WO2022068121A1 - 一种基于封闭蘑菇状单元结构的双频段三极化天线 - Google Patents

一种基于封闭蘑菇状单元结构的双频段三极化天线 Download PDF

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WO2022068121A1
WO2022068121A1 PCT/CN2021/071183 CN2021071183W WO2022068121A1 WO 2022068121 A1 WO2022068121 A1 WO 2022068121A1 CN 2021071183 W CN2021071183 W CN 2021071183W WO 2022068121 A1 WO2022068121 A1 WO 2022068121A1
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radiator
patch
polarized
dual
shaped unit
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PCT/CN2021/071183
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English (en)
French (fr)
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蒋之浩
张科
洪伟
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东南大学
网络通信与安全紫金山实验室
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Priority to US17/605,005 priority Critical patent/US11824267B2/en
Publication of WO2022068121A1 publication Critical patent/WO2022068121A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/24—Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
    • H01Q19/005—Patch antenna using one or more coplanar parasitic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H01Q21/0037—Particular feeding systems linear waveguide fed arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
    • H01Q5/28—Arrangements for establishing polarisation or beam width over two or more different wavebands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/378—Combination of fed elements with parasitic elements
    • H01Q5/385—Two or more parasitic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0421—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with a shorting wall or a shorting pin at one end of the element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0464—Annular ring patch

Definitions

  • the invention belongs to the field of electronic devices of wireless communication systems, in particular to a dual-band triple-polarized antenna based on a closed mushroom-shaped unit structure.
  • an antenna with multi-band and diversity characteristics can utilize multiple channels in frequency and polarization in order to reduce multipath effects and increase data transmission rates.
  • a diversity antenna with multiple frequency bands has a more compact structure than a combination of antennas with multiple single frequency bands, so the advantage of its miniaturization is also more popular in the system.
  • each port uses each port to excite its own radiation pattern in a corresponding frequency band, so that different patterns and polarizations can be supported in the two frequency bands.
  • This type of antenna is more suitable for connecting single-band systems with different modes or different polarization requirements, but its diversity characteristics cannot be fully utilized.
  • the present invention provides a dual-band triple-polarized antenna based on a closed mushroom-shaped unit structure.
  • a multi-frequency pattern diversity radiation device with both vertical polarization radiation characteristics and dual horizontal polarization radiation characteristics.
  • the present invention provides a dual-band triple-polarized antenna based on a closed mushroom-shaped unit structure, which is characterized in that it includes a vertically polarized radiator and a horizontally polarized radiator; the horizontally polarized radiation
  • the vertical polarized radiator is located on one side of the vertically polarized radiator, and the two are fixedly connected to form a pie-shaped structure; the vertical polarized radiator and the horizontally polarized radiator are both multi-layer superimposed structures, and the multi-layer superimposed
  • the structure includes several layers of concentric circles; the concentric circles include several dielectric substrates; the vertically polarized radiator and the horizontally polarized radiator respectively include several closed mushroom-shaped cell structures; the closed mushroom-shaped cell structures At least three metal layers and metal short-circuit pins are included; the short-circuit pins connect at least two of the metal layers.
  • the vertically polarized radiator sequentially includes from one side to the other: a top layer patch of the vertically polarized radiator, a parasitic disk patch, an annular patch array, and a metal floor of the lower radiator; it also includes several A circular array of short-circuit pins connecting the annular patch array and the metal floor of the lower radiator; the annular patch array includes 2-5 coaxial annular patches; the annular patch includes several The patch is connected to a plurality of the short-circuit pin structures; the top-layer patch of the vertically polarized radiator is attached to the horizontally polarized radiator.
  • the closed mushroom cell structure of the vertically polarized radiator includes the patch, the shorting pin and the metal floor of the underlying radiator.
  • the horizontally polarized radiator sequentially includes from one side to the other: a top-layer patch of the horizontally polarized radiator, a patch array, and an upper-layer radiator metal floor; and further includes a plurality of circuits connected to the patch array and The short-circuit pin square array of the upper radiator metal floor; the upper radiator metal floor is attached to the vertically polarized radiator.
  • the closed mushroom-shaped cell structure of the horizontally polarized radiator includes the patch, the shorting pin and the upper radiator metal floor.
  • the feeding structure of the vertically polarized radiator includes a vertical body coaxial waveguide port connected to the parasitic disk patch; the coaxial waveguide port is connected to the metal floor of the lower radiator.
  • the feeding structure of the horizontally polarized radiator includes a horizontally polarized coaxial waveguide port and a microstrip strip connected to and loaded by the horizontally polarized coaxial waveguide port;
  • the microstrip strip is located between the horizontally polarized radiator top patch and the array of square patches;
  • the horizontal body coaxial waveguide port is connected to the patch array and the upper radiator metal floor;
  • the horizontally polarized coaxial waveguide ports form an included angle of 90°; and the microstrip strips form an included angle of 90°.
  • one side of the vertically polarized radiator includes two non-metallized vias.
  • the horizontally polarized radiator and the vertically polarized radiator are fixedly connected through a non-metallic fixing device, and a fixing device made of nylon can be selected here, such as but not limited to nylon screws.
  • the patch array is annular or polygonal.
  • the patch array may include several patches; patch arrays of vertically polarized radiators and horizontally polarized radiators may be distinguished by patch arrays of different shapes, such as but not limited to annular or polygonal.
  • the polygons include, but are not limited to, squares, triangles, and hexagons.
  • the horizontally polarized radiator comprises a rectangular radiator structure with symmetry in order to generate dual horizontal polarizations.
  • the vertical body coaxial waveguide port is along the A shorting pin is loaded at the direction, and the shorting pin connects the top circular patch and the lower radiator metal floor.
  • This structure in conjunction with the feed structure of the vertically polarized radiator, serves to adjust the reflectance performance of the radiator.
  • the present invention proposes a dual-band triple-polarized antenna based on a closed mushroom-shaped unit structure.
  • This structure controls the dispersion characteristics of the closed mushroom-shaped cell structure, and then based on this structure, a multi-frequency pattern diversity radiation device can be designed with both vertical polarization radiation characteristics and dual horizontal polarization radiation characteristics in two specified frequency bands.
  • the antenna has a very low profile at a free-space wavelength of 2.4 GHz. This antenna can simultaneously support vertical polarization, y horizontal polarization, and x horizontal polarization radiation characteristics in dual frequency bands, and has good orthogonality of the pattern.
  • the isolation between its ports is higher than 15dB, the radiation efficiency is as high as 94%, the envelope correlation coefficient is less than 0.01, and the two working frequency bands can be controlled independently.
  • the present invention has the advantages of being able to simultaneously support multiple communication modes in dual frequency bands, smaller in size, higher in radiation efficiency, higher in gain, and more in the number of polarizations compared with similar researches. Advantages, it has important prospects in the field of multi-input multi-output communication in the future. specific:
  • the antenna can support both vertical polarization radiation mode and dual horizontal polarization radiation mode (three modes in total) in a dual-band (2.4 and 5.8GHz).
  • the antenna can Each frequency band supports multiple radiation modes, which avoids the disadvantage that the diversity characteristics are not fully utilized due to one port controlling one frequency band.
  • the antenna further supplements the number of polarizations, which can effectively improve the link stability and data transmission rate in a multipath environment, and broaden the signal coverage;
  • the antenna is compact in structure and small in electrical size, and the two radiator structures of the antenna can realize the required working mode by adjusting the dispersion characteristic design of the same closed mushroom-shaped unit structure;
  • This antenna has up to 94% radiation efficiency in two operating frequency bands. In addition, this antenna has good front-to-back ratio, high cross-polarization degree, and low correlation coefficient;
  • This antenna has a good working frequency band independently controllable characteristic. Only by changing two parameters of the antenna structure, the high-frequency or low-frequency operating frequency bands can be independently controllable, and there is a high degree of freedom in adjusting the frequency ratio of high-frequency and low-frequency.
  • Fig. 1 is the structural representation of the present invention.
  • Fig. 1a is the front view of the structure of the present invention
  • Figure 1b is a multi-layer development view of a vertically polarized radiator of the present invention
  • Fig. 1c is a multi-layer development view of the horizontally polarized radiator of the present invention.
  • Fig. 1d is a top view of the annular patch array of the vertically polarized radiator of the present invention
  • Figure 1e is a side view of a vertically polarized radiator of the present invention
  • Fig. 1f is a top view of the top square patch of the horizontally polarized radiator of the present invention
  • 1g is a top view of a patch array of a horizontally polarized radiator of the present invention
  • 1h is a side view of a horizontally polarized radiator of the present invention.
  • Fig. 2 is simulation of the present invention and measured S parameter; Wherein:
  • a is the reflection coefficient of coaxial waveguide port 1
  • b is the mutual coupling coefficient of coaxial waveguide port 1 and coaxial waveguide port 2
  • c is the reflection coefficient of coaxial waveguide port 2
  • d is the coaxial waveguide port 1 and coaxial waveguide port 2.
  • Mutual coupling coefficient of waveguide port 3 e is the reflection coefficient of coaxial waveguide port 3
  • f is the mutual coupling coefficient of coaxial waveguide port 2 and coaxial waveguide port 3;
  • Fig. 3 is the simulation and the measured normalized far-field radiation pattern of the present invention in free space at 2.4GHz;
  • a is the pattern when the coaxial waveguide port 1 is excited
  • b is the pattern when the coaxial waveguide port 2 is excited
  • c is the pattern when the coaxial waveguide port 3 is excited
  • Figure 4 shows the simulated and measured normalized far-field radiation patterns in free space at 5.8 GHz
  • a is the pattern when the coaxial waveguide port 1 is excited
  • b is the pattern when the coaxial waveguide port 2 is excited
  • c is the pattern when the coaxial waveguide port 3 is excited
  • Figure 5 is a graph of gain versus frequency in free space
  • Figure 6 shows the independent adjustment of S-parameters in low and high frequency bands; among them:
  • a is the reflection coefficient of each coaxial waveguide port when the low frequency band is independently adjustable
  • b is the mutual coupling coefficient between each coaxial waveguide port when the low frequency band is independently adjustable
  • c is each coaxial waveguide port when the high frequency band is independently adjustable
  • d is the mutual coupling coefficient between each coaxial waveguide port when the high frequency band is independently adjustable
  • FIG. 7 is a schematic diagram of a closed mushroom-shaped structure
  • Figure 8 is the envelope correlation coefficient between the three ports;
  • a is the envelope correlation coefficient of coaxial waveguide ports 1 and 2
  • b is the envelope correlation coefficient of coaxial waveguide ports 1 and 3
  • c is the envelope correlation coefficient of coaxial waveguide ports 2 and 3.
  • 1-vertically polarized radiator 1a-vertically polarized radiator top patch; 1b-parasitic disc patch; 1c-ring patch array; 1d-shorting pin ring array; 1e-lower radiator metal floor; 1f- Shorting pin connecting the top circular patch and the metal floor of the lower radiator; 1g- Vertical body coaxial waveguide port (ie coaxial waveguide port 1);
  • 2-horizontal polarized radiator ; 2a-horizontal polarized radiator top patch; microstrip strips (2b, 2c) (ie 2b-coaxial waveguide port 2 loaded microstrip strip, 2c-coaxial waveguide port 3 loaded microstrip strip); 2d-patch array; 2e-shorting pin square array; horizontal body coaxial waveguide port (2f, 2g) (ie 2f-coaxial waveguide port 2, 2g-coaxial waveguide port 3 ); 2h - the upper radiator metal floor;
  • r g the radius of the metal floor of the lower radiator;
  • d p the diameter of the parasitic disc patch;
  • l 1 the patch width of three concentric annular patches with different radii;
  • d v the diameter of the shorting pin circular array ;
  • g 1 the gap length of the outermost patch of three concentric annular patches with different radii separated from the edge of the dielectric substrate;
  • g 2 the gap length between the concentric annular patches;
  • d 1 - has Length of inner ring of innermost patch from center of three turns of concentric annular patches of different radii;
  • d f1 coaxial waveguide port 2 on lower radiator metal floor and three turns of concentric annular patches with different radii diameter of the via hole dug at the position;
  • d f2 the diameter of the via hole dug at the position of the coaxial waveguide port 3 on the lower radiator metal floor and three concentric annular patches with different radii;
  • lv connecting the top circular patch and
  • a dual-band triple-polarized antenna based on a closed mushroom-shaped unit structure of the present invention includes a vertically polarized radiator 1 and a horizontally polarized radiator 2, and the horizontally polarized radiator 2 is located vertically Just above the polarized radiator 1, and both are fixed with nylon screws 3.
  • the vertically polarized radiator 1 and the horizontally polarized radiator 2 respectively include several closed mushroom-shaped cell structures as shown in FIG. 7 ; the closed mushroom-shaped cell structures include at least three layers of metal layers and metal short-circuit pins ; The shorting pin connects at least two layers of the metal.
  • the coaxial waveguide port 2 and the coaxial waveguide port 3 of the horizontally polarized radiator 2 pass through the vertically polarized radiator 1, and the top circular patch 1a of the vertically polarized radiator 1 and the upper layer of the horizontally polarized radiator 2
  • the radiator metal floor 2h is electrically connected.
  • the vertically polarized radiator 1 includes a top circular patch 1a in sequence from top to bottom (in this embodiment, the top layer 1a of the vertically polarized radiator selects a circular patch, which is hereinafter referred to as the top circular patch.
  • parasitic disk patch 1b the top layer 1a of the vertically polarized radiator selects a circular patch, which is hereinafter referred to as the top circular patch.
  • parasitic disk patch 1b the top layer 1a of the vertically polarized radiator selects a circular patch, which is hereinafter referred to as the top circular patch.
  • Slice 1a parasitic disk patch 1b
  • annular patch array 1c shorting pin annular array 1
  • the short-circuiting pin circular array 1d is connected to the circular patch array 1c and the lower radiator metal floor 1e.
  • the shaped patch array 1c in this embodiment selects three concentric annular patches with different radii as the annular patch array 1c, which can also be selected, but not limited to 2-5 concentric annular patches with different radii. The specific number is adjusted according to the actual size requirements; you can also choose to form each circle of annular patches by several small patches.
  • the feed structure of the vertically polarized radiator 1 includes a coaxial waveguide port 1 (reference numeral 1g) connected to the parasitic disc patch 1b between the top circular patch 1a and the annular patch array 1c, and The coupling feed is performed at the center of the vertically polarized radiator 1 .
  • the horizontally polarized radiator 2 includes, from top to bottom, a top square patch 2a loaded with a microstrip strip, a microstrip strip 2b loaded by the coaxial waveguide port 2, and a microstrip strip loaded by the coaxial waveguide port 3.
  • 3 ⁇ 3 square patch array 2d (in this embodiment, the patch array 2d selects a 3 ⁇ 3 square patch array, hereinafter referred to as the 3 ⁇ 3 square patch array 2d), the short-circuit pin array 2e, And the upper radiator metal floor 2h.
  • the short-circuit pin array 2e is connected to the 3 ⁇ 3 square patch array 2d and the upper radiator metal floor 2h.
  • the feeding structure of the horizontally polarized radiator 2 includes a microstrip strip 2b loaded by the coaxial waveguide port 2, a microstrip strip 2c loaded by the coaxial waveguide port 3, the coaxial waveguide port 2 (2f), and the same Axial waveguide port 3 (2g).
  • the microstrip strip 2b loaded on the coaxial waveguide port 2 and the microstrip strip 2c loaded on the coaxial waveguide port 3 are respectively coupled and fed with the top square patch 2a loaded with the microstrip strip.
  • the coaxial waveguide port 3 (2g) is formed by rotating the coaxial waveguide port 2 (2f) by 90 degrees around the coordinate axis z-axis.
  • the top patch of the radiator of the vertically polarized radiation mode is designed to be closed.
  • the present invention adopts a closed mushroom-shaped unit structure, and by controlling the dispersion characteristics of the unit, the dispersion characteristics of the unit can satisfy the resonance conditions of vertical polarization and horizontal polarization at 2.4 and 5.8 GHz, respectively, and then respectively. Two antenna structures with different radiation characteristics are formed. Therefore, the present invention can design an antenna with dual-frequency triple-polarization radiation characteristics based on the same unit structure.
  • the dominant radiation pattern is the same as the Component independent transverse magnetic wave mode (TM mode).
  • TM mode Component independent transverse magnetic wave mode
  • the total phase shift constant of the antenna along the ⁇ direction at the two frequency points needs to satisfy the first type of zero
  • the second and third derivative roots of the first-order Bessel function which are 220° and 402°.
  • this work adopts three closed mushroom-shaped unit structures plus a 5mm-long parallel-plate waveguide, and the phase shift constants of the parallel-plate waveguide at two frequency points are 21° and 51°, so the closed mushroom-shaped unit is in the The phase shift constants of the two frequency points need to be designed to be 66° and 117°.
  • this work adopts the center feeding method of the coaxial waveguide port. Due to the mismatch of impedance, a parasitic disc patch is loaded on the top of the coaxial line to generate capacitive coupling, and then a parasitic disc patch is loaded on the top of the coaxial line to generate capacitive coupling. A metal shorting pin connecting the top circular patch and the metal floor of the lower radiator is loaded at a directional distance of about 0.02 ⁇ 0 for inductive tuning.
  • the antenna in order to generate dual horizontal polarizations, the antenna adopts a symmetrical rectangular radiator structure.
  • the total phase shift of the antenna along the x- and y-axis directions needs to be equal to 180°, so for 3 isotropics along the x- and y-axis directions
  • the phase shift constant of each cell needs to be equal to 60°. In this way, using a symmetrical cell structure, a dual-horizontal polarized side-fire radiation mode can be realized in the x-axis direction and the y-axis direction.
  • the coaxial waveguide ports 2 and 3 are in the form of L-shaped probes, that is, two microstrip strips are loaded on the top of the coaxial waveguide feeder, and the microstrip strips are also loaded on the top square patch. , so that the two can produce capacitive coupling effect, and the microstrip strip loaded by the top square patch can also provide inductive effect. After the joint adjustment of the two, the impedance matching of the antenna is significantly improved.
  • the positions of the coaxial waveguide ports 2 and 3 need to be designed on the zero field of the working mode of the vertically polarized radiator.
  • the lower radiator metal floor as the ground for the coaxial waveguide ports 2 and 3 of the horizontally polarized radiator, and then connect the top circular patch to the upper radiator metal floor and connect it to the coaxial waveguide port 1
  • the isolation of coaxial waveguide port 1 and coaxial waveguide ports 2 and 3 can be improved from 10dB to 42dB at 2.4GHz, and from 16 to 20dB at 5.8GHz. At the same time, it also helps to improve the isolation of coaxial waveguide ports 2 and 3, especially from 8dB to 15dB at 5.8GHz.
  • Figure 1a, Figure 1b, Figure 1c, Figure 1d, Figure 1e, Figure 1f and Figure 1g show the top, front and side views of the dual-band triple-polarized antenna based on the closed mushroom-shaped unit structure, and the antenna radius is 0.39 ⁇ 0 , the total thickness is 0.07 ⁇ 0 , and ⁇ 0 is the free-space wavelength of the antenna at 2.4 GHz.
  • the y'-axis is formed by rotating the y-axis around the z-axis counterclockwise by 45°.
  • Figure 2 shows the simulation and measured S-parameters of the dual-band triple-polarized antenna based on the closed mushroom-shaped unit structure; it can be concluded from the results that the antenna operates at 2.4 GHz and 5.8 GHz, and the bandwidths are respectively 2.4 GHz and 5.8 GHz.
  • the vertical polarization omnidirectional radiation mode and the dual horizontal polarization side-fire radiation mode can be shared, and the pairwise isolation of each port in the band is greater than 15dB.
  • Figure 3 shows the simulated and measured normalized far-field radiation patterns of the dual-band triple-polarized antenna based on the closed mushroom-shaped element structure in free space at 2.4 GHz; where a is the excitation coaxial waveguide port The pattern at 1, b is the pattern when the coaxial waveguide port 2 is excited, and c is the pattern when the coaxial waveguide port 3 is excited; from the results, it can be concluded that the simulation results are generally consistent with the measured results.
  • the antenna pattern When the coaxial waveguide port 1 is excited, the antenna pattern is an omnidirectional pattern, and the gain fluctuation in the omnidirectional is only 0.25dB; when the coaxial waveguide ports 2 and 3 are excited respectively, the antenna pattern is a directional pattern, and its The half-power beamwidth is 86° and 80° in the yz and xz planes, respectively.
  • the front-to-back ratio of the measured pattern is greater than 14.5dB, and the degree of cross-polarization is also lower than -16.7dB.
  • Figure 4 shows the simulated and measured normalized far-field radiation patterns of the dual-band triple-polarized antenna based on the closed mushroom-shaped element structure in free space at 5.8 GHz; where a is the excitation coaxial waveguide port The pattern at 1, b is the pattern when the coaxial waveguide port 2 is excited, and c is the pattern when the coaxial waveguide port 3 is excited; from the results, it can be concluded that the simulation results are generally consistent with the measured results.
  • the antenna pattern When the coaxial waveguide port 1 is excited, the antenna pattern is an omnidirectional pattern, and the omnidirectional gain fluctuation is 5dB; when the coaxial waveguide port 2 and 3 are excited respectively, the antenna pattern is a directional pattern, and its half power
  • the beamwidths are 47° and 59° in the yz and xz planes, respectively.
  • the front-to-back ratio of the measured pattern is greater than 14.5dB, and the cross-polarization degree is lower than -13.7dB.
  • Figure 5 shows the gain versus frequency curve of the dual-band triple-polarized antenna based on the closed mushroom-shaped unit structure in free space; it can be seen from the results that the measured gain and the simulated gain are in good agreement.
  • a real gain of 2.3/6.8/6/7dBi can be achieved at low frequencies and a real gain of 6.6/9.0/9.2dBi at high frequencies.
  • the gain fluctuation at high frequency is mainly caused by less than 1% frequency shift of the antenna in the high frequency band, and the current introduced by the coaxial line will also affect the radiation.
  • Figure 6 shows the independent adjustment of the S-parameters of the dual-band triple-polarized antenna based on the closed mushroom-shaped unit structure at low frequency and high frequency; where a is the reflection coefficient when the low frequency is independently adjustable, b is the mutual coupling coefficient when the low frequency band is independently adjustable, c is the reflection coefficient when the high frequency band is independently adjustable, and d is the mutual coupling coefficient when the high frequency band is independently adjustable; scheme 1 is the frequency shift to low frequency, scheme 2 is the frequency band Remaining unchanged, option 3 is to shift the frequency band to high frequencies.
  • the operating frequency band at 2.4GHz can be shifted to a low frequency or a high frequency.
  • the high frequency moves, while the operating frequency band remains unchanged at 5.8GHz.
  • it is adjustable in the frequency band of 2.4GHz or 5.8GHz, it can maintain good port isolation.
  • Figure 8 shows the envelope correlation coefficient of the dual-band triple-polarized antenna based on the closed mushroom-shaped element structure in free space; it can be seen from the figure that the envelope calculated from the simulated port scattering parameters and the simulated three-dimensional pattern
  • the network correlation coefficients are roughly coincident in the working frequency band, because the isolation between the two ports is better and the patterns are orthogonal.
  • the envelope correlation coefficient calculated from the measured port scattering parameters is also lower than 0.01 in the working frequency band, which already meets the channel independence requirement of multiple-input multiple-output antennas.

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Aerials (AREA)

Abstract

本发明公开了一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，包括垂直极化辐射体和水平极化辐射体；两者固定连接呈圆饼状结构；所述垂直极化辐射体和所述水平极化辐射体均为多层叠加的结构，所述多层叠加的结构包括若干层同心圆；所述同心圆包括若干介质基板；所述垂直极化辐射体和所述水平极化辐射体分别包括若干封闭蘑菇状单元结构；所述封闭蘑菇状单元结构包括至少三层的金属层和金属短路针；所述短路针至少连接所述金属层中的两层。该结构通过控制封闭蘑菇状单元结构的色散特性，基于此结构可以设计一个在两个指定频段同时具备垂直极化辐射特性和双水平极化辐射特性的多频方向图分集辐射设备。

Description

一种基于封闭蘑菇状单元结构的双频段三极化天线 技术领域
本发明属于无线通信系统电子器件领域，具体涉及一种基于封闭蘑菇状单元结构的双频段三极化天线。
背景技术
无线通信技术的不断发展以及电子设备高度集成化的快速演进，推动了信息获取手段以及信息交互的多样性，工作在无线局域网的设备随之应运而生。
在现代通信系统中，提高系统的通信容量已然成为无线技术发展的关键。为了提供多功能服务，以及能在复杂的电磁环境中正常的工作，通信系统对于双频段的需求快速增长，这就需要天线也能够同时工作在多频段以满足不同频段的服务。另一方面，具有极化和方向图分集特性的系统可以提供不同的辐射特性，能够保证通信的可靠性。因此，具有多频段和分集特性的天线可以利用在频率和极化上的多个通道，以便于减小多径效应和提高数据传输速率。并且，一个具有多频段的分集天线相比多个单一频段的天线组合具有更紧凑的结构，因此其小型化的优势在系统中也更受欢迎。
对于此类多输入多输出天线，天线之间的端口隔离度，方向图正交性等等将会是此方向研究的重要挑战。最近，有学者提出：
一、用单端口在不同的频段实现不同或相同的极化和方向图。虽然能够在不同频段提供不同的极化和方向图，但是不能支持在每个频段都实现方向图分集。
二、用每个端口在对应的一个频段激励各自的辐射方向图，使得在两个频段能够支持不同的方向图和极化。这类天线更加适合连接不同模式或者不同极化要求的单频段系统，但是其分集特性不能得到充分利用。
三、用每个端口在两个频段同时激励起一种工作模式，这样就能够同时实现极化和方向图的分集特性，然而，已有的此类天线应用受限于极化数量少、剖面高、以及频率比小等不足。
发明内容
发明目的：为了克服现有技术中存在的不足，本发明提供一种基于封闭蘑菇状单元结构的双频段三极化天线，通过控制封闭蘑菇状单元结构的色散特性，设计一个在两个指定频段同时具备垂直极化辐射特性和双水平极化辐射特性的多频方向图分集辐射设备。
技术方案：为实现上述目的，本发明提供一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，包括垂直极化辐射体和水平极化辐射体；所述水平极化辐射体位于所述垂直极化辐射体一侧，两者固定连接呈圆饼状结构；所述垂直极化辐射体和所述水平极化辐射体均为多层叠加的结构，所述多层叠加的结构包括若干层同心圆；所述同心圆包 括若干介质基板；所述所述垂直极化辐射体和所述水平极化辐射体分别包括若干封闭蘑菇状单元结构；所述封闭蘑菇状单元结构包括至少三层的金属层和金属短路针；所述短路针至少连接所述金属中的两层。
作为优选，所述垂直极化辐射体由一侧至另一侧依次包括：垂直极化辐射体顶层贴片、寄生圆盘贴片、环形贴片阵以及下层辐射体的金属地板；还包括若干连接所述环形贴片阵以及所述下层辐射体的金属地板的短路针圆环阵；所述环形贴片阵包括2-5圈同轴环形的贴片；所述环形的贴片包括若干贴片；所述贴片连接若干所述短路针结构；所述垂直极化辐射体顶层贴片贴合所述水平极化辐射体。
可以看出，所述垂直极化辐射体的封闭蘑菇状单元结构包括所述贴片、短路针和下层辐射体的金属地板。
作为优选，所述水平极化辐射体由一侧至另一侧依次包括：水平极化辐射体顶层贴片、贴片阵列以及上层辐射体金属地板；还包括若干电路连接所述贴片阵列以及所述上层辐射体金属地板的短路针方阵；所述上层辐射体金属地板贴合所述垂直极化辐射体。
可以看出，所述水平极化辐射体的封闭蘑菇状单元结构包括所述贴片、短路针和上层辐射体金属地板。
作为优选，所述垂直极化辐射体的馈电结构包括垂直体同轴波导端口连接所述寄生圆盘贴片；所述同轴波导端口连接所述下层辐射体的金属地板。
作为优选，所述水平极化辐射体的馈电结构包括水平极化同轴波导端口以及所述水平极化同轴波导端口连接并加载的微带长条；
所述微带长条位于所述水平极化辐射体顶层贴片和所述方形贴片阵列之间；
所述水平体同轴波导端口连接贴片阵列和上层辐射体金属地板；
所述述水平极化同轴波导端口之间呈90°夹角；且微带长条之间呈90°夹角。
作为优选，所述垂直极化辐射体一侧包括2个非金属化过孔。
作为优选，所述水平极化辐射体和所述垂直极化辐射体通过非金属固定装置固定连接，这里可以选用尼龙材质的固定装置，例如但不仅限于尼龙螺丝。
作为优选，所述贴片阵列为环形或多边形。该贴片阵列可包括若干贴片；垂直极化辐射体和水平极化辐射体的贴片阵列可以用不同形状的贴片阵列进行区分，例如但不仅限于环形或多边形。所述多边形包括但不仅限于方形、三角形、六边形。
作为优选，所述水平极化辐射体包括具有对称性的矩形辐射体结构，以便为了产生双水平极化。
作为优选，垂直体同轴波导端口沿
Figure PCTCN2021071183-appb-000001
方向处加载短路针，所述短路针连接顶层圆形贴片和下层辐射体金属地板。该结构与所述垂直极化辐射体的馈电结构两者联合，用于调节辐射体的反射系数性能。
有益效果：本发明提出了一种基于封闭蘑菇状单元结构的双频段三极化天线。该结构通过控制封闭蘑菇状单元结构的色散特性，然后基于此结构可以设计一个在两个指定频段 同时具备垂直极化辐射特性和双水平极化辐射特性的多频方向图分集辐射设备。天线在2.4GHz的自由空间波长，剖面非常低。此天线能够在双频段同时支持垂直极化、y水平极化、以及x水平极化的辐射特性，具有很好的方向图正交性。其端口之间的隔离度都高于15dB，辐射效率高达94％，包络相关系数小于0.01，且两个工作频段可以独立控制。相比于已有的多频段多极化天线，本发明具有能够在双频带内同时支持多种通信模式，与同类研究相比尺寸更小，辐射效率高，增益高，以及极化数多等优点，在未来多输入多输出通信领域有着重要前景。具体：
1)能在一个双频段内(2.4和5.8GHz)同时支持垂直极化辐射模式和双水平极化辐射模式(共三个模式)，与之前的双频段多模式天线相比，该天线可以在每一个频段支持多种辐射模式，避免了因一个端口控制一个频段而带来的分集特性不被充分利用等劣势。并且，相比现有天线，该天线进一步补充了极化数量，可以有效提高多径环境中的链路稳定性、数据传输速率，并拓宽信号覆盖范围；
2)此天线结构紧凑，电尺寸较小，该天线的两个辐射体结构可以通过调整同一种封闭蘑菇状单元结构的色散特性设计实现所需的工作模式；
3)此天线在两个工作频带内具有高达94％的辐射效率。另外，此天线有很好的前后比、较高的交叉极化度、以及很低的相关系数；
4)此天线具有很好的工作频段独立可控特性。仅通过改变天线结构的两个参数，可以实现高频或者低频工作频带独立可控，在调整高频和低频的频率比方面具有很高的自由度。
附图说明
图1为本发明结构示意图；其中：
图1a为本发明结构的正视图，
图1b为本发明垂直极化辐射体的多层展开图，
图1c为本发明水平极化辐射体的多层展开图，
图1d为本发明垂直极化辐射体的环形贴片阵的俯视图，
图1e为本发明垂直极化辐射体的侧视图，
图1f为本发明水平极化辐射体的顶层方形贴片的俯视图，
图1g为本发明水平极化辐射体的贴片阵列的俯视图，
图1h为本发明水平极化辐射体的侧视图；
图2为本发明仿真和实测S参数；其中：
a是同轴波导端口1的反射系数，b是同轴波导端口1和同轴波导端口2的互耦系数，c是同轴波导端口2的反射系数，d是同轴波导端口1和同轴波导端口3的互耦系数，e是同轴波导端口3的反射系数，f是同轴波导端口2和同轴波导端口3的互耦系数；
图3为本发明在2.4GHz时自由空间中的仿真和实测归一化远场辐射方向图；其中
a是激励同轴波导端口1时的方向图，b是激励同轴波导端口2时的方向图，c是激励同轴波导端口3时的方向图；
图4为在5.8GHz时自由空间中的仿真和实测归一化远场辐射方向图；其中
a是激励同轴波导端口1时的方向图，b是激励同轴波导端口2时的方向图，c是激励同轴波导端口3时的方向图；
图5为在自由空间中的增益随频率变化曲线；
图6为S参数在低频和高频段的独立可调；其中：
a是低频段独立可调时各个同轴波导端口的反射系数，b是低频段独立可调时各个同轴波导端口之间的互耦系数，c是高频段独立可调时各个同轴波导端口的反射系数，d是高频段独立可调时各个同轴波导端口之间的互耦系数；方案1是频段向低频偏移，方案2是频段保持不变，方案3是频段向高频偏移；
图7为封闭蘑菇状结构示意图；
图8为三个端口之间的包络相关系数；其中：
a是同轴波导端口1和2的包络相关系数，b是同轴波导端口1和3的包络相关系数，c是同轴波导端口2和3的包络相关系数。
图中有：
1-垂直极化辐射体；1a-垂直极化辐射体顶层贴片；1b-寄生圆盘贴片；1c-环形贴片阵；1d-短路针圆环阵；1e-下层辐射体金属地板；1f-连接顶层圆形贴片和下层辐射体金属地板的短路针；1g-垂直体同轴波导端口(即同轴波导端口1)；
2-水平极化辐射体；2a-水平极化辐射体顶层贴片；微带长条(2b、2c)(即2b-同轴波导端口2加载的微带长条，2c-同轴波导端口3加载的微带长条)；2d-贴片阵列；2e-短路针方阵；水平体同轴波导端口(2f，2g)(即2f-同轴波导端口2，2g-同轴波导端口3)；2h-上层辐射体金属地板；
3-尼龙螺丝；
r g-下层辐射体金属地板的半径；d p-寄生圆盘贴片的直径；l 1-具有不同半径的三圈同心环形贴片的贴片宽度；d v-短路针圆环阵的直径；g 1-具有不同半径的三圈同心环形贴片的最外层贴片的外环与介质基板边缘相隔的缝隙长度；g 2-同心环形贴片之间相隔的缝隙长度；d 1-具有不同半径的三圈同心环形贴片的最内层贴片的内环相距中心的长度；d f1-在下层辐射体金属地板和具有不同半径的三圈同心环形贴片上同轴波导端口2的位置挖的过孔直径；d f2-在下层辐射体金属地板和具有不同半径的三圈同心环形贴片上同轴波导端口3的位置挖的过孔直径；l v-连接顶层圆形贴片和下层辐射体金属地板的短路针距离中心原点的长度；r v-连接顶层圆形贴片和下层辐射体金属地板的短路针的直径；w s-水平极化辐射体的顶层方形贴片的边长；w c1-顶层方形贴片剪去的切角长度；l f-顶层方形贴片加载一对正交的微带长条的长度；w f-顶层方形贴片加载一对正交的微带长条的宽度；w u-3×3方形贴片阵列的方形贴片边长；d h-短路针方阵的直径；w c2-3×3方形贴片阵列剪去的切角长度； w g-3×3方形贴片阵列的方形贴片之间的缝隙长度；l p-同轴波导端口2和3加载的微带长条的长度；w p-同轴波导端口2和3加载的微带长条的宽度；d 2-同轴波导端口2和3加载的微带长条内端距离中心的长度；d s-螺丝孔的直径；
h 1-基于封闭蘑菇状单元结构的双频段三极化天线最下层介质基板厚度；h 2-基于封闭蘑菇状单元结构的双频段三极化天线倒数第2层介质基板厚度；h 3-基于封闭蘑菇状单元结构的双频段三极化天线倒数第3层介质基板厚度；h 4-基于封闭蘑菇状单元结构的双频段三极化天线倒数第4层介质基板厚度；h 5-基于封闭蘑菇状单元结构的双频段三极化天线倒数第5层介质基板厚度；h 6-基于封闭蘑菇状单元结构的双频段三极化天线倒数第6层介质基板厚度；h 7-基于封闭蘑菇状单元结构的双频段三极化天线倒数第7层介质基板厚度；h 8-基于封闭蘑菇状单元结构的双频段三极化天线最顶层介质基板厚度；
具体实施方式
下面结合附图对本发明作更进一步的说明。
如图1所示，本发明的一种基于封闭蘑菇状单元结构的双频段三极化天线，包括一个垂直极化辐射体1和一个水平极化辐射体2，水平极化辐射体2位于垂直极化辐射体1的正上方，并且两者用尼龙螺丝3固定。所述垂直极化辐射体1和所述水平极化辐射体2分别包括若干如图7所示的封闭蘑菇状单元结构；所述封闭蘑菇状单元结构包括至少三层的金属层和金属短路针；所述短路针至少连接所述金属中的两层。
水平极化辐射体2的同轴波导端口2和同轴波导端口3穿过垂直极化辐射体1，并且垂直极化辐射体1的顶层圆形贴片1a与水平极化辐射体2的上层辐射体金属地板2h电相连。所述垂直极化辐射体1从上到下依次包括顶层圆形贴片1a(本实施例中，垂直极化辐射体顶层贴片1a选择圆形贴片，以下均称其为顶层圆形贴片1a)、寄生圆盘贴片1b、环形贴片阵1c、短路针圆环阵1d、以及下层辐射体金属地板1e。
其中，短路针圆环阵1d与环形贴片阵1c以及下层辐射体金属地板1e相连。本实施例的形贴片阵1c选择不同半径的三圈同心圆环形贴片作为环形贴片阵1c，同样可以选择，但不仅限于2-5圈不同半径的同心环形贴片，贴片的具体数量根据实际尺寸需求进行调节；也可以选择由若干小贴片组成每一圈环形贴片。
所述垂直极化辐射体1的馈电结构包括同轴波导端口1(附图标记1g)连接着位于顶层圆形贴片1a和环形贴片阵1c之间的寄生圆盘贴片1b，并处于垂直极化辐射体1的中心进行耦合馈电。所述水平极化辐射体2从上到下依次包括加载微带长条的顶层方形贴片2a、同轴波导端口2加载的微带长条2b、同轴波导端口3加载的微带长条2c、3×3方形贴片阵列2d(本实施例中，贴片阵列2d选择3×3方形贴片阵列，以下均称其为3×3方形贴片阵列2d)、短路针方阵2e、以及上层辐射体金属地板2h。
其中，短路针方阵2e与3×3方形贴片阵列2d和上层辐射体金属地板2h相连。所述水平极化辐射体2的馈电结构包括同轴波导端口2加载的微带长条2b、同轴波导端口3加载的微带长条2c、同轴波导端口2(2f)、以及同轴波导端口3(2g)。同轴波导端口2 加载的微带长条2b和同轴波导端口3加载的微带长条2c分别与加载微带长条的顶层方形贴片2a进行耦合馈电。同轴波导端口3(2g)由同轴波导端口2(2f)绕坐标轴z轴旋转90度而成。
本实施例中，为了实现双频多模式的辐射特性，以及考虑到具有水平极化辐射模式的辐射体需要在具有垂直极化辐射模式的辐射体上方的特点，为了在两个辐射体的结构设计紧凑的前提下，将垂直极化辐射模式的辐射体的顶层贴片做封闭设计。
为了实现上述设计要求，本发明采取封闭的蘑菇状单元结构，通过控制单元的色散特性，使得单元的色散特性能够分别满足在2.4和5.8GHz实现垂直极化和水平极化的谐振条件，然后分别组成两种具有不同辐射特性的天线结构。因此，本发明基于同一个单元结构就可以设计具有双频三极化辐射特性的天线。
在垂直极化辐射体的设计中，为了产生垂直极化的全向辐射模式，对于较薄厚度的圆形贴片结构，主要的辐射模式是与
Figure PCTCN2021071183-appb-000002
分量无关的横磁波模式(TM模式)。为了在2.4GHz激励TM 02模式、在5.8GHz激励TM 03模式进而实现双频垂直极化的全向辐射模式，天线在两个频率点沿着ρ方向的总相移常数需要满足第一类零阶贝塞尔函数的第2个和第3个导数根，也就是220°和402°。在ρ方向上，本工作采取3个封闭蘑菇状单元结构加一段5mm长的平行板波导，而平行板波导在两个频点的相移常数为21°和51°，因此封闭蘑菇状单元在两个频率点的相移常数需要设计为66°和117°。对于天线馈电结构，本工作采用同轴波导端口中心馈电的方式，由于阻抗不匹配，因此在同轴线顶端加载寄生圆盘贴片进而产生容性耦合的作用，然后再在端口沿
Figure PCTCN2021071183-appb-000003
方向距离约0.02λ 0处加载一根连接顶层圆形贴片与下层辐射体金属地板的金属短路针进行感性调谐。
在水平极化辐射体的设计中，为了产生双水平极化，本天线采用具有对称性的矩形辐射体结构。为了在矩形腔体内构造TM 01和TM 10模式，天线沿着x轴和y轴方向的总相移需要等于180°，因此对于沿着x轴方向和y轴方向的3个具有各向同性的封闭蘑菇状单元结构来说，每个单元的相移常数需要等于60°。这样利用一个对称的单元结构，就可以在x轴方向和y轴方向实现双水平极化的边射辐射模式。对于天线的馈电方式，同轴波导端口2和3采用L型探针的形式，即在同轴波导馈电线顶端加载两根微带长条，并在顶层方形贴片也加载微带长条，这样两者可以产生容性耦合作用，顶层方形贴片加载的微带长条也可以提供感性作用，经过对两者的联合调整，天线的阻抗匹配具有显著的提升。
对于同轴波导端口1和同轴波导端口2、3的隔离度的改善，可以从两个方面进行设计。一方面，同轴波导端口2和3的位置需要设计在垂直极化辐射体的工作模式的零场上。另一方面，将下层辐射体金属地板作为水平极化辐射体的同轴波导端口2和3的地，然后将顶层圆形贴片与上层辐射体金属地板电连接，与同轴波导端口1的地分离开来，能够将同轴波导端口1和同轴波导端口2、3的隔离度在2.4GHz从10dB提高到42dB，在5.8GHz从16提高到20dB。同时对于同轴波导端口2和3的隔离度提高也有帮助，尤其是在5.8GHz从8dB提高了到15dB。
对于同轴波导端口2和3的隔离度改善，在顶层方形贴片和3×3方形贴片阵列上加载四周的切角，能够将在5.8GHz时的端口隔离度从8.7dB提高到15dB，而在2.4GHz时的端口隔离度是从26dB降到了15.5dB。显然，在两个频率的端口隔离度已经能够满足多输入多输出天线对于隔离度的要求了。通过在顶层方形贴片和3×3方形贴片阵列加载切角的方法提高端口隔离度，可以得益于两个原因。第一，在没有加载切角时，天线的谐振频率低于5.8GHz，因此导致在5.8GHz时互耦系数较高。随着两层贴片切角，由于辐射体尺寸的变小，工作频段将向更高的频率移动，这样的移动将会导致互耦系数也向高频移动，从而降低了在工作频段内的互耦系数。其次，当端口2被激活时，在顶层方形贴片上可以发现沿着x轴方向的流动的电流较强，干扰了沿着y轴方向的主极化电流。在切角加载之后，沿着x轴方向的电流明显变弱，因此对y轴方向的电流作用就大大减少了。
图1a、图1b、图1c、图1d、图1e、图1f和图1g给出了所述基于封闭蘑菇状单元结构的双频段三极化天线的俯视，正视以及侧视示意图，天线半径为0.39λ 0，总厚度为0.07λ 0，λ 0为天线在2.4GHz时的自由空间波长。其中，y’轴是将y轴绕z轴逆时针旋转45°而成。
图2给出了所述一种基于封闭蘑菇状单元结构的双频段三极化天线的仿真和实测S参数；从结果可以得出，该天线在工作频点为2.4GHz和5.8GHz，带宽分别为35MHz和85MHz，可以实现垂直极化的全向辐射模式和双水平极化的边射辐射模式的共享，并且在带内每个端口两两隔离度均大于15dB。
图3给出了所述一种基于封闭蘑菇状单元结构的双频段三极化天线在2.4GHz时自由空间中的仿真和实测归一化远场辐射方向图；其中a是激励同轴波导端口1时的方向图，b是激励同轴波导端口2时的方向图，c是激励同轴波导端口3时的方向图；从结果可以得出，仿真结果和实测结果大体一致。当同轴波导端口1激励时，天线方向图为全向方向图，全向的增益波动仅为0.25dB；当同轴波导端口2和3分别激励时，天线方向图均为定向方向图，其半功率波束宽度在yz和xz面上分别为86°和80°。实测方向图的前后比大于14.5dB，并且交叉极化度也低于-16.7dB。
图4给出了所述一种基于封闭蘑菇状单元结构的双频段三极化天线在5.8GHz时自由空间中的仿真和实测归一化远场辐射方向图；其中a是激励同轴波导端口1时的方向图，b是激励同轴波导端口2时的方向图，c是激励同轴波导端口3时的方向图；从结果可以得出，仿真结果和实测结果大体一致。当同轴波导端口1激励时，天线方向图为全向方向图，全向的增益波动为5dB；当同轴波导端口2和3分别激励时，天线方向图均为定向方向图，其半功率波束宽度在yz和xz面上分别为47°和59°。实测方向图的前后比大于14.5dB，并且交叉极化度低于-13.7dB。
图5给出了所述一种基于封闭蘑菇状单元结构的双频段三极化天线在自由空间中的增益随频率变化曲线；由结果可知，实测增益和仿真增益保持很好的一致性。当同轴波导端口1、2和3分别激励时，在低频可以实现2.3/6.8/6/7dBi的实际增益，在高频可以实现6.6/9.0/9.2dBi的实际增益。高频时的增益波动主要是由于天线在高频段的不到1％的频移 引起，另外同轴线引入的电流也会对辐射有影响。
图6给出了所述一种基于封闭蘑菇状单元结构的双频段三极化天线的S参数在低频和高频段的独立可调；其中，a是低频段独立可调时的反射系数，b是低频段独立可调时的互耦系数，c是高频段独立可调时的反射系数，d是高频段独立可调时的互耦系数；方案1是频段向低频偏移，方案2是频段保持不变，方案3是频段向高频偏移。当改变连接短路针圆环阵1e或者短路针方阵2e的直径，在5.8GHz的工作频段可以产生向低频或者向高频的移动，而在2.4GHz时的工作频段保持不变。当联合改变连接短路针圆环阵或者短路针方阵的直径，和环形贴片阵1c的贴片宽度或者方阵的方形贴片边长，可以使得在2.4GHz时的工作频段向低频或者向高频移动，而保持在5.8GHz时的工作频段不变。并且，不管是在2.4GHz还是5.8GHz的频段可调，均能保持较好的端口隔离度。
图8给出了所述基于封闭蘑菇状单元结构的双频段三极化天线在自由空间的包络相关系数；由图可知，由仿真的端口散射参数和仿真的三维方向图所计算出的包络相关系数在工作频段内大致重合，这是因为两两端口隔离度较好以及方向图正交。由实测端口散射参数所计算出的包络相关系数在工作频段内也低于0.01，这已经满足多入多出天线对于信道独立的要求。
以上所述仅是本发明的优选实施方式，应当指出：对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，包括垂直极化辐射体(1)和水平极化辐射体(2)；所述水平极化辐射体(2)位于所述垂直极化辐射体(1)一侧，两者固定连接呈圆饼状结构；所述垂直极化辐射体(1)和所述水平极化辐射体(2)均为多层叠加的结构，所述多层叠加的结构包括若干层同心圆；所述同心圆包括若干介质基板；
    所述垂直极化辐射体(1)和所述水平极化辐射体(2)分别包括若干封闭蘑菇状单元结构；所述封闭蘑菇状单元结构包括至少三层的金属层和金属短路针；
    所述短路针至少连接所述金属中的两层。
  2. 如权利要求1所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述垂直极化辐射体(1)由一侧至另一侧依次包括：垂直极化辐射体顶层贴片(1a)、寄生圆盘贴片(1b)、环形贴片阵(1c)以及下层辐射体的金属地板(1e)；还包括若干连接所述环形贴片阵(1c)以及所述下层辐射体的金属地板(1e)的短路针圆环阵(1d)；
    所述环形贴片阵(1c)包括2-5圈同轴环形的贴片；所述环形的贴片包括若干贴片；
    所述短路针圆环阵(1d)包括若干短路针结构；
    所述贴片连接若干所述短路针结构；
    所述垂直极化辐射体顶层贴片(1a)贴合所述水平极化辐射体(2)。
  3. 如权利要求1所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述水平极化辐射体(2)由一侧至另一侧依次包括：水平极化辐射体顶层贴片(2a)、贴片阵列(2d)以及上层辐射体金属地板(2h)；还包括若干电路连接所述贴片阵列(2d)以及所述上层辐射体金属地板(2h)的短路针方阵(2e)；
    所述贴片阵列包括若干贴片；
    所述上层辐射体金属地板(2h)贴合所述垂直极化辐射体(1)。
  4. 如权利要求2所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述垂直极化辐射体(1)的馈电结构包括垂直体同轴波导端口(1g)连接所述寄生圆盘贴片(1b)；
    所述同轴波导端口(1g)连接所述下层辐射体的金属地板(1e)。
  5. 如权利要求3所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述水平极化辐射体(2)的馈电结构包括水平极化同轴波导端口(2f，2g)以及所述水平极化同轴波导端口(2f，2g)连接并加载的微带长条(2b、2c)；
    所述微带长条(2b、2c)位于所述水平极化辐射体顶层贴片(2a)和所述贴片阵列(2d)之间；
    所述水平体同轴波导端口(2f，2g)连接贴片阵列(2d)和上层辐射体金属地板(2h)；
    所述述水平极化同轴波导端口(2f，2g)之间呈90°夹角；且微带长条(2b、2c) 呈90°夹角。
  6. 如权利要求1所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述述垂直极化辐射体(1)一侧包括2个非金属化过孔。
  7. 如权利要求1所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述水平极化辐射体(2)和所述垂直极化辐射体(1)通过非金属固定装置固定连接。
  8. 如权利要求3所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述贴片阵列(2d)为环形或多边形。
  9. 如权利要求1所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述水平极化辐射体(2)包括具有对称性的矩形辐射体结构。
  10. 如权利要求4所述的一种基于封闭蘑菇状单元结构的双频段三极化天线，其特征在于，所述垂直体同轴波导端口(1g)沿
    Figure PCTCN2021071183-appb-100001
    方向处加载短路针(1f)，所述短路针(1f)连接垂直极化辐射体顶层贴片(1a)和下层辐射体金属地板(1e)。
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