WO2022089737A1 - Deposition source, deposition apparatus for depositing evaporated material, and methods therefor - Google Patents

Deposition source, deposition apparatus for depositing evaporated material, and methods therefor Download PDF

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Publication number
WO2022089737A1
WO2022089737A1 PCT/EP2020/080294 EP2020080294W WO2022089737A1 WO 2022089737 A1 WO2022089737 A1 WO 2022089737A1 EP 2020080294 W EP2020080294 W EP 2020080294W WO 2022089737 A1 WO2022089737 A1 WO 2022089737A1
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WO
WIPO (PCT)
Prior art keywords
substrate
nozzles
deposition
nozzle
zone
Prior art date
Application number
PCT/EP2020/080294
Other languages
French (fr)
Inventor
Frank Schnappenberger
Thomas Deppisch
Susanne Wolff
Wolfgang Buschbeck
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2020/080294 priority Critical patent/WO2022089737A1/en
Priority to EP20820783.7A priority patent/EP4237593A1/en
Priority to CN202080106890.8A priority patent/CN116635566A/en
Publication of WO2022089737A1 publication Critical patent/WO2022089737A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • Embodiments of the present disclosure relate to evaporation sources, particularly evaporation sources for metal or metal alloys, and deposition apparatuses for depositing one or more layers on a substrate, particularly a flexible substrate.
  • embodiments of the present disclosure relate to apparatuses for coating a substrate with one or more layers, e.g. for thin-film solar cell production, flexible display production or thin-film battery production.
  • embodiments of the present disclosure relate to apparatuses and methods for coating a flexible substrate in a roll-to-roll (R2R) process.
  • embodiments of the present disclosure relate to a deposition apparatus having an evaporation source having improved layer uniformity and improved deposition efficiency.
  • embodiments of the present disclosure relate to methods of operating an evaporation source and of operating a deposition apparatus having an evaporation source.
  • Depositing thin layers on a flexible substrate is a production process for many applications.
  • the flexible substrates are coated in one or more chambers of a flexible substrate coating apparatus.
  • the flexible substrates such as foils made of plastics or precoated papers, are guided on rolls or drums and pass in this way the source of deposition material.
  • Possible applications of the coated substrate range from providing coated foils for the packaging industry to depositing thin films for flexible electronics and advanced technology applications, such as smartphones, flat screen TVs and solar panels.
  • Different deposition processes may be used to achieve a layer with the desired properties.
  • evaporated material is deposited onto a substrate, e.g. a flexible substrate, for providing a coating on the substrate.
  • the properties and the functionality of the coating inter alia, depend on the coating thickness. Accordingly, there is a demand to control the coating thickness to be within a predetermined range. For instance, the coating thickness can be adjusted by adjusting a deposition rate of the material to be deposited on the substrate.
  • a deposition source for depositing a layer of evaporated material on a substrate.
  • the deposition source includes a crucible for providing evaporated material, a first nozzle zone extending in a first direction and having a first plurality of nozzles in communication with the crucible, and a second nozzle zone extending in the first direction from an end of the first nozzle zone, the second nozzle zone having a second plurality of nozzles in communication with the crucible, wherein each neighbouring nozzle of the second plurality of nozzles is tilted in a direction towards the first nozzle zone.
  • a deposition apparatus for depositing evaporated material on a substrate.
  • the deposition apparatus includes a vacuum chamber, a deposition source according to aspects of the present disclosure, and a substrate transport for transporting the substrate past the deposition source.
  • a deposition apparatus for depositing evaporated material on a substrate.
  • the deposition apparatus includes a vacuum chamber, a deposition source according to aspects of the present disclosure, and a source transport for transporting the deposition source past the substrate.
  • a method for depositing a layer of evaporated material on a substrate includes depositing evaporated material onto the substrate from a first deposition zone extending in a first direction, and depositing evaporated material onto the substrate from a second deposition zone extending in the first direction from the end of the first deposition zone, wherein the evaporated material is deposited from the second deposition zone in a plurality of directions, each direction being tilted towards the first deposition zone.
  • Embodiments of the present disclosure allow for improved coating uniformity at an edge of a substrate and improved coating efficiency.
  • FIG. 1 shows a nozzle arrangement of a deposition source and a plot of thickness of a layer deposited on an edge portion of a substrate using the deposition source according to embodiments of the present disclosure
  • FIG. 2 shows a perspective view of a deposition source according to embodiments of the present disclosure
  • FIG. 3 shows a cross-sectional view of a deposition source according to embodiments of the present disclosure.
  • FIG. 4 shows a schematic side view of a deposition apparatus according to embodiments of the present disclosure.
  • FIG. 1 shows an arrangement of nozzles 101, 102 of a deposition source 100 across a dimension of a substrate S. Particularly, an arrangement of nozzles across half of a width of substrate S starting from a centerline of the width of substrate S and extending towards an outer edge of substrate S is shown.
  • a half of a deposition source 100 is shown extending from the centerline of the substrate S on the left to an outer edge of the substrate S, and it can be expected that the deposition source 100 also extends from the centerline of the substrate S to the opposite outer edge of the substrate S.
  • the arrangement of nozzles 101, 102 of deposition source 100 is mirrored about the centerline of substrate S.
  • Nozzles 101, 102 are arranged in a first direction, wherein the first direction extends in a direction parallel to the surface of substrate S. Particularly, the first direction extends in the width direction of substrate S, i.e. in the left-to-right direction of the figures.
  • a substrate S having a total width of 1200 mm is provided, extending from the centerline of the substrate S at 0 mm to an outer edge at +600 mm.
  • Deposition source 100 is provided with a plurality of nozzles 101, 102 arranged in the first direction for depositing a layer of evaporated material onto substrate S.
  • a shield 210 is further provided behind substrate S relative to deposition source 100.
  • FIG. 1 An exemplary plot of the thickness of the resulting layer deposited on substrate S along the width of the substrate S is further shown in FIG. 1.
  • a nominal layer thickness of 1.0 is the target thickness of the layer to be deposited.
  • a first plurality of nozzles 101 is provided in a first nozzle zone 110.
  • first nozzle zone 110 extends across the width of the substrate S, and the first plurality of nozzles 101 is evenly distributed in the first direction such that evaporated material is deposited in a direction normal to the surface of substrate S.
  • the resulting thickness T 2 of the layer deposited on substrate S by the deposition source of the present state of the art is non-uniform. Particularly, the thickness T 2 of the layer is diminished in the region near the edge of substrate S.
  • other deposition sources according to the present state the art may provide additional nozzles 101, such that the first nozzle zone 110 extends past the outer edge of substrate S, or may provide nozzles 101 with a larger diameter in the region of the outer edge of substrate S, resulting in a layer thickness T 3 .
  • problems arise with such solutions as the amount of material which is deposited on shield 210, and not on substrate S, is increased due to the increased width of deposition, leading to increased material waste and compromised deposition efficiency of the deposition source 100.
  • a deposition source 100 for depositing a layer of evaporated material on a substrate S includes a second nozzle zone 120 provided on an outside area of the first nozzle zone 110, wherein each of the nozzles 102 in the second nozzle zone 120 are tilted inwards towards the first nozzle zone 110.
  • the deposition source 100 includes a second nozzle zone 120 provided on an outside area of the first nozzle zone 110, wherein each of the nozzles 102 in the second nozzle zone 120 are tilted inwards towards the first nozzle zone 110.
  • any reference to a “direction” or an “orientation” of a nozzle refers to the direction of the principal axis of the nozzle, that is, the principal axis of the spray cone of material emitted by said nozzle.
  • a nozzle being “directed at” or “oriented to” a certain point refers to the principal axis of the nozzle being oriented so as to be directed to said point.
  • the deposition source 100 includes nozzles 101 in the first nozzle zone 110 and nozzles 102 in the second nozzle zone 120, wherein all nozzles 101, 102 are the same diameter and have the same spray cone angle, and the nozzles 102 in the second nozzle zone 120 are directed towards the outer edge of substrate S.
  • the resulting thickness T 3 in the region near the outer edge of substrate S can be increased, while the overall width of the deposition area remains relatively narrow. As a result, the thickness in the region near the outer edge of substrate S may be improved without resulting in increased deposition of material on shield 210.
  • the nozzles 101, 102, particularly the nozzles 102 in the second nozzle zone 120 may be further tuned, e.g. nozzle direction, nozzle diameter or spray cone angle, so as to result in a uniform thickness across the entire width of the substrate S without increasing the width of the deposition area.
  • the deposition source 100 includes a crucible 104 for providing evaporated material, a first nozzle zone 110 extending in a first direction and having a first plurality of nozzles 101 in communication with the crucible 104, and a second nozzle zone 120 extending in the first direction and from an end of the first nozzle zone 110, the second nozzle zone 120 having a second plurality of nozzles 102 in communication with the crucible 104.
  • Each neighbouring nozzle of the second plurality of nozzles 102 is tilted in a direction towards the first nozzle zone 110.
  • FIGS. 2 and 3 only an end portion of deposition source 100 is shown in FIGS. 2 and 3, i.e.
  • the deposition source 100 may have a second end which is a mirror of the first end shown in the figures, having another second plurality of nozzles 102 in the region near the opposite edge of the substrate S.
  • the amount of evaporated material which can be deposited in the region of the outer edge of the substrate S can be increased, without making the width of the deposition area excessive such that less waste material is deposited e.g. on a shield 210. It follows that the uniformity of the deposited layer can be improved without compromising deposition efficiency of the deposition source.
  • the deposition source 100 may include a manifold 103, a crucible 104 for holding an amount of source material M and having at least one heater, and a connecting pipe 105 therebetween.
  • Nozzles 101, 102 may be arranged on manifold 103 such that each nozzle 101, 102 is in communication with crucible 104.
  • the components of the deposition source 100 combine to form what may be referred to as an evaporator, i.e. a deposition source for evaporating a source material.
  • an “deposition source for evaporating a source material” can be understood as an evaporator configured for evaporating a source material by heating the source material employing a heater.
  • the “source material” may be a material having an evaporation temperature of about 100°C to about 600°C.
  • the “source material” can be an organic material, for instance for organic light emitting diode (OLED) production.
  • a “crucible” can be understood as a device having a reservoir for the material to be evaporated by heating the crucible.
  • a “crucible” can be understood as a source material reservoir which can be heated to vapourise the source material M into a gas by at least one of evaporation and sublimation of the source material.
  • the reservoir can have an inner volume for receiving the source material M to be evaporated.
  • the inner volume of the crucible can be between 100 cm 3 and 3000 cm 3 , particularly between 700 cm 3 and 1700 cm 3 , more particularly 1200 cm 3 .
  • a “heater for heating the source material” can be understood as a heating unit or heating device configured to heat the source material M, particularly to vapourise the source material M into a gaseous source material, otherwise referred to as “evaporated material”.
  • the source material M provided in the inner volume of the crucible 104 is heated up to a temperature at which the source material M evaporates.
  • the material to be evaporated can be in the form of a powder.
  • the source material M in crucible 104 is heated and vapourised, and the evaporated material then flows from crucible 104, through connecting pipe 105 and into manifold 103 to be distributed to each of the nozzles 101, 102.
  • each nozzle of the second plurality of nozzles 102 is tilted at an angle which increases with increasing distance from the first nozzle zone 110.
  • second nozzle zone 120 is provided with four nozzles 102.
  • the first nozzle 102 which is closest to the first nozzle zone 110 is tilted at a small angle
  • the second nozzle 102 is tilted slightly more than the first nozzle 102
  • the third nozzle 102 is tilted slightly more again
  • the last nozzle 102 which is farthest from the first nozzle zone 110 has the highest angle of tilt.
  • the second plurality of nozzles 102 may be directed at a common point P which lies on the surface of the substrate S.
  • the common point P lies on the edge of the substrate S, however the present disclosure is not limited thereto.
  • the common point P may lie within 50 mm of the edge of the substrate S, more particularly within 10 mm of the edge of the substrate S.
  • the position of the common point P may be adjusted so as to minimise the amount of overlap of the deposition area over shield 210, in order to reduce wasted material and improve the deposition efficiency.
  • the first nozzle zone 110 is exemplarily shown in the figures as extending across the whole width of the substrate S. However, the present disclosure is not limited thereto, and the first nozzle zone 110 may extend in the first direction across less than the width of the substrate or more than the width of the substrate. Particularly, the first nozzle zone 110 may extend in the first direction across at least 80 % of the width of the substrate, across at least 90 % of the width of the substrate, or across at least 95 % of the width of the substrate. Particularly, the first nozzle zone 110 may extend in the first direction up to the common point P which lies on substrate S.
  • the first plurality of nozzles 101 and the second plurality of nozzles 102 may be arranged along the first direction. Particularly, the first plurality of nozzles 101 and the second plurality of nozzles 102 may be arranged along a common line across the width direction of the substrate S. However, the present disclosure is not limited thereto, and the nozzles 101, 102 may be arranged in alternative arrangements. For example, the first plurality of nozzles 101 and/or the second plurality of nozzles 102 may be arranged in one or more rows of nozzles 101, 102, in a zigzag arrangement of nozzles 101, 102, or with non- uniform distances between nozzles.
  • each of the nozzles of the first plurality of nozzles 101 is oriented in a direction normal to the substrate S.
  • a normal orientation of the first plurality of nozzles 101 allows for the uniformity of the layer of deposited material in the inner region of the substrate, i.e. the region between the outer edge regions of the substrate S, to be maintained.
  • the present disclosure is not limited thereto, and one or more nozzles of the first plurality of nozzles 101 may be tilted in a forwards or backwards direction relative to a transport direction of the substrate S.
  • one or more nozzles of the first plurality of nozzles 101 may be tilted in the plane defined by the transport direction of the substrate S and the direction normal to the substrate S. More particularly, one or more nozzles of the first plurality of nozzles may be tilted about an axis corresponding to the first direction.
  • each of the nozzles of the second plurality of nozzles 102 is tilted is towards the first nozzle zone 110.
  • each nozzle of the second plurality of nozzles 102 which are arranged outside of the first nozzle zone 110, are tilted inwards towards the first nozzle zone 110.
  • a plane may be defined by the first direction in which the nozzles 101, 102 extend and a direction normal to the substrate S, wherein each nozzle of the second plurality of nozzles 102 are tilted in said plane.
  • properties of the second plurality of nozzles 102 can be adjusted.
  • the diameter of the respective nozzles can be increased to deposit more material from a specific nozzle, or reduced to deposit less material from a specific nozzle.
  • the first plurality of nozzles 101 may have a first nozzle diameter
  • the second plurality of nozzles 102 may have a second nozzle diameter smaller than the first nozzle diameter. More particularly, the nozzle diameter of each nozzle of the second plurality of nozzles 102 may be progressively reduced based on the distance to the first nozzle zone 110.
  • a first nozzle of the second plurality of nozzles 102 which is closest to the first nozzle zone 110 may have a diameter equal to or slightly smaller than the first nozzle diameter
  • a last nozzle of the second plurality of nozzles 102 which is farthest from the first nozzle zone 110 may have the smallest diameter of the second plurality of nozzles 102.
  • the spray cone angle of the respective nozzles of the second plurality of nozzles 102 may be adjusted to tune the uniformity of the deposited layer in the region near the edge of substrate S.
  • the spray cone angle of the respective nozzles can be increased to deposit material from a specific nozzle in a wider deposition zone, or reduced to deposit material from a specific nozzle in a narrower deposition zone.
  • the first plurality of nozzles 101 may have a first spray cone angle
  • the second plurality of nozzles 102 may have a second spray cone angle smaller than the first spray cone angle.
  • the spray cone angle of each nozzle of the second plurality of nozzles 102 may be progressively reduced based on the distance to the first nozzle zone 110.
  • a first nozzle of the second plurality of nozzles 102 which is closest to the first nozzle zone 110 may have a spray cone angle equal to or slightly smaller than the first nozzle diameter
  • a last nozzle of the second plurality of nozzles 102 which is farthest from the first nozzle zone 110 may have the smallest spray cone angle of the second plurality of nozzles 102.
  • the angle at which each respective nozzle of the second plurality of nozzles 102 is tilted is dependent on the distance D from the nozzles to the surface of the substrate S in a direction normal to the substrate S.
  • the distance D may be defined as the distance in the direction normal to the substrate S from the outlets of the first plurality of nozzles 101 to the deposition surface of substrate S. If the distance D is greater than the width of the second nozzle zone 120, the angles at which the outermost nozzles of the second plurality of nozzles 102 are tilted may become excessive.
  • the second nozzle zone 120 may have a length in the first direction which is smaller than the distance D between the first plurality of nozzles 101 and the substrate S.
  • a deposition apparatus 200 for depositing evaporated material onto a substrate includes a vacuum chamber 201, a deposition source 100 according to aspects and embodiments described herein provided in the vacuum chamber 201, and a substrate transport for transporting the substrate S past the deposition source 100.
  • a dynamic deposition apparatus as the substrate S is moved relative to the vacuum chamber 201 during the deposition process.
  • a dynamic deposition apparatus according to such an embodiment may be used for depositing a layer of evaporated material on a flexible substrate, such as a web or foil, or on a rigid substrate, such as a glass substrate.
  • a “vacuum chamber” is to be understood as a chamber configured for processing a substrate S in a vacuum atmosphere.
  • the term “vacuum”, as used herein, can be understood in the sense of a technical vacuum having a vacuum pressure of less than, for example, 10 mbar.
  • the pressure in a vacuum chamber as described herein may be between 10' 5 mbar and about 10' 8 mbar, more typically between 10' 5 mbar and 10' 7 mbar, and even more typically between about 10' 6 mbar and about 10' 7 mbar.
  • the pressure in the vacuum chamber may be considered to be either the partial pressure of the evaporated material within the vacuum chamber or the total pressure, which may approximately be the same when only the evaporated material is present as a component to be deposited in the vacuum chamber.
  • the total pressure in the vacuum chamber may range from about 10' 4 mbar to about 10' 7 mbar, especially in the case that a second component besides the evaporated material is present in the vacuum chamber, such as a gas or the like.
  • the substrate S is a flexible thin-film substrate
  • the substrate transport is a roll-to-roll substrate transport as exemplarily shown in FIG. 4.
  • the substrate transport may include a source roll 204 from which substrate S is unwound, and a take-up roll 205 onto which the processed substrate S is wound.
  • Source roll 204 may be provided in a first spool chamber 202, and the substrate may pass through a valve or gate between first spool chamber 202 and vacuum chamber 201. Accordingly, first spool chamber 202 may be used as a lock chamber for loading and unloading source roll 204.
  • take-up roll 205 may be provided in a second spool chamber 203, and the substrate may pass through a valve or gate from vacuum chamber 201 to second spool chamber 203. Accordingly, second spool chamber 203 may be used as a lock chamber for loading and unloading take-up roll 205.
  • the substrate transport may further include a plurality of rollers 206 which guide the substrate S through the deposition apparatus 200, particularly past the deposition source 100.
  • Deposition apparatus 200 may further include at least one shield 210 provided for protecting the walls of vacuum chamber 210 and/or other components provided within vacuum chamber 210.
  • the term “downstream from” as used herein may refer to the position of the respective chamber or of the respective component with respect to another chamber or component along the substrate transportation path.
  • the substrate S is guided from the first spool chamber 202 through the vacuum chamber 201 and subsequently guided to the second spool chamber 203 along the substrate transportation path via the plurality of rollers 206.
  • the vacuum chamber 201 is arranged downstream from the first spool chamber 202
  • the second spool chamber 203 is arranged downstream from the vacuum deposition chamber 201.
  • one or more further vacuum chambers may be provided.
  • one or more further vacuum chambers can be provided between the first spool chamber 202 and the vacuum deposition chamber 201.
  • one or more further vacuum chambers can be provided between the vacuum chamber 201 and the second spool chamber 203.
  • deposition apparatus 200 includes a vacuum chamber 201, a deposition source 100 according to aspects and embodiments described herein, the deposition source 100 provided in the vacuum chamber 201, and a source transport for transporting the deposition source 100 past the substrate S.
  • a static deposition apparatus as the substrate S is stationary with respect to the vacuum chamber 201 during the deposition process.
  • a static deposition apparatus according to such an embodiment may be used for depositing a layer of evaporated material on a rigid substrate, such as a glass substrate.
  • One or more methods for operating the deposition source 100 described in the present disclosure are also provided.
  • the methods may further extend to methods for operating the deposition apparatus 200 described in the present disclosure.
  • a method for depositing a layer of evaporated material on a substrate S includes depositing evaporated material onto the substrate from a first deposition zone extending in a first direction, and depositing evaporated material onto the substrate S from a second deposition zone extending in the first direction from the end of the first deposition zone, wherein the evaporated material is deposited from the second deposition zone in a plurality of directions, each direction being tilted towards the first deposition zone.
  • the first deposition zone may correspond to the first nozzle zone 110 of the deposition source 100 described herein
  • the second deposition zone may correspond to the second nozzle zone 120 of the deposition source 100 described herein.
  • the plurality of directions in which evaporated material is deposited from the second deposition zone may each correspond to a direction of orientation of a respective nozzle of the plurality of second nozzles 102 of the deposition source 100 described herein.
  • the evaporated material from the second deposition zone may be directed at a common point P which lies on the substrate.
  • the common point P may lie on the edge of the substrate S. More particularly, the common point P may lie within 50 mm of the edge of the substrate S, more particularly within 10 mm of the edge of the substrate S.
  • the position of the common point P may be adjusted so as to minimize the amount of overlap of the deposition zone over shield 210, in order to reduce wasted material and improve the deposition efficiency.

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
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  • Physical Vapour Deposition (AREA)

Abstract

According to aspects of the present disclosure, a deposition source, a deposition apparatus, and methods for depositing a layer of evaporated material on a substrate are provided. The deposition source (100) includes a crucible (104) for providing evaporated material, a first nozzle zone (110) extending in a first direction and having a first plurality of nozzles (101) in communication with the crucible (104), and a second nozzle zone (120) extending in the first direction from an end of the first nozzle zone (110), the second nozzle zone (120) having a second plurality of nozzles (102) in communication with the crucible (104), wherein each neighbouring nozzle of the second plurality of nozzles (102) is tilted in a direction towards the first nozzle zone. The deposition apparatus (200) includes a vacuum chamber (201), a deposition source (100) according to aspects of the present disclosure, and a substrate transport for transporting the substrate S past the deposition source (100), or a source transport for transporting the deposition source (100) past the substrate S.

Description

DEPOSITION SOURCE, DEPOSITION APPARATUS FOR DEPOSITING EVAPORATED MATERIAL, AND METHODS THEREFOR
TECHNICAL FIELD
[0001 ] Embodiments of the present disclosure relate to evaporation sources, particularly evaporation sources for metal or metal alloys, and deposition apparatuses for depositing one or more layers on a substrate, particularly a flexible substrate. In particular, embodiments of the present disclosure relate to apparatuses for coating a substrate with one or more layers, e.g. for thin-film solar cell production, flexible display production or thin-film battery production. More particularly, embodiments of the present disclosure relate to apparatuses and methods for coating a flexible substrate in a roll-to-roll (R2R) process. Specifically, embodiments of the present disclosure relate to a deposition apparatus having an evaporation source having improved layer uniformity and improved deposition efficiency. Further, embodiments of the present disclosure relate to methods of operating an evaporation source and of operating a deposition apparatus having an evaporation source.
BACKGROUND
[0002] Depositing thin layers on a flexible substrate is a production process for many applications. The flexible substrates are coated in one or more chambers of a flexible substrate coating apparatus. The flexible substrates, such as foils made of plastics or precoated papers, are guided on rolls or drums and pass in this way the source of deposition material. Possible applications of the coated substrate range from providing coated foils for the packaging industry to depositing thin films for flexible electronics and advanced technology applications, such as smartphones, flat screen TVs and solar panels.
[0001] Different deposition processes may be used to achieve a layer with the desired properties. For instance, in a thermal evaporation deposition process, evaporated material is deposited onto a substrate, e.g. a flexible substrate, for providing a coating on the substrate. The properties and the functionality of the coating, inter alia, depend on the coating thickness. Accordingly, there is a demand to control the coating thickness to be within a predetermined range. For instance, the coating thickness can be adjusted by adjusting a deposition rate of the material to be deposited on the substrate.
[0002] When depositing one or more layers of evaporated material on a substrate, particularly a thin-film substrate in a roll-to-roll (R2R) process, achieving high coating uniformity at the edge of the substrate can be challenging. Some solutions exist in the state of the art, such as increasing the number of nozzles at an edge of the substrate, increasing the diameter of nozzles at an edge of the substrate, or adding additional nozzles to overlap the edge of the substrate. However, these approaches typically lead to decreased coating efficiency as the amount of material deposited on the shield increases.
[0003] In view of the above, a deposition source, a deposition apparatus and methods therefor are provided which are improved compared to conventional deposition systems and methods.
SUMMARY
[0004] In light of the above, a deposition source for depositing a layer of evaporated material on a substrate, a deposition apparatus for depositing evaporated material onto a substrate, and a method for depositing a layer of evaporated material on a substrate are provided. Further aspects, advantages, and features are apparent from the dependent claims, the description, and the accompanying drawings.
[0005] According to an aspect of the present disclosure, a deposition source for depositing a layer of evaporated material on a substrate is provided. The deposition source includes a crucible for providing evaporated material, a first nozzle zone extending in a first direction and having a first plurality of nozzles in communication with the crucible, and a second nozzle zone extending in the first direction from an end of the first nozzle zone, the second nozzle zone having a second plurality of nozzles in communication with the crucible, wherein each neighbouring nozzle of the second plurality of nozzles is tilted in a direction towards the first nozzle zone. [0006] According to a further aspect of the present disclosure, a deposition apparatus for depositing evaporated material on a substrate is provided. The deposition apparatus includes a vacuum chamber, a deposition source according to aspects of the present disclosure, and a substrate transport for transporting the substrate past the deposition source.
[0007] According to a further aspect of the present disclosure, a deposition apparatus for depositing evaporated material on a substrate is provided. The deposition apparatus includes a vacuum chamber, a deposition source according to aspects of the present disclosure, and a source transport for transporting the deposition source past the substrate.
[0008] According to a further aspect of the present disclosure, a method for depositing a layer of evaporated material on a substrate is provided. The method includes depositing evaporated material onto the substrate from a first deposition zone extending in a first direction, and depositing evaporated material onto the substrate from a second deposition zone extending in the first direction from the end of the first deposition zone, wherein the evaporated material is deposited from the second deposition zone in a plurality of directions, each direction being tilted towards the first deposition zone.
[0009] Embodiments of the present disclosure allow for improved coating uniformity at an edge of a substrate and improved coating efficiency.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:
FIG. 1 shows a nozzle arrangement of a deposition source and a plot of thickness of a layer deposited on an edge portion of a substrate using the deposition source according to embodiments of the present disclosure; FIG. 2 shows a perspective view of a deposition source according to embodiments of the present disclosure;
FIG. 3 shows a cross-sectional view of a deposition source according to embodiments of the present disclosure; and
FIG. 4 shows a schematic side view of a deposition apparatus according to embodiments of the present disclosure.
DETAILED DESCRIPTION OF EMBODIMENTS
[0011] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.
[0012] Reference will be made to FIG. 1, which shows an arrangement of nozzles 101, 102 of a deposition source 100 across a dimension of a substrate S. Particularly, an arrangement of nozzles across half of a width of substrate S starting from a centerline of the width of substrate S and extending towards an outer edge of substrate S is shown. In the exemplary figures of the present disclosure, only a half of a deposition source 100 is shown extending from the centerline of the substrate S on the left to an outer edge of the substrate S, and it can be expected that the deposition source 100 also extends from the centerline of the substrate S to the opposite outer edge of the substrate S. Particularly, the arrangement of nozzles 101, 102 of deposition source 100 is mirrored about the centerline of substrate S. Nozzles 101, 102 are arranged in a first direction, wherein the first direction extends in a direction parallel to the surface of substrate S. Particularly, the first direction extends in the width direction of substrate S, i.e. in the left-to-right direction of the figures. [0013] As exemplarily shown in FIG. 1, a substrate S having a total width of 1200 mm is provided, extending from the centerline of the substrate S at 0 mm to an outer edge at +600 mm. However, these dimensions are only provided as an example. Deposition source 100 is provided with a plurality of nozzles 101, 102 arranged in the first direction for depositing a layer of evaporated material onto substrate S. A shield 210 is further provided behind substrate S relative to deposition source 100.
[0014] An exemplary plot of the thickness of the resulting layer deposited on substrate S along the width of the substrate S is further shown in FIG. 1. A nominal layer thickness of 1.0 is the target thickness of the layer to be deposited. According to a deposition source of the present state of the art, a first plurality of nozzles 101 is provided in a first nozzle zone 110. Particularly, first nozzle zone 110 extends across the width of the substrate S, and the first plurality of nozzles 101 is evenly distributed in the first direction such that evaporated material is deposited in a direction normal to the surface of substrate S.
[0015] The resulting thickness T2 of the layer deposited on substrate S by the deposition source of the present state of the art is non-uniform. Particularly, the thickness T2 of the layer is diminished in the region near the edge of substrate S. In order to improve the uniformity of the deposited layer, other deposition sources according to the present state the art may provide additional nozzles 101, such that the first nozzle zone 110 extends past the outer edge of substrate S, or may provide nozzles 101 with a larger diameter in the region of the outer edge of substrate S, resulting in a layer thickness T3. However, problems arise with such solutions, as the amount of material which is deposited on shield 210, and not on substrate S, is increased due to the increased width of deposition, leading to increased material waste and compromised deposition efficiency of the deposition source 100.
[0016] To solve the problem of non-uniformity of the layer and compromised deposition efficiency, a deposition source 100 for depositing a layer of evaporated material on a substrate S according to aspects of the present disclosure is provided. The deposition source 100 according to the present disclosure includes a second nozzle zone 120 provided on an outside area of the first nozzle zone 110, wherein each of the nozzles 102 in the second nozzle zone 120 are tilted inwards towards the first nozzle zone 110. By tilting the nozzles 102 in the second nozzle zone 120 in this manner, the amount of material which may be deposited in the region near the outer edge of substrate S may be increased. However, the disadvantageous effects associated with deposition sources of the present state of the art are avoided, in that by tilting the outer nozzles 102 in the second nozzle zone 120, the width of the deposition area is not widened.
[0017] In the context of the present disclosure, any reference to a “direction” or an “orientation” of a nozzle refers to the direction of the principal axis of the nozzle, that is, the principal axis of the spray cone of material emitted by said nozzle. A nozzle being “directed at” or “oriented to” a certain point refers to the principal axis of the nozzle being oriented so as to be directed to said point.
[0018] Referring once again to the plot in FIG. 1, the thickness T3 of the resulting layer deposited from a deposition source 100 according to the present disclosure is shown. The deposition source 100 includes nozzles 101 in the first nozzle zone 110 and nozzles 102 in the second nozzle zone 120, wherein all nozzles 101, 102 are the same diameter and have the same spray cone angle, and the nozzles 102 in the second nozzle zone 120 are directed towards the outer edge of substrate S. The resulting thickness T3 in the region near the outer edge of substrate S can be increased, while the overall width of the deposition area remains relatively narrow. As a result, the thickness in the region near the outer edge of substrate S may be improved without resulting in increased deposition of material on shield 210. It follows that the nozzles 101, 102, particularly the nozzles 102 in the second nozzle zone 120, may be further tuned, e.g. nozzle direction, nozzle diameter or spray cone angle, so as to result in a uniform thickness across the entire width of the substrate S without increasing the width of the deposition area.
[0019] Referring now to FIGS. 2 and 3, the deposition source 100 according to embodiments of the present disclosure includes a crucible 104 for providing evaporated material, a first nozzle zone 110 extending in a first direction and having a first plurality of nozzles 101 in communication with the crucible 104, and a second nozzle zone 120 extending in the first direction and from an end of the first nozzle zone 110, the second nozzle zone 120 having a second plurality of nozzles 102 in communication with the crucible 104. Each neighbouring nozzle of the second plurality of nozzles 102 is tilted in a direction towards the first nozzle zone 110. For the sake of clarity, only an end portion of deposition source 100 is shown in FIGS. 2 and 3, i.e. only the portion of deposition source 100 having the end of first nozzle zone 110 and second nozzle zone 120 is shown, the portion configured for depositing a layer of material in the region near an edge of the substrate S. As mentioned previously, the deposition source 100 may have a second end which is a mirror of the first end shown in the figures, having another second plurality of nozzles 102 in the region near the opposite edge of the substrate S.
[0020] By providing a second nozzle zone 120 having a plurality of nozzles 102 which are tilted towards the first nozzle zone 110, i.e. tilted towards an inner region of the deposition area, the amount of evaporated material which can be deposited in the region of the outer edge of the substrate S can be increased, without making the width of the deposition area excessive such that less waste material is deposited e.g. on a shield 210. It follows that the uniformity of the deposited layer can be improved without compromising deposition efficiency of the deposition source.
[0021] The deposition source 100 according to aspects of the present disclosure may include a manifold 103, a crucible 104 for holding an amount of source material M and having at least one heater, and a connecting pipe 105 therebetween. Nozzles 101, 102 may be arranged on manifold 103 such that each nozzle 101, 102 is in communication with crucible 104. The components of the deposition source 100 combine to form what may be referred to as an evaporator, i.e. a deposition source for evaporating a source material.
[0001] In the present disclosure, an “deposition source for evaporating a source material” can be understood as an evaporator configured for evaporating a source material by heating the source material employing a heater. For instance, the “source material” may be a material having an evaporation temperature of about 100°C to about 600°C. In particular, the “source material” can be an organic material, for instance for organic light emitting diode (OLED) production.
[0002] In the present disclosure, a “crucible” can be understood as a device having a reservoir for the material to be evaporated by heating the crucible. Accordingly, a “crucible” can be understood as a source material reservoir which can be heated to vapourise the source material M into a gas by at least one of evaporation and sublimation of the source material. The reservoir can have an inner volume for receiving the source material M to be evaporated. For example, the inner volume of the crucible can be between 100 cm3 and 3000 cm3, particularly between 700 cm3 and 1700 cm3, more particularly 1200 cm3. [0022] In the present disclosure, a “heater for heating the source material” can be understood as a heating unit or heating device configured to heat the source material M, particularly to vapourise the source material M into a gaseous source material, otherwise referred to as “evaporated material”. Upon heating the source material by the heater as described herein, the source material M provided in the inner volume of the crucible 104 is heated up to a temperature at which the source material M evaporates. For instance, initially the material to be evaporated can be in the form of a powder. As exemplarily shown in FIG. 3, the source material M in crucible 104 is heated and vapourised, and the evaporated material then flows from crucible 104, through connecting pipe 105 and into manifold 103 to be distributed to each of the nozzles 101, 102.
[0023] According to an embodiment, which may be combined with other embodiments described herein, each nozzle of the second plurality of nozzles 102 is tilted at an angle which increases with increasing distance from the first nozzle zone 110. As exemplarily shown in FIG. 3, second nozzle zone 120 is provided with four nozzles 102. The first nozzle 102 which is closest to the first nozzle zone 110 is tilted at a small angle, the second nozzle 102 is tilted slightly more than the first nozzle 102, the third nozzle 102 is tilted slightly more again, and the last nozzle 102 which is farthest from the first nozzle zone 110 has the highest angle of tilt. By progressively tilting the nozzles 102 based on their distance from first nozzle zone 110, the spray cone of the respective nozzle 102 may be oriented so as to overlap the substrate S rather than shield 210.
[0024] According to an embodiment, which may be combined with other embodiments described herein, the second plurality of nozzles 102 may be directed at a common point P which lies on the surface of the substrate S. As exemplarily shown in the figures, the common point P lies on the edge of the substrate S, however the present disclosure is not limited thereto. Particularly, the common point P may lie within 50 mm of the edge of the substrate S, more particularly within 10 mm of the edge of the substrate S. The position of the common point P may be adjusted so as to minimise the amount of overlap of the deposition area over shield 210, in order to reduce wasted material and improve the deposition efficiency.
[0025] The first nozzle zone 110 is exemplarily shown in the figures as extending across the whole width of the substrate S. However, the present disclosure is not limited thereto, and the first nozzle zone 110 may extend in the first direction across less than the width of the substrate or more than the width of the substrate. Particularly, the first nozzle zone 110 may extend in the first direction across at least 80 % of the width of the substrate, across at least 90 % of the width of the substrate, or across at least 95 % of the width of the substrate. Particularly, the first nozzle zone 110 may extend in the first direction up to the common point P which lies on substrate S.
[0026] According to an embodiment, which may be combined with other embodiments described herein, the first plurality of nozzles 101 and the second plurality of nozzles 102 may be arranged along the first direction. Particularly, the first plurality of nozzles 101 and the second plurality of nozzles 102 may be arranged along a common line across the width direction of the substrate S. However, the present disclosure is not limited thereto, and the nozzles 101, 102 may be arranged in alternative arrangements. For example, the first plurality of nozzles 101 and/or the second plurality of nozzles 102 may be arranged in one or more rows of nozzles 101, 102, in a zigzag arrangement of nozzles 101, 102, or with non- uniform distances between nozzles.
[0027] According to an embodiment, which may be combined with other embodiments described herein, each of the nozzles of the first plurality of nozzles 101 is oriented in a direction normal to the substrate S. A normal orientation of the first plurality of nozzles 101 allows for the uniformity of the layer of deposited material in the inner region of the substrate, i.e. the region between the outer edge regions of the substrate S, to be maintained. However, the present disclosure is not limited thereto, and one or more nozzles of the first plurality of nozzles 101 may be tilted in a forwards or backwards direction relative to a transport direction of the substrate S. Particularly, one or more nozzles of the first plurality of nozzles 101 may be tilted in the plane defined by the transport direction of the substrate S and the direction normal to the substrate S. More particularly, one or more nozzles of the first plurality of nozzles may be tilted about an axis corresponding to the first direction.
[0028] The direction in which each of the nozzles of the second plurality of nozzles 102 is tilted is towards the first nozzle zone 110. In other words, each nozzle of the second plurality of nozzles 102, which are arranged outside of the first nozzle zone 110, are tilted inwards towards the first nozzle zone 110. More particularly, a plane may be defined by the first direction in which the nozzles 101, 102 extend and a direction normal to the substrate S, wherein each nozzle of the second plurality of nozzles 102 are tilted in said plane.
[0029] In order to further tune the uniformity of the deposited layer in the region near the edge of substrate S, properties of the second plurality of nozzles 102 can be adjusted. For example, the diameter of the respective nozzles can be increased to deposit more material from a specific nozzle, or reduced to deposit less material from a specific nozzle. According to an embodiment, which may be combined with other embodiments described herein, the first plurality of nozzles 101 may have a first nozzle diameter, and the second plurality of nozzles 102 may have a second nozzle diameter smaller than the first nozzle diameter. More particularly, the nozzle diameter of each nozzle of the second plurality of nozzles 102 may be progressively reduced based on the distance to the first nozzle zone 110. For example, a first nozzle of the second plurality of nozzles 102 which is closest to the first nozzle zone 110 may have a diameter equal to or slightly smaller than the first nozzle diameter, and a last nozzle of the second plurality of nozzles 102 which is farthest from the first nozzle zone 110 may have the smallest diameter of the second plurality of nozzles 102.
[0030] Similarly, the spray cone angle of the respective nozzles of the second plurality of nozzles 102 may be adjusted to tune the uniformity of the deposited layer in the region near the edge of substrate S. For example, the spray cone angle of the respective nozzles can be increased to deposit material from a specific nozzle in a wider deposition zone, or reduced to deposit material from a specific nozzle in a narrower deposition zone. According to an embodiment, which may be combined with other embodiments described herein, the first plurality of nozzles 101 may have a first spray cone angle, and the second plurality of nozzles 102 may have a second spray cone angle smaller than the first spray cone angle. More particularly, the spray cone angle of each nozzle of the second plurality of nozzles 102 may be progressively reduced based on the distance to the first nozzle zone 110. For example, a first nozzle of the second plurality of nozzles 102 which is closest to the first nozzle zone 110 may have a spray cone angle equal to or slightly smaller than the first nozzle diameter, and a last nozzle of the second plurality of nozzles 102 which is farthest from the first nozzle zone 110 may have the smallest spray cone angle of the second plurality of nozzles 102.
[0031] The angle at which each respective nozzle of the second plurality of nozzles 102 is tilted is dependent on the distance D from the nozzles to the surface of the substrate S in a direction normal to the substrate S. Particularly, the distance D may be defined as the distance in the direction normal to the substrate S from the outlets of the first plurality of nozzles 101 to the deposition surface of substrate S. If the distance D is greater than the width of the second nozzle zone 120, the angles at which the outermost nozzles of the second plurality of nozzles 102 are tilted may become excessive. Accordingly, the second nozzle zone 120 may have a length in the first direction which is smaller than the distance D between the first plurality of nozzles 101 and the substrate S.
[0032] Referring now to FIG. 4, according to a further aspect of the present disclosure, a deposition apparatus 200 for depositing evaporated material onto a substrate is provided. The deposition apparatus 200 includes a vacuum chamber 201, a deposition source 100 according to aspects and embodiments described herein provided in the vacuum chamber 201, and a substrate transport for transporting the substrate S past the deposition source 100. Such an arrangement is referred to as a “dynamic” deposition apparatus, as the substrate S is moved relative to the vacuum chamber 201 during the deposition process. For example, a dynamic deposition apparatus according to such an embodiment may be used for depositing a layer of evaporated material on a flexible substrate, such as a web or foil, or on a rigid substrate, such as a glass substrate.
[0033] In the present disclosure, a “vacuum chamber” is to be understood as a chamber configured for processing a substrate S in a vacuum atmosphere. The term “vacuum”, as used herein, can be understood in the sense of a technical vacuum having a vacuum pressure of less than, for example, 10 mbar. Typically, the pressure in a vacuum chamber as described herein may be between 10'5 mbar and about 10'8 mbar, more typically between 10'5 mbar and 10'7 mbar, and even more typically between about 10'6 mbar and about 10'7 mbar. According to some embodiments, the pressure in the vacuum chamber may be considered to be either the partial pressure of the evaporated material within the vacuum chamber or the total pressure, which may approximately be the same when only the evaporated material is present as a component to be deposited in the vacuum chamber. In some embodiments, the total pressure in the vacuum chamber may range from about 10'4 mbar to about 10'7 mbar, especially in the case that a second component besides the evaporated material is present in the vacuum chamber, such as a gas or the like. [0034] According to the preferred embodiment, the substrate S is a flexible thin-film substrate, and the substrate transport is a roll-to-roll substrate transport as exemplarily shown in FIG. 4. The substrate transport may include a source roll 204 from which substrate S is unwound, and a take-up roll 205 onto which the processed substrate S is wound. Source roll 204 may be provided in a first spool chamber 202, and the substrate may pass through a valve or gate between first spool chamber 202 and vacuum chamber 201. Accordingly, first spool chamber 202 may be used as a lock chamber for loading and unloading source roll 204. Similarly, take-up roll 205 may be provided in a second spool chamber 203, and the substrate may pass through a valve or gate from vacuum chamber 201 to second spool chamber 203. Accordingly, second spool chamber 203 may be used as a lock chamber for loading and unloading take-up roll 205. The substrate transport may further include a plurality of rollers 206 which guide the substrate S through the deposition apparatus 200, particularly past the deposition source 100. Deposition apparatus 200 may further include at least one shield 210 provided for protecting the walls of vacuum chamber 210 and/or other components provided within vacuum chamber 210.
[0003] The term “downstream from” as used herein may refer to the position of the respective chamber or of the respective component with respect to another chamber or component along the substrate transportation path. For example, during operation, the substrate S is guided from the first spool chamber 202 through the vacuum chamber 201 and subsequently guided to the second spool chamber 203 along the substrate transportation path via the plurality of rollers 206. Accordingly, the vacuum chamber 201 is arranged downstream from the first spool chamber 202, and the second spool chamber 203 is arranged downstream from the vacuum deposition chamber 201.
[0035] Although not explicitly shown, it is to be understood that according to some embodiments which can be combined with other embodiments described herein, one or more further vacuum chambers may be provided. For instance, one or more further vacuum chambers can be provided between the first spool chamber 202 and the vacuum deposition chamber 201. Additionally or alternatively, one or more further vacuum chambers can be provided between the vacuum chamber 201 and the second spool chamber 203.
[0036] According to an alternative embodiment, deposition apparatus 200 includes a vacuum chamber 201, a deposition source 100 according to aspects and embodiments described herein, the deposition source 100 provided in the vacuum chamber 201, and a source transport for transporting the deposition source 100 past the substrate S. Such an arrangement is referred to as a “static” deposition apparatus, as the substrate S is stationary with respect to the vacuum chamber 201 during the deposition process. For example, a static deposition apparatus according to such an embodiment may be used for depositing a layer of evaporated material on a rigid substrate, such as a glass substrate.
[0037] One or more methods for operating the deposition source 100 described in the present disclosure, particularly one or more methods for depositing a layer of evaporated material on a substrate S using the deposition source 100 described herein, are also provided. The methods may further extend to methods for operating the deposition apparatus 200 described in the present disclosure.
[0038] According to a further aspect of the present disclosure, a method for depositing a layer of evaporated material on a substrate S is provided. The method includes depositing evaporated material onto the substrate from a first deposition zone extending in a first direction, and depositing evaporated material onto the substrate S from a second deposition zone extending in the first direction from the end of the first deposition zone, wherein the evaporated material is deposited from the second deposition zone in a plurality of directions, each direction being tilted towards the first deposition zone. Particularly, the first deposition zone may correspond to the first nozzle zone 110 of the deposition source 100 described herein, and the second deposition zone may correspond to the second nozzle zone 120 of the deposition source 100 described herein. The plurality of directions in which evaporated material is deposited from the second deposition zone may each correspond to a direction of orientation of a respective nozzle of the plurality of second nozzles 102 of the deposition source 100 described herein.
[0039] According to an embodiment, which may be combined with other embodiments described herein, the evaporated material from the second deposition zone may be directed at a common point P which lies on the substrate. Particularly, the common point P may lie on the edge of the substrate S. More particularly, the common point P may lie within 50 mm of the edge of the substrate S, more particularly within 10 mm of the edge of the substrate S. The position of the common point P may be adjusted so as to minimize the amount of overlap of the deposition zone over shield 210, in order to reduce wasted material and improve the deposition efficiency.
[0040] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A deposition source (100) for depositing a layer of evaporated material on a substrate (S), comprising: a crucible (104) for providing evaporated material; a first nozzle zone (110) extending in a first direction and having a first plurality of nozzles (101) in communication with the crucible (104); and a second nozzle zone (120) extending in the first direction from an end of the first nozzle zone (110), the second nozzle zone (120) having a second plurality of nozzles (102) in communication with the crucible (104), wherein each neighbouring nozzle of the second plurality of nozzles (102) is tilted in a direction towards the first nozzle zone (110).
2. The deposition source (100) according to claim 1, wherein each nozzle of the second plurality of nozzles (102) is tilted at an angle which increases with increasing distance from the first nozzle zone (110).
3. The deposition source (100) according to any one of claims 1 and 2, wherein the second plurality of nozzles (102) are directed at a common point (P) which lies on the surface of the substrate (S).
4. The deposition source (100) according to claim 3, wherein the first nozzle zone (110) extends in the first direction up to the common point (P), and the common point (P) lies within 50 mm of the edge of the substrate (S), particularly within 10 mm of the edge of the substrate (S), more particularly on the edge of the substrate (S).
5. The deposition source (100) according to any one of claims 1 to 4, wherein the first plurality of nozzles (101) and the second plurality of nozzles (102) are arranged along the first direction.
6. The deposition source (100) according to any one of claims 1 to 5, wherein the second plurality of nozzles (102) are tilted in a plane defined by the first direction and a direction normal to the substrate (S).
7. The deposition source (100) according to any one of claims 1 to 6, wherein each of the nozzles of the first plurality of nozzles (101) is oriented in a direction normal to the substrate (S).
8. The deposition source (100) according to any one of claims 1 to 7, wherein the first plurality of nozzles (101) have a first nozzle diameter, and the second plurality of nozzles (102) have a second nozzle diameter smaller than the first nozzle diameter.
9. The deposition source (100) according to any one of claims 1 to 8, wherein the first plurality of nozzles (101) have a first spray cone angle, and the second plurality of nozzles (102) have a second spray cone angle smaller than the first spray cone angle.
10. The deposition source (100) according to any one of claims 1 to 9, wherein the second nozzle zone (120) has a length in the first direction which is smaller than a distance (D) between the first plurality of nozzles (101) and the substrate (S).
11. A deposition apparatus (200) for depositing evaporated material onto a substrate (S), comprising: a vacuum chamber (201); a deposition source (100) according to any one of claims 1 to 10 provided in the vacuum chamber (201); and a substrate transport for transporting the substrate past the deposition source (100).
12. The deposition apparatus (200) according to claim 11, wherein the substrate (S) is a flexible thin-film substrate, and the substrate transport is a roll-to-roll substrate transport.
13. A deposition apparatus (200) for depositing evaporated material onto a substrate, comprising: a vacuum chamber (201); a deposition source (100) according to any one of claims 1 to 10 provided in the vacuum chamber (201); and a source transport for transporting the deposition source (100) past the substrate (S).
14. A method for depositing a layer of evaporated material on a substrate (S), comprising: depositing evaporated material onto the substrate from a first deposition zone extending in a first direction; and depositing evaporated material onto the substrate (S) from a second deposition zone extending in the first direction from the end of the first deposition zone,
17 wherein the evaporated material is deposited from the second deposition zone in a plurality of directions, each direction being tilted towards the first deposition zone.
15. The method according to claim 14, wherein the evaporated material deposited from the second deposition zone is directed at a common point (P) which lies on the substrate
(S).
16. The method according to claim 15, wherein the first deposition zone extends in the first direction up to the common point (P), and the common point (P) lies within 50 mm of an edge of the substrate (S), particularly within 20 mm of the edge of the substrate (S), more particularly on the edge of the substrate (S).
18
PCT/EP2020/080294 2020-10-28 2020-10-28 Deposition source, deposition apparatus for depositing evaporated material, and methods therefor WO2022089737A1 (en)

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EP20820783.7A EP4237593A1 (en) 2020-10-28 2020-10-28 Deposition source, deposition apparatus for depositing evaporated material, and methods therefor
CN202080106890.8A CN116635566A (en) 2020-10-28 2020-10-28 Deposition source, deposition apparatus and method for depositing vapor deposition material

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Citations (4)

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US20150114297A1 (en) * 2012-06-08 2015-04-30 Sharp Kabushiki Kaisha Vapor deposition device
KR20200029670A (en) * 2018-09-10 2020-03-19 삼성디스플레이 주식회사 Depositing apparatus and method for manufacturing organic light emitting diode display using the same
KR20200033457A (en) * 2018-09-20 2020-03-30 주식회사 원익아이피에스 Linear source and substrate processing system having the same
JP2020063511A (en) * 2019-11-29 2020-04-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Evaporation source for depositing evaporated material, and method for depositing evaporated material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150114297A1 (en) * 2012-06-08 2015-04-30 Sharp Kabushiki Kaisha Vapor deposition device
KR20200029670A (en) * 2018-09-10 2020-03-19 삼성디스플레이 주식회사 Depositing apparatus and method for manufacturing organic light emitting diode display using the same
KR20200033457A (en) * 2018-09-20 2020-03-30 주식회사 원익아이피에스 Linear source and substrate processing system having the same
JP2020063511A (en) * 2019-11-29 2020-04-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Evaporation source for depositing evaporated material, and method for depositing evaporated material

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