WO2022052607A1 - 显示面板 - Google Patents

显示面板 Download PDF

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Publication number
WO2022052607A1
WO2022052607A1 PCT/CN2021/104547 CN2021104547W WO2022052607A1 WO 2022052607 A1 WO2022052607 A1 WO 2022052607A1 CN 2021104547 W CN2021104547 W CN 2021104547W WO 2022052607 A1 WO2022052607 A1 WO 2022052607A1
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WO
WIPO (PCT)
Prior art keywords
array substrate
protrusion
display panel
layer
dam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2021/104547
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English (en)
French (fr)
Inventor
颜志敏
孟辉辉
王淑鹏
刘亚伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan Govisionox Optoelectronics Co Ltd
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Kunshan Govisionox Optoelectronics Co Ltd
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Application filed by Kunshan Govisionox Optoelectronics Co Ltd filed Critical Kunshan Govisionox Optoelectronics Co Ltd
Publication of WO2022052607A1 publication Critical patent/WO2022052607A1/zh
Priority to US18/147,191 priority Critical patent/US20230136874A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present application relates to the field of display technology, and in particular, to a display panel.
  • Existing display panels usually include an isolation layer disposed between the organic light-emitting structure layer and the packaging structure. Since the edge of the isolation layer is exposed to the air, water and oxygen are easily invaded from the edge, which affects the reliability of the packaging.
  • the embodiments of the present application provide a display panel to solve the problem that water and oxygen easily invade from the edge of the isolation layer in the prior art.
  • a first aspect of the present application provides a display panel, comprising: an array substrate including a display area and a frame area surrounding the display area; a protrusion located in the frame area, the protrusion including a first sidewall on a side close to the display area and a side wall away from the display area a second sidewall on one side of the display area, at least one of the first sidewall and the second sidewall includes a concave area; and an isolation layer, stacked on one side of the array substrate and the protrusion, and the protrusion is located on the isolation layer in the orthographic projection on the array substrate.
  • a concave area is formed on the first side wall and/or the second side wall of the protrusion.
  • the film needs to be deposited by the diffusion of ions or atoms, resulting in a thinning or even disconnection of the film thickness of the subsequently prepared isolation layer in the concave region.
  • the thickness of the isolation layer is reduced, the intrusion of water and oxygen can be effectively inhibited. Therefore, the isolation layer in the concave area can inhibit the intrusion of water and oxygen, thereby reducing the probability of intrusion of water and oxygen through the edge of the isolation layer as a whole, and improving the packaging. reliability.
  • the length of the isolation layer is extended, that is, the invasion path of water and oxygen is extended, thereby further reducing the probability of water and oxygen intrusion and improving the packaging reliability.
  • FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a display panel according to another embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a protrusion provided by an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a manufacturing process of a protrusion provided by an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a manufacturing process of a protrusion according to another embodiment of the present application.
  • FIG. 6 is a structural block diagram of a display device according to an embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
  • the display panel 10 includes an isolation layer 13 disposed between the organic light emitting structure layer 110 and the encapsulation structure 12 .
  • the isolation layer 13 can block the plasma generated in the process of preparing the package structure 12, so as to prevent the plasma from adversely affecting the organic light emitting structure layer 110, thereby affecting the display effect.
  • the preparation process of the isolation layer 13 uses the same mask as the inorganic packaging layer 121 in the packaging structure 12. Therefore, as shown in FIG. 1, the isolation layer 13 covers the display area AA where the organic light-emitting structure layer 110 is located, and further extends to the array substrate 11
  • the frame area SS, and the encapsulation structure 12 does not cover the sidewall of the isolation layer 13, and the sidewall of the isolation layer 13 is directly exposed to the air.
  • the compactness of the isolation layer 13 is lower than the compactness of the inorganic encapsulation layer 121 in the package structure 12 , water and oxygen in the air easily invade inward from the sidewall of the isolation layer 13 , reducing the packaging reliability.
  • the display panel 20 includes an array substrate 21 , an isolation layer 23 and protrusions 24 .
  • the array substrate 21 includes a display area AA and a frame area SS surrounding the display area AA.
  • the protrusion 24 is located in the frame area SS, and includes a first side wall 241 on a side close to the display area AA and a second side wall 242 on a side away from the display area AA, at least one of the first side wall 241 and the second side wall 242 Including the concave area.
  • the isolation layer 23 is stacked on one side of the array substrate 21 and the protrusions 24 , and the protrusions 24 are located in the orthographic projection of the isolation layer 23 on the array substrate 21 .
  • the array substrate 21 includes a base substrate and a thin-film transistor (Thin-film transistor, TFT) array formed on the base substrate.
  • the base substrate may be formed of any one of a glass material, a metal material, or a plastic material including polyethylene terephthalate, polyethylene naphthalate, or polyimide.
  • the TFT array can be directly disposed on the base substrate. It should be understood that, in addition to the thin film transistors, the TFT array also includes film layers such as a planarization layer and a passivation layer, which are not limited herein.
  • the isolation layer 23 may be a single film layer, or may be a composite film layer composed of a plurality of film layers stacked in sequence.
  • the isolation layer 23 can be prepared by using any inorganic material with water and oxygen barrier function.
  • the material of the isolation layer 23 is silicon oxide.
  • the array substrate 21 is divided into a display area AA and a frame area SS surrounding the display area AA.
  • the display area AA is provided with an organic light emitting structure layer 210 for emitting light
  • the frame area SS is provided with protrusions 24, and the barrier layer 23 is stacked on the array substrate. 21 , the organic light-emitting structure layer 210 and the protrusions 23 are covered.
  • the organic light-emitting structure layer 210 includes a pixel defining layer, a first electrode layer, a light-emitting layer, and a second electrode layer sequentially disposed on the array substrate 21 .
  • the pixel defining layer is provided with an opening to expose the first electrode layer.
  • the light-emitting layer is disposed in the opening of the pixel defining layer and on the exposed first electrode layer.
  • the second electrode layer covers the light emitting layer.
  • the light-emitting layer may be a red-emitting sub-pixel, a green-emitting sub-pixel, or a blue-emitting sub-pixel.
  • the first electrode layer is an anode and the second electrode layer is a cathode.
  • the height of the protrusions 24 protruding from the surface of the array substrate on which the protrusions are disposed is greater than or equal to 1 micrometer and less than or equal to 10 micrometers.
  • the isolation layer 23 includes a silicon oxide layer.
  • the thickness of the silicon oxide layer is greater than or equal to 5 angstroms and less than or equal to 2000 angstroms. Considering the precision of the existing film forming equipment, the thickness of the silicon oxide layer is 600 angstroms.
  • the concave area on the first side wall 241 and/or the second side wall 242 of the protrusion 24 refers to the area formed on the first side wall 241 and/or the second side wall 242 that is protruding around and recessed in the middle, That is, the center is recessed toward the interior of the protrusion 24 compared to the periphery.
  • the isolation layer 23 is prepared by chemical vapor deposition (Chemical Vapor Deposition, CVD) or atomic layer deposition (Atomic layer deposition, ALD), since the concave region of the protrusion 24 is not in the deposition direction, so The film needs to be deposited by the diffusion of ions or atoms, resulting in the subsequent preparation of the isolation layer 23 being thinned or even disconnected in the concave region.
  • CVD chemical Vapor Deposition
  • ALD atomic layer deposition
  • the isolation layer 23 since the thickness of the isolation layer 23 is thinned, it is beneficial to inhibit the intrusion of water and oxygen, so the isolation layer 23 in the concave area has a higher water and oxygen inhibition ability, thereby reducing the probability of water and oxygen invading inward through the edge of the isolation layer, and improving the performance of water and oxygen.
  • Package reliability At the same time, by arranging the protrusions 24, the length of the isolation layer 23 is extended, that is, the water and oxygen intrusion path is extended, thereby further reducing the probability of water and oxygen intrusion, and improving the packaging reliability.
  • the embodiment of the present application does not limit the number of the protrusions 24 .
  • the number of protrusions 24 is greater than or equal to three and less than or equal to six. Since the more the number of protrusions 24 is, the stronger the barrier capability of water and oxygen is, but at the same time, the size of the frame area SS will also increase accordingly. By setting the number of protrusions 24 to 3-6, a compromise can be achieved between suppressing the intrusion of water and oxygen and reducing the size of the frame.
  • FIG. 3 is a schematic structural diagram of a protrusion provided by an embodiment of the present application. 2 and 3, the protrusions 24 surround the display area AA.
  • the protrusion 24 includes a first section S 1 and a second section S 2 parallel to the array substrate 21 respectively, and the second section S 2 is located between the first section S 1 and the array substrate 21 .
  • the orthographic projection of the second section S2 on the first section S1 falls within the first section S1.
  • both the first sidewall 241 and the second sidewall 242 corresponding to the protrusion 24 include the concave area 240, thereby further improving the package reliability.
  • the protrusions 24 include a first surface B 1 in contact with the array substrate 21 and a second surface B 2 opposite to the first surface B 1 .
  • the protrusions 24 The width gradually increases from the first surface B1 to the second surface B2.
  • the width of the protrusion 24 refers to the vertical distance between the cross section parallel to the array substrate 21 and the first intersection line of the first side wall 241 of the protrusion 24 and the second intersection line with the second side wall 242 , and the vertical distance is The length of the vertical line.
  • the cross section of the protrusion 24 is an inverted trapezoid.
  • the protrusions 24 are formed by photocuring a negative photoresist, wherein the negative photoresist is mainly a polymer containing epoxy groups, vinyl groups or episulfides.
  • the materials for forming the protrusions 24 include, but are not limited to, high molecular polymers such as epoxy resin, polymethyl methacrylate, and polyimide.
  • FIG. 4 is a schematic diagram of a manufacturing process of a protrusion provided by an embodiment of the present application.
  • the organic layer 240 is first deposited on the array substrate 21 by means of inkjet printing or silk-screen deposition, and then the organic layer 240 is patterned through exposure and development.
  • the exposure degree decreases as the depth increases, that is, the deeper the position is, the easier it is to be developed. Therefore, the developed negative-tone adhesive forms an inverted trapezoidal protrusion 24 .
  • the included angle ⁇ between the sidewall of the inverted trapezoidal protrusion 24 and the array substrate 21 is greater than 0° and less than or equal to 60°.
  • the frame area SS of the array substrate 21 includes a base substrate and an organic layer located on the base substrate, the organic layer includes protrusions 24, and the protrusions 24 are located on the surface of the organic layer away from the base substrate, that is, the protrusions 24 and the organic layer are integrally formed.
  • the inverted trapezoidal protrusions 24 are formed on the array substrate 21 , and the process is simple and easy to implement.
  • FIG. 5 is a schematic diagram of a manufacturing process of the bump provided by another embodiment of the present application.
  • the protrusion 34 includes a first surface B 1 in contact with the array substrate 21 and a second surface B 2 opposite to the first surface B 1 , and the protrusion 24 has a width from the first surface B 1 to the second surface B2 first decreased and then increased.
  • the cross section of the protrusion 34 is approximately I-shaped.
  • the protrusions 24 are formed of a metallic material. Since the adhesion between inorganic materials and inorganic materials is stronger than that between organic materials and inorganic materials, the use of metal to form the protrusions 34 can further improve the protrusions compared to the use of organic materials to form the protrusions 34 Adhesion between 34 and isolation layer 23.
  • the I-shaped protrusions 24 can be prepared by the following steps. Referring to FIG. 5 for the application, first, a metal layer 340 is deposited on the array substrate 21, and then a protective adhesive 341 is coated on the metal layer 340; then an anisotropic etching process is used, and the etching rate is controlled to increase first as the etching depth increases After reducing, the I-shaped protrusion 34 is obtained; finally, the protective glue 341 is removed.
  • the array substrate 21 includes a wiring layer, and the wiring layer includes bumps 24 .
  • the bumps 24 and the circuit traces in the array substrate 21 are prepared synchronously, and the formation material of the bumps 24 is the same as that of the circuit traces in the array substrate 21 , such as titanium-aluminum-titanium alloy.
  • an opening is further opened at the position corresponding to the edge region SS of the array substrate 21 in the existing mask for preparing the wiring layer, so as to deposit a metal layer in the edge region SS, and then an anisotropic etching process is used to form a shape.
  • Raised 34 is used to form a shape.
  • the I-shaped protrusions 24 are formed on the array substrate 21 , and the process is simple and easy to implement.
  • the display panel 20 further includes a dam located in the frame area SS of the array substrate 21 , the dam is located on the side of the protrusion 24 close to the display area AA, and the isolation layer 23 further covers the dam.
  • the frame area SS of the array substrate 21 is provided with a first dam 251 and a second dam 252 that surround the display area AA in sequence, and the protrusion 24 surrounds the second dam 252 .
  • the first dam 251 is used to define the boundary of the organic encapsulation layer 222 , that is, theoretically, the boundary of the organic encapsulation layer 222 terminates at the side of the first dam 251 close to the display area AA.
  • the second dam 252 is used to define the boundary of the first inorganic encapsulation layer 221 and the second inorganic encapsulation layer 223 , that is, theoretically, the boundary of the first inorganic encapsulation layer 221 and the second inorganic encapsulation layer 223 terminates at the second dam 252 .
  • the first dam 251 and the second dam 252 can further block the intrusion of water and oxygen from the edge of the package structure 22 .
  • the first inorganic encapsulation layer 221 and the second inorganic encapsulation layer 223 will cross the second dam 252, and the second dam 252
  • a shadow area Q of the inorganic encapsulation layer is formed on the side away from the display area AA, and the protrusion 24 is located in the shadow area Q of the inorganic encapsulation layer.
  • the protrusions 24 can function.
  • the display panel 20 further includes an encapsulation structure 22 stacked on the side of the isolation layer 23 away from the array substrate 21 , the orthographic projection of the encapsulation structure 22 on the array substrate 21 and the isolation layer 23 are The orthographic projections on the array substrate 21 are coincident.
  • the encapsulation structure 22 includes a first inorganic encapsulation layer 221 , an organic encapsulation layer 222 and a second inorganic encapsulation layer 223 stacked on the array substrate 21 in sequence.
  • the steps of forming the encapsulation structure 22 are as follows: deposit a first inorganic encapsulation layer 221 on the display area AA and inside the second bank 252 by a CVD method, and the thickness may be 0.5-1.5 microns. Since there is a certain distance between the mask and the array substrate 21 , the first inorganic encapsulation layer 221 will cross the second bank 252 . Then, an organic material is deposited inside the first dam 251 by inkjet printing, and after leveling and UV curing, an organic encapsulation layer 252 is formed, and the thickness of the organic encapsulation layer 252 may be 4-10 microns.
  • a second inorganic encapsulation layer 223 is deposited again within the second dam 252 and on the organic encapsulation layer 222, and the thickness may be 0.5 micrometers to 1.5 micrometers. Likewise, since the mask and the array substrate 21 are spaced apart by a certain distance, the second inorganic encapsulation layer 223 also crosses the second bank 252 . The process of depositing the inorganic encapsulation layer multiple times together forms the shadow area Q of the inorganic barrier layer.
  • the frame area SS of the array substrate 21 includes a plurality of film layers stacked in sequence, and one end of the protrusion 24 close to the array substrate 21 is embedded in at least one of the plurality of film layers.
  • the frame area SS of the array substrate 21 includes a base substrate and an organic layer on the base substrate, and the protrusions 24 are embedded in the organic layer.
  • the edge region of the display panel 20 is flexible, the display panel is suitable for preparing a curved screen, and the protrusions 24 are embedded in the organic layer, which can avoid cracks at the position where the protrusions 24 contact the organic layer during the process of forming the curved screen. Improve reliability.
  • FIG. 6 is a structural block diagram of a display device provided by an embodiment of the present application.
  • the display device 50 may be a TV, a tablet battery, a mobile phone, or the like. As shown in FIG. 6 , the display device 50 includes a display panel 51 , a storage module 52 and a processing module 53 .
  • the storage module 52 is used for storing media information. Specifically, the encoder performs analog-to-digital conversion according to coding rules, converts pixel information, such as pixel color, grayscale, contrast, etc., into binary numbers, and stores the binary numbers in the storage module 52 .
  • the processing module 53 is connected to the display panel 51 and the storage module 52 for displaying media information on the display panel 51 . Specifically, the processing module 53 controls the power supply of the power module to the other modules. After the power supply module supplies power, the processing module 53 accepts the image digital information stored in the storage module 52, performs digital-to-analog conversion on the image digital information, that is, converts the binary digital into original image information, and transmits it to the display panel for display.
  • the display device 50 provided according to the various embodiments of the present application and the display panel provided by any of the above embodiments are based on the same application concept. Details not described in the display device 50 can be found in the display panel, which will not be repeated here.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
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  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

一种显示面板，解决了现有技术中水氧易从隔离层边缘入侵的问题。显示面板包括阵列基板，包括显示区域和环绕显示区域的边框区域；凸起，位于边框区域，凸起包括靠近显示区域一侧的第一侧壁和远离显示区域一侧的第二侧壁，第一侧壁和第二侧壁中的至少一个包括内凹区域；以及隔离层，叠置在所述阵列基板和所述凸起的一侧，且所述凸起位于所述隔离层在所述阵列基板上的正投影内。

Description

显示面板 技术领域
本申请涉及显示技术领域，具体涉及一种显示面板。
背景技术
现有的显示面板通常包括设置在有机发光结构层和封装结构之间的隔离层，由于隔离层的边缘暴露于空气中，容易导致水氧从边缘入侵，影响封装可靠性。
发明内容
有鉴于此，本申请实施例提供了一种显示面板，以解决现有技术中水氧易从隔离层边缘入侵的问题。
本申请第一方面提供了一种显示面板，包括：阵列基板，包括显示区域和环绕显示区域的边框区域；凸起，位于边框区域，凸起包括靠近显示区域一侧的第一侧壁和远离显示区域一侧的第二侧壁，第一侧壁和第二侧壁中的至少一个包括内凹区域；以及隔离层，叠置在阵列基板和凸起的一侧，且凸起位于隔离层在阵列基板上的正投影内。
根据本申请提供的显示面板，通过设置凸起，并在凸起的第一侧壁和/或第二侧壁上形成内凹区域。这样，由于内凹区域不在沉积方向上，因此需要通过离子或原子的扩散作用沉积成膜，导致后续制备的隔离层在内凹区域成膜厚度减薄，甚至断开。又由于隔离层的厚度减薄可有效抑制水氧入侵，因此，内凹区域的隔离层可以抑制水氧入侵，进而从整体上降低了水氧经隔离层边缘向内入侵的概率，提高了封装可靠性。与此同时，通过设置凸起，相当于延长了隔离层的长度，即延长了水氧入侵路径，从而进一步降低了水氧入侵的概率，提高了封装可靠性。
附图说明
图1所示为本申请一实施例提供的显示面板的结构示意图。
图2所示为本申请另一实施例提供的显示面板的结构示意图。
图3为本申请一实施例提供的凸起的结构示意图。
图4为本申请一实施例提供的凸起的制备过程示意图。
图5为本申请另一实施例提供的凸起的制备过程示意图。
图6所示为本申请一实施例提供的显示装置的结构框图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
图1所示为本申请一实施例提供的显示面板的结构示意图。如图1所示，显示面板10包括设置在有机发光结构层110和封装结构12之间的隔离层13。隔离层13可以阻挡制备封装结构12的过程中产生的等离子体，以避免等离子体对有机发光结构层110产生不良影响，进而影响显示效果。隔离层13的制备过程采用和封装结构12中的无机封装层121相同的掩膜版，因此，如图1所示，隔离层13覆盖有机发光结构层110所在的显示区域AA的同时，进一步延伸到阵列基板11的
边框区域SS，并且封装结构12不会覆盖隔离层13的侧壁，隔离层13的侧壁直接暴露在空气中。这种情况下，由于隔离层13的致密性低于封装结构12中的无机封装层121的致密性，因此空气中的水氧容易从隔离层13的侧壁向内入侵，降低封装可靠性。
有鉴于此，参阅图2，本申请另一实施例提供了一种显示面板。如图2所示，显示面板20包括阵列基板21、隔离层23和凸起24。具体而言，阵列基板21包括显示区域AA和环绕显示区域AA的边框区域SS。凸起24位于边 框区域SS，包括靠近显示区域AA一侧的第一侧壁241和远离显示区域AA一侧的第二侧壁242，第一侧壁241和第二侧壁242中的至少一个包括内凹区域。隔离层23叠置在阵列基板21和凸起24的一侧，且凸起24位于隔离层23在阵列基板21上的正投影内。
阵列基板21包括衬底基板和形成于衬底基板上的薄膜晶体管(Thin-film transistor，TFT)阵列。衬底基板可以由诸如玻璃材料、金属材料或包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯或聚酰亚胺等塑料材料中的任一种形成。TFT阵列可直接设置在衬底基板上。应当理解，TFT阵列除了包括薄膜晶体管之外，还包括平坦化层、钝化层等膜层，在此不作限定。
隔离层23可以是单个膜层，也可以是依次叠置的多个膜层组成的复合膜层。隔离层23可以采用任意具有水氧阻隔作用的无机材料制备得到。在一个实施例中，隔离层23的材料为氧化硅。
阵列基板21被划分为显示区域AA和环绕显示区域AA的边框区域SS，显示区域AA设置有用于发光的有机发光结构层210，边框区域SS设置有凸起24，阻隔层23叠置在阵列基板21上，覆盖有机发光结构层210和凸起23。
有机发光结构层210包括依次设于阵列基板21上的像素限定层、第一电极层、发光层和第二电极层。其中，像素限定层上设有开口，以露出第一电极层。发光层设于像素界定层的开口内且位于露出的第一电极层上。第二电极层覆盖发光层。发光层可为发射红光的子像素、发射绿光的子像素或发射蓝光的子像素。在一个实施例中，第一电极层为阳极，第二电极层为阴极。
在本实施例中，凸起24凸出于阵列基板的设置凸起的表面的高度大于或等于1微米并且小于或等于10微米。隔离层23包括氧化硅层，氧化硅层的厚度大于或等于5埃并且小于或等于2000埃，从现有成膜设备的精密度考虑，氧化硅层的厚度为600埃时更易制备。
凸起24的第一侧壁241和/或第二侧壁242上的内凹区域是指在第一侧壁241和/或第二侧壁242上形成的周围凸出并且中间凹陷的区域，也即中间相比于周围向靠近凸起24的内部凹陷的区域。
这种情况下，当利用化学气相沉积(Chemical Vapor Deposition,CVD)或原子层沉积(Atomic layer deposition,ALD)等工艺制备隔离层23时，由于凸起24的内凹区域不在沉积方向上，因此需要通过离子或原子的扩散作用沉积成膜，导致后续制备的隔离层23在内凹区域成膜厚度减薄，甚至断开。又由于隔离层23的厚度减薄有利于抑制水氧入侵，因此内凹区域的隔离层23具有更高的水氧抑制能力，从而降低了水氧经隔离层边缘向内入侵的概率，提高了封装可靠性。与此同时，通过设置凸起24，相当于延长了隔离层23的长度，即延长了水氧入侵路径，从而进一步降低了水氧入侵的概率，提高了封装可靠性。
需要说明的是，本申请实施例对凸起24的数量不作限定。在一个实施例中，凸起24的数量大于或等于3个并且小于或等于6个。由于凸起24数量越多对水氧的阻隔能力越强，但同时边框区域SS的尺寸也会相应增大。将凸起24的数量设置在3-6个，可以在抑制水氧入侵和减小边框尺寸之间取得折中。
图3为本申请一实施例提供的凸起的结构示意图。结合图2和图3所示，凸起24环绕显示区域AA。凸起24包括分别平行于阵列基板21的第一截面S 1和第二截面S 2，第二截面S 2位于第一截面S 1和阵列基板21之间。第二截面S 2在第一截面S 1上的正投影落入第一截面S 1内。这种情况下，相当于凸起24的第一侧壁241和第二侧壁242均包括内凹区域240，从而进一步提高封装可靠性。
具体而言，在一个实施例中，如图3所示，凸起24包括与阵列基板21接触的第一表面B 1和与第一表面B 1相对设置的第二表面B 2，凸起24的宽度自第一表面B 1至第二表面B 2逐渐增大。凸起24的宽度是指平行于阵列基板21的截面与凸起24的第一侧壁241的第一相交线和与第二侧壁242的第二相交线之间的垂直距离，垂直距离即垂线的长度。
例如，结合图2和图3所示，在由显示区域AA指向边框区域SS的方向上，凸起24的截面为倒梯形。这种情况下，在一个实施例中，凸起24由负性光刻胶经光固化形成，其中负性光刻胶主要为含有环氧基、乙烯基或环硫化物 等的聚合物。在一个实施例中，凸起24的形成材料包括但不限于环氧树脂、聚甲基丙烯酸甲酯、聚酰亚胺等高分子聚合物。
倒梯形的凸起24可以通过如下步骤制备。图4为本申请一实施例提供的凸起的制备过程示意图。参阅图4，具体而言，首先通过喷墨打印或丝印沉积的方式在阵列基板21上沉积有机层240，再经过曝光和显影使有机层240图案化。对于负性胶而言，随着深度增加曝光程度减弱，即越深的位置越易被显影，因此显影后的负性胶形成倒梯形的凸起24。
在本实施例中，倒梯形凸起24的侧壁和阵列基板21之间的夹角θ大于0°并且小于或等于60°。
在一个实施例中，阵列基板21的边框区域SS包括衬底基板和位于衬底基板上的有机层，有机层包括凸起24，凸起24位于有机层远离衬底基板的表面，即凸起24和有机层一体成型。
根据本实施例提供的显示面板，在阵列基板21上形成倒梯形凸起24，工艺简单，易于实现。
在一个实施例中，如图5所示为本申请另一实施例提供的凸起的制备过程示意图。参阅图5，凸起34包括与阵列基板21接触的第一表面B 1和与第一表面B 1相对设置的第二表面B 2，凸起24的宽度自第一表面B 1至第二表面B 2先减小后增大。
例如，结合图2和图5所示，在由显示区域AA指向边框区域SS的方向上，凸起34的截面大致呈工形。这种情况下，在一个实施例中，凸起24由金属材料形成。由于无机材料和无机材料之间的附着力相比于有机材料和无机材料的附着力更强，因此采用金属形成凸起34相比于采用有机材料形成凸起34而言，可以进一步提高凸起34和隔离层23之间的附着力。
工形凸起24可以通过如下步骤制备。申请参阅图5，首先在阵列基板21上沉积金属层340，然后在金属层340上涂覆保护胶341；接着采用各向异性刻蚀工艺，随着刻蚀深度增加控制刻蚀速率先增大后减小，得到工形凸起34；最后去除保护胶341。
在一个实施例中，阵列基板21包括布线层，布线层包括凸起24。这种情况下，凸起24和阵列基板21中的电路走线同步制备，凸起24的形成材料和阵列基板21中的电路走线的形成材料相同，例如为钛铝钛合金。具体而言，在现有的制备布线层的掩膜版对应阵列基板21的边缘区域SS的位置进一步开设开口，用以在边缘区域SS沉积金属层，后续通过各向异性刻蚀工艺形成工形凸起34。
根据本实施例提供的显示面板，在阵列基板21上形成工形凸起24，工艺简单，易于实现。
在一个实施例中，如图2所示，显示面板20还包括位于阵列基板21的边框区域SS的堤坝，堤坝位于凸起24靠近显示区域AA的一侧，隔离层23进一步覆盖堤坝。具体而言，阵列基板21的边框区域SS设置有依次环绕显示区域AA的第一堤坝251和第二堤坝252，凸起24环绕第二堤坝252。其中，第一堤坝251用来定义有机封装层222的边界，即理论上，有机封装层222的边界终止于第一堤坝251靠近显示区AA的一侧。第二堤坝252用来定义第一无机封装层221和第二无机封装层223的边界，即理论上，第一无机封装层221和第二无机封装层223的边界终止于第二堤坝252。第一堤坝251和第二堤坝252还可以进一步阻挡水氧从封装结构22的边缘入侵。
应当理解，由于CVD成膜时采用的掩膜版和阵列基板21之间间隔一定距离，因此第一无机封装层221和第二无机封装层223会越过第二堤坝252，而在第二堤坝252远离显示区域AA的一侧形成一块无机封装层阴影区Q，凸起24位于无机封装层阴影区Q内。这种情况下，凸起24便可以发挥作用了。
在一个实施例中，如图2所示，显示面板20还包括叠置在隔离层23远离阵列基板21一侧的封装结构22，封装结构22在阵列基板21上的正投影和隔离层23在阵列基板21上的正投影重合。封装结构22包括依次叠置在阵列基板21上的第一无机封装层221、有机封装层222和第二无机封装层223。这种情况下，隔离层23和封装结构22中的无机封装层，即第一无机封装层221和第二无机封装层223，共用同一掩膜版，降低成本。
具体地，形成封装结构22的步骤如下：通过CVD方法在显示区域AA上、第二堤坝252内侧沉积第一无机封装层221，厚度可为0.5微米-1.5微米。由于掩膜版和阵列基板21之间间隔一定距离，因此第一无机封装层221会越过第二堤坝252。再通过喷墨打印在第一堤坝251以内沉积有机材料，经流平和紫外固化，形成有机封装层252，有机封装层252的厚度可为4微米-10微米。然后在第二堤坝252以内、有机封装层222上再次沉积第二无机封装层223，厚度可为0.5微米-1.5微米。同样，由于掩膜版和阵列基板21之间间隔一定距离，因此第二无机封装层223也会越过第二堤坝252。多次沉积无机封装层的过程共同形成无机阻隔层阴影区Q。
在一个实施例中，如图2所示，阵列基板21的边框区域SS包括依次叠置的多个膜层，凸起24靠近阵列基板21的一端嵌入多个膜层中的至少一个。
例如，在图2所示的显示面板20中，阵列基板21的边框区域SS包括衬底基板和位于衬底基板上的有机层，凸起24嵌入有机层。这种情况下，显示面板20的边缘区域具有柔性，显示面板适于制备曲面屏，凸起24嵌入有机层，可以避免形成曲面屏的过程中，导致凸起24和有机层接触的位置裂纹，提高可靠性。
本申请还提供了一种显示装置。如图6所示为本申请一实施例提供的显示装置的结构框图，该显示装置50可为电视、平板电能、手机等。如图6所示，显示装置50包括显示面板51、存储模块52和处理模块53。
存储模块52用于存储媒体信息。具体而言，编码器根据编码规则进行模数转换，将像素信息，例如像素的颜色、灰度、对比度等，转换为二进制数码，并将二进制数码储存在存储模块52。
处理模块53与显示面板51和存储模块52连接，用于将媒体信息显示于显示面板51。具体而言，处理模块53控制电源模块对其他各模块的电能供给。电源模块供电后，处理模块53接受存储在存储模块52的图像数字信息，将图像数字信息进行数模转换，即将二进制数码转换为原始的图像信息，再传送到显示面板进行显示。
根据本申请各实施例提供的显示装置50和上述任一实施例提供的显示面板基于同样的申请构思，未在显示装置50部分描述的细节可参阅显示面板部分，这里不予赘述。
为了例示和描述的目的已经给出了以上描述。此外，此描述不意图将本申请的实施例限制到在此公开的形式。尽管以上已经讨论了多个示例方面和实施例，但是本领域技术人员将认识到其某些变型、修改、改变、添加和子组合。

Claims (17)

  1. 一种显示面板，其中，包括：
    阵列基板，包括显示区域和环绕所述显示区域的边框区域；
    凸起，位于所述边框区域，所述凸起包括靠近所述显示区域一侧的第一侧壁和远离所述显示区域一侧的第二侧壁，所述第一侧壁和所述第二侧壁中的至少一个包括内凹区域；以及
    隔离层，叠置在所述阵列基板和所述凸起的一侧，且所述凸起位于所述隔离层在所述阵列基板上的正投影内。
  2. 根据权利要求1所述的显示面板，其中，所述凸起环绕所述显示区域；所述凸起包括分别平行于所述阵列基板的第一截面和第二截面，所述第二截面位于所述第一截面和所述阵列基板之间；所述第二截面在所述第一截面上的正投影落入所述第一截面内。
  3. 根据权利要求1所述的显示面板，其中，所述凸起包括与所述阵列基板接触的第一表面和与所述第一表面相对设置的第二表面；所述凸起的宽度自所述第一表面至所述第二表面逐渐增大。
  4. 根据权利要求3所述的显示面板，其中，所述凸起的形成材料包括有机材料。
  5. 根据权利要求3所述的显示面板，其中，所述凸起在垂直于所述阵列基板的方向上的截面为倒梯形。
  6. 根据权利要求1所述的显示面板，其中，所述凸起包括与所述阵列基板接触的第一表面和与所述第一表面相对设置的第二表面；所述凸起的宽度自所述第一表面至所述第二表面先减小后增大。
  7. 根据权利要求6所述的显示面板，其中，所述凸起的形成材料包括金属。
  8. 根据权利要求6所述的显示面板，其中，所述凸起在垂直于所述阵列基板的方向上的截面为工形。
  9. 根据权利要求1-5中任一所述的显示面板，其中，所述阵列基板的所述边框区域包括衬底基板和位于所述衬底基板上的有机层，所述有机层包括所述凸起，所述凸起位于所述有机层远离所述衬底基板的表面。
  10. 根据权利要求1、2、6-8中任一所述的显示面板，其中，所述阵列基板包括金属层，所述金属层包括所述凸起。
  11. 根据权利要求1-7中任一所述的显示面板，所述阵列基板的所述边框区域包括依次叠置的多个膜层，所述凸起靠近所述阵列基板的一端嵌入所述多个膜层中的至少一个。
  12. 根据权利要求1-7中任一所述的显示面板，其中，所述凸起凸出于所述阵列基板的设置所述凸起的表面的高度大于或等于1微米并且小于或等于10微米。
  13. 根据权利要求1-7中任一所述的显示面板，其中，还包括：叠置在所述隔离层远离所述阵列基板一侧的封装结构，所述封装结构在所述阵列基板上的正投影和所述隔离层在所述阵列基板上的正投影重合。
  14. 根据权利要求13中任一所述的显示面板，其中，所述封装结构包括依次叠置在所述阵列基板上的第一无机封装层、有机封装层和第二无机封装层。
  15. 根据权利要求14所述的显示面板，其中，还包括位于阵列基板的边框区域的堤坝，所述堤坝位于所述凸起靠近所述显示区域的一侧，所述隔离层进一步覆盖所述堤坝。
  16. 根据权利要求15所述的显示面板，其中，所述堤坝包括依次环绕所述显示区域的第一堤坝和第二堤坝，所述凸起环绕所述第二堤坝，所述第一堤坝定义所述有机封装层的边界，所述第二堤坝定义所述第一无机封装层和第二无机封装层的边界。
  17. 根据权利要求16所述的显示面板，其中，所述第二堤坝远离所述显示区域的一侧形成无机封装层阴影区，所述凸起位于所述无机封装层阴影区内。
PCT/CN2021/104547 2020-09-09 2021-07-05 显示面板 Ceased WO2022052607A1 (zh)

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