WO2022015504A1 - High-energy laser apparatus for thin film temperature sensing - Google Patents

High-energy laser apparatus for thin film temperature sensing Download PDF

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Publication number
WO2022015504A1
WO2022015504A1 PCT/US2021/039694 US2021039694W WO2022015504A1 WO 2022015504 A1 WO2022015504 A1 WO 2022015504A1 US 2021039694 W US2021039694 W US 2021039694W WO 2022015504 A1 WO2022015504 A1 WO 2022015504A1
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WIPO (PCT)
Prior art keywords
layer
conductive substrate
thermally conductive
hel
layer assembly
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PCT/US2021/039694
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French (fr)
Inventor
Jason R. Lavine
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Raytheon Co
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Raytheon Co
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction

Definitions

  • the present disclosure relates to a high-energy laser apparatus and, in particular, to a high-energy laser apparatus with an integrated carbon base layer.
  • HEL Continuous wave high-energy laser tests suggest that highly thermally conductive optical substrates (e.g., single-crystal silicon and aluminum) are anecdotally more impervious to becoming damaged due to foreign object debris (FOD) collection or other similar situations than non-conductive substrates (e.g., fused silica).
  • FOD foreign object debris
  • non-conductive substrates e.g., fused silica
  • certain thermally conductive substrates show promise in testing to have relatively poor surface quality but relatively very good damage resistance as compared to similar non-conductive substrates with better polish characteristics.
  • a high-energy laser (HEL) element includes a non-conductive substrate layer assembly, a reflector layer assembly and a thermally conductive carbon layer.
  • the thermally conductive carbon layer is partially interposed between the non-conductive substrate layer assembly and the reflector layer assembly.
  • the thermally conductive carbon layer includes at least one of a diamond-like carbon crystal growth layer and/or a diamond crystal growth layer.
  • the non-conductive substrate layer assembly includes a non-conductive substrate and one or more thermal matching layers interposed between the non-conductive substrate and the thermally conductive carbon layer.
  • the reflector layer assembly includes multiple broadband high-reflector layers.
  • the thermally conductive carbon layer includes a planar layer axially interposed between the non- conductive substrate layer assembly and the reflector layer assembly and sidewalls extending around a portion of the non-conductive substrate layer assembly.
  • a thermal sensor is coupled to the thermally conductive carbon layer.
  • the thermal sensor is outside an aperture defined by the reflector layers.
  • the thermal sensor includes at least one of a first thermistor coupled to a first surface of the thermally conductive carbon layer and a second thermistor coupled to a second surface of the thermally conductive carbon layer, which is perpendicular to the first surface of the thermally conductive carbon layer.
  • a high-energy laser (HEL) element includes a non-conductive substrate layer assembly, a reflector layer assembly adjacent to the non-conductive substrate layer assembly and including multiple broadband high-reflector layers and a thermally conductive carbon layer.
  • the thermally conductive carbon layer is at least partially interposed between first and second ones of the multiple broadband high-reflector layers.
  • the thermally conductive carbon layer includes at least one of a diamond-like carbon crystal growth layer and/or a diamond crystal growth layer.
  • the non-conductive substrate layer assembly includes a non-conductive substrate and one or more thermal matching layers interposed between the non-conductive substrate and the reflector layer assembly.
  • a thermal sensor is coupled to the thermally conductive carbon layer.
  • the thermal sensor is outside an aperture defined by the reflector layers.
  • the thermal sensor includes at least one of a first thermistor coupled to a first surface of the thermally conductive carbon layer and a second thermistor coupled to a second surface of the thermally conductive carbon layer, which is perpendicular to the first surface of the thermally conductive carbon layer.
  • a method of assembling a high- energy laser (HEL) element includes forming a non-conductive substrate layer assembly, growing a thermally conductive carbon layer on the non-conductive substrate layer assembly, masking a portion of a surface of the thermally conductive carbon layer facing away from the non-conductive substrate layer assembly, attaching a reflector layer assembly to an unmasked portion of the surface and coupling a thermal sensor to the portion of the surface following an unmasking of the portion of the surface.
  • HEL high- energy laser
  • the forming of the non-conductive substrate layer assembly includes polishing a surface of a non-conductive substrate.
  • the forming of the non-conductive substrate layer assembly further includes applying one or more thermal matching layers to the surface of the non-conductive substrate.
  • the growing of the thermally conductive carbon layer includes over-spraying of at least one of diamond-like carbon and/or diamond.
  • the attaching of the reflector layer assembly to the unmasked portion of the surface includes assembling multiple broadband high-reflector layers and patterning the multiple broadband high-reflector layers to define an aperture in which the thermal sensor is disposable.
  • the coupling of the thermal sensor to the portion of the surface includes coupling a first thermistor to the portion of the surface and coupling a second thermistor to an additional surface perpendicular to the portion of the surface.
  • FIG. l is a plan view of a high-energy laser (HEL) element in accordance with embodiments
  • FIG. 2 is a side view of the HEL element of FIG. 1;
  • FIG. 3 is a side view of an HEL element in accordance with alternative embodiments.
  • FIG. 4 is a flow diagram illustration a method of assembling an HEL element in accordance with embodiments.
  • a layer of thermally conductive carbon such as, but not limited to, diamond or diamond-like carbon (DLC), is provided underneath or between high-reflector layers in HEL elements.
  • the layer of thermally conductive carbon maintains a relatively good surface finish through sputtering or polishing operations, serves to spread heat until FOD is ablated or until shot completion instead of causing substrate damage and allows for active monitoring by a thermistor or another thermal sensor.
  • an HEL element 101 includes a non-conductive substrate layer assembly 110, a reflector layer assembly 120 and a thermally conductive carbon layer 130.
  • the non-conductive substrate layer assembly 110 includes a non-conductive substrate 111 with at least a major surface 1110 that is polished or super-polished and, in some cases, one or more thermal matching layers 112 (hereinafter, the one or more thermal matching layers 112 will be referred to as a single thermal matching layer 112 for purposes of clarity and brevity).
  • the non-conductive substrate 111 can be formed of fused silica, for example.
  • thermal matching layer 112 can be interposed between the major surface 1110 of the non-conductive substrate 111 and the thermally conductive carbon layer 130 to provide coefficient of thermal expansion (CTE) matching between the non-conductive substrate 111 and the thermally conductive carbon layer 130.
  • the reflector layer assembly 120 can include multiple broadband high-reflector layers 120i, 120 2 , 120 3 , 120 n (only multiple broadband high-reflector layers 120i, 120 2 ,
  • the thermally conductive carbon layer 130 includes at least one of a diamond like carbon crystal growth layer 131 and a diamond crystal growth layer 132 that is grown on or placed on or sprayed onto the major surface 1110 of the non-conductive substrate 111 of the non-conductive substrate layer assembly 110 in those cases in which no thermal matching layer 112 or general adhesion layer is provided.
  • the thermally conductive carbon layer 130 can be grown on or placed on or sprayed onto a major surface 1120 of the thermal matching layer 112.
  • the thermally conductive carbon layer 130 can be provided as a pre-grown diamond substrate.
  • the thermally conductive carbon layer 130 is at least partially interposed between the major surface 1120 of the thermal matching layer 112 of the non-conductive substrate layer assembly 110 and a proximal one of the multiple broadband high-reflector layers 120i, 120 2 ,..., 120 n of the reflector layer assembly 120 (i.e., broadband high-reflector layer 120i).
  • the thermally conductive carbon layer 130 acts as a heat spreader for the non-conductive substrate layer assembly 110 and the HEL element 101 as a whole.
  • the thermally conductive carbon layer 130 spreads the heat.
  • planar layer portion 133 can include a planar layer portion 133 and sidewall portions 134.
  • the planar layer portion 133 is axially interposed between the major surface 1120 of the thermal matching layer 112 of the non-conductive substrate layer assembly 110 and the proximal one of the multiple broadband high-reflector layers 120i, 120 2 , 120 n of the reflector layer assembly
  • the sidewall portions 134 extend around a portion of the non-conductive substrate layer assembly 110.
  • a major surface 1330 of the planar layer portion 133 corresponds to the major surface 1120 and has a greater dimension (i.e., diameter) than the non-conductive substrate layer assembly 110.
  • the reflector layer assembly 120 can be formed with a cut-out or aperture 122 that exposes a section 1331 of the major surface 1330 of the planar layer portion 133.
  • Respective shapes of the cut-out or aperture 122 and the section 1331 correspond to one another and can be provided in multiple forms including, but not limited to, a chordal section as shown in FIG. 2.
  • a thermal sensor 140 can be coupled to the thermally conductive carbon layer 130.
  • the thermal sensor 140 can be disposed at the cut-out or aperture 122.
  • the thermal sensor 140 includes at least one of a first thermistor 141 that is coupled to a first surface of the thermally conductive carbon layer 130 (i.e., in the section 1331 of the major surface 1330 of the planar layer portion 133) and a second thermistor 142 that is coupled to a second surface of the thermally conductive carbon layer 130, which is perpendicular to the first surface of the thermally conductive carbon layer 130 (i.e., along the sidewall portions 134).
  • an HEL element 301 is provided.
  • the HEL element 301 includes a non-conductive substrate layer 310, a reflector layer assembly 320 with multiple broadband high-reflector layers 320i, 320 2 , ..., 320 n (only multiple broadband high-reflector layers 320i, 320 2 , 320 3 are shown), a thermally conductive carbon layer 330 and a thermal sensor 340.
  • the HEL element 301 as a whole and the non-conductive substrate layer 310, the reflector layer assembly 320 and the thermally conductive carbon layer 330 are generally similar to the HEL element 101 of FIGS. 1 and 2, except that the thermally conductive carbon layer 330 is at least partially interposed between first and second ones of the multiple broadband high-reflector layers (i.e., broadband high-reflector layers 320i and 320 2 ).
  • a method of assembling a high-energy laser (HEL) element such as the HEL element 101 of FIGS. 1 and 2 and the HEL element 301 of FIG. 3, is provided.
  • the method includes forming a non-conductive substrate layer assembly (401) by, for example, polishing a surface of a non-conductive substrate
  • the method also includes growing a thermally conductive carbon layer on the non-conductive substrate layer assembly (402) by, for example, over spraying of at least one of diamond-like carbon and diamond (4021).
  • the method includes masking a portion of a surface of the thermally conductive carbon layer facing away from the non-conductive substrate layer assembly (403), attaching a reflector layer assembly to an unmasked portion of the surface (404) and coupling a thermal sensor to the portion of the surface following an unmasking of the portion of the surface (405).
  • the attaching of the reflector layer assembly to the unmasked portion of the surface of operation 404 can include assembling multiple broadband high-reflector layers into the reflector layer assembly (4041) and patterning the multiple broadband high-reflector layers to define an aperture in which the thermal sensor is disposable (4042).
  • the coupling of the thermal sensor to the portion of the surface of operation 405 can include coupling a first thermistor to the portion of the surface (4051) and coupling a second thermistor to an additional surface perpendicular to the portion of the surface (4052).
  • thermoly conductive carbon layer is at least partially interposed between a non-conductive substrate layer assembly and a reflector layer assembly to act as a heat spreader.
  • the thermally conductive carbon layer thus protects at least the non- conductive substrate layer assembly from high temperatures resulting from a laser being incident on FOD on the reflector layer assembly.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A high-energy laser (HEL) element is provided and includes a non-conductive substrate layer assembly, a reflector layer assembly and a thermally conductive carbon layer. The thermally conductive carbon layer is at least partially interposed between the non-conductive substrate layer assembly and the reflector layer assembly.

Description

HIGH-ENERGY LASER APPARATUS FOR THIN FILM TEMPERATURE SENSING
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to U.S. Application Serial No.
63/051,017, filed July 13, 2020, the contents of which are incorporated by reference herein in its entirety.
BACKGROUND
[0002] The present disclosure relates to a high-energy laser apparatus and, in particular, to a high-energy laser apparatus with an integrated carbon base layer.
[0003] Continuous wave high-energy laser (HEL) tests suggest that highly thermally conductive optical substrates (e.g., single-crystal silicon and aluminum) are anecdotally more impervious to becoming damaged due to foreign object debris (FOD) collection or other similar situations than non-conductive substrates (e.g., fused silica). In particular, certain thermally conductive substrates show promise in testing to have relatively poor surface quality but relatively very good damage resistance as compared to similar non-conductive substrates with better polish characteristics.
[0004] It is believed that thermally conductive optics that survive past fluence testing procedures in a “clean” state (e.g., without infantile failures) are likely to survive certain other operations with increased “dirtiness”. It has been seen that core issues for long-term survivability of optics in certain tactical environments appears to be related to cleanliness.
[0005] Thus, many systems have been designed toward decreasing fluence to thereby reduce particulate damage risks or to have non-common path systems that do not require non- conductive substrates. In some instances, diamond windows have been grown but are typically too thin for tactical applications by themselves at practical sizes.
SUMMARY
[0006] According to an aspect of the disclosure, a high-energy laser (HEL) element is provided and includes a non-conductive substrate layer assembly, a reflector layer assembly and a thermally conductive carbon layer. The thermally conductive carbon layer is partially interposed between the non-conductive substrate layer assembly and the reflector layer assembly. [0007] In accordance with additional or alternative embodiments, the thermally conductive carbon layer includes at least one of a diamond-like carbon crystal growth layer and/or a diamond crystal growth layer.
[0008] In accordance with additional or alternative embodiments, the non-conductive substrate layer assembly includes a non-conductive substrate and one or more thermal matching layers interposed between the non-conductive substrate and the thermally conductive carbon layer.
[0009] In accordance with additional or alternative embodiments, the reflector layer assembly includes multiple broadband high-reflector layers.
[0010] In accordance with additional or alternative embodiments, the thermally conductive carbon layer includes a planar layer axially interposed between the non- conductive substrate layer assembly and the reflector layer assembly and sidewalls extending around a portion of the non-conductive substrate layer assembly.
[0011] In accordance with additional or alternative embodiments, a thermal sensor is coupled to the thermally conductive carbon layer.
[0012] In accordance with additional or alternative embodiments, the thermal sensor is outside an aperture defined by the reflector layers.
[0013] In accordance with additional or alternative embodiments, the thermal sensor includes at least one of a first thermistor coupled to a first surface of the thermally conductive carbon layer and a second thermistor coupled to a second surface of the thermally conductive carbon layer, which is perpendicular to the first surface of the thermally conductive carbon layer.
[0014] According to an aspect of the disclosure, a high-energy laser (HEL) element is provided and includes a non-conductive substrate layer assembly, a reflector layer assembly adjacent to the non-conductive substrate layer assembly and including multiple broadband high-reflector layers and a thermally conductive carbon layer. The thermally conductive carbon layer is at least partially interposed between first and second ones of the multiple broadband high-reflector layers.
[0015] In accordance with additional or alternative embodiments, the thermally conductive carbon layer includes at least one of a diamond-like carbon crystal growth layer and/or a diamond crystal growth layer.
[0016] In accordance with additional or alternative embodiments, the non-conductive substrate layer assembly includes a non-conductive substrate and one or more thermal matching layers interposed between the non-conductive substrate and the reflector layer assembly.
[0017] In accordance with additional or alternative embodiments, a thermal sensor is coupled to the thermally conductive carbon layer.
[0018] In accordance with additional or alternative embodiments, the thermal sensor is outside an aperture defined by the reflector layers.
[0019] In accordance with additional or alternative embodiments, the thermal sensor includes at least one of a first thermistor coupled to a first surface of the thermally conductive carbon layer and a second thermistor coupled to a second surface of the thermally conductive carbon layer, which is perpendicular to the first surface of the thermally conductive carbon layer.
[0020] According to an aspect of the disclosure, a method of assembling a high- energy laser (HEL) element is provided and includes forming a non-conductive substrate layer assembly, growing a thermally conductive carbon layer on the non-conductive substrate layer assembly, masking a portion of a surface of the thermally conductive carbon layer facing away from the non-conductive substrate layer assembly, attaching a reflector layer assembly to an unmasked portion of the surface and coupling a thermal sensor to the portion of the surface following an unmasking of the portion of the surface.
[0021] In accordance with additional or alternative embodiments, the forming of the non-conductive substrate layer assembly includes polishing a surface of a non-conductive substrate.
[0022] In accordance with additional or alternative embodiments, the forming of the non-conductive substrate layer assembly further includes applying one or more thermal matching layers to the surface of the non-conductive substrate.
[0023] In accordance with additional or alternative embodiments, the growing of the thermally conductive carbon layer includes over-spraying of at least one of diamond-like carbon and/or diamond.
[0024] In accordance with additional or alternative embodiments, the attaching of the reflector layer assembly to the unmasked portion of the surface includes assembling multiple broadband high-reflector layers and patterning the multiple broadband high-reflector layers to define an aperture in which the thermal sensor is disposable.
[0025] In accordance with additional or alternative embodiments, the coupling of the thermal sensor to the portion of the surface includes coupling a first thermistor to the portion of the surface and coupling a second thermistor to an additional surface perpendicular to the portion of the surface.
[0026] Additional features and advantages are realized through the techniques of the present invention. Other embodiments and aspects of the invention are described in detail herein and are considered a part of the claimed invention. For a better understanding of the invention with the advantages and the features, refer to the description and to the drawings.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0027] For a more complete understanding of this disclosure, reference is now made to the following brief description, taken in connection with the accompanying drawings and detailed description, wherein like reference numerals represent like parts:
[0028] FIG. l is a plan view of a high-energy laser (HEL) element in accordance with embodiments;
[0029] FIG. 2 is a side view of the HEL element of FIG. 1;
[0030] FIG. 3 is a side view of an HEL element in accordance with alternative embodiments; and
[0031] FIG. 4 is a flow diagram illustration a method of assembling an HEL element in accordance with embodiments.
DETAILED DESCRIPTION
[0032] As will be described below, a layer of thermally conductive carbon such as, but not limited to, diamond or diamond-like carbon (DLC), is provided underneath or between high-reflector layers in HEL elements. The layer of thermally conductive carbon maintains a relatively good surface finish through sputtering or polishing operations, serves to spread heat until FOD is ablated or until shot completion instead of causing substrate damage and allows for active monitoring by a thermistor or another thermal sensor.
[0033] With reference to FIGS. 1 and 2, an HEL element 101 is provided and includes a non-conductive substrate layer assembly 110, a reflector layer assembly 120 and a thermally conductive carbon layer 130. The non-conductive substrate layer assembly 110 includes a non-conductive substrate 111 with at least a major surface 1110 that is polished or super-polished and, in some cases, one or more thermal matching layers 112 (hereinafter, the one or more thermal matching layers 112 will be referred to as a single thermal matching layer 112 for purposes of clarity and brevity). The non-conductive substrate 111 can be formed of fused silica, for example. Where applicable, thermal matching layer 112 can be interposed between the major surface 1110 of the non-conductive substrate 111 and the thermally conductive carbon layer 130 to provide coefficient of thermal expansion (CTE) matching between the non-conductive substrate 111 and the thermally conductive carbon layer 130. The reflector layer assembly 120 can include multiple broadband high-reflector layers 120i, 1202, 1203, 120n (only multiple broadband high-reflector layers 120i, 1202,
I2O3 are shown).
[0034] The thermally conductive carbon layer 130 includes at least one of a diamond like carbon crystal growth layer 131 and a diamond crystal growth layer 132 that is grown on or placed on or sprayed onto the major surface 1110 of the non-conductive substrate 111 of the non-conductive substrate layer assembly 110 in those cases in which no thermal matching layer 112 or general adhesion layer is provided. Conversely, where the non-conductive substrate layer assembly 110 includes the thermal matching layer 112, the thermally conductive carbon layer 130 can be grown on or placed on or sprayed onto a major surface 1120 of the thermal matching layer 112. In those cases where the thermally conductive carbon layer 130 is placed on the major surface 1110 of the non-conductive substrate 111 or the major surface 1120 of the thermal matching layer 112, the thermally conductive carbon layer 130 can be provided as a pre-grown diamond substrate.
[0035] The following description will be directed to those cases in which the non- conductive substrate layer assembly 110 includes the thermal matching layer 112. This is done for purposes of clarity and brevity and should not be interpreted as limiting of the overall scope of the disclosure in any way.
[0036] The thermally conductive carbon layer 130 is at least partially interposed between the major surface 1120 of the thermal matching layer 112 of the non-conductive substrate layer assembly 110 and a proximal one of the multiple broadband high-reflector layers 120i, 1202,..., 120n of the reflector layer assembly 120 (i.e., broadband high-reflector layer 120i). In this way, the thermally conductive carbon layer 130 acts as a heat spreader for the non-conductive substrate layer assembly 110 and the HEL element 101 as a whole. In particular, where the reflector layer assembly 120 has FOD disposed thereon and the HEL is incident on the FOD disposed on the reflector layer assembly 120 and thus causes a temperature increase for the HEL element 101, the thermally conductive carbon layer 130 spreads the heat.
[0037] In greater detail and as shown in FIG. 2, the thermally conductive carbon layer
130 can include a planar layer portion 133 and sidewall portions 134. The planar layer portion 133 is axially interposed between the major surface 1120 of the thermal matching layer 112 of the non-conductive substrate layer assembly 110 and the proximal one of the multiple broadband high-reflector layers 120i, 1202, 120n of the reflector layer assembly
120 (i.e., broadband high-reflector layer 120i). The sidewall portions 134 extend around a portion of the non-conductive substrate layer assembly 110.
[0038] A major surface 1330 of the planar layer portion 133 corresponds to the major surface 1120 and has a greater dimension (i.e., diameter) than the non-conductive substrate layer assembly 110. The reflector layer assembly 120 can be formed with a cut-out or aperture 122 that exposes a section 1331 of the major surface 1330 of the planar layer portion 133. Respective shapes of the cut-out or aperture 122 and the section 1331 correspond to one another and can be provided in multiple forms including, but not limited to, a chordal section as shown in FIG. 2.
[0039] A thermal sensor 140 can be coupled to the thermally conductive carbon layer 130. In accordance with embodiments, the thermal sensor 140 can be disposed at the cut-out or aperture 122. In accordance with further embodiments, the thermal sensor 140 includes at least one of a first thermistor 141 that is coupled to a first surface of the thermally conductive carbon layer 130 (i.e., in the section 1331 of the major surface 1330 of the planar layer portion 133) and a second thermistor 142 that is coupled to a second surface of the thermally conductive carbon layer 130, which is perpendicular to the first surface of the thermally conductive carbon layer 130 (i.e., along the sidewall portions 134).
[0040] With reference to FIG. 3 and in accordance with alternative embodiments, an HEL element 301 is provided. The HEL element 301 includes a non-conductive substrate layer 310, a reflector layer assembly 320 with multiple broadband high-reflector layers 320i, 3202, ..., 320n (only multiple broadband high-reflector layers 320i, 3202, 3203 are shown), a thermally conductive carbon layer 330 and a thermal sensor 340. The HEL element 301 as a whole and the non-conductive substrate layer 310, the reflector layer assembly 320 and the thermally conductive carbon layer 330 are generally similar to the HEL element 101 of FIGS. 1 and 2, except that the thermally conductive carbon layer 330 is at least partially interposed between first and second ones of the multiple broadband high-reflector layers (i.e., broadband high-reflector layers 320i and 3202).
[0041] With reference to FIG. 4, a method of assembling a high-energy laser (HEL) element, such as the HEL element 101 of FIGS. 1 and 2 and the HEL element 301 of FIG. 3, is provided. As shown in FIG. 4, the method includes forming a non-conductive substrate layer assembly (401) by, for example, polishing a surface of a non-conductive substrate
(4011) and, in some cases, applying a thermal matching layer to the surface of the non- conductive substrate (4012). The method also includes growing a thermally conductive carbon layer on the non-conductive substrate layer assembly (402) by, for example, over spraying of at least one of diamond-like carbon and diamond (4021). In addition, the method includes masking a portion of a surface of the thermally conductive carbon layer facing away from the non-conductive substrate layer assembly (403), attaching a reflector layer assembly to an unmasked portion of the surface (404) and coupling a thermal sensor to the portion of the surface following an unmasking of the portion of the surface (405). The attaching of the reflector layer assembly to the unmasked portion of the surface of operation 404 can include assembling multiple broadband high-reflector layers into the reflector layer assembly (4041) and patterning the multiple broadband high-reflector layers to define an aperture in which the thermal sensor is disposable (4042). The coupling of the thermal sensor to the portion of the surface of operation 405 can include coupling a first thermistor to the portion of the surface (4051) and coupling a second thermistor to an additional surface perpendicular to the portion of the surface (4052).
[0042] In a FOD thermal analysis, a laser beam incident on a lens without a diamond substrate resulted in about a 1,600°C rise in temperature of the lens (FOD diameter about 5pm and thickness about 3.33 pm; lens diameter about 5 inches and thickness about 0.5 pm). By contrast, in another FOD thermal analysis, a laser beam incident on a lens with a diamond substrate resulted in only about a 25°C rise in temperature of the lens (FOD diameter about 5pm and thickness about 3.33 pm; diamond substrate diameter about 5 inches and thickness about 1 pm; lens diameter about 5 inches and thickness about 0.5 pm).
[0043] Technical effects and benefits of the present invention are the provision of an HEL element in which a thermally conductive carbon layer is at least partially interposed between a non-conductive substrate layer assembly and a reflector layer assembly to act as a heat spreader. The thermally conductive carbon layer thus protects at least the non- conductive substrate layer assembly from high temperatures resulting from a laser being incident on FOD on the reflector layer assembly.
[0044] The corresponding structures, materials, acts, and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The description of the present invention has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
[0045] While the preferred embodiments to the invention have been described, it will be understood that those skilled in the art, both now and in the future, may make various improvements and enhancements which fall within the scope of the claims which follow. These claims should be construed to maintain the proper protection for the invention first described.

Claims

CLAIMS What is claimed is:
1. A high-energy laser (HEL) element, comprising: a non-conductive substrate layer assembly; a reflector layer assembly; and a thermally conductive carbon layer at least partially interposed between the non- conductive substrate layer assembly and the reflector layer assembly.
2. The HEL element according to claim 1, wherein the thermally conductive carbon layer comprises at least one of a diamond-like carbon crystal growth layer and/or a diamond crystal growth layer.
3. The HEL element according to claim 1, wherein the non-conductive substrate layer assembly comprises: a non-conductive substrate; and one or more thermal matching layers interposed between the non-conductive substrate and the thermally conductive carbon layer.
4. The HEL element according to claim 1, wherein the reflector layer assembly comprises multiple broadband high-reflector layers.
5. The HEL element according to claim 1, wherein the thermally conductive carbon layer comprises: a planar layer axially interposed between the non-conductive substrate layer assembly and the reflector layer assembly; and sidewalls extending around a portion of the non-conductive substrate layer assembly.
6. The HEL element according to claim 1, further comprising a thermal sensor coupled to the thermally conductive carbon layer.
7. The HEL element according to claim 6, wherein the thermal sensor is outside an aperture defined by the reflector layers.
8. The HEL element according to claim 6, wherein the thermal sensor comprises at least one of: a first thermistor coupled to a first surface of the thermally conductive carbon layer; and a second thermistor coupled to a second surface of the thermally conductive carbon layer, which is perpendicular to the first surface of the thermally conductive carbon layer.
9. A high-energy laser (HEL) element, comprising: a non-conductive substrate layer assembly; a reflector layer assembly adjacent to the non-conductive substrate layer assembly and comprising multiple broadband high-reflector layers; and a thermally conductive carbon layer at least partially interposed between first and second ones of the multiple broadband high-reflector layers.
10. The HEL element according to claim 9, wherein the thermally conductive carbon layer comprises at least one of a diamond-like carbon crystal growth layer and/or a diamond crystal growth layer.
11. The HEL element according to claim 9, wherein the non-conductive substrate layer assembly comprises: a non-conductive substrate; and one or more thermal matching layers interposed between the non-conductive substrate and the reflector layer assembly.
12. The HEL element according to claim 9, further comprising a thermal sensor coupled to the thermally conductive carbon layer.
13. The HEL element according to claim 12, wherein the thermal sensor is outside an aperture defined by the reflector layers.
14. The HEL element according to claim 12, wherein the thermal sensor comprises at least one of: a first thermistor coupled to a first surface of the thermally conductive carbon layer; and a second thermistor coupled to a second surface of the thermally conductive carbon layer, which is perpendicular to the first surface of the thermally conductive carbon layer.
15. A method of assembling a high-energy laser (HEL) element, the method comprising: forming a non-conductive substrate layer assembly; growing a thermally conductive carbon layer on the non-conductive substrate layer assembly; masking a portion of a surface of the thermally conductive carbon layer facing away from the non-conductive substrate layer assembly; attaching a reflector layer assembly to an unmasked portion of the surface; and coupling a thermal sensor to the portion of the surface following an unmasking of the portion of the surface.
16. The method according to claim 15, wherein the forming of the non-conductive substrate layer assembly comprises polishing a surface of a non-conductive substrate.
17. The method according to claim 16, wherein the forming of the non-conductive substrate layer assembly further comprises applying one or more thermal matching layers to the surface of the non-conductive substrate.
18. The method according to claim 15, wherein the growing of the thermally conductive carbon layer comprises over-spraying of at least one of diamond-like carbon and/or diamond.
19. The method according to claim 15, wherein the attaching of the reflector layer assembly to the unmasked portion of the surface comprises: assembling multiple broadband high-reflector layers; and patterning the multiple broadband high-reflector layers to define an aperture in which the thermal sensor is disposable.
20. The method according to claim 15, wherein the coupling of the thermal sensor to the portion of the surface comprises: coupling a first thermistor to the portion of the surface; and coupling a second thermistor to an additional surface perpendicular to the portion of the surface.
PCT/US2021/039694 2020-07-13 2021-06-29 High-energy laser apparatus for thin film temperature sensing Ceased WO2022015504A1 (en)

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