WO2022016735A1 - Mems 声传感器 - Google Patents

Mems 声传感器 Download PDF

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Publication number
WO2022016735A1
WO2022016735A1 PCT/CN2020/125733 CN2020125733W WO2022016735A1 WO 2022016735 A1 WO2022016735 A1 WO 2022016735A1 CN 2020125733 W CN2020125733 W CN 2020125733W WO 2022016735 A1 WO2022016735 A1 WO 2022016735A1
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WO
WIPO (PCT)
Prior art keywords
fixed
acoustic sensor
movable cantilever
mems acoustic
movable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/125733
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English (en)
French (fr)
Inventor
雅尼克•凯夫兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AAC Technologies Holdings Shenzhen Co Ltd
Original Assignee
AAC Acoustic Technologies Shenzhen Co Ltd
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Filing date
Publication date
Application filed by AAC Acoustic Technologies Shenzhen Co Ltd filed Critical AAC Acoustic Technologies Shenzhen Co Ltd
Publication of WO2022016735A1 publication Critical patent/WO2022016735A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • H02N1/008—Laterally driven motors, e.g. of the comb-drive type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/08—Mouthpieces; Microphones; Attachments therefor
    • H04R1/083—Special constructions of mouthpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/033—Comb drives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0136—Comb structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/05—Type of movement
    • B81B2203/058—Rotation out of a plane parallel to the substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to a microphone, in particular to a MEMS acoustic sensor.
  • the related art discloses a system and method for comb driving a MEMS device.
  • the comb-driven MEMS device has a cantilever and a stator, and the cantilever can vibrate up and down driven by acoustic pressure waves.
  • the cantilever includes rotor combs connecting its edges and the stator includes stationary combs.
  • such a MEMS device formed by a cantilever and a stator has low sensitivity.
  • the purpose of the present invention is to provide a MEMS acoustic sensor to solve the problem of low sensitivity of the MEMS acoustic sensor in the related art.
  • the present invention provides a MEMS acoustic sensor, including: a MEMS acoustic sensor, which includes a substrate with a back cavity, a stator and a vibrating movable cantilever, the stator has a back cavity suspended The center part and at least two fixed arms extending from the center part to the base and fixed on the base, the movable cantilever is located between two adjacent fixed arms, and the movable cantilever is fixed at on the base, and the movable cantilever is at least partially facing the back cavity, the movable cantilever has a fixed end fixed to the base and a free edge opposite to the fixed arm and spaced apart, the free edge A plurality of moving comb teeth are formed on the stator, the stator has a plurality of fixed comb teeth formed on the fixed arm, and the moving comb teeth and the fixed comb teeth cooperate with each other to form a capacitor having an overlapping area.
  • a MEMS acoustic sensor which includes a substrate with a back cavity,
  • the MEMS acoustic sensor further comprises four movable cantilevers, and the stator has four fixed arms.
  • the MEMS acoustic sensor further comprises a pad, the pad is fixed on the base, and the fixed end is fixed on a side of the pad away from the base.
  • the height of the movable cantilever in the vibration direction is equal to the height of the fixed arm in the vibration direction.
  • the height of the free edge of the movable cantilever in the vibration direction of the movable cantilever is smaller than the height of the stator in the vibration direction, and the movable cantilever further includes an extension from the free edge along the vibration direction of the movable cantilever.
  • the protrusion; the height of the protrusion is equal to the height of the fixed arm.
  • the fixation arm has a top layer and a bottom layer, the top layer and the bottom layer being spaced and electrically isolated from each other.
  • the stator further includes an insulating layer formed between the top layer and the bottom layer.
  • an air gap is formed between the top layer and the bottom layer.
  • the MEMS acoustic sensor further includes a back plate mounted on the substrate, the back plate and the movable cantilever are spaced apart along the vibration direction of the movable cantilever, and the back plate and the movable cantilever are spaced apart from each other. Capacitive coupling between them; the backplane also includes a plurality of through holes penetrating through it.
  • the central part of the stator is suspended at the central position of the back cavity, the stator and the movable cantilever together form an axisymmetric figure, the movable comb teeth and the fixed comb teeth are both rectangular comb teeth and The capacitors are formed by mutually corresponding spaced arrangement.
  • the MEMS acoustic sensor of the present invention is provided with a movable cantilever between two adjacent fixed arms, a plurality of movable comb teeth are arranged on the free edge of the movable cantilever, and a plurality of fixed combs are arranged on the fixed arm.
  • the teeth, moving comb teeth and stationary comb teeth cooperate with each other to form capacitors with overlapping regions. This configuration of the MEMS acoustic sensor can improve its sensitivity.
  • 1 to 3 are top views of the first embodiment of the MEMS acoustic sensor of the present invention.
  • FIG. 4 is a cross-sectional view of the MEMS acoustic sensor shown in FIG. 1 along the direction A-A.
  • FIG. 5 is a cross-sectional view of the MEMS acoustic sensor shown in FIG. 1 along the B-B direction.
  • FIG. 6 is a schematic structural diagram of a certain state of the MEMS acoustic sensor shown in FIG. 1 under the action of sound waves.
  • FIG. 7 is a cross-sectional view of the second embodiment of the MEMS acoustic sensor of the present invention.
  • FIGS. 8 to 11 are cross-sectional views of the third embodiment of the MEMS acoustic sensor of the present invention.
  • FIG. 16 is a top view of the sixth embodiment of the MEMS acoustic sensor of the present invention.
  • FIG. 17 is a top view of the seventh embodiment of the MEMS acoustic sensor of the present invention.
  • the MEMS acoustic sensor 100 includes a substrate 11 having a back cavity 110 , a stator 13 , and a movable cantilever 121 fixed on the substrate 11 and at least partially facing the back cavity 110 .
  • the stator 13 has a central portion 130 suspended in the back cavity 110 and at least two fixing arms 132 extending from the central portion 130 to the base 11 and fixed on the base 11 .
  • the movable cantilever 121 is located between two adjacent fixed arms 132 and is spaced apart from the fixed arms 132 .
  • the movable cantilever 121 has a fixed end 1210 fixed to the base 11 and a free edge 1211 opposite to and spaced from the fixed arm 132 .
  • the L direction is the vibration direction of the movable cantilever 121 .
  • the surface of the fixed arm 132 along the L-direction is spaced apart from the surface of the free edge 1211 along the l-direction and together form a capacitor having the overlapping region 10 .
  • the stator 13 has a plurality of fixed comb teeth 131 formed on the fixed arm 132 , and the free edge 1211 is also formed with a plurality of movable comb teeth 1213 .
  • the fixed comb teeth 131 and the movable comb teeth 1213 are in the shape of rectangular comb teeth and are arranged at intervals corresponding to each other to form capacitors. As shown in FIG.
  • the height of the movable cantilever 121 in the vibration direction L is equal to the height of the fixed arm 132 in the vibration direction L. It can be understood that, in other embodiments, the height of the movable cantilever 121 in the vibration direction L may not be equal to the height of the fixed arm 132 in the vibration direction L.
  • the stator 13 has four fixed arms 132 , the central portion 130 of the stator 13 is suspended at the central position of the back cavity 110 , and the MEMS acoustic sensor 100 has four movable cantilevers 121 .
  • the four fixed arms 132 extend from the central portion 130 to the four sides of the base 11 respectively, and are in a symmetrical cross shape.
  • the four movable cantilevers 121 are located between two adjacent fixed arms 132 and are triangular in shape.
  • the stator 13 Together with the movable cantilever 121 , an axis-symmetric square is formed. As shown in FIG.
  • the four fixed arms 132 extend from the central portion 130 to the four corners of the base 11 respectively, and are in a symmetrical cross shape.
  • the movable cantilever 121 is located between two adjacent fixed arms 132 and is in a triangle shape.
  • the cantilever arms 121 collectively form an axisymmetric octagon.
  • the four fixed arms 132 extend from the central portion 130 to the four sides of the base 11 respectively, and the movable cantilever 121 is rectangular.
  • the stator 13 and the movable cantilever 121 together form an axisymmetric square.
  • the movable cantilever 121 can be directly formed by patterning a silicon base.
  • the fixed end 1210 can be anchored on the inner side of the base 11 toward the back cavity 110 .
  • the movable cantilever 121 can be made of a single material or a combination of multiple materials.
  • the material for making the movable cantilever 121 may be single crystal silicon, polycrystalline silicon, silicon oxide, silicon nitride, silicon oxide, metal, and the like.
  • the movable cantilever 121 can be made of laminates, which can be made of the same material or different materials.
  • the MEMS acoustic sensor 200 further includes a pad 205 , and the pad 205 is fixed on the substrate 21 .
  • the movable cantilever 221 can be made as an independent element, and includes a fixed end 2210, which can be fixed to the side of the pad 205 away from the base 21 by means of gluing or the like, and the movable cantilever 221 has the opposite to the fixed arm 232 and Spaced and extending to the free edge 2211 of the back cavity 210 .
  • each movable cantilever 321 further includes a protrusion 3212, the protrusion 3212 extends from the free edge 3211 downwardly or upwardly or simultaneously in the vibration direction L of the movable cantilever 321 to increase the The area of the overlapping region 30 .
  • the height of the protrusion 3212 is equal to the height of the fixing arm 332 .
  • the height of the protruding portion 3212 in the vibration direction L may not be equal to the height of the fixing arm 332 in the vibration direction L.
  • the fixed comb teeth 331 may be disposed inside the fixed arm 332 .
  • the fixing arm 432 includes a bottom layer 4321 and a top layer 4322, and the bottom layer 4321 and the top layer 4322 are electrically isolated.
  • the fixed arm 432 includes an air gap 4327 between the bottom layer 4321 and the top layer 4322 .
  • the fixed arm 432 includes an insulator layer 4326 between the bottom layer 4321 and the top layer 4322 .
  • the MEMS acoustic sensor may be a differential acoustic sensor.
  • the movable cantilever is configured such that the overlapping area of the protrusion 4212 and the fixed arm 432 in the L direction does not cover the entire surface area of the top or bottom layer when in the rest position.
  • the position control of the movable cantilever can be achieved by controlling and optimizing the stress of the material constituting the movable cantilever.
  • Such a position is preferred in order to allow the overlapping area to increase or decrease during vibration of the active cantilever.
  • the movable cantilever moves upward, the area of the upper overlapping area 401 between the top layer 4322 and the movable cantilever increases, and the capacitance increases; at the same time, the lower overlapping area 402 between the bottom layer 4321 and the movable cantilever increases As the area decreases, the capacitance decreases, and vice versa. Based on this behavior, comparing two signal changes (one capacitance increased and the other decreased relative to the reference signal), a differential output with improved signal-to-noise ratio can be obtained.
  • the structure of the fifth embodiment is the same as that of the first embodiment.
  • the difference between the fifth embodiment and the first embodiment is as follows: the MEMS acoustic sensor 700 in the fifth embodiment further includes a back plate 76 fixed to the substrate, and the back plate 76 and the movable cantilever 721 are spaced apart from each other in the vibration direction L.
  • the back plate 76 and the movable cantilever 721 form capacitive coupling.
  • the back plate 76 has a plurality of through holes 760 therethrough.
  • the back plate 76 is fixed on the base 71 and accommodated in the back cavity 710 .
  • the MEMS acoustic sensor 700 further includes a support member 77 , the support member 77 is located between the back plate 76 and the base 71 , and the back plate 76 is disposed above the movable cantilever 721 .
  • the structure of the sixth embodiment is the same as that of the first embodiment.
  • the difference between the sixth embodiment and the first embodiment is as follows:
  • the stator 83 has two fixed arms 832 extending from the central portion 830 in opposite directions.
  • the stator 83 has a generally elongated shape as a whole.
  • the MEMS acoustic sensor 800 has two movable cantilevers 821 , and the two movable cantilevers 821 are arranged on both sides of the stator 83 and are symmetrical with respect to the stator 83 .
  • the structure of the seventh embodiment is the same as that of the first embodiment.
  • the difference between the seventh embodiment and the first embodiment is as follows: in the seventh embodiment, the stator 93 has three fixed arms 932 extending from the central portion 930 in different directions.
  • the MEMS acoustic sensor 900 has three movable cantilevers 921 .
  • the movable cantilevers 921 are triangular and together with the stator 93 form an axisymmetric triangle.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Abstract

本发明提供了一种MEMS声传感器，其包括具有背腔的基底、定子及活动悬臂，所述定子具有悬置于所述背腔的中心部及自所述中心部延伸至所述基底并固定在所述基底上的至少两个固定臂，所述活动悬臂位于相邻两所述固定臂之间，所述活动悬臂固定在所述基底上，且所述活动悬臂至少部分正对所述背腔。其中，所述活动悬臂具有固定于所述基底的固定端以及与所述固定臂相对且间隔设置的自由边，所述自由边上形成有多个移动梳齿，所述定子具有形成在所述固定臂上的多个固定梳齿，所述移动梳齿和所述固定梳齿彼此配合以形成具有重叠区域的电容器。与相关技术相比，本发明的MEMS声传感器可提高灵敏度。

Description

MEMS声传感器 技术领域
本发明涉及麦克风，尤其涉及一种MEMS声传感器。
 背景技术
相关技术公开了一种梳齿驱动MEMS装置的系统和方法。该梳齿驱动MEMS装置具有一个悬臂和一个定子, 悬臂可在声压波驱动下上下振动。悬臂包括连接其边缘的转子梳齿定子包括固定梳齿。然而，这种由一个悬臂和一个定子形成的MEMS装置灵敏度低。
因此，实有必要提供一种新的MEMS声传感器解决上述技术问题。
 技术问题
本发明的目的在于提供一种MEMS声传感器，以解决相关技术中的MEMS声传感器灵敏度低的问题。
 技术解决方案
为了达到上述目的，本发明提供了一种MEMS声传感器，包括：一种MEMS声传感器，其包括具有背腔的基底、定子以及可振动的活动悬臂，所述定子具有悬置于所述背腔的中心部及自所述中心部延伸至所述基底并固定在所述基底上的至少两个固定臂，所述活动悬臂位于相邻两个所述固定臂之间，所述活动悬臂固定在所述基底上，且所述活动悬臂至少部分正对所述背腔，所述活动悬臂具有固定于所述基底的固定端以及与所述固定臂相对且间隔设置的自由边，所述自由边上形成有多个移动梳齿，所述定子具有形成在所述固定臂上的多个固定梳齿，所述移动梳齿和所述固定梳齿彼此配合以形成具有重叠区域的电容器。
优选地，所述MEMS声传感器，还包括四个所述活动悬臂，所述定子具有四个所述固定臂。
优选地，所述MEMS声传感器还包括衬垫，所述衬垫固定在所述基底上，所述固定端固定在所述衬垫远离所述基底的一侧上。
优选地，所述活动悬臂在振动方向上的高度等于所述固定臂在振动方向上的高度。
优选地，所述活动悬臂的自由边沿所述活动悬臂的振动方向上的高度小于所述定子在振动方向上的高度，所述活动悬臂还包括自所述自由边沿所述活动悬臂的振动方向延伸的突出部；所述突出部的高度等于所述固定臂的高度。
优选地，所述固定臂具有顶层和底层，所述顶层和所述底层彼此间隔并电隔离。
优选地，所述定子还包括形成在所述顶层和所述底层之间的绝缘层。
优选地，在所述顶层和所述底层之间形成气隙。
优选地，所述MEMS声传感器还包括安装在所述基底上的背板，所述背板与所述活动悬臂沿所述活动悬臂的振动方向间隔设置，且所述背板与所述活动悬臂之间电容耦合；所述背板还包括贯穿其上的多个通孔。
优选地，所述定子的中心部悬置于所述背腔的中心位置，所述定子与所述活动悬臂共同构成轴对称图形，所述移动梳齿、固定梳齿均为矩形梳齿状且相互对应间隔设置形成电容。
 有益效果
与相关技术相比，本发明的MEMS声传感器通过在相邻两固定臂之间设有活动悬臂，并在活动悬臂的自由边上设置多个移动梳齿以及在固定臂上设置多个固定梳齿，移动梳齿和固定梳齿彼此配合以形成具有重叠区域的电容器。这样配置MEMS声传感器的结构可以提高其灵敏度。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中。
图1至图3为本发明的MEMS声传感器实施例一的俯视图。
图4为图1所示MEMS声传感器沿A-A方向的剖视图。
图5为图1所示MEMS声传感器沿B-B方向的剖视图。
图6为图1所示MEMS声传感器中受到声波作用情况下某一状态的结构示意图。
图7为本发明的MEMS声传感器实施例二的剖视图。
图8至图11为本发明的MEMS声传感器实施例三的剖视图。
图12至图13为本发明的MEMS声传感器实施例四的剖视图。
图14至图15为本发明的MEMS声传感器实施例五的剖视图。
图16为本发明的MEMS声传感器实施例六的俯视图。
图17为本发明的MEMS声传感器实施例七的俯视图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
实施例一
如图1至图6所示， MEMS声传感器100包括具有背腔110的基底11、定子13及固定在基底11上且至少部分正对背腔110的活动悬臂121。定子13具有悬置于背腔110的中心部130及自中心部130延伸至基底11并固定在基底11上的至少两个固定臂132。活动悬臂121位于相邻两个固定臂132之间且与固定臂132间隔设置。活动悬臂121具有固定于基底11的固定端1210以及与固定臂132相对且间隔设置的自由边1211。L方向为活动悬臂121的振动方向。如图5所示，固定臂132沿L方向的表面与自由边1211沿l方向的表面间隔相对且共同形成具有重叠区域10的电容器。在本实施例中，定子13具有形成在固定臂132上的多个固定梳齿131，并且自由边1211也形成有多个移动梳齿1213。固定梳齿131、移动梳齿1213呈矩形梳齿状且相互对应间隔设置形成电容。如图4所示，沿L方向，固定梳齿131的表面与移动梳齿1213的表面间隔相对共同形成具有重叠区域10的电容器。优选地，活动悬臂121在振动方向L上的高度等于固定臂132在振动方向L上的高度。可以理解的是，在其他实施例中，活动悬臂121在振动方向L上的高度可以不等于固定臂132在振动方向L上的高度。
具体地说，定子13具有四个固定臂132，定子13的中心部130悬置于背腔110的中心位置，MEMS声传感器100具有四个活动悬臂121。如图1所示，四个固定臂132分别自中心部130向基底11的四边延伸，呈对称的十字形状，四个活动悬臂121位于相邻两个固定臂132之间，呈三角形，定子13与活动悬臂121共同形成呈轴对称的正方形。如图2所示，四个固定臂132分别自中心部130向基底11的四角延伸，呈对称的十字形状，活动悬臂121位于相邻两个固定臂132之间，呈三角形，定子13与活动悬臂121共同形成呈轴对称的八边形。如图3所示，四个固定臂132分别自中心部130向基底11的四边延伸，活动悬臂121呈矩形。定子13与活动悬臂121共同形成呈轴对称的正方形。当MEMS声传感器100受到来自活动悬臂121顶部或基底11底部的声压波的影响时，活动悬臂121沿振动方向L上下振动。
活动悬臂121可直接由硅基图案化形成。固定端1210可锚定在基底11朝向背腔110的内侧。
活动悬臂121可由单一材料或多种材料组合制成。例如，制成活动悬臂121的材料可以是单晶硅、多晶硅、氧化硅、氮化硅、氧化硅、金属等。可替换地，活动悬臂121可由叠层制成，叠层可以由相同的材料制成，也可以由不同的材料制成。
实施例二
如图7所示，MEMS声传感器200的大部分元件与实施例一相同。实施例二与实施例一的区别如下：在实施例二中，MEMS声传感器200还包括衬垫205，衬垫205固定在基底21上。活动悬臂221可作为独立元件制成，且包括固定端2210，固定端2210可以通过粘合等方式固定到衬垫205远离所述基底21的一侧上，活动悬臂221具有与固定臂232相对且间隔并延伸至背腔210的自由边2211。
实施例三
如图8-10所示，MEMS声传感器300的大部分元件与实施例一相同。实施例三与实施例一的区别如下：在实施例三中，活动悬臂321的自由边3211沿L方向的高度小于固定臂332的高度。为了增加沿L方向重叠区域30的面积，每个活动悬臂321还包括突出部3212，突出部3212自自由边3211沿活动悬臂321的振动方向L向下延伸或向上延伸或同时向上下延伸以增加重叠区域30的面积。优选地，突出部3212的高度等于固定臂332的高度。
可以理解的是，在其它实施例中，突出部3212在振动方向L上的高度可以不等于固定臂332在振动方向L上的高度。
在本实施例中，如图11所示，固定梳齿331可以设置在固定臂332的内部。
实施例四
如图12,13所示，MEMS声传感器400的大部分元件与实施例三相同。实施例四与实施例三的区别如下：在实施例四中，固定臂432包括底层4321和顶层4322，底层4321和顶层4322之间电隔离。如图12所示，固定臂432包括位于底层4321和顶层4322之间的气隙4327。如图13所示，固定臂432包括位于底层4321和顶层4322之间的绝缘体层4326。突出部4212的侧表面4215的一部分面向顶层4322的侧表面4323以形成上部重叠区域401，并且突出部4212的侧面4215的一部分面向底层4321的侧面4325以形成下重叠区域402。在这种配置下，MEMS声传感器可以是差分声传感器。所述活动悬臂被配置成当处于静止位置时，突出部4212与固定臂432在L方向上的重叠区域不覆盖顶层或底层的整个表面积。所述活动悬臂的位置控制可以通过控制和优化构成活动悬臂的材料的应力来实现。这样的位置是首选的，以便允许重叠区域在活动悬臂振动期间增加或减少。具体地，当受到声压波时，活动悬臂向上移动，顶层4322和活动悬臂之间的上重叠区域401的面积增大，电容增大；同时，底层4321和活动悬臂之间的下重叠区域402的面积减小，电容减小，反之亦然。根据这种行为，比较两个信号变化（相对于参考信号，一个电容增大和另一个电容减小），就能够获得提高信噪比的差分输出。
实施例五
如图14,15所示，实施例五与实施例一的结构相同。实施例五与实施例一的区别如下：实施例五中的MEMS声传感器700还包括固定于基底的背板76，背板76和活动悬臂721在振动方向L上彼此间隔。背板76和活动悬臂721构成电容耦合。背板76具有贯穿其上的多个通孔760。利用这种结构，可以控制活动悬臂721的位置，以便将活动悬臂721的边缘和定子73的边缘布置在最佳位置，以便进行信号处理。
如图14所示，背板76固定在基底71上并收容于背腔710中。
或者，如图15所示，MEMS声传感器700还包括支撑构件77，支撑件77位于背板76与基底71之间，且背板76设置在活动悬臂721的上方。
实施例六
如图16所示，实施例六与实施例一的结构相同。实施例六与实施例一的区别如下：在实施例六中，定子83具有自中心部830向相反方向延伸的两个固定臂832。定子83整体大致呈长条形。MEMS声传感器800具有两个活动悬臂821，且两个活动悬臂821设置在定子83的两侧并且关于定子83对称，活动悬臂821呈矩形，定子83与活动悬臂821共同形成轴对称的正方形。
实施例七
如图17所示，实施例七与实施例一的结构相同。实施例七与实施例一的区别如下：在实施例七中，定子93具有自中心部930向不同方向延伸形成的三个固定臂932。MEMS声传感器900具有三个活动悬臂921，活动悬臂921呈三角形且与定子93共同构成一个轴对称的三角形。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (10)

  1. 一种MEMS声传感器，其包括具有背腔的基底、定子以及可振动的活动悬臂，所述定子具有悬置于所述背腔的中心部及自所述中心部延伸至所述基底并固定在所述基底上的至少两个固定臂，所述活动悬臂位于相邻两个所述固定臂之间，所述活动悬臂固定在所述基底上，且所述活动悬臂至少部分正对所述背腔，其特征在于：所述活动悬臂具有固定于所述基底的固定端以及与所述固定臂相对且间隔设置的自由边，所述自由边上形成有多个移动梳齿，所述定子具有形成在所述固定臂上的多个固定梳齿，所述移动梳齿和所述固定梳齿彼此配合以形成具有重叠区域的电容器。
  2. 根据权利要求1所述的MEMS声传感器，还包括四个所述活动悬臂，所述定子具有四个所述固定臂。
  3. 根据权利要求1所述的MEMS声传感器，还包括衬垫，所述衬垫固定在所述基底上，所述固定端固定在所述衬垫远离所述基底的一侧上。
  4. 根据权利要求1所述的MEMS声传感器，其特征在于，所述活动悬臂在振动方向上的高度等于所述固定臂在振动方向上的高度。
  5. 根据权利要求1所述的MEMS声传感器，其特征在于，所述活动悬臂的自由边沿所述活动悬臂的振动方向上的高度小于所述定子在振动方向上的高度，所述活动悬臂还包括自所述自由边沿所述活动悬臂的振动方向延伸的突出部；所述突出部的高度等于所述固定臂的高度。
  6. 根据权利要求1所述的MEMS声传感器，其特征在于，所述固定臂具有顶层和底层，所述顶层和所述底层彼此间隔并电隔离。
  7. 根据权利要求6所述的MEMS声传感器，其特征在于，所述定子还包括形成在所述顶层和所述底层之间的绝缘层。
  8. 根据权利要求6所述的MEMS声传感器，其特征在于，在所述顶层和所述底层之间形成气隙。
  9. 根据权利要求1所述的MEMS声传感器，还包括安装在所述基底上的背板，所述背板与所述活动悬臂沿活动悬臂的振动方向间隔设置，且所述背板与所述活动悬臂之间电容耦合，所述背板还包括贯穿其上的多个通孔。
  10. 根据权利要求1-9中任意一项所述的MEMS声传感器，其特征在于，所述定子的中心部悬置于所述背腔的中心位置，所述定子与所述活动悬臂共同构成轴对称图形，所述移动梳齿、固定梳齿均为矩形梳齿状且相互对应间隔设置形成电容。
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