WO2022025415A1 - Dispositif de plate-forme intermédiaire pour le transfert de puces à del vers un afficheur, et essais de puces à del avant ce même transfert - Google Patents

Dispositif de plate-forme intermédiaire pour le transfert de puces à del vers un afficheur, et essais de puces à del avant ce même transfert Download PDF

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WO2022025415A1
WO2022025415A1 PCT/KR2021/007233 KR2021007233W WO2022025415A1 WO 2022025415 A1 WO2022025415 A1 WO 2022025415A1 KR 2021007233 W KR2021007233 W KR 2021007233W WO 2022025415 A1 WO2022025415 A1 WO 2022025415A1
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Prior art keywords
led chips
mpf
transfer
led
pad
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PCT/KR2021/007233
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English (en)
Korean (ko)
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민재식
이재엽
박재석
조병구
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(주)라이타이저
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/89—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Definitions

  • the present invention transfers each LED chip at the same or integer multiple pitch interval as the pitch interval of the display panel before transferring the micro-unit LED chip to the display panel, and after passing all electrical tests, 1:1 transfer to the display panel It relates to a method and apparatus for manufacturing a middle platform (MPF), which is an intermediate stage substrate for making it possible.
  • MPF middle platform
  • a light emitting diode is one of light emitting devices that emits light when an electric current is applied thereto. Light-emitting diodes can emit high-efficiency light with a low voltage, and thus have an excellent energy-saving effect.
  • the luminance problem of light emitting diodes has been greatly improved, and it has been applied to various devices such as a backlight unit of a liquid crystal display device, an electric sign board, a display device, and a home appliance.
  • ⁇ -LED micro light emitting diode
  • micro light emitting diodes are manufactured in plurality on a sapphire substrate, and then, by a mechanical transfer method, pick & place, micro light emitting diodes are placed on glass or flexible substrate one by one. are transcribed
  • micro light emitting diodes Since the micro light emitting diodes are picked up one by one and transferred, it is referred to as a 1:1 pick-and-place transfer method.
  • the size of the micro light emitting diode chip manufactured on the sapphire substrate is small and thin, during the pick and place transfer process of transferring the micro light emitting diode chips one by one, the chip is damaged, the transfer fails, or the chip alignment ( Alignment) fails, or a problem such as a tilt of the chip is generated.
  • Patent Document 1 Republic of Korea Patent 10-0853410
  • the present invention for solving the above problems is to perform an electrical test on a plurality of chips formed or arranged on a base substrate, and a plurality of LED chips arranged to be the same as the target pitch of the display panel are transferred and arranged to form one display panel. ;1
  • MPF Middle Platform
  • Another object of the present invention is to provide a method for rapidly manufacturing a large-area display device.
  • Transfer to the LED chip display panel according to an embodiment of the present invention for solving the above problems and a middle platform (MPF, Middle Platform) device for the LED chip test before the transfer is a substrate; an adhesive layer formed on the substrate; and LED chips transferred and disposed on the adhesive layer, wherein the LED chips are disposed at the same pixel pitch as the pixel pitch of the LED chips of the display panel to be transferred 1:1 to the display panel, and group measurement of the LED chips
  • the pad of each of the LED chips is expanded through metal deposition so that this is done.
  • the LED chips are very advantageous in terms of cost compared to the case of using a flip chip and a vertical chip base using a horizontal chip base.
  • the pad expansion process includes a process of passivation to cover the LED chips, a process of exposing the passivation by a patterned mask on pads formed on the LED chips, and a patterned shadow mask for the LED and depositing a metal on the pads of the chips to form an expanded pad.
  • the pad expansion process includes a process of passivation to cover the LED chips, a process of exposing the passivation by a mask patterned on the pads formed on the LED chips, and a lift-off process.
  • the method may further include a process of forming an expanded pad by depositing a metal on the pads of the chips.
  • the electrical contact of the pad is formed to be larger than the distance between the pair of probe pins, so that it is possible to significantly reduce the measurement defect rate and the measurement time.
  • the transfer process of the LED chips to the MPF includes a primary transfer transferred from a tape (LED Sheet) to a first carrier substrate, a secondary transfer transferred from the first carrier substrate to a second carrier substrate, and the second transfer process. 2 It may be achieved through a tertiary transfer process transferred from the carrier substrate to the MPF.
  • the primary transfer is all transfer for transferring all LED chips
  • the secondary transfer is selective transfer for selectively transferring some of the LED chips
  • the tertiary transfer is for sequentially transferring the RGB LED chips of the LED chips. It may be a sequential transcription in which the .
  • the second carrier substrate includes a substrate and a photosensitive transfer resin layer formed on the substrate, and a specific region of the photosensitive transfer resin layer is exposed by a mask and UV irradiation to form a photodegradation layer, and a predetermined heat It can be implemented by selectively separating and transferring the LED chip located in the photodegradation layer as the photodegradation layer is expanded by adding .
  • the LED chips disposed on the MPF are group-measured through a probe card, the LED chips disposed on the MPF are diced in pixel units, and the defective LED chip is the corresponding group measurement.
  • all of the LED chips in units of pixels may be transferred from the MPF to the display panel.
  • the MPF constitutes a unit MPF in which the LED chips are arranged in a matrix with a predetermined number, and the LED chips are transferred to the display panel in units of the unit MPF, and according to the quantity of the unit MPF, the display panel of the display panel. Large area is possible.
  • an electrical test is performed on a plurality of chips formed or disposed on the base substrate, and a plurality of LED chips disposed at the same target pitch of the display panel are transferred and arranged, 1:1 to the display panel.
  • An MPF Middle Platform
  • RGB chips are formed on each tape (LED sheet or wafer) according to an embodiment of the present invention.
  • 2 and 3 are diagrams for explaining in detail the step of transferring the LED chips to the first carrier substrate.
  • 4 to 8 are exemplary views for explaining a process of selectively transferring LED chip arrays from a first carrier substrate to a second carrier substrate according to an embodiment of the present invention.
  • FIG 9 is an exemplary view for explaining the concept of sequentially transferring from a second carrier substrate to a middle platform (MPF) according to an embodiment of the present invention.
  • 10 to 13 are diagrams for explaining in detail the process of expanding the area and pad expansion of the RGB chip transferred to the MPF according to an embodiment of the present invention.
  • FIG. 14 is an exemplary view for explaining the concept of performing group measurement of RGB chips on the MPF selectively and sequentially transcribed using a probe card according to an embodiment of the present invention.
  • FIG. 15 illustrates a process of dicing in RGB pixel units after group measurement is completed as in FIG. 14 according to an embodiment of the present invention.
  • FIG. 16 is a diagram illustrating a process of performing repair in units of pixels when a bad pixel is generated after group measurement is completed as in FIG. 14 according to an embodiment of the present invention.
  • 17 and 18 are diagrams for explaining 1:1 transfer from the MPF unit to the display panel by using the RGB pixel units that have been tested and diced as one unit group.
  • the upper (above) or lower (below) two components are in direct contact with each other or one or more other components disposed between two components.
  • each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description.
  • the size of each component does not fully reflect the actual size.
  • the chip, CSP, LED pixel CSP, and LED sub-pixel CSP used in the present invention may be defined as follows.
  • a chip is a concept including an LED chip, an RGB chip, an R chip, a G chip, a B chip, a mini LED chip, and a micro LED chip.
  • the chip will be described as an R chip, a G chip, or a B chip, but it should be noted that the chip is not limited to only the R chip, G chip, or B chip.
  • a chip scale package is a package that has recently received a lot of attention in the development of a single chip package, and refers to a single chip package having a semiconductor/package area ratio of 80% or more.
  • LED pixel CSP refers to a single package in which one LED pixel is CSP packaged by using Red LED, Green LED, and Blue LED as one pixel unit.
  • the LED sub-pixel CSP refers to a single package in which each of Red LED, Green LED, and Blue LED is used as one sub-pixel unit and CSP is packaged in one LED sub-pixel unit.
  • a light emitting body formed on a wafer may be defined as an LED chip.
  • FIG. 1 is a view showing RGB chips formed on each tape (LED Sheet, or wafer) according to an embodiment of the present invention.
  • the embodiment of the present invention describes three blue tapes each having RGB chips as an example, but is not limited thereto.
  • a plurality of light emitting devices 12R, 12G, and 12B emitting light of the same wavelength band are formed on each one tape 10R, 10G, and 10B.
  • the light emitting devices 12R, 12G, and 12B may be light emitting chips emitting red, green, and blue light.
  • the plurality of light emitting devices 12R, 12G, and 12B may be arranged at equal intervals along a plurality of rows and columns on each of the tapes 10R, 10G, and 10B.
  • the light emitting devices 12R, 12G, and 12B arranged at equal intervals are transferred to the display panel thereafter in the row or column direction, it is possible to reduce the manufacturing cost of the light emitting device by efficiently utilizing the entire area of a relatively expensive wafer.
  • each of the light emitting devices 12R, 12G, and 12B may correspond to a sub-pixel chip scale package (CSP) packaged in units of one LED chip or one sub-pixel.
  • CSP sub-pixel chip scale package
  • the wafer may be diced for each RGB sub-pixel to be separated for each RGB sub-pixel CSP.
  • the pitch W between the RGB pixels formed on each of the tapes 10R, 10G, and 10B is the same as the pitch between the pixels of the display panel or is set as a multiple of a proportional constant of a predetermined value.
  • micro LED is very small (1 ⁇ 100 ⁇ m level), and the unit cost of a tape or wafer to form a micro LED is relatively high, it is advantageous to integrate and form as many LEDs as possible on one unit tape or wafer, In this case, the pitch interval between the LEDs is very narrow, which may cause problems in transcription and testing, but the present invention proposes a new invention in consideration of these parts.
  • the LED chip of the present invention is based on a horizontal chip, it is possible to reduce the cost by about 10 times or more compared to when a vertical chip is used.
  • 2 and 3 are diagrams for explaining in detail the step of transferring the LED chip to the first carrier substrate.
  • the step of transferring the LED chip on the tape to the first carrier substrate may be referred to as 'primary transfer'.
  • a B-tape 10B formed for each blue LED chip 11B (LED sub-pixel CSP) may be prepared.
  • the LED chip is described as an example of a chip having a blue color, but the same principle may be applied to the remaining red and green color LED chips.
  • the first carrier substrate 100 is positioned on the upper surface of the tape 10B.
  • the first carrier substrate 100 may include a glass wafer 110 and a photosensitive transfer resin layer 120 .
  • the LED chips 11B are all transferred to the first carrier substrate 100 by the difference in adhesion of the first carrier substrate 100 to the upper surface of the tape 10B, and then the tape 10B. is removed
  • the first carrier substrate 100 may have a predetermined ductility, and the carrier substrate 100 having a predetermined ductility may be made of a material that can be easily bent by an external force.
  • the first carrier substrate 100 is a material that can be easily bent, transfer efficiency can be further improved compared to the case where the first carrier substrate 100 is made of a material that is not easily bent.
  • the first carrier substrate 100 may be made of a transparent material.
  • the first carrier substrate 100 is a transparent material, when each LED chip is transferred to the first carrier substrate 100, position adjustment and distortion are adjusted or controlled through an externally provided vision system (not shown).
  • the first carrier substrate 100 may also be referred to as a first transfer medium in the method of manufacturing a display device according to an embodiment of the present invention.
  • 4 to 8 are exemplary views for explaining a process of selectively transferring the LED chip array shown in FIG. 3 from a first carrier substrate to a second carrier substrate.
  • the second carrier substrate 130 is positioned on the first carrier substrate 100 on which the LED chips 11B are arranged at equal intervals.
  • the first carrier substrate 100 of the present invention uses the principle of expansion of the photosensitive resin.
  • the first carrier substrate 100 includes a glass wafer 110 and a photosensitive transfer resin layer 120 .
  • UV is irradiated to the photoresist (PR) of the photosensitive transfer resin layer 120
  • a photoreaction occurs in the internal novolak resin and photoactivator, etc.
  • the temperature is raised and the temperature is applied, only the UV-irradiated area expands, and the expansion occurs when the acid, which is a liquid trapped inside the PR, rapidly increases in volume due to heat.
  • the acid amount in the PR increases and the PR expansion power is increased, thereby blocking the cause of the transfer failure.
  • the degree of expansion of the photosensitive transfer resin by UV irradiation and heating when the content of the photoactive agent is relatively low and when the content of the photoactive agent is relatively high is compared.
  • the photoactive agent refers to a material in a generic sense that refers to any one of a photoacid generator (PAG), a photoactive compound (PAC), a photoinitiator, a photosensitive compound, or a photoactive compound.
  • PAG photoacid generator
  • PAC photoactive compound
  • photoinitiator a photosensitive compound
  • photoactive compound a photoactive compound
  • the photosensitive resin may be composed of a novolac resin, a solvent, and a photoactivator
  • the solvent may be PGMEA or Ethyle lactate
  • the photosensitive transfer resin may be defined as a resin obtained by adding a photoactivator solution to the photosensitive resin.
  • a case in which the photosensitive transfer resin is synthesized in an amount of 2 wt% or less of the photoactive agent is compared with the case in which the photoactive agent is synthesized in an amount of more than 6 wt%.
  • the photosensitive transfer resin of 2 wt% or less of the photoactive agent has weak expansion power, making it difficult to perform a complete function as a transfer. have expansive power.
  • a significant amount of a photoactivator solution is mixed with the photosensitive resin to form an exposed area by UV irradiation, and heat is applied to the exposed area to cause the photosensitive transfer resin in the exposed area to expand, so that the LED adhered to the exposed area It becomes possible to peel off the chip or transfer the LED chip onto another substrate, and the photosensitive transfer resin implements a material as a new use (for LED chip transfer) that only goes through the exposure process and does not go through the development process. it is possible to do
  • the slope value forms a steep slope when the PAC content is 4 to 6 wt%, and it can be seen that the expansion force of the maximum efficiency value according to the PAC content is within this range.
  • the expansion ratio of the photosensitive transfer resin has an expansion power of 1.8 to 5.6 times, and this expansion power zeroes the adhesive force of the adhered LED chip to be detached, that is, completely transferable. It can be seen that this is a physical value.
  • the glass substrate 110 may be made of any one of glass, quartz, synthetic quartz, and metal, and the material is not particularly limited.
  • the second carrier substrate 120 may be formed of any one of glass, quartz, synthetic quartz, and metal.
  • the photosensitive transfer resin layer 120 is formed, and the second carrier substrate 130 is disposed on the first carrier substrate 100 on which the LED chip 11B is disposed on the photosensitive transfer resin layer 120 . place the
  • a mask 140 on which a pattern is to be formed is disposed on the rear side of the first carrier substrate 100 , and UV is irradiated through the mask 140 .
  • the mask 140 and the photosensitive transfer resin area exposed by UV irradiation are exposed to light as shown.
  • the photosensitive transfer resin has an exposed region and an unexposed region, which means that the photosensitive transfer resin is a positive resin, and vice versa.
  • the exposure area in the photosensitive transfer resin layer 120 expands and the volume expands, and the volume expands.
  • the expansion region 120a makes the adhesive force of the LED chip 11Bx zero.
  • the LED chip 11Bx attached to the corresponding position is thus peeled off, and if there is a target substrate (second carrier substrate 130 ) on the opposite side, it may be transferred to the target substrate, and another The LED chip 11By adhered to the position (a position other than the expansion region) is placed on the substrate as it is, and it is possible to selectively peel or transfer the LED chip as necessary.
  • the photosensitive transfer resin has a fundamental concept different from the photosensitive resin in the semiconductor process such as pattern formation in that there is only an exposure process by UV and an expansion process by heat and no development process is performed.
  • the MPF 170 may include a glass substrate 150 and an adhesive layer 160 .
  • the MPF 170 of the present invention has a function as a preliminary panel in which the LED chips to be transferred to the display panel are arranged, and a substrate as an electrical test panel, replacement equipment for LEDs having an error in measurement results, and micro-unit LEDs A function as a substrate for extension of the pad is added.
  • the MPF 170 enables group measurement of the LED chip in micro units through a process of extending the distance between the pads of the LED chip while being transferred and disposed at the same pitch as the pixel pitch of the display panel. It can be utilized as a preliminary panel for transferring the LED chip from the MPF to the display panel in a state where the pixel is replaced and 1:1 transfer is possible to the display panel.
  • MPF Middle Platform
  • a plurality of chips formed or disposed on a base substrate are electrically tested, and a plurality of LED chips disposed at the same target pitch of the display panel are transferred and arranged, : Enables warriors.
  • the electrode pad can be expanded through pixel unit transfer of the LED chip and area expansion within the CSP area, which facilitates the measurement of the probe card, and also enables replacement of the defective chip after testing.
  • RGB values 11R, 11G, and 11B are selectively transferred to the second carrier substrate 130R, 130G, and 130B through FIGS. 1 to 8, respectively, these selectively transferred RGB chips ( 11Rx, 11Gx, and 11Bx) are respectively transferred back to the MPF 170 in the order of the RGB chip (1st ⁇ 2nd ⁇ 3rd).
  • the LED chips 11Rx, 11Gx, and 11Bx sequentially transferred from the second carrier substrate 130R, 130G, and 103B to the MPF 170 form one LED pixel 20, RGB pixel CSP, and are arranged horizontally and vertically.
  • An LED pixel 20 of may be disposed on the MPF 170 .
  • each of the RGB chips 11R, 11G, and 11B may be preset to be equal to the LED chip pitch interval of the display panel.
  • the pitch between RGB pixels is also made equal to the pixel pitch of the display panel through selective transfer and sequential transfer, so that 1:1 transfer is possible from the MPF to the display panel after pad extension and test completion.
  • 10 to 13 are diagrams for explaining in detail the process of region expansion and pad expansion of RGB chips transferred to the MPF.
  • the area expansion is a pre-process for enabling the expansion of the area (or volume) of each pad (electrode) formed on the LED chip within the CSP (Chip Scale Package), and has the meaning of securing a space for the expansion of the pad. .
  • pad expansion means expanding the pad of an existing LED chip by depositing metal in the left, right, up and down, or left and right up and down directions.
  • FIG. 10 shows RGB LED chips 11Rx, 11Gx, and 11Bx selectively and sequentially transferred onto the MPF 170, (B) is a plan view, (A) is XY of (B) shows a cross-sectional view of
  • a passivation (or passivation) is formed (or coated) on the MPF 170 to cover the RGB chips 11Rx, 11Gx, and 11Bx.
  • the passivation 180 is an epoxy-based material, and may be SU-8.
  • the passivation 180 is patterned through a photo process and a develop process.
  • the patterned passivation 180 surrounds one LED chip and is coupled to one LED chip to form one sub-pixel CSP.
  • Each RGB sub-pixel CSP (RGB chip) has a larger volume than the conventional RGB sub-pixel CSP, and as a result, each R sub-pixel CSP (11Rx), G sub-pixel CSP (11Gx), B sub-pixel CSP (11Bx) ) is expanded.
  • the photoresist layer 180 patterned on the RGB chip is combined, and the surface area of the RGB sub-pixel CSP is increased to be greater than that of the initial LED chip, thereby securing a pad extension area.
  • the size of the micro LED is several micro units, the size of the pad is inevitably small accordingly.
  • an area in which the size of the pad can be increased can be secured.
  • one sub-pixel CSP Chip Scale Package
  • Chip Scale Package is a generic term for a small package close to the size of a chip, and a package having a size close to that of a bare chip in which a lead frame protecting the chip appearance and a wire for electrical connection do not exist.
  • R sub-pixel CSP (11Rx), G sub-pixel CSP (11Gx), B sub-pixel CSP (11Bx) form one RGB pixel CSP (20), but with area expansion and pad expansion, RGB pixel CSP ( 20), the extended RGB pixel CSP 20E may be formed.
  • a patterned shadow mask (not shown) is disposed on the area-extended RGB chips 11Rx, 11Gx, and 11Bx.
  • a metal M for pad extension is deposited to a predetermined thickness on the shadow mask and the area-extended RGB chips 11Rx, 11Gx, and 11Bx.
  • the shadow mask is removed.
  • an extension pad 14E made of a pad extension metal may be formed on the pad 14 of the RGB chips 11Rx, 11Gx, and 11Bx of which the region is extended.
  • the pad 14 and the expansion pad 14E are in contact and are electrically connected.
  • the extended pad 14E with an extended area may be formed on each of the RGB chips 11Rx, 11Gx, and 11Bx, so that the extended RGB pixel CSP 20E may be formed.
  • the pad expansion process includes a process of passivation to cover the LED chips, a process of exposing passivation on pads formed on the LED chips with a patterned mask, and a lift-off process of the LED chips. It may be implemented as a process of forming an extended pad by depositing a metal on the pad.
  • the probe card 190 may test electrical and optical characteristics of the RGB chips 11Rx, 11Gx, and 11Bx transferred to the MPF 170 .
  • the probe card according to the embodiment of the present invention may include a base substrate (not shown) and probe pins 190a and 190b electrically connected to the base substrate.
  • the size (width*length) of the base substrate may correspond to the size (width*length) of the MPF 170 .
  • the base substrate and the MPF 170 may have the same size.
  • the present invention is not limited thereto, and the size or shape of the base substrate may be different from the size or shape of the MPF 170R according to design needs.
  • the pair of probe pins 190a and 190b connected to the base substrate may correspond to one RGB chip 11Rx, 11Gx, and 11Bx disposed in the MPF 170 in one-to-one correspondence.
  • the pad of the R chip 11Rx may be positioned toward the probe card, and the light emitting surface of the R chip 11Rx may be positioned toward the MPF 170 .
  • the test signal When the test signal is applied, the light does not go out toward the probe card covered by the pad, but is emitted toward the MPF 170 .
  • the optical characteristic detector (integrating sphere, 200) located below the MPF 170 may detect the emitted light.
  • the first probe pin 190a and the second probe pin 190b are used to test the electrical and optical characteristics of each R chip 11Rx. Taking the electrical and optical characteristic test as an example, the first probe pin 190a is in contact with one pad 14E of the R chip 11Rx, and the second probe pin 190b is the R chip 11Rx. It is brought into contact with the other pad 14E'.
  • one pad 14E and another pad 14E' are expansion pads.
  • the R chip 11Rx and the first and second probe pins 190a and 190b may be electrically connected.
  • a test signal is transmitted to the R chip 11Rx through the first and second probe pins 190a and 190b to test whether light is emitted from the R chip 11Rx (electrical characteristic test), or Even when light is emitted, it is possible to test whether there is any functional error such as whether light of a normal wavelength band is emitted or light of an appropriate intensity is emitted (optical property test).
  • the probe card according to the embodiment of the present invention does not test the electrical and optical characteristics of chips formed on each tape (or wafer) 10R, 10G, 10B, but a pad-extended sub-pixel CSP on the MPF 170 . It is characterized in that it tests the electrical and optical properties of When the chips formed on each of the tapes 10R, 10G, and 10B are mini or microchips, the pitch between the chips formed on the tape (or wafer) is very narrow, and the general pad of each chip is inevitably also very small. Therefore, in order to test the electrical and optical characteristics of the chip formed on each wafer, the probe card is inevitably smaller according to the size of the chip. When the size of the probe card is reduced, the size of the probe pin must also be reduced. It is not easy to manufacture a probe card with a reduced size of the probe pin, and the reliability of the test result is also reduced.
  • the sub-pixel CSP when the electrical and optical properties of the pad-extended sub-pixel CSP are tested during the transfer process, the sub-pixel CSP has an area larger than that of the chip on the wafer, and the surface area of the pad is also Since it is in a wide state, it is possible to have sufficient space to measure with the probe card. Accordingly, there is no need to miniaturize the probe card according to the size of the chip, reliability of test results can be improved, and test time can be significantly reduced.
  • expansion pads 14E and 14E' are disposed on the pad of the sub-pixel CSP and have a larger surface area than the pad before expansion, and the distance P1 between the first and second probe pins 190a and 190b is extended.
  • the pads 14E and 14E' are extended by the widened intervals.
  • the inter-pad distance P2 is smaller than P1
  • the interval between the probe pins 190a and 190b must also be reduced.
  • reliability cannot be secured due to errors such as short circuits during measurement, the test itself is difficult, and it is difficult to measure a large number of groups.
  • the present invention addresses this problem through a direct expansion pad within the MPF 170 .
  • the test measurement result may reflect the electrical characteristic test result and the optical characteristic test result. Even if it passes the electrical characteristic test result, if it does not pass the optical characteristic test result, it may be determined as an error. The opposite is also true.
  • a method of repairing the sub-pixel CSPs may use a pickup and place method in which an error sub-pixel CSP is removed among the sub-pixel CSPs, and a new sub-pixel CSP is replaced in its place.
  • FIG. 15 illustrates a process of dicing in RGB pixel units after group measurement is completed as in FIG. 14 according to an embodiment of the present invention.
  • the LED chips transferred and disposed on the MPF 170 are electrically and optically measured in a group measurement method through a probe card, after confirming that all LED chips are operating normally (or after a replacement process)
  • Each of the RGB pixels CSP may be diced in units of pixels.
  • FIG. 16 is a diagram illustrating a process of performing repair in units of pixels when a bad pixel is generated after group measurement is completed as in FIG. 14 according to an embodiment of the present invention.
  • 17 and 18 are diagrams for explaining 1:1 transfer from the MPF unit to the display panel by using the RGB pixel units that have been tested and diced as one unit group.
  • each of the diced RGB pixel CSPs may be 1:1 transferred to the display panel using a plurality of predetermined arrays as one unit MPF 210 .
  • the LED chip can be transferred to a larger display panel by using a plurality of units MPF 210 as a plurality of groups. 1 can be transferred, and a large-area display device can be configured at the same time as the transfer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un dispositif et un procédé de fabrication d'une plate-forme intermédiaire, qui est un substrat pour une étape intermédiaire dans laquelle, avant de transférer des puces à DEL de taille micrométrique vers un afficheur, les puces à DEL respectives sont transférées à la même distance de pas que le panneau d'affichage ou à une distance de pas d'un nombre entier multiple de celles-ci, puis après achèvement de tous les tests électriques, sont transférées 1:1 vers le panneau d'affichage. Selon un mode de réalisation de la présente invention, un dispositif de plate-forme intermédiaire (MPF) pour le transfert de puces à DEL vers un panneau d'affichage et des tests de puce à DEL avant le transfert, comprend : un substrat ; une couche adhésive formée sur le substrat ; et des puces à DEL transférées et disposées sur la couche adhésive, les puces à DEL étant disposées à un pas de pixel identique à celui des puces à DEL sur le panneau d'affichage de manière à être transférées 1:1 vers le panneau d'affichage, et des pastilles des puces à DEL respectives sont étendues par pastille par l'intermédiaire d'un dépôt de métal de telle sorte qu'une mesure de groupe des puces à DEL peut être effectuée.
PCT/KR2021/007233 2020-07-31 2021-06-09 Dispositif de plate-forme intermédiaire pour le transfert de puces à del vers un afficheur, et essais de puces à del avant ce même transfert WO2022025415A1 (fr)

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KR1020200095696A KR102222355B1 (ko) 2020-07-31 2020-07-31 Led칩 디스플레이 패널로의 전사 및 그 전사 전의 led칩 테스트를 위한 미들 플랫폼 장치

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KR102222355B1 (ko) * 2020-07-31 2021-03-03 (주)라이타이저 Led칩 디스플레이 패널로의 전사 및 그 전사 전의 led칩 테스트를 위한 미들 플랫폼 장치
JP2022135730A (ja) * 2021-03-05 2022-09-15 株式会社ブイ・テクノロジー 転写装置及び転写方法
CN116897289A (zh) * 2021-08-31 2023-10-17 信越工程株式会社 通电检查装置及通电检查方法
WO2024005597A1 (fr) * 2022-06-30 2024-01-04 엘씨스퀘어(주) Procédé de transfert de microéléments électroluminescents
KR102566048B1 (ko) * 2022-09-19 2023-08-14 웨이브로드 주식회사 반도체 발광 소자용 에피택시 다이, 이를 포함하는 반도체 발광 소자 및 그 제조 방법

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