WO2022056792A1 - Diode électroluminescente organique, procédé de fabrication de diode électroluminescente organique, dispositif d'affichage et dispositif d'éclairage - Google Patents

Diode électroluminescente organique, procédé de fabrication de diode électroluminescente organique, dispositif d'affichage et dispositif d'éclairage Download PDF

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Publication number
WO2022056792A1
WO2022056792A1 PCT/CN2020/115986 CN2020115986W WO2022056792A1 WO 2022056792 A1 WO2022056792 A1 WO 2022056792A1 CN 2020115986 W CN2020115986 W CN 2020115986W WO 2022056792 A1 WO2022056792 A1 WO 2022056792A1
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sublayer
layer
organic light
emitting diode
energy level
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PCT/CN2020/115986
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English (en)
Chinese (zh)
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焦志强
黄清雨
张娟
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京东方科技集团股份有限公司
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Priority to CN202080002001.3A priority Critical patent/CN114730847A/zh
Priority to PCT/CN2020/115986 priority patent/WO2022056792A1/fr
Publication of WO2022056792A1 publication Critical patent/WO2022056792A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants

Definitions

  • the present application belongs to the technical field of electroluminescence, and in particular relates to organic light-emitting diodes and methods for preparing organic light-emitting diodes, display devices and lighting devices.
  • OLED Organic Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • TCO transparent conductive oxide
  • ITO transparent conductive oxide
  • IZO transparent conductive oxide
  • the organic light emitting diode using the transparent conductive oxide as the cathode has the problems of high device work function and easy damage to the material of the light emitting layer.
  • the high transmittance TCO transparent conductive oxide
  • the TCO preparation process is usually a magnetron sputtering process, which will damage the organic thin film (light-emitting layer, etc.) below it, resulting in high voltage and leakage of the device. large and short lifespan.
  • HATCN Dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile,2, 3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene
  • TCO process damage and other problems increasing the thickness of the HATCN material can alleviate the problem of TCO process damage to a certain extent, but increasing the thickness of the HATCN material will reduce the carrier mobility of this layer and increase the device voltage.
  • the present application aims to alleviate or even solve at least one of the above technical problems at least to a certain extent.
  • the present application proposes an organic light emitting diode, the organic light emitting diode comprises a substrate, an anode, a light emitting layer and a cathode arranged in sequence; the cathode is made of a transparent conductive oxide material; the organic light emitting diode also It includes a buffer unit; the buffer unit is arranged between the light-emitting layer and the cathode, the buffer unit contains a first energy level transition material, and the buffer unit includes at least a charge injection layer, a charge separation unit and an inorganic protective layer. one.
  • the buffer unit can transition the energy level between the light-emitting layer and the cathode, reduce the difficulty of charge injection, and can also protect the organic thin film under the cathode from damage when the cathode is prepared by the magnetron sputtering process. .
  • the LUMO (Lowest Unoccupied Molecular Orbital, lowest unoccupied orbital) energy level of the first energy level transition material is between 4.5 eV and 8 eV. Therefore, the problem of difficulty in electron injection into the device caused by using TCO material as the cathode can be improved.
  • the first energy level transition material includes LG101 (purchased from LG Chem (LG chem)), HATCN, F4-TCNQ (2,3,5,6-tetrafluoro-7,7',8 , at least one of 8'-tetracyanodimethyl-p-benzoquinone).
  • LG101 purchased from LG Chem (LG chem)
  • HATCN HATCN
  • F4-TCNQ 2,3,5,6-tetrafluoro-7,7',8 , at least one of 8'-tetracyanodimethyl-p-benzoquinone
  • the charge injection layer material includes at least one of Li, Mg, and Yb. Therefore, the material of the charge injection layer can conduct electricity, and in an electric field, the electrons of the material of the charge injection layer can easily move, thereby improving the effect of electron injection and improving the difficulty of charge injection.
  • the inorganic protective layer material is at least one of MoO 3 , ZnO, and ZnS.
  • Inorganic protective layers can alleviate or improve the problem of TCO process damage.
  • the charge separation unit has a plurality of sublayer structures, and the charge separation unit contains the first energy level transition material.
  • the charge separation unit can separate holes from electrons and improve the difficulty of electron injection.
  • the structure of the multiple sub-layers of the charge separation unit can make the charge separation unit have a larger thickness, and can also improve the problem of damage in the TCO process.
  • the thickness of the charge injection layer is 0.5-1.5 nm. Therefore, the electron injection capability of the device can be further improved.
  • the thickness of the inorganic protective layer is 5-15 nm. Therefore, the organic layer (eg, the light-emitting layer, etc.) can be better protected when the cathode is formed to prevent process damage.
  • the charge separation unit further includes a second energy level transition material, and the HOMO (Highest Occupied Molecular Orbital, highest occupied orbital) energy level of the second energy level transition material ranges from 4.5 to 8 eV, and The absolute value of the difference between the LUMO energy level of the first energy level transition material and the HOMO energy level of the second energy level transition material is ⁇ 1 eV.
  • the device performance of the organic light emitting diode can be further improved.
  • the second energy level transition material is NPB.
  • the device performance of the organic light emitting diode can be further improved.
  • the thickness of the charge separation unit is 25-40 nm.
  • the structure of the organic layer eg, the light-emitting layer, etc.
  • the cathode is formed.
  • the buffer unit includes an energy level transition layer and the inorganic protective layer stacked in sequence, the energy level transition layer contains the first energy level transition material; the energy level transition layer is disposed far away from side of the cathode.
  • the thickness of the energy level transition layer is not less than 10 nm.
  • the buffer unit includes a sequentially stacked charge injection layer and the energy level transition layer, the energy level transition layer containing the first energy level transition material; the charge injection layer is disposed away from the the side of the cathode.
  • the thickness of the energy level transition layer is not less than 10 nm; preferably, it is 10-20 nm.
  • the buffer unit includes a charge separation unit and an inorganic protective layer, the charge separation unit is disposed on a side away from the cathode; the charge separation unit includes a first sublayer and a second sublayer stacked in sequence a sublayer, the first sublayer is disposed on the side away from the cathode; the first sublayer contains the first energy level transition material, and the second sublayer contains the second energy level transition material .
  • the thickness of the first sublayer is not less than 10 nm; the thickness of the second sublayer is not less than 10 nm, preferably 10-15 nm.
  • the buffer unit includes a charge separation unit including a first sublayer, a second sublayer, and a third sublayer stacked in sequence, and the first sublayer is disposed away from the cathode
  • the first sublayer and the third sublayer both contain the first energy level transition material
  • the second sublayer contains the second energy level transition material.
  • the thickness of the first sublayer is not less than 10 nm
  • the thickness of the second sublayer is not less than 10 nm
  • the thickness of the third sublayer is not less than 10 nm.
  • the buffer unit includes a charge separation unit including a first sublayer, a second sublayer, a third sublayer, a fourth sublayer, and a fifth sublayer that are sequentially stacked, the The first sublayer is arranged on the side away from the cathode; the first sublayer, the third sublayer and the fifth sublayer all contain the first energy level transition material, and the second sublayer and the fourth sublayer all contain the first energy level transition material.
  • the layers each contain the second level transition material.
  • the thickness of the first sublayer is not less than 2 nm, preferably 2-5 nm; the thickness of the second sublayer is not less than 10 nm; the thickness of the third sublayer is not less than 2 nm, preferably 2-5 nm; The thickness of the fourth sublayer is not less than 10 nm; the thickness of the fifth sublayer is not less than 10 nm.
  • the device performance of the organic light emitting diode can be further improved.
  • the buffer unit includes a charge separation unit including a first sublayer, a second sublayer, a third sublayer and a fourth sublayer that are sequentially stacked, and the first sublayer is provided On the side away from the cathode; the first and fourth sublayers both contain the first level transition material, and the second sublayer contains a P-dopant and a second level transition material , the third sublayer contains the second energy level transition material.
  • the thickness of the first sublayer is not less than 10 nm; the thickness of the second sublayer is not less than 2 nm, preferably 2-5 nm; the thickness of the third sublayer is not less than 10 nm, preferably 10 nm -15nm; the thickness of the fourth sublayer is not less than 10nm.
  • the device performance of the organic light emitting diode can be further improved.
  • the buffer unit includes a charge separation unit including a first sublayer, a second sublayer, a third sublayer and a fourth sublayer that are sequentially stacked, and the first sublayer is provided On the side remote from the cathode; the first sublayer contains the first level transition material, the second sublayer and the fourth sublayer both contain a P-dopant and a second level a transition material, the third sublayer containing the second energy level transition material.
  • the thickness of the first sublayer is not less than 10 nm; the thickness of the second sublayer is not less than 2 nm, preferably 2-5 nm; the thickness of the third sublayer is not less than 10 nm, preferably 10 nm -15nm; the thickness of the fourth sublayer is not less than 10nm.
  • the device performance of the organic light emitting diode can be further improved.
  • the present application also provides a method for preparing an organic light emitting diode, the method comprising: preparing an anode on a substrate; preparing a light-emitting layer on the anode; preparing a buffer unit on the light-emitting layer; preparing a cathode on the buffer unit;
  • the buffer unit contains a first energy level transition material, and the buffer unit includes at least one of a charge injection layer, a charge separation unit and an inorganic protective layer.
  • the organic light emitting diode prepared by this method can have all the features and advantages of the organic light emitting diode described above, which will not be repeated here. In general, the method can easily obtain the above-mentioned organic light-emitting diode, and the organic layer is less damaged when the cathode is prepared, the device voltage is low, and the performance is good.
  • the present application also provides a display device including the above organic light emitting diode. Therefore, the display device has all the features and advantages of the organic light emitting diode described above, which will not be repeated here. In general, the display device has the advantages of low device voltage and better performance.
  • the present application also provides a lighting device including the above organic light emitting diode. Therefore, the lighting device has all the features and advantages of the organic light emitting diodes described above, which will not be repeated here. In general, the lighting device has the advantages of low device voltage and better performance.
  • FIG. 1 is a schematic structural diagram of an organic light-emitting diode in the prior art
  • FIG. 2 is a schematic diagram of energy level matching of the organic light emitting diode shown in FIG. 1;
  • FIG. 3 is a schematic structural diagram of an organic light emitting diode in an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of an organic light emitting diode in another embodiment of the present application.
  • Example 5 is a schematic diagram of energy level matching of an organic light emitting diode in Example 1 of the present application.
  • Example 6 is a schematic diagram of energy level matching of organic light emitting diodes in Example 2 of the present application.
  • Example 7 is a schematic diagram of energy level matching of organic light emitting diodes in Example 3 of the present application.
  • Example 8 is a schematic diagram of energy level matching of an organic light emitting diode in Example 4 of the present application.
  • Example 9 is a schematic diagram of energy level matching of an organic light emitting diode in Example 5 of the present application.
  • FIG. 10 is a schematic diagram of energy level matching of organic light emitting diodes in Example 6 of the present application.
  • Example 11 is a schematic diagram of energy level matching of organic light emitting diodes in Example 7 of the present application.
  • the present application provides an organic light emitting diode.
  • the organic light emitting diode includes a substrate 100 , an anode 200 , a light-emitting layer 600 and a cathode 1000 arranged in sequence.
  • the cathode 200 is made of transparent conductive oxide material.
  • the organic light emitting diode further includes a buffer unit 1100 .
  • the buffer unit 1100 is disposed between the light-emitting layer 600 and the cathode 1000 , the buffer unit 1100 contains a first energy level transition material, and the buffer unit 1100 includes at least one of a charge injection layer, a charge separation unit and an inorganic protective layer.
  • the first energy level transition material may be located at any position in the charge injection layer, the charge separation unit, and the inorganic protective layer.
  • the first energy level transition material can also form a single-layer structure, and at this time, the buffer unit still includes at least one of a charge injection layer, a charge separation unit and an inorganic protective layer.
  • the first level transition material may be located anywhere in the charge separation unit.
  • the first energy level transition material can also form a single-layer structure, and in this case, the buffer unit still includes at least one of a charge injection layer and an inorganic protective layer.
  • the buffer unit 1100 can reduce the difficulty of charge injection, and can also improve the problem of TCO process damage.
  • the principle that the organic light emitting diode can achieve the above beneficial effects is briefly explained: as mentioned above, when the TCO material is used as the cathode, the energy level matching between the layers of the device will be reduced, and the defects of high device voltage will be caused. , and the sputtering process of the TCO material will damage the organic layers such as the light-emitting layer. However, if a buffer including but not limited to HATCN material is provided between the cathode and the light-emitting layer, the damage to the light-emitting layer by the sputtering process cannot be effectively blocked. In order to ensure the performance of the device, the HATCN material should not be too thick, such as no more than 10nm. .
  • the organic light emitting diode proposed in the present application is provided with a buffer unit between the light emitting layer and the cathode, and the buffer unit has a first energy level buffer material and at least one of a charge injection layer, an inorganic protective layer and a charge separation unit.
  • the buffer unit can alleviate the defect of high device voltage caused by the TCO cathode through the first energy level buffer material;
  • the thickness of the first energy level buffer material in the buffer unit can be adjusted more flexibly, and the organic layer can be effectively protected without affecting the performance of the device to prevent the cathode sputtering process. damage.
  • the first energy level transition material may have a lower LUMO energy level.
  • the electron transport ability between the light-emitting layer and the cathode can be improved.
  • the LUMO energy level of the first energy level transition material may be between 4.5eV ⁇ 8eV. Therefore, the problem of high device voltage caused by the higher work function of the TCO material when the TCO material is used as the cathode can be improved.
  • the first energy level transition material may include at least one of LG101, HATCN, and F4-TCNQ.
  • it can be HATCN.
  • the buffer unit may contain an energy level transition layer.
  • the level transition layer may be formed of a first level transition material.
  • the thickness of the energy level transition layer may be 10 nm or more.
  • the buffer unit may further have an inorganic protective layer or a charge injection layer. Therefore, the organic layer can be protected by the inorganic protective layer as an auxiliary energy level transition layer to prevent damage in the cathode process, and at the same time, the thickness of the energy level transition layer does not need to be increased, so that the device performance can be guaranteed.
  • the thickness of the energy level transition layer can also be more than 10 nm, for example, 20 nm, and then the organic layer can be fully protected by the energy level transition layer, and the charge injection layer can be used to alleviate the load caused by the large thickness of the energy level transition layer.
  • the problem of low carrier mobility can also be more than 10 nm, for example, 20 nm, and then the organic layer can be fully protected by the energy level transition layer, and the charge injection layer can be used to alleviate the load caused by the large thickness of the energy level transition layer. The problem of low carrier mobility.
  • the charge injection layer material includes at least one of Li, Mg, and Yb.
  • the charge injection layer can be located between the light-emitting layer and the energy level transition layer.
  • the material of the charge injection layer can conduct electricity. In the electric field, the electrons of the charge injection layer material can easily move, which can improve the effect of electron injection and improve the charge injection. difficult question. At this time, even if the thickness of the energy level transition layer is thicker, the device performance of the organic light emitting diode can be improved.
  • the thickness of the charge injection layer is not particularly limited, for example, it may be 0.5-1.5 nm, such as 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1 nm, 1.1 nm, 1.2 nm, 1.3 nm, 1.4 nm, 1.5 nm . Thereby, the effect of electron injection can be further enhanced.
  • the thickness of the energy level transition layer may be thinner, for example, may be 10 nm.
  • the protection of the organic layer can be improved by disposing an inorganic protective layer between the energy level transition layer and the cathode.
  • the inorganic protective layer material is at least one of MoO 3 , ZnO, and ZnS.
  • the inorganic protective layer material may include one, two or three of MoO 3 , ZnO, and ZnS. Inorganic protective layer can improve the problem of TCO process damage.
  • the thickness of the inorganic protective layer is 5-15 nm, such as 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, so that the organic layer can be more fully protected.
  • the first energy level transition material may also be provided in the charge separation unit.
  • the charge separation unit can have multiple sub-layer structures, which can separate holes and electrons. In an electric field, holes are transported to the cathode, which can improve the difficulty of electron injection.
  • the structural design of the multiple sublayers of the charge separation unit can make the charge separation unit have a larger thickness, which can further improve the problem of damage in the TCO process. Therefore, the arrangement of the charge separation unit can make the organic light emitting diode have a lower device voltage, and can also protect the organic layer (such as the light emitting layer, etc.) under the cathode, and improve the problem of damage in the TCO process.
  • the charge separation unit may further include a second energy level transition material, the HOMO energy level of the second energy level transition material ranges from 4.5 to 8 eV, and the LUMO energy level of the first energy level transition material is the same as the second energy level.
  • the absolute value of the difference in the HOMO energy level of the transition material is ⁇ 1 eV.
  • the LUMO energy level of the first energy level transition material may be greater than the HOMO energy level of the second energy level transition material, and the LUMO energy level of the first energy level transition material may also be smaller than the HOMO energy level of the second energy level transition material, As long as the absolute value of the difference between the two energy levels is less than ⁇ 1 eV.
  • the second energy level transition material can be used with the first energy level transition material to achieve separation of electrons and holes.
  • the second energy level transition material may be NPB.
  • the device performance of the organic light emitting diode can be further improved.
  • the thickness of the charge separation unit is 25-40 nm, eg, 25 nm, 40 nm.
  • the charge separation unit contains not only the first energy level transition material, but also the second energy level transition material, the coordination of the first energy level transition material and the second energy level transition material can separate electron holes, The problem of difficulty in electron injection is improved, so the larger thickness of the charge separation unit will not seriously affect the voltage of the device.
  • the charge separation unit with a large thickness eg, greater than 10 nm
  • the buffer unit includes an energy level transition layer and an inorganic protective layer stacked in sequence, and the energy level transition layer contains a first energy level transition material.
  • the energy level transition layer is arranged on the side away from the cathode.
  • the thickness of the energy level transition layer is not less than 10 nm, for example, 10 nm.
  • the buffer unit here may also contain a layered structure that is not mentioned in the application documents. The application does not limit the location of the layered structure that is not mentioned. It can be selected according to the use requirements. For example, no The mentioned layered structure may be located between the energy level transition layer and the inorganic protective layer.
  • the buffer unit includes a sequentially stacked charge injection layer and an energy level transition layer, and the energy level transition layer contains a first energy level transition material. At this time, the charge injection layer is disposed on the side away from the cathode.
  • the thickness of the energy level transition layer is not less than 10 nm, preferably 10-20 nm, eg, 20 nm.
  • HATCN may be used as the energy level transition layer, and the thickness of the energy level transition layer may be relatively thick.
  • the work function of IZO is about 5.0 eV
  • the LUMO energy level of HATCN is 5.7 eV, which can improve the electron injection capability of the cathode.
  • Li can be used to form a 1 nm-thick charge injection layer, which improves the problem of device performance degradation caused by the thicker energy level transition layer.
  • the buffer unit here may also contain a layered structure that is not mentioned in the application documents. The application does not limit the location of the layered structure that is not mentioned. It can be selected according to the use requirements. For example, no The mentioned layered structure may be located between the charge injection layer and the energy level transition layer.
  • the buffer unit includes a charge separation unit and an inorganic protective layer stacked in sequence, the charge separation unit is disposed on a side away from the cathode, and in this case, the charge separation unit may include a first sublayer and a second sublayer disposed in sequence , the first sublayer is disposed on the side away from the cathode.
  • the first sublayer contains the first energy level transition material
  • the second sublayer contains the second energy level transition material.
  • the first sublayer may be formed of HATCN
  • the second sublayer may be formed of NPB.
  • the thickness of the first sublayer is not less than 10 nm, eg, 10 nm.
  • the thickness of the second sublayer is not less than 10 nm, preferably 10-15 nm, such as 15 nm.
  • the inorganic protective layer may be MoO 3 .
  • the charge separation unit formed by HATCN and NPB can effectively separate electrons and holes, and when the charge separation unit contains only the above - mentioned first and second sublayers, the energy difference between NPB and MoO3 Smaller, the NPB can be placed close to the side of the inorganic protective layer.
  • the buffer unit here may also contain layered structures that are not mentioned in the application documents. This application does not limit the location of the layered structures that are not mentioned. The mentioned layered structure may be located between the charge separation unit and the inorganic protective layer.
  • the buffer unit may only include a charge separation unit, in which case the charge separation unit includes a first sublayer, a second sublayer and a third sublayer stacked in sequence, and the first sublayer is disposed on a side away from the cathode. Both the first sublayer and the third sublayer contain the first energy level transition material, and the second sublayer contains the second energy level transition material.
  • the thickness of the first sublayer is not less than 10 nm, eg, 10 nm.
  • the thickness of the second sublayer is not less than 10 nm, preferably 10-20 nm, such as 20 nm.
  • the thickness of the third sublayer is not less than 10 nm, eg, 10 nm.
  • the overall thickness of the charge separation unit is relatively large due to the structure design with three sublayers, for example, it can be 40 nm.
  • the charge separation unit can be used to fully conduct the organic layer separation without setting an inorganic protective layer. protection to prevent damage to the cathode process.
  • the buffer unit here may also contain a layered structure that is not mentioned in the application documents. The application does not limit the location of the layered structure that is not mentioned. It can be selected according to the use requirements. For example, no The mentioned layered structure may be located between any two sublayers of the first sublayer, the second sublayer, and the third sublayer.
  • the buffer unit may only include a charge separation unit, and in this case, the charge separation unit includes a first sublayer, a second sublayer, a third sublayer, a fourth sublayer, and a fifth sublayer, which are sequentially stacked.
  • the sublayer is arranged on the side remote from the cathode.
  • the first sublayer, the third sublayer and the fifth sublayer all contain the first energy level transition material, and the second sublayer and the fourth sublayer each contain the second energy level transition material.
  • the thickness of the first sublayer is not less than 2 nm, preferably 2-5 nm, eg, 5 nm.
  • the thickness of the second sublayer is not less than 10 nm, eg, 10 nm.
  • the thickness of the third sublayer is not less than 2 nm, preferably 2-5 nm, such as 5 nm.
  • the thickness of the fourth sublayer is not less than 10 nm, eg, 10 nm.
  • the thickness of the fifth sublayer is not less than 10 nm, eg, 10 nm.
  • the overall thickness of the charge separation unit is relatively large due to the structure design with five sub-layers, for example, it can be 40 nm. At this time, the charge separation unit can be used to fully conduct the organic layer without setting an inorganic protective layer. protection to prevent damage to the cathode process.
  • the buffer unit here may also contain a layered structure that is not mentioned in the application documents.
  • the application does not limit the location of the layered structure that is not mentioned. It can be selected according to the use requirements. For example, no The mentioned layered structure may be located between any two sublayers of the first sublayer, the second sublayer, the third sublayer, the fourth sublayer, and the fifth sublayer.
  • the buffer unit may only include a charge separation unit, and in this case, the charge separation unit includes a first sublayer, a second sublayer, a third sublayer and a fourth sublayer that are stacked in sequence, and the first sublayer is disposed far away from side of the cathode.
  • the first sublayer and the fourth sublayer each contain the first level transition material
  • the second sublayer contains the P-dopant and the second level transition material
  • the third sublayer contains the second level transition material.
  • the P-dopant includes at least one of the first level transition material, NDP-9.
  • the thickness of the first sublayer is not less than 10 nm, eg, 10 nm.
  • the thickness of the second sublayer is not less than 2 nm, preferably 2-5 nm, eg 5 nm.
  • the thickness of the third sublayer is not less than 10 nm, preferably 10-15 nm, such as 15 nm.
  • the thickness of the fourth sublayer is not less than 10 nm, eg, 10 nm.
  • the overall thickness of the charge separation unit is relatively large due to the structure design with four sub-layers, for example, it can be 40 nm.
  • the charge separation unit can be used to remove the organic layer under the cathode without setting an inorganic protective layer. The layer is fully protected to prevent damage to the cathode process.
  • the buffer unit here may also contain a layered structure that is not mentioned in the application documents.
  • the application does not limit the location of the layered structure that is not mentioned. It can be selected according to the use requirements. For example, no The mentioned layered structure may be located between any two sublayers of the first sublayer, the second sublayer, the third sublayer, and the fourth sublayer.
  • the buffer unit may only include a charge separation unit, and in this case, the charge separation unit includes a first sublayer, a second sublayer, a third sublayer and a fourth sublayer that are stacked in sequence, and the first sublayer is disposed far away from side of the cathode.
  • the first sublayer contains the first level transition material
  • the second and fourth sublayers both contain P-dopants and the second level transition material
  • the third sublayer contains the second level transition material.
  • the P-dopant includes at least one of the first level transition material, NDP-9.
  • the thickness of the first sublayer is not less than 10 nm, eg, 10 nm.
  • the thickness of the second sublayer is not less than 2 nm, preferably 2-5 nm, eg 5 nm.
  • the thickness of the third sublayer is not less than 10 nm, preferably 10-15 nm, such as 15 nm.
  • the thickness of the fourth sublayer is not less than 10 nm, eg, 10 nm.
  • the buffer unit here may also contain a layered structure that is not mentioned in the application documents. The application does not limit the location of the layered structure that is not mentioned. It can be selected according to the use requirements. For example, no The mentioned layered structure may be located between any two sublayers of the first sublayer, the second sublayer, the third sublayer, and the fourth sublayer.
  • the organic light emitting diode may further have at least one of the following structures: a hole injection layer 300 , a hole transport layer 400 , an electron blocking layer 500 , an electron transport layer (Electron Transport Layer) , ETL) 700 , and electron injection layer 800 .
  • a hole injection layer 300 , a hole transport layer 400 and an electron blocking layer 500 are arranged between the anode 200 and the light emitting layer 600 in sequence, and the hole injection layer 300 is arranged on the side close to the anode 200 .
  • An electron transport layer 700 and an electron injection layer 800 are arranged between the light emitting layer 600 and the buffer unit 1100 in sequence, and the electron transport layer 700 is arranged on the side close to the light emitting layer 600 .
  • the present application does not limit the materials of the anode, the hole injection layer, the hole transport layer, the electron blocking layer, the light emitting layer, the electron transport layer and the electron injection layer.
  • the anode can be silver thin film and indium tin oxide thin film
  • the hole injection layer material can be HATCN
  • the hole transport layer material can be NPB(N,N'-bis(naphthalen-1-yl)-N,N'- bis(phenyl)-benzidine)
  • the electron blocking layer material can be DBTPB(N4,N4'-bis(dibenzo[b,d]thiophen-4-yl)-N4,N4'-diphenylbiphenyl-4,4'-diaMine) or Ir(ppz) 3 (Tris(phenylpyrazole) iridium)
  • the material of the light-emitting layer can be MADN:DSA-Ph
  • the doping host of the material of the light-emitting layer is MADN(2-methyl-9,10-bis(naphthalen) -2-yl)anthracene)
  • the doping guest of the light-emitting layer material is DSA-Ph(1-4
  • organic layer in this application should be understood in a broad sense.
  • the organic layer includes a light-emitting layer, and when the organic light-emitting diode further includes an electron transport layer, an electron injection layer, and the like, the organic layer may further include a light-emitting layer, an electron transport layer, and an electron injection layer.
  • organic layer includes the light-emitting layer and the structure between the light-emitting layer and the cathode excluding the buffer unit.
  • the present application also provides a method for preparing an organic light emitting diode, the method comprising: preparing an anode on a substrate.
  • a light-emitting layer is prepared on the anode.
  • a buffer unit is prepared on the light-emitting layer.
  • a cathode is prepared on the buffer unit, and the cathode is made of a transparent conductive oxide material.
  • the buffer unit contains a first energy level transition material, and the buffer unit includes at least one of a charge injection layer, a charge separation unit and an inorganic protective layer.
  • the method for preparing an organic light emitting diode includes the following steps: sequentially preparing an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, and an electron injection layer on the substrate.
  • a buffer unit is prepared on the electron injection layer.
  • a cathode is prepared on the buffer unit. Since the organic light emitting diode prepared by this method has the aforementioned buffer unit, which can effectively prevent the organic layer from being damaged in the cathode manufacturing process, it is not necessary to improve the cathode manufacturing process.
  • the present application also provides a display device including the above organic light emitting diode. Therefore, the display device has all the features and advantages of the organic light emitting diode described above, which will not be repeated here.
  • the present application also provides a lighting device including the above organic light emitting diode. Therefore, the lighting device has all the features and advantages of the organic light emitting diodes described above, which will not be repeated here.
  • the reagents used can be purchased from the market or can be prepared by the methods described in this application.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode arranged in sequence.
  • the substrate is glass
  • the anode is silver thin film and indium tin oxide (ITO) thin film
  • the hole injection layer material is HATCN
  • the thickness is 10 nm.
  • the hole transport layer material is NPB with a thickness of 150 nm.
  • the electron blocking layer material is DBTPB with a thickness of 4 nm.
  • the material of the light-emitting layer is MADN:DSA-Ph, the thickness is 20 nm, and the mass ratio of DSA-Ph to the material of the light-emitting layer is 5%.
  • the electron transport layer material is Bphen, and the thickness is 35 nm.
  • the material of the electron injection layer is Bphen:LiQ, and the thickness is 80 nm.
  • the cathode material is IZO with a thickness of 200 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(80nm)/IZO(200nm) ).
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a HATCN layer, and a cathode arranged in sequence.
  • the anode is made of silver thin film and indium tin oxide (ITO) thin film
  • the material of the hole injection layer is HATCN with a thickness of 10 nm.
  • the hole transport layer material is NPB with a thickness of 150 nm.
  • the electron blocking layer material is DBTPB with a thickness of 4 nm.
  • the material of the light-emitting layer is MADN:DSA-Ph, the thickness is 20 nm, and the mass ratio of DSA-Ph to the material of the light-emitting layer is 5%.
  • the electron transport layer material is Bphen, and the thickness is 35 nm.
  • the material of the electron injection layer is Bphen:LiQ, and the thickness is 70 nm.
  • the thickness of the HATCN layer is 10 nm.
  • the cathode material is IZO with a thickness of 200 nm.
  • the organic light emitting diode has a structure as shown in FIG. 1 .
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(70nm)/HATCN(10nm )/IZO (200 nm).
  • the energy level matching schematic diagram of the above organic light emitting diode is shown in Figure 2.
  • the electrons from the cathode are transferred to the electron injection layer through the HATCN, the energy level difference is large, and there is the problem of difficulty in charge injection, and the device voltage is high. And there is also the problem of TCO process damage.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a buffer unit, and a cathode arranged in sequence.
  • the substrate is glass
  • the anode is silver thin film and indium tin oxide (ITO) thin film
  • the hole injection layer material is HATCN
  • the thickness is 10 nm.
  • the hole transport layer material is NPB with a thickness of 150 nm.
  • the electron blocking layer material is DBTPB with a thickness of 4 nm.
  • the material of the light-emitting layer is MADN:DSA-Ph, the thickness is 20 nm
  • the doping host in the light-emitting layer is MADN
  • the doping guest is DSA-Ph
  • the mass ratio of DSA-Ph to the material of the light-emitting layer is 5%.
  • the electron transport layer material is Bphen, and the thickness is 35 nm.
  • the material of the electron injection layer is Bphen:LiQ, and the thickness is 55 nm.
  • the buffer unit of this embodiment includes a charge separation unit and an inorganic protective layer arranged in sequence, and the charge separation unit is arranged on a side away from the cathode.
  • the charge separation unit includes two sublayers. Specifically, the charge separation unit includes a first sublayer and a second sublayer that are arranged in sequence, and the first sublayer is arranged on a side away from the cathode.
  • the first sublayer contains a first energy level transition material, the first energy level transition material is HATCN, and the thickness of the first sublayer is 10 nm.
  • the second sublayer contains a second energy level transition material, the second energy level transition material is NPB, and the thickness of the second sublayer is 15 nm.
  • the inorganic protective layer is MoO 3 with a thickness of 10 nm.
  • the cathode material is IZO with a thickness of 200 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(55nm)/HATCN(10nm )/NPB(15nm)/MoO3 ( 10nm)/IZO(200nm).
  • the method for preparing the organic light emitting diode is as follows: an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer and an electron injection layer are sequentially prepared on the substrate. A buffer unit is prepared on the electron injection layer. A cathode is prepared on the buffer unit.
  • the method for preparing an organic light emitting diode includes: cleaning a transparent glass substrate with Ag/ITO (the surface resistance of which is ⁇ 30 ⁇ / ⁇ ) in an ultrasonic environment in deionized water, acetone and absolute ethanol in sequence, and then using N 2 blow dry and treat with O 2 plasma. Finally, the processed substrate is placed in an evaporation chamber, and after the vacuum degree is lower than 5 ⁇ 10 -4 Pa, various functional layers are sequentially deposited on the surface of ITO by vacuum thermal evaporation.
  • the schematic diagram of energy level matching of the organic light emitting diode in Example 1 is shown in Figure 5.
  • the buffer unit in this example can separate holes and electrons. Under the action of an electric field, holes are transported to the cathode, which can improve the difficulty of electron injection. Problem, device voltage is low.
  • this embodiment uses the inorganic material MoO 3 , which can improve the problem of damage in the TCO process.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a buffer unit, and a cathode arranged in sequence.
  • the substrate of this embodiment is the same as that of Embodiment 1, and the materials and thicknesses of the anode, hole injection layer, hole transport layer, electron blocking layer, light-emitting layer and cathode of this embodiment are the same as those of Embodiment 1.
  • the material of the electron transport layer in this embodiment is Bphen, and the thickness is 35 nm.
  • the material of the electron injection layer is Bphen:LiQ, and the thickness is 60 nm.
  • the buffer unit of this embodiment includes an energy level transition layer and an inorganic protective layer arranged in sequence, and the energy level transition layer is arranged on the side away from the cathode.
  • the energy level transition layer contains a first energy level transition material, the first energy level transition material is HATCN, and the thickness of the energy level transition layer is 10 nm.
  • the inorganic protective layer material is MoO 3 with a thickness of 10 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(60nm)/HATCN(10nm) )/MoO 3 (10 nm)/IZO (200 nm).
  • the organic light emitting diode in Example 2 can be prepared.
  • Example 2 The schematic diagram of energy level matching of the organic light emitting diode in Example 2 is shown in FIG. 6 .
  • the inorganic material MoO 3 is used, which can improve the problem of damage in the TCO process, and the device voltage of this example is low.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a buffer unit, and a cathode arranged in sequence.
  • the substrate of this example is the same as that of Example 1, and the materials and thicknesses of the anode, hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, electron transport layer and cathode of this example are the same as those of Example 1. same.
  • the material of the electron injection layer in this embodiment is Bphen:LiQ, and the thickness is 60 nm.
  • the buffer unit in this embodiment includes a charge separation unit, and the charge separation unit includes three sublayers.
  • the charge separation unit includes a first sublayer, a second sublayer, and a third sublayer arranged in sequence, and the first sublayer is arranged at The side away from the cathode.
  • Both the first sublayer and the third sublayer contain a first energy level transition material, and the first energy level transition material is HATCN, that is, both the first sublayer and the third sublayer contain HATCN.
  • the second sublayer contains the second energy level transition material, and the second energy level transition material is NPB, that is, the second sublayer contains NPB.
  • the thickness of the first sublayer is 10 nm
  • the thickness of the second sublayer is 20 nm
  • the thickness of the third sublayer is 10 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(60nm)/HATCN(10nm )/NPB(20nm)/HATCN(10nm)/IZO(200nm).
  • the organic light emitting diode in Example 3 can be prepared.
  • the schematic diagram of the energy level matching of the organic light emitting diode in Example 3 is shown in Figure 7.
  • the buffer unit in this example can separate holes and electrons. Under the action of an electric field, holes are transported to the cathode, which can improve the difficulty of electron injection. Problem, device voltage is low.
  • the structural design of multiple sub-layers in this embodiment can improve the problem of damage in the TCO process.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a buffer unit, and a cathode arranged in sequence.
  • the substrate of this embodiment is the same as that of Embodiment 1, and the materials and thicknesses of the anode, hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, electron transport layer and cathode of this embodiment are the same as those of the embodiment. 1 is the same.
  • the material of the electron injection layer in this embodiment is Bphen:LiQ, and the thickness is 60 nm.
  • the buffer unit of this embodiment includes a charge separation unit.
  • the charge separation unit includes five sublayers, and the thickness of the charge separation unit is 40 nm.
  • the charge separation unit includes a first sublayer, a second sublayer, a third sublayer, a fourth sublayer and a fifth sublayer that are arranged in sequence, and the first sublayer is arranged on a side away from the cathode.
  • the first sublayer, the third sublayer and the fifth sublayer all contain the first energy level transition material, and the first energy level transition material is HATCN, that is, the first sublayer, the third sublayer and the fifth sublayer all contain HATCN.
  • Both the second sublayer and the fourth sublayer contain a second energy level transition material, and the second energy level transition material is NPB, that is, both the second sublayer and the fourth sublayer contain NPB.
  • the thickness of the first sublayer is 5 nm
  • the thickness of the second sublayer is 10 nm
  • the thickness of the third sublayer is 5 nm
  • the thickness of the fourth sublayer is 10 nm
  • the thickness of the fifth sublayer is 10 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(60nm)/HATCN(5nm) )/NPB(10nm)/HATCN(5nm)/NPB(10nm)/HATCN(10nm)/IZO(200nm).
  • the organic light emitting diode in Example 4 can be prepared.
  • the schematic diagram of energy level matching of the organic light emitting diode in Example 4 is shown in Figure 8.
  • the buffer unit in this example can separate holes and electrons. Under the action of an electric field, holes are transported to the cathode, which can improve the difficulty of electron injection. Problem, device voltage is low.
  • the structural design of multiple sub-layers in this embodiment can improve the problem of damage in the TCO process.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a buffer unit, and a cathode arranged in sequence.
  • the substrate of this example is the same as that of Example 1, and the materials and thicknesses of the anode, hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, electron transport layer and cathode of this example are the same as those of Example 1. same.
  • the material of the electron injection layer in this embodiment is Bphen:LiQ, and the thickness is 60 nm.
  • the buffer unit of this embodiment includes charge separation units arranged in sequence.
  • the charge separation unit includes four sublayers, specifically, the charge separation unit includes a first sublayer, a second sublayer, a third sublayer and a fourth sublayer arranged in sequence, and the first sublayer is arranged on a side away from the cathode.
  • Both the first sublayer and the fourth sublayer contain a first energy level transition material, and the first energy level transition material is HATCN, that is, both the first sublayer and the fourth sublayer contain HATCN.
  • the second sublayer contains a P-dopant and a second energy level transition material, specifically, the P-dopant is HATCN, and the second sublayer contains HATCN and NPB, wherein the mass ratio of HATCN to the second sublayer material is 5%.
  • the third sublayer contains the second energy level transition material, and the second energy level transition material is NPB, that is, the third sublayer contains NPB.
  • the thickness of the first sublayer is 10 nm
  • the thickness of the second sublayer is 5 nm
  • the thickness of the third sublayer is 15 nm
  • the thickness of the fourth sublayer is 10 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(60nm)/HATCN(10nm )/NPB:HATCN(5nm,1%)/NPB(15nm)/HATCN(10nm)/IZO(200nm).
  • the organic light emitting diode in Example 5 can be prepared.
  • the schematic diagram of energy level matching of the organic light emitting diode in Example 5 is shown in Figure 9.
  • the buffer unit in this example can separate holes and electrons. Under the action of an electric field, holes are transported to the cathode, which can improve the difficulty of electron injection. Problem, device voltage is low.
  • the structural design of multiple sub-layers in this embodiment can improve the problem of damage in the TCO process.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a buffer unit and a cathode arranged in sequence.
  • the substrate of this example is the same as that of Example 1, and the materials and thicknesses of the anode, hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, electron transport layer and cathode of this example are the same as those of Example 1. same.
  • the material of the electron injection layer in this embodiment is Bphen:LiQ, and the thickness is 60 nm.
  • the buffer unit of this embodiment includes a charge separation unit.
  • the charge separation unit includes four sublayers, specifically, the charge separation unit includes a first sublayer, a second sublayer, a third sublayer and a fourth sublayer arranged in sequence, and the first sublayer is arranged on a side away from the cathode.
  • the first sublayer contains a first energy level transition material, and the first energy level transition material is HATCN, that is, the first sublayer contains HATCN.
  • Both the second sublayer and the fourth sublayer contain a P-dopant and a second energy level transition material, specifically, the P-dopant is HATCN, and the second energy level transition material is NPB, that is, the second sublayer and The fourth sublayer both contains HATCN and NPB, wherein the mass ratio of HATCN to the material of the second sublayer is 5%, and the mass ratio of HATCN to the material of the fourth sublayer is 5%.
  • the third sublayer contains the second energy level transition material, and the second energy level transition material is NPB, that is, the third sublayer contains NPB.
  • the thickness of the first sublayer is 10 nm
  • the thickness of the second sublayer is 5 nm
  • the thickness of the third sublayer is 15 nm
  • the thickness of the fourth sublayer is 10 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm,5%)/Bphen(35nm)/Bphen:LiQ(60nm)/HATCN(10nm) )/NPB:HATCN(5nm,1%)/NPB(15nm)/NPB:HATCN(10nm)/IZO(200nm).
  • the organic light emitting diode in Example 6 can be prepared.
  • the schematic diagram of energy level matching of the organic light emitting diode in Example 6 is shown in Figure 10.
  • the buffer unit in this example can separate holes and electrons. Under the action of an electric field, holes are transported to the cathode, which can improve the difficulty of electron injection. Problem, device voltage is low.
  • the structural design of multiple sub-layers in this embodiment can improve the problem of damage in the TCO process.
  • the organic light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a buffer unit and a cathode arranged in sequence.
  • the substrate of this example is the same as that of Example 1, and the materials and thicknesses of the anode, hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, electron transport layer and cathode of this example are the same as those of Example 1. same.
  • the material of the electron injection layer is Bphen:LiQ, and the thickness is 60 nm.
  • the buffer unit of this embodiment includes a charge injection layer and an energy level transition layer arranged in sequence, and the charge injection layer is arranged on a side away from the cathode.
  • the charge injection layer material contains Li, and the thickness of the charge injection layer is 1 nm.
  • the energy level transition layer contains a first energy level transition material, and the first energy level transition material is HATCN, that is, the energy level transition layer contains HATCN, and the thickness of the energy level transition layer is 20 nm.
  • each functional layer is: HATCN(10nm)/NPB(150nm)/DBTPB(4nm)/MADN:DSA-Ph(20nm, 5%)/Bphen(35nm)/Bphen:LiQ(60nm)/Li(1nm )/HATCN(20nm)/IZO(200nm).
  • the organic light emitting diode in Example 7 can be prepared.
  • the schematic diagram of the energy level matching of the organic light emitting diode in Example 7 is shown in Figure 11.
  • the Li layer in this example can conduct electricity. Under the action of the electric field, the electrons in the Li layer can easily move, which can improve the effect of electron injection and improve the The problem of difficult electron injection reduces the device voltage.
  • the test conditions are: when a current density of 10 mA/cm 2 is applied to the device, the voltage and luminous efficiency of the device are tested. A voltage of -5V was applied to the device, and the current density of the device was tested. When the current density was less than or equal to -1x10 -2 mA/cm 2 , it was judged as a defective leakage point, and a total of 140 samples were tested.
  • the test results are shown in Table 1 below.
  • the device voltages of Examples 1-7 are all lower than the device voltages in Comparative Examples 1-2, and the luminous efficiency of the devices in Examples 1-7 is greater than or equal to the luminous efficiency of Comparative Examples 1-2, and Comparative Example 1
  • the leakage problem of the organic light emitting diode is solved, which proves that the buffer unit of the present application has an obvious effect on avoiding TCO sputtering damage and has a long device life.
  • the voltage of the device of the present application is reduced, which proves that the present application can improve the problem of difficulty in electron injection.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne une diode électroluminescente organique et un procédé de fabrication de la diode électroluminescente organique, un dispositif d'affichage et un dispositif d'éclairage. La diode électroluminescente organique comprend un substrat (100), une anode (200), une couche électroluminescente (600), et une cathode (1000) qui sont disposés de manière séquentielle ; la cathode (1000) est constituée d'un matériau d'oxyde conducteur transparent ; la diode électroluminescente organique comprend en outre une unité tampon (1100) ; l'unité tampon (1100) est disposée entre la couche électroluminescente (600) et la cathode (1000) ; l'unité tampon (1100) contient un premier matériau de transition de niveau d'énergie ; l'unité tampon (1100) comprend au moins l'une d'une couche d'injection de charge, d'une unité de séparation de charge et d'une couche de protection inorganique.
PCT/CN2020/115986 2020-09-17 2020-09-17 Diode électroluminescente organique, procédé de fabrication de diode électroluminescente organique, dispositif d'affichage et dispositif d'éclairage WO2022056792A1 (fr)

Priority Applications (2)

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PCT/CN2020/115986 WO2022056792A1 (fr) 2020-09-17 2020-09-17 Diode électroluminescente organique, procédé de fabrication de diode électroluminescente organique, dispositif d'affichage et dispositif d'éclairage

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CN101810053A (zh) * 2007-09-28 2010-08-18 大日本印刷株式会社 白色发光元件
CN101855741A (zh) * 2008-12-25 2010-10-06 富士电机控股株式会社 具有阴极缓冲层的有机el元件
WO2013103440A1 (fr) * 2012-01-06 2013-07-11 Qd Vision, Inc. Dispositif électroluminescent comprenant des points quantiques émettant en bleu et procédé
CN103378297A (zh) * 2012-04-25 2013-10-30 群康科技(深圳)有限公司 有机发光二极管及包括其的显示装置
CN105355798A (zh) * 2015-11-25 2016-02-24 京东方科技集团股份有限公司 有机电致发光器件及其制作方法、显示装置
CN107123742A (zh) * 2017-05-15 2017-09-01 华南理工大学 一种倒置型底发射有机发光二极管及其制备方法
US10593902B2 (en) * 2017-09-29 2020-03-17 University Of Central Florida Research Foundation, Inc. Quantum dot light emitting devices (QLEDs) and method of manufacture

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Publication number Priority date Publication date Assignee Title
CN101810053A (zh) * 2007-09-28 2010-08-18 大日本印刷株式会社 白色发光元件
CN101855741A (zh) * 2008-12-25 2010-10-06 富士电机控股株式会社 具有阴极缓冲层的有机el元件
WO2013103440A1 (fr) * 2012-01-06 2013-07-11 Qd Vision, Inc. Dispositif électroluminescent comprenant des points quantiques émettant en bleu et procédé
CN103378297A (zh) * 2012-04-25 2013-10-30 群康科技(深圳)有限公司 有机发光二极管及包括其的显示装置
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