8 formed by the melting laser 4, the pulse energy of the melting laser 4 is changed under four conditions of 100, 200, 250, and 300 μJ. In addition, the conditions other than the pulse energy are the same.
 実験1の条件を述べておく。
(1)溶融用レーザ4
   波長        532nm
   パルス幅      10ns
   パルス回数     1回
   溶融加工設定サイズ 1μm×1μm
   パルスエネルギー  100、200、250、300μJで実験(図4参照)
(2)金属導線(第1の導電体A)72
    金属の種類    アルミニウム
    配線幅・5μm
(3)焼成メタルインク導線(第2の導電体C)27
    金属の種類     銀(ナノ粒子)
    配線の厚さ     0.4μm
 以上の実験条件で、溶融用レーザ4のパルスエネルギーを変えたサンプルを作成し、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27間の電気抵抗を測定した。その結果が、図4である。
The conditions of Experiment 1 will be described.
(1) Laser for melting 4
Wavelength 532nm
Pulse width 10ns
Number of pulses 1 time Melting processing set size 1 μm x 1 μm
Experiment with pulse energy of 100, 200, 250, 300 μJ (see Fig. 4)
(2) Metal conductor (first conductor A) 72
Metal type Aluminum wiring width ・ 5 μm
(3) Fired metal ink conductor (second conductor C) 27
Metal type Silver (nanoparticles)
Wiring thickness 0.4 μm
Under the above experimental conditions, a sample in which the pulse energy of the melting laser 4 was changed was prepared, and the electric resistance between the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27 was prepared. Was measured. The result is shown in FIG.
 パルスエネルギー100μJでは、電気抵抗が平均で340Ωあり溶融用レーザ4の照射前と比較して導電性の向上はなかった。溶融用レーザ4の影響は、図2(C)(a)のように焼成メタルインク導線(第2の導電体C)27の範囲にとどまっていると推測される。 At a pulse energy of 100 μJ, the electrical resistance was 340 Ω on average, and there was no improvement in conductivity compared to before irradiation with the melting laser 4. It is presumed that the influence of the melting laser 4 is limited to the range of the fired metal ink lead wire (second conductor C) 27 as shown in FIGS. 2C and 2A.
 パルスエネルギー200μJでは、電気抵抗が平均で50Ωあり著しく導電性の向上が観察された。溶融用レーザ4の影響は、図2(C)(b)のように、自然酸化層(絶縁層B)721付近でとどまっているものと推測される。 At a pulse energy of 200 μJ, the electrical resistance was 50 Ω on average, and a significant improvement in conductivity was observed. It is presumed that the influence of the melting laser 4 remains in the vicinity of the natural oxide layer (insulating layer B) 721 as shown in FIGS. 2 (C) and 2 (b).
 パルスエネルギー250μJと300μJでは、電気抵抗の平均が0Ω近くまで激減している。自然酸化層(絶縁層B)721は、溶融されていると推測され、溶融用レーザ4の影響は、図2(C)(c)のように金属導線(第1の導電体A)72に及んでいると推測される。そして、パルスエネルギー200μJではエラーバー(3σ)が片側30Ω、両側60Ω程度残っており、観察される電気抵抗に大きなばらつきが存在したが、パルスエネルギー250μJと300μJでは、エラーバー(3σ)が2~3Ωとなっている。 At pulse energies of 250 μJ and 300 μJ, the average electrical resistance dropped sharply to near 0Ω. It is presumed that the natural oxide layer (insulating layer B) 721 is melted, and the influence of the melting laser 4 is exerted on the metal conductor (first conductor A) 72 as shown in FIGS. 2 (C) and 2 (c). It is presumed that it has reached. At the pulse energy of 200 μJ, the error bar (3σ) remained about 30 Ω on one side and about 60 Ω on both sides, and there was a large variation in the observed electrical resistance. However, at the pulse energies of 250 μJ and 300 μJ, the error bar (3σ) was 2 to 2. It is 3Ω.
 これは、確実に導電性を確保できるところまで溶融用レーザ4の影響が及んでいることを示している。そして電気抵抗が充分小さく、導電部9が、ばらつきが少なく安定して形成されていることを示している。 This indicates that the influence of the melting laser 4 has reached the point where the conductivity can be surely secured. The electrical resistance is sufficiently small, indicating that the conductive portion 9 is stably formed with little variation.
(実験2:溶融領域の確認)
 溶融領域8の存在を確認すべく、導電部9の走査電子顕微鏡撮影を行う実験2を行った。
 図5は導電部9の走査電子顕微鏡写真であり、図5(A)は導電部9の走査電子顕微鏡写真、そして、図5(B)は図5(A)の走査電子顕微鏡写真の説明図である。
(Experiment 2: Confirmation of molten region)
In order to confirm the existence of the molten region 8, an experiment 2 was conducted in which a scanning electron microscope image of the conductive portion 9 was taken.
5A and 5B are scanning electron micrographs of the conductive portion 9, FIG. 5A is an explanatory view of the scanning electron micrograph of the conductive portion 9, and FIG. 5B is an explanatory diagram of the scanning electron micrograph of FIG. 5A. Is.
 撮影試料を次のように調製し撮影した。
(1)上述のように作られた導電部9を有する基板7を試料とし、次の電子線ビーム切断を行うための前処理として保護膜73で被覆した。
(2)電子線ビームで、基板7ごと切断し、断面を切り出した。
(3)以上のように調製した試料を、断面が分かるような角度から走査電子顕微鏡で撮影した。
The imaging sample was prepared as follows and photographed.
(1) The substrate 7 having the conductive portion 9 made as described above was used as a sample, and was coated with a protective film 73 as a pretreatment for performing the next electron beam cutting.
(2) The entire substrate 7 was cut with an electron beam, and a cross section was cut out.
(3) The sample prepared as described above was photographed with a scanning electron microscope from an angle at which the cross section can be seen.
 図5(B)のハッチングを施した保護膜73は、試料の調製時に被覆されたものであり、本来の導電部9には存在しないものである。
 金属導線(第1の導電体A)72の表面には、自然酸化層(絶縁層B)721があるが、数ナノメートルの厚さであり、この倍率では写っていない。
The hatched protective film 73 of FIG. 5B is coated at the time of sample preparation and does not exist in the original conductive portion 9.
There is a natural oxide layer (insulating layer B) 721 on the surface of the metal conductor (first conductor A) 72, but it is several nanometers thick and is not shown at this magnification.
 溶融用レーザ4が照射された領域には、穴74が形成されている。穴74の側方には、本来存在すべき焼成メタルインク導線(第2の導電体C)27と金属導線(第1の導電体A)72との境界がぼやけるか完全に消失している。このことから、自然酸化層(絶縁層B)721を含め金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27が溶融し、溶融領域8となっていることが分かる。 A hole 74 is formed in the region irradiated with the melting laser 4. On the side of the hole 74, the boundary between the calcined metal ink conductor (second conductor C) 27 and the metal conductor (first conductor A) 72, which should originally exist, is blurred or completely disappeared. From this, the metal conductor (first conductor A) 72 including the natural oxide layer (insulation layer B) 721 and the fired metal ink conductor (second conductor C) 27 are melted to form a melted region 8. You can see that there is.
(実験1と実験2のまとめ)
 以上の実験から、溶融用レーザ4の照射により、自然酸化層(絶縁層B)721を含め金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27が溶融し溶融領域8が形成されることが確認された。そして、溶融用レーザ4の照射により、金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27間の電気抵抗が著しく低下し、電気抵抗値にばらつきの少ない結果が得られることが確認された。本発明は、電気抵抗値にばらつきが少ないことから、実用に供し得るものといえる。
(Summary of Experiment 1 and Experiment 2)
From the above experiments, by irradiating the melting laser 4, the metal conductor (first conductor A) 72 including the natural oxide layer (insulating layer B) 721 and the fired metal ink conductor (second conductor C) 27 are formed. It was confirmed that the molten region 8 was formed by melting. Then, due to the irradiation of the melting laser 4, the electric resistance between the metal conductor (first conductor A) 72 and the fired metal ink conductor (second conductor C) 27 is remarkably reduced, and the electric resistance value varies. It was confirmed that less results were obtained. It can be said that the present invention can be put into practical use because the electric resistance value has little variation.
(実施例2)
 実施例2は、本発明の応用例である。図6は実施例2の説明図であり、図6(A)はTFT液晶パネルの基板7の平面図、図6(B)は図6(A)中に設けられた迂回回路の拡大図である。
(Example 2)
Example 2 is an application example of the present invention. 6A and 6B are explanatory views of the second embodiment, FIG. 6A is a plan view of a substrate 7 of a TFT liquid crystal panel, and FIG. 6B is an enlarged view of a detour circuit provided in FIG. 6A. be.
 LCD(液晶ディスプレイ)のTFT液晶パネルの基板7は、電界効果型トランジスタ12が実装されており、アルミニウムを主成分とする金属導線(第1の導電体A)72が配線されている。その配線の一つに欠陥(断線)722があり、通例なら不良品として廃棄されてしまう。 A field effect transistor 12 is mounted on a substrate 7 of a TFT liquid crystal panel of an LCD (liquid crystal display), and a metal conducting wire (first conductor A) 72 containing aluminum as a main component is wired. One of the wirings has a defect (disconnection) 722, which is usually discarded as a defective product.
 欠陥(断線)722の存在する基板7は、焼成メタルインク導線(第2の導電体C)27で作成した迂回回路76で修復され、これにより製品歩留まりが良くなる。 The substrate 7 having the defect (disconnection) 722 is repaired by the detour circuit 76 created by the fired metal ink conductor wire (second conductor C) 27, whereby the product yield is improved.
 欠陥(断線)722が生じた原因は色々とあり得るが、主な原因はゴミの付着である。欠陥(断線)722を直接、直線的に最短距離で繋ぐこともできるが、ゴミ等が残っている可能性があるため、あえて迂回回路76としている。もちろん、欠陥(断線)722を直接、直線的に最短距離で繋いで修復してもよい。 There are various possible causes for the defect (disconnection) 722, but the main cause is the adhesion of dust. It is possible to connect the defect (disconnection) 722 directly and linearly at the shortest distance, but since there is a possibility that dust or the like may remain, the detour circuit 76 is intentionally used. Of course, the defect (disconnection) 722 may be directly and linearly connected at the shortest distance for repair.
 銀のメタルインク2を用いた迂回回路76は、図示していない焼成用レーザ3で焼成され焼成メタルインク導線(第2の導電体C)27となっている。
 これにより、導電部9の部分では、基板7、金属導線(第1の導電体A)72、自然酸化層(絶縁層B)721、焼成メタルインク導線(第2の導電体C)27の順に下から積層される構造となる。
The detour circuit 76 using the silver metal ink 2 is fired by a firing laser 3 (not shown) to form a fired metal ink conductor wire (second conductor C) 27.
As a result, in the conductive portion 9, the substrate 7, the metal conductor (first conductor A) 72, the natural oxide layer (insulation layer B) 721, and the fired metal ink conductor (second conductor C) 27 are in this order. The structure is laminated from below.
 溶融用レーザ4は、各導電部9に対して3か所、それぞれパルスエネルギーの強度を変えて照射される。(図2(C)参照) The melting laser 4 is irradiated to each conductive portion 9 at three locations with different pulse energy intensities. (See Fig. 2 (C))
 導電部9は、3か所の穴74の周囲に形成された溶融領域8に形成される。パルスエネルギーの強度を変えた3か所の溶融領域8のいずれか一つでも自然酸化層(絶縁層B)721まで届けば金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27間の電気抵抗が、TFT液晶パネルの作動に影響しない程度に低減する。
 また、溶融領域8の中心に溶融領域8で周囲を囲まれた穴74が形成されるため、溶融領域8で溶融した金属は、穴74から熱を放出して素早く冷却され、溶融領域8の周辺に熱の影響を与えることが低減される。
The conductive portion 9 is formed in the molten region 8 formed around the three holes 74. If any one of the three molten regions 8 in which the intensity of the pulse energy is changed reaches the natural oxide layer (insulating layer B) 721, the metal conductor (first conductor A) 72 and the fired metal ink conductor (first) The electrical resistance between the conductors C) 27 of 2 is reduced to the extent that it does not affect the operation of the TFT liquid crystal panel.
Further, since the hole 74 surrounded by the melting region 8 is formed in the center of the melting region 8, the metal melted in the melting region 8 releases heat from the hole 74 and is quickly cooled, so that the metal in the melting region 8 is cooled quickly. The influence of heat on the surroundings is reduced.
 本発明は、実施例2のようにTFT液晶パネルの基板(電子部品)を製造方法に使用することができる。
 さらに、本発明は、自然酸化層(絶縁層B)721を含め金属導線(第1の導電体A)72と焼成メタルインク導線(第2の導電体C)27が溶融した溶融領域8が設けられた導電部9を有するTFT液晶パネルの基板(電子部品)を提供できる。
In the present invention, the substrate (electronic component) of the TFT liquid crystal panel can be used in the manufacturing method as in the second embodiment.
Further, the present invention provides a molten region 8 in which the metal conductor (first conductor A) 72 including the natural oxide layer (insulation layer B) 721 and the fired metal ink conductor (second conductor C) 27 are melted. It is possible to provide a substrate (electronic component) of a TFT liquid crystal panel having the obtained conductive portion 9.
 さらに、前述のように提供されたTFT液晶パネルの基板(電子部品)を他の部品と組み立ててTFT液晶パネルという製品の製造方法としても使える。
 さらに、前述のように提供されたTFT液晶パネル(電子部品)を他の部品と組み立てて液晶ディスプレイという製品も提供できる。
 なお、TFT液晶パネルおよび液晶ディスプレイ技術の詳細と製造方法は、広く知られているので、ここでは説明しない。
Further, it can be used as a method for manufacturing a product called a TFT liquid crystal panel by assembling the substrate (electronic component) of the TFT liquid crystal panel provided as described above with other parts.
Further, it is possible to provide a product called a liquid crystal display by assembling the TFT liquid crystal panel (electronic component) provided as described above with other components.
Since the details and manufacturing method of the TFT liquid crystal panel and the liquid crystal display technique are widely known, they will not be described here.
(実施例3)
 図7は、実施例3の導電部9の断面図である。
 実施例1および実施例2は、自然酸化層721を絶縁層Bとした例であった。実施例3は金属導線(第1の導電体A)の表面に人為的に絶縁層Bを作る態様である。また、第2の導電体Cは焼成メタルインク導線でなくてもよい。さらに、第1の導電体Aと第2の導電体Cは同じ金属素材を用いてもよい。
(Example 3)
FIG. 7 is a cross-sectional view of the conductive portion 9 of the third embodiment.
Examples 1 and 2 were examples in which the natural oxide layer 721 was used as the insulating layer B. Example 3 is an embodiment in which an insulating layer B is artificially formed on the surface of a metal conductor (first conductor A). Further, the second conductor C does not have to be a fired metal ink lead wire. Further, the same metal material may be used for the first conductor A and the second conductor C.
 例の一つとして、積層回路基板5の例を示す。積層回路基板5には、第1の導電体A、絶縁層B、第2の導電体C、絶縁層B、第1の導電体A、絶縁層B、第2の導電体Cのように、絶縁層Bを挟んで多数の導電体が積層されている。 As one of the examples, an example of the laminated circuit board 5 is shown. The laminated circuit board 5 has a first conductor A, an insulating layer B, a second conductor C, an insulating layer B, a first conductor A, an insulating layer B, and a second conductor C. A large number of conductors are laminated with the insulating layer B interposed therebetween.
 この積層した導電体に対して、溶融用レーザ4を照射することで、導電部9が、第1の導電体Aと第2の導電体Cと絶縁層Bを溶融した溶融領域8に形成される。溶融領域8が導電部9となり、積層した導電体すべてを導通させることができる。 By irradiating the laminated conductor with the melting laser 4, the conductive portion 9 is formed in the melting region 8 in which the first conductor A, the second conductor C, and the insulating layer B are melted. To. The melting region 8 becomes the conductive portion 9, and all the laminated conductors can be made conductive.
 以上、本発明に係る実施例1から実施例3を、図面を参照して詳述してきたが、具体的な構成は、これらの実施の形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計の変更等があっても本発明に含まれる。
 また、前述の各実施例は、その目的および構成等に特に矛盾や問題がない限り、互いの技術を流用して組み合わせることが可能である。
Although Examples 1 to 3 according to the present invention have been described in detail with reference to the drawings, the specific configuration is not limited to these embodiments and deviates from the gist of the present invention. It is included in the present invention even if there is a design change to the extent that it does not occur.
Further, each of the above-mentioned embodiments can be combined by diverting the techniques of each other as long as there is no particular contradiction or problem in the purpose and configuration thereof.
A    第1の導電体
B    絶縁層
C    第2の導電体
2    メタルインク
24   金属ナノ粒子
25   有機物
26   有機溶媒
27   焼成メタルインク導線(第2の導電体)
3    焼成用レーザ
4    溶融用レーザ
41   溶接用レーザ
412  熱の影響が及ぶ領域
5    積層回路基板
7    基板
72   金属導線(第1の導電体)
721  自然酸化層(絶縁層)
722  欠陥(断線)
73   保護膜
74   穴
75   電界効果型トランジスタ
76   迂回回路
8    溶融領域
9    導電部
A First conductor B Insulation layer C Second conductor 2 Metal ink 24 Metal nanoparticles 25 Organic matter 26 Organic solvent 27 Calcined metal ink conductor (second conductor)
3 Laser for firing 4 Laser for melting 41 Laser for welding 412 Area affected by heat 5 Laminated circuit board 7 Board 72 Metal conductor (first conductor)
721 Natural oxide layer (insulation layer)
722 Defect (disconnection)
73 Protective film 74 Hole 75 Field effect transistor 76 Detour circuit 8 Melting region 9 Conductive part

Claims (10)

  1.  絶縁層を表面に有する第1の導電体の上に、第2の導電体を積層する第1工程と、
     前記絶縁層を含め前記第1の導電体と前記第2の導電体を溶融し溶融領域を作ると共に、前記溶融領域の中心に前記溶融領域で周囲を囲まれた穴を形成する第2工程を含む、導電部の製造方法。
    The first step of laminating the second conductor on the first conductor having an insulating layer on the surface, and
    A second step of melting the first conductor and the second conductor including the insulating layer to form a molten region and forming a hole surrounded by the molten region in the center of the molten region. A method for manufacturing a conductive part, including.
  2.  前記第2工程に続いて、
     前記第2工程で形成された前記溶融領域と異なる位置に、前記溶融領域の深さが異なる別の溶融領域を作る第3工程を含む、請求項1記載の導電部の製造方法。
    Following the second step,
    The method for manufacturing a conductive portion according to claim 1, further comprising a third step of forming another melting region having a different depth of the melting region at a position different from the melting region formed in the second step.
  3.  前記絶縁層が、前記第1の導電体の金属が酸化された自然酸化層であり、
     前記第2の導電体が、メタルインクを焼成した焼成メタルインク導線である請求項1または2のいずれか1項に記載の導電部の製造方法。
    The insulating layer is a natural oxide layer obtained by oxidizing the metal of the first conductor.
    The method for manufacturing a conductive portion according to any one of claims 1 or 2, wherein the second conductor is a fired metal ink conducting wire obtained by firing metal ink.
  4.  前記第1の導電体は、基板上に配置され、請求項1~3のいずれか1項に記載の導電部を前記基板上で作成することを特徴とする電子部品の製造方法。
    A method for manufacturing an electronic component, wherein the first conductor is arranged on a substrate, and the conductive portion according to any one of claims 1 to 3 is formed on the substrate.
  5.  請求項4の電子部品を他の電子部品と組み立てて製品を作る、製品の製造方法。
     
    A method for manufacturing a product, wherein the electronic component according to claim 4 is assembled with another electronic component to make a product.
  6.  第1の導電体と第2の導電体と溶融領域を備え、
     第1の導電体は、表面に絶縁層を有し、
     前記第2の導電体は、前記第1の導電体に積層されており、
     前記溶融領域は、前記絶縁層を含め前記第1の導電体と前記第2の導電体が溶融した領域であり、前記溶融領域の中心に前記溶融領域で周囲を囲まれた穴を有している
    ことを特徴とする導電部。
    With a first conductor, a second conductor and a melting region,
    The first conductor has an insulating layer on its surface and has an insulating layer.
    The second conductor is laminated on the first conductor.
    The melted region is a region where the first conductor and the second conductor, including the insulating layer, are melted, and has a hole surrounded by the melted region in the center of the melted region. Conductive part characterized by being present.
  7.  前記溶融領域は2箇所以上設けられ、前記溶融領域の深さが、それぞれ異なっていることを特徴とする請求項6記載の導電部。

    The conductive portion according to claim 6, wherein the melting region is provided at two or more locations, and the depths of the melting regions are different from each other.

  8.   前記絶縁層が、前記第1の導電体の金属に由来する自然酸化層であり、
     前記第2の導電体が、メタルインクを焼成した焼成メタルインク導線である請求項6または7のいずれか1項に記載の導電部。
    The insulating layer is a natural oxide layer derived from the metal of the first conductor.
    The conductive portion according to any one of claims 6 or 7, wherein the second conductor is a fired metal ink conducting wire obtained by firing metal ink.
  9.  前記第1の導電体は、基板上に配置され、請求項6~7のいずれか1項に記載の導電部を有する電子部品。
    The first conductor is an electronic component that is arranged on a substrate and has a conductive portion according to any one of claims 6 to 7.
  10.  請求項9記載の電子部品を組み込んだ製品。 A product incorporating the electronic components according to claim 9.
PCT/JP2021/033122 2020-12-01 2021-09-09 Production method for conductive part, production method for electronic component including conductive part, production method for product made from electronic component including conductive part, conductive part, electronic component including conductive part, and product incorporating electronic component including conductive part WO2022118517A1 (en)

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JPH0196954A (en) * 1987-10-08 1989-04-14 Mitsubishi Electric Corp Resistance-trimming method for semiconductor integrated circuit
JPH06314745A (en) * 1993-04-28 1994-11-08 Matsushita Electric Ind Co Ltd Processing method of metal film
JP2000022306A (en) * 1998-06-30 2000-01-21 Kyocera Corp Method of repairing aluminum thin film wiring
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Publication number Priority date Publication date Assignee Title
JPS63183481A (en) * 1987-01-27 1988-07-28 三菱電機株式会社 Circuit board and repairs thereof
JPH0196954A (en) * 1987-10-08 1989-04-14 Mitsubishi Electric Corp Resistance-trimming method for semiconductor integrated circuit
JPH06314745A (en) * 1993-04-28 1994-11-08 Matsushita Electric Ind Co Ltd Processing method of metal film
JP2000022306A (en) * 1998-06-30 2000-01-21 Kyocera Corp Method of repairing aluminum thin film wiring
JP2005354009A (en) * 2004-06-14 2005-12-22 V Technology Co Ltd Conductive-material-contained liquid for repairing wiring on electronic circuit substrate, and method of repairing wiring on electronic circuit substrate

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