WO2022059488A1 - Method for producing nitride semiconductor wafer - Google Patents
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- WO2022059488A1 WO2022059488A1 PCT/JP2021/032147 JP2021032147W WO2022059488A1 WO 2022059488 A1 WO2022059488 A1 WO 2022059488A1 JP 2021032147 W JP2021032147 W JP 2021032147W WO 2022059488 A1 WO2022059488 A1 WO 2022059488A1
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Abstract
The present invention provides a method for producing a nitride semiconductor wafer, wherein a nitride semiconductor film is formed on a silicon single crystal substrate, said method comprising: a step wherein the nitride semiconductor film is formed on the silicon single crystal substrate using, as the silicon single crystal substrate, a substrate that has a resistivity of 100 Ωcm or more; and a step wherein the silicon single crystal substrate is irradiated with an electron beam. Consequently, the present invention provides a method for producing a nitride semiconductor wafer, said method ameliorating and improving the second and third harmonic characteristics, while suppressing deterioration in the characteristics with respect to a nitride semiconductor wafer which is obtained by forming a nitride semiconductor film on a silicon single crystal substrate.
Description
本発明は、窒化物半導体ウェーハの製造方法に関する。
The present invention relates to a method for manufacturing a nitride semiconductor wafer.
高周波デバイスの小型化、低コスト化に向けて、アンテナやアンプ、スイッチ、フィルター等のデバイスをインテグレーションする開発が進められている。また、周波数の高周波化に従い、回路が複雑化し、使用されるデバイスも、シリコンＣＭＯＳ、ＩＩＩ－Ｖ族半導体や窒化物半導体を用いたデバイス、圧電体を用いたフィルターなど多岐にわたっている。これらのデバイスの下地となる基板として、安価で大口径のウェーハが流通しているシリコン単結晶基板が適している。
Development is underway to integrate devices such as antennas, amplifiers, switches, and filters in order to reduce the size and cost of high-frequency devices. Further, as the frequency becomes higher, the circuit becomes more complicated, and the devices used are various, such as silicon CMOS, devices using III-V semiconductors and nitride semiconductors, and filters using piezoelectric materials. A silicon single crystal substrate on which inexpensive and large-diameter wafers are distributed is suitable as a substrate as a base for these devices.
しかし、上記のような高周波デバイスでは、基板起因の特性劣化、基板による損失及び第２・第３高調波特性劣化がみられる。
ここで、高調波とは、元となる周波数の整数倍の高次の周波数成分のことである。元の周波数を基本波とし、基本波の２倍の周波数（２分の１の波長）を持つものが第２高調波、基本波の３倍の周波数（３分の１の波長）を持つものが第３高調波と定義されている。高周波回路では、高調波による混信を避けるために高調波の小さい基板が必要とされる。 However, in the high frequency device as described above, characteristic deterioration due to the substrate, loss due to the substrate, and deterioration of the second and third harmonic characteristics are observed.
Here, the harmonic is a high-order frequency component that is an integral multiple of the original frequency. The original frequency is the fundamental wave, and the one with twice the frequency (1/2 wavelength) of the fundamental wave is the second harmonic, and the one with three times the frequency (one third wavelength) of the fundamental wave. Is defined as the third harmonic. In high frequency circuits, a substrate with small harmonics is required to avoid interference due to harmonics.
ここで、高調波とは、元となる周波数の整数倍の高次の周波数成分のことである。元の周波数を基本波とし、基本波の２倍の周波数（２分の１の波長）を持つものが第２高調波、基本波の３倍の周波数（３分の１の波長）を持つものが第３高調波と定義されている。高周波回路では、高調波による混信を避けるために高調波の小さい基板が必要とされる。 However, in the high frequency device as described above, characteristic deterioration due to the substrate, loss due to the substrate, and deterioration of the second and third harmonic characteristics are observed.
Here, the harmonic is a high-order frequency component that is an integral multiple of the original frequency. The original frequency is the fundamental wave, and the one with twice the frequency (1/2 wavelength) of the fundamental wave is the second harmonic, and the one with three times the frequency (one third wavelength) of the fundamental wave. Is defined as the third harmonic. In high frequency circuits, a substrate with small harmonics is required to avoid interference due to harmonics.
特許文献１には、パワー用途のワイドギャップバイポーラ半導体に、予めγ線、電子線、荷電粒子線の１つを照射して、キャリア寿命を所定の範囲になるように調整することで、スイッチング特性を向上させることが記載されているが、第２・第３高調波特性の劣化については言及されていない。
Patent Document 1 describes switching characteristics by irradiating a wide-gap bipolar semiconductor for power use with one of γ-rays, electron beams, and charged particle beams in advance to adjust the carrier life within a predetermined range. However, there is no mention of deterioration of the second and third harmonic characteristics.
本発明は、上記問題を解決するためになされたものであり、シリコン単結晶基板上に窒化物半導体膜が形成された窒化物半導体ウェーハにおいて、第２・第３高調波特性を改善、向上し、特性劣化が抑制された窒化物半導体ウェーハの製造方法を提供することを目的とする。
The present invention has been made to solve the above problems, and to improve and improve the second and third harmonic characteristics in a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single crystal substrate. An object of the present invention is to provide a method for manufacturing a nitride semiconductor wafer in which deterioration of characteristics is suppressed.
本発明は、上記目的を達成するためになされたものであり、シリコン単結晶基板の上に窒化物半導体膜を形成する窒化物半導体ウェーハの製造方法であって、前記シリコン単結晶基板として、抵抗率が１００Ωｃｍ以上であるのものを用いて、前記シリコン単結晶基板の上に前記窒化物半導体膜を形成する工程と、前記シリコン単結晶基板に電子線を照射する工程とを含む窒化物半導体ウェーハの製造方法を提供する。
The present invention has been made to achieve the above object, and is a method for manufacturing a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single crystal substrate, wherein the silicon single crystal substrate has a resistance. A nitride semiconductor wafer including a step of forming the nitride semiconductor film on the silicon single crystal substrate and a step of irradiating the silicon single crystal substrate with an electron beam using a wafer having a ratio of 100 Ωcm or more. Provides a manufacturing method for.
このような窒化物半導体ウェーハの製造方法によれば、抵抗率が１００Ωｃｍ以上のシリコン単結晶基板に電子線を照射することで、第２・第３高調波特性を改善、向上し、特性劣化が抑制された窒化物半導体ウェーハを製造することができる。
According to such a method for manufacturing a nitride semiconductor wafer, by irradiating a silicon single crystal substrate having a resistivity of 100 Ωcm or more with an electron beam, the second and third harmonic characteristics are improved and improved, and the characteristics are deteriorated. It is possible to manufacture a nitride semiconductor wafer in which the amount of wafer is suppressed.
このとき、前記電子線を照射する工程を、前記窒化物半導体膜を形成する工程の前に行うことができる。
At this time, the step of irradiating the electron beam can be performed before the step of forming the nitride semiconductor film.
また、このとき、前記電子線を照射する工程を、前記窒化物半導体膜を形成する工程の後に行うことができる。
Further, at this time, the step of irradiating the electron beam can be performed after the step of forming the nitride semiconductor film.
このように、シリコン単結晶基板に電子線を照射することができれば、電子線の照射は、窒化物半導体膜を形成する工程の前に行うこともできるし、後に行うこともできる。
If the silicon single crystal substrate can be irradiated with the electron beam in this way, the electron beam can be irradiated before or after the step of forming the nitride semiconductor film.
以上のように、本発明に係る窒化物半導体ウェーハの製造方法によれば、高周波デバイスに用いるようなシリコン単結晶基板上に、窒化物半導体膜が形成された窒化物半導体ウェーハにおいて、第２・第３高調波特性を改善、向上し、特性劣化を抑制することが可能となる。
As described above, according to the method for manufacturing a nitride semiconductor wafer according to the present invention, in a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single crystal substrate as used for a high frequency device, the second. It is possible to improve and improve the third harmonic characteristic and suppress the deterioration of the characteristic.
以下、本発明を詳細に説明するが、本発明はこれらに限定されるものではない。
Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.
上述のように、シリコン単結晶基板上に窒化物半導体膜が形成された窒化物半導体ウェーハにおいて、第２・第３高調波特性を改善、向上し、特性劣化が抑制された窒化物半導体ウェーハの製造方法が求められていた。
As described above, in a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single crystal substrate, the second and third harmonic characteristics are improved and improved, and the deterioration of the characteristics is suppressed. There was a demand for a manufacturing method for.
本発明者らは、上記課題について鋭意検討を重ねた結果、シリコン単結晶基板の上に窒化物半導体膜を形成する窒化物半導体ウェーハの製造方法であって、前記シリコン単結晶基板として、抵抗率が１００Ωｃｍ以上であるのものを用いて、前記シリコン単結晶基板の上に前記窒化物半導体膜を形成する工程と、前記シリコン単結晶基板に電子線を照射する工程とを含む窒化物半導体ウェーハの製造方法により、第２・第３高調波特性を改善、向上し、特性劣化が抑制された窒化物半導体ウェーハを製造することができることを見出し、本発明を完成した。
As a result of diligent studies on the above problems, the present inventors are a method for manufacturing a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single crystal substrate, and the resistance of the silicon single crystal substrate is high. A nitride semiconductor wafer including a step of forming the nitride semiconductor film on the silicon single crystal substrate and a step of irradiating the silicon single crystal substrate with an electron beam using a wafer having a size of 100 Ωcm or more. We have found that it is possible to manufacture a nitride semiconductor wafer in which the second and third harmonic characteristics are improved and improved and the deterioration of the characteristics is suppressed by the manufacturing method, and the present invention has been completed.
以下、図面を参照して説明する。
Below, it will be explained with reference to the drawings.
本発明の窒化物半導体ウェーハの製造方法について図１を用いて説明する。なお、以下の窒化物半導体ウェーハの構造は一例であって、これに限定されるものではない。
The method for manufacturing the nitride semiconductor wafer of the present invention will be described with reference to FIG. The following structure of the nitride semiconductor wafer is an example, and is not limited thereto.
最初に、抵抗率が１００Ωｃｍ以上のシリコン単結晶基板を準備する。本発明者らは、後述の実施例、比較例で具体的なデータを用いて説明するように、シリコン単結晶基板として抵抗率が１００Ωｃｍ以上のものを用いることで、シリコン単結晶基板に電子線（ＥＢ）を照射したときに、第２・第３高調波特性を改善することが可能となることを見出した。抵抗率の上限は特に限定されず、抵抗率が大きいほど本発明に係る窒化物半導体ウェーハの製造方法に適しているが、基板の高抵抗率化は非常に難しいため、例えば１００００Ωｃｍを上限とすることができる。
First, prepare a silicon single crystal substrate with a resistivity of 100 Ωcm or more. As will be described using specific data in Examples and Comparative Examples described later, the present inventors have used a silicon single crystal substrate having a resistivity of 100 Ωcm or more to form an electron beam on the silicon single crystal substrate. It has been found that it is possible to improve the second and third harmonic characteristics when irradiated with (EB). The upper limit of the resistivity is not particularly limited, and the larger the resistivity is, the more suitable it is for the method for manufacturing a nitride semiconductor wafer according to the present invention. be able to.
次に、このシリコン単結晶基板に電子線照射を行う。電子線を照射することで、シリコン単結晶基板中のドーパント及び／又は原料由来の不純物等のキャリアを不活性化させることによる効果が顕著に得られる。ここでの不活性化は、すなわち、電子線を照射することで、シリコン単結晶基板中に点欠陥が形成され、これらがシリコン単結晶基板中のキャリアをトラップするといった、点欠陥とドーパント及び／又はキャリアの反応による。また、点欠陥によってドーパント及び／又はキャリアの移動度が低下することで抵抗が変化すると考えられる。シリコン単結晶基板中のドーパント及び／又はキャリアを不活性化させた結果、シリコン単結晶基板が高抵抗率化すると考えられる。また、窒化物半導体膜を形成した後に電子線を照射する場合、上記効果に加え、窒化物半導体膜中の点欠陥が減少し、特性が向上するものと考えられる。
Next, the silicon single crystal substrate is irradiated with an electron beam. By irradiating with an electron beam, the effect of inactivating carriers such as dopants and / or impurities derived from raw materials in the silicon single crystal substrate can be remarkably obtained. The inactivation here is that the irradiation of the electron beam causes the point defects to be formed in the silicon single crystal substrate, and these trap the carriers in the silicon single crystal substrate. Or it depends on the reaction of the carrier. Further, it is considered that the resistance changes due to the decrease in the mobility of the dopant and / or the carrier due to the point defect. As a result of inactivating the dopant and / or carrier in the silicon single crystal substrate, it is considered that the silicon single crystal substrate has a high resistivity. Further, when the electron beam is irradiated after forming the nitride semiconductor film, it is considered that, in addition to the above effects, the point defects in the nitride semiconductor film are reduced and the characteristics are improved.
電子線の照射条件は特に限定されず、例えば、２５０ｋｅＶ以上のエネルギーをもつ電子を用いることができる。約２５０ｋｅＶ以上であれば、より確実にシリコン単結晶基板中に点欠陥を形成でき、シリコン単結晶基板中のドーパント及び／又は原料由来の不純物等のキャリアを不活性化させることができる。なお、照射エネルギーの上限は特に問わない。
The irradiation conditions of the electron beam are not particularly limited, and for example, electrons having an energy of 250 keV or more can be used. When it is about 250 keV or more, point defects can be more reliably formed in the silicon single crystal substrate, and carriers such as dopants and / or raw material-derived impurities in the silicon single crystal substrate can be inactivated. The upper limit of irradiation energy is not particularly limited.
照射線量は、例えば１×１０１３／ｃｍ２以上、１×１０１６／ｃｍ２以下とすることができる。照射量を１×１０１３／ｃｍ２以上とすることで、シリコン単結晶基板中に十分な量の点欠陥を安定して発生させることができる。また、照射量を１×１０１６／ｃｍ２以下とすることで、照射に要する時間が長くなりすぎることがないため、効率的である。例えば、２ＭｅＶ、１×１０１５／ｃｍ２の電子線照射を行うことができる。また、電子線は、シリコン単結晶基板表面の全面に照射してもよい。なお、シリコン単結晶基板に電子線を照射することができれば、この電子線照射は窒化物半導体膜を形成した後に行うこともできる。窒化物半導体膜として複数層の窒化物半導体層を形成する場合には、複数層の窒化物半導体層の形成の間に電子線照射を行ってもよい。窒化物半導体膜を形成した後に電子線照射を行う場合、デバイス作製の前に行うこともできるし、後に行うこともできる。
The irradiation dose can be, for example, 1 × 10 13 / cm 2 or more and 1 × 10 16 / cm 2 or less. By setting the irradiation amount to 1 × 10 13 / cm 2 or more, a sufficient amount of point defects can be stably generated in the silicon single crystal substrate. Further, by setting the irradiation amount to 1 × 10 16 / cm 2 or less, the time required for irradiation does not become too long, which is efficient. For example, 2MeV, 1 × 10 15 / cm 2 electron beam irradiation can be performed. Further, the electron beam may irradiate the entire surface of the silicon single crystal substrate surface. If the silicon single crystal substrate can be irradiated with an electron beam, this electron beam irradiation can also be performed after the nitride semiconductor film is formed. When forming a plurality of nitride semiconductor layers as the nitride semiconductor film, electron beam irradiation may be performed between the formation of the plurality of nitride semiconductor layers. When the electron beam irradiation is performed after the nitride semiconductor film is formed, it can be performed before or after the device is manufactured.
このように、電子線を照射して、ドーパント及び／又はキャリアを減少させる（シリコン単結晶基板を高抵抗率化する）ことで、高周波を印加したときに、高周波に追従するキャリアがなくなり、高調波が減少すると考えられる。
In this way, by irradiating the electron beam to reduce the dopant and / or carriers (increasing the resistivity of the silicon single crystal substrate), when a high frequency is applied, there are no carriers that follow the high frequency, and the harmonics are reduced. It is thought that the waves will decrease.
次に窒化物半導体膜をエピタキシャル成長により形成する。形成する窒化物半導体膜は特に限定されず、少なくとも１層の窒化物半導体層を含んでいれば、単層でも複数層でもよい。例えば、窒化物半導体膜として複数層の窒化物半導体層を形成する場合には、図１に示すように、最初に中間層を形成し、次にデバイス層を形成することができる。中間層として、シリコン単結晶基板の上に例えば厚さ１５０ｎｍのＡｌＮ層を形成し、その上に例えば厚さ１６０ｎｍのＡｌＧａＮ層を形成し、更にその上に例えばＧａＮ層とＡｌＮ層が交互に７０組積層された超格子層を形成することができる。
中間層の上に形成することができるデバイス層として、中間層の上に例えば厚さ８００ｎｍのＧａＮ層を形成し、その上に例えば厚さ２５ｎｍのＡｌＧａＮ層を形成し、更にその上に例えば厚さ３ｎｍのＧａＮ層を形成することができる。 Next, a nitride semiconductor film is formed by epitaxial growth. The nitride semiconductor film to be formed is not particularly limited, and may be a single layer or a plurality of layers as long as it includes at least one nitride semiconductor layer. For example, when forming a plurality of nitride semiconductor layers as a nitride semiconductor film, as shown in FIG. 1, an intermediate layer can be formed first, and then a device layer can be formed. As an intermediate layer, an AlN layer having a thickness of, for example, 150 nm is formed on a silicon single crystal substrate, an AlGaN layer having a thickness of, for example, 160 nm is formed on the AlN layer, and an AlGaN layer having a thickness of 160 nm is alternately formed on the AlGaN layer. It is possible to form a superlattice layer in which a set is laminated.
As a device layer that can be formed on the intermediate layer, a GaN layer having a thickness of, for example, 800 nm is formed on the intermediate layer, an AlGaN layer having a thickness of, for example, 25 nm is formed on the intermediate layer, and then, for example, the thickness is further formed. A 3 nm GaN layer can be formed.
中間層の上に形成することができるデバイス層として、中間層の上に例えば厚さ８００ｎｍのＧａＮ層を形成し、その上に例えば厚さ２５ｎｍのＡｌＧａＮ層を形成し、更にその上に例えば厚さ３ｎｍのＧａＮ層を形成することができる。 Next, a nitride semiconductor film is formed by epitaxial growth. The nitride semiconductor film to be formed is not particularly limited, and may be a single layer or a plurality of layers as long as it includes at least one nitride semiconductor layer. For example, when forming a plurality of nitride semiconductor layers as a nitride semiconductor film, as shown in FIG. 1, an intermediate layer can be formed first, and then a device layer can be formed. As an intermediate layer, an AlN layer having a thickness of, for example, 150 nm is formed on a silicon single crystal substrate, an AlGaN layer having a thickness of, for example, 160 nm is formed on the AlN layer, and an AlGaN layer having a thickness of 160 nm is alternately formed on the AlGaN layer. It is possible to form a superlattice layer in which a set is laminated.
As a device layer that can be formed on the intermediate layer, a GaN layer having a thickness of, for example, 800 nm is formed on the intermediate layer, an AlGaN layer having a thickness of, for example, 25 nm is formed on the intermediate layer, and then, for example, the thickness is further formed. A 3 nm GaN layer can be formed.
高調波特性の測定、評価のために、図２に示すようなＣＰＷ（Ｃｏ－Ｐｌａｎａｒ Ｗａｖｅｇｕｉｄｅ）のＡｌ電極を形成することができる。窒化物半導体膜をエピタキシャル成長により形成して作製した窒化物半導体ウェーハを成膜装置から取り出し、ウェーハ上に絶縁膜を形成し、フォトリソグラフィーにより、この絶縁膜上にＣＰＷのＡｌ電極を形成する。
A CPW (Co-Planar Waveguide) Al electrode as shown in FIG. 2 can be formed for measurement and evaluation of harmonic characteristics. A nitride semiconductor wafer produced by forming a nitride semiconductor film by epitaxial growth is taken out from a film forming apparatus, an insulating film is formed on the wafer, and a CPW Al electrode is formed on the insulating film by photolithography.
ＣＰＷは、金属電極を隙間を開けて並列に並べて、その隙間の中央にこれら金属電極と並列に、線状の中央金属電極を形成した構造を持つ。図２に示す一例では、金属電極の中央に線状の隙間を空けて、この隙間の中央に線状の電極を、外側の金属電極に触れないように形成した構造となっている。
ＣＰＷは、このような構造で、中央金属電極から左右両側の金属電極及び半導体基板内部に向かう方向の電界と、半導体基板内部において中央金属電極を囲む方向の磁界によって電磁波を伝送する。ＣＰＷをウェーハ上に形成すれば、高調波特性を測定することができる。ＣＰＷを用いれば、高調波特性（Ｈａｒｍｏｎｉｃ Ｄｉｓｔｏｒｔｉｏｎ：ＨＤ）を測定することができる。 CPW has a structure in which metal electrodes are arranged in parallel with a gap, and a linear central metal electrode is formed in parallel with these metal electrodes in the center of the gap. In the example shown in FIG. 2, a linear gap is provided in the center of the metal electrode, and the linear electrode is formed in the center of the gap so as not to touch the outer metal electrode.
With such a structure, CPW transmits electromagnetic waves by an electric field in the direction from the central metal electrode toward the metal electrodes on both the left and right sides and the inside of the semiconductor substrate, and a magnetic field in the direction surrounding the central metal electrode inside the semiconductor substrate. If CPW is formed on the wafer, the harmonic characteristics can be measured. Harmonic Distortion (HD) can be measured by using CPW.
ＣＰＷは、このような構造で、中央金属電極から左右両側の金属電極及び半導体基板内部に向かう方向の電界と、半導体基板内部において中央金属電極を囲む方向の磁界によって電磁波を伝送する。ＣＰＷをウェーハ上に形成すれば、高調波特性を測定することができる。ＣＰＷを用いれば、高調波特性（Ｈａｒｍｏｎｉｃ Ｄｉｓｔｏｒｔｉｏｎ：ＨＤ）を測定することができる。 CPW has a structure in which metal electrodes are arranged in parallel with a gap, and a linear central metal electrode is formed in parallel with these metal electrodes in the center of the gap. In the example shown in FIG. 2, a linear gap is provided in the center of the metal electrode, and the linear electrode is formed in the center of the gap so as not to touch the outer metal electrode.
With such a structure, CPW transmits electromagnetic waves by an electric field in the direction from the central metal electrode toward the metal electrodes on both the left and right sides and the inside of the semiconductor substrate, and a magnetic field in the direction surrounding the central metal electrode inside the semiconductor substrate. If CPW is formed on the wafer, the harmonic characteristics can be measured. Harmonic Distortion (HD) can be measured by using CPW.
このような本発明に係る窒化物半導体ウェーハの製造方法によれば、製造された高周波デバイスは第２・第３高調波特性を改善、向上し、特性劣化が抑制されたものとすることができる。
According to the method for manufacturing a nitride semiconductor wafer according to the present invention, the manufactured high-frequency device can improve and improve the second and third harmonic characteristics and suppress the deterioration of the characteristics. can.
以下、実施例を挙げて本発明について具体的に説明するが、これは本発明を限定するものではない。
Hereinafter, the present invention will be specifically described with reference to examples, but this does not limit the present invention.
（実施例）
抵抗率の異なるシリコン単結晶基板を２種類（１００Ωｃｍ、６０００Ωｃｍ）準備した。上記、２種類のシリコン単結晶基板上に中間層として、図１に示すような、シリコン単結晶基板上に厚さ１５０ｎｍのＡｌＮ層を形成し、その上に厚さ１６０ｎｍのＡｌＧａＮ層を形成し、更にその上にＧａＮ層とＡｌＮ層が交互に７０組積層された超格子層を形成した。次にデバイス層として、厚さ８００ｎｍのＧａＮ層を形成し、その上に厚さ２５ｎｍのＡｌＧａＮ層を形成し、更にその上に厚さ３ｎｍのＧａＮ層を形成した。エピタキシャル成長により窒化物半導体膜を形成した窒化物半導体ウェーハを成膜装置から取り出し、ウェーハ上に絶縁膜を形成して、フォトリソグラフィーにより、図２に示すようなＣＰＷのＡｌ電極（路線長：２１９９μｍ）を形成した。 (Example)
Two types (100 Ωcm and 6000 Ωcm) of silicon single crystal substrates having different resistivitys were prepared. As an intermediate layer on the above two types of silicon single crystal substrates, an AlN layer having a thickness of 150 nm is formed on the silicon single crystal substrate as shown in FIG. 1, and an AlGaN layer having a thickness of 160 nm is formed on the AlN layer. Further, 70 sets of GaN layers and AlN layers were alternately laminated on the superlattice layer. Next, as a device layer, a GaN layer having a thickness of 800 nm was formed, an AlGaN layer having a thickness of 25 nm was formed on the GaN layer, and a GaN layer having a thickness of 3 nm was further formed on the AlGaN layer. The nitride semiconductor wafer on which the nitride semiconductor film is formed by epitaxial growth is taken out from the film forming apparatus, an insulating film is formed on the wafer, and the CPW Al electrode (line length: 2199 μm) as shown in FIG. 2 is subjected to photolithography. Formed.
抵抗率の異なるシリコン単結晶基板を２種類（１００Ωｃｍ、６０００Ωｃｍ）準備した。上記、２種類のシリコン単結晶基板上に中間層として、図１に示すような、シリコン単結晶基板上に厚さ１５０ｎｍのＡｌＮ層を形成し、その上に厚さ１６０ｎｍのＡｌＧａＮ層を形成し、更にその上にＧａＮ層とＡｌＮ層が交互に７０組積層された超格子層を形成した。次にデバイス層として、厚さ８００ｎｍのＧａＮ層を形成し、その上に厚さ２５ｎｍのＡｌＧａＮ層を形成し、更にその上に厚さ３ｎｍのＧａＮ層を形成した。エピタキシャル成長により窒化物半導体膜を形成した窒化物半導体ウェーハを成膜装置から取り出し、ウェーハ上に絶縁膜を形成して、フォトリソグラフィーにより、図２に示すようなＣＰＷのＡｌ電極（路線長：２１９９μｍ）を形成した。 (Example)
Two types (100 Ωcm and 6000 Ωcm) of silicon single crystal substrates having different resistivitys were prepared. As an intermediate layer on the above two types of silicon single crystal substrates, an AlN layer having a thickness of 150 nm is formed on the silicon single crystal substrate as shown in FIG. 1, and an AlGaN layer having a thickness of 160 nm is formed on the AlN layer. Further, 70 sets of GaN layers and AlN layers were alternately laminated on the superlattice layer. Next, as a device layer, a GaN layer having a thickness of 800 nm was formed, an AlGaN layer having a thickness of 25 nm was formed on the GaN layer, and a GaN layer having a thickness of 3 nm was further formed on the AlGaN layer. The nitride semiconductor wafer on which the nitride semiconductor film is formed by epitaxial growth is taken out from the film forming apparatus, an insulating film is formed on the wafer, and the CPW Al electrode (line length: 2199 μm) as shown in FIG. 2 is subjected to photolithography. Formed.
次に、電子線照射前後の高調波特性の比較のために、まず、電子線照射前の窒化物半導体ウェーハの各素子の第２高調波特性（２ＨＤ）、第３高調波特性（３ＨＤ）を測定した。
高調波特性の測定後、電子線照射を行った。電子線照射（２ＭｅＶ、１×１０１５／ｃｍ２）は日新電機（ＮＨＶコーポレーション３０００ｋＶ機）で行なった。
次に、電子線照射後の窒化物半導体ウェーハの各素子の第２高調波特性（２ＨＤ）、第３高調波特性（３ＨＤ）を測定した。 Next, in order to compare the harmonic characteristics before and after the electron beam irradiation, first, the second harmonic characteristics (2HD) and the third harmonic characteristics (2HD) of each element of the nitride semiconductor wafer before the electron beam irradiation ( 3HD) was measured.
After measuring the harmonic characteristics, electron beam irradiation was performed. The electron beam irradiation (2MeV, 1 × 10 15 / cm 2 ) was performed by Nissin Electric Co., Ltd. (NHV Corporation 3000kV machine).
Next, the second harmonic characteristics (2HD) and the third harmonic characteristics (3HD) of each element of the nitride semiconductor wafer after electron beam irradiation were measured.
高調波特性の測定後、電子線照射を行った。電子線照射（２ＭｅＶ、１×１０１５／ｃｍ２）は日新電機（ＮＨＶコーポレーション３０００ｋＶ機）で行なった。
次に、電子線照射後の窒化物半導体ウェーハの各素子の第２高調波特性（２ＨＤ）、第３高調波特性（３ＨＤ）を測定した。 Next, in order to compare the harmonic characteristics before and after the electron beam irradiation, first, the second harmonic characteristics (2HD) and the third harmonic characteristics (2HD) of each element of the nitride semiconductor wafer before the electron beam irradiation ( 3HD) was measured.
After measuring the harmonic characteristics, electron beam irradiation was performed. The electron beam irradiation (2MeV, 1 × 10 15 / cm 2 ) was performed by Nissin Electric Co., Ltd. (NHV Corporation 3000kV machine).
Next, the second harmonic characteristics (2HD) and the third harmonic characteristics (3HD) of each element of the nitride semiconductor wafer after electron beam irradiation were measured.
（比較例）
抵抗率の異なるシリコン単結晶基板を２種類（８ｍΩｃｍ、５Ωｃｍ）準備したこと以外は実施例と同様に、シリコン単結晶基板上に窒化物半導体膜を形成し、ＣＰＷを形成し、電子線を照射し、電子線照射の前後で高調波特性の測定を行った。 (Comparative example)
Nitride semiconductor film is formed on the silicon single crystal substrate, CPW is formed, and electron beam is irradiated, except that two types (8 mΩcm, 5Ωcm) of silicon single crystal substrates having different resistivitys are prepared. Then, the harmonic characteristics were measured before and after the electron beam irradiation.
抵抗率の異なるシリコン単結晶基板を２種類（８ｍΩｃｍ、５Ωｃｍ）準備したこと以外は実施例と同様に、シリコン単結晶基板上に窒化物半導体膜を形成し、ＣＰＷを形成し、電子線を照射し、電子線照射の前後で高調波特性の測定を行った。 (Comparative example)
Nitride semiconductor film is formed on the silicon single crystal substrate, CPW is formed, and electron beam is irradiated, except that two types (8 mΩcm, 5Ωcm) of silicon single crystal substrates having different resistivitys are prepared. Then, the harmonic characteristics were measured before and after the electron beam irradiation.
測定の結果を図３、図４に示す。図３は、各抵抗率の基板の第２高調波特性を示すグラフである。図４は、各抵抗率の基板の第３高調波特性を示すグラフである。これらのグラフで縦軸のマイナスの値が大きい程、良好であることを意味する。図３、図４に示すように、シリコン単結晶基板の抵抗率が１０Ωｃｍ以下の窒化物半導体ウェーハでは、第２・第３高調波特性に、電子線照射による変化はみられなかったが、シリコン単結晶基板の抵抗率が１００Ωｃｍ以上の窒化物半導体ウェーハでは、第２・第３高調波損失に改善がみられた。図３に示したように、特に、シリコン単結晶基板の抵抗率が６０００Ωｃｍの高抵抗率基板の第２高調波では１５ｄＢｍ（ｄＢｍ＝１０×ｌｏｇ［ｍＷ］）の改善がなされ、また、図４に示したように、シリコン単結晶基板の抵抗率が６０００Ωｃｍの高抵抗率基板の第３高調波では４０ｄＢｍの改善がなされることが明らかとなった。
The measurement results are shown in FIGS. 3 and 4. FIG. 3 is a graph showing the second harmonic characteristics of the substrate of each resistivity. FIG. 4 is a graph showing the third harmonic characteristics of the substrate of each resistivity. The larger the negative value on the vertical axis in these graphs, the better. As shown in FIGS. 3 and 4, in the nitride semiconductor wafer having a resistance of 10 Ωcm or less on the silicon single crystal substrate, the second and third harmonic characteristics did not change due to electron beam irradiation. In the nitride semiconductor wafer having a resistance of 100 Ωcm or more on the silicon single crystal substrate, improvement was observed in the second and third harmonic losses. As shown in FIG. 3, the improvement of 15 dBm (dBm = 10 × log [mW]) was made especially in the second harmonic of the high resistivity substrate of the silicon single crystal substrate having the resistivity of 6000 Ωcm, and FIG. 4 As shown in the above, it was clarified that the improvement of 40 dBm is achieved in the third harmonic of the high resistivity substrate of the silicon single crystal substrate having the resistivity of 6000 Ωcm.
以上のように、本発明に係る窒化物半導体ウェーハの製造方法によれば、第２・第３高調波特性を改善、向上し、特性劣化が抑制された窒化物半導体ウェーハを製造できることが分かった。
As described above, it has been found that according to the method for manufacturing a nitride semiconductor wafer according to the present invention, it is possible to manufacture a nitride semiconductor wafer in which the second and third harmonic characteristics are improved and improved and the deterioration of the characteristics is suppressed. rice field.
なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。
The present invention is not limited to the above embodiment. The above-described embodiment is an example, and the present invention can be anything that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits the same function and effect. Is included in the technical scope of.
Claims (3)
- シリコン単結晶基板の上に窒化物半導体膜を形成する窒化物半導体ウェーハの製造方法であって、前記シリコン単結晶基板として、抵抗率が１００Ωｃｍ以上であるのものを用いて、前記シリコン単結晶基板の上に前記窒化物半導体膜を形成する工程と、前記シリコン単結晶基板に電子線を照射する工程とを含むことを特徴とする窒化物半導体ウェーハの製造方法。 A method for manufacturing a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single crystal substrate, wherein the silicon single crystal substrate having a resistance of 100 Ωcm or more is used, and the silicon single crystal substrate is used. A method for manufacturing a nitride semiconductor wafer, which comprises a step of forming the nitride semiconductor film on the wafer and a step of irradiating the silicon single crystal substrate with an electron beam.
- 前記電子線を照射する工程を、前記窒化物半導体膜を形成する工程の前に行うことを特徴とする請求項１に記載の窒化物半導体ウェーハの製造方法。 The method for manufacturing a nitride semiconductor wafer according to claim 1, wherein the step of irradiating the electron beam is performed before the step of forming the nitride semiconductor film.
- 前記電子線を照射する工程を、前記窒化物半導体膜を形成する工程の後に行うことを特徴とする請求項１に記載の窒化物半導体ウェーハの製造方法。 The method for manufacturing a nitride semiconductor wafer according to claim 1, wherein the step of irradiating the electron beam is performed after the step of forming the nitride semiconductor film.
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| US20160351666A1 (en) * | 2015-05-29 | 2016-12-01 | Analog Devices, Inc. | Gallium Nitride Apparatus with a Trap Rich Region |
| JP2018113358A (en) * | 2017-01-12 | 2018-07-19 | 三菱電機株式会社 | Method of manufacturing high electron mobility transistor, and high electron mobility transistor |
| JP2020098839A (en) * | 2018-12-17 | 2020-06-25 | 信越半導体株式会社 | Manufacturing method of nitride semiconductor wafer and nitride semiconductor wafer |
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| US20160351666A1 (en) * | 2015-05-29 | 2016-12-01 | Analog Devices, Inc. | Gallium Nitride Apparatus with a Trap Rich Region |
| JP2018113358A (en) * | 2017-01-12 | 2018-07-19 | 三菱電機株式会社 | Method of manufacturing high electron mobility transistor, and high electron mobility transistor |
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