WO2022077525A1 - Method for manufacturing flexible electronic device - Google Patents

Method for manufacturing flexible electronic device Download PDF

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WO2022077525A1
WO2022077525A1 PCT/CN2020/121724 CN2020121724W WO2022077525A1 WO 2022077525 A1 WO2022077525 A1 WO 2022077525A1 CN 2020121724 W CN2020121724 W CN 2020121724W WO 2022077525 A1 WO2022077525 A1 WO 2022077525A1
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flexible substrate
electronic device
manufacturing
original
graphene oxide
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PCT/CN2020/121724
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French (fr)
Chinese (zh)
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孔善右
张仕明
黄德云
葛栋
李丽咱
任军韦华
朱崇芝
王国庆
王梓
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江苏仕邦柔性电子研究院有限公司
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Publication of WO2022077525A1 publication Critical patent/WO2022077525A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2300/00—Characterised by the use of unspecified polymers

Definitions

  • the invention relates to a manufacturing method of an electronic device, in particular to a manufacturing method of a flexible electronic device.
  • the purpose of the present invention is to provide a manufacturing method of a flexible electronic device to solve the shortcomings of the prior art.
  • the present invention adopts the following technical scheme to realize:
  • a manufacturing method of a flexible electronic device characterized in that the method comprises the following steps:
  • step 1) the flexible substrate is semi-soaked in a silver nitrate solution.
  • the flexible substrate forms an original area and a permeable area, and a semi-permeable area is formed between the original area and the permeable area to form a whole.
  • a modified membrane is provided.
  • the semi-immersion refers to that half of the flexible substrate is exposed to the outside, and the other half is immersed in the silver nitrate solution.
  • the part of the flexible substrate exposed to the outside is placed in a pure nitrogen environment.
  • the modified film is a reductive graphene oxide modified film.
  • the preparation method of the reductive graphene oxide modified film is as follows: dissolving the reductive graphene oxide in a dimethylacetamide solution to obtain the original graphene oxide-dimethylacetamide dispersion; The original graphene oxide-dimethylacetamide dispersion is mixed with anhydrous lithium chloride to obtain a mixed solution, then a coagulation solution mixed with ethanol and deionized water is added, fully mixed and left to stand, and finally the preparation method is prepared by phase inversion. A reduced graphene oxide modified film was obtained.
  • step 3 the flexible substrate is taken out and left at room temperature for 11-13 minutes.
  • a modified film is mounted on one side of the flexible substrate, and fibrous substances are added to the coagulation liquid.
  • the fiber material is polyphenylene sulfide fiber
  • the polyphenylene sulfide fiber is woven into a hollow braided tube with a diameter of 1.2 to 1.5 mm using a two-dimensional braiding technology.
  • the beneficial technical effect of the invention is that: the flexible substrate of the electronic device is subjected to a semi-immersion process through the silver nitrate solution, and the original area and the permeation area are formed on the basis of the original flexible substrate, and the two areas are also formed between the two areas.
  • the semi-permeable region can increase the toughness and durability of the flexible substrate while maintaining the flexibility of the flexible substrate.
  • the modified film of the flexible substrate is improved so that it has excellent adsorption performance, prevents cracks when setting electronic circuits, ensures the feasibility of the functional layer, and avoids the influence of stress during manufacturing and use.
  • Fig. 1 is a process flow diagram of the present invention.
  • the manufacturing method of a flexible electronic device includes the following steps:
  • step 1) the flexible substrate is semi-soaked in a silver nitrate solution.
  • the flexible substrate forms an original area and a permeable area.
  • the semi-permeable area forms a whole between the original area and the permeable area.
  • the semi-permeable area is provided with the component to be installed, and the component to be installed is provided with a modified membrane.
  • Semi-immersed It means that half of the flexible substrate is exposed to the outside world, and the other half is immersed in silver nitrate solution.
  • the part of the flexible substrate exposed to the outside is placed in a pure nitrogen environment, and the modified film is a reduced graphene oxide modified film.
  • the element to be mounted with the modified film is cut by a cutting device and separated to form a final product.
  • the preparation method of the reducing graphene oxide modified film is: dissolving the reducing graphene oxide in a dimethylacetamide solution to obtain the original graphene oxide-dimethylacetamide dispersion Mix the original graphene oxide-dimethylacetamide dispersion into anhydrous lithium chloride to obtain a mixed solution, then add a coagulation solution mixed with ethanol and deionized water, mix well and let stand, and finally pass the phase inversion.
  • the preparation method obtains a reductive graphene oxide modified film.
  • step 3 the flexible substrate is taken out and allowed to stand at room temperature for 11-13 minutes.
  • a modified film is mounted on one side of the flexible substrate, and fibrous substances are added to the coagulation liquid.
  • the fiber material is polyphenylene sulfide fiber
  • the polyphenylene sulfide fiber is woven into a hollow braided tube with a diameter of 1.2 to 1.5 mm using a two-dimensional weaving technology.
  • the flexible substrate of the electronic device is subjected to a semi-immersion process with silver nitrate solution, and an original area and a permeable area are formed on the basis of the original flexible substrate, and a semi-permeable area is also formed between the two areas, which can Increase the toughness and durability of the flexible substrate while maintaining the flexibility of the flexible substrate.
  • the modified film of the flexible substrate is improved so that it has excellent adsorption performance, prevents cracks when setting electronic circuits, ensures the feasibility of the functional layer, and avoids the influence of stress during manufacturing and use.

Abstract

Disclosed is a method for manufacturing a flexible electronic device, comprising the following steps: 1) performing permeation treatment on a flexible substrate, and soaking the flexible substrate in 50% of a silver nitrate solution under the condition of a temperature of 40-50°C for 1 h to 1.5 h; 2) in the step 1), semi-soaking the flexible substrate in the silver nitrate solution; 3) taking out the flexible substrate, and standing for 10 to 15 minutes at normal temperature; and 4) forming an original region and a permeation region on the flexible substrate, a semi-permeation region being formed between the original region and the permeation region so as to form a whole, a position for mounting an element being provided in the semi-permeation region, and a modified film being provided at the position for mounting an element. According to the present invention, a semi-soaking process is performed on a flexible substrate of an electronic device by means of a silver nitrate solution, an original region and a permeation region are formed on the basis of the original flexible substrate, and a semi-permeation region is formed between the two regions, so that the toughness and durability of the flexible substrate can be improved, and the flexibility of the flexible substrate is maintained.

Description

一种柔性电子器件的制作方法A kind of manufacturing method of flexible electronic device 技术领域technical field
本发明涉及一种电子器件的制作方法，尤其涉及一种柔性电子器件的制作方法。The invention relates to a manufacturing method of an electronic device, in particular to a manufacturing method of a flexible electronic device.
背景技术Background technique
在现有技术的电子印刷领域，电子器件的制备需要繁复的固定程序，在制作的过程中还会产生资源浪费和环境污染等诸多问题。在柔性电子领域还需要通过刻蚀制备模具才能制备特定形状的电子器件。目前的柔性器件衬底都是基于模具成型的，模具的制备过程复杂且无法重复使用，不具有可编辑性，柔性和韧性也较差，基于组装拼接和三明治结构的柔性电子器件制作工艺和方法已经不能满足人们的要求，亟需得到改进。In the field of electronic printing in the prior art, the preparation of electronic devices requires complicated and fixed procedures, and many problems such as resource waste and environmental pollution are also generated during the production process. In the field of flexible electronics, it is also necessary to prepare molds by etching to prepare electronic devices of specific shapes. The current flexible device substrates are formed based on molds. The preparation process of the molds is complex and cannot be reused. It can no longer meet people's requirements and needs to be improved.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种柔性电子器件的制作方法，解决现有技术存在的缺憾。The purpose of the present invention is to provide a manufacturing method of a flexible electronic device to solve the shortcomings of the prior art.
本发明采用如下技术方案实现：The present invention adopts the following technical scheme to realize:
一种柔性电子器件的制作方法，其特征在于，该方法包括如下步骤：A manufacturing method of a flexible electronic device, characterized in that the method comprises the following steps:
1)针对柔性衬底进行渗透处理，在温度为40～50℃条件下浸泡于50％的硝酸银溶液中，持续1h至1.5h；1) Infiltrate the flexible substrate, soak it in a 50% silver nitrate solution at a temperature of 40 to 50 °C for 1 to 1.5 hours;
2)在步骤1)中，柔性衬底是半浸泡于硝酸银溶液中。2) In step 1), the flexible substrate is semi-soaked in a silver nitrate solution.
3)取出柔性衬底，在进行常温下静置10至15分钟；3) Take out the flexible substrate and let it stand at room temperature for 10 to 15 minutes;
4)所述柔性衬底形成原始区域和渗透区域，所述原始区域和渗透区域之间通过半渗透区域形成一个整体，在所述半渗透区域内设置有待安装元件处，所述待安装元件处设置有改性膜。4) The flexible substrate forms an original area and a permeable area, and a semi-permeable area is formed between the original area and the permeable area to form a whole. A modified membrane is provided.
进一步的，所述半浸泡指的是：柔性衬底一半暴露于外界，另一半浸泡于硝酸银溶液中。Further, the semi-immersion refers to that half of the flexible substrate is exposed to the outside, and the other half is immersed in the silver nitrate solution.
进一步的，所述柔性衬底暴露于外界的部分置于纯氮气环境中。Further, the part of the flexible substrate exposed to the outside is placed in a pure nitrogen environment.
进一步的，所述改性膜为还原性氧化石墨烯改性膜。Further, the modified film is a reductive graphene oxide modified film.
进一步的，所述还原性氧化石墨烯改性膜的制备方法为：将还原性氧化石墨烯溶解于二甲基乙酰胺溶液，得到原性氧化石墨烯-二甲基乙酰胺分散液；将所述原性氧化石墨烯-二甲基乙酰胺分散液混入无水氯化锂，制得混合液，再加入乙醇和去离子水混合的凝固液，充分混合并静置，最后通过相转化制备方法获得还原性氧化石墨烯改性膜。Further, the preparation method of the reductive graphene oxide modified film is as follows: dissolving the reductive graphene oxide in a dimethylacetamide solution to obtain the original graphene oxide-dimethylacetamide dispersion; The original graphene oxide-dimethylacetamide dispersion is mixed with anhydrous lithium chloride to obtain a mixed solution, then a coagulation solution mixed with ethanol and deionized water is added, fully mixed and left to stand, and finally the preparation method is prepared by phase inversion. A reduced graphene oxide modified film was obtained.
进一步的，在步骤3)中，取出柔性衬底，在常温下静置11-13分钟。Further, in step 3), the flexible substrate is taken out and left at room temperature for 11-13 minutes.
进一步的，在柔性衬底的一面贴装改性膜，在所述凝固液中加入纤维物质。Further, a modified film is mounted on one side of the flexible substrate, and fibrous substances are added to the coagulation liquid.
进一步的，所述纤维物质是聚苯硫醚纤维，聚苯硫醚纤维利用二维编织技术编织成中空编织管，直径为1.2至1.5mm。Further, the fiber material is polyphenylene sulfide fiber, and the polyphenylene sulfide fiber is woven into a hollow braided tube with a diameter of 1.2 to 1.5 mm using a two-dimensional braiding technology.
本发明具备的有益技术效果是：通过硝酸银溶液对电子器件的柔性衬底进半浸泡工艺，在原有柔性衬底的基础之上形成了原始区域和渗透区域，在两个区域之间还形成了半渗透区域，能够增加柔性衬底的韧性和耐久性，同时保持柔性衬底的柔性。对于柔性衬底的改性膜加以改进，使其具备了优异的吸附性能，防止在设置电子线路时出现裂纹，保证了功能层的可行性，避免制造和使用过程中产生应力的影响。The beneficial technical effect of the invention is that: the flexible substrate of the electronic device is subjected to a semi-immersion process through the silver nitrate solution, and the original area and the permeation area are formed on the basis of the original flexible substrate, and the two areas are also formed between the two areas. The semi-permeable region can increase the toughness and durability of the flexible substrate while maintaining the flexibility of the flexible substrate. The modified film of the flexible substrate is improved so that it has excellent adsorption performance, prevents cracks when setting electronic circuits, ensures the feasibility of the functional layer, and avoids the influence of stress during manufacturing and use.
附图说明Description of drawings
图1是本发明的工艺流程图。Fig. 1 is a process flow diagram of the present invention.
具体实施方式Detailed ways
通过下面对实施例的描述，将更加有助于公众理解本发明，但不能也不应当将申请人所给出的具体的实施例视为对本发明技术方案的限制，任何对部件或技术特征的定义进行改变和/或对整体结构作形式的而非实质的变换都应视为本发明的技术方案所限定的保护范围。The following description of the embodiments will be more helpful for the public to understand the present invention, but the specific embodiments given by the applicant cannot and should not be regarded as limitations on the technical solutions of the present invention. Changes in the definition of the present invention and/or formal but not substantial changes to the overall structure shall be regarded as the protection scope limited by the technical solutions of the present invention.
如图1所示的柔性电子器件的制作方法，该方法包括如下步骤：As shown in FIG. 1, the manufacturing method of a flexible electronic device includes the following steps:
1)针对柔性衬底进行渗透处理，在温度为40～50℃条件下浸泡于50％的硝酸银溶液中，持续1h至1.5h；1) Infiltrate the flexible substrate, soak it in a 50% silver nitrate solution at a temperature of 40 to 50 °C for 1 to 1.5 hours;
2)在步骤1)中，柔性衬底是半浸泡于硝酸银溶液中。2) In step 1), the flexible substrate is semi-soaked in a silver nitrate solution.
3)取出柔性衬底，在进行常温下静置10至15分钟；3) Take out the flexible substrate and let it stand at room temperature for 10 to 15 minutes;
4)柔性衬底形成原始区域和渗透区域，原始区域和渗透区域之间通过半渗透区域形成一个整体，在半渗透区域内设置有待安装元件处，待安装元件处设置有改性膜，半浸泡指的是：柔性衬底一半暴露于外界，另一半浸泡于硝酸银溶液中。在本实施例中，柔性衬底暴露于外界的部分置于纯氮气环境中，改性膜为还原性氧化石墨烯改性膜。最后，设置有改性膜的待安装元件处通过切割装置进行切割并分离出来形成最终产品。4) The flexible substrate forms an original area and a permeable area. The semi-permeable area forms a whole between the original area and the permeable area. The semi-permeable area is provided with the component to be installed, and the component to be installed is provided with a modified membrane. Semi-immersed It means that half of the flexible substrate is exposed to the outside world, and the other half is immersed in silver nitrate solution. In this embodiment, the part of the flexible substrate exposed to the outside is placed in a pure nitrogen environment, and the modified film is a reduced graphene oxide modified film. Finally, the element to be mounted with the modified film is cut by a cutting device and separated to form a final product.
在上述实施例的基础之上，还原性氧化石墨烯改性膜的制备方法是：将还原性氧化石墨烯溶解于二甲基乙酰胺溶液，得到原性氧化石墨烯-二甲基乙酰胺分散液；将原性氧化石墨烯-二甲基乙酰胺分散液混入无水氯化锂，制得混合液，再加入乙醇和去离子水混合的凝固液，充分混合并静置，最后通过相转化制备方法获得还原性氧化石墨烯改性膜。On the basis of the above embodiment, the preparation method of the reducing graphene oxide modified film is: dissolving the reducing graphene oxide in a dimethylacetamide solution to obtain the original graphene oxide-dimethylacetamide dispersion Mix the original graphene oxide-dimethylacetamide dispersion into anhydrous lithium chloride to obtain a mixed solution, then add a coagulation solution mixed with ethanol and deionized water, mix well and let stand, and finally pass the phase inversion. The preparation method obtains a reductive graphene oxide modified film.
进一步的，在步骤3)中，取出柔性衬底，在进行常温下静置11-13分钟。Further, in step 3), the flexible substrate is taken out and allowed to stand at room temperature for 11-13 minutes.
进一步的，在柔性衬底的一面贴装改性膜，在凝固液中加入纤维物质。Further, a modified film is mounted on one side of the flexible substrate, and fibrous substances are added to the coagulation liquid.
进一步的，纤维物质是聚苯硫醚纤维，聚苯硫醚纤维利用二维编织技术编织成中空编织管，直径为1.2至1.5mm。Further, the fiber material is polyphenylene sulfide fiber, and the polyphenylene sulfide fiber is woven into a hollow braided tube with a diameter of 1.2 to 1.5 mm using a two-dimensional weaving technology.
本实施例通过硝酸银溶液对电子器件的柔性衬底进半浸泡工艺，在原有柔性衬底的基础之上形成了原始区域和渗透区域，在两个区域之间还形成了半渗透区域，能够增加柔性衬底的韧性和耐久性，同时保持柔性衬底的柔性。对于柔性衬底的改性膜加以改进，使其具备了优异的吸附性能，防止在设置电子线路时出现裂纹，保证了功能层的可行性，避免制造和使用过程中产生应力的影响。In this embodiment, the flexible substrate of the electronic device is subjected to a semi-immersion process with silver nitrate solution, and an original area and a permeable area are formed on the basis of the original flexible substrate, and a semi-permeable area is also formed between the two areas, which can Increase the toughness and durability of the flexible substrate while maintaining the flexibility of the flexible substrate. The modified film of the flexible substrate is improved so that it has excellent adsorption performance, prevents cracks when setting electronic circuits, ensures the feasibility of the functional layer, and avoids the influence of stress during manufacturing and use.
当然，本发明还可以有其他多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员可以根据本发明做出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Of course, the present invention can also have other various embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should belong to the protection scope of the appended claims of the present invention.

Claims (8)

  1. 一种柔性电子器件的制作方法，其特征在于，该方法包括如下步骤：A manufacturing method of a flexible electronic device, characterized in that the method comprises the following steps:
    1)针对柔性衬底进行渗透处理，在温度为40～50℃条件下浸泡于50％的硝酸银溶液中，持续1h至1.5h；1) Infiltrate the flexible substrate, soak it in a 50% silver nitrate solution at a temperature of 40 to 50 °C for 1 to 1.5 hours;
    2)在步骤1)中，柔性衬底是半浸泡于硝酸银溶液中。2) In step 1), the flexible substrate is semi-soaked in a silver nitrate solution.
    3)取出柔性衬底，在进行常温下静置10至15分钟；3) Take out the flexible substrate and let it stand at room temperature for 10 to 15 minutes;
    4)所述柔性衬底形成原始区域和渗透区域，所述原始区域和渗透区域之间通过半渗透区域形成一个整体，在所述半渗透区域内设置有待安装元件处，所述待安装元件处设置有改性膜。4) The flexible substrate forms an original area and a permeable area, and a semi-permeable area is formed between the original area and the permeable area to form a whole. A modified membrane is provided.
  2. 根据权利要求1所述的柔性电子器件的制作方法，其特征在于，所述半浸泡指的是：柔性衬底一半暴露于外界，另一半浸泡于硝酸银溶液中。The method for manufacturing a flexible electronic device according to claim 1, wherein the semi-immersion refers to that half of the flexible substrate is exposed to the outside, and the other half is immersed in a silver nitrate solution.
  3. 根据权利要求2所述的柔性电子器件的制作方法，其特征在于，所述柔性衬底暴露于外界的部分置于纯氮气环境中。The method for manufacturing a flexible electronic device according to claim 2, wherein the part of the flexible substrate exposed to the outside is placed in a pure nitrogen environment.
  4. 根据权利要求1所述的柔性电子器件的制作方法，其特征在于，所述改性膜为还原性氧化石墨烯改性膜。The method for manufacturing a flexible electronic device according to claim 1, wherein the modified film is a reduced graphene oxide modified film.
  5. 根据权利要求4所述的柔性电子器件的制作方法，其特征在于，所述还原性氧化石墨烯改性膜的制备方法为：将还原性氧化石墨烯溶解于二甲基乙酰胺溶液，得到原性氧化石墨烯-二甲基乙酰胺分散液；将所述原性氧化石墨烯-二甲基乙酰胺分散液混入无水氯化锂，制得混合液，再加入乙醇和去离子水混合的凝固液，充分混合并静置，最后通过相转化制备方法获得还原性氧化石墨烯改性膜。The method for manufacturing a flexible electronic device according to claim 4, wherein the method for preparing the reductive graphene oxide modified film is as follows: dissolving the reductive graphene oxide in a dimethylacetamide solution to obtain the original The original graphene oxide-dimethylacetamide dispersion; the original graphene oxide-dimethylacetamide dispersion is mixed into anhydrous lithium chloride to obtain a mixed solution, and then a mixed solution of ethanol and deionized water is added. The coagulation liquid is fully mixed and allowed to stand, and finally a reduced graphene oxide modified film is obtained by a phase inversion preparation method.
  6. 根据权利要求1所述的柔性电子器件的制作方法，其特征在于，在步骤3)中，取出柔性衬底，在常温下静置11-13分钟。The method for manufacturing a flexible electronic device according to claim 1, wherein in step 3), the flexible substrate is taken out and left at room temperature for 11-13 minutes.
  7. 根据权利要求5所述的柔性电子器件的制作方法，其特征在于，在柔性衬底的一面贴装改性膜，在所述凝固液中加入纤维物质。The method for manufacturing a flexible electronic device according to claim 5, wherein a modified film is mounted on one side of the flexible substrate, and a fibrous substance is added to the coagulation liquid.
  8. 根据权利要求7所述的柔性电子器件的制作方法，其特征在于，所述纤维物质是聚苯硫醚纤维，聚苯硫醚纤维利用二维编织技术编织成中空编织管，直径为1.2至1.5mm。The method for manufacturing a flexible electronic device according to claim 7, wherein the fiber material is polyphenylene sulfide fiber, and the polyphenylene sulfide fiber is woven into a hollow braided tube with a diameter of 1.2 to 1.5 mm by using a two-dimensional weaving technology. mm.
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