WO2022011906A1 - 可降解整流器件及其制作方法 - Google Patents

可降解整流器件及其制作方法 Download PDF

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Publication number
WO2022011906A1
WO2022011906A1 PCT/CN2020/129564 CN2020129564W WO2022011906A1 WO 2022011906 A1 WO2022011906 A1 WO 2022011906A1 CN 2020129564 W CN2020129564 W CN 2020129564W WO 2022011906 A1 WO2022011906 A1 WO 2022011906A1
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Prior art keywords
layer
degradable
junction
encapsulation
silicon
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English (en)
French (fr)
Inventor
江文
朱朋莉
孙蓉
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Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/32—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries for charging batteries from a charging set comprising a non-electric prime mover rotating at constant speed
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/04—Friction generators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B40/00—Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers

Definitions

  • Embodiments of the present invention relate to the technical field of power electronics, and in particular, to a degradable rectifier device and a manufacturing method thereof.
  • Transient electron is an emerging degradable electronic device preparation technology, which means that after the device completes the specified function, its physical form and function can be partially or completely disappeared immediately under the trigger of external stimuli. Therefore, transient electron The technology holds great promise for implantable electronic medical devices.
  • the sustainable power supply of implantable electronic medical equipment usually needs to be charged by an external power supply.
  • the newly developed triboelectric nanogenerator in recent years is a technology that can convert environmental mechanical energy into electrical energy output, but its output electrical energy is alternating current, which needs to be converted into direct current to charge implantable electronic medical devices.
  • the current rectifier devices are all metal leads and plastic packages, the overall size is large and the structure is rigid, and they are not degradable, so they are not suitable for degradable implantable electronic medical equipment.
  • the present invention provides a degradable rectifier device and a manufacturing method thereof, so as to realize the full degradability of the rectifier device.
  • the present invention provides a degradable rectifier device, comprising a base layer, a device layer and an encapsulation layer, the device layer is arranged on the base layer, the encapsulation layer is arranged on the device layer, The materials of the base layer, the device layer and the encapsulation layer are all degradable materials.
  • the materials of the base layer and the encapsulation layer include biocompatible and bioabsorbable polymer materials.
  • the thickness of the base layer is 10 ⁇ m-500 ⁇ m, and/or the thickness of the encapsulation layer is 10 ⁇ m-500 ⁇ m.
  • the device layer includes a PN junction layer and a conductive circuit layer, the PN junction layer is provided on the base layer, and the conductive circuit layer is provided on the PN junction layer.
  • the device layer includes a PN junction and a conductive line, and both the PN junction and the conductive line are directly disposed on the base layer and form a rectifier bridge structure.
  • the present invention provides a method for manufacturing a degradable rectifier device, comprising:
  • the base layer and the encapsulation layer are formed from the preset degradable polymer material by the preset film-forming method;
  • the encapsulation layer is covered on the device layer to form a degradable rectifier device.
  • the preset film forming method includes one of casting film forming, spin coating film forming, casting film forming and melting film forming.
  • the device layer includes a PN junction layer and a conductive circuit layer, and forming a device layer with degradable properties on the base layer includes:
  • a silicon-on-insulator membrane is provided, the silicon-on-insulator membrane includes a lower silicon substrate, an intermediate oxide layer, and an upper silicon layer, the intermediate oxide layer is disposed on the lower silicon substrate, and the upper silicon layer is disposed on the a side of the intermediate oxide layer away from the lower silicon substrate, the upper silicon layer is pre-doped with a first doping element, and the first doping element is selected from one of boron element and phosphorus element;
  • the upper silicon layer is subjected to photolithography processing and doping processing in sequence, so that a second doping element is doped into the upper silicon layer, and the second doping element is selected from one of boron element and phosphorus element. species, and the second doping element is different from the first doping element;
  • the PN junction sheet is transferred to the base layer to form a PN junction layer, and a conductive circuit layer is formed on the PN junction layer.
  • forming a device layer with degradable properties on the base layer includes:
  • a silicon-on-insulator membrane is provided, the silicon-on-insulator membrane includes a lower silicon substrate, an intermediate oxide layer, and an upper silicon layer, the intermediate oxide layer is disposed on the lower silicon substrate, and the upper silicon layer is disposed on the a side of the intermediate oxide layer away from the lower silicon substrate, the upper silicon layer is pre-doped with a first doping element, and the first doping element is selected from one of boron element and phosphorus element;
  • the upper silicon layer is subjected to photolithography processing and doping processing in sequence, so that a second doping element is doped into the upper silicon layer of the PN junction region, and the second doping element is selected from boron and phosphorus One of the elements, and the second doping element is different from the first doping element, to obtain a second silicon wafer formed with a PN junction;
  • the device layer is transferred to the base layer.
  • covering the encapsulation layer on the device layer to form a degradable rectifier device includes:
  • the degradable rectifier device provided by the embodiment of the present invention is composed of a base layer, a device layer and an encapsulation layer. Since the base layer, the device layer and the encapsulation layer are all made of degradable materials, the degradable rectifier device is fully degradable, and it is The implantable degradable triboelectric nanogenerator can convert the alternating current obtained by collecting mechanical energy in the living body into a direct current signal, thereby further solving the key problem that the degradable triboelectric nanogenerator cannot directly charge energy storage devices such as batteries or capacitors. Broaden power sources for degradable implantable electronic medical devices.
  • FIG. 1 is a schematic structural diagram of a degradable rectifier device provided in Embodiment 1 of the present invention.
  • FIG. 2 is a circuit diagram of a degradable rectifier device provided in Embodiment 1 of the present invention.
  • FIG. 3 is a schematic flowchart of a method for fabricating a degradable rectifier device according to Embodiment 2 of the present invention.
  • FIG. 4 is a schematic flowchart of a method for manufacturing a degradable rectifier device provided in Embodiment 3 of the present invention.
  • FIG. 5A is a schematic structural diagram of an SOI silicon wafer provided in Embodiment 3 of the present invention.
  • FIG. 5B is a schematic structural diagram of an SOI silicon wafer forming a PN junction according to Embodiment 3 of the present invention.
  • 5C is a schematic structural diagram of a PN junction sheet provided in Embodiment 3 of the present invention.
  • FIG. 1 is a schematic structural diagram of a degradable rectifier device provided in the first embodiment of the present invention.
  • the degradable rectifier device provided by the embodiment of the present invention can be used as a rectifier component of a degradable implantable electronic medical device, and can be For the preparation of the manufacturing method of the degradable rectifier device provided by any embodiment of the present invention, the content not described in detail in this embodiment may also refer to the description of any method embodiment of the present invention.
  • the degradable rectifier device provided by the embodiment of the present invention includes: a base layer 100 , a device layer 200 and an encapsulation layer 300 , the base layer 100 is located at the bottom, the device layer 200 is located on the base layer 100 , and the encapsulation layer 300 On the device layer 200 , the materials of the base layer 100 , the device layer 200 and the encapsulation layer 300 are all made of degradable materials.
  • the materials of the base layer 100 and the encapsulation layer 300 are made of polymer materials with good biocompatibility and bioabsorbability, including synthetic polymer materials and natural source polymer materials, such as collagen, gelatin, soybean protein , egg white, silk fibroin, sodium alginate, cellulose, lignin, chitin, chitosan, hyaluronic acid, polycaprolactone, polylactic acid, polylactic acid-glycolic acid copolymer, polyvinyl alcohol, microbial polymer Ester, polydioxanone, polyanhydride, etc.
  • synthetic polymer materials and natural source polymer materials such as collagen, gelatin, soybean protein , egg white, silk fibroin, sodium alginate, cellulose, lignin, chitin, chitosan, hyaluronic acid, polycaprolactone, polylactic acid, polylactic acid-glycolic acid copolymer, polyvinyl alcohol, microbial polymer Ester, polydi
  • Both the base layer 100 and the encapsulation layer 300 can be made of one or more of the above-mentioned materials, and the two can be made of the same material or different materials.
  • the thicknesses of the base layer 100 and the encapsulation layer 300 are both between 10 ⁇ m and 500 ⁇ m (including both end points), and the thicknesses of the two may be the same or different.
  • the device layer 200 includes a PN junction layer 210 and a conductive circuit layer 220 .
  • the PN junction layer 210 is provided on the base layer 100
  • the conductive circuit layer 220 is provided on the PN junction layer 210 .
  • the PN junction layer 210 is made of SOI (Silicon on Insulator, silicon on insulator) silicon wafer as raw material.
  • SOI silicon wafer is composed of three parts: an upper silicon layer, an intermediate oxide layer and a lower silicon substrate.
  • Donor impurities or acceptor impurities are doped in the upper silicon layer of the SOI silicon wafer by means of photolithography, high temperature diffusion or ion implantation in turn, which is the opposite of the impurity type pre-doped in the upper silicon layer of the SOI silicon wafer.
  • Impurity elements can make the upper silicon layer of the SOI silicon wafer form a PN junction.
  • the upper silicon layer of the SOI silicon wafer is pre-doped with the donor impurity phosphorus, then the upper silicon layer of the SOI silicon wafer
  • the upper silicon layer of the SOI silicon wafer is doped with acceptor impurity boron by means of high temperature diffusion or ion implantation, so that the upper silicon layer of the SOI silicon wafer forms a PN junction structure.
  • the intermediate oxide layer of the SOI silicon wafer is removed by etching, so that the upper silicon layer of the SOI silicon wafer is peeled off separately to obtain the PN junction layer 210 .
  • the device layer 200 includes a PN junction and a conductive line, and is a single-layer structure.
  • the PN junction region and the conductive line region are set on the upper silicon layer of the SOI silicon wafer, and then the PN junction region in the upper silicon layer of the SOI silicon wafer is doped with SOI by means of photolithography, high temperature diffusion or ion implantation.
  • the impurity element (acceptor impurity or donor impurity) of the opposite impurity type pre-doped in the upper silicon layer of the silicon wafer can make the PN junction region of the upper silicon layer of the SOI silicon wafer form a structure including four PN junctions.
  • the middle oxide layer of the SOI silicon wafer is removed by an etching method, so that the upper silicon layer of the SOI silicon wafer is peeled off separately, and the device layer 200 is obtained.
  • the device layer 200 forms a bridge rectifier circuit through the PN junction layer 210 and the conductive circuit layer 220.
  • the circuit diagram is shown in FIG. 2.
  • the alternating current is input from the input terminal 230, and is rectified by the diode (ie, the PN junction), and the direct current is output from the output terminal 240. This completes the conversion from alternating current to direct current.
  • the PN junction sheet is transferred to the base layer 100, and then a high-resolution mask method is used to form a conductive circuit layer 220 on the PN junction layer 210 by metal evaporation, and one or more PN junctions are connected to form a rectifier circuit,
  • the conductive circuit layer 220 in this embodiment can be evaporated using degradable metals such as magnesium, molybdenum, tungsten, iron, etc., and the metal in the conductive circuit area constitutes a degradable conductive path, that is, the wire circuit on the base layer 100 The area forms a degradable conductive path, wherein the metal evaporation method can be a method such as magnetron sputtering or electron beam evaporation.
  • the device layer 200 is located between the base layer 100 and the encapsulation layer 300, and is the main working part of the degradable rectifier device.
  • a sealing material is also passed between the base layer 100 and the encapsulation layer 300. Sealing, sealing materials such as degradable material adhesives, etc.
  • the encapsulation structure of the degradable rectifier device may also be an encapsulation shell, that is, the encapsulation layer 300 can be replaced by an encapsulation shell.
  • the device layer 200 is placed on the base layer 100 to form a semi-finished degradable device, and then the semi-finished degradable device is encapsulated as a whole through an encapsulation casing, so that the semi-finished degradable device is sealed around to form a sealed structure.
  • the degradable rectifier device provided by the embodiment of the present invention is composed of a base layer, a device layer and an encapsulation layer. Since the base layer, the device layer and the encapsulation layer are all made of degradable materials, the degradable rectifier device is fully degradable, and it is The implantable degradable triboelectric nanogenerator can convert the alternating current obtained by collecting mechanical energy in the living body into a direct current signal, thereby further solving the key problem that the degradable triboelectric nanogenerator cannot directly charge energy storage devices such as batteries or capacitors. Broaden power sources for degradable implantable electronic medical devices.
  • FIG. 3 is a schematic flowchart of a method for fabricating a degradable rectifier device provided in Embodiment 2 of the present invention.
  • the method for fabricating a degradable rectifier device provided by the embodiment of the present invention can be used to fabricate a rectifier device with fully degradable performance, that is, it can be used
  • For the preparation of the degradable rectifier device provided in any embodiment of the present invention for the content not described in detail in this embodiment, reference may also be made to the description of any embodiment of the degradable rectifier device of the present invention.
  • the manufacturing method of the degradable rectifier device provided by the embodiment of the present invention includes:
  • degradable polymer materials refer to polymer materials with good biocompatibility and bioabsorbability, including synthetic polymer materials and natural source polymer materials, such as collagen, gelatin, soybean protein, Egg white, silk fibroin, sodium alginate, cellulose, lignin, chitin, chitosan, hyaluronic acid, polycaprolactone, polylactic acid, polylactic acid-glycolic acid copolymer, polyvinyl alcohol, microbial polyester , Poly-dioxanone, polyanhydride, etc.
  • synthetic polymer materials and natural source polymer materials such as collagen, gelatin, soybean protein, Egg white, silk fibroin, sodium alginate, cellulose, lignin, chitin, chitosan, hyaluronic acid, polycaprolactone, polylactic acid, polylactic acid-glycolic acid copolymer, polyvinyl alcohol, microbial polyester , Poly-dioxanone, polyanhydride, etc.
  • the preset film forming method includes one of casting film forming, spin coating film forming, casting film forming and melting film forming.
  • Cast film is quenched by melt casting to produce a non-stretched, non-oriented cast film.
  • Spin coating is the process of spinning the material at high speed to form a uniform film.
  • Casting into a film refers to casting a solution on a carrier using a casting die, and the casting solution is peeled off from the carrier in the form of a polymer film, and is wound into a polymer film after drying.
  • Melt film-forming refers to the extrusion of polymer melt, which crystallizes under tensile stress to form a film structure that is perpendicular to the extrusion direction and parallel to the extrusion direction.
  • the degradable polymer material is formed into a thin film, and the formed thin film can be used as a base layer or an encapsulation layer.
  • the base layer and the encapsulation layer can be made of the same material or different materials.
  • the thickness of the base layer or the encapsulation layer is between 10 ⁇ m and 500 ⁇ m (including both endpoints), and the thickness of the base layer and the thickness of the encapsulation layer may be the same or different.
  • the base layer and the encapsulation layer are made of the same material and thickness, so that they can be prepared at one time during the preparation process, and even if they are prepared in batches, there is no need to adjust equipment parameters, which is more convenient.
  • the device layer is the main working part of the degradable rectifier device. It is arranged on the base layer and is made of degradable materials. Its circuit structure is a bridge rectifier circuit, as shown in FIG. 2 . According to the circuit diagram shown in Figure 2, it can be seen that the device layer is mainly composed of a PN junction layer and a conductive circuit layer, and a PN junction layer and a conductive circuit layer are formed on the base layer in turn to form the device layer, wherein the PN junction layer can be SOI silicon.
  • the sheet is made of raw materials, and the conductive circuit layer is made of degradable metal.
  • a prefabricated encapsulation layer is covered on the device layer, so that the device layer is located between the base layer and the encapsulation layer, thereby forming a complete degradable rectifier device.
  • the base layer and the encapsulation layer have a protective effect, so that the device layer is isolated from the outside world and is not affected by external impurities. Since the base layer, the device layer and the encapsulation layer are all made of degradable materials, the formed degradable rectifier device is naturally fully degradable.
  • the encapsulation structure of the degradable rectifier device may also be an encapsulation shell, that is, the encapsulation layer 300 can be replaced by an encapsulation shell.
  • the device layer 200 is placed on the base layer 100 to form a semi-finished degradable device, and then the semi-finished degradable device is encapsulated as a whole through an encapsulation casing, so that the semi-finished degradable device is sealed around to form a sealed structure. If an encapsulation case is used for encapsulation, the encapsulation layer is not formed in step S11, and the encapsulation case is formed in step S13.
  • the manufacturing method of the degradable rectifier device makes the degradable rectifier device fully degradable, and it can convert the alternating current obtained by the implantable degradable triboelectric nanogenerator collected mechanical energy and converted in the living body into a direct current signal, This can further solve the key problem that degradable triboelectric nanogenerators cannot directly charge energy storage devices such as batteries or capacitors, and broaden the source of power for degradable implantable electronic medical devices.
  • FIG. 4 is a schematic flowchart of a method for fabricating a degradable rectifier device according to Embodiment 3 of the present invention, and this embodiment is a further refinement of the above-mentioned embodiment.
  • the manufacturing method of the degradable rectifier device provided by the third embodiment of the present invention includes:
  • a silicon-on-insulator membrane where the silicon-on-insulator membrane includes a lower silicon substrate, an intermediate oxide layer and an upper silicon layer.
  • a silicon-on-insulator film is an SOI silicon wafer, which includes a lower silicon substrate, an intermediate oxide layer and an upper silicon layer, the intermediate oxide layer is arranged on the lower silicon substrate, and the upper silicon layer is arranged on the intermediate oxide layer away from the lower silicon substrate
  • the upper silicon layer is pre-doped with a first doping element, and the first doping element is selected from one of boron element and phosphorus element.
  • the SOI silicon wafer includes an upper silicon layer 51 , an intermediate oxide layer 52 and a lower silicon substrate 53 , wherein the upper silicon layer 51 of the SOI silicon wafer is pre-doped with donor impurities or acceptor impurities. That is, the upper silicon layer 51 of the SOI silicon wafer is an N-type semiconductor or a P-type semiconductor.
  • the upper silicon layer 51 of the SOI silicon wafer is pre-doped with a donor impurity, such as phosphorus
  • the upper silicon layer 51 of the SOI silicon wafer is N type semiconductor
  • the upper silicon layer 51 of the SOI silicon wafer is pre-doped with a donor impurity, such as boron
  • the upper silicon layer 51 of the SOI silicon wafer is a P-type semiconductor.
  • the second doping element is selected from one of boron element and phosphorus element, and the second doping element is different from the first doping element.
  • the preparation process of the PN junction wafer is described by taking the upper silicon layer 51 of the SOI silicon wafer pre-doped with the impurity element phosphorus as an example.
  • photolithography is performed on the upper silicon layer 51 of the SOI silicon wafer to define the boron element doped region in the upper silicon layer 51 .
  • impurity boron is doped into the boron element doped region in the upper silicon layer 51 by means of photolithography, high temperature diffusion or ion implantation in sequence, so that the upper silicon layer 51 forms a PN junction structure, as shown in FIG. 5B .
  • the intermediate oxide layer can be etched away by an etching method, so that the upper silicon layer is peeled off from the lower silicon substrate, and the upper silicon layer obtained after peeling is a PN junction thin slice.
  • the intermediate oxide layer 52 can be etched with hydrofluoric acid by a wet etching method, and the upper silicon layer 51 and the lower silicon substrate 53 can be peeled off, and the upper silicon layer 51 is the PN junction sheet.
  • the PN junction sheet in this step can either refer to a single diode, then four PN junction sheets need to be made, or it can be formed by four diodes with fixed positions obtained according to the circuit structure design of the device layer. PN junction flakes.
  • the device layer is provided on the base layer, and the device layer has a specific circuit structure, it is necessary to pre-determine the corresponding conductive circuit area and diode area on the base layer according to the circuit structure of the device layer, wherein the diode area corresponds to the device layer.
  • the distribution position of the diodes in the circuit structure, and the conductive line area corresponds to the distribution position of the wires in the circuit structure of the device layer.
  • a PN junction sheet is transferred to the diode region on the base layer 100 , so that a PN junction layer 210 is formed on the base layer 100 .
  • a high-resolution mask method is used to form a conductive circuit layer 220 on the PN junction layer 210 by metal evaporation.
  • the conductive circuit layer 220 is evaporated using degradable metals such as magnesium, molybdenum, tungsten, iron, etc.
  • the metal in the area constitutes a degradable conductive path, and a degradable conductive path is formed in the wire circuit area on the base layer, wherein the metal evaporation method can be a method such as magnetron sputtering or electron beam evaporation.
  • steps S22 to S25 may be replaced with steps S221 to S261 (not shown in the figure).
  • a silicon-on-insulator membrane where the silicon-on-insulator membrane includes a lower silicon substrate, an intermediate oxide layer, and an upper silicon layer, the intermediate oxide layer is disposed on the lower silicon substrate, and the upper silicon layer is disposed on On the side of the intermediate oxide layer away from the lower silicon substrate, the upper silicon layer is pre-doped with a first doping element, and the first doping element is selected from one of boron element and phosphorus element.
  • the device layer includes PN junctions and conductive lines.
  • the PN junction region and the conductive line region are set on the upper silicon layer of the SOI silicon wafer, and then the PN junction region in the upper silicon layer of the SOI silicon wafer is doped with SOI by means of photolithography, high temperature diffusion or ion implantation.
  • the impurity element (acceptor impurity or donor impurity) of the opposite impurity type pre-doped in the upper silicon layer of the silicon wafer can make the PN junction region of the upper silicon layer of the SOI silicon wafer form a structure including four PN junctions.
  • the device layer by using a high-resolution mask method, magnetron sputtering or electron beam evaporation is used to form a conductive path through degradable metals such as magnesium, molybdenum, tungsten or iron in the conductive circuit area, thereby forming a rectifier bridge device structure. is the device layer.
  • degradable metals such as magnesium, molybdenum, tungsten or iron in the conductive circuit area, thereby forming a rectifier bridge device structure. is the device layer.
  • the intermediate oxide layer of the SOI silicon wafer is removed by an etching method, so that the upper silicon layer of the SOI silicon wafer is peeled off separately to obtain a device layer.
  • the PN junction layer 210 and the conductive circuit layer 220 constitute the device layer 200.
  • the prefabricated encapsulation layer 300 is covered on the device layer 200, so that the device layer 200 is located between the substrate layer 100 and the substrate layer 100. between the encapsulation layers 300 to form a complete degradable rectifier device, as shown in FIG. 1 .
  • the base layer and the encapsulation layer have a protective effect, so that the device layer is isolated from the outside world and is not affected by external impurities.
  • the degradable rectifier device In order to further prevent leakage and external impurities from entering the degradable rectifier device, it is also necessary to seal the gap between the base layer and the encapsulation layer, such as by hot-melt plastic sealing or applying material adhesive. degraded materials, etc. Since the base layer, the device layer and the encapsulation layer are all made of degradable materials, the formed degradable rectifier device is naturally fully degradable.
  • the encapsulation structure of the degradable rectifier device may also be an encapsulation shell, that is, the encapsulation layer 300 can be replaced by an encapsulation shell.
  • the device layer 200 is placed on the base layer 100 to form a semi-finished degradable device, and then the semi-finished degradable device is encapsulated as a whole through an encapsulation casing, so that the semi-finished degradable device is sealed around to form a sealed structure. If an encapsulation case is used for encapsulation, the encapsulation layer is not formed in step S21, and steps S26-S27 are replaced by the steps of forming an encapsulation case.
  • the manufacturing method of the degradable rectifier device makes the degradable rectifier device fully degradable, and it can convert the alternating current obtained by the implantable degradable triboelectric nanogenerator collected mechanical energy and converted in the living body into a direct current signal, This can further solve the key problem that degradable triboelectric nanogenerators cannot directly charge energy storage devices such as batteries or capacitors, and broaden the source of power for degradable implantable electronic medical devices.

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Abstract

一种可降解整流器件及其制作方法，所述可降解整流器件包括：基底层（100）、器件层（200）和封装层（300），所述器件层（200）设于所述基底层（100）之上，所述封装层（300）设于所述器件层（200）之上，所述基底层（100）、所述器件层（200）和所述封装层（300）的材料均为可降解材料。可降解整流器件具有全可降解性，它可以将植入式可降解摩擦纳米发电机在生物体内收集机械能转化得到的交流电转变为直流电信号，从而可以进一步解决可降解摩擦纳米发电机不能直接给电池或电容器等储能器件充电的关键问题，拓宽可降解植入式电子医疗设备的电源来源方式。

Description

可降解整流器件及其制作方法 技术领域
本发明实施例涉及电力电子技术领域，尤其涉及一种可降解整流器件及其制作方法。
 背景技术
当前，由于电子产品更新换代及破损等原因，每年在全球各地产生大量的电子垃圾。这些电子垃圾通常含有大量的有毒有害金属或非金属元素，采用传统的填埋及焚烧处理方法对其进行处理，会对水源、土地及空气等人类生存环境具有灾难性后果。因此开发低毒性、环境友好型、可再生、可降解的新型材料来替代目前电子产品部分元器件或制备具有完全零废物排放的新型电子设备是未来主流发展方向。
瞬态电子就是一种新兴的可降解的电子器件制备技术，它是指器件在完成指定功能后，其物理形态和功能可以在外界刺激触发下立即发生部分消失或者完全消失，因此，瞬态电子技术在植入式电子医疗设备方面具有良好的发展前景。植入式电子医疗设备电源的可持续通常需要外界电源对其进行充电来实现。而近年新发展的摩擦纳米发电机，是一种能够将环境机械能转换为电能输出的技术，但是其输出的电能为交流电，需要转化为直流电才能对植入式电子医疗设备进行充电。而目前的整流器件均为金属引线和塑料封装，整体尺寸较大且结构刚硬，不具备可降解性，不适用于可降解植入式电子医疗设备。
 技术问题
有鉴于此，本发明提供一种可降解整流器件及其制作方法，以实现整流器件的全可降解性。
 技术解决方案
第一方面，本发明提供一种可降解整流器件，包括基底层、器件层和封装层，所述器件层设于所述基底层之上，所述封装层设于所述器件层之上，所述基底层、所述器件层和所述封装层的材料均为可降解材料。
进一步的，所述基底层和所述封装层的材料包括具有生物相容性和生物可吸收性的高分子材料。
进一步的，所述基底层的厚度为10 μm-500 μm，和/或，所述封装层的厚度为10 μm-500 μm。
进一步的，所述器件层包括PN结层和导电线路层，所述PN结层设于所述基底层之上，所述导电线路层设于所述PN结层之上。
进一步的，所述器件层包括PN结和导电线路，所述PN结和所述导电线路均直接设于所述基底层上且形成整流桥结构。
第二方面，本发明提供一种可降解整流器件的制作方法，包括：
通过预设成膜法使预设可降解高分子材料形成基底层和封装层；
在所述基底层上形成具备可降解特性的器件层；
在所述器件层上覆盖所述封装层，形成可降解整流器件。
进一步的，所述预设成膜法包括流延成膜、旋转涂膜、浇铸成膜和熔融成膜中的一种。
进一步的，所述器件层包括PN结层和导电线路层，在所述基底层上形成具备可降解特性的器件层包括：
提供绝缘体上硅膜片，所述绝缘体上硅膜片包括下层硅基底、中间氧化层和上层硅层，所述中间氧化层设置在所述下层硅基底上，所述上层硅层设置在所述中间氧化层的远离所述下层硅基底的一侧，所述上层硅层预先掺杂有第一掺杂元素，所述第一掺杂元素选自硼元素和磷元素中的一种；
对所述上层硅层依次进行光刻处理和掺杂处理，以在所述上层硅层中掺杂入第二掺杂元素，所述第二掺杂元素选自硼元素和磷元素中的一种，且所述第二掺杂元素与所述第一掺杂元素不同；
去除所述中间氧化层和所述下层硅基底，得到PN结薄片；
将所述PN结薄片转印至所述基底层，形成PN结层，并在所述PN结层上形成导电线路层。
进一步的，在所述基底层上形成具备可降解特性的器件层包括：
提供绝缘体上硅膜片，所述绝缘体上硅膜片包括下层硅基底、中间氧化层和上层硅层，所述中间氧化层设置在所述下层硅基底上，所述上层硅层设置在所述中间氧化层的远离所述下层硅基底的一侧，所述上层硅层预先掺杂有第一掺杂元素，所述第一掺杂元素选自硼元素和磷元素中的一种；
在所述上层硅层上定义PN结区域和导电线路区域；
对所述上层硅层依次进行光刻处理和掺杂处理，以在所述PN结区域的上层硅层中掺杂入第二掺杂元素，所述第二掺杂元素选自硼元素和磷元素中的一种，且所述第二掺杂元素与所述第一掺杂元素不同，得到形成有PN结的第二硅片；
在所述形成有PN结的第二硅片的所述导电线路区域形成导电线路，然后去除所述中间氧化层和所述下层硅基底，得到器件层；
将所述器件层转印至所述基底层。
进一步的，在所述器件层上覆盖所述封装层，形成可降解整流器件包括：
在所述导电线路层上覆盖所述封装层；
对所述基底层与所述封装层的空隙位置进行密封，形成可降解整流器件。
 有益效果
本发明实施例提供的可降解整流器件由基底层、器件层和封装层组成，由于基底层、器件层和封装层均采用可降解材料制成，使得可降解整流器件具有全可降解性，它可以将植入式可降解摩擦纳米发电机在生物体内收集机械能转化得到的交流电转变为直流电信号，从而可以进一步解决可降解摩擦纳米发电机不能直接给电池或电容器等储能器件充电的关键问题，拓宽可降解植入式电子医疗设备的电源来源方式。
 附图说明
图1为本发明实施例一提供的一种可降解整流器件的结构示意图；
图2为本发明实施例一提供的可降解整流器件的电路图；
图3为本发明实施例二提供的一种可降解整流器件的制作方法的流程示意图；
图4为本发明实施例三提供的一种可降解整流器件的制作方法的流程示意图；
图5A为本发明实施例三提供的SOI硅片的结构示意图；
图5B为本发明实施例三提供的形成PN结的SOI硅片的结构示意图；
图5C为本发明实施例三提供的PN结薄片的结构示意图。
 本发明的实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部结构。
实施例一
图1为本发明实施例一提供的一种可降解整流器件的结构示意图，本发明实施例提供的可降解整流器件可作为可降解植入式电子医疗设备的整流元器件使用，且可以通过本发明任意实施例提供的可降解整流器件的制作方法制备，本实施例中未详尽描述的内容，也可以参考本发明任意方法实施例的描述。
如图1所示，本发明实施例提供的可降解整流器件包括：基底层100、器件层200和封装层300，基底层100位于最下方，器件层200位于基底层100之上，封装层300位于器件层200之上，基底层100、器件层200和封装层300的材料均采用可降解材料制成。
基底层100和封装层300的材料均采用具有良好生物相容性和生物可吸收性的高分子材料制成，包括人工合成高分子材料和天然来源高分子材料，例如，胶原、明胶、大豆蛋白、蛋清、丝素蛋白、海藻酸钠、纤维素、木质素、甲壳素、壳聚糖、透明质酸、聚己内酯、聚乳酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇、微生物聚酯、聚对二氧环己酮、聚酸酐等。基底层100和封装层300均可采用上述材料中的一种或多种制成，且二者可以采用相同的材料，也可以采用不同的材料。基底层100和封装层300的厚度均在10 μm-500 μm之间（包括两个端点），二者的厚度可以相同，也可以不同。
器件层200包括PN结层210和导电线路层220，PN结层210设于基底层100之上，导电线路层220设于PN结层210之上。PN结层210以SOI（Silicon on Insulator，绝缘体上硅）硅片为原材料制成，SOI硅片由上层硅层、中间氧化层和下层硅基底三部分组成，SOI硅片的上层硅层中预先掺杂了施主杂质或受主杂质，依次通过光刻和高温扩散或离子注入的方式在SOI硅片的上层硅层中掺杂与SOI硅片的上层硅层中预先掺杂的杂质类型相反的杂质元素（受主杂质或施主杂质），即可使SOI硅片的上层硅层形成PN结，例如，SOI硅片的上层硅层中预先掺杂了施主杂质磷，那么SOI硅片的上层硅层形成N型半导体，通过高温扩散或离子注入的方式在SOI硅片的上层硅层中掺杂受主杂质硼，从而使SOI硅片的上层硅层形成PN结结构。SOI硅片的上层硅层形成PN结结构之后，再通过刻蚀去除SOI硅片的中间氧化层，从而使SOI硅片的上层硅层单独剥离出来，得到PN结层210。
可选的，在可替代实施例中，器件层200包括PN结和导电线路，为单层结构。首先在SOI硅片的上层硅层上设置好PN结区域和导电线路区域，然后依次通过光刻和高温扩散或离子注入的方式在SOI硅片的上层硅层中的PN结区域掺杂与SOI硅片的上层硅层中预先掺杂的杂质类型相反的杂质元素（受主杂质或施主杂质），即可使SOI硅片的上层硅层的PN结区域形成包括4个PN结的结构。接着通过使用高分辨掩膜版法，采用磁控溅射或电子束蒸镀等方式在导电线路区域通过镁、钼、钨或铁等可降解金属形成导电通路，从而形成整流桥器件结构，也就是器件层200。最后通过刻蚀方法将去除SOI硅片的中间氧化层，从而使SOI硅片的上层硅层单独剥离出来，得到器件层200。
器件层200通过PN结层210和导电线路层220形成桥式整流电路，电路图如图2所示，交流电从输入端230输入，经过二极管（即PN结）的整流，从输出端240输出直流电，从而完成交流电到直流电的转变。将PN结薄片转印至基底层100上，然后使用高分辨掩膜版法，通过金属蒸镀的方式在PN结层210形成导电线路层220，将一个或多个PN结连接成整流电路，本实施例的导电线路层220可以采用如镁、钼、钨、铁等的可降解金属进行蒸镀，导电线路区域的金属便构成了可降解导电通路，即，在基底层100上的导线线路区域形成可降解导电通路，其中，金属蒸镀方法可以是磁控溅射或电子束蒸镀等方法。
器件层200位于基底层100和封装层300之间，是可降解整流器件的主要工作部分，为了防止漏电以及外界杂质进入可降解整流器件内部，基底层100和封装层300之间还通过密封材料密封，密封材料如可降解的材料粘结剂等。
可选的，在可替代实施例中，可降解整流器件的封装结构除了是封装层300之外，也可以是封装罩壳，即封装层300可用封装罩壳替代。将器件层200置于基底层100上之后形成可降解器件半成品，再通过封装罩壳对可降解器件半成品进行整体封装，使可降解器件半成品四周都密封起来，形成密封结构。
本发明实施例提供的可降解整流器件由基底层、器件层和封装层组成，由于基底层、器件层和封装层均采用可降解材料制成，使得可降解整流器件具有全可降解性，它可以将植入式可降解摩擦纳米发电机在生物体内收集机械能转化得到的交流电转变为直流电信号，从而可以进一步解决可降解摩擦纳米发电机不能直接给电池或电容器等储能器件充电的关键问题，拓宽可降解植入式电子医疗设备的电源来源方式。
实施例二
图3为本发明实施例二提供的一种可降解整流器件的制作方法的流程示意图，本发明实施例提供的可降解整流器件的制作方法可用于制作具备全可降解性能的整流器件，即可用于制备本发明任意实施例提供的可降解整流器件，本实施例中未详尽描述的内容，也可以参考本发明任意可降解整流器件实施例的描述。
如图3所示，本发明实施例提供的可降解整流器件的制作方法包括：
S11、通过预设成膜法使预设可降解高分子材料形成基底层和封装层。
具体的，可降解高分子材料是指具有良好生物相容性和生物可吸收性的高分子材料制成，包括人工合成高分子材料和天然来源高分子材料，例如，胶原、明胶、大豆蛋白、蛋清、丝素蛋白、海藻酸钠、纤维素、木质素、甲壳素、壳聚糖、透明质酸、聚己内酯、聚乳酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇、微生物聚酯、聚对二氧环己酮、聚酸酐等。
预设成膜法包括流延成膜、旋转涂膜、浇铸成膜和熔融成膜中的一种。流延成膜是通过熔体流涎骤冷生成一种无拉伸、非定向的平挤薄膜。旋转涂膜是通过高速旋转材料使其形成均匀薄膜。浇铸成膜是指使用浇铸模头将溶液浇铸在载体上，浇铸溶液以聚合物膜的形式从载体上剥离，干燥处理后缠绕成为聚合物膜。熔融成膜是指高聚物熔体挤出，在拉伸应力下结晶，形成垂直于挤出方向而又平行排列的薄膜结构。
通过预设成膜法，使可降解高分子材料形成薄膜，形成的薄膜可作为基底层或封装层。基底层和封装层可以采用相同的材料，也可以采用不同的材料。且基底层或封装层的厚度均在10 μm-500 μm之间（包括两个端点），基底层厚度和封装层厚度可以相同，也可以不同。优选的，基底层和封装层采用相同的材料和相同的厚度，这样在制备的过程中可以一次性制备，即使分次制备，也不需要调整设备参数，更加方便。
S12、在所述基底层上形成具备可降解特性的器件层。
具体的，器件层是可降解整流器件的主要工作部分，设于基底层上，采用可降解材料制成，其电路结构为桥式整流电路，参考图2。根据图2所示的电路图，可知器件层主要由PN结层和导电线路层组成，在基底层上依次形成PN结层和导电线路层，便形成了器件层，其中，PN结层可以SOI硅片为原材料制成，导电线路层采用可降解金属制成。
S13、在所述器件层上覆盖所述封装层，形成可降解整流器件。
具体的，在基底层上形成器件层之后，在器件层上覆盖预先制好的封装层，使器件层位于基底层和封装层之间，从而形成完整的可降解整流器件。基底层和封装层具有防护作用，使器件层与外界隔离，不受外界杂质的影响。由于基底层、器件层和封装层均采用可降解材料制成，形成的可降解整流器件自然具有全可降解性。
可选的，在可替代实施例中，可降解整流器件的封装结构除了是封装层300之外，也可以是封装罩壳，即封装层300可用封装罩壳替代。将器件层200置于基底层100上之后形成可降解器件半成品，再通过封装罩壳对可降解器件半成品进行整体封装，使可降解器件半成品四周都密封起来，形成密封结构。若使用封装罩壳进行封装，那么在步骤S11中不形成封装层，封装罩壳在步骤S13中形成。
本发明实施例提供的可降解整流器件的制作方法使得可降解整流器件具有全可降解性，它可以将植入式可降解摩擦纳米发电机在生物体内收集机械能转化得到的交流电转变为直流电信号，从而可以进一步解决可降解摩擦纳米发电机不能直接给电池或电容器等储能器件充电的关键问题，拓宽可降解植入式电子医疗设备的电源来源方式。
实施例三
图4为本发明实施例三提供的一种可降解整流器件的制作方法的流程示意图，本实施例是对上述实施例的进一步细化。
如图4所示，本发明实施例三提供的可降解整流器件的制作方法包括：
S21、通过预设成膜法使预设可降解高分子材料形成基底层和封装层。
S22、提供绝缘体上硅膜片，所述绝缘体上硅膜片包括下层硅基底、中间氧化层和上层硅层。具体的，绝缘体上硅膜片即SOI硅片，其包括下层硅基底、中间氧化层和上层硅层，中间氧化层设置在下层硅基底上，上层硅层设置在中间氧化层的远离下层硅基底的一侧，上层硅层预先掺杂有第一掺杂元素，第一掺杂元素选自硼元素和磷元素中的一种。
示例性的，如图5A所述，SOI硅片包括上层硅层51、中间氧化层52和下层硅基底53，其中，SOI硅片的上层硅层51中预先掺杂了施主杂质或受主杂质，即，SOI硅片的上层硅层51为N型半导体或P型半导体，当SOI硅片的上层硅层51中预先掺杂了施主杂质，如磷，SOI硅片的上层硅层51为N型半导体，当SOI硅片的上层硅层51中预先掺杂了施主杂质，如硼，SOI硅片的上层硅层51为P型半导体。
S23、对所述上层硅层依次进行光刻处理和掺杂处理，以在所述上层硅层中掺杂入第二掺杂元素。
具体的，第二掺杂元素选自硼元素和磷元素中的一种，且第二掺杂元素与第一掺杂元素不同。示例性的，以SOI硅片的上层硅层51预先掺杂了杂质元素磷为例说明PN结薄片的制备过程。
先对SOI硅片的上层硅层51进行光刻处理，定义上层硅层51中的硼元素掺杂区域。然后依次通过光刻和高温扩散或离子注入的方式在上层硅层51中的硼元素掺杂区域掺入杂质硼，那么上层硅层51便形成了PN结结构，如图5B所示。
S24、去除所述中间氧化层和所述下层硅基底，得到PN结薄片。
具体的，可通过刻蚀方法将中间氧化层刻蚀掉，使得上层硅层与下层硅基底剥离开来，剥离后得到的上层硅层便是PN结薄片。示例性的，参考图5C，可通过湿法刻蚀方法，利用氢氟酸将中间氧化层52刻蚀，将上层硅层51和下层硅基底53剥离，上层硅层51便是PN结薄片。
进一步的，本步骤中的PN结薄片，既可以是指单个的二极管，那么需要制作四个PN结薄片，也可以是根据器件层的电路结构设计而得到的位置固定好的四个二极管形成的PN结薄片。
S25、将所述PN结薄片转印至所述基底层，形成PN结层，并在所述PN结层上形成导电线路层。
具体的，由于器件层设于基底层上，器件层具有具体的电路结构，故需要根据器件层的电路结构预先在基底层上确定对应的导电线路区域和二极管区域，其中，二极管区域对应器件层电路结构中二极管的分布位置，导电线路区域对应器件层电路结构中导线的分布位置。
示例性的，参考图1，将PN结薄片转印至基底层100上的二极管区域，使基底层100上形成PN结层210。然后使用高分辨掩膜版法，通过金属蒸镀的方式在PN结层210形成导电线路层220，导电线路层220采用如镁、钼、钨、铁等的可降解金属进行蒸镀，导线线路区域的金属便构成了可降解导电通路，在基底层上的导线线路区域形成可降解导电通路，其中，金属蒸镀方法可以是磁控溅射或电子束蒸镀等方法。
可选的，在可替代实施例中，步骤S22~S25可以替换为步骤S221~S261（图中未示出）。
S221、提供绝缘体上硅膜片，所述绝缘体上硅膜片包括下层硅基底、中间氧化层和上层硅层，所述中间氧化层设置在所述下层硅基底上，所述上层硅层设置在所述中间氧化层的远离所述下层硅基底的一侧，所述上层硅层预先掺杂有第一掺杂元素，所述第一掺杂元素选自硼元素和磷元素中的一种。
S231、在所述上层硅层上定义PN结区域和导电线路区域。
S241、对所述上层硅层依次进行光刻处理和掺杂处理，以在所述PN结区域的上层硅层中掺杂入第二掺杂元素，所述第二掺杂元素选自硼元素和磷元素中的一种，且所述第二掺杂元素与所述第一掺杂元素不同，得到形成有PN结的第二硅片。
S251、在所述形成有PN结的第二硅片的所述导电线路区域形成导电线路，然后去除所述中间氧化层和所述下层硅基底，得到器件层。
S261、将所述器件层转印至所述基底层。
具体的，器件层包括PN结和导电线路。首先在SOI硅片的上层硅层上设置好PN结区域和导电线路区域，然后依次通过光刻和高温扩散或离子注入的方式在SOI硅片的上层硅层中的PN结区域掺杂与SOI硅片的上层硅层中预先掺杂的杂质类型相反的杂质元素（受主杂质或施主杂质），即可使SOI硅片的上层硅层的PN结区域形成包括4个PN结的结构。接着通过使用高分辨掩膜版法，采用磁控溅射或电子束蒸镀等方式在导电线路区域通过镁、钼、钨或铁等可降解金属形成导电通路，从而形成整流桥器件结构，也就是器件层。最后通过刻蚀方法将去除SOI硅片的中间氧化层，从而使SOI硅片的上层硅层单独剥离出来，得到器件层。
S26、在所述导电线路层上覆盖所述封装层。
S27、对所述基底层与所述封装层的空隙位置进行密封，形成可降解整流器件。
具体的，PN结层210和导电线路层220构成器件层200，在基底100上形成器件层200之后，在器件层200上覆盖预先制好的封装层300，使器件层200位于基底层100和封装层300之间，从而形成完整的可降解整流器件，如图1所示。基底层和封装层具有防护作用，使器件层与外界隔离，不受外界杂质的影响。为了进一步防止漏电以及外界杂质进入可降解整流器件内部，还需要对基底层和封装层之间的空隙位置进行密封，如通过热熔塑封或涂抹材料粘结剂等方式进行密封，密封材料选用可降解的材料等。由于基底层、器件层和封装层均采用可降解材料制成，形成的可降解整流器件自然具有全可降解性。
可选的，在可替代实施例中，可降解整流器件的封装结构除了是封装层300之外，也可以是封装罩壳，即封装层300可用封装罩壳替代。将器件层200置于基底层100上之后形成可降解器件半成品，再通过封装罩壳对可降解器件半成品进行整体封装，使可降解器件半成品四周都密封起来，形成密封结构。若使用封装罩壳进行封装，那么在步骤S21中不形成封装层，步骤S26-S27由形成封装罩壳的步骤替代。
本发明实施例提供的可降解整流器件的制作方法使得可降解整流器件具有全可降解性，它可以将植入式可降解摩擦纳米发电机在生物体内收集机械能转化得到的交流电转变为直流电信号，从而可以进一步解决可降解摩擦纳米发电机不能直接给电池或电容器等储能器件充电的关键问题，拓宽可降解植入式电子医疗设备的电源来源方式。
注意，上述仅为本发明的较佳实施例及所运用技术原理。本领域技术人员会理解，本发明不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化，重新调整和替代而不会脱离本发明的保护范围。因此，虽然通过以上实施例对本发明进行了较为详细的说明，但是本发明不仅仅限于以上实施例，在不脱离本发明构思的情况下，还可以包括更多其他等效实施例，而本发明的范围由所附的权利要求范围决定。

Claims (10)

  1. 一种可降解整流器件，其特征在于，包括基底层、器件层和封装层，所述器件层设于所述基底层之上，所述封装层设于所述器件层之上，所述基底层、所述器件层和所述封装层的材料均为可降解材料。
  2. 如权利要求1所述的可降解整流器件，其特征在于，所述基底层和所述封装层的材料包括具有生物相容性和生物可吸收性的高分子材料。
  3. 如权利要求1所述的可降解整流器件，其特征在于，所述基底层的厚度为10 μm-500 μm，和/或，所述封装层的厚度为10 μm-500 μm。
  4. 如权利要求1所述的可降解整流器件，其特征在于，所述器件层包括PN结层和导电线路层，所述PN结层设于所述基底层之上，所述导电线路层设于所述PN结层之上。
  5. 如权利要求1所述的可降解整流器件，其特征在于，所述器件层包括PN结和导电线路，所述PN结和所述导电线路均直接设于所述基底层上且形成整流桥结构。
  6. 一种可降解整流器件的制作方法，其特征在于，包括：
    通过预设成膜法使预设可降解高分子材料形成基底层和封装层；
    在所述基底层上形成具备可降解特性的器件层；
    在所述器件层上覆盖所述封装层，形成可降解整流器件。
  7. 如权利要求6所述的方法，其特征在于，所述预设成膜法包括流延成膜、旋转涂膜、浇铸成膜和熔融成膜中的一种。
  8. 如权利要求6或7所述的方法，其特征在于，所述器件层包括PN结层和导电线路层，在所述基底层上形成具备可降解特性的器件层包括：
    提供绝缘体上硅膜片，所述绝缘体上硅膜片包括下层硅基底、中间氧化层和上层硅层，所述中间氧化层设置在所述下层硅基底上，所述上层硅层设置在所述中间氧化层的远离所述下层硅基底的一侧，所述上层硅层预先掺杂有第一掺杂元素，所述第一掺杂元素选自硼元素和磷元素中的一种；
    对所述上层硅层依次进行光刻处理和掺杂处理，以在所述上层硅层中掺杂入第二掺杂元素，所述第二掺杂元素选自硼元素和磷元素中的一种，且所述第二掺杂元素与所述第一掺杂元素不同；
    去除所述中间氧化层和所述下层硅基底，得到PN结薄片；
    将所述PN结薄片转印至所述基底层，形成PN结层，并在所述PN结层上形成导电线路层。
  9. 如权利要求6或7所述的方法，其特征在于，在所述基底层上形成具备可降解特性的器件层包括：
    提供绝缘体上硅膜片，所述绝缘体上硅膜片包括下层硅基底、中间氧化层和上层硅层，所述中间氧化层设置在所述下层硅基底上，所述上层硅层设置在所述中间氧化层的远离所述下层硅基底的一侧，所述上层硅层预先掺杂有第一掺杂元素，所述第一掺杂元素选自硼元素和磷元素中的一种；
    在所述上层硅层上定义PN结区域和导电线路区域；
    对所述上层硅层依次进行光刻处理和掺杂处理，以在所述PN结区域的上层硅层中掺杂入第二掺杂元素，所述第二掺杂元素选自硼元素和磷元素中的一种，且所述第二掺杂元素与所述第一掺杂元素不同，得到形成有PN结的第二硅片；
    在所述形成有PN结的第二硅片的所述导电线路区域形成导电线路，然后去除所述中间氧化层和所述下层硅基底，得到器件层；
    将所述器件层转印至所述基底层。
  10. 如权利要求9所述的方法，其特征在于，在所述器件层上覆盖所述封装层，形成可降解整流器件包括：
    在所述导电线路层上覆盖所述封装层；
    对所述基底层与所述封装层的空隙位置进行密封，形成可降解整流器件。
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