WO2022028403A1

WO2022028403A1 - Semiconductor structure with hybrid overlapping unit, and electronic device

Info

Publication number: WO2022028403A1
Application number: PCT/CN2021/110253
Authority: WO
Inventors: 庞慰; 蔡华林; 张孟伦
Original assignee: 诺思(天津)微系统有限责任公司
Priority date: 2020-08-06
Filing date: 2021-08-03
Publication date: 2022-02-10
Also published as: CN114070236A

Abstract

The present disclosure relates to a semiconductor structure, comprising: k filters, k being a natural number not less than 2, wherein each of the k filters comprises M_i bulk acoustic resonators, and each of the M_i bulk acoustic resonators comprises (M_i - 1)/n resonator overlapping units, with i being an integer from 1 to k, M_i being a natural number not less than 3, and n being one of the common divisors of a set of numbers formed by M_i - 1; an assembly comprises an antenna port and a plurality of other ports, and the k filters are all connected to the antenna port; in each of the resonator overlapping units, n resonators overlap one another; and the remaining resonator in each of the k filters is an independent resonator, and all the independent resonators overlap one another to form a hybrid overlapping unit, with at least one independent resonator being a resonator which is not adjacent to the other ports. The at least one independent resonator can be adjacent to the antenna port. The present disclosure further relates to an electronic device.

Description

Semiconductor structures and electronic devices with hybrid stacked cells

technical field

Embodiments of the present disclosure relate to the field of semiconductors, and in particular, to a semiconductor structure, and an electronic device having the semiconductor structure.

Background technique

With the rapid development of today's wireless communication technology, the application of miniaturized portable terminal equipment is also increasingly widespread, so the demand for high-performance, small-sized RF front-end modules and devices is also increasingly urgent. In recent years, filter devices such as filters and duplexers based on, for example, Film Bulk Acoustic Resonators (FBARs) have become more and more popular in the market. On the one hand, it is due to its excellent electrical properties such as low insertion loss, steep transition characteristics, high selectivity, high power capacity, and strong anti-electrostatic discharge (ESD) capability, and on the other hand, it is also due to its small size and easy integration. .

In reality, however, there is a need for further reductions in the size of the filter device. In addition, in the existing design, bulk acoustic wave resonators are combined in series and parallel to form filters, and multiple resonators need to be formed on one substrate. Each resonator is separated at different horizontal positions of the substrate and connected by horizontal metal leads, as shown in Figure 1. As shown, the top electrode 104 of the resonator 100 in the virtual frame is connected to the bottom electrode 102 of the resonator 200 through the conductive via 10. In order to ensure electrical signal transmission and manufacturing process limitations, the conductive via 10 is connected to the top of the resonator 100 The connection width of the electrode 104, the width of the conductive via 10, the width of the top electrode 104 of the resonator 100 and the width of the bottom electrode 102 of the resonator 200 all have certain requirements, generally the total length is >5 μm, which will lead to the introduction of relatively large connecting lines. Large electrical losses, especially for high-frequency resonators, can degrade insertion loss by more than 0.1dB when the electrode thickness is <1000A.

SUMMARY OF THE INVENTION

The present disclosure is made to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.

According to an aspect of an embodiment of the present disclosure, a semiconductor structure is proposed, comprising:

k filters, where k is a natural number not less than 2, the k filters respectively include M _i bulk acoustic resonators, and the M _i bulk acoustic resonators include (M _i -1)/n resonator stacking units , where i is an integer from 1 to k, M _i is a natural number not less than 3, and n is one of the common divisors of the number set formed by M _i -1, where:

the assembly includes an antenna port and a plurality of other ports, and k filters are connected to the antenna port;

In each resonator stack unit, n resonators are stacked on each other; and

The remaining one resonator in the k filters is an individual resonator, and all the individual resonators are stacked on each other to form a hybrid stacking unit, and at least one individual resonator is not adjacent to the other ports. resonator.

Embodiments of the present disclosure also relate to a semiconductor structure comprising:

k filters, where k is a natural number not less than 2, the k filters include a first filter and a second filter, the first filter includes M1 bulk acoustic resonators, and the second filter includes M2 bulk acoustic resonators , M1=3p+1, M2=3q+2, where p and q are natural numbers, where:

The 3p resonators in the first filter form p resonator stacking units, the 3q resonators in the second filter form q resonator stacking units, and each resonator stacking unit includes stacked 3 a resonator;

The assembly includes an antenna port and other ports, and both the first filter and the second filter are connected to the antenna port;

The remaining one resonator of the first filter and/or one of the remaining two resonators of the second filter is not adjacent to the other port, and the remaining one of the first filter The resonator and the remaining two resonators of the second filter are stacked on each other to form a hybrid stacked unit.

Embodiments of the present disclosure also relate to an electronic device including the above-described semiconductor structure.

Description of drawings

These and other features and advantages of the various embodiments disclosed in this disclosure may be better understood by the following description and accompanying drawings, wherein like reference numerals refer to like parts throughout, wherein:

1 is a schematic cross-sectional view of an electrical connection between two adjacent bulk acoustic wave resonators in an existing design;

2 is a schematic top view of a semiconductor structure according to an exemplary embodiment of the present disclosure;

3A is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line A-A' in FIG. 2 according to an exemplary embodiment of the present disclosure;

3B is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line B-B' in FIG. 2 according to an exemplary embodiment of the present disclosure;

3C is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line C-C' in FIG. 2 according to an exemplary embodiment of the present disclosure;

3D is a diagram illustrating a comparison of insertion loss curves of the structure of FIG. 3A with respect to the structure of FIG. 1;

3E-3G are schematic cross-sectional views of a bulk acoustic wave resonator taken along lines AA', BB', and CC' in FIG. 2, respectively, according to different exemplary embodiments of the present disclosure ;

4A is a schematic diagram of a filter comprising 5 bulk acoustic resonators;

4B is a schematic cross-sectional view exemplarily showing the arrangement of resonators in the filter in FIG. 4A , wherein a redundant structure is provided below one series resonator;

FIG. 5 is an exemplary topology diagram of a duplexer, wherein each filter has 3 BAW resonators in series and 2 BAW resonators in parallel;

FIG. 6 is another exemplary topology diagram illustrating the distribution of resonators on two dies in the duplexer of FIG. 5;

7A and 7B are cross-sectional views respectively showing the layout arrangement of the resonators on two dies after transfer and redistribution in FIG. 6 . In FIG. 7A , six resonators and one filter are provided on one die. The series resonator Se3-1 of the other filter and the series resonator Se3-2 of the other filter are stacked on each other, and in FIG. 7B, one die is provided with the remaining four resonators of the other filter;

8 is a schematic diagram illustrating an arrangement of resonators of the duplexer in FIGS. 7A and 7B according to an exemplary embodiment of the present disclosure;

FIG. 9 shows the frequency insertion loss curves of the stacked arrangement in FIG. 5 and the case of non-overlapping, wherein the solid line is the frequency insertion loss curve of the stacked arrangement in FIGS. 7A and 7B , and the dotted line is the frequency insertion loss curve of FIG. 5 The frequency insertion loss curve when there is no overlap in ;

Figures 10A and 10B show two exemplary topology diagrams of the distribution of resonators on two dies for the duplexer in Figure 5;

11A and 11B are cross-sectional views respectively showing the layout arrangement of the resonators on the two dies in FIG. 10A after transfer and redistribution. In FIG. 11A , six resonators are arranged on one die, and one filter The series resonator Se1-1 of the filter and the series resonator Se1-2 of the other filter are stacked on each other, and in FIG. 11B, one die is provided with the remaining four resonators of the other filter;

12 is a schematic diagram illustrating an arrangement of resonators of the duplexer in FIGS. 11A and 11B , according to an exemplary embodiment of the present disclosure;

FIG. 13 shows the frequency insertion loss curves of the duplexer in FIG. 5 in the stacked arrangement and the non-stacked arrangement, where the solid line is the frequency insertion loss curve of the stacked arrangement in FIGS. 11A and 11B , and The dotted line is the frequency insertion loss curve when there is no overlap in Fig. 5;

FIGS. 14 and 15 respectively illustrate topology diagrams of the distribution of resonators on two dies in the duplexer in FIG. 5 according to different exemplary embodiments of the present disclosure;

16 is a cross-sectional view exemplarily showing a specific structure of a resonator stacking unit according to an exemplary embodiment of the present disclosure, in which the upper and lower resonator effective areas are acoustically isolated by a cavity, the left side in FIG. 16 , The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other, and on the right side, the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other;

17A-17G are schematic structural diagrams exemplarily illustrating a manufacturing process of a resonator stack unit according to an exemplary embodiment of the present disclosure.

detailed description

The technical solutions of the present disclosure will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. The following description of the embodiments of the present disclosure with reference to the accompanying drawings is intended to explain the general disclosed concept of the present disclosure, and should not be construed as a limitation of the present disclosure.

Reference numerals in this disclosure are explained as follows:

11, 21: The electrodes of the top electrodes of the upper resonators are external leads.

12, 22: The electrodes of the bottom electrodes of the upper resonators are external leads.

13, 23: The electrodes of the top electrodes of the lower resonators are externally lead.

14, 24: The electrode of the bottom electrode of the lower resonator is an outer lead.

401: Electrode external lead. The above-mentioned electrodes are connected to the outer leads with the corresponding electrodes.

S: Substrate, optional materials are single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.

101, 201: Acoustic mirrors, the acoustic mirror 101 can be a cavity, or a Bragg reflection layer or other equivalent forms, and the acoustic mirror 201 is a cavity, which is also an acoustic decoupling layer.

102,202: The bottom electrode can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys, etc.

103,203: Piezoelectric layer, which can be a single crystal piezoelectric material, optional, such as: single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal Potassium niobate, single crystal quartz film, or single crystal lithium tantalate and other materials can also be polycrystalline piezoelectric materials (corresponding to single crystal, non-single crystal materials), optional, such as polycrystalline aluminum nitride, Zinc oxide, PZT, etc., can also be a rare earth element doped material containing a certain atomic ratio of the above materials, for example, can be doped aluminum nitride, and doped aluminum nitride contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu) and the like.

104, 204: The top electrode can be made of the same material as the bottom electrode, and the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys. The top and bottom electrode materials are generally the same, but can also be different.

105, 205: Passivation layer, generally a dielectric material, such as silicon dioxide, aluminum nitride, silicon nitride, etc.

106, 206: Disconnect structure.

2 is a schematic top view of a semiconductor structure according to an exemplary embodiment of the present disclosure, in FIG. 2 , the AA' line corresponds to the non-electrode connection ends of the top electrodes through the upper and lower resonators and the non-electrodes of the bottom electrodes The cross section of the connection end, the BB' line corresponds to the cross section through the electrode connection end of the bottom electrode of the lower resonator and the electrode connection end of the top electrode of the lower resonator, and the C-C' line corresponds to the cross section through the bottom electrode of the upper resonator. Section of the electrode connection and the electrode connection of the top electrode of the upper resonator.

3A is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line A-A' in FIG. 2 according to an exemplary embodiment of the present disclosure.

Although not shown, a process layer may also be disposed on the top electrode of the resonator, the process layer may cover the top electrode, and the role of the process layer may be a mass adjustment load or a passivation layer. The material of the passivation layer can be a dielectric material, such as silicon dioxide, aluminum nitride, silicon nitride, and the like.

In addition, in the structure shown in FIG. 3A , two resonators are formed at the same horizontal position of the substrate S, and the two resonators have different spatial positions in the vertical direction or in the thickness direction of the substrate.

Three or more resonators may also be stacked, as will be appreciated by those skilled in the art. For example, the semiconductor structure includes a first resonator, a second resonator and a third resonator stacked in the thickness direction, and a cavity 201 is formed between the top electrode 104 of the first resonator and the bottom electrode 202 of the second resonator There is an additional acoustic decoupling layer between the top electrode 204 of the second resonator and the bottom electrode of the third resonator, and the additional acoustic decoupling layer constitutes an acoustic mirror of the third resonator.

In the structure shown in FIG. 3A , two upper and lower resonators are shown, wherein the effective area of the upper resonator is the overlapping area of the top electrode 204 , the piezoelectric layer 203 , the bottom electrode 202 and the cavity 201 in the thickness direction. The lower resonator is the overlapping area of the cavity 201 , the top electrode 104 , the piezoelectric layer 103 , the bottom electrode 102 , and the acoustic mirror 101 in the thickness direction.

Correspondingly, in the case where the first resonator, the second resonator and the third resonator are stacked, the effective area of the uppermost third resonator is its top electrode, piezoelectric layer, bottom electrode and the other The overlapping area of the acoustic decoupling layer in the thickness direction, the effective area of the second resonator in the middle is the other acoustic decoupling layer, the top electrode 204, the piezoelectric layer 203, the bottom electrode 202 and the cavity 201 in the thickness direction The upper overlapping area, the effective area of the lowermost first resonator is the overlapping area of the cavity 201 , the top electrode 104 , the piezoelectric layer 103 , the bottom electrode 102 and the cavity 101 in the thickness direction.

In the structure shown in FIG. 3A, the upper resonator and the lower resonator are acoustically separated by the cavity 201, that is, the cavity 201 constitutes an acoustic decoupling layer between the upper and lower resonators, thereby avoiding the Acoustic coupling problems that can result from adjacent stacking of two resonators.

In the structure shown in FIG. 3A , since a plurality of resonators are formed at the same horizontal position of the substrate S, the spatial positions of the plurality of resonators in the vertical direction or in the thickness direction of the substrate are different, and therefore, filtering can be greatly reduced. The area of the resonator, for example, can be reduced from the area P1 shown in FIG. 1 to the area P2 shown in FIG. 3A in the case where two resonators are also provided.

As shown in FIG. 3A, the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator are electrically connected to each other at the non-electrode connection end. In the case where the bottom electrode of the upper resonator is directly connected to the top electrode of the lower resonator, the bottom electrode of the upper resonator is directly electrically connected to the top electrode of the lower resonator, and the length of the connection portion is shorter than that in FIG. 1, that is, The transmission path is shortened and the transmission loss is reduced; in addition, the transmission loss is further reduced when the thickness of the electrical signal output through the metal is the sum of the thickness of the top electrode of the lower resonator and the bottom electrode of the upper resonator. By reducing electrical losses, the insertion loss of the final filter is optimized. As shown in Fig. 3A, the length of the transmission path formed by the bottom electrode of the upper resonator and the top electrode of the lower resonator is d, which may be less than 5 m.

With the structures shown in FIGS. 3A-3C, the transmission loss is reduced because the current transmission path to the lower resonator is shortened, for example, can be less than 5 μm, the thickness of the top electrode 104 of the lower resonator and the thickness of the bottom electrode 202 of the upper resonator It can be thinned, which is conducive to further miniaturization of the resonator. In the case where the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, it is possible to reduce the circuit transmission path loss to the bottom electrode of the upper resonator and the current transmission path loss to the top electrode of the lower resonator. At the same time, the electrode film thicknesses of the bottom electrode of the upper resonator and the top electrode of the upper resonator can be further reduced simultaneously. Correspondingly, when the resonance frequency of the lower resonator is greater than 0.5 GHz, the thickness of the top electrode 104 is less than

and/or in the case where the resonant frequency of the upper resonator is greater than 0.5 GHz, the thickness of the bottom electrode 202 is less than

In further embodiments, when the resonant frequency of the lower resonator is greater than 3 GHz, the thickness of the top electrode 104 can be designed to be less than

And/or when the resonant frequency of the upper resonator is greater than 3 GHz, the thickness of the bottom electrode 202 of the upper resonator may also be less than

As can be understood, in the present disclosure, the thinning of the thickness of the electrode refers to the thinning of the thickness of the part of the electrode within the effective area of the resonator.

FIG. 3D is a graph illustrating a comparison of insertion loss curves of the structure of FIG. 3A with respect to the structure of FIG. 1 . FIG. 3D is a comparison of the insertion loss curve (solid line) using the structure of FIG. 3A of the present disclosure and the insertion loss curve (dotted line) of the traditional structure of FIG. 1 in the 3.5G frequency band. It can be seen that using FIG. 3A of the present disclosure After the structure, the insertion loss is increased by about 0.1dB due to the reduction of electrode loss.

3B is a schematic cross-sectional view of the bulk acoustic wave resonator taken along the line BB' in FIG. 2 according to an exemplary embodiment of the present disclosure, and FIG. 3C is a schematic cross-sectional view along the line BB' according to an exemplary embodiment of the present disclosure. A schematic cross-sectional view of the BAW resonator taken along the line CC' in FIG. 2 . It can be seen that, in FIGS. 3B and 3C , the top electrode of the lower resonator and the bottom electrode of the upper resonator are electrically connected in a circumferential direction around the entire cavity 201 .

For the case where the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, in the structures shown in FIGS. 3A-3C , the non-electrode connection ends of the bottom electrode of the upper resonator and the top electrode of the lower resonator and The electrode connecting ends are all connected to each other, ie, electrical connections are formed around the entire circumference of the cavity 201 . However, in addition to the connection manners shown in FIGS. 3A-3C, other connection manners are also possible. For example, the bottom electrode of the upper resonator and the top electrode of the lower resonator may be electrically connected to each other only at part of the non-electrode connection end; or, the bottom electrode of the upper resonator and the top electrode of the lower resonator may be electrically connected to each other only at the electrode connection end ; or the bottom electrode of the upper resonator and the top electrode of the lower resonator may be electrically connected to each other only at all or part of the non-electrode connection ends. These are all within the protection scope of the present disclosure.

The right side view of FIG. 16 , which will be mentioned later, shows a specific example in which the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other. As shown in the right cross-sectional view of FIG. 16 , the top electrode 104 covers the piezoelectric layer 103 , and the bottom electrode 202 is connected to the top electrode 104 at both the electrode connection end and the non-electrode connection end. In the right side view of FIG. 16 , the electrode connection end of the bottom electrode 202 covers the electrode connection end of the top electrode 104 , and the non-electrode connection end of the bottom electrode 202 covers the non-electrode connection end of the top electrode 104 .

When the ratio of the maximum width of the effective area of the resonator to the height of the cavity is large, it may happen that the upper and lower resonators are in contact in the cavity due to bending and other reasons. For example, the height of the cavity is

When the maximum width of the effective area of the resonator is greater than 100 μm, in order to ensure the complete formation of the cavity 201 in the effective area of the upper and lower resonators, the stress of the lower resonator can be controlled to bend in the direction of the lower air cavity, and/or the stress of the upper resonator can be controlled to make the cavity 201 bend. It is bent toward the upper air cavity, and the top electrode of the final formed lower resonator is concave downward, and/or the bottom electrode of the upper resonator is convex upward.

It was mentioned earlier that the stress can be controlled to reduce the chance of the upper and lower resonators coming into contact with each other, but when the resonator area is larger, although not shown, a support can be added, which can be in contact with the top or top electrode of the lower resonator, And the height of the support is less than or equal to the height of the cavity, which means that the top of the support is in contact with the bottom or bottom electrode of the upper resonator, and the height of the support is less than the height of the cavity means that the top of the support is not in contact with the upper resonator. When the local thickness of the cavity is reduced due to the bending of the resonator, the top end of the support member is in contact with the resonator to play a supporting role.

Using the cavity 201 as the acoustic decoupling layer can achieve complete acoustic decoupling of the upper and lower resonators, so the performance of the resonators is better. Further, the cavity 201 is directly surrounded by the top electrode 104 of the lower resonator and the bottom electrode 202 of the upper resonator (in other embodiments, the structure defining the position of the cavity also includes the upper resonator and/or the lower resonator. piezoelectric layer), such as the structures shown in FIGS. 3A-3C, 4B and 16, the overall structure is stable and reliable and the processing technology is simple.

As can be understood by those skilled in the art, the cavity 201 is disposed between the bottom electrode of the upper resonator and the top electrode of the lower resonator in the thickness direction of the resonator, not only including at least a part of the upper and lower boundaries of the cavity by The case where the lower surface of the bottom electrode of the upper resonator is defined by the upper surface of the top electrode of the lower resonator also includes a process layer (such as a passivation layer) provided on the upper surface of the top electrode of the lower resonator, so that the process layer defines The case of at least a portion of the lower boundary of the cavity 201 . These are all within the protection scope of the present disclosure.

In FIGS. 3A-3C, 4B, etc., the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, but the present disclosure is not limited thereto. In two BAW resonators stacked on top of each other, the bottom electrode of the upper resonator and the top electrode of the lower resonator may also be electrically isolated from each other, see, for example, the left side view of FIG. 16 .

3E is a schematic cross-sectional view of the BAW resonator taken along line AA' in FIG. 2 according to an exemplary embodiment of the present disclosure, in FIG. 3E, the bottom electrode 202 of the upper resonator is connected to the lower The top electrode 104 of the resonator is not electrically connected, and the ends of the non-electrode connection ends of the bottom electrode 202 of the upper resonator are located outside the top electrode 104 of the lower resonator and are all disposed on the upper surface of the piezoelectric layer 103 of the lower resonator .

3F is a schematic cross-sectional view of the BAW resonator taken along the line AA' in FIG. 2 , wherein the non-electrode connection end of the bottom electrode 202 of the upper resonator is in accordance with an exemplary embodiment of the present disclosure. It is not electrically connected to the non-electrode connection end of the top electrode 104 of the lower resonator, and the end of a part of the non-electrode connection end of the bottom electrode of the upper resonator is disposed on the upper surface of the piezoelectric layer 103 of the lower resonator (see FIG. 3F ). ) and the end of the other part is located laterally inside the boundary of the common cavity (see the right in FIG. 3F ).

3G is a schematic cross-sectional view of the BAW resonator taken along the line CC' in FIG. 2 , wherein the non-electrode connection end of the bottom electrode 202 of the upper resonator is in accordance with an exemplary embodiment of the present disclosure. The non-electrode connection end of the top electrode 104 of the lower resonator is not electrically connected, and the electrode connection end of the bottom electrode 202 of the upper resonator is not electrically connected to the electrode connection end of the top electrode 104 of the lower resonator. More specifically, for example, refer to the left sectional view of FIG. 16 . The top electrode 104 is in the first electrode layer, and in the left side view of FIG. 16 , the first electrode layer includes the top electrode 104 and the non-electrode connection end with the top electrode 104 is electrically isolated from the top electrode 104 by the disconnection structure 106. The non-top electrode layer on the outside of the non-electrode connection end (ie, the part to the left of the disconnected structure 106 in FIG. 16 ). In FIG. 16 , the bottom electrode 202 is in the second electrode layer. As shown in the left side view of FIG. 16 , the second electrode layer includes the bottom electrode 202 and the non-electrode connection end with the bottom electrode 202 that is electrically isolated from the bottom electrode 202 through the disconnection structure 206 . The non-bottom electrode layer on the outside of the non-electrode connection end of the bottom electrode 202 (ie, the right part of the disconnection structure 206 in FIG. 16 ). In the left side view of FIG. 16 , the electrode connection end of the bottom electrode 202 covers the non-top electrode layer, and the non-bottom electrode layer covers the electrode connection end of the top electrode 104 .

4A is a schematic diagram of a filter including five bulk acoustic resonators, showing three series resonators Se1-Se3, and two parallel resonators Sh1-Sh2, the series and parallel resonators having different resonance frequencies , thus forming a bandpass filter. 4B is a schematic cross-sectional view illustrating an arrangement of resonators in the filter of FIG. 4A, according to an exemplary embodiment of the present disclosure. The structure 3-2 in FIG. 4A is only an example, and the number of series resonators and parallel resonators is not limited. For a duplexer or multiplexer, as can be understood by those skilled in the art, multiple structures such as those of FIG. 4A are required in parallel, and the necessary passive components are required for matching.

In FIG. 4B, the series resonator Se2 is located above the parallel resonator Sh1, and the series resonator Se3 is located above the parallel resonator Sh2.

In order to improve the stability of the process, in FIG. 4B , the series resonator Se1 is placed above a non-functional but parallel resonator height material to ensure that the series resonator Se1 and other series resonators Se2 and Se3 are located on the same plane. The "non-functional but parallel resonator height material" here corresponds to redundant resonators. As shown in FIG. 4B, the left part is provided with a redundant resonator at the lower part of the series resonator Se1, and the redundant resonator also has a redundant top electrode, a redundant piezoelectric layer and a redundant bottom electrode, the redundant resonator also has a redundant top electrode, a redundant piezoelectric layer and a redundant bottom electrode. The redundant top electrode, redundant piezoelectric layer and redundant bottom electrode of the resonator layer are arranged in the same layer as the top electrode 104, the piezoelectric layer 103 and the bottom electrode 102, respectively. However, as a redundant resonator, it does not have the function of a resonator. For example, in the diagram shown in FIG. 4B , there is no acoustic mirror cavity below the redundant resonator. The redundant resonator can also be achieved without the function of a resonator by de-energizing the redundant top electrode or the redundant bottom electrode or by connecting the redundant top electrode and the redundant bottom electrode to each other.

In the resonator arrangement of the single filter shown in FIG. 4B , the characteristics of the stacked resonators are fully utilized, and the bottom electrode of the upper resonator is interconnected with the top electrode of the lower resonator.

In FIG. 4B, 401 is the electrode outer lead. For example, on the right side of FIG. 4B, the outer lead 401 is electrically connected to the top electrode of the upper resonator of the middle stacked unit and the top electrode of the lower resonator of the right stacked unit at the same time. connect. It should be pointed out that the arrangement of the electrode leads 401 is only exemplary, and other ways can also be used to realize the electrical connection of the electrodes of the resonator.

In FIG. 4B , for example, when two resonators are stacked, when the number of resonators is an odd number, a redundant structure (dummy) is additionally fabricated. The structure shown in FIG. 4B can reduce the area of five resonators originally occupied to the area of three resonators. The redundant structure actually ensures the manufacturability of the chip in the process. For example, when manufacturing the series resonator Se1, the surface on which the series resonator Se1 is located is flat, but it still wastes the space on the chip. Especially in the case of a duplexer or even a multiplexer, when each die has a redundant structure, more area or space is wasted.

FIG. 5 is an exemplary topology diagram of a duplexer, wherein each filter has 3 serial BAW resonators and 2 parallel BAW resonators. Likewise, the 3-2 structure is only a specific example, and is not intended to limit this patent. In addition, the present patent may also include the case of a multiplexer, and FIG. 5 only takes the duplexer as an example. When two or more filters are connected in parallel to form a duplexer or a multiplexer, the position of the redundant structure can be replaced by the resonator of other branches, therefore, the waste of space can be avoided.

In the embodiments described later with reference to FIGS. 5-17G, in order to eliminate the redundant structure, in the duplexer or multiplexer, when two or more die, the number of resonators is odd and each resonator When the stacked unit has an even number of resonators (it should be noted that the number of resonators can also be an even number and the number of resonators in each resonator stacked unit is an odd number), one of the Or multiple resonators are transferred to another die, so that the redundant structure can not be set up, that is, the original position of the redundant structure is filled by the resonator of another die, so that the space and area of the chip can be fully utilized, so that the The chip size can be further reduced when the resonators are stacked.

However, there are isolation requirements between different dies. When the resonator of one die is transferred to another die, a coupling path is generated between the two dies, which is not conducive to the isolation between the two dies. degrees, which can be seen from Figures 9 and 13 described later.

In the subsequent part of this specification, for the case where the resonator of one filter needs to be stacked with the resonator of another filter (ie, hybrid stacking), the scheme to make the isolation degree of the two filters less affected, That is, by selecting different resonators in the two filters for hybrid stacking, the adverse effect of the hybrid stacking on the isolation is reduced. For example, in embodiments of the present disclosure, the schemes in Figures 10A-12 are substituted for the schemes in Figures 6-8 to reduce the adverse effect of hybrid stacking on isolation.

In addition, as mentioned later, in the present disclosure, different resonator stacked units can also be placed on different substrates to further reduce the chip size.

FIG. 6 is an exemplary topology diagram illustrating the distribution of resonators on two dies in the duplexer of FIG. 5 . Figure 6 illustrates that the resonator used to eliminate a certain branch is transferred to another die to eliminate the redundant structure. In Figure 6, the resonators corresponding to the solid line and the dotted line are respectively shown on different dies, It can be seen that in Figure 6, the 5 resonators at the top of the figure and one resonator below the figure are on one die, and the other four resonators below the figure are on another die. The names of the individual resonators are the same as in Figure 5.

7A and 7B are cross-sectional views respectively showing the layout arrangement of the resonators on the two dies after transfer and redistribution in FIG. 6 . In FIG. 7A , six resonators are arranged on one die. In FIG. 7A , the series resonator Se3-1 of one filter and the series resonator Se3-2 of the other filter are superimposed on each other, belonging to a filter The resonator Se2-1 of the resonator is stacked with the resonator Sh1-1, and the resonator Se2-1 is stacked with the resonator Sh2-1. In FIG. 7B, one die is provided with the remaining four resonators of the other filter, that is, the resonator Se1-2 belonging to the other filter is overlapped with the resonator Sh1-2, and the resonator Se2-2 is stacked with the resonator Sh2-2.

FIG. 8 is a schematic diagram exemplarily showing the arrangement of the resonators of the duplexer in FIGS. 7A and 7B .

As can be seen from Figures 7A-8, after the resonators in Figure 5 are rearranged, the redundant structure required in Figure 4B is eliminated. Compared with the need to set a redundant structure in each filter, Figure 7A The -8 scheme further reduces the area of the duplexer shown in Figure 5 after eliminating the redundant structure.

In practical applications, it is hoped that the coupling paths between the two

ports

2 and 3 in FIG. 5 are as few as possible, that is, the higher the isolation, the better. However, based on the hybrid stacking arrangement of the two filters, the isolation between the two

ports

2 and 3 will be affected.

FIG. 9 shows the frequency insertion loss curves of the stacked arrangement in FIG. 5 and the case of non-overlapping, wherein the solid line is the frequency insertion loss curve of the stacked arrangement in FIGS. 7A and 7B , and the dotted line is the frequency insertion loss curve of FIG. 5 The frequency insertion loss curve when there is no overlap in . It can be seen that in FIG. 9 , the stacking scheme shown in FIGS. 7A and 7B suffers from poor isolation compared to the two filters not being stacked. As can be seen from Figure 9, the isolation is degraded, and the roll-off is degraded by about 10db at around 1.82GHz.

10A and 10B show two exemplary topological diagrams of the distribution of resonators on two dies in the duplexer of FIG. 5 . Fig. 10A and Fig. 10B illustrate that the resonator in one branch is transferred to another die to eliminate the redundant structure. In Figs. 10A and 10B, the resonators corresponding to the solid line and the dashed line are respectively shown in On different dies, it can be seen that in FIG. 10A , the five resonators at the top of the figure and one resonator at the bottom of the figure are on one die, and the other four resonators at the bottom of the figure are on another die. The names of the individual resonators are the same as in Figure 5.

11A and 11B are cross-sectional views respectively showing the layout arrangement of the resonators on the two dies after transfer and redistribution in FIG. 10A . In FIG. 11A , six resonators are arranged on one die. In FIG. 11A , the series resonator Se1-1 of one filter and the series resonator Se1-2 of the other filter are superimposed on each other, belonging to a filter The resonator Se2-1 of the resonator is stacked with the resonator Sh1-1, and the resonator Se3-1 is stacked with the resonator Sh2-1. In FIG. 11B, one die is provided with the remaining four resonators of the other filter, that is, the resonator Se2-2 belonging to the other filter is overlapped with the resonator Sh1-2, and the resonator Se3-2 is stacked with resonator Sh2-2.

12 is a schematic diagram illustrating an arrangement of resonators of the duplexer in FIGS. 11A and 11B , according to an exemplary embodiment of the present disclosure.

It can be seen from Figs. 11A-12 that after the resonators in Fig. 5 are rearranged, the redundant structure required in Fig. 4B is eliminated. The -12 scheme further reduces the area of the duplexer shown in Figure 5 after eliminating the redundant structure.

FIG. 13 shows the frequency insertion loss curves of the duplexer in FIG. 5 in the stacked arrangement and the non-stacked arrangement, where the solid line is the frequency insertion loss curve of the stacked arrangement in FIGS. 11A and 11B , and The dotted line is the frequency insertion loss curve when there is no overlap in FIG. 5 . It can be seen that, in Figure 13, the stacking scheme shown in Figures 11A and 11B suffers from poor isolation compared to the two filters not being stacked. As can be seen from Figure 13, the isolation is degraded, and the roll-off is degraded by about 5db at around 1.82GHz.

It can be seen that, compared with the solutions shown in FIGS. 7A and 7B , the solutions shown in FIGS. 11A and 11B have the advantageous effects of higher isolation and less roll-off deterioration.

As shown in Figures 10A-11B, the resonator used for hybrid stacking in the upper filter is Se1-1, and the resonator used for stacking in the lower filter is Se2-1, both of which are adjacent to antenna port 1, And stay away from

port

2 or 3.

Based on the above, in the hybrid stacking of the two filters, the stacking is preferably performed by using the resonators far from

ports

2 and 3, and the stacking using the resonators Se1-3 and Se2-3 is avoided as much as possible.

In the structures shown in Figures 10A-12, all resonators are placed on the same substrate or wafer, however, the present disclosure is not so limited. For example, by fabricating resonators on another package substrate of the filter (similar to the original idea of fabricating series and parallel on two substrates, but here the resonator units are stacked as the basic unit), part of the resonators can be Fabricated on one substrate, additional resonators are fabricated on another substrate for packaging to further reduce the area of the filter device.

14 and 15 respectively illustrate topology diagrams of the distribution of resonators on two dies in the duplexer in FIG. 5 according to different exemplary embodiments of the present disclosure. In Figs. 14 and 15, the thick and thin lines respectively indicate that the resonators are fabricated on different substrates, the resonators indicated by the thick lines are on one substrate, and the resonators indicated by the thin lines are on another substrate. In addition, in FIGS. 14 and 15 , the solid line and the dashed line represent the distribution of the resonators on different dies, that is, the resonator represented by the solid line is on one die, and the resonator represented by the dashed line is on one die. In an alternative embodiment, the stack of resonators in one stacked unit arranged on one substrate and/or the layer thickness in the stack is different from the resonance in one stacked unit arranged on another substrate the stack and/or the thickness of the layers in the stack. The laminated structure here includes a sandwich structure formed by a bottom electrode, a piezoelectric layer, and a top electrode forming a resonator, and also includes other layer structures arranged in the sandwich structure, such as a passivation layer or a process layer. Each laminated structure includes a plurality of layers, and the layers may be electrode layers, piezoelectric layers, passivation layers, and the like.

16 is a cross-sectional view exemplarily showing a specific structure of a resonator stacking unit according to an exemplary embodiment of the present disclosure, in which the upper and lower resonator effective areas are acoustically isolated by a cavity, the left side in FIG. 16 , The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other, and on the right side, the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other.

In FIG. 16, the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator can be directly electrically connected, as shown on the right side of FIG. 16; in addition, the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator Electrical isolation is also possible, as shown in the left side view of Figure 16. The electrode connection of the upper and lower resonators of the stacked resonator on the left in FIG. 16 and the electrode connection of the upper and lower resonators of the stacked resonator on the right in FIG. 16 have been described above, and will not be repeated here.

Compared with the embodiment shown in FIG. 4B , the embodiment shown in FIG. 16 has an additional layered resonator or resonator in which the bottom electrode of the upper resonator is electrically isolated from the top electrode of the lower resonator in the arrangement of the resonators. Stacked units. Moreover, when the resonant frequencies of the left filter and the right filter are different by about 300MHz, the thickness of each film layer of the left filter and the right filter may be different, that is, the left filter and the right filter have different thicknesses. , the upper and lower layers will have two layer thicknesses. For example, for the top electrode of the upper resonator in Figure 16, the thickness of the film in the filter on the left is larger than that in the filter on the right. thickness.

In the above embodiments, the filter includes an odd number of resonators, but the present disclosure is not limited thereto, and an even number of resonators may also be included. In the case where the filter includes an even number of resonators, if the resonator stacking unit is formed by stacking two resonators, there is no problem of needing to provide the aforementioned redundant resonators, however, based on the stacking of resonators Depending on the number of resonators in the unit, there may also be problems with having redundant resonators.

In the above embodiments, two resonators are included in the stacked resonator unit, but the present disclosure is not limited thereto, and there may be more resonators. For example, when the number of resonators in the stacked resonator unit is three, the number of resonators in each filter may be 3n+1, where n is the number of resonator stacked units included in the filter. the number of resonators in the three filters, the remaining three resonators in the three filters can also form a hybrid stacking unit; optionally, the number of resonators in some filters can be 3n+1, and the The number of resonators is 3n+2, and the remaining one resonator and two resonators in the two filters can form a hybrid stacking unit.

In the present disclosure, it should be pointed out that the semiconductor structure defined in the claims, for the filter, may only include the filter defined in the claims, or may not include the filter defined in the claims. , and additional filters are included.

In the above-mentioned embodiment, for the stacked resonator or the resonator stacked unit, there are two types, one is that the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, and the other is The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other. 17A-17G are schematic diagrams illustrating the fabrication process of the structure shown in FIG. 16, wherein the left part of each figure corresponds to the bottom electrode of the upper resonator and the top electrode of the lower resonator being electrically isolated from each other, and The right portion corresponds to the bottom electrode of the upper resonator and the top electrode of the lower resonator being electrically connected to each other.

Step 1: As shown in FIG. 17A, a lower resonator is fabricated by a conventional FBAR process. The lower resonator includes a recess corresponding to the acoustic mirror cavity 101, and a sacrificial material is arranged in the recess; the bottom electrode 102; the piezoelectric layer 103; the top electrode 104 ; Passivation layer 105 . As can be understood, the passivation layer 105 may not be provided. In addition, the acoustic mirror in FIG. 17A can also take other forms. Referring to FIG. 17A , the top electrode 104 covers the piezoelectric layer 103 .

Step 2: For the upper and lower resonators that are not electrically connected, the outer leads of the top electrode 104 of the lower resonator and the bottom electrode 202 of the upper resonator need to be disconnected. As shown in FIG. 17B , the disconnection structure 106 can be fabricated by photolithography and etching, and the disconnection structure corresponds to an opening or a through hole (as can be understood, the through hole is a strip-shaped through hole).

Step 3: As shown in FIG. 17C, deposit a sacrificial layer (such as PSG (phosphosilicate glass), amorphous silicon, BSG (borosilicate glass), BPSG (borophosphosilicate glass), USG ( Silica glass), etc.), for the subsequent film quality of the upper resonator, the surface of the deposited sacrificial material layer may be planarized by a CMP (chemical mechanical polishing) method. In FIG. 17C , the sacrificial material fills the break structure 106 as shown on the left side thereof.

Step 4: As shown in FIG. 17D , perform a patterning process of etching on the sacrificial material layer and the passivation layer of the lower resonator, exposing the outer leads of the top electrode of the lower resonator, so as to facilitate the connection with the bottom electrode of the upper resonator. The outer leads are electrically connected. The patterned layer of sacrificial material forms a sacrificial layer 301, which is eventually removed to form a cavity 201 that acoustically isolates the upper and lower resonators.

Step 5: As shown in FIG. 17E, on the structure shown in FIG. 17D, an electrode metal layer for forming the bottom electrode 202 of the upper resonator is deposited by sputtering or evaporation process. For the structure in which the upper and lower resonators on the left side of FIG. 17E are not electrically connected, the electrode metal layer corresponding to the bottom electrode 202 is patterned through photolithography and etching processes to form the structure shown in FIG. 17E , on the left side of FIG. 17E In the side view, the outer leads of the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator are disconnected due to the disconnection structure 206 . The break structures 206 correspond to openings or vias (as can be appreciated, the vias are strip vias). In Figure 17E, it can be seen that the top electrode 104 is part of the first electrode layer and the bottom electrode 202 is part of the second electrode layer, which covers the first electrode layer. At the non-electrode connection end of the top electrode 104, that is, as shown on the left side of the left image in FIG. 17E, the electrode connection end of the bottom electrode 202 covers the first electrode layer, and at the electrode connection end of the top electrode 104, The second electrode layer covers the electrode connection end of the top electrode 104 .

Step 6: As shown in FIG. 17F, on the structure shown in FIG. 17E, the deposition and patterning of the piezoelectric layer 203, the top electrode 204 and the passivation layer 205 of the upper resonator are completed.

Step 7: As shown in FIG. 17G , the fabrication of the external electrode leads is completed, and the sacrificial material layer is released to form the cavity 201 and the cavity 101 of the acoustic mirror.

It should be pointed out that, in the present disclosure, each numerical range, except that it is explicitly stated that it does not include the endpoint value, may be the endpoint value, but also the middle value of each numerical range, and these are all within the protection scope of the present disclosure. .

In the present disclosure, upper and lower are relative to the bottom surface of the base of the resonator, and for a component, the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.

In the present disclosure, inner and outer are relative to the center of the effective area of the resonator (ie, the center of the effective area) in the lateral direction or the radial direction, and one side or one end of a component close to the center of the effective area is the inner side or inner end, and the side or end of the part away from the center of the active area is the outer or outer end. For a reference position, being located inside the position means being between the position and the center of the active area in the lateral or radial direction, and being located outside of the position means being farther from the position in the lateral or radial direction than the position Effective regional center.

As can be appreciated by those skilled in the art, BAW resonators according to the present disclosure may be used to form filters or electronic devices. The electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.

Based on the above, the present disclosure proposes the following technical solutions:

1. A semiconductor structure comprising:

In each resonator stack unit, n resonators are stacked on each other; and

2. The semiconductor structure of 1, wherein:

The at least one individual resonator is adjacent to the antenna port.

3. The semiconductor structure according to 1, wherein:

All individual resonators are not adjacent to the other ports.

4. The semiconductor structure according to 3, wherein:

All individual resonators are adjacent to the antenna port.

5. The semiconductor structure of 1, wherein:

The semiconductor structure includes a duplexer, and k is 2.

6. The semiconductor structure of 1, wherein:

The semiconductor structure includes a multiplexer, and k is not less than 3.

7. A semiconductor structure comprising:

8. The semiconductor structure according to 7, wherein:

The remaining one resonator of the first filter or one of the remaining two resonators of the second filter is adjacent to the antenna port.

9. The semiconductor structure according to 7, wherein:

The remaining one resonator of the first filter and one of the remaining two resonators of the second filter are both adjacent to the antenna port.

10. The semiconductor structure of 9, wherein:

In the hybrid stack unit, two resonators adjacent to the antenna port are stacked adjacent to each other.

11. The semiconductor structure according to 7, wherein:

The remaining one resonator of the first filter and the remaining two resonators of the second filter are not adjacent to the other ports.

12. The semiconductor structure according to 1 or 7, wherein:

The stacked units of the k filters are all arranged on the same substrate; or

The stacked units of the k filters are arranged on at least two substrates.

13. The semiconductor structure of 12, wherein:

The stacked units of the k filters are arranged on at least two substrates, and in the stacked units arranged on the two substrates, the stacked structure of the resonators in one stacked unit arranged on one substrate and /or the layer thickness in the stack is different from the stack and/or the layer thickness in the stack of resonators in one stacked unit arranged on another substrate.

14. The semiconductor structure of any one of 1-13, wherein:

In each resonator stack unit, an acoustic decoupling layer is provided between the upper and lower resonators that are adjacent up and down, and between the bottom electrode of the upper resonator and the top electrode of the lower resonator. The coupling layer is a cavity and acts as an acoustic mirror of the upper resonator.

15. The semiconductor structure of 14, wherein:

The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other.

16. The semiconductor structure of 15, wherein:

The end of the non-electrode connection end of the top electrode of the lower resonator and the end of the non-electrode connection end of the bottom electrode of the upper resonator are in contact with each other; or

The electrode connection terminal of the top electrode of the lower resonator and the electrode connection terminal of the bottom electrode of the upper resonator are electrically connected to each other.

17. The semiconductor structure of 15, wherein:

The electrode connection end of the top electrode of the lower resonator and the electrode connection end of the bottom electrode of the upper resonator are electrically connected to each other, and the non-electrode connection end of the top electrode of the lower resonator and the non-electrode connection end of the bottom electrode of the upper resonator are mutually connected electrical connection.

18. The semiconductor structure of 14, wherein:

The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other.

19. The semiconductor structure of 18, wherein:

The end of at least a part of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is provided on the upper surface of the piezoelectric layer of the lower resonator, and the The end portion is located outside the non-electrode connection end of the top electrode of the lower resonator in the horizontal direction.

20. The semiconductor structure of 19, wherein:

The end of a part of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is provided on the upper surface of the piezoelectric layer of the lower resonator, the upper resonator The end of the other part of the non-electrode connection end of the bottom electrode in the circumferential direction is located inside the boundary of the acoustic decoupling layer in the horizontal direction.

21. The semiconductor structure of 20, wherein:

the resonator stacking unit includes a first electrode layer and a second electrode layer;

The first electrode layer comprises a top electrode of the lower resonator and a non-top electrode layer that is electrically isolated from the non-electrode connection end of the top electrode of the lower resonator and is located outside the non-electrode connection end of the top electrode of the lower resonator;

The second electrode layer includes a bottom electrode of the upper resonator and a non-bottom electrode layer that is electrically isolated from the non-electrode connection end of the bottom electrode of the upper resonator and located outside the non-electrode connection end of the bottom electrode of the upper resonator;

The electrode connection end of the bottom electrode of the upper resonator covers the non-top electrode layer, and the non-bottom electrode layer covers the electrode connection end of the top electrode of the lower resonator.

22. An electronic device comprising the semiconductor structure of any one of 1-21.

Although embodiments of the present disclosure have been shown and described, it will be understood by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the present disclosure, the scope of which is determined by It is defined by the appended claims and their equivalents.

Claims

A semiconductor structure comprising:

k filters, where k is a natural number not less than 2, the k filters respectively include M i bulk acoustic resonators, and the M i bulk acoustic resonators include (M i -1)/n resonator stacking units , where i is an integer from 1 to k, M i is a natural number not less than 3, and n is one of the common divisors of the number set formed by M i -1, where:

the assembly includes an antenna port and a plurality of other ports, and k filters are connected to the antenna port;

In each resonator stack unit, n resonators are stacked on each other; and

The remaining one resonator in the k filters is a separate resonator, and all the separate resonators are stacked on each other to form a hybrid stacking unit, and at least one separate resonator is not adjacent to the other ports. resonator.
The semiconductor structure of claim 1, wherein:

The at least one individual resonator is adjacent to the antenna port.
The semiconductor structure of claim 1, wherein:

All individual resonators are not adjacent to the other ports.
The semiconductor structure of claim 3, wherein:

All individual resonators are adjacent to the antenna port.
The semiconductor structure of claim 1, wherein:

The semiconductor structure includes a duplexer, and k is 2.
The semiconductor structure of claim 1, wherein:

The semiconductor structure includes a multiplexer, and k is not less than 3.
A semiconductor structure comprising:

k filters, where k is a natural number not less than 2, the k filters include a first filter and a second filter, the first filter includes M1 bulk acoustic resonators, and the second filter includes M2 bulk acoustic resonators , M1=3p+1, M2=3q+2, where p and q are natural numbers, where:

The 3p resonators in the first filter form p resonator stacking units, the 3q resonators in the second filter form q resonator stacking units, and each resonator stacking unit includes stacked 3 a resonator;

The assembly includes an antenna port and other ports, and both the first filter and the second filter are connected to the antenna port;

The remaining one resonator of the first filter and/or one of the remaining two resonators of the second filter is not adjacent to the other port, and the remaining one of the first filter The resonator and the remaining two resonators of the second filter are stacked on each other to form a hybrid stacked unit.
The semiconductor structure of claim 7, wherein:

The remaining one resonator of the first filter or one of the remaining two resonators of the second filter is adjacent to the antenna port.
The semiconductor structure of claim 7, wherein:

The remaining one resonator of the first filter and one of the remaining two resonators of the second filter are both adjacent to the antenna port.
The semiconductor structure of claim 9, wherein:

In the hybrid stack unit, two resonators adjacent to the antenna port are stacked adjacent to each other.
The semiconductor structure of claim 7, wherein:

The remaining one resonator of the first filter and the remaining two resonators of the second filter are not adjacent to the other ports.
The semiconductor structure of claim 1 or 7, wherein:

The stacked units of the k filters are all arranged on the same substrate; or

The stacked units of the k filters are arranged on at least two substrates.
The semiconductor structure of claim 12, wherein:

The stacked units of the k filters are arranged on at least two substrates, and in the stacked units arranged on the two substrates, the stacked structure of the resonators in one stacked unit arranged on one substrate and /or the layer thickness in the stack is different from the stack and/or the layer thickness in the stack of resonators in one stacked unit arranged on another substrate.
The semiconductor structure of any of claims 1-13, wherein:

In each resonator stack unit, an acoustic decoupling layer is provided between the upper and lower resonators that are adjacent up and down, and between the bottom electrode of the upper resonator and the top electrode of the lower resonator. The coupling layer is a cavity and acts as an acoustic mirror of the upper resonator.
The semiconductor structure of claim 14, wherein:

The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other.
The semiconductor structure of claim 15, wherein:

The end of the non-electrode connection end of the top electrode of the lower resonator and the end of the non-electrode connection end of the bottom electrode of the upper resonator are in contact with each other; or

The electrode connection terminal of the top electrode of the lower resonator and the electrode connection terminal of the bottom electrode of the upper resonator are electrically connected to each other.
The semiconductor structure of claim 15, wherein:

The electrode connection end of the top electrode of the lower resonator and the electrode connection end of the bottom electrode of the upper resonator are electrically connected to each other, and the non-electrode connection end of the top electrode of the lower resonator and the non-electrode connection end of the bottom electrode of the upper resonator are mutually connected electrical connection.
The semiconductor structure of claim 14, wherein:

The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other.
The semiconductor structure of claim 18, wherein:

The end of at least a part of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is provided on the upper surface of the piezoelectric layer of the lower resonator, and the The end portion is located outside the non-electrode connection end of the top electrode of the lower resonator in the horizontal direction.
The semiconductor structure of claim 19, wherein:

The end of a part of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is provided on the upper surface of the piezoelectric layer of the lower resonator, the upper resonator The end of the other part of the non-electrode connection end of the bottom electrode in the circumferential direction is located inside the boundary of the acoustic decoupling layer in the horizontal direction.
The semiconductor structure of claim 20, wherein:

the resonator stacking unit includes a first electrode layer and a second electrode layer;

The first electrode layer comprises a top electrode of the lower resonator and a non-top electrode layer that is electrically isolated from the non-electrode connection end of the top electrode of the lower resonator and is located outside the non-electrode connection end of the top electrode of the lower resonator;

The second electrode layer comprises a bottom electrode of the upper resonator and a non-bottom electrode layer that is electrically isolated from the non-electrode connection end of the bottom electrode of the upper resonator and is located outside the non-electrode connection end of the bottom electrode of the upper resonator;

The electrode connection end of the bottom electrode of the upper resonator covers the non-top electrode layer, and the non-bottom electrode layer covers the electrode connection end of the top electrode of the lower resonator.
An electronic device comprising a semiconductor structure according to any one of claims 1-21.