WO2022064698A1 - Method for manufacturing electronic component module, method for manufacturing electronic circuit board, and method for manufacturing component built-in board - Google Patents

Method for manufacturing electronic component module, method for manufacturing electronic circuit board, and method for manufacturing component built-in board Download PDF

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Publication number
WO2022064698A1
WO2022064698A1 PCT/JP2020/036645 JP2020036645W WO2022064698A1 WO 2022064698 A1 WO2022064698 A1 WO 2022064698A1 JP 2020036645 W JP2020036645 W JP 2020036645W WO 2022064698 A1 WO2022064698 A1 WO 2022064698A1
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WIPO (PCT)
Prior art keywords
electronic component
manufacturing
pitch
terminal
forming
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PCT/JP2020/036645
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French (fr)
Japanese (ja)
Inventor
剛士 玉置
Original Assignee
昭和電工マテリアルズ株式会社
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Priority to PCT/JP2020/036645 priority Critical patent/WO2022064698A1/en
Publication of WO2022064698A1 publication Critical patent/WO2022064698A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits

Definitions

  • the present invention relates to a method for manufacturing an electronic component module, a method for manufacturing an electronic circuit board, and a method for manufacturing a board with built-in components.
  • Patent Document 1 discloses a method of using cream-like solder for connecting an electronic component and a printed wiring board.
  • an object of the present invention is to provide a method for reducing poor connection of electronic components to a wiring board.
  • the present invention relates to a method for manufacturing an electronic component module as one aspect.
  • the method for manufacturing this electronic component module is a step of forming a component sealing member in which a first electronic component and a second electronic component of a different type from the first electronic component are sealed and integrated with a protective material.
  • a step of forming a component sealing member so that the first connection terminal of an electronic component and a second connection terminal of a second electronic component are exposed from the component sealing member, and a first connection exposed from the component sealing member.
  • a second terminal pitch that is electrically connected to the terminal and the second connection terminal on the first surface side, and the first terminal pitch between the first connection terminals is different from the first terminal pitch on the second surface side opposite to the first surface.
  • a step of forming a pitch conversion layer having a wiring structure for converting to a two-terminal pitch and electrically connecting the first connection terminal to a third connection terminal arranged at the second terminal pitch is provided.
  • the module is first assembled as an electronic component module including the electronic component, and the module is mounted on the wiring board. ..
  • an electronic component for example, an electronic component with a narrow terminal pitch
  • the module is first assembled as an electronic component module including the electronic component, and the module is mounted on the wiring board. ..
  • at least two or more types of electronic components are integrated as a component encapsulation member by a protective material, and the connection terminals of the electronic components exposed from the component encapsulation member are connected to the wiring board.
  • the pitch conversion layer converts the terminal pitch (second terminal pitch) suitable for connection.
  • the connection pitch of the electronic component is likely to cause a connection failure when connecting to the wiring board (for example, narrow pitch)
  • the connection pitch that makes it easy to connect to the wiring board in the pitch conversion layer by modularization. It is possible to reduce the connection failure of the electronic component to the wiring board by converting to.
  • this modularization method since at least two types of electronic components to be mounted on the wiring board are included in the modularization, a wide modularization area can be taken, and a third used for connection to the wiring board can be taken. It is possible to flexibly design the second terminal pitch of the connection terminal and further reduce the connection failure to the wiring board.
  • the wiring structure and the third connection terminal may be formed so that the second terminal pitch is wider than the first terminal pitch.
  • the terminal pitch of the third connection terminal can be made wider than the terminal pitch of the first electronic component, so that when the electronic component module is mounted on the wiring board. , It is possible to further reduce the connection failure of electronic parts.
  • the first electronic component is a semiconductor package, and in the step of forming the pitch conversion layer, at least a part of the terminals of the first connection terminal is connected to the third connection terminal via the second electronic component.
  • the wiring structure may be formed as described above.
  • the wiring structure of the pitch conversion layer is formed by more efficiently utilizing the installation areas of the first electronic component and the second electronic component in the pitch conversion layer, and the third connection terminal more suitable for connection to the wiring board.
  • the second terminal pitch of can be designed. As a result, when the electronic component module is mounted on the wiring board, it is possible to further reduce the connection failure of the electronic component.
  • the first electronic component may be a semiconductor package, and the width of the first terminal pitch of the semiconductor package may be 500 ⁇ m or less. In this way, even when a small semiconductor package or a semiconductor package having a large number of wiring drawers is used, by modularizing it, when the electronic component module is mounted on the wiring board, the connection failure of the electronic component is further improved. It can be further reduced.
  • the width of the second terminal pitch of the third connection terminal may be 1000 ⁇ m or more. In this case, since the connection pitch of the third connection terminal can be widened, it is possible to further reduce the connection failure of the electronic component when the electronic component module is mounted on the wiring board.
  • the wiring structure of the pitch conversion layer makes full use of the installation area of many electronic components having different terminal pitches or terminal densities (total surface area of the connecting terminals relative to the planar area for mounting each electronic component). Can be freely designed, and a more efficient pitch conversion wiring structure can be obtained. As a result, when the electronic component module is mounted on the wiring board, it is possible to further reduce the connection failure of the electronic component.
  • all or part of the functions of the semiconductor integrated circuit can be combined with electronic components such as passive elements composed of chip components (first electronic component, second electronic component, and a large number of electrons). It is also possible to reassemble the components) to form a circuit, simplify the wiring of the semiconductor integrated circuit used, or stop the use of the semiconductor integrated circuit, and manufacture an electronic circuit component that further suppresses connection failure.
  • the second electronic component may be a passive component.
  • the wiring structure of the pitch conversion layer is designed by effectively utilizing the installation area in the pitch conversion layer of the passive component whose terminal pitch (or terminal density) is generally wider (or coarser) than that of the semiconductor package. be able to.
  • the second electronic component may include at least one of a chip capacitor having a length of 1.0 mm or less and a width of 0.5 mm or less and a chip resistor, and having a length of 0.2 mm or less and a width of 0. It may include at least one of a chip capacitor of 1 mm or less and a chip resistor.
  • the step of forming the component sealing member includes a step of attaching the first electronic component and the second electronic component to the support, and in the step of forming the component sealing member, the first electronic component and the second electronic component are arranged on the support. It may be sealed with a protective material so as to cover the 1st electronic component and the 2nd electronic component.
  • the step of forming the component sealing member includes a step of forming the protective material on the support, and in the step of forming the component sealing member, the first connection terminal and the second connection terminal are exposed from the protective material.
  • the first electronic component and the second electronic component may be embedded in a protective material to form a component sealing member. In any of the above cases, it is possible to easily form a component sealing member in which the first electronic component and the second electronic component are integrated with a protective material.
  • the wiring structure in the step of forming the pitch conversion layer, is formed so that a part of the wiring structure is located in the outer region of the installation area of the first electronic component when viewed from the direction orthogonal to the pitch conversion layer. You may. Further, in the step of forming the pitch conversion layer, the wiring structure may be formed so that a part of the wiring structure overlaps with the second electronic component when viewed from a direction orthogonal to the pitch conversion layer. In any of the above cases, the wiring structure can be designed more flexibly, and the second terminal pitch of the third connection terminal suitable for connecting to the wiring board can be easily designed.
  • the protective material may include a flexible material or a material having electromagnetic wave shielding properties.
  • the protective material contains a flexible material
  • the manufactured electronic component module can have a flexible configuration, and can also have a bendable configuration depending on the degree of flexibility.
  • the protective material contains a material having an electromagnetic wave shielding property, it is possible to easily impart electromagnetic wave shielding performance to the electronic component module.
  • the protective material contains both materials, each function can be achieved.
  • the first connection terminal in the step of forming the pitch conversion layer, may be electrically connected to the wiring structure by plating on the first surface side.
  • the pitch of the first connection terminal is often narrow, but by making the electrical connection between the first connection terminal and the wiring structure by plating instead of soldering, fine connection between the two can be performed more reliably. It becomes possible to do.
  • the above manufacturing method may further include a step of installing the heat radiating member on a surface other than the surface on which the first connection terminal of the component sealing member is exposed.
  • the heat dissipation function can be imparted to the electronic component module, and even if the first electronic component is a semiconductor package (for example, LSI) in which heat is likely to be generated, heat can be efficiently dissipated. Further, since heat can be dissipated efficiently, it is possible to use an inexpensive material having not so high heat resistance as a protective material for sealing the first electronic component or the like.
  • the method for manufacturing an electronic circuit board includes a step of preparing an electronic component module and a wiring board manufactured by the manufacturing method having any of the above aspects, and a pitch conversion layer in the electronic component module.
  • a step of mounting the electronic component module on the wiring board is provided so that the third connection terminal is connected to the corresponding connection terminal on the wiring board.
  • it is modularized to include electronic components, and the terminal pitch of the third connection terminal connected to the wiring board can be optimized in the module. It is possible to reduce the connection failure of.
  • the wiring board may be a one-layer or two-layer board.
  • the wiring board is made into multiple layers (for example, 4 layers or 5 layers or more) in order to cope with a high density of connection terminals of the semiconductor package. Wiring has been used to prevent poor connections.
  • the wiring structure of the pitch conversion layer including a region having a low mounting density (for example, an installation region of a second electronic component) as in the above-mentioned method for manufacturing an electronic component module. Even if the number of laminated wiring boards is reduced, poor connection on the wiring boards can be reduced. That is, according to the method for manufacturing an electronic circuit board according to one aspect of the present invention, it is possible to make the wiring board as thin as one layer or two layers.
  • the method for manufacturing a component-embedded substrate according to a further aspect of the present invention includes a step of preparing an electronic component module manufactured by a manufacturing method having any of the above aspects, and a third electron on the second surface of the pitch conversion layer. It comprises a step of providing at least one of a component and a connector. Even in the case of such a board with built-in components, it is possible to reduce connection defects.
  • FIG. 1 is a cross-sectional view showing an electronic component module according to an embodiment of the present invention.
  • 2 (a) to 2 (e) are views showing a part of the method of manufacturing the electronic component module shown in FIG. 1 (method of manufacturing the component encapsulation member).
  • 3 (a) to 3 (c) are views showing a method for manufacturing an electronic component module and an electronic circuit board shown in FIG. 1, which are performed after the process of FIG. 2.
  • 4 (a) to 4 (d) are diagrams showing another method for manufacturing the electronic component module and the electronic circuit board shown in FIG. 1, which are performed after the process of FIG. 2.
  • 5 (a) to 5 (e) are diagrams showing a part (method of manufacturing a component sealing member) of still another method for manufacturing the electronic component module shown in FIG. 1.
  • FIG. 1 is a cross-sectional view showing an electronic component module according to an embodiment of the present invention.
  • 2 (a) to 2 (e) are views showing a part of the method of manufacturing the electronic component module shown in FIG.
  • FIG. 6A is a cross-sectional view showing an example of an electronic component module provided with a heat sink
  • FIG. 6B is a cross-sectional view showing another example of the electronic component module provided with a heat sink.
  • 7 (a) and 7 (b) are cross-sectional views showing a modified example of the electronic component module.
  • FIG. 8 is a cross-sectional view showing a component-embedded substrate according to an embodiment of the present invention.
  • FIG. 9 is a cross-sectional view showing the configuration of a comparative example in which electronic components are directly mounted on a wiring board.
  • FIG. 1 is a cross-sectional view schematically showing an example of an electronic component module manufactured by the manufacturing method according to the present embodiment. As shown in FIG. 1, the electronic component module 1 includes a component sealing member 10 and a pitch conversion layer 20.
  • the component sealing member 10 includes a semiconductor package 11 (first electronic component), electronic components 12 and 13 (second electronic component), and a sealing portion 14.
  • the component sealing member 10 is a member in which a plurality or a large number of electronic components are collectively sealed with a protective material and integrated.
  • the component sealing member 10 is a rectangular parallelepiped or plate-shaped member having a lower surface 10a facing the pitch conversion layer 20 and an upper surface 10b on the opposite side of the lower surface 10a, and has predetermined rigidity.
  • the semiconductor package 11 is an electronic component in which a semiconductor bare chip is sealed with a sealing material and a large number of connection terminals 11a (first connection terminals) are provided below.
  • the number of connection terminals 11a installed is, for example, 50 pins or more, and 100 pins or 400 pins as an example.
  • the terminal pitch P1 (first terminal pitch) of the connection terminal 11a is, for example, 500 ⁇ m or less, for example, 500 ⁇ m, 150 ⁇ m, or 50 ⁇ m.
  • the terminal pitch P1 is the distance between the centers of adjacent connection terminals 11a.
  • Electronic components 12 and 13 are passive components such as chip capacitors or chip resistors.
  • the electronic components 12 and 13 have a substantially rectangular parallelepiped shape, and have a pair of connection terminals 12a and a pair of connection terminals 13a (second connection terminals) at both ends thereof.
  • the electronic components 12 and 13 are chip components such as a chip capacitor and a chip resistor having a length of 1.0 mm or less and a width of 0.5 mm or less, and, as an example, have a length of 0.2 mm and a width of 0.1 mm. Chip capacitors and chip resistors.
  • the electronic component module 1 has only the electronic components 12 and 13, but the electronic component module 1 may include a larger number of electronic components (chip capacitor, chip resistor, etc.).
  • connection terminals 12a and 13a are electrically connected to the connection terminal 11a of the semiconductor package 11 via a part of the wiring structure 21 of the pitch conversion layer 20. It is connected.
  • the terminal pitch of the connection terminals 12a and 13a is wider than the terminal pitch P1 between the connection terminals 11a.
  • terminal density of the number of connection terminals 12a and 13a (two for each) with respect to the installation area of the electronic components 12 and 13 is lower than the terminal density of the number of connection terminals 11a with respect to the installation area of the semiconductor package 11. There is.
  • the sealing portion 14 is a member configured to seal the semiconductor package 11 and the electronic components 12 and 13 inside with a protective material to cover and protect substantially the entire surface of the electronic components.
  • the sealing portion 14 is configured to have, for example, a rectangular or plate-shaped outer shape.
  • the connection terminal 11a of the semiconductor package 11 and the connection terminals 12a and 13a (lower surface of each terminal) of the electronic components 12 and 13 are directed from the lower surface 14a of the sealing portion 14 to the outside (pitch conversion layer 20 side).
  • the semiconductor package 11 and the electronic components 12 and 13 are sealed with a sealing material so as to be exposed.
  • the sealing material for the semiconductor package 11 is required to have various performances such as thermal conductivity, electrical insulation, heat resistance, moisture resistance, low thermal expansion and workability, and is sealed in the sealing portion 14. Since the semiconductor package 11 to be stopped has a form in which the bare chip is already sealed, the protective material used for the sealing portion 14 may be any material that satisfies some performances such as low thermal expansion and workability. Various materials can be used. As the protective material used for the sealing portion 14, for example, an epoxy resin containing a large amount of an inorganic filler can be used.
  • the pitch conversion layer 20 differs in the pitch of the connection terminals of the component sealing member 10 on the upper surface 20a (first surface) side on the lower surface 20b (second surface) on the opposite side (lower side of the drawing) from the component sealing member 10.
  • This is a wiring layer for converting to the terminal pitch P2 (second terminal pitch). More specifically, the pitch conversion layer 20 converts the terminal pitch P1 of the connection terminal 11a of the semiconductor package 11 on the upper surface 20a side into a terminal pitch P2 wider than the terminal pitch P1 on the lower surface 20b side by the wiring structure 21. do.
  • the pitch conversion layer 20 is a kind of rewiring layer having a terminal pitch conversion function, which is a function of a package substrate, and is a layer in which a wiring structure 21 is formed of, for example, polyimide or copper wiring.
  • a wiring structure 21 is formed of, for example, polyimide or copper wiring.
  • the wiring structure 21 of the pitch conversion layer 20 is electrically connected to the connection terminals 11a of the semiconductor package 11 and the connection terminals 12a and 13a of the electronic components 12 and 13 on the upper surface 20a side.
  • the wiring structure 21 is electrically connected to the external connection terminal 22 (third connection terminal) for mounting on the wiring board 30 (see (c) in FIG. 3) on the lower surface 20b side.
  • the external connection terminal 22 is, for example, a solder bump.
  • the terminal pitch P2 of the external connection terminal 22 is, for example, 1000 ⁇ m or more, and is connected to the corresponding connection terminal of the wiring board 30 by soldering or the like.
  • a part of the connection terminal 11a may be electrically connected to the connection terminals 12a and 13a by the wiring structure 21.
  • FIGS. 2 and 3 are diagrams showing a method of manufacturing the electronic component module 1.
  • 3 (a) to 3 (c) are views showing a method of manufacturing an electronic component module 1 and an electronic circuit board 2 which are performed following the process of FIG.
  • the electronic circuit board 2 provided with the electronic component module 1 can be manufactured, for example, through the following steps (a) to (c).
  • Step (a) In the step (a), in order to form the component sealing member 10, the semiconductor package 11 and the electronics are exposed so that the connection terminals 11a of the semiconductor package 11 and the connection terminals 12a and 13a of the electronic components 12 and 13 are exposed from the surface 10b.
  • the parts 12 and 13 are sealed with a protective material and integrated.
  • the support 100 is first prepared, and the adhesive layer 101 is formed on one surface of the support 100.
  • the support 100 is made of, for example, PET, and the adhesive layer 101 is made of, for example, an acrylic resin.
  • the adhesive layer 101 has a holding force that can temporarily hold the electronic components arranged on the adhesive layer 101, but has an adhesive force that can be peeled off in a later step.
  • the semiconductor package 11 and the electronic components 12 and 13 are arranged at predetermined positions on the adhesive layer 101 provided on the support 100, and the adhesive layer 101 is adhered. Temporarily fix by force. At this time, the semiconductor package 11 and the electronic components 12 and 13 are attached so that the connection terminal 11a of the semiconductor package 11 and the lower surfaces of the connection terminals 12a and 13a of the electronic components 12 and 13 are in contact with the adhesive layer 101.
  • the semiconductor package 11 and the electronic components 12 and 13 are sealed so as to be substantially completely covered with the protective material constituting the sealing portion 14.
  • the connection terminals 11a and the lower surfaces of the connection terminals 12a and 13a are in contact with the adhesive layer 101, these connection terminals are not sealed by the protective material.
  • the protective material used here a material having performances such as low thermal expansion and workability can be used, and for example, an epoxy resin containing a large amount of an inorganic filler can be used.
  • the support 100 is removed from the sealing portion 14 together with the adhesive layer 101, and as shown in FIG. 2 (e), the component sealing member 10 is acquired. Will be done.
  • the component sealing member 10 is configured such that the connection terminals 11a of the semiconductor package 11 and the connection terminals 12a and 13a of the electronic components 12 and 13 are exposed from the lower surface 10a because of the coating by the adhesive layer 101.
  • Step (b) In the step (b), as shown in (a) of FIG. 3 and (b) of FIG. 3, the terminal pitch P1 between the connection terminals 11a of the semiconductor package 11 exposed from the lower surface 10a of the component sealing member 10 is formed on the upper surface.
  • a pitch conversion layer 20 having a wiring structure 21 for converting to a terminal pitch P2 different from the terminal pitch P1 on the lower surface 20b opposite to the 20a and electrically connecting the connection terminals 11a to the external connection terminals 22 arranged at the terminal pitch P2.
  • the wiring structure 21 is formed so as to be electrically connected to the connection terminals 11a exposed from the component sealing member 10 and the connection terminals 12a and 13a on the upper surface 20a side.
  • an insulating layer is formed on the lower surface 10a (see (e) of FIG. 2) of the component sealing member 10, and the region corresponding to the connection terminals 11a, 12a, and 13a exposed from the component sealing member 10 is formed.
  • An opening is provided, and a predetermined circuit pattern of the wiring structure 21 is formed by a semi-additive method or the like.
  • a metal thin film is formed on an insulating layer, a circuit pattern is formed by a dry film resist or the like, and plating (for example, copper) is formed in the circuit pattern by electrolytic plating.
  • plating for example, copper
  • a wiring pattern made of copper wiring or the like is formed by a method of removing the dry film and removing an unnecessary metal thin film.
  • an insulating layer is formed. As a result, as shown in FIG. 3A, the wiring structure 21 including the wiring pattern and the insulating layer is formed.
  • an external connection terminal 22 is provided on the lower surface 20b side of the wiring structure 21 so as to have a terminal pitch P2.
  • the external connection terminal 22 for example, a predetermined number of solder bumps are formed.
  • the external connection terminal 22 is electrically connected to the wiring pattern of the wiring structure 21.
  • the wiring structure 21 connects a part of the connection terminal 11a to the connection terminals 12a and 13a, and connects the rest of the connection terminal 11a to the external connection terminal 22 on the lower surface 20b side of the pitch conversion layer 20. ..
  • the connection terminals 12a and 13a of the electronic components 12 and 13 are connected to the external connection terminal 22 on the lower surface 20b side of the pitch conversion layer 20.
  • the electronic component module 1 including the component sealing member 10 and the pitch conversion layer 20 is formed.
  • the step (c) is a step of forming the electronic circuit board 2 by using the electronic component modules 1 manufactured in the steps (a) and (b).
  • the electronic component module 1 and the wiring board 30 are prepared. Then, positioning is performed so that the external connection terminal 22 of the electronic component module 1 is located at the connection terminal corresponding to the external connection terminal 22 on the wiring board 30, and then both connection terminals are connected.
  • this connection method for example, the external connection terminal 22 may be heated and melted.
  • the wiring board 30 used for the electronic circuit board 2 may be a motherboard.
  • the electronic component (for example, an electronic component having a narrow terminal pitch) is not directly mounted on the wiring board, but first includes the electronic component. It is assembled as an electronic component module 1 and the module is mounted on a wiring board 30.
  • the method of manufacturing the electronic component module 1 at least two or more types of electronic components (semiconductor package 11 and electronic components 12 and 13) are integrated into a component sealing member 10 by a protective material, and the component sealing member 10 is used.
  • the connection terminals 11a, 12a, 13a of the electronic components exposed from the above are converted by the pitch conversion layer 20 to the terminal pitch P2 suitable for connection on the wiring board 30.
  • the pitch conversion layer 20 is modularized. It is possible to reduce the connection failure of the electronic component to the wiring board by converting it into a connection pitch that is easy to connect to the wiring board 30.
  • the wiring in the wiring board 30 corresponding to the electronic component 12 is coarse and dense (region R in FIG. 9).
  • the terminals of the wiring structure 21 and the external connection terminal 22 can be averaged.
  • the pitch P2 can be easily connected to the wiring board 30. Therefore, it is possible to reduce the connection failure of the electronic component (semiconductor package 11 or the like) to the wiring board 30.
  • the wiring board 30 can be thinned within the range corresponding to the terminal pitch P2 of the external connection terminal 22, and as an example, the wiring board 30 has one layer or two layers. It may be a substrate of.
  • the wiring board is made into multiple layers (for example, 4 layers or 5 layers or more) in order to cope with the high density of connection terminals of the semiconductor package as described above. By wiring in it, we have tried to prevent connection failure.
  • the wiring structure of the pitch conversion layer is designed including the region where the mounting density is low (for example, the installation region of the electronic components 12 and 13) as in the above-mentioned manufacturing method of the electronic component module. Therefore, even if the number of laminated wiring boards 30 is reduced, connection defects on the wiring boards can be reduced.
  • the wiring structure 21 is such that some of the terminals of the connection terminals 11a are connected to the external connection terminals 22 via the electronic components 12 and 13. Is forming. Therefore, as described above, the wiring structure 21 of the pitch conversion layer 20 is formed by more efficiently utilizing the installation areas of the semiconductor package 11 and the electronic components 12 and 13 in the pitch conversion layer 20, and the wiring board 30 is reached. It is possible to design the terminal pitch P2 of the external connection terminal 22 which is more suitable for the connection of.
  • the step of forming the component sealing member 10 includes a step of attaching the semiconductor package 11 and the electronic components 12 and 13 to the support 100, and the semiconductor package is arranged on the support 100.
  • 11 may be sealed with a protective material so as to cover the electronic components 12 and 13. Therefore, the component sealing member 10 in which the semiconductor package 11 and the electronic components 12 and 13 are integrated with a protective material can be easily formed.
  • the protective material forming the sealing portion 14 may include a flexible material or a material having an electromagnetic wave shielding property.
  • the protective material contains a flexible material
  • the manufactured electronic component module 1 can have a flexible configuration, and can also have a bendable configuration depending on the degree of flexibility.
  • the protective material contains a material having an electromagnetic wave shielding property, it is possible to easily impart the electromagnetic wave shielding performance to the electronic component module 1.
  • connection terminal 11a in the step of forming the pitch conversion layer 20, the connection terminal 11a may be electrically connected to the wiring structure 21 by plating on the upper surface 20a side.
  • the pitch of the connection terminal 11a is often narrow, but by making the electrical connection between the connection terminal 11a and the wiring structure 21 by plating instead of soldering, fine connection between the two can be performed more reliably. It becomes possible to reduce the connection failure in this part.
  • FIG. 4 (a) to 4 (d) are diagrams showing another method for manufacturing the electronic component module 1 and the electronic circuit board 2, which is performed after the step of FIG.
  • the pitch conversion layer 20 is first formed on the support 102. That is, unlike the above-described embodiment, the pitch conversion layer 20 is not directly formed on the component sealing member 10.
  • the formed pitch conversion layer 20 is attached on the surface 10a of the component sealing member 10, and the lower surface of the component sealing member 10 is attached.
  • connection terminals 11a, 12a and 13a exposed from 10a are connected to the connection terminals of the pitch conversion layer 20.
  • the process of forming the external connection terminal 22 after the step of FIG. 4 (b) (see (c) of FIG. 4) and the step of manufacturing the electronic circuit board 2 (see (d) of FIG. 4). Is the same as the steps of FIG. 3 (b) and FIG. 3 (c).
  • FIG. 5 (a) to 5 (e) are views showing still another method for manufacturing the electronic component module 1, particularly the component encapsulating member 10.
  • the support 100 is first prepared, and the release layer 103 is formed on one surface of the support 100.
  • the release layer 103 is made of, for example, a silicon resin or the like.
  • the sealing portion 14 is first formed on the release layer 103 with a protective material.
  • the semiconductor package 11 and the electronic components 12 and 13 are not mounted on the support 100 (release layer 103). After that, as shown in FIG.
  • the semiconductor package 11 and the electronic components 12 and 13 are contained in the sealing portion 14 so that the connection terminals 11a, 12a, 13a are exposed from the surface 14a of the sealing portion 14. Perform the process of embedding. After that, the support 100 is released from the sealing portion 14 together with the release layer 103. As a result, the component sealing member 10 shown in FIG. 5 (e) is acquired. In the subsequent steps, the electronic circuit board 2 is acquired by performing the same configuration as the steps shown in FIGS. 3 (a) to 3 (c). Even with such a manufacturing method, the same effect as that of the above-described embodiment can be obtained.
  • FIG. 6A is a cross-sectional view showing an example of an electronic component module provided with a heat sink
  • FIG. 6B is a cross-sectional view showing another example of the electronic component module provided with a heat sink.
  • the component sealed to the component encapsulation member 10A is a semiconductor bare chip 11A
  • the component encapsulating member 10A has a pitch conversion layer 20.
  • a heat sink 40 is further attached to the opposite upper surface 10b.
  • the semiconductor chip included in the electronic component module according to this embodiment is preferably in the form of a semiconductor package, but is a sealing material (protective material) such as a discrete semiconductor having a smaller calorific value than a highly integrated circuit such as an LSI. ) Is relatively easy, the semiconductor bare chip 11A may be provided in the component sealing member 10.
  • the semiconductor package 11 is directly connected to the heat sink 40, so that the heat generated by the heat sink 40 can be dissipated more efficiently. ..
  • the electronic component module 1B provided with the heat sink 40 As shown in FIG. 2D, after sealing the semiconductor package 11 or the like with a protective material, until the top surface of the semiconductor package 11 is exposed. The sealing portion 14 is polished and attached so that the heat sink 40 is in contact with the exposed top surface.
  • the electronic component module can be provided with a heat dissipation function, and the heat generated by the semiconductor package 11 or the like can be efficiently dissipated. Further, since heat can be dissipated efficiently, it is possible to use an inexpensive material whose heat resistance is not so high as a protective material for sealing the semiconductor package 11.
  • FIGS. 7 (a) and 7 (b) are cross-sectional views showing a modified example of the electronic component module.
  • the insulating layer 16 is provided on the surface 10a, and sublimable particles are contained in the protective material.
  • the sublimable particles may be sublimated in the heating step in the step to provide voids inside.
  • the inside of the component sealing member 10 can be made porous by the voids.
  • the terminal pitch P1 may be 50 ⁇ m or less.
  • the electronic component module including the pitch conversion layer 20 may be formed by providing the circuit by plating or the like without using solder.
  • the present invention is not limited to the above embodiments and can be applied to various embodiments.
  • an electronic component module mainly using a semiconductor chip has been described as an example, but the present invention is applied to an electronic component module in which all or a part of the functions of the semiconductor chip are replaced by chip components or the like. You may.
  • a large number of electronic components are sealed and integrated with a protective material to form the component sealing member.
  • the electronic component module may be used as the component built-in board 3 without being connected to the wiring board. ..
  • a very large number of electronic components such as a semiconductor package 11, electronic components 12, 13, and 18 are sealed with a protective material to form a component sealing member 10D, and a component sealing member is formed.
  • An electronic component module may be provided by providing a pitch conversion layer 20 connected to the connection terminal 11a of the semiconductor package 11 of 10D and the connection terminals 12a, 13a of the electronic components 12, 13 and 18.
  • connection connectors 50 and 51 may be provided on the surface 20b of the pitch conversion layer 20, and the electronic component module may be used as the component built-in substrate 3.
  • the connection connectors 50 and 51 are electrically connected to the pitch conversion layer 20. It should be noted that other electronic components may be provided on the surface 20b of the pitch conversion layer 20 so as to be electrically connected to the pitch conversion layer 20.

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Abstract

A method for manufacturing an electronic component module 1 comprises a step for forming a component sealing member 10, and a step for forming a pitch conversion layer 20. In the step for forming the component sealing member 10, the component sealing member 10 is formed in which a semiconductor package 11 and electronic components 12 and 13 are sealed and integrated by a protection material. In this step, connection terminals 11a of the semiconductor package 11 and connection terminals 12a and 13a of the electronic components 12 and 13 are exposed from the component sealing member 10. In the step for forming the pitch conversion layer 20, a terminal pitch P1 between the connection terminals 11a is converted into a terminal pitch P2 on a lower surface 20b side greater than the terminal pitch P1, and then the connection terminals 11a are electrically connected to external connection terminals 22 disposed at the terminal pitch P2.

Description

電子部品モジュールの製造方法、電子回路基板の製造方法、及び、部品内蔵基板の製造方法Manufacturing method of electronic component module, manufacturing method of electronic circuit board, and manufacturing method of component built-in board
　本発明は、電子部品モジュールの製造方法、電子回路基板の製造方法、及び、部品内蔵基板の製造方法に関する。 The present invention relates to a method for manufacturing an electronic component module, a method for manufacturing an electronic circuit board, and a method for manufacturing a board with built-in components.
　特許文献１には、電子部品とプリント配線板との接続にクリーム状のはんだを用いる方法が開示されている。 Patent Document 1 discloses a method of using cream-like solder for connecting an electronic component and a printed wiring board.
特許第３０８６０６６号公報Japanese Patent No. 3086066
　従来から、半導体ベアチップを封止樹脂にて封止した半導体パッケージなどの電子部品をマザーボード（配線基板）に実装して電子回路基板を作製している。しかしながら、半導体パッケージを含む電子部品の小型化に伴い、電子部品における端子ピッチも狭くなってきている。このため、はんだ等を用いて電子部品を実装する際にはんだブリッジなどによる接続不良が発生してしまうことがある。 Conventionally, electronic circuit boards have been manufactured by mounting electronic components such as semiconductor packages in which semiconductor bare chips are sealed with a sealing resin on a motherboard (wiring board). However, with the miniaturization of electronic components including semiconductor packages, the terminal pitch in electronic components is also becoming narrower. Therefore, when mounting an electronic component using solder or the like, a connection failure due to a solder bridge or the like may occur.
　そこで、本発明は、配線基板に対する電子部品の接続不良を低減するための方法を提供することを目的とする。 Therefore, an object of the present invention is to provide a method for reducing poor connection of electronic components to a wiring board.
　本発明は、一側面として、電子部品モジュールの製造方法に関する。この電子部品モジュールの製造方法は、第１電子部品と第１電子部品とは異なる種類の第２電子部品とを保護材料によって封止一体化した部品封止部材を形成する工程であって、第１電子部品の第１接続端子と第２電子部品の第２接続端子とが当該部品封止部材から露出するように部品封止部材を形成する工程と、部品封止部材から露出する第１接続端子及び第２接続端子に第１面側で電気的に接続され、第１接続端子間の第１端子ピッチを、第１面とは逆の第２面側において第１端子ピッチとは異なる第２端子ピッチに変換して第１接続端子を第２端子ピッチで配置された第３接続端子に電気的に接続する配線構造を有するピッチ変換層を形成する工程と、を備える。 The present invention relates to a method for manufacturing an electronic component module as one aspect. The method for manufacturing this electronic component module is a step of forming a component sealing member in which a first electronic component and a second electronic component of a different type from the first electronic component are sealed and integrated with a protective material. 1 A step of forming a component sealing member so that the first connection terminal of an electronic component and a second connection terminal of a second electronic component are exposed from the component sealing member, and a first connection exposed from the component sealing member. A second terminal pitch that is electrically connected to the terminal and the second connection terminal on the first surface side, and the first terminal pitch between the first connection terminals is different from the first terminal pitch on the second surface side opposite to the first surface. A step of forming a pitch conversion layer having a wiring structure for converting to a two-terminal pitch and electrically connecting the first connection terminal to a third connection terminal arranged at the second terminal pitch is provided.
　この方法では、配線基板に電子部品（例えば狭端子ピッチの電子部品）を直接実装するのではなく、まず電子部品を含む電子部品モジュールとして組み上げて、そのモジュールを配線基板に実装するようにしている。そして、電子部品モジュールの製造方法では、少なくとも２種類以上の電子部品が保護材料によって一体化された部品封止部材とされ、部品封止部材から露出する電子部品の接続端子を、配線基板での接続に適した端子ピッチ（第２端子ピッチ）へとピッチ変換層で変換している。このため、電子部品の端子ピッチが配線基板への接続の際に接続不良を生じ易そうな場合（例えば狭ピッチ）であっても、モジュール化によりピッチ変換層で配線基板に接続しやすい接続ピッチに変換して、配線基板に対する電子部品の接続不良を低減することができる。特に、このモジュール化方法では、配線基板に実装予定である少なくとも２種類以上の電子部品を含んでモジュール化するため、モジュール化する領域を広くとることができ、配線基板への接続に用いる第３接続端子の第２端子ピッチの設計を柔軟に行い、配線基板への接続不良をより低減することが可能である。 In this method, instead of directly mounting an electronic component (for example, an electronic component with a narrow terminal pitch) on a wiring board, the module is first assembled as an electronic component module including the electronic component, and the module is mounted on the wiring board. .. In the method of manufacturing an electronic component module, at least two or more types of electronic components are integrated as a component encapsulation member by a protective material, and the connection terminals of the electronic components exposed from the component encapsulation member are connected to the wiring board. The pitch conversion layer converts the terminal pitch (second terminal pitch) suitable for connection. Therefore, even if the terminal pitch of the electronic component is likely to cause a connection failure when connecting to the wiring board (for example, narrow pitch), the connection pitch that makes it easy to connect to the wiring board in the pitch conversion layer by modularization. It is possible to reduce the connection failure of the electronic component to the wiring board by converting to. In particular, in this modularization method, since at least two types of electronic components to be mounted on the wiring board are included in the modularization, a wide modularization area can be taken, and a third used for connection to the wiring board can be taken. It is possible to flexibly design the second terminal pitch of the connection terminal and further reduce the connection failure to the wiring board.
　上記製造方法において、ピッチ変換層の形成工程では、第２端子ピッチが第１端子ピッチよりも広くなるように配線構造及び第３接続端子を形成してもよい。この場合、配線基板に第１電子部品等を接続する際、第３接続端子の端子ピッチを第１電子部品の端子ピッチよりも広くすることができるので、電子部品モジュールを配線基板に実装する際、電子部品の接続不良をより低減することができる。 In the above manufacturing method, in the step of forming the pitch conversion layer, the wiring structure and the third connection terminal may be formed so that the second terminal pitch is wider than the first terminal pitch. In this case, when connecting the first electronic component or the like to the wiring board, the terminal pitch of the third connection terminal can be made wider than the terminal pitch of the first electronic component, so that when the electronic component module is mounted on the wiring board. , It is possible to further reduce the connection failure of electronic parts.
　上記の製造方法において、第１電子部品が半導体パッケージであり、ピッチ変換層の形成工程では、第１接続端子の少なくとも一部の端子が第２電子部品を介して第３接続端子に接続されるように配線構造を形成してもよい。この場合、ピッチ変換層における第１電子部品及び第２電子部品の設置領域をより効率的に利用してピッチ変換層の配線構造を形成して、配線基板への接続により適した第３接続端子の第２端子ピッチを設計することができる。その結果、電子部品モジュールを配線基板に実装する際、電子部品の接続不良をより一層低減することができる。 In the above manufacturing method, the first electronic component is a semiconductor package, and in the step of forming the pitch conversion layer, at least a part of the terminals of the first connection terminal is connected to the third connection terminal via the second electronic component. The wiring structure may be formed as described above. In this case, the wiring structure of the pitch conversion layer is formed by more efficiently utilizing the installation areas of the first electronic component and the second electronic component in the pitch conversion layer, and the third connection terminal more suitable for connection to the wiring board. The second terminal pitch of can be designed. As a result, when the electronic component module is mounted on the wiring board, it is possible to further reduce the connection failure of the electronic component.
　上記製造方法において、第１電子部品が半導体パッケージであり、半導体パッケージの第１端子ピッチの幅が５００μｍ以下であってもよい。このように、小型の半導体パッケージ又は多数の配線引き出しを有する半導体パッケージを用いた場合であっても、モジュール化することにより、電子部品モジュールを配線基板に実装する際、電子部品の接続不良をより一層低減することができる。 In the above manufacturing method, the first electronic component may be a semiconductor package, and the width of the first terminal pitch of the semiconductor package may be 500 μm or less. In this way, even when a small semiconductor package or a semiconductor package having a large number of wiring drawers is used, by modularizing it, when the electronic component module is mounted on the wiring board, the connection failure of the electronic component is further improved. It can be further reduced.
　上記製造方法において、第３接続端子の第２端子ピッチの幅が１０００μｍ以上であってもよい。この場合、第３接続端子の接続ピッチを広くすることができるので、電子部品モジュールを配線基板に実装する際、電子部品の接続不良をより一層低減することができる。 In the above manufacturing method, the width of the second terminal pitch of the third connection terminal may be 1000 μm or more. In this case, since the connection pitch of the third connection terminal can be widened, it is possible to further reduce the connection failure of the electronic component when the electronic component module is mounted on the wiring board.
　上記製造方法において、部品封止部材の形成工程では、多数の電子部品を第１電子部品及び第２電子部品と共に保護材料によって封止一体化して部品封止部材を形成してもよい。この場合、端子ピッチ又は端子密度（各電子部品を実装するための平面領域に対するその接続端子の合計表面積）の異なる多くの電子部品の設置領域を全体的に利用して、ピッチ変換層の配線構造を自由に設計することができ、より効率的なピッチ変換の配線構造とすることができる。その結果、電子部品モジュールを配線基板に実装する際、電子部品の接続不良をより一層低減することができる。なお、上記のモジュール化を利用して、半導体集積回路（ＩＣ）の全部又は一部の機能をチップ部品からなる受動素子などの電子部品（第１電子部品、第２電子部品、及び多数の電子部品）で組み替えて回路形成し、使用している半導体集積回路の配線を簡素化または半導体集積回路の使用を止めて、接続不良を更に抑制した電子回路部品を製造するようにしてもよい。 In the above manufacturing method, in the process of forming a component sealing member, a large number of electronic components may be sealed and integrated together with a first electronic component and a second electronic component with a protective material to form a component sealing member. In this case, the wiring structure of the pitch conversion layer makes full use of the installation area of many electronic components having different terminal pitches or terminal densities (total surface area of the connecting terminals relative to the planar area for mounting each electronic component). Can be freely designed, and a more efficient pitch conversion wiring structure can be obtained. As a result, when the electronic component module is mounted on the wiring board, it is possible to further reduce the connection failure of the electronic component. In addition, by utilizing the above modularization, all or part of the functions of the semiconductor integrated circuit (IC) can be combined with electronic components such as passive elements composed of chip components (first electronic component, second electronic component, and a large number of electrons). It is also possible to reassemble the components) to form a circuit, simplify the wiring of the semiconductor integrated circuit used, or stop the use of the semiconductor integrated circuit, and manufacture an electronic circuit component that further suppresses connection failure.
　上記製造方法において、第２電子部品が受動部品であってもよい。この場合、一般的に端子ピッチ（又は端子密度）が半導体パッケージよりも広い（又は粗である）受動部品のピッチ変換層における設置領域を有効に活用して、ピッチ変換層の配線構造を設計することができる。その結果、電子部品モジュールを配線基板に実装する際、電子部品の接続不良をより一層低減することができる。なお、この場合において、第２電子部品は、長さ１．０ｍｍ以下で且つ幅０．５ｍｍ以下のチップコンデンサ及びチップ抵抗の少なくとも一方を含んでもよく、長さ０．２ｍｍ以下で且つ幅０．１ｍｍ以下のチップコンデンサ及びチップ抵抗の少なくとも一方を含んでもよい。 In the above manufacturing method, the second electronic component may be a passive component. In this case, the wiring structure of the pitch conversion layer is designed by effectively utilizing the installation area in the pitch conversion layer of the passive component whose terminal pitch (or terminal density) is generally wider (or coarser) than that of the semiconductor package. be able to. As a result, when the electronic component module is mounted on the wiring board, it is possible to further reduce the connection failure of the electronic component. In this case, the second electronic component may include at least one of a chip capacitor having a length of 1.0 mm or less and a width of 0.5 mm or less and a chip resistor, and having a length of 0.2 mm or less and a width of 0. It may include at least one of a chip capacitor of 1 mm or less and a chip resistor.
　上記製造方法において、部品封止部材の形成工程は、第１電子部品及び第２電子部品を支持体に貼り付ける工程を含み、部品封止部材の形成工程では、支持体上に配置された第１電子部品及び第２電子部品を覆うように保護材料で封止してもよい。または、部品封止部材の形成工程は、保護材料を支持体上に形成する工程を含み、部品封止部材の形成工程では、第１接続端子及び第２接続端子が保護材料から露出するように第１電子部品及び第２電子部品を保護材料に埋め込み部品封止部材を形成してもよい。上記何れの場合であっても、第１電子部品及び第２電子部品を保護材料で一体化した部品封止部材を容易に形成することができる。 In the above manufacturing method, the step of forming the component sealing member includes a step of attaching the first electronic component and the second electronic component to the support, and in the step of forming the component sealing member, the first electronic component and the second electronic component are arranged on the support. It may be sealed with a protective material so as to cover the 1st electronic component and the 2nd electronic component. Alternatively, the step of forming the component sealing member includes a step of forming the protective material on the support, and in the step of forming the component sealing member, the first connection terminal and the second connection terminal are exposed from the protective material. The first electronic component and the second electronic component may be embedded in a protective material to form a component sealing member. In any of the above cases, it is possible to easily form a component sealing member in which the first electronic component and the second electronic component are integrated with a protective material.
　上記製造方法において、ピッチ変換層の形成工程では、ピッチ変換層に直交する方向から視た際に配線構造の一部が第１電子部品の設置領域の外側領域に位置するように配線構造を形成してもよい。また、ピッチ変換層の形成工程では、ピッチ変換層に直交する方向から視た際に配線構造の一部が第２電子部品と重なるように配線構造を形成してもよい。上記何れの場合であっても、配線構造の設計をより柔軟に行うことができ、配線基板に接続するのに適した第３接続端子の第２端子ピッチを容易に設計することができる。 In the above manufacturing method, in the step of forming the pitch conversion layer, the wiring structure is formed so that a part of the wiring structure is located in the outer region of the installation area of the first electronic component when viewed from the direction orthogonal to the pitch conversion layer. You may. Further, in the step of forming the pitch conversion layer, the wiring structure may be formed so that a part of the wiring structure overlaps with the second electronic component when viewed from a direction orthogonal to the pitch conversion layer. In any of the above cases, the wiring structure can be designed more flexibly, and the second terminal pitch of the third connection terminal suitable for connecting to the wiring board can be easily designed.
　上記製造方法において、保護材料は、可撓性材料又は電磁波遮蔽性のある材料を含んでもよい。保護材料が可撓性材料を含む場合、製造された電子部品モジュールを柔軟な構成とすることができ、可撓性の程度により折り曲げ可能な構成とすることも可能である。一方、保護材料が電磁波遮蔽性のある材料を含む場合、電子部品モジュールに電磁波遮蔽性能を付与することが簡単にできる。なお、保護材料が両材料を含む場合、それぞれの機能を奏することができる。 In the above manufacturing method, the protective material may include a flexible material or a material having electromagnetic wave shielding properties. When the protective material contains a flexible material, the manufactured electronic component module can have a flexible configuration, and can also have a bendable configuration depending on the degree of flexibility. On the other hand, when the protective material contains a material having an electromagnetic wave shielding property, it is possible to easily impart electromagnetic wave shielding performance to the electronic component module. When the protective material contains both materials, each function can be achieved.
　上記製造方法において、ピッチ変換層の形成工程では、第１面側において第１接続端子がめっきにより配線構造に電気的に接続されてもよい。第１接続端子のピッチは狭ピッチであることが多いが、この第１接続端子と配線構造との電気的な接続を、はんだではなくめっきで行うことにより、両者の微細接続をより確実に実行することが可能となる。 In the above manufacturing method, in the step of forming the pitch conversion layer, the first connection terminal may be electrically connected to the wiring structure by plating on the first surface side. The pitch of the first connection terminal is often narrow, but by making the electrical connection between the first connection terminal and the wiring structure by plating instead of soldering, fine connection between the two can be performed more reliably. It becomes possible to do.
　上記製造方法は、部品封止部材の第１接続端子が露出する面以外の面に放熱部材を設置する工程を更に備えてもよい。この場合、電子部品モジュールに放熱機能を付与することができ、第１電子部品が発熱しやすい半導体パッケージ（例えばＬＳＩ）であっても効率的に放熱することができる。また、放熱を効率的に行うことができるため、第１電子部品等を封止する保護材料として、耐熱性がそれほど高くない安価な材料を用いることも可能となる。 The above manufacturing method may further include a step of installing the heat radiating member on a surface other than the surface on which the first connection terminal of the component sealing member is exposed. In this case, the heat dissipation function can be imparted to the electronic component module, and even if the first electronic component is a semiconductor package (for example, LSI) in which heat is likely to be generated, heat can be efficiently dissipated. Further, since heat can be dissipated efficiently, it is possible to use an inexpensive material having not so high heat resistance as a protective material for sealing the first electronic component or the like.
　本発明の別側面に係る電子回路基板の製造方法は、上記何れかの態様を備えた製造方法で製造された電子部品モジュールと配線基板とを準備する工程と、電子部品モジュールにおけるピッチ変換層の第３接続端子を配線基板上の対応する接続端子に接続するように、電子部品モジュールを配線基板に実装する工程と、を備える。この場合、電子部品を含む形でモジュール化され、そのモジュールの中で、配線基板に接続される第３接続端子の端子ピッチを最適化することができるため、モジュール化を通じて電子部品の配線基板への接続不良を低減することが可能となる。 The method for manufacturing an electronic circuit board according to another aspect of the present invention includes a step of preparing an electronic component module and a wiring board manufactured by the manufacturing method having any of the above aspects, and a pitch conversion layer in the electronic component module. A step of mounting the electronic component module on the wiring board is provided so that the third connection terminal is connected to the corresponding connection terminal on the wiring board. In this case, it is modularized to include electronic components, and the terminal pitch of the third connection terminal connected to the wiring board can be optimized in the module. It is possible to reduce the connection failure of.
　上記電子回路基板の製造方法では、配線基板は、１層または２層の基板であってもよい。従来、半導体パッケージ等の電子部品を配線基板に実装する場合、半導体パッケージの接続端子の高密度化に対応するため、配線基板を多層化（例えば４層又は５層以上）にしてその中での配線により、接続不良が起きないようにしてきた。しかしながら、本発明に係る方法によれば、上記の電子部品モジュールの製造方法のように実装密度の低い領域（例えば第２電子部品の設置領域）も含めてピッチ変換層の配線構造を設計できるため、配線基板の積層数を低減しても、配線基板での接続不良を低減することができる。すなわち、本発明の一側面に係る電子回路基板の製造方法によれば、配線基板を１層または２層といった薄い構成とすることも可能である。 In the method for manufacturing an electronic circuit board, the wiring board may be a one-layer or two-layer board. Conventionally, when an electronic component such as a semiconductor package is mounted on a wiring board, the wiring board is made into multiple layers (for example, 4 layers or 5 layers or more) in order to cope with a high density of connection terminals of the semiconductor package. Wiring has been used to prevent poor connections. However, according to the method according to the present invention, it is possible to design the wiring structure of the pitch conversion layer including a region having a low mounting density (for example, an installation region of a second electronic component) as in the above-mentioned method for manufacturing an electronic component module. Even if the number of laminated wiring boards is reduced, poor connection on the wiring boards can be reduced. That is, according to the method for manufacturing an electronic circuit board according to one aspect of the present invention, it is possible to make the wiring board as thin as one layer or two layers.
　本発明の更なる側面に係る部品内蔵基板の製造方法は、上記何れかの態様を備えた製造方法によって製造された電子部品モジュールを準備する工程と、ピッチ変換層の第２面に第３電子部品及び接続コネクタの少なくとも一方を設ける工程と、を備える。このような部品内蔵基板の場合であっても、接続不良を低減するこができる。 The method for manufacturing a component-embedded substrate according to a further aspect of the present invention includes a step of preparing an electronic component module manufactured by a manufacturing method having any of the above aspects, and a third electron on the second surface of the pitch conversion layer. It comprises a step of providing at least one of a component and a connector. Even in the case of such a board with built-in components, it is possible to reduce connection defects.
　本発明によれば、電子部品の接続不良を低減することができる。 According to the present invention, it is possible to reduce connection defects of electronic components.
図１は、本発明の一実施形態に係る電子部品モジュールを示す断面図である。FIG. 1 is a cross-sectional view showing an electronic component module according to an embodiment of the present invention. 図２（ａ）～（ｅ）は、図１に示す電子部品モジュールを製造する方法の一部（部品封止部材を製造する方法）を示す図である。2 (a) to 2 (e) are views showing a part of the method of manufacturing the electronic component module shown in FIG. 1 (method of manufacturing the component encapsulation member). 図３（ａ）～（ｃ）は、図１に示す電子部品モジュール及び電子回路基板を製造する方法であて、図２の工程の後に続いて行われる工程を示す図である。3 (a) to 3 (c) are views showing a method for manufacturing an electronic component module and an electronic circuit board shown in FIG. 1, which are performed after the process of FIG. 2. 図４の（ａ）～（ｄ）は、図１に示す電子部品モジュール及び電子回路基板を製造する別の方法であって、図２の工程の後に続いて行われる工程を示す図である。4 (a) to 4 (d) are diagrams showing another method for manufacturing the electronic component module and the electronic circuit board shown in FIG. 1, which are performed after the process of FIG. 2. 図５（ａ）～（ｅ）は、図１に示す電子部品モジュールを製造する更に別の方法の一部（部品封止部材を製造する方法）を示す図である。5 (a) to 5 (e) are diagrams showing a part (method of manufacturing a component sealing member) of still another method for manufacturing the electronic component module shown in FIG. 1. 図６（ａ）は、ヒートシンクを備えた電子部品モジュールの一例を示す断面図であり、図６（ｂ）は、ヒートシンクを備えた電子部品モジュールの別の例を示す断面図である。FIG. 6A is a cross-sectional view showing an example of an electronic component module provided with a heat sink, and FIG. 6B is a cross-sectional view showing another example of the electronic component module provided with a heat sink. 図７（ａ）及び図７（ｂ）は、電子部品モジュールの変形例を示す断面図である。7 (a) and 7 (b) are cross-sectional views showing a modified example of the electronic component module. 図８は、本発明の一実施形態に係る部品内蔵基板を示す断面図である。FIG. 8 is a cross-sectional view showing a component-embedded substrate according to an embodiment of the present invention. 図９は、電子部品を配線基板に直接実装した比較例の構成を示す断面図である。FIG. 9 is a cross-sectional view showing the configuration of a comparative example in which electronic components are directly mounted on a wiring board.
　以下、図面を参照しながら本発明に係る実施形態について詳細に説明する。以下の説明では、同一又は相当部分には同一の符号を付し、重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。更に、図面の寸法比率は図示の比率に限られるものではない。 Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts will be designated by the same reference numerals, and duplicate description will be omitted. In addition, the positional relationship such as up, down, left, and right shall be based on the positional relationship shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown.
（電子部品モジュールの構成）
　図１は、本実施形態に係る製造方法によって製造される電子部品モジュールの一例を模式的に示す断面図である。図１に示すように、電子部品モジュール１は、部品封止部材１０と、ピッチ変換層２０とを備えている。 (Configuration of electronic component module)
FIG. 1 is a cross-sectional view schematically showing an example of an electronic component module manufactured by the manufacturing method according to the present embodiment. As shown in FIG. 1, the electronic component module 1 includes a component sealing member 10 and a pitch conversion layer 20.
　部品封止部材１０は、半導体パッケージ１１（第１電子部品）と、電子部品１２及び１３（第２電子部品）と、封止部１４とを備えている。部品封止部材１０は、複数又は多数の電子部品が保護材料によって一括して封止され、一体化されている部材である。部品封止部材１０は、ピッチ変換層２０に対面する下面１０ａと下面１０ａとは逆側の上面１０ｂとを有する直方体又は板状の部材であり、所定の剛性を有している。 The component sealing member 10 includes a semiconductor package 11 (first electronic component), electronic components 12 and 13 (second electronic component), and a sealing portion 14. The component sealing member 10 is a member in which a plurality or a large number of electronic components are collectively sealed with a protective material and integrated. The component sealing member 10 is a rectangular parallelepiped or plate-shaped member having a lower surface 10a facing the pitch conversion layer 20 and an upper surface 10b on the opposite side of the lower surface 10a, and has predetermined rigidity.
　半導体パッケージ１１は、半導体ベアチップを封止材料により封止して下方に多数の接続端子１１ａ（第１接続端子）を設けた電子部品である。接続端子１１ａの設置数は、例えば５０ピン以上であり、一例として１００ピン又は４００ピンである。接続端子１１ａの端子ピッチＰ１（第１端子ピッチ）は、例えば５００μｍ以下であり、一例として５００μｍ、１５０μｍ又は５０μｍである。端子ピッチＰ１は、隣接する接続端子１１ａの中心同士の距離である。 The semiconductor package 11 is an electronic component in which a semiconductor bare chip is sealed with a sealing material and a large number of connection terminals 11a (first connection terminals) are provided below. The number of connection terminals 11a installed is, for example, 50 pins or more, and 100 pins or 400 pins as an example. The terminal pitch P1 (first terminal pitch) of the connection terminal 11a is, for example, 500 μm or less, for example, 500 μm, 150 μm, or 50 μm. The terminal pitch P1 is the distance between the centers of adjacent connection terminals 11a.
　電子部品１２及び１３は、チップコンデンサ又はチップ抵抗などの受動部品である。電子部品１２及び１３は、略直方体形状を呈し、その両端に一対の接続端子１２ａ及び一対の接続端子１３ａ（第２接続端子）を有している。電子部品１２及び１３は、例えば、長さ１．０ｍｍ以下で且つ幅０．５ｍｍ以下のチップコンデンサ及びチップ抵抗などのチップ部品であり、一例として、長さ０．２ｍｍで且つ幅０．１ｍｍのチップコンデンサ及びチップ抵抗である。図１では、電子部品モジュール１が電子部品１２及び１３のみを有する構成になっているが、電子部品モジュール１が更に多数の電子部品（チップコンデンサ又はチップ抵抗など）を含んでいてもよい。 Electronic components 12 and 13 are passive components such as chip capacitors or chip resistors. The electronic components 12 and 13 have a substantially rectangular parallelepiped shape, and have a pair of connection terminals 12a and a pair of connection terminals 13a (second connection terminals) at both ends thereof. The electronic components 12 and 13 are chip components such as a chip capacitor and a chip resistor having a length of 1.0 mm or less and a width of 0.5 mm or less, and, as an example, have a length of 0.2 mm and a width of 0.1 mm. Chip capacitors and chip resistors. In FIG. 1, the electronic component module 1 has only the electronic components 12 and 13, but the electronic component module 1 may include a larger number of electronic components (chip capacitor, chip resistor, etc.).
　電子部品１２及び１３が半導体パッケージ１１と共に所定の回路を構成するため、接続端子１２ａ及び１３ａは、ピッチ変換層２０の配線構造２１の一部を介して半導体パッケージ１１の接続端子１１ａに電気的に接続されている。なお、接続端子１２ａ及び１３ａの端子ピッチは、接続端子１１ａ間の端子ピッチＰ１よりも広い。また、電子部品１２及び１３の設置面積に対する接続端子１２ａ及び１３ａの数（一例として各２個）の端子密度は、半導体パッケージ１１の設置面積に対する接続端子１１ａの数の端子密度よりも低くなっている。 Since the electronic components 12 and 13 form a predetermined circuit together with the semiconductor package 11, the connection terminals 12a and 13a are electrically connected to the connection terminal 11a of the semiconductor package 11 via a part of the wiring structure 21 of the pitch conversion layer 20. It is connected. The terminal pitch of the connection terminals 12a and 13a is wider than the terminal pitch P1 between the connection terminals 11a. Further, the terminal density of the number of connection terminals 12a and 13a (two for each) with respect to the installation area of the electronic components 12 and 13 is lower than the terminal density of the number of connection terminals 11a with respect to the installation area of the semiconductor package 11. There is.
　封止部１４は、保護材料によって半導体パッケージ１１と電子部品１２及び１３とを内側に封止してそれら電子部品の略全面を覆って保護するように構成された部材である。封止部１４は、例えば矩形形状又は板形状の外形を有するように構成される。封止部１４では、半導体パッケージ１１の接続端子１１ａと電子部品１２及び１３の接続端子１２ａ及び１３ａ（各端子の下面）が封止部１４の下面１４ａから外側（ピッチ変換層２０側）に向けて露出するように半導体パッケージ１１と電子部品１２及び１３とが封止材料により封止されている。半導体パッケージ１１用の封止材料には、例えば、熱伝導性、電気絶縁性、耐熱性、耐湿性、低熱膨張性及び作業性などの各種性能が必要とされるが、封止部１４において封止される半導体パッケージ１１はベアチップを既に封止している形態であるため、封止部１４に用いられる保護材料は、低熱膨張性及び作業性などの一部性能を満たす材料であればよく、各種の材料を用いることが可能である。なお、封止部１４に用いられる保護材料として、例えば無機充填剤を多量配合したエポキシ樹脂などを用いることができる。 The sealing portion 14 is a member configured to seal the semiconductor package 11 and the electronic components 12 and 13 inside with a protective material to cover and protect substantially the entire surface of the electronic components. The sealing portion 14 is configured to have, for example, a rectangular or plate-shaped outer shape. In the sealing portion 14, the connection terminal 11a of the semiconductor package 11 and the connection terminals 12a and 13a (lower surface of each terminal) of the electronic components 12 and 13 are directed from the lower surface 14a of the sealing portion 14 to the outside (pitch conversion layer 20 side). The semiconductor package 11 and the electronic components 12 and 13 are sealed with a sealing material so as to be exposed. The sealing material for the semiconductor package 11 is required to have various performances such as thermal conductivity, electrical insulation, heat resistance, moisture resistance, low thermal expansion and workability, and is sealed in the sealing portion 14. Since the semiconductor package 11 to be stopped has a form in which the bare chip is already sealed, the protective material used for the sealing portion 14 may be any material that satisfies some performances such as low thermal expansion and workability. Various materials can be used. As the protective material used for the sealing portion 14, for example, an epoxy resin containing a large amount of an inorganic filler can be used.
　ピッチ変換層２０は、上面２０ａ（第１面）側における部品封止部材１０の接続端子のピッチを、部品封止部材１０とは逆側（図示下方）の下面２０ｂ（第２面）において異なる端子ピッチＰ２（第２端子ピッチ）に変換するための配線層である。より具体的には、ピッチ変換層２０は、配線構造２１により、上面２０ａ側における半導体パッケージ１１の接続端子１１ａの端子ピッチＰ１を、下面２０ｂ側において、端子ピッチＰ１よりも広い端子ピッチＰ２に変換する。ピッチ変換層２０は、パッケージ基板の機能である端子ピッチ変換の機能を有する一種の再配線層であり、例えばポリイミド及び銅配線等で配線構造２１を形成した層である。このような配線構造２１は、ピッチ変換層２０に直交する方向から視た際に、その配線が半導体パッケージ１１の配置領域に重なるだけでなく、その一部の配線が半導体パッケージ１１の配置領域の外側領域に位置する又は電子部品１２及び１３の配置領域に重なるように、構成されている。 The pitch conversion layer 20 differs in the pitch of the connection terminals of the component sealing member 10 on the upper surface 20a (first surface) side on the lower surface 20b (second surface) on the opposite side (lower side of the drawing) from the component sealing member 10. This is a wiring layer for converting to the terminal pitch P2 (second terminal pitch). More specifically, the pitch conversion layer 20 converts the terminal pitch P1 of the connection terminal 11a of the semiconductor package 11 on the upper surface 20a side into a terminal pitch P2 wider than the terminal pitch P1 on the lower surface 20b side by the wiring structure 21. do. The pitch conversion layer 20 is a kind of rewiring layer having a terminal pitch conversion function, which is a function of a package substrate, and is a layer in which a wiring structure 21 is formed of, for example, polyimide or copper wiring. When viewed from a direction orthogonal to the pitch conversion layer 20, such a wiring structure 21 not only overlaps the wiring with the arrangement area of the semiconductor package 11, but also a part of the wiring is in the arrangement area of the semiconductor package 11. It is configured to be located in the outer region or to overlap the placement regions of the electronic components 12 and 13.
　ピッチ変換層２０の配線構造２１は、上面２０ａ側において、半導体パッケージ１１の接続端子１１ａと電子部品１２及び１３の接続端子１２ａ及び１３ａとに電気的に接続される。一方、配線構造２１は、下面２０ｂ側において、配線基板３０（図３の（ｃ）を参照）に実装するための外部接続端子２２（第３接続端子）に電気的に接続される。外部接続端子２２は、例えば、はんだバンプである。外部接続端子２２の端子ピッチＰ２は、例えば１０００μｍ以上となっており、はんだ等により、配線基板３０の対応する接続端子に接続される。なお、接続端子１１ａの一部は、配線構造２１により、接続端子１２ａ及び１３ａに電気的に接続されてもよい。 The wiring structure 21 of the pitch conversion layer 20 is electrically connected to the connection terminals 11a of the semiconductor package 11 and the connection terminals 12a and 13a of the electronic components 12 and 13 on the upper surface 20a side. On the other hand, the wiring structure 21 is electrically connected to the external connection terminal 22 (third connection terminal) for mounting on the wiring board 30 (see (c) in FIG. 3) on the lower surface 20b side. The external connection terminal 22 is, for example, a solder bump. The terminal pitch P2 of the external connection terminal 22 is, for example, 1000 μm or more, and is connected to the corresponding connection terminal of the wiring board 30 by soldering or the like. A part of the connection terminal 11a may be electrically connected to the connection terminals 12a and 13a by the wiring structure 21.
（電子部品モジュールの製造方法）
　次に、電子部品モジュール１及び電子部品モジュール１を備えた電子回路基板２の製造方法について、図２及び図３を参照して、説明する。図２（ａ）～（ｅ）は、電子部品モジュール１を製造する方法を示す図である。図３（ａ）～（ｃ）は、電子部品モジュール１及び電子回路基板２を製造する方法であって、図２の工程に続いて行われる工程を示す図である。 (Manufacturing method of electronic component module)
Next, a method of manufacturing the electronic component module 1 and the electronic circuit board 2 including the electronic component module 1 will be described with reference to FIGS. 2 and 3. 2 (a) to 2 (e) are diagrams showing a method of manufacturing the electronic component module 1. 3 (a) to 3 (c) are views showing a method of manufacturing an electronic component module 1 and an electronic circuit board 2 which are performed following the process of FIG.
　電子部品モジュール１を備えた電子回路基板２は、例えば、以下の工程（ａ）～工程（ｃ）を経て製造することができる。
　（ａ）部品封止部材１０を形成する工程
　（ｂ）ピッチ変換層２０を形成する工程
　（ｃ）電子部品モジュール１を配線基板３０に実装する工程 The electronic circuit board 2 provided with the electronic component module 1 can be manufactured, for example, through the following steps (a) to (c).
(A) Step of forming the component sealing member 10 (b) Step of forming the pitch conversion layer 20 (c) Step of mounting the electronic component module 1 on the wiring board 30.
［工程（ａ）］
　工程（ａ）では、部品封止部材１０を形成するために、半導体パッケージ１１の接続端子１１ａと電子部品１２及び１３の接続端子１２ａ及び１３ａとが面１０ｂから露出するように半導体パッケージ１１と電子部品１２及び１３とを保護材料によって封止して一体化する。具体的には、図２の（ａ）及び（ｂ）に示すように、まず支持体１００を準備すると共に、支持体１００の一方の面に粘着層１０１を形成する。支持体１００は、例えば、ＰＥＴから構成されており、粘着層１０１は、例えばアクリル樹脂から構成される。粘着層１０１は、その上に配置した電子部品を一時的に保持できる保持力を有するものの、後の工程で剥がすことができる程度の粘着力を有している。 [Step (a)]
In the step (a), in order to form the component sealing member 10, the semiconductor package 11 and the electronics are exposed so that the connection terminals 11a of the semiconductor package 11 and the connection terminals 12a and 13a of the electronic components 12 and 13 are exposed from the surface 10b. The parts 12 and 13 are sealed with a protective material and integrated. Specifically, as shown in FIGS. 2A and 2B, the support 100 is first prepared, and the adhesive layer 101 is formed on one surface of the support 100. The support 100 is made of, for example, PET, and the adhesive layer 101 is made of, for example, an acrylic resin. The adhesive layer 101 has a holding force that can temporarily hold the electronic components arranged on the adhesive layer 101, but has an adhesive force that can be peeled off in a later step.
　続いて、図２の（ｃ）に示すように、支持体１００上に設けられた粘着層１０１上の所定箇所に半導体パッケージ１１と電子部品１２及び１３とを配置して、粘着層１０１の粘着力により仮止めする。この際、半導体パッケージ１１の接続端子１１ａと電子部品１２及び１３の接続端子１２ａ及び１３ａの下面とが粘着層１０１に接するように、半導体パッケージ１１と電子部品１２及び１３とを取り付ける。 Subsequently, as shown in FIG. 2C, the semiconductor package 11 and the electronic components 12 and 13 are arranged at predetermined positions on the adhesive layer 101 provided on the support 100, and the adhesive layer 101 is adhered. Temporarily fix by force. At this time, the semiconductor package 11 and the electronic components 12 and 13 are attached so that the connection terminal 11a of the semiconductor package 11 and the lower surfaces of the connection terminals 12a and 13a of the electronic components 12 and 13 are in contact with the adhesive layer 101.
　続いて、図２の（ｄ）に示すように、半導体パッケージ１１と電子部品１２及び１３とを封止部１４を構成する保護材料によって略完全に覆うように封止を行う。但し、接続端子１１ａと接続端子１２ａ及び１３ａの下面とが粘着層１０１に接しているため、これら接続端子は、保護材料によって封止されない。ここで用いられる保護材料としては、低熱膨張性及び作業性といった性能を有する材料を使用することができ、例えば無機充填剤を多量配合したエポキシ樹脂などを用いることができる。このような保護材料による封止の後、保護材料が固化すると、支持体１００を粘着層１０１と共に封止部１４から取り外し、図２の（ｅ）に示すように、部品封止部材１０が取得される。部品封止部材１０では、粘着層１０１による被覆のため、半導体パッケージ１１の接続端子１１ａと電子部品１２及び１３の接続端子１２ａ及び１３ａとが下面１０ａから露出するように構成される。 Subsequently, as shown in FIG. 2D, the semiconductor package 11 and the electronic components 12 and 13 are sealed so as to be substantially completely covered with the protective material constituting the sealing portion 14. However, since the connection terminals 11a and the lower surfaces of the connection terminals 12a and 13a are in contact with the adhesive layer 101, these connection terminals are not sealed by the protective material. As the protective material used here, a material having performances such as low thermal expansion and workability can be used, and for example, an epoxy resin containing a large amount of an inorganic filler can be used. After sealing with such a protective material, when the protective material solidifies, the support 100 is removed from the sealing portion 14 together with the adhesive layer 101, and as shown in FIG. 2 (e), the component sealing member 10 is acquired. Will be done. The component sealing member 10 is configured such that the connection terminals 11a of the semiconductor package 11 and the connection terminals 12a and 13a of the electronic components 12 and 13 are exposed from the lower surface 10a because of the coating by the adhesive layer 101.
［工程（ｂ）］
　工程（ｂ）では、図３の（ａ）及び図３の（ｂ）に示すように、部品封止部材１０の下面１０ａから露出する半導体パッケージ１１の接続端子１１ａ間の端子ピッチＰ１を、上面２０ａとは逆の下面２０ｂにおいて端子ピッチＰ１と異なる端子ピッチＰ２に変換して接続端子１１ａを端子ピッチＰ２で配置された外部接続端子２２に電気的に接続する配線構造２１を有するピッチ変換層２０を形成する。ピッチ変換層２０の形成工程では、配線構造２１は、部品封止部材１０から露出する接続端子１１ａと接続端子１２ａ及び１３ａとに上面２０ａ側において電気的に接続されるように形成される。 [Step (b)]
In the step (b), as shown in (a) of FIG. 3 and (b) of FIG. 3, the terminal pitch P1 between the connection terminals 11a of the semiconductor package 11 exposed from the lower surface 10a of the component sealing member 10 is formed on the upper surface. A pitch conversion layer 20 having a wiring structure 21 for converting to a terminal pitch P2 different from the terminal pitch P1 on the lower surface 20b opposite to the 20a and electrically connecting the connection terminals 11a to the external connection terminals 22 arranged at the terminal pitch P2. To form. In the step of forming the pitch conversion layer 20, the wiring structure 21 is formed so as to be electrically connected to the connection terminals 11a exposed from the component sealing member 10 and the connection terminals 12a and 13a on the upper surface 20a side.
　具体的には、部品封止部材１０の下面１０ａ（図２の（ｅ）参照）に絶縁層を形成すると共に、部品封止部材１０から露出する接続端子１１ａ，１２ａ及び１３ａに対応する領域に開口部を設け、セミアディティブ法などによって配線構造２１の所定の回路パターンを形成する。この形成方法として、例えば、絶縁層上に金属薄膜を形成し、ドライフィルムレジストなどにより回路パターンを形成し、電解めっきで回路パターン内にめっき（例えば銅）を形成する。そして、ドライフィルムを除去し、不要な金属薄膜を除去する方法によって、銅配線等からなる配線パターンを形成する。その後、絶縁層を形成する。これにより、図３の（ａ）に示すように、配線パターン及び絶縁層を含む配線構造２１が形成される。 Specifically, an insulating layer is formed on the lower surface 10a (see (e) of FIG. 2) of the component sealing member 10, and the region corresponding to the connection terminals 11a, 12a, and 13a exposed from the component sealing member 10 is formed. An opening is provided, and a predetermined circuit pattern of the wiring structure 21 is formed by a semi-additive method or the like. As this forming method, for example, a metal thin film is formed on an insulating layer, a circuit pattern is formed by a dry film resist or the like, and plating (for example, copper) is formed in the circuit pattern by electrolytic plating. Then, a wiring pattern made of copper wiring or the like is formed by a method of removing the dry film and removing an unnecessary metal thin film. After that, an insulating layer is formed. As a result, as shown in FIG. 3A, the wiring structure 21 including the wiring pattern and the insulating layer is formed.
　続いて、配線構造２１の下面２０ｂ側に端子ピッチＰ２となるように外部接続端子２２を設ける。外部接続端子２２としては、例えば、所定数のはんだバンプを形成する。外部接続端子２２は、配線構造２１の配線パターンに電気的に接続されている。このような工程により、配線構造２１は、接続端子１１ａの一部を接続端子１２ａ及び１３ａに接続させると共に、接続端子１１ａの残りをピッチ変換層２０の下面２０ｂ側における外部接続端子２２に接続させる。また、配線構造２１は、電子部品１２及び１３の接続端子１２ａ及び１３ａをピッチ変換層２０の下面２０ｂ側において外部接続端子２２に接続される。以上により、部品封止部材１０とピッチ変換層２０とを備えた電子部品モジュール１が形成される。 Subsequently, an external connection terminal 22 is provided on the lower surface 20b side of the wiring structure 21 so as to have a terminal pitch P2. As the external connection terminal 22, for example, a predetermined number of solder bumps are formed. The external connection terminal 22 is electrically connected to the wiring pattern of the wiring structure 21. By such a step, the wiring structure 21 connects a part of the connection terminal 11a to the connection terminals 12a and 13a, and connects the rest of the connection terminal 11a to the external connection terminal 22 on the lower surface 20b side of the pitch conversion layer 20. .. Further, in the wiring structure 21, the connection terminals 12a and 13a of the electronic components 12 and 13 are connected to the external connection terminal 22 on the lower surface 20b side of the pitch conversion layer 20. As a result, the electronic component module 1 including the component sealing member 10 and the pitch conversion layer 20 is formed.
［工程（ｃ）］
　工程（ｃ）は、工程（ａ）及び工程（ｂ）にて製造された電子部品モジュール１を用いて電子回路基板２を形成する工程である。工程（ｃ）では、図３の（ｃ）に示すように、電子部品モジュール１と配線基板３０とを準備する。そして、配線基板３０において外部接続端子２２に対応する接続端子に、電子部品モジュール１の外部接続端子２２が位置するように位置決めを行い、その後、両接続端子を接続する。この接続手法としては、例えば、外部接続端子２２を加熱溶融させてもよい。以上により、電子部品モジュール１を備えた電子回路基板２が形成される。なお、電子回路基板２に用いられる配線基板３０はマザーボードであってもよい。 [Step (c)]
The step (c) is a step of forming the electronic circuit board 2 by using the electronic component modules 1 manufactured in the steps (a) and (b). In the step (c), as shown in the (c) of FIG. 3, the electronic component module 1 and the wiring board 30 are prepared. Then, positioning is performed so that the external connection terminal 22 of the electronic component module 1 is located at the connection terminal corresponding to the external connection terminal 22 on the wiring board 30, and then both connection terminals are connected. As this connection method, for example, the external connection terminal 22 may be heated and melted. As a result, the electronic circuit board 2 provided with the electronic component module 1 is formed. The wiring board 30 used for the electronic circuit board 2 may be a motherboard.
　以上、本実施形態に係る電子部品モジュール１及び電子回路基板２の製造方法によれば、配線基板に電子部品（例えば狭端子ピッチの電子部品）を直接実装するのではなく、まず電子部品を含む電子部品モジュール１として組み上げて、そのモジュールを配線基板３０に実装している。そして、電子部品モジュール１の製造方法では、少なくとも２種類以上の電子部品（半導体パッケージ１１及び電子部品１２及び１３）が保護材料によって一体化された部品封止部材１０とされ、部品封止部材１０から露出する電子部品の接続端子１１ａ，１２ａ，１３ａを、配線基板３０での接続に適した端子ピッチＰ２へとピッチ変換層２０で変換している。このため、電子部品（半導体パッケージ１１等）の端子ピッチＰ１が配線基板３０への接続の際に接続不良を生じ易そうな場合（例えば狭ピッチ）であっても、モジュール化によりピッチ変換層２０で配線基板３０に接続しやすい接続ピッチに変換して、配線基板に対する電子部品の接続不良を低減することができる。 As described above, according to the manufacturing method of the electronic component module 1 and the electronic circuit board 2 according to the present embodiment, the electronic component (for example, an electronic component having a narrow terminal pitch) is not directly mounted on the wiring board, but first includes the electronic component. It is assembled as an electronic component module 1 and the module is mounted on a wiring board 30. In the method of manufacturing the electronic component module 1, at least two or more types of electronic components (semiconductor package 11 and electronic components 12 and 13) are integrated into a component sealing member 10 by a protective material, and the component sealing member 10 is used. The connection terminals 11a, 12a, 13a of the electronic components exposed from the above are converted by the pitch conversion layer 20 to the terminal pitch P2 suitable for connection on the wiring board 30. Therefore, even if the terminal pitch P1 of the electronic component (semiconductor package 11 or the like) is likely to cause a connection failure when connected to the wiring board 30 (for example, a narrow pitch), the pitch conversion layer 20 is modularized. It is possible to reduce the connection failure of the electronic component to the wiring board by converting it into a connection pitch that is easy to connect to the wiring board 30.
　特に、このモジュール化方法では、配線基板３０に実装予定である少なくとも２種類以上の電子部品を含んでモジュール化するため、モジュール化する領域を広くとることができ、配線基板３０への接続に用いる外部接続端子２２の端子ピッチＰ２の設計を柔軟に行い、配線基板３０への接続不良をより低減することが可能である。この点について、図９を参照して簡単に説明する。図９に示す従来の方法では、半導体パッケージ１１と電子部品１２，１３とを配線基板３０に直接実装しようとすると、半導体パッケージ１１の接続端子が高密度に実装されていることから、半導体パッケージ１１に対応する配線基板３０内の配線が過密となる。一方、チップ部品のような電子部品１２の接続端子は高密度に実装されるものではないため、電子部品１２に対応する配線基板３０内の配線が粗密である（図９の領域Ｒ）。本実施形態に係る製造方法では、このような過密な部分と粗密な部分とをモジュール化により配線基板３０に実装する前に平均化することができるため、配線構造２１と外部接続端子２２の端子ピッチＰ２とを配線基板３０に接続しやすい構成とすることができる。このため、配線基板３０に対する電子部品（半導体パッケージ１１等）の接続不良を低減することができる。 In particular, in this modularization method, since at least two types of electronic components to be mounted on the wiring board 30 are included in the modularization, a wide modularization area can be widened and used for connection to the wiring board 30. It is possible to flexibly design the terminal pitch P2 of the external connection terminal 22 and further reduce the connection failure to the wiring board 30. This point will be briefly described with reference to FIG. In the conventional method shown in FIG. 9, when the semiconductor package 11 and the electronic components 12 and 13 are directly mounted on the wiring board 30, the connection terminals of the semiconductor package 11 are mounted at high density, so that the semiconductor package 11 is mounted. The wiring in the wiring board 30 corresponding to the above is overcrowded. On the other hand, since the connection terminals of the electronic component 12 such as the chip component are not mounted at high density, the wiring in the wiring board 30 corresponding to the electronic component 12 is coarse and dense (region R in FIG. 9). In the manufacturing method according to the present embodiment, since such an overcrowded portion and a coarsely dense portion can be averaged before being mounted on the wiring board 30 by modularization, the terminals of the wiring structure 21 and the external connection terminal 22 can be averaged. The pitch P2 can be easily connected to the wiring board 30. Therefore, it is possible to reduce the connection failure of the electronic component (semiconductor package 11 or the like) to the wiring board 30.
　しかも、本実施形態に係る製造方法では、図９に示す従来の方法のように半導体パッケージ１１を直接、配線基板３０に接続しないため、配線基板３０を厚くする必要がなくなる。このため、本実施形態に係る製造方法によれば、外部接続端子２２の端子ピッチＰ２に対応する範囲で配線基板３０を薄くすることができ、一例として、配線基板３０は、１層または２層の基板であってもよい。従来、半導体パッケージ１１等の電子部品を配線基板に実装する場合、上記したように半導体パッケージの接続端子の高密度化に対応するため、配線基板を多層化（例えば４層又は５層以上）にしてその中での配線により、接続不良が起きないようにしてきた。しかしながら、本実施形態に係る方法によれば、上記の電子部品モジュールの製造方法のように実装密度の低い領域（例えば電子部品１２，１３の設置領域）も含めてピッチ変換層の配線構造を設計できるため、配線基板３０の積層数を低減しても、配線基板での接続不良を低減することができる。 Moreover, in the manufacturing method according to the present embodiment, since the semiconductor package 11 is not directly connected to the wiring board 30 as in the conventional method shown in FIG. 9, it is not necessary to make the wiring board 30 thick. Therefore, according to the manufacturing method according to the present embodiment, the wiring board 30 can be thinned within the range corresponding to the terminal pitch P2 of the external connection terminal 22, and as an example, the wiring board 30 has one layer or two layers. It may be a substrate of. Conventionally, when an electronic component such as a semiconductor package 11 is mounted on a wiring board, the wiring board is made into multiple layers (for example, 4 layers or 5 layers or more) in order to cope with the high density of connection terminals of the semiconductor package as described above. By wiring in it, we have tried to prevent connection failure. However, according to the method according to the present embodiment, the wiring structure of the pitch conversion layer is designed including the region where the mounting density is low (for example, the installation region of the electronic components 12 and 13) as in the above-mentioned manufacturing method of the electronic component module. Therefore, even if the number of laminated wiring boards 30 is reduced, connection defects on the wiring boards can be reduced.
　また、本実施形態に係る製造方法において、ピッチ変換層２０の形成工程では、接続端子１１ａの一部の端子が電子部品１２及び１３を介して外部接続端子２２に接続されるように配線構造２１を形成している。このため、上述したように、ピッチ変換層２０における半導体パッケージ１１及び電子部品１２及び１３の設置領域をより効率的に利用してピッチ変換層２０の配線構造２１を形成して、配線基板３０への接続により適した外部接続端子２２の端子ピッチＰ２を設計することができる。 Further, in the manufacturing method according to the present embodiment, in the step of forming the pitch conversion layer 20, the wiring structure 21 is such that some of the terminals of the connection terminals 11a are connected to the external connection terminals 22 via the electronic components 12 and 13. Is forming. Therefore, as described above, the wiring structure 21 of the pitch conversion layer 20 is formed by more efficiently utilizing the installation areas of the semiconductor package 11 and the electronic components 12 and 13 in the pitch conversion layer 20, and the wiring board 30 is reached. It is possible to design the terminal pitch P2 of the external connection terminal 22 which is more suitable for the connection of.
　本実施形態に係る製造方法において、部品封止部材１０の形成工程は、半導体パッケージ１１と電子部品１２及び１３とを支持体１００に貼り付ける工程を含み、支持体１００上に配置された半導体パッケージ１１と電子部品１２及び１３を覆うように保護材料で封止してもよい。このため、半導体パッケージ１１と電子部品１２及び１３とを保護材料で一体化した部品封止部材１０を容易に形成することができる。 In the manufacturing method according to the present embodiment, the step of forming the component sealing member 10 includes a step of attaching the semiconductor package 11 and the electronic components 12 and 13 to the support 100, and the semiconductor package is arranged on the support 100. 11 may be sealed with a protective material so as to cover the electronic components 12 and 13. Therefore, the component sealing member 10 in which the semiconductor package 11 and the electronic components 12 and 13 are integrated with a protective material can be easily formed.
　本実施形態に係る製造方法において、封止部１４を形成する保護材料は、可撓性材料又は電磁波遮蔽性のある材料を含んでもよい。保護材料が可撓性材料を含む場合、製造された電子部品モジュール１を柔軟な構成とすることでき、可撓性の程度により折り曲げ可能な構成とすることも可能である。一方、保護材料が電磁波遮蔽性のある材料を含む場合、電子部品モジュール１に電磁波遮蔽性能を付与することが簡単にできる。 In the manufacturing method according to the present embodiment, the protective material forming the sealing portion 14 may include a flexible material or a material having an electromagnetic wave shielding property. When the protective material contains a flexible material, the manufactured electronic component module 1 can have a flexible configuration, and can also have a bendable configuration depending on the degree of flexibility. On the other hand, when the protective material contains a material having an electromagnetic wave shielding property, it is possible to easily impart the electromagnetic wave shielding performance to the electronic component module 1.
　本実施形態に係る製造方法において、ピッチ変換層２０の形成工程では、上面２０ａ側において接続端子１１ａがめっきにより配線構造２１に電気的に接続されてもよい。接続端子１１ａのピッチは狭ピッチであることが多いが、接続端子１１ａと配線構造２１との電気的な接続を、はんだではなくめっきで行うことにより、両者の微細接続をより確実に実行することが可能となり、この部分での接続不良を低減することができる。 In the manufacturing method according to the present embodiment, in the step of forming the pitch conversion layer 20, the connection terminal 11a may be electrically connected to the wiring structure 21 by plating on the upper surface 20a side. The pitch of the connection terminal 11a is often narrow, but by making the electrical connection between the connection terminal 11a and the wiring structure 21 by plating instead of soldering, fine connection between the two can be performed more reliably. It becomes possible to reduce the connection failure in this part.
　ここで、電子部品モジュール１の製造方法の別の例について、図４を参照して説明する。図４の（ａ）～（ｄ）は、電子部品モジュール１及び電子回路基板２を製造する別の方法であって、図２の工程に続いて行われる別の工程を示す図である。図４に示す方法では、図２の（ａ）～（ｅ）に示す工程により部品封止部材１０が形成された後、支持体１０２上にピッチ変換層２０をまずは形成する。即ち、上述した実施形態と異なり、ピッチ変換層２０を部品封止部材１０上に直接形成しない。この変形例の方法では、支持体１０２上で別途にピッチ変換層２０を形成した後、形成済みのピッチ変換層２０を部品封止部材１０の面１０ａ上に取り付け、部品封止部材１０の下面１０ａから露出する接続端子１１ａ，１２ａ及び１３ａをピッチ変換層２０の接続端子に接続させる。なお、図４の（ｂ）の工程の後の外部接続端子２２の形成工程（図４の（ｃ）を参照）と、電子回路基板２を製造する工程（図４の（ｄ）を参照）は、図３の（ｂ）及び図３の（ｃ）の工程と同様である。 Here, another example of the manufacturing method of the electronic component module 1 will be described with reference to FIG. 4 (a) to 4 (d) are diagrams showing another method for manufacturing the electronic component module 1 and the electronic circuit board 2, which is performed after the step of FIG. In the method shown in FIG. 4, after the component sealing member 10 is formed by the steps shown in FIGS. 2A to 2E, the pitch conversion layer 20 is first formed on the support 102. That is, unlike the above-described embodiment, the pitch conversion layer 20 is not directly formed on the component sealing member 10. In the method of this modification, after the pitch conversion layer 20 is separately formed on the support 102, the formed pitch conversion layer 20 is attached on the surface 10a of the component sealing member 10, and the lower surface of the component sealing member 10 is attached. The connection terminals 11a, 12a and 13a exposed from 10a are connected to the connection terminals of the pitch conversion layer 20. The process of forming the external connection terminal 22 after the step of FIG. 4 (b) (see (c) of FIG. 4) and the step of manufacturing the electronic circuit board 2 (see (d) of FIG. 4). Is the same as the steps of FIG. 3 (b) and FIG. 3 (c).
　また、電子部品モジュール１の製造方法の更に別の例について、図５を参照して説明する。図５の（ａ）～（ｅ）は、電子部品モジュール１、特に部品封止部材１０を製造する更に別の方法を示す図である。図５に示す製造方法では、図５の（ａ）及び（ｂ）に示すように、まず支持体１００を準備すると共に、支持体１００の一方の面に離型層１０３を形成する。離型層１０３は、例えば、シリコン樹脂などから構成される。続いて、図５の（ｃ）に示すように、離型層１０３上に保護材料により封止部１４をまず形成する。この際、上記の実施形態と異なり、半導体パッケージ１１と電子部品１２及び１３は、支持体１００（離型層１０３）上に取り付けられていない。その後、図５の（ｄ）に示すように、各接続端子１１ａ，１２ａ，１３ａが封止部１４の面１４ａから露出するように、封止部１４内に半導体パッケージ１１と電子部品１２及び１３とを埋め込む工程を行う。その後、封止部１４から離型層１０３と共に支持体１００を離型する。これにより、図５の（ｅ）に示す部品封止部材１０を取得する。この後の工程は、図３の（ａ）～（ｃ）に示す工程と同様の構成を行って電子回路基板２を取得する。このような製造方法によっても、上記の実施形態と同様の効果を得ることができる。 Further, another example of the manufacturing method of the electronic component module 1 will be described with reference to FIG. 5 (a) to 5 (e) are views showing still another method for manufacturing the electronic component module 1, particularly the component encapsulating member 10. In the manufacturing method shown in FIG. 5, as shown in FIGS. 5A and 5B, the support 100 is first prepared, and the release layer 103 is formed on one surface of the support 100. The release layer 103 is made of, for example, a silicon resin or the like. Subsequently, as shown in FIG. 5 (c), the sealing portion 14 is first formed on the release layer 103 with a protective material. At this time, unlike the above embodiment, the semiconductor package 11 and the electronic components 12 and 13 are not mounted on the support 100 (release layer 103). After that, as shown in FIG. 5D, the semiconductor package 11 and the electronic components 12 and 13 are contained in the sealing portion 14 so that the connection terminals 11a, 12a, 13a are exposed from the surface 14a of the sealing portion 14. Perform the process of embedding. After that, the support 100 is released from the sealing portion 14 together with the release layer 103. As a result, the component sealing member 10 shown in FIG. 5 (e) is acquired. In the subsequent steps, the electronic circuit board 2 is acquired by performing the same configuration as the steps shown in FIGS. 3 (a) to 3 (c). Even with such a manufacturing method, the same effect as that of the above-described embodiment can be obtained.
　次に、変形例に係る電子部品モジュールの構成及び製造方法について、図６を参照して説明する。図６の（ａ）は、ヒートシンクを備えた電子部品モジュールの一例を示す断面図であり、図６の（ｂ）は、ヒートシンクを備えた電子部品モジュールの別の例を示す断面図である。図６の（ａ）に示すように、電子部品モジュール１Ａでは、部品封止部材１０Ａに封止される部品が半導体ベアチップ１１Ａになっており、また、部品封止部材１０Ａのピッチ変換層２０とは逆の上面１０ｂにヒートシンク４０が更に取り付けられている。放熱部材であるヒートシンクを備えていることにより、電子部品モジュール１Ａでは、半導体ベアチップ１１Ａでの発熱を効率的に放熱することが可能となる。なお、本実施形態に係る電子部品モジュールに含まれる半導体チップとしては半導体パッケージの形態であることが好ましいが、ＬＳＩ等の高集積回路に比べて発熱量の小さいディスクリート半導体など封止材（保護材料）に求められる特性が比較的容易になる場合には、半導体ベアチップ１１Ａを部品封止部材１０内に設けてもよい。 Next, the configuration and manufacturing method of the electronic component module according to the modified example will be described with reference to FIG. FIG. 6A is a cross-sectional view showing an example of an electronic component module provided with a heat sink, and FIG. 6B is a cross-sectional view showing another example of the electronic component module provided with a heat sink. As shown in FIG. 6A, in the electronic component module 1A, the component sealed to the component encapsulation member 10A is a semiconductor bare chip 11A, and the component encapsulating member 10A has a pitch conversion layer 20. A heat sink 40 is further attached to the opposite upper surface 10b. By providing the heat sink which is a heat radiating member, the electronic component module 1A can efficiently dissipate the heat generated by the semiconductor bare chip 11A. The semiconductor chip included in the electronic component module according to this embodiment is preferably in the form of a semiconductor package, but is a sealing material (protective material) such as a discrete semiconductor having a smaller calorific value than a highly integrated circuit such as an LSI. ) Is relatively easy, the semiconductor bare chip 11A may be provided in the component sealing member 10.
　図６の（ｂ）に示すように、電子部品モジュール１Ｂでは、半導体パッケージ１１がヒートシンク４０に直接接続されており、ヒートシンク４０による半導体パッケージ１１の発熱を更に効率的に放熱できるようになっている。このヒートシンク４０を備える電子部品モジュール１Ｂを製造する場合には、図２の（ｄ）に示すように、半導体パッケージ１１等を保護材料で封止した後、半導体パッケージ１１の天面が露出するまで封止部１４を研磨し、露出した天面にヒートシンク４０を接触するように取り付ける。このようなヒートシンク４０を設けた電子部品モジュールによれば、電子部品モジュールに放熱機能を付与することができ、半導体パッケージ１１等の発熱を効率的に放熱することができる。また、放熱を効率的に行うことができるため、半導体パッケージ１１を封止する保護材料として、耐熱性がそれほど高くない安価な材料を用いることも可能となる。 As shown in FIG. 6B, in the electronic component module 1B, the semiconductor package 11 is directly connected to the heat sink 40, so that the heat generated by the heat sink 40 can be dissipated more efficiently. .. When manufacturing the electronic component module 1B provided with the heat sink 40, as shown in FIG. 2D, after sealing the semiconductor package 11 or the like with a protective material, until the top surface of the semiconductor package 11 is exposed. The sealing portion 14 is polished and attached so that the heat sink 40 is in contact with the exposed top surface. According to the electronic component module provided with such a heat sink 40, the electronic component module can be provided with a heat dissipation function, and the heat generated by the semiconductor package 11 or the like can be efficiently dissipated. Further, since heat can be dissipated efficiently, it is possible to use an inexpensive material whose heat resistance is not so high as a protective material for sealing the semiconductor package 11.
　図７の（ａ）及び（ｂ）を参照して、電子部品モジュールの更なる変形例について説明する。図７の（ａ）及び（ｂ）は、電子部品モジュールの変形例を示す断面図である。図７の（ａ）に示すように、この変形例では、部品封止部材１０が形成された後、面１０ａ上に絶縁層１６を設けると共に、保護材料内に昇華性粒子を含有させ、後工程にある加熱工程で昇華性粒子を昇華させて内部に空隙を設けるようにしてもよい。これにより、部品封止部材１０内を空隙により多孔質化させることができる。 A further modification example of the electronic component module will be described with reference to FIGS. 7 (a) and 7 (b). 7 (a) and 7 (b) are cross-sectional views showing a modified example of the electronic component module. As shown in FIG. 7A, in this modification, after the component sealing member 10 is formed, the insulating layer 16 is provided on the surface 10a, and sublimable particles are contained in the protective material. The sublimable particles may be sublimated in the heating step in the step to provide voids inside. As a result, the inside of the component sealing member 10 can be made porous by the voids.
　また、電子部品モジュール１Ｃに搭載する半導体パッケージ１１をＷＬ－ＣＳＰとする場合、端子ピッチＰ１が５０μｍ又はそれ以下となる場合がある。このような場合、例えば、図７の（ｂ）に示すように、部品封止部材１０の上に絶縁層１６ａを形成した後、各電子部品の接続端子上部の絶縁層部分に開口部１７を設け、はんだを用いずにめっき等により回路を設けることで、ピッチ変換層２０を含む電子部品モジュールを形成してもよい。 Further, when the semiconductor package 11 mounted on the electronic component module 1C is a WL-CSP, the terminal pitch P1 may be 50 μm or less. In such a case, for example, as shown in FIG. 7B, after forming the insulating layer 16a on the component sealing member 10, an opening 17 is provided in the insulating layer portion above the connection terminal of each electronic component. The electronic component module including the pitch conversion layer 20 may be formed by providing the circuit by plating or the like without using solder.
　以上、本発明の実施形態について詳細に説明してきたが、本発明は上記実施形態に限定されるものではなく、様々な実施形態に適用することができる。例えば、上記実施形態では、半導体チップを主に用いた電子部品モジュールを例にとって説明してきたが、半導体チップの全部又は一部の機能をチップ部品等により置き換えた電子部品モジュールに本発明を適用してもよい。この場合、上述した部品封止部材の形成工程において、多数の電子部品を保護材料によって封止一体化して部品封止部材を形成する。これにより、上記のモジュール化を利用して、半導体集積回路（ＩＣ）の全部又は一部の機能をチップ部品からなる受動素子などの電子部品で組み替えて回路形成し、使用している半導体集積回路の配線を簡素化し又は半導体集積回路の使用を止めて、接続不良を更に抑制した電子回路部品を製造することができる。 Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above embodiments and can be applied to various embodiments. For example, in the above embodiment, an electronic component module mainly using a semiconductor chip has been described as an example, but the present invention is applied to an electronic component module in which all or a part of the functions of the semiconductor chip are replaced by chip components or the like. You may. In this case, in the process of forming the component sealing member described above, a large number of electronic components are sealed and integrated with a protective material to form the component sealing member. As a result, using the above modularization, all or part of the functions of the semiconductor integrated circuit (IC) are recombined with electronic components such as passive elements made of chip components to form a circuit, and the semiconductor integrated circuit used is used. It is possible to manufacture electronic circuit components with further suppressed connection defects by simplifying the wiring of the above or stopping the use of semiconductor integrated circuits.
　また、上記実施形態は、電子部品モジュールを形成した後、配線基板に接続する方法に関するものであったが、電子部品モジュールを配線基板に接続せずに部品内蔵基板３として用いるようにしてもよい。例えば、図８に示すように、半導体パッケージ１１、電子部品１２，１３，１８等の非常に多数の電子部品を保護材料で封止して部品封止部材１０Ｄを形成すると共に、部品封止部材１０Ｄの半導体パッケージ１１の接続端子１１ａと電子部品１２，１３及び１８の接続端子１２ａ，１３ａとに接続されるピッチ変換層２０を設けて電子部品モジュールとしてもよい。そして、この場合において、ピッチ変換層２０の面２０ｂに接続コネクタ５０，５１を設け、電子部品モジュールを部品内蔵基板３として用いてもよい。接続コネクタ５０，５１は、ピッチ変換層２０に電気的に接続される。なお、ピッチ変換層２０の面２０ｂ上に他の電子部品を設けて、ピッチ変換層２０に電気的に接続するようにしてもよい。 Further, although the above embodiment relates to a method of connecting to a wiring board after forming an electronic component module, the electronic component module may be used as the component built-in board 3 without being connected to the wiring board. .. For example, as shown in FIG. 8, a very large number of electronic components such as a semiconductor package 11, electronic components 12, 13, and 18 are sealed with a protective material to form a component sealing member 10D, and a component sealing member is formed. An electronic component module may be provided by providing a pitch conversion layer 20 connected to the connection terminal 11a of the semiconductor package 11 of 10D and the connection terminals 12a, 13a of the electronic components 12, 13 and 18. In this case, the connection connectors 50 and 51 may be provided on the surface 20b of the pitch conversion layer 20, and the electronic component module may be used as the component built-in substrate 3. The connection connectors 50 and 51 are electrically connected to the pitch conversion layer 20. It should be noted that other electronic components may be provided on the surface 20b of the pitch conversion layer 20 so as to be electrically connected to the pitch conversion layer 20.
　１，１Ａ，１Ｂ，１Ｃ…電子部品モジュール、２…電子回路基板、３…部品内蔵基板、１０，１０Ａ，１０Ｂ，１０Ｃ，１０Ｄ…部品封止部材、１０ａ…下面、１０ｂ…上面、１１…半導体パッケージ、１１Ａ…半導体ベアチップ、１１ａ…接続端子、１２，１３，１８…電子部品、１２ａ，１３ａ…接続端子、１４…封止部、２０…ピッチ変換層、２０ａ…上面、２０ｂ…下面、２１…配線構造、２２…外部接続端子、３０…配線基板、４０…ヒートシンク、５０，５１…接続コネクタ、１００，１０２…支持体、１０１…粘着層、１０３…離型層、Ｐ１，Ｐ２…端子ピッチ。 1,1A, 1B, 1C ... Electronic component module, 2 ... Electronic circuit board, 3 ... Component built-in board, 10,10A, 10B, 10C, 10D ... Component sealing member, 10a ... Bottom surface, 10b ... Top surface, 11 ... Semiconductor Package, 11A ... Semiconductor bare chip, 11a ... Connection terminal, 12, 13, 18 ... Electronic component, 12a, 13a ... Connection terminal, 14 ... Sealing part, 20 ... Pitch conversion layer, 20a ... Top surface, 20b ... Bottom surface, 21 ... Wiring structure, 22 ... external connection terminal, 30 ... wiring board, 40 ... heat sink, 50, 51 ... connection connector, 100, 102 ... support, 101 ... adhesive layer, 103 ... release layer, P1, P2 ... terminal pitch.

Claims (18)

  1. 　第１電子部品と前記第１電子部品とは異なる種類の第２電子部品とを保護材料によって封止一体化した部品封止部材を形成する工程であって、前記第１電子部品の第１接続端子と前記第２電子部品の第２接続端子とが当該部品封止部材から露出するように部品封止部材を形成する工程と、
    　前記部品封止部材から露出する前記第１接続端子及び前記第２接続端子に第１面側で電気的に接続され、前記第１接続端子間の第１端子ピッチを、前記第１面とは逆の第２面側において前記第１端子ピッチとは異なる第２端子ピッチに変換して前記第１接続端子を前記第２端子ピッチで配置された第３接続端子に電気的に接続する配線構造を有するピッチ変換層を形成する工程と、
    を備える、電子部品モジュールの製造方法。     It is a step of forming a component sealing member in which a first electronic component and a second electronic component of a different type from the first electronic component are sealed and integrated with a protective material, and is a first connection of the first electronic component. A step of forming a component sealing member so that the terminal and the second connection terminal of the second electronic component are exposed from the component sealing member.
    The first terminal pitch, which is electrically connected to the first connection terminal and the second connection terminal exposed from the component sealing member on the first surface side and is between the first connection terminals, is referred to as the first surface. A wiring structure that converts the first terminal pitch to a second terminal pitch different from the first terminal pitch on the opposite second surface side and electrically connects the first connection terminal to the third connection terminal arranged at the second terminal pitch. And the process of forming a pitch conversion layer having
    A method of manufacturing an electronic component module.
  2. 　前記ピッチ変換層の形成工程では、前記第２端子ピッチが前記第１端子ピッチよりも広くなるように前記配線構造及び前記第３接続端子を形成する、
    請求項１に記載の電子部品モジュールの製造方法。     In the step of forming the pitch conversion layer, the wiring structure and the third connection terminal are formed so that the second terminal pitch is wider than the first terminal pitch.
    The method for manufacturing an electronic component module according to claim 1.
  3. 　前記第１電子部品が半導体パッケージであり、
    　前記ピッチ変換層の形成工程では、前記第１接続端子の少なくとも一部の端子が前記第２電子部品を介して前記第３接続端子に接続されるように前記配線構造を形成する、
    請求項１又は２に記載の電子部品モジュールの製造方法。     The first electronic component is a semiconductor package.
    In the step of forming the pitch conversion layer, the wiring structure is formed so that at least a part of the terminals of the first connection terminal are connected to the third connection terminal via the second electronic component.
    The method for manufacturing an electronic component module according to claim 1 or 2.
  4. 　前記第１電子部品が半導体パッケージであり、
    　前記半導体パッケージの前記第１端子ピッチの幅が５００μｍ以下である、
    請求項１～３の何れか一項に記載の電子部品モジュールの製造方法。     The first electronic component is a semiconductor package.
    The width of the first terminal pitch of the semiconductor package is 500 μm or less.
    The method for manufacturing an electronic component module according to any one of claims 1 to 3.
  5. 　前記第３接続端子の前記第２端子ピッチの幅が１０００μｍ以上である、
    請求項１～４の何れか一項に記載の電子部品モジュールの製造方法。     The width of the second terminal pitch of the third connection terminal is 1000 μm or more.
    The method for manufacturing an electronic component module according to any one of claims 1 to 4.
  6. 　前記部品封止部材の形成工程では、多数の電子部品を前記第１電子部品及び前記第２電子部品と共に前記保護材料によって封止一体化して前記部品封止部材を形成する、
    請求項１～５の何れか一項に記載の電子部品モジュールの製造方法。     In the process of forming the component sealing member, a large number of electronic components are sealed and integrated together with the first electronic component and the second electronic component by the protective material to form the component sealing member.
    The method for manufacturing an electronic component module according to any one of claims 1 to 5.
  7. 　前記第２電子部品が受動部品である、
    請求項１～６の何れか一項に記載の電子部品モジュールの製造方法。     The second electronic component is a passive component.
    The method for manufacturing an electronic component module according to any one of claims 1 to 6.
  8. 　前記第２電子部品は、長さ１．０ｍｍ以下で且つ幅０．５ｍｍ以下のチップコンデンサ及びチップ抵抗の少なくとも一方を含む、
    請求項７に記載の電子部品モジュールの製造方法。     The second electronic component includes at least one of a chip capacitor and a chip resistor having a length of 1.0 mm or less and a width of 0.5 mm or less.
    The method for manufacturing an electronic component module according to claim 7.
  9. 　前記部品封止部材の形成工程は、前記第１電子部品及び前記第２電子部品を支持体に貼り付ける工程を含み、
    　前記部品封止部材の形成工程では、前記支持体上に配置された前記第１電子部品及び前記第２電子部品を覆うように前記保護材料で封止する、
    請求項１～８の何れか一項に記載の電子部品モジュールの製造方法。     The step of forming the component sealing member includes a step of attaching the first electronic component and the second electronic component to a support.
    In the step of forming the component sealing member, the protective material is used to seal the first electronic component and the second electronic component arranged on the support.
    The method for manufacturing an electronic component module according to any one of claims 1 to 8.
  10. 　前記部品封止部材の形成工程は、前記保護材料を支持体上に形成する工程を含み、
    　前記部品封止部材の形成工程では、前記第１接続端子及び前記第２接続端子が前記保護材料から露出するように前記第１電子部品及び前記第２電子部品を前記保護材料に埋め込み前記部品封止部材を形成する、
    請求項１～９の何れか一項に記載の電子部品モジュールの製造方法。     The step of forming the component sealing member includes a step of forming the protective material on the support.
    In the process of forming the component sealing member, the first electronic component and the second electronic component are embedded in the protective material so that the first connection terminal and the second connection terminal are exposed from the protective material, and the component is sealed. Forming a stop member,
    The method for manufacturing an electronic component module according to any one of claims 1 to 9.
  11. 　前記ピッチ変換層の形成工程では、前記ピッチ変換層に直交する方向から視た際に前記配線構造の一部が前記第１電子部品の設置領域の外側領域に位置するように前記配線構造を形成する、
    請求項１～１０の何れか一項に記載の電子部品モジュールの製造方法。     In the step of forming the pitch conversion layer, the wiring structure is formed so that a part of the wiring structure is located in the outer region of the installation region of the first electronic component when viewed from a direction orthogonal to the pitch conversion layer. do,
    The method for manufacturing an electronic component module according to any one of claims 1 to 10.
  12. 　前記ピッチ変換層の形成工程では、前記ピッチ変換層に直交する方向から視た際に前記配線構造の一部が前記第２電子部品と重なるように前記配線構造を形成する、
    請求項１～１１の何れか一項に記載の電子部品モジュールの製造方法。     In the step of forming the pitch conversion layer, the wiring structure is formed so that a part of the wiring structure overlaps with the second electronic component when viewed from a direction orthogonal to the pitch conversion layer.
    The method for manufacturing an electronic component module according to any one of claims 1 to 11.
  13. 　前記保護材料は、可撓性材料又は電磁波遮蔽性のある材料を含む、
    請求項１～１２の何れか一項に記載の電子部品モジュールの製造方法。     The protective material includes a flexible material or a material having electromagnetic wave shielding property.
    The method for manufacturing an electronic component module according to any one of claims 1 to 12.
  14. 　前記ピッチ変換層の形成工程では、前記第１面側において前記第１接続端子がめっきにより前記配線構造に電気的に接続される、
    請求項１～１３の何れか一項に記載の電子部品モジュールの製造方法。     In the step of forming the pitch conversion layer, the first connection terminal is electrically connected to the wiring structure by plating on the first surface side.
    The method for manufacturing an electronic component module according to any one of claims 1 to 13.
  15. 　前記部品封止部材の前記第１接続端子が露出する面以外の面に放熱部材を設置する工程を更に備える、
    請求項１～１４の何れか一項に記載の電子部品モジュールの製造方法。     Further comprising a step of installing the heat radiating member on a surface other than the surface on which the first connection terminal of the component sealing member is exposed.
    The method for manufacturing an electronic component module according to any one of claims 1 to 14.
  16. 　請求項１～１５の何れか一項に記載の製造方法で製造された前記電子部品モジュールと配線基板とを準備する工程と、
    　前記電子部品モジュールにおける前記ピッチ変換層の前記第３接続端子を前記配線基板上の対応する接続端子に接続するように、前記電子部品モジュールを前記配線基板に実装する工程と、
    を備える、電子回路基板の製造方法。     A step of preparing the electronic component module and the wiring board manufactured by the manufacturing method according to any one of claims 1 to 15.
    A step of mounting the electronic component module on the wiring board so as to connect the third connection terminal of the pitch conversion layer in the electronic component module to the corresponding connection terminal on the wiring board.
    A method of manufacturing an electronic circuit board.
  17. 　前記配線基板は、１層または２層の基板である、
    請求項１６に記載の電子回路基板の製造方法。     The wiring board is a one-layer or two-layer board.
    The method for manufacturing an electronic circuit board according to claim 16.
  18. 　請求項１～１５の何れか一項に記載の製造方法によって製造された前記電子部品モジュールを準備する工程と、
    　前記ピッチ変換層の前記第２面に第３電子部品及び接続コネクタの少なくとも一方を設ける工程と、
    を備える、部品内蔵基板の製造方法。

          A step of preparing the electronic component module manufactured by the manufacturing method according to any one of claims 1 to 15.
    A step of providing at least one of a third electronic component and a connector on the second surface of the pitch conversion layer, and
    A method of manufacturing a board with built-in components.
PCT/JP2020/036645 2020-09-28 2020-09-28 Method for manufacturing electronic component module, method for manufacturing electronic circuit board, and method for manufacturing component built-in board WO2022064698A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019016770A (en) * 2017-07-07 2019-01-31 サムソン エレクトロ−メカニックス カンパニーリミテッド． Fan-out semiconductor package module
US10211141B1 (en) * 2017-11-17 2019-02-19 General Electric Company Semiconductor logic device and system and method of embedded packaging of same
JP2019083304A (en) * 2017-10-27 2019-05-30 サムソン エレクトロ−メカニックス カンパニーリミテッド． Fan-out semiconductor package module
JP2019161214A (en) * 2018-03-15 2019-09-19 サムスン エレクトロニクス カンパニー リミテッド Semiconductor package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019016770A (en) * 2017-07-07 2019-01-31 サムソン エレクトロ−メカニックス カンパニーリミテッド． Fan-out semiconductor package module
JP2019083304A (en) * 2017-10-27 2019-05-30 サムソン エレクトロ−メカニックス カンパニーリミテッド． Fan-out semiconductor package module
US10211141B1 (en) * 2017-11-17 2019-02-19 General Electric Company Semiconductor logic device and system and method of embedded packaging of same
JP2019161214A (en) * 2018-03-15 2019-09-19 サムスン エレクトロニクス カンパニー リミテッド Semiconductor package

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