WO2022039522A1 - Film mince de pérovskite comportant un joint de grain cristallin passivé, son procédé de préparation et dispositif électronique le comprenant - Google Patents
Film mince de pérovskite comportant un joint de grain cristallin passivé, son procédé de préparation et dispositif électronique le comprenant Download PDFInfo
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- WO2022039522A1 WO2022039522A1 PCT/KR2021/011034 KR2021011034W WO2022039522A1 WO 2022039522 A1 WO2022039522 A1 WO 2022039522A1 KR 2021011034 W KR2021011034 W KR 2021011034W WO 2022039522 A1 WO2022039522 A1 WO 2022039522A1
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- Prior art keywords
- perovskite
- thin film
- grain boundary
- lewis base
- perovskite thin
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- 239000010409 thin film Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000002879 Lewis base Substances 0.000 claims abstract description 64
- 150000007527 lewis bases Chemical class 0.000 claims abstract description 63
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 claims description 76
- 239000013078 crystal Substances 0.000 claims description 65
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 21
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 20
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 15
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 14
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- GLUUGHFHXGJENI-UHFFFAOYSA-N diethylenediamine Natural products C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 9
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- SYSGWPLRRPINQC-UHFFFAOYSA-N (2-methylpyridin-4-yl)methanamine Chemical compound CC1=CC(CN)=CC=N1 SYSGWPLRRPINQC-UHFFFAOYSA-N 0.000 claims description 7
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 claims description 7
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 claims description 7
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 7
- 229910001507 metal halide Inorganic materials 0.000 claims description 6
- 150000005309 metal halides Chemical class 0.000 claims description 6
- 125000004193 piperazinyl group Chemical group 0.000 claims description 6
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims description 4
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 125000003107 substituted aryl group Chemical group 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- -1 Lewis base compound Chemical class 0.000 description 24
- 238000000137 annealing Methods 0.000 description 14
- 125000000217 alkyl group Chemical group 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 229920006395 saturated elastomer Polymers 0.000 description 12
- 125000001072 heteroaryl group Chemical group 0.000 description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical group ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 10
- 150000003254 radicals Chemical class 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 8
- 125000005842 heteroatom Chemical group 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000000623 heterocyclic group Chemical group 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000001161 time-correlated single photon counting Methods 0.000 description 4
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 3
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000001301 oxygen Chemical group 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 description 2
- WGLLSSPDPJPLOR-UHFFFAOYSA-N 2,3-dimethylbut-2-ene Chemical group CC(C)=C(C)C WGLLSSPDPJPLOR-UHFFFAOYSA-N 0.000 description 2
- 125000005916 2-methylpentyl group Chemical group 0.000 description 2
- 125000003469 3-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000005917 3-methylpentyl group Chemical group 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 125000003282 alkyl amino group Chemical group 0.000 description 2
- 125000004541 benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 2
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001188 haloalkyl group Chemical group 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 2
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000002950 monocyclic group Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 150000002892 organic cations Chemical class 0.000 description 2
- 125000002971 oxazolyl group Chemical group 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 125000000714 pyrimidinyl group Chemical group 0.000 description 2
- 239000011593 sulfur Chemical group 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 description 1
- 125000006527 (C1-C5) alkyl group Chemical group 0.000 description 1
- 125000006654 (C3-C12) heteroaryl group Chemical group 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 1
- 125000003562 2,2-dimethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000003660 2,3-dimethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000003764 2,4-dimethylpentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 125000004336 3,3-dimethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004337 3-ethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(C([H])([H])C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- QHJPGANWSLEMTI-UHFFFAOYSA-N aminomethylideneazanium;iodide Chemical compound I.NC=N QHJPGANWSLEMTI-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000002785 azepinyl group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000000259 cinnolinyl group Chemical group N1=NC(=CC2=CC=CC=C12)* 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 125000000532 dioxanyl group Chemical group 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000001786 isothiazolyl group Chemical group 0.000 description 1
- 125000000842 isoxazolyl group Chemical group 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 125000002757 morpholinyl group Chemical group 0.000 description 1
- AIDQCFHFXWPAFG-UHFFFAOYSA-N n-formylformamide Chemical compound O=CNC=O AIDQCFHFXWPAFG-UHFFFAOYSA-N 0.000 description 1
- 125000001715 oxadiazolyl group Chemical group 0.000 description 1
- 125000003566 oxetanyl group Chemical group 0.000 description 1
- 125000004592 phthalazinyl group Chemical group C1(=NN=CC2=CC=CC=C12)* 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- GLBQVJGBPFPMMV-UHFFFAOYSA-N sulfilimine Chemical compound S=N GLBQVJGBPFPMMV-UHFFFAOYSA-N 0.000 description 1
- 125000005555 sulfoximide group Chemical group 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 125000002053 thietanyl group Chemical group 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a method for manufacturing a perovskite thin film having passivated grain boundaries and an electronic device including the same.
- the present invention provides a passivation ( passivation) and confirmed that the efficiency of an electronic device including the same can be improved, and the present invention has been completed.
- the present invention provides a perovskite thin film having a passivated grain boundary and a method for manufacturing the same.
- the present invention provides an electronic device using the perovskite thin film of the present invention.
- the present invention provides a perovskite thin film having a passivated grain boundary, the perovskite thin film of the present invention,
- the Lewis base according to an embodiment of the present invention may be a compound including any one or two or more electron donor elements selected from N, O, and S, and preferably a pKa value of 8 or more.
- the Lewis base according to an embodiment of the present invention is piperazine, morpholine, 4-dimethylaminopyridine, piperidine, 1-methylpiperidine, pyrrolidine, 1-methylpyrrolidine, diethylamine , triethylamine, tetramethylethylenediamine, and methyl-4-pyridinemethylamine may be any one or two or more selected from, but is not limited thereto.
- the perovskite thin film according to an embodiment of the present invention may be formed by heat-treating a perovskite precursor solution containing a compound satisfying the following Chemical Formula 1 and a metal halide satisfying the following Chemical Formula 2.
- A is Cs + or an organocation
- M is selected from the group consisting of Pb, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, Sn, Ge, and combinations thereof;
- X is Br - , Cl - or I - .
- the organocation of A in Formula 1 may be a compound represented by Formula 3 or Formula 4 below.
- R 1 to R 4 are each independently selected from hydrogen and unsubstituted or substituted (C1-C6)alkyl
- R 5 to R 8 are each independently selected from hydrogen and unsubstituted or substituted (C1-C20)alkyl or unsubstituted or substituted aryl.
- the present invention provides a method for manufacturing a perovskite thin film having an immobilized grain boundary of the present invention, the method for manufacturing a perovskite thin film of the present invention is
- the Lewis base solution according to an embodiment of the present invention may have a pKa value of 8 or more, specifically piperazine, morpholine, 4-dimethylaminopyridine, piperidine, 1-methylpiperidine, pyrrolidine, and 1 -Methylpyrrolidine, diethylamine, triethylamine, tetramethylethylenediamine, and may be any one or two or more selected from methyl-4-pyridinemethylamine, but is not limited thereto.
- the primary heat treatment according to an embodiment of the present invention may be performed at a temperature of 50 to 300 °C, and the secondary heat treatment may be performed at a temperature of 50 to 150 °C.
- the present invention provides an electronic device comprising the perovskite thin film of the present invention.
- the perovskite thin film according to an embodiment of the present invention effectively inhibits the oxidation of metal cations in the perovskite structure by placing Lewis base crystals at the grain boundaries of the perovskite structure crystals, thereby forming the perovskite structure. By making it stable, the efficiency of the electronic device including the same is improved.
- the method of manufacturing a perovskite thin film according to an embodiment of the present invention is different from the conventionally known method of adding a Lewis base compound to a perovskite precursor solution, after forming a perovskite structure crystal
- the Lewis base is not only evenly distributed at the perovskite grain boundary, but also stably maintained on the perovskite thin film at high temperature, thereby maintaining the perovskite thin film grain boundary. can maintain the immobilization of
- the electronic device including the perovskite thin film of the present invention has surprisingly improved properties.
- Example 1 is a photograph (b) of a thin film after spin-coating DMAP on a crystal (a), a substrate prepared in Preparation Example 1, and heating it at 100° C. for 30 minutes, and a perovskite thin film prepared in Example 1 SEM image of (c) is shown.
- Figure 2 shows the time-dependent SEM image of the perovskite thin film of Example 1 of the present invention.
- FIG. 3 shows SEM images of non-annealing and annealing when 4-dimethylaminopyridine is applied.
- FIG. 5 shows SEM images for each concentration of 4-dimethylaminopyridine of the perovskite thin film.
- Figure 6 shows the X-ray diffraction pattern for each concentration of 4-dimethylaminopyridine of the perovskite thin film.
- TCSPC Time-Correlated Single Photon Counting
- Example 8 is a graph showing the strength of adhesion between the perovskite thin film and the hole transport layer prepared in Example 1 and Comparative Example 1 of the present invention.
- Example 9 is a graph showing the long-term stability of the perovskite solar cells prepared in Example 1 and Comparative Example 1 of the present invention.
- DMAP 4-dimethylaminopyridine
- alkyl refers to a saturated straight-chain or branched non- having 1 to 10 carbon atoms, preferably 1 to 6 carbon atoms, more preferably 1 to 4 carbon atoms (when the number of carbon atoms is not particularly limited). It means a cyclic hydrocarbon. "Lower alkyl” means straight-chain or branched alkyl having 1 to 4 carbon atoms.
- saturated straight chain alkyls are -methyl, -ethyl, -n-propyl, -n-butyl, -n-pentyl, -n-hexyl, -n-heptyl, -n-octyl, -n-nonyl and -n- contains decyl
- saturated branched alkyl is -isopropyl, -sec-butyl, -isobutyl, -tert-butyl, isopentyl, 2-methylhexyl, 3-methylbutyl, 2-methylpentyl, 3- Methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 4-methylhexyl, 5-
- C1-6 alkyl When described as “C1-6" in the present specification, it means that it has 1 to 6 carbon atoms.
- C 1-6 alkyl means alkyl having 1 to 6 carbon atoms.
- heterocycle is a cyclic compound containing a heteroatom, including heterocycloalkyl and heteroaryl, and may be a C3-C20, preferably C3-C12, more preferably C3-C8 heterocyclic compound. there is.
- heterocycloalkyl has 2 to 12, preferably 2 to 10 carbon atoms and 1 to 6 heteroatoms selected from the group consisting of nitrogen, oxygen and sulfur, for example 1 to 5 refers to a stable 3- to 18-membered saturated or partially unsaturated radical consisting of heteroatoms, 1 to 4 heteroatoms, 1 to 3 heteroatoms, or 1 to 2 heteroatoms.
- Exemplary heterocyclealkyls include, but are not limited to, stable 3-15 membered saturated or partially unsaturated radicals, stable 3-12 membered saturated or partially unsaturated radicals, stable 3-9 membered saturated or partially unsaturated radicals, stable 8-membered saturated or partially unsaturated radicals, and stable 8-membered saturated or partially unsaturated radicals. radicals, stable 7-membered saturated or partially unsaturated radicals, stable 6-membered saturated or partially unsaturated radicals, or stable 5-membered saturated or partially unsaturated radicals.
- heteroaryl has at least one heteroatom selected from the group consisting of nitrogen, oxygen and sulfur, and includes 5 to 10 carbon atoms including at least one carbon atom, including mono- and bicyclic ring systems. It is an aromatic heterocycle ring of members.
- heteroaryls include triazolyl, tetrazolyl, oxadiazolyl, pyridyl, furyl, benzofuranyl, thiophenyl, benzothiophenyl, quinolinyl, pyrrolyl, indolyl, oxazolyl, benzoxazolyl ( benzoxazolyl), imidazolyl, benzimidazolyl, thiazolyl, benzothiazolyl, isoxazolyl, pyrazolyl, isothiazolyl, pyridazinyl, pyrimidinyl, pyrazinyl, tria Zinyl, cinnolinyl, phthalazinyl, quinazolinyl, pyrimidyl, oxetanyl, azepinyl, piperazinyl, morpholinyl, dioxanyl, thietanyl and oxazolyl.
- substituted means that the hydrogen atom of the moiety being substituted (eg, alkyl, aryl, heteroaryl, heterocycle, or cycloalkyl) is replaced by a substituent.
- each carbon atom of the group being substituted is unsubstituted by more than two substituents.
- each carbon atom of the group being substituted is unsubstituted by more than one substituent.
- the two hydrogen atoms are replaced by an oxygen attached to the carbon by a double bond.
- substituted substituents are hydrogen, halogen, amino, (C1-C10)alkyl, (C1-C10)alkoxy(C1-C10)alkyl, halo(C1-C10)alkyl, (C6-C12)aryl, (C3-C10)heterocycle or (C3-C12)heteroaryl.
- One aspect of the present invention is a perovskite thin film having a passivated grain boundary.
- Perovskite thin film according to an embodiment of the present invention is a perovskite structure crystal
- the presence of a Lewis base at the grain boundary of the perovskite structure crystal can be found through GIWAX measurement of the perovskite thin film.
- the perovskite thin film according to an embodiment of the present invention a Lewis base is selectively present at the grain boundary of the perovskite structure crystal, thereby preventing defects in the perovskite structure crystal. Therefore, the perovskite thin film of the present invention has excellent properties.
- the Lewis base present at the grain boundary of the perovskite thin film according to an embodiment of the present invention is selectively distributed at the grain boundary interface of the perovskite thin film unlike conventional surface treatment materials, and the formed Lewis base crystal is The passivation is stably maintained even at a high temperature, specifically 100 °C, which greatly improves the efficiency of the electronic device employing it.
- the perovskite thin film according to an embodiment of the present invention has a crystal of a Lewis base at the grain boundary of the perovskite structure crystal. Able to know.
- the electronic device including the perovskite thin film of the present invention has more improved efficiency and durability.
- the Lewis base according to an embodiment of the present invention may be a compound containing any one or two or more electron donor elements selected from N, O, and S, and specifically, any one or two or more selected from N, O and S It may be a C3-C20 heterocyclic compound containing an electron donor element.
- the Lewis base according to an embodiment of the present invention may be a monomolecular C3-C20 heterocyclic compound containing any one or two or more electron donor elements selected from N, O, and S, and is preferably selected from N and O. It may be monomolecular C3-C10 heterocycloalkyl or monomolecular C3-C10 heteroaryl containing at least one.
- the Lewis base according to an embodiment of the present invention may be a mono-molecular C3-C10 heterocycloalkyl or a mono-molecular C3-C10 heteroaryl into which a mono-C1-C10 alkylamino group or a di-C1-C10 alkylamino group is introduced.
- the Lewis base according to an embodiment of the present invention may be a compound represented by the following Chemical Formula 5 or Chemical Formula 6.
- R and R' are independently of each other C1-C5 alkyl
- A is O, S or NR 24 ;
- R 11 , R 12 and R 21 to R 24 are each independently hydrogen or C 1 -C 5 alkyl
- n is an integer from 0 to 4
- m is an integer from 0 to 3.
- R and R' are each independently C1-C3 alkyl;
- A is O, S or NR 24 ;
- R 11 , R 12 , R 21 to R 24 are each independently hydrogen or C 1 -C 3 alkyl;
- n is an integer from 0 to 2, m may be an integer from 0 to 2,
- R and R' are each independently C1-C3 alkyl;
- A is O or NR 24 ;
- R 11 , R 12 , R 21 to R 24 are each independently hydrogen or C 1 -C 3 alkyl;
- n may be an integer from 0 to 1
- m may be an integer from 0 to 1.
- the Lewis base is piperazine, morpholine, 4-dimethylaminopyridine, piperidine, 1-methylpiperidine, pyrrolidine, 1-methylpyrrolidine, diethylamine, triethylamine, tetramethylethylene. It may be any one or two or more selected from diamine and methyl-4-pyridinemethylamine, and preferably, the Lewis base according to an embodiment of the present invention may have a pKa value of 8 or more.
- the perovskite structure crystal according to an embodiment of the present invention may be formed by heat-treating a perovskite precursor solution containing a compound satisfying the following Chemical Formula 1 and a metal halide satisfying the following Chemical Formula 2.
- A is Cs + or an organocation
- M is selected from the group consisting of Pb, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, Sn, Ge, and combinations thereof;
- X is Br - , Cl - or I - .
- the organic cation of A in Formula 1 may be a compound represented by Formula 3 or Formula 4 below.
- R 1 to R 4 are each independently selected from hydrogen and unsubstituted or substituted (C1-C6)alkyl
- R 5 to R 8 are each independently selected from hydrogen and unsubstituted or substituted (C1-C20)alkyl or unsubstituted or substituted aryl.
- the Lewis base employed in the present invention is characterized in that it is a compound containing any one or two or more electron donor elements selected from N, O and S.
- the Lewis base employed in the present invention is characterized in that the pKa value (which is the pKa value in water) is 8 or more, specifically, the pKa value is 9 or more and 13 or less. If the pKa value is less than 8, the passivation effect of the perovskite grain boundaries may be reduced.
- the Lewis base is piperazine, morpholine, 4-dimethylaminopyridine, piperidine, 1-methylpiperidine, pyrrolidine, 1-methylpyrrolidine, diethylamine, triethylamine , may be any one or two or more selected from tetramethylethylenediamine and methyl-4-pyridinemethylamine, but is not limited thereto.
- the Lewis base may be any one or two or more selected from 4-dimethylaminopyridine, 1-methylpiperidine and tetramethylethylenediamine.
- the compounds represented by Chemical Formulas 5 and 6 are uniformly dispersed in the perovskite grain boundaries and then bound, thereby effectively passivating the perovskite grain boundaries. there is.
- the perovskite thin film of the present invention is characterized in that a hole transport layer is formed on the perovskite thin film in which Lewis base crystals are formed at grain boundaries.
- the first step is a step of forming a perovskite structure crystal by applying a perovskite precursor solution to a substrate and performing primary heat treatment.
- a perovskite precursor solution containing an inorganic or organic halide or a metal halide is applied on a substrate and subjected to a primary heat treatment.
- the inorganic or organic halide according to an embodiment of the present invention may satisfy the following formula (1).
- A is Cs + or an organocation
- X is Br - , Cl - or I - .
- the metal halide according to an embodiment of the present invention may satisfy the following formula (2).
- M comprises a metal selected from the group consisting of Pb, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, Sn, Ge, and combinations thereof;
- X is Br - , Cl - or I - .
- the organic cation of A in Formula 1 may be represented by Formula 3 or Formula 4 below.
- R 1 to R 4 are each independently selected from hydrogen and unsubstituted or substituted (C1-C6)alkyl
- R 5 to R 8 are each independently selected from hydrogen and unsubstituted or substituted (C1-C20)alkyl or unsubstituted or substituted aryl.
- Chemical Formula 1 may be selected from CH 3 NH 3 I (methylammonium iodide), CH(NH 2 ) 2 I (formamidinium iodide), or CsI (cesium iodide).
- the perovskite precursor solution may contain 0.8 to 1.2 moles of a metal halide with respect to 1 mole of the inorganic or organic halide.
- the first heat treatment for annealing the applied perovskite precursor solution is not particularly limited as long as the solution is sufficiently dried and the temperature at which the perovskite structure can be stably maintained, but in one embodiment, the heat treatment is 50 to It may be carried out at a temperature of 300 °C for 10 minutes to 4 hours.
- the step of forming a metal oxide thin film may be further performed, and the forming step of the metal oxide thin film may be performed by chemical or physical vapor deposition used in a typical semiconductor process, and ,
- the material of the metal oxide thin film is, for example, Ti oxide, Zn oxide, In oxide, Sn oxide, W oxide, Nb oxide, Mo oxide, Mg oxide, Zr oxide, Sr oxide, Yr oxide, La oxide, V oxide, It may be at least one material selected from Al oxide, Y oxide, Sc oxide, Sm oxide, Ga oxide, SrTi oxide, and composites thereof, and more preferably, at least one material selected from Ti oxide, Sn oxide, and composites thereof. there is.
- the second step is a step of forming a Lewis base crystal at the grain boundary of the perovskite structure by applying a Lewis base solution to the crystals of the perovskite structure and performing secondary heat treatment.
- the Lewis base employed in the present invention may be any one selected from N, O, and S, or a compound containing two or more electron donor elements.
- the Lewis base employed in the present invention is characterized in that the pKa value is 8 or more, specifically, the pKa value is 9 or more and 13 or less. If the pKa value is less than 8, the passivation effect of the perovskite grain boundaries may be reduced.
- the Lewis base is piperazine, morpholine, 4-dimethylaminopyridine, piperidine, 1-methylpiperidine, pyrrolidine, 1-methylpyrrolidine, diethylamine, triethylamine , may be any one or two or more selected from tetramethylethylenediamine and methyl-4-pyridinemethylamine, but is not limited thereto.
- the Lewis base may be any one or two or more selected from 4-dimethylaminopyridine, 1-methylpiperidine and tetramethylethylenediamine.
- the Lewis base of the present invention may be one or two or more compounds selected from the compounds represented by Chemical Formulas 5 and 6.
- the solvent for preparing the Lewis base solution may be used without particular limitation as long as it is a solvent that can dissolve the Lewis base and can be easily removed by volatilization during drying.
- the solvent is chloroform, chlorobenzene, gamma-butyrolactone, formamide, N,N-dimethylformamide, diformamide, acetonitrile, tetrahydrofuran, dimethyl sulfoxide.
- diethylene glycol, 1-methyl-2-pyrrolidone, N,N-dimethylacetamide, acetone, ⁇ -terpineol, ⁇ -terpineol, dihydroterpineol, 2-methoxyethanol , acetylacetone, methanol, ethanol, 2-propanol, butanol, pentanol, hexanol, ketone, diethyl ether, toluene and methyl isobutyl ketone may be any one or two or more selected from.
- the solvent may be any one or two or more selected from chloroform, chlorobenzene, diethyl ether, toluene and 2-propanol.
- the heat treatment temperature for the annealing of the Lewis base solution is not particularly limited, but in one embodiment may be performed at a temperature of 50 to 200° C. for 5 minutes to 20 minutes.
- the annealing of the Lewis base solution may be performed at a temperature of 50 to 150° C., which is a low temperature process, for 5 to 15 minutes.
- the present invention is different from the conventionally known method of adding a Lewis base to a perovskite precursor solution, after preparing a perovskite structure crystal (structure crystal layer), the Lewis base is placed at the grain boundary of the perovskite structure.
- the Lewis base is evenly distributed at the grain boundaries of the perovskite structure crystals, and the Lewis base crystals formed at the grain boundaries are at high temperature.
- the oxidation of metal cations in the perovskite structure is effectively suppressed, and the perovskite structure is stabilized, thereby improving the efficiency of the solar cell.
- FTO substrate first electrode
- SnCl 2 ⁇ 2H 2 O was dissolved in IPA at 70 mM, spin-coated at 3000 rpm for 30 seconds, and then heat treated at 150° C. for 30 minutes to control the thickness of the thin film.
- the perovskite precursor solution was spin-coated on the thin SnO 2 layer prepared in Preparation Example 1 at 1000 rpm for 10 seconds and at 5000 rpm for 50 seconds, and annealed at a temperature of 100° C. for 60 minutes to form a perovskite. A structural crystal layer was formed. At this time, during the second spin coating, 1 ml of diethyl ether was dropped onto the first spin-coated perovskite precursor solution.
- a chloroform solution containing 3 mmol of 4-dimethylaminopyridine (DMAP, pKa value in water (25° C.): 9.6) was applied on the perovskite structure crystal layer prepared above, which had been cooled after annealing, and was rotated at 5000 rpm. After spin coating for 30 seconds, it was annealed again at 100° C. for 5 minutes to form 4-dimethylaminopyridine crystals at the grain boundaries of the perovskite structure prepared above.
- DMAP 4-dimethylaminopyridine
- Bis(trifluoromethane)sulfonimide/acetonitrile (509 mg/ml) and 4-tert butylpyridine were added on the perovskite thin film layer where the Lewis base crystal was formed at the grain boundary of the prepared perovskite structure.
- a PTAA/chloroform (10.5 mg/ml) solution containing the PTAA/chloroform (10.5 mg/ml) solution was spin-coated at 3000 rpm for 30 seconds to form a hole transport layer.
- Au was vacuum-deposited on the top of the hole transport layer with a thermal evaporator of high vacuum (5x10 -6 torr or less) to form an Au electrode (second electrode) having a thickness of about 60 nm, and effective active The area (effective active area) was fixed at 0.096 cm2.
- a photograph of the crystals of the DMAP powder in FIG. 1 is shown in (a), and the image of the evaporated DMAP crystals after heating the DMAP powder at 100° C. for 30 minutes is shown in (b), and the peroves prepared in Example 1 When DMAP was used on the skyte thin film, the SEM image bound through the immobilization of the defect is shown in (c).
- Figure 2 shows the time SEM image of the perovskite thin film of Example 1
- Figure 3 shows the SEM image of the case of not annealing (annealing) and annealing (a) when applying 4-dimethylaminopyridine .
- the Lewis base when the Lewis base is treated without annealing after forming the perovskite structure crystal from FIG. 3 (pdmap w/o annealing, Comparative Example 1, (a)), the Lewis base is entirely at the grain boundary of the perovskite structure crystal. It can be seen that crystallization of the Lewis base occurs selectively at the grain boundary interface of the perovskite structure crystal when the Lewis base is treated (pdmap w annealing) after annealing after forming a perovskite structure crystal after irregular existence. there is.
- Figure 4 shows the XRD diffraction patterns of DMAP, the perovskite thin film and the perovskite thin film prepared in Example 1.
- DMAP is present on the perovskite thin film through GIWAX measurement of the perovskite thin film prepared in Example 1 in FIG. 10 .
- Example 5 All the processes were the same as in Example 1, but in the step of forming a Lewis base crystal at the grain boundary of the prepared perovskite structure, 5 mmol (Example 2), 10 mmol (Example 3), 15 mmol (Example 4), respectively and 20 mmol (Example 5) of 4-dimethylaminopyridine solution were spin-coated and annealed on the perovskite structure crystals respectively prepared to form 4-dimethylaminopyridine crystals at the grain boundaries of the perovskite structure.
- Example 5 shows SEM images of the perovskite thin films prepared in Example 1 (3 mmol), Example 2 (5 mmol), Example 3 (10 mmol), and Example 4 (15 mmol), It can be seen that a Lewis base crystal was formed at the grain boundary of the lobskite structure crystal.
- Figure 6 shows the X-ray diffraction pattern for each concentration of 4-dimethylaminopyridine of the perovskite thin film.
- FIG. 7 is a graph showing the change of TCSPC (Time-Correlated Single Photon Counting) using the perovskite thin film prepared in Examples 2 to 5 of the present invention. It can be seen from Figs. 5 and 6 that a perovskite thin film was formed, and from Fig. 7, as the treatment concentration of DMAP of the present invention increased, defects of the perovskite structure crystal were passivated and the lifespan was increased. there is.
- TCSPC Time-Correlated Single Photon Counting
- Example 1 except that the primary heat treatment was not carried out in the step of forming the perovskite structure crystal, in the same manner as in Example 1, except that the perovskite thin film and the same were used.
- a perovskite solar cell was prepared by carrying out an SEM photograph (pdmap w/o annealing) of the prepared perovskite thin film is shown in FIG. 3 .
- Example 1 To measure the current-voltage characteristics of the solar cells prepared in Example 1 and Comparative Example 1, an artificial solar device (ORIEL class A solar simulator, Newport, model 91195A) and a source-meter (Kethley, model 2420) ) was used.
- ORIEL class A solar simulator Newport, model 91195A
- source-meter Karl Fischer, model 2420
- the bonding force between the perovskite thin film and the hole transport layer formed on the perovskite thin film of the perovskite solar cell prepared in Example 1 was measured by the double cantilever beam (DCB) test method, and the results are shown in FIG. 8 shown in
- the adhesion between the perovskite thin film of the present invention and the hole transport layer is compared with the adhesion between the perovskite thin film and the hole transport layer of Comparative Example 1 (indicated by bare)
- the improvement is remarkable.
- the DMAP present at the grain boundary of the perovskite structure of the perovskite thin film of the present invention improves the adhesion, and the increase in the adhesion force allows the perovskite electronic device to have excellent durability.
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Abstract
La présente invention concerne un film mince de pérovskite comportant un joint de grain cristallin passivé, son procédé de préparation, et un film mince de pérovskite le comprenant, le film mince de pérovskite comprenant : une structure de pérovskite cristalline ; et une base de Lewis cristalline formée sur le joint de grain de la structure de pérovskite cristalline. Un dispositif électronique utilisant le film mince de pérovskite de la présente invention possède des propriétés étonnamment améliorées.
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KR1020210108514A KR20220022875A (ko) | 2020-08-19 | 2021-08-18 | 부동화된 결정입계를 갖는 페로브스카이트 박막, 이의 제조방법 및 이를 포함하는 전자소자 |
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