WO2021258616A1 - 偏振无关的光开关 - Google Patents

偏振无关的光开关 Download PDF

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Publication number
WO2021258616A1
WO2021258616A1 PCT/CN2020/128192 CN2020128192W WO2021258616A1 WO 2021258616 A1 WO2021258616 A1 WO 2021258616A1 CN 2020128192 W CN2020128192 W CN 2020128192W WO 2021258616 A1 WO2021258616 A1 WO 2021258616A1
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Prior art keywords
polarization
waveguide layer
lithium niobate
layer
silicon nitride
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PCT/CN2020/128192
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English (en)
French (fr)
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曹伟杰
储涛
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浙江大学
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G02F1/0316—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on electro-optical organic material
    • G02F1/065—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on electro-optical organic material in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure the optical waveguides being made of semiconducting material

Definitions

  • the present invention relates to the field of semiconductor technology, in particular to a polarization-independent optical switch.
  • the present invention aims to solve one of the technical problems in the related art at least to a certain extent.
  • the purpose of the present invention is to provide a polarization-independent optical switch, which solves the technical problem of polarization-independent characteristics that are difficult to achieve with silicon waveguides or other materials, and at the same time solves the technical problem of introducing large additional losses during electro-optical modulation. .
  • an embodiment of the present invention proposes a polarization-independent optical switch.
  • the optical switch has a left-right symmetric structure and includes:
  • a lower cladding layer, a lithium niobate waveguide layer, an upper cladding layer and a silicon nitride waveguide layer the lithium niobate waveguide layer is integrated above the lower cladding layer, and the silicon nitride waveguide layer is on the lithium niobate waveguide Above the layer, the upper cladding layer is filled between the lithium niobate waveguide layer and the silicon nitride waveguide layer;
  • the upper half of the uniform splitting multimode interference coupler and the upper and lower interlayer coupling structure are etched in sequence along the light propagation direction on the silicon nitride waveguide layer, and the upper half is connected to the uniform splitting multimode interference coupler.
  • Metal electrodes are fabricated on both sides of the polarization-independent modulation waveguide of the lithium niobate waveguide layer, and the positions of the metal electrodes are adjusted according to the modulation characteristics of the lithium niobate waveguide layer.
  • the polarization-independent optical switch in the embodiment of the present invention provides a new type of optical switch in which a silicon nitride material and a lithium niobate material are heterogeneously integrated.
  • the lithium niobate wafer on the insulator is used to etch the modulation arm of the optical switch.
  • Waveguide grow a layer of silicon nitride film on lithium niobate, and etch to form basic passive devices such as multimode interference couplers.
  • the optical switch structure uses silicon nitride material to realize the polarization independence of the basic passive device, and at the same time uses the electro-optical characteristics of lithium niobate material to realize low-loss and high-speed modulation characteristics.
  • the polarization-independent optical switch according to the foregoing embodiment of the present invention may also have the following additional technical features:
  • a hole is opened above the metal electrode, which is exposed to air.
  • light is input from one port of the uniform light splitting multimode interference coupler, and is coupled to the polarization-independent modulation waveguide through the upper and lower interlayer coupling structure, and the light is at the metal electrode Applying an external voltage to change the optical phase to change the optical path, and then pass through the upper and lower interlayer coupling structure, and output from one port of the uniform light splitting multimode interference coupler.
  • the upper cladding layer and the lower cladding layer are made of silicon dioxide material.
  • the silicon nitride waveguide layer has a structure with a gradually narrowing width.
  • the length of the gradually narrowing structure of the silicon nitride waveguide layer and the interlayer spacing between the lithium niobate waveguide layer and the silicon nitride waveguide layer are changed to make Transverse electric mode and transverse magnetic mode are coupled with low loss.
  • the uniform light splitting multimode interference coupler is a polarization-independent 2 ⁇ 2 uniform light splitting multimode interference coupler, which includes 4 input and output curved waveguides and an intermediate multimode waveguide.
  • the distribution of electric field lines in the waveguide is changed so that the transverse electric mode and the transverse magnetic Modulation efficiency of the two modes is the same.
  • Fig. 1 is a schematic structural diagram of a polarization-independent optical switch according to an embodiment of the present invention
  • FIG. 2 is a diagram of a simulation result of a single-mode condition of a silicon nitride material according to an embodiment of the present invention
  • Fig. 3 is a top view of a silicon nitride waveguide layer in an optical switch according to an embodiment of the present invention
  • FIG. 4 is a schematic cross-sectional view of a lithium niobate waveguide layer in an optical switch according to an embodiment of the present invention.
  • optical switches are mainly used in large-scale data exchange centers and supercomputers.
  • optical switches are required to have characteristics such as large bandwidth, low loss and independence of polarization.
  • the switching speed of the optical switch needs to reach the nanosecond level to avoid data packet loss. Therefore, it is the current optical fiber to achieve large bandwidth, low loss, and high switching speed at the same time. The problem that the switch needs to solve urgently.
  • Optical switches can be divided into wavelength routing switching and path switching according to their working principles. Wavelength routing achieves optical path switching by changing the carrier wavelength. Although its communication bandwidth is narrow and the channel data carrying capacity is limited, its principle is simple and easy to implement. The data communication capacity can be increased by adding channels, so the current practical application is still Wavelength routing is dominant.
  • Path switching arrays can be divided into spatial type and waveguide type.
  • the spatial type is mainly based on MEMS (Micro-Electro-Mechanical System). Due to its low cost, it is currently very popular in commercial applications.
  • the waveguide type can be divided into different material types such as silicon dioxide, silicon, three-five-five materials, and has superior performance compared with the former two, but it is still in the research stage.
  • Silicon-based photonics is an emerging discipline based on silicon and silicon-based substrate materials, using the current advanced complementary metal oxide (CMOS) technology for optical device development and integration, and has been extensively studied. Therefore, the current waveguide type optical switches are mainly silicon materials, and a few use new materials such as lithium niobate and new phase change materials.
  • the former utilizes the silicon-based plasma dispersion effect to form a PIN structure through process ion implantation in the form of a ridge waveguide to achieve a switching speed of nanoseconds.
  • the latter uses the electro-optical effect of the material, and can also achieve nanosecond or even faster switching speeds.
  • optical switches are usually required to have characteristics such as large bandwidth, polarization independence, low loss, and high switching speed.
  • the existing optical switches have the following shortcomings:
  • phase change materials In addition to the silicon-based plasma dispersion effect, it is common to use phase change materials to achieve high-speed optical switches, but there are also problems of high loss, polarization correlation and difficult heterogeneous integration.
  • the embodiment of the present invention proposes a polarization-independent optical switch structure, which can achieve low loss and high switching speed.
  • the heterogeneous integration of silicon nitride material and lithium niobate material solves the technical problem of polarization-independent characteristics that are difficult to achieve in silicon waveguides or other materials, and at the same time solves the technical problem of introducing large additional losses during electro-optical modulation.
  • Fig. 1 is a schematic structural diagram of a polarization-independent optical switch according to an embodiment of the present invention.
  • the polarization-independent optical switch has a left-right symmetrical structure.
  • the polarization-independent optical switch includes a lower cladding layer 1, a lithium niobate waveguide layer 2, an upper cladding layer (not shown in the figure), and a silicon nitride waveguide layer 3.
  • the lower cladding layer 1 is the bottom layer, the lithium niobate waveguide layer 2 is arranged above the lower cladding layer 1, the silicon nitride waveguide layer 3 is arranged above the lithium niobate waveguide layer 2, and the upper cladding layer is arranged on the lithium niobate Between the waveguide layer 2 and the silicon nitride waveguide layer 3.
  • both the upper cladding layer and the lower cladding layer are made of silica material.
  • the terms “silicon nitride layer” and “silicon nitride waveguide layer” can be used interchangeably.
  • first uniform light splitting multimode interference coupler 4 (MMI, Multimode Interference), a first upper and lower layer coupling structure 5, and a polarization-independent modulation waveguide 6.
  • MMI Multimode Interference
  • the first uniform splitting multimode interference coupler MMI may be arranged in the silicon nitride waveguide layer 3.
  • the first uniform splitting multimode interference coupler MMI may be a polarization-independent 2 ⁇ 2 uniform splitting multimode interference coupler (for example, it includes 4 input and output terminals).
  • the polarization-independent 2 ⁇ 2 uniform light splitting multimode interference coupler can be coupled to the curved waveguide, so that the light enters the multimode waveguide from the curved waveguide and decomposes into multiple different modes, and the different modes are affected by the phase relationship. Interference, the light after interference is output from the two output ends of the multimode waveguide.
  • the first uniform light splitting multimode interference coupler MMI can be arranged in the silicon nitride waveguide layer 3 by etching.
  • the upper half of the first upper and lower interlayer coupling structure 5 may be arranged in the silicon nitride waveguide layer 3 and the lower half may be arranged in the lithium niobate waveguide layer 2.
  • the upper part is connected to the output of the first uniform light splitting multimode interference coupler 4 (2 ⁇ 2MMI), and the lower part is connected to the polarization-independent modulation waveguide 6.
  • the upper half can be formed in the silicon nitride waveguide layer 3 and the lower half can be formed in the lithium niobate waveguide layer 2 through an etching process.
  • the polarization-independent modulation waveguide 6 and the metal electrode 7 are arranged in the lithium niobate waveguide layer 2.
  • Metal electrodes 7 are arranged on both sides of the polarization-independent modulation waveguide 6.
  • the metal electrodes 7 are placed on both sides of the polarization-independent modulation waveguide 6 and directly contact the lithium niobate waveguide layers 2 on both sides of the polarization-independent modulation waveguide 6.
  • a silica cladding layer is grown on the lithium niobate waveguide 2 so that the silica cladding layer covers the polarization-independent modulation waveguide 2 and the metal electrode 7. Therefore, the polarization-independent modulation waveguide 6 and the metal electrode 7 are not in direct contact with the air.
  • the relative position of the metal electrode 7 relative to the polarization-independent modulation waveguide 6 in the horizontal direction (ie, the yz plane shown in FIG. 1) can be adjusted according to the modulation characteristics of the lithium niobate waveguide layer 2. Therefore, the distribution of electric field lines in the polarization-independent modulation waveguide 6 is changed, so that the modulation efficiency of the transverse electric mode and the transverse magnetic mode are the same, and polarization-independent.
  • the above-mentioned polarization-independent optical switch has a symmetrical structure. Therefore, the structure and arrangement of the second uniform splitting multimode interference coupler 9 and the second upper and lower interlayer coupling structure 8 are respectively the same as those of the first uniform splitting multimode interference coupler 4 and The structure and arrangement of the first upper and lower layer coupling structure 5 are the same.
  • the polarization-independent passive device is designed and manufactured by silicon nitride material, which reduces the difficulty of the device process. Utilizing the anisotropic characteristics of lithium niobate material and its electro-optical characteristics, the function of low loss and high switching speed is realized. Based on a passive device made of a silicon nitride material that is independent of polarization and a modulation arm made of a lithium niobate material with polarization-independent modulation efficiency, polarization independence is achieved. Therefore, the switch structure of the embodiment of the present invention can be variously changed, for example, a microring resonator or MZI (Mach-Zehnder interferometer) can be formed.
  • MZI Machine-Zehnder interferometer
  • light is input from one of the input ports of the first uniform light splitting multimode interference coupler 4, and is coupled to the polarization-independent modulation waveguide 6 through the first upper and lower interlayer coupling structure 5, and passes through the metal electrode 7 A voltage is applied to change the light phase to change the optical path, and finally the light is output from one of the ports of the second uniform light splitting multimode interference coupler 9.
  • FIG. 2 is a schematic diagram of a simulation result of a single mode condition of a silicon nitride waveguide layer, in which the height of the silicon nitride waveguide layer is 900 nm.
  • the simulation results of four groups of modes including the silicon nitride waveguide layer where TE represents the transverse electric mode (electric field is only polarized in the lateral direction), and TM represents the transverse magnetic mode (the magnetic field is only polarized in the lateral direction).
  • the effective refractive index changes of the four groups of modes of the silicon nitride waveguide are obtained, and polarization independence is achieved at the intersection of the effective refractive index curves of the TE mode and the TM mode.
  • the abscissa represents the width of the silicon nitride waveguide layer
  • the ordinate represents the effective refractive index of the silicon nitride waveguide layer.
  • Fig. 3 shows a top view of a polarization-independent optical switch according to an embodiment of the present application.
  • Si3N4taper represents the silicon nitride waveguide layer 3
  • LN Waveguide represents the lithium niobate waveguide layer 2.
  • the silicon nitride waveguide layer 3 is arranged above the lithium niobate waveguide layer 2.
  • the silicon nitride waveguide layer above the lithium niobate waveguide layer 2 designed in the embodiment of the present invention has a structure with a gradual width, for example, the width gradually narrows (taper). When the light propagates in the silicon nitride waveguide, it gradually diverges and couples with the lithium niobate waveguide.
  • the light is gradually coupled from the silicon nitride waveguide to the lithium niobate waveguide, which is reversible according to the optical path and has the same reverse propagation characteristics.
  • the embodiment of the present invention can achieve low transverse electric mode (TE) and transverse magnetic mode (TM) by designing a reasonable taper length of the silicon nitride waveguide layer and the interlayer spacing between the lithium niobate waveguide layer and the silicon nitride waveguide layer. Loss coupling. Because the process of changing the shape of the lithium niobate waveguide layer is difficult, the embodiment of the present invention only makes a large width change on the silicon nitride waveguide layer to minimize the change in the width of the lithium niobate waveguide layer.
  • n e is the lithium niobate z-direction refractive index.
  • the embodiment of the present invention changes the distribution of the electric field lines in the waveguide by arranging the metal electrode at an appropriate position, so that the modulation efficiency of the TE and TM modes are the same, and polarization is independent.
  • the electric field directly acts on the lithium niobate material.
  • the refractive index of the lithium niobate material changes, no additional light absorption loss is introduced, and it has an extremely fast response speed.
  • the bandwidth of lithium niobate material is at least 70GHz, and its index level is much higher than the nanosecond switching speed in the current data packet communication method.
  • the polarization-independent optical switch proposed according to the embodiment of the present invention provides a new type of optical switch in which a silicon nitride material and a lithium niobate material are heterogeneously integrated.
  • a lithium niobate wafer on an insulator is used to etch to form an optical switch modulation arm
  • a layer of silicon nitride film is grown on lithium niobate and etched to form basic passive devices such as multimode interference couplers.
  • the optical switch structure includes a passive device made of a polarization-independent silicon nitride material, and a modulation arm made of a lithium niobate material with polarization-independent modulation efficiency, thereby using silicon nitride and lithium niobate materials to achieve a basic passive
  • the polarization of the device is independent, and the electro-optical characteristics of lithium niobate materials are used to achieve low-loss and high-speed modulation characteristics.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include at least one of the features. In the description of the present invention, "a plurality of” means at least two, such as two, three, etc., unless otherwise specifically defined.

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Abstract

一种偏振无关的光开关及其制作方法。光开关为左右对称结构，包括：下包层（1）、铌酸锂波导层（2）、上包层和氮化硅层（3），铌酸锂波导层（2）集成在下包层（1）上方，氮化硅层（3）在铌酸锂波导层（2）上方，铌酸锂波导层（2）与氮化硅层（3）中间填充上包层。沿着光传播方向依次在氮化硅层（3）刻蚀均匀分光多模干涉耦合器（4，9）和上下层间耦合结构（5，8）的上半部分；在铌酸锂波导层（2）刻蚀上下层间耦合结构（5，8）的下半部分和偏振无关调制波导（6）；在铌酸锂波导层（2）的偏振无关调制波导（6）两侧制作金属电极（7），根据铌酸锂波导层（2）的调制特征调整金属电极（7）的位置。光开关利用氮化硅材料，实现了基本无源器件的偏振无关，同时利用铌酸锂材料的电光特性，实现了低损耗高速的调制特性。

Description

偏振无关的光开关
相关申请的交叉引用
本申请基于申请号为202010575864.1、申请日为2020年06月22日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本申请作为参考。
技术领域
本发明涉及半导体技术领域，特别涉及一种偏振无关的光开关。
背景技术
信息时代，云和数据密集型计算的出现，导致数据通信量不断增加，带宽要求持续增长。因此，需要一种能够满足带宽要求的器件，从而实现信息的可靠传输。
发明内容
本发明旨在至少在一定程度上解决相关技术中的技术问题之一。
为此，本发明的目的在于提出一种偏振无关的光开关，该光开关解决了硅波导或者其他材料难实现的偏振无关特性的技术问题，同时解决了电光调制时引入额外损耗大的技术问题。
为达到上述目的，本发明实施例提出了一种偏振无关的光开关，光开关为左右对称结构，包括：
下包层、铌酸锂波导层、上包层和氮化硅波导层，所述铌酸锂波导层集成在所述下包层上方，所述氮化硅波导层在所述铌酸锂波导层上方，所述铌酸锂波导层与所述氮化硅波导层中间填充所述上包层；
沿着光传播方向依次在所述氮化硅波导层刻蚀均匀分光多模干涉耦合器和上下层间耦合结构的上半部分，所述上半部分与所述均匀分光多模干涉耦合器的输出连接；
在所述铌酸锂波导层刻蚀所述上下层间耦合结构的下半部分和偏振无关调制波导，所述下半部分与所述偏振无关调制波导连接；以及
在所述铌酸锂波导层的所述偏振无关调制波导两侧制作金属电极，根据所述铌酸锂波导层的调制特征调整所述金属电极的位置。
本发明实施例的偏振无关的光开关提供了一种氮化硅材料与铌酸锂材料异质集成的新型光开关，利用绝缘体上的铌酸锂晶圆，刻蚀形成光开关调制臂的调制波导，于铌酸锂上生长一层氮化硅薄膜，刻蚀形成多模干涉耦合器等基本无源器件。该光开关结构利用氮化硅材 料，实现了基本无源器件的偏振无关，同时利用铌酸锂材料的电光特性，实现了低损耗高速的调制特性。
另外，根据本发明上述实施例的偏振无关的光开关还可以具有以下附加的技术特征：
进一步地，在本发明的一个实施例中，所述金属电极上方开孔，暴露于空气。
进一步地，在本发明的一个实施例中，光从所述均匀分光多模干涉耦合器的一个端口输入，经过所述上下层间耦合结构耦合至所述偏振无关调制波导，在所述金属电极上施加外加电压改变光相位，以使光路改变，再经过所述上下层间耦合结构，从所述均匀分光多模干涉耦合器的一个端口输出。
进一步地，在本发明的一个实施例中，所述上包层和所述下包层为二氧化硅材料。
进一步地，在本发明的一个实施例中，所述氮化硅波导层为宽度逐渐变窄的结构。
进一步地，在本发明的一个实施例中，改变所述氮化硅波导层的逐渐变窄结构的长度和所述铌酸锂波导层与所述氮化硅波导层的层间间距，以使横电模和横磁模低损耗耦合。
进一步地，在本发明的一个实施例中，所述均匀分光多模干涉耦合器为偏振无关2×2均匀分光多模干涉耦合器，包括4个输入输出的弯曲波导和中间多模波导。
进一步地，在本发明的一个实施例中，在根据所述铌酸锂波导层的调制特征调整所述金属电极位置的过程中，改变波导中电场线的分布，以使横电模与横磁模两个模式的调制效率相同。
本发明附加的方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为根据本发明一个实施例的偏振无关的光开关的结构示意图；
图2为根据本发明一个实施例的氮化硅材料的单模条件仿真结果图；
图3为根据本发明一个实施例的光开关中氮化硅波导层的俯视图；
图4为根据本发明一个实施例的光开关中铌酸锂波导层的横截面示意图。
附图标记：下包层-1；铌酸锂波导层-2；氮化硅波导层-3；均匀分光多模干涉耦合器-4、9；上下层间耦合结构-5、8；偏振无关调制波导-6；金属电极-7。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
目前，在数据交换网络中，电气开关的发展渐渐遇到瓶颈，无法满足当前大带宽、低功耗、低延时等性能要求，而光通信技术具有大带宽、低延时、低功耗等优点，为目前通信网络提供了一种可行的技术方案。
光开关作为光通信网络中的一个关键器件，主要应用于大型数据交换中心与超级计算机，通常要求光开关具有大带宽、低损耗与偏振无关等特性。除此之外，在数据包交换类型中，要求光开关的切换速度需要达到纳秒级才不至于导致数据丢包，因此，同时实现大带宽、低损耗、高切换速度与偏振无关是目前光开关亟需解决的问题。
光开关按其工作原理可分为波长路由交换和路径交换两种。波长路由通过改变载波波长实现光路径的切换，虽然其通信带宽较窄，信道数据承载量有限，但是由于其原理简单，易于实现，通过增加信道即可提高数据通信容量，因此目前实际应用依然以波长路由为主。路径交换的阵列可分为空间型和波导型，空间型的以MEMS(微机电系统，Micro-Electro-Mechanical System)为主，由于其低成本，目前在商用上很受欢迎。波导型的可分为二氧化硅、硅、三五族材料等不同材料类型，相比较于前两者性能更为优越，但是目前尚处于研究阶段。
硅基光子学，是基于硅和硅基衬底材料，利用目前先进的互补金属氧化物(CMOS)工艺进行光器件开发和集成的新兴学科，受到了广泛的研究。因此当下波导型光开关以硅材料为主，少数采用铌酸锂、新型相变材料等新材料。前者利用硅基等离子色散效应，通过脊波导的形式，工艺离子注入形成PIN结构，实现纳秒级的切换速度。后者利用材料的电光效应，同样也能实现纳秒甚至更快的切换速度。
但是，无论是基于传统的硅基等离子色散效应PIN结构的硅基光开关还是利用新材料的光开关，均很难同时实现偏振无关与低损耗高切换速度的性能。而在实际应用中，光开关作为通信网络中数据的交换节点，通常要求其具有大带宽、偏振无关、低损耗、高切换速度等特性。
综上，现有的光开关具有以下缺点：
(1)利用硅基等离子色散效应实现的硅基高速光开关，载流子注入引入了额外的光吸收损耗，实际使用时，损耗偏大。
(2)利用硅基等离子色散效应实现的硅基高速光开关，由于薄膜硅材料偏振无关波导 条件苛刻，工艺难以实现。
(3)利用铌酸锂与相变材料等新材料实现的高速光开关，其铌酸锂的刻蚀工艺难度大，而相变材料损耗较大。
因此，需要提供一种低损耗、高速、偏振无关的光开关结构。
目前常见的高速光开关，通常采用硅基等离子色散效应实现。在硅波导中引入离子掺杂，通过施加电信号，改变波导模式的有效折射率达到移相的目的。载流子的注入，在引起额外相移的同时，也带来额外的损耗，同时薄膜硅材料偏振无关条件苛刻，利用硅基等离子色散效应实现的高速光开关难以实现偏振无关是目前硅基高速光开关存在的技术问题。
除硅基等离子色散效应外，常见有利用相变材料实现高速光开关，也存在高损耗、偏振相关与难异质集成的问题。
本发明的实施例提出一种偏振无关的光开关结构，其能够实现低损耗和高切换速度。通过氮化硅材料与铌酸锂材料的异质集成，解决了硅波导或者其他材料难实现的偏振无关特性的技术问题，同时解决了电光调制时引入额外损耗大的技术问题。
下面参照附图描述根据本发明实施例提出的偏振无关或偏振不敏感的光开关。
图1为根据本发明一个实施例的偏振无关的光开关的结构示意图。
如图1所示，该偏振无关的光开关为左右对称结构。结合图1所示，偏振无关的光开关包括下包层1、铌酸锂波导层2、上包层(图中未示出)、氮化硅波导层3。
下包层1是最底层，铌酸锂波导层2被布置在下包层1的上方，氮化硅波导层3被布置在铌酸锂波导层2的上方，上包层被布置在铌酸锂波导层2和氮化硅波导层3之间。
在本发明的一个实施例中，上包层和下包层均为二氧化硅材料制成。在本发明中，术语“氮化硅层”和“氮化硅波导层”可以互换地使用。
沿着光传播方向(例如图1中从左向右的方向)依次布置有第一均匀分光多模干涉耦合器4(MMI，Multimode Interference)、第一上下层间耦合结构5、偏振无关调制波导6、金属电极7、第二上下层间耦合结构8和第二均匀分光多模干涉耦合器9。例如，通过刻蚀工艺形成上述第一均匀分光多模干涉耦合器4、第一上下层间耦合结构5、偏振无关调制波导6、金属电极7、第二上下层间耦合结构8和第二均匀分光多模干涉耦合器9。
具体地，第一均匀分光多模干涉耦合器MMI可以被布置在在氮化硅波导层3中。在一些示例中，第一均匀分光多模干涉耦合器MMI可以为偏振无关的2×2均匀分光多模干涉耦合器(例如，其包括4个输入输出端)。偏振无关的2×2均匀分光多模干涉耦合器可以耦接至弯曲波导，使得光从弯曲波导进入到多模波导后分解为多个不同的模式， 不同模式之间受相位关系的影响而进行干涉，经干涉后的光从多模波导的两个输出端输出。例如，可以通过刻蚀，将第一均匀分光多模干涉耦合器MMI布置在氮化硅波导层3中。
第一上下层间耦合结构5的上半部分可以被布置在在氮化硅波导层3中，下半部分可以被布置在铌酸锂波导层2中。其中，上半部分与第一均匀分光多模干涉耦合器4(2×2MMI)的输出连接，下半部分与偏振无关调制波导6连接。由此，实现光在不同层间的耦合。例如，可以通过刻蚀工艺，将上半部分形成在氮化硅波导层3中，并将下半部分形成在铌酸锂波导层2中。
偏振无关调制波导6和金属电极7被布置在铌酸锂波导层2中。偏振无关调制波导6的两侧布置有金属电极7。其中，金属电极7放置于偏振无关调制波导6的两侧，并与偏振无关调制波导6两侧的铌酸锂波导层2直接接触。在铌酸锂波导2上生长二氧化硅包层，使得二氧化硅包层覆盖偏振无关调制波导2与金属电极7。因此，偏振无关调制波导6与金属电极7不与空气直接接触。此时，需要去除金属电极7上方的二氧化硅包层，使金属电极7暴露于空气，通过在金属电极7上外加电压改变在偏振无关调制波导6中传播的光的相位。
进一步地，金属电极7相对于偏振无关调制波导6在水平方向(即图1中所示的yz平面)上的相对位置可以根据铌酸锂波导层2的调制特征进行调整。由此，改变偏振无关调制波导6中电场线的分布，使横电模与横磁模两个模式的调制效率相同，实现偏振无关。
上述偏振无关的光开关为左右对称的结构，因此，第二均匀分光多模干涉耦合器9和第二上下层间耦合结构8的结构和布置分别与第一均匀分光多模干涉耦合器4和第一上下层间耦合结构5的结构和布置相同。
可以理解的是，在本发明的实施例中，通过氮化硅材料设计制作了偏振无关无源器件，减小了器件工艺难度。利用铌酸锂材料各向异性的特性及其电光特性，实现了低损耗高切换速度的功能。基于包括偏振无关的氮化硅材料制作的无源器件和具有偏振无关调制效率的铌酸锂材料制作的调制臂，实现了偏振无关。由此，本发明的实施例的开关结构可进行多种变化，如可以形成微环谐振器、MZI(马赫-曾德尔干涉仪)。
在本发明的一个实施例中，光从第一均匀分光多模干涉耦合器4的其中一个输入端口输入，经第一上下层间耦合结构5耦合至偏振无关调制波导6，通过在金属电极7上施加电压，改变光相位，以使光路改变，最终光从第二个均匀分光多模干涉耦合器9的其中一个端口输出。
图2为氮化硅波导层的单模条件仿真结果的示意图，其中氮化硅波导层的高度为900nm。如图2所述，包括氮化硅波导层的四组模式仿真结果，其中TE表示横电模(电场只沿横向偏振)，TM表示横磁模(磁场只沿横向偏振)。通过改变氮化硅波导层的宽度，得到氮化硅波导四组模式的有效折射率变化，在TE模与TM模有效折射率曲线的相交叉点处实现偏振无关。其中，在图2中，横坐标表示氮化硅波导层的宽度，纵坐标表示氮化硅波导层的有效折射率。从仿真结果可以看出，在氮化硅波导层的高度为900nm的条件下，氮化硅波导层的宽度为700nm左右时可实现偏振无关。该氮化硅波导层的尺寸结构较大，容易通过工艺制作实现，减小了工艺刻蚀难度。基于该结果，本发明通过设计可以实现偏振无关的MMI基本无源器件。
图3示出了根据本申请实施例的偏振无关的光开关的俯视图。如图3所示，Si3N4taper表示氮化硅波导层3，LN Waveguide表示铌酸锂波导层2。其中，氮化硅波导层3布置在铌酸锂波导层2的上方。本发明实施例中设计的铌酸锂波导层2上方的氮化硅波导层为宽度渐变的结构，例如宽度逐渐变窄(taper)。光在氮化硅波导中传播时逐渐发散并与铌酸锂波导发生耦合，光逐渐从氮化硅波导耦合至铌酸锂波导，根据光路可逆，反向传播特性相同。本发明的实施例通过设计合理的氮化硅波导层taper长度以及铌酸锂波导层与氮化硅波导层的层间间距，可实现横电模(TE)与横磁模(TM)的低损耗耦合。由于改变铌酸锂波导层形状的工艺难度大，本发明的实施例中仅对氮化硅波导层做较大的宽度变化而尽量减小铌酸锂波导宽度的变化。
如图4所示，根据铌酸锂材料各向异性的特性，其折射率可写为张量形式：
Figure PCTCN2020128192-appb-000001
其中，n o为铌酸锂材料x与y方向折射率，n e为铌酸锂材料z方向折射率。以在z方向加电场为例，当电场线方向与光偏振方向相同时，调制效率最大，随着电场线方向与光偏振方向之间发生偏离，调制效率逐渐变化，当电场线垂直于偏振方向时，调制效率最低，大约为最大调制效率的八分之一。根据铌酸锂材料的调制特性，本发明的实施例通过将金属电极布置在合适的位置来改变波导中电场线的分布，使TE与TM两个模式的调制效率相同，实现偏振无关。
由于铌酸锂材料的调制特性，电场直接作用于铌酸锂材料上，在铌酸锂材料折射率变化时，不会引入额外的光吸收损耗，并且拥有极快的响应速度。例如，铌酸锂材料带宽至少为70GHz以上，其指标水平远高于目前数据包通信方式中的纳秒级切换速度。
根据本发明实施例提出的偏振无关的光开关提供了一种氮化硅材料与铌酸锂材料异质集成的新型光开关，利用绝缘体上的铌酸锂晶圆，刻蚀形成光开关调制臂的调制波导，于铌酸锂上生长一层氮化硅薄膜，刻蚀形成多模干涉耦合器等基本无源器件。该光开关结构包括偏振无关的氮化硅材料制成的无源器件，和具有偏振无关调制效率的铌酸锂材料制作的调制臂，从而利用氮化硅材料和铌酸锂材料实现基本无源器件的偏振无关，同时利用铌酸锂材料的电光特性，实现了低损耗高速的调制特性。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (18)

  1. 一种偏振无关的光开关，其特征在于，包括：
    下包层；
    铌酸锂波导层，布置在所述下包层的上方；
    氮化硅波导层，布置在所述铌酸锂波导层的上方；
    上包层，布置在所述铌酸锂波导层和所述氮化硅波导层之间；
    第一均匀分光多模干涉耦合器和第二均匀分光多模干涉耦合器，布置在所述氮化硅波导层中；
    偏振无关调制波导，布置在所述铌酸锂波导层中；
    多个金属电极，布置在所述铌酸锂波导层中，并分别布置在所述偏振无关调制波导的两侧；
    第一上下层间耦合结构，一端与所述第一均匀分光多模干涉耦合器连接，另一端与所述偏振无关调制波导连接；
    第二上下层间耦合结构，一端与所述偏振无关调制波导连接，另一端与所述第二均匀分光多模干涉耦合器连接；
    其中，所述多个金属电极的位置由所述铌酸锂波导层的调制特性来确定。
  2. 根据权利要求1所述的偏振无关的光开关，其特征在于，
    所述第一均匀分光多模干涉耦合器、所述第一上下层间耦合结构、所述偏振无关调制波导、所述第二上下层间耦合结构和所述第二均匀分光多模干涉耦合器按照光传播方向顺序布置。
  3. 根据权利要求1或2所述的偏振无关的光开关，其特征在于，
    所述第一均匀分光多模干涉耦合器和所述第二均匀分光多模干涉耦合器相同，且所述第一上下层间耦合结构与所述第二上下层间耦合结构相同。
  4. 根据权利要求3所述的偏振无关的光开关，其特征在于，
    所述第一均匀分光多模干涉耦合器和所述第二均匀分光多模干涉耦合器是2×2均匀分光多模干涉耦合器，各自包括两个输入接口和两个输出接口。
  5. 根据权利要求1至3中任一项所述的偏振无关的光开关，其特征在于，
    所述第一上下层间耦合结构包括布置在所述氮化硅波导层中的与所述第一均匀分光多模干涉耦合器耦接的上半部分，以及布置在所述铌酸锂波导层中的与所述偏振无关调制波导耦接的下半部分；
    所述第二上下层间耦合结构包括布置在所述铌酸锂波导层中的与所述偏振无关调制波 导耦接的下半部分，以及布置在所述氮化硅波导层中的与所述第二均匀分光多模干涉耦合器耦接的上半部分。
  6. 根据权利要求1至5中任一项所述的偏振无关的光开关，其特征在于，
    所述多个金属电极的上表面暴露于空气中。
  7. 根据权利要求6所述的偏振无关的光开关，其特征在于，
    所述偏振无关调制波导中传播的光的相位根据施加于所述多个金属电极的电压而改变，实现开关作用。
  8. 根据权利要求1至7中任一项所述的偏振无关的光开关，其特征在于，
    所述上包层和所述下包层为二氧化硅材料。
  9. 根据权利要求1至8中任一项所述的偏振无关的光开关，其特征在于，
    所述氮化硅波导层为沿光传播方向宽度逐渐变窄的结构。
  10. 根据权利要求9所述的偏振无关的光开关，其特征在于，
    所述氮化硅波导层的宽度逐渐变窄结构的长度和所述铌酸锂波导层与所述氮化硅波导层之间的层间间距被成，以使横电模和横磁模低损耗耦合。
  11. 根据权利要求1至10中任一项所述的偏振无关的光开关，其特征在于，
    所述偏振无关的光开关形成微环谐振器或马赫-增德尔干涉仪。
  12. 一种制作偏振无关的光开关的方法，其特征在于，包括：
    使用二氧化硅材料形成下包层；
    在下包层的上方沉积铌酸锂材料，形成铌酸锂波导层；
    在所述铌酸锂波导层上方沉积二氧化硅材料，形成上包层；
    在上包层上方沉积氮化硅材料，形成氮化硅波导层；
    在所述铌酸锂波导层中，通过刻蚀形成偏振无关调制波导、金属电极、第一上下层间耦合结构的下半部分、第二上下层间耦合结构的下半部分，其中所述金属电极布置在所述偏振无关调制波导的两侧；
    在所述氮化硅波导层中，通过刻蚀形成第一均匀分光多模干涉耦合器、所述第一上下层间耦合结构的上半部分、第二均匀分光多模干涉耦合器、所述第二上下层间耦合结构的上半部分，
    其中，所述第一均匀分光多模干涉耦合器耦接至所述第一上下层间耦合结构的上半部分、所述第一上下层间耦合结构的下半部分耦接至所述偏振无关调制波导的一端、所述偏振无关调制波导的另一端耦接至所述第二上下层间耦合结构的下半部分，所述第二上下层间耦合结构的上半部分耦接至所述第二均匀分光多模干涉耦合器，
    其中，根据所述铌酸锂波导层的调制特性来改变所述金属电极的位置，来实现偏振无关。
  13. 根据权利要求12所述的方法，其特征在于，
    将所述氮化硅波导层形成为宽度渐变的形状。
  14. 根据权利要求12或13所述的方法，其特征在于，
    其中，形成相同结构的所述第一均匀分光多模干涉耦合器和所述第二均匀分光多模干涉耦合器，并形成相同结构的所述第一上下层间耦合结构与所述第二上下层间耦合。
  15. 根据权利要求14所述的方法，其特征在于，
    其中，将所述第一均匀分光多模干涉耦合器和所述第二均匀分光多模干涉耦合器各自形成为2×2均匀分光多模干涉耦合器，各自包括两个输入接口和两个输出接口。
  16. 根据权利要求12至15中任一项所述的方法，其特征在于，
    在形成金属电极时，使金属电极的上表面暴露在空气中。
  17. 根据权利要求12至16中任一项所述的方法，其特征在于，
    控制氮化硅波导层宽度渐变的长度和所述铌酸锂波导层与所述氮化硅波导层之间的层间间距被设置成使得横电模和横磁模低损耗耦合。
  18. 根据权利要求12至17中任一项所述的方法，其特征在于，
    使用所述偏振无关的光开关形成微环谐振器或马赫-增德尔干涉仪。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115097567A (zh) * 2022-07-07 2022-09-23 安徽大学 一种基于相变材料的紧凑型双模等离子体波导调制器
CN115327701A (zh) * 2022-07-27 2022-11-11 浙江大学 一种基于x切薄膜铌酸锂平台的偏振不敏感光学滤波器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6603893B1 (en) * 2001-03-27 2003-08-05 Intel Corporation Method and apparatus for switching an optical beam in a semiconductor substrate
CN2828856Y (zh) * 2005-11-14 2006-10-18 浙江大学 一种基于电光聚合物材料的偏振无关光开关
US20180196331A1 (en) * 2017-01-12 2018-07-12 Government of the United States, as represented the Secretary of the Air Force Integrated Quantum Information Processing Controlled Phase Gate
CN110187526A (zh) * 2019-05-17 2019-08-30 上海交通大学 硅基铌酸锂薄膜电光调制器阵列
CN111175999A (zh) * 2020-02-24 2020-05-19 上海交通大学 基于铌酸锂-硅晶圆的高速低电压电光调制器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190250435A1 (en) * 2014-08-01 2019-08-15 Mohammad A. Mazed Fast optical switch and its applications in optical communication
CN114415400A (zh) * 2022-01-28 2022-04-29 中山大学 一种基于薄膜铌酸锂的偏振无关电光调制器及其制备方法
CN114488409B (zh) * 2022-02-07 2024-05-10 东南大学 基于可调耦合器级联耦合共振光波导的可重构光学滤波器芯片

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6603893B1 (en) * 2001-03-27 2003-08-05 Intel Corporation Method and apparatus for switching an optical beam in a semiconductor substrate
CN2828856Y (zh) * 2005-11-14 2006-10-18 浙江大学 一种基于电光聚合物材料的偏振无关光开关
US20180196331A1 (en) * 2017-01-12 2018-07-12 Government of the United States, as represented the Secretary of the Air Force Integrated Quantum Information Processing Controlled Phase Gate
CN110187526A (zh) * 2019-05-17 2019-08-30 上海交通大学 硅基铌酸锂薄膜电光调制器阵列
CN111175999A (zh) * 2020-02-24 2020-05-19 上海交通大学 基于铌酸锂-硅晶圆的高速低电压电光调制器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHILEI JIN: "LiNb03 Thin-Film Modulators Using Silicon Nitride Surface Ridge Waveguides", PHOTONICS TECHNOLOGY LETTERS, vol. 28, no. 7, 1 April 2016 (2016-04-01), XP011600481, DOI: 10.1109/LPT.2015.2507136 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115097567A (zh) * 2022-07-07 2022-09-23 安徽大学 一种基于相变材料的紧凑型双模等离子体波导调制器
CN115097567B (zh) * 2022-07-07 2023-07-04 安徽大学 一种基于相变材料的紧凑型双模等离子体波导调制器
CN115327701A (zh) * 2022-07-27 2022-11-11 浙江大学 一种基于x切薄膜铌酸锂平台的偏振不敏感光学滤波器
CN115327701B (zh) * 2022-07-27 2023-12-08 浙江大学 一种基于x切薄膜铌酸锂平台的偏振不敏感光学滤波器

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